TWI559272B - Gate pulse modulation circuit and angle modulation method thereof - Google Patents
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Description
本發明涉及一種閘極脈衝調變電路及其削角調變方法。 The invention relates to a gate pulse modulation circuit and a chamfer modulation method thereof.
薄膜電晶體液晶顯示器(TFT-LCD)的驅動方式是利用閘極脈衝訊號驅動每個畫素電晶體以控制每個畫素的開啟和關閉狀態;當輸入一閘極脈衝訊號使畫素電晶體為導通時,所要顯示的資料訊號就會經由該畫素電晶體傳送到畫素上,若畫素電晶體截止時,所要顯示的資料訊號則不會經由該畫素電晶體傳送到畫素上。 A thin film transistor liquid crystal display (TFT-LCD) is driven by a gate pulse signal to drive each pixel transistor to control the on and off states of each pixel; when a gate pulse signal is input to make a pixel transistor When it is turned on, the data signal to be displayed is transmitted to the pixel through the pixel transistor. If the pixel transistor is turned off, the data signal to be displayed is not transmitted to the pixel through the pixel transistor. .
在顯示面板的畫素陣列中,每個畫素為等效電阻和等效電容所組成,在這樣的情況下,每一閘極脈衝訊號掃描皆會造成掃描線前端輸入波形與後端波形不同,即所謂的延遲波形。因此,有必要對閘極脈衝訊號進行削角調變,使掃描線的前端輸入波形與後端波形很接近,進而減少前後端饋穿(Feed Through)電壓不同所造成的畫面閃爍(flicker)現象。 In the pixel array of the display panel, each pixel is composed of an equivalent resistance and an equivalent capacitance. In this case, each gate pulse signal scan causes the input waveform of the front end of the scan line to be different from the waveform of the back end. , the so-called delayed waveform. Therefore, it is necessary to chamfer the gate pulse signal so that the front end input waveform of the scan line is close to the back end waveform, thereby reducing flicker phenomenon caused by different feedthrough voltages of the front and rear ends. .
有鑑於此,有必要提供一種可消除畫面閃爍的閘極脈衝調變電路及其削角調變方法。 In view of the above, it is necessary to provide a gate pulse modulation circuit and a chamfer modulation method which can eliminate picture flicker.
一種閘極脈衝調變電路用於輸出閘極脈衝調制訊號至畫素陣列,包括: 邏輯控制選通器,包括一用於接收閘極電源電壓的閘極電源電壓輸入端,經放電電阻連接一低電壓準位的放電輸出端,控制訊號輸入端及電源訊號輸出端;一上橋開關連接該邏輯控制選通器;一下橋開關耦合至該上橋開關與低電壓準位之間,該上橋開關與該下橋開關之間節點連接閘極脈衝調制訊號輸出端以輸出閘極脈衝調制訊號;該上橋開關與下橋開關交替導通;該上橋開關導通、下橋開關關斷時,該邏輯選擇選通器對該控制訊號做邏輯運算,當邏輯運算結果為第一數值時,該邏輯控制選通器根據該控制訊號輸出閘極電源電壓,該節點輸出閘極脈衝調制訊號至畫素陣列;當邏輯運算結果為第二數值時,該邏輯控制選通器根據控制訊號選通該放電輸出端,該畫素陣列經該上橋開關、放電電阻放電以拉低該閘極脈衝調制訊號形成削角訊號。 A gate pulse modulation circuit is used for outputting a gate pulse modulation signal to a pixel array, including: The logic control gate comprises a gate power supply voltage input terminal for receiving the gate power supply voltage, a discharge output terminal connected to the low voltage level via the discharge resistor, a control signal input end and a power signal output end; The switch is connected to the logic control gate; the lower bridge switch is coupled between the upper bridge switch and the low voltage level, and the node between the upper bridge switch and the lower bridge switch is connected to the gate pulse modulation signal output terminal to output the gate a pulse modulation signal; the upper bridge switch and the lower bridge switch are alternately turned on; when the upper bridge switch is turned on and the lower bridge switch is turned off, the logic selects the gate to perform a logic operation on the control signal, and when the logic operation result is the first value The logic control gate outputs a gate power supply voltage according to the control signal, and the node outputs a gate pulse modulation signal to the pixel array; when the logic operation result is the second value, the logic control gate is controlled according to the control signal The discharge output terminal is gated, and the pixel array is discharged through the upper bridge switch and the discharge resistor to lower the gate pulse modulation signal to form a chamfer signal.
一種削角調變方法應用於輸出閘極脈衝調制訊號至畫素陣列的閘極脈衝調變電路,該閘極脈衝調變電路包括:邏輯控制選通器,包括閘極電源電壓輸入端接收一閘極電源電壓,放電輸出端經放電電阻連接一低電壓準位,控制訊號輸入端及;一上橋開關連接該邏輯控制選通器;一下橋開關耦合至該上橋開關與接地端之間,該上橋開關與該下橋開關之間節點輸出閘極脈衝調制訊號至畫素陣列;該削角調變方法包括:第一時間段,控制該上橋開關導通,該下橋開關關斷,該邏輯選 擇選通器對該控制訊號做邏輯運算,該邏輯運算結果為第一數值時,該邏輯控制選通器使該閘極電源輸入端與該電源訊號輸出端實現電導通,同時選擇性的關斷該閘極電源輸入端與該放電輸出端之間的電連接,該閘極訊號輸出端輸出閘極脈衝調制訊號至畫素陣列;第二時間段,控制該上橋開關導通,該下橋開關關斷,該邏輯選擇選通器對該控制訊號做邏輯運算,該邏輯運算結果為第二數值時,該邏輯控制選通器關斷該閘極電源輸入端與該電源訊號輸出端電連接,同時使該閘極電源輸入端與該放電輸出端之間實現的電連接,該畫素陣列經該上橋開關、放電電阻放電以拉低該閘極脈衝調制訊號形成削角訊號;及第三時間段,控制該上橋開關關斷,該下橋開關關斷,該畫素陣列經下橋開關完全放電。 A chamfer modulation method is applied to a gate pulse modulation circuit for outputting a gate pulse modulation signal to a pixel array, the gate pulse modulation circuit comprising: a logic control gate, including a gate power supply voltage input terminal Receiving a gate power supply voltage, the discharge output terminal is connected to a low voltage level via a discharge resistor, and the control signal input terminal is connected; an upper bridge switch is connected to the logic control gate; the lower bridge switch is coupled to the upper bridge switch and the ground terminal Between the upper bridge switch and the lower bridge switch, the node outputs a gate pulse modulation signal to the pixel array; the chamfer modulation method includes: a first time period, controlling the upper bridge switch to be turned on, the lower bridge switch Shutdown, the logic selection The gate device performs a logic operation on the control signal. When the logic operation result is the first value, the logic control gate device electrically connects the gate power input end and the power signal output terminal, and selectively turns off Disconnecting the electrical connection between the gate power input end and the discharge output end, the gate signal output end outputs a gate pulse modulation signal to the pixel array; and in the second time period, controlling the upper bridge switch to be turned on, the lower bridge The switch is turned off, and the logic selects the gate device to perform a logic operation on the control signal. When the logic operation result is the second value, the logic control gate device turns off the gate power input end and electrically connects to the power signal output end. And electrically connecting the gate power input end and the discharge output end, the pixel array is discharged through the upper bridge switch and the discharge resistor to lower the gate pulse modulation signal to form a chamfer signal; and During the three time period, the upper bridge switch is controlled to be turned off, the lower bridge switch is turned off, and the pixel array is completely discharged by the lower bridge switch.
相較於先前技術,本發明的閘極脈衝調變電路及其削角調變方法利用畫素陣列通過放電電阻放電使閘極電壓形成削角,從而可減少畫面閃爍現象,且本案之削角調變係藉由畫素陣列經放電電阻放電形成減少電壓不穩定引起的畫面透光不均勻現象。 Compared with the prior art, the gate pulse modulation circuit and the chamfer modulation method of the present invention use the pixel array to form a chamfering voltage of the gate voltage by discharging the discharge resistor, thereby reducing the phenomenon of flickering of the picture, and the shaving of the case The angular modulation is formed by the discharge of the pixel array through the discharge resistor to reduce the unevenness of the light transmission caused by the voltage instability.
10‧‧‧閘極脈衝調變電路 10‧‧‧ gate pulse modulation circuit
20‧‧‧畫素陣列 20‧‧‧ pixel array
110‧‧‧邏輯控制選通器 110‧‧‧Logical Control Gates
120‧‧‧上橋開關 120‧‧‧Upper bridge switch
130‧‧‧下橋開關 130‧‧‧Bridge switch
140‧‧‧反向器 140‧‧‧ reverser
150‧‧‧放電電阻 150‧‧‧discharge resistor
LX‧‧‧節點 LX‧‧‧ node
VGH‧‧‧閘極電源電壓 VGH‧‧‧ gate power supply voltage
L‧‧‧閘極電源輸入端 L‧‧‧ gate power input
H‧‧‧放電輸出端 H‧‧‧Discharge output
IN1‧‧‧第一控制訊號輸入端 IN1‧‧‧first control signal input
IN2‧‧‧第二控制訊號輸入端 IN2‧‧‧second control signal input
Vo‧‧‧電源訊號輸出端 Vo‧‧‧ power signal output
VGL‧‧‧低電壓準位 VGL‧‧‧ low voltage level
CLK‧‧‧時鐘訊號 CLK‧‧‧clock signal
OE‧‧‧使能訊號 OE‧‧‧Enable signal
CT‧‧‧導通控制訊號 CT‧‧‧ conduction control signal
Gout‧‧‧閘極脈衝調制訊號 Gout‧‧‧ gate pulse modulation signal
圖1是本發明的閘極脈衝調變電路一實施方式電路結構示意圖。 1 is a schematic view showing the circuit structure of an embodiment of a gate pulse modulation circuit of the present invention.
圖2是圖1所示閘極脈衝調變電路工作時的訊號時序圖。 FIG. 2 is a timing diagram of signals when the gate pulse modulation circuit of FIG. 1 operates.
請參閱圖1,圖1是本發明的閘極脈衝調變電路10一實施方式電路結構示意圖。該閘極脈衝調變電路10用於輸出閘極電壓至畫素陣 列20。該閘極脈衝調變電路10包括邏輯控制選通器110、上橋開關120、下橋開關130、反向器140及放電電阻150。該邏輯控制選通器110、該上橋開關120及下橋開關130依次串接於閘極電源電壓VGH與低電壓準位VGL之間。該反向器140用於接收導通控制訊號CT以控制該上、下橋開關120、130的導通與關斷。該上橋開關120與下橋開關130之間節點LX輸出閘極脈衝調制訊號至畫素陣列20。 Please refer to FIG. 1. FIG. 1 is a schematic diagram showing the circuit structure of an embodiment of a gate pulse modulation circuit 10 of the present invention. The gate pulse modulation circuit 10 is configured to output a gate voltage to a pixel matrix Column 20. The gate pulse modulation circuit 10 includes a logic control gate 110, an upper bridge switch 120, a lower bridge switch 130, an inverter 140, and a discharge resistor 150. The logic control gate 110, the upper bridge switch 120 and the lower bridge switch 130 are sequentially connected in series between the gate power supply voltage VGH and the low voltage level VGL. The inverter 140 is configured to receive the conduction control signal CT to control the on and off of the upper and lower bridge switches 120, 130. The node LX outputs a gate pulse modulation signal to the pixel array 20 between the upper bridge switch 120 and the lower bridge switch 130.
該邏輯控制選通器110包括閘極電源輸入端L、放電輸出端H、第一控制訊號輸入端IN1、第二控制訊號輸入端IN2及電源訊號輸出端Vo。該閘極電源輸入端L連接一閘極電源電壓VGH,該放電輸出端H經放電電阻150連接該低電壓準位VGL,該第一控制訊號輸入端IN1用於接收時鐘訊號CLK,該第二控制訊號輸入端IN2用於接收使能訊號OE,該電源訊號輸出端Vo用於輸出閘極電壓。 The logic control gate 110 includes a gate power input terminal L, a discharge output terminal H, a first control signal input terminal IN1, a second control signal input terminal IN2, and a power signal output terminal Vo. The gate power supply input terminal L is connected to a gate power supply voltage VGH. The discharge output terminal H is connected to the low voltage level VGL via a discharge resistor 150. The first control signal input terminal IN1 is configured to receive a clock signal CLK. The control signal input terminal IN2 is used for receiving the enable signal OE, and the power signal output terminal Vo is used for outputting the gate voltage.
在本實施方式中,該上橋開關120為一PMOS(P-Metal Oxide Semiconductor)電晶體,該下橋開關130為一NMOS(N-Metal Oxide Semiconductor)電晶體。該上橋開關120的源極與該電源訊號輸出端Vo連接,該上橋開關120的汲極與該下橋開關130的汲極電連接,該下橋開關130的源極與低電壓準位VGL電性連接,該上橋開關120、下橋開關130的閘極均與該反向器140電連接。該節點LX位於該上橋開關120的汲極與該下橋開關130的汲極之間。 In the present embodiment, the upper bridge switch 120 is a PMOS (P-Metal Oxide Semiconductor) transistor, and the lower bridge switch 130 is an NMOS (N-Metal Oxide Semiconductor) transistor. The source of the upper bridge switch 120 is connected to the power signal output terminal Vo. The drain of the upper bridge switch 120 is electrically connected to the drain of the lower bridge switch 130. The source and the low voltage level of the lower bridge switch 130 are connected. The VGL is electrically connected, and the gates of the upper bridge switch 120 and the lower bridge switch 130 are electrically connected to the inverter 140. The node LX is located between the drain of the upper bridge switch 120 and the drain of the lower bridge switch 130.
請一併參閱圖2,圖2為圖1所示的閘極脈衝調變電路10工作時的訊號時序圖。在第一時間段T1,該反向器140接收該導通控制訊號CT控制該上橋開關120導通、下橋開關130關斷,在本實施方式中,該導通控制訊號CT為高準位訊號,經該反向器140反向後, 該導通控制訊號CT控制該上橋開關120導通、下橋開關130關斷。同時,該邏輯控制選通器110對該時鐘訊號CLK及使能訊號OE做邏輯運算,在本實施方式中,在第一時間段內,該時鐘訊號CLK為高準位訊號,該使能訊號OE為低準位訊號。該邏輯控制選通器110對該時鐘訊號CLK及使能訊號OE做或非運算,當運算結果為第一數值時,在本實施方式中,該第一數值為邏輯值“1”時,該邏輯控制選通器110使該閘極電源輸入端L與該電源訊號輸出端Vo這兩個端口之間實現電導通,同時選擇性的關斷該閘極電源輸入端L與該放電輸出端H之間的電連接。此時該閘極電源電壓VGH經該電源訊號輸出端Vo、上橋開關120及節點LX輸出閘極脈衝調制訊號Gout至畫素陣列20。 Please refer to FIG. 2 together. FIG. 2 is a timing diagram of the signal when the gate pulse modulation circuit 10 shown in FIG. 1 is in operation. In the first time period T1, the inverter 140 receives the conduction control signal CT to control the upper bridge switch 120 to be turned on, and the lower bridge switch 130 to be turned off. In this embodiment, the conduction control signal CT is a high level signal. After the reverser 140 is reversed, The conduction control signal CT controls the upper bridge switch 120 to be turned on and the lower bridge switch 130 to be turned off. At the same time, the logic control strobe 110 performs a logic operation on the clock signal CLK and the enable signal OE. In the embodiment, the clock signal CLK is a high level signal during the first time period, and the enable signal is OE is a low level signal. The logic control gate 110 performs a NOR operation on the clock signal CLK and the enable signal OE. When the operation result is the first value, in the embodiment, when the first value is a logic value “1”, the The logic control gate 110 electrically connects the gate power input terminal L and the power signal output terminal Vo, and selectively turns off the gate power input terminal L and the discharge output terminal H. Electrical connection between. At this time, the gate power supply voltage VGH outputs the gate pulse modulation signal Gout to the pixel array 20 via the power signal output terminal Vo, the upper bridge switch 120, and the node LX.
在第二時間段T2,該反向器140接收該導通控制訊號CT控制該上橋開關導通、下橋開關130關斷。同時,該邏輯控制選通器110對該時鐘訊號CLK及使能訊號做或非運算,當運算結果為第二數值時,在本實施方式中,該第二數值為邏輯值“0”時,該邏輯控制選通器110關斷該閘極電源輸入端L與該電源訊號輸出端Vo之間的電連接,同時使該閘極電源輸入端L與該放電輸出端H之間實現的電導通。在本實施方式中,在第二時間段內,該時鐘訊號CLK為低準位訊號,該使能訊號OE為低準位訊號。此時畫素陣列20經該上橋開關120、該放電輸出端H、該放電電阻150進行放電,以將該閘極脈衝調制訊號Gout拉低使該閘極脈衝調制訊號Gout形成一削角。 In the second time period T2, the inverter 140 receives the conduction control signal CT to control the upper bridge switch to be turned on, and the lower bridge switch 130 to be turned off. At the same time, the logic control gate 110 performs a NAND operation on the clock signal CLK and the enable signal. When the operation result is the second value, in the embodiment, when the second value is a logic value “0”, The logic control gate 110 turns off the electrical connection between the gate power input terminal L and the power signal output terminal Vo, and simultaneously enables electrical conduction between the gate power input terminal L and the discharge output terminal H. . In the second embodiment, the clock signal CLK is a low level signal, and the enable signal OE is a low level signal. At this time, the pixel array 20 is discharged through the upper bridge switch 120, the discharge output terminal H, and the discharge resistor 150 to lower the gate pulse modulation signal Gout to form a chamfer of the gate pulse modulation signal Gout.
在第三時間段T3,該導通控制訊號CT為低準位訊號,此時該反向器接收該導通控制訊號CT控制該上橋開關關斷、下橋開關130導 通,該畫素陣列20經該下橋開關130完全放電。 In the third time period T3, the conduction control signal CT is a low level signal, and the inverter receives the conduction control signal CT to control the upper bridge switch to be turned off, and the lower bridge switch 130 The pixel array 20 is completely discharged through the lower bridge switch 130.
前述的閘極脈衝調變電路10及其削角調變方法利用畫素陣列通過電阻放電使閘極電壓形成削角,從而可減少畫面閃爍現象,且本案之削角調變係藉由畫素陣列經電阻放電形成減少電壓不穩定引起的畫面透光不均勻現象。 The foregoing gate pulse modulation circuit 10 and its chamfer modulation method use a pixel array to form a chamfering voltage of a gate voltage through resistance discharge, thereby reducing flickering of the picture, and the chamfering modulation of the present case is by drawing The element array is formed by resistance discharge to reduce unevenness of light transmission caused by voltage instability.
雖然本發明以優選實施例揭示如上,然其並非用以限定本發明,任何本領域技術人員,在不脫離本發明的精神和範圍內,當可做各種的變化,這些依據本發明精神所做的變化,都應包含在本發明所要求的保護範圍之內。 While the invention has been described above in terms of a preferred embodiment thereof, it is not intended to limit the invention, and various modifications may be made by those skilled in the art without departing from the spirit and scope of the invention. Changes are intended to be included within the scope of the claimed invention.
10‧‧‧閘極脈衝調變電路 10‧‧‧ gate pulse modulation circuit
20‧‧‧畫素陣列 20‧‧‧ pixel array
110‧‧‧邏輯控制選通器 110‧‧‧Logical Control Gates
120‧‧‧上橋開關 120‧‧‧Upper bridge switch
130‧‧‧下橋開關 130‧‧‧Bridge switch
140‧‧‧反向器 140‧‧‧ reverser
150‧‧‧放電電阻 150‧‧‧discharge resistor
LX‧‧‧節點 LX‧‧‧ node
VGH‧‧‧閘極電源電壓 VGH‧‧‧ gate power supply voltage
L‧‧‧閘極電源輸入端 L‧‧‧ gate power input
H‧‧‧放電輸出端 H‧‧‧Discharge output
IN1‧‧‧第一控制訊號輸入端 IN1‧‧‧first control signal input
IN2‧‧‧第二控制訊號輸入端 IN2‧‧‧second control signal input
Vo‧‧‧電源訊號輸出端 Vo‧‧‧ power signal output
VGL‧‧‧低電壓準位 VGL‧‧‧ low voltage level
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