TWI576655B - Film and film for film - Google Patents
Film and film for film Download PDFInfo
- Publication number
- TWI576655B TWI576655B TW103109471A TW103109471A TWI576655B TW I576655 B TWI576655 B TW I576655B TW 103109471 A TW103109471 A TW 103109471A TW 103109471 A TW103109471 A TW 103109471A TW I576655 B TWI576655 B TW I576655B
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- Prior art keywords
- film
- carbon
- pore
- carbon porous
- thickness
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- 239000011148 porous material Substances 0.000 claims description 244
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 190
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- GQHTUMJGOHRCHB-UHFFFAOYSA-N 2,3,4,6,7,8,9,10-octahydropyrimido[1,2-a]azepine Chemical compound C1CCCCN2CCCN=C21 GQHTUMJGOHRCHB-UHFFFAOYSA-N 0.000 description 25
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- 238000002210 supercritical carbon dioxide drying Methods 0.000 description 1
- 230000000153 supplemental effect Effects 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910001428 transition metal ion Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
- B01D71/02—Inorganic material
- B01D71/021—Carbon
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Description
本發明係關於一種使用極紫外光之光微影用之護膜用膜及具備該護膜用膜之護膜。 The present invention relates to a film for a film for use in photolithography using extreme ultraviolet light and a film comprising the film for film.
半導體積體電路於1960年代開始生產後謀求提昇積體度,自1970年代初至最近一直持續3年實現約4倍之高積體化之異常顯著之高積體化。對該半導體積體電路之高積體化有貢獻之技術為被稱為光微影之曝光技術。於該曝光技術中,半導體積體電路之佈線之最小線寬取決於解析度,所得之解析度依照瑞利式依賴於曝光光學系統之開口度、曝光裝置之被稱為K1因數之裝置常數與曝光波長λ(以下亦僅記載為λ)。其結果,為了獲得45nm以下之解析度,業界認為使用將曝光波長稱為EUV區域的λ=6~14nm之極紫外光(以下亦記載為EUV(Extreme Ultra Violet)光)之EUV光微影為最有力者。 The semiconductor integrated circuit began to be produced in the 1960s and sought to improve the total body. From the early 1970s to the recent three years, it has achieved an extremely high integration of about four times the high integration. A technique that contributes to the high integration of the semiconductor integrated circuit is an exposure technique called photolithography. In the exposure technique, the minimum line width of the wiring of the semiconductor integrated circuit depends on the resolution, and the resolution obtained according to the Rayleigh type depends on the opening degree of the exposure optical system, the device constant called the K1 factor of the exposure device, and The exposure wavelength λ (hereinafter also referred to simply as λ). As a result, in order to obtain a resolution of 45 nm or less, it is considered that EUV light lithography using IGBTs having an exposure wavelength of λ=6 to 14 nm (hereinafter also referred to as EUV (Extreme Ultra Violet) light) is referred to as an EUV region. The most powerful.
作為目前EUV光微影開發中之課題,可列舉:EUV用光源之輸出、EUV用光阻、EUV用掩膜之缺陷或污染物粒子等。其中,EUV用光源之輸出、具體而言無法充分增大EUV光源之輸出之情況嚴重影響所有課題。例如,於關於EUV用掩膜之污染物粒子之課題中,EUV光大致被全部之物質大量吸收,因此與先前之曝光波長、436nm(g線)、365nm(i線)、248nm(KrF)、193nm(ArF)等下之透過縮小投影曝光技術不同,於EUV光微影中,使用反射縮小投影曝光技術,且將含有EUV用掩膜之所有曝光裝置之元件配置於真空中。 As a subject of current EUV photolithography development, an output of a light source for EUV, a photoresist for EUV, a defect of a mask for EUV, or a contaminant particle can be cited. Among them, the output of the EUV light source, specifically, the fact that the output of the EUV light source cannot be sufficiently increased seriously affects all problems. For example, in the subject of contaminant particles for a mask for EUV, EUV light is substantially absorbed by a large amount of all substances, and thus the previous exposure wavelength, 436 nm (g line), 365 nm (i line), 248 nm (KrF), The 193 nm (ArF) or the like is different from the reduced projection exposure technique. In the EUV photolithography, the reflection reduction projection exposure technique is used, and the components of all the exposure devices including the EUV mask are placed in a vacuum.
然而,根據最近之EUV光微影之證明試驗推測下述可能性:即便將元件配置於真空中,亦於曝光裝置中大量產生污染物粒子,從而需要頻繁清洗EUV用掩膜。因此,只要可獲得數百W以上之EUV用光源之輸出(中間聚光點值),而需要如先前之護膜。 However, according to the recent proof test of EUV light lithography, it is presumed that even if the element is placed in a vacuum, a large amount of contaminant particles are generated in the exposure apparatus, and it is necessary to frequently clean the mask for EUV. Therefore, as long as the output of the EUV light source (intermediate spot value) of several hundred W or more is obtained, a protective film as in the prior art is required.
作為EUV用護膜所使用之護膜用膜,目前為止提出有具有以下所示之4種膜結構者。第1膜結構係使包含對EUV光消光係數k(以下亦僅記載為k)較低之元素例如碳C之奈米碳管(Carbon Nano Tube:CNT)等於EUV用掩膜表面柱狀(數十nm之間隔,高度數μm)成長(例如參照專利文獻1)。 As a film for a film used for a film for EUV, four types of film structures shown below have been proposed so far. The first film structure is such that an element including a carbon dioxide extinction coefficient k (hereinafter also referred to as k) is low, for example, a carbon nanotube (CNT Nano Tube: CNT) is equal to a column surface of the EUV mask. The interval of ten nm and the height of several μm are grown (for example, refer to Patent Document 1).
第2膜結構係使用矽Si作為針對λ=13.5nm之EUV光之k較低之元素製作膜厚20~150nm之極薄之平膜,並將其設為EUV用護膜用膜(例如參照專利文獻2)。 In the second film structure, 矽Si is used as an ultrathin flat film having a thickness of 20 to 150 nm for a lower element of EUV light of λ = 13.5 nm, and this is used as a film for a protective film for EUV (for example, see Patent Literature) 2).
第3膜結構使用對EUV光之k較低之元素(矽(Si)、釕(Ru)、銥(Ir)、金(Au)、錸(Rh)、碳(C)等)、或化合物(氮化鋁(AlN)、氮化矽(SiN)、碳化矽(SiC)等),將膜厚30~300nm之單層或多層之平膜、與具有矩形狀、蜂窩狀等開口部且線徑為數十μm、線與線之週期為數百μm~數mm的被稱作所謂的網格(grid)、篩目(mesh)之膜(以下亦記載為支持膜)接合而成之複合膜(例如參照專利文獻3~5、非專利文獻2)。 The third film structure uses an element having a lower k for EUV light (yttrium (Si), yttrium (Ru), yttrium (Ir), gold (Au), yttrium (Rh), carbon (C), etc.) or a compound ( Aluminum nitride (AlN), tantalum nitride (SiN), tantalum carbide (SiC), etc., a single layer or a plurality of flat films having a thickness of 30 to 300 nm, and an opening having a rectangular shape, a honeycomb shape, and the like A composite film called a so-called grid or a mesh film (hereinafter also referred to as a support film) having a period of several tens of μm and a line and a line length of several hundred μm to several mm (For example, refer to Patent Documents 3 to 5 and Non-Patent Document 2).
第4膜結構係將由對EUV光之k較低之元素(Si、Ru、C等)製作而成之氣凝膠膜作為EUV用護膜用膜者。所謂氣凝膠膜,係指含有高達90.0~99.8%之空氣,視密度為數10-3~數10-1g/cm3之具有多個微孔、中孔、巨孔之海綿狀多孔膜。業界認為,藉由使用使氣凝膠膜中之孔徑充分小於入射之EUV光之波長且將由瑞利散射造成之透過率之降低最小化的氣凝膠膜,而獲得即便無膜厚為約1.0~10.0μm之支持膜亦具有充分之膜強度且具有相對於EUV光之高透過率的膜(例如參 照專利文獻6、7)。 In the fourth film structure, an aerogel film made of an element (Si, Ru, C, or the like) having a low E light of EUV is used as a film for a protective film for EUV. The aerogel film refers to a sponge-like porous film having a plurality of micropores, mesopores, and macropores containing up to 90.0 to 99.8% of air and an apparent density of 10 -3 to 10 -1 g/cm 3 . The industry believes that by using an aerogel film that minimizes the wavelength of the EUV light in the aerogel film and minimizes the decrease in transmittance caused by Rayleigh scattering, even if the film thickness is about 1.0. The support film of ~10.0 μm also has a film strength and a film having a high transmittance with respect to EUV light (see, for example, Patent Documents 6 and 7).
該膜結構係著眼於下述情況者:(1)EUV區域之物質之吸收嚴重依賴於物質之元素之種類與物質之密度;(2)可藉由設為允許瑞利散射之程度之發泡體結構(多孔膜)而確保膜厚,提高膜強度。尤其是於專利文獻6中認為,藉由使用以氟化氫HF作為主成分之溶液使Si電化學溶解所製作之矽氣凝膠(Si氣凝膠),而獲得EUV光之透過率較高之EUV用護膜用膜,又,藉由下述金屬發泡氣凝膠而獲得具有較高之耐氧化性之EUV用護膜用膜,該金屬發泡氣凝膠係利用γ射線對含有貴金屬或Ru等過渡金屬離子之水凝膠進行照射,析出金屬奈米粒子製作而成。 The film structure is focused on the following conditions: (1) The absorption of the substance in the EUV region is heavily dependent on the type of the element of the substance and the density of the substance; (2) the foaming can be achieved by allowing Rayleigh scattering. The bulk structure (porous membrane) ensures the film thickness and increases the film strength. In particular, in Patent Document 6, it is considered that EUV having a high EUV light transmittance is obtained by using a helium gel (Si aerogel) prepared by electrochemically dissolving Si with a solution containing hydrogen fluoride HF as a main component. A film for a protective film, which is obtained by a metal foaming aerogel having a high oxidation resistance, which is a film containing a noble metal or A hydrogel of a transition metal ion such as Ru is irradiated to form a metal nanoparticle.
又,於專利文獻7中顯示欲藉由CNT實現該膜結構之嘗試。該結構係使用一些方法將CNT自身製作厚度為1.0~5.0nm之膜並用作EUV用護膜用膜。認為藉由將CNT膜之視密度設為1.5×10-3~0.5g/cm3,可獲得類似氣凝膠之膜結構體。 Further, Patent Document 7 shows an attempt to realize the film structure by CNT. This structure uses a method of producing a film having a thickness of 1.0 to 5.0 nm by using the CNT itself and using it as a film for a protective film for EUV. It is considered that an aerogel-like film structure can be obtained by setting the apparent density of the CNT film to 1.5 × 10 -3 to 0.5 g/cm 3 .
[專利文獻1]美國專利第7763394號說明書 [Patent Document 1] US Patent No. 7763394
[專利文獻2]日本專利特開2009-271262號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2009-271262
[專利文獻3]日本專利特開2005-43895號公報 [Patent Document 3] Japanese Patent Laid-Open Publication No. 2005-43895
[專利文獻4]美國專利第7153615號說明書 [Patent Document 4] US Patent No. 7153615
[專利文獻5]日本專利特開2010-256434號公報 [Patent Document 5] Japanese Patent Laid-Open Publication No. 2010-256434
[專利文獻6]日本專利特開2010-509774號公報 [Patent Document 6] Japanese Patent Laid-Open Publication No. 2010-509774
[專利文獻7]美國專利第7767985號說明書 [Patent Document 7] US Patent No. 7767985
[非專利文獻1]B. L. Henke、E. M. Gullikson and J. C. Davis、X-ray interactions:photoabsorption、scattering、transmission and reflection at E=50~30000 eV、Z=1~92、Atomic Data and Nuclear Data Tables Vol. 54 (No. 2)、181 - 342 (July 1993) [Non-Patent Document 1] B. L. Henke, E. M. Gullikson and J. C. Davis, X-ray interactions: photoabsorption, scattering, transmission and Reflection at E=50~30000 eV, Z=1~92, Atomic Data and Nuclear Data Tables Vol. 54 (No. 2), 181 - 342 (July 1993)
[非專利文獻2]Y. A. Shroff等. “EUV pellicle Development for Mask Defect Control”、Emerging Lithographic Technologies X、Proc. of SPIE Vol. 6151、615104 (2006) [Non-Patent Document 2] Y. A. Shroff et al. "EUV pellicle Development for Mask Defect Control", Emerging Lithographic Technologies X, Proc. of SPIE Vol. 6151, 615104 (2006)
然而,上述第1膜結構為雖然使用碳C作為消光係數k較低之元素但防塵保護膜直接接觸於EUV用掩膜表面之結構,掩膜面與護膜用膜之一部分之焦點重疊,因此有無法發揮作為護膜之性能之可能性。又,有CNT之結構控制極難且製造成本變高之虞。因此,第1膜結構不現實。 However, in the first film structure, although the carbon C is used as an element having a low extinction coefficient k, the dustproof protective film directly contacts the surface of the mask for EUV, and the mask surface overlaps with the focus of a portion of the film for the protective film. There is a possibility that the performance as a protective film cannot be exerted. Moreover, the structure control of CNT is extremely difficult and the manufacturing cost becomes high. Therefore, the first film structure is not realistic.
第2膜結構即使使用k較低之Si,若欲確保50%以上之EUV光通過2次護膜用膜時之透過率,亦需要將膜之厚度設為200nm以下。因此,為了獲得較高之透過率,而需要膜厚極薄之平膜,難以確保膜自身之強度。進而,於使用Si製作護膜用膜之情形時,若護膜用膜因衝擊等而破損,則存在其破片附著於EUV用掩膜表面上之情況。於該情形時,會產生成為不僅不會作為護膜用膜發揮功能而且難以去除之污染物粒子之問題。 In the second film structure, even if Si having a low k is used, it is necessary to set the thickness of the film to 200 nm or less in order to ensure the transmittance of 50% or more of EUV light passing through the film for the secondary film. Therefore, in order to obtain a high transmittance, a flat film having a very thin film thickness is required, and it is difficult to ensure the strength of the film itself. Further, when a film for a film is formed by using Si, if the film for a film is damaged by impact or the like, the film may be adhered to the surface of the mask for EUV. In this case, there is a problem that it becomes a contaminant particle which does not function as a film for a film and is difficult to remove.
第3膜結構為對確保膜強度有效之構成,可使膜厚變薄。然而,支持膜自身對於向EUV用掩膜之入射光及來自EUV用掩膜之反射光發揮障礙物或限制視野之功能,與平膜單獨之透過率相比使透過率下降30~60%左右。又,於使用除碳C以外者作為護膜用膜之原材料之情形時,破損時會產生污染物粒子之問題。 The third film structure is configured to ensure the film strength, and the film thickness can be made thin. However, the support film itself functions as an obstacle or a field of view for the incident light to the EUV mask and the reflected light from the EUV mask, and the transmittance is reduced by about 30 to 60% as compared with the transmittance of the flat film alone. . Further, when a material other than the carbon C is used as a material for the film for a film, the problem of the contaminant particles is generated at the time of breakage.
第4膜結構不僅確保相對於EUV光高透過性,而且就大幅改善關於膜厚之制約之方面而言較第2膜結構及第3膜結構具有優越性。然而,專利文獻6所示之EUV護膜用膜存在以下各種問題。即,於與第3 膜結構同樣將包含除C以外之元素之氣凝膠膜設為EUV用護膜用膜之情形時,若EUV用護膜用膜因衝擊等任何原因而破損,則會產生成為難以去除之污染物粒子之問題。 The fourth film structure not only ensures high permeability with respect to EUV light, but also has superiority to the second film structure and the third film structure in terms of greatly improving the film thickness. However, the film for an EUV film shown in Patent Document 6 has the following various problems. That is, with the third In the case where the film structure of the film for EUV is used as a film for a film for EUV, the film for EUV film is damaged by any cause such as impact, and it becomes a pollution which is difficult to remove. The problem of particles.
又,於將專利文獻7所示之CNT膜用作氣凝膠膜之情形時,亦存在以下之各種問題。即便使用直徑1~2nm、纖維長為數10μm之CNT形成膜厚極薄為1.0~5.0nm之氣凝膠膜,亦無法獲得充分之機械膜強度。另一方面,若欲獲得充分之機械膜強度,於將視密度提高通常碳之密度1.5g/cm3左右之情形時,無法獲得利用原本之氣凝膠膜所得之較高之透過率。 Further, when the CNT film shown in Patent Document 7 is used as an aerogel film, the following problems also occur. Even if an aerogel film having a film thickness of 1 to 2 nm and a fiber length of 10 μm is formed to have an extremely thin film thickness of 1.0 to 5.0 nm, sufficient mechanical film strength cannot be obtained. On the other hand, in order to obtain sufficient mechanical film strength, when the apparent density is increased by about 1.5 g/cm 3 of the usual carbon density, a high transmittance obtained by using the original aerogel film cannot be obtained.
進而,通常CNT於其製造過程中大量使用消光係數較高之鐵Fe、鈷Co、鎳Ni等金屬觸媒,因此必然含有大量之雜質,若直接使用,則成為消光係數較大之碳膜,無法獲得較高之透過率。又,為了設為僅消光係數較低之碳膜,於去除上述雜質之情形時,亦有其生產性下降且製造成本變得極高之問題。 Further, in general, CNTs use a large amount of metal catalysts such as iron Fe, cobalt Co, and nickel Ni having a high extinction coefficient in the production process, and therefore, they inevitably contain a large amount of impurities, and if used directly, they become carbon films having a large extinction coefficient. Unable to achieve a high transmission rate. Further, in order to provide only a carbon film having a low extinction coefficient, when the above impurities are removed, there is a problem that productivity is lowered and manufacturing cost is extremely high.
本發明之目的在於提供一種具有對EUV光之高透過性,具有實用上充分之物理強度與耐久性,並且可容易地去除膜破片,且生產性優異之護膜用膜及護膜。 An object of the present invention is to provide a film for a film and a film which have high permeability to EUV light, have practically sufficient physical strength and durability, and can easily remove film fragments and have excellent productivity.
本發明者為了解決上述問題而進行了潛心研究,結果發現,藉由將護膜用膜之原材料設為通用之碳,可生產性良好且廉價地提供下述多孔膜:即便萬一膜之一部分破損而附著於EUV用掩膜表面之情形時,亦可容易地去除,並且具有可用於護膜之孔徑/孔徑分佈及視密度,從而可解決上述問題。 In order to solve the above problems, the present inventors have conducted intensive studies, and as a result, it has been found that the raw material of the film for a film is made of a common carbon, and the following porous film can be provided with good productivity and at low cost: even if one part of the film When it is damaged and adhered to the surface of the mask for EUV, it can be easily removed, and has a pore size/aperture distribution and an apparent density which can be used for the film, thereby solving the above problems.
即,本發明之一方面之護膜用膜係由碳多孔體膜構成,膜厚D為100nm~63μm。 In other words, the film for a film of one aspect of the present invention is composed of a carbon porous film, and has a film thickness D of 100 nm to 63 μm.
於一實施形態中,波長13.5nm之極紫外光通過1次時的透過率T 為84%以上,且極紫外光通過1次時碳多孔體膜之由細孔造成的散射量△可為10%以下。 In one embodiment, the transmittance T of the extreme ultraviolet light having a wavelength of 13.5 nm passes through one time. When the amount of the extreme ultraviolet light is one, the amount of scattering Δ caused by the pores of the carbon porous film may be 10% or less.
於一實施形態中,於碳多孔體膜中,質量除以體積所得之視密度可為1.0×10-3~2.1g/cm3。 In one embodiment, the apparent density obtained by dividing the mass by the volume in the carbon porous film may be 1.0 × 10 -3 to 2.1 g/cm 3 .
於一實施形態中,於將極紫外光之波長λ設為13.5nm,將石墨之密度W設為2.25g/cm3,將碳多孔體膜之視密度(g/cm3)設為ρ,且將膜厚設為D(nm)時,碳多孔體膜可具有滿足以下各式(1)~(5)之結構參數,α≦30(α:細孔尺寸參數) (1) In one embodiment, the wavelength λ of the extreme ultraviolet light is 13.5 nm, the density W of the graphite is 2.25 g/cm 3 , and the apparent density (g/cm 3 ) of the carbon porous film is ρ. When the film thickness is D (nm), the carbon porous film may have structural parameters satisfying the following formulas (1) to (5), α ≦ 30 (α: pore size parameter) (1)
0.335≦Nd≦13(N:膜厚方向上之細孔數(個),d:細孔之壁厚(nm)) (2) 0.335≦Nd≦13 (N: the number of pores in the film thickness direction (number), d: the wall thickness of the pores (nm)) (2)
αλ/d≦81(λ:曝光波長(nm)) (3) Λλ/d≦81 (λ: exposure wavelength (nm)) (3)
其中,上述N、d為N=-1+{(W-ρ)1/3/W1/3}+{D(W-ρ)1/3/αλW1/3}(D:膜厚(nm))(4) Wherein, N and d are N=-1+{(W-ρ) 1/3 /W 1/3 }+{D(W-ρ) 1/3 /αλW 1/3 } (D: film thickness ( Nm))(4)
d=-αλ+{αλW1/3/(W-ρ)1/3} (5)。 d=-αλ+{αλW 1/3 /(W-ρ) 1/3 } (5).
於一實施形態中,於將極紫外光之波長λ設為13.5nm,將石墨之密度W設為2.25g/cm3,將碳多孔體膜之視密度(g/cm3)設為ρ,且將膜厚(nm)設為D時,碳多孔體膜可具有滿足以下各式(6)~(9)之結構參數,α≦30(α:細孔尺寸參數) (6) In one embodiment, the wavelength λ of the extreme ultraviolet light is 13.5 nm, the density W of the graphite is 2.25 g/cm 3 , and the apparent density (g/cm 3 ) of the carbon porous film is ρ. When the film thickness (nm) is D, the carbon porous film may have structural parameters satisfying the following formulas (6) to (9), and α≦30 (α: pore size parameter) (6)
αλ/d≦81(λ:曝光波長(nm)) (7) Λλ/d≦81 (λ: exposure wavelength (nm)) (7)
0.08g/cm3≦ρ≦0.7g/cm3 (8) 0.08g/cm 3 ≦ρ≦0.7g/cm 3 (8)
D:100≦D≦850 (9)。 D: 100≦D≦850 (9).
本發明之另一方面之護膜具備上述護膜用膜、及供護膜用膜貼附之框架。 A protective film according to another aspect of the present invention includes the above-mentioned film for a protective film and a frame to which a film for a protective film is attached.
於一實施形態中,可框架於與貼附護膜用膜之面相反之面設置有配設用以與光微影掩膜接合之掩膜黏著劑的槽。 In one embodiment, a groove having a mask adhesive for bonding to the photolithography mask may be provided on a surface opposite to the surface on which the film for the film is attached.
於一實施形態中,可框架之於與支持護膜用膜之面相反之面設置用以與光微影掩膜接合之電磁鐵。 In one embodiment, an electromagnet for bonding to the photolithography mask may be provided on a surface opposite to the surface of the film for supporting the film.
根據本發明,可製成具有對EUV光之高透過性,具有實用上充分之物理強度與耐久性,並且可容易地去除膜破片,且生產性優異者。 According to the present invention, it is possible to produce a high permeability to EUV light, to have practically sufficient physical strength and durability, and to easily remove film fragments, and to have excellent productivity.
1‧‧‧護膜用膜 1‧‧ ‧ film for film
2‧‧‧膜接著劑 2‧‧‧membrane adhesive
3‧‧‧框架 3‧‧‧Frame
4‧‧‧掩膜黏著劑 4‧‧‧ mask adhesive
5‧‧‧通氣孔 5‧‧‧vents
6‧‧‧槽 6‧‧‧ slots
7、8‧‧‧槽 7, 8‧‧‧ slots
10‧‧‧護膜 10‧‧‧Shield
11‧‧‧線芯 11‧‧‧core
12‧‧‧導電性線圈 12‧‧‧ Conductive coil
13‧‧‧電磁鐵 13‧‧‧Electromagnet
圖1(a)係表示消光係數與透過率及反射率之關係之曲線圖,(b)係表示折射率與透過率及反射率之關係之曲線圖。 Fig. 1(a) is a graph showing the relationship between the extinction coefficient and the transmittance and the reflectance, and (b) is a graph showing the relationship between the refractive index and the transmittance and the reflectance.
圖2係表示波長與折射率及消光係數之關係之曲線圖。 Fig. 2 is a graph showing the relationship between the wavelength and the refractive index and the extinction coefficient.
圖3係表示視密度與折射率及消光係數之關係之曲線圖。 Fig. 3 is a graph showing the relationship between apparent density and refractive index and extinction coefficient.
圖4係表示碳多孔體膜之結構模型之模式圖。 Fig. 4 is a schematic view showing a structural model of a carbon porous body film.
圖5係表示碳多孔體膜之製造步驟之圖。 Fig. 5 is a view showing a manufacturing step of a carbon porous body film.
圖6係表示一實施形態之護膜之立體圖。 Fig. 6 is a perspective view showing a protective film of an embodiment.
圖7係表示利用圖6之XII-XII線之剖面構成之圖。 Fig. 7 is a view showing a configuration of a cross section taken along line XII-XII of Fig. 6.
圖8(a)、(b)係表示框架之剖面構成之圖。 8(a) and 8(b) are views showing a cross-sectional structure of the frame.
圖9(a)、(b)係表示框架之剖面構成之圖。 9(a) and 9(b) are views showing a cross-sectional structure of the frame.
以下,參照隨附圖式對本發明之較佳實施形態詳細地進行說明。再者,於圖式之說明中對相同或相當之元件附上相同符號,並省略重複之說明。 Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the description of the drawings, the same or equivalent components are denoted by the same reference numerals, and the repeated description is omitted.
關於本實施形態,以下於「1.本實施形態中所使用之用語之定義或說明」進行說明後,依照「2.本實施形態之護膜用膜」、「3.本實施形態之護膜」之順序具體地進行說明。 In the following description, "1. Definition or description of the terms used in the present embodiment" will be described below. "2. Film for protective film of the present embodiment", "3. Protective film of the present embodiment" The order of the details will be specifically described.
所謂本實施形態之基準值,表示於達成本實施形態之問題上較佳之護膜用膜之透過率、散射量及膜厚之3種物性值的值。 The reference value of the present embodiment is a value indicating three kinds of physical property values of the transmittance, the scattering amount, and the film thickness of the film for a film which is preferable in the problem of the present embodiment.
護膜用膜之透過率T(以下亦記載為T,單位為%)之值較佳為EUV光微影中所使用之1片反射鏡之反射率之70%以上,設為T之基準值。曝光時,通常EUV(Extreme Ultra Violet:極紫外)光係以入射角θ=6°於EUV用掩膜面被入射、反射,並往返通過2次覆蓋EUV用掩膜面之護膜用膜,因此通過1次護膜用膜之情形時之較佳之T成為84%以上(因為若通過2次,則成為84%×84%=70%)。同樣地為了於通過2次時獲得80%以上、90%以上之T,通過1次時之必需之T分別成為89%以上、95%以上。以下將關於該T之基準值稱作「透過率基準值」,將84%、89%、95%之基準值分別稱作第1透過率基準(T1)、第2透過率基準(T2)、第3透過率基準(T3)。 The value of the transmittance T of the film for a film (hereinafter also referred to as T, the unit is %) is preferably 70% or more of the reflectance of one mirror used in the EUV photolithography, and is set as a reference value of T. . In the case of exposure, the EUV (Extreme Ultra Violet) light is incident on the mask surface of the EUV at an incident angle of θ=6°, and passes through the film for covering the mask surface of the EUV mask twice. Therefore, in the case of passing the film for a film for one time, T is preferably 84% or more (because it is 84% × 84% = 70% when passed twice). In the same manner, in order to obtain 80% or more and 90% or more of T when the second pass is obtained, the T required for the first pass is 89% or more and 95% or more, respectively. Hereinafter, the reference value of the T is referred to as a "transmittance reference value", and the reference values of 84%, 89%, and 95% are referred to as a first transmittance standard (T1) and a second transmittance standard (T2), respectively. Third transmittance benchmark (T3).
護膜用膜為多孔膜,因此關於所產生之散射量(以下亦記載為△,單位為%),若其值較大,則不僅T變小,而且於曝光時於EUV用掩膜表面產生電路圖像模糊。因此,期待散射量之值儘可能地小,不存在明確之基準值。於本實施形態中,將通過1次護膜用膜之情形時之認為較佳之範圍值散射量之上限設為「散射量基準值」,將10%、5%、1%之基準值分別稱作第1散射量基準(△1)、第2散射量基準(△2)、第3散射量基準(△3)。再者,關於散射量,本發明者認為往返通過2次覆蓋EUV用掩膜面之護膜用膜之情形時之散射量大致為通過1次時之散射量之2倍。 Since the film for the film is a porous film, the amount of scattering generated (hereinafter also referred to as Δ, the unit is %), if the value is large, not only T is small but also occurs on the surface of the EUV mask during exposure. The circuit image is blurred. Therefore, it is expected that the value of the amount of scattering is as small as possible, and there is no clear reference value. In the present embodiment, the upper limit of the range value scattering amount which is considered to be preferable when the film for the first time film is used is referred to as the "scattering amount reference value", and the reference values of 10%, 5%, and 1% are respectively referred to as The first scattering amount reference (Δ1), the second scattering amount reference (Δ2), and the third scattering amount reference (Δ3) are used. In the case of the amount of scattering, the inventors of the present invention considered that the amount of scattering when the membrane for covering the mask for EUV is covered twice is twice as large as the amount of scattering when passing through the first time.
護膜用膜之膜厚(以下亦記載為D,單位為nm)對膜強度(膜之彎曲剛度)、膜之使用容易性造成較大影響。若為使用先前之Si單質之平膜之護膜用膜,為了於往返通過2次護膜用膜時獲得70%以上之T,不得不使D為50~100nm。藉由如本實施形態般使用碳多孔膜,可保 持維持透過率之狀態而加厚D。因此將D=100nm以上設為本實施形態之必需最低限度之膜厚。膜厚D較佳為300nm以上,更佳為500nm以上。以下將關於該D之基準值稱作「膜厚基準值」,將100nm、300nm、500nm之基準分別稱作第1膜厚基準(D1)、第2膜厚基準(D2)、第3膜厚基準(D3)。 The film thickness of the film for a film (hereinafter also referred to as D, the unit is nm) greatly affects the film strength (bending rigidity of the film) and the ease of use of the film. In order to obtain a film for a film of a flat film of the Si element, it is necessary to obtain D of 50 to 100 nm in order to obtain a T of 70% or more when passing through the film for the film twice. By using a carbon porous film as in the present embodiment, it is possible to protect Thicken D by maintaining the transmittance. Therefore, D = 100 nm or more is set as the minimum necessary film thickness of this embodiment. The film thickness D is preferably 300 nm or more, more preferably 500 nm or more. Hereinafter, the reference value of D is referred to as a "film thickness reference value", and the reference of 100 nm, 300 nm, and 500 nm is referred to as a first film thickness reference (D1), a second film thickness reference (D2), and a third film thickness, respectively. Benchmark (D3).
[本實施形態之護膜用膜之結構模型] [Structure model of film for protective film of the present embodiment]
本實施形態之護膜用膜係由碳多孔膜構成,護膜用膜之膜厚D為100nm~63μm。又,本實施形態之護膜用膜較佳為具有下述特定結構。以下對用於規定護膜用膜之結構之前提、碳多孔膜之結構模型及各結構參數進行說明。 The film for a film of the present embodiment is composed of a carbon porous film, and the film thickness D of the film for a film is 100 nm to 63 μm. Further, the film for a protective film of the present embodiment preferably has the following specific structure. Hereinafter, a structure model for specifying a film for a film, a structural model of the carbon porous film, and each structural parameter will be described.
(前提1) (Premise 1)
現實之碳多孔膜並非細孔進行單分散(製成細孔之孔徑、壁厚或柱粗、形狀等相同且其各種細孔之集合狀態實現均勻之結構模型)而成,而採取各種細孔混雜之多分散而成之結構。然而,於本實施形態中為了簡化議論,而使現實所得之碳多孔膜與包括下述各種單分散之立方體殼狀或立方體框狀之細孔之碳多孔膜近似(以下依序將各者稱作立方體壁群細孔模型、立方體軸群細孔模型),並且可用結構參數規定其結構。 The realistic carbon porous film is not formed by monodispersion of fine pores (a pore size, a wall thickness, a column thickness, a shape, and the like, and a uniform structural model of various pores), and various pores are adopted. A mixture of mixed structures. However, in the present embodiment, in order to simplify the discussion, the carbon porous film obtained in reality is similar to the carbon porous film including the monodisperse cubic shell-shaped or cubic-frame-shaped pores described below (hereinafter, each of them is called It is a cubic wall group pore model, a cubic shaft group pore model, and its structure can be specified by structural parameters.
(前提2) (Premise 2)
室溫下之石墨(g-C)之密度W、非晶質碳(a-C)之密度之值分別為W為2.25~2.26g/cm3(於本實施形態中設為W=2.25g/cm3)、a-C之密度為1.8~2.1g/cm3。因此,實際之碳之密度根據其結晶度而採取1.8~2.26g/cm3之範圍內之值。 The density W of the graphite (gC) and the density of the amorphous carbon (aC) at room temperature are respectively W of 2.25 to 2.26 g/cm 3 (in the present embodiment, W = 2.25 g/cm 3 ) The density of aC is 1.8~2.1g/cm 3 . Therefore, the actual carbon density takes a value in the range of 1.8 to 2.26 g/cm 3 depending on the crystallinity thereof.
如此,構成現實之碳多孔膜之細孔之壁或柱之碳並非全部由石墨之結晶形成,於本實施形態中設為由石墨之微晶無配向地凝聚而成之多結晶體形成者。碳之結晶度較低,若其密度小於2.25g/cm3,則 可如下述[補記]中說明般根據該密度下之碳之光學常數(尤其是k)增大壁厚或柱粗d或實質上之壁厚dN或柱粗dN1/2。 In this way, not all of the pores of the pores or the pillars of the carbon porous membrane constituting the actual carbon are formed of crystals of graphite. In the present embodiment, the polycrystals formed by the aggregation of the crystallites of graphite in an unaligned manner are formed. The crystallinity of carbon is relatively low. If the density is less than 2.25 g/cm 3 , the wall thickness or column thickness d may be increased according to the optical constant (especially k) of carbon at the density as described in the following [Additional Note]. Substantial wall thickness dN or column thickness dN 1/2 .
基於(前提1)及(前提2),作為本實施形態之碳多孔膜之細孔結構模型,考慮圖4所示之壁厚或柱粗為d且一邊之長度為L0之立方體殼狀或立方體框狀之細孔(孔徑L)於厚度方向堆積N個而成之結構,將其分別依序稱作立方體壁群細孔模型、立方體軸群細孔模型。再者,鋪滿立方體之各層以於厚度方向上各立方體之四角之頂點位於鄰接之立方體之面之中心之方式於厚度方向上發生偏離並堆積。藉由假定細孔結構模型,於L、L0、d之間,於膜厚D、細孔之積層數N、細孔尺寸參數α、d之間,各者之關係成立。 Based on (premise 1) and (premise 2), as the pore structure model of the carbon porous film of the present embodiment, a cubic shell or cube having a wall thickness or a column thickness d and a length L0 on one side is considered. The frame-shaped pores (pore size L) are formed by stacking N in the thickness direction, and are sequentially referred to as a cubic wall group pore model and a cubic axis group pore model. Furthermore, the layers covered with the cube are offset and stacked in the thickness direction in such a manner that the apexes of the four corners of each cube in the thickness direction are located at the center of the face of the adjacent cube. By assuming a pore structure model, the relationship between each of the L, L0, and d is between the film thickness D, the number of layers N of the pores, and the pore size parameters α and d.
L0=L+d (10) L0=L+d (10)
D=Nαλ+(N+1)d (11) D=Nαλ+(N+1)d (11)
進而,可使用下述第1及第2結構參數規定本實施形態之多孔膜之結構,於各結構參數之間,關於立方體壁群細孔模型,式(12)~式(14)之關係成立,關於立方體軸群細孔模型,式(15)~式(17)之關係成立。 Further, the structure of the porous film of the present embodiment can be defined by using the first and second structural parameters described below, and the relationship between the formulas (12) and (14) is established between the respective structural parameters regarding the cubic wall group pore model. Regarding the cubic axis group pore model, the relationship of the formulas (15) to (17) holds.
N=-1+{(W-ρ)1/3/W1/3}+{D(W-ρ)1/3/αλW1/3} (12) N=-1+{(W-ρ) 1/3 /W 1/3 }+{D(W-ρ) 1/3 /αλW 1/3 } (12)
d=αλ{-1+W1/3/(W-ρ)1/3} (13) d=αλ{-1+W 1/3 /(W-ρ) 1/3 } (13)
ρ=W[(L03-L)/L03]=W[{(1+αλ/d)3-(αλ/d)3}/(1+αλ/d)3](14) ρ=W[(L0 3 -L)/L0 3 ]=W[{(1+αλ/d) 3 -(αλ/d) 3 }/(1+αλ/d) 3 ](14)
N=8.32×10-1{D/(αλ)}-10.64{ρ}+3.54×10-2{D1/2}+7.65×10-1(15) N=8.32×10 -1 {D/(αλ)}-10.64{ρ}+3.54×10 -2 {D 1/2 }+7.65×10 -1 (15)
d=7.90×10-1{ραλ}+8.43×10-1{(αλ)1/2}-7.93×10-1{ρ-1/3}-7.60×10-1 (16) d=7.90×10 -1 {ραλ}+8.43×10 -1 {(αλ) 1/2 }-7.93×10 -1 {ρ -1/3 }-7.60×10 -1 (16)
ρ=W[{8(d/2)2×(L+d/2)+4(d/2)2×L}/L03]=W(1+3αλ/d)/(1+αλ/d)3 (17) ρ=W[{8(d/2) 2 ×(L+d/2)+4(d/2) 2 ×L}/L0 3 ]=W(1+3αλ/d)/(1+αλ/ d) 3 (17)
關於立方體壁群細孔模型,式(11)及式(14)係使用第1結構參數群表示第2結構參數群者,式(12)及式(13)係使用第2結構參數群表示第1結構參數群者。 For the cubic wall group pore model, Equations (11) and (14) use the first structural parameter group to indicate the second structural parameter group, and Equations (12) and (13) use the second structural parameter group to indicate 1 structural parameter group.
關於立方體軸群細孔模型,式(11)及式(17)係使用第1結構參數群表示第2結構參數群者,式(15)及式(16)係使用第2結構參數群表示第1結構參數群者。 Regarding the cubic axis group pore model, Equations (11) and (17) use the first structural parameter group to indicate the second structural parameter group, and Equations (15) and (16) use the second structural parameter group to indicate 1 structural parameter group.
[結構參數群] [structural parameter group]
本實施形態中之碳多孔體膜之較佳結構取決於以下之3種物性值、T、△、D之各基準值。而且,該碳多孔膜之結構設為以孔徑(L)或細孔尺寸參數(α)、形成細孔之壁厚或柱粗(d)、細孔於膜厚方向上之積層數(N)作為第1結構參數群,進而以L(或α)、D、以及記載為ρ(ap)或ρ之碳多孔膜之視密度作為第2結構參數群,並可利用該等結構參數進行規定者。第1結構參數群為微觀結構參數,於規定碳多孔膜之結構上較為合適,但直接、間接地測量、觀測較為困難,難以於製造製程上使用該等值控制、規定膜之結構。第2結構參數群為宏觀結構參數,直接、間接地測量、觀測相對容易,於製造製程上使用該等值容易控制結構,不根據該等值假定細孔結構模型而無法唯一地決定微觀結構。 The preferred structure of the carbon porous film in the present embodiment depends on the following three physical property values, the respective reference values of T, Δ, and D. Further, the carbon porous film has a structure in which the pore diameter (L) or the pore size parameter (α), the wall thickness of the pores or the column thickness (d), and the number of layers of the pores in the film thickness direction (N) Further, as the first structural parameter group, the apparent density of L (or α), D, and the carbon porous film described as ρ (ap) or ρ is used as the second structural parameter group, and can be specified by using these structural parameters. . The first structural parameter group is a microscopic structural parameter, and is suitable for the structure of the carbon porous membrane. However, it is difficult to directly and indirectly measure and observe, and it is difficult to use the equivalent value control and the structure of the predetermined membrane in the manufacturing process. The second structural parameter group is a macroscopic structural parameter, and it is relatively easy to directly and indirectly measure and observe, and it is easy to control the structure by using the equivalent value in the manufacturing process, and the pore structure model is not assumed based on the equivalent value, and the microstructure cannot be uniquely determined.
於兩者之結構參數群之間,若假定碳多孔膜之結構模型,則於立方體壁群細孔模型中式(12)~式(14)成立,於立方體軸群細孔模型中如式(15)~式(17)之具體關係成立,但不能經常獲取嚴密之對應。 Between the structural parameter groups of the two, if the structural model of the carbon porous membrane is assumed, the equations (12) to (14) are established in the cubic wall group pore model, and the equation is in the cubic axis group pore model. The specific relationship of the formula (17) is established, but the strict correspondence cannot be obtained frequently.
於本實施形態中,適當使用兩結構參數群對內容進行說明,於兩者產生矛盾之情形時,於滿足基準值之範圍內,現實中優先使用容易規定碳多孔膜之結構之第2結構參數群。 In the present embodiment, the content is described by using two structural parameter groups as appropriate. When there is a contradiction between the two, in the range where the reference value is satisfied, in reality, the second structural parameter that easily defines the structure of the carbon porous film is preferentially used. group.
[孔徑L、細孔半徑r] [Aperture L, pore radius r]
所謂孔徑(L),使根據氣體吸附式細孔分佈測定法之吸附等溫線 所求之細孔分佈曲線之波峰細孔半徑r(peak)、最大峰值半徑r(max)(於細孔分佈之波峰與細孔分佈之基準之交點處,意指較大側之細孔半徑值)之值成為2倍之值(稱為2倍值)分別設為L(peak)、L(max),單位設為[nm]。再者,r(max)、L(max)用於議論△之各基準之上限之情形,於其以外之情形時,只要無特別說明,則使用L(peak)作為L,使用r(peak)作為r。於實驗、經驗上而言,如林順一、堀河俊英、碳、No.236、15-21(2009)[以下設為參考文獻A]之圖6、圖8所記載般,r(max)於以r之對數刻度表示細孔分佈圖之橫軸且將縱軸設為積分細孔容積之dV/d[Log(r)]之細孔分佈曲線中,多數情況下大致為r(peak)之1.5~3倍左右。又,於細孔分佈之波峰較低且難以理解r(max)之情形時,將r(peak)設為r(max)之代替值。 The so-called pore size (L), the adsorption isotherm according to the gas adsorption type pore distribution measurement method The peak pore radius r (peak) and the maximum peak radius r (max) of the pore distribution curve (at the intersection of the peak of the pore distribution and the reference of the pore distribution, the pore radius of the larger side) The value of the value is twice the value (referred to as the double value), and is set to L (peak) and L (max), and the unit is set to [nm]. Furthermore, r(max) and L(max) are used to discuss the upper limit of each reference of △, and in other cases, L(peak) is used as L, and r(peak) is used unless otherwise specified. As r. In terms of experiments and experience, r(max) is as shown in Fig. 6 and Fig. 8 of Lin Shunyi, Luhe Junying, Carbon, No. 236, 15-21 (2009) [hereinafter referred to as Reference A]. In the logarithmic scale of r, the horizontal axis of the pore distribution map is set, and the vertical axis is set as the pore distribution curve of dV/d[Log(r)] of the integrated pore volume, and in most cases, it is roughly r(peak). 1.5 to 3 times or so. Further, when the peak of the pore distribution is low and it is difficult to understand r(max), r(peak) is set as a substitute value of r(max).
於氣體吸附式細孔分佈測定時,預先將通常碳化物試樣於200~250℃下真空加熱2~15小時後,於液體氮溫度下進行氮之吸附脫附等溫測定,根據該吸附脫附等溫線利用DH解析法或BJH解析法求出細孔分佈曲線。於本實施形態中,為了求出孔徑而使用該方法。 In the gas adsorption type pore distribution measurement, the usual carbide sample is heated under vacuum at 200 to 250 ° C for 2 to 15 hours, and then subjected to nitrogen adsorption and desorption isotherm measurement at a liquid nitrogen temperature, according to the adsorption. The isotherm is obtained by DH analysis or BJH analysis with an isotherm. In the present embodiment, this method is used to obtain the aperture.
[細孔尺寸參數α] [Pore size parameter α]
所謂細孔尺寸參數(α),於將孔徑設為L,且將曝光所使用之EUV光之波長設為λ時,為利用α=L/λ (18) The pore size parameter (α) is obtained by using α=L/λ (18) when the aperture is set to L and the wavelength of the EUV light used for exposure is λ.
所定義之值,係指利用相對於λ之倍數表示孔徑者。再者,本申請案之α成為通常之Mie散射理論中所使用之尺寸參數Λ(≡2πγ/λ=πα,此處γ為球狀散射體之半徑,π為圓周率)之約1/3。 The value defined refers to the use of the aperture relative to λ to represent the aperture. Furthermore, α in the present application becomes about 1/3 of the size parameter Λ (≡2πγ/λ=πα, where γ is the radius of the spherical scatterer and π is the pi) used in the usual Mie scattering theory.
再者,於立方體壁群細孔模型中,以壁劃分各個細孔,因而可實質上定義孔徑。於立方體軸群細孔模型中,為連結各個細孔並如圖4(b)所示形式上(假想)加以區分之值。 Furthermore, in the cubic wall group pore model, each pore is divided by a wall, so that the pore diameter can be substantially defined. In the cubic axis group pore model, values for distinguishing the pores and distinguishing them formally (imaginary) as shown in Fig. 4(b).
[細孔之壁厚或柱粗d] [Thick wall thickness or column thickness d]
所謂本實施形態中之細孔之壁厚或柱粗(d),係指於立方體壁群細孔模型中劃分構成碳多孔膜之各個細孔之(成為細孔之障壁)碳壁之平均厚度,為立方體壁群之壁之厚度。於立方體軸群細孔模型中,為形式上區分構成碳多孔膜之細孔與細孔之碳棒(柱)之平均粗度,為立方體之框之粗度。單位設為[nm]。 The thickness of the pores or the thickness of the column (d) in the present embodiment means the average thickness of the carbon walls of the pores constituting the carbon porous film (the barriers to be pores) in the pore wall model of the cubic wall group. , the thickness of the wall of the cube wall group. In the cubic axis group pore model, the average thickness of the carbon rod (column) which constitutes the pores and pores constituting the carbon porous membrane is the thickness of the cube frame. The unit is set to [nm].
d可使用穿透式電子顯微鏡(TEM)或掃描式電子顯微鏡(SEM)拍攝多孔膜之剖面照片,對其進行圖像處理而求出。然而,高倍率下之觀察本身極為困難,進而自剖面照片所得之資訊本身為局部,不確定是否為多孔膜之平均壁厚,因此於本實施形態中,於立方體壁群細孔模型中將藉由式(13)根據α、ρ(ap)算出之值設為d,於立方體軸群細孔模型中將藉由式(16)根據α、ρ(ap)算出之值設為d。 d A cross-sectional photograph of the porous film can be taken by a transmission electron microscope (TEM) or a scanning electron microscope (SEM), and image processing can be performed. However, the observation at high magnification is extremely difficult in itself, and the information obtained from the cross-sectional photograph itself is local, and it is uncertain whether it is the average wall thickness of the porous membrane. Therefore, in the present embodiment, it will be borrowed from the cubic wall group pore model. The value calculated from the equation (13) from α and ρ(ap) is d, and the value calculated from α and ρ(ap) by the equation (16) in the cubic axis group pore model is d.
關於d之值,若考慮到碳原子之大小為約0.33nm且石墨(視為石墨烯片材之積層體)之層間距離為0.335nm,1片石墨烯片材之厚度約0.335nm成為d之下限值。然而,若為1層或2層(d=約0.67nm)石墨烯片材,於孔徑較大之情形(例如α>4)或對護膜用膜施加較大之力之情形等時,壁強度或柱強度(膜之彎曲剛度)不充分,因此現實中較佳為石墨烯片材為4層(d=約1.35nm)以上。當然,於孔徑較小之情形(例如α<1)或不對膜施加較大之力之情形時,可使d接近0.335nm。 Regarding the value of d, considering that the size of the carbon atom is about 0.33 nm and the interlayer distance of graphite (considered as a laminate of graphene sheets) is 0.335 nm, the thickness of one sheet of graphene sheet is about 0.335 nm. lower limit. However, in the case of one or two layers (d = about 0.67 nm) of graphene sheets, when a large pore diameter (for example, α>4) or a large force is applied to the film for a film, etc., the wall The strength or the column strength (bending rigidity of the film) is insufficient, so in reality, it is preferable that the graphene sheet has 4 layers (d = about 1.35 nm) or more. Of course, d can be brought close to 0.335 nm in the case where the aperture is small (for example, α < 1) or when a large force is not applied to the film.
[細孔之積層數N] [Number of layers of pores N]
所謂細孔之積層數(N),係指孔徑L之細孔於膜厚方向上之積層數。於本實施形態中,於立方體壁群細孔模型中將藉由式(12)並根據α、ρ(ap)、D算出之值設為N,於立方體軸群細孔模型中將藉由式(15)並根據α、ρ(ap)、D算出之值設為N。N在語言之定義上應為N≧1之整數,亦允許正實數值。本發明者認為小數點以下之數值之尾數部分為反映自單分散之立方體殼狀或立方體框狀之細孔整齊地堆積而成之細孔結構模型的偏離者。 The number of layers (N) of the pores refers to the number of layers of the pores of the pore diameter L in the film thickness direction. In the present embodiment, the value calculated by the equation (12) based on α, ρ(ap), and D is N in the cubic wall group pore model, and is used in the cubic axis group pore model. (15) The value calculated based on α, ρ(ap), and D is set to N. N shall be an integer of N≧1 in the definition of language, and may also allow positive real values. The present inventors considered that the mantissa portion of the numerical value below the decimal point is a deviation reflecting the pore structure model in which the pores of the monodisperse cubic shell shape or the cubic frame shape are neatly stacked.
[視密度ρ(ap)、算術視密度ρ] [visual density ρ (ap), arithmetic apparent density ρ]
所謂視密度ρ(ap),係指使用製成多孔膜內部無細孔者時之膜體積之密度,為以根據膜之外形寸法求出之膜之體積V與膜之質量G之比G/V之形式算出之值。另一方面,所謂算術視密度ρ,以細孔結構模型為基礎,於本實施形態中,若為立方體壁群細孔模型,則將藉由式(14)根據α、ρ(ap)、D算出之值設為ρ,若為立方體軸群細孔模型,則將藉由式(17)根據α、ρ(ap)、D算出之值設為ρ。由於假定(前提1)及(前提2),以下以ρ(ap)=ρ之形式不區分兩者地使用。單位設為[g/cm3]。 The apparent density ρ(ap) is the density of the film volume when no pores are formed inside the porous film, and is the ratio of the volume V of the film and the mass G of the film determined by the film outside the film. The value calculated in the form of V. On the other hand, the arithmetic apparent density ρ is based on the pore structure model. In the present embodiment, if it is a cubic wall group pore model, it will be based on α, ρ(ap), D by the formula (14). The calculated value is ρ, and if it is a cubic axis group pore model, the value calculated from α, ρ(ap), and D by the equation (17) is ρ. Due to assumptions (premise 1) and (premise 2), the following uses ρ(ap)=ρ in the form of no distinction between the two. The unit is set to [g/cm 3 ].
[膜厚D] [film thickness D]
所謂膜厚(D),係指通常之意義中所使用之片材、薄膜(film)、膜之厚度。本實施形態之厚度之測定可使用電子顯微鏡(SEM)以不接觸之方式空開1mm以上之間隔於10處以上對多孔膜進行拍攝,以對其尺寸進行平均所得之值之形式求出。單位通常使用[nm],視需要亦使用[μm]。 The film thickness (D) refers to the thickness of a sheet, a film, or a film used in the usual sense. The measurement of the thickness of the present embodiment can be carried out by using an electron microscope (SEM) to photograph the porous film at intervals of 1 mm or more at intervals of 1 mm or more, and to obtain a value obtained by averaging the dimensions. The unit usually uses [nm] and [μm] is used as needed.
[細孔形狀] [Pin shape]
多孔膜之平均細孔形狀如參考文獻A、松岡秀樹、結晶學會刊、No.41、213-226(1999)、西川惠子、碳、No.191、71-76(2000)中記載般,可根據小角度X射線散射(SAXS)之Debye-Porod區域中之散射強度解析而求出。即,於以散射向量s之函數之形式對X射線散射強度I繪製雙對數圖時,若該直線之斜率為-4、-2、-1,則細孔之形狀分別為球狀、圓盤狀、圓筒狀。 The average pore shape of the porous film is as described in Reference A, Matsuoka Hideki, Crystallography Society, No. 41, 213-226 (1999), Nishikawa Keiko, Carbon, No. 191, 71-76 (2000). It is obtained from the analysis of the scattering intensity in the Debye-Porod region of the small-angle X-ray scattering (SAXS). That is, when the double logarithmic graph is plotted on the X-ray scattering intensity I as a function of the scattering vector s, if the slope of the straight line is -4, -2, -1, the shape of the pores is spherical or disc, respectively. Shaped, cylindrical.
2.本實施形態之護膜用膜與其製造方法 2. Film for protective film of the present embodiment and method for producing the same
2-1.本實施形態之護膜 2-1. The film of this embodiment
關於本實施形態之護膜用膜,以下對每個[技術要點]進行詳細說明。 Each of the [technical points] will be described in detail below with respect to the film for a film of the present embodiment.
[技術要點1] [Technical Point 1]
技術要點1係護膜用膜為多孔膜。於Mie之散射理論(Mie散射本身為由球形粒子引起之散射,定性而言不論形狀)中,關於由球狀粒子(球狀細孔)引起之光散射,於將粒子(細孔)之直徑(孔徑)設為2γ,將入射光之波長設為λ,且使用粒徑尺寸參數Λ(=2πγ/λ)時,於Λ與1相比足夠小(Λ<<1)之情形時,發生瑞利散射,於Λ大致接近1(Λ≒1)之情形時,發生Mie散射,於Λ與1相比足夠大(Λ>>1)之情形時,發生幾何學散射。因此本發明者認為,若為孔徑為Λ≧1之多孔體(多孔膜),則當光於曝光時發生入射時,光於細孔壁或柱與細孔部之界面處散射,不僅無法獲得充分之透過率,而且無法使掩膜之電路圖像正確地於晶圓上成像(參照上述專利文獻6、專利文獻7)。 Technical Point 1 The film for the film is a porous film. In the scattering theory of Mie (Mie scattering itself is caused by scattering by spherical particles, qualitatively regardless of shape), the scattering of light by spherical particles (spherical pores), the diameter of particles (fine pores) (Aperture) is set to 2γ, the wavelength of incident light is λ, and when the particle size size parameter Λ(=2πγ/λ) is used, when Λ is sufficiently smaller than 1 (Λ<<1), it occurs. Rayleigh scattering occurs when the Λ is approximately 1 (Λ≒1), and geometric scattering occurs when Λ is sufficiently large compared to 1 (Λ>>1). Therefore, the present inventors have considered that, in the case of a porous body (porous film) having a pore diameter of Λ≧1, when light is incident upon exposure, light is scattered at the interface of the pore walls or the column and the pore portion, and not only is not obtained. The transmittance is sufficient, and the circuit image of the mask cannot be accurately imaged on the wafer (see Patent Document 6 and Patent Document 7).
然而,可知即便為孔徑為Λ≧1以上之多孔體(多孔膜),細孔壁或柱之折射率與細孔部即真空之折射率1.0相等之情形、或細孔壁或柱之折射率與細孔部(細孔內之空間)之折射率的差△n接近0之情形例如△n=0.04以下之情形時,因無法識別細孔壁與細孔部之界面故而光幾乎未被反射、散射而可直進。 However, it is understood that even in the case of a porous body (porous film) having a pore diameter of Λ≧1 or more, the refractive index of the pore wall or the column is equal to the refractive index of the pore portion, that is, the vacuum of 1.0, or the refractive index of the pore wall or column. When the difference Δn between the refractive indices of the pores (the space in the pores) is close to 0, for example, when Δn = 0.04 or less, since the interface between the pore walls and the pore portions cannot be recognized, the light is hardly reflected. , scattering and straightforward.
圖1表示顯示假定光學常數(折射率n、消光係數k)之值與膜厚D之值之平膜(非多孔膜)的光學常數與入射角θ=6°下之透過率T及反射率R之關係的曲線圖。圖1所示之曲線圖係使用由「Grating Solver Development Company」市售之「G-Solver晶格分析軟體工具(G-Solver)」進行計算所得者。圖1(a)係表示D=100nm、n=1.0之平膜之T及R相對於k之相依性的曲線圖,圖1(b)係表示D=100nm、k=0.0005之平膜之T及R相對於n之相依性的曲線圖。於圖1(a)中,由虛線圍成之區域表示可確保T≧84%之k之區域。根據圖1(a)可知,T因k之稍許變化而發生較大變化,於在非多孔膜中膜厚為100nm左右之情形時,k必須為至少10-3之程度以下才可獲得T≧T1=84%。 1 shows an optical constant of a flat film (non-porous film) showing a value of assuming optical constant (refractive index n, extinction coefficient k) and a film thickness D, and a transmittance T and a reflectance at an incident angle θ=6°. A graph of the relationship of R. The graph shown in Fig. 1 was calculated using the "G-Solver lattice analysis software tool (G-Solver)" commercially available from "Grating Solver Development Company". Fig. 1(a) is a graph showing the dependence of T and R on the flat film of D = 100 nm and n = 1.0 with respect to k, and Fig. 1 (b) shows the flat film T of D = 100 nm and k = 0.0005. And a plot of the dependence of R on n. In Fig. 1(a), the area enclosed by the broken line indicates the area where k of 84% of T≧ can be secured. According to Fig. 1(a), T changes greatly due to a slight change in k. When the film thickness is about 100 nm in the non-porous film, k must be at least 10 -3 or less to obtain T≧. T1 = 84%.
又,於圖1(b)中,由虛線圍成之區域表示將反射率抑制在R≦0.2%之n之區域。根據圖1(b)可知,如上所述若n=0.94~1.4即△n≦0.04,則可抑制來自界面之反射,且T成為最大。 Further, in Fig. 1(b), a region surrounded by a broken line indicates a region where the reflectance is suppressed to n of R ≦ 0.2%. As can be seen from Fig. 1(b), as described above, when n = 0.94 to 1.4, that is, Δn ≦ 0.04, reflection from the interface can be suppressed, and T becomes maximum.
使用多孔膜作為護膜用膜之第1優點是大幅緩和先前之Si單結晶平膜中之50~100nm膜之厚度限制,如下述般T為T1以上且△為△1以下,且D為100nm以上(D1以上),進而可設為300nm以上(D2以上)、500nm以上(D3以上)。 The first advantage of using a porous film as a film for a protective film is to substantially alleviate the thickness limitation of a film of 50 to 100 nm in the conventional Si single crystal flat film. As described below, T is T1 or more and Δ is Δ1 or less, and D is 100 nm. The above (D1 or more) may be 300 nm or more (D2 or more) or 500 nm or more (D3 or more).
使用多孔膜作為護膜用膜之第2優點是,如被稱作瓦楞紙板之波板狀之多孔性包裝紙材與同重量同面積之平膜狀紙板相比彎曲剛度較大般,多孔膜與同重量同面積之平膜(非多孔膜)相比彎曲剛度變大。 The second advantage of using a porous film as a film for a film is that a porous film such as a corrugated board called corrugated paper has a higher bending rigidity than a flat film paper of the same weight, and a porous film The bending rigidity becomes larger than that of the flat film (non-porous film) of the same weight.
瓦楞紙板為內部具有吸管狀之一維延伸之孔之多孔性結構體,與此相對地,本實施形態之多孔膜為三維多孔性結構,因此可謂更容易引起應力集中,且膜之彎曲剛度進而較高。其結果,於使用本實施形態之多孔膜作為護膜用膜之情形時,膜因自重而彎曲之程度小於同面積同重量之其他原材料之平膜。 The corrugated cardboard is a porous structure having a hole in which one end of the suction tube is extended. On the other hand, the porous film of the present embodiment has a three-dimensional porous structure, so that stress concentration is more likely to occur, and the bending rigidity of the film is further Higher. As a result, when the porous film of the present embodiment is used as the film for a protective film, the film is bent by its own weight to a level smaller than that of the other materials of the same area and the same weight.
[技術要點2] [Technical Point 2]
技術要點2是多孔膜由碳構成。使用碳製成多孔膜之第1優點是經多孔膜化之碳之作為光學常數之優越性。通常藉由構成膜之元素之種類與膜之結晶、非晶之結構的比率決定密度,可根據上述非專利文獻1求出EUV區域下之光學常數n、k。實際上為了算出具體之數值,而利用CXRO(The Center for X-ray Optics,X-射線光學中心)之網頁<http://henke.lbl.gov/optical_constants/getdb2.html>。 The technical point 2 is that the porous film is composed of carbon. The first advantage of using a carbon to form a porous film is the superiority of the porous filmed carbon as an optical constant. The density is determined by the ratio of the type of the element constituting the film to the crystal structure of the film and the amorphous structure. The optical constants n and k in the EUV region can be obtained from Non-Patent Document 1 described above. In fact, in order to calculate a specific value, a web page of CXRO (The Center for X-ray Optics) is <http://henke.lbl.gov/optical_constants/getdb2.html>.
關於使用小於非多孔體之密度(通常單純地稱作密度、真密度)之值之多孔膜之視密度ρ作為密度而求出之n、k,若假設結晶、非晶之結構與其比率不變,則其值可視為具有該ρ之多孔膜之光學常數。此處,若將具有視密度ρ與該ρ下之光學常數之平膜(非多孔膜)稱作多孔 膜代替平膜,為了方便起見可根據非專利文獻1求出無視由細孔引起之散射之具有各種ρ之多孔膜代替平膜之n及k。 Regarding n and k obtained by using the apparent density ρ of the porous film which is smaller than the density of the non-porous body (generally referred to simply as density and true density) as the density, it is assumed that the crystal structure and the amorphous structure are unchanged from each other. Then, the value can be regarded as the optical constant of the porous film having the ρ. Here, a flat film (non-porous film) having an apparent density ρ and an optical constant of the ρ is referred to as a porous In place of the flat film, for the sake of convenience, it is possible to obtain n and k of a porous film having various ρ in place of the flat film, regardless of the scattering by the pores, for the sake of convenience.
圖2係表示碳C(密度2.2g/cm3)、矽Si(密度2.33g/cm3)、碳化矽SiC(密度3.2g/cm3)及視密度ρ=0.6g/cm3之C之n及k相對於波長λ之相依性的曲線圖。如圖2所示,Si、SiC之光學常數於λ=12nm附近發生由Si之L吸收端引起之不連續變化,與此相對地,C之光學常數為連續,n單調增加,k單調減少,尤其是於λ≦12nm下k成為C(ρ=0.6g/cm3)小於Si、SiC之值。 2 shows carbon C (density 2.2 g/cm 3 ), 矽Si (density 2.33 g/cm 3 ), lanthanum carbide SiC (density 3.2 g/cm 3 ), and apparent density ρ=0.6 g/cm 3 of C. A plot of the dependence of n and k with respect to wavelength λ. As shown in FIG. 2, the optical constants of Si and SiC are discontinuously changed by the L absorption end of Si in the vicinity of λ=12 nm, whereas the optical constant of C is continuous, n monotonously increases, and k monotonously decreases. In particular, at λ ≦ 12 nm, k becomes C (ρ = 0.6 g / cm 3 ) which is smaller than the values of Si and SiC.
圖3係表示Si、SiC及各種視密度ρ下之C之λ=13.6nm及λ=6.7nm下之光學常數n、k的曲線圖,EUV區域之光學常數與所使用之光之波長與物質之密度有關係,例如與λ=6.7~13.6nm之波長範圍對應,於Si(2.33g/cm3)之情形時,k為9.5×10-3(λ=6.7nm)~1.8×10-3(λ=13.6nm)且n為0.99(λ=6.7nm)~1.0(λ=13.6nm),與此相對地,於碳之情形時,若為石墨(2.25g/cm3),則k為7.6×10-4(λ=6.7nm)~7.2×10-3(λ=13.6nm),且n為0.99(λ=6.7nm~0.96(λ=13.6nm)。 Figure 3 is a graph showing the optical constants n, k at λ = 13.6 nm and λ = 6.7 nm for Si, SiC, and various apparent densities ρ, the optical constants of the EUV region and the wavelengths and substances of the light used. The density is related to, for example, a wavelength range of λ = 6.7 to 13.6 nm, and in the case of Si (2.33 g/cm 3 ), k is 9.5 × 10 -3 (λ = 6.7 nm) to 1.8 × 10 -3 . (λ = 13.6 nm) and n is 0.99 (λ = 6.7 nm) to 1.0 (λ = 13.6 nm). On the other hand, in the case of carbon, if it is graphite (2.25 g/cm 3 ), k is 7.6 × 10 -4 (λ = 6.7 nm) ~ 7.2 × 10 -3 (λ = 13.6 nm), and n is 0.99 (λ = 6.7 nm - 0.96 (λ = 13.6 nm).
此情況表示,若為λ=13.6nm區域,則於製作護膜用膜方面Si較石墨更合適,若為λ=6.7nm區域,倒不如說石墨優異。 In this case, if it is a region of λ=13.6 nm, Si is more suitable than graphite for producing a film for a film, and if it is a region of λ=6.7 nm, it is better than graphite.
進而,於將碳如本實施形態般多孔膜化之情形時,若為ρ=0.6g/cm3之C,則k為2.0×10-4(λ=6.7nm)~1.9×10-3(λ=13.6nm),n為1.0~0.99。若為ρ=0.4g/cm3之C,則k為1.4×10-4(λ=6.7nm)~1.3×10-3(λ=13.6nm),n為1.0(λ=6.7nm)~0.99(λ=13.6nm)。若為ρ=0.2g/cm3之C,則k為6.8×10-5(λ=6.7nm)~6.4×10-4(λ=13.6nm),n為1.0(λ=6.7nm)~1.0(λ=13.6nm)。若為ρ=0.08g/cm3之C,則k為2.7×10-5(λ=6.7nm)~2.6×10-4(λ=13.6nm),n為1.0(λ=6.7nm)~1.0(λ=13.6nm)。 Further, when carbon is formed into a porous film as in the present embodiment, if C is ρ = 0.6 g/cm 3 , k is 2.0 × 10 -4 (λ = 6.7 nm) to 1.9 × 10 -3 ( λ = 13.6 nm), n is 1.0 to 0.99. If C is ρ = 0.4 g/cm 3 , then k is 1.4 × 10 -4 (λ = 6.7 nm) ~ 1.3 × 10 -3 (λ = 13.6 nm), and n is 1.0 (λ = 6.7 nm) to 0.99. (λ = 13.6 nm). If C is ρ = 0.2 g/cm 3 , then k is 6.8 × 10 -5 (λ = 6.7 nm) ~ 6.4 × 10 -4 (λ = 13.6 nm), and n is 1.0 (λ = 6.7 nm) - 1.0 (λ = 13.6 nm). If C is ρ=0.08g/cm 3 , then k is 2.7×10 -5 (λ=6.7nm)~2.6×10 -4 (λ=13.6nm), and n is 1.0 (λ=6.7nm)~1.0. (λ = 13.6 nm).
如此,碳藉由進行多孔膜化並降低視密度,而不僅於λ=6.7nm 區域而且於λ=13.6nm區域具有與Si同等以上之較低之k與接近1.0之n。 Thus, carbon is made into a porous film and reduces the apparent density, not only λ = 6.7 nm. The region also has a lower k equal to or higher than Si and a n close to 1.0 in the region of λ=13.6 nm.
使用碳製作多孔膜之第2優點是即便於萬一護膜用膜破損而附著於掩膜上時亦可容易地去除。例如,如高木紀明等、立命館大學研究報告書、立S22-03、「EUV光微影用掩膜上之碳堆積實驗:清洗技術之評價」、老泉博昭、九州工業大學研究生院工學研究系博士學位論文「使用極紫外線(EUV)之光微影基礎技術」(平成19年3月)中所介紹般,可藉由下述反應而將附著於EUV用掩膜上之碳去除:使用可將有機分子直接分解之VUV光(λ=172nm)、EUV光(λ=13.5nm)本身利用活性氧使其氧化而製成一氧化碳CO或二氧化碳CO2的反應(氧化法)、利用原子狀氫使其還原製成甲烷系烴(CHX)之反應(還原法)。 A second advantage of using a carbon to form a porous film is that it can be easily removed even if the film for a protective film is damaged and adhered to the mask. For example, such as Takagi Kumaki, Ritsumeikan University Research Report, S22-03, "Carbon Stacking Experiment on EUV Photolithography Mask: Evaluation of Cleaning Technology", Laoquan Bozhao, Graduate School of Engineering, Kyushu Institute of Technology The carbon attached to the EUV mask can be removed by the following reaction as described in the Ph.D. thesis "Using Ultraviolet (EUV) Photolithography Basic Technology" (March 19): VUV light (λ = 172 nm) and EUV light (λ = 13.5 nm) which are directly decomposed by organic molecules can be oxidized by active oxygen to form carbon monoxide CO or carbon dioxide CO 2 (oxidation method), using atomic hydrogen The reaction is reduced to a methane hydrocarbon (CH X ) (reduction method).
使用碳製作多孔膜之第3優點是藉由應用原有之碳多孔膜之製造方法而容易製作具有設為目標之孔徑、膜厚之多孔膜。即,如「2.2本實施形態之護膜用膜之製造方法」中敍述般,使用發生溶膠-凝膠轉變之有機化合物之溶液製成薄膜,利用溶膠-凝膠法形成大量含有溶劑之水凝膠狀態,其後以結構不崩解之方式乾燥去除溶劑,藉此獲得作為大量含有氣泡之多孔體之氣凝膠膜。而且,可列舉:將氣凝膠膜最終碳化而獲得作為碳氣凝膠之碳多孔膜之方法;或製作使用於分子結構中利用化學反應過程或碳化過程將結構固定化並且產生氣泡之高分子原料(為有機化合物)之高分子溶液並製成薄膜後,使其進行化學反應或碳化反應,而獲得將於該過程中產生之氣泡或隙間作為細孔之碳多孔膜之方法;或組合該等方法之方法。 A third advantage of producing a porous film using carbon is that it is easy to produce a porous film having a target pore diameter and a film thickness by applying a conventional method for producing a carbon porous film. In other words, as described in "2.2 Method for Producing Film for Films of the Present Embodiment", a film formed by using a sol-gel-transformed organic compound is used to form a film, and a large amount of solvent-containing water is formed by a sol-gel method. In the state of the gel, the solvent is dried and removed in such a manner that the structure does not disintegrate, whereby an aerogel film which is a porous body containing a large amount of bubbles is obtained. Further, a method of finally carbonizing an aerogel film to obtain a carbon porous film as a carbon aerogel, or a polymer used for immobilizing a structure and generating bubbles by a chemical reaction process or a carbonization process in a molecular structure may be mentioned. a method in which a polymer solution of a raw material (which is an organic compound) is formed into a thin film, and then subjected to a chemical reaction or a carbonization reaction to obtain a carbon porous film which is a pore or a gap between the pores generated in the process; or a combination thereof Method of method.
薄膜化技術與蒸鍍法不同,利用使用高分子溶液之旋轉塗佈、模具塗佈、凹版塗佈之於非真空環境下之濕式塗敷法容易較薄地控制膜厚,或如矽晶圓之製作法般較薄地切削桿狀者並進行研磨加工將其薄膜化,藉此可進行生產性較高之製造。 The thinning technique differs from the vapor deposition method in that it is easy to control the film thickness thinly by a wet coating method using a spin coating, a die coating, or a gravure coating of a polymer solution in a non-vacuum environment, or as a wafer. In the production method, the rod shape is thinly cut and the polishing process is performed to thin the film, whereby the production with high productivity can be performed.
使用碳製作多孔膜之第4優點使熱特性與彎曲剛度優異。非晶質碳(a-C)、石墨(g-C)及Si之熔點、熱膨脹係數分別如下。即,關於常壓下之熔點,碳本身於全部元素中最高,a-C、g-C不存在熔點,Si為1414℃,因而碳之耐熱性優異。關於熱膨脹係數,a-C為3.0×10-6/K,g-C為3.2×10-6/K,Si為3.9×10-6/K,因而碳之熱尺寸穩定性優異。 The fourth advantage of using a carbon to form a porous film is excellent in thermal characteristics and bending rigidity. The melting points and thermal expansion coefficients of amorphous carbon (aC), graphite (gC), and Si are as follows. That is, with respect to the melting point under normal pressure, carbon itself is the highest among all elements, aC and gC do not have a melting point, and Si is 1414 ° C, and thus carbon is excellent in heat resistance. Regarding the coefficient of thermal expansion, aC is 3.0 × 10 -6 /K, gC is 3.2 × 10 -6 /K, and Si is 3.9 × 10 -6 /K, so that the thermal stability of carbon is excellent.
另一方面,關於膜之相當於硬度(物理強度)之彎曲剛度,由於碳與Si之泊鬆比均為0.2左右,因此與楊式模數與膜厚D之三次方之積成比例。a-C之楊式模數為30~33GPa,g-C之楊式模數為14GPa,與此相對地,Si之楊式模數為130~190GPa。本發明者認為,Si比碳優異,實際上於本實施形態中為碳多孔膜,可使膜厚D加厚為Si平膜之2.5倍~5倍以上,因此作為護膜用膜之本實施形態之碳多孔膜變大。 On the other hand, regarding the bending stiffness corresponding to the hardness (physical strength) of the film, since the Poisson's ratio of carbon to Si is about 0.2, it is proportional to the product of the Young's modulus and the film thickness D. The Yang-type modulus of a-C is 30~33GPa, and the Yang-type modulus of g-C is 14GPa. In contrast, the Yang-type modulus of Si is 130~190GPa. The inventors of the present invention thought that Si is superior to carbon, and in fact, in the present embodiment, it is a carbon porous film, and the film thickness D can be made thicker than 2.5 times to 5 times or more of the Si flat film. Therefore, the present invention is used as a film for a protective film. The carbon porous film of the form becomes large.
[技術要點3] [Technical Point 3]
技術要點3可使用制約滿足問題之碳多孔膜之結構參數加以規定。 Technical point 3 can be specified using structural parameters that limit the carbon porous membrane that satisfies the problem.
若碳多孔膜之結構參數在反映現實之碳膜之膜強度或製造上之經驗值之制約條件、及滿足關於T、△、D之基準值之特定範圍內,則可獲得可較佳地用於EUV光微影之護膜用膜。以下依序按照步驟進行說明。 If the structural parameters of the carbon porous film are within the specific range reflecting the film strength of the actual carbon film or the empirical value of the manufacturing, and satisfying the specific range of the reference values of T, Δ, and D, it can be preferably used. A film for protective film of EUV light lithography. The following steps are followed in the following steps.
[結構參數群與基準值(Ti、△i、Di、i=1~3)之關係] [Relationship between structural parameter group and reference value (Ti, △i, Di, i=1~3)]
(1)步驟1 (1) Step 1
於N=1層~5層之立方體壁群細孔模型及立方體軸群細孔模型中,製作使d、α發生各種變化之模型。使用根據非專利文獻1求出之碳(2.25g/cm3)之λ=13.5nm下之光學常數n、k(分別為9.61×10-1、7.70×10-3)、λ=6.75nm下之光學常數n、k(分別為9.91×10-1、7.70×10-4)、及RSoft公司製造之藉由RCWA法之繞射光學元件設計、解析軟體DiffractMOD,計算各模型之入射角θ=6°下之T、△、D。再者,T為0 次之透過率,又,△為自總透過率減去0次之透過率所得之值。 In the cubic wall group pore model and the cubic axis group pore model of N=1 layer to 5 layer, a model for making various changes in d and α is produced. The optical constants n and k at λ = 13.5 nm of carbon (2.25 g/cm 3 ) determined according to Non-Patent Document 1 (9.61 × 10 -1 , 7.70 × 10 -3 , respectively ) and λ = 6.75 nm were used. The optical constants n and k (9.91×10 -1 , 7.70×10 -4 , respectively ), and the diffraction optical element design and analysis software DiffractMOD manufactured by RSoft Corporation by RCWA method, and the incident angle θ of each model is calculated. T, △, D at 6°. Further, T is a transmittance of 0 times, and Δ is a value obtained by subtracting the transmittance of 0 times from the total transmittance.
再者,T、△、D之計算除使用上述DiffractMOD之方法以外,亦有使用上述G-Solver之方法。前者雖然因計算複雜且高難度而需要較長之計算時間,但可對應於立方體壁群細孔模型及立方體軸群細孔模型之任一者。另一方面,後者雖然計算相對單純計算時間亦快,但僅對應於立方體壁群細孔模型,又,計算結果是於通過1次時之透過率T為70~100%之範圍內T值最大增大10%左右,於散射量△為0~10%之範圍內△值最大減小5%左右。於本實施形態中,只要無特別說明,則優先使用可適用於任一細孔結構模型之前者作為計算法。 Further, in addition to the method of using the above DiffractMOD, the calculation of T, Δ, and D also uses the above-described G-Solver method. Although the former requires a long calculation time due to complicated calculation and high difficulty, it can correspond to any of the cubic wall group pore model and the cubic axis group pore model. On the other hand, although the latter calculation is relatively fast compared to the simple calculation time, it only corresponds to the cubic wall group pore model, and the calculation result is that the T value is the largest in the range of 70 to 100% of the transmittance T through one time. The increase is about 10%, and the Δ value is reduced by about 5% at the maximum in the range of 0 to 10% of the scattering amount Δ. In the present embodiment, unless otherwise specified, a calculation method that can be applied to any of the pore structure models is preferably used.
使用由Esumi股份有限公司市售之EXCEL多變量解析之軟體工具(多元回歸軟體)對所得之結果進行多元回歸分析,求出各細孔結構模型之第1結構參數群及第2結構參數群對碳多孔膜之T及△之影響。 Using the software tool (multiple regression software) of EXCEL multivariate analysis commercially available from Esumi Co., Ltd., the obtained results were subjected to multiple regression analysis to obtain the first structural parameter group and the second structural parameter group of each pore structure model. The influence of T and △ on the carbon porous film.
<步驟1-1> <Step 1-1>
立方體壁群細孔模型之由第1結構參數群N、d、α對T、△之影響 The influence of the first structural parameter group N, d, α on T and △ in the pore wall model of cubic wall group
立方體壁群細孔模型之藉由第1結構參數群N、d、α所得之多元回歸分析之結果是,λ=13.5nm下之T有關之多元回歸式成為T=[-7.65×10-3{α}-1.53×10-2{dN}+9.95×10-1]×100 (19) As a result of the multivariate regression analysis of the first structural parameter group N, d, and α of the cubic wall group pore model, the multivariate regression equation of T at λ = 13.5 nm becomes T = [-7.65 × 10 -3 {α}-1.53×10 -2 {dN}+9.95×10 -1 ]×100 (19)
自由度修正後之決定係數R*2=0.97,利用歸準淨偏回歸係數之絕對值之大小關係求出之各因子之依存率(設為各因子之歸準淨偏回歸係數之絕對值除以全部因子之歸準淨偏回歸係數之絕對值之和所得的百分率之值)α為28%,dN為72%。再者,於說明通過2次護膜用膜時之透過率需要大致將通過1次之情形時之值平方等方面而言,理論上關於T之多元回歸式較佳為可與In(T)=[-1.13×10-2{α}-2.04×10-2{dN}+2.93×10-2] (20) The coefficient of determination after the degree of freedom correction is R *2 =0.97, and the dependence of each factor obtained by the magnitude relationship of the absolute values of the corrected net partial regression coefficients is set as the absolute value of the net partial regression coefficient of each factor. The value of the percentage obtained by summing the absolute values of the net partial regression coefficients of all the factors) is 28%, and dN is 72%. In addition, in terms of the squareness of the case where the transmittance of the film for passing through the film for the second time is required to be approximately one time, it is preferable that the multiple regression formula of T is compatible with In(T). =[-1.13×10 -2 {α}-2.04×10 -2 {dN}+2.93×10 -2 ] (20)
R*2=0.95 R *2 =0.95
近似,但於以下之計算中使用R*2較大之式(19)。 Approximate, but the formula (19) with a larger R * 2 is used in the calculation below.
又,λ=13.5nm下之關於△之多元回歸式為△=[5.05×10-4{dNα}+3.66×10-3]×100 (21) Further, the multivariate regression equation for Δ at λ = 13.5 nm is Δ = [5.05 × 10 -4 {dNα} + 3.66 × 10 -3 ] × 100 (21)
R*2=0.92。 R *2 = 0.92.
另一方面,λ=6.75nm下之關於T之多元回歸式為T=[-1.98×10-3{α}-4.68×10-3{dN}+1.01]×100 (22) On the other hand, the multiple regression equation for T at λ = 6.75 nm is T = [-1.98 × 10 -3 {α} - 4.68 × 10 -3 {dN} + 1.01] × 100 (22)
R*2=0.91,各因子之依存率成為α為34%,dN為66%。再者,關於T之多元回歸式可與In(T)=[-2.16×10-3{α}-5.05×10-3{dN}+1.24×10-2] (23) R *2 = 0.91, and the dependency ratio of each factor was α of 34% and dN of 66%. Furthermore, the multiple regression equation for T can be related to In(T)=[-2.16×10 -3 {α}-5.05×10 -3 {dN}+1.24×10 -2 ] (23)
R*2=0.90 R *2 =0.90
近似,但於以下之計算中使用R*2較大之式(22)。 Approximate, but R > 2 is larger in the calculation below (22).
又,λ=6.75nm下之關於△之多元回歸式為△=[1.49×10-4{dNα}-1.47×10-4]×100 (24) Further, the multivariate regression equation for Δ at λ = 6.75 nm is Δ = [1.49 × 10 -4 {dNα} - 1.47 × 10 -4 ] × 100 (24)
R*2=0.94。 R *2 = 0.94.
根據該等結果可知,於立方體壁群細孔模型中,細孔之壁厚與細孔之積層數之積即構成Nd之膜之材料之膜厚方向上之實質厚度(相當於平膜之膜厚)對T造成較大影響,再無比與細孔之大小對應之α對前者之因子造成影響的。另一方面,可知就與αNd之積之形式之方面而言,α與Nd等程度地對△造成影響。α物理上與孔徑L(=λα)對應,意味著△容易受到孔徑之影響。 According to the results, in the cubic wall group pore model, the product of the wall thickness of the pores and the number of layers of the pores is the substantial thickness in the film thickness direction of the material constituting the film of Nd (corresponding to the film of the flat film) Thickness has a large influence on T, and it is inconspicuous that the α corresponding to the size of the pore affects the factor of the former. On the other hand, it is understood that α and Nd have an influence on Δ in terms of the form of the product of αNd. α corresponds physically to the aperture L (= λα), meaning that Δ is susceptible to the aperture.
<步驟1-2> <Step 1-2>
由立方體軸群細孔模型之第1結構參數群N、d、α造成之對T、△之影響 The influence of the first structural parameter group N, d, α of the cubic axis group pore model on T and △
根據藉由立方體軸群細孔模型中之第1結構參數群N、d、α之多元回歸分析之結果可知,λ=13.5nm下之關於T之多元回歸式成為T=[6.02×10-3{α}-8.69×10-3{dN1/2}+1.00]×100 (25) According to the results of multivariate regression analysis of the first structural parameter group N, d, and α in the cubic axis group pore model, the multivariate regression equation for T at λ = 13.5 nm becomes T = [6.02 × 10 -3 {α}-8.69×10 -3 {dN 1/2 }+1.00]×100 (25)
R*2=0.86 R *2 =0.86
各因子之依存率成為α為33%,dN1/2為67%。再者,關於T之多元回歸式亦可與In(T)=[6.86×10-3{α}-5.01×10-3{dN}-1.34×10-2] (26) The dependency ratio of each factor was α of 33% and dN 1/2 of 67%. Furthermore, the multiple regression equation for T can also be related to In(T)=[6.86×10 -3 {α}-5.01×10 -3 {dN}-1.34×10 -2 ] (26)
R*2=0.79 R *2 =0.79
近似,於以下之計算中使用R*2較大之式(25)。 For the approximation, the larger formula (25) of R * 2 is used in the calculation below.
又,λ=13.5nm下之關於△之多元回歸式成為△=[1.99×10-3{dN1/2}-1.25×10-2]×100 (27) Further, the multivariate regression equation with respect to Δ at λ = 13.5 nm becomes Δ = [1.99 × 10 -3 {dN 1/2 } - 1.25 × 10 -2 ] × 100 (27)
R*2=0.71。 R *2 = 0.71.
再者,關於△之多元回歸式係對需要通過2次護膜用膜時之散射率大致將通過1次之情形之值翻一倍等進行說明,並且理論上較佳為可均與△=[9.14×10-4{dN}-7.55×10-3]×100 (28) In addition, the multi-regression equation of Δ is described by doubling the value of the case where the scattering rate is required to pass through the film for the second time, and it is theoretically preferable to be both Δ= [9.14×10 -4 {dN}-7.55×10 -3 ]×100 (28)
R*2=0.66 R *2 =0.66
近似,於以下之計算中使用R*2較大之式(27)。 For the approximation, the larger formula (27) of R * 2 is used in the calculation below.
另一方面,λ=6.75nm下之關於T之多元回歸式成為T=[1.07×10-3{α}-2.95×10-3{dN1/2}+1.00]×100 (29) On the other hand, the multiple regression equation for T at λ = 6.75 nm becomes T = [1.07 × 10 -3 {α} - 2.95 × 10 -3 {dN 1/2 } + 1.00] × 100 (29)
R*2=0.91,各因子之依存率成為α為22%,dN1/2為78%。再者,關於T之多元回歸式均可與In(T)=[1.06×10-3{α}-1.51×10-3{dN}+2.84×10-4] (30) R *2 = 0.91, and the dependency ratio of each factor becomes α of 22% and dN 1/2 of 78%. Furthermore, the multiple regression equation for T can be compared with In(T)=[1.06×10 -3 {α}-1.51×10 -3 {dN}+2.84×10 -4 ] (30)
R*2=0.91 R *2 =0.91
近似,就與式(25)之整合性而言,於以下之計算中使用式(29)。 Approximation, in terms of the integration with the formula (25), the formula (29) is used in the calculation below.
又,關於λ=6.75nm下之△之多元回歸式成為△=[9.06×10-4{dN1/2}-5.50×10-3]×100 (31) Further, the multivariate regression equation for Δ at λ = 6.75 nm becomes Δ = [9.06 × 10 -4 {dN 1/2 } - 5.50 × 10 -3 ] × 100 (31)
R*2=0.63。 R *2 = 0.63.
再者,關於△之多元回歸式亦可與△=[4.34×10-4{dN}-3.85×10-3]×100 (32) Furthermore, the multiple regression equation for △ can also be combined with △ = [4.34 × 10 -4 {dN} - 3.85 × 10 -3 ] × 100 (32)
R*2=0.62 R *2 = 0.62
近似,但於以下之計算中使用R*2較大之式(31)。 Approximate, but the formula (31) where R * 2 is larger is used in the calculation below.
根據該等結果可知,於立方體軸群細孔模型中,本發明者所認為之與立方體壁群細孔模型之dN對應且相當於膜厚方向上之實質厚度之dN1/2之值對T造成較大影響,與細孔之大小對應之α沒有比前者之因子更造成影響。另一方面,關於△,於立方體軸群細孔模型中為連結而成之細孔,α僅具有形式上之意義,因此視為α=1,以dN1/2之形式造成影響,即意指無細孔之影響。 According to the results, it is understood that the value of dN 1/2 corresponding to the dN of the cubic wall group pore model and corresponding to the substantial thickness in the film thickness direction in the cubic axis group pore model is T A large effect is caused, and the α corresponding to the size of the pores has no influence more than the factor of the former. On the other hand, regarding Δ, in the pore model of the cubic axis group, the pores are connected, and α has only a formal meaning, so it is regarded as α=1, which affects in the form of dN 1/2 , that is, Refers to the effect of no pores.
<步驟1-3> <Step 1-3>
由立方體壁群細孔模型及立方體軸群細孔模型中之第2結構參數群ρ、D、α造成的對T、△之影響 The influence of the second structural parameter group ρ, D, α in the cubic wall group pore model and the cubic axis group pore model on T and △
繼而,調查由第2結構參數群ρ、D、α造成之對T、△之影響。根據立方體壁群細孔模型中之藉由第2結構參數群ρ、D、α之多元回歸分析之結果,λ=13.5nm下之關於T之多元回歸式成為T=[-1.26×10-3{Dρ(λα)1/2}-9.52×10-3{ρD}+9.60×10-1]×100(33) Then, the influence of the second structural parameter group ρ, D, and α on T and Δ is investigated. According to the results of multiple regression analysis of the second structural parameter group ρ, D, α in the pore wall model of the cubic wall group, the multiple regression equation for T at λ = 13.5 nm becomes T = [-1.26 × 10 -3 {Dρ(λα) 1/2 }-9.52×10 -3 {ρD}+9.60×10 -1 ]×100(33)
R*2=0.98,各因子之依存率成為Dρ(λα)1/2為60%,ρD為40%。又,λ=13.5nm下之關於△之多元回歸式成為△=[9.72×10-4{Dρ(λα)1/2}-3.75×10-3(ρD)+3.16×10-3]×100(34) R *2 = 0.98, and the dependency ratio of each factor becomes Dρ(λα) 1/2 of 60% and ρD is 40%. Further, the multivariate regression equation with respect to Δ at λ = 13.5 nm becomes Δ = [9.72 × 10 -4 {Dρ(λα) 1/2 } - 3.75 × 10 -3 (ρD) + 3.16 × 10 -3 ] × 100 (34)
R*2=0.93,各因子之依存率成為Dρ(λα)1/2為74%,ρD為26%。 R *2 = 0.93, and the dependency ratio of each factor becomes Dρ(λα) 1/2 of 74%, and ρD is 26%.
另一方面,λ=6.75nm下之關於T之多元回歸式成為T=[-6.62×10-4{Dρ(λα)1/2}-1.41×10-3(ρD)+9.96×10-1]×100 (35) On the other hand, the multiple regression equation for T at λ = 6.75 nm becomes T = [-6.62 × 10 -4 {Dρ(λα) 1/2 } - 1.41 × 10 -3 (ρD) + 9.96 × 10 -1 ]×100 (35)
R*2=0.99,各因子之依存率成為Dρ(λα)1/2為81%,ρD為19%。 R *2 = 0.99, and the dependency ratio of each factor becomes Dρ(λα) 1/2 of 81%, and ρD is 19%.
又,λ=6.75nm下之關於△之多元回歸式成為△=[4.49×10-4{Dρ(λα)1/2}-1.11×10-3{ρD}-1.84×10-3]×100(36) Further, the multivariate regression equation with respect to Δ at λ = 6.75 nm becomes Δ = [4.49 × 10 -4 {Dρ(λα) 1/2 } - 1.11 × 10 -3 {ρD} - 1.84 × 10 -3 ] × 100 (36)
R*2=0.95,各因子之依存率成為Dρ(λα)1/2為78%,ρD為22%。 R *2 = 0.95, and the dependency ratio of each factor becomes 78% of Dρ(λα) 1/2 , and ρD is 22%.
另一方面,立方體軸群細孔模型中之藉由第2結構參數群ρ、D、α所得之多元回歸分析之結果是,λ=13.5nm下之關於T之多元回歸式成為T=[-1.59×10-4{Dρ(λα)1/2}-1.59×10-3{ρD}+9.66×10-1]×100(37) On the other hand, the result of the multiple regression analysis obtained by the second structural parameter group ρ, D, α in the cubic axis group pore model is that the multiple regression equation for T at λ = 13.5 nm becomes T = [- 1.59×10 -4 {Dρ(λα) 1/2 }-1.59×10 -3 {ρD}+9.66×10 -1 ]×100(37)
R*2=0.99,各因子之依存率成為Dρ(λα)1/2為35%,ρD為65%。 R *2 = 0.99, and the dependency ratio of each factor becomes Dρ(λα) 1/2 of 35%, and ρD is 65%.
又,λ=13.5nm下之關於△之多元回歸式成為△=[1.59×10-4{Dρ(λα)1/2}-3.57×10-4(ρD)-2.41×10-3]×100(38) Further, the multivariate regression equation with respect to Δ at λ = 13.5 nm becomes Δ = [1.59 × 10 -4 {Dρ(λα) 1/2 } - 3.57 × 10 -4 (ρD) - 2.41 × 10 -3 ] × 100 (38)
R*2=0.91,各因子之依存率成為Dρ(λα)1/2為70%,ρD為30%。 R *2 = 0.91, and the dependency ratio of each factor becomes 70% of Dρ(λα) 1/2 and ρD is 30%.
另一方面,λ=6.75nm下之關於T之多元回歸式成為T=[-8.20×10-5{Dρ(λα)1/2}-3.27×10-4(ρD)+1.00]×100 (39) On the other hand, the multiple regression equation for T at λ = 6.75 nm becomes T = [-8.20 × 10 -5 {Dρ(λα) 1/2 } - 3.27 × 10 -4 (ρD) + 1.00] × 100 ( 39)
R*2=0.99,各因子之依存率成為Dρ(λα)1/2為54%,ρD為46%。 R *2 = 0.99, and the dependency ratio of each factor becomes Dρ(λα) 1/2 of 54%, and ρD is 46%.
又,λ=6.75nm下之關於△之多元回歸式成為△=[7.60×10-5{Dρ(λα)1/2}-1.66×10-4{ρD}-1.31×10-3]×100 (40) Further, the multivariate regression equation with respect to Δ at λ = 6.75 nm becomes Δ = [7.60 × 10 -5 {Dρ(λα) 1/2 } - 1.66 × 10 -4 {ρD} - 1.31 × 10 -3 ] × 100 (40)
R*2=0.93,各因子之依存率成為Dρ(λα)1/2為68%,ρD為32%。 R *2 = 0.93, and the dependency ratio of each factor becomes Dρ(λα) 1/2 of 68%, and ρD is 32%.
於該等結果中可知,就以T、△之說明變數{Dρ(λα)1/2}、{ρD}以共用因子之形式含有視密度ρ與膜厚D之積ρD的形式可獲得較大之R*2而言,ρD與T、△一併造成較大之影響。ρD相當於膜厚方向上之平均單位面積之膜重量,因此與膜厚方向之實質上之物質之量有關係,若ρ較大,則需要使D較薄,若ρ較小,則可增大D。 As can be seen from the results, it can be seen that the variable {Dρ(λα) 1/2 } and {ρD} in the form of the sharing factor and the product ρD of the apparent density ρ and the film thickness D in the form of the sharing factor can be obtained in a large form. For R *2 , ρD and T, △ together have a greater impact. ρD corresponds to the film weight of the average unit area in the film thickness direction, and therefore has a relationship with the amount of the substance substantially in the film thickness direction. If ρ is large, it is necessary to make D thinner, and if ρ is small, it can be increased. Big D.
(2)步驟2 (2) Step 2
根據步驟1所示之多元回歸式,可定性地得知各結構參數群對T、△之影響。於步驟1中於計算之便宜方面設為N≦5,而得知滿足各基準值(Ti、△i、Di;i=1~3)之第1結構參數群(N、d、α)及第2結構參數群(ρ、D、α)之值,因此推測各α、d下之滿足Ti及△i之各基準值之N之值、N(Ti)、N(△i),進而使用式(2)求出滿足T及△之各基準值之D的值D(Ti)、D(△i)。然而,關於△i,推測由於式(27)及式(31)之R*2略微較小,而與Ti相比誤差變大。因此,關於△i,將藉由定義所得之散射量之值之1/2設為各△i之上限值(例如,根據定義應將10%散射量設為△1,將5%散射量設為△1之上限)。其結果是通過2次護膜用膜時之散射量與△1、△2、△3對應分別成為10%、5%、1%。再者,N(Ti)、N(△i)及D(Ti)、D(△i)意指分別滿足T及△之各基準值之上限之積層數Nmax、上限之膜厚Dmax。 According to the multiple regression equation shown in step 1, the influence of each structural parameter group on T and Δ can be qualitatively known. In the first step, in the case of the calculation, it is N≦5, and it is known that the first structural parameter group (N, d, α) satisfying the respective reference values (Ti, Δi, Di; i = 1 to 3) and Since the values of the second structural parameter group (ρ, D, and α) are estimated, the values of N satisfying the respective reference values of Ti and Δi under each α and d, N(Ti), and N(Δi) are used. Equation (2) finds values D (Ti) and D (Δi) of D satisfying the respective reference values of T and Δ. However, regarding Δi, it is presumed that R * 2 of the formula (27) and the formula (31) is slightly smaller, and the error is larger than that of Ti. Therefore, with respect to Δi, 1/2 of the value of the scattered amount obtained by definition is set as the upper limit of each Δi (for example, by definition, the 10% scattering amount should be set to Δ1, and the 5% scattering amount should be Set to the upper limit of △1). As a result, the amount of scattering when passing through the film for the secondary film twice corresponds to Δ1, Δ2, and Δ3, and is 10%, 5%, and 1%, respectively. Further, N(Ti), N(Δi), D(Ti), and D(Δi) mean the number of layers N max and the film thickness D max of the upper limit which satisfy the upper limit of each of the reference values of T and Δ, respectively.
根據步驟2,以第1結構參數α、d為基礎可定量地得知滿足T及△之各基準值之上限之積層數Nmax,以第2結構參數α、ρ為基礎可定量地得知滿足T及△之各基準值之上限之膜厚Dmax即D之範圍。 According to the second step, the number of layers N max satisfying the upper limit of each of the reference values of T and Δ can be quantitatively known based on the first structural parameters α and d, and can be quantitatively known based on the second structural parameters α and ρ. The film thickness D max which is the upper limit of each of the reference values of T and Δ is the range of D.
其結果是,關於ρ,有ρ變得越小,滿足T及△之各基準值之上限之膜厚Dmax越增大之傾向(尤其是T成指數函數地增大)。另一方面, 關於α,Dmax之值相對於ρ之值較大地變動,因此不能說沒有比關於ρ之傾向明確的,有α相對於T變得越大Dmax越增大,α相對於△變得越大Dmax越減少之傾向。 As a result, the ρ becomes smaller, and the film thickness D max which satisfies the upper limit of each of the reference values of T and Δ tends to increase (in particular, T increases exponentially). On the other hand, since the value of α and D max fluctuates greatly with respect to the value of ρ, it cannot be said that there is no clearer than the tendency of ρ, and the larger the value of α with respect to T, the larger D max increases, and α The larger the Δ becomes, the more D max tends to decrease.
(3)步驟3 (3) Step 3
可根據步驟2求出用以滿足各基準值Ti、△i、Di(i=1~3)所需要之結構參數α、N、d、ρ、D之範圍。然而,於本實施形態中,除上述以外,製成使滿足作為現實中所得之碳多孔膜之制約條件1~制約條件4的結構參數α、N、d、ρ、D之範圍滿足本實施形態之課題之碳多孔膜。 According to step 2, the range of structural parameters α, N, d, ρ, and D required to satisfy the respective reference values Ti, Δi, and Di (i = 1 to 3) can be obtained. However, in the present embodiment, in addition to the above, the range of the structural parameters α, N, d, ρ, and D satisfying the constraint 1 to the constraint 4 of the carbon porous film obtained in reality is satisfied. The carbon porous membrane of the subject.
.制約條件1:0.335nm≦d (41) . Constraint 1: 0.335nm≦d (41)
.制約條件2:1≦N (42) . Constraint 2: 1≦N (42)
.制約條件3:0.5≦α (43) . Constraint 3: 0.5≦α (43)
.制約條件4:1.0×10-3g/cm3≦ρ≦2.25g/cm3(44) . Constraint condition 4: 1.0×10 -3 g/cm 3 ≦ρ≦2.25g/cm 3 (44)
制約條件1及制約條件2為關於於關於d及N之定義下所說明之微結構參數者,是計算之前提。再者,關於d,較佳為1.35nm以上。又,關於N,較佳為2以上,若數值較大,則可考慮於各細孔結構模型中具有不同微結構參數之立方體殼狀或立方體框狀之細孔於滿足各基準值之範圍內於膜厚方向上積層而成之膜結構。 The constraint 1 and the constraint 2 are those relating to the microstructure parameters described under the definitions of d and N, which are calculated before calculation. Further, regarding d, it is preferably 1.35 nm or more. Further, it is preferable that N is 2 or more, and if the numerical value is large, it is considered that pores having a cubic shell shape or a cubic frame shape having different microstructure parameters in each pore structure model satisfy the respective reference values. A film structure formed by laminating in the film thickness direction.
制約條件3為微觀及宏觀共用之結構參數,此處所言之α值表示與細孔分佈之L(peak)對應之值。根據本實施形態之意義而將其下限設為0.5。現實中所得之碳多孔膜含有較α值小之孔徑之細孔,且難以排除其等細孔。然而,孔徑較小之細孔對碳多孔膜之膜厚之提昇幾乎無貢獻,藉由其壁厚之積層而儘量降低透過率,因而不佳。因此,細孔分佈較佳為集中於L(peak)之尖銳形狀者。α之上限係根據步驟2而求出,根據經驗L(max)≒1.5×L(peak)~3×L(peak),認為若將與碳多孔膜中之平均孔徑對應之α的上限值[L(peak)/λ]設為根據步驟2所得之 α之上限之1/1.5~1/3,則現實中所得之碳多孔膜中之最大孔徑可抑制為根據步驟2所得之α之上限以下,因而較佳。 The constraint 3 is a structural parameter shared by the microscopic and macroscopic, and the alpha value referred to herein represents a value corresponding to L (peak) of the pore distribution. The lower limit is set to 0.5 in accordance with the meaning of the embodiment. The carbon porous film obtained in reality contains pores having a pore diameter smaller than the α value, and it is difficult to exclude the pores thereof. However, the pores having a small pore diameter contribute little to the increase in the film thickness of the carbon porous film, and the transmittance is minimized by the layer thickness of the carbon layer, which is not preferable. Therefore, the pore distribution is preferably one in which the sharp shape of L (peak) is concentrated. The upper limit of α is obtained from the step 2, and based on the empirical L(max) ≒ 1.5 × L (peak) ~ 3 × L (peak), it is considered that the upper limit of α corresponding to the average pore diameter in the carbon porous film is considered. [L(peak)/λ] is set according to step 2 When the upper limit of α is 1/1.5 to 1/3 of the upper limit of α, the maximum pore diameter in the carbon porous film obtained in practice can be suppressed to be less than or equal to the upper limit of α obtained in the second step, and thus it is preferable.
制約條件4為根據現實中獲得碳氣凝膠之視密度ρ之下限值進行規定者。P與αλ/d之倒數於立方體壁群細孔模型中與式(5)相關,於立方體軸群細孔模型中與式(8)相關。αλ/d為根據該項之構成而成為各個細孔自身之強度之指標者。具體而言,若其值較小(若ρ較大),則細孔自身成為牢固者。 The constraint condition 4 is defined by the lower limit value of the apparent density ρ of the carbon aerogel obtained in reality. The reciprocal of P and αλ/d is related to equation (5) in the cubic wall group pore model, and is related to equation (8) in the cubic axis group pore model. Λλ/d is an indicator of the strength of each pore itself according to the configuration of the item. Specifically, if the value is small (if ρ is large), the pore itself becomes a firm one.
以作為現實所得之碳多孔膜之制約條件1~制約條件4為基礎,根據步驟2,用以滿足各基準值Ti、△i、Di(i=1~3)所需要之結構參數D、ρ、α、d之範圍係按以下之方式而求出。 Based on the constraint conditions 1 to 4 of the carbon porous film obtained in reality, according to step 2, the structural parameters D and ρ required to satisfy the respective reference values Ti, Δi, and Di (i = 1 to 3) are used. The ranges of α and d are obtained in the following manner.
關於膜厚D之範圍,於立方體軸群細孔模型中,於λ=13.5nm下為D=100nm~23881nm(23μm),於λ=6.75nm下為D=100nm~63850nm(63μm)。於立方體壁群細孔模型中,於λ=13.5nm下為D=100nm~517nm,於λ=6.75nm下為D=100nm~1711nm,D之上限值係於各個細孔結構模型中於最小之ρ、最大之αλ/d下實現。 The range of the film thickness D is D = 100 nm to 23881 nm (23 μm) at λ = 13.5 nm and D = 100 nm to 63850 nm (63 μm) at λ = 6.75 nm in the cubic axis group pore model. In the cubic wall group pore model, D=100nm~517nm at λ=13.5nm, D=100nm~1711nm at λ=6.75nm, and the upper limit of D is the smallest in each pore structure model. ρ, the maximum αλ / d is achieved.
關於視密度ρ之範圍,於立方體軸群細孔模型中,於λ=13.5nm下為ρ=1.0×10-3~9.4×10-1g/cm3,於λ=6.75nm下為ρ=1.2×10-3~2.1g/cm3。於立方體壁群細孔模型中,於λ=13.5nm下為ρ=8.2×10-2~5.6×10-1g/cm3,於λ=6.75nm下為ρ=8.8×10-2~1.7g/cm3。另一方面,關於成為各個細孔自身之強度之指標之αλ/d之範圍,ρ之上限值與各個細孔結構模型及對應之λ下之最小之αλ/d對應,ρ之下限值與最大之αλ/d對應。即,若以與上述ρ之範圍對應之形式表記αλ/d之範圍,則於立方體軸群細孔模型中於λ=13.5nm下為αλ/d=81~1.25,於λ=6.75nm下為αλ/d=75~0.16。於立方體壁群細孔模型中,於λ=13.5nm下為αλ/d=81~10,於λ=6.75nm下為αλ/d=75~1.7。 Regarding the range of apparent density ρ, in the cubic axis group pore model, ρ = 1.0 × 10 -3 ~ 9.4 × 10 -1 g / cm 3 at λ = 13.5 nm, and ρ = at λ = 6.75 nm. 1.2 × 10 -3 ~ 2.1g / cm 3 . In the cubic wall group pore model, ρ = 8.2 × 10 -2 ~ 5.6 × 10 -1 g / cm 3 at λ = 13.5 nm, and ρ = 8.8 × 10 -2 ~ 1.7 at λ = 6.75 nm g/cm 3 . On the other hand, regarding the range of αλ/d which is an index of the strength of each pore itself, the upper limit of ρ corresponds to the smallest pore structure model and the corresponding αλ/d under the corresponding λ, and the lower limit of ρ Corresponds to the largest αλ/d. That is, when the range of αλ/d is expressed in a form corresponding to the range of ρ, it is αλ/d=81 to 1.25 at λ=13.5 nm in the cubic axis group pore model, and is λ=6.75 nm. Λλ/d=75~0.16. In the cubic wall group pore model, αλ/d=81~10 at λ=13.5 nm and αλ/d=75-1.7 at λ=6.75 nm.
關於細孔尺寸參數α之範圍,於立方體軸群細孔模型中,於λ= 13.5nm下為α=0.5~181,於λ=6.75nm下為α=0.5~726。於立方體壁群細孔模型中,於0.335nm≦d之基礎下,於λ=13.5nm下為α=0.5~20,於λ=6.75nm下為α=0.5~86。又,於1.35nm≦d之基礎下於λ=13.5nm下為α=0.5~18,於λ=6.75nm下為α=0.5~84。 Regarding the range of the pore size parameter α, in the cubic axis group pore model, at λ= α = 0.5 to 181 at 13.5 nm and α = 0.5 to 726 at λ = 6.75 nm. In the cubic wall group pore model, α = 0.5 to 20 at λ = 13.5 nm and α = 0.5 to 86 at λ = 6.75 nm on the basis of 0.335 nm ≦d. Further, α = 0.5 to 18 at λ = 13.5 nm and α = 0.5 to 84 at λ = 6.75 nm on the basis of 1.35 nm ≦d.
關於細孔之壁厚或柱粗d之範圍,於立方體軸群細孔模型中,於λ=13.5nm下為d=0.335nm~30.5nm,於λ=6.75nm下為d=0.335nm~60.6nm。於立方體壁群細孔模型中,於λ=13.5nm下為d=0.335nm~6.74nm,於λ=6.75nm下為α=0.335nm~32.2nm。 The range of the wall thickness of the pores or the thickness d of the column is d = 0.335 nm to 30.5 nm at λ = 13.5 nm and d = 0.335 nm to 60.6 at λ = 6.75 nm in the pore model of the cubic axis group. Nm. In the cubic wall group pore model, d = 0.335 nm to 6.74 nm at λ = 13.5 nm, and α = 0.335 nm to 32.2 nm at λ = 6.75 nm.
以下,表示於步驟3中作為護膜用膜較佳之特徵結構(其中,設為d≧1.35nm之情形)之例。再者,將結構參數群及制約條件之值之各範圍以{α、d[單位nm]、D[單位nm]、ρ[單位g/cm3]、αλ/d}之形式於各細孔結構模型、EUV光之每種波長下表記其結構之例。再者,{A1、B1、C11~C12、D1、E1}~{A2、B1、C21~C22、D2、E2}意指可於壁厚或柱粗d為該B1值之基礎下使細孔尺寸參數α為A1~A2之範圍與各個α對應且於膜厚D為C11~C22、C21~C22之範圍內求出本實施形態之基準值。 In the following, an example of a preferred structure of the film for a film (in the case of d≧1.35 nm) is shown in the step 3. Furthermore, each range of values of the structural parameter group and the constraint condition is in the form of {α, d [unit nm], D [unit nm], ρ [unit g/cm 3 ], αλ/d} in each of the pores. Structural Models, Examples of Structures for Each Wavelength of EUV Lights. Furthermore, {A1, B1, C11~C12, D1, E1}~{A2, B1, C21~C22, D2, E2} mean that the pores can be made on the basis of the wall thickness or the column thickness d being the B1 value. The dimension parameter α is a range in which the range of A1 to A2 corresponds to each α, and the reference value of the present embodiment is obtained within a range in which the film thickness D is C11 to C22 and C21 to C22.
<步驟3-1> <Step 3-1>
作為護膜用膜較理想之結構-T3.δ3.D3 As a membrane for film protection, the ideal structure - T3. Δ3. D3
特徵結構1為作為護膜用膜較理想之結構。為於立方體軸群細孔模型之λ=13.5nm下具有{α、d、D、ρ、αλ/d}={2、1.35、500~835、1.5×10-2、20}~{8、1.35、500~4659、1.0×10-3、80}、{3、2.01、500~677、1.5×10-2、20}~{10、2.01、500~2635、1.4×10-3、67}、{4、2.7、500~592、1.5×10-2、20}~{15、2.70、500~2188、1.6×10-3、75}、{6、3.35、500~587、1.0×10-2、24}~{20、3.35、500~1894、1.0×10-3、81}、{8、4.02、500~542、8.5×10-3、27}~{20、4.02、500~1320、 1.4×10-3、67}、{15、4.69、500~736、3.4×10-3、43}~{25、4.69、500~1212、1.3×10-3、72}、{15、5.40、500~559、4.5×10-3、38}~{30、5.40、500~1098、1.2×10-3、75} The characteristic structure 1 is a structure which is preferable as a film for a film. For the cubic axis group pore model, λ = 13.5 nm has {α, d, D, ρ, αλ / d} = { 2 , 1.35, 500 ~ 835, 1.5 × 10 -2 , 20} ~ {8, 1.35, 500~4659, 1.0×10 -3 , 80}, { 3 , 2.01, 500~677, 1.5×10 -2 , 20}~{10, 2.01, 500~2635, 1.4×10 -3 , 67} , {4, 2.7, 500~592, 1.5×10 -2 , 20}~{15, 2.70, 500~2188, 1.6×10 -3 , 75}, {6, 3.35, 500~587, 1.0×10 - 2 , 24}~{20, 3.35, 500~1894, 1.0×10 -3 , 81}, {8, 4.02, 500~542, 8.5×10 -3 , 27}~{20, 4.02, 500~1320, 1.4×10 -3 , 67}, {15, 4.69, 500~736, 3.4×10 -3 , 43}~{25, 4.69, 500~1212, 1.3×10 -3 , 72}, {15, 5.40, 500~559, 4.5×10 -3 , 38}~{30, 5.40, 500~1098, 1.2×10 -3 , 75}
之結構參數的碳多孔膜。 A carbon porous membrane with structural parameters.
就可獲得T=T3、△=△3、D=D3之物性值而言,具有該等結構參數之碳多孔膜為作為護膜用膜而最合適之結構。尤其是具有 {2、1.35、500~835、1.5×10-2、20}、{3、2.01、500~677、1.5×10-2、20}、{4、2.7、500~592、1.5×10-2、20}、{6、3.35、500~587、1.0×10-2、24}之結構參數之碳多孔膜之ρ≧1.0×10-2g/cm3,就膜強度之觀點而言更佳。 In the case where the physical properties of T = T3, Δ = Δ3, and D = D3 are obtained, the carbon porous film having the structural parameters is the most suitable structure as the film for the protective film. Especially with { 2 , 1.35, 500~835, 1.5×10 -2 , 20}, {3, 2.01, 500~677, 1.5×10 -2 , 20}, {4, 2.7, 500~592, 1.5× 10 -2 , 20}, {6, 3.35, 500-587, 1.0 × 10 -2 , 24} The structural parameters of the carbon porous film are ρ ≧ 1.0 × 10 -2 g / cm 3 , depending on the film strength Better words.
於立方體壁群細孔模型中,不存在於λ=13.5nm及6.75nm下具有獲得T=T3、△=△3、D=D3之物性值之結構參數之碳多孔膜。 In the cubic wall group pore model, there is no carbon porous film having structural parameters of obtaining physical properties of T=T3, Δ=Δ3, and D=D3 at λ=13.5 nm and 6.75 nm.
<步驟3-2> <Step 3-2>
立方體壁群細孔模型中之透過率優先之結構-T2.δ2.D1 Transmission priority structure in the cubic wall group pore model - T2. Δ2. D1
關於特徵結構2,於立方體壁群細孔模型之λ=13.5nm下,作為高透過率優先之結構,存在具有獲得T=T2、△=△2、D=D1之物性值之結構參數之碳多孔膜。即,為具有{α、d、D、ρ、αλ/d}={2、1.35、100~119、3.1×10-1、20}~{8、1.35、111~210、8.2×10-2、80}、{3、2.01、100~110、3.0×10-1、20}~{8、2.01、112~143、1.2×10-1、54}、{6、2.70、100~114、2.1×10-1、30} Regarding the characteristic structure 2, in the cubic layer group pore model λ = 13.5 nm, as a structure having a high transmittance priority, there is a carbon having a structural parameter which obtains physical properties of T = T2, Δ = Δ2, and D = D1. Porous membrane. That is, it has {α, d, D, ρ, αλ/d}={2, 1.35, 100~119, 3.1×10 -1 , 20}~{8, 1.35, 111~210, 8.2×10 -2 , 80}, {3, 2.01, 100~110, 3.0×10 -1 , 20}~{8, 2.01, 112~143, 1.2×10 -1 , 54}, {6, 2.70, 100~114, 2.1 ×10 -1 , 30}
之結構參數之碳多孔膜,ρ≧1.0×10-2g/cm3,就膜強度之觀點而言較佳。 The carbon porous film having the structural parameters, ρ ≧ 1.0 × 10 -2 g / cm 3 , is preferable from the viewpoint of film strength.
<步驟3-3> <Step 3-3>
膜厚優先之結構-T1.△1.D3 Film thickness priority structure - T1. △1. D3
作為特徵結構3,存在膜厚優先之結構即具有獲得T=T1、△= △1、D=D3之物性值之結構參數之碳多孔膜。為於立方體軸群細孔模型之λ=13.5nm下具有{α、d、D、ρ、αλ/d}={0.5、1.35、1588~1636、1.7×10-1、5}~{8、1.35、21402~35650、1.0×10-3、80}、{0.5、2.01、776~799、3.0×10-1、3.4}~{10、2.01、12388~22508、1.4×10-3、67}、{1、2.70、796~850、1.7×10-1、5}~{15、2.70、14350~24047、1.2×10-3、75}、{1、3.35、540~578、2.3、4}~{20、3.35、16523~24140、1.0×10-3、81}、{2、4.02、690~789、1.0×10-1、67}~{20、4.02、11504~16806、1.4×10-3、67}、{2、4.69、520~594、1.3×10-1、5.8}~{25、4.69、13551~15420、1.3×10-3、72}、{3、5.40、568~694、8.6×10-2、7.5}~{25、5.40、10245~11658、1.7×10-3、63}、{6、8.1、500~726、5.2×10-2、10}~{25、8.1、4595~5228、3.7×10-3、42}、{8、10.8、500~618、5.2×10-2、10}~{25、10.8、2612~2970、6.4×10-3、31}、{10、13.5、500~554、5.2×10-2、10}~{25、13.5、1691~1922、9.7×10-3、25}、{15、16.2、500~728、3.5×10-2、13}~{25、16.2、1191~1352、1.4×10-2、21}、{20、21.6、500~641、3.5×10-2、12.5}~{25、21.6、693~784、2.3×10-2、15.6} As the characteristic structure 3, there is a carbon porous film having a structure in which the film thickness is preferred, that is, a structural parameter having physical properties of T = T1, Δ = Δ1, and D = D3. For the cubic axis group pore model, λ = 13.5 nm has {α, d, D, ρ, αλ / d} = {0.5, 1.35, 1588 ~ 1636, 1.7 × 10 -1 , 5} ~ {8, 1.35, 21402~35650, 1.0×10 -3 , 80}, {0.5, 2.01, 776~799, 3.0×10 -1 , 3.4}~{10, 2.01, 12388~22508, 1.4×10 -3 , 67} , { 1 , 2.70, 796~850, 1.7×10 -1 , 5}~{15, 2.70, 14350~24047, 1.2×10 -3 , 75}, {1, 3.35, 540~578, 2.3, 4} ~{20, 3.35, 16523~24140, 1.0×10 -3 , 81}, {2, 4.02, 690~789, 1.0×10 -1 , 67}~{20, 4.02, 11504~16806, 1.4×10 - 3 , 67}, { 2 , 4.69, 520~594, 1.3×10 -1 , 5.8}~{25, 4.69, 13551~15420, 1.3×10 -3 , 72}, { 3 , 5.40, 568~694, 8.6×10 -2 , 7.5}~{25, 5.40, 10245~11658, 1.7×10 -3 , 63}, {6, 8.1, 500~726, 5.2×10 -2 , 10}~{25, 8.1, 4595~5228, 3.7×10 -3 , 42}, {8, 10.8, 500~618, 5.2×10 -2 , 10}~{25, 10.8, 2612~2970, 6.4×10 -3 , 31}, { 10, 13.5, 500~554, 5.2×10 -2 , 10}~{25, 13.5, 1691~1922, 9.7×10 -3 , 25}, {15, 16.2, 500~728, 3.5×10 -2 , 13}~{25, 16.2, 1191~ 1352, 1.4×10 -2 , 21}, {20, 21.6, 500~641, 3.5×10 -2 , 12.5}~{25, 21.6, 693~784, 2.3×10 -2 , 15.6}
之結構參數之碳多孔膜。 A carbon porous membrane having structural parameters.
尤其是具有{α、d、D、ρ、αλ/d}={0.5、1.35、1588~1636、1.7×10-1、5}~{2、1.35、5550~6359、1.5×10-2、20}、{0.5、2.01、776~799、3.0×10-1、3.4}~{2、2.01、2564~2937、3.1×10-2、13}、{1、2.70、796~850、1.7×10-1、5}~{4、2.70、2778~3632、1.9×10-2、20}、{1、3.35、540~578、2.3、4}~{6、3.35、2685~3976、1.0×10-2、24}、{2、4.02、690~789、1.0×10-1、67}~{6、4.02、1881~2784、1.5×10-3、20}、{2、4.69、520~594、1.3×10-1、5.8}~{8、4.69、 1833~3049、1.1×10-2、23}、{3、5.40、568~694、8.6×10-2、7.5}~{8、5.40、1393~2316、1.5×10-2、20}、{6、8.1、500~726、5.2×10-2、10}~{10、8.1、806~1456、2.1×10-2、8.1}、{8、10.8、500~618、5.2×10-2、10}~{15、10.8、944~1573、1.7×10-2、19}、{10、13.5、500~554、5.2×10-2、10}~{20、13.5、1069~1555、1.5×10-2、20}、{15、16.2、500~728、3.5×10-2、13}~{25、16.2、1191~1352、1.4×10-2、21}、{20、21.6、500~641、3.5×10-2、12.5}~{25、21.6、693~784、2.3×10-2、15.6} In particular, it has {α, d, D, ρ, αλ/d}={0.5, 1.35, 1588~1636, 1.7×10 -1 , 5}~{ 2 , 1.35, 5550~6359, 1.5×10 -2 , 20}, {0.5, 2.01, 776~799, 3.0×10 -1 , 3.4}~{ 2 , 2.01, 2564~2937, 3.1×10 -2 , 13}, {1, 2.70, 796~850, 1.7× 10 -1 , 5}~{4, 2.70, 2778~3632, 1.9×10 -2 , 20}, {1, 3.35, 540~578, 2.3, 4}~{6, 3.35, 2685~3976, 1.0× 10 -2 , 24}, { 2 , 4.02, 690~789, 1.0 × 10 -1 , 67}~{6, 4.02, 1881~2784, 1.5×10 -3 , 20}, {2, 4.69, 520~ 594, 1.3×10 -1 , 5.8}~{8, 4.69, 1833~3049, 1.1×10 -2 , 23}, {3, 5.40, 568~694, 8.6×10 -2 , 7.5}~{8, 5.40, 1393~2316, 1.5×10 -2 , 20}, {6, 8.1, 500~726, 5.2×10 -2 , 10}~{10, 8.1, 806~1456, 2.1×10 -2 , 8.1} , {8, 10.8, 500~618, 5.2×10 -2 , 10}~{15, 10.8, 944~1573, 1.7×10 -2 , 19}, {10, 13.5, 500~554, 5.2×10 - 2 , 10}~{20, 13.5, 1069~1555, 1.5×10 -2 , 20}, {15, 16.2, 500~728, 3.5×10 -2 , 13}~{25, 16.2, 1191~1352 1.4×10 -2 , 21}, {20, 21.6, 500~641, 3.5×10 - 2 , 12.5}~{25, 21.6, 693~784, 2.3×10 -2 , 15.6}
之結構參數之碳多孔膜之ρ≧1.0×10-2g/cm3,就膜強度觀點而言更佳。 The carbon porous film having the structural parameters has a pH of 1.0 × 10 -2 g / cm 3 , which is more preferable from the viewpoint of film strength.
於立方體壁群細孔模型之λ=13.5nm下為具有{α、d、D、ρ、αλ/d}={8、1.35、500~517、8.2×10-2、80} It has {α, d, D, ρ, αλ/d}={8, 1.35, 500~517, 8.2×10 -2 , 80} at λ=13.5 nm of the cubic wall group pore model.
之結構參數之碳多孔膜。 A carbon porous membrane having structural parameters.
上述使用結構參數群及制約條件之值之各範圍表示作為護膜用膜較佳之特徵結構之例,亦可使用數式表示EUV光通過1次碳多孔膜時之透過率T成為84%以上、散射量△成為10%以下、膜厚D成為100nm以上之EUV用護膜用膜。例如若使用上述G-Solver進行計算,則於將EUV光之波長λ設為13.5nm,將石墨之密度W設為2.25g/cm3,將碳多孔體膜之視密度(g/cm3)設為ρ,且將膜厚設為D(nm)時,可使用第一結構參數於立方體壁群細孔模型中將碳多孔體膜設為較佳為滿足以下之各式(1)~(5)之結構參數之範圍之EUV用護膜用膜。 Each of the ranges of the values of the structural parameter groups and the control conditions described above is an example of a preferred structure of the film for a film, and the transmittance T of the EUV light passing through the primary carbon porous film may be 84% or more. A film for a protective film for EUV having a scattering amount Δ of 10% or less and a film thickness D of 100 nm or more. For example, when the calculation is performed using the above G-Solver, the wavelength λ of the EUV light is set to 13.5 nm, the density W of the graphite is set to 2.25 g/cm 3 , and the apparent density (g/cm 3 ) of the carbon porous film is set. When ρ is set and the film thickness is D (nm), the carbon porous film can be preferably used in the cubic wall group pore model using the first structural parameter to satisfy the following formulas (1) to (1). 5) A film for a protective film for EUV in the range of structural parameters.
α≦30(α:細孔尺寸參數) (1) ≦30 (α: pore size parameter) (1)
0.335≦Nd≦13(N:於膜厚方向上之細孔數(個)、d:細孔之壁厚(nm)) (2) 0.335≦Nd≦13 (N: number of pores in the film thickness direction (number), d: wall thickness of pores (nm)) (2)
αλ/d≦81(λ:曝光波長(nm)) (3) Λλ/d≦81 (λ: exposure wavelength (nm)) (3)
其中,上述N、d為 N=-1+{(W-ρ)1/3/W1/3}+{D(W-ρ)1/3/αλW1/3} (4) Where N and d are N=-1+{(W-ρ) 1/3 /W 1/3 }+{D(W-ρ) 1/3 /αλW 1/3 } (4)
d=-αλ+{αλW1/3/(W-ρ)1/3} (5) d=-αλ+{αλW 1/3 /(W-ρ) 1/3 } (5)
同樣地,可使用第二結構參數於立方體壁群細孔模型中將碳多孔體膜較佳地設為滿足以下之各式(6)~(9)之結構參數之範圍之EUV用護膜用膜。 In the same manner, the carbon porous film can be preferably used as the EUV film for satisfying the structural parameters of the following formulas (6) to (9) in the cubic wall group pore model using the second structural parameter. membrane.
α≦30(α:細孔尺寸參數) (6) ≦ 30 (α: pore size parameter) (6)
αλ/d≦81(λ:曝光波長(nm)) (7) Λλ/d≦81 (λ: exposure wavelength (nm)) (7)
0.08g/cm3≦ρ≦0.7g/cm3 (8) 0.08g/cm 3 ≦ρ≦0.7g/cm 3 (8)
D:100nm≦D≦850nm (9) D: 100 nm ≦D ≦ 850 nm (9)
如此,以適當之計算方法為基礎與曝光波長λ、近似之細孔結構模型對應地即便使用數式亦可表示作為EUV用護膜用膜較佳之特徵結構。 In this way, it is preferable to use a numerical formula in accordance with the exposure wavelength λ and the approximate pore structure model in accordance with an appropriate calculation method, and it is preferable to use the film for the EUV film.
以上,根據[技術要點1]及[技術要點2]可知,本實施形態係一種護膜用膜,該護膜用膜之特徵在於:由碳多孔體膜構成,且根據[技術要點3]可知護膜用膜之膜厚D為100nm~63μm。 As described above, the present invention is a film for a protective film which is composed of a carbon porous film and is known from [Technical Point 3], according to [Technical Point 1] and [Technical Point 2]. The film thickness D of the film for a film is 100 nm - 63 micrometer.
再者,作為本實施形態之碳多孔膜之進一步改善方案[補充處理],亦可列舉組合公知之技術者。 Further, as a further improvement of the carbon porous film of the present embodiment [supplemental treatment], a combination of well-known techniques may be mentioned.
第1例係如專利文獻2記載般為了防止由來自EUV之高輸出光源之光造成之碳多孔膜之氧化、還原,而於滿足本發明之課題之目標值之範圍內利用公知之濺鍍法、真空蒸鍍法等方法於本實施形態之碳多孔膜之表面之單面或兩面被覆數nm之Si、SiC、SiO2、Si3N4、釔Y、鉬Mo、Ru、銠Rh等。就EUV光之消光係數較低,折射率接近1.0,與碳反應而於碳膜表面形成強度優異之數nm之SiC膜之方面而言,尤佳為Si。 In the first example, as described in Patent Document 2, in order to prevent oxidation and reduction of the carbon porous film by light from a high-output light source of EUV, a known sputtering method is used within a range that satisfies the target value of the problem of the present invention. In a method such as a vacuum deposition method, Si, SiC, SiO 2 , Si 3 N 4 , yttrium, molybdenum Mo, Ru, yt Rh or the like of several nm is coated on one surface or both surfaces of the surface of the carbon porous film of the present embodiment. In the case of a SiC film having a low extinction coefficient of EUV light and a refractive index close to 1.0 and reacting with carbon to form a strength of several nm on the surface of the carbon film, Si is particularly preferable.
關於第2例,本實施形態之碳多孔膜具有對EUV光高透過性與實用上具有充分之耐久性之膜厚,但於需要進一步之膜強度之情形時, 於滿足本發明之課題之目標值之範圍內如專利文獻3、專利文獻4、專利文獻5、非專利文獻2般將篩網作為支持膜(就消光係數及△n較小,容易以通用品之形式獲取之觀點而言,材料較佳為Si、Zr、Mo、鈦Ti、鎳Ni、鋁Al、銅Cu等及該等之碳化物)進行接合加強。於該情形時,透過率根據支持膜(篩網之厚度為數十μm、構成篩網之線徑為數十μm、孔部之大小為數百μm~數mm的膜)而下降10%以上,因此使用本發明之碳多孔膜單獨之透過率T為T2、T3者。再者,支持膜幾乎不對散射量△造成影響。 In the second example, the carbon porous film of the present embodiment has a film thickness that is highly transparent to EUV light and has sufficient durability in practical use. However, when further film strength is required, In the range of the target value of the problem of the present invention, the screen is used as a support film in the case of Patent Document 3, Patent Document 4, Patent Document 5, and Non-Patent Document 2 (the extinction coefficient and Δn are small, and it is easy to use general-purpose products). From the viewpoint of the form acquisition, the material is preferably Si, Zr, Mo, Titanium Ti, NiNi, Al, Cu, Cu, etc. and the like. In this case, the transmittance is reduced by 10% or more depending on the thickness of the support film (the thickness of the screen is several tens μm, the wire diameter of the sieve is several tens μm, and the size of the hole is several hundred μm to several mm). Therefore, the carbon porous film of the present invention alone has a transmittance T of T2 and T3. Further, the support film hardly affects the amount of scattering Δ.
[補記]係對結構參數之修正法進行敍述。[技術要點3]中之式(19)~式(40)、式(1)~式(5)、式(6)~式(9)中表示之本實施形態之透過率T、散射量△與碳多孔膜之結構參數群之關係式、或使用用以獲得T、△、D之基準值之結構參數群的制約範圍係以(前提1)及(前提2)為基礎使用EUV光之波長λ=13.5及λ=6.75nm時之密度W=2.25g/cm3之石墨之光學常數n、k之值計算透過率T及散射量△而算出者。因此,於改變石墨之密度W之前提值之情形時,只要使用對應之新光學常數以與步驟1~步驟3相同之方式再計算T及△,再算出本實施形態之碳多孔膜之結構參數之制約範圍或Ti、△i、Di即可。例如,若石墨之密度W之前提值變小,則碳之消光係數k變低,折射率n接近1,因此結構參數之厚度D、視密度ρ、細孔尺寸參數α之本實施形態之制限之範圍擴大。 [Replenishment] describes the method of correcting structural parameters. [Technical Point 3] The transmittance T and the scattering amount Δ of the present embodiment expressed by the formulas (19) to (40), (1) to (5), and (6) to (9). The relationship between the structural parameter group of the carbon porous membrane or the structural parameter group used to obtain the reference values of T, Δ, and D is based on the (premise 1) and (premise 2) wavelengths of the EUV light. The values of the optical constants n and k of the graphite at a density of W = 2.25 g/cm 3 at λ = 13.5 and λ = 6.75 nm were calculated by calculating the transmittance T and the scattering amount Δ. Therefore, when the value of the graphite is changed before the density W of the graphite is changed, the structural parameters of the carbon porous film of the present embodiment are calculated by recalculating T and Δ in the same manner as in the steps 1 to 3 by using the corresponding new optical constant. The constraint range or Ti, △i, Di can be. For example, if the value of the graphite before the density W becomes smaller, the extinction coefficient k of the carbon becomes lower, and the refractive index n is close to 1, so the thickness D of the structural parameter, the apparent density ρ, and the pore size parameter α are limited by the embodiment. The scope has expanded.
2-2.本實施形態之護膜用膜之製造方法 2-2. Method for Producing Film for Protective Film of the Present Embodiment
以下介紹本實施形態之護膜用膜之製造方法,但作為本實施形態之護膜用膜之碳多孔膜並不限定於該製造方法及其實施例。圖5為表示護膜用膜之製造方法之圖。 In the following, the method for producing a film for a protective film of the present embodiment is described. However, the carbon porous film as the film for a protective film of the present embodiment is not limited to the production method and the examples thereof. Fig. 5 is a view showing a method of producing a film for a protective film.
獲得碳多孔膜之方法有以下各種方法。第1方法為如下方法:於不會於燒結、碳化時發生熔融、破壞之設為目標之細孔尺寸之等倍~ 數十倍左右之微細之碳前驅物粒子或碳粒子中添加黏合劑並進行混合、成膜後,進行燒結、碳化,藉此獲得將粒子之間隙作為細孔之碳多孔膜。 There are various methods for obtaining a carbon porous film. The first method is a method in which the melting and the destruction are not caused by sintering or carbonization, and the size of the pores of the target is twice as large. After adding a binder to the fine carbon precursor particles or carbon particles of about several tens of times, the film is formed into a film, and then sintered and carbonized to obtain a carbon porous film having pores as pores.
第2方法(方法A)係如下方法:藉由溶膠-凝膠法使用首先發生溶膠-凝膠轉變之原料,形成含有大量溶劑之溶劑合凝膠(例如水凝膠)之膜,繼而以該溶劑合凝膠之結構不崩解之方式僅將溶劑乾燥去除,藉此獲得含有大量氣泡之氣凝膠膜,最終將該氣凝膠膜碳化,藉此獲得作為碳氣凝膠之碳多孔膜。 The second method (method A) is a method of forming a film of a solvogel (for example, a hydrogel) containing a large amount of a solvent by a sol-gel method using a raw material in which a sol-gel transition first occurs, and then The structure of the solvogel does not disintegrate only by drying the solvent, thereby obtaining an aerogel film containing a large amount of bubbles, and finally carbonizing the aerogel film, thereby obtaining a carbon porous film as a carbon aerogel. .
第3方法(方法B)係如下方法:使用於分子結構中於化學反應過程或碳化過程中結構固定化並且產生氣泡之原料,進行化學反應或碳化反應,而獲得將該等過程中產生之氣泡或隙間作為細孔之碳多孔膜。根據第1方法控制粒徑而製造具有EUV光之波長之0.5倍~10倍左右之孔徑的碳多孔膜與其他方法相比相對容易,但難以獲得視密度1.0g/cm3以下之低密度之碳多孔膜。本實施形態之碳多孔膜可藉由第2及第3方法而獲得。 The third method (method B) is a method in which a chemical reaction or a carbonization reaction is carried out in a molecular structure in which a structure is immobilized and a bubble is generated in a chemical reaction process or a carbonization process, and bubbles generated in the processes are obtained. Or a carbon porous membrane as a pore. It is relatively easy to produce a carbon porous film having a pore diameter of about 0.5 to 10 times the wavelength of EUV light by controlling the particle diameter according to the first method, but it is difficult to obtain a low density of an apparent density of 1.0 g/cm 3 or less. Carbon porous membrane. The carbon porous film of the present embodiment can be obtained by the second and third methods.
本實施形態之碳多孔膜如[技術要點2]之第2優點中提及般應用現有之碳多孔膜之製造技術。然而,該等製造技術為於[技術要點4]、[技術要點5]兩方面不同者。 The carbon porous film of the present embodiment is a technique for producing a conventional carbon porous film as mentioned in the second advantage of [Technical Point 2]. However, these manufacturing techniques are different in [Technical Point 4] and [Technical Point 5].
[技術要點4] [Technical Point 4]
技術要點4為導入薄膜之成膜技術。關於技術要點4,由於是完全未考慮本實施形態之碳多孔膜之用途作為現有之碳多孔膜之用途的護膜用膜,而追加用以獲得薄膜之成膜技術。即,下述本實施形態之碳多孔膜之製造方法中之適於薄膜化的成膜步驟(步驟A2、步驟B2、步驟AB2)及用以獲得薄膜之塗敷液之調製步驟(步驟A1、步驟B1、步驟AB1)成為重要之技術要點。 Technical point 4 is a film forming technique for introducing a film. In the technical point 4, the film for a film for use as a conventional carbon porous film is not considered in consideration of the use of the carbon porous film of the present embodiment, and a film forming technique for obtaining a film is additionally added. In other words, in the method for producing a carbon porous film of the present embodiment, a film forming step (step A2, step B2, step AB2) suitable for film formation and a preparation step for obtaining a coating liquid for the film (step A1) Step B1 and step AB1) become important technical points.
於調製步驟中,較佳為:調整塗敷液之組成、分子量、溫度, 降低塗敷液之黏度,且可將薄膜塗敷為成膜、乾燥後之膜厚為數十nm~數百μm。原因在於在結構固定、乾燥步驟(步驟A3、步驟B3、步驟AB3)或碳化步驟(步驟A4、步驟B4、步驟AB4)中膜厚成為塗敷時之約0.5倍~3倍,碳化後之膜厚成為100nm~63μm。為了降低塗敷液之黏度,只要於技術要點5中敍述之製造參數之範圍內降低塗敷液中之最終成為碳質之溶質之濃度即可。尤其是於塗敷液為高分子溶液之情形時,較佳為將分子量降低至具有於乾燥後將塗膜自塗敷時之基材剝離時塗膜不破損之強度左右程度。 In the modulating step, it is preferred to adjust the composition, molecular weight, and temperature of the coating liquid. The viscosity of the coating liquid is lowered, and the film can be coated to form a film, and the film thickness after drying is several tens nm to several hundreds μm. The reason is that in the structure fixing, drying step (step A3, step B3, step AB3) or carbonization step (step A4, step B4, step AB4), the film thickness is about 0.5 to 3 times that of the coating, and the carbonized film The thickness becomes 100 nm to 63 μm. In order to lower the viscosity of the coating liquid, it is only necessary to reduce the concentration of the final carbonaceous solute in the coating liquid within the range of the manufacturing parameters described in the technical point 5. In particular, when the coating liquid is a polymer solution, it is preferred to lower the molecular weight to such an extent that the coating film does not break when the coating film is peeled off from the coating after drying.
又,作為用以獲得薄膜之塗敷方法,較佳為使用可較薄地塗敷低黏度之塗敷液之濕式塗敷法而不是蒸鍍法所代表之乾式塗佈法。具體而言,可使用如旋轉塗佈法、噴嘴掃描塗佈法、噴墨塗佈法等般生產性較低但對薄膜化有利之塗敷法;或棒式塗佈、凹版塗佈、模具塗佈、刮刀塗佈、吻合式塗佈等薄膜化有極限但藉由被稱作卷對卷之連續塗敷而生產性較高的塗敷法。進而,藉由不僅適當調整塗敷液黏度、組成或塗敷方法而且調整塗敷速度或塗敷溫度、塗敷時間等塗敷條件,可獲得均勻之薄膜。 Further, as a coating method for obtaining a film, it is preferred to use a wet coating method in which a low viscosity coating liquid can be applied thinly, instead of a dry coating method represented by a vapor deposition method. Specifically, a coating method which is less productive but advantageous for thin film formation such as a spin coating method, a nozzle scanning coating method, an inkjet coating method, or the like; or a bar coating, a gravure coating, a mold can be used. Thin film formation such as coating, blade coating, and conformal coating has a limit, but a coating method which is highly productive by continuous coating called roll-to-roll. Further, a uniform film can be obtained by appropriately adjusting not only the viscosity of the coating liquid, the composition or the coating method but also the coating conditions such as the coating speed, the coating temperature, and the coating time.
[技術要點5] [Technical Point 5]
技術要點5係為了獲得具有[技術要點3]中敍述之結構參數之碳多孔膜而根據各製造方法調整製造參數(成為碳質之溶質之種類與其分子量、溶液組成、溶液濃度、交聯觸媒種類、去鹵素種類與其濃度、乾燥條件、碳化條件等),以下對其詳情進行敍述。 Technical Point 5 In order to obtain a carbon porous film having the structural parameters described in [Technical Point 3], the production parameters are adjusted according to each production method (the type of solute which becomes carbonaceous and its molecular weight, solution composition, solution concentration, cross-linking catalyst) The type, dehalogen species and its concentration, drying conditions, carbonization conditions, etc.), the details of which will be described below.
2-2-1.碳氣凝膠系碳多孔膜之製造方法 2-2-1. Method for producing carbon aerogel-based carbon porous membrane
獲得本實施形態之碳多孔膜之方法A(上述之第2方法)應用參考文獻A、美國專利US4873218號公報[以下設為參考文獻B]、田門肇、表面、38(1)、1-9(2000)[以下設為參考文獻C]、日本專利特表平8-508535公報[以下設為參考文獻D]及R.Saliger等、J.Non-Crystalline Solids、221、144-150(1997)[以下設為參考文獻E]所介紹之方法。於該等文獻中,作為隔熱材料、電池或電容器等所使用之具有中孔之碳材料而被介紹,完全未考慮本實施形態之用途。然而,藉由追加薄膜之成膜技術並以可獲得膜厚較薄之水凝膠膜之方式調整製造參數,可應用於本實施形態之用途。 The method A (the second method described above) for obtaining the carbon porous film of the present embodiment is disclosed in the reference A, the US Pat. No. 4,873,218 (hereinafter referred to as Reference B), the field door, the surface, 38 (1), 1 9 (2000) [hereinafter referred to as reference C], Japanese Patent Laid-Open Publication No. Hei 8-508535 [hereinafter referred to as Reference D], and R. Saliger et al., J. Non-Crystalline The method described in Solids, 221, 144-150 (1997) [hereinafter referred to as Reference E]. In these documents, carbon materials having mesopores used for heat insulating materials, batteries, capacitors, and the like have been described, and the use of the present embodiment has not been considered at all. However, the application parameters of the present embodiment can be applied by adding a film forming technique of a film and adjusting the manufacturing parameters so that a hydrogel film having a small film thickness can be obtained.
即,如圖5所示,步驟A1將作為碳質原料之包含間苯二酚(R)、苯酚、鄰苯二酚、間苯三酚及其他多羥基苯化合物中之任一種以上之單體、與甲醛(F)、糠醛中之任一種以上之單體溶解於水中,又,將凝膠化(聚合)之作為鹼性觸媒(Ca)之碳酸鉀(K2CO3)、碳酸鈉(Na2CO3)、碳酸氫鉀(KHCO3)、碳酸氫鈉(NaHCO3)等鹼金屬碳酸鹽、鹼金屬碳酸氫鹽中之任一種以上溶解於水(Wa)中,將該等混合而調製塗敷液A(RF黏稠液)。 That is, as shown in FIG. 5, the step A1 is a monomer containing at least one of resorcin (R), phenol, catechol, phloroglucinol and other polyhydroxybenzene compounds as a carbonaceous raw material. And a monomer in which at least one of formaldehyde (F) and furfural is dissolved in water, and further, gelled (polymerized) potassium carbonate (K 2 CO 3 ) as a basic catalyst (Ca), sodium carbonate Any one or more of an alkali metal carbonate such as (Na 2 CO 3 ), potassium hydrogencarbonate (KHCO 3 ), or sodium hydrogencarbonate (NaHCO 3 ) or an alkali metal hydrogencarbonate is dissolved in water (Wa), and these are mixed. The coating liquid A (RF viscous liquid) was prepared.
步驟A2係繼步驟A1之後將該塗敷液A以自後面容易剝離之方式且以碳化後之膜厚成為100~850nm之方式塗敷(上述棒式塗佈或旋轉塗佈等)並成膜於脫模薄膜或脫模基板上。此時,較佳為以包圍脫模薄膜或脫模基板之周圍並且進行密閉而塗膜不自脫模薄膜或脫模基板之周圍流出之方式、且以溶劑(水)蒸發而塗敷液之組成不發生變化或成為膜細孔之區域不變形之方式進行密封。 Step A2 is followed by the step A1, and the coating liquid A is applied so as to be easily peeled off from the back, and the film thickness after carbonization is 100 to 850 nm (the above-mentioned bar coating or spin coating, etc.) and film formation. On the release film or release substrate. In this case, it is preferable to coat the periphery of the release film or the release substrate and to seal the coating film so as not to flow out from the release film or the periphery of the release substrate, and to evaporate the solvent (water) to apply the liquid. The composition is sealed in such a manner that the composition does not change or the region where the pores of the membrane are not deformed.
步驟A3係繼步驟A2之後於室溫(20℃)~100℃下階段性地提高溫度或靜置數天(1~14天),使其充分凝膠化(聚合)而獲得薄膜狀之水凝膠膜。為了較早地獲得固形之水凝膠膜,如參考文獻D所示可於靜置時進行加熱(50~100℃),但為了獲得具有大孔徑之水凝膠膜,較佳為加熱溫度較低。 Step A3 is followed by step A2 at room temperature (20 ° C) to 100 ° C to increase the temperature stepwise or to stand for several days (1 to 14 days), so that it is fully gelled (polymerized) to obtain film-like water. Gel film. In order to obtain a solid hydrogel film earlier, it can be heated (50 to 100 ° C) while standing as shown in Reference D, but in order to obtain a hydrogel film having a large pore diameter, it is preferred to heat the film. low.
繼而,將水凝膠膜自脫模薄膜或脫模基板剝離,為了以可進一步保持孔徑、細孔形狀之方式進行乾燥,而利用丙酮或環己烷等置換水凝膠膜中之溶劑(水)而進行二氧化碳超臨界乾燥(CO2超臨界乾 燥)[乾燥法1]、或進行凍結乾燥(若需要則於利用第三丁醇等置換後)[乾燥法2]、或於室溫~100℃下進行熱風乾燥或減壓乾燥(熱風、減壓乾燥)(若需要則於利用乾燥法1或乾燥法2中所使用之處理液進行置換後)[乾燥法3]使水凝膠膜中之水飛散而獲得多孔性之RF系氣凝膠膜。於置換時,為了藉由與置換液之接觸而抑制孔徑、細孔形狀之變化,較佳為緩慢地提高水凝膠膜中之自水至丙酮、環己烷、第三丁醇等之置換濃度或增加置換次數。 Then, the hydrogel film is peeled off from the release film or the release substrate, and the solvent in the hydrogel film is replaced with acetone or cyclohexane in order to dry the pore shape and the pore shape. And performing supercritical CO2 drying (CO 2 supercritical drying) [drying method 1] or freeze-drying (after replacement with a third butanol or the like if necessary) [drying method 2], or at room temperature to 100 Drying at a temperature of °C or drying under reduced pressure (hot air, drying under reduced pressure) (if necessary, after replacement with the treatment liquid used in the drying method 1 or the drying method 2) [drying method 3] in the hydrogel film The water is scattered to obtain a porous RF-based aerogel film. At the time of replacement, in order to suppress the change in the pore diameter and the pore shape by contact with the replacement liquid, it is preferred to gradually increase the replacement of water, acetone, cyclohexane, and third butanol from the water in the hydrogel film. Concentration or increase the number of substitutions.
又,作為乾燥方法,為了儘可能地抑制由乾燥時之溶劑之界面張力引起之毛管收縮,最佳為[乾燥法1]。然而,代替超臨界乾燥,參考文獻C所示之[乾燥法2]、參考文獻D、參考文獻E所示之[乾燥法3]亦多少犧牲孔徑、細孔形狀(進行收縮)但對於較低地抑制製造成本有優越性,而可用於本實施形態。 Moreover, as a drying method, in order to suppress the capillary shrinkage by the interfacial tension of the solvent at the time of drying as much as possible, it is preferable [drying method 1]. However, instead of supercritical drying, [Drying Method 2], Reference D, and Reference E shown in Reference C, [Drying Method 3] also sacrifices the pore size and pore shape (for shrinkage) but for lower It is advantageous in suppressing the manufacturing cost, and can be used in the present embodiment.
步驟A4係繼步驟A3之後將RF系氣凝膠膜於惰性氛圍下或氮氣氛圍下且於600~3000℃下進行10分鐘~20小時碳化處理,而獲得本實施形態之作為RF系碳氣凝膠之碳多孔膜。碳化處理可使用固形薄膜、片材之碳化、活化處理所使用之固定床方式、移動床方式、隧道窯等之碳化、活化製造方式而不是將碳前驅物粉碎。 Step A4 is followed by step A3, carbonizing the RF aerogel film in an inert atmosphere or under a nitrogen atmosphere at 600 to 3000 ° C for 10 minutes to 20 hours, thereby obtaining carbon gas condensation as an RF system of the present embodiment. A carbon porous film of glue. The carbonization treatment can be carried out by using a solid film, carbonization of a sheet, a fixed bed method for activation treatment, a moving bed method, a carbonization of a tunnel kiln or the like, and an activation production method instead of pulverizing a carbon precursor.
伴隨碳化而有如下傾向:RF系氣凝膠之孔徑發生收縮,碳化溫度變得越高收縮之比率越下降但孔徑、細孔分佈變得越小。因此,可根據設為目標之孔徑而調整碳化溫度。通常碳化溫度係於700~1500℃下進行,於進而需要提高膜強度、導電性、導熱性之情形時,可於2000~3000℃下進行處理。又,亦可藉由視需要對所得之碳多孔膜進行活化處理,擴大孔徑及細孔分佈而調整細孔結構。作為活化方法,較佳為使用利用水蒸氣、氯化氫、一氧化碳、二氧化碳、氧氣等活化氣體進行煅燒之氣體活化法。 There is a tendency that the pore diameter of the RF-based aerogel shrinks with carbonization, and the ratio of shrinkage decreases as the carbonization temperature becomes higher, but the pore diameter and pore distribution become smaller. Therefore, the carbonization temperature can be adjusted according to the aperture set as the target. Usually, the carbonization temperature is carried out at 700 to 1500 ° C, and when it is necessary to increase the film strength, electrical conductivity, and thermal conductivity, the treatment can be carried out at 2000 to 3000 ° C. Further, the pore structure and the pore distribution may be enlarged by adjusting the obtained carbon porous film as needed to adjust the pore structure. As the activation method, a gas activation method in which calcination is carried out using an activation gas such as steam, hydrogen chloride, carbon monoxide, carbon dioxide or oxygen is preferred.
再者,於碳化處理時,氣凝膠膜若嚴重收縮而於不拉伸狀態下 進行碳化,則膜容易產生皺褶,因此較佳為:利用框進行固定,或夾於2片石墨板或石墨片材間等使氣凝膠膜於拉伸狀態下進行碳化,而於空氣中或碘(I2)蒸氣下且於150℃~250℃事先進行結構之熱穩定化。 Further, in the carbonization treatment, if the aerogel film is severely shrunk and carbonized in a non-stretched state, the film is likely to wrinkle. Therefore, it is preferably fixed by a frame or sandwiched between two graphite sheets or The aerogel film is carbonized in a stretched state between the graphite sheets, and the structure is thermally stabilized in the air or under iodine (I 2 ) vapor at 150 ° C to 250 ° C in advance.
參考文獻C中之圖1及R.W.Pekala、F-M.Kong、Polym.、Prep、30、221-223(1989)[以下設為參考文獻F]中之圖2中記載RF系氣凝膠之形成機制之示意圖、RF系氣凝膠及作為其碳化物之RF系碳氣凝膠之電子顯微鏡照片。 The formation mechanism of the RF aerogel described in Figure 1 of Reference C and RWPekala, FM. Kong, Polym., Prep, 30, 221-223 (1989) [hereinafter referred to as Reference F] Schematic diagram, electron micrograph of RF aerogel and RF carbon aerogel as its carbide.
念珠狀之微粒子之集合體形成作為RF系碳氣凝膠之碳多孔膜。可知雖然認為現實之碳多孔膜具有立方體軸群細孔結構模型與立方體壁群細孔結構模型之中間結構,但硬要說的話RF系碳氣凝膠之細孔結構為類似立方體軸群細孔結構模型之結構。 The aggregate of the beaded microparticles forms a carbon porous membrane as an RF-based carbon aerogel. It can be seen that although the actual carbon porous membrane has an intermediate structure of a cubic axial group pore structure model and a cubic wall group pore structure model, it is hard to say that the pore structure of the RF system carbon aerogel is similar to a cubic shaft group pore. The structure of the structural model.
又,參考文獻A中之圖10~圖13中記載有RF系碳氣凝膠之細孔分佈之曲線圖與SAXS之Debye-Porod解析之曲線圖。根據該文獻之圖10可知,觸媒種類對RF系碳氣凝膠之細孔分佈之相依性可獲得鹼金屬碳酸氫鹽較鹼金屬碳酸鹽大之波峰細孔半徑r(peak)、孔徑L,根據該文獻之圖12可知,關於R/C之相依性,若R/C變大則孔徑L變大,但細孔分佈變寬,細孔分佈曲線之波峰之峰高度亦變低。 Further, in Figs. 10 to 13 of Reference A, a graph of a pore distribution of an RF-based carbon aerogel and a graph of Debye-Porod analysis of SAXS are shown. According to Fig. 10 of the literature, the dependence of the type of catalyst on the pore distribution of the RF carbon aerogel can be obtained by the peak of the alkali metal hydrogencarbonate larger than the alkali metal carbonate, the radius r (peak), the pore diameter L. As can be seen from Fig. 12 of this document, when the R/C becomes larger, the pore diameter L becomes larger as the R/C becomes larger, but the pore distribution becomes wider, and the peak height of the peak of the pore distribution curve also becomes lower.
又,根據該文獻之圖13可知,若R/C為數100(例如200)以下,則Debye-Porod圖之直線之斜率接近-4,因此細孔形狀與觸媒種類無關係而接近球狀。 Further, according to Fig. 13 of the document, when the R/C is 100 or less (for example, 200) or less, the slope of the straight line of the Debye-Porod diagram is close to -4, so that the pore shape is close to a spherical shape irrespective of the type of the catalyst.
以下根據參考文獻A、參考文獻B、參考文獻C所記載之代表性實驗值,求出假定為下述情況時之組成比與所得之結構參數之多元回歸式、式(36)、式(37):作為步驟A1而於成為碳質之原料中調製R、F,以Ca之形式調製Na2CO3而調製各種組成比之塗敷液A,作為步驟A2而利用旋轉塗佈將塗敷液A製成薄膜而獲得水凝膠膜後,作為步驟A3 而使水凝膠膜於室溫~100℃下凝膠化(聚合),進行CO2超臨界乾燥或凍結乾燥或熱風乾燥而獲得氣凝膠膜後,作為步驟A4而於1000℃下對氣凝膠膜進行碳化處理,最終獲得本實施形態之碳多孔膜。外觀密度成為 ρ=-1.27×10-1×ln(R/Ca)+7.07×(R/Wa)+7.24×10-1 (45) Hereinafter, based on the representative experimental values described in Reference A, Reference B, and Reference C, a multivariate regression equation, Equation (36), and Formula (37) which are assumed to be a composition ratio when the following conditions are obtained and the obtained structural parameters are obtained. In the step A1, R and F are prepared in a carbonaceous material, and Na 2 CO 3 is prepared in the form of Ca to prepare a coating liquid A having various composition ratios, and the coating liquid is applied by spin coating as step A2. After A is formed into a film to obtain a hydrogel film, as a step A3, the hydrogel film is gelated (polymerized) at room temperature to 100 ° C, and subjected to CO 2 supercritical drying or freeze drying or hot air drying to obtain gas. After the gel film, the aerogel film was carbonized at 1000 ° C as step A4, and finally the carbon porous film of the present embodiment was obtained. The apparent density becomes ρ=-1.27×10 -1 ×ln(R/Ca)+7.07×(R/Wa)+7.24×10 -1 (45)
R*2=0.92,各因子之依存率成為ln(R/Ca)為36%,R/Wa為64%。 R *2 = 0.92, and the dependency ratio of each factor becomes ln(R/Ca) of 36%, and R/Wa is 64%.
又,細孔半徑r成為ln(r)=2.41×10-1×ln(R/Ca)-5.23×10-1×ln(R/Wa)+5.36×10-1×ln(R/F)-9.69×10-1 (46) Further, the pore radius r becomes ln(r) = 2.41 × 10 -1 × ln(R/Ca) - 5.23 × 10 -1 × ln(R/Wa) + 5.36 × 10 -1 × ln(R/F) -9.69×10 -1 (46)
R*2=0.79,各因子之依存率成為ln(R/Ca)為39%,ln(R/Wa)為37%,ln(R/F)為25%。再者,與細孔半徑r對應之α可藉由依據式(18)將r翻一倍並除以λ而獲得。 R *2 =0.79, the dependency ratio of each factor was ln(R/Ca) of 39%, ln(R/Wa) was 37%, and ln(R/F) was 25%. Further, α corresponding to the pore radius r can be obtained by doubling r and dividing by λ according to the formula (18).
根據式(45)及式(46)可知以下情況。伴隨R與Ca之莫耳比R/Ca增大而視密度ρ變小,與細孔半徑r對應之α變大。又,根據上述引用文獻4,關於Ca之種類之影響,若以K2CO3≒Na2CO3<NaHCO3<KHCO3之順序α變大,R/Ca變小,則細孔分佈變尖銳,若0<R/Ca≦200,則可獲得球狀之細孔,若R/Ca>800,則可獲得圓盤狀之細孔。因此,為了獲得為球狀之較大之細孔且尖銳之細孔分佈,較佳為使用鹼金屬碳酸氫鹽且儘可能地減小R/Ca。 The following cases are known from the formulas (45) and (46). As the molar ratio R/Ca of R and Ca increases, the apparent density ρ becomes smaller, and α corresponding to the pore radius r becomes larger. Further, according to the above-mentioned cited document 4, when the influence of the type of Ca is increased in the order of K 2 CO 3 ≒Na 2 CO 3 <NaHCO 3 <KHCO 3 and the R/Ca becomes small, the pore distribution becomes sharp. If 0 < R / Ca ≦ 200, spherical pores can be obtained, and if R / Ca > 800, disc-shaped pores can be obtained. Therefore, in order to obtain a spherical fine pore and a sharp pore distribution, it is preferred to use an alkali metal hydrogencarbonate and to reduce R/Ca as much as possible.
另一方面,伴隨R與Wa之莫耳比R/Wa增大而ρ變大,α變小。又,伴隨R與F之莫耳比R/F增大而α變大。因此,為了獲得較大之細孔,較佳為儘可能地減小R/Wa且儘可能地增大R/F。 On the other hand, as the molar ratio R/Wa of R and Wa increases, ρ becomes larger, and α becomes smaller. Further, as the molar ratio R/F of R and F increases, α increases. Therefore, in order to obtain larger pores, it is preferable to reduce R/Wa as much as possible and to increase R/F as much as possible.
進而,於近似第2結構參數群與T、△之多元回歸式即立方體壁群細孔模型之情形時,若為λ=13.5nm則使用式(33)、式(34),若為λ= 6.75nm則使用式(35)、式(36),於近似立方體軸群細孔模型之情形時,若為λ=13.5nm則使用式(37)、式(38),若為λ=6.75nm則使用式(39)、式(40),藉此可得知滿足本實施形態之課題之Ti、△i、Di之組成範圍。 Further, in the case of approximating the second structural parameter group and the multi-regressive equation of T and Δ, that is, the cubic wall group pore model, if λ = 13.5 nm, the equations (33) and (34) are used, and if λ = At 6.75 nm, the equations (35) and (36) are used. In the case of the approximate cubic axis group pore model, if λ = 13.5 nm, the equations (37) and (38) are used, and if λ = 6.75 nm Then, using the formulas (39) and (40), the composition range of Ti, Δi, and Di satisfying the problem of the present embodiment can be known.
以上述方式藉由溶膠-凝膠法使用首先進行溶膠-凝膠轉變之原料形成大量含有溶劑之溶劑合凝膠(例如水凝膠)之膜,繼而以該溶劑合之結構不崩解之方式僅將溶劑乾燥去除,藉此獲得大量含有氣泡之氣凝膠膜,最終將該氣凝膠膜碳化,藉此可獲得作為碳氣凝膠之本實施形態之碳多孔膜。 By using a sol-gel method in the above manner, a film of a solvent-containing gel (for example, a hydrogel) containing a large amount of a solvent is formed by using a material which is first subjected to sol-gel conversion, and then the solvent is not disintegrated in a structure. Only the solvent is dried and removed, whereby a large amount of aerogel film containing bubbles is obtained, and finally the aerogel film is carbonized, whereby the carbon porous film of this embodiment as a carbon aerogel can be obtained.
2-2-2.鹵化乙烯樹脂系或偏二鹵乙烯樹脂系碳多孔膜之製造法 2-2-2. Method for producing a halogenated vinyl resin or a vinylidene halide resin-based carbon porous film
獲得本實施形態之碳多孔膜之方法B(上述第3方法)應用本發明者之專利4871319號公報[以下設為參考文獻G]、山下順也、鹽谷正俊、碳、No204、182-191(2002)[設為參考文獻H]所介紹之方法。該等參考文獻G或參考文獻H係以關於觸媒擔載材料、氣體吸藏材料、氣體分離材料、電極材料等所使用之具有中孔之碳材料之製造法者之形式進行介紹,而完全未考慮於本實施形態中之應用。然而,藉由追加薄膜之成膜技術並以可獲得膜厚較薄之鹵化乙烯樹脂膜或偏二鹵乙烯樹脂膜之方式調整製造參數,可應用於本實施形態之用途。 The method B (the third method) of the present invention is disclosed in Japanese Patent Application No. 4,871,319 (hereinafter referred to as Reference G), Yamashita Shunya, Shioya Masahiro, Carbon, No. 204, 182-191. (2002) [set as reference H]. These references G or reference H are described in the form of a manufacturer of a mesoporous carbon material used for a catalyst supporting material, a gas absorbing material, a gas separating material, an electrode material, etc., and completely The application in this embodiment is not considered. However, it is applicable to the use of the present embodiment by adjusting the manufacturing parameters by adding a thin film forming technique and obtaining a halogenated vinyl resin film or a vinylidene halide resin film having a small film thickness.
即,如圖5所示,作為步驟B1,碳質原料使用鹵化乙烯組成60莫耳%以上之鹵化乙烯樹脂或鹵化乙烯共聚物之樹脂(總稱為鹵化乙烯樹脂)中之鹵素之重量比為60wt%以上之高鹵化乙烯樹脂、或偏二鹵乙烯組成60莫耳%以上之偏二鹵乙烯或偏二鹵乙烯共聚物之樹脂(總稱為偏二鹵乙烯樹脂)(以下同等地處理高鹵化乙烯基樹脂與偏二鹵乙烯樹脂,若無特別說明,則簡稱為偏二鹵乙烯樹脂)。調製將該等樹脂溶解於良溶劑中所得之溶液或偏二鹵乙烯樹脂之微粒子分散至水中所得之乳膠,將該等溶液及乳膠總稱為塗敷液B。 That is, as shown in FIG. 5, as the step B1, the weight ratio of the halogen in the carbonaceous raw material using a halogenated ethylene resin having a halogenated ethylene composition of 60 mol% or more or a halogenated ethylene copolymer (collectively referred to as a halogenated vinyl resin) is 60 wt. More than or equal to high-halogenated ethylene resin or vinylidene halide composed of more than 60% by mole of a vinylidene halide or a vinylidene halide copolymer (collectively referred to as a vinylidene halide resin) (the following treatment of high halogenated ethylene equivalently) The base resin and the vinylidene halide resin are simply referred to as vinylidene halide resins unless otherwise specified. The solution obtained by dissolving the resin in a good solvent or the fine particles of the vinylidene halide resin dispersed in water is prepared, and the solutions and the latex are collectively referred to as a coating liquid B.
步驟B2係繼步驟B1之後將該塗敷液B以碳化後之膜厚成為100nm~63μm之方式塗敷、成膜於脫模薄膜或脫模基板上,於室溫~溶劑之沸點以下之溫度下進行熱風、減壓乾燥將溶劑或水飛散而獲得薄膜狀之偏二鹵乙烯樹脂之樹脂膜(偏二鹵乙烯樹脂膜)。 Step B2 is applied to the release film or the release substrate by the carbonization of the coating liquid B after the step B1, and the film thickness is from 100 nm to 63 μm, and the temperature is below the boiling point of the solvent at room temperature to solvent. The solvent or water was scattered by hot air under reduced pressure to obtain a resin film (vinylidene halide resin film) of a film-shaped vinylidene halide resin.
步驟B3係繼步驟B2之後使用下述溶液於室溫~混合溶液之沸點以下之溫度下對偏二鹵乙烯樹脂膜進行1秒~2週脫鹵化氫反應處理,而獲得偏二鹵乙烯樹脂系碳前驅物膜,該溶液係使用鹼金屬氫氧化物[氫氧化鉀(KOH)、氫氧化鈉(NaOH)等]之脫鹵化氫劑(鹼)之水溶液及/或胺溶液[氨水(NH3水)、1,8-二氮雜雙環[5、4、0]-7-十一烯(DBU)等]之脫鹵化氫劑(鹼)之溶液;四氫呋喃(THF)、二甲基甲醯胺(DMF)等將偏二鹵乙烯樹脂一部分或全部溶解之良溶劑;及水、醇及/或醚等偏二鹵乙烯樹脂之不良溶劑之混合溶液。再者,存在混合溶液根據組成而進行相分離之情形。本實施形態中使用之混合溶液為不進行相分離之組成者,為再現性良好地引起碳前驅物之脫鹵化氫反應所必須者。 Step B3 is followed by step B2, using the following solution to carry out dehydrohalogenation reaction treatment on the vinylidene halide resin film at a temperature below the boiling point of the room temperature to the mixed solution for 1 second to 2 weeks, thereby obtaining a vinylidene halide resin system. a carbon precursor film which is an aqueous solution of an alkali metal hydroxide [potassium hydroxide (KOH), sodium hydroxide (NaOH), etc.) and/or an amine solution [ammonia (NH 3 ) a solution of dehydrohalogenating agent (alkali) of 1,8-diazabicyclo[5,4,0]-7-undecene (DBU), etc.; tetrahydrofuran (THF), dimethylformamidine A good solvent such as a good solvent for dissolving a part or all of a vinylidene halide resin such as an amine (DMF); and a mixed solution of a poor solvent of a vinylidene halide resin such as water, an alcohol and/or an ether. Further, there is a case where the mixed solution is phase-separated depending on the composition. The mixed solution used in the present embodiment is a component which does not undergo phase separation, and is required for the dehydrohalogenation reaction of the carbon precursor to be excellent in reproducibility.
於步驟B2及步驟B3中,步驟A2及步驟A3不同,亦可將塗敷膜直接浸漬於混合溶液中而脫模薄膜或脫模基板上之塗敷膜之凝膠化不需要時間或不進行使塗敷膜熱風乾燥後專門進行剝離之操作。藉由與混合溶液之接觸而發生由塗敷膜之脫鹵素氫化引起之交聯(結構之固定化),同時偏二鹵乙烯樹脂膜因所產生之脫鹵化氫氣體而自脫模薄膜或脫模基板自然地剝離。因此,與方法A相比可於極短時間內獲得偏二鹵乙烯樹脂膜。 In step B2 and step B3, in step A2 and step A3, the coating film may be directly immersed in the mixed solution, and the gelation of the coating film on the release film or the release substrate may or may not be carried out. The coating film is specifically subjected to a peeling operation after being dried by hot air. Crosslinking (structure immobilization) caused by dehalogenation and hydrogenation of the coating film occurs by contact with the mixed solution, and the vinylidene halide resin film is released from the release film or the dehalogenated hydrogen gas generated The mold substrate is naturally peeled off. Therefore, a vinylidene halide resin film can be obtained in a very short time as compared with the method A.
進而,於步驟B3之塗敷膜之脫鹵素氫化中,於偏二鹵乙烯樹脂膜中產生因被稱作多烯結構(意指具有-C=C-或C≡C-之分子骨架結構)之交聯結構與脫鹵化氫產生之氣泡,而成為該氣泡多數殘留於膜中之偏二鹵乙烯樹脂系碳前驅物膜。該碳前驅物膜因多數之交聯結構即便於其後之步驟B4中亦可進而進行脫鹵化氫反應與碳化(非晶質碳化、 石墨化)而不熔融。 Further, in the dehalogenation hydrogenation of the coating film of the step B3, a polyene structure (meaning a molecular skeleton structure having -C=C- or C≡C-) is generated in the vinylidene halide resin film. The crosslinked structure and the bubbles generated by the dehydrohalogenation become a vinylidene halide resin-based carbon precursor film in which many of the bubbles remain in the film. The carbon precursor film can undergo dehydrohalogenation reaction and carbonization (amorphous carbonization, even in the subsequent step B4) due to a majority of the crosslinked structure. Graphitized) without melting.
步驟B4係如下方法:繼步驟B3之後以與步驟A4相同之方式於惰性氛圍下或氮氣氛圍下且於600~3000℃下於拉伸狀態下對偏二鹵乙烯樹脂系碳前驅物膜進行10分鐘~20小時加熱碳化,而獲得本實施形態之偏二鹵乙烯樹脂系碳多孔膜。 Step B4 is the following method: after step B3, the vinylidene halide resin-based carbon precursor film is subjected to stretching under an inert atmosphere or a nitrogen atmosphere at 600 to 3000 ° C in the same manner as in step A4. The carbonized carbonization was carried out in a minute to 20 hours to obtain a vinylidene halide resin-based carbon porous film of the present embodiment.
作為藉由方法B之孔徑、細孔分佈之控制,於步驟B1中取決於樹脂中之高鹵化乙烯及偏二鹵乙烯之組成莫耳%、樹脂之分子量、塗敷液B中之樹脂濃度,該等之值越變高孔徑越變小。又,於步驟B2中可藉由使膜厚變薄而使膜中之細孔分佈為尖銳。進而,於步驟B3中混合溶液中之鹼金屬氫氧化物、胺等之鹼(脫鹵化氫劑)之濃度越高,混合溶液中之偏二鹵乙烯樹脂之良溶劑之濃度越高,孔徑變得越大。於步驟B4中,與步驟A4相同有碳化溫度變得越高孔徑變得越小之傾向,但可根據碳前驅物中之殘存鹵素量而於600℃~1200℃下增大孔徑、細孔分佈。進而,與步驟A4相同地亦可藉由利用活化處理增大孔徑及細孔分佈而調整細孔結構。以下敍述參考文獻G、參考文獻H之例作為方法B之例。 The control of the pore size and the pore distribution by the method B depends on the composition of the high halogenated ethylene and the vinylidene halide in the resin, the molecular weight of the resin, and the resin concentration in the coating liquid B in the step B1. The higher the value, the smaller the aperture becomes. Further, in step B2, the pores in the film can be made sharp by making the film thickness thin. Further, the higher the concentration of the alkali metal hydroxide, the amine or the like (dehydrohalogenating agent) in the mixed solution in the step B3, the higher the concentration of the good solvent of the vinylidene halide resin in the mixed solution, and the pore diameter becomes The bigger it is. In the step B4, as in the step A4, the carbonization temperature becomes higher as the pore diameter becomes smaller, but the pore diameter and pore distribution can be increased at 600 to 1200 ° C depending on the amount of halogen remaining in the carbon precursor. . Further, similarly to the step A4, the pore structure and the pore distribution can be increased by the activation treatment to adjust the pore structure. An example of the reference G and the reference H will be described below as an example of the method B.
步驟B1係使用THF作為PVDC樹脂之良溶劑於碳質原料中溶解偏二氯乙烯(VDC)組成60莫耳%以上之偏二氯乙烯樹脂或偏二氯乙烯共聚物之樹脂(總稱為PVDC樹脂)而製作塗敷液B。 Step B1 uses THF as a good solvent for PVDC resin to dissolve vinylidene chloride (VDC) in a carbonaceous raw material to form a resin of a vinylidene chloride resin or a vinylidene chloride copolymer of 60 mol% or more (collectively referred to as PVDC resin). ), the coating liquid B was prepared.
步驟B2係以碳化後之膜厚成為100~850nm之方式於玻璃製脫模基板上旋轉塗佈塗敷液B並於80℃下進行熱風乾燥而獲得薄膜狀之PVDC樹脂膜。 In the step B2, the coating liquid B was spin-coated on the glass release substrate so that the film thickness after carbonization was 100 to 850 nm, and hot air drying was performed at 80 ° C to obtain a film-form PVDC resin film.
步驟B3係使用鹼金屬氫氧化物KOH之水溶液、良溶劑THF及不良溶劑甲醇之混合溶液對PVDC樹脂膜進行脫氯化氫反應處理(脫HCl處理)而獲得PVDC系碳前驅物膜。 In the step B3, the PVDC resin film is subjected to a dehydrochlorination reaction treatment (de-HCl treatment) using a mixed solution of an alkali metal hydroxide KOH aqueous solution, a good solvent THF, and a poor solvent methanol to obtain a PVDC-based carbon precursor film.
最後步驟B4可於氮氣氛圍下且於600~3000℃下對該PVDC系碳 前驅物膜進行拉伸加熱碳化而獲得本實施形態之PVDC系碳多孔膜。 The final step B4 can be used to treat the PVDC carbon in a nitrogen atmosphere at 600~3000 °C. The precursor film was subjected to stretching and heating carbonization to obtain a PVDC-based carbon porous film of the present embodiment.
PVDC樹脂可使用參考文獻G之[0011]~[0012]記載之組成者。PVDC樹脂中之VDC成分之莫耳含有率越高,於1分子中由步驟B3之脫HCl反應所產生之多烯結構變得越多,容易發生於複數之分子間之交聯結構,不溶解、熔融而直接以固體狀態進行碳化,因而較佳。 As the PVDC resin, those composed of [0011] to [0012] of Reference G can be used. The higher the molar content of the VDC component in the PVDC resin, the more the polyene structure produced by the dehydrochlorination reaction of the step B3 in one molecule becomes more likely to occur in the cross-linking structure between the plural molecules, and is insoluble. It is preferred to melt and directly carbonize in a solid state.
然而,VDC組成100莫耳%之PVDC樹脂因難以均勻地溶解,該PVDC膜較硬且脆而難以使用,從而較佳為偏二氯乙烯共聚物(VDC共聚物)。VDC共聚物中之VDC之莫耳組成比較佳為0.6(60莫耳%),較佳為0.8(80莫耳%)以上,更佳為0.9(90莫耳%)以上。 However, the VDC composition of 100 mol% of the PVDC resin is difficult to uniformly dissolve, and the PVDC film is hard and brittle and difficult to use, and thus is preferably a vinylidene chloride copolymer (VDC copolymer). The VDC molar composition in the VDC copolymer is preferably 0.6 (60 mol%), preferably 0.8 (80 mol%) or more, more preferably 0.9 (90 mol%) or more.
再者,相對於以(-CH2-CHCl-)n[Cl含有率57wt%]之結構式所給予之通常之PVC樹脂,若為其結構式為[(-CH2-CHCl-)4-CHCl-CHCl-]n[Cl含有率61wt%]之氯化PVC樹脂或為[(-CHCl-C(CH3)Cl-CHCl-CHCl-)n[Cl含有率68wt%]之氯化橡膠等氯含有率(Cl含有率)約超過60wt%的高氯化PVC樹脂,則於步驟B3中可以與(-CH2-CCl2-)n[Cl含有率73wt%]之PVDC樹脂相同之方式獲得較高之交聯結構體,即便於步驟B4之碳化時亦可不進行熔融而進行碳化,可用作本實施形態之碳質原料。 Further, the usual PVC resin given by the structural formula of (-CH 2 -CHCl-) n [Cl content: 57 wt%] is a structural formula of [(-CH 2 -CHCl-) 4 - CHCl-CHCl-] n [Cl content: 61% by weight] of chlorinated PVC resin or chlorinated rubber such as [(-CHCl-C(CH 3 )Cl-CHCl-CHCl-) n [Cl content: 68% by weight] A highly chlorinated PVC resin having a chlorine content (Cl content) of more than 60% by weight can be obtained in the same manner as in the case of (-CH 2 -CCl 2 -) n [Cl content: 73% by weight] of the PVDC resin in the step B3. The higher crosslinked structure can be carbonized without being melted even in the case of carbonization in the step B4, and can be used as the carbonaceous raw material of the present embodiment.
作為塗敷液B,可使用被稱作乳膠之PVDC樹脂之水分散液或將PVDC樹脂溶解於參考文獻G之[0014]中所示之THF、1,4-二烷、環己烷、環戊酮、氯苯、二氯苯、DMF、甲基乙基酮、乙酸乙酯等PVDC樹脂之良溶劑中所得的PVDC樹脂溶液。良溶劑較佳為THF、DMF。 As the coating liquid B, an aqueous dispersion of a PVDC resin called latex or a PVDC resin dissolved in THF, 1,4-two shown in [0014] of Reference G can be used. A PVDC resin solution obtained in a good solvent of a PVDC resin such as alkane, cyclohexane, cyclopentanone, chlorobenzene, dichlorobenzene, DMF, methyl ethyl ketone or ethyl acetate. The good solvent is preferably THF or DMF.
PVDC系碳前驅物膜可使用參考文獻G之[0014]~[0015]所示之鹼性處理液之組成或處理條件對混合溶液進行脫HCl處理,又,PVDC系碳多孔膜可於參考文獻G之[0017]所示之碳化條件下進行。再者,由於本實施形態之PVDC樹脂膜、PVDC系碳前驅物膜為薄膜,因此 可較該專利文獻低且短地抑制鹼性(鹼)濃度或良溶劑濃度、脫HCl處理溫度、以及脫HCl處理或碳化處理時間。 The PVDC-based carbon precursor film can be subjected to de-HCl treatment using the composition or processing conditions of the alkaline treatment liquid shown in Reference [0014] to [0015], and the PVDC-based carbon porous membrane can be used as a reference. G is carried out under carbonization conditions as shown in [0017]. In addition, since the PVDC resin film and the PVDC-based carbon precursor film of the present embodiment are thin films, The alkali (base) concentration or the good solvent concentration, the de-HCl treatment temperature, and the de-HCl treatment or carbonization treatment time can be suppressed lower and shorter than the patent document.
參考文獻G中之圖3記載PVDC系碳多孔膜之TEM照片。該文獻之圖2為PVDC系碳多孔膜之細孔分佈之曲線圖。根據該文獻之圖3可知,圍繞細孔壁之球狀之多數之細孔形成PVDC系碳多孔膜,根據該文獻之圖2可知,L≒13nm(α≒1.0)之細孔於多數形成碳多孔膜中。如此,偏二鹵乙烯系碳多孔膜有成為與碳氣凝膠系碳多孔膜相比細孔壁厚較厚且牢固之碳多孔膜之傾向。雖然認為現實之碳多孔膜具有立方體軸群細孔結構模型與立方體壁群細孔結構模型之中間結構,但大膽而言可知偏二鹵乙烯系碳多孔膜之細孔結構為類似立方體壁群細孔結構模型之結構。 A TEM photograph of a PVDC-based carbon porous film is shown in Fig. 3 of Reference G. Figure 2 of this document is a graph showing the pore distribution of a PVDC-based carbon porous membrane. According to Fig. 3 of the document, it is known that a PVDC-based carbon porous film is formed around a spherical majority of pores of the pore wall. According to Fig. 2 of the literature, pores of L≒13 nm (α≒1.0) form carbon in a majority. In the porous membrane. In this way, the vinylidene halide-based carbon porous film tends to have a thick and thick carbon porous film as compared with the carbon aerogel-based carbon porous film. Although it is considered that the realistic carbon porous membrane has an intermediate structure of a cubic pore group pore structure model and a cubic wall group pore structure model, it is known that the pore structure of the vinylidene halide-based carbon porous membrane is similar to a cubic wall group. The structure of the pore structure model.
以下敍述有效利用參考文獻H之方法。參考文獻H介紹如下方法:使用偏二氟乙烯樹脂(PVDF樹脂)薄膜代替PVDC樹脂,使用有機系強鹼DBU、PVDF之良溶劑DMF及PVDF之不良溶劑乙醇之混合溶液進行脫氟化氫處理而獲得PVDF系碳前驅物膜後,進行碳化處理而獲得具有多數之中孔之PVDF系碳多孔膜,該PVDF系碳多孔膜亦可用作本實施形態之碳多孔膜。 The method of effectively utilizing Reference H is described below. Reference H describes the following method: using a vinylidene fluoride resin (PVDF resin) film instead of the PVDC resin, and using a mixed solution of an organic strong base DBU, a good solvent DMF of PVDF, and a poor solvent of PVDF, the dehydrofluorination treatment is carried out to obtain PVDF. After the carbon precursor film is carbonized, a PVDF-based carbon porous film having a plurality of mesopores is obtained, and the PVDF-based carbon porous film can also be used as the carbon porous film of the present embodiment.
進而,參考文獻H介紹方法A與方法B之折中方法(方法AB),該方法亦可應用於本實施形態。即,如圖5所示之碳多孔膜之製造步驟般,步驟AB1係使用數量平均分子量M之不同之氯乙烯樹脂(PVC樹脂)作為碳質原料,將PVC樹脂粉末溶解於DMF中,並於室溫下於該溶液中滴加DBU,使PVC樹脂之一部分脫HCl,而調製包括PVC、DMF及DBU 3成分之黏稠之塗敷液AB。 Further, Reference H describes a compromise method (Method AB) of Method A and Method B, and the method can also be applied to this embodiment. That is, as in the manufacturing step of the carbon porous film shown in FIG. 5, the step AB1 uses a vinyl chloride resin (PVC resin) having a different number average molecular weight M as a carbonaceous raw material, and dissolves the PVC resin powder in DMF. DBU was added dropwise to the solution at room temperature to partially dehydrate the PVC resin, and a viscous coating liquid AB comprising PVC, DMF and DBU 3 components was prepared.
繼而,步驟AB2係將塗敷液AB以碳化後之膜厚成為100nm~63μm之方式塗敷、成膜於脫模薄膜或脫模基板上。此時,以包圍脫模薄膜或脫模基板之周圍並使其密閉而塗膜不自脫模薄膜或脫模基板之 周圍流出之方式、且以溶劑(水)蒸發而塗敷液之組成發生變化或成為膜細孔之區域不崩解之方式密封後,於室溫~70℃下依序加熱使其充分凝膠化而獲得PVC系凝膠膜。 Then, in step AB2, the coating liquid AB is applied and formed on the release film or the release substrate so that the film thickness after carbonization is 100 nm to 63 μm. At this time, the coating film is surrounded by the periphery of the release film or the release substrate, and the film is not coated from the release film or the release substrate. The method of flowing out around is sealed by evaporation of solvent (water) and the composition of the coating liquid is changed or the area of the pores of the membrane is not disintegrated, and then heated at room temperature to 70 ° C to form a gel. A PVC-based gel film was obtained.
步驟AB3係將PVC系凝膠膜自脫模薄膜或脫模基板剝離後,直接利用液體CO2置換凝膠中之DMF後,進行CO2超臨界乾燥,使溶劑飛散而獲得多孔性之PVC系氣凝膠膜。 Step AB3: After peeling off the PVC-based gel film from the release film or the release substrate, the DMF in the gel is directly replaced by liquid CO 2 , and then CO 2 supercritical drying is performed to scatter the solvent to obtain a porous PVC system. Aerogel film.
最後,步驟AB4可於空氣中(O2下)且於150~250℃下階段性地進行加熱而使PVC系氣凝膠膜熱穩定化,或利用碘(I2)之蒸氣使PVC系凝膠膜於150~250℃下熱穩定化後,以與PVDC系碳多孔膜、PVDF系碳多孔膜相同之方式進而於惰性氛圍下或氮氣氛圍下加熱至700℃~3500℃(此處為1000℃)進行碳化而獲得藉由PVC系碳氣凝膠所得之碳多孔膜。 Finally, step AB4 can be thermally stabilized in air (at O 2 ) and at 150 to 250 ° C to thermally stabilize the PVC-based aerogel film, or to condense the PVC with iodine (I 2 ) vapor. After the film is thermally stabilized at 150 to 250 ° C, it is heated to 700 ° C to 3500 ° C in an inert atmosphere or a nitrogen atmosphere in the same manner as the PVDC carbon porous film or the PVDF carbon porous film (here, 1000). °C) Carbonization was carried out to obtain a carbon porous film obtained by a PVC-based carbon aerogel.
若於步驟AB4中直接加熱PVC氣凝膠膜,則PVC氣凝膠膜發生熔融,其細孔結構崩解,因此與將氯化PVC樹脂或PVDC樹脂作為碳質原料之情形不同,而需要藉由熱穩定化之細孔結構之固定化。 If the PVC aerogel film is directly heated in the step AB4, the PVC aerogel film is melted, and the pore structure thereof is disintegrated, so that it is different from the case where the chlorinated PVC resin or the PVDC resin is used as the carbonaceous raw material, and it is necessary to borrow Immobilization of the pore structure by heat stabilization.
參考文獻H中之圖8記載PVC系碳氣凝膠之細孔分佈。根據圖8可知分子量M於細孔分佈中之相依性、PVC濃度之相依性。 Fig. 8 of Reference H describes the pore distribution of a PVC-based carbon aerogel. According to Fig. 8, the dependence of the molecular weight M on the pore distribution and the dependence of the PVC concentration can be known.
以下根據參考文獻H所記載之代表性實驗值並依照方法AB,求出於假定為獲得本實施形態之碳多孔膜者時之包括PVC、DMF、DBU3成分之溶液中的PVC之重量百分比濃度(wt%濃度,[PVC])、PVC之數量平均分子量(M)、DBU分子相對於PVC分子中之氯原子(Cl)的莫耳比(DBU/Cl)與所得之結構參數之多元回歸式、式(47)、式(48)。視密度ρ成為ρ=2.15×10-1×([PVC])+4.64×10-2×(M×104)+5.52×10-2×(DBU/Cl)-2.87×10-1 (47) Hereinafter, the weight percentage concentration of PVC in a solution including the components of PVC, DMF, and DBU3 when the carbon porous film of the present embodiment is assumed is obtained according to the representative experimental value described in the reference H and according to the method AB ( Wt% concentration, [PVC]), the number average molecular weight of the PVC (M), the molar ratio of the DBU molecule to the chlorine atom (Cl) in the PVC molecule (DBU/Cl), and the multivariate regression of the resulting structural parameters, Formula (47), formula (48). The apparent density ρ becomes ρ = 2.15 × 10 -1 × ([PVC]) + 4.64 × 10 -2 × (M × 10 4 ) + 5.52 × 10 -2 × (DBU / Cl) - 2.87 × 10 -1 (47 )
R*2=0.86, 各因子之依存率成為[PVC]為66%,M為27%,DBU/Cl為7%。 R *2 =0.86, the dependency ratio of each factor was 66% for [PVC], 27% for M, and 7% for DBU/Cl.
又,細孔半徑r成為r=-4.31×([PVC])-1.12×(M×104)+1.83×(DBU/Cl)+2.74×101(48) Further, the pore radius r becomes r = -4.31 × ([PVC]) - 1.12 × (M × 10 4 ) + 1.83 × (DBU / Cl) + 2.74 × 10 1 (48)
R*2=0.74,各因子之依存率成為[PVC]為58%,M為32%,DBU/Cl為10%。再者,與細孔半徑r對應之α係依照式2將r翻一倍並除以λ而獲得。 R *2 = 0.74, and the dependency ratio of each factor was 58% for [PVC], 32% for M, and 10% for DBU/Cl. Further, α corresponding to the pore radius r is obtained by doubling r and dividing by λ according to Formula 2.
根據式(47)及式(48)可知以下情況。伴隨[PVC]增大而視密度ρ變大,與細孔半徑r對應之α變小。另一方面,伴隨M增大而ρ變大α變小,伴隨DBU/Cl增大而ρ及α變大。因此,為了獲得較大之細孔,較佳為儘可能地減小[PVC]、M且儘可能地增大DBU/Cl。 The following cases are known from the formulas (47) and (48). As the [PVC] increases, the apparent density ρ becomes larger, and α corresponding to the pore radius r becomes smaller. On the other hand, as M increases, ρ becomes larger and α becomes smaller, and as DBU/Cl increases, ρ and α become larger. Therefore, in order to obtain larger pores, it is preferable to reduce [PVC], M as much as possible and to increase DBU/Cl as much as possible.
進而,於近似第2結構參數群與T、△之多元回歸式即立方體壁群細孔模型之情形時,若為λ=13.5nm則使用式(33)、式(34),若為λ=6.75nm則使用式(35)、式(36),於近似立方體軸群細孔模型之情形時,若為λ=13.5nm則使用式(37)、式(38),若為λ=6.75nm則使用式(39)、式(40),藉此可得知滿足本實施形態之課題之Ti、△i、Di之組成範圍。 Further, in the case of approximating the second structural parameter group and the multi-regressive equation of T and Δ, that is, the cubic wall group pore model, if λ = 13.5 nm, the equations (33) and (34) are used, and if λ = At 6.75 nm, the equations (35) and (36) are used. In the case of the approximate cubic axis group pore model, if λ = 13.5 nm, the equations (37) and (38) are used, and if λ = 6.75 nm Then, using the formulas (39) and (40), the composition range of Ti, Δi, and Di satisfying the problem of the present embodiment can be known.
按以上之方式使用於分子結構中因化學反應過程或碳化過程而結構固定化並且產生氣泡之原料,使其進行化學反應或碳化反應,將於該等過程中產生之氣泡或隙間作為細孔,藉此可獲得作為鹵化乙烯樹脂系或偏二鹵乙烯樹脂系碳多孔膜之本實施形態之碳多孔膜。 In the above manner, it is used in a molecular structure in which a structure is immobilized by a chemical reaction process or a carbonization process and a bubble is generated, and a chemical reaction or a carbonization reaction is performed, and bubbles or gaps generated in the processes are used as pores. Thus, a carbon porous film of the present embodiment which is a halogenated vinyl resin-based or vinylidene halide-based carbon porous film can be obtained.
2-2-3.補充處理 2-2-3. Supplementary treatment
作為圖5所示之補充處理,獲得本實施形態之碳多孔膜後,為了防止由來自EUV之高輸出光源之光造成的碳多孔膜之氧化、還原,而於碳多孔膜之表面之單面或兩面於滿足本實施形態之課題之目標值之範圍內利用公知之濺鍍法、真空蒸鍍法等方法被覆數nm Si、SiC、 SiO2、Si3N4、Y、Mo、Ru、Rh等。就EUV光之消光係數較低,折射率接近1.0,進而與碳反應而於碳膜表面形成強度優異之數nm之SiC膜而言,尤佳為Si。 As a supplementary treatment shown in FIG. 5, after obtaining the carbon porous film of the present embodiment, one side of the surface of the carbon porous film is prevented in order to prevent oxidation and reduction of the carbon porous film by light from a high output light source of EUV. Or, on both sides, a predetermined number of Si, SiC, SiO 2 , Si 3 N 4 , Y, Mo, Ru, Rh are coated by a known sputtering method, a vacuum deposition method, or the like within a range satisfying the target value of the problem of the present embodiment. Wait. The SiC film having a low extinction coefficient of EUV light and having a refractive index close to 1.0 and further reacting with carbon to form an excellent strength on the surface of the carbon film is preferably Si.
3.本實施形態之護膜 3. The film of this embodiment
圖6為表示護膜之立體圖。圖7為表示沿著圖6中之VII-VII線之剖面構成之圖。本實施形態之護膜10係如圖6所示將上述碳多孔膜作為護膜用膜1並使用膜接著劑2接著於框架3上所得者。又,於與護膜之掩膜之接著面側施加與掩膜黏著劑(亦包含其保護薄膜在內)或框架之接合機構4。 Fig. 6 is a perspective view showing a protective film. Fig. 7 is a view showing a configuration of a cross section taken along line VII-VII in Fig. 6; The protective film 10 of the present embodiment is obtained by using the carbon porous film as the film for film 1 and using the film adhesive 2 on the frame 3 as shown in Fig. 6 . Further, a bonding means 4 with a mask adhesive (including a protective film) or a frame is applied to the back surface side of the mask of the protective film.
本實施形態中使用之框架3可用於通常之護膜,可使用側面設置有1個以上之通氣孔5之框架。作為框架原材料,較佳為添加Zn與Mg之於鋁合金之中最能提高強度之Al-Zn系鋁合金框架(7000系鋁合金框架)。為了抑制EUV光照射至框架時之雜散光,進而較佳為添加EUV光之折射率接近真空之折射率1.0且消光係數k亦較低之元素Mg與Si提昇強度、耐蝕性之Al-Mg-Si系鋁合金框架(6000系鋁合金框架)。或亦可使用對鋁合金框架之表面蒸鍍該等元素Si、SiC、Mg、Zn所得之框架。 The frame 3 used in the present embodiment can be used for a general film, and a frame in which one or more vent holes 5 are provided on the side surface can be used. As the frame material, an Al-Zn-based aluminum alloy frame (a 7000-series aluminum alloy frame) in which Zn and Mg are added to an aluminum alloy to increase the strength is preferable. In order to suppress the stray light when the EUV light is irradiated to the frame, it is preferable to add the Al-Mg- which enhances the strength and corrosion resistance of the element Mg and Si which have a refractive index close to 1.0 and a low extinction coefficient k. Si-based aluminum alloy frame (6000 series aluminum alloy frame). Alternatively, a frame obtained by vapor-depositing the elements such as Si, SiC, Mg, or Zn on the surface of the aluminum alloy frame may be used.
作為掩膜黏著劑4,例如可使用日本專利特開2011-107488公報中介紹之ArF用護膜所使用之(甲基)丙烯酸烷基酯與多官能性環氧化合物之反應產物的黏著劑。若對黏著劑照射EUV光,則有自黏著劑之成分產生分解氣體之可能性,因此於將框架接著於掩膜之情形時,可以不自框架寬度之端溢出之方式較框架3之寬度狹窄地塗佈掩膜黏著劑。又,關於掩膜黏著劑4之配置形態,作為一形態,如圖8(a)所示,可於設置於框架3之槽6配置掩膜黏著劑4。此時,於槽6中以較槽6之深度稍厚地塗佈掩膜黏著劑4。又,如圖8(b)所示,亦可於配置有掩膜黏著劑4之槽6之兩側以掩膜黏著劑不自框架之幅面溢出之方式進 而設置槽7、8。 As the masking adhesive 4, for example, an adhesive of a reaction product of an alkyl (meth) acrylate and a polyfunctional epoxy compound used for the ArF film described in Japanese Laid-Open Patent Publication No. 2011-107488 can be used. If the adhesive is irradiated with EUV light, there is a possibility that the component of the self-adhesive agent generates a decomposition gas. Therefore, when the frame is attached to the mask, the width of the frame 3 may not be narrower than the end of the frame width. Apply a mask adhesive. Moreover, as an aspect of the arrangement of the mask adhesive 4, as shown in FIG. 8(a), the mask adhesive 4 can be disposed in the groove 6 provided in the frame 3. At this time, the mask adhesive 4 is applied to the groove 6 slightly thicker than the depth of the groove 6. Further, as shown in FIG. 8(b), the mask adhesive may be placed on both sides of the groove 6 on which the mask adhesive 4 is disposed, so that the mask adhesive does not overflow from the frame of the frame. The slots 7, 8 are provided.
然而,通常EUV用掩膜多數情況下以將護膜剝離而再次使用,此時存在於EUV用掩膜上之掩膜黏著劑之糊劑殘留成為問題之情形。因此,作為護膜10與EUV用掩膜之接合機制,更佳為:代替掩膜黏著劑而如圖9所示將於鐵Fe、鈷Co、鎳Ni等強磁體之線芯11上捲附有導電性線圈12(金屬奈米線、碳奈米線等)之電磁鐵13埋入至框架3之槽6中或使用黏著劑等進行接合,另一方面,於EUV用掩膜側亦設置強磁體面,藉此進行電磁性接合。又,代替於框架3上設置電磁鐵13,可於EUV用掩膜側設置電磁鐵且於框架之槽中設置強磁體之線等。 However, in general, the mask for EUV is often used again by peeling off the protective film, and the paste remaining in the mask for EUV is a problem. Therefore, as the bonding mechanism between the protective film 10 and the mask for EUV, it is more preferable to attach the core 11 of the ferromagnetic material such as iron Fe, cobalt Co, nickel Ni, etc. as shown in FIG. 9 instead of the mask adhesive. The electromagnet 13 having the conductive coil 12 (metal nanowire, carbon nanowire, etc.) is embedded in the groove 6 of the frame 3 or joined by an adhesive or the like, and is also provided on the mask side of the EUV. A strong magnet surface is used for electromagnetic bonding. Further, instead of providing the electromagnet 13 on the frame 3, an electromagnet may be provided on the mask side of the EUV, and a line of a strong magnet or the like may be provided in the groove of the frame.
再者,作為強磁體面於可製成於零膨脹玻璃(LTE玻璃)上交替地蒸鍍Si與鉬(Mo)40層對以上之多層膜之EUV用掩膜上之設置方法,只要於與框架接著之掩膜之區域預先貼附由鎳鐵合金薄膜或非晶質稀土類鐵系合金膜等強磁性構成之框或片材,或利用真空蒸鍍法、濺鍍蒸鍍、電泳法製作該等強磁體薄膜即可。 Further, as a method of setting a strong magnet surface on an EUV mask which can be formed by alternately vapor-depositing Si and molybdenum (Mo) 40 layers or more on zero-expansion glass (LTE glass), A frame or sheet made of a ferromagnetic material such as a nickel-iron alloy film or an amorphous rare-earth iron-based alloy film is attached to the region of the mask next to the frame, or is formed by vacuum deposition, sputtering, or electrophoresis. A strong magnet film can be used.
膜接著劑2較佳為使用具有接著力且於照射EUV光之情形時分解氣體之產生亦較少,對曝光不造成影響之無機系接著劑。例如,可使用混有無機物之環氧樹脂系接著劑、例如藤倉化成股份有限公司製造之A-3/C-3(填料中使用碳黑之環氧樹脂系接著劑)、混有無機物之苯酚系接著劑、例如藤倉化成股份有限公司製造之FC-403R.XC-223(填料中使用石墨之苯酚樹脂系接著劑)、或矽酸鹽系、磷酸酯系、膠體氧化矽系等無機物系反應形接著劑。 The film adhesive 2 is preferably an inorganic-based adhesive which does not have an influence on the exposure when the decomposition gas is generated in a case where the bonding force is applied and the EUV light is irradiated. For example, an epoxy resin-based adhesive mixed with an inorganic material, for example, A-3/C-3 manufactured by Fujikura Kasei Co., Ltd. (an epoxy resin-based adhesive using carbon black in a filler), and an phenol mixed with an inorganic substance can be used. An adhesive, such as FC-403R manufactured by Fujikura Kasei Co., Ltd. XC-223 (a phenol resin-based adhesive using graphite as a filler) or an inorganic-based reactive adhesive such as a citrate-based, phosphate-based or colloidal lanthanum oxide.
繼而,對護膜10之製造方法進行說明。首先,將預先塗佈有膜接著劑2之框架3與本實施形態之護膜用膜1接著後,於使用掩膜黏著劑4之情形時,於框架3之與EUV用掩膜之接著面側塗佈掩膜黏著劑4,其後貼附保護薄膜,藉此可獲得本實施形態之護膜10。 Next, a method of manufacturing the protective film 10 will be described. First, the frame 3 to which the film adhesive 2 is applied in advance is placed next to the film 1 for a film of the present embodiment, and when the mask adhesive 4 is used, the frame 3 and the mask for the EUV are used. The mask adhesive 4 is applied to the side, and then a protective film is attached thereto, whereby the protective film 10 of the present embodiment can be obtained.
再者,於框架3與EUV用掩膜之接合不使用電磁式等之黏著劑之 情形時不需要該操作。可使用於框架3與EUV用掩膜之接著面側接著有電磁鐵13等之框架3。 Furthermore, the bonding of the frame 3 and the EUV mask does not use an electromagnetic adhesive or the like. This is not required for the situation. The frame 3 for the frame 3 and the EUV mask can be attached to the frame 3 of the electromagnet 13 or the like.
[產業上之可利用性] [Industrial availability]
本發明可於EUV光微影之領域較佳地利用保護光微影掩膜免受污染之護膜用膜及護膜。 The present invention can preferably utilize a film for protecting a film and a film for protecting a photolithographic mask from contamination in the field of EUV photolithography.
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