TWI554326B - Semiconductor exhaust gas treatment equipment - Google Patents

Description

Semiconductor exhaust gas treatment equipment

The present invention relates to an apparatus for treating exhaust gas, and more particularly to a processing apparatus for treating semiconductor exhaust gas of exhaust gas generated in a semiconductor process.

The exhaust gas emitted from the semiconductor process is not only harmful to the human body and the environment, but also flammable, explosive, and corrosive. In terms of protecting the living environment and sustainable operation, the exhaust gas must be specially treated to eliminate the exhaust gas. The harmfulness of the exhaust gas can be released into the environment.

Referring to Figure 1, a conventional exhaust gas treatment apparatus 1 includes an inlet washing unit 11 in communication with a front end manufacturing apparatus (not shown), a reaction unit 12 in communication with the inlet washing unit 11, a reaction unit 12 connected outlet washing unit 13, and a water tank unit 14 for holding washing waste water.

The inlet washing unit 11 includes a first washing body 111, a first nozzle 112 disposed in the first washing body 111, and a first nozzle 111 connected to the external water source and from the first nozzle. 111 is sprayed out of the first water inlet pipe 113. The first nozzle 112 can perform a washing operation on the exhaust gas introduced into the first washing body 111 by watering.

The reaction unit 12 includes a reaction furnace 121 and a separate communication The first washing body 111 and the input pipe 122 of the reaction furnace 121 and an output pipe 123 for outputting the reacted gas. The input pipe 122 is for inputting the gas washed by the inlet washing unit 11 into the reaction furnace 121.

The outlet washing unit 13 includes a second washing body 131 communicating with the reaction furnace 121 via the output pipe 123, a second nozzle 132 disposed in the second washing body 131, and a second nozzle 132 connected thereto. And a second inlet pipe 133 for introducing an external water source and ejected from the second nozzle 132, a valve 134 for introducing outside air into the second washing body 131, and a second washing body 131 The gas is discharged to the outside fan 135.

The water tank unit 14 includes a water tank 141, a first waste liquid pipe 142 communicating with the input pipe 122 and the water tank 141, a second waste liquid pipe 143 communicating with the output pipe 123 and the water tank 141, and a A drain pipe 144 that removes water from the water tank 141, and a drain valve 145 that is disposed in the drain pipe 144 and controls drainage.

After the exhaust gas is introduced into the inlet washing unit 11, the gas washed in the first washing body 111 passes through the input pipe 122 and enters the reaction furnace 121, and the waste liquid of the washing gas flows into the first waste liquid pipe 142. Sink 141. Then, the gas reacted in the reaction furnace 121 enters the outlet washing unit 13 via the outlet pipe 123, is washed in the second washing body 131, and is mixed with gas introduced into the outer boundary air from the valve 134. The fan 135 is discharged to the outside, and the waste liquid of the washing gas flows into the water tank 141 via the second waste liquid pipe 142.

When the exhaust gas treatment device 1 processes a certain amount of exhaust gas, the water In the tank 141, a lot of waste liquid generated after washing the exhaust gas is stored, so the waste liquid contained in the water tank 141 must be excluded. Generally, a liquid level altimeter (not shown) is disposed in the water tank 141 at the liquid level. When the height exceeds a first set value, the drain valve 145 is automatically opened to perform waste liquid removal. However, since the action of washing the exhaust gas is continued while the waste liquid is removed, the waste liquid flowing into the water tank 141 will continue to be generated. Therefore, it is usually not directly excluded from all the waste liquid, but the liquid level is lower than one. When the second set value of the first set value is reached, the drain valve 145 is automatically closed.

However, since the amount of waste liquid contained in the water tank 141 is quite large, the drain pipe 144 is also quite long. If the liquid level of the waste liquid amount is lower than the second set value, the drain valve 145 is closed momentarily because The inertia of the water creates a momentum that pushes the water against each other. This situation causes a sudden increase in the water pressure in the drain pipe 144, which is a so-called water hammer effect. The drain pipe 144 is easily broken and damaged, and even occurs. The danger of pipe bursting.

Accordingly, it is an object of the present invention to provide a semiconductor exhaust gas treating apparatus which prevents a water hammer effect from occurring when draining and which causes damage to a drain line.

Therefore, the semiconductor exhaust gas processing apparatus of the present invention is suitable for use in a semiconductor processing apparatus, and includes: an inlet washing unit connected to the semiconductor processing apparatus, a reaction unit connected to the inlet washing unit, and a reaction unit connected thereto The outlet washing unit and a water tank unit for receiving and removing the waste liquid generated by the washing waste gas.

The inlet washing unit is configured to wash the exhaust gas discharged from the semiconductor processing equipment, and the exhaust gas after the preliminary washing through the inlet washing unit is sent to the reaction unit for heat decomposition treatment, and the exhaust gas after the heat decomposition treatment, and then Delivery to the outlet washing unit is again washed and the exhaust gas is discharged.

The water tank unit includes a water tank connected to the inlet washing unit and the outlet washing unit, a drain pipe connected to the water tank for draining, and a drain proportional valve disposed in the drain pipe. The water tank is used to receive the waste liquid generated by the inlet washing unit and the outlet washing unit for washing. When the waste liquid stored in the water tank is excluded, the drainage proportional valve discharges the water volume at a certain value during the opening process, and in a closing process, the water discharge amount is gradually reduced from the fixed value to zero to be closed, thereby avoiding The water hammer effect caused by the instantaneous closing of the drain valve used during draining, thereby preventing the drain pipe from being broken and damaged by the water hammer effect.

The effect of the present invention is that a large amount of waste liquid stored in the water tank of the water tank unit can be drained during the process of closing the drain proportional valve by excluding the predetermined amount of water by the drain proportional valve provided in the drain pipe. The water discharge effect is gradually reduced by zero to a certain value, so as to avoid the water hammer effect caused by the instantaneous closing of the drainage proportional valve, and the drainage pipe is prevented from being broken and damaged by the water hammer effect.

2‧‧‧Semiconductor exhaust gas treatment equipment

21‧‧‧ entrance washing unit

211‧‧‧First washing body

212‧‧‧heating belt

213‧‧‧ Temperature detector

214‧‧‧ sprinkler

22‧‧‧Reaction unit

221‧‧‧Reaction furnace

2211‧‧‧ inner wall

2212‧‧‧ outer wall

222‧‧‧ scraper mechanism

223‧‧‧Scratch

224‧‧‧Outer scraping parts

225‧‧‧Drives

23‧‧‧Export washing unit

231‧‧‧Second washing body

232‧‧‧ sprinkler mechanism

233‧‧‧Filter ring

234‧‧‧Intake valve

235‧‧‧Exhaust mechanism

236‧‧‧Supervisor

237‧‧‧ nozzle

238‧‧‧Exhaust motor

239‧‧‧Frequency control

24‧‧‧Sink unit

241‧‧‧Sink

242‧‧‧Drainage pipe

243‧‧‧Drainage proportional valve

244‧‧‧liquid level meter

245‧‧‧ Flowmeter

X‧‧‧ value

Time t1‧‧‧

Time t2‧‧‧

Time t3‧‧‧

Other features and advantages of the present invention will be apparent from the following description of the drawings, wherein: Figure 1 is a system configuration diagram illustrating a conventional exhaust gas treatment apparatus; 2 is a system configuration diagram illustrating an embodiment of a semiconductor exhaust gas processing apparatus of the present invention; FIG. 3 is a cross-sectional view; a reaction unit of the embodiment is illustrated; and FIG. 4 is a partially enlarged view showing one of the embodiments. A sprinkler mechanism for the outlet washing unit; Fig. 5 is a perspective view showing the component composition of the sprinkler mechanism; and Fig. 6 is a line diagram illustrating the drainage process of the drain proportional valve of the embodiment.

Referring to FIG. 2, an embodiment of a semiconductor exhaust gas processing apparatus 2 of the present invention is suitable for use with a semiconductor processing apparatus (not shown), and includes: an inlet washing unit 21 connected to the semiconductor processing apparatus, and an inlet washing The unit 21 is connected to the reaction unit 22, an outlet washing unit 23 communicating with the reaction unit 22, and a water tank unit 24 for holding and removing the waste liquid generated by the washing waste gas.

This embodiment treats the exhaust gas generated by the semiconductor processing equipment by wet washing and thermal decomposition. The inlet washing unit 21 is for washing the exhaust gas discharged from the semiconductor processing equipment, and is mainly for removing the dust in the exhaust gas or the component of the water-soluble gas or the like by flushing with water. The exhaust gas that has been subjected to the preliminary washing through the inlet washing unit 21 is sent to the reaction unit 22 to be subjected to a heat decomposition treatment to decompose the exhaust gas into a harmless gas. The exhaust gas after the heat decomposition treatment is sent to the outlet washing unit 23 for washing again. The purpose of washing again is to remove the dust or water-soluble gas generated by the thermal decomposition reaction. The function of the exhaust gas temperature after low thermal decomposition treatment. After the above-mentioned wet washing and heating and decomposing exhaust gas, it can be discharged in accordance with the prescribed discharge standard.

The inlet washing unit 21 includes a first washing body 211 communicating with the semiconductor processing apparatus, a heating belt 212 for increasing the temperature of the first washing body 211, and a temperature detector disposed on the first washing body 211. The detector 213 has a plurality of sprinklers 214 disposed in the first washing body 211 and located behind the temperature detector 213. The heating belt 212 is coated on the outer surface of the first washing body 211 for the purpose of increasing the temperature of the first washing body 211 to prevent condensation when the exhaust gas contacts the inner wall surface of the first washing body 211 having a lower temperature. The dust is attached to the inner wall surface of the first washing body 211 in a large amount.

However, since some of the constituent elements of the inlet washing unit 21 are made of plastic, normal operation is affected at an excessively high temperature. The temperature detector 213 disposed on the first washing body 211 issues a prompt according to the detected temperature to prevent the plastic component from being damaged at a high temperature due to the failure of the heating belt 212 or improper control. The prompting mode of the temperature detector 213 can be set differently according to the temperature. For example, a first temperature may be set, so that the temperature detector 213 prompts the light or the warning sound when the detected temperature reaches the first temperature, and automatically turns off the light signal if the temperature is lower than the first temperature or Stop the warning sound. A second temperature higher than the first temperature may be additionally set, so that the temperature detector 213 issues a special alarm when the detected temperature reaches the second temperature, and the alarm must be manually maintained. Or artificial Can be manually removed after processing. The temperature detector 213 detects the temperature in stages and issues a prompt, thereby protecting the inlet washing unit 21. It should be particularly noted that the temperature detector 213 can set a plurality of temperature setting values, and issue different types of prompts or alarms according to the set value, and the setting is released according to the processing required by the temperature. The method of prompting or alerting is not limited to the manner described above.

Referring to FIG. 3 and FIG. 2, the reaction unit 22 includes a reaction furnace 221 connected to the inlet washing unit 21 and the outlet washing unit 23, and is disposed in cooperation with the reaction furnace 221, and is used for scraping off heat decomposition due to exhaust gas. The doctor blade mechanism 222 that adheres to the crystal of the reaction furnace 221 in response to the reaction. It is to be noted that the reason for the formation of the crystal attached to the reaction furnace 221 is that in the heat decomposition reaction carried out by the reaction furnace 221, in addition to the formation of a harmless gas, a solid crystalline salt is formed and crystallized. The salt is usually attached to the reaction furnace 221. The 221 has an inner wall surface 2211 and an outer wall surface 2212, and the squeegee mechanism 222 has an inner scraping member 223 attached to the inner wall surface 2211 and an outer scraping surface attached to the outer wall surface 2212. And a member 224, and a driving member 225 that connects the inner scraping member 223 and the outer scraping member 224 and drives the inner scraping member 223 and the outer scraping member 224 to rotate together. The driving member 225 is rotated in a spiral driving manner, and drives the inner scraping member 223 and the outer scraping member 224 to rotate, and the inner scraping member 223 scrapes off the crystal attached to the inner wall surface 2211 of the reaction furnace 221. The outer scraping member 224 scrapes off the crystal attached to the outer wall surface 2212 of the reaction furnace 221.

Referring to FIG. 2 and FIG. 4, the outlet washing unit 23 includes an The second washing body 231 connected to the reaction unit 22, the water sprinkling mechanism 232 disposed in the second washing body 231, and the filter ring 233 disposed in the second washing body 231 respectively corresponding to the water sprinkling mechanism 232 An intake valve 234 disposed on the second washing body 231 for introducing outside air, and an exhausting mechanism disposed at one end of the second washing body 231 for discharging the exhausted exhaust gas to the outside 235. It is specifically noted that, in order to facilitate the description of the components of each sprinkler mechanism 232, and to describe the interrelationship with the corresponding filter ring 233, FIG. 4 depicts only one sprinkler mechanism 232 and its corresponding filter ring 233.

Referring to Figures 4 and 5 and in conjunction with Figure 2, the purpose of the filter rings 233 is to hold the clean water sprinkled by the sprinklers 232 and filter the gas in conjunction with the filter material it fills. Therefore, whether the sprinkling mechanism 232 can uniformly and completely spray the clean water onto the filter rings 233 affects the effect of filtering the gas by the filter rings 233. As shown in FIG. 5, each sprinkler mechanism 232 has a main tube 236, and four spray heads 237 connected to the main tube 236 and directed at different angles toward the corresponding filter ring 233. The nozzles 237, which are respectively at different angles, can cooperate with each other to spray different ranges on the corresponding filter ring 233 to achieve a uniform and complete effect of watering the corresponding filter ring 233. In addition, since the sprinkler mechanisms 232 are consumables that need to be periodically replaced, by providing the showerheads 237 at different angles, it is possible to avoid the problem that the water pressure of the connected water source is insufficient to be uniformly sprayed, and When one of the nozzles 237 is clogged or fails, the range of the spray can be complemented by the other nozzles 237. Therefore, the outlet washing unit 23 equipped with the sprinkling mechanisms 232 does not need to be frequent By manual inspection and maintenance, the spray nozzles can be complemented by the cooperation of the nozzles 237, so that the time course of regular inspection and maintenance can be lengthened, and the labor and consumables cost required for inspection and maintenance can be effectively saved.

Referring again to Figure 2, the gas filtered by the filter rings 233 and washed by the sprinklers 232 will mix with the outside air introduced from the intake valve 234, thereby reducing the concentration of various components in the gas. . The exhaust mechanism 235 has an exhaust motor 238 and a frequency conversion control member 239 that cooperates with the exhaust motor 238. The exhaust motor 238 is configured to provide exhaust power to discharge the gas to the external environment, and the variable frequency control member 239 controls the exhaust motor 238 according to the requirement of the exhaust gas, and changes the rotational speed of the exhaust motor 238 at different timing points. The exhaust motor 238 is prevented from maintaining a high rotational speed when the gas to be excluded is small, thereby achieving an energy saving effect.

The water tank unit 24 includes a water tank 241 communicating with the inlet washing unit 21 and the outlet washing unit 23, a drain pipe 242 communicating with the water tank 241 for draining, and a drain proportional valve 243 disposed in the drain pipe 242. a liquid level meter 244 disposed in the water tank 241 for detecting the liquid level, and a flow meter 245 disposed in the drain pipe 242. The water tank 241 is configured to receive the waste liquid generated by the inlet washing unit 21 and the outlet washing unit 23 for washing, and when the doctor blade 222 scrapes off the crystal attached to the reaction furnace 221, the scraped crystal is also scraped. It falls into the water tank 241. When the waste liquid stored in the water tank 241 is excluded, the drain proportional valve 243 drains the water discharge amount in a certain opening process, and in a closing process, the water discharge amount is gradually reduced from the fixed value to zero. .

Wherein, when the liquid level detected by the liquid level meter 244 is greater than a first set value, the drain proportional valve 243 starts the opening process to exclude the waste liquid, and the liquid level detected by the liquid level meter 244 When the height is less than a second set value less than the first set value, the drain proportional valve 243 starts the closing process. Referring to FIG. 6 and in conjunction with FIG. 2, the drain proportional valve 243 increases the displacement from zero to the fixed value at a fixed first rate during the opening process (time 0 to time t1) (as shown in FIG. 6). x), and during the closing process (time t2 to time t3), the displacement is reduced to zero from the constant at a fixed second rate. The flow meter 245 can measure flow during the opening process and the closing process, providing flow data for monitoring and for subsequent setting reference. During the closing process, the drain proportional valve 243 is closed at a second rate to gradually reduce the displacement, and can avoid the instantaneous closing of the drain valve to generate a water hammer effect, since the drain pipe 242 does not need to withstand the water hammer effect. The high pressure can effectively extend the service life of the drain pipe 242, and the drain pipe 242 is also less prone to bursting due to excessive water pressure, and can maintain the safety of the field workers. It should be particularly noted that the drain proportional valve 243 controls the action of the switch in a program-controlled manner during the opening process and the closing process, thereby maintaining the displacement at the first rate during the opening process, and The amount of displacement is maintained at the second speed during the closing process. The first rate, the second rate, the time t1, the time t2, the time t3, and the fixed value of the displacement (as shown in FIG. 6) can change the program control setting according to the demand, so that the drainage The proportional valve 243 can be adapted to various drainage requirements by changing settings.

In summary, the proportion of drainage disposed in the drain 242 The valve 243 can reduce the displacement amount from a certain value at the second rate after the quantitative waste liquid in the water tank 241 is removed, and slowly closes to prevent the water hammer effect caused by the instantaneous closing, thereby avoiding the water hammer effect of the drain pipe 242. Damage is caused, and the object of the present invention can be achieved.

However, the above is only the embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, the simple equivalent changes and modifications made by the patent application scope and the patent specification of the present invention are still It is within the scope of the patent of the present invention.

2‧‧‧Semiconductor exhaust gas treatment equipment

21‧‧‧ entrance washing unit

211‧‧‧First washing body

212‧‧‧heating belt

213‧‧‧ Temperature detector

214‧‧‧ sprinkler

22‧‧‧Reaction unit

221‧‧‧Reaction furnace

222‧‧‧ scraper mechanism

23‧‧‧Export washing unit

231‧‧‧Second washing body

232‧‧‧ sprinkler mechanism

233‧‧‧Filter ring

234‧‧‧Intake valve

235‧‧‧Exhaust mechanism

24‧‧‧Sink unit

241‧‧‧Sink

242‧‧‧Drainage pipe

243‧‧‧Drainage proportional valve

244‧‧‧liquid level meter

245‧‧‧ Flowmeter

Claims (10)

A semiconductor exhaust gas processing apparatus, suitable for use in conjunction with a semiconductor processing apparatus, and comprising: an inlet cleaning unit coupled to the semiconductor processing apparatus for washing exhaust gas discharged from the semiconductor processing apparatus; a reaction unit, and the inlet washing The unit is connected to and is subjected to a heat decomposition treatment of the exhaust gas washed through the inlet washing unit; an outlet washing unit is connected to the reaction unit for washing the exhaust gas after the heat decomposition treatment via the reaction unit, and discharging the exhaust gas; And a water tank unit, comprising a water tank connected to the inlet washing unit and the outlet washing unit, a drain pipe connected to the water tank for draining, and a drain proportional valve disposed in the drain pipe, the water tank being used for Receiving the waste liquid generated by the inlet washing unit and the outlet washing unit for washing, and when the waste liquid stored in the water tank is excluded, the drainage proportional valve discharges a certain value during the opening process, and drains During the closing process, the displacement is gradually reduced from the constant value to zero and closed. The processing apparatus for semiconductor exhaust gas according to claim 1, wherein the drain proportional valve increases the displacement from zero to the constant value at a fixed first rate during the opening, and in the closing process, From this setting, the displacement is reduced to zero at a fixed second rate. The semiconductor exhaust gas processing apparatus of claim 1, wherein the inlet washing unit comprises a first communication with the semiconductor processing apparatus a heating body, a heating belt for increasing the temperature of the first washing body, a temperature detector disposed on the first washing body, and a plurality of the temperature detecting devices disposed in the first washing body and located at the temperature detecting After the sprinkler, the temperature detector will prompt according to the detected temperature. The processing apparatus for semiconductor exhaust gas according to claim 1, wherein the reaction unit comprises a reaction furnace connected to the inlet washing unit and the outlet washing unit, and a reaction furnace is provided for scraping off the heating due to the exhaust gas. A doctor mechanism that decomposes the reaction and adheres to the crystal of the reactor, and the crystals scraped off by the doctor mechanism are dropped into the water tank. The apparatus for processing semiconductor exhaust gas according to claim 4, wherein the reaction furnace has an inner wall surface and an outer wall surface, and the doctor blade mechanism has an inner scraping member attached to the inner wall surface, and attached to the outer surface The outer scraping member of the wall surface, and a driving member that connects the inner scraping member and the outer scraping member and can drive the inner scraping member and the outer scraping member to rotate together. The apparatus for processing semiconductor exhaust gas according to claim 1, wherein the outlet washing unit comprises a second washing body in communication with the reaction unit, at least one sprinkling mechanism disposed in the second washing body, at least one pair a filter ring disposed in the second washing body, a gas inlet valve disposed on the second washing body for introducing outside air, and one end disposed on the second washing body and used for The washed exhaust gas is discharged to an external exhaust mechanism. The semiconductor exhaust gas processing apparatus according to claim 6, wherein the sprinkling The water mechanism has a main pipe, and a plurality of spray heads connected to the main pipe and respectively facing the corresponding filter rings at different angles. The semiconductor waste gas processing apparatus of claim 1, wherein the water tank unit further comprises a liquid level meter disposed in the water tank for detecting a liquid level. The processing device for semiconductor exhaust gas according to claim 8, wherein when the liquid level detected by the liquid level meter is greater than a first set value, the drain proportional valve starts the opening process to remove the waste liquid. When the level of the liquid level detected by the level gauge is less than a second set value less than the first set value, the drain proportional valve begins the closing process. The semiconductor exhaust gas processing apparatus of claim 1, wherein the water tank unit further comprises a flow meter disposed in the drain pipe.