TWI573664B - Polish machine and detector - Google Patents
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Description
本發明是有關於一種感測技術,尤其是有關於一種用於晶圓製程機台的感測技術。 The present invention relates to a sensing technique, and more particularly to a sensing technique for a wafer processing machine.
化學研磨製程是半導體製程中一項相當重要的程序。在進行化學研磨製程時,需要將晶圓的表面固定在一拋光墊上。接著,將拋光墊與晶圓二者以高速進行旋轉,並且二者旋轉的方向相同。由於晶圓與拋光墊在進行化學研磨製程時都會以高速旋轉,因此容易發生滑片的事件,就是晶圓滑出拋光墊而損毀。為了避免滑片事件的發生,一般在化學研磨機台上都會配置偵測器,以偵測晶圓是否滑出拋光墊。一旦偵測器偵測到晶圓滑出拋光墊,就會使化學研磨機台停止運作,以避免晶圓破碎。 Chemical polishing processes are a very important process in semiconductor manufacturing. When performing a chemical polishing process, the surface of the wafer needs to be attached to a polishing pad. Next, both the polishing pad and the wafer are rotated at a high speed, and both rotate in the same direction. Since the wafer and the polishing pad rotate at a high speed during the chemical polishing process, the slider event is liable to occur, that is, the wafer slides out of the polishing pad and is damaged. In order to avoid the occurrence of a slider event, a detector is generally disposed on the chemical polishing machine to detect whether the wafer slides out of the polishing pad. Once the detector detects that the wafer has slipped out of the polishing pad, it stops the chemical grinding machine from running.
一般來說,習知用於化學研磨機台上的偵測器所發出的單一偵測光束,在一環境光源強度的額定條件下是可以被辨識的。此額定條件是環境光源為白熱光(白熾燈)時的光強度不可以超過5000lux,而當環境光源為太陽光時的光強度不可以超過10000lux。 In general, a single detection beam emitted by a detector used on a chemical polishing machine can be identified under the rated conditions of ambient light intensity. The rated condition is that the light intensity when the ambient light source is white hot light (incandescent light) cannot exceed 5000 lux, and the light intensity when the ambient light source is sunlight cannot exceed 10,000 lux.
有些化學研磨機台的平台顏色為黑色,而晶圓背面的顏色也是接近黑色。因此,當上述的化學研磨機台發生 滑片事件時,由於晶圓背面的顏色非常接近平台顏色,因此習知的偵測器並無法有效地偵測到滑片事件的發生。如此一來,就會導致整體晶圓製程的良率下降,並且使得成本上升。 Some chemical grinding machines have a black color on the platform and a black color on the back of the wafer. Therefore, when the above chemical grinding machine occurs In the case of a slider event, since the color of the back side of the wafer is very close to the color of the platform, the conventional detector cannot effectively detect the occurrence of the slider event. As a result, the overall wafer process yield is reduced and the cost is increased.
有鑒於習知的偵測器無法有效地偵測到平台顏色為黑色的化學研磨機台是否發生滑片的事件,因此本發明提供一種偵測技術,可以應用於平台顏色為黑色的化學研磨機台。 In view of the fact that the conventional detector cannot effectively detect whether a chemical polishing machine with a black color on the platform has a slide event, the present invention provides a detection technology that can be applied to a chemical polishing machine with a black color of the platform. station.
本發明提供一種偵測模組,其適用於一機台,而此機台具有至少一平台和一工作治具。工作治具位於平台上,並且用來承載一晶圓以進行一預設製程。當預設製程在進行時,工作治具會高速的旋轉,而本發明之偵測模組包括偵測器和偵測電路。偵測器可以輸出一偵測電流,並且具有光發射單元和光感應單元。光發射單元會向平台和工作治具的交界處發射一單一偵測光束,而此單一偵測光束的強度至少大於一光強度臨界值。於一實施例中,此光強度臨界值在白熱光源作為環境光源時為20000lux,而在太陽光源作為環境光源時為30000lux。另外,光感應單元用來感應被平台反射的單一偵測光束而產生偵測電流。當晶圓在預設製程進行時滑出工作治具而干涉到單一偵測光束行進的路線時,偵測電流的大小就會超過一電流臨界值。此外,偵測電路可以耦接偵測器,以接收偵測電流,並且偵測電路更具有一第一接點和一第二接點。當偵測電流的大小超過電流臨界值時,偵測電路會將第一接點與第二接點短路使兩接點具相同電位。 The invention provides a detection module suitable for a machine having at least one platform and a working jig. The work fixture is located on the platform and is used to carry a wafer for a predetermined process. When the preset process is in progress, the work fixture rotates at a high speed, and the detection module of the present invention includes a detector and a detection circuit. The detector can output a detection current and has a light emitting unit and a light sensing unit. The light emitting unit emits a single detection beam to the junction of the platform and the work fixture, and the intensity of the single detection beam is at least greater than a light intensity threshold. In one embodiment, the light intensity threshold is 20000 lux when the white heat source is the ambient light source and 30,000 lux when the solar source is the ambient light source. In addition, the light sensing unit is configured to sense a single detection beam reflected by the platform to generate a detection current. When the wafer slides out of the work fixture during the preset process and interferes with the path of the single detection beam, the detected current will exceed a current threshold. In addition, the detecting circuit can be coupled to the detector to receive the detecting current, and the detecting circuit further has a first contact and a second contact. When the magnitude of the detected current exceeds the current threshold, the detecting circuit shorts the first contact and the second contact so that the two contacts have the same potential.
從另一觀點來看,本發明還提供一種研磨機台, 具有一第一訊號端和一第二訊號端,並且包括至少一平台、一研磨治具、一偵測器、一偵測電路和一控制模組。研磨治具位於平台上,並且用來承載一晶圓,以對此晶圓進行一研磨製程。光發射單元可以輸出偵測電流,並且具有光發射單元和光感應單元。光發射單元會向平台和研磨治具的交界處發射一單一偵測光束,而此單一偵測光束的強度至少大於一光強度臨界值。於一實施例中,此光強度臨界值在白熱光源作為環境光源時為20000lux,而在太陽光源作為環境光源時為30000lux。另外,光感應單元用來感應被研磨平台反射的單一偵測光束而產生偵測電流。當晶圓在研磨製程進行時滑出研磨治具而干涉到單一偵測光束行進的路線時,光感應單元所輸出之偵測電流的大小就會超過一電流臨界值。此外,偵測電路可以耦接偵測器,以接收偵測電流,並且偵測電路更具有一第一接點和一第二接點,分別耦接研磨機台的第一訊號端和該第二訊號端,當偵測電流的大小超該電流臨界值時,偵測電路會將第一接點和第二接點短路使兩接點具有相同電位的電壓訊號,以使第一訊號端和第二訊號端具有相同的電位。而控制模組則在監測到第一訊號端和第二訊號端的電位相同時,停止研磨治具的作動。 From another point of view, the present invention also provides a grinding machine table, The device has a first signal terminal and a second signal terminal, and includes at least one platform, a grinding fixture, a detector, a detecting circuit and a control module. The polishing fixture is located on the platform and is used to carry a wafer to perform a grinding process on the wafer. The light emitting unit can output a detecting current and has a light emitting unit and a light sensing unit. The light emitting unit emits a single detection beam to the interface of the platform and the grinding fixture, and the intensity of the single detection beam is at least greater than a light intensity threshold. In one embodiment, the light intensity threshold is 20000 lux when the white heat source is the ambient light source and 30,000 lux when the solar source is the ambient light source. In addition, the light sensing unit is configured to sense a single detection beam reflected by the polishing platform to generate a detection current. When the wafer slides out of the grinding fixture during the polishing process and interferes with the route of the single detection beam, the detection current output by the light sensing unit exceeds a current threshold. In addition, the detecting circuit can be coupled to the detector to receive the detecting current, and the detecting circuit further has a first contact and a second contact respectively coupled to the first signal end of the grinding machine and the first At the second signal end, when the magnitude of the detected current exceeds the current threshold, the detecting circuit shorts the first contact and the second contact so that the two contacts have the same potential voltage signal, so that the first signal end and The second signal terminals have the same potential. The control module stops the operation of the grinding fixture when the potentials of the first signal end and the second signal end are the same.
由於本發明採用的偵測器所發出之單一偵測光束的光強度達上述的光強度臨界值,因此在研磨平台為黑色的情況下,仍舊可以偵測到是否有滑片的事件發生。 Since the light intensity of the single detection beam emitted by the detector used in the present invention reaches the above-mentioned light intensity threshold value, if the polishing platform is black, it is still possible to detect whether or not a slider event occurs.
100‧‧‧機台 100‧‧‧ machine
102‧‧‧平台 102‧‧‧ platform
104‧‧‧晶圓 104‧‧‧ wafer
106‧‧‧工作治具 106‧‧‧Work fixtures
112‧‧‧保持器 112‧‧‧ Keeper
114‧‧‧拋光墊 114‧‧‧ polishing pad
122‧‧‧偵測器 122‧‧‧Detector
124‧‧‧偵測電路 124‧‧‧Detection circuit
132‧‧‧單一偵測光束 132‧‧‧Single detection beam
134‧‧‧被反射的單一偵測光束 134‧‧‧A single detection beam that is reflected
202‧‧‧光發射單元 202‧‧‧Light emitting unit
204‧‧‧光感應單元 204‧‧‧Light sensing unit
212、214‧‧‧接點端 212, 214‧‧‧Contact end
222‧‧‧線圈組 222‧‧‧ coil group
224‧‧‧感應開關 224‧‧‧Sensor switch
226‧‧‧金屬核心 226‧‧‧Metal core
228‧‧‧線圈 228‧‧‧ coil
232、234‧‧‧訊號端 232, 234‧‧‧ signal end
242‧‧‧控制模組 242‧‧‧Control Module
Id‧‧‧偵測電流 Id‧‧‧Detecting current
圖1繪示為依照本發明之一實施例的一種機台的示意圖。 1 is a schematic diagram of a machine in accordance with an embodiment of the present invention.
圖2繪示為依照本發明之一實施例的一種機台之內部的電路方塊圖。 2 is a circuit block diagram of the interior of a machine in accordance with an embodiment of the present invention.
圖1繪示為依照本發明之一實施例的一種機台的示意圖。請參照圖1,本實施例所提供的機台100至少具有一平台102和一工作治具106。工作治具106,以承載一晶圓104,並且進行一預設製程。在一些實施例中,當上述的預設製程在進行時,工作治具106會高速的旋轉。在一些實施例中,平台102的材質顏色為黑色。 1 is a schematic diagram of a machine in accordance with an embodiment of the present invention. Referring to FIG. 1 , the machine 100 provided in this embodiment has at least one platform 102 and one working fixture 106 . The work fixture 106 is configured to carry a wafer 104 and perform a predetermined process. In some embodiments, the work jig 106 rotates at a high speed while the predetermined process described above is in progress. In some embodiments, the material color of the platform 102 is black.
另外,在一些實施例中,機台100可以是一研磨機台,例如是一化學研磨機台。因此,工作治具106就是一研磨治具,其包括保持器112和拋光墊114。保持器106用來接觸晶圓104的背面(簡稱”晶背”),並將其固定在拋光墊114上。相對地,拋光墊114則是接觸晶圓104的表面(即正面)。當預設製程(在本實施例即為研磨製程)進行時,拋光墊114會朝一方向(逆時針)高速旋轉,而保持器112則會帶動晶圓104朝與拋光墊114旋轉方向相同的方向旋轉。 Additionally, in some embodiments, the machine table 100 can be a grinder table, such as a chemical grinder table. Thus, the work fixture 106 is a grind fixture that includes a retainer 112 and a polishing pad 114. The holder 106 is used to contact the back side of the wafer 104 (referred to as "crystal back") and is attached to the polishing pad 114. In contrast, the polishing pad 114 is the surface (ie, the front side) that contacts the wafer 104. When the predetermined process (in this embodiment, the polishing process) is performed, the polishing pad 114 rotates at a high speed in one direction (counterclockwise), and the holder 112 drives the wafer 104 in the same direction as the polishing pad 114. Rotate.
機台100還包括一偵測器122,其耦接一偵測電路124。偵測器122可以發出一單一偵測光束132到平台102和工作治具106的交界處。特別的是,此單一偵測光束132的光強度最少需達到一光強度臨界值。在本實施例中,此光強度臨界值在白熱光源作為環境光源時為20000lux,而在太陽光作為環境光源時則為30000lux。 The machine 100 further includes a detector 122 coupled to a detection circuit 124. The detector 122 can emit a single detection beam 132 to the interface of the platform 102 and the work fixture 106. In particular, the light intensity of the single detection beam 132 needs to reach a minimum light intensity threshold. In this embodiment, the light intensity threshold is 20000 lux when the white heat source is used as the ambient light source, and 30000 lux when the sunlight is used as the ambient light source.
圖2繪示為依照本發明之一實施例的一種機台之內部的電路方塊圖。請合併參照圖1和圖2,在本實施例中, 偵測器122具有光發射單元202和光感應單元204。光發射單元202用來發射上述的單一偵測光束132,而光感應單元204則感應被平台102所反射的單一偵測光束134,並且依據被反射之單一偵測光束134的光強度,而輸出一偵測電流Id。由於單一偵測光束132的光強度可以達到光強度臨界值,因此當晶圓104在研磨製程時滑出工作治具106而遮斷反射之單一偵測光束134的行進路徑時,光感應單元204仍舊可以感應到被反射之單一偵測光束134的強度變化,即便晶背的顏色與平台102的顏色非常相近。此時,光感應單元204就會輸出超過一電流臨界值的偵測電流Id。 2 is a circuit block diagram of the interior of a machine in accordance with an embodiment of the present invention. Please refer to FIG. 1 and FIG. 2 together. In this embodiment, The detector 122 has a light emitting unit 202 and a light sensing unit 204. The light emitting unit 202 is configured to emit the single detecting beam 132, and the light sensing unit 204 senses the single detecting beam 134 reflected by the platform 102, and outputs according to the light intensity of the reflected single detecting beam 134. A detection current Id. Since the light intensity of the single detection beam 132 can reach the light intensity threshold, when the wafer 104 slides out of the work fixture 106 during the polishing process to block the travel path of the reflected single detection beam 134, the light sensing unit 204 The intensity variation of the reflected single detection beam 134 can still be sensed even if the color of the crystal back is very similar to the color of the platform 102. At this time, the light sensing unit 204 outputs a detection current Id exceeding a current threshold.
在本實施例中,偵測電路124可以利用一繼電器電路來實現。更詳細地來看,偵測電路124具有接點端212和214,並且分別耦接至機台100的訊號端232和234。另外,偵測電路124還包括一線圈組222和感應開關224。線圈組222包括金屬核心226和線圈228,其中線圈228纏繞在金屬核心226上,其第一端耦接光感應單元204,以接收偵測電流Id。相對地,線圈228的第二端接地。 In this embodiment, the detection circuit 124 can be implemented using a relay circuit. In more detail, the detection circuit 124 has contact terminals 212 and 214 and is coupled to the signal terminals 232 and 234 of the machine 100, respectively. In addition, the detection circuit 124 further includes a coil set 222 and an inductive switch 224. The coil assembly 222 includes a metal core 226 and a coil 228. The coil 228 is wound around the metal core 226, and the first end thereof is coupled to the light sensing unit 204 to receive the detection current Id. In contrast, the second end of the coil 228 is grounded.
當偵測電流Id流過線圈228時,線圈組222就會產生一磁場。若是偵測電流Id超過上述的電流臨界值時,線圈組222所產生的磁場也會超過一磁力臨界值。此時,感應開關224會因應感應到線圈組222所產生的磁場超過磁力臨界值而導通。若是感應開關224導通,則偵測電路124短路接點端212和214使得耦接訊號端232和234具有相同的電位。 When the detection current Id flows through the coil 228, the coil group 222 generates a magnetic field. If the detection current Id exceeds the above current threshold, the magnetic field generated by the coil assembly 222 will also exceed a magnetic threshold. At this time, the inductive switch 224 is turned on in response to the magnetic field generated by the coil group 222 being induced to exceed the magnetic force threshold. If the inductive switch 224 is turned on, the detection circuit 124 shorts the contact terminals 212 and 214 such that the coupled signal terminals 232 and 234 have the same potential.
另外,機台100還包括控制模組242,其會監測訊號端232和234的狀態。當控制模組242發現訊號端232 和234具有相同的電位時,代表可能有滑片的事件發生。因此,控制模組242就會停止工作治具106的作動,以避免晶圓104在研磨製程中毀損。 In addition, the machine 100 also includes a control module 242 that monitors the status of the signal terminals 232 and 234. When the control module 242 finds the signal end 232 When 234 has the same potential, it represents an event that may have a slider. Therefore, the control module 242 stops the operation of the working fixture 106 to prevent the wafer 104 from being damaged during the polishing process.
在一些實施例中,控制模組242在發現訊號端232和234具有相同的電位時,還會控制一警示訊息的發送,以通知機台100的操作人員偵測到異常事件。其中,警示訊息可以是發送警示音訊或點亮一警示燈。 In some embodiments, when the discovery signal terminals 232 and 234 have the same potential, the control module 242 also controls the transmission of an alert message to notify the operator of the machine 100 to detect an abnormal event. The warning message may be sending a warning message or lighting a warning light.
綜上所述,由於本發明所提供的偵測器所發出之單一偵測光束的光強度可以達到上述的光強度臨界值,因此當研磨製程進行時發生滑片的事件,本發明仍舊可以精確地偵測到此事件的發生,即便晶背的顏色與平台的材質顏色非常相近。如此一來,就可以提升晶圓的良率,並且降低晶圓損毀的成本。 In summary, since the light intensity of the single detection beam emitted by the detector provided by the present invention can reach the above-mentioned light intensity threshold, the present invention can still be accurately performed when the polishing process occurs. This event is detected, even if the color of the crystal back is very similar to the material color of the platform. As a result, wafer yield can be improved and the cost of wafer damage can be reduced.
100‧‧‧機台 100‧‧‧ machine
106‧‧‧工作治具 106‧‧‧Work fixtures
122‧‧‧偵測器 122‧‧‧Detector
124‧‧‧偵測電路 124‧‧‧Detection circuit
132‧‧‧單一偵測光束 132‧‧‧Single detection beam
134‧‧‧被反射的單一偵測光束 134‧‧‧A single detection beam that is reflected
202‧‧‧光發射單元 202‧‧‧Light emitting unit
204‧‧‧光感應單元 204‧‧‧Light sensing unit
212、214‧‧‧接點端 212, 214‧‧‧Contact end
222‧‧‧線圈組 222‧‧‧ coil group
224‧‧‧感應開關 224‧‧‧Sensor switch
226‧‧‧金屬核心 226‧‧‧Metal core
228‧‧‧線圈 228‧‧‧ coil
232、234‧‧‧訊號端 232, 234‧‧‧ signal end
242‧‧‧控制模組 242‧‧‧Control Module
Id‧‧‧偵測電流 Id‧‧‧Detecting current
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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TW531470B (en) * | 2001-08-27 | 2003-05-11 | Taiwan Semiconductor Mfg | Chemical polishing device |
TW200533468A (en) * | 2004-04-09 | 2005-10-16 | Grace Semiconductor Mfg Corp | Method for detecting wafer skidding in CMP apparatus |
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2013
- 2013-03-07 TW TW102108084A patent/TWI573664B/en active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW531470B (en) * | 2001-08-27 | 2003-05-11 | Taiwan Semiconductor Mfg | Chemical polishing device |
TW200533468A (en) * | 2004-04-09 | 2005-10-16 | Grace Semiconductor Mfg Corp | Method for detecting wafer skidding in CMP apparatus |
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