TWI547584B - Vapor deposition treatment equipment and evaporation treatment method - Google Patents

Description

Evaporation processing equipment and evaporation treatment method

An evaporation treatment device and an evaporation treatment method, in particular, an evaporation treatment device and an evaporation treatment method which can maintain a vacuum state and prevent external pollution.

Please refer to the vapor deposition apparatus of the application of the new patent publication No. M268354, which is only described as the main structure. Referring to the first drawing, a schematic side view of a vapor deposition apparatus of the prior art, the vapor deposition apparatus of the prior art includes a vacuum system 30a which is connected by a first vacuum chamber 31a and a second vacuum chamber. 32a and a switch 33a for controlling whether the first vacuum chamber 31a is in communication with the second vacuum chamber 32a; the second vacuum chamber 32a is provided with the heating device 50a and above the heating device 50a. a support table 35a for being mounted by the vapor deposition material A; a feeding device 40a disposed in the first vacuum chamber 31a, the feeding device 40a having a storage container 42a for accommodating the vapor deposition source B and a guide The material guiding mechanism 46a, when the first vacuum chamber 31a communicates with the second vacuum chamber 32a, can deliver the vapor deposition source B to the second vacuum chamber 32a: at least one is disposed in the second vacuum chamber In the heating device 50a of 32a, the heating device 50a is adapted to receive the vapor deposition source B from the feeding device 40a and heat it to vaporize the vapor deposition source B.

The prior art utilizes a predetermined amount of vapor deposition source B in the feeding device 40a to provide a sufficient amount of material for each evaporation operation, in order to avoid material being prolonged due to excessive supply. Deterioration occurs under idle, and the vacuuming operation is completed by first closing the switch 33a to block the first vacuum chamber 31a from communicating with the second vacuum chamber 32a, and then opening the shutter 34a.

However, the vapor deposition apparatus has a disadvantage in that it is necessary to restore the inside of the second vacuum chamber 32a to a normal pressure state every time the vapor-deposited material A is replaced, and to perform vacuuming after the new vapor-deposited material A is filled. Work, but the second vacuum chamber 32a has a larger demand for the vapor deposition operation. The volume, which causes the pumping operation to take longer, leads to a decrease in productivity. Further, each time the second vacuum chamber 32a feeds a new vapor deposition source B, the cavity must undergo an action of opening, closing, and evacuating, and after repeating the above actions many times, the flaw affects the interior of the cavity. The degree of vacuum.

The main object of the present invention is to provide an evaporation processing apparatus having a mechanism for continuously processing a plating pot and automatically replacing a plurality of vapor deposition sources, thereby increasing productivity.

Another object of the present invention is to provide an evaporation processing apparatus that does not need to release the vacuum state of the process chamber to maintain the vacuum inside the process chamber and to prevent contamination from the outside.

In order to achieve the above object, the specific technical means of the present invention includes a first temporary storage chamber, which can receive a plating pot from the outside, the first temporary storage chamber can be in a vacuum state; and a first gate can be back and forth Moving; a processing chamber, the first gate is disposed between the first temporary storage chamber, and the interior of the processing chamber is kept in a vacuum state; a second gate is movable back and forth; and a second temporary storage a second gate is disposed between the chamber and the processing chamber; and a vacuum chamber is connected to the processing chamber, the vacuum chamber has a rotatable carrier, the carrier has a plurality of An evaporation source, an evaporation source is sent into the process chamber through a lifting device.

Another object of the present invention is to provide an evaporation processing method, which comprises loading a plating pot into a first temporary storage chamber, and a first between the first temporary storage chamber and a processing chamber a gate, a second gate is disposed between the process chamber and a second temporary storage chamber, wherein the process chamber is kept in a vacuum state; the first temporary storage chamber is in a vacuum state; and the first gate is opened, The first temporary storage chamber is connected to the processing chamber; the plating pot is transferred to the processing chamber; the processing chamber performs a processing process on the substrate; and the second temporary storage chamber is pre-empted into a vacuum a state; opening the second gate; transferring the processed plating pot to the second temporary storage chamber; and closing the second gate and transferring the plating pot.

Therefore, the process chamber can be processed without any need to release the vacuum state, and the processed plated pot can be immediately sent out to receive the plated pot to be processed. Since the process chamber does not need to be relieved of the vacuum state, The process chamber can be processed at any time, which can increase the productivity, and the process chamber is also effectively isolated from the outside, which can block external pollution and improve the yield of the plated component.

1‧‧‧First temporary storage chamber

2‧‧‧The first gate

3‧‧‧Processing chamber

4‧‧‧second gate

5‧‧‧Second temporary storage chamber

7‧‧‧vacuum chamber

8‧‧‧ third gate

9‧‧‧ lifting device

10‧‧‧ plating pot

101‧‧‧Ironed components

20‧‧‧First drive

30‧‧‧Second drive

71‧‧‧ Carrying tray

711‧‧‧ socket

73‧‧‧vapor deposition source

91‧‧‧ Gears

93‧‧‧linear screw

95‧‧‧ Lifting platform

100‧‧‧Motor

200‧‧‧Rotating device

30a‧‧‧vacuum system

31a‧‧‧First vacuum chamber

32a‧‧‧Second vacuum chamber

33a‧‧‧Switch

34a‧‧‧Valves

50a‧‧‧heating device

35a‧‧‧Support Desk

40a‧‧‧feeding device

42a‧‧‧ storage container

46a‧‧‧Guide mechanism

A‧‧‧ evaporation

B‧‧·vapor deposition source

S10~S90, S100~S60‧‧‧ steps

The first figure is a side view of a vapor deposition apparatus of the prior art.

The second figure is a schematic side view of the vapor deposition processing apparatus of the present invention.

The third figure is a top view of the carrier tray of the vapor deposition processing apparatus of the present invention.

The fourth figure is a schematic flow chart of the vapor deposition processing method of the present invention.

The fifth figure is a schematic diagram of the opening of the first gate of the present invention.

Figure 6 is a schematic view of the present invention for transferring a plating pot to a process chamber.

The seventh figure is a schematic diagram of the process of the process chamber of the present invention.

The eighth figure is a schematic diagram of the opening of the first gate of the present invention.

The ninth figure is a schematic view of the present invention for transferring a plating pot to a second temporary storage chamber.

The tenth figure is a schematic view of the invention for closing the second gate and conveying the plating pot.

Figure 11 is a schematic view showing another flow of the vapor deposition treatment method of the present invention.

Fig. 12 is a schematic view showing the provision of a vacuum chamber with a carrier tray according to the present invention.

Figure 13 is a schematic view of the present invention for placing an evaporation source on a carrier tray.

Figure 14 is a schematic view of the present invention for delivering a vapor deposition source to a process chamber.

The embodiments of the present invention will be described in more detail below with reference to the drawings and the <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt;

Referring to the second figure, a schematic side view of the vapor deposition processing apparatus of the present invention. The invention relates to a vapor deposition processing apparatus, which comprises at least a first temporary storage chamber 1, a processing chamber 3, a second temporary storage chamber 5 and a vacuum chamber 7.

The first temporary storage chamber 1 can receive a plating pot 10 from the outside. When the first temporary storage chamber 1 receives a plating pot 10 from the outside, the first temporary storage chamber 1 is evacuated, so that the first temporary storage chamber 1 is evacuated. The inside of the first temporary storage chamber 1 is in a closed vacuum state, and the external environment may be a substrate transfer device or other suitable substrate transfer device, such as a substrate transfer device such as a robot coin, wherein the plating pot 10 is provided with one or A plurality of plated elements 101 are plated.

The at least one plated component 101 may be at least one of a substrate for manufacturing a semiconductor, a substrate for manufacturing a light emitting diode, a wafer for manufacturing a solar cell, and a substrate for manufacturing a display panel. one.

A first gate 2 is disposed between the first temporary storage chamber 1 and the processing chamber 3, and the first gate 2 is movable up and down. The interior of the processing chamber 3 is kept in a vacuum state and can be received from the first The plating pot 10 is transferred from the temporary storage chamber 1 , wherein the first temporary storage chamber 1 and the processing chamber 3 are separated from each other or connected to each other through a switch for controlling the first gate 2, wherein The first gate 2 can be coupled to a first driving device 20, and the first driving device 20 can control the opening or closing of the first gate 2. The process chamber 3 can be an evaporation chamber.

The processing chamber 3 is further provided with a rotating device 200. When the plating pot 10 reaches the positioning in the processing chamber 3, the rotating device 200 is first coupled with the plating pot 10, and then the plating pot 10 is rotated. Wherein the rotating device 200 can be a motor.

The second gate 4 is disposed between the second temporary storage chamber 5 and the processing chamber 3, and the second gate 4 can be moved up and down, wherein by controlling the switch of the second gate 4, the The second temporary storage chamber 5 and the processing chamber 3 are separated from each other or connected to each other. The second gate 4 can be coupled to a second driving device 30. The second driving device 20 can control the second gate 4. Open or close.

The vacuum chamber 7 is connected to the processing chamber 3, and a third gate 8 can be disposed between the vacuum chamber 7 and the processing chamber 3, and the third gate 8 can be coupled to a third driving device ( The figure is not shown), and the opening or closing of the third gate 8 can be controlled by the third driving device.

Referring to the third figure, a top view of the carrier tray of the vapor deposition processing apparatus of the present invention, and as shown in the second figure, the vacuum chamber 7 has a rotatable carrier 71 having a plurality of receiving trays 71 The port 711 can receive an evaporation source 73, wherein the center of the carrier 71 is coupled to a motor 100. The motor 100 can drive the carrier 71 to rotate. The lifting device 9 is fed into the processing chamber 3.

The lifting device 9 includes a power unit (not shown), a gear 91, a linear screw 93, and a lifting platform 95. The power unit is coupled to the gear 91, and the gear 91 is engaged with the linear screw 93. The lifting platform 95 can be mounted on the linear screw 93. By rotating the carrier 71, any evaporation source 73 can be directly arranged on the lifting platform 95, so that the lifting platform 95 can be Entering the receiving interface 711 to drive the lifting platform 95 and the upper The vapor deposition source 73 is raised and lowered. Wherein the power unit can be a motor.

In one embodiment of the invention, the transfer of the plating pot 10 can be accomplished by means of a transfer roller, transport track or other suitable means of transport.

Referring to the fourth figure, a schematic flow chart of the vapor deposition processing method of the present invention is combined with the first to third figures. As shown in step S10 of the fourth figure, the plating pot 10 is loaded into the first temporary storage chamber. 1 , as shown in the second figure, a first gate 2 is disposed between the first temporary storage chamber 1 and a processing chamber 3, and between the processing chamber 3 and a second temporary storage chamber 5 A second gate 4 is provided, wherein the process chamber 3 is constantly maintained in a vacuum state. The plating pot 10 is provided with one or a plurality of plated elements 101.

Then, as shown in step S20 of the fourth figure, the first temporary storage chamber 1 is brought into a vacuum state, wherein the first temporary storage chamber 1 must be kept in a closed state before the first temporary storage chamber 1 is in a vacuum state. . In step S30 of the fourth figure, the first gate 2 is opened to connect the first temporary storage chamber 1 with the processing chamber 3, as shown in the fifth figure. Preferably, the vacuum state of the first temporary storage chamber 1 can be set to coincide with the vacuum state of the processing chamber 3.

Going to step S40 of the fourth figure, the plating pot 10 is transferred to the processing chamber 3, as shown in the sixth figure, and proceeds to step S50 of the fourth drawing, the processing chamber 3 is on the plating pot 10. The plating element 101 performs a processing process, wherein when the plating pot 10 is transferred into the processing chamber 3, the first gate 2 can be restored to a closed state, so that the first temporary storage chamber 1 can receive the next pending The plating pot 10 is as shown in the seventh figure.

Then, proceeding to step S60 of the fourth figure, the second temporary storage chamber 5 is pre-empted into a vacuum state. Preferably, the vacuum state of the second temporary storage chamber 5 is set to be the same as the processing chamber 3 The vacuum state 5 is the same. Proceeding to step S70 of the fourth figure, the second gate 4 is opened, as shown in the eighth figure.

Step S80 of the fourth figure is performed, and the plating pot 10 that has been processed by the process is transferred to the second temporary storage chamber 5, as shown in the ninth figure. Finally, proceeding to step S80 of the fourth figure, the second gate 4 is closed and the plating pot 10 is conveyed as shown in the tenth figure.

As described above, when the plating pot 10 is transferred into the process chamber 3, the first gate 2 can be restored to a closed state, and then the processing chamber 3 is processed by the plated member 101 of the plating pot 10. Processing, during the processing of the process chamber 3, since the first gate 2 is off Therefore, the first temporary storage chamber 1 can receive the plating pot 10 to be processed from the outside, and does not affect the vacuum state of the processing chamber 3. It is worth mentioning that the first temporary storage chamber 1 The volume is much smaller than the process chamber 3, and even when the vacuum state is released, the vacuum state can be quickly reached, and in fact, it takes time not to exceed the processing time of the process, so when the process of the process chamber 3 is performed Once the processing is completed, the plating pot 10 to be processed can be transferred to the processing chamber 3 immediately.

The processing chamber 3 is further provided with a rotating device 200. When the plating pot 10 reaches the positioning in the processing chamber 3, the rotating device 200 is first coupled with the plating pot 10, and then the plating pot 10 is rotated. .

In addition, the second temporary storage chamber 5 can be in a vacuum state in advance, so that when the processing of the processing chamber 3 is completed, the plating pot 10 of the processing chamber 3 can be received immediately, as long as the second gate 4 is When closed, the process chamber 3 can be processed again for the next plating pot 10, and the second temporary storage chamber 5 can also transport the processed plating pot 10.

It can be seen that the interior of the processing chamber 3 can be kept in a vacuum state, and the processing chamber 3 is located between the first temporary storage chamber 1 and the second temporary storage chamber 5, and the first gate is added. 2 and the isolation of the second gate 4, so that the process chamber 3 can be completely isolated from the outside, so that the process chamber 3 can be completely protected from external pollution, and the internal vacuum of the process chamber 3 can be effectively maintained, so that the process can be improved. The yield of the component to be plated is worth mentioning. Since the process chamber 3 is always kept in a vacuum state, the process chamber 3 can be processed at any time, and the productivity can be improved.

Referring to the eleventh drawing, another schematic flow chart of the vapor deposition processing method of the present invention is shown. As shown in step S100 of FIG. 11 , a vacuum chamber 7 is provided. The vacuum chamber 7 is connected to a processing chamber 3, and at least one of the vacuum chamber 7 and the processing chamber 3 is disposed. The three gates 8 have a rotatable carrier 71 inside, and the carrier 71 has a plurality of receiving interfaces 711 as shown in FIG. Wherein, the vacuum chamber is kept in a vacuum state.

Next, proceeding to step S200 of FIG. 11 , a plurality of vapor deposition sources 73 are respectively placed in the receiving interfaces 711 as shown in FIG. Proceeding to step S300 of Fig. 11, any of the vapor deposition sources 73 are fed into the process chamber 3 by at least one lifting device 9, as shown in Fig. 14.

Then, proceeding to step S400 of the eleventh diagram, the evaporation source 73 is processed. Processing, after the evaporation source 73 is processed by the process, the at least one lifting device 9 moves the processed evaporation source 73 back to the bearing interface 731 that originally carries the evaporation source 73, please refer to the thirteenth Figure.

Next, proceeding to step S500 of FIG. 11 to rotate the carrier tray 71 so that any other vapor deposition source 73 available for processing corresponds to the position of the elevator table 95. Finally, proceeding to step S600 of FIG. 11 , the at least one elevating device 73 for supplying the process is fed into the process chamber 3 by using the at least one lifting device, and repeating the steps of steps S300 to S600. Until all the evaporation source 73 has been processed by the process.

As described above, in addition to placing the vapor deposition sources 73 in the sockets 711, the at least one third gate 8 must be closed, and the at least one third gate 8 can be kept open during the rest. . When the at least one third gate 8 is closed, the processing chamber 3 is isolated from the vacuum chamber 7, so that the processed evaporation source can be processed without affecting the vacuum condition of the processing chamber 3. 73 is taken out from the vacuum chamber 7, and the new vapor deposition source 7 is again placed in the bearing port 711. Since a certain number of vapor deposition sources 7 can be filled at one time, and the vapor deposition source can be automatically replaced. The mechanism of 7 can thus lengthen the interval of re-feeding each time, and does not need to break the vacuum chamber 7 frequently, so as to reduce the probability of affecting the vacuum inside the vacuum chamber and reducing the pollution.

The above is only a preferred embodiment for explaining the present invention, and is not intended to limit the present invention in any way, and any modifications or alterations to the present invention made in the spirit of the same invention. All should still be included in the scope of the intention of the present invention.

1‧‧‧First temporary storage chamber

2‧‧‧The first gate

3‧‧‧Processing chamber

4‧‧‧second gate

5‧‧‧Second temporary storage chamber

7‧‧‧vacuum chamber

8‧‧‧ third gate

9‧‧‧ lifting device

10‧‧‧ plating pot

20‧‧‧First drive

30‧‧‧Second drive

71‧‧‧ Carrying tray

73‧‧‧vapor deposition source

91‧‧‧ Gears

93‧‧‧linear screw

95‧‧‧ Lifting platform

100‧‧‧Motor

101‧‧‧Ironed components

200‧‧‧Rotating device

Claims (12)

An evaporation processing device comprising: a first temporary storage chamber, wherein a plating pot can be received from the outside, the first temporary storage chamber can be in a vacuum state; and a first gate can be moved back and forth; The processing chamber is configured to receive the plating pot from the first temporary storage chamber, the first gate is disposed between the processing chamber and the first temporary storage chamber, and the interior of the processing chamber is always maintained a vacuum state; a second gate movable back and forth; a second temporary storage chamber receiving the plating pot from the processing chamber, the second temporary storage chamber and the processing chamber Between the second gate; and a vacuum chamber connected to the processing chamber, the vacuum chamber has a rotatable carrier, the carrier has a plurality of evaporation sources, and an evaporation source passes through The lifting device is fed into the processing chamber. An evaporation processing apparatus according to claim 1, wherein the plating pot is provided with at least one plated member, and the at least one plated member may be a substrate for manufacturing a semiconductor, and one for manufacturing a light emitting device. At least one of a substrate of a polar body, a wafer for manufacturing a solar cell, and a substrate for manufacturing a display panel. An evaporation processing apparatus according to claim 1, wherein the processing chamber may be an evaporation chamber. The vapor deposition processing apparatus of claim 1, wherein the first gate is connectable with a first driving device, and the first driving device is controlled to control the switch of the first gate, the second gate is Connected to a second driving device, through the second driving device to control the switch of the third gate, the third gate is connectable with a third driving device, and the third driving device is controlled to control the switch of the third gate The first driving device, the second driving device and the third driving device may be at least one of a pneumatic cylinder and a hydraulic cylinder. The vapor deposition processing apparatus of claim 1, wherein the carrier tray has a plurality of sockets, the sockets respectively receiving the evaporation source, the lifting device comprising a power device and a gear a linear screw and a lifting platform, the power device is coupled to the gear, the gear is engaged with the linear screw, and the lifting platform can be mounted on the linear screw, wherein the rotating tray is used to rotate An evaporation source corresponds to the lifting platform, and the power device can be a motor. An evaporation processing apparatus according to claim 1, wherein the processing chamber further comprises a rotating device, the rotating device can drive the plating pot to rotate, and the rotating device can be a motor. An evaporation processing method includes: loading a plating pot into a first temporary storage chamber, and providing a first gate between the first temporary storage chamber and a processing chamber, the processing chamber and the processing chamber a second gate is disposed between a second temporary storage chamber, wherein the processing chamber is kept in a vacuum state; the first temporary storage chamber is in a vacuum state; and the first temporary gate is opened to make the first temporary storage chamber The chamber is in communication with the processing chamber; the plating pot is transferred to the processing chamber; the processing chamber performs a processing process on the substrate; the second temporary storage chamber is pre-empted into a vacuum state; and the second gate is opened Transferring the plated pot that has been processed to the second temporary storage chamber; and closing the second gate and transferring the plating pot. According to the vapor deposition processing method of claim 7, wherein the vacuum state of the first temporary storage chamber is set to be consistent with the vacuum state of the processing chamber, and the vacuum state of the second temporary storage chamber is set. It is in accordance with the vacuum state of the process chamber. According to the vapor deposition processing method of claim 7, wherein the plating pot is transferred to the processing chamber, the first gate is closed, and the first temporary storage chamber continues to receive the next piece to be processed. Plated pot. The vapor deposition processing method of claim 7, further comprising: providing a vacuum chamber, the vacuum chamber being connected to a processing chamber, the vacuum chamber being disposed between the processing chamber and the processing chamber There is at least one third gate, the inside of the vacuum chamber has a rotatable carrier, the carrier has a plurality of sockets; a plurality of evaporation sources are respectively placed in the sockets; a vapor deposition source is used Feeding in the direction of the processing chamber; after the evaporation source is processed, the evaporation source after the processing is returned to the original interface carrying the evaporation source; All other vapor deposition sources available for processing are corresponding to the position of the lifting platform; and any other vapor deposition source available for processing is fed into the processing chamber. The vapor deposition treatment method according to claim 10, wherein the vacuum chamber is constantly maintained in a vacuum state. The vapor deposition treatment method according to claim 10, wherein the at least one third gate is closed except that the vapor deposition sources are respectively placed in the bearing interfaces, and the at least one third is The gate can be kept open.