TWI583037B - Oled plane with function of heat dissipation and method for manufacture of the same - Google Patents

Description

OLED backboard with heat dissipation function and manufacturing method

The invention relates to an OLED backplane with heat dissipation function and a manufacturing method thereof, in particular to a bottom-emitting OLED component which can not only lower the temperature but also avoid the decline of component use efficiency when used in high-brightness operation. The carbon nanotube used can be directly used as the heat dissipation back plate of the bottom emission type OLED element, and the heat dissipation function OLED back plate and the manufacturing method thereof can be used in the whole implementation without additional processing Innovative designer.

Press, Organic Light Emitting Display (OLED) is a new choice for lighting applications in addition to LEDs. The organic light-emitting diodes are light and thin, flexible, easy to carry, high brightness, and low cost. Low power, self-illumination without backlight, high contrast, wide viewing angle, fast response, etc. However, due to the high-brightness use of the organic light-emitting diode, the Joule heat of the organic light-emitting diode causes the efficiency to decrease, thereby producing The problem of the service life of the organic light-emitting diode is reduced, so that the heat dissipation of the organic light-emitting diode is an important issue in addition to the operation of the organic light-emitting diode to reduce the heat generated by the low driving current. .

Among them, the heat dissipation structure design of the organic light emitting diode is generally used, which uses a metal (such as copper, stainless steel, etc.) substrate or a germanium substrate to improve the heat dissipation characteristics of the organic light emitting diode, thereby extending the organic light emitting. The service life of the diode.

According to the research, it is pointed out that the upper-emitting organic light-emitting diode element (Top-emission OLED) is fabricated by using a glass substrate, a stainless steel substrate, and a germanium substrate, and the component is packaged by the groove cover + moisture absorbent. High thermal conductivity [150W/m.] under the same organic light-emitting diode structure. The 矽 substrate of K] has the best component heat distribution, and the glass with the least thermal conductivity (1W/m.K) has a luminance of 100,000 cd/m ² , and the component temperature rises from 20 ° C to the maximum temperature after 180 s of operation time. 64.5 ° C [see Table 1]; in addition, the life of the component is reduced from 198 h of the substrate to 96 h of the stainless steel substrate, while the glass substrate with the worst heat dissipation is only 31 h (see Table 2). The good substrate heat dissipation mechanism shown in this study can indeed improve the life of the component.

However, although the metal substrate or the germanium substrate of the above organic light-emitting diode can achieve the expected effect of improving the heat dissipation characteristics, it is also found in the practical application that the surface roughness of the metal substrate is high, and will be used during use. The high current at the tip of the product area causes the light-emitting efficiency and service life of the organic light-emitting diode to occur, and the germanium substrate has a problem of high cost and is limited by the current maximum size of the germanium wafer. It is 12 吋, which also limits the development of the organic light-emitting diode to large-scale, so that there is still room for improvement in the overall structural design.

In view of this, the inventor has provided many years of experience in the design and development of the relevant industries and the actual production experience, and has researched and improved the existing structure and defects to provide an OLED backplane and manufacturing method with heat dissipation function, in order to achieve more. The purpose of good practical value.

The main object of the present invention is to provide an OLED backplane with a heat dissipation function and a manufacturing method thereof, which mainly enable a bottom-emitting OLED device to operate at high brightness. When used, not only can the temperature be lowered, but also the degradation of component use efficiency can be avoided. At the same time, the carbon nanotube used can be directly used as the heat dissipation back plate of the bottom-emitting OLED element without additional processing, but in its entirety. Those who use more practical and effective features are used.

The main purpose and effect of the method for manufacturing the OLED backsheet having the heat dissipation function are achieved by the following specific technical means: A. providing a substrate; B. depositing a nickel film on the substrate; C. The nickel film is treated with nitrogen plasma to form nickel particles; D. the collimated carbon nanotubes are deposited on the nickel particle substrate by Electron Cyclotron Resonator-Chemical Vapor Deposition (ECR-CVD). Carbon Nanotube, CNT]; E. covering the cathode layer of the bottom emission type OLED element with a protective layer to avoid deterioration of the cathode and the organic layer; F. the substrate having the collimated carbon nanotube and the bottom emission type OLED The components are in contact to achieve heat dissipation.

A preferred embodiment of the method for fabricating an OLED backsheet having a heat dissipation function, wherein the nickel film has a thickness of 3 to 5 nm.

Preferred implementation of the method for manufacturing OLED backsheet with heat dissipation function of the present invention For example, the nickel particles have a diameter of 20-40 nm.

A preferred embodiment of the method for fabricating an OLED backsheet having a heat dissipation function, wherein, when depositing the collimated carbon nanotube, the mixed gas used is methane/nitrogen, and the mixing ratio is 1:1.

A preferred embodiment of the method for fabricating an OLED backsheet having a heat dissipation function, wherein a process pressure of 1 × 10 ^-2 torr is used when depositing a collimated carbon nanotube.

A preferred embodiment of the method for fabricating an OLED backsheet having a heat dissipation function, wherein the collimated carbon nanotube has a length of > 4 μm .

A preferred embodiment of the method for fabricating an OLED backsheet having a heat dissipation function, wherein the collimated carbon nanotube has a density of 5 × 10 ⁷ to 10 × 10 ⁷ CNTs / mm ² .

A preferred embodiment of the method for fabricating an OLED backsheet having a heat dissipation function, wherein a protective thickness of the cathode layer of the bottom-emitting OLED device is 10 to 100 nm.

The main purpose and effect of the OLED backplane with heat dissipation function of the present invention are achieved by the following specific technical means: the OLED backplane having a heat dissipation function is formed by the method.

(1) ‧‧‧Substrate

(2) ‧ ‧ deposition of collimated carbon nanotubes

(3) ‧‧‧Bottom-emitting OLED components

(4) ‧‧‧UV frame glue

First: Schematic diagram of the manufacturing method of the present invention

Second figure: schematic diagram of the structure of the present invention

For a more complete and clear disclosure of the technical content, the purpose of the invention and the effects thereof achieved by the present invention, the following is a detailed description, and please refer to the drawings and drawings: First, please refer to 1 is a schematic view of a manufacturing method of the present invention and a second schematic view showing the structure of the present invention. The present invention mainly comprises the following steps: A. providing a substrate (1), which can be adapted to different needs. Selecting a germanium substrate, a glass substrate, a quartz substrate, etc.; B. depositing a catalytic layer of nickel on the substrate (1) to form a nickel thin film, the method of depositing the catalytic layer is physical vapor deposition, the thickness of the catalytic layer is The density of the carbon nanotubes is related, and the thickness of the catalytic layer can be 3 to 5 nm; C. The nickel film on the substrate (1) is treated with nitrogen plasma to form nickel particles, and the treatment process is to pass nitrogen gas as a reaction gas. After bombarding the nickel film with nitrogen plasma, 20-40 nm nickel particles will be formed on the substrate, which can improve the diffusion ability of carbon atoms in the carbon source gas; D. Electron cyclotron resonance chemical vapor deposition on the nickel particle substrate [Electron Cyclotron Resonator-Chemical Vapo r Deposition, ECR-CVD] deposits a carbon nanotube (CNT) (2), and the carbon source gas is methane and assisted by nitrogen to dissociate and diffuse methane, nitrogen and nitrogen. The ratio is 1:1, and the process pressure is 1×10 ^-2 torr. In order to reduce the proportion of amorphous carbon, the substrate (1) is placed in the reverse direction, that is, the nickel catalyst particles face down, and the reaction gas is diffused. Arriving at the substrate (1), the deposited collimated carbon nanotube (2) is a multi-walled carbon nanotube, has a growth temperature of 500 ° C, a length of > 4 μ m, and a density of about 5 × 10 ⁷ to 10 × 10 ⁷ CNTs/mm ² , but preferably 10×10 ⁷ CNTs/mm ² ; E. The cathode layer of the bottom-emitting OLED element (3) is covered with a protective layer to avoid deterioration of the cathode and the organic layer, and the thickness of the protective layer is 10-100 nm, and the bottom-emitting OLED element (3) is fabricated by using ITO glass as a substrate, and sequentially depositing a hole transport layer/light emitting layer/electron transport layer/cathode metal/protective layer, wherein the protective layer can be Avoiding deterioration of the cathode and the organic layer when the upper and lower substrates are attached; F. the substrate (1) having the collimated carbon nanotube (2) and the bottom-emitting OLED element (3) in contact to achieve the effect of heat, and the substrate (1) with the bottom emission type OLED device (3) places a gap UV sealant (4) sealing.

According to the above manufacturing method, it is known that the collimated carbon nanotubes (2) are grown on different substrates (1) under the same process power, temperature, and time conditions, and observed by a scanning electron microscope (SEM). Referring to Table 3, it can be seen that the collimated carbon nanotubes (2) grown on the ruthenium substrate (1) are more evenly distributed, and the collimated carbon nanotubes (2) grown on the glass substrate (1) are more dispersed. , growing in 40 minutes The collimated carbon nanotube (2) has a length of about 4.3 to 4.5 μm on the ruthenium substrate (1), which is dense and straight, and the collimated carbon nanotubes grown on the glass substrate (1) (2) The length is about 3.3~3.7μm, and the length of the collimated carbon nanotubes (2) varies greatly and is less dense.

In addition, when using different lengths of collimated carbon nanotubes (2), the length of 1 μm, 2 μm, and 4 μm are respectively grown on the ruthenium substrate (1), and sealed in the bottom-emitting OLED device (3), and a voltage of 9 V is applied. , 24000 cd/m ² , and an infrared temperature sensor, adjust the appropriate focal length for 3 minutes to continuously measure the bottom-emitting OLED element (3) and record the temperature change when it is bright, observe the temperature change, on the 矽 substrate (1) No matter how long the collimated carbon nanotubes (2) are, the temperature rise is obvious at the beginning. After 1 minute, the temperature rise is slow and stable, and the collimated carbon nanotubes of different lengths (2) are in the same parameters. Under the condition of measurement, it is found that the longer the length of the collimated carbon nanotube (2), the heat dissipation effect is better than the heat dissipation result, the heat dissipation effect is from high to low: length 4μm>2μm> The final temperature of 1μm, 1μm and 2μm length of carbon nanotubes is about 1 °C, and the longest 4μm carbon nanotubes have a temperature difference of about 5 °C. For temperature rise, please refer to Table 4, after 3 After the minute measurement, the 1 μm length carbon nanotubes were increased by 6.4 ° C, while the length was 2 μm. The temperature of the carbon nanotubes was increased by 6.1 °C; the carbon nanotubes of 4 μm length increased by only 1.8 °C after 3 minutes.

In this way, the present invention can be used in operation, and during the illuminating process of the bottom-emitting OLED element (3), the crystallization property of the deposited collimated carbon nanotube (2) can be utilized to have extremely large crystals. The vibration free path can make the energy transfer through the lattice vibration behavior to achieve the best heat conduction function, with excellent heat dissipation effect, can effectively reduce the bottom emission type OLED element (3) temperature from 60 ° C Drop to 30 ° C.

From the above, the implementation description of the present invention shows that the present invention has the following advantages in comparison with the prior art means:

1. The present invention can be integrated with the current bottom-emitting OLED device manufacturing technology, so that the bottom-emitting OLED device can not only lower the temperature of the bottom-emitting OLED device but also avoid the bottom-emitting type when used in high-brightness operation. The decline in the efficiency of use of OLED components.

2. The carbon nanotube used in the present invention is synthesized by ECR-CVD, and has high collimation and high purity, so that it can be directly used as the bottom emission type O. The heat-dissipating backplane of the LED components requires no additional processing.

However, the above-described embodiments or drawings are not intended to limit the structure or the use of the present invention, and any suitable variations or modifications of the invention will be apparent to those skilled in the art.

In summary, the embodiments of the present invention can achieve the expected use efficiency, and the specific structure disclosed therein has not been seen in similar products, nor has it been disclosed before the application, and has completely complied with the provisions of the Patent Law. And the request, the application for the invention of a patent in accordance with the law, please forgive the review, and grant the patent, it is really sensible.

Claims (9)

The invention discloses a method for manufacturing an OLED backsheet with heat dissipation function, which mainly comprises the following steps: A. providing a substrate; B. depositing a nickel film on the substrate; C. forming the nickel film on the substrate by nitrogen plasma treatment Nickel particles; D. depositing a collimated carbon nanotube (CNT) on the nickel particle substrate by Electron Cyclotron Resonator-Chemical Vapor Deposition (ECR-CVD); Covering a cathode layer of the bottom emission type OLED element with a protective layer to prevent deterioration of the cathode and the organic layer; F. contacting the substrate with one side of the collimated carbon nanotube with the protective layer of the bottom emission type OLED element Achieve the effect of heat dissipation. The method for manufacturing an OLED back sheet having a heat dissipation function according to claim 1, wherein the nickel film has a thickness of 3 to 5 nm. The OLED back sheet manufacturing method according to claim 1, wherein the nickel particles have a diameter of 20-40 nm. The method for manufacturing an OLED backsheet having a heat dissipation function according to claim 1, wherein the mixed gas used for depositing the collimated carbon nanotube is methane / Nitrogen, the mixing ratio is 1:1. The method for manufacturing an OLED back sheet having a heat dissipation function according to claim 1, wherein a process pressure of 1×10 ⁻² torr is used when depositing the collimated carbon nanotube. The method for manufacturing an OLED backsheet having a heat dissipation function according to claim 1, wherein the collimated carbon nanotube has a length of >4 μm . The OLED back sheet manufacturing method according to claim 1, wherein the collimated carbon nanotube has a density of 5×10 ⁷ to 10×10 ⁷ CNTs/mm ² . The OLED backplane manufacturing method of claim 1, wherein the bottom layer of the bottom-emitting OLED device has a protective thickness of 10 to 100 nm. An OLED backplane having a heat dissipating function, comprising the method according to any one of claims 1 to 9, wherein the OLED backplane having a heat dissipating function is formed by the method.