TWI577559B - Layer separating apparatus - Google Patents

Description

Layer separation equipment

This invention relates to a layer separation apparatus, and more particularly to an apparatus for separating a coating layer from a base substrate in a flexible display process.

Single crystal or polycrystalline germanium transistors have been widely used in displays due to excellent switching characteristics due to high electron mobility. It is necessary to perform heat treatment at a predetermined temperature or higher under a nitrogen atmosphere for producing a tantalum crystal having excellent switching characteristics, and a glass substrate having low heat deformation at a high temperature is used as a base substrate due to a high processing temperature. A film for forming a germanium crystal.

As a next-generation display, a flexible display manufactured in various forms (for example, a flexible display that is not only thin and light but also impact-resistant, flexible, and bendable) has been extensively studied. Due to the low flexibility characteristics of germanium transistors and limitations in the base substrate, it is difficult to apply germanium transistors to flexible displays. In recent years, as a method for manufacturing a flexible semiconductor device, a method for using a thin glass plate as a substrate, a method for using a metal plate as a substrate, and a method for using a plastic substrate have been proposed. Methods were studied.

(a) to (f) of FIG. 1 illustrate a method for fabricating an AMOLED flexible semiconductor An example of a method of the device.

The base substrate 11 is provided as illustrated in (a) of FIG. 1, and as illustrated in (b) of FIG. 1, the plastic coating layer 12 is thinly coated on the top surface of the base substrate 11. The plastic coating layer 12 is made of polyimide (PI) which can be used for a heat treatment process. Next, as illustrated in (c) of FIG. 1, a plurality of semiconductor devices 13 are formed on the top surface of the plastic coating layer 12, that is, an active array organic which has been subjected to a laser low-temperature polysilicon (LTPS) process. An active matrix organic light emitting diode (AMOLED) device. After the plurality of semiconductor devices 13 are formed on the top surface of the plastic coating layer 12, as described in (d) of FIG. 1, the upper protective film 14 is formed on the uppermost surface. After the upper protective film 14 is formed, as described in (e) of FIG. 1, the plastic coating layer 12 formed on the top surface of the base substrate 11 is separated from the base substrate 11. Thereafter, as illustrated in (f) of FIG. 1, the lower protective film 15 is formed on the bottom surface of the plastic coating layer 12 separated from the base substrate 11, thus obtaining the final flexible OLED device.

In this case, a method of separating the interface between the base substrate and the plastic coating layer in (e) of FIG. 1 is performed by removing the base substrate 11 using a laser lift-off (LLO) process. In other words, the bonding strength between the base substrate 11 and the plastic coating layer 12 is lowered by the radiation of the laser (L), thereby separating the base substrate 11 from the plastic coating layer 12 and removing the base substrate 11.

However, in the related art, the interface separation between the base substrate 11 and the plastic coating layer 12 is examined only by the naked eye, and there is no method for using the material to check the state of the interface separation. Therefore, the test for interface separation is unreliable and not precise.

[Related technical literature] [Patent Literature]

(Patent Document 1) Korean Patent Application Publication No. 10-2011-0131017

The present disclosure provides an apparatus for separating a base substrate and a plastic coating layer from each other. The present disclosure also provides an apparatus for verifying whether the base substrate and the plastic coating layer are separated. The present disclosure also enhances the reliability of verifying the separation of the base substrate and the plastic coating layer.

According to an exemplary embodiment, a layer separation apparatus includes a chamber having an interior space and having a window on an upper wall thereof; a laser radiation unit configured to radiate a laser beam through the window to the interior space a light source sensor configured to emit light toward a device substrate disposed in the interior space and to receive light reflected from the device substrate; a display unit configured to display light reception measured from the light source sensor And a substrate transfer plate configured to support the device substrate in the interior space of the chamber to transfer the device substrate during a laser beam irradiation process to slide under the window and have been completed The laser beam is passed through the device substrate after the laser beam is irradiated to slide under the light source sensor.

Moreover, the layer separating apparatus may further include: an inspection processing unit configured to determine whether the light receiving value falls within a reference value range, and the interface separation succeeds when the light receiving value falls within a reference value range Alarm and receiving at the light An alarm that the interface separation failed when the value is outside the reference range.

And, when the light receiving value is outside the reference value range, the device substrate can be transferred again and radiated with a laser beam.

Moreover, the device substrate may include a base substrate, a plastic coating layer, a semiconductor device, and a protective film which are sequentially stacked, and the surface of the irradiated laser beam is a surface of the base substrate.

Moreover, the plastic coating layer may be any one selected from the group consisting of polyethylenenaphthene (PEN), polyethylene terephthalate (PET), and poly Polycarbonate (PC), Polyethylene sulfone (PES), Polyimide (PI), Polyallylate (PAR), Polycyclic olefin (PCO), Polymethyl Polymethylmethacrylate (PMMA), cross-linking type epoxt, and cross-linking type urethane film.

The above described features and advantages of the invention will be apparent from the following description.

10‧‧‧Base

10a‧‧‧First semiconductor device substrate

10b‧‧‧Second semiconductor device substrate

11‧‧‧Basic substrate

12‧‧‧Plastic coating

13‧‧‧Semiconductor device

14‧‧‧Upper protective film

15‧‧‧Under protective film

100‧‧‧ chamber

100a‧‧‧Upper wall

100b‧‧‧ Subject

200‧‧‧ base table

210‧‧‧Linear motor guide

220‧‧‧Y-axis transfer board

230‧‧‧Base transfer board

300‧‧‧ windows

400‧‧‧Light source sensor

400a‧‧‧Light source sensor

400b‧‧‧Light source sensor

400c‧‧‧Light source sensor

410‧‧‧Light emitting part

420‧‧‧Light receiving part

500‧‧‧Laser radiation unit

600‧‧‧ display unit

700‧‧‧Test Processing Unit

I‧‧‧ first line

II‧‧‧ second line

III‧‧‧ third line

(a) to (f) of FIG. 1 illustrate an example of a method for manufacturing an active array organic light emitting diode (AMOLED) flexible semiconductor device.

2 illustrates a layer separation device in which a laser beam is used, according to an exemplary embodiment Radiation onto the substrate of the semiconductor device.

3 illustrates a layer separation apparatus in which layer separation of a semiconductor device substrate is inspected by a light source sensor, according to an exemplary embodiment.

FIG. 4 illustrates a substrate table in accordance with an exemplary embodiment.

FIG. 5 illustrates a semiconductor device substrate on a substrate transfer board, according to an exemplary embodiment.

FIG. 6 is a conceptual cross-sectional view illustrating a light source sensor configured by an RGB sensor, according to an exemplary embodiment.

Figure 7 illustrates light emitted and received by a light source sensor after the laser beam is radiated onto the surface of the base substrate, in accordance with an exemplary embodiment.

FIG. 8 is a conceptual block diagram for verifying whether separation of a layer separation device is successful, according to an exemplary embodiment.

FIG. 9 is an image showing an additional display unit having an input member, according to an exemplary embodiment.

Figure 10 illustrates a situation in which a laser beam is radiated in a dual processing chamber, in accordance with an exemplary embodiment.

11 illustrates a situation in which a test of layer separation is performed using a light source sensor in a dual processing chamber, according to an exemplary embodiment.

Hereinafter, exemplary embodiments will be described in detail with reference to the accompanying drawings. However, the disclosure may be embodied in many different forms and should not be construed as limited to The embodiments are described; rather, the embodiments are provided so that this disclosure will be thorough and complete, and the concept of the disclosure will be fully conveyed by those skilled in the art. Moreover, the disclosure is to be limited only by the scope of the claims. Like reference numerals in the figures denote like devices.

Hereinafter, the device substrate refers to a substrate in which a plastic coating layer is coated on a base substrate and a plurality of devices are deposited on the plastic coating layer. The device may include a semiconductor device or the like. In the following description, a semiconductor device substrate will be described as an example of a device substrate; however, the present invention is applicable to various device substrates other than a semiconductor device substrate.

2 illustrates a layer separation device in which a laser beam is radiated onto a semiconductor device substrate, and FIG. 3 illustrates a layer separation device in which a semiconductor device substrate is inspected by a light source sensor, according to an exemplary embodiment Layer separation.

The chamber 100 has a substrate stage 200 that supports the semiconductor device substrate 10 in the internal space of the chamber 100, and the layer separation is performed by the laser processing on the semiconductor device substrate 10 placed on the substrate stage 200. Also, the chamber 100 includes a main body 100b whose upper portion is open, and an upper wall 100a which is a top cover covering the upper portion of the main body and is capable of opening and closing. Although not shown, the chamber 100 has a door on the side wall, which is a through path through which the semiconductor device substrate 10 is transferred to the internal space.

The chamber 100 has a window 300 made of a transparent material on its upper wall 100a and has a through-through area, for example, in a portion of the upper wall 100a of the chamber 100, So that the through area is used as a window. Specifically, a window holding main body (not shown) is mounted in a through area on the upper wall of the chamber 100, and the window 300 is held and supported by the window holding body, thereby placing the window 300 on the upper wall of the chamber 100. on. The window 300 is made of quartz or the like, and thus allows a laser beam oscillated from the laser radiation unit 500 to pass through the window 300 and propagate toward the semiconductor device substrate 10 on the substrate stage 200. And, a plurality of light source sensors 400 (400a, 400b, 400c) disposed opposite to the substrate stage 200 are disposed in a lower portion of the upper wall 100a of the chamber, and are emitted toward the semiconductor device substrate 10 placed on the substrate stage 200. And receiving light reflected from the surface of the semiconductor device substrate 10, which will be described later.

The substrate table 200 illustrated in FIG. 4 has a surface plate structure and thus has a substrate transfer plate 230 in which a semiconductor device substrate is placed in the substrate transfer plate 230 such that the substrate transfer plate 230 can be guided along a linear motor (LM) Pieces of movement. In other words, the Y-axis transfer plate 220 moves along the LM guide 210 in the X-axis direction, and the base transfer plate 230 moves along the Y-axis transfer plate 220 in the Y-axis direction. Therefore, the semiconductor device substrate placed on the substrate transfer plate 230 is positioned at an appropriate position because the semiconductor device substrate can be moved in the X-axis and Y-axis directions and by horizontal rotation during the laser layer separation and inspection process. . Herein, the X-axis and the Y-axis may comprise any axis that forms a 2-dimensional plane. The definitions of the X-axis and the Y-axis are also applicable to the following description. Moreover, the horizontal rotation means that when the substrate supporting structure (not shown) on which the substrate is placed is additionally disposed in the substrate transfer plate 230, the semiconductor device substrate placed on the substrate supporting structure can be rotated by the rotation of the substrate supporting structure.

At the same time, the semiconductor device substrate 10 is placed on the substrate transfer plate of the substrate table 200. 230, wherein, as illustrated in FIG. 5, the semiconductor device substrate 10 in the exemplary embodiment refers to a substrate in which a plastic coating layer 12 is disposed on the base substrate 11, and a plurality of semiconductor devices 13 are deposited on the plastic coating layer 12. It is covered with a protective film 14. Also, the semiconductor device substrate 10 may be a substrate without the protective film 14.

The protective film 14 is placed in contact with the upper surface of the substrate transfer plate 230, and the base substrate 11 is positioned farthest from the substrate transfer plate 230. Therefore, the laser beam is radiated onto the surface of the base substrate 11. Similarly, the light source sensor can also emit light toward the base substrate and receive light.

The above base substrate 11 may include a glass substrate, a ceramic substrate, and a metal-polysilicon or polymer substrate; however, the base substrate is not limited thereto, and thus various kinds of base substrates having thermal stability at a high substrate temperature are applicable. Furthermore, since the base substrate according to the exemplary embodiment is separated and removed in a subsequent process, it is not required to be transparent, but various and inexpensive materials can be used for the substrate as long as the materials are thermally stable at high temperatures. That's all, regardless of its transparency.

Therefore, the plastic coating layer 12 applied to the base substrate 11 may be made of a flexible material having flexibility, and may include any one selected from the group consisting of polyethylene naphthalate (PEN). , polyethylene terephthalate (PET), polycarbonate (PC), polyphenyl hydrazine (PES), polyimine (PI), polyallyl (PAR), polycyclic olefin (PCO) ), polymethyl methacrylate (PMMA), crosslinked epoxy resin and crosslinked polyurethane film. Additionally, the plurality of semiconductor devices 13 deposited on the plastic coating layer 12 may comprise OLED semiconductor devices that have been crystallized by low temperature polysilicon (LTPS).

The laser radiation unit 500 causes the laser beam to oscillate through the window 300 into the interior space of the chamber to radiate the laser beam onto the surface of the semiconductor device substrate 10. The laser radiation unit 500 may further be provided with a mirror (not shown) and the laser beam emitted from the laser radiation unit 500 is reflected from the mirror and thus radiates toward the surface of the semiconductor device substrate. Examples of the laser source of the laser radiation unit 500 may include at least one selected from the group consisting of gas lasers, for example, Ar lasers, Kr lasers, and excimer lasers; with 钕 (Nd) , one or more dopants of ytterbium (Yb), chromium (Cr), titanium (Ti), yttrium (Ho), yttrium (Er), yttrium (Tm), and tantalum (Ta) are added to, for example, YAG, YV04 a single crystal of forsterite (Mg ₂ SiO ₄ ), YA103, and GdV04 or a medium of a medium such as YAG, Y203, YV04, YA103, and GdV04; glass laser; ruby laser Emerald sapphire laser; Ti: sapphire laser; copper vapor laser and gold vapor laser. Desirably, the laser beam can be a linear beam that concentrates the beam more easily than a surface-shaped beam that collectively radiates the entire surface of the substrate.

As illustrated in FIG. 5, the surface (the opposite surface) of the irradiated laser beam is the base substrate, and thus the laser beam is radiated to the base substrate 11 when the base substrate, the plastic coating layer, the semiconductor device, and the protective film are sequentially stacked. On the bottom surface. The laser beam radiation causes a change in the interface between the base substrate 11 and the plastic coating layer 12, thereby separating the base substrate 11 and the plastic coating layer 12 from each other. The laser beam reduces the bond strength of the interface, thereby separating the base substrate from the plastic coating layer.

Meanwhile, in order to verify whether the separation between the base substrate 11 and the plastic coating layer 12 is successful due to the laser beam for layer separation, the substrate transfer plate 230 moves. The semiconductor device substrate 10 is allowed to slide in the Y-axis direction below the light source sensor 400.

The light source sensor 400 is disposed in a lower portion of the upper wall of the chamber to emit and receive light. An example of the light source sensor 400 may include an RGB sensor and an infrared sensor, and when the light source sensor is configured by an RGB sensor, the RGB sensor emits visible light and receives light reflected therefrom. The light source sensor 400 emits light toward the semiconductor device substrate and then receives light reflected from the surface of the semiconductor device substrate. In other words, the surface to which the emitted light reaches is the surface of the base substrate, and thus the laser beam is radiated to the surface of the base substrate 11 when the base substrate, the plastic coating layer, the semiconductor device, and the protective film are sequentially stacked. on. Figure 6 is a conceptual cross-sectional view illustrating a light source sensor configured by an RGB sensor. The light source sensor 400 configured by the RGB sensor includes and emits visible light from the light emitting portion 410, wherein the emitted light is transmitted through or totally reflected from the base substrate 11 and A portion of the transmitted light is again guided by total reflection or refraction from the plastic coating layer 12. Therefore, a part of the emitted light is again reflected from the surface of the base substrate 11. The light receiving portion 420 of the light source sensor 400 collects light reflected from the surface of the base substrate 11. In addition, a plurality of light source sensors may be disposed, and for example, three light source sensors are disposed in a row, that is, the first light source sensor 400a, the second light source sensor 400b, and the third light source sensor 400c , as illustrated in Figures 2 and 3. Therefore, light can be emitted or received at multiple portions of the base substrate at the same time.

For reference, Figure 7 illustrates a table in which a laser beam is radiated to a base substrate. Light emitted and received by the light source sensor after the surface. The laser beam can scan the entire surface of the base substrate 11 as the base substrate moves in the Y-axis direction below the window.

The laser beam radiation reduces the bonding strength of the interface between the base substrate 11 and the plastic coating layer 12, thereby causing the plastic coating layer 12 to be separated from the base substrate 11. In order to verify whether the layer separation is completely successful, the substrate transfer plate is transmitted in the Y-axis direction to allow the base substrate to move slowly in the Y-axis direction below the light source sensor 400. Light reflected from three points on the surface of the base substrate can be received by the three light source sensors 400a, 400b, 400c. Therefore, when three light source sensors are provided, scanning is performed on a plurality of points of the first line I, the second line II, and the third line III according to the movement of the base substrate, and light emission and reception can be realized.

At the same time, the light reception value received by the light source sensor 400 may vary depending on whether the interface between the base substrate 11 and the plastic coating layer 12 is completely separated. The above light reception value refers to one of the RGB ratio of the received light and the light reception amount as the amount of received light. For reference, the RGB ratio of the received light is compared to the RGB ratio of the emitted light. That is, in the case where the RGB ratio of the emitted light is equal to R:G:B=1:1:1, the RGB ratio of the received light is used to determine the RGB ratio of the received light and the emitted light. How much does the RGB ratio deviate? The shifting element of the RGB ratio shows whether the interface separation was successful.

And, the light receiving amount as the amount of received light is used to check the interface separation state by detecting the light receiving amount with respect to the light emission amount. The interface separation can be verified by using the following characteristics: when the interface between the base substrate and the plastic coating layer is completely attached, that is, in the 100% attached state, the light receiving value is the highest, and the interface is divided The start of the separation causes the attached state to deteriorate, and the light reception value becomes low. For example, suppose that when the interface between the base substrate and the plastic coating layer is completely attached, that is, in the 100% attached state, the ratio of the light receiving value to the light emission value is higher than 90%, in the base substrate and When the interface between the plastic coating layers is partially separated and the ratio of the interface attachment state is reduced to less than 50%, the light receiving value becomes reduced to less than 70%. This is because the bonding strength at the interface between the base substrate and the plastic coating layer changes, thus causing the amount of light reception to change due to the different refractive indices between the interfaces. A portion of the laser beam radiated onto the surface of the base substrate is reflected from the surface by total reflection and then received; however, a portion of the laser beam passing through the base substrate changes its interface between the base substrate and the plastic coating layer. Refractive index. When the interface is fully attached, the amount of light reflected by the total reflection toward the surface of the interface increases; however, when the interface is partially or completely separated to reduce the bond strength, the amount of refracted light that is guided through the plastic coating layer and between the interfaces is changed. The amount of light greater than total reflection is obtained, which results in a reduction in the amount of reflected light.

Therefore, according to an exemplary embodiment, whether the interface is separated can be checked by using a characteristic that the light receiving value changes depending on whether the interface is separated. To this end, a conceptual block diagram illustrating verification of a layer separation device in accordance with an exemplary embodiment is illustrated in FIG.

The light reception value measured by the light source sensor 400 is delivered to the display unit 600 disposed outside the chamber 100 and displayed on the display unit 600 to enable the process operator to determine whether the interface separation is successful. The display unit 600 can be configured by a general display panel and, alternatively, can be configured by an additional display unit having an input member as illustrated in FIG.

According to an exemplary embodiment, the verification processing unit 700 is independently provided, which determines whether the light reception value falls within the reference value range, and generates an alarm that the interface separation succeeds when the light reception value falls within the reference value range, and The light reception value generates an alarm that the interface separation fails when the value is outside the reference value range. For example, when the ratio of the reference value range to the light emission value is 20% to 40% and the ratio of the light reception value to the light emission value is 32%, the verification processing unit 700 generates an alarm that the interface separation is successful. In contrast, when the ratio of the light reception value to the light emission value is 55%, the ratio is outside the reference value range, and thus the inspection processing unit 700 generates an alarm that the interface separation fails. The reference value range is a range within which the interface separation between the base substrate and the plastic coating layer is successfully completed. The reference value range may be a range of a ratio of the light reception value to the light emission value, but may be set as a reception value range or an RGB ratio range of the light reception amount. The reference value range can be determined according to the type of the base substrate, and it is particularly desirable to determine the reference value range according to the type of the plastic coating layer.

When the light reception value is outside the reference value range, in addition to generating an alarm for interface separation failure, the inspection processing unit 700 also controls the substrate transfer plate 230 to again radiate the laser beam onto the semiconductor device substrate. In other words, when the light receiving value is outside the reference value range, the base substrate is not completely separated. Thus, the substrate transfer plate is passed under the window to re-radiate the laser beam onto the semiconductor device substrate for complete separation.

At the same time, the aforementioned layer separation apparatus has been described by exemplifying a single processing chamber, but can also be applied to a dual processing chamber. Figures 10 and 11 illustrate the case where a laser beam is radiated in a dual processing chamber and the light reception value is detected. Specifically, Figure 10 illustrates The exemplary embodiment illuminates a laser beam in a dual processing chamber, and FIG. 11 illustrates a situation in which layer separation is verified in a dual processing chamber by using a light source sensor, in accordance with an exemplary embodiment. For reference, the substrate transfer plate placed above and thus the substrate of the semiconductor device is omitted in FIGS. 10 and 11 for better understanding.

As illustrated in FIG. 10, the first semiconductor device substrate 10a is transferred from the first spare area A to the laser beam processing area B in the X-axis direction, and then exposed to the laser beam while being transmitted along the Y-axis. In this case, the second semiconductor device substrate 10b is transferred from the outside to the second spare area C or from the second spare area C through the gate.

When the laser beam radiation onto the first semiconductor device substrate 10a has been completed as illustrated in FIG. 10, as illustrated in FIG. 11, the first semiconductor device substrate 10a returns to the first spare area A, and at the light source sensor 400. The lower side is transmitted in the Y-axis direction to check whether the interface is separated. Here, the second semiconductor device substrate 10b placed in the second spare region C is input into the laser beam processing region B along the X-axis, and is exposed to the laser beam while being transmitted in the Y-axis direction.

According to an exemplary embodiment, it is possible to verify whether the base substrate and the plastic coating layer are separated, thereby improving the reliability of the inspection. Moreover, a light source sensor is used in place of the operator's naked eye for easy and quick inspection. Furthermore, the inspection is performed in the same chamber after the laser beam is irradiated, which makes it possible to simplify the entire process of the manufacturing process.

Although the layer separation apparatus of the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes without departing from the spirit and scope of the present invention. Retouching, so the invention The scope of protection is subject to the definition of the scope of the patent application.

10‧‧‧Base

11‧‧‧Basic substrate

12‧‧‧Plastic coating

14‧‧‧Upper protective film

200‧‧‧ base table

230‧‧‧Base transfer board

400‧‧‧Light source sensor

400a‧‧‧Light source sensor

400b‧‧‧Light source sensor

400c‧‧‧Light source sensor

I‧‧‧ first line

II‧‧‧ second line

III‧‧‧ third line

Claims (11)

A layer separation apparatus comprising: a chamber having an interior space and having a window on an upper wall thereof; a laser radiation unit configured to radiate a laser beam through the window to the interior space; And configured to emit light toward a device substrate disposed in the interior space and to receive the light reflected from the device substrate; a display unit configured to display a light received value measured from the light source sensor And a substrate transfer plate configured to support the device substrate in the interior space of the chamber to transfer the device substrate during a laser beam irradiation process to slide under the window and upon completion of the The device substrate is transferred after the laser beam irradiation process to slide under the light source sensor. The layer separation apparatus of claim 1, further comprising: an inspection processing unit configured to determine whether the light reception value falls within a reference value range, and is configured to fall at the light reception value An alarm that the interface separation succeeds is generated within the reference value range, and an alarm that the interface separation fails is generated when the light reception value is outside the reference value range. The layer separation apparatus of claim 2, wherein, when the light receiving value is outside the reference value range, the device substrate is again transmitted and irradiated with the laser beam. The layer separation device according to claim 1 or 2, wherein the device substrate comprises a base substrate, a plastic coating layer, a semiconductor device and a protective film which are sequentially stacked, and the surface of the laser beam is irradiated The surface of the base substrate. The layer separation device of claim 4, wherein the plastic coating layer is any one selected from the group consisting of polyethylene naphthalate, polyethylene terephthalate, Polycarbonate, polyphenyl hydrazine, polyimide, polyallyl compound, polycyclic olefin, polymethyl methacrylate, crosslinked epoxy resin, and crosslinked polyurethane film. The layer separating apparatus of claim 4, wherein the light receiving value changes depending on a separation state of an interface between the base substrate and the plastic coating layer. The layer separation device of claim 1 or 2, wherein the light source sensor is an RGB sensor. The layer separation device of claim 7, wherein the light receiving value is at least one of an RGB ratio and a light receiving amount. The layer separating apparatus according to claim 1 or 2, wherein, when the device substrate comprises a base substrate, a plastic coating layer, a semiconductor device, and a protective film which are sequentially stacked, the reference value range is according to the The type of plastic coating layer is determined. The layer separation apparatus of claim 1 or 2, wherein the device is an active array organic light-emitting diode device obtained by low temperature polysilicon. The layer separation apparatus of claim 1, wherein the light source sensor is disposed in a lower portion of an upper wall of the chamber.