TWI562211B - Semiconductor device having metal gate and fabricating method thereof - Google Patents

Semiconductor device having metal gate and fabricating method thereof

Info

Publication number
TWI562211B
TWI562211B TW100111682A TW100111682A TWI562211B TW I562211 B TWI562211 B TW I562211B TW 100111682 A TW100111682 A TW 100111682A TW 100111682 A TW100111682 A TW 100111682A TW I562211 B TWI562211 B TW I562211B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
metal gate
fabricating method
fabricating
gate
Prior art date
Application number
TW100111682A
Other languages
Chinese (zh)
Other versions
TW201241881A (en
Inventor
Guang Yaw Hwang
Chun Hsien Lin
Hung Ling Shih
Jiunn Hsiung Liao
Zhi Cheng Lee
Shao Hua Hsu
Yi Wen Chen
cheng guo Chen
Jung Tsung Tseng
Chien Ting Lin
Tong Jyun Huang
jie ning Yang
Tsung Lung Tsai
Po Jui Liao
Chien Ming Lai
Ying Tsung Chen
Cheng Yu Ma
Wen Han Hung
Che Hua Hsu
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW100111682A priority Critical patent/TWI562211B/en
Publication of TW201241881A publication Critical patent/TW201241881A/en
Application granted granted Critical
Publication of TWI562211B publication Critical patent/TWI562211B/en

Links

TW100111682A 2011-04-01 2011-04-01 Semiconductor device having metal gate and fabricating method thereof TWI562211B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW100111682A TWI562211B (en) 2011-04-01 2011-04-01 Semiconductor device having metal gate and fabricating method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW100111682A TWI562211B (en) 2011-04-01 2011-04-01 Semiconductor device having metal gate and fabricating method thereof

Publications (2)

Publication Number Publication Date
TW201241881A TW201241881A (en) 2012-10-16
TWI562211B true TWI562211B (en) 2016-12-11

Family

ID=47600198

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100111682A TWI562211B (en) 2011-04-01 2011-04-01 Semiconductor device having metal gate and fabricating method thereof

Country Status (1)

Country Link
TW (1) TWI562211B (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040132296A1 (en) * 2002-08-26 2004-07-08 Chartered Semiconductor Manufacturing Ltd. Methods to form dual metal gates by incorporating metals and their conductive oxides
US20080001202A1 (en) * 2006-06-30 2008-01-03 Schaeffer James K A method of making metal gate transistors
US20100127336A1 (en) * 2008-11-21 2010-05-27 Texas Instruments Incorporated Structure and method for metal gate stack oxygen concentration control using an oxygen diffusion barrier layer and a sacrificial oxygen gettering layer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040132296A1 (en) * 2002-08-26 2004-07-08 Chartered Semiconductor Manufacturing Ltd. Methods to form dual metal gates by incorporating metals and their conductive oxides
US20080001202A1 (en) * 2006-06-30 2008-01-03 Schaeffer James K A method of making metal gate transistors
US20100127336A1 (en) * 2008-11-21 2010-05-27 Texas Instruments Incorporated Structure and method for metal gate stack oxygen concentration control using an oxygen diffusion barrier layer and a sacrificial oxygen gettering layer

Also Published As

Publication number Publication date
TW201241881A (en) 2012-10-16

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