TWI594195B - Fingerprint identification device and method - Google Patents

Description

Fingerprint identification device and method

The present invention relates to the technical field of biometric sensing, and more particularly to a fingerprint identification device and method.

Due to the rise of e-commerce and the development of remote payment, the commercial demand for biometric identification is rapidly expanding, and biometric identification technology can be divided into fingerprint identification technology, iris recognition technology and DNA identification technology. Considering the requirements of efficiency, safety, and non-intrusion, fingerprint identification has become the technology of choice for biometric identification. Fingerprint identification technology is also available in optical, thermal, ultrasonic and capacitive. Among them, capacitive technology stands out under the comprehensive considerations of device size, cost, power saving, reliability, and anti-counterfeiting.

The conventional capacitive fingerprint identification technology has the form of sliding type, full finger pressing type and the like. Among them, the all-finger push type wins in recognition, efficiency and convenience. However, due to the extremely small size of the sensing signal and the complexity of the surrounding noise, the finger-finger fingerprinting technology can only be used on the integrated circuit chip with the sensing electrode and the sensing circuit, and less than 100 micrometers. The (μm) thickness of the sapphire film is protected. Such material costs and packaging process costs remain high, and product life and tolerance are a concern. Therefore, the industry is not committed to improving the sensing sensitivity and signal noise ratio, so that the sensing distance between the sensing electrode and the fingerprint can be maximized, so that the package of the sensing integrated circuit can be simplified, or straight. It is placed under the protective glass for induction; moreover, it is expected to further place the sensing electrode on the substrate outside the integrated circuit to significantly reduce the wafer area and integrate the sensing electrode under the protective glass, even Integrated into the display panel, to greatly reduce costs and improve the life and tolerance of the product, there is still much room for improvement in fingerprint identification technology.

The object of the present invention is mainly to provide a fingerprint identification device for sequentially or dynamically dividing a plurality of electrodes into at least one sensing electrode group and a corresponding plurality of deflection electrode groups by using a plurality of selection switching elements. The at least one electrode is selected as a sensing electrode group (sensing block) sequentially or dynamically. When the sensing electrode group (sensing block) spans different electrode regions, the biasing signal of the original electrode region can be selected and applied to the deflecting focus. The block may also select a biasing signal of the new electrode region and apply it to the deflecting focus block, thereby allowing the power lines on the sensing block electrodes to be gathered and arched, thereby improving the sensing sensitivity and increasing the effective sensing distance. Improve the signal noise ratio, improve the stability and correctness of the sensing signal, and greatly reduce the cost of the fingerprint sensing device.

According to a feature of the present invention, a fingerprint identification device includes a substrate, at least two electrode regions, at least one dedicated inductive signal trace, a plurality of electrode selection switch groups, and a plurality of traces. Each of the at least two electrode regions includes a plurality of electrodes. The plurality of traces are divided into a first direction trace and a second direction trace, and the first direction trace is approximately perpendicular to the second direction trace; wherein the plurality of electrode selection switch groups are sequentially or dynamically from the respective electrodes At least one of the plurality of electrodes of the region is a sensing electrode group, and the surrounding electrode of the sensing electrode group is planned as a corresponding plurality of deflecting electrode groups, and each sensing electrode group corresponds to at least two deflecting electrode groups, the at least two Each of the deflecting electrode groups of the deflecting electrode group includes a plurality of electrodes.

According to another feature of the present invention, the present invention provides a fingerprint identification device comprising: a substrate, a plurality of electrode regions, and a plurality of first direction traces. Each of the electrode regions includes a plurality of electrodes, a plurality of second direction traces, a plurality of electrode selection switch groups, a plurality of sensing and bias signal selection switch groups, and at least one dedicated inductive signal trace. The plurality of electrode systems are implanted on the substrate in a first direction and a second direction, the first direction and the second direction being perpendicular to each other. The plurality of second direction traces extend along the second direction, the second direction traces corresponding to the plurality of electrodes, each of the electrode selection switch groups includes a plurality of select switch elements, and each of the electrode selection switches The group corresponds to an electrode. Each of the sensing and biasing signal selection switch sets is connected to a plurality of second direction traces. The at least one dedicated inductive signal trace is connected to the plurality of inductive and bias signal selection switch groups of the electrode region. The plurality of first direction traces extend along a first direction, and the first direction trace corresponds to a plurality of electrodes of the plurality of electrode regions.

According to still another feature of the present invention, the present invention provides a fingerprint identification method for use in a fingerprint identification device having a plurality of electrode regions, each of which includes at least one dedicated inductive signal trace. a plurality of electrodes, a plurality of electrode selection switch groups, and a plurality of sensing and bias signal selection switch groups, each of the electrode selection switch groups respectively corresponding to an electrode, the plurality of electrodes being implanted in a sensing plane in a matrix The fingerprint identification method includes: (A) sequentially or dynamically selecting the switch group and the plurality of sensing and biasing signal selection switch groups through the plurality of electrodes, and simultaneously planning at least three of the plurality of electrodes in each electrode region. Each of the at least three blocks is a sensing block, a biasing focusing block and a convergence stable block, wherein each of the biasing focusing blocks is composed of electrodes surrounding each sensing block. Each of the convergent stable blocks is composed of an electrode surrounded by the deflecting focus block; (B) each of the at least one dedicated electrode region Applying a sense excitation signal to the electrodes of each of the sensing blocks; (C) respectively applying a biasing focus signal to the electrodes of the deflecting focus block of each electrode region; (D) applying each a convergence stabilization signal in each And (E) outputting an inductive signal to a self-capacitance sensing circuit for performing fingerprint detection on the electrode of the convergence stable block of the electrode region; and (E) the at least one dedicated inductive signal trace from each electrode region.

100‧‧‧Finger identification device

110‧‧‧Substrate

120‧‧‧Electrode zone

130‧‧‧The first direction

140‧‧‧Second direction

150‧‧‧Induction signal routing

160‧‧‧First induction and deflection electrode planning setting circuit

170‧‧‧Second induction and deflection electrode planning setting circuit

125‧‧‧electrode

180‧‧‧Electrode selection switch group

200‧‧‧Induction and Deviation Signal Selector Switch Group 190 Control Circuit

121,122,123,124‧‧‧electrode area

S1, S2, S3, S4, ..., Sk, ..., Sn‧‧‧ sense excitation signal

R1, R11, R21, R31‧‧‧ biased focus signals

R2, R12, R22, R32‧‧‧ convergence stabilization signal

G1‧‧‧Amplifier Circuit

G2‧‧‧Amplifier Circuit

310‧‧‧First selection device

320‧‧‧Second selection device

1Yp~1Y0, 2Yp~2Y0,...,mYp~mY0‧‧‧Weft

11L3~11L1, 12L3~12L1,...,1nL3~1nL1,...,3nL3~3nL1‧‧‧ warp

601‧‧‧first column electrode

602‧‧‧Second column electrode

603‧‧‧third column electrode

11X1~11X0, 12X1~12X0,...,1nX1~1nX0,...,3nX1~3nX0‧‧‧Control signal line

191~199‧‧‧Induction and bias signal selection switch group

(A)~(E)‧‧‧ steps

1 is a schematic view of a preferred embodiment of a fingerprint identification device of the present invention.

2 is another schematic diagram of a preferred embodiment of a fingerprint identification device of the present invention.

3A to 3C are schematic views of a signal generating circuit of the present invention.

4 and 5A to 5F are schematic views of the operation of the present invention.

Figure 6 is a schematic view showing the operation of the electrode and electrode selection switch group of the present invention.

Figure 7 is a circuit diagram of an electrode selection switch group of the present invention.

Figure 8 is a circuit diagram of the sensing and biasing signal selection switch group of the present invention.

9 and 10A to 10F are schematic views of another operation of the present invention.

11 is a schematic diagram of a truth table of the inductive and bias signal selection switch group (191) of the present invention.

12, FIGS. 13A to 13F and FIGS. 14A to 14F are still another operational diagram and still another operational diagram of the present invention.

Figure 15 is a schematic illustration of the truth table of the inductive and biased signal selection switch set (192) of the present invention.

Figure 16 is a schematic diagram of the truth table of the inductive and biased signal selection switch set (193) of the present invention.

Figure 17 is a schematic illustration of the truth table of the inductive and biased signal selection switch set (194) of the present invention.

18, 19A to 19F and Figs. 20A to 20F are schematic diagrams of further and further operations of the present invention.

Figure 21 is a schematic diagram of the truth table of the inductive and biased signal selection switch set (195) of the present invention.

Figure 22 is a schematic illustration of the truth table of the inductive and biased signal selection switch set (196) of the present invention.

Figure 23 is a schematic illustration of the truth table of the inductive and biased signal selection switch set (197) of the present invention.

Figure 24 is a schematic illustration of the truth table of the inductive and biased signal selection switch set (198) of the present invention.

Figure 25 is a schematic illustration of the truth table of the inductive and biased signal selection switch set (199) of the present invention.

Figure 26 is a flow chart of the fingerprint identification method of the present invention.

1 is a schematic diagram of a preferred embodiment of a fingerprint identification device 100 of the present invention. The fingerprint identification device 100 has a substrate 110, at least two electrode regions 120, a plurality of first direction traces 130, a plurality of second direction traces 140, at least one dedicated sense signal trace 150, a first sense and The deflection electrode planning setting circuit 160, a second sensing and deflection electrode planning setting circuit 170, a plurality of electrodes 125, a plurality of electrode selection switch groups 180, a plurality of sensing and biasing signal selection switch groups 190, and a control circuit 200.

The substrate 110 is preferably a compound of glass, polymeric film material, metal, ruthenium, or osmium. A plurality of electrodes 125 and a plurality of electrode selection switch groups 180 are disposed on the substrate 110. The plurality of electrodes 125 and the plurality of electrode selection switch groups 180 are implanted on the substrate 110 in a row along the first direction (X) and the second direction (Y), the first direction (X) and the second direction ( Y) is perpendicular to each other. Each of the electrode selection switch groups 180 corresponds to one electrode 125. Each of the electrode selection switch groups 180 corresponds to the electrode 125 and is at least partially overlapped at the same position. FIG. 1 shows that both the electrode selection switch group 180 and the electrode 125 are present, so the electrode selection switch group 180 and the electrode 125 are depicted. A slight offset for the position.

The plurality of electrodes 125 of the substrate 110 are divided into at least two electrode regions 120. Correspondingly, the plurality of electrode selection switch groups 180 are divided into a plurality of electrode region selection switch groups. As shown in FIG. 1, the plurality of electrode selection switch groups 180 in the electrode region 121 form a first electrode region. Choose to open In the group, the plurality of electrode selection switch groups 180 in the electrode region 122 form a second electrode region selection switch group.

The plurality of electrode selection switch groups 180 are field effect transistors or thin film transistors implanted on the substrate 110. The plurality of electrode selection switch groups 180 sequentially or dynamically select at least one of the plurality of electrodes 125 of the respective electrode regions 121 and 122 as the sensing electrode group, and plan the peripheral electrodes of the sensing electrode group to correspond to the plurality of deflections. The electrode group, each of the sensing electrode groups corresponds to at least two deflecting electrode groups, and each of the at least two deflecting electrode groups includes a plurality of electrodes.

The plurality of first direction traces 130 extend along a first direction (X) that corresponds to a plurality of electrodes 125 of the plurality of electrode regions 120. Each of the plurality of first direction traces 130 is electrically interconnected to at least one electrode select switch group 180 of the plurality of electrode select switch groups 180. As shown in FIG. 1, the first direction traces 130 (1Y0~1Y2) are connected and control a plurality of electrode selection switch groups 180 in the same column. The first direction trace 130 controls the electrode selection switch group 180 to determine which of the second direction traces 140 (11L1 to 11L3) is electrically connected to the electrode 125. At the same time, the control signals 11X0~11X1 control the inductive and bias signal selection switch group 190 to select each of the second direction traces 140 (11L1~11L3) and the at least one dedicated inductive signal trace 150 (S1, R11, R12). One of them is connected. The same is true of others, and will not be repeated.

The plurality of second direction traces 140 extend along the second direction (Y), and the second direction traces 140 correspond to the plurality of electrodes 125. Each of the plurality of sensing and biasing signal selection switch groups 190 is coupled to a plurality of second direction traces 140.

The first sensing and deflection electrode planning setting circuit 160 is connected to the plurality of sensing and biasing signal selection switch groups 190 and the control circuit 200. The first sensing and deflection electrode planning setting circuit 160 is disposed along the first direction (X). plant. The first sensing and deflection electrode planning setting circuit 160 is a displacement register circuit. The first sensing and deflecting electrode planning setting circuit 160 outputs a control signal to the sensing and biasing signal selection switch group 190, and selects each of the second direction traces 140 and a sensing excitation signal S1 or The biasing focus signal R11 and the convergence stabilization signal R12 are electrically connected. In other embodiments, the first inductive and deflection electrode planning setting circuit 160 is composed of an address decoder and a data latch circuit. The sensing excitation signal S1, the biasing focus signal R11, and the convergence stabilization signal R12 are respectively represented by S1, R11, and R12, and S1, R11, and R12 are respectively used to represent the transmission sensing excitation signal, the biasing focus signal, and the convergence stabilization signal. Traces.

The second sensing and deflection electrode planning setting circuit 170 is connected to the plurality of first direction routing lines 130 and the control circuit 200, and is implanted along the second direction (Y). The second sensing and deflection electrode planning sets an electrical circuit 170 to a displacement register circuit. The second inductive and deflecting electrode planning setting circuit 170 outputs a control signal to the first direction trace 130, and the selected electrodes are electrically connected to the second direction trace 140. In other embodiments, the second inductive and deflecting electrode planning setting circuit 170 is composed of an address decoder and a data latch circuit.

The control circuit 200 is connected to the first inductive and deflecting electrode planning and setting circuit 160 and the second inductive and deflecting electrode planning and setting circuit 170 to set the first inductive and deflecting electrode planning and setting circuit 160 and the second inductive and deflecting electrode The plan setting circuit 170 sequentially or dynamically selects at least one electrode from the plurality of electrodes 125 of each electrode region 120 as a sensing electrode group, and plans the surrounding electrode of the sensing electrode group as a corresponding plurality of deflecting electrode groups, each A sensing electrode group corresponds to at least two deflection electrode groups, and each of the at least two deflection electrode groups includes a plurality of electrodes.

That is, at least three blocks can be planned in the plurality of electrodes 125 of the electrode region 121, and the at least three blocks are respectively a sensing block, a biasing focusing block, and a convergence stable block. The sensing electrode group is the sensing block, and the at least two deflection electrode groups are respectively a focusing focusing block and a convergence stable block. Each of the deflection focusing blocks is composed of electrodes surrounding each sensing block, and each of the convergence stable blocks is composed of electrodes surrounding the focusing block.

The control circuit 200 can respectively shift the position of the selected sensing electrode group and its deflection electrode group in the first direction (X) or the second direction (Y).

The control circuit 200 can be disposed on the substrate 110. The control circuit 200 can also be disposed on a flexible circuit board and connected to the first inductive and deflecting electrode planning and setting circuit 160 and the second inductive and deflecting electrode via a line of wires. The setting circuit 170 is planned.

As shown in FIG. 1 , the electrode region 121 and the electrode region 122 respectively have respective sensing excitation signals S1 and sensing excitation signals S2 .

2 is another schematic diagram of a preferred embodiment of a fingerprint identification device 100 of the present invention. The difference between FIG. 1 and FIG. 1 is that a first sensing and deflecting electrode planning setting circuit 160 and a corresponding plurality of sensing and biasing signal selection switch groups 190 are disposed on the substrate 110 at the same time. Thereby, the plurality of electrodes 125 of the substrate 110 can be divided into four electrode regions 121, 122, 123, 124. At the same time, the sensing excitation signal S1 of the electrode region 121 extends to the electrode region 122, and the sensing excitation signals S2, S3, S4 of the electrode region 122 extend to the electrode region 121.

3A to 3C are schematic views of a signal generating circuit of the present invention. The sensing excitation signals S1, S2, and S3 generate biasing signals R1, R11, R21, and R31 and convergence stabilization signals R2, R12, R22, and R32. The sensing excitation signals S1, S2, and S3 are periodic or non-periodic alternating signals. The sensing excitation signals S1, S2, S3 are electrically connected to the sensing electrode group (or the sensing block).

When the sensing electrode group (or the sensing block) senses the touch or proximity of an external object, the sensing excitation signals S1, S2, S3 applied to the sensing electrode group (or the sensing block) become An inductive signal. Therefore, the at least one dedicated sensing signal line 150 of each electrode region 120 can output an inductive signal to a self-capacitance sensing circuit for fingerprint detection. In an embodiment, since the traces S1, S2, and S3 in the at least one dedicated inductive signal trace 150 are connected to the sensing electrode group (or the sensing block), the sensing may be performed by the traces S1, S2, and S3. The signal is output to the self-capacitance sensing circuit. The self-capacitance sensing circuit can be located in the control circuit 200 or a separate integrated circuit.

The sense excitation signal S1 is processed by the signal amplifier circuit G1 having a gain of not less than zero to form the deflection focus signals R1, R11 in phase with the sense excitation signal S1. The bias The focus signal R1, R11 is electrically connected to one of the at least two deflection electrode groups (biased focus block). The at least one signal amplifier circuit G1 having a gain of not less than zero is implanted on the substrate 110 or implanted in an integrated circuit (not shown) outside the substrate 110. The gain value of the at least one signal amplifier circuit G1 whose gain is not less than zero is a fixed value or programmable.

The sense excitation signal S1 is processed by the signal amplifier circuit G2 with at least one gain not greater than zero to form the convergence stable signal R2, R12 which is opposite to the sense excitation signal S1. The convergence stabilization signal R2, R12 is electrically connected to one of the at least two deflection electrode groups (convergence stable block). The at least one signal amplifier circuit G2 having a gain of not more than zero is implanted on the substrate 110 or implanted in an integrated circuit (not shown) outside the substrate 110. The gain value of the at least one signal amplifier circuit G2 whose gain is not greater than zero is fixed or programmable. The other sensing excitation signals S2, S3, the biasing focus signals R21, R31, and the convergence stabilization signals R22, R32 are also the same as above, and therefore will not be described again.

The biasing signal R11 applied to each of the electrode regions 120 is derived from the corresponding inductive signal of the sensing electrode group (or the sensing block) or the in-phase signal generated by the sensing excitation signal S1 via a circuit. The convergence stabilization signal R12 applied to each electrode region 120 is derived from the corresponding sensing signal group (or the sensing block) of the sensing signal or the sensing signal S1 is generated by a circuit. .

In other embodiments, the biasing signal R11 applied to each of the electrode regions 120 is commonly derived from the sensing signal or the sensing excitation signal S1 selected from one of the specific sensing electrode groups (or a specific sensing block). The in-phase signal generated by the circuit. The convergence stabilization signal R12 applied to each electrode region 120 is commonly derived from the sensing signal selected from one of the specific sensing electrode groups (or a specific sensing block) or the inversion signal generated by the sensing excitation signal S1 via a circuit. .

In other embodiments, the convergence stabilization signal R12 applied to each electrode region 120 is a current reference potential or ground signal.

The signal amplifier circuit G2, which has a gain of not more than zero, is processed to form a signal inverted from the sense excitation signal S1, and then passed through a first selection device 310 to be outputted by the amplifier circuit G2, a current reference potential or a The ground signal is selected to generate a convergence stable signal R2.

In FIG. 3B, the sensing excitation signal S1 is processed by the signal amplifier circuit G2 having a gain of not more than zero to form a signal inverted from the sensing excitation signal S1, and then passed through a first selecting device 310. The output of the amplifier circuit G2, the current reference potential or a ground signal is selected to generate a convergence stabilization signal R2. In FIG. 3C, the sensing excitation signals S1, S2, S3, . . . , Sn of each electrode region 120 are selected via a second selecting device 320 to generate a biasing focus signal R1 and a convergence stabilization signal R2.

4 and 5A to 5F are schematic views of the operation of the present invention. In FIG. 4, a plurality of electrodes 125 on the substrate 110 are divided into a plurality of electrode regions 121, 122, 123, . In the plurality of electrodes 125 of each of the electrode regions 121, 122, 123, ..., three blocks can be planned, which are respectively sensing blocks (indicated by oblique dashed lines), biased focusing blocks (represented by horizontal solid lines), and convergence stable blocks. (indicated by vertical solid lines). As shown in FIG. 4, the sensing excitation signals S1, S2, S3 or the sensing excitation signal traces S1, S2, and S3 are respectively present in the corresponding electrode region 1, the electrode region 2, and the electrode region 3, and there is no cross. Connect to its adjacent electrode area.

5A to 5F are schematic diagrams showing the positional movement of the sensing block group composed of the sensing block, the deflecting focusing block, and the convergence stable block across the electrode area 1 and the electrode area 2. In FIGS. 5A to 5F, the electrodes 125 of the sensing block respectively start with an S letter, for example, S1, S2, and S3 respectively represent three sensing blocks. The electrode 125 of the biasing focus block is labeled R1, and the electrode 125 of the convergence stable block is labeled R2. That is, in the present invention, R1 may represent an electrode to which the biasing signal R1 is applied, or may represent a biasing signal, and others may be.

As shown in FIG. 5A, a sensing block group composed of the sensing block, the deflecting focusing block, and the convergence stable block is located at a boundary between the electrode region 1 and the electrode region 2. As shown in FIG. 5B, the location of the sensing block group spans the boundary between the electrode region 1 and the electrode region 2, and is larger than one electrode. small. As shown in Figure 5C, there are more than two electrode sizes. So on and so forth. It should be noted that when the electrode 125 of the sensing block is originally applied with the sensing excitation signal S1, when it enters the electrode region 2, the sensing excitation signal S2 is applied as shown in FIG. 5D.

Figure 6 is a schematic illustration of the operation of the electrode and electrode selection switch set 180 of the present invention. As shown in FIG. 6, the electrodes 125 of the sensing block start with an S letter. The electrode 125 of the biasing focus block is labeled R1, and the electrode 125 of the convergence stable block is labeled R2. Referring to FIG. 4 and FIGS. 5A to 5F, each electrode 125 has five bits, wherein the lower three bits (bit2, bit1, bit0) correspond to three latitudes 1Yp~1Y0, 2Yp~2Y0. , ..., mYp~mY0, for controlling which of the electrodes 125 of the column are electrically connected to the warp wires 11L3~11L1, 12L3~12L1, ..., 1nL3~1nL1, ..., 3nL3~3nL1, among them p, m, and n are integers.

Referring to FIG. 4, FIG. 5A to FIG. 5F and FIG. 6, the first row (row) electrode 601 has a latitude signal of 001, indicating that each electrode 125 on the first row electrode 601 corresponds to the row electrode 601. The first warp threads 11L1, 12L1, ..., 1nL1, ..., 3nL1 are electrically connected. The second column electrode 602 has a latitude signal of 010, indicating that each electrode 125 on the second row electrode 602 is respectively associated with a second warp beam 11L2, 12L2, ..., 1nL2, ... 3nL2 is electrically connected. The third column electrode 603 has a latitude signal of 100, indicating that each of the electrodes 125 on the third row electrode 603 and its corresponding third warp line 11L3, 12L3, ..., 1nL3, ... 3nL3 is electrically connected.

Figure 7 is a circuit diagram of the electrode selection switch group 180 of the present invention. In the present invention, all of the electrode selection switch groups 180 have the same circuit configuration. As shown in FIG. 7, it shows a circuit diagram of the electrode selection switch group 180, a corresponding transistor circuit, and a corresponding truth table. That is, the weft 1Y2~1Y0 is 001, indicating that the corresponding electrode 125 is electrically connected to its first warp 11L1. The weft 1Y2~1Y0 is 010, indicating that the corresponding electrode 125 is electrically connected to its second warp 11L2. The weft 1Y2~1Y0 is 100, indicating that the corresponding electrode 125 is electrically connected to its third warp 11L3, and so on. That is, the electrode selection switch group 180 uses one-hot encoding.

The upper two bits (bit 4, bit 3) on each electrode 180 correspond to two control signal lines 11X1 to 11X0, 12X1 to 12X0, ..., 1nX1 to 1nX0, ..., 3nX1 to 3nX0 to control the warp 11L3. ~11L1, 12L3~12L1, ..., 1nL3~1nL1, ..., 3nL3~3nL1 are electrically connected to the sensing excitation signal S1, S2, S3 or the defocusing signal R1 and the convergence stabilization signal R2. As shown in FIGS. 4 and 6, the control signals 11X1 to 11X0, 12X1 to 12X0, ..., 1nX1 to 1nX0, ..., 3nX1 to 3nX0 are two bits, which can form four states. In the embodiment of FIG. 4, each of the warp threads 11L3~11L1, 12L3~12L1, ..., 1nL3~1nL1, ..., 3nL3~3nL1 has only three warp lines and three signal lines S1, R1, R2. Therefore, only three states are required, which are state 0, state 1, and state 2.

FIG. 8 is a circuit diagram of the inductive and bias signal selection switch group 190 of the present invention. In Fig. 4, the sense and bias signal selection switch groups 190, 191 have the same circuit configuration. However, in the subsequent drawings, the induction and bias signal selection switch groups have different circuit configurations. As shown in FIG. 8, it shows a circuit diagram of the inductive and bias signal selection switch group 191, a corresponding transistor circuit, and a corresponding truth table. State 0, State 1, and State 2 respectively control the sensing and biasing signal selection switch group 191, thereby controlling the connection relationship between the warp and the signal line.

In state 0 (00b), the warp 11L1 is connected to the signal line R2, the warp 11L2 is connected to the signal line R2, and the warp 11L3 is connected to the signal line R2. In state 1 (01b), the warp 11L1 is connected to the signal line R2, the line 11L2 is connected to the signal line R1, and the line 11L3 is connected to the signal line R1. In state 2 (10b), the warp 11L1 is connected to the signal line R2, the warp line 11L2 is connected to the signal line R1, and the warp line 11L3 is connected to the signal line Sk, wherein the signal line Sk is S1, S2, S3.

With the aforementioned control method, the sensing block composed of the electrode labeled S is connected to the sensing excitation signal Sk. The deflecting focus block formed by the electrode labeled R1 is connected to the deflecting focus signal R1. The convergence stable block, which is labeled R2, is connected to the convergence stabilization signal R2. The biasing focus signal R1 and the convergence stabilization signal R2 are signals in phase with the sensing excitation signal Sk on the sensing block. The signal, or other specific potential signal; the specific potential signal is a zero potential, a positive potential, a negative potential or an alternating potential signal.

The control circuit 200 controls the plurality of electrode selection switch groups 180 and the plurality of inductive and bias signal selection switch groups 190 by setting the first inductive and deflecting electrode plan setting circuit 160 and the second inductive and deflecting electrode plan setting circuit 170. As shown in FIG. 5A to FIG. 5F, the position of the selected sensing electrode group and its deflecting electrode group is displaced in the first direction or the second direction.

9 and 10A to 10F are schematic views of another operation of the present invention. In FIG. 9, a plurality of electrodes 125 on the substrate 110 are divided into a plurality of electrode regions 121, 122, 123, . In the plurality of electrodes 125 of each of the electrode regions 121, 122, 123, ..., three blocks can be planned, which are a sensing block, a biasing focusing block and a convergence stable block. The main difference between FIG. 9 and FIG. 4 is that the sensing excitation signal trace S1 of the electrode region 121 extends into the electrode region 122, and the sensing excitation signal trace S2 of the electrode region 122 extends into the electrode region 123, and so on.

The main difference between FIG. 10 and FIG. 5 is that, in FIG. 5, the sensing block includes only one electrode, and in FIG. 10, the sensing block includes four electrodes. As shown in FIG. 10A, an electrode block group composed of the sensing block, the deflecting focus block, and the convergence stable block is located at a boundary between the electrode region 1 and the electrode region 2. As shown in FIG. 10B, the position of the electrode block group spans the boundary of the electrode region 1 and the electrode region 2, and exceeds one electrode size. As shown in Figure 10C, there are more than two electrode sizes. So on and so forth. It should be noted that, as shown in FIG. 10D, the electrode 125 of the sensing block is originally applied with the sensing excitation signal S1, and when it crosses only one electrode size to the electrode region, it is still applied with sensing excitation. Signal S1. As shown in FIG. 10E, the electrode 125 of the sensing block is originally applied with the sensing excitation signal S1, and when the electrode 125 of the sensing block is entirely inserted into the electrode region 2 (two electrode sizes), A sensing excitation signal S2 is applied. The electrode 125 of the electrode block group originally at the boundary between the electrode region 2 and the electrode region also follows this principle.

To achieve the function of FIG. 10, the sensing and biasing signal selection switch group 190 of FIG. 9 can be divided into two types, one for the sensing and biasing signal selection switch group 190, 191 and the sensing and biasing signal selection in FIG. The circuit of the switch group 191 is the same. The other is shown in Figure 11. Figure 11 is a schematic diagram of the truth table of the inductive and biased signal selection switch set 190, 192 of the present invention. The truth table above Figure 11 is a truth table of the general form. For the inductive and bias signal selection switch group 192 in FIG. 9, the corresponding k value is 2, so k=2, j=1 are substituted into the upper truth table, so that the sensing and bias signal selection switch group can be obtained. 192 truth table. Engineers familiar with digital logic design can generate related circuits according to the truth table of Figure 11.

Similarly, for the inductive and bias signal selection switch group 192 located in the electrode region three and adjacent to the electrode region two, k=3, j=2 can be substituted into the upper truth table, and the electrode region 3 and the adjacent electrode can be obtained. The truth table of the sensing and biasing signal selection switch group 192 of the zone 2 also has the same truth table and circuit structure as that of FIG.

12, 13A to 13F and Figs. 14A to 14F are still further schematic diagrams of still another operation of the present invention. In FIG. 12, a plurality of electrodes 125 on the substrate 110 are divided into a plurality of electrode regions 121, 122, 123, . The main difference between FIG. 12 and FIG. 9 is that the sensing excitation signal trace S1 of the electrode region 121 extends into the electrode region 122, and the sensing excitation signal trace S2 of the electrode region 122 extends into the electrode region 123, and so on. The deflected focus signal line R11 of the electrode region 121 extends into the electrode region 122, and the deflected focus signal trace R21 of the electrode region 122 extends into the electrode region 123, and so on. The deflected focus signal line R21 of the electrode region 122 extends into the electrode region 121, and the deflected focus signal trace R31 of the electrode region 123 extends into the electrode region 122, and so on.

As shown in FIG. 13A, the electrode block group composed of the sensing block, the deflecting focus block, and the convergence stable block is located at a boundary between the electrode region 1 and the electrode region 2. As shown in FIG. 13B, the position of the electrode block group spans the boundary of the electrode region 1 and the electrode region 2, and exceeds one electrode size. As shown in Figure 13C, there are more than two electrode sizes. So on and so forth. It should be noted that, as shown in FIG. 13C, among the deflecting focusing blocks of the electrode block group, the electrode that has entered the electrode region 2 is still applied with the biasing signal trace R11 of the electrode region 1. In Figure 13D, when the sensing block of the electrode block group After all the electrodes have entered the electrode region 2, not only the electrodes of the sensing block are applied with the sensing excitation signal S2 of the electrode region 2, but also all the electrodes of the deflecting focusing block corresponding to the sensing block are applied. The deflection of the electrode region 2 is focused on the signal R21. Even if the biasing block is in the electrode region, the electrode of the electrode region is still applied with the biasing signal R21 of the electrode region 2. The electrode of the electrode block group at the boundary between the electrode region 2 and the electrode region also follows this principle.

As shown in FIG. 14A, the electrode block group composed of the sensing block, the deflecting focus block, and the convergence stable block is located at a boundary between the electrode region 1 and the electrode region 2. As shown in FIG. 14B, the sensing block, the deflecting focus block, and the convergence stable block group are located across the boundary of the electrode region 1 and the electrode region 2, and exceed one electrode size. As shown in Figure 14C, there are more than two electrode sizes. So on and so forth. It is noted that, as shown in FIG. 14D, when half of the electrodes of the sensing block in the electrode block group straddle the electrode area 2, the electrode area is biased toward the electrode of the electrode area 2 in the focusing block. The deflection focus signal R11 of the electrode region one is still applied. In FIG. 14E, when all the electrodes of the sensing block of the electrode block group enter the electrode region 2, all the electrodes in the electrode region biasing the focusing block are applied with the deflecting focus signal R21 of the electrode region 2. Even if the biasing block is in the electrode region, the electrode of the electrode region is still applied with the biasing signal R21 of the electrode region 2. The electrode of the electrode block group at the boundary between the electrode region 2 and the electrode region also follows this principle.

To achieve the functions of FIG. 13 and FIG. 14, the sensing and biasing signal selection switch group 190 of FIG. 12 can be divided into an inductive and bias signal selection switch group 191, an inductive and bias signal selection switch group 192, and an inductive and bias signal selection switch group 193. There are four types of sensing and biasing signal selection switch groups 194. The sensing and biasing signal selection switch group 191 is the same as the circuit of the sensing and biasing signal selection switch group 191 in FIG. 15 is a schematic diagram of a truth table of the inductive and bias signal selection switch group 192 of the present invention. The truth table above Figure 15 is a truth table of the general form. For the inductive and bias signal selection switch group 192 in FIG. 12, the corresponding k value is 2, so k=2 and j=1 are substituted into the upper truth table, so that the sensing and bias signal selection switch group can be obtained. 192 truth table.

16 is a schematic diagram of a truth table of the inductive and bias signal selection switch group 193 of the present invention. The truth table above Figure 16 is a truth table of the general form. For the inductive and bias signal selection switch group 193 in FIG. 16 , the corresponding k value is 2, so k=2 and j=1 are substituted into the upper truth table, so that the sensing and bias signal selection switch group can be obtained. 193 truth table.

17 is a schematic diagram of a truth table of the inductive and biased signal selection switch group 194 of the present invention. The truth table above Figure 17 is a truth table of the general form. For the inductive and bias signal selection switch group 194 in FIG. 17, the corresponding k value is 1, so k=1 and l=2 are substituted into the upper truth table, so that the sensing and bias signal selection switch group can be obtained. The truth table of 194.

18, 19A to 19F and Figs. 20A to 20F are schematic diagrams of further and further operations of the present invention. In FIG. 18, a plurality of electrodes 125 on the substrate 110 are divided into a plurality of electrode regions 121, 122, 123, . The main difference between FIG. 18 and FIG. 12 is that the sensing excitation signal trace S1 of the electrode region 121, the biased focus signal trace R11, the convergence stable signal trace R12 extend into the electrode region 122, and the deflected focus signal trace of the electrode region 122. R21, the convergence stable signal trace R22 extends into the electrode region 121, and so on.

As shown in FIG. 19A, the electrode block group composed of the sensing block, the deflecting focus block, and the convergence stable block is located at a boundary between the electrode region 1 and the electrode region 2. As shown in FIG. 19B, the position of the electrode block group spans the boundary of the electrode region 1 and the electrode region 2, and exceeds one electrode size. As shown in Fig. 19C, there are more than two electrode sizes. So on and so forth. It should be noted that, as shown in FIG. 19C, the electrode that enters the electrode region 2 in the deflection focusing block in the electrode region is still applied with the deflection signal R11 of the electrode region, and all the electrodes of the convergence stable block are also It is also applied to the convergence stabilization signal of the electrode region one. In FIG. 19D, after the electrodes of the sensing block straddle the electrode region 2, not only the electrodes of the sensing block are modified to apply the sensing excitation signal S2, but also all the electrodes of the biasing focusing block are applied. The deflection of the electrode region 2 is focused on the signal R21. Even if the biasing block is in the electrode region, the electrode of the electrode region is still applied with the biasing signal R21 of the electrode region 2. And all the electrodes of the convergence stable block are located in the electrode area or The electrode region 2 is also changed to the convergence stabilization signal R22 of the electrode region 2. The electrode of the electrode block group at the boundary between the electrode region 2 and the electrode region also follows this principle.

As shown in FIG. 20A, the electrode block group composed of the sensing block, the deflecting focus block, and the convergence stable block is located at a boundary between the electrode region 1 and the electrode region 2. As shown in FIG. 20B, the position of the electrode block group spans the boundary of the electrode region 1 and the electrode region 2, and exceeds one electrode size. As shown in Fig. 20C, there are more than two electrode sizes. So on and so forth. It should be noted that, as shown in FIG. 20D, when one half of the sensing block of the electrode block group enters the electrode region 2, the electrode that enters the electrode region 2 in the biasing focusing block is still applied with the electrode region. One of the deflection focusing signals R11, all the electrodes of the convergence stable block also maintain the convergence stabilization signal R12 of the electrode region one. In FIG. 20E, when all the electrodes of the sensing block of the group of the electrode block enter the electrode region 2, all the electrodes of the sensing block are changed to the sensing excitation signal S2 of the electrode region 2 At the same time, all the electrodes in the deflection focus block are changed to apply the deflection focus signal R21 of the electrode region 2. Even if the biasing block is in the electrode region, the electrode of the electrode region is still applied with the biasing signal R21 of the electrode region 2. Moreover, all the electrodes of the convergence stable region are also changed to apply the convergence stabilization signal R22 of the electrode region 2. The electrode of the electrode block group at the three boundary of the electrode region 2 and the electrode region also follows this principle.

In the embodiment of FIG. 20A to FIG. 20F, all the electrodes of the sensing block of the electrode block group cross the boundary as a basis for changing the applied sensing excitation signal, biasing the focusing signal, and converging the stable signal; In other possible implementation manners, the electrode crossover of any of the sensing excitation blocks may be used as a basis for converting the applied signal; or the electrode crossover of the sensing excitation block may be used as a basis for converting the applied signal; The electrode crossover of the partial focusing block is used as a basis for converting the applied signal; in addition, the widths of the deflecting focus block and the convergence stable block of the above illustrated embodiment are all taken as an example of an electrode size, just for convenience of drawing. Not limited to this.

In order to achieve the functions of FIG. 19 and FIG. 20, the sensing and biasing signal selection switch group of FIG. 18 can be divided into an inductive and bias signal selection switch group 191, an inductive and bias signal selection switch group 195, and a sensing bias. The signal selection switch group 196, the inductive and bias signal selection switch group 197, the inductive and bias signal selection switch group 198, and the inductive and bias signal selection switch group 199 are six types. The sensing and biasing signal selection switch group 191 is the same as the circuit of the sensing and biasing signal selection switch group 191 in FIG. 21 is a schematic diagram of a truth table of the inductive and biased signal selection switch group 195 of the present invention. For the inductive and bias signal selection switch group 195 in FIG. 18, the corresponding k value is 2, so k=2 and j=1 are substituted into the upper truth table, so that the sensing and bias signal selection switch group can be obtained. Truth table of 195. The "*" in Fig. 21 represents "don't care" in the digital circuit design.

22 is a schematic diagram of a truth table of the inductive and bias signal selection switch group 196 of the present invention. For the inductive and bias signal selection switch group 196 in FIG. 18, the corresponding k value is 2, so k=2, j=1 are substituted into the upper truth table, so that the sensing and bias signal selection switch group can be obtained. Truth table of 196.

23 is a schematic diagram of a truth table of the inductive and bias signal selection switch group 197 of the present invention. For the inductive and bias signal selection switch group 197 in FIG. 18, the corresponding k value is 2, so k=2 and j=1 are substituted into the upper truth table, so that the sensing and bias signal selection switch group can be obtained. 197 truth table. The "*" in Fig. 23 represents "don't care" in the digital circuit design.

Figure 24 is a schematic illustration of the truth table of the inductive and biased signal selection switch set 198 of the present invention. For the inductive and bias signal selection switch group 198 in FIG. 18, the corresponding k value is 1, so k=1 and l=2 are substituted into the upper truth table, so that the sensing and bias signal selection switch group can be obtained. 198 truth table. The "*" in Fig. 24 represents "don't care" in the digital circuit design.

25 is a schematic diagram of a truth table of the inductive and bias signal selection switch group 199 of the present invention. For the inductive and bias signal selection switch group 199 in FIG. 18, the corresponding k value is 1, so k=1 and l=2 are substituted into the upper truth table, so that the sensing and bias signal selection switch group can be obtained. 199 truth table. The "*" in Fig. 25 represents "don't care" in the digital circuit design.

The truth table in the present invention can be synthesized into a digital circuit via Synplicity's Synplify Pro synthesizer or Synopsis's DC compiler synthesizer, which is well established by those skilled in the art based on the disclosure of the present invention.

Figure 26 is a flow chart of the fingerprint identification method of the present invention. The fingerprint identification method of the present invention can be applied to the fingerprint identification device 100 of the present invention described above. The fingerprint identification device 100 has a plurality of electrode regions 120, each of which includes at least one dedicated inductive signal trace 150, a plurality of electrodes 125, a plurality of electrode selection switch groups 180, and a plurality of sensing and bias signal selections. The switch group 190, each of the electrode selection switch groups 180 corresponds to an electrode 125, and the plurality of electrodes 125 are arranged in a matrix in a sensing plane. Referring to FIG. 26, in step (A), the fingerprint identification method sequentially or dynamically passes the plurality of electrode selection switch groups 180 and the plurality of sensing and biasing signal selection switch groups 190, and simultaneously the electrode regions 120 Each of the plurality of electrodes is configured with at least three blocks, wherein each of the at least three blocks is a sensing block, a biasing focusing block, and a convergence stable block, wherein each of the biasing focusing blocks is sensed by each sensing The electrodes surrounding the block are composed, and each of the convergence stable blocks is composed of electrodes surrounding the deflection focus block.

In the step (B), a sensing excitation signal is applied to the electrodes of each of the sensing blocks via the at least one dedicated inductive signal trace of each electrode region.

In the step (C), a biasing focus signal is applied to the electrodes of the deflection focusing block of each electrode region.

In step (D), a convergence stabilization signal is applied to the electrodes of the convergent stable block of each electrode region.

In the step (E), the at least one dedicated inductive signal trace from each electrode region respectively outputs an inductive signal to a self-capacitance sensing circuit for fingerprint detection.

The present invention has at least two electrode regions 120 formed in the fingerprint identification device 100, and the plurality of electrodes 125 of the respective electrode regions 120 can be sequentially or dynamically passed through the plurality of electrode selection switch groups 180. At least one electrode selected as the sensing electrode group (sensing block), and the surrounding electrode of the sensing electrode group (sensing block) is planned as a corresponding plurality of deflecting electrode groups (biased focusing block, convergence stable block) Each sensing electrode group (sensing block) corresponds to at least two deflecting electrode groups (biasing focusing block, convergence stable block), the at least two deflecting electrode groups (biasing focusing block, convergence stable block) Each of the deflecting electrode groups includes a plurality of electrodes. The present invention can select at least one electrode as a sensing electrode group (sensing block) sequentially or dynamically. When the sensing electrode group (sensing block) spans different electrode regions 120, the biasing signal of the original electrode region 120 can be selected. And applying to the deflecting focus block, the biasing signal of the new electrode region 120 can also be selected and applied to the deflecting focusing block, so that the power lines on the sensing block electrodes can be gathered and arched, thereby improving the sensing sensitivity. Increase the effective sensing distance, improve the signal noise ratio, improve the stability and correctness of the sensing signal, and greatly reduce the cost of the fingerprint sensing device.

The above-mentioned embodiments are merely examples for convenience of description, and the scope of the claims is intended to be limited to the above embodiments.

100‧‧‧Finger identification device

110‧‧‧Substrate

120‧‧‧Electrode zone

130‧‧‧The first direction

140‧‧‧Second direction

150‧‧‧Induction signal routing

160‧‧‧First induction and deflection electrode planning setting circuit

170‧‧‧Second induction and deflection electrode planning setting circuit

125‧‧‧electrode

180‧‧‧Electrode selection switch group

190‧‧‧Induction and Bias Signal Selection Switch Set

200‧‧‧Control circuit

Claims (24)

A fingerprint identification device comprising: a substrate; at least two electrode regions, each electrode region comprising a plurality of electrodes; at least one dedicated inductive signal trace; a plurality of electrode selection switch groups; and a plurality of traces, the first being divided into The direction line is aligned with the second direction, the first direction line is approximately perpendicular to the second direction line, and the two sets of displacement registers are arranged along the first direction and the second direction, respectively. The first direction and the second direction are perpendicular to each other, and the positions of the selected sensing electrode group and the deflecting electrode group thereof are respectively displaced along the first direction or the second direction via the two sets of displacement registers; wherein the plural The electrode selection switch group sequentially or dynamically selects at least one electrode from the plurality of electrodes in each electrode region as a sensing electrode group, and plans the surrounding electrode of the sensing electrode group as a corresponding plurality of deflection electrode groups, each sensing electrode The group corresponds to at least two deflection electrode groups, and each of the at least two deflection electrode groups includes a plurality of electrodes. The fingerprint identification device of claim 1, wherein the plurality of electrode selection switch groups are divided into a plurality of electrode region selection switch groups, each electrode selection switch group being composed of at least one switching element and corresponding To at least one electrode. The fingerprint identification device of claim 2, wherein each of the plurality of traces is electrically connected to at least one electrode selection switch group of the plurality of electrode selection switch groups. The fingerprint identification device of claim 1, wherein the plurality of electrode selection switch groups are field effect transistors or thin film transistors implanted on the substrate. The fingerprint identification device of claim 1, wherein each of the sensing electrode groups outputs at least one sensing signal. The fingerprint identification device of claim 1, further comprising at least one signal amplifier circuit having a gain of not less than zero. The fingerprint identification device of claim 6, wherein the at least one input of the signal amplifier circuit having a gain of not less than zero is electrically connected to an induction electrode group, and the output end thereof is electrically connected to the at least two At least one deflecting electrode group of the deflecting electrode group. The fingerprint identification device of claim 1, further comprising at least one signal amplifier circuit having a gain of not more than zero. The fingerprint identification device of claim 8, wherein the at least one input of the signal amplifier circuit having a gain of not greater than zero is electrically connected to an induction electrode group, and the output end of the electrical connection is electrically connected to the at least two At least one deflecting electrode group of the deflecting electrode group. A fingerprint identification device comprising: a substrate; a plurality of electrode regions, each electrode region comprising: a plurality of electrodes implanted on the substrate in a first direction and a second direction, the first direction and the second direction And a plurality of second direction lines extending along the second direction, the second direction line corresponding to the plurality of electrodes; a plurality of electrode selection switch groups, each of the electrode selection switch groups comprising a plurality of Selecting a switching element, and each of the electrode selection switch groups corresponds to an electrode; a plurality of sensing and biasing signal selection switch groups, each of the sensing and biasing signal selection switch groups being connected to the plurality of second direction wires; At least one dedicated inductive signal trace connected to the plurality of inductive and bias signal selection switch groups of the electrode region; the plurality of first direction traces extending in a first direction, the first direction trace and plural a plurality of electrodes corresponding to the electrode regions; and a first sensing and deflecting electrode planning setting circuit, wherein the first sensing and deflecting electrode planning and setting circuit is composed of a address decoder and a data latching circuit, or a displacement temporary storage Circuit. The fingerprint identification device of claim 10, wherein the first sensing and deflecting electrode planning setting circuit is implanted along the first direction. The fingerprint identification device of claim 10, further comprising a second sensing and deflection electrode planning setting circuit, wherein the second sensing and deflection electrode planning setting circuit is implanted along the second direction. The fingerprint identification device of claim 12, wherein the second sensing and deflection electrode planning setting circuit is composed of an address decoder and a data latch circuit. The fingerprint identification device of claim 12, wherein the second sensing and deflection electrode planning setting circuit is a displacement register circuit. The fingerprint identification device of claim 10, wherein the second sensing and deflecting electrode planning setting circuit outputs a control signal to the first direction trace, and selects each electrode to be in a second direction Electrical connections. The fingerprint identification device of claim 12, wherein the first sensing and deflecting electrode planning setting circuit outputs a control signal to the sensing and biasing signal selection switch group, and selects each of the second direction lines and one The inductive signal or a biased signal is electrically connected. The fingerprint identification device of claim 10, wherein the at least one dedicated inductive signal trace of each electrode region is further connected to the plurality of sensing and bias signals of a portion of the adjacent electrode region. Select the switch group. A fingerprint identification method is applied to a fingerprint identification device. The fingerprint identification device has a plurality of electrode regions, each of which includes at least one dedicated inductive signal trace, a plurality of electrodes, and a plurality of electrode selection switch groups. And a plurality of sensing and biasing signal selection switch groups, each of the electrode selection switch groups respectively corresponding to an electrode, the plurality of electrodes being implanted in a sensing plane in a matrix, the fingerprint identification method comprises: sequentially or Dynamically selecting the switch group and the plurality of sensing and biasing signal selection switch groups through the plurality of electrodes, and simultaneously planning at least three blocks of the plurality of electrodes in each electrode region, wherein each of the at least three blocks is respectively sensed a measurement block, a deflection focus block, and a convergence stable block, wherein each of the deflection focus blocks is composed of electrodes surrounding each of the sensing blocks, and each of the convergence stable blocks is respectively caused by the deflection focus area Forming an electrode around the block; applying a sensing excitation signal to each of the at least one dedicated inductive signal trace of each electrode region Measuring electrodes of the block; respectively applying a biasing focus signal to the electrodes of the deflecting focus block of each electrode region; respectively applying a convergence stabilization signal to the electrodes of the convergence stable block of each electrode region; The at least one dedicated inductive signal trace of the zone respectively outputs an inductive signal to a self-capacitance sensing circuit for fingerprint detection. The fingerprint identification method of claim 18, wherein the sensing excitation signal is an alternating signal. The fingerprint identification method of claim 18, wherein the biased focus signals applied to the respective electrode regions are respectively derived from the sensing signals of the corresponding sensing blocks or the sensing excitation signals are passed through a circuit. The in-phase signal generated. The fingerprint identification method of claim 18, wherein the convergence stable signal applied to each electrode region is derived from the sensing signal of the corresponding sensing block or the sensing excitation signal through a circuit. The inverted signal generated. The fingerprint identification method of claim 18, wherein the biased focus signals applied to the respective electrode regions are commonly derived from the sensing signal or the sensing excitation signal of a selected one of the specific sensing blocks through a circuit. The in-phase signal generated. The fingerprint identification method of claim 18, wherein the convergence stable signal applied to each electrode region is commonly derived from the sensing signal or the sensing excitation signal of a selected one of the specific sensing blocks through a circuit. The inverted signal generated. The fingerprint identification method according to claim 18, wherein the convergence stable signal applied to each electrode region is a current reference potential or a ground signal.