TWI587421B - An apparatus for assembling devices - Google Patents
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- TWI587421B TWI587421B TW105124091A TW105124091A TWI587421B TW I587421 B TWI587421 B TW I587421B TW 105124091 A TW105124091 A TW 105124091A TW 105124091 A TW105124091 A TW 105124091A TW I587421 B TWI587421 B TW I587421B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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Description
本揭露是有關於一種元件選取系統,且特別是有關於一種微型元件選取系統。 The present disclosure relates to a component selection system, and more particularly to a micro component selection system.
隨著電子元件的微型化,針對微型元件的加工、組裝、以及配置工序逐漸複雜,在不同的工序下,又容易產生工法不相容等問題,導致依賴傳統加工法變得困難,製作難度亦相對地增加。 With the miniaturization of electronic components, the processing, assembly, and configuration processes for micro-components are becoming more and more complicated. Under different processes, problems such as incompatibility of engineering methods are easily generated, resulting in difficulties in relying on conventional processing methods, and difficulty in fabrication. Relatively increased.
在批次量產的微型元件中,除了後段製程可能不同的考量,也存在著產品良率的問題,若可對批次量產的微型元件進行挑選,再分別進行加工、組裝等工序,則可在相對較低的成本下獲得複雜的結構,因此,與微型元件相關的組裝與配置技術日益受到重視。 In the batch production of micro-components, in addition to the different considerations of the latter process, there is also the problem of product yield. If the batch-produced micro-components can be selected and processed, assembled, etc., Complex structures can be obtained at relatively low cost, and therefore assembly and configuration techniques related to micro-components are receiving increasing attention.
本揭露提供一種元件選取系統,包括:多個致動元件陣列式設置於一基板上,其中每一該些致動元件包括:一第一電極, 設置於該基板上,且電性連接至該基板;一接墊,設置於該基板上;一電致變形材料層,具有一第一表面與一第二表面,其中該第一表面的一端設置且固定於該第一電極,且該第一表面的另一端設置且固定於該接墊;以及一第二電極,設置於該電致變形材料層的該第二表面,且電性連接至該基板。 The present disclosure provides a component selection system, including: an array of a plurality of actuation elements disposed on a substrate, wherein each of the actuation elements includes: a first electrode, And disposed on the substrate and electrically connected to the substrate; a pad disposed on the substrate; a layer of electro-deformable material having a first surface and a second surface, wherein one end of the first surface is disposed And being fixed to the first electrode, and the other end of the first surface is disposed and fixed to the pad; and a second electrode is disposed on the second surface of the electro-deformable material layer and electrically connected to the Substrate.
本揭露提供一種元件選取系統,包括:一基板,包括多個致動元件陣列式設置於該基板上,其中每一該些致動元件包括:一第一電極,設置於該基板上,且電性連接至該基板;一接墊,設置於該基板上;一電致變形材料層,具有一第一表面與一第二表面,其中該第一表面的一端設置且固定於該第一電極,且該第一表面的另一端設置且固定於該接墊;以及一第二電極,設置於該電致變形材料層的該第二表面,且電性連接至該基板;一氣密結構;以及一隔板,透過該氣密結構相鄰的設置於該基板上,該隔板包括多個貫孔,其中每一該些貫孔的位置分別對應每一該些致動元件的該電致變形材料層;其中該基板、該氣密結構、以及該隔板形成一腔室,且該基板更包括一流道用以連接該腔體的內部與該腔體的外部。 The present disclosure provides a component selection system, comprising: a substrate, comprising a plurality of actuation elements arranged on the substrate in an array, wherein each of the actuation elements comprises: a first electrode disposed on the substrate, and electrically The substrate is connected to the substrate; a pad is disposed on the substrate; a layer of electro-deformable material has a first surface and a second surface, wherein one end of the first surface is disposed and fixed to the first electrode, And the other end of the first surface is disposed and fixed to the pad; and a second electrode is disposed on the second surface of the electro-deformable material layer and electrically connected to the substrate; an airtight structure; a partition plate disposed adjacent to the airtight structure on the substrate, the partition plate comprising a plurality of through holes, wherein each of the through holes is respectively located corresponding to the electro-deformable material of each of the actuating elements a layer; wherein the substrate, the airtight structure, and the spacer form a chamber, and the substrate further includes a first-class channel for connecting the interior of the cavity and the exterior of the cavity.
為讓本揭露的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。 The above described features and advantages of the present invention will be more apparent from the following description.
10‧‧‧基板 10‧‧‧Substrate
20‧‧‧致動元件 20‧‧‧Actuating element
201‧‧‧第一電極 201‧‧‧First electrode
202‧‧‧接墊 202‧‧‧ pads
203‧‧‧電致變形材料層 203‧‧‧Electromorphic material layer
203a‧‧‧第一表面 203a‧‧‧ first surface
203b‧‧‧第二表面 203b‧‧‧ second surface
204‧‧‧第二電極 204‧‧‧second electrode
205‧‧‧介電層 205‧‧‧ dielectric layer
206‧‧‧第三電極 206‧‧‧ third electrode
207‧‧‧基材層 207‧‧‧Substrate layer
208‧‧‧堆疊材料層 208‧‧‧Stacked material layer
30‧‧‧氣密結構 30‧‧‧ airtight structure
40‧‧‧隔板 40‧‧‧Baffle
401‧‧‧貫孔 401‧‧‧through holes
402‧‧‧表面區域 402‧‧‧Surface area
403‧‧‧彈性材料層 403‧‧‧Layer of elastic material
50‧‧‧流道 50‧‧‧ flow path
60‧‧‧元件 60‧‧‧ components
70‧‧‧阻擋結構 70‧‧‧Block structure
圖1A是本揭露一實施例之元件選取系統的剖面圖。 1A is a cross-sectional view of a component selection system in accordance with an embodiment of the present disclosure.
圖1B是本揭露一實施例之元件選取系統的俯視圖。 1B is a top plan view of a component selection system in accordance with an embodiment of the present disclosure.
圖2是圖1A之元件選取系統的A部份放大示意圖。 2 is an enlarged schematic view of a portion A of the component selection system of FIG. 1A.
圖3是圖1A之元件選取系統的A部份放大示意圖。 3 is an enlarged schematic view of a portion A of the component selection system of FIG. 1A.
圖4是圖1A之元件選取系統的A部份放大示意圖。 4 is an enlarged schematic view showing a portion A of the component selection system of FIG. 1A.
圖5A、5B是圖1A之元件選取系統的A部份放大示意圖。 5A and 5B are enlarged views of a portion A of the component selection system of Fig. 1A.
圖6是圖1A之元件選取系統的B部份放大示意圖。 Figure 6 is an enlarged partial view of a portion B of the component selection system of Figure 1A.
圖7A是本揭露另一實施例之元件選取系統的局部剖面圖。 7A is a partial cross-sectional view of a component selection system in accordance with another embodiment of the present disclosure.
圖7B是本揭露另一實施例之元件選取系統的俯視圖。 7B is a top plan view of a component selection system in accordance with another embodiment of the present disclosure.
圖8A是本揭露又一實施例之元件選取系統的局部剖面圖。 FIG. 8A is a partial cross-sectional view of a component selection system according to still another embodiment of the present disclosure.
圖8B是本揭露又一實施例之元件選取系統的俯視圖。 FIG. 8B is a top plan view of a component selection system according to still another embodiment of the present disclosure.
圖9是本揭露又另一實施例之元件選取系統的局部剖面圖。 9 is a partial cross-sectional view of a component selection system in accordance with yet another embodiment of the present disclosure.
圖10是本揭露又另一實施例之元件選取系統的局部剖面圖。 Figure 10 is a partial cross-sectional view of a component selection system in accordance with yet another embodiment of the present disclosure.
圖1A是本揭露一實施例之元件選取系統的剖面圖,圖1B是本揭露一實施例之元件選取系統的俯視圖。請同時參照圖1A與圖1B,元件選取系統包括基板10、多個致動元件20、氣密結構30、以及隔板40。其中,多個致動元件20設置於基板10上,且位於基板10與隔板40之間。隔板40包括多個貫孔401,且隔板40透過氣密結構30與基板10相連接,其中每一個貫孔401分別對應至多個致動元件20。氣密結構位於基板10與隔板40之 間,且位於基板10與隔板40的周圍,使基板10、氣密結構30、以及隔板40形成一腔室。基板10包括流道50,用以連接至外部的真空吸引機。 1A is a cross-sectional view of a component selection system according to an embodiment of the present disclosure, and FIG. 1B is a plan view of a component selection system according to an embodiment of the present disclosure. Referring to FIGS. 1A and 1B simultaneously, the component selection system includes a substrate 10, a plurality of actuation elements 20, a hermetic structure 30, and a spacer 40. The plurality of actuating elements 20 are disposed on the substrate 10 and located between the substrate 10 and the separator 40. The spacer 40 includes a plurality of through holes 401, and the spacers 40 are connected to the substrate 10 through the airtight structure 30, wherein each of the through holes 401 corresponds to the plurality of actuation elements 20, respectively. The airtight structure is located on the substrate 10 and the partition 40 Between the substrate 10 and the separator 40, the substrate 10, the hermetic structure 30, and the separator 40 form a chamber. The substrate 10 includes a flow path 50 for connection to an external vacuum suction machine.
圖2是圖1A之元件選取系統的A部份放大示意圖,繪示單一個致動元件20的結構圖。致動元件20包含第一電極201、接墊202、電致變形材料層203、第二電極204、以及介電層205。第一電極201與接墊202設置於基板10上,且第一電極201電性連接至基板10。電致變形材料層203包含有第一表面203a與第二表面203b,第一表面203a的一端設置且固定於第一電極201上,第二表面203b的另一端設置且固定於接墊202上。第二電極204設置於電致變形材料層203的第二表面203b上,且第二電極204電性連接至基板10。 FIG. 2 is an enlarged schematic view of a portion A of the component selection system of FIG. 1A, showing a structural view of a single actuation element 20. The actuation element 20 includes a first electrode 201, a pad 202, an electro-deformable material layer 203, a second electrode 204, and a dielectric layer 205. The first electrode 201 and the pad 202 are disposed on the substrate 10 , and the first electrode 201 is electrically connected to the substrate 10 . The electro-deformable material layer 203 includes a first surface 203a and a second surface 203b. One end of the first surface 203a is disposed on the first electrode 201, and the other end of the second surface 203b is disposed on the pad 202. The second electrode 204 is disposed on the second surface 203b of the electro-deformable material layer 203, and the second electrode 204 is electrically connected to the substrate 10.
在本實施例中,第一電極201與第二電極204沿同方向設置,且第一電極201與第二電極204之間具有一介電層205。但在不同的實施例中,第一電極201與第二電極204可沿不同方向設置,以使第一電極201與第二電極204電性絕緣,故本揭露不以此為限。 In this embodiment, the first electrode 201 and the second electrode 204 are disposed in the same direction, and a dielectric layer 205 is disposed between the first electrode 201 and the second electrode 204. However, in different embodiments, the first electrode 201 and the second electrode 204 may be disposed in different directions to electrically insulate the first electrode 201 from the second electrode 204. Therefore, the disclosure is not limited thereto.
圖3是圖1A之元件選取系統的A部份放大示意圖,繪示單一個致動元件20在其他實施例中的結構圖。致動元件20包含第一電極201、第三電極206、電致變形材料層203、第二電極204、以及介電層205。第一電極201與第三電極206設置於基板10上,且第一電極201與第三電極206電性連接至基板10。電 致變形材料層203包含有第一表面203a與第二表面203b,第一表面203a的一端設置且固定於第一電極201上,第二表面203b的另一端設置且固定於第三電極206上。第二電極204設置於電致變形材料層203的第二表面203b上,且第二電極204電性連接至基板10。在本實施例中,第一電極201與第三電極206的電位相同,且第一電極201與第二電極204的電位不同。電致變形材料層203的材料例如是納菲薄膜(Nafion)、聚苯胺(polyaniline)、聚砒咯(polypyrrole)、或聚乙炔(polyacetylene),或是其他包含高分子主鏈之鏈段具備有共軛結構(conjugated structure),當適當之摻雜(doping)後,產生具備傳導電荷性質之氧化或還原態(oxidation or reduction),此類典型之導電高分子材料。 3 is an enlarged cross-sectional view of a portion of the component selection system of FIG. 1A, showing a structural view of a single actuation element 20 in other embodiments. The actuation element 20 includes a first electrode 201, a third electrode 206, an electro-deformable material layer 203, a second electrode 204, and a dielectric layer 205. The first electrode 201 and the third electrode 206 are disposed on the substrate 10 , and the first electrode 201 and the third electrode 206 are electrically connected to the substrate 10 . Electricity The deformable material layer 203 includes a first surface 203a and a second surface 203b. One end of the first surface 203a is disposed on the first electrode 201, and the other end of the second surface 203b is disposed on the third electrode 206. The second electrode 204 is disposed on the second surface 203b of the electro-deformable material layer 203, and the second electrode 204 is electrically connected to the substrate 10. In the present embodiment, the potentials of the first electrode 201 and the third electrode 206 are the same, and the potentials of the first electrode 201 and the second electrode 204 are different. The material of the electro-deformable material layer 203 is, for example, a Nafion film, a polyaniline, a polypyrrole, or a polyacetylene, or other segments including a polymer main chain. A conjugated structure, when properly doped, produces an oxidation or reduction of a conductive charge, such a typical conductive polymer material.
在本實施例中,第一電極201與第二電極204沿同方向設置,且第一電極201與第二電極204之間具有一介電層205。但在不同的實施例中,第一電極201與第二電極204可沿不同方向設置,以使第一電極201與第二電極204電性絕緣,故本揭露不以此為限。 In this embodiment, the first electrode 201 and the second electrode 204 are disposed in the same direction, and a dielectric layer 205 is disposed between the first electrode 201 and the second electrode 204. However, in different embodiments, the first electrode 201 and the second electrode 204 may be disposed in different directions to electrically insulate the first electrode 201 from the second electrode 204. Therefore, the disclosure is not limited thereto.
圖4是圖1A之元件選取系統的A部份放大示意圖,繪示單一個致動元件20被施加電壓時的結構圖。致動元件20包含第一電極201、接墊202、電致變形材料層203、第二電極204、以及介電層205。第一電極201與接墊202設置於基板10上,且第一電極201電性連接至基板10。電致變形材料層203包含有第一表面203a與第二表面203b,第一表面203a的一端設置且固定 於第一電極201上,第二表面203b的另一端設置且固定於接墊202上。第二電極204設置於電致變形材料層203的第二表面203b上,且第二電極204電性連接至基板10。 4 is an enlarged cross-sectional view showing a portion of the component selection system of FIG. 1A, showing a structural diagram when a single actuator element 20 is applied with a voltage. The actuation element 20 includes a first electrode 201, a pad 202, an electro-deformable material layer 203, a second electrode 204, and a dielectric layer 205. The first electrode 201 and the pad 202 are disposed on the substrate 10 , and the first electrode 201 is electrically connected to the substrate 10 . The electro-deformable material layer 203 includes a first surface 203a and a second surface 203b, and one end of the first surface 203a is disposed and fixed On the first electrode 201, the other end of the second surface 203b is disposed and fixed on the pad 202. The second electrode 204 is disposed on the second surface 203b of the electro-deformable material layer 203, and the second electrode 204 is electrically connected to the substrate 10.
當第一電極201提供一第一電壓至電致變形材料層203的第一表面203a,且第二電極204提供一第二電壓至電致變形材料層203的第二表面203b時,由於電致變形材料層203的第一表面203a與第二表面203b具有一電壓差,因此電致變形材料層203發生形變,並彎曲突起於基板10。在本實施例中,電致變形材料層203的材料為納菲薄膜(Nafion),第一電壓小於第二電壓,以使電致變形材料層203被施加電壓時發生形變並彎曲突起於基板10,但本揭露不以此為限。在其他實施例中,電致變形材料層203也可採用其他包含高分子主鏈之鏈段具備有共軛結構(conjugated structure),當適當之摻雜(doping)後,產生具備傳導電荷性質之氧化或還原態(oxidation or reduction),此類典型之導電高分子材料,第一電壓與第二電壓的大小關係則依據材料的不同而改變。 When the first electrode 201 provides a first voltage to the first surface 203a of the electro-deformable material layer 203, and the second electrode 204 provides a second voltage to the second surface 203b of the electro-deformable material layer 203, The first surface 203a of the deformed material layer 203 and the second surface 203b have a voltage difference, and thus the electro-deformable material layer 203 is deformed and bent to protrude from the substrate 10. In this embodiment, the material of the electro-deformable material layer 203 is a Nafion film, and the first voltage is less than the second voltage, so that the electro-deformable material layer 203 is deformed when a voltage is applied and is bent and protruded on the substrate 10 . However, this disclosure is not limited to this. In other embodiments, the electro-deformable material layer 203 may also adopt other conjugated structures including the polymer main chain, and when doped, it has a conductive charge property. Oxidation or reduction, the typical conductive polymer material, the relationship between the first voltage and the second voltage varies depending on the material.
值得注意的是,雖在本實施例中,電致變形材料層203為單一材料層,但本揭露並不以此為限。在其他實施例中,電致變形材料層也可搭配單一個或複數個其他材料層堆疊,以組成一堆疊材料層。例如,如圖5A所示,以電致變形材料層203搭配一基材層207組成一堆疊材料層208,當電致變形材料層203受外加電壓而體積膨脹時,由於基材層207不受外加電壓影響,故堆疊材料層208朝著電致變形材料層203的一側彎曲。例如,如圖 5B所示,當電致變形材料層203受外加電壓而體積收縮時,由於基材層207不受外加電壓影響,故堆疊材料層208朝著基材層207的一側彎曲。 It should be noted that, in the present embodiment, the electro-deformable material layer 203 is a single material layer, but the disclosure is not limited thereto. In other embodiments, the layer of electrodeformable material may also be stacked with a single layer or a plurality of other layers of materials to form a layer of stacked material. For example, as shown in FIG. 5A, a layer 208 of a stack of material is formed with a layer 207 of electro-deformable material and a substrate layer 207. When the layer of electro-deformable material 203 is expanded by an applied voltage, the substrate layer 207 is not The applied voltage is affected, so that the stacked material layer 208 is bent toward one side of the electro-deformable material layer 203. For example, as shown As shown in FIG. 5B, when the electro-deformable material layer 203 is subjected to an applied voltage and the volume is contracted, since the base material layer 207 is not affected by the applied voltage, the stacked material layer 208 is bent toward one side of the base material layer 207.
圖6是圖1A之元件選取系統的B部份放大示意圖。元件選取系統包括基板10、致動元件20、氣密結構30、以及隔板40。致動元件20設置於基板10上,且位於基板10與隔板40之間。隔板40包括貫孔401,且隔板40透過氣密結構30與基板10相連接,其中,貫孔401分別對應至致動元件20的位置。基板10、氣密結構30、以及隔板40形成一腔室。基板10包括流道50,用以連接至外部的真空吸引機。 Figure 6 is an enlarged partial view of a portion B of the component selection system of Figure 1A. The component selection system includes a substrate 10, an actuation element 20, a hermetic structure 30, and a spacer 40. The actuating element 20 is disposed on the substrate 10 and between the substrate 10 and the spacer 40. The partition 40 includes a through hole 401, and the partition 40 is connected to the substrate 10 through the airtight structure 30, wherein the through hole 401 corresponds to the position of the actuating member 20, respectively. The substrate 10, the hermetic structure 30, and the separator 40 form a chamber. The substrate 10 includes a flow path 50 for connection to an external vacuum suction machine.
當外部的真空吸引機作用時,貫孔401會產生吸力,使得元件60被吸附至貫孔401上。在本實施例中,基板10更包含多個開關元件,分別連接至每一個致動元件20的第一電極201或第二電極204,以啟動所選擇的致動元件20。每一個致動元件20的第一電極201例如是並聯的設置於基板10上,每一個致動元件20的第二電極204例如是並聯的設置於基板10上。被啟動的致動元件20之電致變形材料層203產生形變,並阻擋住對應的貫孔401,而未被啟動的致動元件20則不產生形變,使得對應未被啟動的致動元件20的貫孔401得以吸取元件60,進而達成元件選取的功能。 When the external vacuum suction machine acts, the through hole 401 generates suction so that the element 60 is adsorbed onto the through hole 401. In the present embodiment, the substrate 10 further includes a plurality of switching elements respectively connected to the first electrode 201 or the second electrode 204 of each of the actuating elements 20 to activate the selected actuating element 20. The first electrodes 201 of each of the actuating elements 20 are, for example, disposed in parallel on the substrate 10, and the second electrodes 204 of each of the actuating elements 20 are disposed, for example, in parallel on the substrate 10. The layer of electro-deformable material 203 of the actuated element 20 that is activated is deformed and blocks the corresponding through-hole 401, while the actuating element 20 that is not activated is not deformed such that the actuating element 20 is not activated. The through hole 401 is capable of sucking the component 60, thereby achieving the function of component selection.
圖7A是本揭露另一實施例之元件選取系統的局部剖面圖,圖6B是本揭露另一實施例之元件選取系統的俯視圖。請 同時參照圖7A與圖7B,元件選取系統包括基板10、致動元件20、氣密結構30、隔板40、以及阻擋結構70。致動元件20設置於基板10上,且位於基板10與隔板40之間。隔板40包括貫孔401,且隔板40透過氣密結構30與基板10相連接,其中,貫孔401分別對應至致動元件20的位置。基板10、氣密結構30、以及隔板40形成一腔室。基板10包括流道50,用以連接至外部的真空吸引機。阻擋結構70間隔的設置在腔室中,且分別連接基板10與隔板40,以強化腔室的結構,確保在外部的真空吸引機作動時,基板10與隔板40之間的距離。阻擋結構70例如是陣列式的設置在腔室中,但本揭露不以此為限。 7A is a partial cross-sectional view of a component selection system according to another embodiment of the present disclosure, and FIG. 6B is a top plan view of a component selection system according to another embodiment of the present disclosure. please 7A and 7B, the component selection system includes a substrate 10, an actuation element 20, a hermetic structure 30, a spacer 40, and a barrier structure 70. The actuating element 20 is disposed on the substrate 10 and between the substrate 10 and the spacer 40. The partition 40 includes a through hole 401, and the partition 40 is connected to the substrate 10 through the airtight structure 30, wherein the through hole 401 corresponds to the position of the actuating member 20, respectively. The substrate 10, the hermetic structure 30, and the separator 40 form a chamber. The substrate 10 includes a flow path 50 for connection to an external vacuum suction machine. The barrier structures 70 are spaced apart in the chamber and are connected to the substrate 10 and the spacers 40, respectively, to strengthen the structure of the chamber to ensure the distance between the substrate 10 and the spacer 40 when the external vacuum suction machine is actuated. The blocking structure 70 is, for example, arranged in an array in the chamber, but the disclosure is not limited thereto.
圖8A是本揭露又一實施例之元件選取系統的局部剖面圖,圖8B是本揭露又一實施例之元件選取系統的俯視圖。請同時參照圖8A與圖8B,元件選取系統包括基板10、致動元件20、氣密結構30、隔板40、以及阻擋結構70。致動元件20設置於基板10上,且位於基板10與隔板40之間。隔板40包括貫孔401,且隔板40透過氣密結構30與基板10相連接,其中,貫孔401分別對應至致動元件20的位置。基板10、氣密結構30、以及隔板40形成一腔室。基板10包括流道50,用以連接至外部的真空吸引機。阻擋結構70設置在氣密結構30中,且分別連接基板10與隔板40,以強化腔室的結構,確保在外部的真空吸引機作動時,基板10與隔板40之間的距離。 8A is a partial cross-sectional view of a component selection system according to still another embodiment of the present disclosure, and FIG. 8B is a top plan view of a component selection system according to still another embodiment of the present disclosure. Referring to FIGS. 8A and 8B simultaneously, the component selection system includes a substrate 10, an actuation element 20, a hermetic structure 30, a spacer 40, and a barrier structure 70. The actuating element 20 is disposed on the substrate 10 and between the substrate 10 and the spacer 40. The partition 40 includes a through hole 401, and the partition 40 is connected to the substrate 10 through the airtight structure 30, wherein the through hole 401 corresponds to the position of the actuating member 20, respectively. The substrate 10, the hermetic structure 30, and the separator 40 form a chamber. The substrate 10 includes a flow path 50 for connection to an external vacuum suction machine. The barrier structure 70 is disposed in the airtight structure 30 and connects the substrate 10 and the spacer 40, respectively, to strengthen the structure of the chamber to ensure the distance between the substrate 10 and the spacer 40 when the external vacuum suction machine is actuated.
圖9是本揭露又另一實施例之元件選取系統的局部 剖面圖。元件選取系統包括基板10、致動元件20、氣密結構30、以及隔板40。致動元件20設置於基板10上,且位於基板10與隔板40之間。隔板40包括貫孔401,且隔板40透過氣密結構30與基板10相連接,其中,貫孔401分別對應至致動元件20的位置。基板10、氣密結構30、以及隔板40形成一腔室。基板10包括流道50,用以連接至外部的真空吸引機。在本實施例中,隔板40在腔室的外側包括不同高度的表面區域402,用以強化本實施例的元件選取系統對於不同厚度的元件的選取能力。 9 is a partial view of a component selection system according to still another embodiment of the present disclosure. Sectional view. The component selection system includes a substrate 10, an actuation element 20, a hermetic structure 30, and a spacer 40. The actuating element 20 is disposed on the substrate 10 and between the substrate 10 and the spacer 40. The partition 40 includes a through hole 401, and the partition 40 is connected to the substrate 10 through the airtight structure 30, wherein the through hole 401 corresponds to the position of the actuating member 20, respectively. The substrate 10, the hermetic structure 30, and the separator 40 form a chamber. The substrate 10 includes a flow path 50 for connection to an external vacuum suction machine. In the present embodiment, the spacer 40 includes surface regions 402 of different heights on the outside of the chamber for enhancing the ability of the component selection system of the present embodiment to select components of different thicknesses.
圖10是本揭露又另一實施例之元件選取系統的局部剖面圖。元件選取系統包括基板10、致動元件20、氣密結構30、以及隔板40。致動元件20設置於基板10上,且位於基板10與隔板40之間。隔板40包括貫孔401,且隔板40透過氣密結構30與基板10相連接,其中,貫孔401分別對應至致動元件20的位置。基板10、氣密結構30、以及隔板40形成一腔室。基板10包括流道50,用以連接至外部的真空吸引機。在本實施例中,隔板40包括彈性材料層403,彈性材料層403設置在腔室外側的隔板40表面上,當同時欲選取的元件厚度不同時,彈性材料層403可產生形變以有效的對應不同厚度或材質之元件,使不同厚度或材質的元件被元件選取系統所吸附。 Figure 10 is a partial cross-sectional view of a component selection system in accordance with yet another embodiment of the present disclosure. The component selection system includes a substrate 10, an actuation element 20, a hermetic structure 30, and a spacer 40. The actuating element 20 is disposed on the substrate 10 and between the substrate 10 and the spacer 40. The partition 40 includes a through hole 401, and the partition 40 is connected to the substrate 10 through the airtight structure 30, wherein the through hole 401 corresponds to the position of the actuating member 20, respectively. The substrate 10, the hermetic structure 30, and the separator 40 form a chamber. The substrate 10 includes a flow path 50 for connection to an external vacuum suction machine. In the present embodiment, the spacer 40 includes an elastic material layer 403 disposed on the surface of the spacer 40 on the outdoor side of the chamber. When the thickness of the component to be selected is different at the same time, the elastic material layer 403 can be deformed to be effective. For components of different thicknesses or materials, components of different thicknesses or materials are adsorbed by the component selection system.
綜上所述,本揭露的元件選取系統可依據需求,選取一個或同時選取指定的多個元件,達成快速化組裝的功效,在應用至批次量產的製作程序時,可有效的選取所需的元件進行不 同的後續製作程序,以實現快速量產性的元件封裝。 In summary, the component selection system of the present disclosure can select one or at the same time to select a plurality of components according to requirements, thereby achieving the effect of rapid assembly, and can effectively select the application when applied to the batch production process. The required components are not The same follow-up production process to achieve fast mass production component packaging.
雖然本揭露已以實施例揭露如上,然其並非用以限定本揭露,任何所屬技術領域中具有通常知識者,在不脫離本揭露的精神和範圍內,當可作些許的更動與潤飾,故本揭露的保護範圍當視後附的申請專利範圍所界定者為準。 The present disclosure has been disclosed in the above embodiments, but it is not intended to limit the disclosure, and any person skilled in the art can make some changes and refinements without departing from the spirit and scope of the disclosure. The scope of protection of this disclosure is subject to the definition of the scope of the appended claims.
10‧‧‧基板 10‧‧‧Substrate
20‧‧‧致動元件 20‧‧‧Actuating element
201‧‧‧第一電極 201‧‧‧First electrode
202‧‧‧接墊 202‧‧‧ pads
203‧‧‧電致變形材料層 203‧‧‧Electromorphic material layer
203a‧‧‧第一表面 203a‧‧‧ first surface
203b‧‧‧第二表面 203b‧‧‧ second surface
204‧‧‧第二電極 204‧‧‧second electrode
205‧‧‧介電層 205‧‧‧ dielectric layer
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