TWI560753B - - Google Patents
Info
- Publication number
- TWI560753B TWI560753B TW104114121A TW104114121A TWI560753B TW I560753 B TWI560753 B TW I560753B TW 104114121 A TW104114121 A TW 104114121A TW 104114121 A TW104114121 A TW 104114121A TW I560753 B TWI560753 B TW I560753B
- Authority
- TW
- Taiwan
Links
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510107483.XA CN106033729B (zh) | 2015-03-11 | 2015-03-11 | FinFET的掺杂方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201633381A TW201633381A (zh) | 2016-09-16 |
| TWI560753B true TWI560753B (zh) | 2016-12-01 |
Family
ID=57151084
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104114121A TW201633381A (zh) | 2015-03-11 | 2015-05-04 | ＦｉｎＦＥＴ的摻雜方法 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN106033729B (zh) |
| TW (1) | TW201633381A (zh) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050227435A1 (en) * | 2004-04-12 | 2005-10-13 | Samsung Electronics Co., Ltd. | Non-volatile memory devices and method for forming the same |
| US20090184358A1 (en) * | 2007-12-20 | 2009-07-23 | Interuniversitair Microelektronica Centrum Vzw (Imec) | Method for fabricating a semiconductor device and the semiconductor device made thereof |
| US20140138780A1 (en) * | 2012-11-21 | 2014-05-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Finfet having uniform doping profile and method of forming the same |
| TW201436212A (zh) * | 2013-03-08 | 2014-09-16 | Taiwan Semiconductor Mfg | 積體電路元件及其製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101789447A (zh) * | 2009-01-23 | 2010-07-28 | 中芯国际集成电路制造(上海)有限公司 | Mos晶体管及其形成方法 |
| US8202792B2 (en) * | 2009-04-24 | 2012-06-19 | Varian Semiconductor Equipment Associates, Inc. | Method of processing a substrate having a non-planar surface |
| US8679960B2 (en) * | 2009-10-14 | 2014-03-25 | Varian Semiconductor Equipment Associates, Inc. | Technique for processing a substrate having a non-planar surface |
| US8778603B2 (en) * | 2010-03-15 | 2014-07-15 | Varian Semiconductor Equipment Associates, Inc. | Method and system for modifying substrate relief features using ion implantation |
| US20120213941A1 (en) * | 2011-02-22 | 2012-08-23 | Varian Semiconductor Equipment Associates, Inc. | Ion-assisted plasma treatment of a three-dimensional structure |
| CN103632970B (zh) * | 2012-08-22 | 2016-04-13 | 上海华虹宏力半导体制造有限公司 | 抑制nmos器件的双峰效应的方法 |
-
2015
- 2015-03-11 CN CN201510107483.XA patent/CN106033729B/zh active Active
- 2015-05-04 TW TW104114121A patent/TW201633381A/zh unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050227435A1 (en) * | 2004-04-12 | 2005-10-13 | Samsung Electronics Co., Ltd. | Non-volatile memory devices and method for forming the same |
| US20090184358A1 (en) * | 2007-12-20 | 2009-07-23 | Interuniversitair Microelektronica Centrum Vzw (Imec) | Method for fabricating a semiconductor device and the semiconductor device made thereof |
| US20140138780A1 (en) * | 2012-11-21 | 2014-05-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Finfet having uniform doping profile and method of forming the same |
| TW201436212A (zh) * | 2013-03-08 | 2014-09-16 | Taiwan Semiconductor Mfg | 積體電路元件及其製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201633381A (zh) | 2016-09-16 |
| CN106033729B (zh) | 2019-04-02 |
| CN106033729A (zh) | 2016-10-19 |