CN110176478A - Organic LED display device and preparation method thereof - Google Patents
Organic LED display device and preparation method thereof Download PDFInfo
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- CN110176478A CN110176478A CN201910448743.8A CN201910448743A CN110176478A CN 110176478 A CN110176478 A CN 110176478A CN 201910448743 A CN201910448743 A CN 201910448743A CN 110176478 A CN110176478 A CN 110176478A
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- 238000002360 preparation method Methods 0.000 title abstract description 7
- 239000010409 thin film Substances 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 230000027756 respiratory electron transport chain Effects 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 238000007740 vapor deposition Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical group O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 238000007641 inkjet printing Methods 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 5
- 239000002210 silicon-based material Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims 1
- 239000007921 spray Substances 0.000 claims 1
- 238000010025 steaming Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010181 polygamy Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/824—Cathodes combined with auxiliary electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a kind of organic LED display device and preparation method thereof, the organic LED display device includes substrate, and the substrate includes substrate；Thin-film transistor circuit layer is arranged over the substrate, and the thin-film transistor circuit layer has control circuit；At least one groove is equipped on the thin-film transistor circuit layer, the bottom of the groove is equipped with electron transfer layer, and auxiliary cathode layer is filled at least one described groove；Anode layer is located on the thin-film transistor circuit layer；Luminescent layer is uniformly located on the anode layer, and the electron transfer layer is also provided on the luminescent layer；Cathode layer is covered on the electron transfer layer and the auxiliary cathode layer, to avoid thin-film transistor circuit layer complexity, be ensure that the flatness of Pixel surface, is improved the yield of product.
Description
Technical field
The present invention relates to display panel field more particularly to a kind of organic LED display device and its production sides
Method.
Background technique
Organic Light Emitting Diode (Organic Light-Emitting Diode, OLED) is with its self-luminous, all solid state, high
The advantages that comparison, becomes New Type Display Devices most potential in recent years.
The application direction of OLED has the three primary colors pictures such as red (Red, R), green (Green, G), blue (Blue, B) at present
Plain (pixel) (Side by Side) is constituted in a side-by-side fashion RGB OLED technology and white light OLED (White
OLED the technology two major classes of optical filter (Color Filter, CF)) are added.And product is broadly divided into the mobile phone of small size, plate
Computer (Pad) screen and TV (Television, TV) screen of larger size etc..
In large scale OLED application direction, the product sold currently on the market concentrates on bottom (Bottom) light-emitting junction
Structure, cathode use thicker metal layer, but with the growth of resolution ratio, Bottom OLED will receive the limitation of aperture opening ratio, it is difficult to
Realize consumer for high-resolution demand.Therefore, large scale OLED product also uses top light emitting OLED (Top OLED)
The exploitation of structure realizes higher resolution ratio with expectation.
The cathode of Top OLED uses relatively thin transparent metal, realizes the connection with screen edge circuit.Due to that need to take into account
Transmitance, transparent cathode thinner thickness cause conductive capability poor.When screen size is larger, screen center region is due to from electricity
Farther out, the electric current transmission of long range can be such that cathode partial pressure increases to pole interface, to cause screen edge and screen center OLED member
The carrier number injected in part is variant.
On the one hand it will lead to screen center's obfuscation；On the other hand it will increase energy consumption, therefore Top OLED cathode need to be carried out
Improve, promotes conductivity, reduce the gap of driving voltage.
Current method first is that thin film transistor (TFT) (Thin Film below top light emitting OLED device
Transistor, thin film transistor (TFT)) auxiliary conductor is added in circuit, although this method improves cathode, conductivity is promoted,
The gap of driving voltage is reduced, but this method also faces three problems.
First, auxiliary cathode is added can aggravate answering for bottom film transistor circuit layer in thin-film transistor circuit layer
Polygamy, it is possible to the problems such as will lead to short circuit.
Second, add the flatness that can be unfavorable for Pixel surface below auxiliary electrode to pixel.
Third, needs to burn machine (burn in) when using auxiliary cathode to puncture electron transfer layer, the process it is uncontrollable
Degree is larger, is unfavorable for the consistent repeatability of device.
Specifically, the display device of the prior art as shown in Figure 1, the large-scale OLED of long side 130cm, broadside 90cm are shown
The surrounding of screen 2 is arranged in device, electrode interface 1, and when 2 size of screen is larger, screen center region 3 is due to from electrode interface
1 farther out, and the electric current transmission of long range can be such that cathode partial pressure increases, to cause the OLED at screen 2 edge and screen center region 3
The carrier number injected in element is variant, and the brightness that on the one hand will lead to screen center region 3 is darker, on the other hand can increase
The problem of adding energy consumption.
Summary of the invention
The present invention provides a kind of organic LED display device and preparation method thereof, can be avoided thin film transistor (TFT) electricity
Road floor complexity, ensure that the flatness of Pixel surface, improve the yield of product.
The embodiment of the invention provides a kind of organic LED display devices, comprising: substrate, the substrate include lining
Bottom；Thin-film transistor circuit layer is arranged over the substrate, and the thin-film transistor circuit layer has control circuit；Described thin
Film transistor circuit layer is equipped at least one groove, and the bottom of the groove is equipped with electron transfer layer, the filling of auxiliary cathode layer
In in the groove；Anode layer is located on the thin-film transistor circuit layer；Luminescent layer is uniformly located on the anode layer, described
Electron transfer layer is also provided on the luminescent layer；And cathode layer is covered on the electron transfer layer and the auxiliary cathode layer
On.
Further, the auxiliary cathode layer is filled in the groove by inkjet-printing device.
Further, the auxiliary cathode layer is nanometer silver paste material.
Further, the material of the anode layer be selected from tin indium oxide, indium zinc oxide, gold, platinum, silicon materials it is any or
A combination thereof.
Further, the electron transfer layer covers the bottom with the groove on the light-emitting layer by way of vapor deposition
Portion.
Further, the cathode layer is covered on the electron transfer layer and the auxiliary cathode layer by way of vapor deposition
On.
The embodiment of the invention also provides a kind of production methods of organic LED display device, which is characterized in that
The following steps are included: providing a substrate, the substrate includes substrate；Thin-film transistor circuit layer, institute are made over the substrate
Thin-film transistor circuit layer is stated with control circuit；At least one groove is made on the thin-film transistor circuit layer, it is described
The bottom overlay electronic transport layer of groove, and auxiliary cathode layer is filled in the groove；In the thin-film transistor circuit layer
Upper production anode layer；Luminescent layer is uniformly made on the anode layer, makes the electron transfer layer on the light-emitting layer；?
Covered cathode layer on the electron transfer layer and the auxiliary cathode layer.
Further, the auxiliary cathode layer is filled in the groove by inkjet-printing device, the auxiliary cathode
Layer is nanometer silver paste material.
Further, the material of the anode layer be selected from tin indium oxide, indium zinc oxide, gold, platinum, silicon materials it is any or
A combination thereof.
Further, the electron transfer layer covers the bottom with the groove on the light-emitting layer by way of vapor deposition
Portion, the cathode layer are covered on the electron transfer layer and the auxiliary cathode layer by way of vapor deposition.
A kind of the advantages of organic LED display device provided by the invention and preparation method thereof, is, avoids film
Transistor circuit layer excessively complexity leads to the problem of short circuit, ensure that the flatness of Pixel surface, avoids breakdown electron-transport
Layer bring uncontrollable factor, to improve the yield of product.
Detailed description of the invention
With reference to the accompanying drawing, by the way that detailed description of specific embodiments of the present invention, technical solution of the present invention will be made
And other beneficial effects are apparent.
Fig. 1 is the organic LED display device structural schematic diagram that the prior art provides.
Fig. 2 is the groove schematic top view of substrate of organic LED display device provided in an embodiment of the present invention.
Fig. 3 is the groove substrate of organic LED display device provided in an embodiment of the present invention along the direction A1-A1
Diagrammatic cross-section.
Fig. 4 substantially prints luminous layer structure schematic diagram in groove to be provided in an embodiment of the present invention.
Fig. 5 is the structural schematic diagram of vapor deposition electron transfer layer provided in an embodiment of the present invention.
Fig. 6 is the structural schematic diagram of printing auxiliary cathode provided in an embodiment of the present invention.
Fig. 7 is the structural schematic diagram of organic LED display device provided in an embodiment of the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments, is based on
Embodiment in the present invention, those skilled in the art's every other implementation obtained without creative efforts
Example, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that, term " center ", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside", " up time
The orientation or positional relationship of the instructions such as needle ", " counterclockwise " is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of
The description present invention and simplified description, rather than the device or element of indication or suggestion meaning must have a particular orientation, with spy
Fixed orientation construction and operation, therefore be not considered as limiting the invention.
In addition, term " first ", " second " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance
Perhaps thus the quantity for implicitly indicating indicated technical characteristic defines " first ", the feature of " second " can be expressed or
Implicitly include one or more feature, in the description of the present invention, the meaning of " plurality " is two or two with
On, unless otherwise specifically defined.
The organic light-emitting diode pixel of the present embodiment can integrate in a display device, which can apply
In the products such as mobile terminal, tablet computer or TV.
The production method of organic LED display device provided in an embodiment of the present invention, the Organic Light Emitting Diode are aobvious
Showing device production method the following steps are included:
Groove substrate is made first, and if Fig. 2 is the top view of groove substrate, Fig. 3 is groove substrate at A1-A1 in Fig. 2
Diagrammatic cross-section, groove board structure include: barricade 4, substrate 5 and thin-film transistor circuit layer 6, thin-film transistor circuit layer 6
Middle laying control circuit makes multiple grooves 13 on thin-film transistor circuit layer 6, makes on thin-film transistor circuit layer 6
The anode layer 7 of tin indium oxide (Indium Tin oxide, ITO) material.
As shown in figure 4, one layer of luminescent layer 8 is made by inkjet-printing device 12 on the groove substrate made, it is described
Luminescent layer 8 is uniformly arranged on the anode layer 7.
Electron transfer layer 9 is made on luminescent layer 8, as shown in figure 5, electron transfer layer 9 is covered on by way of vapor deposition
On luminescent layer 8, upper electron transfer layer 9 is also covered in further groove 13.
Then, as shown in fig. 6, by inkjet-printing device 12, auxiliary cathode layer 10 is made on electron transfer layer 9 and is filled
Groove 13, auxiliary cathode layer 10 can select nanometer silver paste material to make.
Finally, being covered on groove substrate, so that negative as shown in fig. 7, make one layer of cathode layer 11 by way of vapor deposition
Pole layer 11 is connect with the auxiliary cathode layer 10 made in Fig. 6.
The embodiment of the invention also provides a kind of organic LED display device, overall structure is as shown in fig. 7, main
It include: substrate 5, anode layer 7 and cathode layer 11, wherein substrate 5 includes substrate, and thin-film transistor circuit layer 6 is arranged described
On substrate, control circuit is laid in thin-film transistor circuit layer 6.
Multiple grooves 13 are made on thin-film transistor circuit layer 6, have electron transfer layer 9 in the bottom of the groove 13,
Nanometer silver paste is filled on the electron transfer layer 9 of 13 bottom of groove as auxiliary cathode layer 10.
Anode layer 7 is additionally provided on thin-film transistor circuit layer 6, for anode layer 7, since it is desired that having injected holes into
In machine light emitting diode (Organic Light-Emitting Diode, OLED), it is therefore desirable to its work function with higher
(work function), the anode material usually selected have tin indium oxide, and indium zinc oxide is golden, platinum, silicon etc., in the present embodiment
Anode layer 7 be mainly made of tin indium oxide (ITO), luminescent layer 8 is set between anode layer 7 and electron transfer layer 9, entire
Organic luminous semiconductor pixel top layer is equipped with cathode layer 11, and cathode layer 11 is electrically connected with auxiliary cathode layer 10, to promote conduction
Rate reduces the gap of driving voltage.
The embodiment of the present invention can effectively avoid the cathode of top light emitting OLED using relatively thin transparent metal, realize with
Simultaneously as transmitance need to be taken into account, transparent cathode thinner thickness leads to asking for conductive capability difference for the connection of screen edge circuit
Topic.
A kind of the advantages of organic LED display device provided by the invention and preparation method thereof, is, avoids film
Transistor circuit layer excessively complexity leads to the problem of short circuit, ensure that the flatness of Pixel surface, avoids breakdown electron-transport
Layer bring uncontrollable factor, to improve the yield of product.
In conclusion although the present invention has been disclosed above in the preferred embodiment, but above preferred embodiment is not to limit
The system present invention, those skilled in the art can make various changes and profit without departing from the spirit and scope of the present invention
Decorations, therefore protection scope of the present invention subjects to the scope of the claims.
Claims (10)
1. a kind of organic LED display device characterized by comprising
Substrate, the substrate include substrate；
Thin-film transistor circuit layer is arranged over the substrate, and the thin-film transistor circuit layer has control circuit；
At least one groove is equipped on the thin-film transistor circuit layer, the bottom of the groove is equipped with electron transfer layer, auxiliary
Cathode layer is helped to be filled in the groove；
Anode layer is located on the thin-film transistor circuit layer；
Luminescent layer is uniformly located on the anode layer, and the electron transfer layer is also provided on the luminescent layer；And
Cathode layer is covered on the electron transfer layer and the auxiliary cathode layer.
2. organic LED display device as described in claim 1, which is characterized in that the auxiliary cathode layer passes through spray
Black printing equipment is filled in the groove.
3. organic LED display device as claimed in claim 2, which is characterized in that the auxiliary cathode layer is nanometer
Silver paste material.
4. organic LED display device as described in claim 1, which is characterized in that the material of the anode layer is selected from
Tin indium oxide, indium zinc oxide is golden, platinum, and silicon materials are any or combinations thereof.
5. organic LED display device as described in claim 1, which is characterized in that the electron transfer layer passes through steaming
The mode of plating covers the bottom with the groove on the light-emitting layer.
6. organic LED display device as described in claim 1, which is characterized in that the cathode layer passes through vapor deposition
Mode is covered on the electron transfer layer and the auxiliary cathode layer.
7. a kind of production method of organic LED display device, which comprises the following steps:
A substrate is provided, the substrate includes substrate；
Thin-film transistor circuit layer is made over the substrate, and the thin-film transistor circuit layer has control circuit；
Make at least one groove on the thin-film transistor circuit layer, the bottom overlay electronic transport layer of the groove, and
Auxiliary cathode layer is filled in the groove；
Anode layer is made on the thin-film transistor circuit layer；
Luminescent layer is uniformly made on the anode layer, makes the electron transfer layer on the light-emitting layer；
The covered cathode layer on the electron transfer layer and the auxiliary cathode layer.
8. the production method of organic LED display device as claimed in claim 7, which is characterized in that the auxiliary yin
Pole layer is filled in the groove by inkjet-printing device, and the auxiliary cathode layer is nanometer silver paste material.
9. the production method of organic LED display device as claimed in claim 7, which is characterized in that the anode layer
Material be selected from tin indium oxide, indium zinc oxide, gold, platinum, silicon materials are any or combinations thereof.
10. the production method of organic LED display device as claimed in claim 7, which is characterized in that the electronics
Transport layer covers the bottom with the groove on the light-emitting layer, the side that the cathode layer passes through vapor deposition by way of vapor deposition
Formula is covered on the electron transfer layer and the auxiliary cathode layer.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910448743.8A CN110176478A (en) | 2019-05-28 | 2019-05-28 | Organic LED display device and preparation method thereof |
| PCT/CN2019/106614 WO2020237919A1 (en) | 2019-05-28 | 2019-09-19 | Organic light-emitting diode display apparatus and manufacturing method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910448743.8A CN110176478A (en) | 2019-05-28 | 2019-05-28 | Organic LED display device and preparation method thereof |
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| WO (1) | WO2020237919A1 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110828693A (en) * | 2019-10-30 | 2020-02-21 | 深圳市华星光电半导体显示技术有限公司 | Organic light emitting diode device and manufacturing method thereof |
| CN112002817A (en) * | 2020-08-25 | 2020-11-27 | 合肥视涯技术有限公司 | Organic light-emitting display panel |
| WO2020237919A1 (en) * | 2019-05-28 | 2020-12-03 | 深圳市华星光电半导体显示技术有限公司 | Organic light-emitting diode display apparatus and manufacturing method therefor |
| WO2021103177A1 (en) * | 2019-11-26 | 2021-06-03 | 深圳市华星光电半导体显示技术有限公司 | Organic light emitting diode display substrate and manufacturing method therefor, and display device |
| WO2021114421A1 (en) * | 2019-12-13 | 2021-06-17 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method thereof |
| CN113659101A (en) * | 2021-08-17 | 2021-11-16 | 京东方科技集团股份有限公司 | Preparation method of display panel, display panel and display device |
| US11348975B2 (en) | 2019-11-26 | 2022-05-31 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Organic light-emitting diode display substrate, manufacturing method of same and display device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113611812B (en) * | 2021-08-06 | 2024-03-15 | 京东方科技集团股份有限公司 | Display panel, manufacturing method thereof and display device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140346459A1 (en) * | 2013-05-21 | 2014-11-27 | Samsung Display Co., Ltd. | Organic light emitting display apparatus and method of manufacturing the same |
| CN104282712A (en) * | 2013-07-01 | 2015-01-14 | 三星显示有限公司 | Organic light-emitting display device and method of manufacturing same |
| CN107039486A (en) * | 2015-11-03 | 2017-08-11 | 乐金显示有限公司 | Organic light-emitting display device and its manufacture method |
| CN109103215A (en) * | 2017-06-21 | 2018-12-28 | 京东方科技集团股份有限公司 | A kind of organic LED display panel and preparation method thereof, display device |
| CN109524443A (en) * | 2018-12-17 | 2019-03-26 | 合肥鑫晟光电科技有限公司 | A kind of oled substrate and OLED display |
| CN109727998A (en) * | 2019-01-02 | 2019-05-07 | 京东方科技集团股份有限公司 | Array substrate and preparation method thereof, display device |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4058930B2 (en) * | 2001-10-09 | 2008-03-12 | セイコーエプソン株式会社 | ORGANIC ELECTROLUMINESCENT DEVICE, ITS MANUFACTURING METHOD, AND ELECTRONIC DEVICE |
| CN104485350B (en) * | 2014-12-26 | 2018-08-10 | 北京维信诺科技有限公司 | A kind of organic light-emitting display device and preparation method thereof |
| CN206194793U (en) * | 2016-12-01 | 2017-05-24 | 京东方科技集团股份有限公司 | Luminous type OLED display device in top |
| CN107565048B (en) * | 2017-08-24 | 2020-05-26 | 京东方科技集团股份有限公司 | Preparation method of array substrate, array substrate and display device |
| CN107331691B (en) * | 2017-08-24 | 2020-07-03 | 京东方科技集团股份有限公司 | Array substrate, preparation method thereof and display panel |
| CN207199675U (en) * | 2017-11-07 | 2018-04-06 | 深圳市华星光电半导体显示技术有限公司 | A kind of OLED and OLED display panel |
| CN110176478A (en) * | 2019-05-28 | 2019-08-27 | 深圳市华星光电半导体显示技术有限公司 | Organic LED display device and preparation method thereof |
-
2019
- 2019-05-28 CN CN201910448743.8A patent/CN110176478A/en active Pending
- 2019-09-19 WO PCT/CN2019/106614 patent/WO2020237919A1/en active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140346459A1 (en) * | 2013-05-21 | 2014-11-27 | Samsung Display Co., Ltd. | Organic light emitting display apparatus and method of manufacturing the same |
| CN104282712A (en) * | 2013-07-01 | 2015-01-14 | 三星显示有限公司 | Organic light-emitting display device and method of manufacturing same |
| CN107039486A (en) * | 2015-11-03 | 2017-08-11 | 乐金显示有限公司 | Organic light-emitting display device and its manufacture method |
| CN109103215A (en) * | 2017-06-21 | 2018-12-28 | 京东方科技集团股份有限公司 | A kind of organic LED display panel and preparation method thereof, display device |
| CN109524443A (en) * | 2018-12-17 | 2019-03-26 | 合肥鑫晟光电科技有限公司 | A kind of oled substrate and OLED display |
| CN109727998A (en) * | 2019-01-02 | 2019-05-07 | 京东方科技集团股份有限公司 | Array substrate and preparation method thereof, display device |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020237919A1 (en) * | 2019-05-28 | 2020-12-03 | 深圳市华星光电半导体显示技术有限公司 | Organic light-emitting diode display apparatus and manufacturing method therefor |
| CN110828693A (en) * | 2019-10-30 | 2020-02-21 | 深圳市华星光电半导体显示技术有限公司 | Organic light emitting diode device and manufacturing method thereof |
| US11411196B2 (en) | 2019-10-30 | 2022-08-09 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Organic light-emitting diode device and manufacturing method thereof |
| WO2021103177A1 (en) * | 2019-11-26 | 2021-06-03 | 深圳市华星光电半导体显示技术有限公司 | Organic light emitting diode display substrate and manufacturing method therefor, and display device |
| US11348975B2 (en) | 2019-11-26 | 2022-05-31 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Organic light-emitting diode display substrate, manufacturing method of same and display device |
| WO2021114421A1 (en) * | 2019-12-13 | 2021-06-17 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method thereof |
| CN112002817A (en) * | 2020-08-25 | 2020-11-27 | 合肥视涯技术有限公司 | Organic light-emitting display panel |
| US11871620B2 (en) | 2020-08-25 | 2024-01-09 | SeeYa Optronics, Ltd. | OLED display panel having fence structure under anode |
| CN113659101A (en) * | 2021-08-17 | 2021-11-16 | 京东方科技集团股份有限公司 | Preparation method of display panel, display panel and display device |
| CN113659101B (en) * | 2021-08-17 | 2024-05-14 | 京东方科技集团股份有限公司 | Preparation method of display panel, display panel and display device |
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