TWI563133B - - Google Patents
Info
- Publication number
- TWI563133B TWI563133B TW104120459A TW104120459A TWI563133B TW I563133 B TWI563133 B TW I563133B TW 104120459 A TW104120459 A TW 104120459A TW 104120459 A TW104120459 A TW 104120459A TW I563133 B TWI563133 B TW I563133B
- Authority
- TW
- Taiwan
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013260868 | 2013-12-18 | ||
| JP2014071342 | 2014-03-31 | ||
| JP2014199217A JP5770905B1 (en) | 2013-12-18 | 2014-09-29 | Gallium nitride free-standing substrate, light emitting device, and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201627544A TW201627544A (en) | 2016-08-01 |
| TWI563133B true TWI563133B (en) | 2016-12-21 |
Family
ID=54187194
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105136228A TWI662163B (en) | 2013-12-18 | 2015-06-25 | Free-standing gallium nitride substrate, light-emitting element, and manufacturing method thereof |
| TW104120459A TW201627544A (en) | 2013-12-18 | 2015-06-25 | Freestanding gallium nitride substrate, light-emitting element and manufacturing method of these |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105136228A TWI662163B (en) | 2013-12-18 | 2015-06-25 | Free-standing gallium nitride substrate, light-emitting element, and manufacturing method thereof |
Country Status (2)
| Country | Link |
|---|---|
| JP (2) | JP5770905B1 (en) |
| TW (2) | TWI662163B (en) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6474734B2 (en) * | 2013-12-18 | 2019-02-27 | 日本碍子株式会社 | COMPOSITE SUBSTRATE FOR LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF |
| CN107208312B (en) | 2015-01-29 | 2019-10-01 | 日本碍子株式会社 | Self-supporting substrate, function element and its manufacturing method |
| WO2017057271A1 (en) * | 2015-09-30 | 2017-04-06 | 日本碍子株式会社 | Oriented alumina substrate for epitaxial growth |
| CN108025979B (en) * | 2015-09-30 | 2021-06-01 | 日本碍子株式会社 | Oriented alumina substrate for epitaxial growth |
| JP6715861B2 (en) | 2015-11-16 | 2020-07-01 | 日本碍子株式会社 | Manufacturing method of oriented sintered body |
| JP6688109B2 (en) | 2016-02-25 | 2020-04-28 | 日本碍子株式会社 | Surface emitting device, external cavity type vertical surface emitting laser, and method for manufacturing surface emitting device |
| WO2017145802A1 (en) * | 2016-02-25 | 2017-08-31 | 日本碍子株式会社 | Polycrystalline gallium nitride self-supported substrate and light emitting element using same |
| WO2017169622A1 (en) * | 2016-03-29 | 2017-10-05 | 日本碍子株式会社 | Free-standing substrate and laminated body |
| JP6639317B2 (en) * | 2016-04-21 | 2020-02-05 | 日本碍子株式会社 | Method for producing group 13 element nitride crystal and seed crystal substrate |
| JP6846913B2 (en) * | 2016-11-11 | 2021-03-24 | 日本碍子株式会社 | Method for manufacturing wide-wavelength light-emitting device and wide-wavelength light-emitting device |
| TWI621249B (en) * | 2017-03-27 | 2018-04-11 | 英屬開曼群島商錼創科技股份有限公司 | Micro light emitting diode and display panel |
| TWI632673B (en) * | 2017-07-11 | 2018-08-11 | 錼創科技股份有限公司 | Micro light-emitting device and display apparatus |
| CN111052414B (en) | 2017-08-24 | 2023-07-21 | 日本碍子株式会社 | Group 13 element nitride layer, free-standing substrate, and functional element |
| US11309455B2 (en) | 2017-08-24 | 2022-04-19 | Ngk Insulators, Ltd. | Group 13 element nitride layer, free-standing substrate and functional element |
| JP6639751B2 (en) | 2017-08-24 | 2020-02-05 | 日本碍子株式会社 | Group 13 element nitride layer, free-standing substrate and functional element |
| JP6854903B2 (en) | 2017-08-24 | 2021-04-07 | 日本碍子株式会社 | Group 13 element nitride layer, self-supporting substrate and functional element |
| JP7185123B2 (en) * | 2017-12-26 | 2022-12-07 | 日亜化学工業株式会社 | Optical member and light emitting device |
| JP7147644B2 (en) * | 2019-03-18 | 2022-10-05 | 豊田合成株式会社 | Method for manufacturing group III nitride semiconductor |
| CN111607825A (en) * | 2020-06-02 | 2020-09-01 | 无锡吴越半导体有限公司 | Substrate, self-supporting GaN single crystal based on substrate and preparation method of self-supporting GaN single crystal |
| CN116364819B (en) * | 2023-05-31 | 2023-12-15 | 江西兆驰半导体有限公司 | LED epitaxial wafer, preparation method thereof and LED |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200925340A (en) * | 2007-10-04 | 2009-06-16 | Sumitomo Electric Industries | GaN epitaxial substrate, semiconductor device and methods for manufacturing gan epitaxial substrate and semiconductor device |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3410863B2 (en) * | 1995-07-12 | 2003-05-26 | 株式会社東芝 | Compound semiconductor device and compound semiconductor light emitting device |
| JP3864870B2 (en) * | 2001-09-19 | 2007-01-10 | 住友電気工業株式会社 | Single crystal gallium nitride substrate, growth method thereof, and manufacturing method thereof |
| US7221037B2 (en) * | 2003-01-20 | 2007-05-22 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing group III nitride substrate and semiconductor device |
| JP2004359495A (en) * | 2003-06-04 | 2004-12-24 | Ngk Insulators Ltd | Alumina substrate for epitaxial film |
| JP4341702B2 (en) * | 2007-06-21 | 2009-10-07 | 住友電気工業株式会社 | Group III nitride semiconductor light emitting device |
| JP4981602B2 (en) * | 2007-09-25 | 2012-07-25 | パナソニック株式会社 | Method for manufacturing gallium nitride substrate |
| US9012253B2 (en) * | 2009-12-16 | 2015-04-21 | Micron Technology, Inc. | Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods |
-
2014
- 2014-09-29 JP JP2014199217A patent/JP5770905B1/en active Active
-
2015
- 2015-06-24 JP JP2015126714A patent/JP2016001738A/en active Pending
- 2015-06-25 TW TW105136228A patent/TWI662163B/en active
- 2015-06-25 TW TW104120459A patent/TW201627544A/en unknown
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200925340A (en) * | 2007-10-04 | 2009-06-16 | Sumitomo Electric Industries | GaN epitaxial substrate, semiconductor device and methods for manufacturing gan epitaxial substrate and semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015199635A (en) | 2015-11-12 |
| TW201627544A (en) | 2016-08-01 |
| TWI662163B (en) | 2019-06-11 |
| JP2016001738A (en) | 2016-01-07 |
| TW201708635A (en) | 2017-03-01 |
| JP5770905B1 (en) | 2015-08-26 |