TWI563637B - Non-volatile memory and manufacturing method thereof - Google Patents

Non-volatile memory and manufacturing method thereof

Info

Publication number
TWI563637B
TWI563637B TW104103412A TW104103412A TWI563637B TW I563637 B TWI563637 B TW I563637B TW 104103412 A TW104103412 A TW 104103412A TW 104103412 A TW104103412 A TW 104103412A TW I563637 B TWI563637 B TW I563637B
Authority
TW
Taiwan
Prior art keywords
manufacturing
volatile memory
volatile
memory
Prior art date
Application number
TW104103412A
Other languages
English (en)
Other versions
TW201630163A (zh
Inventor
Yu Ming Cheng
Original Assignee
Iotmemory Technology Inc
Yu Ming Cheng
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Iotmemory Technology Inc, Yu Ming Cheng filed Critical Iotmemory Technology Inc
Priority to TW104103412A priority Critical patent/TWI563637B/zh
Publication of TW201630163A publication Critical patent/TW201630163A/zh
Application granted granted Critical
Publication of TWI563637B publication Critical patent/TWI563637B/zh

Links

TW104103412A 2015-02-02 2015-02-02 Non-volatile memory and manufacturing method thereof TWI563637B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW104103412A TWI563637B (en) 2015-02-02 2015-02-02 Non-volatile memory and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW104103412A TWI563637B (en) 2015-02-02 2015-02-02 Non-volatile memory and manufacturing method thereof

Publications (2)

Publication Number Publication Date
TW201630163A TW201630163A (zh) 2016-08-16
TWI563637B true TWI563637B (en) 2016-12-21

Family

ID=57182239

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104103412A TWI563637B (en) 2015-02-02 2015-02-02 Non-volatile memory and manufacturing method thereof

Country Status (1)

Country Link
TW (1) TWI563637B (zh)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200507248A (en) * 2003-01-02 2005-02-16 Actrans System Inc Flash memory with trench select gate and fabrication process
TW200802894A (en) * 2006-03-24 2008-01-01 Nec Electronics Corp Split gate type non-volatile semiconductor memory device and method of manufacturing the same
TW200810093A (en) * 2006-08-10 2008-02-16 Taiwan Semiconductor Mfg Split-gate flash memory devices and methods for forming the same
US20090085090A1 (en) * 2007-09-28 2009-04-02 Nec Electronics Corporation Non-volatile semiconductor memory device having an erasing gate
US8421141B2 (en) * 2011-04-18 2013-04-16 Powerchip Technology Corporation Non-volatile memory device and method of fabricating the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200507248A (en) * 2003-01-02 2005-02-16 Actrans System Inc Flash memory with trench select gate and fabrication process
TW200802894A (en) * 2006-03-24 2008-01-01 Nec Electronics Corp Split gate type non-volatile semiconductor memory device and method of manufacturing the same
TW200810093A (en) * 2006-08-10 2008-02-16 Taiwan Semiconductor Mfg Split-gate flash memory devices and methods for forming the same
US20090085090A1 (en) * 2007-09-28 2009-04-02 Nec Electronics Corporation Non-volatile semiconductor memory device having an erasing gate
US8421141B2 (en) * 2011-04-18 2013-04-16 Powerchip Technology Corporation Non-volatile memory device and method of fabricating the same

Also Published As

Publication number Publication date
TW201630163A (zh) 2016-08-16

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