TWI559331B - A conductive material for forming flexible transparent conductive film - Google Patents

Description

Conductive material for forming flexible transparent conductive film

The present invention relates to a transparent conductive film, and more particularly to a flexible transparent conductive film and a flexible transparent display structure and method for forming the same.

The dispersion formed of poly 3,4-ethylenedioxythiophene (PEDT) and polystyrenesulfonic acid (PSS) is called poly(3,4-ethylenedioxythiophene (PEDOT), polystyrenesulfonic acid). The role is to maintain the solubility and stability of poly 3,4-ethylenedioxythiophene in solution. In addition, poly 3,4-ethylenedioxythiophene (PEDT) is polymerized in the presence of polystyrenesulfonic acid (PSS), which is simultaneously doped and oxidized during polymerization to form a poly(3,4-ethylenedioxy) group. Thiophene, which results in the formation of a charged polymer that conducts holes.

In the known LED architecture, the material used for the conductive transparent polymer layer is a mixture of poly 3,4-ethylenedioxythiophene and polystyrenesulfonic acid (PEDOT:PSS), however, poly 3,4- The transparency of the mixture of ethylenedioxythiophene and polystyrenesulfonic acid (PEDOT:PSS) is not optimal, even dark blue, and itself is quite lack of wear resistance. Mechanical properties, so it must be coated on a hard substrate, usually using ITO as its substrate to support its mechanical properties. For the current industry, the scope of application of these prior technologies is insufficient to meet the needs of today's life, especially for the needs of flexibility. Although the prior art uses suitable transparent and flexible synthetic resins such as polyamide, polyethylene terephthalate, polycarbonate, polyethylene, and polyvinyl chloride as flexible substrates, however, Since a hard material such as ITO is often used as an electrode substrate, such a flexible substrate cannot achieve true flexibility. In addition, the application of transparent properties is also a major focus. As mentioned above, although poly 3,4-ethylenedioxythiophene itself has good electrical conductivity, its transparency is insufficient, and it has a resistance value. The drifting characteristics cause instability, which cannot be replaced by ITO and is further applied to the industry, but ITO lacks flexibility. Therefore, how to form a transparent flexible display structure of a light-emitting diode is still an important target for the current industry.

In view of the above-mentioned background of the invention, in order to meet the special needs of the industry, the present invention provides a flexible transparent conductive film and a display structure and method for forming the same, which can be used to solve the above-mentioned conventional art.

An object of the present invention is to provide a conductive material of a mixture of poly(3,4-ethylenedioxythiophene) and polystyrenesulfonic acid (PEDOT:PSS)/graphite structure/cerium oxide to form a flexible transparent conductive film. Wherein, the above graphite structure is used for reducing the resistance value, stabilizing the impedance, increasing the environmental stability (such as temperature resistance and moisture resistance), and the niobium oxide is used to increase the adhesion of the conductive material to avoid deflection or friction. The damage caused by the surface material of the conductive film causes the resistance to drift. Accordingly, the flexible transparent conductive film formed by the conductive material of the present invention is not only flexible, has clearer transparency, high conductivity, low resistance and stability, and is more wear resistant and highly adhesive. Mechanical properties.

Another object of the present invention is to form a transparent conductive layer by using a conductive material, thereby forming a flexible transparent display structure of a light-emitting diode, which is flexible, highly transparent, wear resistant, high in conduction, stable in resistance, etc. Its characteristics, so it can be widely used in the commercial and industrial of light-emitting diodes to achieve the important target of the industry's urgent development.

In accordance with the above objects of the present invention, the present invention provides an electrically conductive material comprising a mixture of poly(3,4-ethylenedioxythiophene) and polystyrenesulfonic acid; a graphite structure; and an antimony oxide. Wherein the mixture of the above poly(3,4-ethylenedioxythiophene) and polystyrenesulfonic acid accounts for about 30% to 70% of the conductive material, and the graphite structure accounts for the conductive material. 15%~35%, the bismuth oxide accounts for 15%~35% of the conductive material, and the mixture of poly 3,4-ethylenedioxythiophene and polystyrene sulfonic acid preferably ranges from about 50%~ 60%, and the graphite structure preferably ranges from about 20% to 25%, and the niobium oxide preferably ranges from about 20% to 25%, wherein the graphite structure further comprises a graphene.

The conductive material according to the present invention may be used to form a flexible transparent conductive film, and the method for forming the flexible transparent conductive film comprises performing a coating process to coat the conductive material on a surface of a flexible transparent substrate. And performing a curing process to form the flexible transparent conductive film on the surface of the flexible transparent substrate.

According to the above object of the present invention, the present invention provides a light emitting diode display structure, the light emitting diode display structure comprising at least one transparent substrate; at least one first transparent conductive region and at least one second transparent conductive region, and The at least one first transparent conductive region and the at least one second transparent conductive region are orthogonal to each other in the spatial direction, and form at least one spatial intersection in the space; and the at least one light emitting diode, the at least one light emitting diode The electrode system is electrically coupled to the first transparent conductive region and the at least one second transparent conductive region, wherein the material of the at least one transparent substrate further comprises a polyethylene terephthalate (PET). The at least one first transparent conductive region and the at least one second transparent conductive region are formed by a conductive material The conductive material further comprises a PEDOT:PSS, a graphite structure and a tantalum oxide, and the PEDOT:PSS accounts for about 30%~70% of the conductive material, and the graphite structure accounts for about 15%~35 of the conductive material. %, and the niobium oxide accounts for about 15% to 35% of the conductive material, the preferred range of the PEDOT:PSS is 50% to 60%, and the preferred range of the graphite structure is 20% to 25%. And the preferred range of the niobium oxide is 20% to 25%, and the graphite structure further comprises a graphene.

The light emitting diode display structure further includes at least one transparent substrate having a first transparent substrate and a second transparent substrate; and an accommodating space on the first surface of the first transparent substrate Between the second surface of the second transparent substrate, and the at least one first transparent conductive region and the at least one second transparent conductive region respectively located in the accommodating space facing the first transparent substrate The first surface and the second surface of the second transparent substrate, wherein the space intersection is located in the accommodating space, and the at least one illuminating diode system is located at the intersection of the space, the accommodating space Further, a transparent insulating layer is filled therein.

According to the above-mentioned light-emitting diode display structure of the present invention, the light-emitting diode display structure further includes the at least one transparent substrate having a first transparent substrate and a second transparent substrate, and the at least one first transparent conductive a region on a first surface of the first transparent substrate, wherein the first surface An accommodating space is formed between a second surface of one of the second transparent substrates and the third surface of the first transparent substrate, wherein The space intersection is located in the accommodating space; the at least one third transparent conductive region and the at least one second transparent conductive region are located on the second surface of the second transparent substrate in the accommodating space; the at least one The light emitting diode is located on the second surface of the second transparent substrate between the at least one third transparent conductive region and the at least one second transparent conductive region, wherein the at least one light emitting diode (LED) The two electrodes are electrically coupled to the at least one third transparent conductive region and the at least one second transparent conductive region respectively; and the at least one channel sequentially passes through the at least one first transparent conductive region and the first The transparent substrate is opposite to the at least one third transparent conductive region, so that the at least one first transparent conductive region and the at least one third transparent conductive region are electrically coupled by the at least one channel, at least one of the foregoing Three transparent conductive regions and the The second transparent conductive region is staggered in an adjacent manner, and the at least one third transparent conductive region is consistent with the number of the at least one light emitting diode, wherein the accommodating space further comprises a transparent insulating layer. And the at least one channel also penetrates the transparent insulating layer, wherein the channel further comprises a conductive filler.

According to the above-mentioned light emitting diode display structure of the present invention, the light emitting diode display structure further includes the at least one first transparent conductive region located at the One of the first surfaces of the transparent substrate is opposite to the second surface of the at least one transparent substrate; the at least one third transparent conductive region and the at least one second transparent conductive region And the at least one transparent substrate is disposed on the second surface of the at least one transparent substrate; the at least one light emitting diode is located in the gap between the at least one third transparent conductive region and the at least one second transparent conductive region On the second surface, the two electrodes of the at least one light emitting diode are electrically coupled to the at least one third transparent conductive region and the at least one second transparent conductive region respectively; and at least one channel, the at least one channel The at least one first transparent conductive region, the transparent substrate and the at least one third transparent conductive region are sequentially penetrated to facilitate the at least one first transparent conductive region and the at least one third transparent conductive region by the at least one The channel is electrically coupled, and the at least one third transparent conductive region and the at least one second transparent conductive region are staggered in an adjacent manner, and the at least one third transparent conductive region and the at least one light emitting diode Equal to the number, wherein the above channel further comprises a conductive filler.

According to the above-mentioned light emitting diode display structure of the present invention, the LED display structure further includes the at least one first transparent conductive region on a first surface of the at least one transparent substrate, and the at least one second transparent The conductive region is located on a second surface of the at least one transparent substrate, wherein the first surface is opposite to the second surface; the at least one light emitting diode is located on the at least one second transparent conductive region, and One electrode of the at least one light emitting diode is electrically coupled to the at least one second transparent conductive region; At least one channel, the at least one channel sequentially passes through the at least one first transparent conductive region and the transparent substrate, and is located beside the at least one second transparent conductive region to facilitate another of the at least one light emitting diode The electrode is electrically coupled to the at least one first transparent conductive region by the at least one channel, wherein the second surface has at least one transparent insulating layer at the position of the at least one channel, and the at least one channel also penetrates the At least one transparent insulating layer.

According to the above object of the present invention, the present invention provides a method for forming a light emitting diode display structure, the method for forming a light emitting diode display structure comprising forming a first transparent conductive layer on a specific surface of at least one transparent substrate a second transparent conductive layer; respectively performing a lithography process on the first transparent conductive layer and the second transparent conductive layer to convert into a specific pattern and respectively forming at least one first transparent conductive region and at least one second transparent conductive And arranging at least one first transparent conductive region and at least one second transparent conductive region in the spatial direction to form at least one spatial intersection in the space; forming at least one light emitting diode and making at least one light emitting diode The body is electrically coupled to the at least one first transparent conductive region and the at least one second transparent conductive region, and the material of the first transparent substrate and the second transparent substrate further comprises a polyethylene terephthalate, The first transparent conductive layer and the second transparent conductive layer are formed by a conductive material, and the conductive material further comprises a mixture of poly(3,4-ethylenedioxythiophene) and polystyrenesulfonic acid. a graphite structure and a bismuth oxide, the above mixture of poly(3,4-ethylenedioxythiophene and polystyrene sulfonic acid accounts for about 30% to 70% of the conductive material, and the graphite structure occupies about the conductive material 15%~35%, bismuth oxide accounts for 15%~35% of conductive material, and mixture of poly(3,4-ethylenedioxythiophene and polystyrene sulfonic acid preferably ranges from about 50% to 60%, and The preferred range of the graphite structure is about 20% to 25%, and the preferred range of the cerium oxide is about 20% to 25%. The graphite structure described above further comprises a graphene.

According to the method for forming a light-emitting diode display structure of the present invention, the method for forming a light-emitting diode display structure further comprises the at least one transparent substrate having a first transparent substrate and a second transparent substrate; a first transparent conductive layer and a second transparent conductive layer on the surface of the first transparent substrate and the second transparent substrate; respectively performing a lithography process on the first transparent conductive layer and the second transparent conductive layer Converting into a specific pattern and separately forming the at least one first transparent conductive region and the at least one second transparent conductive region on the first transparent substrate and the second transparent substrate; performing an implantation process to form the at least a light emitting diode on the at least one first transparent conductive region of the first transparent substrate; and performing a one-way bonding process to bond the first transparent substrate and the second transparent substrate to form a Storing a space therein, and positioning the at least one spatial intersection point in the accommodating space, so that the pair of at least one light emitting diode pair is located at the intersection of the space on. The forming method further includes an insulating process for filling a transparent insulating layer in the accommodating space, and a positioning step to form at least one of the at least one second transparent conductive region at a position opposite to the at least one light emitting diode. a recessed hole to accommodate the at least one light emitting diode.

According to the method for forming a light-emitting diode display structure of the present invention, the method for forming a light-emitting diode display structure further comprises the at least one transparent substrate having a first transparent substrate and a second transparent substrate; a first transparent conductive layer and a second transparent conductive layer on the surface of the first transparent substrate and the second transparent substrate; respectively performing a lithography process on the first transparent conductive layer and the second transparent conductive layer Converting into a specific pattern and separately forming the at least one first transparent conductive region on the first transparent substrate and forming the at least one second transparent conductive region and the at least one third transparent conductive region on the second transparent substrate And performing an implantation process to form a surface of the second transparent substrate of the at least one light emitting diode on the gap between the at least one third transparent conductive region and the at least one second transparent conductive region, wherein The two electrodes of the at least one light emitting diode are electrically coupled to the at least one third transparent conductive region and the at least one second transparent conductive region respectively; performing a channel process to sequentially penetrate the at least one first transparent conductive Forming at least one channel with the first transparent substrate, and the at least one channel position is opposite to the position of the at least one third transparent conductive region to facilitate the at least one first transparent conductive region and the at least one third transparent conductive region By The at least one channel is electrically coupled to form a accommodating space, and the accommodating space is formed to form a accommodating space, and the accommodating space is formed. The at least one spatial intersection is formed in the accommodating space, and the at least one channel pair is located at the at least one spatial intersection. The method for forming a light emitting diode display structure further includes an insulating process for filling a transparent insulating layer in the accommodating space, wherein the at least one third transparent conductive region is opposite to the at least one second transparent conductive region The adjacent spacers are staggered, and the at least one third transparent conductive region is consistent with the number of the at least one light emitting diode. The forming method further includes an electrical conduction process to fill a conductive material in the channel.

The method for forming a light emitting diode display structure further includes forming a first transparent conductive layer and a second transparent conductive layer on one of the first surface and the second surface of the at least one transparent substrate, wherein The surface and the second surface are opposite to each other; the first transparent conductive layer and the second transparent conductive layer are respectively subjected to a lithography process to be converted into a specific pattern and respectively formed into the at least one first transparent conductive region The first surface of the transparent substrate and the at least one second transparent conductive region and the at least one third transparent conductive region on the second surface of the at least one transparent substrate; performing a channel process to sequentially penetrate the at least a first transparent conductive region, the at least one transparent substrate and the at least one third transparent conductive region and forming at least one channel to facilitate the at least one first transparent conductive region and the Between the third transparent conductive region and the at least one second conductive conductive region; The at least one light emitting diode is electrically coupled to the at least one third transparent conductive region and the at least one second transparent conductive region, respectively, on the second surface of the at least one transparent substrate. The at least one third transparent conductive region and the at least one second transparent conductive region are staggered in an adjacent manner, and the at least one third transparent conductive region is consistent with the number of the at least one light emitting diode. The method for forming the LED display structure further includes an electrical conduction process to fill a conductive material in the at least one channel. The order of execution of the above-described implant program and the channel program can be changed as needed.

According to the method for forming a light-emitting diode display structure of the present invention, the method for forming the light-emitting diode display structure further comprises separately forming the first transparent conductive layer and the second transparent conductive layer on the at least one transparent substrate. a first surface and a second surface, wherein the first surface and the second surface are opposite surfaces; respectively performing a lithography process on the first transparent conductive layer and the second transparent conductive layer Converting into a specific pattern and respectively forming at least one first transparent conductive region on the first surface of the at least one transparent substrate and forming at least one second transparent conductive region on the second surface of the at least one transparent substrate; a channel process for sequentially conducting the at least one first transparent conductive region and the at least one transparent substrate Forming at least one channel at a position beside the at least one second transparent conductive region; and performing an implantation process to form at least one light emitting diode on the at least one second transparent conductive region, and causing the at least one light emitting One of the electrodes of the polar body is electrically coupled to the at least one second transparent conductive region, and the other electrode of the at least one light emitting diode is electrically coupled to the at least one first transparent conductive region by the at least one channel. The forming method further includes an electrical conduction process to fill a conductive material in the at least one channel. The execution sequence of the implanting program and the channel program may be changed according to requirements. Before the channel program is performed, an insulating process may be performed to form at least one transparent dielectric layer between the at least one second transparent conductive region. The second surface of the transparent substrate, wherein the at least one channel sequentially penetrates the at least one first transparent conductive region, the transparent substrate and the transparent dielectric layer.

The present invention is directed to a light-emitting diode display structure. In order to fully understand the present invention, detailed structures, elements, and method steps are set forth in the following description. Obviously, the practice of the present invention is not limited to the specific details familiar to those skilled in the art of light-emitting diodes. On the other hand, well-known structures and elements thereof are not described in detail to avoid unnecessary limitation of the invention. In addition, in order to provide a clearer description and to enable those skilled in the art to understand the invention. The parts in the illustrations are not drawn according to their relative dimensions. The ratio of some dimensions to other related scales will be highlighted and exaggerated, and the irrelevant details are not fully drawn for the sake of simplicity. The preferred embodiments of the present invention are described in detail below, but the present invention may be widely practiced in other embodiments and the scope of the present invention is not limited by the scope of the appended claims.

According to a first embodiment of the present invention, with reference to the first figure, the present invention provides a flexible transparent conductive film 100 and a forming method. First, a conductive material 105 is provided. The conductive material 105 includes a PEDOT:PSS, a Graphite structure and monoterpene oxide, the above PEDOT:PSS is a mixture of poly 3,4-ethylenedioxythiophene and polystyrenesulfonic acid, which accounts for 30%~70% of the conductive material 105, which is preferably The range is about 50% to 60%; and the graphite structure further comprises a graphene (Graphene), and the graphite structure accounts for about 15% to 35% of the conductive material 105, preferably in the range of about 20% to 25%; The oxide is about 15% to 35% of the conductive material 105, and the preferred range is about 20% to 25%. Next, a coating process 110 is performed to coat the conductive material 105 on the surface of a flexible transparent substrate 115. The substrate 115 further comprises a polyethylene terephthalate (PET). Then, a curing process 120 is performed to form the flexible transparent conductive film 100 on the surface of the substrate.

According to a second embodiment of the present invention, with reference to the second A and second B, the present invention provides a light emitting diode display structure 200 and a method of forming the same, first providing a first transparent substrate 205A and a The second transparent substrate 205B, the material of the first transparent substrate 205A and the second transparent substrate 205B further comprise a polyethylene terephthalate. Then, a coating process 210 is performed to facilitate coating a conductive material 215 on the surfaces of the first transparent substrate 205A and the second transparent substrate 205B, respectively, wherein the conductive material 215 comprises a PEDOT:PSS, a graphite structure. With a bismuth oxide. The above PEDOT:PSS is a mixture of poly 3,4-ethylenedioxythiophene and polystyrenesulfonic acid, which accounts for 30%~70% of the conductive material 215, and preferably ranges from about 50% to 60%. And the graphite structure further comprises a graphene, the graphite structure accounts for about 15% to 35% of the conductive material 215, and preferably ranges from about 20% to 25%; and the above-mentioned tantalum oxide accounts for about 15% of the conductive material 215. %~35%, its preferred range is about 20%~25%.

Then, a curing process 220 is performed on the conductive material 215 coated on the first transparent substrate 205A and the second transparent substrate 205B to form a first transparent conductive layer 225A and a second transparent conductive layer 225B, respectively. The surface of the transparent substrate 205A and the second transparent substrate 205B, wherein the curing process 220 further comprises a baking step. after that, The first transparent conductive layer 225A and the second transparent conductive layer 225B respectively perform a lithography process 230 to convert the first transparent conductive layer 225A and the second transparent conductive layer 225B into a specific pattern and respectively form at least one first transparent conductive The 235A and the at least one second transparent conductive region 235B are disposed on the first transparent substrate 205A and the second transparent substrate 205B, wherein the lithography process 230 further comprises an etching step.

Then, an implantation process 240 is performed to form at least one light emitting diode 245 on at least one first transparent conductive region 235A of the first transparent substrate 205A. Thereafter, an insulating process 250 is performed to form a transparent insulating layer 255 on at least one second transparent conductive region 235B of the second transparent substrate 205B, wherein the insulating process 250 further includes a positioning step to facilitate at least one light emitting diode A hole is formed in a relative position of 245 to accommodate at least one light emitting diode 245, and the transparent insulating layer 255 is an optical insulating paste (OCA).

Thereafter, a one-way bonding process 260 is performed to facilitate bonding the at least one light emitting diode (LED) 245 of the first transparent substrate 205A and the transparent insulating layer 255 of the second transparent substrate 205B, wherein at least one A transparent conductive region 235A and at least one second transparent conductive region 235B are orthogonal to each other in the spatial direction, and at least one spatial intersection is formed in the space, and at least one light emitting diode (LED) 245 is located at a spatial intersection, and The two electrodes of the at least one light emitting diode (LED) 245 are electrically coupled to the at least one first transparent conductive region 235A and the at least one second transparent conductive region 235B, thereby forming the light emitting diode display structure 200, such as the second Figure C shows. Finally, a protective process 270 is performed to form a transparent protective layer 275 on the entire surface of the LED display structure 200. The material of the transparent protective layer 275 further includes a PU.

According to a third embodiment of the present invention, with reference to the third A and third B, the present invention provides a light emitting diode display structure 300 and a method for forming the same, first providing a first transparent substrate 305A and a The second transparent substrate 305B, wherein the material of the first transparent substrate 305A and the second transparent substrate 305B further comprises a polyethylene terephthalate. Then, a coating process 310 is respectively performed to facilitate coating a conductive material 315 on one surface of the first transparent substrate 305A and the second transparent substrate 305B, respectively, wherein the conductive material 315 comprises a PEDOT:PSS, a graphite. Structure with a bismuth oxide. The above PEDOT:PSS is a mixture of poly 3,4-ethylenedioxythiophene and polystyrenesulfonic acid, which accounts for 30%~70% of the conductive material 315, and preferably ranges from about 50% to 60%. And the graphite structure further comprises a graphene, the graphite structure accounts for about 15% to 35% of the conductive material 315, and preferably ranges from about 20% to 25%; and the above-mentioned tantalum oxide accounts for about 15% of the conductive material 315. %~35%, its preferred range is about 20%~25%.

Then, a curing process 320 is performed on the conductive material 315 coated on the first transparent substrate 305A and the second transparent substrate 305B to form a first transparent conductive layer 325A and a second transparent conductive layer 325B, respectively. The surface of the transparent substrate 305A and the second transparent substrate 305B, wherein the curing process 320 further comprises a baking step. Thereafter, the first transparent conductive layer 325A and the second transparent conductive layer 325B respectively perform a lithography process 330 to convert the first transparent conductive layer 325A and the second transparent conductive layer 325B into a specific pattern and respectively form at least one first The transparent conductive region 335A is disposed on the first transparent substrate 305A, and the at least one second transparent conductive region 335B and the at least one third transparent conductive region 335C are formed on the second transparent substrate 305B, wherein the lithography process 330 further comprises an etch. And the at least one third transparent conductive region 335C is staggered with the at least one second transparent conductive region 335B in an adjacent interval, as shown in FIG.

Then, an implantation process 340 is performed to form a surface of the second transparent substrate 305B of the at least one light emitting diode 345 on the gap between the at least one third transparent conductive region 335C and the at least one second transparent conductive region 335B, wherein The two electrodes of the at least one LED 345 are electrically coupled to the at least one third transparent conductive region 335C and the at least one second transparent conductive region 335B. Thereafter, an insulation process 350 is performed to form a The transparent insulating layer 355 is on the other surface of the first transparent substrate 305A, wherein the transparent insulating layer 355 is an optical insulating glue. Next, a channel process 360 is performed to sequentially pass through at least one first transparent conductive region 335A, the first transparent substrate 305A and the transparent insulating layer 355 to form a channel 365, wherein the position of the channel 365 needs to be at least a third transparent The conductive regions 335C are positioned opposite each other.

Thereafter, a one-way bonding process 370 is performed to facilitate bonding of the transparent insulating layer 355 of the first transparent substrate 305A and the at least one light emitting diode 345 of the second transparent substrate 305B, wherein the first transparent conductive region 335A and The second transparent conductive region 335B is orthogonally formed in the spatial direction, and the first transparent conductive region 335A and the third transparent conductive region 335C form at least one spatial intersection point in the space, and the position of the channel 365 is located at the at least one spatial intersection. Next, an electrical conduction process 380 is performed to turn on the first transparent conductive region 335A and the third transparent conductive region 335C, wherein the electrical continuity program 380 further includes a filling step to fill the conductive material 385 in the channel 365, and the conductive material Can be silver glue. Finally, a protective process 390 is performed to form a transparent protective layer 395 on the entire surface, and thereby forming the LED display structure 300, wherein the material of the transparent protective layer 395 further comprises a PU.

According to a fourth embodiment of the present invention, with reference to the fourth A and fourth B, the present invention provides a light emitting diode display structure 400 and a method of forming the same, first providing a transparent substrate 405, wherein, transparent The material of the substrate 405 further comprises a polyethylene terephthalate. Then, a first coating process 410A is performed on one of the first surfaces 405A of the transparent substrate 405 to facilitate coating a conductive material 415 on the first surface 405A of the transparent substrate 405. Next, a first curing process 420A is performed on the conductive material 415 on the first surface 405A of the transparent substrate 405 to form a first transparent conductive layer 425A on the first surface 405A of the transparent substrate 405. Subsequently, a second coating process 410B is performed to facilitate coating the conductive material 415 on one of the second surfaces 405B of the transparent substrate 405, wherein the first surface 405A and the second surface 405B are opposite surfaces. Next, a second curing process 420B is performed on the conductive material 415 on the second surface 405B of the transparent substrate 405 to form a second transparent conductive layer 425B on the second surface 405B of the transparent substrate 405, wherein A curing process 420A and a second curing process 420B further comprise a baking step.

The conductive material 415 includes a PEDOT:PSS, a graphite structure and a tantalum oxide, and the PEDOT:PSS is a mixture of poly 3,4-ethylenedioxythiophene and polystyrenesulfonic acid, which accounts for about conductive. material 30%~70% of the material 415, the preferred range is about 50%~60%; and the graphite structure further comprises a graphene, and the graphite structure accounts for about 15%~35% of the conductive material 415, and the preferred range is about It is 20%~25%; and the above-mentioned niobium oxide accounts for about 15%~35% of the conductive material 415, and the preferred range is about 20%~25%.

Thereafter, a lithography process 430 is performed on the first transparent conductive layer 425A and the second transparent conductive layer 425B respectively to facilitate converting the first transparent conductive layer 425A and the second transparent conductive layer 425B into a specific pattern, respectively, and forming at least one A transparent conductive region 435A on the first surface 405A of the transparent substrate 405 and at least a second transparent conductive region 435B and at least a third transparent conductive region 435C on the second surface 405B of the transparent substrate 405, wherein the lithography The process 430 further includes an etching step, and the at least one third transparent conductive region 435C is staggered with the at least one second transparent conductive region 435B in an adjacent interval, and the first transparent conductive region 435A and the second transparent conductive The regions 435B are formed orthogonally in the spatial direction, and the first transparent conductive regions 435A and the third transparent conductive regions 435C form at least one spatial intersection in the space, as shown in FIG. 4C.

Then, a channel program 440 is performed to sequentially pass through at least one first transparent conductive region 435A, a transparent substrate 405 and at least a third transparent guide. The electrical region 435C forms a channel 445 at a position of at least one spatial intersection, and then an electrical conduction process 450 is performed to conduct at least a first transparent conductive region 435A and at least a third transparent conductive region 435C, wherein the electrical region The turn-on process 450 further includes a filling step to fill the conductive material 455 in the via 445, and the conductive material can be a silver paste.

Next, an implanting process 460 is performed to form at least one light emitting diode 465 on the second surface 405B of the transparent substrate 405B at least a gap between the third transparent conductive region 435C and the at least one second transparent conductive region 435B. The two electrodes of the at least one LED 465 are electrically coupled to the at least one third transparent conductive region 435C and the at least one second transparent conductive region 435B, wherein the execution procedure of the implant program 460 and the channel program 440 can be performed. Demand transformation. Finally, a protection process 470 is performed to form a transparent protective layer 475 on the entire surface, and thereby forming a light emitting diode display structure 400, wherein the material of the transparent protective layer 475 further comprises a PU.

According to a fifth embodiment of the present invention, as shown in FIGS. 5A and 5B, the present invention provides a light emitting diode display structure 500 and a method of forming the same, first providing a transparent substrate 505, wherein, transparent The material of the substrate 505 further comprises a polyethylene terephthalate. Then, a first coating process is performed on the first surface 505A of one of the transparent substrates 505. 510A facilitates coating a conductive material 515 on the first surface 505A of the transparent substrate 505. Next, a first curing process 520A is performed on the conductive material 515 on the first surface 505A of the transparent substrate 505 to form a first transparent conductive layer 525A on the first surface 505A of the transparent substrate 505. Subsequently, a second coating process 510B is performed to facilitate coating the conductive material 515 on one of the second surfaces 505B of the transparent substrate 505, wherein the first surface 505A and the second surface 505B are opposite surfaces. Next, a second curing process 520B is performed on the conductive material 515 on the second surface 505B of the transparent substrate 505 to form a second transparent conductive layer 525B on the second surface 505B of the transparent substrate 505, wherein A curing process 520A and a second curing process 520B further comprise a baking step.

The conductive material 515 includes a PEDOT:PSS, a graphite structure and a tantalum oxide, and the PEDOT:PSS is a mixture of poly 3,4-ethylenedioxythiophene and polystyrenesulfonic acid, which accounts for about conductive. The material 515 is 30%~70%, and the preferred range is about 50%~60%; and the graphite structure further comprises a graphene, and the graphite structure accounts for about 15%~35% of the conductive material 515, and the preferred range is about It is 20%~25%; and the above-mentioned niobium oxide accounts for about 15%~35% of the conductive material 515, and the preferred range is about 20%~25%.

Thereafter, a lithography process 530 is performed on the first transparent conductive layer 525A and the second transparent conductive layer 525B, respectively, so as to respectively convert the first transparent conductive layer 525A and the second transparent conductive layer 525B into a specific pattern, and form at least one A transparent conductive region 535A is disposed on the first surface 505A of the transparent substrate 505 and the at least one second transparent conductive region 535B on the second surface 505B of the transparent substrate 505, wherein the lithography process 530 further includes an etching step, and The first transparent conductive region 535A and the second transparent conductive region 535B are orthogonal to each other in the spatial direction, and at least one spatial intersection is formed in the space, as shown in FIG.

A channel process 540 is performed to sequentially pass through at least one first transparent conductive region 535A, the transparent substrate 505, and form at least one channel 545 at a position beside the at least one second transparent conductive region 535B. In addition, the channel program 540 may be preceded by an insulating process 550 to form at least one transparent insulating layer 555 on the second surface 505B of the transparent substrate 505 between the at least one second transparent conductive region 535B, and The material of the transparent insulating layer 555 may be an optical insulating rubber (OCA). If the LED display structure 500 has at least one transparent dielectric layer 555, the channel program 540 sequentially passes through at least one first transparent conductive region 535A, the transparent substrate 505 and the transparent dielectric layer 555 and form a channel 545. Next, an implantation process 560 is performed to form at least one light emitting diode 565 to The second transparent conductive area 535B is less than one, wherein the execution program of the implant program 560 and the channel program 540 can be changed as needed.

Next, an electrical continuity program 570 is performed to turn on at least one of the first transparent conductive region 535A and the at least one light emitting diode 565, wherein the electrical continuity program 570 further includes a filling step to fill the conductive material 575 in the channel. In 545, the conductive material may be selected according to a process. If the transparent dielectric layer 555 is provided, silver paste may be selected. If the transparent dielectric layer 555 is not provided, a rigid conductor such as a copper wire or a lead pin may be selected. Thereby, the two electrodes of the at least one LED 565 are electrically disengaged with the at least one second transparent conductive region 435B and the conductive material 575 of the at least one channel 545, as shown in FIG. Finally, a protection process 580 is performed to form a transparent protective layer 585 on the entire surface, and thereby the LED display structure 500 is formed, wherein the material of the transparent protection layer 585 further comprises a PU.

In accordance with the above-described embodiments of the present invention, the first conductive region and the second conductive region have a linear structure that intersects each other at a right angle in the spatial direction, and thus form a matrix structure of independently driveable rectangular LEDs. The right angle LED architectures form the pixels or pixels of the display. If the electrodes of the first conductive region and the second conductive region are connected to the power source, the illuminating pixels are formed at or near the intersection of the electrodes, so that the display can be formed in a simple manner and the display changes can be controlled. , described in this case The pixel structure is not limited to a particular shape. Basically, all pixel shapes are possible, thus resulting in a split display (for example) to display icons or simple graphics. Furthermore, according to the application of the invention, in addition to the passive matrix structure, an active matrix structure can also be used.

Furthermore, since the conventionally used PEDOT:PSS raw material has disadvantages such as poor environmental stability, resistance drift, insufficient transparency, easy wear, poor adhesion, etc., the conductive material developed by the present invention can achieve high transparency and resistance. The special effect of abrasion, low and stable resistance, especially the transparent conductive layer formed by the conductive material developed by the invention has the excellent characteristic of high flexibility. Therefore, the light-emitting diode display structure formed by the conductive material developed by the invention has the characteristics of flexibility and transparency, and can be widely applied to the commercial and industrial aspects of the light-emitting diode, for example, a smart display window For example, when an advertisement display is required, the LED display structure of the present invention can display the advertisement display effect with a minimum space, and when closed, it is a transparent window.

Obviously, many modifications and differences may be made to the invention in light of the above description. It is therefore to be understood that within the scope of the appended claims, the invention may be The above is only the preferred embodiment of the present invention, and is not intended to limit the scope of the patent application of the present invention; Equivalent changes or modifications made without departing from the spirit of the invention are intended to be included within the scope of the appended claims.

100‧‧‧Flexible transparent conductive film

200, 300, 400, 500‧‧‧Light emitting diode display structure

105, 215, 315, 415, 515‧‧‧ conductive materials

110, 210, 310‧‧ ‧ coating procedure

410A, 510A‧‧‧ first coating procedure

410B, 510B‧‧‧ second coating procedure

115, 405, 505‧‧‧ transparent substrate

405A, 505A‧‧‧ first surface

405B, 505B‧‧‧ second surface

120, 220, 320‧‧‧ curing procedures

420A, 520A‧‧‧ first curing procedure

420B, 520B‧‧‧ second curing procedure

205A, 305A‧‧‧ first transparent substrate

205B, 305B‧‧‧ second transparent substrate

225A, 325A, 425A, 525A‧‧‧ first transparent conductive layer

225B, 325B, 425B, 525B‧‧‧ second transparent conductive layer

230, 330, 430, 530‧‧‧ lithography procedures

235A, 335A, 435A, 535A‧‧‧ first transparent conductive area

235B, 335B, 435B, 535B‧‧‧ second transparent conductive area

335C, 435C‧‧‧ third transparent conductive area

240, 340, 460, 560‧‧‧ implant procedures

245, 345, 465, 565‧‧ ‧Lighting diodes

250, 350, 550‧ ‧ insulation procedures

255, 355, 555‧‧‧ transparent insulation

260, 370‧‧‧ alignment fitting procedure

270, 390, 470, 580‧‧ ‧ protection procedures

275, 395, 475, 585‧‧ ‧ transparent protective layer

360, 440, 540‧‧‧ channel procedures

365, 445, 545‧‧‧ channels

380, 450, 570‧‧‧ electrical continuity procedures

385, 455, 575‧‧‧ conductive materials

The first figure shows a flexible transparent conductive film and a method thereof according to a first embodiment of the present invention; and the second to second C diagrams show a second embodiment according to the present invention. Light-emitting diode display structure and method thereof; FIG. 3A to FIG. 3C are diagrams showing a light-emitting diode display structure and a method thereof according to a third embodiment of the present invention; FIG. 4A to FIG. Figure C is a view showing a light-emitting diode display structure and a method thereof according to a fourth embodiment of the present invention; and a fifth embodiment to a fifth C diagram showing a fifth embodiment according to the present invention. Light-emitting diode display structure and method thereof.

200‧‧‧Light emitting diode display structure

205A‧‧‧First transparent substrate

205B‧‧‧Second transparent substrate

235A‧‧‧First transparent conductive area

235B‧‧‧Second transparent conductive area

245‧‧‧Lighting diode

255‧‧‧Transparent insulation

Claims (10)

An electrically conductive material comprising: a mixture of poly(3,4-ethylenedioxythiophene) and polystyrenesulfonic acid; a graphite structure; and an antimony oxide, wherein the poly 3,4-ethylene dioxy group The mixture of thiophene and polystyrene sulfonic acid accounts for about 30% to 70% of the conductive material, and the graphite structure accounts for about 15% to 35% of the conductive material, and the cerium oxide accounts for about 15% to 35% of the conductive material. %. The conductive material according to claim 1, wherein the graphite structure further comprises a graphene. The conductive material according to claim 1, wherein the conductive material can be used to form a flexible transparent conductive film. The conductive material according to claim 3, wherein the method for forming the flexible transparent conductive film comprises: performing a coating process to coat the conductive material on a surface of a flexible transparent substrate; A curing process is performed to form the flexible transparent conductive film on the surface of the flexible transparent substrate. The flexible transparent conductive film is formed in a flexible transparent display structure of a light-emitting diode, as described in claim 3, wherein the conductive transparent material is formed. An electrically conductive material comprising: a mixture of poly(3,4-ethylenedioxythiophene) and polystyrenesulfonic acid; a graphite structure; and an antimony oxide, wherein the poly 3,4-ethylene dioxy group The mixture of thiophene and polystyrene sulfonic acid ranges from about 50% to about 60%, and the graphite structure ranges from about 20% to about 25%, and the cerium oxide ranges from about 20% to about 25%. The conductive material according to claim 6, wherein the graphite structure further comprises a graphene. The conductive material as described in claim 6 can be used to form a flexible transparent conductive film. The method for forming a flexible transparent conductive film according to claim 6, wherein the method for forming the flexible transparent conductive film comprises: performing a coating process to coat the conductive material on a surface of a flexible transparent substrate; Curing process to form the flexible transparent conductive film for the flexible On the surface of a transparent substrate. The flexible transparent conductive film is formed in a flexible transparent display structure of a light-emitting diode according to the conductive material described in claim 6 of the patent application.