TWI563131B - Directional crystal solidification furnace and method for manufacturing an ingot of a crystal material - Google Patents

Directional crystal solidification furnace and method for manufacturing an ingot of a crystal material

Info

Publication number
TWI563131B
TWI563131B TW101135514A TW101135514A TWI563131B TW I563131 B TWI563131 B TW I563131B TW 101135514 A TW101135514 A TW 101135514A TW 101135514 A TW101135514 A TW 101135514A TW I563131 B TWI563131 B TW I563131B
Authority
TW
Taiwan
Prior art keywords
crystal
ingot
manufacturing
directional
solidification furnace
Prior art date
Application number
TW101135514A
Other languages
English (en)
Other versions
TW201313969A (zh
Inventor
Patrick Androt
Philippe Lay
Gilles Repellin
Philippe Reymond
Original Assignee
Ecm Technologies
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ecm Technologies filed Critical Ecm Technologies
Publication of TW201313969A publication Critical patent/TW201313969A/zh
Application granted granted Critical
Publication of TWI563131B publication Critical patent/TWI563131B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/006—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B14/00—Crucible or pot furnaces
    • F27B14/06—Crucible or pot furnaces heated electrically, e.g. induction crucible furnaces with or without any other source of heat
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B14/00—Crucible or pot furnaces
    • F27B14/08—Details peculiar to crucible or pot furnaces
    • F27B14/20—Arrangement of controlling, monitoring, alarm or like devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW101135514A 2011-09-28 2012-09-27 Directional crystal solidification furnace and method for manufacturing an ingot of a crystal material TWI563131B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1158702A FR2980489B1 (fr) 2011-09-28 2011-09-28 Four de solidification dirigee de cristaux

Publications (2)

Publication Number Publication Date
TW201313969A TW201313969A (zh) 2013-04-01
TWI563131B true TWI563131B (en) 2016-12-21

Family

ID=46851896

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101135514A TWI563131B (en) 2011-09-28 2012-09-27 Directional crystal solidification furnace and method for manufacturing an ingot of a crystal material

Country Status (4)

Country Link
EP (1) EP2574689B1 (zh)
CN (1) CN103031594A (zh)
FR (1) FR2980489B1 (zh)
TW (1) TWI563131B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201319671D0 (en) * 2013-11-07 2013-12-25 Ebner Ind Ofenbau Controlling a temperature of a crucible inside an oven
AT524600B1 (de) * 2020-12-29 2023-05-15 Fametec Gmbh Verfahren zur Herstellung eines einkristallinen Kristalls, insbesondere eines Saphirs
AT524601B1 (de) * 2020-12-29 2023-04-15 Fametec Gmbh Vorrichtung zum Züchten eines künstlich hergestellten Einkristalls, insbesondere eines Saphir-Einkristalls
AT524602B1 (de) * 2020-12-29 2023-05-15 Fametec Gmbh Vorrichtung zur Herstellung eines Einkristalls

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090280050A1 (en) * 2008-04-25 2009-11-12 Applied Materials, Inc. Apparatus and Methods for Casting Multi-Crystalline Silicon Ingots
CN201962406U (zh) * 2011-01-29 2011-09-07 大连隆田科技有限公司 一种双开拉板式散热的感应熔炼多晶硅铸锭炉

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3964070B2 (ja) * 1999-04-08 2007-08-22 三菱マテリアルテクノ株式会社 結晶シリコン製造装置
US7344596B2 (en) * 2005-08-25 2008-03-18 Crystal Systems, Inc. System and method for crystal growing
KR100955221B1 (ko) * 2007-10-05 2010-04-29 주식회사 글로실 힌지를 이용한 도어 개폐장치가 구비된 태양전지용 다결정실리콘 주괴 제조 장치
KR101217458B1 (ko) * 2009-09-24 2013-01-07 주식회사 글로실 회전형 도어 개폐장치가 구비된 다결정 실리콘 주괴 제조장치
TW201142093A (en) * 2010-03-12 2011-12-01 Gt Solar Inc Crystal growth apparatus with load-centered aperture, and device and method for controlling heat extraction from a crucible
CN102140672B (zh) * 2011-03-15 2012-12-26 杭州精功机电研究所有限公司 一种晶硅铸锭炉双腔室热场及其控制方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090280050A1 (en) * 2008-04-25 2009-11-12 Applied Materials, Inc. Apparatus and Methods for Casting Multi-Crystalline Silicon Ingots
CN201962406U (zh) * 2011-01-29 2011-09-07 大连隆田科技有限公司 一种双开拉板式散热的感应熔炼多晶硅铸锭炉

Also Published As

Publication number Publication date
FR2980489B1 (fr) 2014-09-19
EP2574689A1 (fr) 2013-04-03
EP2574689B1 (fr) 2019-02-27
TW201313969A (zh) 2013-04-01
CN103031594A (zh) 2013-04-10
FR2980489A1 (fr) 2013-03-29

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