TWI538743B - Liquid supply device - Google Patents

Liquid supply device Download PDF

Info

Publication number
TWI538743B
TWI538743B TW103106567A TW103106567A TWI538743B TW I538743 B TWI538743 B TW I538743B TW 103106567 A TW103106567 A TW 103106567A TW 103106567 A TW103106567 A TW 103106567A TW I538743 B TWI538743 B TW I538743B
Authority
TW
Taiwan
Prior art keywords
liquid supply
liquid
supply path
nozzle
valve
Prior art date
Application number
TW103106567A
Other languages
Chinese (zh)
Other versions
TW201440897A (en
Inventor
大久保敬弘
戶塚誠也
Original Assignee
東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京威力科創股份有限公司 filed Critical 東京威力科創股份有限公司
Publication of TW201440897A publication Critical patent/TW201440897A/en
Application granted granted Critical
Publication of TWI538743B publication Critical patent/TWI538743B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Coating Apparatus (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)

Description

液體供給裝置 Liquid supply device

本發明係關於一種液體供給裝置,用以透過噴嘴將處理液供給至被處理體。 The present invention relates to a liquid supply device for supplying a treatment liquid to a target object through a nozzle.

作為供給藥液等的處理液以進行液體處理的單片式裝置,可舉例如,將包含光阻液或絕緣膜之前驅物的藥液等塗布於旋轉夾頭上的晶圓的裝置。此種液體處理裝置,係將處理液供給至晶圓的液體供給裝置,其中,係從設於液體供給路徑之下游端的液體吐出部、即噴嘴吐出處理液,並藉由開閉閥的開閉,進行處理液的供給與遮斷。在停止從噴嘴供給處理液之後,若處理液垂滴至晶圓上,則會造成晶圓上之液膜的膜厚分布不均勻,而使得該晶圓成為不良品。因此,在滴液成為問題的情況中,一般會在開閉閥的下游側設置回吸閥(Suck back valve),在將開閉閥關閉之後,藉由回吸閥將液體吸回。 As a monolithic apparatus for supplying a treatment liquid such as a chemical solution, for example, a chemical solution containing a photoresist or an insulating film precursor is applied to a wafer on a rotary chuck. The liquid processing apparatus is a liquid supply apparatus that supplies the processing liquid to the wafer, and discharges the processing liquid from the liquid discharge unit provided at the downstream end of the liquid supply path, that is, the opening and closing of the opening and closing valve. Supply and interruption of the treatment liquid. After the supply of the treatment liquid from the nozzle is stopped, if the treatment liquid is dripped onto the wafer, the film thickness distribution of the liquid film on the wafer is uneven, and the wafer becomes a defective product. Therefore, in the case where the dripping liquid is a problem, a suction back valve (Suck back valve) is generally provided on the downstream side of the opening and closing valve, and after the opening and closing valve is closed, the liquid is sucked back by the suck back valve.

然而,若急遽將開閉閥關閉,則液壓產生極大的變動,而使得處理液在液體供給路徑內於流動方向上振動,即引起所謂的水錘(Water Hammer)現象。因此,在回吸閥動作的時間點並不適當的情況下,液體振動的幅度增加,可能導致液體從噴嘴飛濺出來。若液體供給路徑的長度尺寸越長,則水錘現象變得越顯著。回吸閥動作的時間點,雖宜設定在液體振動平靜之後,但若該時間點太遲,則會導致處理速度變慢。因此,若要兼顧兩者 而設定該時間點,則因為該時間點難以設定而成為了問題;此外,即使將該時間點延遲,亦可能在回吸閥動作之前,因為液體振動而導致液體從噴嘴飛濺出來。 However, if the opening and closing valve is suddenly shut down, the hydraulic pressure is greatly changed, and the treatment liquid vibrates in the flow direction in the liquid supply path, that is, causes a so-called Water Hammer phenomenon. Therefore, in the case where the timing of the operation of the suckback valve is not appropriate, the amplitude of the liquid vibration increases, which may cause the liquid to splash out from the nozzle. If the length dimension of the liquid supply path is longer, the water hammer phenomenon becomes more remarkable. The time point at which the suction valve operates should be set after the liquid vibration is calm, but if the time is too late, the processing speed will be slow. Therefore, if you want to balance the two Setting this time point is difficult because the time point is difficult to set; in addition, even if the time point is delayed, it is possible that the liquid splashes out of the nozzle due to liquid vibration before the suckback valve operates.

專利文獻1中,雖對於回吸閥有所記載,但並未討論水錘現象。 In Patent Document 1, although the suction valve is described, the water hammer phenomenon is not discussed.

【先行技術文獻】 [First technical literature] 【專利文獻】 [Patent Literature]

【專利文獻1】日本特開2000-223402 [Patent Document 1] Japanese Patent Laid-Open No. 2000-223402

本發明係鑒於上述情事所完成者,其目的係在於提供一種液體供給裝置,可在將處理液從噴嘴供給至被處理體時,抑制因為閥關閉時的水錘現象所造成的滴液(Dripping)。 The present invention has been made in view of the above circumstances, and an object thereof is to provide a liquid supply device capable of suppressing dripping due to a water hammer phenomenon when a valve is closed when a processing liquid is supplied from a nozzle to a target object (Dripping ).

本發明之液體供給裝置,係用以將處理液從噴嘴供給至被處理體的液體供給裝置,其特徵為包含:第1液體供給路徑,相當於具有彎曲部位的流路之中該彎曲部位的上游側,其上游側與該處理液的液體供給源連接;閥,插設於該第1液體供給路徑,用以進行處理液的供給與遮斷;第2液體供給路徑,相當於該流路之中該彎曲部位的下游側,其下游端設有噴嘴;用於吸收振動的可動壁部,構成接近該彎曲部位的壁部,可自由進退;驅動部,用以在該閥關閉時,處理液被壓出至該噴嘴側之後被吸回至該閥側時,使該用於吸收振動的可動壁部後退;以及吸引機構,設在該第2液體供給路徑的下游側,用以在來自該噴嘴的液體之吐出結束且該用於吸收振動的可動壁部後退後,吸入該噴嘴內的處理液的液面。 The liquid supply device of the present invention is a liquid supply device for supplying a processing liquid from a nozzle to a target object, and is characterized in that the first liquid supply path includes a curved portion corresponding to a curved portion. On the upstream side, the upstream side is connected to the liquid supply source of the treatment liquid; the valve is inserted in the first liquid supply path for supplying and blocking the treatment liquid; and the second liquid supply path corresponds to the flow path a downstream side of the curved portion, a nozzle at a downstream end thereof, a movable wall portion for absorbing vibration, a wall portion close to the curved portion, and freely advancing and retracting, and a driving portion for processing when the valve is closed When the liquid is pushed out to the nozzle side and then sucked back to the valve side, the movable wall portion for absorbing vibration is retracted; and the suction mechanism is provided on the downstream side of the second liquid supply path for coming from After the discharge of the liquid of the nozzle is completed and the movable wall portion for absorbing the vibration is receded, the liquid level of the treatment liquid in the nozzle is sucked.

該液體供給裝置,亦可為下述構成。具備控制該驅動部之控制部的構成。該控制部係如下所述之構成:以「在該閥封閉並經過設定時間之後,使該可動壁部後退」的方式輸出控制信號。該控制部係如下所述之構成:以「在該閥開啟的同時或正在開啟時,使該可動壁部前進」的方式輸出控制信號。該可動壁部係由隔膜(Diaphragm)所構成。該第2液體供給路徑上,設有將該噴嘴內的處理液吸引至該閥側的吸引機構。 The liquid supply device may have the following configuration. A configuration of a control unit that controls the drive unit is provided. The control unit is configured to output a control signal such that "the movable wall portion is retracted after the valve is closed and the set time elapses." The control unit is configured to output a control signal such that "the movable wall portion is advanced when the valve is opened or is being opened". The movable wall portion is composed of a diaphragm. The second liquid supply path is provided with a suction mechanism that sucks the processing liquid in the nozzle to the valve side.

本發明中,在將液體供給源的處理液從噴嘴吐出時,使液體供給源與噴嘴之間的第1液體供給路徑及該第2液體供給路徑,以形成其方向互相交叉的方式,分別與液壓調整室連接。另外,以與液壓調整室中的第2液體供給路徑的上游端對向的壁部,構成自由進退的可動壁部。接著,在設於第1液體供給路徑的閥封閉時,在處理液被壓出至噴嘴側之後被吸回至閥側時,使可動壁部後退。因此,可在處理液的吐出結束後,抑制來自噴嘴的滴液。 In the present invention, when the processing liquid of the liquid supply source is discharged from the nozzle, the first liquid supply path and the second liquid supply path between the liquid supply source and the nozzle are formed so that the directions intersect each other. Hydraulic adjustment chamber connection. Further, the wall portion facing the upstream end of the second liquid supply path in the hydraulic pressure adjustment chamber constitutes a movable wall portion that is free to advance and retreat. Next, when the valve provided in the first liquid supply path is closed, the movable wall portion is retracted when the process liquid is sucked out to the nozzle side and then sucked back to the valve side. Therefore, it is possible to suppress the dripping from the nozzle after the discharge of the treatment liquid is completed.

1‧‧‧集合噴嘴 1‧‧‧Collection nozzle

2‧‧‧液體供給源 2‧‧‧Liquid supply

3‧‧‧液體供給路徑 3‧‧‧Liquid supply path

3A‧‧‧第1液體供給路徑 3A‧‧‧1st liquid supply path

3B‧‧‧第2液體供給路徑 3B‧‧‧Second liquid supply path

4‧‧‧液供給控制部 4‧‧‧Liquid Supply Control Department

5~7‧‧‧隔膜 5~7‧‧‧Separator

8‧‧‧液壓調整室 8‧‧‧Hydraulic adjustment room

10‧‧‧基部 10‧‧‧ base

11‧‧‧處理部 11‧‧‧Processing Department

12‧‧‧旋轉夾頭 12‧‧‧Rotary chuck

13‧‧‧杯體 13‧‧‧ cup body

14‧‧‧升降銷 14‧‧‧lifting pin

15‧‧‧輔助噴嘴 15‧‧‧Auxiliary nozzle

16‧‧‧噴嘴待命部 16‧‧‧Nozzle Standby

17‧‧‧臂部 17‧‧‧ Arms

18‧‧‧導軌 18‧‧‧ rails

21‧‧‧臂部 21‧‧‧ Arms

22‧‧‧導軌 22‧‧‧ rails

23‧‧‧噴頭 23‧‧‧Spray

24‧‧‧噴嘴 24‧‧‧Nozzles

25‧‧‧送液用流路 25‧‧‧Flow channel for liquid delivery

26‧‧‧固定部 26‧‧‧ Fixed Department

27‧‧‧噴嘴待命部 27‧‧‧Nozzle Standby

31A‧‧‧開閉閥 31A‧‧‧Opening and closing valve

31B‧‧‧液壓調整閥 31B‧‧‧Hydraulic adjustment valve

31C‧‧‧回吸閥 31C‧‧‧Retraction valve

33‧‧‧流入口 33‧‧‧Inlet

34‧‧‧排出口 34‧‧‧Export

36‧‧‧閥 36‧‧‧Valves

37‧‧‧流量調整部 37‧‧‧Flow Adjustment Department

38‧‧‧儲存部 38‧‧‧ Storage Department

41‧‧‧控制部 41‧‧‧Control Department

51‧‧‧劃分壁 51‧‧‧ partition wall

52‧‧‧支持部 52‧‧‧Support Department

53‧‧‧驅動部 53‧‧‧ Drive Department

54‧‧‧進退軸 54‧‧‧Advance and retraction axis

55‧‧‧壓電元件 55‧‧‧Piezoelectric components

56‧‧‧壓電基板 56‧‧‧Piezoelectric substrate

57‧‧‧電極膜 57‧‧‧Electrode film

58‧‧‧支持部 58‧‧‧Support Department

59‧‧‧高頻電源部 59‧‧‧High Frequency Power Supply Department

61‧‧‧磁石 61‧‧‧ Magnet

62‧‧‧支持部 62‧‧‧Support Department

63‧‧‧電磁石 63‧‧‧Electrical Stone

64‧‧‧直流電源部 64‧‧‧DC Power Supply Department

65‧‧‧開關 65‧‧‧ switch

71‧‧‧薄膜 71‧‧‧film

72‧‧‧驅動部 72‧‧‧ Drive Department

73‧‧‧進退軸 73‧‧‧Advance and retraction axis

W‧‧‧晶圓 W‧‧‧ wafer

【圖1】係顯示具備本發明之液體供給裝置之光阻塗布裝置的立體圖。 Fig. 1 is a perspective view showing a photoresist coating apparatus including the liquid supply device of the present invention.

【圖2】係顯示該液體供給裝置的縱剖面圖。 Fig. 2 is a longitudinal sectional view showing the liquid supply device.

【圖3】係示意顯示該液體供給裝置中的流路之一部分的立體圖。 Fig. 3 is a perspective view schematically showing a part of a flow path in the liquid supply device.

【圖4】係顯示該光阻塗布裝置中各閥開閉之時間點的示意圖。 Fig. 4 is a view showing a time point at which each valve in the photoresist coating device is opened and closed.

【圖5】係示意顯示習知液體供給裝置中的作用的縱剖面圖。 Fig. 5 is a longitudinal sectional view schematically showing the action in a conventional liquid supply device.

【圖6】係示意顯示習知液體供給裝置中的作用的縱剖面圖。 Fig. 6 is a longitudinal sectional view schematically showing the action in a conventional liquid supply device.

【圖7】係顯示習知液體供給裝置與本發明之液體供給裝置之中,液壓變動的特性圖。 Fig. 7 is a characteristic diagram showing hydraulic fluctuations in a conventional liquid supply device and a liquid supply device of the present invention.

【圖8】係示意顯示本發明之液體供給裝置中的作用的縱剖面圖。 Fig. 8 is a longitudinal sectional view schematically showing the action in the liquid supply device of the present invention.

【圖9】係示意顯示本發明之液體供給裝置中的作用的縱剖面圖。 Fig. 9 is a longitudinal sectional view schematically showing the action in the liquid supply device of the present invention.

【圖10】係示意顯示本發明之液體供給裝置中的作用的縱剖面圖。 Fig. 10 is a longitudinal sectional view schematically showing the action in the liquid supply device of the present invention.

【圖11】係示意顯示本發明之液體供給裝置中的作用的縱剖面圖。 Fig. 11 is a longitudinal sectional view schematically showing the action in the liquid supply device of the present invention.

【圖12】係顯示本發明之液體供給裝置之其他實施例的縱剖面圖。 Fig. 12 is a longitudinal sectional view showing another embodiment of the liquid supply device of the present invention.

【圖13】係顯示本發明之液體供給裝置之其他實施例的縱剖面圖。 Fig. 13 is a longitudinal sectional view showing another embodiment of the liquid supply device of the present invention.

【圖14】係顯示本發明之液體供給裝置之其他實施例的縱剖面圖。 Fig. 14 is a longitudinal sectional view showing another embodiment of the liquid supply device of the present invention.

【圖15】係顯示本發明之液體供給裝置之其他實施例的縱剖面圖。 Fig. 15 is a longitudinal sectional view showing another embodiment of the liquid supply device of the present invention.

【圖16】係顯示本發明之液體供給裝置之其他實施例的縱剖面圖。 Fig. 16 is a longitudinal sectional view showing another embodiment of the liquid supply device of the present invention.

【圖17】係顯示本發明之液體供給裝置之其他實施例中,各閥開閉時間點的示意圖。 Fig. 17 is a view showing the time at which each valve is opened and closed in another embodiment of the liquid supply device of the present invention.

以下參照圖1~圖3,一併說明本發明之實施態樣的液體供給裝置,以及應用該液體供給裝置的光阻塗布裝置。該光阻塗布裝置,用以對於成為被處理體之基板的晶圓W進行處理液、即光阻液的塗布,其具備:複數、例如三個處理部11,在横向上並排配置;液體供給控制部4,用以對配置於各處理部11的晶圓W供給光阻液。首先,簡單說明液體供給控制部4以外的部位。 Hereinafter, a liquid supply device according to an embodiment of the present invention and a photoresist coating device to which the liquid supply device is applied will be described with reference to Figs. 1 to 3 . The photoresist coating apparatus is configured to apply a treatment liquid, that is, a photoresist liquid, to a wafer W that is a substrate of a target object, and includes a plurality of, for example, three processing units 11 arranged side by side in the lateral direction; The control unit 4 supplies the photoresist to the wafer W disposed in each of the processing units 11. First, a portion other than the liquid supply control unit 4 will be briefly described.

如圖1所示,各處理部11中,設有用以吸引保持晶圓W之背面側的旋轉夾頭12;各旋轉夾頭12,係以藉由圖中未顯示的旋轉機構繞著垂直軸自由旋轉的方式所構成。圖1中,13為杯體、14為用以使晶圓W升降的升降銷。另外,圖1中,10為配置各處理部11的基部。 As shown in FIG. 1, each processing unit 11 is provided with a rotary chuck 12 for sucking and holding the back side of the wafer W; each of the rotary chucks 12 is wound around a vertical axis by a rotating mechanism not shown in the drawing. The method of free rotation. In Fig. 1, 13 is a cup body, and 14 is a lift pin for lifting and lowering the wafer W. In addition, in FIG. 1, 10 is the base part which arrange|positions each process part 11.

各處理部11中,設置有:輔助噴嘴15,其吐出稀釋液,以從形成有光阻膜之晶圓W的邊緣部去除該光阻膜;及噴嘴待命部16,用以使該輔助噴嘴15待機。接著,輔助噴嘴15係以下述方式所構成:由臂部17所支持,並且可在與晶圓W的邊緣部上方對向的位置及噴嘴待命部16上方的位置之間,沿著導軌18在水平方向上移動。 Each processing unit 11 is provided with an auxiliary nozzle 15 that discharges a diluent to remove the photoresist film from an edge portion of the wafer W on which the photoresist film is formed, and a nozzle standby portion 16 for making the auxiliary nozzle 15 standby. Next, the auxiliary nozzle 15 is constructed in such a manner as to be supported by the arm portion 17 and between the position opposing the edge portion of the wafer W and the position above the nozzle standby portion 16, along the guide rail 18 Move in the horizontal direction.

基部10上,設有用以對晶圓W供給光阻液的集合噴嘴1,以作為液體 吐出部;該集合噴嘴1,係設置為共用於前述各處理部11的光阻供給部。具體而言,集合噴嘴1係以下述方式所構成:由臂部21所支持,並可沿著導軌22自由移動,該導軌22係沿著該等處理部11的並排方向鋪設。另外,該集合噴嘴1亦可以下述方式構成:在臂部21的前端部之噴頭23的底面側,配置複數噴嘴24。亦即,集合噴嘴1係以「可對各處理部11中的各晶圓W,供給濃度及成分不同的多種光阻液及稀釋液」的方式所構成,並且使該等各噴嘴24沿著該集合噴嘴1的移動路徑配置成一列。又,圖1等之中,省略該等噴嘴24的數量。 On the base 10, a collecting nozzle 1 for supplying a photoresist to the wafer W is provided as a liquid The collecting portion 1 is provided in common to the photoresist supply portion of each of the processing units 11. Specifically, the collecting nozzle 1 is configured to be supported by the arm portion 21 and freely movable along the guide rail 22 which is laid along the side-by-side direction of the processing portions 11. Further, the collective nozzle 1 may be configured such that a plurality of nozzles 24 are disposed on the bottom surface side of the head 23 of the distal end portion of the arm portion 21. In other words, the collective nozzle 1 is configured such that "a plurality of photoresist liquids and diluents having different concentrations and compositions can be supplied to each wafer W in each processing portion 11", and the nozzles 24 are along The moving paths of the collecting nozzles 1 are arranged in a row. Further, in FIG. 1 and the like, the number of the nozzles 24 is omitted.

從該集合噴嘴1的各噴嘴24延伸出來的彈性(具可撓性的)液體供給路徑3的中途部位,固定於集合噴嘴1的臂部21;各液體供給路徑3之上游側(與噴嘴24的相反側)的端部,透過本發明之液體供給控制部4,與液體供給源2連接。液體供給路徑3,在臂部21與液體供給控制部4之間,藉由固定部26固定於基部10;如後所述,液體供給控制部4的內部及該液體供給控制部4的附近,係以例如金屬等的硬質構件所構成。為了以沿著各處理部11之並排方向自由移動的方式構成集合噴嘴1,液體供給路徑3在固定部26與集合噴嘴1之間的長度尺寸形成例如0.5m~3.0m。 The intermediate portion of the elastic (flexible) liquid supply path 3 extending from each of the nozzles 24 of the collective nozzle 1 is fixed to the arm portion 21 of the collecting nozzle 1 and the upstream side of each liquid supply path 3 (with the nozzle 24) The end of the opposite side is connected to the liquid supply source 2 through the liquid supply control unit 4 of the present invention. The liquid supply path 3 is fixed to the base 10 between the arm portion 21 and the liquid supply control unit 4 by the fixing portion 26; as will be described later, the inside of the liquid supply control unit 4 and the vicinity of the liquid supply control unit 4, It is made of a hard member such as metal. In order to form the collecting nozzle 1 so as to be movable along the direction in which the respective processing units 11 are arranged in parallel, the length of the liquid supply path 3 between the fixed portion 26 and the collecting nozzle 1 is, for example, 0.5 m to 3.0 m.

各液體供給源2,與作為驅動部的送液用流路25連接,該送液用流路25係用以將空氣等供給至該液體供給源2之內部的氣相側等,其係以將液體供給源2內加壓,而將處理液送出至液體供給路徑3的方式所構成。又,圖1中,關於液體供給路徑3及液體供給源2,僅描繪多種光阻液中的一種及稀釋液,以作為代表。另外,各液體供給源2,被收納載置於例如,光阻塗布裝置的下方側的收納部,此處僅示意地將其描繪於光阻塗布裝置的側方側。圖1中,27係用以使集合噴嘴1待機的噴嘴待命部。 Each of the liquid supply sources 2 is connected to a liquid supply flow path 25 as a driving unit for supplying air or the like to the gas phase side inside the liquid supply source 2, etc. The liquid supply source 2 is pressurized, and the treatment liquid is sent to the liquid supply path 3. In addition, in FIG. 1, about the liquid supply path 3 and the liquid supply source 2, only one of the various photoresist liquids and the diluent liquid are shown, and it is represented. Further, each of the liquid supply sources 2 is housed in a storage portion placed on the lower side of the photoresist coating device, for example, and is schematically depicted on the side of the photoresist coating device. In Fig. 1, 27 is a nozzle standby portion for allowing the collecting nozzle 1 to stand by.

接著,說明本發明之實施態樣的液體供給裝置。該液體供給裝置,具備插設於液體供給路徑3的液體供給控制部4。液體供給控制部4,如圖2所示,係以沿著處理液的流路(液體供給路徑3),從上游側開始依序配置有下述構件的方式所構成:開閉閥31A,進行處理液的供給與遮斷;液壓調 整閥31B;及回吸閥31C。該等閥31A~31C,係分別由隔膜5~7所構成。開閉閥31A之上游側(液體供給源2側)的液體供給路徑3,係沿著隔膜5所形成的面水平延伸,而下游側的液體供給路徑3係在接近隔膜5中央的部位,朝向下方側垂直彎曲。該下游側的液體供給路徑3,係以沿著液壓調整閥31B的隔膜6所形成的面在上下方向上延伸的方式,與該液壓調整閥31B連接。液壓調整閥31B之下游側的液體供給路徑3,在接近隔膜6中央的部位垂直彎曲而水平地延伸出去。 Next, a liquid supply device according to an embodiment of the present invention will be described. This liquid supply device includes a liquid supply control unit 4 that is inserted into the liquid supply path 3. As shown in FIG. 2, the liquid supply control unit 4 is configured such that the following members are arranged in order from the upstream side along the flow path (liquid supply path 3) of the processing liquid: the opening and closing valve 31A is processed. Liquid supply and interruption; hydraulic adjustment The entire valve 31B; and the suckback valve 31C. The valves 31A to 31C are composed of diaphragms 5 to 7, respectively. The liquid supply path 3 on the upstream side (the liquid supply source 2 side) of the opening and closing valve 31A extends horizontally along the surface formed by the diaphragm 5, and the liquid supply path 3 on the downstream side is located near the center of the diaphragm 5, facing downward. The side is bent vertically. The liquid supply path 3 on the downstream side is connected to the hydraulic pressure adjusting valve 31B so as to extend in the vertical direction along the surface formed by the diaphragm 6 of the hydraulic pressure adjusting valve 31B. The liquid supply path 3 on the downstream side of the hydraulic pressure adjusting valve 31B is vertically bent at a portion close to the center of the diaphragm 6 to extend horizontally.

如此,液體供給路徑3,有兩處垂直彎曲,上游側的彎曲部位設有開閉閥31A,另外,下游側的彎曲部位設有液壓調整閥31B。以下的說明中,將液壓調整閥31B之上游側的液體供給路徑3及下游側的液體供給路徑3,分別稱為「第1液體供給路徑3A」及「第2液體供給路徑3B」。回吸閥31C,設於第2液體供給路徑3B。此例中,開閉閥31A與液壓調整閥31B之間的第1液體供給路徑3A,以及液壓調整閥31B與回吸閥31C之間的第2液體供給路徑3B,係由例如金屬等硬質的材質所構成。 As described above, the liquid supply path 3 has two vertical bending portions, and the upstream side curved portion is provided with the opening and closing valve 31A, and the downstream side curved portion is provided with the hydraulic pressure adjusting valve 31B. In the following description, the liquid supply path 3 on the upstream side of the hydraulic pressure adjustment valve 31B and the liquid supply path 3 on the downstream side are referred to as "first liquid supply path 3A" and "second liquid supply path 3B", respectively. The suckback valve 31C is provided in the second liquid supply path 3B. In this example, the first liquid supply path 3A between the on-off valve 31A and the hydraulic pressure adjustment valve 31B, and the second liquid supply path 3B between the hydraulic pressure adjustment valve 31B and the suction valve 31C are made of a hard material such as metal. Composition.

液壓調整閥31B,雖如上所述,可說是設於流路的彎曲部位,但因為該彎曲部位,如後所述,係抑制「在開閉閥31A關閉時所產生之水錘現象所造成之壓力變動」的部位,故又稱為液壓調整室8。 As described above, the hydraulic pressure adjusting valve 31B can be said to be a curved portion provided in the flow path. However, as will be described later, the bending portion is prevented from being caused by the water hammer phenomenon which occurs when the opening and closing valve 31A is closed. The portion of the pressure change is also referred to as the hydraulic pressure adjustment chamber 8.

各閥31A~31C中設有:流入口33,使例如空氣等的流體流入隔膜5~7的背面側的區域;及排出口34,使該空氣排出。因此,隔膜5~7係以下述方式所構成:若空氣流入該區域,則各隔膜5~7往處理液的流動方向前進,另一方面,若從該區域排出空氣,則該隔膜5~7因為其剛性所造成的復元力,相對於該液體流動方向後退。圖2中,36及37分別為閥及流量調整部,38為儲存空氣等流體的儲存部。又,後述的圖4中,將從流入口33使空氣流入隔膜5~7之背面側區域的動作稱為「ON」,從排出口34排出的動作稱為「OFF」,以進行說明。 Each of the valves 31A to 31C is provided with an inflow port 33 for allowing a fluid such as air to flow into a region on the back side of the diaphragms 5 to 7 and a discharge port 34 for discharging the air. Therefore, the diaphragms 5 to 7 are configured such that when the air flows into the region, the diaphragms 5 to 7 advance in the flow direction of the treatment liquid, and on the other hand, if the air is discharged from the region, the diaphragms 5 to 7 Because of the stiffness caused by the resilience, it retreats relative to the direction of flow of the liquid. In Fig. 2, 36 and 37 are respectively a valve and a flow rate adjusting portion, and 38 is a storage portion for storing a fluid such as air. In FIG. 4, which will be described later, the operation of causing air to flow into the back side region of the diaphragms 5 to 7 from the inflow port 33 is referred to as "ON", and the operation of discharging from the discharge port 34 is referred to as "OFF".

因此,開閉閥31A的隔膜5係以下述方式所構成:藉由在相對於朝向集合噴嘴1之液體流向往上方側離開的位置(開放位置),以及將往下延伸之 第1液體供給路徑3A的上端開口部封阻的位置(封閉位置)之間進退,以進行處理液的供給與遮斷。圖2中,35係彈簧等的推壓機構,其用以將開閉閥31A中的隔膜5往上方偏壓(拉起)。又,圖2中,係以簡化的方式描繪集合噴嘴1。 Therefore, the diaphragm 5 of the opening and closing valve 31A is configured such that it is separated from the liquid toward the upper side toward the upper side of the collecting nozzle 1 (open position), and is extended downward. The position (closed position) at which the upper end opening of the first liquid supply path 3A is blocked is advanced and retracted to supply and shut off the processing liquid. In Fig. 2, a pressing mechanism such as a 35-series spring is used to bias (pulse) the diaphragm 5 in the opening and closing valve 31A upward. Further, in Fig. 2, the collecting nozzle 1 is depicted in a simplified manner.

液壓調整室8的隔膜6,如圖2及圖3所示,構成可動壁部;該可動壁部,係以成為與該液壓調整室8中的第2液體供給路徑3B的上游端對向之壁部的方式配置,並可沿著該第2液體供給路徑3B延伸之方向進退。亦即,該隔膜6係以可在下述兩位置之間進退的方式構成:在液壓調整室8中,相對於從第1液體供給路徑3A往第2液體供給路徑3B之液體流動往側方側離開的位置,以及相較於該位置更從第2液體供給路徑3B離開(後退)的位置。該隔膜6,如以下所詳述,並非係進行液體流動的供給與遮斷,而是具有抑制第2液體供給路徑3B的內部或液壓調整室8的內部之液壓變動(脈動)的功能。此處,對於本發明中設置這種液壓調整閥31B的理由,換言之,對於以往的液體供給路徑3中產生液壓脈動的理由,於以下進行說明。又,圖3係顯示縱向將液壓調整室8切開的態樣。 As shown in FIGS. 2 and 3, the diaphragm 6 of the hydraulic pressure adjustment chamber 8 constitutes a movable wall portion that faces the upstream end of the second liquid supply path 3B in the hydraulic pressure adjustment chamber 8. The wall portion is disposed in such a manner as to advance and retreat in a direction in which the second liquid supply path 3B extends. In other words, the diaphragm 6 is configured to be movable forward and backward between the two positions: the liquid flow from the first liquid supply path 3A to the second liquid supply path 3B to the lateral side in the hydraulic pressure adjustment chamber 8 The position to leave and the position to be separated (retracted) from the second liquid supply path 3B compared to the position. As described in detail below, the diaphragm 6 has a function of suppressing the hydraulic fluctuation (pulsation) inside the second liquid supply path 3B or the inside of the hydraulic pressure adjustment chamber 8 instead of supplying and blocking the liquid flow. Here, the reason why the hydraulic pressure adjusting valve 31B is provided in the present invention, in other words, the reason why the hydraulic pressure is generated in the conventional liquid supply path 3 will be described below. Further, Fig. 3 shows a state in which the hydraulic pressure adjusting chamber 8 is cut in the longitudinal direction.

亦即,透過液體供給路徑3從噴嘴24對晶圓W吐出處理液之後,在藉由開閉閥31A封閉液體供給路徑3的期間,在噴嘴24側,處理液因為慣性與重力而直接從該噴嘴24吐出。另外,噴嘴24的前端部,因為產生處理液的表面張力,使得處理液因為該表面張力而停留在噴嘴24的附近。因此,在以開閉閥31A封閉液體供給路徑3時,為了防止來自噴嘴24的剩餘滴液,如圖5所示,必須在液體供給路徑3內的開閉閥31A側的區域產生負壓,以抵抗該慣性、重力或是表面張力。具體而言,藉由使用隔膜5作為進行處理液之供給與遮斷的機構,可急遽的遮斷液體流動。 In other words, after the processing liquid is discharged from the nozzle 24 to the wafer W through the liquid supply path 3, while the liquid supply path 3 is closed by the opening and closing valve 31A, the processing liquid directly passes from the nozzle on the nozzle 24 side due to inertia and gravity. 24 spit out. Further, the front end portion of the nozzle 24 causes the treatment liquid to stay in the vicinity of the nozzle 24 due to the surface tension because the surface tension of the treatment liquid is generated. Therefore, when the liquid supply path 3 is closed by the opening and closing valve 31A, in order to prevent the remaining dripping from the nozzle 24, as shown in Fig. 5, it is necessary to generate a negative pressure in the region on the side of the opening and closing valve 31A in the liquid supply path 3 to resist This inertia, gravity or surface tension. Specifically, by using the diaphragm 5 as a mechanism for supplying and shutting off the treatment liquid, the liquid flow can be quickly interrupted.

因此,噴嘴24附近的處理液,因為被液體供給路徑3內之開閉閥31A側的區域所產生的負壓而吸引至該區域,故可抑制來自噴嘴24的滴液。然而,若液體供給路徑3內成為負壓,在未設有前述液壓調整閥31B之習知構成的情況中,如圖6所示,之後產生所謂的水錘,而使該區域成為正壓。 亦即,處理液因為液體供給路徑3內的負壓被吸引至開閉閥31A的期間,即使消除負壓程度的處理液到達該開閉閥31A側,噴嘴24側的處理液亦會因為慣性而直接流通至該開閉閥31A側。如此,若液體供給路徑3內成為正壓,則液體供給路徑3內的處理液,因為液體供給路徑3內的壓力而被壓出,而朝向噴嘴24側流通。因此,開閉閥31A附近的液體供給路徑3的內部成為負壓。如此,在開閉閥31A附近的位置,未設有液壓調整閥31B的情況中,於處理液的吐出停止之後,如圖7中以虛線所示,交互產生負壓與正壓,而產生所謂的液壓脈動(振動)。 Therefore, the processing liquid in the vicinity of the nozzle 24 is sucked into the region by the negative pressure generated in the region on the side of the opening and closing valve 31A in the liquid supply path 3, so that dripping from the nozzle 24 can be suppressed. However, when the inside of the liquid supply path 3 is a negative pressure, in the case where the conventional configuration of the hydraulic pressure adjusting valve 31B is not provided, as shown in FIG. 6, a so-called water hammer is generated, and this region is brought into a positive pressure. In other words, when the treatment liquid is sucked into the opening and closing valve 31A by the negative pressure in the liquid supply path 3, the treatment liquid on the nozzle 24 side is directly inertia due to the inertia. It flows to the side of the opening and closing valve 31A. When the inside of the liquid supply path 3 is a positive pressure, the processing liquid in the liquid supply path 3 is pushed out by the pressure in the liquid supply path 3, and flows toward the nozzle 24 side. Therefore, the inside of the liquid supply path 3 in the vicinity of the opening and closing valve 31A becomes a negative pressure. In the case where the hydraulic pressure adjusting valve 31B is not provided at a position near the opening and closing valve 31A, after the discharge of the processing liquid is stopped, as shown by a broken line in FIG. 7, the negative pressure and the positive pressure are alternately generated, and so-called Hydraulic pulsation (vibration).

液體供給路徑3的內部,在反覆脈動的期間,雖逐漸收束於某液壓,但開閉閥31A與噴嘴24之間的液體供給路徑3的長度尺寸越長,則脈動持續的時間也就越長。亦即,因為在液體供給路徑3內流動之處理液的容積越大,則在該液體供給路徑3內產生的液壓變動的程度(振幅)越大,故脈動難以收束。因此,如前所述,為了使集合噴嘴1共用於多個處理部11之間,而以使該集合噴嘴1可橫跨該等處理部11移動的方式構成,在習知構成的情況中,液壓的脈動難以收束。 The inside of the liquid supply path 3 is gradually converged to a certain hydraulic pressure during the period of the reverse pulsation, but the longer the length of the liquid supply path 3 between the opening and closing valve 31A and the nozzle 24, the longer the pulsation lasts. . In other words, the larger the volume of the treatment liquid flowing in the liquid supply path 3, the larger the degree (amplitude) of the hydraulic pressure fluctuation generated in the liquid supply path 3, and the pulsation is hard to be converged. Therefore, as described above, in order to allow the collective nozzle 1 to be used in common between the plurality of processing units 11, the collective nozzle 1 can be configured to move across the processing units 11, and in the case of the conventional configuration, Hydraulic pulsations are difficult to close.

如此,若產生液壓的脈動,噴嘴24內部的液面下降太多的情況,從噴嘴24吐出多餘的處理液,而形成噴嘴24汙染的原因,或是導致晶圓W的良率下降。更進一步,噴嘴24內部的液面若因為液壓的脈動而上升,則氣泡可能捲入噴嘴24內。 As described above, when the hydraulic pulsation occurs, the liquid level inside the nozzle 24 drops too much, and excess processing liquid is discharged from the nozzle 24, which causes contamination of the nozzle 24 or causes a decrease in the yield of the wafer W. Further, if the liquid level inside the nozzle 24 rises due to the pulsation of the hydraulic pressure, the air bubbles may be caught in the nozzle 24.

另外,液體供給路徑3內的液壓若不下降至某範圍內,則難以使後述的回吸閥31C動作。亦即,若在液壓下降之前,使回吸閥31C動作,則例如,會增加水錘現象的幅度。換言之,若液體供給路徑3內產生液壓的脈動,則在後續對晶圓W進行吐出處理時,必須設定至該脈動平靜為止的某程度的待機時間。因此,該待機時間的部分,導致了產率的降低。 Further, if the hydraulic pressure in the liquid supply path 3 does not fall within a certain range, it is difficult to operate the suction valve 31C to be described later. That is, if the suckback valve 31C is operated before the hydraulic pressure is lowered, for example, the magnitude of the water hammer phenomenon is increased. In other words, when a hydraulic pulsation occurs in the liquid supply path 3, it is necessary to set a certain waiting time until the pulsation is calm when the discharge processing is performed on the wafer W. Therefore, part of this standby time results in a decrease in yield.

於是,本發明中,設置液壓調整閥31B,以作為所謂「用於吸收振動的閥」,來抑制該脈動。關於該液壓調整閥31B的作用,一併與光阻塗布 裝置的作用在後段中說明,若簡單說明,在液體供給路徑3內液壓欲增加時,如圖7中以實線所示,使隔膜6動作以抵銷該液壓的增加。 Then, in the present invention, the hydraulic pressure adjusting valve 31B is provided as a so-called "valve for absorbing vibration" to suppress the pulsation. Regarding the function of the hydraulic pressure regulating valve 31B, together with the photoresist coating The function of the apparatus is explained in the following paragraph. As will be briefly explained, when the hydraulic pressure is to be increased in the liquid supply path 3, as shown by the solid line in Fig. 7, the diaphragm 6 is actuated to offset the increase in the hydraulic pressure.

接著,回到液體供給控制部4的說明。回吸閥31C中的隔膜7,形成回吸用的吸引機構。亦即,該隔膜7,係在來自噴嘴24的處理液吐出結束之後,到下一次的吐出作業之前,例如,為了抑制噴嘴24前端的處理液乾燥,而將該噴嘴24內的處理液略微朝上方側(液體供給源2側)吸引的構件。具體而言,在進行回吸動作時,藉由使隔膜7上升,將與該隔膜7接觸的處理液吸引至該隔膜7側,如此,可使噴嘴24內的液面略微上升。 Next, the description returns to the liquid supply control unit 4. The diaphragm 7 in the suckback valve 31C forms a suction mechanism for suckback. In other words, after the discharge of the treatment liquid from the nozzle 24 is completed, before the next discharge operation, for example, in order to suppress the drying of the treatment liquid at the tip end of the nozzle 24, the treatment liquid in the nozzle 24 is slightly turned toward A member that is attracted to the upper side (the liquid supply source 2 side). Specifically, when the suction operation is performed, the treatment liquid that is in contact with the diaphragm 7 is sucked to the side of the diaphragm 7 by raising the diaphragm 7, so that the liquid level in the nozzle 24 can be slightly raised.

該光阻塗布裝置中,如前述的圖2所示,為了在晶圓W的表面形成光阻膜,而設置對裝置整體輸出控制信號的控制部41。該控制部41具備以「從各噴嘴24開始吐出處理液,在經過既定時間之後,結束處理液的吐出」之方式所構成的程式,具體而言,係以控制各閥36的開閉及流量調整部37中的空氣流量,並實施以下說明的光阻液之吐出處理的方式所構成。閥36開閉的時間點,係根據例如預先進行的實驗所設定。 In the photoresist coating apparatus, as shown in FIG. 2 described above, in order to form a photoresist film on the surface of the wafer W, a control unit 41 that outputs a control signal to the entire apparatus is provided. The control unit 41 includes a program that "discharges the processing liquid from each of the nozzles 24 and ends the discharge of the processing liquid after a predetermined period of time has elapsed", and specifically controls the opening and closing of the valves 36 and the flow rate adjustment. The air flow rate in the portion 37 is configured to perform the discharge processing of the photoresist liquid described below. The time point at which the valve 36 is opened and closed is set based on, for example, an experiment performed in advance.

接著,以下參照圖8~圖11,一併說明液體供給裝置的作用,以及光阻塗布裝置的作用。首先,從噴嘴24對於被吸附保持在旋轉夾頭12上並繞著垂直軸旋轉的晶圓W的中央部開始吐出處理液(稀釋液或光阻液)(T1)。具體而言,如圖8所示,使開閉閥31A中的隔膜5上升至開放位置(OFF)。另外,在使液壓調整閥31B的隔膜6朝向第2液體供給路徑3B側前進(ON)的同時,使回吸閥31C的隔膜7移動至下方位置(ON)。 Next, the action of the liquid supply device and the action of the photoresist coating device will be described below with reference to Figs. 8 to 11 . First, the processing liquid (diluent or photoresist) (T1) is discharged from the nozzle 24 to the central portion of the wafer W that is adsorbed and held by the rotary chuck 12 and rotated about the vertical axis. Specifically, as shown in FIG. 8, the diaphragm 5 in the opening and closing valve 31A is raised to the open position (OFF). In addition, while the diaphragm 6 of the hydraulic pressure adjusting valve 31B is advanced (ON) toward the second liquid supply path 3B side, the diaphragm 7 of the suckback valve 31C is moved to the lower position (ON).

液體供給源2的處理液,藉由從送液用流路25流入該液體供給源2的空氣的壓力,透過液體供給控制部4,流通經過液體供給路徑3A、3B內,從噴嘴24往晶圓W的中央部吐出。如此,液膜從晶圓W的中央部朝向外緣側展開,之後,在該晶圓W的整個表面形成液膜。又,前述的圖4中,一併描繪各隔膜5~7的動作(ON、OFF),以及液體供給路徑3內部的液壓(高、低),另外亦一併描繪習知回吸用的隔膜的動作及液壓的變動(虛線)。 The treatment liquid of the liquid supply source 2 passes through the liquid supply control unit 4 through the pressure of the air flowing into the liquid supply source 2 from the liquid supply flow path 25, flows through the liquid supply paths 3A and 3B, and flows from the nozzle 24 to the crystal. The center of the circle W is spit out. In this manner, the liquid film is developed from the central portion of the wafer W toward the outer edge side, and thereafter, a liquid film is formed on the entire surface of the wafer W. In addition, in the above-mentioned FIG. 4, the operation (ON, OFF) of each of the diaphragms 5 to 7 and the hydraulic pressure (high and low) inside the liquid supply path 3 are also shown, and the conventional diaphragm for suckback is also depicted. Movement and hydraulic pressure changes (dashed line).

接著,如圖9所示,藉由使開閉閥31A的隔膜5下降(ON),結束處理液的吐出(T2)。此處,在藉由隔膜5封閉液體供給路徑3時,如前所述,於該液體供給路徑3的內部產生負壓。因此,液體供給路徑3的內部,如圖10所示,因為處理液被該負壓吸引至開閉閥31A側,故如圖4所示,液體供給路徑3內的液壓開始上升。換言之,在常壓下,液體供給路徑3內於該附近位置難以容納之程度容積的處理液,朝向開閉閥31A的附近位置前進。 Next, as shown in FIG. 9, the diaphragm 5 of the opening and closing valve 31A is lowered (ON), and the discharge of the treatment liquid (T2) is ended. Here, when the liquid supply path 3 is closed by the diaphragm 5, a negative pressure is generated inside the liquid supply path 3 as described above. Therefore, as shown in FIG. 10, the inside of the liquid supply path 3 is sucked by the negative pressure to the opening and closing valve 31A side, and as shown in FIG. 4, the hydraulic pressure in the liquid supply path 3 starts to rise. In other words, at a normal pressure, the processing liquid having a volume that is difficult to accommodate in the vicinity of the liquid supply path 3 advances toward the vicinity of the opening and closing valve 31A.

於是,本發明中,像這樣液體供給路徑3內的液壓欲上升時(表示第2液體供給路徑3B內之液壓變動的曲線形成往下凸出的波峰時,參照圖4),如圖10所示,使液壓調整閥31B的隔膜6後退(T3)。亦即,在開閉閥31A封閉後,在經過預先設定的設定時間之後,以抵消液體供給路徑3的內部所產生之液壓的波形的方式,使液壓調整閥31B的隔膜6運作。因此,在開閉閥31A附近的位置,容納處理液的容積增加;另外,再配合該隔膜6相對於從第2液體供給路徑3B中往液壓調整閥31B流通之處理液的方向後退的方向,如圖4所示,在第2液體供給路徑3B的內部,液壓迅速穩定至常壓的程度。具體而言,液體供給路徑3的內部,無論液壓未成為正壓或是形成正壓,皆可將其抑制在難以引起液壓脈動的程度。 Therefore, in the present invention, when the hydraulic pressure in the liquid supply path 3 is to be increased (when the curve indicating the hydraulic pressure fluctuation in the second liquid supply path 3B forms a peak that protrudes downward, see FIG. 4), as shown in FIG. It is shown that the diaphragm 6 of the hydraulic pressure adjusting valve 31B is moved backward (T3). In other words, after the opening and closing valve 31A is closed, the diaphragm 6 of the hydraulic pressure adjusting valve 31B is operated to cancel the waveform of the hydraulic pressure generated inside the liquid supply path 3 after a predetermined set time has elapsed. Therefore, the volume of the processing liquid is increased at a position near the opening and closing valve 31A, and the direction in which the diaphragm 6 is retracted with respect to the direction of the processing liquid flowing from the second liquid supply path 3B to the hydraulic pressure adjusting valve 31B is as follows. As shown in Fig. 4, in the second liquid supply path 3B, the hydraulic pressure is rapidly stabilized to a normal pressure. Specifically, the inside of the liquid supply path 3 can be suppressed to such an extent that it is difficult to cause hydraulic pulsation regardless of whether the hydraulic pressure is not positive pressure or positive pressure is formed.

因此,可抑制從噴嘴24吐出多餘的處理液,或是氣泡捲入噴嘴24內(之後對於晶圓W的處理液的吐出不良),更可抑制不必要的處理液消耗。在處理液為光阻液的情況中,可抑制噴嘴24被該多餘的處理液汙染,及抑制光阻膜的膜厚不良(良率低落)。 Therefore, it is possible to suppress the unnecessary processing liquid from being discharged from the nozzles 24, or to cause the air bubbles to be caught in the nozzles 24 (the subsequent discharge failure of the processing liquid for the wafer W), and it is possible to suppress unnecessary processing liquid consumption. When the treatment liquid is a photoresist liquid, it is possible to suppress contamination of the nozzle 24 by the excess treatment liquid and to suppress a film thickness defect of the photoresist film (low yield).

之後,如圖11所示,使回吸閥31C的隔膜7上升,藉由將噴嘴24內的處理液吸引至上方側,結束回吸動作(T4)。進行該回吸動作的時間點,若參照圖4,比較本發明(T4)與習知技術(T5),習知技術(未設置液壓調整閥31B的構成)中,如前所述,必須設置到第2液體供給路徑3B內之液壓的脈動收束為止的待機時間。因此,習知技術中,在處理液的吐出結束之後到進 行回吸動作之前的期間,產生較大的時間延遲(Time Lag)。 Thereafter, as shown in FIG. 11, the diaphragm 7 of the suck-back valve 31C is raised, and the processing liquid in the nozzle 24 is sucked to the upper side, and the suckback operation (T4) is ended. When the suckback operation is performed, the present invention (T4) and the conventional technique (T5) are compared with reference to Fig. 4. In the conventional technique (the configuration in which the hydraulic pressure adjusting valve 31B is not provided), as described above, it is necessary to set The standby time until the pulsation of the hydraulic pressure in the second liquid supply path 3B is converged. Therefore, in the prior art, after the discharge of the treatment liquid is finished, it is advanced. A period of time before the line suckback action produces a large time delay (Time Lag).

另一方面,本發明中,在液壓調整閥31B中的隔膜6開始後退動作之後,第2液體供給路徑3B內的液壓迅速穩定至常壓。因此,在液壓調整閥31B中的隔膜6結束後退動作之後,迅速開始回吸動作。此處,係預先以實驗等測定第2液體供給路徑3B內的液壓穩定所需的時間,並根據該測定結果,設定使回吸閥31C的隔膜6動作的時間點。 On the other hand, in the present invention, after the diaphragm 6 in the hydraulic pressure adjusting valve 31B starts the retracting operation, the hydraulic pressure in the second liquid supply path 3B is quickly stabilized to the normal pressure. Therefore, after the diaphragm 6 in the hydraulic pressure adjusting valve 31B ends the retracting operation, the suckback operation is quickly started. Here, the time required for the hydraulic pressure in the second liquid supply path 3B to be stabilized is measured in advance by an experiment or the like, and the time at which the diaphragm 6 of the suckback valve 31C is operated is set based on the measurement result.

又,第2液體供給路徑3B中,設有測定處理液壓力的測定部,亦可在該測定部中的測定結果下降至某範圍內時,使回吸閥31C動作。又,在從噴嘴24吐出處理液時,依序對晶圓W供給稀釋液及光阻液,同時在該等稀釋液及光阻液的吐出停止時,分別使前述的液壓調整閥31B及回吸閥31C中的隔膜6、7動作;上例中,省略對於稀釋液及光阻液的各別說明。 Further, the second liquid supply path 3B is provided with a measurement unit that measures the pressure of the treatment liquid, and when the measurement result in the measurement unit falls within a certain range, the suction valve 31C may be operated. When the processing liquid is discharged from the nozzles 24, the dilution liquid and the photoresist liquid are sequentially supplied to the wafer W, and when the discharge of the diluent liquid and the photoresist liquid is stopped, the hydraulic pressure regulating valve 31B and the above-described hydraulic pressure regulating valve 31B are respectively returned. The diaphragms 6 and 7 in the suction valve 31C operate; in the above example, the respective descriptions of the diluent and the photoresist are omitted.

根據上述的實施態樣,液體供給源2與噴嘴24之間的第1液體供給路徑3A與第2液體供給路徑3B,係在設有液壓調整閥31B的液壓調整室8,以形成相互交叉之方向的方式連接。接著,關於液壓調整閥31B的隔膜6,係以與第2液體供給路徑3B的上游端對向的方式配置,並以沿著第2液體供給路徑3B的延伸方向自由進退的方式構成。因此,在停止處理液的吐出時,即使液體供給路徑3內的液壓脈動,亦可藉由以抵消該脈動的方式使液壓調整閥31B後退,來抑制該脈動,故可抑制在處理液的吐出結束後來自噴嘴24的滴液。因此,可抑制光阻膜的膜厚不良。另外,可抑制氣泡捲入噴嘴24中。更進一步,在設置回吸閥31C的情況中,因為可在對一片晶圓W的吐出處理結束之後,馬上進行回吸動作,故可迅速開始對後續的其他晶圓W進行吐出處理。 According to the above-described embodiment, the first liquid supply path 3A and the second liquid supply path 3B between the liquid supply source 2 and the nozzle 24 are connected to the hydraulic pressure adjustment chamber 8 provided with the hydraulic pressure adjustment valve 31B so as to form a mutual intersection. Directional connection. Then, the diaphragm 6 of the hydraulic pressure adjusting valve 31B is disposed to face the upstream end of the second liquid supply path 3B, and is configured to be freely advanced and retracted along the extending direction of the second liquid supply path 3B. Therefore, when the discharge of the treatment liquid is stopped, even if the hydraulic pressure in the liquid supply path 3 is pulsated, the hydraulic pressure adjustment valve 31B can be retracted so as to cancel the pulsation, thereby suppressing the pulsation, so that the discharge of the treatment liquid can be suppressed. The drip from the nozzle 24 after the end. Therefore, the film thickness of the photoresist film can be suppressed. In addition, it is possible to suppress the bubble from being caught in the nozzle 24. Further, in the case where the suck-back valve 31C is provided, since the suck-back operation can be performed immediately after the discharge processing for one wafer W is completed, the discharge processing for the subsequent other wafers W can be quickly started.

以下列舉上述說明之液壓調整閥31B的其他實施例。圖12係顯示劃分壁51與支持部52的一例;劃分壁51由樹脂所構成,其在液壓調整閥31B中的隔膜6進退的期間,劃分出該隔膜6以及流入口33、排出口34所連通之區域,而支持部52為汽缸等構件,其連接該劃分壁51與隔膜6。此例中係如下所述之構成:若使空氣流入該區域,則劃分壁51朝向第2液體供給 路徑3B側膨張,而使隔膜6朝向該第2液體供給路徑3B前進。 Other embodiments of the hydraulic pressure regulating valve 31B described above are listed below. 12 shows an example of the partition wall 51 and the support portion 52. The partition wall 51 is made of resin, and the diaphragm 6, the inflow port 33, and the discharge port 34 are defined while the diaphragm 6 in the hydraulic pressure adjusting valve 31B is advanced and retracted. The communication portion 52 is a member such as a cylinder that connects the partition wall 51 and the diaphragm 6. In this example, the configuration is as follows: if air is caused to flow into the region, the partition wall 51 is directed toward the second liquid supply. The path 3B side is expanded, and the diaphragm 6 is advanced toward the second liquid supply path 3B.

另外,圖13係顯示在液壓調整室8內配置驅動部53及進退軸54的一例;該驅動部53由馬達所形成,其使液壓調整閥31B的隔膜6進退,而進退軸54,則為藉由該驅動部53在第2液體供給路徑3B的延伸方向上自由進退的構成。該隔膜6,安裝於該進退軸54的前端部。此例中,隔膜6亦因應進退軸54的動作進退。 13 is a view showing an example in which the driving portion 53 and the advancing and retracting shaft 54 are disposed in the hydraulic pressure adjusting chamber 8. The driving portion 53 is formed by a motor that advances and retracts the diaphragm 6 of the hydraulic pressure adjusting valve 31B, and the advancing and retracting shaft 54 is The drive unit 53 is configured to advance and retreat freely in the extending direction of the second liquid supply path 3B. The diaphragm 6 is attached to the front end portion of the advancing and retracting shaft 54. In this example, the diaphragm 6 also advances and retreats in response to the action of the advancing and retracting shaft 54.

圖14係顯示,設置壓電元件55作為可動壁部,以代替液壓調整閥31B中的隔膜6的一例。具體而言,壓電元件55,具備例如,水晶等的壓電基板56,以及形成於該壓電基板56之左右兩面的一對電極膜57。接著,僅以極短的時間,從成為驅動部的高頻電源部59對電極膜57施加脈衝狀的高頻電力,則引起壓電基板56的彎曲振動,可得到與前述的例子相同的作用效果。圖14中,58係支持部,用以支持壓電元件55,並氣密的阻塞該壓電元件55的外緣部與液壓調整室8的內壁面之間。 Fig. 14 shows an example in which the piezoelectric element 55 is provided as a movable wall portion instead of the diaphragm 6 in the hydraulic pressure adjusting valve 31B. Specifically, the piezoelectric element 55 includes, for example, a piezoelectric substrate 56 such as quartz crystal, and a pair of electrode films 57 formed on the left and right surfaces of the piezoelectric substrate 56. Then, when the pulsed high-frequency power is applied to the electrode film 57 from the high-frequency power supply unit 59 serving as the drive unit in a very short time, the bending vibration of the piezoelectric substrate 56 is caused, and the same effect as the above-described example can be obtained. effect. In Fig. 14, a 58-series support portion supports the piezoelectric element 55 and hermetically blocks the outer edge portion of the piezoelectric element 55 from the inner wall surface of the hydraulic pressure adjustment chamber 8.

另外,圖15係顯示配置圓板狀磁石61,以代替液壓調整閥31B的隔膜6的一例。該磁石61係以下述方式所配置:以使S極與N極之磁極中的一方的磁極朝向第2液體供給路徑3B側的方式(對向的方式),被支持部62支持於液壓調整室8的內壁面,並氣密地劃分該液壓調整室8的內部區域與在液體供給路徑3內流動的液體。在該內部區域中,具有如下所述之構成:以與磁石61對向的方式配置電磁石63以作為驅動部,藉由切換設於直流電源部64之間的開關65,可變更該磁石61側中的磁極。因此,此例亦以下述方式構成:藉由切換電磁石63中的磁石61側的磁極,使磁石61相對於第2液體供給路徑3B進退。 In addition, FIG. 15 shows an example of the diaphragm 6 in which the disk-shaped magnet 61 is disposed instead of the hydraulic pressure adjusting valve 31B. The magnet 61 is disposed such that the magnetic pole of one of the magnetic poles of the S pole and the N pole faces the second liquid supply path 3B side (opposing manner), and the support portion 62 supports the hydraulic pressure adjustment chamber. The inner wall surface of the airtight chamber 8 and the inner region of the hydraulic pressure adjustment chamber 8 and the liquid flowing in the liquid supply path 3 are hermetically divided. In the internal region, the electromagnetic stone 63 is disposed as a driving portion so as to face the magnet 61, and the magnet 61 can be changed by switching the switch 65 provided between the DC power supply units 64. The magnetic pole in the middle. Therefore, in this example, the magnet 61 is moved forward and backward with respect to the second liquid supply path 3B by switching the magnetic pole on the side of the magnet 61 in the electromagnet 63.

圖16係顯示,在第1液體供給路徑3A中的管壁的一部分上氣密地設置樹脂所形成的薄膜71作為可動壁部,以代替設置液壓調整閥31B的隔膜6的一例。亦即,可說是在第1液體供給路徑3A的壁面部設置隔膜6。此例中,第1液體供給路徑3A與第2液體供給路徑3B互相直接連接。接著, 薄膜71,配置於第2液體供給路徑3B中,與第1液體供給路徑3A側的前端部對向的位置。因此,第1液體供給路徑3A中的第2液體供給路徑3B側的部位,成為液壓調整室8。 FIG. 16 shows an example in which the film 71 formed of a resin is airtightly disposed on a part of the pipe wall in the first liquid supply path 3A as a movable wall portion instead of the diaphragm 6 in which the hydraulic pressure adjusting valve 31B is provided. In other words, it can be said that the separator 6 is provided on the wall surface portion of the first liquid supply path 3A. In this example, the first liquid supply path 3A and the second liquid supply path 3B are directly connected to each other. then, The film 71 is disposed at a position facing the front end portion on the first liquid supply path 3A side in the second liquid supply path 3B. Therefore, the portion on the second liquid supply path 3B side of the first liquid supply path 3A serves as the hydraulic pressure adjustment chamber 8.

另外,薄膜71的背面側(與第2液體供給路徑3B的相反側),設有使該薄膜71進退的機構,具體而言,配置有與前述之圖13的構成相同的驅動部72及進退軸73。其係如下述之構成:進退軸73的前端部安裝於薄膜71上,藉由使驅動部72驅動,使薄膜71的中央部進退。 Further, the back side of the film 71 (opposite to the second liquid supply path 3B) is provided with a mechanism for advancing and retracting the film 71. Specifically, the drive unit 72 having the same configuration as that of the above-described FIG. 13 and the advance and retreat are disposed. Axis 73. The front end portion of the advancing and retracting shaft 73 is attached to the film 71, and the central portion of the film 71 is advanced and retracted by driving the driving portion 72.

以上的各例中,作為液壓調整閥31B中的隔膜6開始後退動作的時間點,宜為圖4之中的下述兩個時間點之間(反曲點彼此之間):該液體供給路徑3內的液壓因為液體供給路徑3的封閉而降低之後,該液壓即將上升的時間點(谷),以及該液壓上升後即將開始下降的時間點(峰)。另外,如前所述,在依序產生由液壓中的谷或峰所形成之反曲點(產生液壓的脈動)的情況中,雖將該時間點設定在液體供給路徑3封閉之後最先產生之液壓的谷與峰之間,但亦可設定於液壓中第二次以後所產生的谷與峰之間。圖17,如此例所示,係顯示在該液壓中第二次產生谷時,使液壓調整閥31B中的隔膜6開始後退動作的一例。 In each of the above examples, the time point at which the diaphragm 6 in the hydraulic pressure adjusting valve 31B starts to retreat is preferably between the following two time points in FIG. 4 (between the inflection points): the liquid supply path The time point (valley) at which the hydraulic pressure in 3 is lowered due to the closing of the liquid supply path 3, and the time (peak) at which the hydraulic pressure is about to start to rise. Further, as described above, in the case where the inflection point (the pulsation of the hydraulic pressure) formed by the valley or the peak in the hydraulic pressure is sequentially generated, the time point is set to be generated first after the liquid supply path 3 is closed. Between the valley and the peak of the hydraulic pressure, but it can also be set between the valley and the peak generated after the second time in the hydraulic pressure. Fig. 17 shows an example in which the diaphragm 6 in the hydraulic pressure adjusting valve 31B is started to retreat when the valley is generated for the second time in the hydraulic pressure.

以上雖說明將液體供給控制部4設於集合噴嘴1之一例,但亦可將其設於各處理部11中所設置的用以吐出稀釋液的輔助噴嘴15,或是亦可將其設於用以形成含矽(Si)之有機系的塗布膜的噴嘴(圖中未顯示)。 Although the liquid supply control unit 4 is provided as an example of the collecting nozzle 1 in the above, the auxiliary nozzle 15 for discharging the diluent may be provided in each processing unit 11, or it may be provided in A nozzle (not shown) for forming a coating film of an organic system containing cerium (Si).

1‧‧‧集合噴嘴 1‧‧‧Collection nozzle

3A‧‧‧第1液體供給路徑 3A‧‧‧1st liquid supply path

3B‧‧‧第2液體供給路徑 3B‧‧‧Second liquid supply path

4‧‧‧液供給控制部 4‧‧‧Liquid Supply Control Department

5~7‧‧‧隔膜 5~7‧‧‧Separator

8‧‧‧液壓調整室 8‧‧‧Hydraulic adjustment room

23‧‧‧噴頭 23‧‧‧Spray

24‧‧‧噴嘴 24‧‧‧Nozzles

26‧‧‧固定部 26‧‧‧ Fixed Department

31A‧‧‧開閉閥 31A‧‧‧Opening and closing valve

31B‧‧‧液壓調整閥 31B‧‧‧Hydraulic adjustment valve

31C‧‧‧回吸閥 31C‧‧‧Retraction valve

33‧‧‧流入口 33‧‧‧Inlet

34‧‧‧排出口 34‧‧‧Export

36‧‧‧閥 36‧‧‧Valves

37‧‧‧流量調整部 37‧‧‧Flow Adjustment Department

38‧‧‧儲存部 38‧‧‧ Storage Department

41‧‧‧控制部 41‧‧‧Control Department

Claims (5)

一種液體供給裝置,用以將處理液從噴嘴供給至被處理體,其特徵為包含:第1液體供給路徑,其相當於具有彎曲部位的流路之中該彎曲部位的上游側,且其上游端與該處理液的液體供給源連接;閥,插設於該第1液體供給路徑中,用以進行處理液的供給與遮斷;第2液體供給路徑,其相當於該流路之中該彎曲部位的下游側,且其下游端設有噴嘴;用於吸收振動的可動壁部,構成接近該彎曲部位的壁部,可自由進退;驅動部,在該閥關閉時,處理液被壓出至該噴嘴側後,被吸回至該閥側時,使該用於吸收振動的可動壁部後退;以及吸引機構,設在該第2液體供給路徑的下游側,用以在來自該噴嘴的液體之吐出結束且該用於吸收振動的可動壁部後退後,吸入該噴嘴內的處理液的液面。 A liquid supply device for supplying a processing liquid from a nozzle to a target object, comprising: a first liquid supply path corresponding to an upstream side of the curved portion among the flow paths having a curved portion, and upstream thereof The end is connected to the liquid supply source of the processing liquid; the valve is inserted into the first liquid supply path for supplying and blocking the processing liquid; and the second liquid supply path corresponds to the flow path. a downstream side of the curved portion, and a nozzle at a downstream end thereof; a movable wall portion for absorbing vibration, forming a wall portion close to the curved portion, freely advancing and retracting; and a driving portion, when the valve is closed, the treatment liquid is pressed out When the nozzle side is sucked back to the valve side, the movable wall portion for absorbing vibration is retracted, and the suction mechanism is provided on the downstream side of the second liquid supply path for the nozzle from the nozzle. After the discharge of the liquid is completed and the movable wall portion for absorbing vibration is receded, the liquid level of the treatment liquid in the nozzle is sucked. 如申請專利範圍第1項之液體供給裝置,其中更包含:控制部,控制該驅動部。 The liquid supply device of claim 1, further comprising: a control unit that controls the drive unit. 如申請專利範圍第2項之液體供給裝置,其中,該控制部輸出控制信號,俾於該閥關閉之後,在經過設定時間後使該用於吸收振動的可動壁部後退。 The liquid supply device of claim 2, wherein the control unit outputs a control signal to retract the movable wall portion for absorbing vibration after a set time elapses after the valve is closed. 如申請專利範圍第2或3項之液體供給裝置,其中,該控制部輸出控制信號,俾於該閥開啟的同時或是正在開啟時,使該用於吸收振動的可動壁部前進。 A liquid supply device according to claim 2, wherein the control unit outputs a control signal for advancing the movable wall portion for absorbing vibration while the valve is being opened or being opened. 如申請專利範圍第1至3項中任一項之液體供給裝置,其中,該用於吸收振動的可動壁部係由隔膜所構成。 The liquid supply device according to any one of claims 1 to 3, wherein the movable wall portion for absorbing vibration is constituted by a diaphragm.
TW103106567A 2013-03-01 2014-02-26 Liquid supply device TWI538743B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013040814A JP5853971B2 (en) 2013-03-01 2013-03-01 Liquid supply device

Publications (2)

Publication Number Publication Date
TW201440897A TW201440897A (en) 2014-11-01
TWI538743B true TWI538743B (en) 2016-06-21

Family

ID=51691579

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103106567A TWI538743B (en) 2013-03-01 2014-02-26 Liquid supply device

Country Status (3)

Country Link
JP (1) JP5853971B2 (en)
KR (1) KR101998894B1 (en)
TW (1) TWI538743B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6319117B2 (en) * 2015-01-26 2018-05-09 東京エレクトロン株式会社 Treatment liquid supply apparatus, treatment liquid supply method, and storage medium
JP6512894B2 (en) * 2015-03-27 2019-05-15 株式会社Screenホールディングス Treatment liquid supply apparatus and control method of treatment liquid supply apparatus
JP6925872B2 (en) * 2017-05-31 2021-08-25 東京エレクトロン株式会社 Substrate liquid processing equipment, processing liquid supply method and storage medium
CN110159928B (en) * 2018-02-13 2021-04-20 辛耘企业股份有限公司 Fluid control device
JP6789271B2 (en) * 2018-09-18 2020-11-25 株式会社Screenホールディングス Board processing equipment

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03115267U (en) * 1990-03-09 1991-11-28
JP2766253B2 (en) * 1996-06-27 1998-06-18 山形日本電気株式会社 Liquid flow stabilizer
JPH1133471A (en) * 1997-07-23 1999-02-09 Tokyo Electron Ltd Coating apparatus
JP3490320B2 (en) 1999-02-02 2004-01-26 東京エレクトロン株式会社 Coating film forming method and coating processing apparatus
JP3990567B2 (en) * 2001-12-18 2007-10-17 大日本スクリーン製造株式会社 Diaphragm valve, substrate processing unit and substrate processing apparatus
JP4668027B2 (en) * 2005-10-17 2011-04-13 シーケーディ株式会社 Chemical supply system
JP5045741B2 (en) * 2009-12-25 2012-10-10 東京エレクトロン株式会社 Chemical supply nozzle and chemical supply method

Also Published As

Publication number Publication date
KR20140109258A (en) 2014-09-15
JP5853971B2 (en) 2016-02-09
TW201440897A (en) 2014-11-01
KR101998894B1 (en) 2019-07-10
JP2014168734A (en) 2014-09-18

Similar Documents

Publication Publication Date Title
TWI538743B (en) Liquid supply device
JP6512894B2 (en) Treatment liquid supply apparatus and control method of treatment liquid supply apparatus
JP7111875B2 (en) Substrate processing equipment
KR20150034644A (en) Substrate treatment method and substrate treatment apparatus
TWI645450B (en) Treatment liquid supply device, treatment liquid supply method and recording medium
KR102328464B1 (en) Substrate processing method and substrate processing apparatus
WO2011102201A1 (en) Application method and application device
KR20160031393A (en) Substrate cleaning method and substrate cleaning apparatus
KR102394235B1 (en) Method and apparatus for liquid treatment of wafer shaped articles
TW202013561A (en) Substrate processing device and substrate processing method
JP6624599B2 (en) Substrate processing apparatus and processing liquid discharge method
KR102627121B1 (en) Nozzle waiting apparatus, liquid processing apparatus and method for operating liquid processing apparatus and storage medium
JP4447331B2 (en) Substrate processing apparatus and substrate processing method
JP6576217B2 (en) Treatment liquid supply apparatus and control method of treatment liquid supply apparatus
TWI662649B (en) Substrate processing device and substrate processing method
JP2007258565A (en) Substrate processing method and substrate processing apparatus
US20190252215A1 (en) Apparatus and method for cleaning semiconductor wafers
JP4347734B2 (en) Substrate processing equipment
KR101597236B1 (en) Apparatus for protecting dispenser condensation and method for operating the same
JP4813430B2 (en) Substrate cleaning apparatus, substrate cleaning method, and recording medium
TWI615208B (en) Water jet, substrate processing device and substrate processing method
JP2013107041A (en) Device for removing foreign matter
WO2018056067A1 (en) Substrate processing device and substrate processing method
KR20100026823A (en) Flow control device of fluid for di rinse
KR20120029967A (en) Preparatory photoresist discharging device for substrate coater apparatus and substrate coating method using same