TWI564854B - 關於發光二極體的發光裝置與驅動方法 - Google Patents
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Description
本發明係相關於發光二極體,尤指採用發光二極體,可以產生高演色性指標之發光裝置以及相關之驅動方法。
發光二極體(light emitting diodes,LEDs)是一種以半導體為材料的發光裝置。因為LED本身具有高壽命、省電、輕巧等優點,LED漸漸地取代像是鎢絲燈泡等的一些傳統發光裝置。LED所發出的光顏色往往取決於製造時所採用的半導體材料。
有些LED所採用的半導體材料是三五族合金,像是氮化鎵(gallium nitride,GaN)。製造LED的過程,一般是將這些合金以磊晶的方式一層一層沉積在碳化矽(silicon carbide)基底或是藍寶石(sapphire)基底上。而這些合金可以有p型或是n型摻雜來調整其電性特質。以GaN為基礎的LED所發出的光,其顏色,在光譜上大致是落在紫外線(UV)或是藍色附近。
為了照明上的使用,可以在LED上覆蓋一層螢光粉來達到此目的。螢光粉是一種光致發光的物質,它可以吸收光譜中某一部分的電磁波,然後發出在光譜中另一部分的電磁波。因此,當LED上覆蓋一層螢光粉時,LED中沒有被螢光粉層所吸收的光、以及螢光粉所發出的光互相混合之後,就可產生所希望的顏色與亮度。
以白光為例,白光LED所採用的是以InGaN為發光層的藍光LED,而這藍光LED上塗佈有螢光粉,其可以將藍光LED所發出的部分藍光,轉換成黃光或是黃綠光。當此白光LED被供電時,藍光LED中的半導體會將電能轉換而發射出藍光(或UV光),其中部分將會被螢光粉所吸收並轉換成黃綠光(或黃光)。因為黃光或是黃綠光大致是藍光的互補色,所以人眼判定這黃光與藍光的整
體組合為白光。白色光源有幾個特性需要考量,像是相關色溫(correlated color temperature,CCT)以及演色指數(color rendering index,CRI)等,都是用來描述這白色光源所發出的白光有多接近自然界的白光。
色溫以凱氏溫度(°K)表示,代表了一理想黑體在那溫度時所發出的顏色組合。一般就光譜而言,鎢絲燈泡很接近理想黑體。當鎢絲燈泡加熱至2000°K時,會發出紅色光線。隨著溫度升高,會漸漸地轉橙紅、黃。到5000°K時,大致是白色。到8000°K時為藍色。簡單的說,溫度越高,藍色的成分越多;溫度越低,紅色的成分越多。因為許多人造光源的光譜分佈並不相同於理想黑體的光譜分佈,所以往往採用相關色溫CCT來表示其色溫。若一人造光源所發出的顏色組合接近理想黑體在一色溫的顏色組合,此人造光源的CCT即定義為該色溫。有數種方法可以從色度座標(Chromaticity Coordinates)上的位置,來推導出一白光的CCT。儘管方法不同,但是推導出來的CCT差異不會太大。
CRI一般的定義是8種選定顏色在那白光光源照射下的表現結果。一個白光光源的CRI最高值是100,表示8種顏色完整的被重現出來。越低的CRI,表示8種顏色中,在那白色光源的照射下,有越大的偏差。有的CRI的定義是採用了14種選定顏色。在此說明書中,CRI的定義泛指以上或是任何類似定義所產生的結果。
目前比較為人所熟知的白光LED是採用中心發光波長(peak-emission wavelength)大約為440nm到480nm的藍光二極體與俗稱YAG螢光粉(其組成為cerium doped yttrium aluminum)的組合。YAG螢光粉可以將部分的藍光轉換成黃綠光。人眼看到藍光與黃綠光的組合光時,會認為是白光。
目前,採用YAG螢光粉或類似螢光粉的白光LED很難達到所希望的CRI以及CCT。因為這種白光LED所發出的光,在光譜上,
往往只有兩個峰值,分別落在藍光附近與黃綠光附近,欠缺了要調整CRI與CCT所需要的低波長紅光部分。所以,這樣的白光LED的CCT很難降到5000°K以下,CRI往往低於75。
一種可以拉低白光LED的CCT與增加其CRI的方法,是改變螢光粉的成分。舉例來說,螢光粉層採用兩種以上的螢光粉:一種是YAG螢光粉,用來產生黃綠光,另一種螢光粉專門用來產生紅光。這樣的白光LED在光譜上,就可能可以在藍光、黃綠光、與紅光附近的頻率各產生一個峰值。只要調整峰值的比例與大小,就可能可以得到所希望的CCT與CRI。但是,產生紅光的螢光粉的能量轉換效率並不好,會降低整個白光LED的發光效率。
本發明之實施例提供一種發光裝置,包含、至少一藍光發光二極體晶粒、至少一紅光發光二極體晶粒、以及一電連接結構。藍光發光二極體晶粒可發出第一種光。紅光發光二極體晶粒可發出第二種光。電連接結構用以電連接藍光發光二極體晶粒以及紅光發光二極體晶粒,並使其發光。當藍光與該紅光發光二極體晶粒發光時,藍光發光二極體晶粒以及紅光發光二極體晶粒分別消耗一第一電功率WB以及一第二電功率WR,且發光裝置的相關色溫為TN絕對溫度。功率比RW為第一電功率WB對第二電功率WR之比值。功率比RW係大約介於7.67*ln(TN)-56.6到5.01*ln(TN)-37.2之間。
第1圖顯示依據本發明所實施的一白光LED 10。白光LED 10可為一COB(circuit-on-board)封裝,其包含有一封裝基板(submount)12、一整流器31、四個發光二極體晶粒32a~32d、一濾波電容34、一限流電阻36、黏著墊(bonding pad)38、以及電連接結構。電連接結構由封裝基板12上的導電線(conductive strips)39
與焊線(bonding wire)37所構成。第2圖顯示第1圖之白光LED 10的等效電路圖。
交流的高壓市電(譬如110ACV或120ACV)AC,可以從封裝基板12上的黏著墊38輸入,提供白光LED 10的電能。整流器31可以是一橋式整流器(bridge rectifier),黏著於封裝基板12上,可以用來將交流的高壓市電AC,轉換成直流電源。限流電阻36可控制流經白光LED 10的電流量。濾波電容34可用來穩定整流器31的兩輸出端的跨壓,以提供穩定的電壓給發光二極體晶粒。發光二極體晶粒32a~32d設置於封裝基板12上,且利用一焊線37連接使發光二極體晶粒32a~32d成一串聯結構,使流經每個發光二極體晶粒的電流都一樣。發光二極體晶粒32a~32d至少一個是紅光發光二極體晶粒,其餘是藍光發光二極體晶粒。藉由電連接結構,濾波電容34上的直流電源可提供電流使發光二極體晶粒32a~32d可以發光。
第3圖舉例顯示第1圖之白光LED 10的切面示意圖。封裝基板12可以是一具有良好導熱係數的陶瓷基板,其技術可由厚膜製程(thick film)、低溫共燒製程(LTCC)與薄膜製程等方式製作而成。封裝基板12上可以形成有以印刷製版或是微影製程所形成的金屬線(metal strip)29。在本實施例中,封裝基板12上的一凹槽13中,放置了一藍光發光二極體晶粒20以及一紅光發光二極體晶粒22。在此實施例中,藍光發光二極體晶粒為一種發光二極體,可發出第一種光,其中心發光波長大約位於430nm到480nm之間;紅光發光二極體晶粒為另一種發光二極體,可發出第二種光,其中心發光波長大約位於600nm到660nm之間。藍光發光二極體晶粒20上設有一螢光粉層24,其可受藍光發光二極體晶粒20所發出的第一種光,例如藍光或是UV,所激發而發出第三種光,例如黃光或是黃綠光(其中心發光波長大約位於540nm到590nm之間)。在第3圖的實施例中,螢光粉層24並沒有形成在紅光發光二極體晶粒22上。透明或半透明的樹脂18將藍光發光二極體晶粒
20以及紅光發光二極體晶粒22封在凹槽13中。樹脂18亦可作為一個光學透鏡,來控制白光LED的出射光角度。在另一個實施例中,螢光粉可以大致均勻地分佈於樹脂18,同時覆蓋在藍光發光二極體晶粒20以及紅光發光二極體晶粒22之上。一光反射層15形成於凹槽13上,其可反射藍光發光二極體晶粒20以及紅光發光二極體晶粒22往光反射層15方向所發出的光線,進而增加往樹脂18方向的照明亮度。藍光發光二極體晶粒20與紅光發光二極體晶粒22用金或銅的焊線(bonding wire)26相連接。焊線26也提供了藍光發光二極體晶粒20與紅光發光二極體晶粒22到封裝基板12上的金屬線29的電性連接。電子元件14,可以是一整流器、一電阻、或一電容等,設置在兩個金屬線29之上。有的金屬線29會作為一黏著墊28,作為高壓市電AC的輸入。
第4圖舉例顯示一發光二極體晶粒40,其可以是第1圖中的發光二極體晶粒32a~32d其中之一。基底(substrate)42可以是一藍寶石基底,其上有以半導體製程所形成數個LED單元44、導線46、以及黏著墊48。LED單元44可以在基底42排成一個陣列,發出大約相同光譜的光線。每個LED單元44具有一發光接面50,其半導體材料可以決定LED單元44的發光顏色。舉例來說,AlGaInP適合於一紅光LED單元,而InGaN適合於一深綠、藍、紫及紫外光LED單元。導線46將LED單元44串聯在一起,也將LED單元44電性連接到黏著墊48。
第5圖顯示第1圖之白光LED 10的相關色溫TN與功率比RW的關係,其中TN以絕對溫度表示。在此說明書中,功率比RW意指一白光LED中,所有藍光發光二極體晶粒所消耗的電功率(假定為WB),對所有紅光發光二極體晶粒所消耗的電功率(假定為WR)的比值,即RW=WB/WR。在第5圖中,曲線60(星型)、61(菱形)與62(方形)是依據本發明所實施的三種白光LED之量測結果。在本實施例中,藍光發光效率EFB,為藍光發光二極體消耗的每單位電功率,所產生藍光的光通量;白光發光效率EFW,為藍光發
光二極體消耗的每單位電功率,所產生的藍光(第一種光)以及螢光粉層產生黃綠光(第三種光),混和後的光通量;紅光發光效率EFR,為紅光發光二極體所消耗的每單位電功率,所產生紅光(第二種光)的光通量。發光效率比定義為,白光發光效率EFW對紅光發光效率EFR的比值。在第5圖中所量測的發光效率比(EFW/EFR),分別是0.8(曲線60)、1(曲線61)、以及1.2(曲線62)。曲線60表示為RW=7.67*ln(TN)-56.6;曲線62則表示RW=5.01*ln(TN)-37.2。斜線區域64位於曲線60與62之間。根據所欲得的相關色溫(或功率比RW),利用曲線61、62、63,使得白光LED 10的功率比RW(或相關色溫TN)落入斜線區域64,同時白光LED 10的CRI也可達到85以上。
當一照明系統需要達到一相關色溫時,第5圖可以決定一白光LED中藍光發光二極體晶粒與紅光發光二極體晶粒的數量。舉例來說,假定每個藍光發光二極體晶粒有12個藍色LED單元,每個藍色LED單元的順向操作電壓VF大約是3.1伏特,每個紅光發光二極體晶粒有6個紅色LED單元,每個紅色LED單元的順向操作電壓VF大約是2伏特。如此,可以推論每個藍光發光二極體晶粒的順向操作電壓大約是37.2伏特(=3.1V*12),而每個紅光發光二極體晶粒的順向操作電壓大約是12伏特(=2V*6)。如果想要達到的相關色溫TN為4000°K,依據第5圖,功率比RW應是介於7.015到4.353之間。因此,只要5個藍光發光二極體晶粒,串聯3個紅光發光二極體晶粒,所產生的功率比RW將約等於5.16(=37.2*5/(12*3)),整體的順向操作電壓約222V(=37.2*5+12*3),就可以大約適用於交流市電為220或240ACV的燈泡照明應用,達到相關色溫為4000°K且具有高CRI。
儘管在第2圖中的實施例裡,所有的LED單元是全部串聯在一起,但是本發明並不限於此。第6圖顯示依據本發明的另一個實施例,其中,藍光發光二極體單元70串聯在一起,被定電流66
所驅動;紅光發光二極體單元72串聯在一起,被定電流68所驅動。藍光發光二極體單元70與紅光發光二極體單元72可共同設置在一封裝基板上,透過封裝基板上的金屬導線或是焊線,達到串聯或並聯的結構。定電流66與定電流68使藍光發光二極體單元70對紅光發光二極體單元72的功率比RW,落入第5圖中的斜線區域64,可達到所希望的相對色溫以及CRI。藍光發光二極體單元70可全部在一藍光發光二極體晶粒或是分在數個藍光發光二極體晶粒。類似的,紅光發光二極體單元72可以全部在一紅光發光二極體晶粒或是分在數個紅光發光二極體晶粒。在第6圖之實施例中,藍光發光二極體單元70等同跟紅光發光二極體單元72並聯。因為流經藍光發光二極體單元70的電流跟紅光發光二極體單元72的電流相互獨立,所以,只要選擇適當的二極體數量以及定電流大小,將功率比RW調整在斜線區域62內,即可達所希望的相對色溫。
在本發明的一實施例中,藍光發光二極體晶粒所產生的藍光(第一種光)以及螢光粉層產生黃綠光(第三種光),混合而成一白光。白光之白光發光效率EFW介於每瓦100流明到200流明之間,而每個紅光發光二極體晶粒發出之紅光(第二種光)之紅光發光效率EFR介於每瓦100流明到200流明之間,而白光LED的封裝基板溫度操作於60度C到100度C之間。在一實施例中,紅光發光效率EFR及白光發光效率EFW均大於每瓦100流明。
在本發明的一實施例中,用來轉換一藍光發光二極體晶粒所發出的藍光為黃光或黃綠光的螢光粉層,其中的螢光粉包含有由Mg、Ca、Ba、Sr、Zn、Pr、Nd、Dy、Er、Ho、Y、Ce、Al所構成的元素群組中的至少其中之一。螢光粉層可以只有一種化學組成的螢光粉材料,也可以有兩種或是以上的不同化學組成的螢光粉材料。
第3圖中的藍光發光二極體晶粒20與紅光發光二極體晶粒22是共平面地固定於封裝基板12上,但本發明不限於此。在第7圖
之實施例中,藍光發光二極體晶粒20與紅光發光二極體晶粒22設置於不同的平面上,且紅光發光二極體晶粒22相對於封裝基板的距離大於藍光發光二極體晶粒20相對於封裝基板的距離。適當地安排藍光發光二極體晶粒20與紅光發光二極體晶粒22在封裝基板上的位置,可以改變整個發光裝置的光形。
本發明實施例中的發光二極體晶粒也不限於第3圖中的只有一個光學透鏡。另一個依據本發明的實施例可以具有數個光學透鏡,一對一地設於發光二極體晶粒上,如同第8圖所示。
以上所述僅為本發明之較佳實施例,凡依本發明申請專利範圍所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。
10‧‧‧白光LED
12‧‧‧封裝基板
13‧‧‧凹槽
14‧‧‧電子元件
15‧‧‧光反射層
18‧‧‧樹脂
20‧‧‧藍光發光二極體晶粒
22‧‧‧紅光發光二極體晶粒
24‧‧‧螢光粉層
26‧‧‧焊線
28‧‧‧黏著墊
29‧‧‧金屬線
31‧‧‧整流器
32a~32d‧‧‧發光二極體晶粒
34‧‧‧濾波電容
36‧‧‧限流電阻
37‧‧‧焊線
38‧‧‧黏著墊
39‧‧‧導電線
40‧‧‧發光二極體晶粒
42‧‧‧基底
44‧‧‧LED單元
46‧‧‧導線
48‧‧‧黏著墊
50‧‧‧發光接面
60、61、62‧‧‧曲線
64‧‧‧斜線區域
66、68‧‧‧定電流
70‧‧‧藍光發光二極體單元
72‧‧‧紅光發光二極體單元
第1圖顯示依據本發明所實施的一白光LED。
第2圖顯示第1圖之白光LED的等效電路圖。
第3圖舉例顯示第1圖之白光LED的切面示意圖。
第4圖舉例顯示一發光二極體晶粒。
第5圖顯示第1圖之白光LED的相關色溫TN與功率比RW的關係。
第6圖顯示依據本發明的另一個實施例。
第7圖顯示藍光發光二極體晶粒與紅光發光二極體晶粒設置於不同的平面。
第8圖顯示白光LED具有多個光學透鏡。
60、61、62‧‧‧曲線
64‧‧‧斜線區域
Claims (10)
- 一種發光裝置,包含有:一第一發光二極體晶粒,可發出第一種光;一第二發光二極體晶粒,可發出第二種光;及一電連接結構,用以電連接該第一發光二極體晶粒以及該第二發光二極體晶粒;其中,該第一發光二極體晶粒以及該第二發光二極體晶粒分別消耗一第一電功率WB以及一第二電功率WR,且該發光裝置的相關色溫為TN;該第一電功率WB對該第二電功率WR之功率比為RW;以及該功率比RW係介於7.67*ln(TN)-56.6到5.01*ln(TN)-37.2之間。
- 如申請專利範圍第1項所述之發光裝置,其中,該第一種光係為藍光或是紫外線。
- 如申請專利範圍第1項所述之發光裝置,更包含一螢光粉層,光學地耦接至該第一發光二極體晶粒,可受該第一種光所激發,而發出第三種光。
- 如申請專利範圍第3項所述之發光裝置,其中,該螢光粉層係 位於該第一發光二極體晶粒與該第二發光二極體晶粒上。
- 如申請專利範圍第3項所述之發光裝置,其中,該螢光粉層係位於該第一發光二極體晶粒上,但無位在該第二發光二極體晶粒上。
- 如申請專利範圍第3項所述之發光裝置,其中,該螢光粉層包含至少兩種不同化學組成的螢光粉材料。
- 如申請專利範圍第3項所述之發光裝置,其中,該第一種光與該第三種光若混合為白光,該第二種光之發光效率及該白光之發光效率均大於100流明/瓦。
- 如申請專利範圍第1項所述之發光裝置,更進一步包含一封裝基板,其中,該第一發光二極體晶粒與該第二發光二極體晶粒係共平面地固定於該封裝基板上。
- 如申請專利範圍第1項所述之發光裝置,更進一步包含一封裝基板,其中該第一發光二極體晶粒與該第二發光二極體晶粒係不共平面地固定於該封裝基板上。
- 一種發光裝置,包含有: 一第一發光二極體晶粒,可發出第一種光;一第二發光二極體晶粒,可發出第二種光;及一電連接結構,用以電連接該第一發光二極體晶粒以及該第二發光二極體晶粒;其中,該第一發光二極體晶粒以及該第二發光二極體晶粒分別消耗一第一電功率以及一第二電功率WR,且該發光裝置的相關色溫為TN;該第一電功率對該第二電功率之功率比與該發光裝置的相關色溫呈一對數關係。
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CN101855492A (zh) * | 2007-11-12 | 2010-10-06 | 三菱化学株式会社 | 照明装置 |
TWM340556U (en) * | 2007-12-05 | 2008-09-11 | Pro Light Technology Ltd | Light-emitting diode |
TW201143024A (en) * | 2010-04-19 | 2011-12-01 | Bridgelux Inc | Phosphor converted light source having an additional LED to provide long wavelength light |
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Also Published As
Publication number | Publication date |
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DE102013112498A1 (de) | 2014-05-15 |
KR20140062414A (ko) | 2014-05-23 |
DE102013112498B4 (de) | 2020-11-12 |
TW201419237A (zh) | 2014-05-16 |
US9054278B2 (en) | 2015-06-09 |
US20140131749A1 (en) | 2014-05-15 |
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