TWI560853B - Cell contact structure - Google Patents
Cell contact structureInfo
- Publication number
- TWI560853B TWI560853B TW104130371A TW104130371A TWI560853B TW I560853 B TWI560853 B TW I560853B TW 104130371 A TW104130371 A TW 104130371A TW 104130371 A TW104130371 A TW 104130371A TW I560853 B TWI560853 B TW I560853B
- Authority
- TW
- Taiwan
- Prior art keywords
- contact structure
- cell contact
- cell
- contact
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
- H01L23/5283—Cross-sectional geometry
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW104130371A TWI560853B (en) | 2015-09-15 | 2015-09-15 | Cell contact structure |
CN201610170103.1A CN106549018B (en) | 2015-09-15 | 2016-03-23 | Cell contact structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW104130371A TWI560853B (en) | 2015-09-15 | 2015-09-15 | Cell contact structure |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI560853B true TWI560853B (en) | 2016-12-01 |
TW201711169A TW201711169A (en) | 2017-03-16 |
Family
ID=58227201
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW104130371A TWI560853B (en) | 2015-09-15 | 2015-09-15 | Cell contact structure |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN106549018B (en) |
TW (1) | TWI560853B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107546226A (en) * | 2017-09-29 | 2018-01-05 | 睿力集成电路有限公司 | Memory and its manufacture method |
CN110534515B (en) * | 2018-05-24 | 2024-07-09 | 长鑫存储技术有限公司 | Manufacturing method for reducing unit contact defect and semiconductor memory |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201203521A (en) * | 2010-07-15 | 2012-01-16 | Hynix Semiconductor Inc | Semiconductor device and method for fabricating the same |
TW201316490A (en) * | 2011-05-27 | 2013-04-16 | Elpida Memory Inc | Semiconductor device and method of forming the same |
TW201501305A (en) * | 2013-02-07 | 2015-01-01 | Ps4 Luxco Sarl | Semiconductor device and method of manufacturing the same |
TW201501307A (en) * | 2013-02-18 | 2015-01-01 | Ps4 Luxco Sarl | Semiconductor device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100474737B1 (en) * | 2002-05-02 | 2005-03-08 | 동부아남반도체 주식회사 | Dram fabrication capable of high integration and fabrication method |
JP2013197551A (en) * | 2012-03-22 | 2013-09-30 | Toshiba Corp | Semiconductor device and manufacturing method thereof |
KR101929478B1 (en) * | 2012-04-30 | 2018-12-14 | 삼성전자주식회사 | Semiconductor Device Having a Buried Channel Array |
TW201503366A (en) * | 2013-07-08 | 2015-01-16 | Anpec Electronics Corp | Trench type semiconductor power device and fabrication method thereof |
-
2015
- 2015-09-15 TW TW104130371A patent/TWI560853B/en active
-
2016
- 2016-03-23 CN CN201610170103.1A patent/CN106549018B/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201203521A (en) * | 2010-07-15 | 2012-01-16 | Hynix Semiconductor Inc | Semiconductor device and method for fabricating the same |
TW201316490A (en) * | 2011-05-27 | 2013-04-16 | Elpida Memory Inc | Semiconductor device and method of forming the same |
TW201501305A (en) * | 2013-02-07 | 2015-01-01 | Ps4 Luxco Sarl | Semiconductor device and method of manufacturing the same |
TW201501307A (en) * | 2013-02-18 | 2015-01-01 | Ps4 Luxco Sarl | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
CN106549018B (en) | 2020-04-07 |
CN106549018A (en) | 2017-03-29 |
TW201711169A (en) | 2017-03-16 |
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