TWI599271B - A device for coating nano-particles on a substrate and a method for manufacturing the same - Google Patents

A device for coating nano-particles on a substrate and a method for manufacturing the same Download PDF

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TWI599271B
TWI599271B TW104139804A TW104139804A TWI599271B TW I599271 B TWI599271 B TW I599271B TW 104139804 A TW104139804 A TW 104139804A TW 104139804 A TW104139804 A TW 104139804A TW I599271 B TWI599271 B TW I599271B
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substrate
plasma
plasma processing
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producing
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TW201720239A (en
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Shi-Chen Shi
Wen-Ke Huang
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一種塗佈奈米微粒於基材的設備及其製造方法 Device for coating nano particles on substrate and manufacturing method thereof

本發明係有關於一種塗佈奈米微粒於基材的設備及其製造方法,其尤指一種電漿加工裝置對其設置於內部之至少一供料棒進行冷電漿加工,並於常溫常壓環境下將加工之混合物塗佈於一基材上,以對基材進行改質、鍍膜、消毒滅菌或毒性檢測之設備及其製造方法。 The invention relates to a device for coating nano particles on a substrate and a manufacturing method thereof, in particular to a plasma processing device for cold plasma processing of at least one supply rod disposed inside thereof, and at normal temperature A device for applying a modified mixture to a substrate under pressure to modify, coat, sterilize or toxic the substrate and a method for its manufacture.

按,真空輝光電漿於早期即開始運用於半導體製程以及各式材料之處理,由於在真空環境中進行處理之技術需搭配昂貴的真空設備,因此受到諸多條件限制,且運用之產業領域有限而不具有競爭力。於此才有現今毋須於真空環境下進行作業之大氣輝光電漿,因透過該領域之專家研發而問世;其中大氣輝光電漿之應用範圍甚為廣泛,例如紙質、棉質、紡織品、金屬、玻璃、橡膠、塑膠或生醫科技等高分子材料之表面改質;氣體、液體或醫療器具之消毒滅菌;以及各類材料之鍍膜、清潔等皆可見其衍生運用。 According to the vacuum photovoltaic paste, it has been used in the semiconductor process and processing of various materials in the early stage. Because the technology of processing in a vacuum environment needs to be equipped with expensive vacuum equipment, it is subject to many conditions and the industrial field of application is limited. Not competitive. At this point, there is an atmospheric photovoltaic slurry that is not required to be operated in a vacuum environment. It has been developed through the research and development of experts in the field. Among them, atmospheric photovoltaic paste is widely used, such as paper, cotton, textiles, metal, Surface modification of polymer materials such as glass, rubber, plastic or biomedical technology; disinfection and sterilization of gases, liquids or medical devices; and coating and cleaning of various materials can be seen.

大氣輝光電漿係藉由一電源供電於兩電極間以驅動一電場,使電場間之氣體因電離而崩潰解離產生活性氣體物質(即電漿)。另外依照電漿形式亦有區分多種電漿源設計,例如電暈放電(Corona discharge)、介電質放電(Dielectric barrier discharge)、噴射電漿(Plasma jet)等。 The atmospheric glow plasma is powered by a power source between the two electrodes to drive an electric field, so that the gas between the electric fields collapses and dissociates due to ionization to generate active gas species (ie, plasma). In addition, according to the plasma form, a plurality of plasma source designs are also distinguished, such as Corona discharge, Dielectric barrier discharge, and Plasma jet.

參閱第六圖,其為電暈放電示意圖。如圖所示,電源供應器7對陽極702以及陰極金屬線704通電,使得兩電極間的氣體被電離,並於尖端附近產生放電現象,即為所謂的電暈放電706。其中雖然電暈放電706能滿足低溫需求,然而因其須於高電壓高週波環境下進行、電漿密度較低以及電漿空間均勻性不佳(如圖中飄移區域708所示)等缺點,故僅能適合較低品質之材料處理需求。 See the sixth figure, which is a schematic diagram of corona discharge. As shown, the power supply 7 energizes the anode 702 and the cathode metal line 704 such that the gas between the electrodes is ionized and produces a discharge phenomenon near the tip, a so-called corona discharge 706. Although the corona discharge 706 can meet the low temperature requirement, it has to be carried out in a high voltage and high frequency environment, the plasma density is low, and the plasma space uniformity is poor (as shown in the drift region 708 in the figure). Therefore, it can only be used for lower quality material processing needs.

另外,專利第I432228號係揭示一種微電漿產生裝置及其滅菌系統,其專利說明書於第6頁之先前技術第二段述及:「為了改善滅菌時對於處理物可能造成之傷害,以及降低真空低溫電漿機台購置成本,近來發展利用非熱性、常壓之介電阻障(dielectric barrier discharge,DBD)電漿進行滅菌,此種DBD電漿係在兩平面電極間產生電漿,其中一電極上覆以介電材質屏障,以避免產生非預期微電弧,DBD電漿可減少或避免高能量部分造成的影響,只要施加低能量即可獲得高反應性的物質達到滅菌效果。然而,上述DBD電漿仍有使用上的限制,此係因醫療器具大多數具有不規則的外型,但DBD電漿卻難以覆蓋上述醫療器具所有暴露的表面,或者難以作用至前述醫療器材上某些縫隙中所藏匿的細菌,因此,滅菌的成效受制於待處理物的幾何形狀。另一方面,藏匿而殘餘的細菌,通常處於潮濕環境,如:水溶液中,因此必須施用可確保水溶液中亦可達到完全滅菌效果之滅菌技術,但若採用DBD電漿在水溶液中進行滅菌,困難性則會大幅提升。」,乃已揭露介電質放電於相關製程作業中產生之缺失,於此不再贅述。 In addition, Patent No. I432228 discloses a micro-plasma generating device and a sterilizing system thereof, the patent specification of which is described in the second paragraph of the prior art on page 6: "To improve the damage to the treated object during sterilization, and to reduce Vacuum low-temperature plasma machine purchase cost, recently developed by using non-thermal, atmospheric pressure dielectric barrier discharge (DBD) plasma for sterilization, this DBD plasma system produces plasma between the two plane electrodes, one of which The electrode is covered with a dielectric barrier to avoid unintended micro-arcing. DBD plasma can reduce or avoid the effects of high-energy parts, as long as low energy is applied to obtain highly reactive substances to achieve sterilization. DBD plasma still has limitations in use. This is because most medical devices have irregular shapes, but DBD plasma is difficult to cover all exposed surfaces of the above medical devices, or it is difficult to apply to some gaps in the aforementioned medical devices. The bacteria hidden in the body, therefore, the effectiveness of sterilization is subject to the geometry of the object to be treated. On the other hand, the bacteria that remain and remain, Often in a humid environment, such as an aqueous solution, it is necessary to apply a sterilization technique that ensures complete sterilization in an aqueous solution. However, if DBD plasma is used for sterilization in an aqueous solution, the difficulty will be greatly improved." The absence of dielectric discharge in related process operations is disclosed and will not be described here.

又,參閱第七圖,其為該微電漿產生裝置示意圖(同I432228號圖 1)。如圖所示,專利第I432228號所揭示之微電漿產生裝置及其滅菌系統,該微電漿產生裝置係於常溫下運作,並採用毛細管式中空內電極。且無須使用高瓦數產生電漿,微電漿產生裝置尺寸可縮小至筆型,並將反應氣體與電漿激發氣體分流供應。其中經由內電極傳輸之反應氣體如:氧氣,促使電漿激發物質組成發生變化,使電漿中含氧激發物質多樣性比例提高。並透過適當調整之反應氣體濃度、工作距離及處理時間,可使微電漿滅菌參數最佳化,以針對不同菌種,例如:大腸桿菌、金黃色葡萄球菌、嗜熱桿菌等進行滅菌,即使該些細菌藏匿於液體環境中,仍可以達到完全滅菌的效果。 Also, refer to the seventh figure, which is a schematic diagram of the micro-plasma generating device (the same as I432228) 1). As shown in the figure, the microplasma generating apparatus disclosed in Japanese Patent No. I432228 and a sterilization system thereof are operated at a normal temperature and employ a capillary hollow internal electrode. Moreover, it is not necessary to use high wattage to generate plasma, the micro-plasma generating device can be downsized to a pen type, and the reaction gas and the plasma excitation gas are shunted. The reaction gas transmitted through the internal electrode, such as oxygen, causes the composition of the plasma-excited substance to change, and the proportion of the oxygen-exciting substance in the plasma is increased. Through appropriate adjustment of the reaction gas concentration, working distance and treatment time, the micro-plasma sterilization parameters can be optimized to sterilize different strains such as Escherichia coli, Staphylococcus aureus, Thermophila, etc., even These bacteria are hidden in a liquid environment and can still achieve complete sterilization.

上述專利第I432228號之微電漿產生裝置及其滅菌系統,其所產生之電漿係為微量設置,且只針對菌種進行滅菌動作,並未揭示可對其他物質進行改質、鍍膜或清潔。又,電漿之生成態樣係取決於氣體種類更換,若對其他態樣性質之基材進行電漿塗佈作業,一來因電漿含量微少,係無法對大量或大面積之基材進行塗佈作業,不適合此類產業之大量生產;二來為了適配基材之態樣性質,若只針對氣體種類更換以變更電漿性質,在與基材的搭配上係有其限制與困難性。於此,遂有針對上述電漿產生裝置進行改良之必要性。 The micro-plasma generating device and the sterilizing system thereof of the above-mentioned Patent No. I432228, the plasma generated by the micro-plasma generating device is arranged in a small amount, and only sterilizes the bacteria, and does not disclose that the other substances can be modified, coated or cleaned. . Moreover, the formation state of the plasma depends on the gas type replacement. If the plasma coating work is performed on the substrate of other natures, the plasma content is small, and it is impossible to carry out a large or large area of the substrate. Coating operation is not suitable for mass production in such industries. Secondly, in order to adapt to the nature of the substrate, if it is only changed for gas type to change the plasma properties, it has limitations and difficulties in matching with the substrate. . Here, there is a need for improvement of the above plasma generating apparatus.

本發明之主要目的係提供一種塗佈奈米微粒於基材的設備及其製造方法,其係對電漿加工裝置通電以及導入一氣體進行冷電漿加工作業。並與電漿加工裝置內部設置之至少一供料棒進行反應而釋放複數奈米微粒,以將加工產生具電漿以及奈米微粒之一混合 物塗佈於基材上;藉此對基材進行改質、鍍膜、消毒滅菌或毒性量測。 SUMMARY OF THE INVENTION A primary object of the present invention is to provide an apparatus for coating nanoparticles on a substrate and a method of manufacturing the same, which is to energize a plasma processing apparatus and introduce a gas to perform a cold plasma processing operation. And reacting with at least one feed rod disposed inside the plasma processing device to release a plurality of nano particles to process the plasma and one of the nano particles The substrate is coated on the substrate; thereby modifying, coating, disinfecting or toxicizing the substrate.

本發明之次一目的係提供一種塗佈奈米微粒於基材的設備及其製造方法,其將電漿加工裝置對其內部之至少一供料棒進行冷電漿加工作業,並將加工完成之一混合物塗佈於基材上進行改質、鍍膜、消毒滅菌或毒性量測之製程。係可於一般常溫常壓環境下即可進行作業,毋須受限於真空環境以及適配真空環境所需之相關設施。 A second object of the present invention is to provide an apparatus for coating nano particles on a substrate, and a method of manufacturing the same, which comprises performing a cold plasma processing operation on at least one of the supply rods of the plasma processing apparatus, and completing the processing One of the mixtures is applied to a substrate for modification, coating, sterilization or toxicity measurement. It can be operated under normal ambient temperature and normal pressure environment, without being limited by vacuum environment and related facilities needed to adapt to vacuum environment.

本發明之再一目的係提供一種塗佈奈米微粒於基材的設備及其製造方法,其中電漿加工裝置係可採陣列設置於基材上,基材係可設置於一加工平台上,加工平台可為一呈靜止或輸送狀態之一輸送帶;藉此設置達到自動化且高速化進行基材改質、鍍膜、消毒滅菌或毒性量測之大量生產化製程作業。 A further object of the present invention is to provide an apparatus for coating nano particles on a substrate, and a method of manufacturing the same, wherein the plasma processing apparatus can be disposed on a substrate, and the substrate can be disposed on a processing platform. The processing platform can be a conveyor belt in a stationary or transport state; thereby setting up a mass production process that achieves automation and high speed for substrate modification, coating, sterilization or toxicity measurement.

為了達到上述目的、功效所採用之技術手段,本發明係提供一種塗佈奈米微粒於基材的設備及其製造方法,其係提供一電漿加工裝置,並於電漿加工裝置之內部設置至少一供料棒。對電漿加工裝置通電以及導入一氣體以進行冷電漿加工作業,使得產生之電漿衝擊供料棒,進而進行反應並釋放複數奈米微粒。將電漿以及該些奈米微粒之混合物於電漿加工裝置之一出料口噴出,並塗佈於一基材上,以對基材進行改質、鍍膜、消毒滅菌或毒性檢測等製程作業。其中將混合物塗佈於基材之作業環境,係可於一般常溫常壓下進行,毋須限受限於真空環境中以及設置適配真空環境之相關設施。 The present invention provides a device for coating nano particles on a substrate and a method for manufacturing the same, which provide a plasma processing device and are disposed inside the plasma processing device. At least one feed rod. The plasma processing apparatus is energized and a gas is introduced for cold plasma processing so that the generated plasma strikes the supply rod, thereby reacting and releasing a plurality of nanoparticles. The slurry and the mixture of the nano particles are sprayed out at a discharge port of the plasma processing device and coated on a substrate to modify, polish, sterilize or test the substrate. . The working environment in which the mixture is applied to the substrate can be carried out under normal atmospheric temperature and normal pressure, and is not limited to the vacuum environment and the relevant facilities for adapting the vacuum environment.

1‧‧‧電漿加工裝置 1‧‧‧ Plasma processing equipment

102‧‧‧入氣口 102‧‧‧ inlet

104‧‧‧出料口 104‧‧‧Outlet

106‧‧‧電漿 106‧‧‧ Plasma

108‧‧‧奈米微粒 108‧‧‧Nano particles

20‧‧‧電極 20‧‧‧ electrodes

40‧‧‧供料棒 40‧‧‧ Feeding rod

60‧‧‧混合物 60‧‧‧ mixture

2‧‧‧電源供應裝置 2‧‧‧Power supply unit

202‧‧‧正極 202‧‧‧ positive

204‧‧‧負極 204‧‧‧negative

3‧‧‧氣體裝置 3‧‧‧ gas installation

4‧‧‧氣體流量控制器 4‧‧‧ gas flow controller

5‧‧‧基材 5‧‧‧Substrate

502‧‧‧容置槽 502‧‧‧ accommodating slots

504‧‧‧液體 504‧‧‧Liquid

6‧‧‧加工平台 6‧‧‧Processing platform

7‧‧‧電源供應器 7‧‧‧Power supply

702‧‧‧陽極 702‧‧‧Anode

704‧‧‧陰極金屬線 704‧‧‧Cathed metal wire

706‧‧‧電暈放電 706‧‧‧corona discharge

708‧‧‧飄移區域 708‧‧‧ drifting area

S1‧‧‧步驟 S1‧‧‧ steps

S2‧‧‧步驟 S2‧‧‧ steps

S3‧‧‧步驟 S3‧‧‧ steps

S4‧‧‧步驟 S4‧‧‧ steps

第一圖:其為本發明之第一實施例之塗佈奈米微粒於基材的製造方法之流程方塊圖;第二圖:其為本發明之第一實施例之塗佈奈米微粒於基材的設備示意圖;第三圖:其為本發明之第一實施例之塗佈奈米微粒於基材的設備作動圖;第四圖:其為本發明之第一實施例之塗佈奈米微粒於基材的設備之液體以及容置槽示意圖;第五圖:其為本發明之第二實施例之塗佈奈米微粒於基材的設備之陣列塗佈示意圖;第六圖:其為習知電暈放電示意圖;以及第七圖:其為習知微電漿產生裝置示意圖。 1 is a flow chart showing a method for producing a coated nanoparticle on a substrate according to a first embodiment of the present invention; and a second embodiment: the coated nanoparticle according to the first embodiment of the present invention A schematic diagram of a device for a substrate; a third diagram: an apparatus for coating a nanoparticle on a substrate according to a first embodiment of the present invention; and a fourth diagram: a coating of the first embodiment of the present invention Schematic diagram of the liquid and accommodating tank of the device of the granules on the substrate; FIG. 5 is a schematic view showing the array coating of the device for coating the nanoparticles on the substrate according to the second embodiment of the present invention; It is a schematic diagram of a conventional corona discharge; and a seventh diagram: it is a schematic diagram of a conventional microplasma generating device.

為使對本發明之特徵及所達成之功效有更進一步之瞭解與認識,謹佐以較佳之實施例及配合詳細之說明,說明如後:參閱第一圖,其為本發明之第一實施例之塗佈奈米微粒於基材的製造方法之流程方塊圖。如圖所示,本發明為一種塗佈奈米微粒於基材的製造方法,其係包含以下步驟:步驟S1:提供一電漿加工裝置,用以進行冷電漿加工;步驟S2:將至少一供料棒設於該電漿加工裝置內;步驟S3:該電漿加工裝置通電及導入一氣體,使該電漿加工裝置進行冷電漿加工並產生電漿,該供料棒被該電漿衝擊而釋放複數奈米微粒,該電漿與該些奈米微粒混合而由該電漿加工裝置之一 出料口噴出,該出料口處係為常溫常壓;以及步驟S4:提供一基材,該基材係設於該出料口外相對之位置,該基材處係為常溫常壓,該電漿以及該些奈米微粒係塗佈於該基材上。 For a better understanding and understanding of the features and advantages of the present invention, the preferred embodiments and the detailed description are described as follows: Referring to the first figure, which is a first embodiment of the present invention A block diagram of a method for producing a coated nanoparticle on a substrate. As shown in the figure, the present invention is a method for producing a coated nanoparticle on a substrate, comprising the steps of: step S1: providing a plasma processing device for performing cold plasma processing; and step S2: at least a feeding rod is disposed in the plasma processing device; step S3: the plasma processing device is energized and a gas is introduced, the plasma processing device is subjected to cold plasma processing and plasma is generated, and the feeding rod is electrically The slurry impacts and releases a plurality of nano particles, and the plasma is mixed with the nano particles to be one of the plasma processing devices The discharge port is sprayed, the discharge port is at normal temperature and pressure; and step S4: providing a substrate, the substrate is disposed at a position opposite to the discharge port, and the substrate is at normal temperature and pressure, The plasma and the nanoparticulates are applied to the substrate.

承接前述製造方法,並參閱第二圖以及第三圖,其為本發明之第一實施例之塗佈奈米微粒於基材的設備示意圖以及作動圖。如圖所示,當電漿加工裝置1欲進行冷電漿加工時,係藉由一電源供應裝置2對耦合於電漿加工裝置1之一正極202以及一負極204通電。以及從電漿加工裝置1設置之入氣口102,導入由一氣體裝置3供給之氣體進入電漿加工裝置1內。使得電漿加工裝置1內設置之一電極20與氣體作用進行冷電漿加工而產生電漿106。 The foregoing manufacturing method is referred to, and reference is made to the second drawing and the third drawing, which is a schematic view and an operation diagram of the apparatus for coating the nanoparticle on the substrate according to the first embodiment of the present invention. As shown, when the plasma processing apparatus 1 is to perform cold plasma processing, a positive electrode 202 and a negative electrode 204 coupled to the plasma processing apparatus 1 are energized by a power supply unit 2. The gas supplied from a gas device 3 is introduced into the plasma processing apparatus 1 from the gas inlet port 102 provided in the plasma processing apparatus 1. One of the electrodes 20 provided in the plasma processing apparatus 1 is subjected to cold plasma processing by a gas to generate a plasma 106.

其中,氣體裝置3之氣體供應可為一電漿激發氣體以及一反應氣體,該些氣體導入入氣口102之種類、流量以及時間可由一氣體流量控制器4進行調控。該氣體流量控制器4之一側連通氣體裝置3以接收供應之氣體,氣體流量控制器4之另一側連通入氣口102,以決定導入之氣體種類、流量以及時間等參數調節。 The gas supply of the gas device 3 can be a plasma excitation gas and a reaction gas. The type, flow rate and time of the gas introduction into the gas inlet port 102 can be regulated by a gas flow controller 4. One side of the gas flow controller 4 communicates with the gas device 3 to receive the supplied gas, and the other side of the gas flow controller 4 communicates with the inlet port 102 to determine parameter adjustments such as the type of gas introduced, flow rate, and time.

利用電漿加工裝置1作動產生之電漿106,對設置於電漿加工裝置1內之供料棒40衝擊而釋放複數奈米微粒108,該供料棒40係可以複數設置,可依該奈米微粒108量之需求而進行該供料棒40其彈性數量之設置。而後將電漿106與該些奈米微粒108於電漿加工裝置1之出料口104噴出,噴出之物質係為具有電漿106以及大量奈米微粒108之混合物60。 The plasma 106 generated by the plasma processing apparatus 1 is impacted by the supply rod 40 disposed in the plasma processing apparatus 1 to release a plurality of nano particles 108, which can be set in plural, and can be used in accordance with the The amount of the elastic amount of the supply rod 40 is set for the demand of the amount of the rice particles 108. The plasma 106 and the nanoparticles 108 are then ejected at the discharge port 104 of the plasma processing apparatus 1, and the ejected material is a mixture 60 having a plasma 106 and a plurality of nanoparticles 108.

其中,供料棒40為金屬材料棒、合金材料棒、碳材料棒、高分子 材料、陶瓷或塑膠;奈米微粒108為金屬、氧化物、氮化物、碳化物、高分子材料、陶瓷或塑膠之微粒;然而,其他可作為與電漿106反應並釋放奈米微粒108,而塗佈於基材5上之物質皆可為之,並不以此為限。於此,奈米微粒108係取決於供料棒40之材料態樣變換,或者是氣體供應種類更換,而使得冷電漿加工產生之電漿106與供料棒40進行反應時,決定奈米微粒108之態樣性質。 Wherein, the supply rod 40 is a metal material rod, an alloy material rod, a carbon material rod, a polymer Material, ceramic or plastic; nanoparticulates 108 are particles of metals, oxides, nitrides, carbides, polymeric materials, ceramics or plastics; however, others may react with the plasma 106 and release the nanoparticles 108, The materials coated on the substrate 5 can be used, and are not limited thereto. Here, the nanoparticles 108 are changed depending on the material state of the supply rod 40, or the gas supply type is changed, so that the plasma 106 generated by the cold plasma processing reacts with the supply rod 40 to determine the nanometer. The nature of the particles 108.

於電漿加工裝置1外側且相對出料口104之位置設有一加工平台6,加工平台6係為一輸送帶,其可呈靜置狀態或者是輸動狀態。基材5係設於加工平台6上並相對出料口104之位置。將電漿加工裝置1進行冷電漿加工產生之奈米微粒108(或混合物60)塗佈於基材5上,使基材5具有金屬、氧化物、氮化物、碳化物、高分子材料、陶瓷或塑膠之奈米微粒108,以對基材5進行改質、鍍膜、消毒滅菌或者是毒性檢測。其中,位於出料口104處以及基材5(加工平台6)處係為常溫常壓之環境,亦即本發明之電漿加工裝置1對基材5進行塗佈作業時,係可於一般環境下進行,毋須於真空環境中或者是其他受限於基材5、電漿加工裝置1或適配於真空環境之相關設施之作業條件限制。 A processing platform 6 is disposed outside the plasma processing apparatus 1 and opposite to the discharge opening 104. The processing platform 6 is a conveyor belt, which can be in a stationary state or a transmission state. The substrate 5 is disposed on the processing platform 6 at a position relative to the discharge opening 104. The nanoparticles 108 (or the mixture 60) produced by the plasma processing apparatus 1 by cold plasma processing are applied onto the substrate 5, and the substrate 5 has a metal, an oxide, a nitride, a carbide, a polymer material, The ceramic or plastic nanoparticle 108 is modified, coated, sterilized or tested for toxicity on the substrate 5. Wherein, the material is located at the discharge port 104 and the substrate 5 (processing platform 6) is an environment of normal temperature and pressure, that is, when the plasma processing apparatus 1 of the present invention applies the substrate 5, it can be used in general. The environment is carried out without limitation in the vacuum environment or other operating conditions limited by the substrate 5, the plasma processing apparatus 1 or the relevant facilities adapted to the vacuum environment.

另外,塗佈之基材5態樣可為三態(即固態、液態以及氣態)之物質,例如棉物體、塑膠、紡織品、金屬、紙張、尿布、OK繃、液體或空氣等。亦即基材5之態樣不受限於某一特定狀態之物質,方可使用電漿加工裝置1執行奈米微粒108(或混合物60)塗佈作業。如此一來係有利於運用於各領域中各式各樣欲進行改質、鍍膜、消毒滅菌或者是毒性檢測之產品,以提升產品之主要或附加價 值。 In addition, the coated substrate 5 can be tri-state (ie, solid, liquid, and gaseous) materials such as cotton objects, plastics, textiles, metals, paper, diapers, OK stretch, liquid or air. That is, the aspect of the substrate 5 is not restricted to a specific state, and the plasma processing apparatus 1 can be used to perform the coating operation of the nanoparticle 108 (or the mixture 60). In this way, it is beneficial to apply to various products in various fields for product modification, coating, sterilization or toxicity testing to enhance the main or additional price of the product. value.

參閱第四圖,其為本發明之第一實施例之塗佈奈米微粒於基材的設備之液體以及容置槽示意圖。如圖所示,本發明因其塗佈物之基材5態樣為一液體504,於此係將液體504置放於一容置槽502,以供電漿加工裝置1將冷電漿加工完成之奈米微粒108(或混合物60)於出料口104噴出,並塗佈於液體504上以對其進行改質、檢測或消毒滅菌等作業。 Referring to the fourth drawing, it is a schematic diagram of a liquid and a receiving tank of a device for coating nanoparticle on a substrate according to a first embodiment of the present invention. As shown in the figure, the present invention is based on the substrate 5 of the coating material as a liquid 504. Here, the liquid 504 is placed in a receiving groove 502, and the cold processing slurry is processed by the power supply processing device 1. The nanoparticles 108 (or mixture 60) are sprayed at the discharge port 104 and applied to the liquid 504 for modification, detection or sterilization.

參閱第五圖,其為本發明之第二實施例之塗佈奈米微粒於基材的設備之陣列塗佈示意圖。如圖所示,本發明之電漿加工裝置1係可以採複數組合型態之陣列設置,並將該陣列設置之複數電漿加工裝置1呈相對基材5(加工平台6)之設置。其中陣列設置係有利於對大量或者是大面積基材5進行奈米微粒108(或混合物60)塗佈,以達到高速化製程作業。且本發明之塗佈作業係可於常溫常壓之環境下進行,同時亦不受基材5之態樣性質限制而無導致法對其進行完整塗佈。其係有別於傳統電漿加工裝置1於高溫高壓或是真空環境中進行電漿加工,並且受限於設備之尺寸大小或環境限制而無法陣列設置。再者就是受限於基材5之外觀形體或是態樣性質而增加對基材5進行完整塗佈作業之困難度。 Referring to FIG. 5, it is a schematic diagram of array coating of a device for coating nanoparticles on a substrate according to a second embodiment of the present invention. As shown in the figure, the plasma processing apparatus 1 of the present invention can adopt an array arrangement of a plurality of combined types, and the plurality of plasma processing apparatuses 1 provided in the array are disposed opposite to the substrate 5 (processing platform 6). The array arrangement is advantageous for coating the large or large area substrate 5 with the nanoparticle 108 (or mixture 60) to achieve high speed processing. Moreover, the coating operation of the present invention can be carried out under normal temperature and normal pressure conditions, and is also not restricted by the nature of the substrate 5 without causing complete coating of the substrate. It is different from the conventional plasma processing equipment 1 in plasma processing in high temperature and high pressure or vacuum environment, and is limited by the size of the equipment or environmental restrictions and cannot be arrayed. Furthermore, it is limited by the appearance or the nature of the substrate 5 to increase the difficulty of performing a complete coating operation on the substrate 5.

綜合上述,本發明之塗佈奈米微粒於基材的設備及其製造方法,其係利用電漿加工裝置進行冷電漿加工,並將產生之電漿衝擊設置於電漿加工裝置內部之供料棒而釋放複數奈米微粒。而後再將電漿以及該些奈米微粒形成之混合物於電漿加工裝置之出料口噴出,以對相對於出料口之基材進行塗佈作業,進而使基材上附有相關材質之奈米微粒而具有改質、鍍膜、消毒滅菌或毒性檢測之 效。其中塗佈作業係可於常溫常壓下之環境進行,同時基材之態樣性質亦不受限制而可對其進行完整塗佈。另外亦可將電漿加工裝置採陣列設置以對大量或是大面積基材進行塗佈作業,同時將基材設置於加工平台(輸送帶)進行自動化塗佈製程以達高速化作業。 In summary, the apparatus for coating a nanoparticle on a substrate of the present invention and a method of manufacturing the same are used for cold plasma processing by a plasma processing apparatus, and the generated plasma impact is provided in the interior of the plasma processing apparatus. The rods are released to release a plurality of nanoparticles. Then, the plasma and the mixture of the nanoparticles are sprayed out at the discharge port of the plasma processing device to coat the substrate relative to the discharge port, and then the related material is attached to the substrate. Nanoparticles with modification, coating, sterilization or toxicity detection effect. The coating operation can be carried out under normal temperature and pressure, and the substrate can be completely coated without limitation. Alternatively, the plasma processing apparatus may be arranged to perform coating operations on a large number of large-area substrates, and the substrate may be placed on a processing platform (conveyor belt) for an automated coating process to achieve high-speed operation.

本發明確實已經達於突破性之結構,而具有改良之發明內容,同時又能夠達到產業上利用性與進步性,當符合專利法之規定,爰依法提出發明專利申請,懇請 鈞局審查委員授予合法專利權,至為感禱。 The invention has indeed reached a breakthrough structure, and has improved invention content, and at the same time, can achieve industrial utilization and progress. When complying with the provisions of the patent law, the invention patent application is filed according to law, and the application for review by the bureau is required. Legal patents, to the pray.

S1‧‧‧步驟 S1‧‧‧ steps

S2‧‧‧步驟 S2‧‧‧ steps

S3‧‧‧步驟 S3‧‧‧ steps

S4‧‧‧步驟 S4‧‧‧ steps

Claims (6)

一種塗佈奈米微粒於基材的製造方法,其包含步驟:提供一電漿加工裝置,用以進行冷電漿加工;將至少一供料棒設於該電漿加工裝置內;該電漿加工裝置通電及導入一氣體,使該電漿加工裝置進行冷電漿加工並產生電漿,該供料棒被該電漿衝擊而釋放複數奈米微粒,該些奈米微粒由該電漿加工裝置之一出料口噴出,該出料口處係為常溫常壓;以及提供至少一基材,該基材係設於該出料口外相對之位置,該基材處係為常溫常壓,該些奈米微粒係塗佈於該基材上。 A method for producing a coated nanoparticle on a substrate, comprising the steps of: providing a plasma processing device for performing cold plasma processing; and providing at least one supply rod in the plasma processing device; the plasma The processing device is energized and a gas is introduced, the plasma processing device is subjected to cold plasma processing and plasma is generated, and the feeding rod is impacted by the plasma to release a plurality of nano particles, and the nano particles are processed by the plasma. One of the discharge ports of the device is sprayed out, the discharge port is at normal temperature and pressure; and at least one substrate is provided, the substrate is disposed at a position opposite to the discharge port, and the substrate is at normal temperature and pressure. The nanoparticles are coated on the substrate. 如申請專利範圍第1項所述之塗佈奈米微粒於基材的製造方法,其中該電漿加工裝置可採陣列設置,並呈相對該基材以塗佈之設置。 The method for producing a coated nanoparticle according to claim 1, wherein the plasma processing apparatus is disposed in an array and is disposed to be coated with respect to the substrate. 如申請專利範圍第1項所述之塗佈奈米微粒於基材的製造方法,其中該供料棒為金屬材料棒、合金材料棒、碳材料棒、高分子材料或陶瓷。 The method for producing a coated nanoparticle according to claim 1, wherein the supply rod is a metal material rod, an alloy material rod, a carbon material rod, a polymer material or a ceramic. 如申請專利範圍第1項所述之塗佈奈米微粒於基材的製造方法,其中該些奈米微粒係為 金屬、氧化物、氮化物、碳化物、高分子材料或陶瓷之微粒。 The method for producing a coated nanoparticle according to claim 1, wherein the nanoparticle is Particles of metals, oxides, nitrides, carbides, polymeric materials or ceramics. 如申請專利範圍第1項所述之塗佈奈米微粒於基材的製造方法,其中該基材為棉物體、塑膠、紡織品、金屬、紙張或液體。 The method for producing a coated nanoparticle according to claim 1, wherein the substrate is a cotton object, a plastic, a textile, a metal, a paper or a liquid. 如申請專利範圍第1項所述之塗佈奈米微粒於基材的製造方法,其中該基材係設於一加工平台上,該加工平台係呈靜置狀態或輸動狀態。 The method for producing a coated nanoparticle according to claim 1, wherein the substrate is disposed on a processing platform, and the processing platform is in a static state or a transport state.
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