TWI560875B - Semiconductor device and method of manufacturing the same - Google Patents
Semiconductor device and method of manufacturing the sameInfo
- Publication number
- TWI560875B TWI560875B TW104138202A TW104138202A TWI560875B TW I560875 B TWI560875 B TW I560875B TW 104138202 A TW104138202 A TW 104138202A TW 104138202 A TW104138202 A TW 104138202A TW I560875 B TWI560875 B TW I560875B
- Authority
- TW
- Taiwan
- Prior art keywords
- manufacturing
- same
- semiconductor device
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW104138202A TWI560875B (en) | 2015-11-19 | 2015-11-19 | Semiconductor device and method of manufacturing the same |
CN201610019479.2A CN106783629B (en) | 2015-11-19 | 2016-01-13 | Semiconductor device and method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW104138202A TWI560875B (en) | 2015-11-19 | 2015-11-19 | Semiconductor device and method of manufacturing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI560875B true TWI560875B (en) | 2016-12-01 |
TW201719893A TW201719893A (en) | 2017-06-01 |
Family
ID=58227203
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW104138202A TWI560875B (en) | 2015-11-19 | 2015-11-19 | Semiconductor device and method of manufacturing the same |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN106783629B (en) |
TW (1) | TWI560875B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI635611B (en) * | 2017-09-25 | 2018-09-11 | 新唐科技股份有限公司 | High voltage semiconductor device |
CN109742020B (en) * | 2018-12-26 | 2021-09-28 | 芜湖启迪半导体有限公司 | Gate oxide structure of silicon carbide device and preparation method thereof |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4602266A (en) * | 1983-01-28 | 1986-07-22 | U.S. Philips Corporation | High voltage guard ring with variable width shallow portion |
US20080074165A1 (en) * | 2004-04-27 | 2008-03-27 | Fairchild Korea Semiconductor, Ltd. | High voltage gate driver integrated circuit including high voltage junction capacitor and high voltage ldmos transistor |
US20130341718A1 (en) * | 2012-06-26 | 2013-12-26 | Fairchild Korea Semiconductor Ltd. | Power semiconductor device |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100374627B1 (en) * | 2000-08-04 | 2003-03-04 | 페어차일드코리아반도체 주식회사 | High voltage semiconductor device having a high breakdown voltage isolation region |
CN101764153B (en) * | 2008-12-26 | 2013-03-27 | 新唐科技股份有限公司 | Laterally diffused metal oxide semiconductor element |
-
2015
- 2015-11-19 TW TW104138202A patent/TWI560875B/en active
-
2016
- 2016-01-13 CN CN201610019479.2A patent/CN106783629B/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4602266A (en) * | 1983-01-28 | 1986-07-22 | U.S. Philips Corporation | High voltage guard ring with variable width shallow portion |
US20080074165A1 (en) * | 2004-04-27 | 2008-03-27 | Fairchild Korea Semiconductor, Ltd. | High voltage gate driver integrated circuit including high voltage junction capacitor and high voltage ldmos transistor |
US20130341718A1 (en) * | 2012-06-26 | 2013-12-26 | Fairchild Korea Semiconductor Ltd. | Power semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
TW201719893A (en) | 2017-06-01 |
CN106783629A (en) | 2017-05-31 |
CN106783629B (en) | 2019-11-01 |
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