TWI579404B - Gas distribution plate - Google Patents

Gas distribution plate Download PDF

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TWI579404B
TWI579404B TW104126554A TW104126554A TWI579404B TW I579404 B TWI579404 B TW I579404B TW 104126554 A TW104126554 A TW 104126554A TW 104126554 A TW104126554 A TW 104126554A TW I579404 B TWI579404 B TW I579404B
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gas
gas distribution
plate
distribution plate
plate body
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TW104126554A
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Chinese (zh)
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TW201706442A (en
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曹承育
張志平
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精曜有限公司
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Description

氣體分佈板 Gas distribution plate

本發明是有關於一種薄膜沈積系統的氣體噴灑裝置,且特別是有關於一種能使氣體均勻地噴出的氣體分佈板。 The present invention relates to a gas spraying device for a thin film deposition system, and more particularly to a gas distribution plate capable of uniformly ejecting a gas.

在習知的薄膜沈積系統中,一種薄膜沈積形式為將反應源以氣體形式輸送進到反應腔室中,經由氧化、還原或與工件反應之方式進行化學反應,其生成物藉內擴散作用而沈積於工件表面上。 In a conventional thin film deposition system, a thin film deposition form is a method in which a reaction source is transported as a gas into a reaction chamber, and a chemical reaction is performed by oxidation, reduction or reaction with a workpiece, and the product is diffused by internal diffusion. Deposited on the surface of the workpiece.

在反應腔室中,通常會使用氣體分佈板載流氣體均勻地噴灑於反應腔室中,以在被加熱的工件上面發生化學反應來進行薄膜成長。為了將氣體分佈板的溫度控制在可操作的溫度範圍,常會使用冷卻系統來將氣體分佈板冷卻。常見的方式為藉由將冷卻管道設置於氣體分佈板中來加以冷卻,而冷卻管道的設計方式對於載流氣體的流場與沈積薄膜的均勻度有著相當大的影響。 In the reaction chamber, a gas distribution plate carrier gas is usually uniformly sprayed into the reaction chamber to cause a chemical reaction on the heated workpiece to perform film growth. In order to control the temperature of the gas distribution plate to an operable temperature range, a cooling system is often used to cool the gas distribution plate. A common way is to cool the cooling duct by placing it in a gas distribution plate, which is designed to have a considerable influence on the flow field of the carrier gas and the uniformity of the deposited film.

一般來說,冷卻管道會以突出於氣體分佈板的方式設置在氣體分佈板的靠近工件的表面上。然而,在此設計下,通過氣體分佈板進入反應腔室中的載流氣體常會因為突出於氣體分佈板 的冷卻管道而導致氣體分佈板與工件之間的流場受到干擾,進而影響到被加熱的工件上面所沈積薄膜的均勻性。 Generally, the cooling duct is disposed on the surface of the gas distribution plate close to the workpiece in such a manner as to protrude from the gas distribution plate. However, under this design, the carrier gas entering the reaction chamber through the gas distribution plate often protrudes from the gas distribution plate. The cooling duct causes the flow field between the gas distribution plate and the workpiece to be disturbed, thereby affecting the uniformity of the deposited film on the heated workpiece.

因此,在化學氣相沈積的反應過程中,如何均勻地噴灑載流氣體便成為重要的問題。 Therefore, how to uniformly spray the carrier gas during the chemical vapor deposition reaction becomes an important problem.

本發明提供一種氣體分佈板,其包括板體以及蓋板。板體具有進氣面以及與所述進氣面相對的噴灑面。所述板體中具有冷卻管道與多個氣體管道,其中所述氣體管道貫穿所述板體且包括位於所述進氣面處的進氣口以及位於所述噴灑面處的出氣口,所述冷卻管道由所述進氣面暴露且包括入口與出口。蓋板固接於所述板體以密封所述冷卻管道,其中冷卻流體在所述冷卻管道中自所述入口流向所述出口。 The present invention provides a gas distribution plate comprising a plate body and a cover plate. The plate body has an intake surface and a spray surface opposite the inlet surface. The plate body has a cooling duct and a plurality of gas pipes, wherein the gas pipe runs through the plate body and includes an air inlet at the intake surface and an air outlet at the spray surface, A cooling duct is exposed by the inlet face and includes an inlet and an outlet. A cover plate is secured to the plate body to seal the cooling duct, wherein a cooling fluid flows from the inlet to the outlet in the cooling duct.

在本發明的一實施例中,所述蓋板以焊接的方式與所述板體固接。 In an embodiment of the invention, the cover plate is fixed to the plate body by welding.

在本發明的一實施例中,所述蓋板的材料與所述板體的材料相同。 In an embodiment of the invention, the material of the cover plate is the same as the material of the plate body.

在本發明的一實施例中,所述氣體管道具有不同的孔徑。 In an embodiment of the invention, the gas conduits have different pore sizes.

在本發明的一實施例中,所述氣體管道具有相同的孔徑。 In an embodiment of the invention, the gas conduits have the same pore size.

在本發明的一實施例中,所述冷卻流體包括水或矽膠油。 In an embodiment of the invention, the cooling fluid comprises water or silicone oil.

基於上述,本發明藉由將冷卻管道設置於氣體分佈板的板體的進氣面處,因此在載流氣體通過氣體分佈板而由出氣口噴 出時,不會受到冷卻管道或冷卻管道的周邊裝置所干擾,可避免氣流與熱能的傳遞受到干擾,且因此可使所沈積的薄膜具有優良的均勻度。 Based on the above, the present invention provides a cooling duct to the intake surface of the plate body of the gas distribution plate, so that the carrier gas passes through the gas distribution plate and is sprayed by the gas outlet port. When it is out, it is not disturbed by the peripheral means of the cooling duct or the cooling duct, and the transmission of the airflow and the thermal energy is prevented from being disturbed, and thus the deposited film can be excellent in uniformity.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。 The above described features and advantages of the invention will be apparent from the following description.

10‧‧‧板體 10‧‧‧ board

10a‧‧‧進氣面 10a‧‧‧Inlet surface

10b‧‧‧噴灑面 10b‧‧‧ spray surface

12‧‧‧氣體管道 12‧‧‧ gas pipeline

12a‧‧‧進氣口 12a‧‧‧air inlet

12b‧‧‧出氣口 12b‧‧‧ outlet

14‧‧‧冷卻管道 14‧‧‧Cooling pipe

14a‧‧‧入口 14a‧‧‧ Entrance

14b‧‧‧出口 14b‧‧‧Export

16‧‧‧蓋板 16‧‧‧ Cover

18‧‧‧接著物 18‧‧‧Subjects

20‧‧‧加熱板 20‧‧‧heating plate

22‧‧‧工件 22‧‧‧Workpiece

24‧‧‧氣流 24‧‧‧ airflow

100‧‧‧氣體分佈板 100‧‧‧ gas distribution board

200‧‧‧反應腔室 200‧‧‧reaction chamber

圖1A是依照本發明一實施例所繪示的氣體分佈板的剖面示意圖。 FIG. 1A is a schematic cross-sectional view of a gas distribution plate according to an embodiment of the invention.

圖1B是圖1A的氣體分佈板的俯視圖。 Figure 1B is a top plan view of the gas distribution plate of Figure 1A.

圖2是依照本發明一實施例所繪示的薄膜沈積系統的腔室內部的示意圖。 2 is a schematic diagram of the interior of a chamber of a thin film deposition system according to an embodiment of the invention.

本發明為有關於一種可用於薄膜沈積系統中且具有冷卻裝置的氣體分佈板。所使用的冷卻裝置可有效冷卻氣體分佈板,且不致於影響從氣體分佈板所噴出的氣體。此氣體分佈板可應用於有機化學氣相沈積(MOCVD)、電漿化學氣相沈積法(PECVD)、超高真空化學氣相沈積(UHVCVD)、原子層化學氣相沈積(ALCVD)等薄膜沈積方法,本發明對此並不特別限定。 The present invention is directed to a gas distribution plate that can be used in a thin film deposition system and has a cooling device. The cooling device used can effectively cool the gas distribution plate without affecting the gas ejected from the gas distribution plate. The gas distribution plate can be applied to thin film deposition such as organic chemical vapor deposition (MOCVD), plasma chemical vapor deposition (PECVD), ultra high vacuum chemical vapor deposition (UHVCVD), and atomic layer chemical vapor deposition (ALCVD). The method is not particularly limited in the present invention.

下文中參照隨附圖式來更充分地描述本發明實施例。然 而,本發明可以多種不同的形式來實踐,並不限於文中所述之實施例。以下實施例中所提到的方向用語,例如「上」、「下」、「前」、「後」、「內」、「外」等,僅是參考附加圖式的方向,因此使用的方向用語是用來詳細說明,而非用來限制本發明。此外,在圖式中為明確起見可能將各物件的尺寸以及相對尺寸作誇張的描繪。 Embodiments of the invention are described more fully hereinafter with reference to the accompanying drawings. Of course Rather, the invention can be practiced in many different forms and is not limited to the embodiments described herein. The directional terms mentioned in the following embodiments, such as "upper", "lower", "before", "after", "inside", "outside", etc., are only directions referring to the additional schema, so the direction of use The terminology is used to describe the invention in detail and not to limit the invention. In addition, the dimensions and relative dimensions of the various items may be exaggerated in the drawings for clarity.

圖1A是依照本發明一實施例所繪示的氣體分佈板的剖 面示意圖。圖1B是圖1A的氣體分佈板的俯視圖。請同時參照圖1A與圖1B,氣體分佈板100配置於薄膜沈積反應腔室(未繪示)中。氣體分佈板100包括板體10以及蓋板16。板體10具有進氣面10a以及相對於進氣面的10a的噴灑面10b。載流氣體經由板體10的進氣面10a進入板體10,且於板體10的噴灑面10b噴出。 板體10的材料包括金屬,例如鋁、銅、鋼或其組合。板體10的形狀可以如圖1B所示為方形的設計,但本發明不限於此。在其他實施例中,也可依照實際需求來設計板體10的形狀,例如可將板體10設計為圓形或不規則形狀。 1A is a cross-sectional view of a gas distribution plate according to an embodiment of the invention. Schematic diagram. Figure 1B is a top plan view of the gas distribution plate of Figure 1A. Referring to FIG. 1A and FIG. 1B simultaneously, the gas distribution plate 100 is disposed in a thin film deposition reaction chamber (not shown). The gas distribution plate 100 includes a plate body 10 and a cover plate 16. The plate body 10 has an intake surface 10a and a spray surface 10b with respect to the intake surface 10a. The carrier gas enters the plate body 10 via the intake surface 10a of the plate body 10, and is ejected from the spray surface 10b of the plate body 10. The material of the plate body 10 includes a metal such as aluminum, copper, steel or a combination thereof. The shape of the plate body 10 may be a square design as shown in FIG. 1B, but the present invention is not limited thereto. In other embodiments, the shape of the plate body 10 can also be designed according to actual needs. For example, the plate body 10 can be designed to be circular or irregular.

請繼續參照圖1A與圖1B,為了將載流氣體從反應源均勻的噴灑至反應腔室且確保氣體分佈板的溫度處於可操作的範圍,在板體10中設置了多個氣體管道12及冷卻管道14。 Referring to FIG. 1A and FIG. 1B, in order to uniformly spray the carrier gas from the reaction source to the reaction chamber and ensure that the temperature of the gas distribution plate is in an operable range, a plurality of gas pipes 12 are disposed in the plate body 10 and Cooling pipe 14.

氣體管道12主要用於傳遞載流氣體且將載流氣體均勻地分佈於反應腔室中。氣體管道12設置在板體10中,且貫穿板體10。氣體管道12包括位於進氣面10a處的進氣口12a以及位於噴灑面10b處的出氣口12b。在本實施例中,氣體管道12以陣列排 列的方式分佈於板體10中,但本發明不限於此。在其他實施例中,氣體管道12也可以是以任何有助於氣體均勻分佈於反應腔室中的方式分佈於板體10中。此外,在本實施例中,所有的氣體管道12具有相同的孔徑,但本發明不限於此。在其他實施例中,這些氣體管道12可具有不同的孔徑,且藉由使氣體流經具有不同孔徑的氣體管道12可達成所需的氣體分佈狀況。 The gas conduit 12 is primarily used to deliver carrier gas and distribute the carrier gas evenly throughout the reaction chamber. The gas pipe 12 is disposed in the plate body 10 and penetrates the plate body 10. The gas pipe 12 includes an intake port 12a at the intake face 10a and an air outlet 12b at the spray face 10b. In the present embodiment, the gas pipes 12 are arranged in an array. The manner of the columns is distributed in the panel 10, but the invention is not limited thereto. In other embodiments, the gas conduit 12 may also be distributed in the plate 10 in any manner that facilitates uniform distribution of gas throughout the reaction chamber. Further, in the present embodiment, all the gas pipes 12 have the same pore diameter, but the present invention is not limited thereto. In other embodiments, these gas conduits 12 can have different pore sizes and the desired gas distribution can be achieved by flowing gas through gas conduits 12 having different pore sizes.

冷卻管道14的主要作用為冷卻板體10。冷卻管道14設置在板體10中,且暴露於板體10的進氣面10a。如圖1A所示,冷卻管道14設置在板體10的上側(進氣面10a)處。冷卻管道14包括入口14a與出口14b。用來冷卻板體10的冷卻流體可自入口14a流過冷卻管道14而自出口14b流出。如圖1B所示,冷卻管道14可以是以圍繞氣體管道12且不會使冷卻流體流入氣體管道12的方式配置。此外,在本實施例中,冷卻管道為單一管道,而冷卻流體從單一管道的入口流向出口,但本發明不限於此。在另一實施例中,板體10中可以具有多個冷卻管道,而冷卻流體分別從這些管道的入口流向出口。冷卻流體可以包括氣體、液體或其組合。舉例來說,冷卻流體可以為水或矽膠油。 The main function of the cooling duct 14 is to cool the plate body 10. The cooling duct 14 is disposed in the board body 10 and exposed to the intake surface 10a of the board body 10. As shown in FIG. 1A, a cooling duct 14 is provided at the upper side (inlet surface 10a) of the plate body 10. The cooling duct 14 includes an inlet 14a and an outlet 14b. Cooling fluid used to cool the plate 10 can flow from the inlet 14a through the cooling conduit 14 and out of the outlet 14b. As shown in FIG. 1B, the cooling duct 14 may be configured to surround the gas duct 12 without flowing cooling fluid into the gas duct 12. Further, in the present embodiment, the cooling duct is a single duct, and the cooling fluid flows from the inlet of the single duct to the outlet, but the present invention is not limited thereto. In another embodiment, the plate body 10 may have a plurality of cooling ducts, with cooling fluid flowing from the inlets of the ducts to the outlets, respectively. The cooling fluid can include a gas, a liquid, or a combination thereof. For example, the cooling fluid can be water or silicone oil.

由於冷卻管道14設置在板體10的進氣面10a處,因此即使冷卻管道14在操作期間有所損壞,冷卻管道14中的冷卻流體也不會流到反應腔室中,可避免冷卻流體進入反應腔室進而污染反應腔室或工件的情形發生。 Since the cooling duct 14 is disposed at the intake surface 10a of the plate body 10, even if the cooling duct 14 is damaged during operation, the cooling fluid in the cooling duct 14 does not flow into the reaction chamber, and the cooling fluid can be prevented from entering. The reaction chamber and thus the reaction chamber or workpiece are contaminated.

此外,蓋板16設置在冷卻管道14的上方。蓋板16的作 用主要在於密封冷卻管道14,避免冷卻流體滲出。蓋板16的形狀主要是對應冷卻流道14而設計,但不以此為限。在一實施例中,蓋板16的材料包括金屬,例如鋁、銅、鋼或其組合。此外,蓋板16的材料可以與板體10的材料相同。 Further, a cover plate 16 is disposed above the cooling duct 14. Cover plate 16 The main purpose is to seal the cooling duct 14 to prevent the cooling fluid from seeping out. The shape of the cover plate 16 is mainly designed corresponding to the cooling flow passage 14, but is not limited thereto. In an embodiment, the material of the cover plate 16 comprises a metal such as aluminum, copper, steel or a combination thereof. Further, the material of the cover plate 16 may be the same as that of the plate body 10.

蓋板16藉由接著物18固接於板體10以密封冷卻管道。接著物18主要是配置於蓋板16的兩側。如圖1B所示,接著物18的配置位置可位於蓋板的轉角處。在另一實施例中,接著物可以是連續的配置於所有蓋板16的兩側,但不以此為限。在一實施例中,蓋板16可以是以焊接的方式與板體10固接,此時接著物18即為用以焊接的焊料。 The cover plate 16 is fixed to the plate body 10 by the attachment 18 to seal the cooling duct. Subsequent objects 18 are mainly disposed on both sides of the cover plate 16. As shown in FIG. 1B, the placement position of the slab 18 can be located at the corner of the cover. In another embodiment, the splicing may be continuously disposed on both sides of all the cover plates 16, but not limited thereto. In an embodiment, the cover 16 may be soldered to the board 10, and the slab 18 is solder for soldering.

圖2是依照本發明一實施例所繪示的薄膜沈積系統的反應腔室內部的示意圖。請參照圖2,本發明的氣體分佈板100應用至薄膜沈積系統的反應腔室200中。薄膜沈積系統的反應腔室200中具有氣體分佈板100、加熱板20與工件22。在薄膜沈積系統中,載流氣體從氣體源到達氣體分佈板100的進氣面10a,再經由氣體管道12從氣體分佈板100的噴灑面10b產生氣流24而分佈於真空反應腔室中,使載流氣體與其它反應氣體混合,並在經加熱器20加熱的工件22上發生化學反應以進行薄膜成長。 2 is a schematic diagram of the interior of a reaction chamber of a thin film deposition system according to an embodiment of the invention. Referring to Figure 2, the gas distribution plate 100 of the present invention is applied to a reaction chamber 200 of a thin film deposition system. The reaction chamber 200 of the thin film deposition system has a gas distribution plate 100, a heating plate 20, and a workpiece 22. In the thin film deposition system, the carrier gas is passed from the gas source to the inlet surface 10a of the gas distribution plate 100, and then the gas flow 24 is generated from the spray surface 10b of the gas distribution plate 100 via the gas conduit 12 to be distributed in the vacuum reaction chamber. The carrier gas is mixed with other reaction gases, and a chemical reaction occurs on the workpiece 22 heated by the heater 20 to effect film growth.

由圖2的示意圖可以得知,在此實施例中,由於冷卻管道14以及蓋板16設置於氣體分佈板100的進氣面10a處,因此,氣體分佈板100的噴灑面10b相對於進氣面10a可較為平整。因此,當自氣體分佈板100噴出的氣流24被冷卻管道14、蓋板16 以及接著物18所干擾。由於所噴出的氣流24的流場不被干擾,所以反應氣體可更均勻地分佈至被加熱的工件22上並發生化學反應來成長薄膜,且因此可得到均勻度高的膜厚。 As can be seen from the schematic diagram of FIG. 2, in this embodiment, since the cooling duct 14 and the cover plate 16 are provided at the intake surface 10a of the gas distribution plate 100, the spray surface 10b of the gas distribution plate 100 is opposed to the intake air. Face 10a can be relatively flat. Therefore, when the airflow 24 ejected from the gas distribution plate 100 is cooled by the duct 14, the cover 16 And the interference of the object 18 is. Since the flow field of the ejected gas stream 24 is not disturbed, the reaction gas can be more uniformly distributed onto the heated workpiece 22 and chemically reacted to grow the film, and thus a film thickness having a high uniformity can be obtained.

此外,在鍍膜製程中,當冷卻管道及蓋板設置於氣體分 佈板靠近真空腔室的表面時,冷卻管道及蓋板常會因電漿的離子撞擊而受到破壞,導致冷卻流體進入真空腔室中,因此污染真空腔室或工件。在本實施例中,由於冷卻管道14以及蓋板16設置於氣體分佈板100的進氣面10a處,因此可以有效地避免冷卻管道14以及蓋板16受到電漿的離子撞擊。 In addition, in the coating process, when the cooling pipe and the cover are disposed in the gas When the cloth plate is close to the surface of the vacuum chamber, the cooling pipe and the cover plate are often damaged by the ion impact of the plasma, causing the cooling fluid to enter the vacuum chamber, thereby contaminating the vacuum chamber or the workpiece. In the present embodiment, since the cooling duct 14 and the cover plate 16 are provided at the intake surface 10a of the gas distribution plate 100, it is possible to effectively prevent the cooling duct 14 and the cover plate 16 from being struck by ions of the plasma.

綜上所述,本發明藉由將冷卻管道設置於板體的進氣面 處,因此可避免對於製程氣體的氣流干擾,而使所得到的薄膜具有優良的均勻度。 In summary, the present invention provides a cooling duct on the intake surface of the plate body. Therefore, the airflow interference to the process gas can be avoided, and the obtained film has excellent uniformity.

此外,由於冷卻管道設置於板體的進氣面處,因此可以 減少因受到電漿離子撞擊而損壞的情況發生。 In addition, since the cooling duct is disposed at the intake surface of the plate body, Reduce the damage caused by the impact of plasma ions.

再者,本發明的設計使經由氣體分佈板所輸出的製程氣 體分佈更為均勻,因此可提昇製程良率,以及提高氣體分佈板的維護便利性。 Furthermore, the design of the present invention allows the process gas output via the gas distribution plate The body distribution is more uniform, which improves process yield and improves the maintenance of the gas distribution plate.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

10‧‧‧板體 10‧‧‧ board

10a‧‧‧進氣面 10a‧‧‧Inlet surface

10b‧‧‧噴灑面 10b‧‧‧ spray surface

12‧‧‧氣體管道 12‧‧‧ gas pipeline

12a‧‧‧進氣口 12a‧‧‧air inlet

12b‧‧‧出氣口 12b‧‧‧ outlet

14‧‧‧冷卻管道 14‧‧‧Cooling pipe

16‧‧‧蓋板 16‧‧‧ Cover

18‧‧‧接著物 18‧‧‧Subjects

100‧‧‧氣體分佈板 100‧‧‧ gas distribution board

Claims (6)

一種氣體分佈板,包括:板體,具有進氣面以及與所述進氣面相對的噴灑面,所述板體中具有冷卻管道與多個氣體管道,其中所述氣體管道貫穿所述板體且包括位於所述進氣面處的進氣口以及位於所述噴灑面處的出氣口,所述冷卻管道由所述進氣面暴露且包括入口與出口;以及蓋板,固接於所述板體以密封所述冷卻管道,其中冷卻流體在所述冷卻管道中自所述入口流向所述出口。 A gas distribution plate comprising: a plate body having an inlet surface and a spray surface opposite to the inlet surface, the plate body having a cooling pipe and a plurality of gas pipes, wherein the gas pipe runs through the plate body And including an air inlet at the intake surface and an air outlet at the spray surface, the cooling duct being exposed by the air intake surface and including an inlet and an outlet; and a cover plate fixed to the A plate body seals the cooling duct, wherein a cooling fluid flows from the inlet to the outlet in the cooling duct. 如申請專利範圍第1項所述的氣體分佈板,其中所述蓋板以焊接的方式與所述板體固接。 The gas distribution plate according to claim 1, wherein the cover plate is fixed to the plate body by welding. 如申請專利範圍第1項所述的氣體分佈板,其中所述蓋板的材料與所述板體的材料相同。 The gas distribution plate according to claim 1, wherein the material of the cover plate is the same as the material of the plate body. 如申請專利範圍第1項所述的氣體分佈板,其中所述氣體管道具有不同的孔徑。 The gas distribution plate of claim 1, wherein the gas conduits have different pore sizes. 如申請專利範圍第1項所述的氣體分佈板,其中所述氣體管道具有相同的孔徑。 The gas distribution plate of claim 1, wherein the gas conduits have the same pore size. 如申請專利範圍第1項所述的氣體分佈板,其中所述冷卻流體包括水或矽膠油。 The gas distribution plate of claim 1, wherein the cooling fluid comprises water or silicone oil.
TW104126554A 2015-08-14 2015-08-14 Gas distribution plate TWI579404B (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6171461B1 (en) * 1996-03-07 2001-01-09 Mark A. Bernick Sputtering cathode
US20140273409A1 (en) * 2013-03-14 2014-09-18 Memc Electronic Materials, Inc. Gas distribution plate for chemical vapor deposition systems and methods of using same
CN104183450A (en) * 2013-05-22 2014-12-03 中微半导体设备(上海)有限公司 Gas distribution plate and manufacturing method thereof
TW201521136A (en) * 2013-11-28 2015-06-01 Advanced Micro Fabrication Equipment Shanghai Co Ltd Semiconductor processing apparatus and gas distribution board applicable to semiconductor processing apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6171461B1 (en) * 1996-03-07 2001-01-09 Mark A. Bernick Sputtering cathode
US20140273409A1 (en) * 2013-03-14 2014-09-18 Memc Electronic Materials, Inc. Gas distribution plate for chemical vapor deposition systems and methods of using same
CN104183450A (en) * 2013-05-22 2014-12-03 中微半导体设备(上海)有限公司 Gas distribution plate and manufacturing method thereof
TW201521136A (en) * 2013-11-28 2015-06-01 Advanced Micro Fabrication Equipment Shanghai Co Ltd Semiconductor processing apparatus and gas distribution board applicable to semiconductor processing apparatus

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