TWI571535B - Electrolyte for surface treatment of metal implant and method for surface treatment of metal implant using said electrolyte - Google Patents

Electrolyte for surface treatment of metal implant and method for surface treatment of metal implant using said electrolyte Download PDF

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TWI571535B
TWI571535B TW104141187A TW104141187A TWI571535B TW I571535 B TWI571535 B TW I571535B TW 104141187 A TW104141187 A TW 104141187A TW 104141187 A TW104141187 A TW 104141187A TW I571535 B TWI571535 B TW I571535B
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metal implant
aqueous solution
electrolyte
surface treatment
metal
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TW201720966A (en
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翁麗雯
曾俊傑
王躍鈞
伏和中
蘇子可
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財團法人金屬工業研究發展中心
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用於金屬植入物表面處理之電解液及利用該電解液進行表面處理之方法 Electrolyte for surface treatment of metal implants and method for surface treatment using the same

本發明係關於一種電解液,特別關於一種用於金屬植入物表面處理之電解液,以及利用該電解液進行金屬植入物表面處理之方法。 The present invention relates to an electrolyte, and more particularly to an electrolyte for surface treatment of a metal implant, and a method of surface treatment of a metal implant using the electrolyte.

金屬植入物係屬植入性醫材,廣泛應用於牙、骨或關節等人體硬組織,作為補強或固定之用。一般而言,必須藉由表面處理,於該金屬植入物之表面形成一多孔氧化膜層,以使該金屬植入物於植入人體後,能夠與人體硬組織鍵合,避免該金屬植入物脫落。 Metal implants are implantable materials that are widely used in human hard tissues such as teeth, bones or joints for reinforcement or fixation. Generally, a porous oxide film layer must be formed on the surface of the metal implant by surface treatment, so that the metal implant can be bonded to the human body after being implanted into the human body to avoid the metal. The implant is detached.

習知用於金屬植入物表面處理之電解液包含一含硫化合物、一含磷化合物、一氧化劑及水,且習知金屬植入物之表面處理方法係將一金屬植入物浸漬於該電解液中,並透過微弧放電之方式,於該金屬植入物之表面形成該多孔氧化膜層。上述用於金屬植入物表面處理之電解液及金屬植入物表面處理方法的一實施例已為中華民國公告第I435955號專利案所揭示。 The electrolytic solution for surface treatment of metal implants comprises a sulfur-containing compound, a phosphorus-containing compound, an oxidizing agent and water, and a surface treatment method of a conventional metal implant is to impregnate a metal implant into the metal implant. The porous oxide film layer is formed on the surface of the metal implant by means of micro-arc discharge in the electrolyte. An embodiment of the above-described electrolyte and metal implant surface treatment method for metal implant surface treatment is disclosed in the Republic of China Publication No. I435955.

惟,由於微弧放電過程中會產生例如氫氣等反應氣體,若該金屬植入物原本已具有微小孔洞或通道等立體形貌,反應氣體容易附著於該金屬植入物之表面,影響該多孔氧化膜層之生成。因此,不僅無法形成該多孔氧化膜層,更造成該金屬植入物之表面出現麻點,甚至發生氫脆現象。據此,習知用於金屬植入物表面處理之電解液及金屬植入物之表面處 理方法較不適用於具有立體形貌之金屬植入物。 However, since a reactive gas such as hydrogen gas is generated during the micro-arc discharge process, if the metal implant originally has a microscopic shape such as a minute hole or a channel, the reaction gas easily adheres to the surface of the metal implant, affecting the porous body. Formation of an oxide film layer. Therefore, not only the porous oxide film layer cannot be formed, but also the surface of the metal implant is pitting, and even hydrogen embrittlement occurs. Accordingly, conventionally used for the surface treatment of metal implants and the surface of metal implants The method is less suitable for metal implants having a three-dimensional appearance.

本發明提供一種用於金屬植入物表面處理之電解液,可以避免微弧放電所產生之反應氣體附著於一金屬植入物之表面者。 The invention provides an electrolyte for surface treatment of a metal implant, which can prevent the reaction gas generated by the micro-arc discharge from adhering to the surface of a metal implant.

本發明另提供一種金屬植入物之表面處理方法,可以避免微弧放電所產生之反應氣體附著於一金屬植入物之表面者。 The invention further provides a surface treatment method for a metal implant, which can prevent the reaction gas generated by the micro-arc discharge from adhering to the surface of a metal implant.

本發明提供一種用於金屬植入物表面處理之電解液,包含以重量百分比計10~30%之一含硫化合物水溶液、3~10%之一含磷化合物水溶液、0.5~2%之一氧化劑水溶液、0.5~5%之一界面活性劑水溶液,其餘以水補足;其中,該含硫化合物水溶液之濃度為0.1~3M,該含磷化合物水溶液之濃度為0.05~2M,該氧化劑水溶液之濃度為0.05~1M,且該界面活性劑水溶液之濃度為0.05~5M。藉此,能夠避免微弧放電反應所生成之反應氣體附著於該金屬植入物之表面而阻礙該多孔氧化膜層之生成,達成「使該金屬植入物之表面形成該多孔氧化膜層」功效。 The invention provides an electrolyte for surface treatment of a metal implant, comprising 10 to 30% by weight of an aqueous solution of a sulfur compound, 3 to 10% of an aqueous solution of a phosphorus compound, and 0.5 to 2% of an oxidant. An aqueous solution, 0.5 to 5% of an aqueous solution of a surfactant, and the remainder is supplemented with water; wherein the concentration of the aqueous solution of the sulfur-containing compound is 0.1 to 3 M, and the concentration of the aqueous solution of the phosphorus-containing compound is 0.05 to 2 M, and the concentration of the aqueous solution of the oxidizing agent is 0.05~1M, and the concentration of the surfactant aqueous solution is 0.05~5M. Thereby, it is possible to prevent the reaction gas generated by the micro-arc discharge reaction from adhering to the surface of the metal implant and hinder the formation of the porous oxide film layer, thereby achieving "forming the porous oxide film layer on the surface of the metal implant". efficacy.

本發明之用於金屬植入物表面處理之電解液,其中,該含硫化合物水溶液為硫酸水溶液或過硫酸鉀水溶液;該含磷化合物水溶液為磷酸水溶液或次磷酸鈉水溶液;該氧化劑水溶液為過氧化氫水溶液或臭氧水溶液;且該界面活性劑水溶液為單烷基磷酸酯(monoalkyl phosphate)、麩醯胺酸(glutamine)、N-醯基麩醯胺酸鉀(potassium N-acyl glutamine)、烷基聚葡萄糖(alkyl polyglucoside)或聚乙二醇(polyethylene glycol)之水溶液。藉此,能夠達成「使該金屬植入物具有高生物相容性」功效。 The electrolyte for surface treatment of a metal implant according to the present invention, wherein the aqueous solution of the sulfur-containing compound is an aqueous solution of sulfuric acid or an aqueous solution of potassium persulfate; and the aqueous solution of the phosphorus-containing compound is an aqueous solution of phosphoric acid or an aqueous solution of sodium hypophosphite; An aqueous solution of hydrogen peroxide or an aqueous solution of ozone; and the aqueous solution of the surfactant is a monoalkyl phosphate, a glutamine, a potassium N-acyl glutamine, an alkane An aqueous solution of an alkyl polyglucoside or a polyethylene glycol. Thereby, the effect of "making the metal implant highly biocompatible" can be achieved.

本發明另提供一種金屬植入物之表面處理方法,包含:以一溶劑震洗一金屬植入物,直至該金屬植入物之表面污物為之去除;將去除污物之金屬植入物置於一陽極,並浸漬於該電解液之中,搭配一陰極,且通入150~500V之反應電壓,並調整反應溫度為0~-10℃,使得該金屬植 入物在該電解液中產生微弧放電反應,直至該金屬植入物表面形成一多孔氧化膜層。藉此,能夠達成「提升金該金屬植入物與人體硬組織的鍵合強度」功效。 The invention further provides a surface treatment method for a metal implant, comprising: shaking a metal implant with a solvent until the surface of the metal implant is removed; and removing the metal implant of the dirt In an anode, and immersed in the electrolyte, with a cathode, and a reaction voltage of 150 ~ 500V, and adjust the reaction temperature of 0 ~ -10 ° C, so that the metal plant The input material generates a micro-arc discharge reaction in the electrolyte until a porous oxide film layer is formed on the surface of the metal implant. Thereby, the effect of "increasing the bonding strength of the metal implant to the hard tissue of the human body" can be achieved.

本發明之金屬植入物之表面處理方法,其中,該多孔氧化膜層之厚度為0.5~30μm,該多孔氧化膜層之孔洞孔徑為0.5~15μm,該多孔氧化膜層之孔洞深度為0.5~3μm。藉此,能夠達成「提升該金屬植入物與人體硬組織之鍵合強度」功效。 The surface treatment method of the metal implant of the present invention, wherein the porous oxide film layer has a thickness of 0.5 to 30 μm, the porous oxide film layer has a pore diameter of 0.5 to 15 μm, and the porous oxide film layer has a pore depth of 0.5 to 0.5 3 μm. Thereby, the effect of "increasing the bonding strength between the metal implant and the hard tissue of the human body" can be achieved.

本發明之金屬植入物之表面處理方法,其中,該金屬植入物可以在該電解液中產生微弧放電反應10~60分鐘,以使該金屬植入物表面形成該多孔氧化膜層。藉此,能夠達成「提升該金屬植入物與人體硬組織之鍵合強度」功效。 In the surface treatment method of the metal implant of the present invention, the metal implant can generate a micro-arc discharge reaction in the electrolyte for 10 to 60 minutes to form the porous oxide film layer on the surface of the metal implant. Thereby, the effect of "increasing the bonding strength between the metal implant and the hard tissue of the human body" can be achieved.

本發明之金屬植入物之表面處理方法,其中,該金屬植入物表面形成該多孔氧化膜層之後,另將具有該多孔膜層之金屬植入物浸漬於溫度為15~30℃且pH 5.0~7.0之弱酸溶液中10~30分鐘。藉此,能夠達成「去除該金屬植入物表面之殘留電解液及雜質」功效。 In the surface treatment method of the metal implant of the present invention, after the porous oxide film layer is formed on the surface of the metal implant, the metal implant having the porous film layer is further immersed at a temperature of 15 to 30 ° C and a pH. 5.0~7.0 weak acid solution for 10~30 minutes. Thereby, the effect of "removing residual electrolyte and impurities on the surface of the metal implant" can be achieved.

本發明之金屬植入物之表面處理方法,其中,該弱酸溶液可以為草酸溶液、檸檬酸溶液、乳酸溶液、甲酸溶液或碳酸溶液。藉此,可以避免該金屬植入物表面殘留之該弱酸溶液對人體造成危害。 The surface treatment method of the metal implant of the present invention, wherein the weak acid solution may be an oxalic acid solution, a citric acid solution, a lactic acid solution, a formic acid solution or a carbonic acid solution. Thereby, the weak acid solution remaining on the surface of the metal implant can be avoided to cause harm to the human body.

本發明用於金屬植入物表面處理之電解液,藉由該電解液中包含適當濃度之該含硫化合物、該含磷化合物、該氧化劑及該界面活性劑,能夠避免微弧放電反應所生成之反應氣體附著於該金屬植入物之表面而阻礙該多孔氧化膜層之生成,達成「使該金屬植入物之表面形成該多孔氧化膜層」功效。 The electrolyte for surface treatment of a metal implant can prevent micro-arc discharge reaction from being generated by containing an appropriate concentration of the sulfur-containing compound, the phosphorus-containing compound, the oxidizing agent and the surfactant in the electrolyte. The reaction gas adheres to the surface of the metal implant to hinder the formation of the porous oxide film layer, and the effect of "forming the porous oxide film layer on the surface of the metal implant" is achieved.

本發明金屬植入物表面處理之方法,藉由使用該電解液,配合150~500V之反應電壓及0~-10℃之反應溫度,能夠於該金屬植入物之 表面生成具有火山口形態之該多孔氧化膜層,以增加該金屬植入物之表面粗糙度,達成「提升金該金屬植入物與人體硬組織的鍵合強度」功效。 The method for surface treatment of the metal implant of the present invention can be used for the metal implant by using the electrolyte and a reaction voltage of 150 to 500 V and a reaction temperature of 0 to -10 ° C. The porous oxide film layer having a crater shape is formed on the surface to increase the surface roughness of the metal implant, thereby achieving the effect of "increasing the bonding strength of the metal implant to the hard tissue of the human body".

本發明金屬植入物表面處理之方法,其操控簡易,而能節省表面處理所需耗費之時間成本,達成「提升金屬植入物表面處理之效率」功效。 The method for surface treatment of the metal implant of the invention has the advantages of simple operation, saving time and cost for surface treatment, and achieving the effect of "improving the efficiency of metal implant surface treatment".

第1圖:為未經表面處理之一金屬植入物的SEM影像。 Figure 1: SEM image of a metal implant without surface treatment.

第2a圖:為第A1組之該金屬植入物的SEM影像(一)。 Figure 2a: SEM image of the metal implant of group A1 (1).

第2b圖:為第A1組之該金屬植入物的SEM影像(二)。 Figure 2b: SEM image of the metal implant of Group A1 (2).

第3a圖:為第A2組之該金屬植入物的SEM影像(一)。 Figure 3a: SEM image of the metal implant of group A2 (1).

第3b圖:為第A2組之該金屬植入物的SEM影像(二)。 Figure 3b: SEM image of the metal implant of Group A2 (2).

為讓本發明之上述及其他目的、特徵及優點能更明顯易懂,下文特舉本發明之較佳實施例,並配合所附圖式,作詳細說明如下: The above and other objects, features and advantages of the present invention will become more <RTIgt;

本發明所屬之金屬植入物,係以金屬或合金製成,可以用於人體之牙齒、骨骼或關節等之重建、修補。類似地,該金屬植入物亦可以用於其他動物體中。該金屬植入物係能夠以鈦金屬、鈦合金或含鈦元素之金屬材料製成,其生物相容性佳,較適合應用於人體。此外,該金屬植入物可以先經由3D列印等方式製成,且具有微小孔洞、通道等立體形貌,以利於與人體硬組織形成鍵合。 The metal implant to which the present invention pertains is made of metal or alloy and can be used for reconstruction and repair of teeth, bones or joints of the human body. Similarly, the metal implant can also be used in other animal bodies. The metal implant can be made of titanium metal, titanium alloy or a metal material containing titanium element, and has good biocompatibility and is suitable for use in human body. In addition, the metal implant can be made by 3D printing or the like, and has a three-dimensional appearance such as micro holes and channels to facilitate bonding with hard tissues of the human body.

本發明提供一種電解液,包含一含硫化合物水溶液、一含磷化合物水溶液、一氧化劑水溶液、一界面活性劑水溶液,且該電解液係用於金屬植入物之表面處理。 The invention provides an electrolyte comprising an aqueous solution of a sulfur-containing compound, an aqueous solution of a phosphorus-containing compound, an aqueous solution of an oxidizing agent, an aqueous solution of a surfactant, and the electrolyte is used for surface treatment of a metal implant.

詳言之,該電解液包含以重量百分比計10~30%之該含硫化 合物水溶液、3~10%之該含磷化合物水溶液及0.5~2%之該氧化劑水溶液。其中,該含硫化合物水溶液包含一含硫化合物,濃度為0.1~3M,且該含硫化合物可以為硫酸、過硫酸鉀等;該含磷化合物水溶液包含一含磷化合物,濃度為0.05~2M,且該含磷化合物可以為磷酸、次磷酸鈉等;該氧化劑水溶液包含一氧化劑,濃度為0.05~1M,且該氧化劑可以為過氧化氫、臭氧等,惟本發明不以此為限。 In detail, the electrolyte contains 10 to 30% by weight of the vulcanization. An aqueous solution of the compound, 3 to 10% of the aqueous solution of the phosphorus-containing compound, and 0.5 to 2% of the aqueous solution of the oxidizing agent. Wherein, the aqueous solution of the sulfur compound comprises a sulfur-containing compound having a concentration of 0.1 to 3 M, and the sulfur-containing compound may be sulfuric acid, potassium persulfate or the like; and the aqueous solution of the phosphorus-containing compound comprises a phosphorus-containing compound at a concentration of 0.05 to 2 M. The phosphorus-containing compound may be phosphoric acid, sodium hypophosphite or the like; the oxidizing agent aqueous solution contains an oxidizing agent at a concentration of 0.05 to 1 M, and the oxidizing agent may be hydrogen peroxide, ozone or the like, but the invention is not limited thereto.

此外,該電解液更包含以重量百分比計0.5~5%之該界面活性劑水溶液,且該界面活性劑水溶液之濃度為0.05~5M,並可以選用任何界面活性劑水溶液,較佳選擇為對人體無毒者。例如,該界面活性劑水溶液可以為單烷基磷酸酯(monoalkyl phosphate)、麩醯胺酸(glutamine)、N-醯基麩醯胺酸鉀(potassium N-acyl glutamine)、烷基聚葡萄糖(alkyl polyglucoside)或聚乙二醇(polyethylene glycol,簡稱PEG),且可以選擇為PEG-200、PEG-400或PEG-3350等。 In addition, the electrolyte further comprises 0.5 to 5% by weight of the surfactant aqueous solution, and the concentration of the surfactant aqueous solution is 0.05-5 M, and any surfactant active solution may be selected, preferably selected for the human body. Non-toxic. For example, the surfactant aqueous solution may be monoalkyl phosphate, glutamine, potassium N-acyl glutamine, alkyl polydextrose (alkyl Polyglucoside) or polyethylene glycol (PEG), and may be selected from PEG-200, PEG-400 or PEG-3350.

於本實施例中,該含硫化合物水溶液係選擇為硫酸水溶液,且濃度為2M;該含磷化合物水溶液係選擇為磷酸水溶液,且濃度1M;該氧化劑水溶液係選擇為過氧化氫水溶液,且濃度為0.1M;該界面活性劑水溶液係選擇PEG-200之水溶液,且濃度為2.5M。依照上述濃度,配製完成該含硫化合物水溶液、含磷化合物水溶液、該氧化劑水溶液及該介面活性劑水溶液後,續取以重量百分比計10~30%之該含硫化合物水溶液、3~10%之該含磷化合物水溶液、0.5~2%之該氧化劑水溶液及0.5~5%之該界面活性劑水溶液,其餘以水補足,以配製為該電解液。 In the present embodiment, the aqueous solution of the sulfur-containing compound is selected to be an aqueous solution of sulfuric acid, and the concentration is 2M; the aqueous solution of the phosphorus-containing compound is selected as an aqueous solution of phosphoric acid, and the concentration is 1M; the aqueous solution of the oxidizing agent is selected as an aqueous solution of hydrogen peroxide, and the concentration is selected. It is 0.1 M; the aqueous surfactant solution is an aqueous solution of PEG-200 selected at a concentration of 2.5 M. According to the above concentration, after the aqueous solution of the sulfur-containing compound, the aqueous solution of the phosphorus-containing compound, the aqueous solution of the oxidizing agent and the aqueous solution of the surfactant are prepared, 10 to 30% by weight of the aqueous solution of the sulfur-containing compound, 3 to 10% by weight is continuously obtained. The aqueous solution of the phosphorus-containing compound, 0.5 to 2% of the aqueous solution of the oxidizing agent, and 0.5 to 5% of the aqueous solution of the surfactant are mixed with water to prepare the electrolytic solution.

藉由該電解液之組成及配比,當將上述金屬植入物浸漬於該電解液中,並通入適當電壓作用時,遂可以即刻在該金屬植入物表面生成一層氧化膜,並透過解離之帶電離子反覆予以撃穿,而產生微弧放電現象,以使弧點或火花游動於金屬植入物表面,直至金屬植入物表面因微弧放電 的高溫熔化,而生成一多孔氧化膜層。並且,由於該電解液中包含適當濃度之該界面活性劑,配合適當濃度之該含硫化合物、該含磷化合物及該氧化劑,即使於微弧放電反應時產生反應氣體,亦能夠迅速自該金屬植入物之表面逸散,而不會附著於該金屬植入物之表面,進而可以避免反應氣體影響該多孔氧化膜層之生成。 By immersing the metal implant in the electrolyte and applying an appropriate voltage through the composition and ratio of the electrolyte, the crucible can immediately form an oxide film on the surface of the metal implant and pass through The dissociated charged ions repeatedly penetrate through, and micro-arc discharge phenomenon occurs, so that the arc or spark swims on the surface of the metal implant until the surface of the metal implant is discharged by micro-arc The high temperature melts to form a porous oxide film layer. Further, since the electrolyte contains an appropriate concentration of the surfactant, the sulfur-containing compound, the phosphorus-containing compound and the oxidizing agent are appropriately mixed, and even if a reaction gas is generated during the micro-arc discharge reaction, the metal can be quickly obtained from the metal. The surface of the implant is dissipated and does not adhere to the surface of the metal implant, thereby preventing the reaction gas from affecting the formation of the porous oxide film layer.

因此,該含硫化合物所包含之硫成分、該含磷化合物所包含之磷成份及該氧化劑水溶液能夠與該金屬植入物表面的金屬粒子產生電化學及等離子反應,而隨之在該金屬植入物表面生成具有陶瓷性質之該多孔氧化膜層。是以,當該金屬植入物植入人體硬組織時,人體硬組織之細胞可緊密附著於該多孔氧化膜之上,以進一步提升該金屬植入物之生物活性,且可輕易與人體硬組織穩固鍵合。 Therefore, the sulfur component contained in the sulfur-containing compound, the phosphorus component contained in the phosphorus-containing compound, and the aqueous solution of the oxidant can electrochemically and plasmaly react with the metal particles on the surface of the metal implant, and subsequently the metal plant The porous oxide film layer having a ceramic property is formed on the surface of the input. Therefore, when the metal implant is implanted into the hard tissue of the human body, the cells of the hard tissue of the human body can be closely attached to the porous oxide film to further enhance the biological activity of the metal implant, and can be easily hardened with the human body. The tissue is firmly bonded.

本發明另提供一種金屬植入物的表面處理方法,係以上述電解液對該金屬植入物進行表面處理,包含以一溶劑震洗該金屬植入物,續將該金屬植入物浸漬於該電解液中,通以電壓,以形成該多孔氧化膜層。 The invention further provides a surface treatment method for a metal implant, wherein the metal implant is surface-treated with the electrolyte solution, comprising: shaking the metal implant with a solvent, and continuously immersing the metal implant in the metal implant; In the electrolyte, a voltage is applied to form the porous oxide film layer.

更詳言之,該溶劑可以為超純水、丙酮或酒精等,本發明不加以限制。藉由使用該溶劑震洗該金屬植入物,可以去除該金屬植入物表面之污物,例如加工時殘留之加工油或金屬雜質等。於本實施例中,係以超純水、丙酮、超純水、酒精之順序,依序震洗該金屬植入物數次,以徹底洗去該金屬植入物表面之污物,避免污物影響後續反應之進行。 More specifically, the solvent may be ultrapure water, acetone or alcohol, etc., and the invention is not limited. By shaking the metal implant with the solvent, dirt on the surface of the metal implant, such as processing oil or metal impurities remaining during processing, can be removed. In the present embodiment, the metal implant is sequentially shaken in the order of ultrapure water, acetone, ultrapure water, and alcohol to thoroughly wash away the dirt on the surface of the metal implant to avoid contamination. The substance affects the progress of the subsequent reaction.

而後,將該金屬植入物置於一陽極,並浸漬於上述電解液之中,搭配一陰極,通入150~500V之反應電壓,並調整反應溫度為0~-10℃,使得該金屬植入物在該電解液中產生微弧放電反應,直至該金屬植入物表面形成該多孔氧化膜層。其中,該陰極可以是白金、石墨或鈦電極。 Then, the metal implant is placed on an anode, and immersed in the electrolyte, and a cathode is used to pass a reaction voltage of 150 to 500 V, and the reaction temperature is adjusted to 0 to -10 ° C to make the metal implant. The substance generates a micro-arc discharge reaction in the electrolyte until the porous oxide film layer is formed on the surface of the metal implant. Wherein, the cathode may be a platinum, graphite or titanium electrode.

詳言之,當該金屬植入物浸漬於該電解液之中,並以150~500V之反應電壓通入適當電流時,該金屬植入物表面遂可立即生成該氧化 膜;並且,自該電解液中游離之帶電離子,便會在電壓超過某一臨界值後,順勢撃穿該氧化膜較為薄弱之區域,進而產生微弧放電現象,以使該金屬植入物表面聚集游動之弧點或火花。 In detail, when the metal implant is immersed in the electrolyte and an appropriate current is applied at a reaction voltage of 150 to 500 V, the surface of the metal implant can immediately form the oxidation. Membrane; and the charged ion that is free from the electrolyte will penetrate the weaker region of the oxide film after the voltage exceeds a certain critical value, thereby generating a micro-arc discharge phenomenon, so that the metal implant The surface gathers arcs or sparks that swim.

於此同時,該金屬植入物之表面會因上述反應而產生氫氣等反應氣體,若無法排除反應氣體,將阻礙後續之帶電離子靠近該金屬植入物之表面,而影響表面處理之效果。於本案中,由於所使用之該電解液的表面張力較低,反應氣體能夠迅速離開該金屬植入物之表面,而不會影響該多孔氧化膜層之生成。此外,藉由於低溫下進行反應,能夠進一步加快反應氣體離開該金屬植入物之表面的速度。 At the same time, the surface of the metal implant generates a reaction gas such as hydrogen due to the above reaction. If the reaction gas cannot be removed, the subsequent charged ions are prevented from approaching the surface of the metal implant, thereby affecting the surface treatment effect. In the present case, since the surface tension of the electrolyte used is low, the reaction gas can quickly leave the surface of the metal implant without affecting the formation of the porous oxide film layer. Further, the speed at which the reaction gas leaves the surface of the metal implant can be further accelerated by performing the reaction at a low temperature.

如此一來,上述微弧放電現象能夠反覆發生,伴隨弧點放電瞬間的高溫,迫使該金屬植入物與該電解液相互作用,並在該金屬植入物表面發生熔化,隨之形成有如火山口型態之孔洞,且經10~60分鐘的電化學與等離子反應作用後,便會於該金屬植入物表面生成如奈米網路狀的該多孔氧化膜層。 In this way, the micro-arc discharge phenomenon can occur repeatedly, and the high temperature of the arc spot discharge forces the metal implant to interact with the electrolyte and melt on the surface of the metal implant, thereby forming a volcano. The pores of the mouth shape, and after 10 to 60 minutes of electrochemical and plasma reaction, the porous oxide film layer such as a nano network is formed on the surface of the metal implant.

本案金屬植入物之表面處理方法,於形成該多孔氧化膜層之後,另能夠清洗具有該多孔氧化膜層之該金屬植入物,例如將該金屬植入物浸漬於溫度為15~30℃及pH 5.0~7.0之弱酸溶液中10~30分鐘,以去除表面所殘留之電解液及雜質等。該弱酸溶液較佳選擇為對人體無毒者,例如草酸溶液、檸檬酸溶液、乳酸溶液、甲酸溶液或碳酸溶液等,如此一來,即使仍有少量之該弱酸溶液殘留於該金屬植入物之表面,亦不至於對人體造成危害。 In the surface treatment method of the metal implant of the present invention, after the porous oxide film layer is formed, the metal implant having the porous oxide film layer can be cleaned, for example, the metal implant is immersed at a temperature of 15 to 30 ° C. And the weak acid solution of pH 5.0~7.0 for 10~30 minutes to remove the electrolyte and impurities remaining on the surface. The weak acid solution is preferably selected to be non-toxic to the human body, such as oxalic acid solution, citric acid solution, lactic acid solution, formic acid solution or carbonic acid solution, etc., so that even a small amount of the weak acid solution remains in the metal implant. The surface is not harmful to the human body.

此外,本案較佳使該多孔氧化膜層之厚度為0.5~30μm,該多孔氧化膜層之孔洞孔徑為0.5~15μm,且該多孔氧化膜層之孔洞深度為0.5~3μm,以使該金屬植入物藉由該多孔氧化膜層,與人體硬組織形成更加穩固之鍵合,且進一步提升人體細胞吸附於該金屬植入物之效果。 In addition, in the present invention, the thickness of the porous oxide film layer is preferably 0.5 to 30 μm, the pore diameter of the porous oxide film layer is 0.5 to 15 μm, and the pore depth of the porous oxide film layer is 0.5 to 3 μm, so that the metal implant The porous oxide film layer forms a more stable bond with the hard tissue of the human body, and further enhances the effect of human cells adsorbing on the metal implant.

利用上述電解液進行金屬植入物表面處理之方法,在相對應之反應電壓、溫度,以及電解液與金屬植入物的相互作用之下,能夠避免反應氣體影響該多孔氧化膜層之生成。因此,本案之表面處理方法能夠於該金屬植入物表面生成該多孔氧化膜層,以更加穩固該金屬植入物與人體硬組織的鍵合效果,使得細胞基質中的黏著蛋白更加趨近該多孔氧化膜層,進而引導細胞進行附著,達到加速硬組織整合之效果。並且,該金屬植入物表面處理之方法更是透過簡易操控而省去表面處理所需耗費的時間及成本,以相對達到提升金屬植入物表面處理效率之功效,進一步能為業界量產所廣泛使用。 The method of performing surface treatment of the metal implant by using the above electrolyte solution can prevent the reaction gas from affecting the formation of the porous oxide film layer under the reaction voltage, temperature, and interaction of the electrolyte and the metal implant. Therefore, the surface treatment method of the present invention can form the porous oxide film layer on the surface of the metal implant to further stabilize the bonding effect between the metal implant and the human hard tissue, so that the adhesive protein in the cell matrix is closer to the surface. The porous oxide film layer guides the cells to adhere to the effect of accelerating hard tissue integration. Moreover, the method for surface treatment of the metal implant further eliminates the time and cost required for surface treatment by simple manipulation, so as to achieve the effect of improving the surface treatment efficiency of the metal implant, and further capable of mass production in the industry. widely used.

為了證實經本發明處理後之金屬植入物確實可形成火山口型態之該多孔氧化膜層,遂進行下述實驗: In order to confirm that the metal implant treated by the present invention can form the porous oxide film layer of the crater type, the following experiment is carried out:

於本實驗中,該金屬植入物係選擇為3D列印之鈦材,且具有微小孔洞。於反應進行前,以SEM檢視該金屬植入物之孔洞的內部形貌,如第1圖所示。參照上述步驟震洗該金屬植入物,續分別以未添加該界面活性劑水溶液(第A1組)及添加有該界面活性劑水溶液(第A2組)之電解液進行表面處理以生成該多孔氧化膜層。續以該弱酸溶液清洗後,以SEM檢視該金屬植入物之孔洞內部。 In this experiment, the metal implant was selected as a 3D printed titanium material with tiny holes. The internal morphology of the pores of the metal implant was examined by SEM before the reaction was carried out, as shown in Fig. 1. The metal implant is shaken according to the above steps, and the surface treatment is performed to form the porous oxide by an electrolyte solution in which the surfactant solution (Group A1) is not added and the surfactant solution (Group A2) is added. Membrane layer. After washing with the weak acid solution, the inside of the pore of the metal implant was examined by SEM.

本實驗係以硫酸水溶液、磷酸水溶液、過氧化氫水溶液及PEG-200水溶液分別作為該含硫化合物水溶液、該含磷化合物水溶液、該過氧化劑水溶液及該界面活性劑水溶液,並以草酸溶液作為該弱酸溶液。其中,第A1、A2組各成分之濃度如下第1表所示,並以如上所述之重量百分比混合,以製得第A1、A2組之電解液。第A1組之SEM影像為第2a、2b圖;第A2組之SEM影像為第3a、3b圖。 In the present experiment, an aqueous solution of sulfuric acid, an aqueous solution of hydrogen peroxide, and an aqueous solution of PEG-200 are used as the aqueous solution of the sulfur-containing compound, the aqueous solution of the phosphorus-containing compound, the aqueous solution of the peroxidizing agent, and the aqueous solution of the surfactant, and the oxalic acid solution is used as the solution. Weak acid solution. Here, the concentrations of the components of the groups A1 and A2 are as shown in the first table, and are mixed at a weight percentage as described above to obtain an electrolyte solution of the groups A1 and A2. The SEM images of Group A1 are Figures 2a and 2b; the SEM images of Group A2 are Figures 3a and 3b.

請參照第2a、2b圖,未添加該界面活性劑水溶液時,由於反應氣體容易附著該金屬植入物之表面,進而阻礙該電解液進入該金屬植入物之孔洞內,而無法於孔洞內生成該多孔氧化膜層,使該金屬植入物之表面仍維持反應前之形貌。反之,參照第3a、3b圖,於該電解液中添加有該界面活性劑水溶液時,由於界面活性劑可以幫助反應氣體脫離該金屬植入物之表面,而不影響該多孔氧化膜層之形成。因此,能夠形成具有火山口型態之該多孔氧化膜層。 Referring to Figures 2a and 2b, when the surfactant solution is not added, the reaction gas easily adheres to the surface of the metal implant, thereby preventing the electrolyte from entering the pores of the metal implant, and is not in the hole. The porous oxide film layer is formed such that the surface of the metal implant maintains the morphology before the reaction. On the contrary, referring to the figures 3a and 3b, when the aqueous solution of the surfactant is added to the electrolyte, the surfactant can help the reaction gas to detach from the surface of the metal implant without affecting the formation of the porous oxide film layer. . Therefore, the porous oxide film layer having a crater pattern can be formed.

綜合上述,本發明用於金屬植入物表面處理之電解液,藉由包含適當濃度之該含硫化合物、該含磷化合物、該氧化劑及該界面活性劑,能夠避免微弧放電反應所生成之反應氣體附著於該金屬植入物之表面而阻礙該多孔氧化膜層之生成,達成「使該金屬植入物之表面形成該多孔氧化膜層」功效。 In summary, the electrolyte for surface treatment of a metal implant of the present invention can avoid the formation of a micro-arc discharge reaction by including an appropriate concentration of the sulfur-containing compound, the phosphorus-containing compound, the oxidizing agent and the surfactant. The reaction gas adheres to the surface of the metal implant to hinder the formation of the porous oxide film layer, and the effect of "forming the porous oxide film layer on the surface of the metal implant" is achieved.

另,本發明用於金屬植入物表面處理之電解液,藉由選用硫酸或過硫酸鉀作為該含硫化合物,選用磷酸或次磷酸鈉作為該含磷化合物,選用過氧化氫或臭氧作為該氧化劑,選用單烷基磷酸酯、麩醯胺酸、N-醯基麩醯胺酸鉀、烷基聚葡萄糖或聚乙二醇作為該界面活性劑,由於各成分對生物體之危害性低,而能達成「使該金屬植入物具有高生物相容性」功效。 In addition, the electrolyte for surface treatment of a metal implant of the present invention uses sulfuric acid or potassium persulfate as the sulfur-containing compound, and phosphoric acid or sodium hypophosphite is selected as the phosphorus-containing compound, and hydrogen peroxide or ozone is selected as the As the oxidizing agent, monoalkyl phosphate, glutamic acid, potassium N-decyl glutamate, alkyl polydextrose or polyethylene glycol is used as the surfactant, and since each component is harmful to living organisms, It can achieve the effect of "making the metal implant highly biocompatible".

再者,本發明金屬植入物表面處理之方法,藉由使用該電解液,配合150~500V之反應電壓及0~-10℃之反應溫度,能夠於該金屬植入物之表面生成具有火山口形態之該多孔氧化膜層,以增加該金屬植入物之表面粗糙度,達成「提升金該金屬植入物與人體硬組織的鍵合強度」功效。 Furthermore, the method for surface treatment of the metal implant of the present invention can form a volcano on the surface of the metal implant by using the electrolyte and a reaction voltage of 150 to 500 V and a reaction temperature of 0 to -10 ° C. The porous oxide film layer in the form of a mouth is used to increase the surface roughness of the metal implant, thereby achieving the effect of "increasing the bonding strength of the metal implant to the hard tissue of the human body".

此外,本發明金屬植入物表面處理之方法,其操控簡易,而能節省表面處理所需耗費之時間成本,達成「提升金屬植入物表面處理之效率」功效。 In addition, the method for surface treatment of the metal implant of the present invention is simple in operation, and can save time and cost for surface treatment, and achieve the effect of "improving the efficiency of metal implant surface treatment".

雖然本發明已利用上述較佳實施例揭示,然其並非用以限定本發明,任何熟習此技藝者在不脫離本發明之精神和範圍之內,相對上述實施例進行各種更動與修改仍屬本發明所保護之技術範疇,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 While the invention has been described in connection with the preferred embodiments described above, it is not intended to limit the scope of the invention. The technical scope of the invention is protected, and therefore the scope of the invention is defined by the scope of the appended claims.

Claims (6)

一種用於金屬植入物表面處理之電解液,包含以重量百分比計10~30%之一含硫化合物水溶液、3~10%之一含磷化合物水溶液、0.5~2%之一氧化劑水溶液、0.5~5%之一界面活性劑水溶液,其餘以水補足;其中,該含硫化合物水溶液之濃度為0.1~3M,該含磷化合物水溶液之濃度為0.05~2M,該氧化劑水溶液之濃度為0.05~1M,且該界面活性劑水溶液之濃度為0.05~5M。 An electrolyte for surface treatment of a metal implant, comprising 10 to 30% by weight of an aqueous solution of a sulfur compound, 3 to 10% of an aqueous solution of a phosphorus compound, 0.5 to 2% of an aqueous solution of an oxidizing agent, 0.5 ~5% of an aqueous solution of surfactant, and the rest is supplemented with water; wherein the concentration of the aqueous solution of the sulfur compound is 0.1 to 3 M, the concentration of the aqueous solution of the phosphorus compound is 0.05 to 2 M, and the concentration of the aqueous solution of the oxidizing agent is 0.05 to 1 M. And the concentration of the surfactant aqueous solution is 0.05~5M. 如申請專利範圍第1項所述之用於金屬植入物表面處理之電解液,其中,該含硫化合物水溶液為硫酸水溶液或過硫酸鉀水溶液。 The electrolyte for surface treatment of a metal implant according to claim 1, wherein the aqueous solution of the sulfur compound is an aqueous solution of sulfuric acid or an aqueous solution of potassium persulfate. 如申請專利範圍第1項所述之用於金屬植入物表面處理之電解液,其中,該含磷化合物水溶液為磷酸水溶液或次磷酸鈉水溶液。 The electrolyte for surface treatment of a metal implant according to claim 1, wherein the aqueous solution of the phosphorus-containing compound is an aqueous solution of phosphoric acid or an aqueous solution of sodium hypophosphite. 如申請專利範圍第1項所述之用於金屬植入物表面處理之電解液,其中,該氧化劑水溶液為過氧化氫水溶液或臭氧水溶液。 The electrolyte for surface treatment of a metal implant according to claim 1, wherein the oxidizing agent aqueous solution is an aqueous hydrogen peroxide solution or an aqueous ozone solution. 如申請專利範圍第1項所述之用於金屬植入物表面處理之電解液,其中,該界面活性劑水溶液為單烷基磷酸酯(monoalkyl phosphate)、麩醯胺酸(glutamine)、聚乙二醇(polyethylene glycol)、N-醯基麩醯胺酸鉀(potassium N-acyl glutamine)或烷基聚葡萄糖(alkyl polyglucoside)之水溶液。 The electrolyte for surface treatment of a metal implant according to claim 1, wherein the aqueous solution of the surfactant is monoalkyl phosphate, glutamine, polyethylene. An aqueous solution of polyethylene glycol, potassium N-acyl glutamine or alkyl polyglucoside. 一種利用如申請專利範圍第1~5項中任一項所述電解液進行金屬植入物表面處理之方法,包含:以一溶劑震洗一金屬植入物,直至該金屬植入物之表面污物為之去除;將去除污物之金屬植入物置於一陽極,並浸漬於該電解液之中,搭配一陰極,且通入150~500V之反應電壓,並調整反應溫度為0~-10℃,使得該金屬植入物在該電解液中產生微弧放電反應,直至該金屬植入物表面形成一多孔氧化膜層。 A method for surface treatment of a metal implant using an electrolyte according to any one of claims 1 to 5, comprising: shaking a metal implant with a solvent until the surface of the metal implant The dirt is removed; the metal implant for removing the dirt is placed on an anode, and immersed in the electrolyte, with a cathode, and a reaction voltage of 150 to 500 V is passed, and the reaction temperature is adjusted to 0~- At 10 ° C, the metal implant generates a micro-arc discharge reaction in the electrolyte until a porous oxide film layer is formed on the surface of the metal implant.
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Citations (2)

* Cited by examiner, † Cited by third party
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CN1772967A (en) * 2005-11-02 2006-05-17 哈尔滨工业大学 Use of 12 sodium alkyl sulfonate 12 alkylbenzene sodium alkyl sulfonate, diphenylamine-4-sodium alkyl sulfonate in surface micro-arc oxidation technology
TW201402871A (en) * 2012-07-06 2014-01-16 Metal Ind Res & Dev Ct An electrolyte for processing the surface of a metal implant and its surface treatment method by using the electrolyte

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1772967A (en) * 2005-11-02 2006-05-17 哈尔滨工业大学 Use of 12 sodium alkyl sulfonate 12 alkylbenzene sodium alkyl sulfonate, diphenylamine-4-sodium alkyl sulfonate in surface micro-arc oxidation technology
TW201402871A (en) * 2012-07-06 2014-01-16 Metal Ind Res & Dev Ct An electrolyte for processing the surface of a metal implant and its surface treatment method by using the electrolyte

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