TWI587373B - Ion implanter and method for ion implantation - Google Patents

Description

Ion implanter and ion implant

The present invention relates to an ion implanter and ion implantation, and more particularly to an ion beam using a relative rotation between an aperture device and a workpiece. (ion beam) one or more doped regions on a workpiece by an aperture on a single opening device or a combined aperture combined by openings respectively located in a plurality of opening devices (one or More doseregions) Ion implanters and ion implants for ion implantation.

For a manufacturing process of an integrated circuit (IC), a memory, a flat panel display, and a solar cell, the ion implantation process is one. A very important process, because the accuracy of the ion implantation process can significantly affect the final yield of the above device. Briefly, the ion implantation process uses a relative motion between a charged particle beam such as an ion beam and a wafer to cause a charged particle beam to scan a doped region on the workpiece. To be done.

In recent years, as the size of the workpiece has increased (such as the trend from 12-inch wafers to 18-inch wafers), as process technology requirements have increased (such as the critical dimension of semiconductor components gradually developed to 20 nm or Smaller), when ion implantation is performed on a workpiece, the need for non-uniform ion implantation and split dose is often encountered. The former, for example, says that the difficulty of uniformly depositing a film on the workpiece increases due to the larger working size, and the deposition process is often a film having an uneven thickness, which can be correspondingly Non-uniform ion implantation of the uneven thickness film is performed so that different thickness portions have different doping amounts, and in the subsequent etching process, different doping doses can be utilized to correspond to different etching rate characteristics, and the uneven doping amount is transmitted. Distribution to induce uneven etching rate, thereby adjusting the original thickness of the film to a thickness A new layer of film that is even. The latter, for example, in testing various process parameter combinations and/or component pattern designs, it is possible to simultaneously fabricate multiple chips corresponding to various variations on a single workpiece while performing ion implantation procedures. A variety of different doping doses are simultaneously tested.

A common implementation, such as non-uniform ion implantation and partition doping, uses a hard body to cover a portion of the implanted workpiece or a hardware to adjust the ion beam hitting the workpiece. For example, using an opening device such as an open graphite plate, the opening device is placed in the ion beam trajectory and the workpiece before the ion implantation value is applied to a certain specific doping region of the workpiece at a specific doping amount. Between and so that the opening on the opening device just exposes the specific doping region to be ion implanted, the ion beam will only hit these specific doping regions without hitting the workpiece during the ion implantation process. The other part on it.

Then, due to the use of the opening device, the ion beam assembly for providing the ion beam must be repeatedly performed before ion implantation of the next different doped region of the workpiece. Assembly) or removing the ion beam from the vacuum chamber, opening the closed vacuum chamber to replace the opening device, closing the vacuum chamber, restarting the ion beam assembly or moving the ion beam into the vacuum chamber, recalibrating the ion beam, etc. The ion implantation of the next doped region of the workpiece can then be performed. Therefore, when a plurality of opening devices are required to separately process a plurality of doped regions on one or more workpieces, the time, hardware cost, and operational complexity of the entire ion fabric process will increase significantly. Therefore, there is an urgent need to provide new ion implanters and ion implantation methods.

In order to solve the above problems, the present invention provides an ion implanter and an ion implantation method, which can utilize the size and shape corresponding to the doped region before ion implantation of the doped region of the workpiece by the ion beam. A single opening or combination opening cooperates with the relative rotation between the opening and the workpiece to adjust the ion beam. The relative rotation may be an autologous rotation in which the workpiece to be implanted overlaps with the axis of the opening device having the opening, or may be such that the workpiece to be implanted and the axis of the opening device are separated from each other. Due to the relative rotation between the workpiece and the opening device, the same opening of the same workpiece can be used to implant different doped regions on the workpiece with different rotational amplitudes of relative rotation. Since a plurality of opening devices can be differently overlapped to have a plurality of openings overlapping to form different combined openings, since a plurality of opening devices and workpieces can pass through different The relative rotation mode is such that the combined openings formed by the electrodes allow the different doped regions on the workpiece to be ion implanted. Therefore, by relatively rotating the workpiece and the opening device, the workpiece can be used on only a few opening devices. Most types of doped regions are ion implanted without the need to prepare and use how many openings (or how many openings are prepared and used) as to how many doped regions are present on the workpiece as is conventional.

The invention provides an ion implanter comprising a vacuum chamber, an ion beam assembly, an opening device and a driving device. The ion beam assembly is used to provide an ion beam toward a workpiece located within the vacuum chamber. Generally, the ion beam assembly includes an ion source, an analysis magnet, an acceleration/deceleration electrode for adjusting the energy of the ion beam, and a direction and a transverse direction for adjusting the ion beam. A magnet of a cross-sectional shape (such as a collimator magnet). When the features of the present invention are to be emphasized, the workpiece to be processed by the ion implanter has a plurality of doped regions. The opening device is disposed in the vacuum chamber and located on the transmission path of the ion beam, and has at least one opening. The driving device is configured to drive at least one of the opening device and the workpiece to rotate, wherein the relative rotation between the opening device and the workpiece is used to achieve at least one of the following: the opening is just exposed to one of the doped regions, so that At least a portion of the ion beam is ion implanted through the opening to expose the doped regions: and the openings are sequentially exposed to different ones of the doped regions.

In an embodiment of the ion implanter of the present invention, the opening means is made of a graphite material such as a graphite plate having at least one opening.

In an embodiment of the ion implanter of the present invention, wherein the axis of the opening device is offset from the axis of the workpiece; or the axis of the opening device coincides with the axis of the workpiece.

In an embodiment of the ion implanter of the present invention, wherein the different doped regions each have a desired ion cloth concentration.

In one embodiment of the ion implanter of the present invention, the number of openings is a plurality, and the size, shape, and relative position of the different openings correspond to the size, shape, and relative position of the different doped regions.

The present invention provides an ion implantation method. First, a workpiece is provided having a plurality of first doped regions. Next, an opening means is provided on the side of the workpiece having the first doped regions, wherein the opening means has at least one first opening. Then, the opening device and the workpiece are relatively rotated, The first opening is just exposed to one of the first doped regions. Next, an ion beam is provided on a side of the opening device remote from the workpiece such that at least a portion of the ion beam passes through the first opening to ion implant the exposed first doped region. Wherein, after the last step is performed, the last two steps may be repeated in sequence until the ion beam is ion implanted on all of the first doped regions.

In an embodiment of the ion implantation method of the present invention, the opening means is made of graphite.

In an ion implantation embodiment of the invention, wherein the different doped regions each have a desired ion cloth concentration.

In an ion implantation embodiment of the present invention, when the axis of the opening device is offset from the axis of the workpiece, the workpiece is more different in size and shape than at least one of the first doped regions. At least one second doped region, and when the opening device further has at least one second opening, after performing the last step (d), the relative rotation of the opening device and the workpiece may be sequentially performed to make the first The second opening just exposes the second doped region and provides an ion beam on a side of the opening device remote from the workpiece such that at least a portion of the ion beam passes through the second opening to ion implant the second doped region.

In an embodiment of the ion implantation method of the present invention, the opening device and the workpiece are sequentially rotated to cause the second opening to directly expose the second doped region, and the first opening may be rotated to In addition to the workpiece, either the first doped regions are covered or the first opening is exposed to one of the first doped regions.

In an ion implantation embodiment of the present invention, the opening device provides an ion beam away from a side of the workpiece to cause at least a portion of the ion beam to pass through the second opening to ion implant the second doped region, Further comprising, and causing at least a portion of the ion beam to pass through the first opening to ion implant the exposed first doped region.

In an ion implantation embodiment of the invention, wherein at least one of the first doped regions and the second doped region respectively have a desired ion cloth concentration.

In an embodiment of the ion implantation method of the present invention, when the number of the second doped regions is plural, after processing a certain second doped region, the processing may be repeated again. The step of doping the regions until the ion beam is ion implanted on the second doped regions.

In an ion implantation embodiment of the invention, wherein the different second doped regions each have a desired ion cloth concentration.

In an ion implantation embodiment of the present invention, when the axis of the opening device coincides with the axis of the workpiece, when the workpiece further has at least one of the size and shape at least one of the first doped regions a second doping region, wherein the opening device further has at least one second opening, and a relative position between one of the first doping regions and the second doping region corresponds to between the first opening and the second opening In the relative position, the second doped region is further included and the second doped region is exposed to the second doped region, and the second doped region is ion implanted through at least a portion of the ion beam.

In an ion implantation embodiment of the invention, wherein at least one of the first doped regions and the second doped region respectively have a desired ion cloth concentration.

In an embodiment of the ion implantation method of the present invention, the number of the second doped regions is plural, and after processing a second doped region, further comprising the step of repeatedly processing the second doped region, Until the ion beam is ion implanted on all of the first doped regions and the second doped regions.

In an ion implantation embodiment of the invention, the different second doped regions each have a desired ion cloth concentration.

The present invention also provides an ion implanter comprising a vacuum chamber, an ion beam assembly for providing an ion beam toward a workpiece having a first doped region within the vacuum chamber, a chamber disposed within the vacuum chamber, and an ion beam a first opening device on the transfer path and having a first opening, a second opening device disposed between the first opening device and the workpiece and having a second opening. Wherein the first opening and the second opening at least partially overlap to form a first combined opening that exposes the first doped region, and at least a portion of the ion beam passes through the first combined opening to ion cloth the first doped region plant.

In an embodiment of the ion implanter of the present invention, the driving device is further configured to drive the first opening device to rotate relative to the workpiece, or to drive the second opening device to rotate relative to the workpiece, or to drive the workpiece around the workpiece. The axis of the rotation.

In an embodiment of the ion implanter of the present invention, at least one of the first opening means and the second opening means is made of graphite.

In an embodiment of the ion implanter of the present invention, when the workpiece further has at least one second doped region, the driving device can drive at least one of the first opening device, the second opening device and the workpiece to rotate again, so that The first opening and the second opening at least partially overlap to form a second combined opening that just exposes the second doped region, and at least a portion of the ion beam is ion implanted through the second combined opening.

In the above embodiment of an ion implanter of the present invention, the first doped region and the second doped region each have a desired ion cloth value concentration.

In an embodiment of the ion implanter of the present invention, wherein an axis of at least one of the first opening means and the second opening means is offset from the axis of the workpiece or the axis of the first opening means and the second opening means The heart coincides with the axis of the workpiece.

The invention also provides an ion implantation method. First, it includes providing a workpiece having at least one first doped region. Then, a first opening means is provided on a side of the workpiece having the first doped region, wherein the first opening means has a first opening. Next, a second opening device is provided between the workpiece and the first opening device, wherein the second opening device has a second opening. Next, the first opening means and the second opening means are respectively rotated relative to the workpiece such that the first opening and the second opening at least partially overlap to form a first combined opening that just exposes the first doped region. Finally, a first ion beam is provided on a side of the first opening device remote from the workpiece such that at least a portion of the first ion beam passes through the first combined opening and the first doped region is ion implanted.

In an ion implantation embodiment of the invention, at least one of the first opening means and the second opening means is made of graphite.

In an embodiment of the ion implantation method of the present invention, when the number of the first doped regions is plural, after the ion implantation of a certain first doped region, the workpiece can be driven around the workpiece. Rotating the axis such that the first combined opening just exposes the other of the first doped regions, and then providing the ion beam such that at least a portion of the first ion beam passes through the first combined opening Another first doped region is ion implanted; and the foregoing steps are repeated until the first ion beam is ion implanted for all of the first doped regions.

In the above embodiments of a certain ion implantation method of the present invention, the first doped regions each have a desired ion cloth concentration.

In an embodiment of the ion implantation method of the present invention, the method further includes driving the workpiece to rotate about the axis of the workpiece.

In an ion implantation embodiment of the present invention, when the workpiece further has at least one second doped region, after processing a certain first doped region, the first opening device and the second device may be further The opening means are each rotated relative to the workpiece such that the first opening and the second opening at least partially overlap to form a second combined opening that just exposes the second doped region. A second ion beam is then provided on a side of the first opening device remote from the workpiece such that at least a portion of the second ion beam ion implants the second doped region through the second combined opening.

In an embodiment of the ion implantation method of the present invention, the method further comprises at least one of: stopping ion implantation with the first ion beam before processing any of the second doped regions: second doping in any step of processing a region covering the first doped region; and the first ion beam and the second ion beam having different ion beam parameters, wherein the ion beam parameters include an ion beam size, a total current amount, a cross-sectional shape, and a cross-section The beam current distribution is at least one of them.

In the above embodiment of a certain ion implantation method of the present invention, the first doped region and the second doped region respectively have a desired ion cloth value concentration.

In an embodiment of the ion implantation method of the present invention, when the number of the second doped regions is plural, after the above process is performed, the workpiece may be driven to rotate around the axis of the workpiece to make the second combination. The opening just exposes the other of the second doped regions, and then provides a second ion beam such that at least a portion of the second ion beam passes through the second combined opening to ion implant the exposed second doped region And repeating the step of processing the second doped region until the second ion beam is ion implanted for all of the second doped regions.

In the above embodiment of a certain ion implantation method of the present invention, these second doped regions each have a desired ion cloth concentration.

In an embodiment of the ion implantation method of the present invention, the step of processing the second doped region further comprises driving the workpiece to rotate about the axis of the workpiece.

In an ion implantation embodiment of the present invention, wherein the axis of at least one of the axis of the first opening device and the second opening device is offset from the axis of the workpiece or the axis of the first opening device and the second The axes of the opening devices coincide with the axis of the workpiece.

Based on the above, the present invention utilizes the relative rotation between the opening device and the workpiece such that a single opening device or a plurality of opening devices can expose all of the doped regions on the workpiece via the arrangement of the openings thereof, thus the present invention A small number of open devices can be readily used to ion implant one or more doped regions of a particular size, shape and location.

The above described features and advantages of the invention will be apparent from the following description.

100‧‧‧Ion implanter

102, 104‧‧‧ combination opening

110‧‧‧vacuum chamber

120‧‧‧Ion beam assembly

122‧‧‧Ion Beam

130, 140‧‧‧opening device

132, 134, 142, 144‧‧

150‧‧‧Clamp

152‧‧‧ drive

200‧‧‧Workpiece

210, 220‧‧‧Doped areas

210a, 210b, 210c, 210d, 220a, 220b, 220c, 220d‧‧‧ sub-doped regions

300‧‧‧ arrow

S100~S130, S200~S230, S300~S350, S400~S450, S500~S560, S600~S660‧‧‧

1A and 1B are schematic views showing the structure of an ion implanter according to an embodiment of the present invention.

2 is a left side view of an opening device in accordance with one embodiment of the present invention.

3 depicts a left side view of a workpiece in accordance with one embodiment of the present invention.

4A-4D are schematic views showing the operation of performing the ion cloth value of the workpiece illustrated in FIG. 3 using the opening device illustrated in FIG. 2.

Figure 5 depicts a left side view of an opening device in accordance with another embodiment of the present invention.

Figure 6 depicts a left side view of a workpiece in accordance with another embodiment of the present invention.

7A through 7C are schematic views showing the operation of performing the ion cloth value of the workpiece illustrated in Fig. 6 using the opening device illustrated in Fig. 5.

Figure 8 depicts a left side view of an opening device in accordance with another embodiment of the present invention.

Figure 9 depicts a left side view of a workpiece in accordance with another embodiment of the present invention.

10A through 10D are schematic views showing the operation of performing the ion cloth value of the workpiece illustrated in Fig. 9 using the opening device illustrated in Fig. 8.

11A to 11F are respectively schematic views showing the structure of a graphite plate according to an embodiment of the present invention.

Figure 12 is a left side elevational view of an opening device in accordance with another embodiment of the present invention.

Figure 13 depicts a left side view of a workpiece in accordance with another embodiment of the present invention.

14A-14B are schematic views showing the operation of performing the ion cloth value of the workpiece illustrated in FIG. 13 using the opening device illustrated in FIG.

15A to 15C are block diagrams respectively showing an ion implantation method according to an embodiment of the present invention.

16A and 16B are respectively left side views of an opening device according to another embodiment of the present invention.

Figure 17 depicts a left side view of a workpiece in accordance with another embodiment of the present invention.

18A to 18B are schematic views showing the operation of performing the ion cloth value of the workpiece illustrated in Fig. 17 using the opening device illustrated in Figs. 16A and 16B.

19A and 19B are respectively left side views of an opening device according to another embodiment of the present invention.

Figure 20 depicts a left side view of a workpiece in accordance with another embodiment of the present invention.

21A-21B are schematic views showing the operation of performing the ion cloth value of the workpiece illustrated in FIG. 20 using the opening device illustrated in FIGS. 19A and 19B.

22A to 22D are block diagrams respectively showing an ion implantation method according to an embodiment of the present invention.

1A and 1B are schematic views showing the structure of an ion implanter according to an embodiment of the present invention. Furthermore, FIG. 2, FIG. 5, FIG. 8 and FIG. 12 respectively illustrate a left side view of an opening device according to an embodiment of the present invention, and FIGS. 3, 6, 9, and 13 respectively illustrate the present invention. A left side view of a workpiece of one embodiment. In addition, FIG. 4A to FIG. 4D illustrate a schematic diagram of an operation of performing an ion cloth value on the workpiece illustrated in FIG. 3 by using the opening device illustrated in FIG. 2, and FIGS. 7A to 7C illustrate an operation diagram. FIG. 10A to FIG. 10D illustrate the operation of the opening device illustrated in FIG. 5 for performing the ion cloth value on the workpiece illustrated in FIG. 6, and FIGS. 10A to 10D illustrate the use of the opening device illustrated in FIG. The operation diagram of the workpiece depicted in FIG. 9 is performed on the ion cloth value, and FIGS. 14A to 14B illustrate the use of the opening device illustrated in FIG. 12 to ionize the workpiece illustrated in FIG. cloth A schematic diagram of the operation of the value. In addition, FIG. 11A to FIG. 11F respectively illustrate structural diagrams of a graphite plate according to an embodiment of the present invention. In the following embodiments, the same component symbols are used in the different embodiments to refer to the same or similar components. Moreover, the directions of up, down, left, right, clockwise, counterclockwise, and the like described in the respective embodiments are based on the orientations depicted in the corresponding drawings.

Referring first to FIGS. 1A and 1B, the ion implanter 100 disclosed in this embodiment includes a vacuum chamber 110, an ion beam assembly 120, and at least one opening device 130 (this embodiment is only schematically illustrated Draw one). In this embodiment, the ion beam assembly 120 is used to provide an ion beam 122 toward a workpiece 200 that is held within the vacuum chamber 110, such as by a chuck 150 of the ion implanter 100. In general, the ion beam assembly 120 includes an ion source, an analysis magnet, an acceleration and deceleration electrode for adjusting the energy of the ion beam, and a magnet (such as a collimating magnet) for adjusting the shape and cross-sectional shape of the ion beam. Since the present invention utilizes only the ion beam assembly 120 to provide the ion beam 122, the present invention is not at all limited by the details or variations of the ion beam assembly 120. In this embodiment, the opening device 130 may be any hard structure having an aperture, such as a flat plate made of graphite and having one or more openings, and disposed in the vacuum chamber 110 and ions. A transmission path of the beam 122. The jig 150 is, for example, an electrostatic chuck (ESC). The present invention is applicable to process workpieces 200 having a plurality of mutually doped plurality of doped regions 210 (this embodiment is only schematically illustrated in two), and these doped regions 210 have the same specific size and shape. Furthermore, the ion beam 122 is, for example, a ribbon ion beam, and the opening device 130 has at least one opening 132 (this embodiment only schematically shows one), and the opening 132 has a size and shape corresponding to The size and shape of the doped regions 210 and 220. However, in other embodiments, the ion beam 122 can also be a spot beam. In addition, the relative rotation between the opening device 130 and the workpiece 200 may cause the opening 132 to sequentially expose the doped region 210 or 220 such that at least a portion of the ion beam 122 may pass through the opening 132 to the doped region 210. Or 220 for ion implantation. That is, from another perspective, it can be considered that the size and shape of the opening 132 corresponds to a portion of all areas of the workpiece 200 that need to be doped, and the relative rotation between the opening device 130 and the workpiece 200 can be The opening 132 sequentially exposes all areas of the workpiece 200 that need to be doped.

For example, the doped regions 210 and 220 may be any shape such as a sector, an arc, a circle, an ellipse, a rectangle, a square, and the like having the same size and shape, and between the two and the axis of the workpiece 200. The relative position and orientation are the same. At this time, the appropriate opening device 130 can be disposed on the transmission path of the ion beam 122 according to the size and shape of the doped regions 210 and 220 and their relative positions with the axis, respectively, and the opening 132 is just right. The doped region 210 is exposed. As a result, when the workpiece 200 is ion implanted by the ion beam 122, only at least a portion of the ion beam 122 can ion implant the doped region 210 through the opening 132, and the ion beam 122 is substantially not The doped region 220 and other undoped regions are bombarded. Then, the opening device 130 is exposed to the doping region 220 by rotating at least one of the opening device 130 and the workpiece 200, that is, the ionizing values of the plurality of doping regions 210 and 220 may be performed by the single opening device 130.

The above embodiment is exemplified by a single opening device 130, two doped regions 210/220 and one relative rotation. However, since the phase rotation can also be performed two or more times, the associated hardware is not limited to the number of relative rotations, so the single opening device 130 can also correspond to three or more dopings on the workpiece 200, respectively. region. In other words, ion implantation of a plurality of doped regions can be performed on the workpiece 200 by using a single opening device 130 without using an opening device for each doped region. Obviously, the ion implanter provided by the present invention can effectively reduce the time and complexity of the overall ion implantation process by reducing the number of replacements of the opening device compared to conventional ion implanters.

Further, when the doped region has an irregular shape, or the doped region has a different shape or size between the opening of the existing opening device, it is conceivable to divide the entire doped region according to the opening shape and size of the existing opening device. A plurality of sub-doped regions. In this way, the workpiece can be ion-distributed in a doped manner by using a single or a plurality of opening devices in the absence of an opening device having openings of the same shape and size.

For example, referring to FIGS. 2 and 3, when the workpiece 200 is an annular doped region 210, the opening 132 can still be used as a 1/4 annular opening device 130. At this time, the doped region 210 which is annular in the workpiece 200 may be divided into four sub-doped regions 210a, 210b which are adjacent to each other and arranged in an annular array around the axis of the workpiece 200, and are 1/4 annular sub-doped regions, 210c and 210d. As such, even if the opening 132 and the doped region 210 have different shapes and sizes, the opening device 130 can be utilized, and the workpiece can be driven by a driving device 152 such as the jig 150 shown in FIGS. 1A and 1B. 200 is oriented about the axis of the workpiece 200 in the direction indicated by the arrow 300 The opening device 130 autologously rotates at a particular angle at least once (this embodiment is schematically illustrated four times, each time rotated 90 degrees), such that the ion beam 122 depicted in Figures 1A and 1B is The ion distribution values of the four sub-doped regions 210a, 210b, 210c, and 210d are sequentially performed as shown in FIGS. 4A to 4D, thereby completing the ion cloth value of the entire doped region 210. In addition, in other embodiments not shown, the specific angle may also be 30 degrees, 36 degrees, 45 degrees, 60 degrees, 120 degrees, 180 degrees, or other angles. The main point of the present invention is only to rotate the workpiece 200 relative to the opening device 130 one or more times without the need to limit the rotational angle of each relative rotation, and it is not necessary to have the same rotation angle for each relative rotation.

In addition, in some specific cases, the workpiece may have a plurality of doped regions, and at least a portion of the doped regions may not have the same doping amount, or There is only a single doped region, but this doped region can be divided into a plurality of sub-doped regions having different desired doping amounts. In this case, it may be necessary to use the same spot ion beam or ribbon ion beam to perform at least two different ion implantations on different doped regions or different sub-doped regions of the workpiece, wherein different ion implantations are performed. Including different ion beam parameters, different scan rates, different scan routes, different scan pitches, different incident angles, etc., where the ion beam parameters include The size of the ion beam, the total current amount, the cross-sectional shape, and the ion beam current distribution in the cross section are at least one of them. Furthermore, the different doped regions may be separated from each other as shown in FIG. 1A and FIG. 1B, or may be adjacent to each other and/or arranged in an array as shown in FIG. 3, and may be partially overlapped.

Based on the above needs, the present invention can further perform partition doping and non-uniform ion implantation in various ways as described below. For example, please refer to FIG. 5 and FIG. 6 first. In this embodiment, the workpiece 200 has a circular doped region 210, and the doped region 210 can be 1:2:3:2 according to it. The desired doping concentration is equally divided into four sub-doped regions 210a, 210b, 210c, and 210d that are the same in size and shape but different in orientation. Furthermore, the opening device 130 in this embodiment has a semi-circular opening 132, and the opening 132 is sized and shaped to expose the sub-doped regions 210a, 210b, 210c and 210d together. Any two neighbors. At this time, the sub-doped regions 210a and 210b may be regarded as the first integral doped region, and the sub-doped regions 210b and 210c may be regarded as the second integral doped region, and the sub-doped region 210c And 210d can be considered as the third whole Doped area of the body. That is to say, there can also be at least partial overlap between the three different doped regions.

In this case, the ion beam is subjected to a first ion cloth value for the sub-doped regions 210a and 210b through the opening 132 as shown in FIG. 7A. Next, the workpiece 200 is further driven to rotate 90 degrees with respect to the opening device 130 in the direction indicated by the arrow 300 in the direction indicated by the arrow 300, so that the ion beam passes through the opening 132 as shown in FIG. 7B. 210b and 210c perform a second ion cloth value that is the same as the first ion cloth value. Then, the workpiece 200 is further driven to rotate 90 degrees with respect to the opening device 130 in the direction indicated by the arrow 300 in the direction indicated by the arrow 300, so that the ion beam is doped by the opening 132 as shown in FIG. 7C. Regions 210b and 210c perform two third ion cloth values that are the same as the first ion cloth value. As such, the sub-doped regions 210a, 210b, 210c, and 210d can have a desired doping concentration of 1:2:3:2. Of course, as long as the ion cloth concentration of the third ion cloth value can be appropriately adjusted, the third ion cloth value can be performed only once, for example, when the ion cloth value concentration of the third ion cloth value is the first ion cloth value and the first The ion cloth value of the diionic cloth value is twice the concentration.

In other embodiments not shown, the workpiece may have more doped regions, and the opening device may have a plurality of openings, and the size, shape and relative position of the different openings correspond to the size and shape of the different doped regions. And relative position. For example, referring to FIG. 8 and FIG. 9, when one of the openings 132 of the opening device 130 has a 1/4 circle shape, and the other opening 134 outside the opening 132 has a 1/4 ring shape, The doped region 210 having a circular shape on the workpiece 200 may be divided into four sub-doped regions 210a, 210b, 210c which are adjacent to each other and arranged in an annular array around the axis of the workpiece 200. And 210d, and dividing the annular doped region 220 into four sub-doped regions 220a, 220b, 220c, and 220d that are adjacent to each other and arranged in an annular array around the axis of the workpiece 200.

In this case, the ion beam is once subjected to the ion doping values of the sub-doped regions 210a and 220a through the openings 132 and 134 as shown in FIG. 10A. Then, the workpiece 200 is further driven to rotate 90 degrees with respect to the opening device 130 in the direction indicated by the arrow 300 along the axis of the workpiece 200, so that the ion beam is passed through the openings 132 and 134 as shown in FIG. 10B. The sub-doped regions 210b and 220b perform the same ion cloth value again. Then, the workpiece 200 is further driven to rotate 90 degrees with respect to the opening device 130 in the direction indicated by the arrow 300 along the axis of the workpiece 200, so that the ion beam is as shown in FIG. 10C. The same ion distribution values are again performed on the sub-doped regions 210c and 220c through the openings 132 and 134. Finally, the re-driving workpiece 200 is again rotated 90 degrees with respect to the opening device 130 about the axis of the workpiece 200 in the direction indicated by the arrow 300, so that the ion beam passes through the openings 132 and 134 as shown in FIG. The same ion cloth value is again performed for the sub-doped regions 210d and 220d. In this way, the ion cloth values of the two doped regions 210 and 220 can be completed together.

In addition, in the case where the workpiece can be driven to rotate around the axis of the workpiece relative to the opening device, not only the opening device 130 as shown in FIG. 2 can be used for ion implantation of the annular doping region 210, but also An opening device having a 1/6 annular opening as shown in FIG. 11A, an opening device having two 1/6 annular openings in an opposite configuration as shown in FIG. 11B or as shown in FIG. 11C is used. A plurality of opening devices having a 1/6 annular opening arranged in an annular array are used to ion implant the doped region 210. Similarly, not only the opening device 130 as shown in FIG. 5 can be used for ion implantation of the circular doping region 210, but also an opening having a 1/6 circular opening as shown in FIG. 11D can be used. The device, as shown in Figure 11E, has two 1/6 circular openings in opposite configurations or a plurality of 1/6 circular openings in an annular array as shown in Figure 11F. An opening device is used to ion implant the doped region 210. That is, different embodiments of the present invention may use an opening device having a certain opening to perform ion cloth values on different shapes and/or different sizes of doped regions on the same or different workpieces, or in pairs When a doped region having a specific shape/specific size is subjected to ion cloth value, it is necessary to select one of a plurality of different openings to use.

Through the above embodiments, those skilled in the art should understand that, in other embodiments not shown, as long as the doping regions can be appropriately divided, and the workpiece and the opening device are appropriately rotated in cooperation, It is possible to apply a small number of opening devices to a plurality of doped regions of different shapes and/or different sizes. It should be noted that in the above embodiments, the axis of the opening device coincides with the axis of the workpiece as an example, but in other embodiments, the axis of the opening device may also deviate from the axis of the workpiece.

For example, please refer to FIG. 12 and FIG. 13 first. In this embodiment, the opening device 130 has a square opening 132 and a circular opening 134, and the workpiece 200 also has a square doped region 210 and a A circular doped region 220. As shown in FIG. 14A, when the opening device 130 covers the workpiece 200 and is pivoted about its axis offset from the axis of the workpiece 200, as indicated by arrow 300. The direction of rotation is relative to the workpiece 200 until the opening 132 just exposes the desired doping area 210, the opening device 130 will just cover the doped region 220, and the opening 134 will be just outside the workpiece 200. At this time, the ion beam can pass the ion implantation value only to the doped region 210 through the opening 132. In contrast, as shown in FIG. 14B, when the opening device 130 is again rotated about its axis in the direction indicated by the arrow 300 relative to the workpiece 200 until the opening 134 just exposes the desired doping area 220, The opening device 130 will just cover the doped region 210 and the opening 132 will be just outside the workpiece 200. At this point, the ion beam can pass through the opening 134 and only ionize the doped region 220.

In addition to this, the present invention further provides an ion implantation method for performing ion cloth values on a plurality of doped regions or a plurality of sub-doped regions on a workpiece using a single opening device. Of course, it will be understood by those of ordinary skill in the art that the following embodiments can be utilized not only in the ion implanter disclosed in the above embodiments, but also in other ion implanters.

15A to 15C are block diagrams respectively showing an ion implantation method according to an embodiment of the present invention. Referring first to FIG. 15A, the ion implantation method disclosed in this embodiment includes the following steps. First, as shown in block S100, a workpiece having a plurality of first doped regions is provided. Wherein, the first doped regions have a specific size and shape, and may be adjacent to each other, separated from each other, arranged in an array, or partially overlapped. Moreover, not only can the first doped regions have exactly the same desired ion cloth concentration, but at least some of the first doped regions can also have different desired ion cloth concentration. Next, as shown in block S110, an opening device is provided on a side of the workpiece having the first doping region, wherein the opening device is made of a graphite material having at least one first opening, and the size and shape of the first opening correspond to The size and shape of the first doped region. The shape of the first opening may be combined by at least one of a sector, an arc, a circle, an ellipse, a rectangle, and a square, or may be any other shape.

Then, as shown in block S120, the opening means and the workpiece are relatively rotated such that the first opening just exposes one of the first doped regions. Thereafter, as shown in block S130, an ion beam is provided on a side of the opening device away from the workpiece such that at least a portion of the ion beam passes through the opening to ion implant the exposed first doped region without Bombing to other areas of the workpiece. As a result, the ion cloth value of one of the doped regions has been completed. It should be noted that after performing the ion cloth value of one of the doped regions, the above-mentioned blocks S120 and S130 can be repeated. Steps until the ion beam has been ion implanted on all of the first doped regions. Wherein, the ion beam may be a one-line ion beam or a point ion beam. Moreover, in the case that the first doped regions are arranged in an annular array, the step described in the above block S120 may further comprise driving at least one of the opening device and the workpiece to rotate by a specific angle, wherein the specific angle may be 30. Degree, 36 degrees, 45 degrees, 60 degrees, 90 degrees, 120 degrees, 180 degrees or other angles.

Similarly, in a particular embodiment, the plurality of doped regions of the workpiece may differ in at least one of size and shape (in the following embodiments a first doped region and a second doped region) The miscellaneous area is exemplified by an example). At this time, it can be distinguished that the axis of the opening device coincides with the axis of the workpiece (please refer to FIG. 15B ) and the axis of the opening device deviates from the axis of the workpiece (please refer to FIG. 15C ). Be explained.

First, an embodiment in which the axis of the opening device coincides with the axis of the workpiece will be described with reference to the block diagram shown in Fig. 15B. As shown in block S200, a workpiece having a plurality of first doped regions and a second doped region is first provided, wherein the first doped region may be different from the second doped region in at least one of size and shape. . Next, as shown in block S210, an opening device is provided on a side of the workpiece having the first doped region and the second doped region, wherein the opening device has a first opening and a second opening, and the first opening and the first opening The relative position between the two openings corresponds to the relative position between one of the first doped regions and the second doped region.

Then, as shown in block S220, the opening means and the workpiece are relatively rotated such that the first opening and the second opening respectively expose one of the first doped regions and the second doped region, respectively. Thereafter, as shown in block S230, an ion beam is provided on a side of the opening device remote from the workpiece such that at least a portion of the ion beam passes through the first opening and the second opening and the exposed first doped region Ion implantation is performed with the second doped region without bombarding the other first doped regions and other regions of the workpiece.

Similarly, in this embodiment, the shapes of the first opening and the second opening may be combined by at least one of a sector, an arc, a circle, an ellipse, a rectangle, and a square, respectively, or other shapes. And when the number of the first doped regions is plural, at least one of the first doped regions and the second doped region may abut each other, be separated from each other, or partially overlap. Moreover, when the number of the second doped regions is plural, the second doped regions may also abut each other, be separated from each other, or partially overlap. In addition to this In addition, when the number of the first doped region and the second doped region are the same and both are plural, the steps described in the blocks S220 and S230 may be continuously repeated as described in the previous embodiment until The ion beam is subjected to ion implantation for all of the first doped regions and the second doped regions.

In addition, as long as the ion cloth value is performed with different ion cloth value parameters, at least one of the first doping regions and at least one of the second doping regions may have different desired ion cloth value concentrations. Of course, those of ordinary skill in the art will recognize that the first doped region and the second doped region may be identical in size and shape. In this case, this embodiment can be understood as a single opening device having a plurality of openings which are identical in size and shape, and ion-valued a plurality of first doped regions.

Next, an embodiment in which the axis of the opening device is deviated from the axis of the workpiece will be described with reference to the block diagram shown in FIG. 15C. First, as shown in block S300, a workpiece having a first doped region and a second doped region is provided, wherein the first doped region and the second doped region may be identical in size and shape, or There are at least some differences. Moreover, different first doped regions, between different second doped regions, and between the first doped region and the second doped region may abut each other, be separated from each other or partially overlap.

Next, as shown in block S310, an opening device is provided on a side of the workpiece having the first doped region and the second doped region, wherein the opening device has a first opening and a second opening, and the first opening and the first opening The size and shape of the two openings correspond to the size and shape of the first doped region and the second doped region, respectively. Similarly, the shapes of the first opening and the second opening may be combined by at least one of a sector, an arc, a circle, an ellipse, a rectangle, and a square, respectively, or may be any other shape.

Then, as shown in block S320, the opening means and the workpiece are relatively rotated such that the first opening just exposes one of the first doped regions. At this time, the second opening can be rotated outside the workpiece. Thereafter, as shown in block S330, an ion beam is provided on a side of the opening device away from the workpiece such that at least a portion of the ion beam passes through the first opening to ion implant the exposed first doped region. It does not bombard other first doped regions, second doped regions, and other regions of the workpiece.

Then, as shown in block S340, the opening device and the workpiece are again rotated relative to each other such that the second opening just exposes the second doped region. At this time, the first opening may be rotated outside the workpiece, and one of the first doped regions may be exposed together. After that, as shown in block S350, it is open again. The port device provides an ion beam away from the side of the workpiece such that at least a portion of the ion beam passes through the second opening to ion implant the exposed second doped region without bombarding all of the first doping Miscellaneous areas and other areas of the workpiece.

Of course, if the first opening exposes one of the first doped regions together in the previous step, the ion beam may also be exposed through the first opening and the second opening in this step. The first doped region and the second doped region are ion implanted. It should be noted that the ion beams used in the blocks S330 and S350 can have not only the same ion cloth value parameter, but also the same ion cloth value concentration between the first doped region and the second doped region. There are different ion cloth value parameters to have different ion cloth value concentrations between the first doped region and the second doped region.

In addition, those skilled in the art can recognize that, like the embodiment shown in FIG. 1 to FIG. 10D, the ion cloth value method disclosed in this embodiment can also continue to repeat the block S320. And the steps described in S330 until the ion beam is ion implanted on all of the first doped regions. Similarly, when the number of second doped regions is plural, the ion cloth value method disclosed in this embodiment can also continue to repeat the steps described in blocks S340 and S350 until the ion beam pairs these second dopings. All the miscellaneous areas have been ion implanted. Similarly, when repeating the steps described in the block S330 and/or S350, the ion cloth value parameter of the ion beam may be adjusted according to the use requirement to make different first doping regions and/or different The two doped regions may also have different ion cloth concentration concentrations.

The embodiments disclosed above all utilize an opening on a single opening device to ionize one or more doped regions of the workpiece. However, the present invention basically focuses only on the relative rotation of the workpiece and the opening means, and is not necessarily limited to having a few openings in either of the opening means, nor is it necessary to limit the use of several opening means. In the following embodiments, a combined opening formed by combining openings of a plurality of opening devices (exemplified by only two examples) to ionize at least one doped region on the workpiece will be further disclosed. Cloth value.

In the following embodiments, FIG. 16A to FIG. 18B disclose an embodiment in which the axes of all the opening devices coincide with the axis of the workpiece, and FIGS. 19A to 21B disclose at least one opening device. Embodiments in which the axis will deviate from the axis of the workpiece. 16A and 16B respectively illustrate a left side view of an opening device according to an embodiment of the present invention, and FIG. 17 illustrates a first aspect of the present invention. A left side view of one of the workpieces of the embodiment, and FIGS. 18A-18B illustrate the operation of the ion cloth value of the workpiece depicted in FIG. 17 using the opening device illustrated in FIGS. 16A and 16B schematic diagram. 19A and 19B respectively illustrate a left side view of an opening device according to an embodiment of the present invention, and FIG. 20 illustrates a left side view of a workpiece according to an embodiment of the present invention, and FIGS. 21A to 21B. A schematic diagram of the operation of applying the ion cloth values to the workpiece depicted in FIG. 20 using the opening device illustrated in FIGS. 19A and 19B is illustrated.

Referring first to FIGS. 16A-18B, this embodiment is similar to the embodiment illustrated in FIGS. 1A and 1B, the difference being mainly in the number of opening devices, and other details of the ion implanter. The vacuum chamber, the ion beam assembly, the ion beam, the material of the opening device, and the angle and number of relative rotations between the workpiece and the opening device, etc., will not be described herein. In this embodiment, the ion implanter can have a plurality of opening devices (in this embodiment only one first opening device 130 as depicted in FIG. 16A and one second as depicted in FIG. 16B) The opening device 140 is exemplified by way of example). Moreover, as shown in FIG. 18A, the axes of the first opening means 130 and the second opening means 140 coincide with the axis of the workpiece 200 as depicted in FIG. Wherein, the first opening device 130 has a first opening 132 having a rectangular shape, and the second opening device 140 has a second opening 142 having a rectangular shape, and the first opening device 130 and the second opening device 140 are respectively opposite to the second opening device 140 The workpiece 200 is rotated such that the first opening 132 and the second opening 142 at least partially overlap to form a first combined opening 102 that is square as shown in Figure 18A.

For example, in this embodiment, the first opening device 130 and the second opening device 140 are rotated 90 degrees in the clockwise direction from the orientations shown in FIGS. 16A and 16B, respectively. Moreover, the first combined opening 102 is just capable of exposing a first doped region 210 of the workpiece 200. For ease of identification, FIGS. 17 and 18A highlight the first doped region 210 in a hatched line drawn in dashed lines. As such, at least a portion of the ion beam can ion implant only the first doped region 210 through the first combined opening 102 without bombarding other regions of the workpiece.

In addition, the workpiece 200 may further have a second doping region 220, and the first opening device 130 and the second opening device 140 are respectively rotatable relative to the workpiece 200 such that the first opening 132 and the second opening 142 are at least partially The overlaps are made to form a second combined opening 104 that is square as shown in Figure 18B. For example, in this embodiment, the first opening device 130 is maintained as shown in FIG. 18A. The orientation, while the second opening device 140 is again rotated 90 degrees clockwise from the orientation shown in Figure 18B. Moreover, the second combined opening 104 is just capable of exposing the second doped region 220. Similarly, for ease of identification, FIGS. 17 and 18B also highlight the second doped region 220 in a hatched line drawn in dashed lines. As such, at least a portion of the ion beam can ion implant only the second doped region 220 through the second combined opening 104 without bombarding the first doped region 210 and other regions of the workpiece.

It should be noted that although the first doped region 210 and the second doped region 220 depicted in this embodiment have the same size and shape, only differ in position, but in other embodiments not shown. They can also have different sizes and shapes. In addition, the first doped region 210 and the second doped region 220 may be separated from each other as shown in FIG. 17, or may be adjacent to each other or partially overlapped. Likewise, the first doped region 210 and the second doped region 220 can also have different desired ion cloth value concentrations.

Next, referring to FIG. 19A to FIG. 21B, this embodiment is similar to the embodiment illustrated in FIGS. 16A to 18B, and the difference mainly lies in that the axes of the two opening devices 130 and 140 are all deviated. At the axis of the workpiece 200, other details of the ion implanter include the vacuum chamber, the ion beam assembly, the ion beam, the material of the opening device, and the angle and number of relative rotations between the workpiece and the opening device, etc. This will not be repeated here. In this embodiment, the first opening device 130 has a first opening 132 in a circular shape, and the second opening device 140 has a second opening 142 in a 1/4 circle shape, and the first opening device 130 and The second opening device 140 is rotatable relative to the workpiece 200, respectively, such that the first opening 132 and the second opening 142 at least partially overlap to form a 1/4 circle but smaller than the second opening as shown in FIG. 21A. A first combined opening 102 of 142.

For example, in this embodiment, the first opening device 130 and the second opening device 140 are maintained in the orientations shown in FIGS. 19A and 19B, respectively. Moreover, the first combined opening 102 is just capable of exposing a first doped region 210 of the workpiece 200. Similarly, for ease of identification, FIGS. 20 and 21A highlight the first doped region 210 in a hatched line drawn in dashed lines. As such, at least a portion of the ion beam can ion implant only the first doped region 210 through the first combined opening 102 without bombarding other regions of the workpiece.

In addition, the workpiece 200 may further have a second doping region 220, and the second opening device 140 may further have a third opening 144 in a semicircular shape, and the first opening device 130 and the second opening device 140 may respectively be respectively Rotating relative to the workpiece 200 to bring the first opening 132 and the third opening 144 to The portions are overlapped to form a second combined opening 104 that is also semi-circular but smaller in size than the third opening 144 as shown in FIG. 21B. For example, in this embodiment, the first opening device 130 is still maintained in the orientation shown in FIG. 21A, and the second opening device 140 is rotated 180 degrees in the clockwise direction from the orientation shown in FIG. 21B. Moreover, the second combined opening 104 is just capable of exposing the second doped region 220. Similarly, for ease of identification, FIGS. 20 and 21B also highlight the second doped region 220 in a hatched line drawn in dashed lines. As such, at least a portion of the ion beam can ion implant only the second doped region 220 through the second combined opening 104 without bombarding the first doped region 210 and other regions of the workpiece.

In addition, an application method is further proposed which utilizes openings on two open aperture devices to combine combined openings of size and shape corresponding to doped regions. Of course, the scope covered by this application method should not be limited to the above embodiments, because those skilled in the art can easily apply this application method to other undisclosed with other numbers of opening and opening devices. Various similar embodiments herein. Similarly, the following embodiments can be applied not only to the ion implanter disclosed in the above embodiments but also to other ion implanters. Moreover, the method disclosed in the following embodiments and the method disclosed in FIGS. 15A to 15C include angles and times of relative rotation between the type of the ion beam, the material of the opening device, the workpiece and the opening device, and the required method. The ion cloth value concentration and the like are similar, and will not be described herein.

22A to 22D are block diagrams respectively showing an ion implantation method according to an embodiment of the present invention. Referring first to FIG. 22A, the ion implantation method disclosed in this embodiment includes the following steps. First, as shown in block S400, a workpiece having at least one doped region is provided, wherein the doped regions have a particular size and shape. Next, as shown in block S410, a first opening means is provided on the side of the workpiece having the doped region, wherein the first opening means has at least one first opening. Then, as shown in block S420, a second opening means is provided between the workpiece and the first opening means, wherein the second opening means has at least one second opening. Thereafter, as shown in block S430, the first opening means and the second opening means are respectively rotated relative to the workpiece such that the first opening and the second opening at least partially overlap to form a combined opening and just expose the doped area. Then, as shown in block S440, an ion beam is provided on a side of the first opening device remote from the workpiece and the second opening device to A small portion of the ion beam is ion implanted only by doping the doped regions by combining the openings without bombarding other areas of the workpiece.

Similarly, the workpiece may have a plurality of doped regions that are identical in size and shape but are not identical in orientation. In this case, referring to FIG. 22B, after the step described in the above-mentioned block S440 is performed, the method further includes: driving the workpiece to rotate around an axis of the workpiece as shown in block S450, so as to make the combined opening The other of these doped regions is just exposed. Then, the steps described in the above blocks S440 and S450 are repeated until the ion beam is ion-implanted for all of the doped regions. Of course, before the step described in the above block S450 is performed, the step of ion implantation by the first ion beam may be further included. In addition, before performing the steps described in the above block S450, at least one of the first opening device and the second opening device may be further covered by the first doping region.

In addition, in a particular embodiment, the plurality of doped regions of the workpiece may differ in at least one of size and shape (in the following embodiments a first doped region and a first The two doped regions are exemplified by examples). At this point, it can be divided to rotate the opening device to a different orientation so that the same opening is combined into different combined openings (please refer to FIG. 22C) and the opening device is rotated to a different orientation so that different openings come The two embodiments are combined to illustrate different combinations of openings (please refer to Figure 22D).

Referring first to FIG. 22C, in this embodiment, similar to the embodiment shown in FIG. 22B, the difference between the two is mainly to synchronously drive the first opening device and the second opening device to rotate relative to the workpiece as indicated by block S550. The method of driving the workpiece self-rotation shown in the block S450 in FIG. 22B is replaced, and other identical or similar steps will not be described herein. Briefly, regardless of whether the axes of the first opening device and the second opening device coincide with the axis of the workpiece, as long as the first opening device and the second opening device are driven to rotate to different orientations relative to the workpiece, the first opening and The second opening can combine a variety of different combined openings for application to doped regions having different sizes and/or shapes.

In contrast, FIG. 22D reveals that the axes of the first opening device and the second opening device are both offset from the axis of the workpiece, and at least one of the two has a plurality of openings (in the following embodiments An embodiment of a second opening and a third opening of the second opening device is exemplified. Referring to FIG. 22D, in this embodiment, similar to the embodiment shown in FIG. 22C, between the two The difference is mainly in that the second combined opening is combined with the first opening and the third opening as shown in block S650 to replace the second combined opening with the first opening and the second opening instead of the block S550 in FIG. 22C. Other identical or similar steps will not be described here. In other words, since more openings of different shapes and/or sizes are used in this embodiment, it is possible to combine more openings of different sizes and/or shapes for application to more different sizes and/or shapes. Miscellaneous area.

In view of the above, since the present invention utilizes the relative rotation between the opening device and the workpiece, the single opening device or the plurality of opening devices can be combined with each other via the opening or the opening thereof, and can be in the process of relative rotation. The entire doped region on the workpiece is also gradually exposed, even if the shape and size of the opening are not one-to-one equal to the shape and size of each doped region. Thus, the present invention can easily use a relatively small variety of opening devices for a greater variety of one or more doped regions having different sizes, shapes and positions (whether in the same workpiece or even in different workpieces). Perform ion implantation.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and those skilled in the art can make some modifications and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

130‧‧‧Opening device

132‧‧‧ openings

200‧‧‧Workpiece

210‧‧‧Doped area

210a, 210b, 210c, 210d‧‧‧ sub-doped regions

300‧‧‧ arrow

Claims (35)

An ion implanter comprising: a vacuum chamber; an ion beam assembly for providing an ion beam toward a workpiece located within the vacuum chamber, wherein the workpiece has a plurality of doped regions; an opening device, configured And a driving device for driving at least one of the opening device and the workpiece to rotate; wherein the opening just exposes the opening One of the doped regions is such that at least a portion of the ion beam passes through the opening to ion implant the exposed doped region; and the opening sequentially exposes the different doped regions. The ion implanter of claim 1, wherein the opening device is made of graphite. The ion implanter of claim 1, wherein: an axis of the opening device is offset from the axis of the workpiece; or an axis of the opening device coincides with the axis of the workpiece. The ion implanter of claim 1, wherein the different doped regions respectively have a desired ion cloth concentration. The ion implanter of claim 1, wherein the number of the openings is plural, and the sizes, shapes and relative positions of the different openings correspond to different sizes and shapes of the doped regions. And relative position. An ion implantation method comprising: (a) providing a workpiece, wherein the workpiece has a plurality of first doped regions; (b) providing an opening means on a side of the workpiece having the first doped regions, wherein the opening means has at least one first opening; (c) causing the opening means and the workpiece to rotate relative to each other The first opening just exposes one of the first doped regions; and (d) providing an ion beam on a side of the opening device remote from the workpiece such that at least a portion of the ion beam passes through the first opening And performing ion implantation on the exposed first doped region; wherein after performing step (d), further comprising repeating step (c) and step (d) until the ion beam is A doped region is all ion implanted. The ion implantation method according to claim 6, wherein the opening device is made of a graphite material. The ion implantation method of claim 6, wherein the different doped regions respectively have a desired ion cloth concentration. The ion implantation method of claim 6, wherein when the axis of the opening device is offset from the axis of the workpiece, when the workpiece is more different in at least one of size and shape At least one second doped region of the first doped region, and when the opening device further has at least one second opening, after performing the step (d), the method further comprises: (e) causing the opening device and the The workpiece is relatively rotated such that the second opening just exposes the second doped region; and (f) the ion beam is provided on a side of the opening device remote from the workpiece such that at least a portion of the ion beam passes The second opening is ion implanted to the second doped region. The ion implantation method of claim 9, wherein the step (e) further comprises at least one of: rotating the first opening to the outside of the workpiece; covering the first doped regions; And causing the first opening to expose one of the first doped regions, wherein the step (f) further comprises: and causing at least a portion of the ion beam to pass through the first opening The first doped region is ion implanted. The ion implantation method of claim 9, wherein at least one of the first doped regions and the second doped region respectively have a desired ion cloth concentration. The ion implantation method according to claim 9, wherein when the number of the second doped regions is plural, after the step (f) is performed, the step (e) and the step are further repeated. (f) until the ion beam is ion implanted for the second doped regions. The ion implantation method of claim 12, wherein the different second doped regions respectively have a desired ion cloth concentration. The ion implantation method according to claim 6, wherein when the axis of the opening device coincides with the axis of the workpiece, when the workpiece has more than one of a size and a shape, the workpiece is different from the first At least one second doped region of a doped region, wherein the opening device further has at least one second opening, and a relative position between one of the first doped regions and the second doped region corresponds to And the relative position between the first opening and the second opening further comprises: step (c) one and causing the second opening to just expose the second doped region; and the step (d) At least a portion of the ion beam is ion implanted through the second opening to the second doped region. The ion implantation method of claim 14, wherein at least one of the first doped regions and the second doped region respectively have a desired ion cloth concentration. The ion implantation method of claim 14, wherein the number of the second doped regions is plural, and after performing the step (d), the step (c) and the step are further repeated ( d) until the ion beam is ion-implanted for the first doped regions and the second doped regions. The ion implantation method of claim 16, wherein the different second doped regions respectively have a desired ion cloth concentration. An ion implanter comprising: a vacuum chamber; an ion beam assembly for providing an ion beam toward a workpiece located within the vacuum chamber, wherein the workpiece has a first doped region; a first opening a device disposed in the vacuum chamber and a transmission path of the ion beam and having a first opening; and a second opening device disposed between the first opening device and the workpiece and having a second An opening; wherein the first opening and the second opening at least partially overlap to form a first combined opening that just exposes the first doped region, and at least a portion of the ion beam passes through the first combined opening The first doped region is ion implanted. The ion implanter of claim 18, further comprising a driving device for performing at least one of: driving the first opening device to rotate relative to the workpiece; and driving the second opening device relative to the Rotating the workpiece; and driving the workpiece to rotate about an axis of the workpiece. The ion implanter of claim 18, wherein at least one of the first opening device and the second opening device is made of graphite. The ion implanter of claim 19, wherein the driving device drives the first opening device, the second opening device and the workpiece at least when the workpiece further has at least one second doping region Rotating another specific angle to cause the first opening and the second opening to at least partially overlap to form a second combined opening that just exposes the second doped region, and at least a portion of the ion beam passes through the The second combined opening is ion implanted to the second doped region. The ion implanter of claim 21, wherein the first doped region and the second doped region respectively have a desired ion cloth concentration. The ion implanter of claim 18, wherein: an axis of at least one of the first opening device and the second opening device is offset from the axis of the workpiece; or the first opening The axis of the device and the second opening device coincide with the axis of the workpiece. An ion implantation method comprising: (a) providing a workpiece, wherein the workpiece has at least one first doped region; (b) providing a first opening device on a side of the workpiece having the first doped region, Wherein the first opening device has a first opening; (c) providing a second opening device between the workpiece and the first opening device, wherein the second opening device has a second opening; (d) The first opening device and the second opening device are respectively rotated relative to the workpiece such that the first opening and the second opening at least partially overlap to form a first combined opening that just exposes the first doped region; (e) providing a first ion beam on a side of the first opening device remote from the workpiece, such that at least a portion of the first ion beam passes through the first combined opening to ion cloth the first doped region plant. The ion implantation method of claim 24, wherein at least one of the first opening device and the second opening device is made of a graphite material. The ion implantation method according to claim 24, when the number of the first doped regions is plural, after performing the step (e), the method further comprises: (f) driving the workpiece around the workpiece Rotating an axis such that the first combined opening just exposes the other of the first doped regions; (g) providing the ion beam such that at least a portion of the first ion beam passes through the first combination Opening the exposed first doped region by ion implantation; and (h) repeating the step (f) and the step (g) until the first ion beam is all of the first doped regions Ion implantation has been carried out. The ion implantation method of claim 26, wherein the first doped regions each have a desired ion cloth concentration. The ion implantation method of claim 24, wherein the step (f) further comprises driving the workpiece to rotate about the axis of the workpiece. The ion implantation method of claim 28, when the workpiece further has at least one second doped region, after performing the step (e), further comprising: (f) the first opening device And rotating the second opening device relative to the workpiece, respectively, such that the first opening and the second opening at least partially overlap to form a second combined opening that just exposes the second doped region; and (g) The first opening device provides a second ion beam away from a side of the workpiece such that at least a portion of the second ion beam passes through the second combined opening to ion implant the second doped region. The ion implantation method according to claim 29, further comprising at least the following Before performing the step (f), further comprising stopping ion implantation with the first ion beam; the step (f) further comprising covering the first doped region; and the first ion beam and the second ion beam There are different beam parameters, wherein the beam parameters include at least one of a beam size, a total current amount, a cross-sectional shape, and a beam current distribution in a cross section. The ion implantation method of claim 29, wherein the first doped region and the second doped region respectively have a desired ion cloth concentration. The ion implantation method according to claim 31, when the number of the second doped regions is plural, after performing the step (g), the method further comprises: (h) driving the workpiece around the workpiece Rotating an axis such that the second combined opening just exposes the other of the second doped regions; (i) providing the second ion beam such that at least a portion of the second ion beam passes through the first Dimly combining the exposed second doped regions with ion implantation; and (j) repeating the step (h) and the step (i) until the second ion beam is doped to the second doping All areas have been ion implanted. The ion implantation method of claim 32, wherein the second doped regions each have a desired ion cloth concentration. The ion implantation method of claim 32, wherein the step (h) further comprises driving the workpiece to rotate about the axis of the workpiece. The ion implantation method of claim 24, wherein: the axis of the first opening device and an axis of at least one of the second opening devices are offset from an axis of the workpiece; or The axis of the first opening device and the axis of the second opening device coincide with an axis of the workpiece.