TWI543251B - System and method for an etch process with silicon concentration control - Google Patents

Description

Etching process method and system thereof with germanium concentration control

The present disclosure relates to an etching system, and more particularly to an etching process method and system therefor.

The size of the integrated circuit is gradually reduced with the advanced technology nodes. The size reduction of integrated circuits is a challenge of various types, including patterning and other manufacturing processes. For example, shallow trench isolation (STI) features are formed on the germanium substrate to define different active regions for various devices, such as field effect transistors (FETs). However, existing methods of forming STI features have many concerns. For example, the step height cannot be properly controlled to achieve the desired device performance. In addition, it is impossible to consistently control the height difference between the wafer and the wafer. In another example, various particles may be introduced onto the semiconductor substrate during the formation of the STI features.

Therefore, a method and system are needed to solve these problems.

One or more embodiments of the present disclosure are directed to an etching system having an etching system including a storage tank for containing an etching solution for etching; a germanium monitor configured to measure the radon concentration of the etching liquid; one and storage a drain module that combines and operatively drains the etchant; and a supply module that operatively fills the reservoir with a new etchant.

100‧‧‧ method

102~116‧‧‧ operation

200‧‧‧Semiconductor structure

210‧‧‧Semiconductor substrate

212‧‧‧Oxide layer

214‧‧‧layer of tantalum nitride

216‧‧‧ patterned photoresist layer

217‧‧‧ trench

218‧‧‧ dielectric materials

220‧‧‧Shallow trench insulation characteristics

300‧‧‧ etching system

302‧‧‧ Container

306‧‧‧Substrate

308‧‧‧Chemical supply agency

310‧‧‧Flow valve

312‧‧‧ Flowmeter

314‧‧‧Chemical excretion agency

316‧‧‧Flow valve

318‧‧‧ flowmeter

320‧‧‧Circular mechanism

322‧‧‧heater

324‧‧‧ valve

326‧‧‧Other components

328‧‧‧矽 monitor

330‧‧‧ Controller

400‧‧‧ method

402~410‧‧‧ operation

432‧‧‧矽Monitoring module

434‧‧‧Measurement unit

460‧‧‧ method

462‧‧‧ operations

The aspects of the present disclosure will be better understood from the following detailed description when read in the claims. It should be emphasized that the various features are not drawn to scale in accordance with standard practices of industry practice. In fact, the dimensions of the various features may be arbitrarily enlarged or reduced for clarity of discussion.

1 is a flow chart constructed in accordance with one embodiment, the flow chart of which is a method of fabricating a semiconductor structure.

Figures 2 through 8 are cross-sectional views constructed in accordance with one embodiment, the cross-sectional views of which are cross-sections of semiconductor structures fabricated by the method of Figure 1 at various stages of fabrication.

Figure 9 is a diagram constructed in accordance with one embodiment, the illustration of which is a characteristic data of a phosphorous acid etch.

Figure 10 is a schematic illustration of an embodiment of an etching system for performing the method of Figure 1 in accordance with one embodiment.

Figure 11 is a flow chart constructed in accordance with one or more embodiments, the flow chart of which is a method of application to the etching system of Figure 10.

Figure 12 is a schematic view of another embodiment, the schematic of which is an etching system that implements the method of Figure 1.

Figure 13 is a flow chart constructed in accordance with one or more embodiments, the flow chart of which is a method of application to an etchant used in the method of Figure 1.

It should be understood that the present invention provides many different embodiments, or examples. It is used to implement different features of various embodiments. The compositions and configurations in the specific embodiments are described below to simplify the present invention. These examples are not intended to limit the invention. In addition, repeated element symbols may be present in various examples of the present description in order to simplify the description, but this does not represent a particular connection between the various embodiments and/or the drawings. In addition, a first feature that is “above”, “above”, “below” or “above” may include the first feature in the embodiment being in direct contact with the second feature, or may also include There are other additional features between the first feature and the second feature that make the first feature in direct contact with the second feature.

1 is a flow chart constructed in accordance with one embodiment, the flow chart of which is a method 100 of fabricating a semiconductor structure. 2 through 8 are cross-sectional views constructed in accordance with one embodiment, the cross-sectional views of which are sections of semiconductor structure 200 fabricated by method 100 at various stages of fabrication. The method 100, semiconductor structure 200 and etching systems 300 and 430 are collectively described in Figures 1 through 8 and other figures.

Referring to FIG. 2, the semiconductor structure 200 includes a semiconductor substrate 210 of a semiconductor material. In this embodiment, the semiconductor material is germanium. In a further embodiment, the semiconductor substrate 210 is a germanium wafer. Additionally, the semiconductor substrate additionally or additionally includes another suitable semiconductor material, such as germanium, germanium, tantalum carbide, gallium arsenide, or other semiconductor materials of III-V compounds. In another embodiment, the semiconductor substrate 210 includes a layer of buried dielectric material for isolation by a suitable technique, such as by a technique known as Separation by IMplantation of Oxygen, SIMOX. In some embodiments, the substrate 210 can It is a semiconductor on insulator, such as a silicon on insulator (SOI). The semiconductor substrate 210 may also include various doping characteristics, such as N-wells and P-wells in respective active regions.

Referring to FIGS. 1 and 2, method 100 begins at operation 102 by forming a hard mask layer on substrate 210. In the present embodiment, the hard mask layer includes a tantalum nitride (SiN) layer 214. In a further embodiment, the hard mask layer further includes forming a hafnium oxide layer (also referred to as a pad oxide layer) 212 on the substrate 210. In this case, the tantalum nitride layer 214 is formed on the tantalum oxide layer 212. The yttrium oxide layer 212 is formed on the substrate 210 by a technique such as thermal oxidation. The tantalum nitride layer 214 is formed on the tantalum oxide layer 212 via a deposition technique such as chemical vapor deposition (CVD), physical vapor deposition (PVD), or other suitable technique.

With continued reference to FIGS. 1 and 2, method 100 proceeds to operation 104 to form a patterned photoresist layer 216 over the hard mask layers (212 and 214) through a lithography process. In one embodiment, the lithography process includes forming a photoresist layer by spin coating; exposing the photoresist layer, such as ultraviolet (UV), using exposure energy, and developing the exposed photoresist layer with a developer to form a patterned photoresist layer. In another example, the lithography process includes spin coating, soft baking, exposure, post-exposure baking, development, and hard baking. In other embodiments, the lithography process of forming the patterned photoresist layer 216 may additionally employ other techniques, such as e-beam lithography, maskless patterning, or molecular printing.

Referring to Figures 1 and 3, method 100 proceeds to operation 106 to The patterned photoresist layer 216 is an etch mask that etches the hard mask layers (212 and 214). The etch process is designed to selectively remove the hard mask layer from the openings of the patterned photoresist layer 216 to pattern the hard mask (patterned yttria layer 212 and patterned tantalum nitride layer 214). The patterned hard mask has openings that make the substrate 210 uncovered in the opening. In one embodiment, the etch process includes a wet etch process for selectively etching etchants of tantalum nitride and hafnium oxide. More specifically, the etching process includes two etching steps: a first etching of the tantalum nitride selectively etching with a phosphorous acid solution and a second etching of the germanium oxide etching with a hydrofluoric acid solution. Additionally, the etching process can include any suitable etching technique, such as dry etching, wet etching, or a combination thereof.

Referring to Figures 1 and 4, method 100 proceeds to operation 108 where the patterned photoresist layer 216 is removed by a suitable technique, such as wet stripping or plasma ashing. Additionally, the patterned photoresist layer 216 can be removed during subsequent fabrication stages.

Referring to FIGS. 1 and 5, the method 100 proceeds to operation 110 to etch the substrate 210 by patterning the hard mask as an etch mask. More specifically, the etching process is applied to the substrate 210 through the opening of the patterned hard mask. The etch process is designed to selectively etch the substrate 210. In the present embodiment, the etching process selectively etches germanium in the substrate 210 to form trenches 217 in the semiconductor substrate 210.

Referring to Figures 1 and 6, method 100 proceeds to operation 112 to fill one or more dielectric materials 218 into the trenches. In one embodiment, the dielectric material 218 comprises ruthenium oxide. In another embodiment, the dielectric material 218 The inner layer is formed by a thermal oxidation of the sidewalls of the trench and then by CVD deposition of cerium oxide, such as high density plasma CVD (HDPCVD). The annealing treatment can be performed after the trench is filled with the dielectric material or after filling.

Referring to FIGS. 1 and 7, the method 100 proceeds to operation 114 to chemically mechanically polish the substrate 210 to remove excess dielectric material 218 deposited on the hard mask and the surface of the planarized substrate 210. Chemical mechanical polishing stops on the tantalum nitride layer 214. In this case, the tantalum nitride layer 214 acts as a polishing stop layer in the chemical mechanical polishing process. The shallow trench isolation feature 220 is formed as shown in FIG.

Referring to Figures 1 and 8, method 100 proceeds to operation 116 where the tantalum nitride layer 214 is removed by wet etching through an etchant. In this embodiment, the etching solution includes phosphorous acid. More specifically, the etching solution includes phosphorous acid (H ₃ PO ₄ ) and water (H ₂ O). In particular, the etchant is tuned to a predefined germanium concentration via an etching system and method, which will be described in greater detail below with reference to Figures 10 and 11.

In one embodiment, the method includes measuring a cerium concentration of the etchant and adjusting the cerium concentration based on the measured cerium concentration. The etching system includes a helium monitor configured to measure the concentration of germanium in the etchant and a module for adjusting the concentration of germanium in the etchant.

In another embodiment, the method includes predicting a concentration of germanium in the etchant based on the manufacturing data and adjusting the concentration of germanium based on the predicted concentration of germanium. By predicting the concentration of germanium in the etchant, the step of measuring the concentration of germanium can be removed or the amount of measurement can be reduced. Predicting the concentration of germanium in the etchant is based on the manufacturing data model The amount of yttrium nitride etched is obtained. In one embodiment, the prediction is based on the last time the etchant was replaced, the etchant etches the number of wafers. In one embodiment, the prediction is based on the number of wafers and further based on the consumption of tantalum nitride, such as the patterned area of the tantalum nitride layer multiplied by the etch thickness. The amount of enthalpy added to the etchant can be determined. Therefore, the erbium concentration of the etchant can be calculated.

In another embodiment, the method includes measuring and predicting a combination of erbium concentrations in the etchant. For example, after a plurality of wafers are etched using an etchant, the germanium concentration is measured and relatively adjusted. Between measurements, the erbium concentration is predicted based on manufacturing data and adjusted relatively.

In this embodiment, the etching solution can be heated to a high temperature to obtain an optimized etching effect. In one embodiment, the temperature of the etchant ranges from room temperature to about 200 °C. In another example, the etchant has a phosphite volume concentration greater than 0% and less than 99%. After operation 116, the tantalum nitride layer 214 is removed and the step height T is maintained for subsequent processing to form other circuit features. The step height T is defined as the vertical difference between the upper surface of the shallow trench insulating feature 220 and the upper surface of the yttrium oxide layer 212.

An etchant having phosphorous acid can effectively etch tantalum nitride but may also etch yttrium oxide. One experiment was to remove a portion of the pad oxide layer during the etching process as shown in FIG. As shown in Fig. 9, the horizontal axis represents the number of etching liquid etched wafers, and the vertical axis represents the remaining pad oxide thickness. Experiments have shown that the remaining thickness of the pad oxide layer is related to the number of wafers etched by the etchant or to the lifetime of the phosphorous acid. In other words, the new phosphorous acid has a higher cerium oxide etch rate. Etching rate can be known through experiments and further analysis It is related to the concentration of cerium in the etching solution. The neon concentration of the new etchant is substantially close to zero. During the life of the etchant, more wafers need to be etched and more enthalpy is dissolved in the etchant. Therefore, the etching rate of cerium oxide is lowered. Therefore, during the life of the etchant, the etch rate of yttrium oxide is changing and the height of the step of the shallow trench isolation feature of each wafer changes, resulting in unstable operating conditions and component structures of each wafer. According to the above analysis and discovery, the erbium concentration of the etchant is dynamically adjusted to a predefined range or a range of pre-defined etch results consistent and uniform shallow trench isolation characteristics of each wafer.

Although method 100 has been described in detail in accordance with many embodiments, other operations may be performed before, during, and/or after operation of method 100. In one embodiment, after forming the shallow trench isolation features, each active region is defined. Various components are formed in the active region, such as field effect transistors (FETs).

In another embodiment, fin field effect transistors (FinFETs) are further formed in the fin active region. After forming the shallow trench isolation features, the substrate 210 is etched to selectively etch the dielectric material 218 to recess to form shallow trench isolation features. In a further embodiment, the etch process is designed to selectively etch a shallow trench isolation feature dielectric material (eg, yttrium oxide) and leave a semiconductor material (eg, germanium) of substrate 210.

The etching system for method 100 and the method of maintaining the etching liquid will be described in more detail later. FIG. 10 is a schematic diagram of one or more embodiments, the schematic of which is an etching system 300. The etching system 300 includes a container (storage tank) 302 designed to accommodate an etchant for etching. In this embodiment, the etching solution is phosphorous acid. More specifically, the The etching solution includes phosphorous acid and water.

By way of example, a substrate 306, such as a semiconductor wafer, is etched by an etchant in the container 302. Substrate 306 includes a layer of tantalum nitride that will be etched by the etchant in container 302. In one embodiment, substrate 306 is a semiconductor structure 200.

The etching system 300 includes a chemical supply mechanism 308 in combination with the container 302 and is configured to supply a new etchant to the container 302. In one embodiment, a flow valve 310 and a flow meter 312 are combined with a chemical supply mechanism 308 to separately control and monitor the corresponding chemical flow.

The etching system 300 includes a chemical drain mechanism 314 in combination with the container 302 and is configured to drain etchant from the container 302. In one embodiment, a flow valve 316 and a flow meter 318 are combined with a chemical drain 314 to separately control and monitor the corresponding chemical flow.

In one embodiment, the etching system 300 includes a circulation mechanism 320 in combination with the container 302 and is designed to circulate etchant for various functions, such as heating and filtration. In one embodiment, a heater 322 is combined with the circulation mechanism 320 to heat the etchant to maintain the temperature of the etchant to a specific temperature for an optimized etch. In another example, a valve 324 is combined with the circulation mechanism 320 to control the flow of etchant. In other embodiments, other elements 326, such as filters and pumps, are combined with the circulation mechanism 320 to separately filter particles in the etchant and circulate the etchant.

Etch system 300 also includes a helium monitor 328 configured to monitor the radon concentration of the etchant. In one embodiment, the helium monitor 328 An inductively coupled plasma atomic emission spectrometer (ICP-AES) is included to measure the concentration of germanium in the etchant.

The etching system 300 also includes a controller 330 in combination with the helium monitor 328 that is configured to determine the volume that the etchant needs to replace based on the helium concentration obtained from the helium monitor. The controller 330 includes hardware, software, and data storage to determine the volume based on the measured radon concentration and a predetermined radon concentration range or a predetermined radon concentration value.

In one embodiment, the controller is further coupled to the drainage mechanism 314 and is configured to activate the drainage mechanism 314 to drain a determined volume of etchant from the container. In another embodiment, the controller is further coupled to the supply mechanism 308 and is configured to activate the supply module to fill the volume of new etchant determined by the container 302.

The etching system 300 can further include a chamber 332 such that the container 302 is received therein and various etching processes occur within the chamber 332. Etching system 300 can include a combination of other features, modules, and components that have been etched and operative to maintain the erbium concentration of the etchant.

Figure 11 is a flow diagram of a method 400 for performing etching and maintaining the germanium concentration of an etchant. In the present embodiment, method 400 is implemented in etching system 300. Method 400 can refer to Figures 10 and 11. The method 400 begins at operation 402 by etching using an etchant in the vessel 302. One or more wafers may be etched using this etchant.

The method 400 includes an operation 404 of measuring the erbium concentration of the etchant by using a helium monitor 328. In this embodiment, the germanium concentration is passed through ICP-AES. The method is determined as a helium monitor 328.

The method 400 includes an operation 406 to determine a volume that the etchant and the new etchant need to be replaced to maintain the erbium concentration within a predetermined range (or value). In one embodiment, the volume ΔV is determined by the general formula (V-ΔV)*C=V*C ₀ . The parameter V is the total volume of the etchant before it is drained, C is the measured enthalpy concentration, and C ₀ is the predetermined erbium concentration.

Through various experimental analyses, it can be found that if the germanium concentration is high (as described above), the etch rate of cerium oxide will have a high rate. In addition, if the erbium concentration of the etchant is too high, for example, near or above saturation enthalpy, ruthenium will precipitate in the etchant, thereby introducing particles into the etched wafer. Therefore, the predetermined erbium concentration C ₀ is selected based on these two factors such that it is sufficiently high to have no significant etch of yttrium oxide and sufficiently low (below the 矽 saturation point) so that no particle concerns are required.

The method 400 includes an operation 408 of draining the etchant of the determined volume ΔV from the container 302.

The method 400 further includes an operation 410 of refilling the determined ΔV volume of the new etchant to the vessel 302 such that the enthalpy concentration remains at the predetermined value C ₀ .

The method 400 may repeat operations 402-410 to perform etching processing of a plurality of wafers while maintaining the germanium concentration of the etching liquid at a predetermined value or within a predetermined range.

There are a variety of different advantages in different embodiments of the present disclosure. In one embodiment, the etch rate deviation of yttrium oxide is reduced. Therefore, the step height deviation of the STI is reduced. Therefore, the active regions of each wafer thus formed are identical. This improves the component performance of the formed components, particularly the small feature size components of advanced technology nodes. This is because the lower STO step height increases the active area of the small component and thus leads to higher Idsat and conventional leakage current I _DDQ losses.

In another embodiment, since the cerium concentration is maintained at a level lower than that of the phosphorous acid solution, precipitation defects of cerium oxide can be eliminated or reduced while maintaining stable etching performance. In another embodiment, the chemical life of the etchant can be extended and the cost of the chemical can be reduced.

Figure 12 is a schematic view of another embodiment, the schematic of which is an etching system 430. Etching system 430 includes a vessel 302 configured to contain an etchant for etching. In this embodiment, the etching solution is a phosphorous acid solution. More specifically, the etching solution includes phosphorous acid (H ₃ PO ₄ ) and water (H ₂ O).

The etching system 430 includes a circulation mechanism 320 in combination with the vessel 302 and is designed to circulate etchant for various functions, such as heating and filtration. In one embodiment, a heater 322 is combined with the circulation mechanism 320 to heat the etchant to maintain the temperature of the etchant to a specific temperature for an optimized etch. In another example, other components, such as valves, filters, and pumps, are combined with the circulation mechanism 320. Other similar features are shown in Fig. 12 and therefore similar descriptions are not repeated.

The etching system 430 includes a helium monitoring module 432 coupled to the vessel 302 for monitoring the radon concentration of the etchant. The UI monitor module 432 also includes a measurement unit 434. Measurement unit 434, in combination with other components, is used to measure the erbium concentration.

Figure 13 is a flow chart constructed in accordance with another embodiment, the flow chart of which is performed by etching method 460 to etch and maintain etchant. concentration. Method 460 is similar to method 400, but the germanium concentration is not directly measured by the helium monitor, but is predicted from manufacturing data, such as the amount of tantalum nitride etched.

More specifically, method 460 includes an operation 462 of predicting the erbium concentration of the etchant based on the manufacturing data. The prediction of the erbium concentration of the etchant is achieved based on the manufacturing data simulating the amount of yttrium nitride nitride. In one embodiment, the prediction is based on the last time the etchant was replaced, the etchant etches the number of wafers. In one embodiment, the prediction is based on the number of wafers and the amount of tantalum nitride consumed per wafer, such as the patterned area of the tantalum nitride layer on the wafer multiplied by the etch thickness. The amount of enthalpy added to the etchant can be determined. Therefore, the erbium concentration of the etchant can be calculated.

In method 460, operation 406 is based on the predicted enthalpy concentration rather than being measured. More specifically, operation 406 determines a volume to be replaced between the etchant and the new etchant based on the predicted erbium concentration to maintain the erbium concentration within a predetermined range (or value). In one embodiment, the volume ΔV is determined by the general formula (V-ΔV)*C=V*C ₀ . The parameter V is the total volume of the etchant before excretion, C is the predicted enthalpy concentration, and C ₀ is the predetermined erbium concentration.

In another embodiment, the method includes measuring and predicting a combination of erbium concentrations of the etchant. For example, after etching a plurality of wafers using an etchant, the germanium concentration is measured and adjusted accordingly. Between measurements, based on manufacturing data, the enthalpy concentration is predicted and adjusted accordingly.

Accordingly, the present disclosure provides an embodiment of an etching system. The etching system includes a storage tank configured to receive an etchant for etching; The helium monitor is configured to measure the radon concentration of the etchant; a drain module in combination with the reservoir and operatively drain the etchant; and a supply module operatively filling the new etchant to the reservoir.

In one embodiment, the etching system further includes an etchant controller in combination with the helium monitor, wherein the etchant controller is designed to determine the volume that the etchant needs to replace based on the helium concentration of the helium monitor.

In another embodiment, the controller is further coupled to the drain module and can activate the drain module to drain the replacement volume of etchant from the reservoir. In another embodiment, the controller is further combined with the supply module and can activate the supply module to fill the replacement volume of the new etchant for the storage tank.

In another embodiment, the helium monitor includes an inductively coupled plasma atomic emission spectrometer (ICP-AES) to measure the radon concentration of the etchant. In another embodiment, the supply module is combined with an etchant source having a source of etchant having phosphorous acid.

The present disclosure also provides an embodiment of a method including etching using an etchant; determining a ruthenium concentration of the etchant; and adjusting a ruthenium concentration of the etchant to a predetermined erbium concentration based on the determined erbium concentration.

In one embodiment of the method, determining the erbium concentration of the etchant comprises the erbium concentration measured by the enthalpy monitor. In another embodiment, determining the cerium concentration of the etchant includes a cerium concentration predicted based on the manufacturing data.

In another embodiment, adjusting the erbium concentration of the etchant includes draining the etchant of volume ΔV in the container; and filling the new etchant to a volume ΔV of the container.

In another embodiment, the volume ΔV is determined based on the measured erbium concentration and a predetermined erbium concentration. In a further embodiment, the volume ΔV is determined by the general formula (V-ΔV)*C=V*C ₀ , where the parameter V is the total volume of the etchant before excretion and C is the measured enthalpy The concentration, and C _{0 ,} is the predetermined enthalpy concentration.

In another embodiment, the etchant has phosphorous acid; and the etching process includes applying an etchant to the substrate to selectively etch the tantalum nitride. In another embodiment, the predetermined concentration of ruthenium is selected to be less than the saturation concentration of ruthenium.

In another embodiment, the predetermined germanium concentration is selected to be sufficiently high that the etchant can selectively etch tantalum nitride relative to the yttria. In another embodiment, the method further includes performing another etch process with the conditioned etchant.

The present disclosure also provides another embodiment of a method. The method includes forming a tantalum nitride layer on a semiconductor substrate; patterning a tantalum nitride layer to form an opening therein; etching the semiconductor substrate with the patterned tantalum nitride layer as an etching mask to form a semiconductor substrate a trench; filling a dielectric material including yttrium oxide in the trench; chemical mechanical polishing of the semiconductor substrate; and adjusting a germanium concentration of the etchant having phosphorous acid to a predetermined germanium concentration; and removing the patterned nitrogen with an etching solution矽 layer.

In one embodiment, adjusting the cerium concentration comprises measuring the cerium concentration of the etchant; etching the volume ΔV of the etchant in the vessel; and filling the new etchant to a volume ΔV of the vessel.

In another embodiment, the volume ΔV is determined based on the measured erbium concentration and a predetermined erbium concentration. In a further embodiment, the volume ΔV is determined by the general formula (V-ΔV)*C=V*C ₀ , where the parameter V is the total volume of the etchant before excretion and C is the measured enthalpy The concentration, and C _{0 ,} is the predetermined enthalpy concentration.

While the invention has been described above in terms of several preferred embodiments, it is not intended to limit the scope of the present invention, and any one of ordinary skill in the art can make any changes without departing from the spirit and scope of the invention. And the scope of the present invention is defined by the scope of the appended claims.

100‧‧‧ method

102~116‧‧‧ operation

Claims (10)

A semiconductor etching system comprising: a storage tank configured to receive an etching solution for etching; a monitor configured to measure a germanium concentration of the etching liquid; a drain module coupled to the storage tank and operable To excrete the etching solution; and a supply module operable to fill the storage tank with a new etching solution. The semiconductor etching system of claim 1, further comprising an etching liquid controller coupled to the germanium monitor, wherein the etching liquid controller is configured to determine the etching based on a germanium concentration obtained from the germanium monitor A volume that needs to be replaced by the liquid. The semiconductor etching system of claim 2, wherein the controller is further coupled to the drain module and activates a draining operation of the draining module to drain the volume of etching liquid from the storage tank. The semiconductor etching system of claim 2, wherein the controller is further coupled to the supply module and activates a filling operation of the supply module to fill a volume of the new etching liquid to the storage tank. A semiconductor etching method comprising: performing an etching treatment using an etching solution; Determining a concentration of the etching solution; and adjusting the concentration of the etching solution to a predetermined concentration based on the determined concentration of the germanium. The semiconductor etching method of claim 5, wherein determining the concentration of the germanium of the etching solution comprises measuring the germanium concentration by a monitor. The semiconductor etching method of claim 5, wherein determining the concentration of the germanium of the etching solution comprises predicting the germanium concentration based on manufacturing data. The semiconductor etching method of claim 5, wherein adjusting the concentration of the germanium of the etching solution comprises: discharging an etchant having a volume of ΔV in a container; and filling a new etching solution of the volume ΔV into the container. A semiconductor etching method comprising: forming a tantalum nitride layer on a semiconductor substrate; patterning the tantalum nitride layer to form an opening therein; etching the semiconductor by using the patterned tantalum nitride layer as an etching mask Substrate, thereby forming a trench in the semiconductor substrate; filling a dielectric material containing yttrium oxide in the trench; performing a chemical mechanical polishing on the semiconductor substrate; and adjusting a germanium concentration of an etchant having phosphorous acid to a predetermined concentration of germanium; The patterned tantalum nitride layer is removed by the etching solution. The semiconductor etching method of claim 9, wherein adjusting the germanium concentration comprises: measuring a germanium concentration of the etching liquid; discharging the etching liquid having a volume ΔV in a container; and filling a new etching liquid having a volume ΔV to the container.