TWI536759B - Antenna device and communication device - Google Patents

Description

Antenna device and communication device

The present invention relates to an antenna device that utilizes a predetermined communication wavelength and performs information communication by electromagnetic field coupling between a pair of electrodes, and a communication device incorporating the antenna device.

The present application claims priority on the basis of Japanese Patent Application No. 2010-206930, filed on Sep. 15, 2010, and Japanese Patent Application No. 2010-206. Used in this application.

In recent years, a system has been developed for wirelessly transmitting music, images, and the like between electronic devices such as computers or small portable terminals without using cables or media. In such a wireless transmission system, it is possible to perform high-speed transmission of a maximum of 560 Mbps at a short distance of several cm. In such a high-speed transmission system, TransferJet (registered trademark) has the advantage that the communication distance is short, but the possibility of eavesdropping is low and the transmission speed is fast.

TransferJet (registered trademark) is a kind of electromagnetic field coupled by a high-frequency coupler corresponding to a super close distance, and its signal quality depends on the performance of the high-frequency coupler. For example, as shown in FIG. 21, the high-frequency coupler described in Patent Document 1 includes a printed circuit board 201 having a ground 202 formed on one surface and a microstrip structure formed on the other surface of the printed circuit board 201. (stub) 203, a coupling electrode 208, and a metal wire 207 connecting the coupling electrode 208 and a stub 203. Further, in the high-frequency coupler described in Patent Document 1, a transmission/reception circuit 205 is also formed on the printed circuit board 201. Further, in Patent Document 1, as a modification in which the transmission/reception circuit 205 is not formed on the printed circuit board 201, a printed circuit board 201 having a ground 202 formed on one surface as shown in FIG. 22 and formed on the printed circuit board is described. A stub 203 of a microstrip structure on the other side of 201, a coupling electrode 208, and a metal line 207 connecting the coupling electrode 208 and a stub 203.

Patent Document 1: Japanese Laid-Open Patent Publication No. 2008-311816

However, as shown in FIG. 21, in the high-frequency coupler described in Patent Document 1, in order to perform good communication, it is necessary to enlarge the area of the plate-shaped coupling electrode 208. This is because the coupling electrode 208 must be enlarged for a certain length depending on the communication wavelength and for enhancing the coupling strength. Further, since the metal wire 207 is required to connect the coupling electrode 208 and the wire 203 at a predetermined position, the alignment accuracy and the like are required to be produced, and a problem in the process is caused.

The present invention has been made in view of such circumstances, and it is an object of the present invention to provide an antenna device which can achieve both good communication characteristics and mechanical strength, and also has a structure advantageous for miniaturization of a coupling electrode. Further, the present invention is directed to providing a communication device in which the antenna device is assembled.

As an means for solving the above-described problems, the antenna device of the present invention is configured to perform information communication by electromagnetic field coupling between a pair of electrodes by a predetermined communication wavelength, and is characterized in that: the coupling electrode is formed in a dielectric The body substrate is coupled to the electrode electromagnetic field of the other antenna device for communication; the coupling electrode is composed of a first wire composed of a half of a communication wavelength and a conductor electrically connected to the first wire; The central portion of the wiring and the conductor are formed at positions facing the thickness direction of the dielectric substrate, and are electromagnetically coupled to the electrodes of other antenna devices disposed on the extension of the central portion of the first wiring and the conductor.

Further, the communication device of the present invention is configured to perform information communication by electromagnetic field coupling between a pair of electrodes by a predetermined communication wavelength, and is characterized in that the coupling electrode is formed on a dielectric substrate and is connected to other antennas. The electrode electromagnetic field of the device is coupled to communicate, and the transceiver processing unit is electrically connected to the coupling electrode for signal transmission and reception; the coupling electrode is configured to have a first wire length of approximately half of the communication wavelength. And a conductor electrically connected to the first wiring; the central portion of the first wiring and the conductor are formed in a position facing the thickness direction of the dielectric substrate, and are disposed in a central portion of the first wiring; The electrode electromagnetic field coupling of other antenna devices on the extension of the conductor.

According to the present invention, since the first wiring formed by the half of the communication wavelength and the coupling electrode electrically connected to the conductor of the first wiring are formed on the dielectric substrate, good mechanical strength and the antenna can be realized. The overall miniaturization. Further, according to the present invention, since the electromagnetic field of the other antenna device that connects the central portion of the first wiring to the extension of the conductor is electromagnetically coupled, the signal level is high in the central portion of the first wiring, and the efficiency is good. The longitudinal wave of the electric field is released to the thickness direction of the substrate, whereby the coupling strength with the other coupling electrodes disposed at the opposite positions becomes stronger, and good communication characteristics can be realized.

As described above, the present invention can achieve both good communication characteristics and mechanical strength, and can achieve miniaturization of the entire device.

Hereinafter, the form for carrying out the present invention will be described in detail with reference to the drawings. The present invention is not limited to the embodiments described below, and various modifications can be made without departing from the scope of the invention.

<communication system>

An antenna device to which the present invention is applied is a device for performing information communication by electromagnetic field coupling between opposite electrodes, for example, as shown in FIG. 1, and is used for a communication system capable of high-speed transmission of about 560 Mbps. 100 people.

The communication system 100 is composed of two communication devices 101 and 105 that perform data communication. Here, the communication device 101 includes a high frequency coupler 102 having a coupling electrode 103 and a transmission and reception circuit unit 104. Further, the communication device 105 includes a high frequency coupler 106 having a coupling electrode 107 and a transmission and reception circuit unit 108.

When the high-frequency couplers 102 and 106 included in the communication devices 101 and 105 are disposed to face each other as shown in FIG. 1, the two coupling electrodes 103 and 107 operate as one capacitor, and the whole is operated like a band-pass filter. Between the two high frequency couplers 102, 106, a high frequency signal for realizing a high frequency transmission of, for example, about 560 Mbps in the 4 to 5 GHz band can be efficiently transmitted.

Here, the coupling electrodes 103 and 107 for transmitting and receiving each of the high-frequency couplers 102 and 106 are, for example, separated by about 3 cm and disposed opposite each other to perform electric field coupling.

In the communication system 100, for example, when a transmission request is generated from a high-order application, the transceiver circuit unit 104 connected to the high-frequency coupler 102 generates a high-frequency transmission signal based on the transmission data, and transmits the signal from the coupling electrode 103. It goes to the coupling electrode 107. Then, the transceiver circuit unit 108 connected to the high frequency coupler 106 on the receiving side demodulates and decodes the received high frequency signal, and delivers the reproduced data to the high-end application.

In addition, the antenna device to which the present invention is applied is not limited to the above-mentioned high frequency signal for transmitting the 4 to 5 GHz band, and can also be applied to signal transmission in other frequency bands, but in the following specific example, it is high in the 4 to 5 GHz band. The frequency signal is explained as a communication object.

<First embodiment>

The antenna device 1 incorporated in the communication system 100 will be described with respect to the high frequency coupler 1 of the first embodiment shown in Fig. 2 .

In FIG. 2, in order to make it easy to understand the connection state of the wiring 15, it is shown by seeing the dielectric substrate 11.

As shown in FIG. 2, the high-frequency coupler 1 has a structure in which a wiring 15 having a function of the coupling electrode 18 is formed on one surface 11a of the dielectric substrate 11, and is opposed to the surface 11a. The other side 11b is formed with a ground 12.

Further, the coupling electrode 18 has one end of the wiring 15 as a connection terminal portion 19 constituting a connection portion with the transmission/reception circuit portion 104, and the other end of the wiring 15 is connected to the ground 12 through the connection through hole 14. The coupling electrode 18 is formed by a wiring 15 having a shape of a plurality of folded portions, that is, a zigzag shape or a meander shape, and the wiring length of the wiring 15 is adjusted to a length of approximately half of the communication wavelength.

In the coupling electrode 18 formed as described above, it is known from the following evaluation that the position of the signal is from the connection terminal portion 19 at a position 1/4 of the communication wavelength, that is, at the central portion 15a of the wiring 15 In a higher state, the charge of this portion and the image charge on the opposite side of the ground 12 have the function of an electric dipole. Therefore, with the coupling electrode 18, the longitudinal wave of the electric field can be released to the thickness direction of the substrate with good efficiency, and as a result, the coupling strength with the other coupling electrode disposed at the opposite position becomes strong, and Good communication characteristics can be achieved.

The high frequency coupler 1 thus formed is manufactured by the following process. First, on both surfaces of the dielectric substrate 11, as a conductive member, for example, a double-sided copper foil substrate to which a copper foil is attached is used, and one surface 11b is used as the ground 12, and a part of the copper foil of the other surface 11a is removed by etching. The coupling electrode 18 composed of the wire 15 having a meandering shape is formed.

Next, at one end of the wiring 15, a hole is formed by a drill or laser processing, and the opening is subjected to a plating treatment or a conductive material such as a conductive paste is filled, thereby completing the connection. Through hole 14. In this step, the ground 15 which is formed on the wiring 15 of the coupling electrode 18 of the surface 11a of the dielectric substrate 11 and the other surface 11a of the dielectric substrate 11 is electrically connected. Further, among the wirings 15 constituting the coupling electrode 18, the other end which is not connected to the ground 12 serves as the connection terminal portion 19, and is processed into a shape suitable for the connection means with the above-described transceiver circuit portion 104, thereby completing the high Frequency coupler 1.

According to the above process, since the high-frequency coupler 11 can be fabricated by processing one double-sided copper foil substrate, and the entire surface of the one surface 11b is the ground 12, it is not necessary to perform two sides when connecting the wiring 15 and the ground 12. The alignment of the pattern can be easily connected by providing the connection via hole 14 at one end of the contact wiring 15, and can be fabricated by a simple process.

In this way, the high-frequency coupler 1 is composed of a wiring 15 formed in a meandering shape, and one end of the wiring 15 is provided in the surface 11a facing the surface 11b on which the ground 12 is formed. The connection terminal 19 of the input and output terminals of the signal is connected to the transmission circuit unit 104, and the other end is electrically connected to the ground 12. Therefore, good mechanical strength and miniaturization of the high-frequency coupler can be achieved.

As described above, the mechanical strength is strong, and the metal wire 207 which is deformed by an external force is not used as compared with the high-frequency coupler of the conventional example shown in FIG. 21, that is, the dielectric substrate can be used. 11 is configured to mount the coupling electrode 18. Further, it is possible to reduce the size of the entire high-frequency coupler, and it is not necessary to enlarge the area of the electrode, and the coupling strength can be enhanced by adjusting the length of the wiring 15.

Further, in the high-frequency coupler 1, as the material of the dielectric substrate 11, for example, a glass ring of a cured glass such as an epoxy resin or a phenol resin, a substrate of paper, or a woven fabric of glass fibers can be used. Glass epoxy, glass composite substrate, or low-dielectric polyimide, liquid crystal polymer, polytetrafluoroethylene, polystyrene, polyethylene Polyethylene), polypropylene, etc., or a material which is further porous. In particular, the dielectric substrate 11 is preferably made of a material having a low dielectric constant based on electrical characteristics.

Further, in the above-described process, the high-frequency coupler 1 is formed by using a double-sided substrate to which a copper foil is attached, and the wiring 15 is formed as a coupling electrode 18 by etching treatment, but may be applied to the dielectric substrate 11 The surfaces 11a and 11b are formed by direct plating in a masking state by a plating method, a vacuum deposition method, or the like, or a patterning process by etching or the like after formation.

Further, as for the wiring 15 of the coupling electrode 18 and the material of the ground 12, a good conductor such as aluminum, gold or silver may be used in addition to copper, but it is not particularly limited to these materials as long as the conductivity is high. The electrical conductors can be used.

Further, since the coupling electrode 18 is formed with the wiring 15 in a meandering shape, the space of the surface 11a of the dielectric substrate 11 can be effectively utilized, and the high frequency coupler 1 itself can be downsized.

As described above, the length of the coupling electrode 18 is approximately 1/2 wavelength of the communication frequency, but the wiring is densely and densely formed, and the formation space of the coupling electrode 18 can be reduced. In addition, the miniaturization of the high frequency coupler can be achieved.

Further, as described above, the wiring pattern of the wiring 15 constituting the coupling electrode 18 can be joined to a plurality of patterns having different shapes, or L-shaped, from the viewpoint of effectively utilizing the space of the dielectric substrate 11. , a repeating pattern of an arc shape, and the like.

Next, in order to investigate the performance of the high-frequency coupler 1, the three-dimensional electromagnetic field simulator HFSS manufactured by ANSOFT Corporation was used to analyze the coupling strength. Here, as the analysis model of the high-frequency coupler 1, the following conditions are used. Polytetrafluoroethylene is set to the material of the dielectric substrate 11, and copper is set to the material of the conductor of the coupling electrode 18. Further, the size of the high-frequency coupler 1 is 6.5 mm × 6.5 mm in which the wiring pattern 11a is formed, and the substrate thickness is 1.67 mm.

The coupling strength is evaluated by the transmission characteristic S21 of the S parameter (S parameter) used for evaluating the high-frequency transmission characteristic, so that the input terminal portion 19 of the signal output terminal of the high-frequency coupler 1 and the ground 12 are input ports. The coupling strength S21 between the turns of the pair of high frequency couplers is calculated. Fig. 3 shows the relative arrangement between the high frequency couplers used for the analysis of the coupling strength S21. Here, the wiring 15 constituting the coupling electrode 18 of the high-frequency coupler 1 is opposed to the central axis of the electrode 150a of the high-frequency coupler 150 so as to be opposed to each other with a gap of 15 mm and 100 mm therebetween. The frequency characteristics of the coupling strength S21 were investigated. Further, in this example, in one of the high-frequency couplers 150, a reference high-frequency coupler having a plate-shaped electrode 150a and being a reference machine for evaluation is used.

Further, in order to evaluate the state of generation of the electric field in the high-frequency coupler 1, the electric field vector distribution in the vicinity of the high-frequency coupler 1 was also investigated.

Fig. 4 is an analysis of the electric field distribution of the high frequency coupler 1 at 4.5 GHz, and shows the electric field distribution of the cross section of the broken line Y-Y' of Fig. 2 in the thickness direction. As can be seen from FIG. 4, a strong electric field distribution is observed between the coupling electrode 18 and the ground 12, and the electric field is distributed in an arc shape from the central portion 15a of the wiring 15 constituting the coupling electrode 18.

Fig. 5 shows an electric field distribution on a surface which is separated from the surface 11a of the coupling electrode 18 by the high-frequency coupler 1 by 1 mm in the vertical direction. As can be seen from FIG. 5, the electric field is distributed substantially concentrically from the central portion 15a of the wiring 15 constituting the coupling electrode 18.

This is because the length of the wiring 15 constituting the coupling electrode 18 is approximately half of the communication wavelength, and one end of the wiring 15 is connected to the ground 12, and is a so-called short stub. The electric field at the central portion 15a of the portion of 1/4 of the wavelength is the largest. In this way, in the high-frequency coupler 1, it can be confirmed by analysis that a strong electric field is generated centering on the central portion 15a of the coupling electrode 18.

6 is a view showing an analysis result of the coupling strength S21 between the high frequency coupler 1 and the reference high frequency coupler 150. The communication distance of the opposite distance 15 mm has a coupling strength of -22.5 dB in the vicinity of 4.5 GHz, and is expressed in A wide frequency characteristic of 0.69 GHz can be obtained from a frequency band of a maximum intensity attenuation of 3 dB, that is, a -3 dB bandwidth. For example, in TransferJet (registered trademark), there must be a bandwidth of 560 MHz. Generally, the center frequency is shifted depending on the deviation of the high frequency coupler or the impedance matching with the circuit board, but since the high frequency coupler 1 has A wider bandwidth than the required bandwidth, so that good communication can be performed without being affected by such deviations. Further, in the non-communication distance of the distance of 100 mm, the communication blocking property of -48 Db or less can be obtained.

As described above, in the high-frequency coupler 1 of the first embodiment, it is also known from the above simulation that good communication characteristics can be realized, and further, mechanical strength can be achieved, and the overall size of the device can be reduced.

<Modification of First Embodiment>

Next, the high frequency coupler 2 according to the modification shown in FIG. 7 will be described as an antenna device incorporated in the communication system 100.

In order to facilitate understanding of the connection state of the wiring 25, FIG. 7 is a perspective dielectric substrate 21.

As shown in FIG. 7, the high-frequency coupler 2 has a structure in which a wiring 25 having a function of the coupling electrode 28 and a stub connected to the wiring 25 are formed on one surface 21a of the dielectric substrate 21. The stub 27 is formed with a ground 22 on the other surface 21b opposite to the surface 21a.

Further, the coupling electrode 28 has one end of the wiring 25 as a connection terminal portion 29 constituting a connection portion with the transmission circuit portion 104, and the other end of the wiring 25 is connected to the ground 22 through the connection through hole 24a. The coupling electrode 28 is formed by a wiring 25 having a shape of a plurality of folded portions, that is, a zigzag shape or a meander shape, and the wiring length of the wiring 25 is adjusted to a length of approximately half of the communication wavelength.

In the coupling electrode 28 formed by the above-described configuration, it is understood from the following evaluation that the signal is at a position separated from the connection terminal portion 29 by a quarter of the communication wavelength, that is, the central portion 25a of the wiring 25 is a signal level. In a higher state, the charge of this portion and the image charge on the opposite side of the ground 22 have the function of an electric dipole. Therefore, with the coupling electrode 28, the longitudinal wave of the electric field can be released to the thickness direction of the substrate with good efficiency, and as a result, the coupling strength with the other coupling electrode disposed at the opposite position becomes strong, and Good communication characteristics can be achieved.

The stub 27 has one end connected to the coupling electrode 28 by the connection terminal portion 29, and the other end connected to the ground 22 through the connection through hole 24b. Further, the cut line 27 is configured such that when the coupling electrode 28 is coupled to the other electrode electromagnetic field by using the length adjuster, the coupling strength and the bandwidth can satisfy the desired condition.

The high frequency coupler 2 thus formed is manufactured by the following process. First, on both surfaces of the dielectric substrate 21, as a conductive member, for example, a double-sided copper foil substrate to which a copper foil is attached is used, and one surface 21b is used as the ground 22, and a part of the copper foil of the other surface 21a is removed by etching. The coupling electrode 28 and the stub 27 are formed by the wiring 25 having a meandering shape, respectively.

Next, at one end of the wiring 25 and one end of the stub 27, holes are formed by drilling or laser processing, and then each opening is plated or electrically filled with a conductive paste. The material is used to complete the connection through holes 24a, 24b. By this step, the ground 22 which is formed on the wiring 25 of the coupling electrode 28 of the surface 21a of the dielectric substrate 21 and the other surface 21b of the dielectric substrate 21 is electrically connected. In the same manner, the stub 27 and the ground 22 are electrically connected. Further, among the wirings 25 constituting the coupling electrode 28, the other end not connected to the ground 22 is a connection terminal portion 29 connected to the stub 27, and is processed to be suitable for connection with the above-described transceiver circuit portion 104. Shape, thereby completing the high frequency coupler.

Further, as shown in FIG. 7, when the two connection through holes 24a, 24b have a pattern shape close to each other, the position of the end portion of the wiring 25 or the stub 27 constituting the coupling electrode 28 can be adjusted, and the common 1 can be used. A connection through hole is connected to the ground 22.

In this manner, since the high-frequency coupler 2 can process the coupling electrode 28 by processing one double-sided copper foil substrate, the entire surface of one surface 21b becomes the ground 22, so that when the wiring 25 and the ground 22 are connected, it is not necessary to perform two sides. The alignment of the pattern can be easily connected by providing one end of the wiring constituting the coupling electrode 28 and one end of the stub 27, and the connection through holes 24a, 24b can be easily connected, and can be easily fabricated.

Next, in order to investigate the performance of the high-frequency coupler 2, the three-dimensional electromagnetic field simulator HFSS manufactured by ANSOFT Corporation was used to analyze the coupling strength. Here, as the analysis model of the high frequency coupler 2, the following conditions are used. Polytetrafluoroethylene is set to the material of the dielectric substrate 21, and copper is used as the material of the conductor used for the coupling electrode 28 and the stub 27. Further, the size of the high-frequency coupler 2 is 6.5 mm × 6.5 mm in which the wiring pattern surface 21a is formed, the substrate thickness is 1.67 mm, and the length of the stub 27 is 5.2 mm.

The coupling strength is evaluated by the transmission characteristic S21 of the S parameter (S parameter) used for evaluating the high-frequency transmission characteristic so as to be an input port between the connection terminal portion 29 and the ground 22 of the signal output terminal of the high-frequency coupler 2, The coupling strength S21 between the turns of the pair of high frequency couplers is calculated. The relative arrangement between the high frequency couplers used for analysis is the same as that shown in Fig. 3 above.

Fig. 8 is a graph showing the results of analysis of the frequency characteristics of the coupling strength S21 when the opposing distance between the high-frequency couplers is 15 mm. For comparison, the characteristics of the high-frequency coupler 1 having no stub 27, that is, the coupling strength at a distance of 15 mm as shown in Fig. 6, are simultaneously indicated.

Further, in this example, the reference high frequency coupler 150 belonging to the evaluation base is also used in one of the high frequency couplers.

As is apparent from Fig. 8, in the high-frequency coupler 2 having the stub 27, the coupling strength can be improved, but the frequency band in which the strong coupling strength is obtained is narrowed. In general, the strength of the coupling strength and the bandwidth of -3 dB are in a trade-off relationship, so if the equalization is insufficient with respect to the required specifications, it can be set as the high frequency coupler 2 The cut line 27 mainly changes its length to adjust the balance between the two.

<Second embodiment>

Next, the high frequency coupler 3 of the second embodiment shown in FIG. 9 will be described as an antenna device incorporated in the communication system 100.

In Fig. 9, in order to facilitate the understanding of the connection state of the wirings 32a, 32b, the dielectric substrate 31 is shown.

As shown in FIG. 9, the high-frequency coupler 3 has a structure in which the upper surfaces 31a, 31b of the dielectric substrate 31 are respectively formed with a shape having a plurality of inverted portions, that is, a so-called zigzag shape or 蜿Meander-shaped wirings 32a, 32b. One end of the meandering wirings 32a and 32b is electrically connected to the connecting through hole 34a formed in the thickness direction of the dielectric substrate 31, and has a function of the coupling electrode 38 so as to be disposed at a position opposite thereto. The electrode electromagnetic fields of other antenna devices are coupled to communicate.

Further, the coupling electrode 38 is formed with a connection terminal portion 39 formed on the same surface 31b, and the connection terminal portion 39 is formed by an end portion 39a of the wiring 32a not connected to the connection through hole 34a, and a connection through hole 34a. The other end portion of the connected wiring 32b is formed by extending the connecting through hole 34b to the end portion 39b of the surface 31b.

The connection terminal portion 39 is a terminal for connecting to the above-described transceiver circuit portion 104, for example, a connection of a flexible printed circuit board that transmits an anisotropic conductive film, or a connection of a thin-wire coaxial cable through a surface-mounted socket. The means of connection. Therefore, the connection terminal portion 39 can be adjusted in shape, and the connection through hole 34b is omitted by the connection method, and is divided into both surfaces of the dielectric substrate 31, and end portions 39a, 39b are disposed, respectively.

Further, the coupling electrode 38 is formed by connecting the wirings 32a and 32b formed on both sides of the dielectric substrate 31, and the wiring length of the connection wirings 32a and 32b, that is, the length of the coupling electrode 38 is adjusted to communication. The frequency is approximately 1 wavelength. Further, the coupling electrode 38 is opposed to the dielectric substrate 31 via the end portions 39a and 39b of the wirings 32a and 32b which are not connected to the connection through-hole 34a.

As a specific example, in the coupling electrode 38, the end portions 39a and 39b of the wirings 32a and 32b which are not connected to the connection through-hole 34a are separated from the ends of the communication wavelength by 1/4, and become the center of the faces 31a and 31b, respectively. Parts 35a, 35b.

In this manner, in the coupling electrode 38, as is apparent from the following evaluation, the end portions 39a, 39b of the wirings 32a, 32b which are not connected to the connection through holes 34a are separated from the central portion 35a which is 1/4 of the communication wavelength. 35b is opposed to each other via the dielectric substrate 31. Therefore, at the opposite positions, the polarities are opposite and the signal levels are higher, and the electric dipole functions. Therefore, in the coupling electrode 38, the longitudinal wave of the electric field can be released to the thickness direction of the substrate with good efficiency, and as a result, the coupling strength with the other coupling electrode disposed at the intermediate position becomes strong. Achieve good communication characteristics.

The high frequency coupler 3 thus formed is manufactured by the following process. First, on both surfaces of the dielectric substrate 31, a double-sided copper foil substrate to which a copper foil is attached as a conductive layer is subjected to etching to remove a portion of the copper foil to form a wiring having a plurality of inverted portions. 32a, 32b. Next, a portion where one end of the wiring 32a overlaps with one end of the wiring 32b and the other end of the wiring 32b are respectively formed into holes by a drill or laser processing, and the opening is plated. Alternatively, a conductive material such as a conductive paste is filled, thereby completing the connection via holes 34a, 34b, respectively.

By the above-described steps, the wiring 32a formed on the surface 31a of the dielectric substrate 31 and the wiring 32b of the other surface 31b are electrically connected to each other, and have the function of the coupling electrode 38, while the both end portions 39a, 39b of the coupling electrode 38 are connected. It has a function of connecting the terminal portions 39.

In this manner, the high-frequency coupler 3 is connected to each end of the wirings 32a and 32b formed on both surfaces of the dielectric substrate 31 through the connection via hole 34a, so that good mechanical strength and high frequency can be achieved. The coupler 3 is miniaturized as a whole. Further, by the above steps, the high frequency coupler 3 can be easily manufactured by patterning a single double-sided copper foil substrate.

As described above, the mechanical strength is strong, and the metal wire 207 which is deformed by an external force is not used as compared with the high-frequency coupler of the conventional example shown in FIG. 21, that is, the dielectric substrate can be used. The coupling electrode 38 is mounted on 31. Further, it is possible to reduce the size of the entire high-frequency coupler, and it is not necessary to enlarge the area of the electrode, and the coupling strength can be enhanced by adjusting the length of the wiring 35.

Further, in the high-frequency coupler 3, as the material of the dielectric substrate 31, for example, a glass ring of a cured glass such as an epoxy resin or a phenol resin, a substrate of paper, or a woven fabric of glass fibers can be used. Glass epoxy, glass composite substrate, or low-dielectric polyimide, liquid crystal polymer, polytetrafluoroethylene, polystyrene, polyethylene Polyethylene), polypropylene, etc., or a material which is further porous. In particular, the dielectric substrate 31 is preferably made of a material having a low dielectric constant based on electrical characteristics.

Further, in the above-described process, the high-frequency coupler 3 is formed by using a double-sided substrate to which a copper foil is attached, and the wirings 32a and 32b are formed by etching, but may be applied to both surfaces 31a and 31b of the dielectric substrate 31. A vacuum deposition method or the like is formed by directly forming a masking state or performing a patterning process by etching or the like after formation.

Further, as the material of the wirings 32a and 32b, a good conductor such as aluminum, gold or silver may be used in addition to copper, but it is not particularly limited to these materials, and any electric conductor having high conductivity can be used. .

Further, since the coupling electrode 38 forms the wirings 32a and 32b in a meandering shape having a plurality of folded portions, the space of each surface 31a, 31b of the dielectric substrate 31 can be effectively utilized, and the coupling electrode can be obtained. 38 itself is miniaturized.

As described later, the length of the coupling electrode 38 is approximately one wavelength of the communication frequency. However, by forming such wirings in a densely dense manner, the formation space of the coupling electrode 38 can be reduced. The area of the high frequency coupler 3 can be reduced.

In addition, as described above, the wiring pattern of the wirings 32a and 32b of the coupling electrode 38 can be joined to a plurality of patterns having a folded shape having a folded shape based on the viewpoint of effectively utilizing the space of the dielectric substrate 31. Alternatively, an L-shaped or arc-shaped repeating pattern may be used.

Next, in order to investigate the performance of the high-frequency coupler 3, the three-dimensional electromagnetic field simulator HFSS manufactured by ANSOFT Corporation was used to analyze the coupling strength. Here, as the analysis model of the high-frequency coupler 3, the following conditions are used. That is, polytetrafluoroethylene is set for the material of the dielectric substrate 31, and copper is set for the material of the conductor of the coupling electrode 38. Further, the size of the high-frequency coupler 3 is 6.5 mm × 6.5 mm in which the wiring pattern is formed, and the substrate thickness is 1.67 mm.

The coupling strength is evaluated by the transmission characteristic S21 of the S parameter (S parameter) used for evaluating the high-frequency transmission characteristic so as to be an input between the both end portions 39a and 39b of the connection terminal portion 39 which becomes the signal output terminal of the high-frequency coupler. Then, the coupling strength S21 between the turns of the pair of high frequency couplers is calculated. Fig. 10 shows the relative arrangement between the high frequency couplers 3, 150 used for the analysis of the coupling strength S21. Here, the wiring 32a of the coupling electrode 38 of the high-frequency coupler 3 is opposed to the central axis of the electrode 150a of the high-frequency coupler 150, and is in a state of being separated by a distance of 15 mm and 100 mm. The frequency characteristic of the coupling strength S21. Further, in this example, in one of the high-frequency couplers 150, a reference high-frequency coupler having a plate-shaped electrode 150a and being a reference machine for evaluation is used.

Further, in order to observe the state of generation of the electric field in the high-frequency coupler 3, the electric field vector distribution in the vicinity of the high-frequency coupler 3 was also investigated.

Fig. 11 is an analysis of the electric field distribution of the high frequency coupler 3 at 4.5 GHz, and shows the electric field distribution of the cross section of the dotted line Y-Y' of Fig. 9 cut in the thickness direction. As can be seen from Fig. 11, a strong electric field distribution can be observed between the wirings 32a and 32b of the meandering surfaces 31a and 31b of the dielectric substrate 31 constituting the coupling electrode 38, and the electric field is directed outward from the coupling electrode 38. Arc-shaped distribution.

Fig. 12 is a view showing an electric field distribution on a surface which is separated from the surface 31a of the high-frequency coupler 3 by the wiring 32a by a distance of 1 mm in the vertical direction. As can be seen from Fig. 12, the electric field is distributed substantially concentrically from the central portions 35a, 35b of the coupling electrode 38. Therefore, the longitudinal wave of the stronger electric field is radiated to the thickness direction of the high frequency coupler 3 at the time of resonance.

Since the length of the coupling electrode 38 is approximately one wavelength, the potential difference between the central portion 35a of the portion 32a corresponding to a portion corresponding to a substantially 1/4 wavelength from the end portion of the coupling electrode 38 is maximized. In this way, in the high-frequency coupler 3, it can be confirmed by analysis that a strong electric field is generated centering on the central portion of the substrate surface.

Fig. 13 is a view showing the analysis result of the coupling strength S21 between the high-frequency coupler 3 and the reference coupler 150. The communication distance of the opposite distance of 15 mm has a coupling strength of -25 dB around 4.5 GHz, and indicates the attenuation from the maximum intensity. A band of 3 dB in intensity, that is, a -3 dB bandwidth, can obtain a broadband characteristic of 0.86 GHz. For example, in TransferJet (registered trademark), there must be a bandwidth of 560 MHz. Generally, the center frequency is shifted depending on the deviation of the high frequency coupler or the impedance matching with the circuit board, but since the high frequency coupler 3 has A bandwidth of about 1.5 times the bandwidth required, so that good communication can be performed without being affected by such deviations. Further, in the non-communication distance of the distance of 100 mm, the communication blocking property of -60 dB or less can be obtained.

As described above, in the high-frequency coupler 3 of the second embodiment, it is also known from the above simulation that good communication characteristics can be realized, and the mechanical strength can be achieved at the same time, and the overall size of the device can be reduced.

<Third embodiment>

Next, the high frequency coupler 4 of the third embodiment shown in Figs. 14 and 15 will be described as an antenna device incorporated in the communication system 100.

14 and 15 show the high-frequency coupler 4 by changing the viewpoint, and the dielectric plates 41, 42a, and 42b are shown in order to facilitate understanding of the winding state of the coil 48 to be described later.

As shown in FIGS. 14 and 15, the high frequency coupler 4 includes a dielectric substrate 41, 42a, 42b, and a coil 48 having a length substantially equal to the communication wavelength, and is formed at both ends of the coil 48 to be useful. A connection terminal portion 49 to which the circuit board is connected.

The dielectric substrates 42a and 42b are dielectric members laminated on both surfaces of the dielectric substrate 41 by, for example, a bonding step described later. Further, as the material of the dielectric substrate 41, 42a, 42b, for example, a glass ring of a cured glass such as an epoxy resin, a phenol resin, a substrate of paper, or a woven fabric of glass fibers can be used. Glass epoxy, glass composite substrate, or low-dielectric polyimide, liquid crystal polymer, polytetrafluoroethylene, polystyrene, polyethylene Polyethylene), polypropylene, etc., or a material which is further porous. In particular, the dielectric substrates 41, 42a, 42b are preferably made of a material having a low dielectric constant based on electrical characteristics.

The connection terminal portion 49 is a terminal for connecting to the above-described transceiver circuit portion 104, for example, a connection of a flexible printed circuit board that transmits an anisotropic conductive film, or a thin-wire coaxial cable that passes through a surface-mounted socket. Connection means such as connection. Therefore, the connection terminal portion 49 can be adjusted in shape, and the connection through hole 45a, which will be described later, is omitted by the connection method, and is divided into both surfaces of the dielectric substrate 41, and terminals are respectively disposed.

The coil 48 has a function of a coupling electrode and is communicable by electromagnetic field coupling with electrodes of other antenna devices disposed at opposite positions. The coil 48 is configured to connect the upper coil 47a and the lower coil 47b, which will be described later, so that the wiring length of the upper coil 47a and the lower coil 47b is connected, that is, the length of the coil 48 is adjusted to a substantially one wavelength of the communication frequency. Further, the coil 48 is separated from the upper end coil 47a of the connecting through hole 45b and the end portion of the lower coil 47b, that is, the connection terminal portion 49, by a distance of 1/4 of the communication wavelength, across the dielectric substrate 41. , 42a, 42b are opposite.

As a specific example, the coil 48 is separated from the two end portions of the connection terminal portion 49 by a quarter of the communication wavelength, and is a central portion 46a, 46b of the dielectric substrates 41, 42a, 42b, respectively.

In this manner, in the coil 48, as is apparent from the following evaluation, the dielectric substrate 41, 42a, 42b is opposed to each other by the position of 1/4 of the communication wavelength from the two end portions of the connection terminal portion 49. Therefore, at these relative positions, the polarity is opposite and the signal levels are higher, and the electric dipole function. Therefore, in the coil 48, the longitudinal wave of the electric field can be released to the thickness direction of the substrate with good efficiency, and as a result, the coupling strength with the other coupling electrode disposed at the opposite position becomes strong, and good can be achieved. Communication characteristics.

The high frequency coupler 4 thus formed is manufactured by the following process. First, a plurality of upper and lower lines 43a and 43b made of a conductive metal such as copper or aluminum are formed on both surfaces of the dielectric substrate 42a, and one end of the upper line 43a and one end of the lower line 43b are formed on the upper surface 43a. The other end is sequentially overlapped with the adjacent other lower wires 43b via the dielectric substrate 42a.

Further, the formation of the plurality of upper lines 43a and lower lines 43b may be performed by treatment such as plating or vapor deposition on both surfaces of the dielectric substrate 42a, or by using a dielectric substrate 42a having copper foils on both sides thereof. An etching process is formed.

The dielectric substrate 42a on which the upper line 43a and the lower line 43b are formed is formed with a plurality of through holes 44 at a position where the upper line 43a and the lower line 43b overlap each other by a drill, a laser or the like. The through holes 44 are subjected to a metal plating treatment or a conductive paste or the like, and the through holes 44 are electrically connected to all of the upper and lower lines 43a and 43b formed on both surfaces of the dielectric substrate 42a to complete the spiral. The upper coil 47a is in the form of a (solenoid). Similarly to the above-described upper coil 47a, the lower coil 47b is formed on the dielectric substrate 42b. Further, one end of the upper coil 47a is also connected to one of the connection terminal portions 49 through the through hole 44 in the above process.

Next, connection via holes 45a and 45b are formed in the dielectric substrate 41. This is formed by metal plating treatment in a portion such as a drill or a laser, or filling a conductive paste or a metal rod. Next, on both surfaces of the dielectric substrate 41, the dielectric substrate 42a is bonded so that one end of the upper coil 47a is overlapped with the connection through hole 45b, and one end of the lower coil 47b is overlapped with the connection through hole 45b, and the lower coil The other end of the 47b is laminated and electrically connected so as to overlap the through hole 45a for connection. Thereby, all the metal portions are connected, and one coil 48 having the connection terminal portions 49 at both ends is formed in the dielectric substrates 41, 42a, 42b.

Further, as described above, the bonding of the substrates is thermocompression-bondable depending on the material of the dielectric substrate, but it is preferably carried out using an adhesive agent from the viewpoint of preventing deformation or the like. When both ends of the through-holes 45a and 45b to be electrically connected are provided in advance so as to be convex to the dielectric substrate 41, the adhesive can be penetrated to be reliably connected to the upper coil 47a and the lower coil 47b. Further, in order to make the connection reliable, it is preferable that the periphery of the connecting portion is a material that is omitted in advance or an anisotropic conductive film in which anisotropic conductive particles are blended.

Further, the connection between the upper coil 47a formed on the dielectric substrate 42a and the lower coil 47b formed on the dielectric substrate 42b may be the following method. First, on the both surfaces of the dielectric substrate 41, the dielectric substrate 42a on which the upper coil 47a is formed and the dielectric substrate 42b on which the lower coil 47b is formed are attached by an adhesive or the like. Then, at both ends of the upper coil 47a and the lower coil 47b, an opening is formed by a drill or the like, and the connection hole 45b is connected to one end of the upper coil 47a and the lower coil 47b, and the other end of the lower coil 47b is connected. The connection hole portion 45a is connected to the connection terminal portion 49 which is formed when the upper wire 43a is formed in advance, whereby the coil 48 can be formed. The coil 48 has a function of a coupling electrode and is communicable by electromagnetic field coupling with electrodes of other antenna devices disposed at opposite positions.

In this manner, the coils 48 are wound on the upper and lower surfaces of the dielectric substrates 42a and 42b which are laminated on both surfaces of the dielectric substrate 41, and are wound into a coil shape through the through holes 44, and are wound and connected through the through holes 45b for connection. At each end of the wiring on both surfaces of the dielectric substrates 42a and 42b, it is possible to achieve good mechanical strength and miniaturization of the entire high-frequency coupler 1.

As described above, the mechanical strength is strong, and the metal wire 207 which is deformed by an external force is not used as compared with the high-frequency coupler of the conventional example shown in FIG. 21, that is, the dielectric substrate can be used. The coil 48 having the function of the coupling electrode is constructed on the 41. Further, it is possible to reduce the size of the entire high-frequency coupler, and it is not necessary to enlarge the area of the electrode, and the coupling strength can be enhanced by adjusting the length of the entire coil 48.

Next, in order to investigate the performance of the high-frequency coupler 4, the three-dimensional electromagnetic field simulator HFSS manufactured by ANSOFT Corporation was used to analyze the coupling strength. Here, as the analysis model of the high-frequency coupler 4, the following conditions are used. That is, the material of the dielectric body is made of polytetrafluoroethylene for the dielectric substrate 41, and the liquid crystal polymer is set for the dielectric substrates 42a and 42b. Further, copper is set for the material of the coil 48. The size of the high-frequency coupler 4 was 6.5 mm × 6.5 mm in which the wiring pattern was formed, and the thickness of the substrate was set to 2 mm.

The coupling strength is evaluated by the transmission characteristic S21 of the S parameter (S parameter) used for evaluating the high-frequency transmission characteristic, so that the two ends of the connection terminal portion 49 of the signal output terminal of the high-frequency coupler are inputs of electric power. . Fig. 16 is a view showing the relative arrangement between the high frequency couplers used for analyzing the coupling strength S21. Here, the upper coil 47a of the high-frequency coupler 4 is opposed to the central axis of the electrode 150a of the high-frequency coupler 150, and the coupling strength S21 is investigated with a gap of 15 mm and 100 mm therebetween. Frequency characteristics. Further, in this example, in one of the high-frequency couplers 150, a reference high-frequency coupler having a plate-shaped electrode 150a and being a reference machine for evaluation is used.

Further, in order to observe the state of generation of the electric field in the high-frequency coupler 4, the electric field vector distribution in the vicinity of the high-frequency coupler 4 was also investigated.

Fig. 17 is a view showing an analysis portion of the electric field vector distribution, which is shown by a broken line in the figure XX', that is, through the central portions 46a, 46b of the high-frequency coupler 4, and extends in the width direction of the substrate, that is, the XY axis and The surface in the thickness direction, that is, the Z axis is set as the analysis surface. Here, the direction of the high frequency coupler 4 with respect to the rectangular parallelepiped from the center toward the connection terminal portion 49 is the Y axis which is the longitudinal direction.

18 and 19 show the analysis results of the electric field vector distribution of the resonance frequency of the high-frequency coupler 4, that is, 4.5 GHz, in the YZ plane and the XY plane, respectively. Here, Fig. 19 shows an electric field distribution on a surface which is separated from the surface of the high-frequency coupler 4 on which the upper coil 47a is formed by 1 mm in the vertical direction. As can be seen from these two figures, the upper coil 47a and the lower coil 47b form electrodes having different polarities, and a strong electric field distribution is generated therebetween. Therefore, the longitudinal wave of the stronger electric field is radiated to the thickness direction of the high frequency coupler 4, that is, the Z-axis direction at the time of resonance.

Fig. 20 is a view showing the analysis result of the coupling strength S21 between the high frequency coupler 4 and the reference high frequency coupler 150. The communication distance of the opposite distance 15 mm has a coupling strength of -25 dB around 4.5 GHz, and is -3 dB. The bandwidth can achieve broadband characteristics above 1.1 GHz. For example, in TransferJet (registered trademark), there must be a bandwidth of 560 MHz. Generally, the center frequency is shifted depending on the deviation of the high frequency coupler or the impedance matching with the circuit board, but since the high frequency coupler 4 has It is about twice the bandwidth of the required bandwidth, so it can not be affected by these deviations and can communicate well. Moreover, the communication blocking performance of -47 dB or less is obtained in the non-communication distance of the distance of 100 mm.

As described above, in the high-frequency coupler 4 of the third embodiment, it is also known from the above simulation that good communication characteristics can be realized, and mechanical strength can be achieved, and the entire device can be downsized.

<High-frequency coupler of the first to third embodiments>

The high-frequency coupler according to the first to third embodiments is formed of a first electrode having a length of substantially half the communication wavelength and a coupling electrode formed by electrically connecting the conductor of the first wiring to the dielectric. The substrate can achieve good mechanical strength and miniaturization of the entire antenna device. Further, in the above-described first to third embodiments, the high frequency coupler is electromagnetically coupled to the electrode of another antenna device that is disposed on the extension of the central portion of the first wiring and the conductor, and therefore is connected to the first wiring. The central portion of the signal level is in a higher state, and the longitudinal wave of the electric field is released to the thickness direction of the substrate with good efficiency, whereby the coupling strength between the other coupling electrodes disposed at the opposite positions becomes stronger, and Good communication characteristics can be achieved.

As described above, the high-frequency couplers according to the first to third embodiments of the present invention can achieve both good communication characteristics and mechanical strength, and can reduce the size of the entire device.

1,2,3,4. . . High frequency coupler

11,21,31,41,42a,42b. . . Dielectric substrate

11a, 11b, 21a, 21b, 31a, 31b. . . surface

12,22. . . Ground

14. . . Connection through hole

15,25,32a,32b. . . Wiring

15a, 25a, 35a, 35b, 46a, 46b. . . Central department

18,28,38. . . Coupling electrode

19,29,39,49. . . Connection terminal

39a, 39b. . . Ends

24a, 24b, 34a, 34b, 45a, 45b. . . Connection through hole

27. . . Cut line

43a. . . Upper line

43b. . . Line below

44. . . Through hole

47a. . . Upper coil

47b. . . Below coil

48. . . Coil

100. . . Communication system

101,105. . . Communication device

102,106. . . High frequency coupler

103,107. . . Coupling electrode

104,108. . . Transceiver circuit

150. . . High frequency coupler

150a. . . electrode

201. . . Printed substrate

202. . . Ground

203. . . Cut line

205. . . Transceiver circuit

207. . . metal wires

208. . . Coupling electrode

Fig. 1 is a view showing the configuration of a communication system in which an antenna device to which the present invention is applied is assembled.

Fig. 2 is a view showing the configuration of a high frequency coupler according to the first embodiment to which the antenna device of the present invention is applied.

Fig. 3 is a perspective view showing a communication state between the high frequency couplers in the high frequency coupler according to the first embodiment.

Fig. 4 is a view showing an electric field distribution of a result of electric field analysis at a center cross section in the high-frequency coupler of the first embodiment.

Fig. 5 is a view showing an electric field distribution of an electric field analysis result at 1 mm on the electrode surface of the high-frequency coupler of the first embodiment.

Fig. 6 is a frequency characteristic diagram showing an analysis result of the coupling strength between the high-frequency coupler and the reference coupler of the first embodiment.

Fig. 7 is a view showing the configuration of a high frequency coupler which is a modification of the antenna device to which the present invention is applied.

Fig. 8 is a frequency characteristic diagram showing an analysis result of a coupling strength between a high frequency coupler and a reference coupler according to a modification.

Fig. 9 is a view showing the configuration of a high frequency coupler according to a second embodiment of the antenna device to which the present invention is applied.

Fig. 10 is a perspective view showing a communication state between the high frequency couplers in the high frequency coupler of the second embodiment.

Fig. 11 is a view showing an electric field distribution of an electric field analysis result at a center cross section in the high-frequency coupler of the second embodiment.

Fig. 12 is a view showing an electric field distribution of an electric field analysis result at 1 mm on the electrode surface of the high-frequency coupler of the second embodiment.

Fig. 13 is a frequency characteristic diagram showing an analysis result of the coupling strength between the high-frequency coupler and the reference coupler of the second embodiment.

Fig. 14 is a view showing the configuration of a high frequency coupler according to a third embodiment of the antenna device to which the present invention is applied.

Fig. 15 is a view showing the configuration of a high frequency coupler according to a third embodiment of the antenna device to which the present invention is applied.

Fig. 16 is a perspective view showing a communication state between the high frequency couplers in the high frequency coupler of the third embodiment.

Fig. 17 is a perspective view showing an analytical cross section of an electric field vector of the high-frequency coupler of the third embodiment.

Fig. 18 is a view showing an electric field distribution of a result of electric field analysis at a center cross section in the high-frequency coupler of the third embodiment.

Fig. 19 is a view showing an electric field distribution of an electric field analysis result at 1 mm on the electrode surface of the high-frequency coupler of the third embodiment.

Fig. 20 is a frequency characteristic diagram showing an analysis result of the coupling strength between the high-frequency coupler and the reference coupler of the third embodiment.

Fig. 21 is a view showing the configuration of a high frequency coupler of a conventional example.

Fig. 22 is a view showing the configuration of a high frequency coupler of a conventional example.

1. . . High frequency coupler

11. . . Dielectric substrate

11a, 11b. . . surface

12. . . Ground

14. . . Connection through hole

15. . . Wiring

15a. . . Central department

18. . . Coupling electrode

19. . . Connection terminal

Claims (9)

An antenna device is configured to perform information communication by coupling electromagnetic waves between opposite ones of a predetermined communication wavelength, and is characterized in that: an electrode for coupling is formed on a dielectric substrate, and an electromagnetic field of an electrode with another antenna device is provided. Coupling is possible to perform communication; the coupling electrode is composed of a first wiring that is two-dimensionally formed by a half length of the communication wavelength, and a conductor that is electrically connected to the first wiring; and the center of the first wiring The portion and the conductor are formed at positions facing the thickness direction of the dielectric substrate, and are electromagnetically coupled to the electrodes of the other antenna device disposed on the extension of the center portion of the first wiring and the conductor. The antenna device of claim 1, wherein the conductive system is formed on a surface of one surface of the dielectric substrate; the first wiring is formed to face the dielectric layer opposite to the surface on which the formation is formed The surface of the body substrate has a plurality of reflexed portions, and the first wiring has a structure in which an output end of the signal is formed at one end portion, and the other end portion is electrically connected to the ground layer. The antenna device according to claim 2, wherein the coupling electrode is connected to a stub having a predetermined length branched from an input/output end of the first wiring. The antenna device according to claim 1, wherein the first wiring is formed on one surface of the dielectric substrate; the conductor is formed by substantially half of a length of the communication wavelength, and a second wiring that is formed on a surface of the dielectric substrate that faces the surface on which the first wiring is formed, and that is connected to the first wiring through the through hole; the first wiring and the second wiring Each position that is not connected to the end of the through hole and is separated from one quarter of the communication wavelength is opposed to the dielectric substrate. The antenna device according to claim 4, wherein the first wiring and the second wiring are connected to each end of a wire having a plurality of turns of a plurality of reversed portions through a through hole. The antenna device of claim 5, wherein the first and second dielectric layers are layered on both sides of the dielectric substrate; and the first wiring is formed by laminating the dielectric substrate The upper and lower surfaces of the dielectric layer are wound into a coil shape through the through holes, and the second wiring is wound into a coil shape through the through holes in the upper and lower surfaces of the second dielectric layer in which the dielectric substrate is laminated; The hole connection is formed by winding the respective ends of the first wiring and the second wiring on both surfaces of the dielectric substrate. A communication device is configured to perform information communication by electromagnetic field coupling between a pair of opposite electrodes by a predetermined communication wavelength, and is characterized in that: an electrode for coupling is formed on a dielectric substrate, and an electrode electromagnetic field is formed with other antenna devices. Coupling for communication; and a transceiver processing unit electrically connected to the coupling electrode for signal transmission and processing; the coupling electrode is configured to be two-dimensionally composed of approximately half of the communication wavelength a first wiring and a guide electrically connected to the first wiring The central portion of the first wiring and the conductor are formed in a position facing the thickness direction of the dielectric substrate, and are disposed on an extension of the central portion connecting the first wiring and the conductor. The electrodes of the other antenna devices are electromagnetically coupled. The communication device of claim 7, wherein the conductive system is formed on a surface of one surface of the dielectric substrate; the first wiring is formed to face the dielectric layer opposite to the surface on which the formation is formed The surface of the body substrate has a plurality of inverted portions, and the first wiring has a structure in which an end portion not connected to the transmission processing portion is electrically connected to the ground layer. The communication device of claim 7, wherein the first wiring is formed on one surface of the dielectric substrate; the conductor is formed by substantially half of the communication wavelength, and is formed and formed The surface of the first wiring faces the surface of the dielectric substrate, and is a second wiring that is connected to the first wiring through the through hole; and the transmission processing unit is formed to be connected to the communication. The connection terminal of the first wiring and the end portion of the second wiring is electrically connected to the coupling electrode, and the first wiring and the second wiring are separated from the connection terminal by 1/10 of the communication wavelength. Each position of 4 is opposed to each other via the dielectric substrate.