TWI562211B - Semiconductor device having metal gate and fabricating method thereof - Google Patents
Semiconductor device having metal gate and fabricating method thereofInfo
- Publication number
- TWI562211B TWI562211B TW100111682A TW100111682A TWI562211B TW I562211 B TWI562211 B TW I562211B TW 100111682 A TW100111682 A TW 100111682A TW 100111682 A TW100111682 A TW 100111682A TW I562211 B TWI562211 B TW I562211B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor device
- metal gate
- fabricating method
- fabricating
- gate
- Prior art date
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW100111682A TWI562211B (en) | 2011-04-01 | 2011-04-01 | Semiconductor device having metal gate and fabricating method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW100111682A TWI562211B (en) | 2011-04-01 | 2011-04-01 | Semiconductor device having metal gate and fabricating method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201241881A TW201241881A (en) | 2012-10-16 |
TWI562211B true TWI562211B (en) | 2016-12-11 |
Family
ID=47600198
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW100111682A TWI562211B (en) | 2011-04-01 | 2011-04-01 | Semiconductor device having metal gate and fabricating method thereof |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI562211B (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040132296A1 (en) * | 2002-08-26 | 2004-07-08 | Chartered Semiconductor Manufacturing Ltd. | Methods to form dual metal gates by incorporating metals and their conductive oxides |
US20080001202A1 (en) * | 2006-06-30 | 2008-01-03 | Schaeffer James K | A method of making metal gate transistors |
US20100127336A1 (en) * | 2008-11-21 | 2010-05-27 | Texas Instruments Incorporated | Structure and method for metal gate stack oxygen concentration control using an oxygen diffusion barrier layer and a sacrificial oxygen gettering layer |
-
2011
- 2011-04-01 TW TW100111682A patent/TWI562211B/en active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040132296A1 (en) * | 2002-08-26 | 2004-07-08 | Chartered Semiconductor Manufacturing Ltd. | Methods to form dual metal gates by incorporating metals and their conductive oxides |
US20080001202A1 (en) * | 2006-06-30 | 2008-01-03 | Schaeffer James K | A method of making metal gate transistors |
US20100127336A1 (en) * | 2008-11-21 | 2010-05-27 | Texas Instruments Incorporated | Structure and method for metal gate stack oxygen concentration control using an oxygen diffusion barrier layer and a sacrificial oxygen gettering layer |
Also Published As
Publication number | Publication date |
---|---|
TW201241881A (en) | 2012-10-16 |
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