CN107708320A - The circuit of substrate directly forms system - Google Patents
The circuit of substrate directly forms system Download PDFInfo
- Publication number
- CN107708320A CN107708320A CN201610645638.XA CN201610645638A CN107708320A CN 107708320 A CN107708320 A CN 107708320A CN 201610645638 A CN201610645638 A CN 201610645638A CN 107708320 A CN107708320 A CN 107708320A
- Authority
- CN
- China
- Prior art keywords
- layer
- circuit
- substrate
- directly forms
- silane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
- H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
- H05K3/185—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method by making a catalytic pattern by photo-imaging
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/072—Electroless plating, e.g. finish plating or initial plating
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemically Coating (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
A kind of circuit of substrate directly forms system, sequentially includes：One coupling bath, is provided with silane coupler, when the substrate is soaked in the coupling bath, to make to form the silylation layer being bonded by silane molecule on the substrate；One patterning equipment, optionally to pattern the silylation layer, the silylation layer is set to form a circuit pattern, and make the surface of the circuit pattern react to form a silane alcohol layer；And a metal deposit equipment, to allow the silane alcohol layer and a predecessor to be bonded to form precursor layer, and in the enterprising row metal deposition of the precursor layer, so that the silanol layer surface directly forms a circuit layer.It can implement and circuit is formed in direct substrate.
Description
Technical field
The present invention relates to a kind of circuit of substrate to form system, and is directly formed in particular to a kind of circuit of substrate
System.
Background technology
At present, most of printed circuit board (PCB)s are through manufactured by micro image etching procedure, in general procedure for processing, are used
Using the composite that glass fibre or epoxy resin form as substrate, then in the gold that one layer of copper material etc. is covered on substrate
Category, copper is covered using photoresist, and the pattern of light shield is projected on negative photoresist using ray, the unexposed part of photoresist
It is rasterized out, afterwards, the copper of exposure is etched, and is finally removed remaining photoresist and is formed circuit on substrate.Processing procedure mistake
Cheng Zhonghui largely uses photoresist and metal material, but metal material is removed because of etching, relative on material
Cause unnecessary waste.
The method of another printed circuit board (PCB) passes through laser to be patterned through laser, by the substrate for covering metal level
Heat energy, according to predetermined pattern substrate ablating part thickness baseplate material, and then formed circuit pattern.Through laser means
The circuit and spacing of precision can be produced by forming circuit, but in ablation process, the foaming of baseplate material can be still caused, or
Ink causes being stained for pattern, still has it to be limited in.
The content of the invention
The present invention proposes that a kind of circuit of substrate directly forms system, can be while precision circuit is formed, moreover it is possible to have
Effect reduces cost.
The present invention provides a kind of circuit of substrate and directly forms system, sequentially includes：Be coupled bath, patterning equipment and
Metal deposit equipment.Sequentially include ultraviolet exposure equipment and ozone source, the metal deposit equipment wherein in the patterning equipment
In sequentially include predecessor bath and electroless plating bath, and the present invention system after the metal deposit equipment comprising red
External plant.
Be coupled bath, be provided with silane coupler, to substrate be soaked in coupling bath in when, make on substrate formed by
The silylation layer of silane molecule bond.Patterning equipment, including ultraviolet exposure equipment, there is provided ultraviolet, to irradiate silylation layer,
To remove part of the silylation layer by the ultraviolet light, the silylation layer for making not removing part is as circuit pattern；And ozone source,
The surface for providing ozone and circuit pattern is reacted, and the surface of circuit pattern is formed silane alcohol layer.Metal deposit equipment, including it is preceding
Thing bath is driven, the solution of predecessor is provided with, when the substrate formed with silane alcohol layer is soaked in predecessor bath, makes silane
Alcohol layer is bonded to be formed with predecessor；And electroless plating bath, a chemical nickel-plating solution is provided with, in the silane alcohol layer and forerunner
When the substrate of thing bond is soaked in the electroless plating bath, the silanol layer surface is set to form the circuit layer.Infrared ray is set
It is standby, there is provided an infrared ray, to irradiate the substrate to form the circuit layer.
Therefore, the circuit of substrate of the invention, which directly forms system, can save substantial amounts of photoresist and metal material, thus
Realize and produce very big economic benefit and take into account green purpose.
Brief description of the drawings
Fig. 1 shows that the circuit of the substrate of one embodiment of the invention directly forms the schematic diagram of system.
Fig. 2 shows patterning equipment and the schematic diagram of metal deposit equipment in Fig. 1.
The circuit of 1 substrate directly forms system
10 coupling baths
20 patterning equipments
30 metal deposit equipment
40 infrored equipments
210 ultraviolet exposure equipment
220 ozone sources
310 predecessor baths
320 electroless plating baths
Embodiment
Icon and symbol is coordinated to do more detailed description to embodiments of the present invention below, so that those skilled in the art
It can implement according to this after this specification is studied carefully.
Refering to Fig. 1, the present invention provides a kind of circuit of substrate and directly forms system 1, sequentially includes：Cleaning device is (in figure
Do not show), coupling bath 10, patterning equipment 20, metal deposit equipment 30, and infrored equipment 40 can be straight on substrate
Connect to form circuit.
In the present embodiment, the material of substrate can be liquid crystal polymer, polyphthalamide, gather according to predetermined demand
Carbonic ester, polyimides, acrylonitrile-butadiene-styrene copolymer, nothing cover one of copper glass and epoxy resin
Material is formed.Wherein liquid crystal polymer, polyphthalamide, makrolon, acrylonitrile-butadiene-styrene copolymer
Suitable for molded interconnection device (MID, Molded interconnect Device) substrate, epoxy resin material is applied to rigidity
Circuit substrate, polyimides are applied to flexible base plate.
Coupling bath 10 is provided with silane coupler solution.In the present embodiment, the silane coupler used into subpackage
Include monosilane.In addition, according to the difference of aforesaid substrate material, the silane coupler used more may include vinyl silanes and amino
At least one of both silane.Wherein vinyl silanes can be vinyltrimethoxy silane, and amino silane can be 3- ammonia
Base propyl trimethoxy silicane, and the composition of vinyl silanes and amino silane accounts for the weight ratio of silane coupler solution 2%.
As shown in Fig. 2 patterning equipment 20 may include to provide the ultraviolet exposure equipment 210 selectively patterned, and
Produce ozoniferous ozone source 220.In the present embodiment, light shield used in ultraviolet exposure equipment 210 is to pass through to have by counting
Calculation machine Computer Aided Design-area of computer aided (CAD-CAM, computer-aided design and computer-aided
Manufacturing) manufacture, there is more accurate circuit and spacing.Metal deposit equipment 30 may include to be provided with palladium bichloride
The predecessor bath 310 of the predecessor aqueous solution, and it is provided with the electroless plating bath of the nickeliferous electroless plating aqueous solution
320.In the present embodiment, the composition of the nickeliferous electroless plating aqueous solution includes nickel sulfate, hypophosphate class, carboxylic acid and resisted
Catalyst, the wherein concentration of nickel metal in aqueous are 8g/L, and carboxylic acid includes lactic acid and malic acid as chelating agent, to resist
Catalyst includes stanniferous compound.
Infrored equipment 40 provides infrared ray and is irradiated.In the present embodiment, it is infrared used in infrored equipment 40
Line be wave-length coverage be 80~150 μm, energy range be 80~150meV it is heating far-infrared (Thermal infrared,
TIR)。
Illustrate the manufacturing process that circuit is directly formed on substrate below in conjunction with the 1st figure and the 2nd figure.First, substrate is worked as
It is sent into after cleaning device (not shown), cleaning device cleaning and wetting substrate.
When in the silane coupler solution that the substrate cleaned is soaked in coupling bath 10, silane coupler and substrate it
Between produce coupling reaction, make on substrate formed by silane molecule covalently bonded silylation layer.The silicon formed in the present embodiment
Alkane thickness degree is about
Formed on substrate after silylation layer, substrate is sent into patterning equipment 20.First, ultraviolet exposure equipment 210
The silylation layer that ultraviolet can be irradiated on substrate, such as positive photoresistance exposure pattern, by the silane key of the silylation layer of ultraviolet irradiation
Knot is decomposed to form free radical chain, formed free radical chain silane can easily, be selectively removed, and then leave and do not remove and shape
Into the silylation layer of pattern, as circuit pattern.In the present embodiment, substrate is to be placed horizontally at ultraviolet exposure equipment 210,
The ultraviolet light source (not shown) that two groups of independent controls are set respectively over and under of substrate, and by ultraviolet exposure
Light shield used in equipment 210, can be in the circuit pattern that two dimension is formed on substrate.In another embodiment not illustrated, for
The three-dimensional circuit pattern being formed on MID substrates, further it can be set on the upright position relative to substrate level position
3rd group of ultraviolet light source.
After silylation layer on substrate forms circuit pattern, ozone source 220 provide wave-length coverage 184.9nm~
253.7nm ultraviolet, lure that oxygen forms ozone into, then ozone decomposed is into the active oxygen with free radical, further with shape
Silane layer surface into circuit pattern is reacted, and the silane on surface is rapidly hydrolyzed into the silanol with hydroxyl, thus in silane
The surface of layer forms silane alcohol layer, then by substrate by shower bath (not shown), with deionized water cleaning base plate table
Face.
Silane alcohol layer is formed on silylation layer and then substrate is sent into metal deposit equipment 30.First, substrate is soaked
Covalently bonded is formed in the hydroxyl on predecessor bath 310, silanol and palladium bichloride, silane alcohol layer and palladium are formed on silylation layer
The precursor layer formed, using the catalyst as electroless plating, then by substrate by shower bath (not shown), with
Deionized water cleaning base plate surface.The precursor layer thickness formed in the present embodiment is about
Formed on silylation layer after precursor layer, substrate is soaked in electroless plating bath 320, through urging for predecessor
Change, the circuit layer being made up of palladium-nickel metal of nm crystallization is formed on the surface of silane alcohol layer, substrate is then passed through into shower
Device (not shown), with deionized water cleaning base plate, circuit is directly formed on substrate to realize.In the present embodiment,
Palladium-nickel crystal size formed in circuit layer is 0.9 μm, and the ratio of composition is palladium：Nickel=5：95 weight %, thickness are aboutElectrical conductivity is up to 59.0x106S/m；And good depositional environment is provided through chelating agent and anticatalyst, therefore
It can ensure that circuit layer will not produce tubercle or indenture during being formed.
Further, after directly forming circuit on substrate, substrate is sent into infrored equipment 40, the base to forming circuit
Plate irradiates irradiation at short distance infrared ray.After precursor layer absorbs far infrared, unreacted hydroxyl and palladium metal are anti-in silanol
Should, covalently bonded is formed after sloughing a hydrone, can be further assured that the adhesion between circuit layer and silylation layer.Further
For, because the infrored equipment 40 of the present embodiment can use heating far-infrared, its thickness penetrated is 5 μm of scope, can be made
Precursor layer effectively absorbs heating far-infrared energy production further covalently bonded, it can be ensured that between circuit layer and silylation layer
Adhesion, therefore the stripping Bonding strength (an angle of 90 degrees) of the circuit of the present embodiment can be more than 1kg/cm, and elongation strengths can be more than
1kg/mm2。
In another embodiment of the present invention, can be by nickeliferous electroless plating solution replacement in electroless plating bath 320
Into the electroless plating solution of cupric, and layer of metal copper is deposited in precursor layer, as circuit layer.
The circuit of the substrate of each embodiment of the invention described above directly forms system, and its feature is to be provided with silane coupler
The coupling bath of solution, substrate is soaked in coupling bath, substrate is produced covalently with silane coupler through chemical reaction
Key is bonded, and forms silylation layer；And the patterning equipment comprising ultraviolet exposure equipment and ozone source, ultraviolet equipment pass through
Light shield made by CAD-CAM makes silylation layer be irradiated by ultraviolet, and further patterning forms circuit pattern.Compared to laser electricity
Road forms system, can also avoid laser processing procedure because of thermal source and to electricity while more accurate circuit pattern and spacing is provided
The shortcomings of road pattern causes to bubble or is stained.
The circuit of the substrate of the present invention directly forms another feature of system and is to utilize positive photoresistance exposure pattern, patterning
Silylation layer forms a part for circuit structure, can reduce the usage amount of photoresist；Through silanol and the covalent bond of palladium predecessor
Knot forms precursor layer, and electroless plating deposition is carried out in precursor layer, can also reduce palladium predecessor and plating metal
Usage amount, therefore the expensive material needed for above-mentioned patterning can be greatly decreased in economic benefit.
As described above is only to explain presently preferred embodiments of the present invention, is not intended to according to this be the present invention any shape
Limitation in formula, therefore it is all have make any modification or change for the present invention under identical spirit, should all wrap
Include the invention is intended to the category of protection.
Claims (10)
1. a kind of circuit of substrate directly forms system, it is characterised in that sequentially includes：
One coupling bath, is provided with silane coupler, when substrate is soaked in the coupling bath, to make to be formed on the substrate
The silylation layer being bonded by silane molecule；
One patterning equipment, optionally to pattern the silylation layer, the silylation layer is set to form a circuit pattern, and make the electricity
React to form a silane alcohol layer in the surface of road pattern；And
One metal deposit equipment, to allow the silane alcohol layer and a predecessor to be bonded to form a precursor layer, and in the predecessor
The enterprising row metal deposition of layer, so that the precursor layer surface directly forms a circuit layer.
2. the circuit of substrate according to claim 1 directly forms system, it is characterised in that the substrate is by polymerizable mesogenic
Thing, polyphthalamide, makrolon, polyimides, acrylonitrile-butadiene-styrene copolymer, without cover copper glass and
The material of one of epoxy resin is formed.
3. the circuit of substrate according to claim 1 directly forms system, it is characterised in that the silane coupler includes first
Silane.
4. the circuit of substrate according to claim 3 directly forms system, it is characterised in that the silane coupler further includes
At least one of both vinyl silanes and amino silane.
5. the circuit of substrate according to claim 1 directly forms system, it is characterised in that the patterning equipment includes one
Ultraviolet exposure equipment, there is provided a ultraviolet, to irradiate the silylation layer, to remove the portion that the silylation layer is irradiated by the ultraviolet
Point, the silylation layer for making not remove part is as the circuit pattern.
6. the circuit of substrate according to claim 1 directly forms system, it is characterised in that the patterning equipment includes one
Ozone source, there is provided the surface of ozone and the circuit pattern is reacted, and makes the surface of the circuit pattern form the silane alcohol layer.
7. the circuit of substrate according to claim 1 directly forms system, it is characterised in that the metal deposit equipment includes
One predecessor bath, the solution of the predecessor is provided with, predecessor bath is soaked in the substrate formed with the silane alcohol layer
When in groove, the silane alcohol layer is set to be bonded to form the precursor layer with the predecessor, wherein the predecessor is urging comprising palladium bichloride
Agent.
8. the circuit of substrate according to claim 1 directly forms system, it is characterised in that the metal deposit equipment includes
One electroless plating bath, a nickeliferous electroless plating solution is provided with, the change is soaked in the substrate for forming the precursor layer
When learning in electroplating bath, the precursor layer surface is set to form the circuit layer, wherein the circuit layer contains palladium-nickel nm crystallization, should
Electroless plating solution includes nickel sulfate, hypophosphate, carboxylic acid and the anticatalyst containing tin composite.
9. the circuit of substrate according to claim 8 directly forms system, it is characterised in that the nickel of the electroless plating solution
Metal concentration is 8g/L, and the carboxylic acid includes one kind at least within of lactic acid and malic acid.
10. the circuit of substrate according to claim 1 directly forms system, it is characterised in that further includes an infrared ray and sets
It is standby, there is provided an infrared ray, to irradiate the substrate to form the circuit layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610645638.XA CN107708320A (en) | 2016-08-08 | 2016-08-08 | The circuit of substrate directly forms system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610645638.XA CN107708320A (en) | 2016-08-08 | 2016-08-08 | The circuit of substrate directly forms system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107708320A true CN107708320A (en) | 2018-02-16 |
Family
ID=61169268
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610645638.XA Pending CN107708320A (en) | 2016-08-08 | 2016-08-08 | The circuit of substrate directly forms system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107708320A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06202343A (en) * | 1992-09-09 | 1994-07-22 | Philips Electron Nv | Method for chemical denaturation of surface according to pattern |
| TW280837B (en) * | 1992-06-29 | 1996-07-11 | Philips Electronics Nv | |
| CN101038436A (en) * | 2006-03-14 | 2007-09-19 | 佳能株式会社 | Photosensitive silane coupling agent, method of forming pattern, and method of fabricating device |
-
2016
- 2016-08-08 CN CN201610645638.XA patent/CN107708320A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW280837B (en) * | 1992-06-29 | 1996-07-11 | Philips Electronics Nv | |
| JPH06202343A (en) * | 1992-09-09 | 1994-07-22 | Philips Electron Nv | Method for chemical denaturation of surface according to pattern |
| CN101038436A (en) * | 2006-03-14 | 2007-09-19 | 佳能株式会社 | Photosensitive silane coupling agent, method of forming pattern, and method of fabricating device |
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Application publication date: 20180216 |
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