TWI550131B - The circuit of the substrate directly forms the system - Google Patents
The circuit of the substrate directly forms the system Download PDFInfo
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- TWI550131B TWI550131B TW104130957A TW104130957A TWI550131B TW I550131 B TWI550131 B TW I550131B TW 104130957 A TW104130957 A TW 104130957A TW 104130957 A TW104130957 A TW 104130957A TW I550131 B TWI550131 B TW I550131B
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- 239000000758 substrate Substances 0.000 title claims description 72
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 63
- 239000002243 precursor Substances 0.000 claims description 32
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 19
- 238000000059 patterning Methods 0.000 claims description 15
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 13
- 238000005859 coupling reaction Methods 0.000 claims description 13
- 230000008878 coupling Effects 0.000 claims description 12
- 239000007822 coupling agent Substances 0.000 claims description 12
- 238000010168 coupling process Methods 0.000 claims description 12
- 238000007772 electroless plating Methods 0.000 claims description 12
- 238000001465 metallisation Methods 0.000 claims description 12
- 229910052759 nickel Inorganic materials 0.000 claims description 11
- 229910000078 germane Inorganic materials 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 238000007747 plating Methods 0.000 claims description 8
- 239000003054 catalyst Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- CRSBERNSMYQZNG-UHFFFAOYSA-N 1-dodecene Chemical compound CCCCCCCCCCC=C CRSBERNSMYQZNG-UHFFFAOYSA-N 0.000 claims description 4
- MHZGKXUYDGKKIU-UHFFFAOYSA-N Decylamine Chemical compound CCCCCCCCCCN MHZGKXUYDGKKIU-UHFFFAOYSA-N 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 4
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 229920000106 Liquid crystal polymer Polymers 0.000 claims description 3
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 claims description 3
- 239000004954 Polyphthalamide Substances 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 150000001261 hydroxy acids Chemical class 0.000 claims description 3
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 claims description 3
- 229920000515 polycarbonate Polymers 0.000 claims description 3
- 239000004417 polycarbonate Substances 0.000 claims description 3
- 229920006375 polyphtalamide Polymers 0.000 claims description 3
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 2
- 229910019142 PO4 Inorganic materials 0.000 claims description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 239000004310 lactic acid Substances 0.000 claims description 2
- 235000014655 lactic acid Nutrition 0.000 claims description 2
- 239000001630 malic acid Substances 0.000 claims description 2
- 235000011090 malic acid Nutrition 0.000 claims description 2
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 claims description 2
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 claims description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 2
- 239000010452 phosphate Substances 0.000 claims description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Natural products C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims 1
- 229920001577 copolymer Polymers 0.000 claims 1
- 238000009713 electroplating Methods 0.000 claims 1
- 239000002159 nanocrystal Substances 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- MWKFXSUHUHTGQN-UHFFFAOYSA-N decan-1-ol Chemical compound CCCCCCCCCCO MWKFXSUHUHTGQN-UHFFFAOYSA-N 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 239000012696 Pd precursors Substances 0.000 description 2
- XECAHXYUAAWDEL-UHFFFAOYSA-N acrylonitrile butadiene styrene Chemical compound C=CC=C.C=CC#N.C=CC1=CC=CC=C1 XECAHXYUAAWDEL-UHFFFAOYSA-N 0.000 description 2
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 2
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000002738 chelating agent Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- JZHKIUBMQMDQRG-UHFFFAOYSA-N C(=C)C(C(OC)(OC)OC)CCCCCCCC Chemical compound C(=C)C(C(OC)(OC)OC)CCCCCCCC JZHKIUBMQMDQRG-UHFFFAOYSA-N 0.000 description 1
- XJDCHDFUMGSEHD-UHFFFAOYSA-N NCCCC(C(OC)(OC)OC)CCCCCCCC Chemical compound NCCCC(C(OC)(OC)OC)CCCCCCCC XJDCHDFUMGSEHD-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011960 computer-aided design Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- -1 polyimine Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- Chemically Coating (AREA)
Description
本發明涉及一種基板的電路形成系統，且特別是有關於一種基板的電路直接形成系統。 The present invention relates to a circuit forming system for a substrate, and more particularly to a circuit direct forming system for a substrate.
目前，大多數印刷電路板為透過微影蝕刻製程所製造，在一般的加工製程中，使用以玻璃纖維或是環氧樹酯組成的複合材料作為基板，接著於基板上覆蓋一層銅材質等的金屬，利用光阻劑覆蓋銅，並利用射線將光罩的圖案投影在負光阻劑上，光阻劑未曝光的部份被顯像出來，之後，曝光的銅被蝕刻，最後移除剩餘的光阻劑而在基板上形成電路。製程過程中會大量使用到光阻劑及金屬材料，然而金屬材料因蝕刻而被移除，相對的在材料上面造成不必要的浪費。 At present, most printed circuit boards are manufactured by a photolithography process. In a general processing process, a composite material composed of glass fiber or epoxy resin is used as a substrate, and then a copper material is coated on the substrate. Metal, using a photoresist to cover the copper, and using a ray to project the pattern of the reticle onto the negative photoresist, the unexposed portion of the photoresist is developed, after which the exposed copper is etched, and finally the remaining The photoresist forms a circuit on the substrate. The photoresist and the metal material are used in a large amount in the process, but the metal material is removed by etching, which causes unnecessary waste on the material.
另一種印刷電路板的方法為透過雷射進行圖案化，將覆蓋金屬層的基板透過雷射的熱能，按照預定圖案在基板燒蝕部分厚度的基板材料，進而形成電路圖案。透過雷射方法形成電路可製造出精密的線路及間距，然而在燒蝕過程中，仍會造成基板材料的起泡，或是油墨造成圖案的汙損，仍有其限制在。 Another method of printing a circuit board is to perform patterning by laser, and the substrate covering the metal layer is transmitted through the thermal energy of the laser to ablate a portion of the substrate material in a predetermined pattern to form a circuit pattern. The formation of circuits by laser methods can produce precise lines and pitches. However, during the ablation process, foaming of the substrate material or ink staining of the pattern is still caused.
本發明提出一種基板的電路直接形成系統，能夠在形成精密電路的同時，還能有效降低成本。 The invention provides a circuit direct forming system of a substrate, which can effectively reduce the cost while forming a precision circuit.
本發明提供一種基板的電路直接形成系統，依序包括：偶聯浴槽、圖案化設備以及金屬沉積設備。其中該圖案化設備中依序包括紫外線曝光設備及臭氧源，該金屬沉積設備中依序包括前驅物浴槽及化學電鍍浴槽，以及本發明之系統在該金屬沉積設備之後包含紅外線設備。 The invention provides a circuit direct forming system of a substrate, which comprises: a coupling bath, a patterning device and a metal deposition device. Wherein the patterning device comprises an ultraviolet exposure device and an ozone source in sequence, the metal deposition device sequentially includes a precursor bath and a chemical plating bath, and the system of the invention comprises an infrared device after the metal deposition device.
偶聯浴槽，設置有矽烷偶聯劑，用以在基板浸泡於偶聯浴槽中時，使基板上形成由矽烷分子鍵結的矽烷層。圖案化設備，包括紫外線曝光設備，提供紫外線，用以照射矽烷層，以移除矽烷層受該紫外光照射的部分，使未移除部分的矽烷層做為電路圖案；以及臭氧源，提供臭氧與電路圖案的表面反應，使電路圖案的表面形成矽烷醇層。金屬沉設備，包括前驅物浴槽，設置有前驅物的溶液，在形成有矽烷醇層的基板浸泡於前驅物浴槽中時，使矽烷醇層與前驅物鍵結形成；以及化學電鍍浴槽，設置有一化學鍍鎳溶液，在該矽烷醇層與前驅物鍵結的該基板浸泡於該化學電鍍浴槽中時，使該矽烷醇層表面形成該電路層。紅外線設備，提供一紅外線，用以照射形成該電路層的該基板。 The coupling bath is provided with a decane coupling agent for forming a decane layer bonded by a decane molecule on the substrate when the substrate is immersed in the coupling bath. A patterning apparatus, including an ultraviolet exposure apparatus, providing ultraviolet light for illuminating the decane layer to remove a portion of the decane layer that is irradiated with the ultraviolet light, so that the unremoved portion of the decane layer is used as a circuit pattern; and an ozone source for providing ozone Reacting with the surface of the circuit pattern causes the surface of the circuit pattern to form a stanol layer. a metal sinking device comprising a precursor bath, a solution provided with a precursor, a stanol layer and a precursor are bonded when the substrate having the stanol layer is immersed in the precursor bath; and a chemical plating bath is provided The electroless nickel plating solution is formed on the surface of the stanol layer when the substrate in which the stanol layer is bonded to the precursor is immersed in the electroless plating bath. An infrared device provides an infrared ray for illuminating the substrate forming the circuit layer.
因此，本發明之基板的電路直接形成系統可節省大量的光阻劑及金屬材料，因而實現產生極大經濟效益及兼顧綠色環保之的目的。 Therefore, the circuit directly forming system of the substrate of the present invention can save a large amount of photoresist and metal materials, thereby achieving the purpose of generating great economic benefits and taking environmental protection into consideration.
1‧‧‧基板的電路直接形成系統 1‧‧‧The circuit of the substrate directly forms the system
10‧‧‧偶聯浴槽 10‧‧‧ coupling bath
20‧‧‧圖案化設備 20‧‧‧Drawing equipment
30‧‧‧金屬化設備 30‧‧‧Metalization equipment
40‧‧‧紅外線設備 40‧‧‧Infrared equipment
210‧‧‧紫外線曝光設備 210‧‧‧UV exposure equipment
220‧‧‧臭氧源 220‧‧‧Ozone source
310‧‧‧前驅物浴槽 310‧‧‧Precursor bath
320‧‧‧化學電鍍浴槽 320‧‧‧Chemical plating bath
第1圖顯示本發明一實施例之基板的電路直接形成系統的示意圖。 Fig. 1 is a view showing a circuit direct forming system of a substrate according to an embodiment of the present invention.
第2圖顯示第1圖中圖案化設備及金屬沉積設備的示意圖。 Figure 2 shows a schematic view of the patterning device and the metal deposition apparatus in Figure 1.
以下配合圖示及符號對本發明之實施方式做更詳細的說 明，俾使熟習該項技藝者在研讀本說明書後能夠據以實施。 The embodiments of the present invention will be described in more detail below with reference to the drawings and symbols. Ming, the skilled person can implement this specification after studying this manual.
參閱第1圖，本發明提供一種基板的電路直接形成系統1，依序包括：清潔裝置(圖中未顯示)、偶聯浴槽10，圖案化設備20、金屬沉積設備30，以及紅外線設備40，可在基板上直接形成電路。 Referring to FIG. 1 , the present invention provides a circuit direct forming system 1 for a substrate, comprising: a cleaning device (not shown), a coupling bath 10, a patterning device 20, a metal deposition device 30, and an infrared device 40. The circuit can be formed directly on the substrate.
在本實施例中，基板的材料根據預定需求，可為液晶聚合物、聚鄰苯二甲醯胺、聚碳酸酯、聚醯亞胺、丙烯腈-丁二烯-苯乙烯共聚物、以及無覆銅玻璃或環氧樹酯的其中之一的材料所構成。其中液晶聚合物、聚鄰苯二甲醯胺、聚碳酸酯、丙烯腈-丁二烯-苯乙烯共聚物適用於模製互連裝置(MID,Molded interconnect Device)基板，環氧樹酯材料適用於剛性電路基板，聚醯亞胺適用於軟性基板。 In this embodiment, the material of the substrate may be a liquid crystal polymer, polyphthalamide, polycarbonate, polyimine, acrylonitrile-butadiene-styrene copolymer, and none according to predetermined requirements. A material consisting of one of copper-clad glass or epoxy resin. Among them, liquid crystal polymer, polyphthalamide, polycarbonate, acrylonitrile-butadiene-styrene copolymer are suitable for MID (Molded interconnect Device) substrate, and epoxy resin material is suitable. For rigid circuit substrates, polyimides are suitable for flexible substrates.
偶聯浴槽10設置有矽烷偶聯劑溶液。在本實施例中，使用的矽烷偶聯劑的成分包括甲矽烷。此外，根據上述基板材料的不同，使用的矽烷偶聯劑更可包括乙烯基矽烷及氨基矽烷兩者的至少其中之一。其中乙烯基矽烷可為乙烯基三甲氧基矽烷，氨基矽烷可為3-氨基丙基三甲氧基矽烷，且乙烯基矽烷及氨基矽烷的成分占矽烷偶聯劑溶液2%重量比。 The coupling bath 10 is provided with a solution of a decane coupling agent. In the present embodiment, the component of the decane coupling agent used includes decane. Further, depending on the substrate material described above, the decane coupling agent used may further include at least one of vinyl decane and amino decane. The vinyl decane may be vinyl trimethoxy decane, the amino decane may be 3-aminopropyl trimethoxy decane, and the components of vinyl decane and amino decane account for 2% by weight of the decane coupling agent solution.
如第2圖所示，圖案化設備20可包括提供選擇性圖案化的紫外線曝光設備210，以及產生臭氧的臭氧源220。在本實施例中，紫外線曝光設備210所使用的光罩係透過具有由電腦輔助設計-電腦輔助(CAD-CAM,computer-aided design and computer-aided manufacturing)製造，具有更精密的線路及間距。金屬沉積設備30可包括設置有氯化鈀的前驅物水溶液的前驅物浴槽310，以及設置有有含鎳的化學電鍍水溶液的化學電鍍浴槽320。在本實施例中，含鎳的化學電鍍水溶液的成分包括硫酸鎳、低磷酸鹽類、羥 基酸、及抗催化劑，其中鎳金屬在水溶液中的濃度為8g/L，羥基酸包括乳酸及蘋果酸以作為螯合劑，抗催化劑包括含錫的複合物。 As shown in FIG. 2, the patterning apparatus 20 can include an ultraviolet exposure apparatus 210 that provides selective patterning, and an ozone source 220 that produces ozone. In the present embodiment, the reticle used in the ultraviolet ray exposure apparatus 210 is manufactured by computer-aided design and computer-aided manufacturing (CAD-CAM), and has more precise wiring and spacing. The metal deposition apparatus 30 may include a precursor bath 310 provided with an aqueous solution of a precursor of palladium chloride, and a chemical plating bath 320 provided with an aqueous electroless plating solution containing nickel. In this embodiment, the composition of the nickel-containing electroless plating aqueous solution includes nickel sulfate, low phosphate, and hydroxyl The base acid and the anti-catalyst, wherein the concentration of the nickel metal in the aqueous solution is 8 g/L, the hydroxy acid includes lactic acid and malic acid as a chelating agent, and the anti-catalyst comprises a tin-containing composite.
紅外線設備40提供紅外線進行照射。在本實施例中，紅外線設備40所使用的紅外線係波長範圍為80~150μm，能量範圍為80~150meV之熱遠紅外線(Thermal infrared,TIR)。 The infrared device 40 provides infrared rays for irradiation. In the present embodiment, the infrared ray device 40 uses an infrared ray having a wavelength range of 80 to 150 μm and an energy range of 80 to 150 meV (Thermal infrared (TIR)).
以下將配合第1圖與第2圖來說明基板上直接形成電路的製造流程。首先，當基板送入清潔裝置(圖中未顯示)之後，清潔裝置清洗及潤濕基板。 Hereinafter, the manufacturing flow of the circuit directly formed on the substrate will be described with reference to FIGS. 1 and 2. First, after the substrate is fed into a cleaning device (not shown), the cleaning device cleans and wets the substrate.
當清洗完的基板浸泡於偶聯浴槽10的矽烷偶聯劑溶液中時，矽烷偶聯劑與基板之間產生偶聯反應，使基板上形成由矽烷分子共價鍵結的矽烷層。在本實施例中所形成的矽烷層厚度約200Å。 When the cleaned substrate is immersed in the decane coupling agent solution of the coupling bath 10, a coupling reaction occurs between the decane coupling agent and the substrate to form a decane layer covalently bonded by the decane molecule on the substrate. The thickness of the germane layer formed in this embodiment is about 200 Å.
在基板上形成矽烷層之後，將基板送入圖案化設備20。首先，紫外線曝光設備210會將紫外線照射基板上的矽烷層，如同正光阻曝光模式，受紫外線照射的矽烷層的矽烷鍵結分解形成自由基鏈，形成自由基鏈的矽烷可輕易、選擇性地被移除，進而留下未移除且形成圖案的矽烷層，作為電路圖案。在本實施例中，基板係水平放置於紫外線曝光設備210，在基板的上方及下方分別設置兩組獨立控制的紫外線光源(圖中未顯示)，並藉由紫外線曝光設備210所使用的光罩，可於基板上形成二維的電路圖案。在另一未繪示的實施例中，對於形成於MID基板上的三維的電路圖案，可進一步在相對於基板水平位置的垂直位置上設置第三組紫外線光源。 After the germane layer is formed on the substrate, the substrate is fed into the patterning device 20. First, the ultraviolet exposure apparatus 210 irradiates the decane layer on the substrate with ultraviolet rays, and like the positive photoresist exposure mode, the decane bond of the arsenic layer irradiated by the ultraviolet light is decomposed to form a radical chain, and the decane forming the radical chain can be easily and selectively It is removed, leaving a non-removed and patterned germane layer as a circuit pattern. In this embodiment, the substrate is horizontally placed on the ultraviolet exposure apparatus 210, and two sets of independently controlled ultraviolet light sources (not shown) are disposed above and below the substrate, and the mask used by the ultraviolet exposure apparatus 210 is used. A two-dimensional circuit pattern can be formed on the substrate. In another embodiment not shown, a third set of ultraviolet light sources may be further disposed at a vertical position relative to the horizontal position of the substrate for the three-dimensional circuit pattern formed on the MID substrate.
在基板上的矽烷層形成電路圖案後，臭氧源20提供波長範圍在184.9nm~253.7nm的紫外線，誘使氧氣形成臭氧，接著臭氧分解成帶有 自由基的活性氧，進一步與形成電路圖案的矽烷層表面反應，使表面的矽烷快速水解成具有羥基之矽烷醇，因而在矽烷層的表面形成矽烷醇層，接著將基板通過淋浴裝置(圖中未顯示)，以去離子水清洗基板表面。 After the circuit pattern of the germane layer on the substrate is formed, the ozone source 20 provides ultraviolet light having a wavelength ranging from 184.9 nm to 253.7 nm, which induces oxygen to form ozone, and then the ozone is decomposed into a strip. The reactive oxygen of the radical further reacts with the surface of the decane layer forming the circuit pattern to rapidly hydrolyze the surface decane to a stanol having a hydroxyl group, thereby forming a stanol layer on the surface of the decane layer, and then passing the substrate through the shower device (in the figure) Not shown), the surface of the substrate was washed with deionized water.
在矽烷層上形成矽烷醇層之後，再將基板送入金屬沉積設備30。首先，將基板浸泡於前驅物浴槽310，矽烷醇上的羥基與氯化鈀形成共價鍵結，在矽烷層上形成矽烷醇層與鈀所組成的前驅物層，以作為化學電鍍的催化劑，接著將基板通過淋浴裝置(圖中未顯示)，以去離子水清洗基板表面。在本實施例中所形成的前驅物層厚度約為100Å。 After the stanol layer is formed on the decane layer, the substrate is fed to the metal deposition apparatus 30. First, the substrate is immersed in the precursor bath 310, the hydroxyl group on the decyl alcohol is covalently bonded with palladium chloride, and a precursor layer composed of a stanol layer and palladium is formed on the decane layer to serve as a catalyst for electroless plating. The substrate is then passed through a shower (not shown) to clean the surface of the substrate with deionized water. The thickness of the precursor layer formed in this embodiment is about 100 Å.
在矽烷層上形成前驅物層之後，將基板浸泡於化學電鍍浴槽320，透過前驅物的催化，在矽烷醇層的表面上形成由奈米結晶的鈀-鎳金屬組成的電路層，接著將基板通過淋浴裝置(圖中未顯示)，以去離子水清洗基板，以實現在基板上直接形成電路。在本實施例中，電路層中所形成的鈀-鎳結晶尺寸為0.9μm，組成的比例為鈀：鎳=5：95重量%，厚度約為800Å，導電度可達59.0x106S/m；並且透過螯合劑及抗催化劑提供良好的沉積環境，因此可確保電路層形成的過程中不會產生結節或凹痕。 After the precursor layer is formed on the germane layer, the substrate is immersed in the electroless plating bath 320, and a circuit layer composed of nanocrystalline palladium-nickel metal is formed on the surface of the stanol layer by the catalysis of the precursor, and then the substrate is passed. A shower device (not shown) cleans the substrate with deionized water to form a circuit directly on the substrate. In this embodiment, the palladium-nickel crystal size formed in the circuit layer is 0.9 μm, the composition ratio is palladium: nickel = 5:95% by weight, the thickness is about 800 Å, and the conductivity is up to 59.0 x 10 6 S/m. And provide a good deposition environment through the chelating agent and the anti-catalyst, thus ensuring no nodules or dents during the formation of the circuit layer.
進一步地，在基板上直接形成電路後，將基板送入紅外線設備40，對形成電路的基板照射近距離照射紅外線。前驅物層吸收遠紅外線後，矽烷醇中未反應的羥基與鈀金屬反應，脫去一個水分子後形成共價鍵結，可進一步確保電路層與矽烷層之間的接著力。進一步來說，由於本實施例之紅外線設備40可採用熱遠紅外線，其穿透的厚度為5μm的範圍，可使前驅物層有效吸收熱遠紅外線之能量產生進一步地共價鍵結，可確保電路層與矽烷層之間的接著力，因此本實施例之電路的剝離接著強度(90度角) 可大於1kg/cm，伸長強度可大於1kg/mm2。 Further, after the circuit is directly formed on the substrate, the substrate is sent to the infrared device 40, and the substrate on which the circuit is formed is irradiated with infrared rays at a short distance. After the precursor layer absorbs far infrared rays, the unreacted hydroxyl group in the stanol reacts with the palladium metal, and a water molecule is removed to form a covalent bond, which further ensures the adhesion between the circuit layer and the decane layer. Further, since the infrared device 40 of the present embodiment can adopt thermal far infrared rays, the penetration thickness thereof is in the range of 5 μm, so that the precursor layer can effectively absorb the energy of the far far infrared rays to generate further covalent bonding, thereby ensuring The adhesion between the circuit layer and the decane layer, so the peeling strength (90 degree angle) of the circuit of the present embodiment may be greater than 1 kg/cm, and the elongation strength may be greater than 1 kg/mm 2 .
在本發明的另一實施方式中，化學電鍍浴槽320中可將含鎳的化學電鍍溶液置換成含銅的化學電鍍溶液，並在前驅物層上沉積一層金屬銅，作為電路層。 In another embodiment of the present invention, the electroless plating bath 320 may be substituted with a nickel-containing electroless plating solution to form a copper-containing electroless plating solution, and a layer of metallic copper may be deposited on the precursor layer as a circuit layer.
上述本發明各實施例之基板的電路直接形成系統，其特點在於設置有矽烷偶聯劑溶液的偶聯浴槽，將基板浸泡於偶聯浴槽中，透過化學反應使基板與矽烷偶聯劑產生共價鍵鍵結，並形成矽烷層；以及包含紫外線曝光設備及臭氧源的圖案化設備，紫外線設備透過CAD-CAM所製成的光罩使矽烷層受紫外線照射，進一步圖案化形成電路圖案。相較於雷射電路形成系統，可在提供更精密的電路圖案及間距的同時，亦可避免雷射製程因熱源而對電路圖案造成起泡或汙損等缺點。 The circuit of the substrate of the embodiments of the present invention directly forms a system, characterized in that a coupling bath provided with a solution of a decane coupling agent is used, the substrate is immersed in a coupling bath, and a substrate is co-polymerized with a decane coupling agent through a chemical reaction. The valence bond is bonded to form a decane layer; and a patterning device comprising an ultraviolet exposure device and an ozone source, the ultraviolet ray device is irradiated with ultraviolet rays by a photomask made of CAD-CAM, and further patterned to form a circuit pattern. Compared with the laser circuit forming system, it can provide more precise circuit patterns and spacing, and can also avoid the shortcomings of the laser process causing blistering or fouling of the circuit pattern due to the heat source.
本發明之基板的電路直接形成系統另一特點在於利用正光阻曝光模式，圖案化的矽烷層形成電路結構之一部分，可減少光阻劑的使用量；透過矽烷醇與鈀前驅物的共價鍵結形成前驅物層，以及在前驅物層上進行化學電鍍沉積，亦可減少鈀前驅物及電鍍金屬的使用量，因此在經濟效益上可大幅減少上述圖案化所需的昂貴材料。 Another feature of the circuit direct formation system of the substrate of the present invention is that the positive photoresist resistive mode, the patterned germanium layer forms part of the circuit structure, can reduce the amount of photoresist used; and the covalent bond of the decyl alcohol and the palladium precursor The formation of the precursor layer and the electroless plating on the precursor layer also reduce the amount of palladium precursor and plating metal used, thereby greatly reducing the costly material required for the above patterning.
以上所述者僅為用以解釋本發明之較佳實施例，並非企圖據以對本發明做任何形式上之限制，是以，凡有在相同之發明精神下所作有關本發明之任何修飾或變更，皆仍應包括在本發明意圖保護之範疇。 The above is only a preferred embodiment for explaining the present invention, and is not intended to limit the present invention in any way, and any modifications or alterations to the present invention made in the spirit of the same invention. All should still be included in the scope of the intention of the present invention.
1‧‧‧電路直接形成系統 1‧‧‧Circuit direct formation system
10‧‧‧偶聯浴槽 10‧‧‧ coupling bath
20‧‧‧圖案化設備 20‧‧‧Drawing equipment
30‧‧‧金屬化設備 30‧‧‧Metalization equipment
40‧‧‧紅外線設備 40‧‧‧Infrared equipment
210‧‧‧紫外線曝光設備 210‧‧‧UV exposure equipment
220‧‧‧臭氧源 220‧‧‧Ozone source
310‧‧‧前驅物浴槽 310‧‧‧Precursor bath
320‧‧‧化學電鍍浴槽 320‧‧‧Chemical plating bath
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06202343A (en) * | 1992-09-09 | 1994-07-22 | Philips Electron Nv | Method for chemical denaturation of surface according to pattern |
| TW280837B (en) * | 1992-06-29 | 1996-07-11 | Philips Electronics Nv | |
| JP2007149711A (en) * | 2005-10-29 | 2007-06-14 | Iwate Univ | Organic thin-film transistor device, manufacturing method thereof and method of forming metal thin film |
| TW200800609A (en) * | 2006-02-20 | 2008-01-01 | Daicel Chem | Porous membrane film and laminate using the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW280837B (en) * | 1992-06-29 | 1996-07-11 | Philips Electronics Nv | |
| JPH06202343A (en) * | 1992-09-09 | 1994-07-22 | Philips Electron Nv | Method for chemical denaturation of surface according to pattern |
| JP2007149711A (en) * | 2005-10-29 | 2007-06-14 | Iwate Univ | Organic thin-film transistor device, manufacturing method thereof and method of forming metal thin film |
| TW200800609A (en) * | 2006-02-20 | 2008-01-01 | Daicel Chem | Porous membrane film and laminate using the same |
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