TWI563637B - Non-volatile memory and manufacturing method thereof - Google Patents
Non-volatile memory and manufacturing method thereofInfo
- Publication number
- TWI563637B TWI563637B TW104103412A TW104103412A TWI563637B TW I563637 B TWI563637 B TW I563637B TW 104103412 A TW104103412 A TW 104103412A TW 104103412 A TW104103412 A TW 104103412A TW I563637 B TWI563637 B TW I563637B
- Authority
- TW
- Taiwan
- Prior art keywords
- manufacturing
- volatile memory
- volatile
- memory
- Prior art date
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW104103412A TWI563637B (en) | 2015-02-02 | 2015-02-02 | Non-volatile memory and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW104103412A TWI563637B (en) | 2015-02-02 | 2015-02-02 | Non-volatile memory and manufacturing method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201630163A TW201630163A (zh) | 2016-08-16 |
TWI563637B true TWI563637B (en) | 2016-12-21 |
Family
ID=57182239
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW104103412A TWI563637B (en) | 2015-02-02 | 2015-02-02 | Non-volatile memory and manufacturing method thereof |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI563637B (zh) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200507248A (en) * | 2003-01-02 | 2005-02-16 | Actrans System Inc | Flash memory with trench select gate and fabrication process |
TW200802894A (en) * | 2006-03-24 | 2008-01-01 | Nec Electronics Corp | Split gate type non-volatile semiconductor memory device and method of manufacturing the same |
TW200810093A (en) * | 2006-08-10 | 2008-02-16 | Taiwan Semiconductor Mfg | Split-gate flash memory devices and methods for forming the same |
US20090085090A1 (en) * | 2007-09-28 | 2009-04-02 | Nec Electronics Corporation | Non-volatile semiconductor memory device having an erasing gate |
US8421141B2 (en) * | 2011-04-18 | 2013-04-16 | Powerchip Technology Corporation | Non-volatile memory device and method of fabricating the same |
-
2015
- 2015-02-02 TW TW104103412A patent/TWI563637B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200507248A (en) * | 2003-01-02 | 2005-02-16 | Actrans System Inc | Flash memory with trench select gate and fabrication process |
TW200802894A (en) * | 2006-03-24 | 2008-01-01 | Nec Electronics Corp | Split gate type non-volatile semiconductor memory device and method of manufacturing the same |
TW200810093A (en) * | 2006-08-10 | 2008-02-16 | Taiwan Semiconductor Mfg | Split-gate flash memory devices and methods for forming the same |
US20090085090A1 (en) * | 2007-09-28 | 2009-04-02 | Nec Electronics Corporation | Non-volatile semiconductor memory device having an erasing gate |
US8421141B2 (en) * | 2011-04-18 | 2013-04-16 | Powerchip Technology Corporation | Non-volatile memory device and method of fabricating the same |
Also Published As
Publication number | Publication date |
---|---|
TW201630163A (zh) | 2016-08-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI563643B (en) | Semiconductor structure and manufacturing method thereof | |
SG11201706914TA (en) | Memory device controlling method and memory device | |
HK1208435A1 (zh) | 水泥及其製造方法 | |
GB2541961B (en) | Multi-time programmable non-volatile memory cell | |
TWI562148B (en) | Flash memory and programming method thereof | |
GB2536200B (en) | Memory management | |
HK1253387A1 (zh) | 微乳液型化妝品及其製造方法 | |
GB2536880B (en) | Memory management | |
PL3306613T3 (pl) | Urządzenie pamięci i sposób jego montowania | |
GB2537960B (en) | Memory management | |
GB201620954D0 (en) | Memory management | |
IL267292B1 (en) | Non-volatile memory | |
SG11201609688QA (en) | Formed material manufacturing method and formed material | |
SG11201507205UA (en) | Formed material manufacturing method and formed material | |
TWI562290B (en) | 3d nor flash memory and manufacturing method thereof | |
SG11201707437RA (en) | Formed material manufacturing method | |
TWI563635B (en) | Non-volatile memory device and method for fabricating thereof | |
TWI563656B (en) | Semiconductor structure and manufacturing method thereof | |
SG10201609225QA (en) | Memory Devices And Methods | |
PT3345501T (pt) | Guarda-chuva e método para fabricá-lo | |
EP3453021A4 (en) | INHIBITION OF PROGRAM IN MEMORY DEVICES | |
GB201718144D0 (en) | Manufacturing method | |
SI3325839T1 (sl) | Oblikovani material in postopek proizvodnje | |
TWI563670B (en) | Non-volatile memory | |
PL3279015T3 (pl) | Stabilizator i sposób jego wytwarzania |