CN101138080A - Methods and apparatus for enabling multiple process steps on a single substrate - Google Patents
Methods and apparatus for enabling multiple process steps on a single substrate Download PDFInfo
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- CN101138080A CN101138080A CNA2006800075139A CN200680007513A CN101138080A CN 101138080 A CN101138080 A CN 101138080A CN A2006800075139 A CNA2006800075139 A CN A2006800075139A CN 200680007513 A CN200680007513 A CN 200680007513A CN 101138080 A CN101138080 A CN 101138080A
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Abstract
Substrate masking apparatus includes a platen assembly to support a substrate for processing, a mask having an aperture, a retaining mechanism to retain the mask in a masking position, and a positioning mechanism to change the relative positions of the mask and the substrate so that different areas of the substrate are exposed through the aperture in the mask. The apparatus may further include a mask loading mechanism to transfer the mask to and between the masking position and a non-masking position. The processing may include ion implantation of the substrate with different implant parameter values in different areas. In other embodiments, an area of the substrate to be processed is selectable by a mask, a shutter or a beam modifier in front of the substrate.
Description
The mutual reference of related application
The application's case is advocated the rights and interests of the provisional application sequence number 60/660420 of being applied on March 9th, 2005, is dissolved in this in its integral body in the lump as a reference.
Technical field
(for example, semiconductor crystal wafer) processing more specifically is to the present invention relates to a kind of used method and apparatus of zones of different that comes treatment substrate with different processing parameters to the present invention relates to a kind of substrate.The present invention can be used for the ion of semiconductor crystal wafer and implants, and implants or semiconductor crystal wafer but be not limited to ion.
Background technology
In traditional ion was implanted, whole wafer was implanted parameter value with one group, for example, dosage, energy, mixed species and beam incident angle, implanted.In the application of major part, need on the surface of semiconductor crystal wafer, reach uniform ion and implant.
In the development process of integrated circuit, process conditions is changed to determine best processing procedure and device parameter values.Each Experimental design in research and development and the production equipment (DOE, Design OfExperiment) need make single wafer be used for each material point of experiment.If a developer attempts to guide an experiment with a plurality of different parameter values, then need a plurality of wafers, its number equals the number of different parameters value.The cost of wafer (particularly large diameter wafer) is very expensive when making processing procedure and component parameters optimization.For example, each cost Shi $5 of the wafer of 300 mm dias, 000.
Therefore, need the whole bag of tricks and device that a plurality of treatment steps can be carried out on single substrate, descend so that integrated circuit is researched and developed the number of required substrate.
Summary of the invention
According to a first aspect of the present invention, substrate shade device comprises: a dull and stereotyped combination (assembly), and it is supporting the substrate of a processing usefulness; One light shield, it has a kind of aperture; One maintaining body, it remains in the shade position light shield; And one the location mechanism, it changes the relative position of this light shield and substrate, to come the zones of different of substrate is exposed via the aperture in the light shield.
In certain embodiments, above-mentioned processing procedure comprises that coming that with different implantation parameter values the zones of different of substrate is carried out ion implants.Aperture in the light shield uses one group of implantation parameter value of having set to define the zone that is about to implant of this substrate.
According to a second aspect of the present invention, the invention provides a kind of processing method of substrate.This method comprises: the light shield with aperture is located with respect to substrate, exposed in the first area of substrate coming via the aperture, and come the first area of this substrate is handled via the aperture in the light shield; The relative position of light shield and substrate is changed, the second area of substrate is exposed coming, and come the second area of this substrate is handled via the aperture in the light shield via the aperture.
According to a third aspect of the present invention, a kind of Ion Implantation Equipment comprises: an ion beam generator, and it is used for producing ion beam; One dull and stereotyped combination, it is carrying out being used for supporting substrate when ion is implanted with ion beam; One light shield, it has the aperture; One light shield is written into mechanism, and it moves to a shade position with light shield; One maintaining body, it remains in the shade position light shield; And one the location mechanism, the relative position that it changes this light shield and substrate makes ion beam come the zones of different of substrate is implanted via the aperture in the light shield.
According to a fourth aspect of the present invention, the invention provides a kind of processing method of substrate.This method comprises: come the zones of different of substrate is handled with different process parameter values.In certain embodiments, this processing comprises: come substrate is implanted with different implantation parameter values.
According to a fifth aspect of the present invention, the invention provides a kind of ion implantation device, it comprises: a process chamber; One ion beam generator, it is used for producing ion beam; One flat board, it is used for supporting substrate in process chamber; And one implant control element, and it is being controlled ion and is implanting, and the zones of different of substrate is implanted with different implantation parameter values.This implants control element can comprise a light shield, an optical gate (shutter) or a light beam corrector, and its place ahead that is positioned at substrate is to define the zone that is about to implantation of this substrate.
Description of drawings
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below.
Fig. 1 is the calcspar of having simplified according to the ion implant system of first embodiment of the invention.
Fig. 2 is the diagram of light shield shown in Fig. 1 and wafer.
Fig. 3 is the perspective view according to the substrate shade device of second embodiment of the invention.
Fig. 4 is the perspective view according to the substrate shade device of third embodiment of the invention.
Fig. 5 is the perspective view according to the substrate shade device of fourth embodiment of the invention.
Fig. 6 is the perspective view according to the substrate shade device of fifth embodiment of the invention.
Fig. 7 is the perspective view according to the substrate shade device of sixth embodiment of the invention.
Fig. 8 is the perspective view according to the substrate shade device of seventh embodiment of the invention.
Fig. 9 is the diagram of the substrate disposer that can use with substrate shade device of the present invention.
Figure 10 is the diagram that can be used to dispose the substrate disposer of substrate and light shield this two.
Figure 11 is the perspective view according to the substrate shade device of eighth embodiment of the invention.
Figure 12 is the perspective view that is installed in the substrate shade device in the Ion Implantation Equipment shown in Figure 11.
Figure 13 is the calcspar of having simplified according to the Ion Implantation Equipment of ninth embodiment of the invention.
Figure 14 is the perspective view according to the processing control apparatus of tenth embodiment of the invention.
Figure 15 is the calcspar of having simplified according to the Ion Implantation Equipment of eleventh embodiment of the invention.
Embodiment
Various handling implement uses in the processing of substrate (for example, semiconductor crystal wafer).According to one aspect of the present invention, a kind of handling implement (for example, Ion Implantation Equipment) is made amendment to handle the zone of having chosen of a substrate.In certain embodiments, the zone of be about to handling of substrate is chosen by a kind of actual light shield of locating with respect to substrate, on this actual light shield typical case is to be positioned at the place ahead of substrate and to separate with substrate.Two kinds or more treatment step be handled and be used in the different zone of substrate can by substrate, light shield or this relocating of the two.In other embodiments, the pending zone of substrate can be chosen by the optical gate of locating with respect to substrate.Optical gate can have the aperture of a kind of size and/or position changeable.The zones of different of substrate can be handled by the two control of optical gate, substrate position or this.In other embodiments, the pending zone of substrate can be chosen by the modification of ion beam, for example, during implanting, the some chosen during the blocking-up of ion beam or the some chosen are implanted, ion beam is departed to choose the pending zone of substrate by substrate.Different processing parameters can use in the zones of different of substrate.Will be understood that aspect of the present invention is macroscopic view (macro) zone of selectively handling at substrate, for example, each zone that comprises a plurality of integrated circuits, this aspect with the microminiaturization of selectively handling of integrated circuit out of the ordinary forms a kind of contrast (contrast).
There is multiple mode can in Ion Implantation Equipment, realize above-mentioned processing procedure.This technology can be used in single wafer architecture (it uses one dimension or two-dimensional scan) and the batch architecture.Implant in the framework at various ion, ion beam is distributed on the substrate by ion-beam scanning, substrate move or ion-beam scanning and substrate move combination.The present invention can implant framework with above-mentioned ion any use.
In one embodiment, light shield is positioned at the place ahead of substrate (for example, semiconductor crystal wafer).Among this embodiment, wafer mechanically or electrostatic means and being clamped on a kind of maintaining body (for example, flat board).Light shield is positioned at the place ahead of wafer.This light shield has excision zone or an aperture, and this aperture only allows to handle through aperture thus.Move between the shade position that this light shield can be before wafer and the non-shade position at light shield place when removing and basically wafer-process is not had an effect by wafer.Non-shade position can be inner treatment chamber or outside storage location.This processing system can use a kind of automatic photo-mask as described below to be written into and feel trim actuator.In another embodiment, light shield can manually be installed on the shade position.
In certain embodiments, light shield is written into feel trim actuator and makes light shield be moved to the shade position in wafer the place ahead by the storage location of internal vacuum chamber.First district to wafer handles, and for example, implants to carry out ion via the aperture in the light shield.Then, wafer moves with respect to light shield and to second district of this wafer handling.Wafer can be reorientated, and this for example can be rotated on a kind of finder in wafer handler reaches.In other embodiments, light shield is reorientated with respect to wafer.
In other embodiments, therefore the big I of light shield and this light shield identical with wafer can be disposed with identical wafer disposal system, and this system is transported to treating stations with wafer.A series of light shield can be placed in the wafer transfer box (FOUP, front opening unified pod), so allow to transport different light shields and each light shield is positioned at the place ahead of wafer exactly, carries out a kind of treatment step after each light shield changes.When using the different relative position of this light shield and wafer, can use single light shield to handle two zones or more a plurality of zone on the wafer.Wafer and/or light shield can be reorientated.Each light shield in the wafer transfer box (FOUP) in fact can be inequality and different zone wafer can handle severally.This kind mode (approach) can be applied to: single wafer Ion Implantation Equipment, and it comprises single shaft and the scanning of Twin-shaft machinery formula; Batch terminal station in the Ion Implantation Equipment; And multiple process chamber, it is to handle with other semiconductor processes instrument, for example, and sputter, evaporate process, CVD, etching, plasma cleaning system, laser annealing etc.
The calcspar of having simplified of the Ion Implantation Equipment of first embodiment of the invention is presented among Fig. 1 and Fig. 2.Semiconductor crystal wafer 20 is installed on the maintaining body or on dull and stereotyped 22, for example, is installed on the electrostatic folder of wafer or on the mechanical wafer clamp.Use a kind of keepers 34 and before being installed in wafer 20 at 32 light shields 30 with aperture.Light shield 30 is preferably and separates with wafer 20 and in fact do not contact.In certain embodiments, the interval of light shield 30 and wafer 20 must be enough greatly to allow wafer 20 to be written into and not contacted with light shield 30 by dull and stereotyped 22 downloads.Ion beam generator 40 is directed to wafer 20 with ion beam 42.Ion beam 42 can be a kind of silk ribbon shape ion beam, and its width diameter as wafer 20 at least is big.Ion beam 42 also can be that a kind of ion beam (scanning in one dimension or two dimension) maybe can be a kind of fixing ion beam.Mechanical scan machine 44 can make wafer 20 move in one dimension or two-dimensional space according to the framework of the configuration of ion beam 42 and Ion Implantation Equipment, so that ion beam 42 is distributed on the surface of wafer 20.
Light shield can be installed on the electric conducting material, and this electric conducting material makes the pollutant of the wafer of implanting minimized.Suitable material comprises carbon fiber, carborundum, silicon and graphite.The thickness of carbon fiber mask for example can be (inch) at 0.090 o'clock.The aperture can have more sharp-pointed edge with the borderline edge effect between restriction photomask materials and the aperture.This light shield information is just given by coming for example, and it is not a kind of restriction to the scope of the invention.
The relative position of light shield 30 and wafer 20 can change, to come the zones of different of wafer 20 is implanted via aperture 32.Can come light shield 30 and wafer 20 are reorientated by the two orientation again of the directed again of directed again, the light shield 30 of wafer 20 or this.In other embodiments, can use different light shields so that the zones of different of wafer 20 is implanted.All the zones of different of this wafer 20 is exposed, one or more parameter values of ion beam 42 can change at every turn.As a result, the implantation parameter value that the zones of different of wafer 20 can be different is implanted.
The substrate shade device of the second embodiment of the present invention is presented among Fig. 3.Substrate shade device 100 comprises a kind of dull and stereotyped combination 110 to support the substrate (for example, semiconductor crystal wafer 112) of handling usefulness when a kind of for example ion is implanted.
Dull and stereotyped combination 110 is being supported by scanning system 114.Substrate shade device 100 comprises in addition: a light shield 120, and it has aperture 122; One light shield is written into mechanism 130; And one the location mechanism 132, it is used for changing the relative position of this light shield 120 and wafer 112.In the embodiments of figure 3, this detent mechanism 132 can be a kind of wafer orienter, and it is the some of wafer handler, as following Fig. 9 description person.
Dull and stereotyped combination 110 comprises: a flat board 140, and it has the surface that a kind of wafer 112 supports usefulness; And an electrostatic folder or a mechanical type folder, it is used for making wafer 112 to be fixed on dull and stereotyped 140.This dull and stereotyped combination 110 also can comprise: a cooling system, and it is used for making wafer 112 coolings during handling; And a mechanism, it makes wafer 112 or reverse (twist) to its axis of centres rotation.In the embodiments of figure 3, this dull and stereotyped combination 110 comprises a plurality of light shield holding elements 142.As shown in Figure 3, light shield 120 can be provided with finger 144 to engage with light shield holding element 142.
This dull and stereotyped combination 110 is being supported by scanning system 114.This scanning system 114 can make 110 pairs of a kind of trunnion axis of this dull and stereotyped combination form to tilt with the implantation of carrying out various angulations and can make this dull and stereotyped combination 110 rotate to wafer to a kind of trunnion axis and be written into/unloading position.In addition, this scanning system 114 can make this dull and stereotyped combination 110 vertically move during ion is implanted.
In the embodiments of figure 3, light shield is written into mechanism 130 and comprises: a transfer arm 150, and it has a plurality of elements 152 that can engage with light shield 120; And a drive system 154, it makes this transfer arm 150 move being written between position and the storage location.
In when operation, light shield be written into mechanism 130 by the operation of drive system 154 make light shield 120 move to the shade position in wafer 112 the place aheads or thus the shade position shift out.When the shade position, this light shield 120 engages with light shield holding element 142.Then, light shield is written into mechanism 130 withdrawal and scanning system 114 and this dull and stereotyped combination 110 is moved to wafer is written into/unloading position.
Then, wafer 112 is written into light shield 120 belows by wafer disposal system shown in Figure 9, and this will be described in down.So wafer 112 can be used to implant or do other processing.Implant in the first area that the aperture 122 of wafer 112 in light shield 120 defined.After wafer was implanted, wafer was removed by the wafer disposal system.This wafer relocatable is so that come the second area of wafer 112 is exposed via aperture 122.This wafer for example can be reorientated by the finder of the some that belongs to the wafer disposal system.After each zone of having chosen of this wafer being implanted, removable this wafer 112 an and new wafer is loaded on dull and stereotyped 140 to implant.Light shield 120 can be retained on the position or be also removable, and this is to decide according to desired operator scheme.This transfer arm 150 can be moved to make and engage so that this light shield 120 is removed with light shield 120.142 of each holding elements do not engage with light shield 120, and this transfer arm 150 makes light shield 120 be retracted to storage location.
In the another kind operation, before light shield 120 moved to above-mentioned shade position, wafer 112 can be loaded on dull and stereotyped 140.
The substrate shade device 200 of third embodiment of the invention is presented among Fig. 4.Substrate shade device 200 comprises dull and stereotyped combination 210 and light shield 220.Scanning system, light shield are written into mechanism and detent mechanism omits in Fig. 4 to be easy to diagram.Dull and stereotyped combination 210 comprises a flat board 240, and it has: inner electrostatic folder 242 is to keep this wafer 212; And exterior static formula folder 244 is to keep this light shield 220.Light shield 220 comprises: aperture 222; Annulus 224, it is used for engaging exterior static formula folder 244; And the central area 226 that raises, itself and wafer 212 separate.
As mentioned above, light shield 220 can be written into mechanism and move to the shade position by light shield; Or this light shield 220 can move to the shade position by the wafer disposal system, and is as described below.Light shield 220 remains on the shade position by exterior static formula folder 244.Wafer 212 was loaded into before light shield 220 is written on dull and stereotyped 240, or wafer 212 is loaded into via the opening (not shown) of an appropriate size in the light shield 220 on dull and stereotyped 240.Wafer 212 is electrostatic folder 242 and keeping by inside.Then, first district of this wafer 212 is implanted or come first district is carried out other processing via aperture 222.Then, the relative position of wafer 212 and light shield 220 is changed,, and come second district of wafer 212 is implanted via aperture 222 so that come second district of wafer 212 is exposed via aperture 222.As mentioned above, the relative position of wafer 212 and light shield 220 can by the relocating of wafer 212, light shield 220 relocate or this relocating of the two changes.Repeat this a series of relocating till wafer 212 desired Zone Fulls have all been implanted.
The substrate shade device 300 of fourth embodiment of the invention is presented among Fig. 5.Substrate shade device 300 comprises a dull and stereotyped combination 310, and it is being supported by scanning system 314; And a light shield 320, it has aperture 322.Light shield is written into mechanism and detent mechanism by omitting among Fig. 5 to be easy to diagram.In the embodiment of Fig. 5, scanning system 314 is provided with a plurality of light shield holding elements 342.When flat board combination 310 tilt or rotate to wafer be written into/during unloading position, light shield holding element 342 remains on light shield 320 on the fixed position.
When operation, as mentioned above, light shield 320 can be written into mechanism and move to the shade position by light shield; Or this light shield 320 can move to the shade position by the wafer disposal system, and is as described below.When the shade position, this light shield 320 engages with each light shield holding element 342.Light shield is written into mechanism withdrawal and this scanning system 314 and this dull and stereotyped combination 310 is rotated to wafer is written into/unloading position.Wafer 312 is loaded into by the wafer disposal plant on dull and stereotyped 340.Then, first district to wafer 312 implants via the aperture in the light shield 320 322.After first district of wafer 312 being implanted, the relative position of light shield 320 and wafer 312 is changed and second district of wafer 312 is exposed so that implant.After has implanted in the zone of having chosen of wafer 312, make dull and stereotyped combination 310 move to wafer to be written into/unloading position is so that remove this wafer 312.Light shield is written into mechanism and moves to and be written into the position engaging with light shield 320, and 342 of light shield holding elements do not engage with light shield 320.Light shield 320 is movable to storage location when not using.In the another kind operation, before light shield 320 moved to the shade position, wafer 312 can be loaded on dull and stereotyped 340.
The substrate shade device 400 of fifth embodiment of the invention is presented among Fig. 6.Substrate shade device 400 comprises a dull and stereotyped combination 410, and it is being supported by scanning system 414; One light shield 420, it has aperture 422; And one light shield be written into mechanism 430.In the embodiment of Fig. 6, light shield is written into mechanism 430 and during ion is implanted this light shield 420 is positioned in the path of ion beam.Light shield is written into mechanism 430 can will be retracted to a storage position in this light shield 420 path by ion beam.In addition, light shield is written into that mechanism 430 can comprise a kind of detent mechanism 432 so that light shield 420 rotates with respect to this wafer 412.In other embodiments, can relocating by wafer 412 so that come the zones of different of this wafer 412 is exposed via aperture 422.For example, wafer 412 can be reorientated by the finder in the wafer disposal system.
The substrate shade device 500 of sixth embodiment of the invention is presented among Fig. 7.Substrate shade device 500 comprises a dull and stereotyped combination 510, and it is being supported by scanning system 514; And a light shield 520, it has aperture 522.Dull and stereotyped combination 510 is provided with light shield holding element 542, and among the embodiment of Fig. 7, light shield 520 is loaded on the light shield holding element 542 with manual type.Wafer 512 can by the wafer disposal system be written into or unloading and relocatable so that come zones of different is exposed to implant via the aperture in the light shield 520 522.In the time need not using this light shield 520, light shield 520 can manual type be removed by light shield holding element 542.
The substrate shade device 600 of seventh embodiment of the invention is presented among Fig. 8.Substrate shade device 600 comprises a dull and stereotyped combination 610, and it is being supported by scanning system 614; And a light shield 610, it has aperture 622.Dull and stereotyped combination 610 comprises a flat board 640 and an a plurality of light shield holding element 642.Light shield 620 can manual type be loaded on the light shield holding element 642.The difference of the embodiment of Fig. 8 and the embodiment of Fig. 7 mainly is the light shield holding element.Among the embodiment of Fig. 8, light shield holding element 642 moves between unlimited (open) and closed (closed) position by reversing flat board 640.Wafer holding element 642 moves to open position, and light shield 620 is loaded in the shade position and flat board 640 is reversed, and light shield holding element 642 is engaged with light shield 620.Said process oppositely so that light shield 620 remove by the shade position.
Be fit to the wafer disposal system operated with the substrate shade device of Fig. 3-8 simplified be diagrammatically shown among Fig. 9.Can to be on January 23rd, 1996 issue and be disclosed in pattern in the U.S. patent number 5 486 080 to Sieradzki to the wafer disposal system, and it is incorporated herein by reference.Vacuum chamber 710 comprises first robot 712, second robot 714, a transfer station 716 or wafer orienter and a dull and stereotyped combination 718.This dull and stereotyped combination 718 can be corresponding to the combination of the flat board shown in Fig. 3-8, as mentioned above.Be written into lock 720 and 722 respectively via isolating valve 724 and 726 and be connected with vacuum chamber 710.Box or wafer transfer box (FOUPs) 730 or 732 (wherein each box is all keeping a plurality of semiconductor crystal wafers) is placed on each and is written on lock 720 and 722.
During operation, with first robot 712 with wafer by removing in the wafer transfer box (FOUP) 730 and this wafer being placed on the transfer station 716.Transfer station 716 comprises a wafer and props up a part and a position sensor, and it determines displacement error and the rotation error of this wafer with respect to each reference value.Need to make wafer to rotate during location sensing on the typical case with respect to this sensor.Rotation error is propped up the suitable rotation of part on transfer station 716 by wafer and is revised.Then, this wafer is transferred to dull and stereotyped combination 718 by second robot 714, and must do suitable adjustment to eliminate above-mentioned displacement error this moment.After handling, this wafer is got back in the wafer transfer box (FOUP) 730 by first robot 712.
As mentioned above, the wafer disposal system can make wafer relocate so that the zones of different of wafer is exposed, so that implant via the aperture in the light shield.This can be by wafer being moved to this transfer station 716 by flat board combination 718 and this wafer rotation one predetermined amount being reached.Aperture in this example in this light shield is a kind of 90 ° fan-shaped, and this transfer station 716 all can be with this wafer half-twist after each the implantation.Then, this wafer is got back to flat board combination 718 so that come zones of different is implanted via the aperture in the light shield.Therefore, this transfer station 716 carries out the function that wafer relocates.
What one of wafer disposal system (its a part of formation eighth embodiment of the present invention) had been simplified is diagrammatically shown among Figure 10.The wafer disposal system can be pattern shown in Figure 9 usually, and it as mentioned above.As shown in figure 10, can be loaded into first with a plurality of wafers 830 that are about to handle is written in the lock 800, a plurality of light shields 832 can be loaded into second and be written in the lock 802, and first robot 810 removes wafer 830 and this wafer 830 is placed on the transfer station 820 of directed usefulness by being written in the lock 800.Then, this wafer transfer is on dull and stereotyped 822.Second robot 812 will have the light shield 832 in aperture 834 by being written into the transfer station 820 that lock 802 moves to this orientation usefulness.Then, light shield 832 is transferred to dull and stereotyped 822 and align with wafer 830 and placing, as mentioned above.Then, come first district of wafer 830 is implanted with ion beam 836 via the aperture in the light shield 832 834.This light shield 832 can move to this transfer station that relocates usefulness 820 by flat board 822 after implanting, and this light shield 832 is got back to this flat board 822 and implanted with second district to this wafer then.Another way is, this wafer 130 can move to the transfer station 820 of locating usefulness by dull and stereotyped 822 after implanting, and this light shield 832 is got back to this flat board 822 and implanted with second district to this wafer then.Repeat said process till implantation has been finished in the zone of having chosen of wafer 830.Then, other wafer can be written into to implant by being written into lock 800.Equally, has different aperture configurations and/or directed light shield can be written into by being written into lock 802.
The substrate shade device 900 of ninth embodiment of the invention is presented among Figure 11 and Figure 12.Figure 11 display base plate shade device 900, Figure 12 then show the substrate shade device 900 in the Ion Implantation Equipment.Substrate shade device 900 comprises: a dull and stereotyped combination 910, and it is being supported by scanning system 914; One light shield 920, it has aperture 922; And one light shield be written into mechanism 930.In each of Figure 11 and 12 was graphic, light shield 920 was presented in the shade position 960 in the dull and stereotyped combination 910 and also is presented in a kind of dull and stereotyped therewith combination 910 storage locations that separate 962.Will be understood that: this light shield 920 can only be on a position when arbitrary given time point in the system of reality.As shown in the figure, dull and stereotyped combination 910 is provided with light shield holding element 942, and light shield 920 is provided with finger 944 so that each light shield holding element 942 is engaged in this shade position.This finger 944 particularly can snap in (snap) light shield holding element 942.
Light shield is written into mechanism 930 and comprises: a transfer arm 950, and it has mask clips 952; An and drive system 954.As shown in the figure, this drive system 954 makes this transfer arm 950 that light shield 920 is moved between shade position 960 and storage location 962.Scanning system 914 can make dull and stereotyped combination 910 move up with respect to light shield 920, and the finger 944 on the light shield 920 is snapped in (snap) light shield holding element 942.
As shown in figure 12, substrate shade device 900 can be arranged in the shell 970 of the below, path that ion beam 972 crossed.When ion was implanted, scanning system 914 vertically was moved upward to flat board combination 910 and light shield 920 in the path of ion beam 972 and implants to carry out ion.The storage location 962 that light shield is written into mechanism 930 and light shield 920 is that the path by ion beam 972 is separated.
The calcspar of having simplified of the Ion Implantation Equipment of ninth embodiment of the invention is presented among Figure 13.Semiconductor crystal wafer 1020 is being supported by dull and stereotyped 1022 (for example, electrostatic wafer clamp or mechanical wafer clamp).Optical gate 1030 with aperture 1032 is installed in wafer 1020 the place aheads.Ion beam generator 1040 is directed to wafer 1020 with ion beam 1042.Ion beam 1042 can be a kind of silk ribbon shape ion beam, and its width diameter as wafer 1020 at least is big.Ion beam 1042 can also be that a kind of ion beam (scanning in one dimension or two dimension) maybe can also be a kind of fixing ion beam.Mechanical scan machine 1044 can make wafer 1020 move in one dimension or two-dimensional space according to the framework of the configuration of ion beam 1042 and Ion Implantation Equipment, so that ion beam 1042 is distributed on the surface of wafer 1020.
As shown in figure 13, Ion Implantation Equipment can comprise in addition: a shutter positions controller 1050, and it controls the position of this optical gate 1030 with respect to ion beam 1042; One aperture controller 1052, it controls the operation in this aperture 1032; And an implant controller 1054, it controls the integrated operation of this Ion Implantation Equipment.Will be understood that it is among the controllable embodiment that shutter positions controller 1050 uses in the position of optical gate 1030, and aperture controller 1052 uses in the 1032 controllable embodiment of aperture.In various embodiment, can by the control of optical gate 1030, wafer 1020 with respect to optical gate 1030 move or this two combination comes each zone of having chosen of this wafer 1020 is implanted.Mechanical scan machine 1044, shutter positions controller 1050 and aperture controller 1052 can be controlled to carry out desired implantation by implant controller 1054.
The perspective view of the processing control apparatus of tenth embodiment of the invention is presented among Figure 14.Processing control apparatus 1100 comprises dull and stereotyped combination 1110, and it is used for supporting the substrate (for example, semiconductor crystal wafer 1112) of a kind of processing (for example, implant by ion carry out) usefulness.Dull and stereotyped combination 1110 is being supported by one scan system 1114.Processing control apparatus 1100 comprises again in addition: an optical gate 1120, and it has aperture 1122; An and bulb 1130.In the embodiment of Figure 14, this optical gate 1120 of bulb 1130 may command is with respect to the position of wafer 1112 or control this aperture 1122, or controls this two.
During operation, bulb 1130 is positioned at this optical gate 1120 the place ahead of wafer 1112 and a kind of desired size, shape and position is set in this aperture 1122.With wafer disposal system shown in Figure 9 this wafer 1112 is loaded in the dull and stereotyped combination 1110, as mentioned above.Then, can be via aperture 1122 to use this wafer 1112 and implant or to carry out other processing.Wafer 1112 is implanted in first district that aperture 1122 is defined.Second district of wafer 1112 can a kind of of multitude of different ways implant, and this is to decide according to the configuration of this system.In a kind of therein mode, can adjust, aperture 1122 be moved coming via the aperture that relocates second district of this wafer 1112 is exposed optical gate 1120.In another kind of mode, as mentioned above, for example can come this wafer 1112 is reorientated by the finder of the some that belongs to the wafer disposal system.After had all implanted in each zone of having chosen of wafer, removable this wafer 1112 and a new wafer can be loaded in the dull and stereotyped combination 1110.
The calcspar of having simplified of the Ion Implantation Equipment of eleventh embodiment of the invention is presented among Figure 15.Semiconductor crystal wafer 1220 is being supported by dull and stereotyped 1222 (for example, electrostatic wafer clamp or mechanical wafer clamp).Optical gate 1030 with aperture 1032 is installed in wafer 1020 the place aheads.Ion beam modifier 1230 is installed in the place ahead of wafer 1220.Ion beam generator 1240 is with on the ion beam 1242 guiding wafers 1220.Ion beam 1242 can be a kind of silk ribbon shape ion beam, and its width diameter as wafer 1220 at least is big.Ion beam 1242 also can be a kind of ion beam (scanning in one dimension or two dimension) or also can be a kind of fixing ion beam.Mechanical scan machine 1244 can make wafer 1220 move in one dimension or two-dimensional space according to the framework of the configuration of ion beam 1242 and Ion Implantation Equipment, so that ion beam 1242 is distributed on the surface of wafer 1220.
Ion beam modifier 1230 is assembled into and can revises ion beam 1242, and ion beam 1242 can be implanted this wafer 1220 in the zone that one or more has been chosen and can not implant this wafer 1220 in other zone.In one embodiment, ion beam modifier 1230 can be a kind of mechanical type ion beam interceptor, and it moves in the path of ion beam 1242 during the implantation of having chosen.In another embodiment, ion beam modifier 1230 is a kind of electrostatic or magnetic deflectors, but its activation during the implantation of having chosen (energized) so that ion beam 1242 by wafer 1220 deflection.Ion Implantation Equipment more comprises an ion beam Correction and Control device 1250 and an implant controller 1254.
When operation, this implant controller 1254 is controlled a mechanical scan machine 1244 during implanting, so that ion beam 1242 is distributed on the wafer 1220.During the specific time point of some during implanting, this implant controller 1240 can order ion beam Correction and Control device 1250 to arrive wafer 1220 to forbid ion beam 1242, and this for example can or make this ion beam 1242 be reached by wafer 1220 deflections by this ion beam 1242 of blocking-up.So this processing process of may command is implanted with the zone of having chosen to this wafer 1220.
At least one embodiment of the present invention is described multiple aspect, will be understood that those of ordinary skill in the art can do various variations, modification and improvement.These change, revise and improvement is a part of of the content that disclosed and is within the spirit and scope of the present invention.Therefore, above-mentioned description and graphic just for example.
Claims (46)
1. a substrate shade device comprises;
One dull and stereotyped combination, it is supporting the substrate of a processing usefulness;
One light shield, it has a kind of aperture;
One maintaining body, it remains in the shade position light shield; And
One location mechanism, it changes the relative position of described light shield and substrate, to come the zones of different of substrate is exposed via the aperture in the light shield.
2. substrate shade device as claimed in claim 1 is characterized in that, described maintaining body is attached to this flat board combination.
3. substrate shade device as claimed in claim 1 is characterized in that, described maintaining body is attached to one and is supporting and should make up used scanning system by flat board.
4. substrate shade device as claimed in claim 1 is characterized in that described maintaining body and light shield comprise a plurality of elements that engage one another.
5. substrate shade device as claimed in claim 1 is characterized in that, described maintaining body comprises a kind of electrostatic folder that is associated with this flat board combination.
6. substrate shade device as claimed in claim 1 is characterized in that described maintaining body can manually be operated.
7. substrate shade device as claimed in claim 1 is characterized in that, described light shield is circular and has a kind of fan-shaped opening.
8. substrate shade device as claimed in claim 1 is characterized in that described light shield is to separate with substrate, to allow substrate to be loaded into that plate pack is closed or in the plate pack unloading of closing.
9. substrate shade device as claimed in claim 1 is characterized in that described substrate is reorientated, to come the zones of different of substrate is exposed via the aperture in the light shield.
10. substrate shade device as claimed in claim 1 is characterized in that described light shield is reorientated, to come the zones of different of substrate is exposed via the aperture in the light shield.
11. substrate shade device as claimed in claim 1 is characterized in that described detent mechanism comprises a substrate orientation device and a transfer device, it moves to substrate dull and stereotyped combination and substrate orientation device and substrate is moved between flat board combination and substrate orientation device.
12. substrate shade device as claimed in claim 1 is characterized in that, also comprises a light shield and is written into mechanism, so that light shield is loaded on the maintaining body.
13. substrate shade device as claimed in claim 1 is characterized in that, also comprises a light shield and is written into mechanism, light shield is transferred to shade position and non-shade position and light shield is shifted between shade position and non-shade position.
14. substrate shade device as claimed in claim 13 is characterized in that, described light shield is written into mechanism as this maintaining body.
15. substrate shade device as claimed in claim 14 is characterized in that, described light shield is written into mechanism as this detent mechanism.
16. substrate shade device as claimed in claim 13 is characterized in that, described light shield is written into mechanism and comprises a transfer arm and a driving combination, and it moves described transfer arm between shade position and non-shade position.
17. substrate shade device as claimed in claim 1 is characterized in that, also comprises a substrate and disposes mechanism, it is loaded into substrate, and this plate pack is closed or make up unloading by this flat board.
18. substrate shade device as claimed in claim 17 is characterized in that, described substrate is disposed mechanism and is loaded into light shield on this maintaining body or by this maintaining body unloading.
19. the processing method of a substrate, it comprises:
Light shield with aperture is located with respect to substrate, first district of substrate is exposed coming via the aperture;
Come first district of described substrate is handled via the aperture in the light shield;
The relative position of light shield and substrate is changed, second district of substrate is exposed coming via the aperture; And
Come second district of described substrate is handled via the aperture in the light shield.
20. the processing method of substrate as claimed in claim 19 is characterized in that, first district and second district that handle described substrate comprise that first district and second district to described substrate carry out the ion implantation.
21. the processing method of substrate as claimed in claim 20, it is characterized in that, first district of described substrate and second district are carried out comprising when ion is implanted: first district carry out that ion is implanted and the time point of second district when carrying out the ion implantation between make at least one ion implantation parameter change.
22. the processing method of substrate as claimed in claim 19 is characterized in that, comprises when light shield is located with respect to substrate: make substrate orientation on a flat board and light shield is positioned in the shade position.
23. the processing method of substrate as claimed in claim 22 is characterized in that, comprises when the relative position of light shield and substrate is changed: make substrate move to a finder, rotate described substrate and described substrate is moved to this flat board by finder.
24. an Ion Implantation Equipment comprises:
One ion beam generator, it is used for producing ion beam;
One dull and stereotyped combination, it is used for supporting substrate when ion is implanted;
One light shield, it has the aperture;
One light shield is written into mechanism, and it moves to a shade position with light shield;
One maintaining body, it remains in the shade position light shield; And
One location mechanism, the relative position that it changes described light shield and substrate makes ion beam come first district and second district of substrate are implanted via the aperture in the light shield.
25. the processing method of a substrate, it comprises:
Handle the zones of different of a substrate with different process parameter values.
26. the processing method of substrate as claimed in claim 25 is characterized in that, handles different zones and comprises: come that with different implantation parameter values a kind of zones of different of semiconductor crystal wafer is carried out ion and implant.
27. the processing method of substrate as claimed in claim 26 is characterized in that, the implantation of zones of different comprises; Come wafer is implanted via the light shield with aperture, the zone that is about to implantation has been defined in described aperture.
28. the processing method of substrate as claimed in claim 27 is characterized in that, comes to comprise when wafer implanted via light shield: light shield is changed with respect to the orientation of wafer, implant to carry out ion so that the zones of different of described wafer exposed.
29. the processing method of substrate as claimed in claim 27 is characterized in that, comprises when coming wafer implanted via light shield: light shield is changed, implant to carry out ion so that the zones of different of described wafer exposed.
30. the processing method of substrate as claimed in claim 27 is characterized in that, comprises that more with the substrate disposer light shield and wafer to be moved to one dull and stereotyped or shifted out by a flat board.
31. the processing method of substrate as claimed in claim 30 is characterized in that, also comprises with the substrate disposer making this light shield change over different light shields.
32. the processing method of substrate as claimed in claim 30 is characterized in that, also comprises with the substrate disposer making light shield with respect to the orientation of wafer and change.
33. an ion implantation device, it comprises:
One process chamber;
One ion beam generator, it is used for producing ion beam;
One maintaining body, it is used for supporting substrate in process chamber; And
One implants control element, and it is being controlled ion and is implanting, and the zones of different of substrate is implanted with different implantation parameter values.
34. ion implantation device as claimed in claim 33 is characterized in that, described implantation control element comprises a light shield, and it is positioned at the place ahead of substrate, and described light shield has an aperture to define the zone that is about to implantation of described substrate.
35. ion implantation device as claimed in claim 34 is characterized in that, also comprises a substrate disposer, it makes light shield and substrate move to this maintaining body or is shifted out by this maintaining body.
36. ion implantation device as claimed in claim 35 is characterized in that, described substrate disposer is assembled into light shield is changed, to define the zones of different that is about to implantation of described substrate.
37. ion implantation device as claimed in claim 35 is characterized in that, described substrate disposer is assembled into light shield is changed with respect to the orientation of substrate, to define the zones of different that is about to implantation of described substrate.
38. ion implantation device as claimed in claim 34 is characterized in that, described maintaining body comprises a plurality of keepers, so that the spatial relationship of light shield with respect to substrate positioned.
39. ion implantation device as claimed in claim 33 is characterized in that, described implantation control element comprises a kind of optical gate that is positioned between ion beam generator and this maintaining body, and described optical gate has an aperture so that ion beam passes through.
40. ion implantation device as claimed in claim 39 is characterized in that, described optical gate is removable.
41. ion implantation device as claimed in claim 39 is characterized in that, the aperture in the described optical gate can be adjusted.
42. ion implantation device as claimed in claim 39 is characterized in that, the aperture in the described optical gate can be closed.
43. ion implantation device as claimed in claim 39 is characterized in that, the big I in the aperture in the described optical gate increases so that ion beam by and ion beam is in fact changed.
44. ion implantation device as claimed in claim 33 is characterized in that, described implantation control element comprises a kind of ion beam modifier, its when implanting selected during in be used for revising ion beam.
45. ion implantation device as claimed in claim 44 is characterized in that, described ion beam modifier comprises a kind of ion beam interceptor, and it is movable in the path of ion beam or shifts out in the path by ion beam.
46. ion implantation device as claimed in claim 44 is characterized in that, described ion beam modifier comprises a kind of ion beam deflector, ion beam is departed from during its some when implanting by substrate.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US66042005P | 2005-03-09 | 2005-03-09 | |
| US60/660,420 | 2005-03-09 | ||
| US11/329,761 | 2006-01-11 |
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| Publication Number | Publication Date |
|---|---|
| CN101138080A true CN101138080A (en) | 2008-03-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006800075139A Pending CN101138080A (en) | 2005-03-09 | 2006-03-09 | Methods and apparatus for enabling multiple process steps on a single substrate |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102473576A (en) * | 2009-07-30 | 2012-05-23 | 株式会社日立高新技术 | Ion milling device |
| CN104011826A (en) * | 2011-11-02 | 2014-08-27 | 瓦里安半导体设备公司 | High-throughput ion implanter |
| CN105609398A (en) * | 2014-11-17 | 2016-05-25 | 汉辰科技股份有限公司 | Ion implanter and ion implantation method |
| CN105765693A (en) * | 2013-10-22 | 2016-07-13 | 瓦里安半导体设备公司 | Dual mode ion implanter |
| CN111243926A (en) * | 2018-11-29 | 2020-06-05 | 江苏鲁汶仪器有限公司 | Carrying platform system |
-
2006
- 2006-03-09 CN CNA2006800075139A patent/CN101138080A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102473576A (en) * | 2009-07-30 | 2012-05-23 | 株式会社日立高新技术 | Ion milling device |
| CN104011826A (en) * | 2011-11-02 | 2014-08-27 | 瓦里安半导体设备公司 | High-throughput ion implanter |
| US9437392B2 (en) | 2011-11-02 | 2016-09-06 | Varian Semiconductor Equipment Associates, Inc. | High-throughput ion implanter |
| CN104011826B (en) * | 2011-11-02 | 2017-06-23 | 瓦里安半导体设备公司 | Ion Implantation Equipment and ionic-implantation |
| CN105765693A (en) * | 2013-10-22 | 2016-07-13 | 瓦里安半导体设备公司 | Dual mode ion implanter |
| CN105765693B (en) * | 2013-10-22 | 2017-09-08 | 瓦里安半导体设备公司 | Ion implanter and its operating method, the system for carrying out dual-mode operation wherein |
| CN105609398A (en) * | 2014-11-17 | 2016-05-25 | 汉辰科技股份有限公司 | Ion implanter and ion implantation method |
| CN111243926A (en) * | 2018-11-29 | 2020-06-05 | 江苏鲁汶仪器有限公司 | Carrying platform system |
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Application publication date: 20080305 |