TWI535880B - Device and method for manufacturing sic epitaxial wafer - Google Patents

Device and method for manufacturing sic epitaxial wafer Download PDF

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TWI535880B
TWI535880B TW103139995A TW103139995A TWI535880B TW I535880 B TWI535880 B TW I535880B TW 103139995 A TW103139995 A TW 103139995A TW 103139995 A TW103139995 A TW 103139995A TW I535880 B TWI535880 B TW I535880B
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sic
substrate
carbon
sic epitaxial
sic substrate
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TW103139995A
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TW201527578A (en
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乘松潤
宮坂晶
影島慶明
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昭和電工股份有限公司
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    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
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Description

SiC磊晶晶圓的製造裝置及SiC磊晶晶圓的製造方法 SiC epitaxial wafer manufacturing apparatus and SiC epitaxial wafer manufacturing method

本發明係關於一種SiC磊晶晶圓的製造裝置及SiC磊晶晶圓的製造方法。本申請案係主張基於2013年12月24日向日本國特許廳申請的特願2013-266010的優先權，將其揭示內容引用於此處。 The present invention relates to a device for manufacturing an SiC epitaxial wafer and a method for manufacturing an SiC epitaxial wafer. The present application claims priority to Japanese Patent Application No. 2013-266010, filed on Dec.

碳化矽(SiC)相較於矽(Si)，具有於絕緣破壞電場大1位數，能帶間隙大3倍，並且熱導率高約3倍等的特性。因此，碳化矽(SiC)被期待應用於功率元件、高頻元件、高溫動作元件等。近幾年，SiC磊晶晶圓已被使用於如上述的半導體元件。 Compared with bismuth (Si), tantalum carbide (SiC) has a characteristic that the dielectric field is one digit larger than the dielectric breakdown, the energy gap is three times larger, and the thermal conductivity is about three times higher. Therefore, tantalum carbide (SiC) is expected to be applied to power elements, high frequency elements, high temperature operation elements, and the like. In recent years, SiC epitaxial wafers have been used for semiconductor elements as described above.

SiC磊晶晶圓，係使用從以昇華法等製作的SiC的塊狀單晶體加工的SiC單晶基板作為形成SiC磊晶膜的基板而製造。一般，SiC磊晶晶圓，係藉由利用化學氣相沉積法(Chemical Vapor Deposition：CVD)，使成為SiC半導體元件活性區域的SiC磊晶膜沉積於SiC單晶基板上而製造。 The SiC epitaxial wafer is produced by using a SiC single crystal substrate processed from a bulk single crystal of SiC produced by a sublimation method or the like as a substrate on which an SiC epitaxial film is formed. Generally, a SiC epitaxial wafer is produced by depositing a SiC epitaxial film which is an active region of a SiC semiconductor device on a SiC single crystal substrate by chemical vapor deposition (CVD).

就用於製造SiC磊晶晶圓的裝置而言，可列舉水平自公轉型的磊晶沉積裝置，其係水平地配置複 數片晶圓，使各晶圓公轉，並且以晶圓中心為軸而使晶圓本身自轉(參照第1圖所記載的SiC磊晶晶圓的製造裝置)。此種磊晶沉積裝置，一般是在由石墨構成的可旋轉的搭載板(載置台)上，以包圍此搭載板之旋轉軸的方式設有SiC單晶基板載置部，即由石墨構成的複數個輔助器(satellite)。在搭載板及輔助器的上方配置有由石墨構成的圓盤狀的頂板。在頂板的中央部設有用於供應原料氣體給SiC單晶基板上的氣體供應部。藉由輔助器利用旋轉驅動機構而可自轉，載置於此輔助器上的SiC單晶基板構成為可自公轉，可以搭載板的旋轉軸為中心而公轉並且自轉。 As for the device for manufacturing the SiC epitaxial wafer, a horizontally self-transformed epitaxial deposition device can be cited, which is configured horizontally. A plurality of wafers are revolved, and the wafer itself is rotated by the center of the wafer (see the manufacturing apparatus of the SiC epitaxial wafer described in FIG. 1). Such an epitaxial deposition apparatus is generally provided with a SiC single crystal substrate mounting portion, that is, a graphite, on a rotatable mounting plate (mounting table) made of graphite so as to surround the rotating shaft of the mounting plate. A plurality of satellites (satellite). A disk-shaped top plate made of graphite is disposed above the mounting plate and the auxiliary device. A gas supply portion for supplying a material gas to the SiC single crystal substrate is provided at a central portion of the top plate. The SiC single crystal substrate placed on the auxiliary device can be self-rotated by the assisting device by the rotation driving mechanism, and can be self-revolving, and can be revolved and rotated around the rotating shaft of the mounting plate.

在如上述的磊晶沉積裝置方面，藉由從氣體供應部供應原料氣體，從載置於搭載板上的SiC單晶基板的外周端部以通過此SiC單晶基板上的方式供應原料氣體。此時，藉由一面利用加熱手段將SiC單晶基板維持於高溫，一面使磊晶材料堆積於基板上，成膜磊晶膜。 In the epitaxial deposition apparatus as described above, the source gas is supplied from the gas supply portion, and the material gas is supplied from the outer peripheral end portion of the SiC single crystal substrate placed on the mounting plate through the SiC single crystal substrate. At this time, the epitaxial material is deposited on the substrate while maintaining the SiC single crystal substrate at a high temperature by a heating means to form an epitaxial film.

且說，在此種裝置方面，一般是將由石墨構成的搭載板(基座)或輔助器等各構件暴露於高溫下，為了防止在磊晶膜內產生來自石墨的沉積等，而進行例如利用TaC等披覆膜塗布此等的各構件。例如，專利文獻1及2中記載了以SiC或TaC等塗布由石墨構成的磊晶沉積爐的構件的表面。專利文獻3及4中記載了輔助器作為載置台的一部分，並記載了適當使用以SiC或TaC等披覆此等構件表面的技術。專利文獻5至7中記載了為了保護由石墨構成的構件的一部分而進行塗布。 In addition, in such a device, each member such as a mounting plate (base) or an auxiliary device made of graphite is generally exposed to a high temperature, and in order to prevent deposition of graphite or the like in the epitaxial film, for example, TaC is used. Each of these members is coated with an isocoat film. For example, Patent Documents 1 and 2 describe the surface of a member in which an epitaxial deposition furnace made of graphite is coated with SiC or TaC or the like. Patent Literatures 3 and 4 disclose that the assister is a part of the mounting table, and it is described that a technique of coating the surface of these members with SiC, TaC or the like is suitably used. Patent Documents 5 to 7 describe coating in order to protect a part of a member made of graphite.

先前技術文獻 Prior technical literature 專利文獻 Patent literature

專利文獻1 特開2010-150101號公報 Patent Document 1 JP-A-2010-150101

專利文獻2 特表2004-507619號公報 Patent Document 2 Special Table 2004-507619

專利文獻3 特開2013-38152號公報 Patent Document 3, JP-A-2013-38152

專利文獻4 特開2013-38153號公報 Patent Document 4, JP-A-2013-38153

專利文獻5 特表2005-508097號公報 Patent Document 5 Special Table 2005-508097

專利文獻6 特開2008-270682號公報 Patent Document 6 JP-A-2008-270682

專利文獻7 特表平10-513146號公報 Patent Document 7 Special Report No. 10-513146

此處，使SiC磊晶膜沉積於SiC單晶基板上之際，有在SiC磊晶膜的外周部，即邊緣附近，載子濃度變得過高，此SiC磊晶膜面內的載子濃度的偏差變大的問題。 Here, when the SiC epitaxial film is deposited on the SiC single crystal substrate, the carrier concentration becomes too high in the outer peripheral portion of the SiC epitaxial film, that is, in the vicinity of the edge, and the carrier in the SiC epitaxial film surface is present. The problem of the deviation of the concentration becomes large.

本發明者等就如上述的載子濃度的偏差產生的原因，一心努力反覆研討。此結果，發現了原因在於：對於一般用作SiC磊晶膜原料氣體的丙烷(C3H8)與矽烷系氣體(SiH4)，其分解速度係大幅地不同。 The present inventors have tried hard to repeatedly discuss the cause of the variation in the concentration of the above-described carrier. As a result, it was found that the decomposition rate of propane (C 3 H 8 ) and decane-based gas (SiH 4 ) which are generally used as a raw material gas of the SiC epitaxial film is largely different.

已知含碳的C3H8的分解速度比SiH4慢。在磊晶沉積時供應原料氣體給SiC單晶基板上之際，由於SiC單晶基板為自轉狀態，所以SiC單晶基板的外周端部接近氣體的導入口(氣流的上游側)。即，SiC磊晶膜隨著此等原料氣體的供應而沉積之際，在成為氣流上游側的SiC 單晶基板的外周部附近，含碳的C3H8的分解未充分地進行，沉積膜中所含的碳減少。另一方面，在成為下游側的基板中心附近，含碳的C3H8的分解充分地進行，所以相較於外周部附近，碳比率相對地增加。 Carbon-containing C 3 H 8 is known to decompose faster than SiH 4 . When the raw material gas is supplied to the SiC single crystal substrate during the epitaxial deposition, the SiC single crystal substrate is in an autorotating state, so that the outer peripheral end portion of the SiC single crystal substrate is close to the gas introduction port (the upstream side of the gas flow). In other words, when the SiC epitaxial film is deposited with the supply of the source gas, the decomposition of the carbon-containing C 3 H 8 is not sufficiently performed in the vicinity of the outer peripheral portion of the SiC single crystal substrate on the upstream side of the gas stream, and the film is deposited. The carbon contained in it is reduced. On the other hand, in the vicinity of the center of the substrate on the downstream side, the decomposition of the carbon-containing C 3 H 8 is sufficiently performed, so that the carbon ratio relatively increases as compared with the vicinity of the outer peripheral portion.

由於供應的原料氣體的C/Si比設定在假定丙烷(C3H8)與矽烷系氣體(SiH4)充分地分解之上，所以若有分解速度的不同，則相對地在SiC磊晶膜的外周部，就會成為C/Si比低的狀態。即，雖然在分解充分地進行的基板中心附近，SiC磊晶膜面內的載子濃度被適當地控制，但在外周部，卻有C/Si比變低、載子濃度變高的問題。 Since the C/Si ratio of the supplied material gas is set on the assumption that propane (C 3 H 8 ) and decane-based gas (SiH 4 ) are sufficiently decomposed, if there is a difference in decomposition rate, the SiC epitaxial film is relatively The outer peripheral portion will be in a state where the C/Si ratio is low. In other words, the concentration of the carrier in the plane of the SiC epitaxial film is appropriately controlled in the vicinity of the center of the substrate which is sufficiently decomposed, but the C/Si ratio is lowered and the carrier concentration is increased in the outer peripheral portion.

茲就C/Si比在此外周部低而載子濃度在外周部變高此一情況進行說明。在SiC磊晶沉積中，一般使用N作為載子，但此N會被選擇地導入碳原子占有之處。若C/Si比低，相對地在原料氣體的碳量就變低，所以成為載子的N容易進入磊晶沉積的SiC膜的碳占有之處。即，為載子的N的接收增加，載子濃度變高了。因此，在以往的方法上，會發生SiC磊晶膜外周部的載子濃度變高、偏差變大的問題。 The case where the C/Si ratio is lower at the other peripheral portion and the carrier concentration is higher at the outer peripheral portion will be described. In SiC epitaxial deposition, N is generally used as a carrier, but this N is selectively introduced into the carbon atom. When the C/Si ratio is low, the amount of carbon in the material gas is relatively low, so that the N which becomes a carrier easily enters the carbon occupied by the epitaxially deposited SiC film. That is, the reception of N for the carrier increases, and the carrier concentration becomes high. Therefore, in the conventional method, there is a problem that the carrier concentration in the outer peripheral portion of the SiC epitaxial film becomes high and the variation becomes large.

此處，由於外周部的碳量不足，載子濃度變低，所以認為例如藉由提高上述原料氣體的碳濃度，以提高SiC磊晶膜外周部的C/Si比。然而，只是提高碳濃度，中央部的C/Si比會變動，無法抑制晶圓中央部與外周部的載子濃度差。 Here, since the amount of carbon in the outer peripheral portion is insufficient and the carrier concentration is lowered, it is considered that the C/Si ratio of the outer peripheral portion of the SiC epitaxial film is increased by, for example, increasing the carbon concentration of the material gas. However, only by increasing the carbon concentration, the C/Si ratio at the center portion fluctuates, and the difference in carrier concentration between the central portion and the outer peripheral portion of the wafer cannot be suppressed.

關於抑制如上述，以往使SiC磊晶膜沉積於SiC單晶基板上之際產生的載子濃度在面內的偏差的裝置，實際情況是並沒有任何提案。因此，迫切地需要不引起步驟的增加或成本增高而可在膜的面內使沉積於SiC單晶基板上的SiC磊晶膜的載子濃度有效地均勻化的裝置及方法。 As described above, conventionally, there has been no proposal for a device having a variation in the in-plane concentration of the carrier concentration which is generated when the SiC epitaxial film is deposited on the SiC single crystal substrate. Therefore, there is an urgent need for an apparatus and method for efficiently uniformizing the carrier concentration of a SiC epitaxial film deposited on a SiC single crystal substrate in the plane of the film without causing an increase in steps or an increase in cost.

本發明係有鑑於上述問題而完成，其目的係提供一種可用簡便的構造使晶圓面內的載子濃度均勻化、在製造品質及生產性方面優良的SiC磊晶晶圓的製造裝置及SiC磊晶晶圓。 The present invention has been made in view of the above problems, and an object of the present invention is to provide a SiC epitaxial wafer manufacturing apparatus and SiC which are excellent in manufacturing quality and productivity in that a carrier concentration in a wafer surface can be made uniform by a simple structure. Epitaxial wafer.

本發明者等為了抑制如上述的產生於SiC磊晶晶圓的SiC磊晶膜的載子濃度在面內的偏差，專心努力反覆研討。其結果，發現了用於SiC磊晶膜沉積的原料氣體之中，碳化氫系氣體比矽烷系氣體分解速度慢，所以起因於位於原料氣體氣流上游的晶圓外周部的C/Si變低，而晶圓外周部比晶圓中央部載子濃度變高。即，本發明者等認為藉由在晶圓外周部附近具備補充碳的構造，可抑制載子濃度的偏差。 In order to suppress the variation in the in-plane concentration of the carrier concentration of the SiC epitaxial film generated in the SiC epitaxial wafer as described above, the inventors of the present invention have devoted themselves to repeated studies. As a result, it has been found that among the material gases used for the deposition of the SiC epitaxial film, the decomposition rate of the hydrocarbon gas is slower than that of the decane-based gas, so that the C/Si of the outer peripheral portion of the wafer located upstream of the source gas stream is low. The outer peripheral portion of the wafer has a higher carrier concentration than the central portion of the wafer. In other words, the inventors of the present invention thought that it is possible to suppress variation in carrier concentration by providing a structure in which carbon is added in the vicinity of the outer peripheral portion of the wafer.

就只將外周部附近的碳濃度提高的方法而言，如第10圖所示，考量將以往以由石墨構成之基材501塗布由TaC等構成之披覆膜502的方式而形成的輔助器500構成為例如基材501露出的狀態。即，可視為形成為下述構造：如第11圖所示的輔助器600，藉由使基材601即石墨完全露出，利用磊晶沉積時的熱，可從輔助器600取出碳而供應給原料氣體。 In the method of improving the carbon concentration in the vicinity of the outer peripheral portion, as shown in FIG. 10, an auxiliary device formed by coating the base film 501 made of graphite with a coating film 502 made of TaC or the like is considered. The structure of 500 is, for example, a state in which the substrate 501 is exposed. That is, it can be considered that the assistor 600 is formed such that the auxiliary material 600 shown in FIG. 11 can be taken out from the assister 600 by the heat at the time of epitaxial deposition by completely exposing the base material 601, that is, graphite. Raw material gas.

然而，如第11圖所示，在不塗布基材601即石墨表面的狀態使用輔助器600時，載置於輔助器600上的SiC單晶基板11的背面11b與石墨基材會直接接觸。因此，得知SiC單晶基板11的背面11b會變粗糙。此種情事一發生，在其後的步驟中製造各種元件時，就難以從SiC磊晶晶圓本來優良的物理性質得到如所期待般地電氣特性，此外在檢查步驟中也有基板的吸附錯誤等發生之虞。在採用了石墨材料完全露出的構件時，若石墨材料與SiC單晶基板接觸，則在接觸時，摩擦的石墨會成為粒子，有使附著於SiC磊晶膜表面等表面狀態惡化之虞。因此，不對輔助器的基材施以塗布處理，而只是形成為石墨露出整個輔助器的構造，課題是無法解決的。當然，只是取消在SiC的CVD沉積中所必需的TaC或SiC的塗布，將會產生缺陷。 However, as shown in Fig. 11, when the assistor 600 is used in a state where the surface of the graphite 601, that is, the graphite is not applied, the back surface 11b of the SiC single crystal substrate 11 placed on the assist 600 is in direct contact with the graphite substrate. Therefore, it is understood that the back surface 11b of the SiC single crystal substrate 11 is roughened. When such a situation occurs, when various components are manufactured in the subsequent steps, it is difficult to obtain electrical characteristics as expected from the excellent physical properties of the SiC epitaxial wafer, and in addition, in the inspection step, there is also a substrate adsorption error. After the disaster. When a member in which the graphite material is completely exposed is used, when the graphite material is in contact with the SiC single crystal substrate, the rubbed graphite becomes particles at the time of contact, and the surface state such as adhesion to the surface of the SiC epitaxial film is deteriorated. Therefore, the coating process is not applied to the substrate of the assister, but the structure in which the graphite exposes the entire auxiliary device is not solved. Of course, the elimination of the coating of TaC or SiC necessary for CVD deposition of SiC will cause defects.

於是，進一步發現了在使SiC磊晶膜沉積之際，作為用於彌補C/Si比降低的更加具體的手段，藉由將碳構件設置於特定的場所，可抑制晶圓面內載子濃度的偏差，使本發明完成。 Therefore, it has been further found that, as a more specific means for compensating for the reduction of the C/Si ratio at the time of depositing the SiC epitaxial film, by setting the carbon member to a specific place, the in-wafer carrier concentration of the wafer can be suppressed. The deviations allow the invention to be completed.

即，本發明為了解決上述課題而提供以下的手段。 That is, the present invention provides the following means in order to solve the above problems.

(1)一種SiC磊晶晶圓的製造裝置，其係利用化學氣相沉積法使SiC磊晶膜沉積於SiC基板的主面上，其特徵在於具備：搭載板，其具有凹狀收容部；輔助器(satellite)，其配置於前述凹狀收容部內，在上面載置SiC基板；及碳構件，其在前述凹狀收容部內，配置於比SiC基板下方的位置且不接觸到SiC基板的位置上。 (1) A device for manufacturing an SiC epitaxial wafer, wherein a SiC epitaxial film is deposited on a main surface of a SiC substrate by a chemical vapor deposition method, and is characterized in that: a mounting plate having a concave receiving portion; a holder disposed in the concave accommodating portion and having a SiC substrate placed thereon; and a carbon member disposed in a position below the SiC substrate and not in contact with the SiC substrate in the concave accommodating portion on.

(2)如(1)之SiC磊晶晶圓的製造裝置，其特徵為具備：基板保持環，其具有和SiC基板大致相同尺寸的開口部，並且配置成包圍SiC基板的側面；前述碳構件為配置於該基板保持環下面的環狀構件。 (2) The apparatus for manufacturing an SiC epitaxial wafer according to (1), comprising: a substrate holding ring having an opening portion having substantially the same size as the SiC substrate, and being disposed to surround a side surface of the SiC substrate; and the carbon member It is an annular member disposed under the substrate holding ring.

(3)如(1)之SiC磊晶晶圓的製造裝置，其特徵為前述碳構件配置於前述凹狀收容部的底面上。 (3) The apparatus for manufacturing an SiC epitaxial wafer according to (1), wherein the carbon member is disposed on a bottom surface of the concave accommodating portion.

(4)一種SiC磊晶晶圓的製造裝置，其特徵係利用化學氣相沉積法使SiC磊晶膜沉積於SiC基板的主面上，其特徵在於具有：搭載板，其具有凹狀收容部；輔助器，其配置於前述凹狀收容部內，在上面載置SiC基板；及前述輔助器係由以非碳材料披覆的碳基材構成，碳基材露出於不接觸到載置的SiC基板的位置的部分。 (4) A device for manufacturing a SiC epitaxial wafer, characterized in that a SiC epitaxial film is deposited on a main surface of a SiC substrate by a chemical vapor deposition method, and is characterized in that: a mounting plate having a concave receiving portion An auxiliary device disposed in the concave receiving portion and having a SiC substrate placed thereon; and the auxiliary device is made of a carbon substrate coated with a non-carbon material, and the carbon substrate is exposed to the SiC that is not in contact with the mounting The portion of the position of the substrate.

(5)如(4)之SiC磊晶晶圓的製造裝置，其特徵為前述輔助器具有：鏜孔部，其以不和SiC基板接觸的方式形成於其上面的中央部；及支持部，其配置成包圍該鏜孔部，支持SiC基板；前述鏜孔部底面的至少一部分，係碳基材露出，構成前述碳基材露出的部分。 (5) The apparatus for manufacturing an SiC epitaxial wafer according to (4), wherein the auxiliary device has a boring portion formed at a central portion of the SiC substrate so as not to be in contact with the SiC substrate; and a support portion; The SiC substrate is supported to surround the boring portion, and at least a part of the bottom surface of the boring portion is exposed to a carbon substrate to form a portion where the carbon substrate is exposed.

(6)如(4)或(5)中任一項之SiC磊晶晶圓的製造裝置，其特徵為前述輔助器背面的至少一部分，係碳基材露出，構成前述碳基材露出的部分。 (6) The apparatus for manufacturing an SiC epitaxial wafer according to any one of (4) or (5), wherein at least a part of the back surface of the auxiliary device is exposed to a carbon substrate, and the exposed portion of the carbon substrate is formed. .

(7)一種SiC磊晶晶圓的製造裝置，其係利用化學氣相沉積法使SiC磊晶膜沉積於SiC基板的主面上，其特徵在於具備：搭載板，其具有凹狀收容部；輔助器，其配置於前述凹狀收容部內，在上面載置SiC基板；原料氣體導入管，其用於供應SiC磊晶膜的原料氣體給載置 於前述輔助器上的SiC基板的主面上；及碳構件，其配置於前述原料氣體導入管的氣體導入口與前述輔助器之間的原料氣體的上游側。 (7) A device for producing a SiC epitaxial wafer, wherein a SiC epitaxial film is deposited on a main surface of a SiC substrate by a chemical vapor deposition method, and is characterized in that: a mounting plate having a concave receiving portion; An auxiliary device disposed in the concave accommodating portion, on which a SiC substrate is placed, and a material gas introduction pipe for supplying a material gas for supplying the SiC epitaxial film And a carbon member disposed on an upstream side of the material gas between the gas introduction port of the material gas introduction pipe and the auxiliary device.

(8)如(7)之SiC磊晶晶圓的製造裝置，其特徵為，具備複數個覆蓋構件，其覆蓋前述搭載板的上面；前述複數個覆蓋構件之中的一部分係由碳構成，此一部分的覆蓋構件構成前述碳構件。 (8) The apparatus for manufacturing an SiC epitaxial wafer according to (7), comprising: a plurality of covering members covering an upper surface of the mounting plate; and a part of the plurality of covering members is made of carbon. A part of the covering member constitutes the aforementioned carbon member.

(9)一種SiC磊晶晶圓的製造裝置，其係利用化學氣相沉積法使SiC磊晶膜沉積於SiC基板的主面上，其特徵在於具備：搭載板，其具有凹狀收容部；輔助器，其配置於前述凹狀收容部內，在上面載置SiC基板；及基板保持環，其由碳材料構成，具有和SiC基板大致相同尺寸的開口部，並且配置成包圍SiC基板的側面。 (9) A device for manufacturing an SiC epitaxial wafer, wherein a SiC epitaxial film is deposited on a main surface of a SiC substrate by a chemical vapor deposition method, and is characterized in that: a mounting plate having a concave receiving portion; The auxiliary device is disposed in the concave accommodating portion, and has a SiC substrate placed thereon; and a substrate holding ring made of a carbon material, having an opening portion having substantially the same size as the SiC substrate, and disposed to surround a side surface of the SiC substrate.

(10)一種SiC磊晶晶圓的製造方法，其特徵在於：將(1)至(9)中任一項之碳構件、碳基材或由碳材料構成的基板保持環設置於SiC磊晶晶圓的製造裝置上而製造SiC磊晶晶圓。 (10) A method for producing a SiC epitaxial wafer, characterized in that the carbon member, the carbon substrate or the substrate holding ring made of the carbon material according to any one of (1) to (9) is provided on the SiC epitaxial crystal A SiC epitaxial wafer is fabricated on a wafer fabrication apparatus.

依據本發明之SiC磊晶晶圓的製造裝置，採用在特定的位置上具備了供應碳的碳構件的構造。而且，在沉積於SiC基板上的SiC磊晶膜的外周部，藉由和原料氣體分開供應碳，可提高SiC磊晶膜外周部的C/Si比。藉此，可抑制此SiC磊晶膜面內的載子濃度的偏差。因此，可用簡便的構造的裝置使晶圓面內的載子濃度有效地均勻化，並可以良好的生產性製造在電氣特性方面優良的SiC磊晶晶圓。 According to the apparatus for manufacturing a SiC epitaxial wafer of the present invention, a structure in which a carbon member for supplying carbon is provided at a specific position is employed. Further, by supplying carbon separately from the material gas in the outer peripheral portion of the SiC epitaxial film deposited on the SiC substrate, the C/Si ratio of the outer peripheral portion of the SiC epitaxial film can be increased. Thereby, variations in the carrier concentration in the plane of the SiC epitaxial film can be suppressed. Therefore, the carrier concentration in the wafer surface can be effectively uniformized by a simple structure, and the SiC epitaxial wafer excellent in electrical characteristics can be manufactured with good productivity.

依據本發明之SiC磊晶晶圓的製造方法，藉由控制實際效果的C/Si比，可改善載子濃度的面內分布，所以可製成適合在電氣特性方面優良的元件製成的磊晶晶圓。 According to the method for manufacturing a SiC epitaxial wafer of the present invention, by controlling the C/Si ratio of the actual effect, the in-plane distribution of the carrier concentration can be improved, so that it can be made into a component suitable for electrical characteristics. Crystal wafer.

1‧‧‧製造裝置(SiC磊晶晶圓的製造裝置) 1‧‧‧Manufacturing device (manufacturing device for SiC epitaxial wafer)

2、202、302‧‧‧搭載板 2, 202, 302‧‧‧ loading board

2A‧‧‧旋轉軸 2A‧‧‧Rotary axis

2a‧‧‧上面 2a‧‧‧above

2b‧‧‧下面 2b‧‧‧ below

21‧‧‧基材 21‧‧‧Substrate

22‧‧‧披覆膜 22‧‧‧ Covered film

23、323‧‧‧凹狀收容部 23, 323‧‧‧ concave containment

28‧‧‧凹部 28‧‧‧ recess

23b‧‧‧底面 23b‧‧‧ bottom

3、103、113、203、303‧‧‧輔助器 3, 103, 113, 203, 303‧‧‧ aids

31‧‧‧基材 31‧‧‧Substrate

32‧‧‧披覆膜 32‧‧‧ Covered film

103a‧‧‧上面 103a‧‧‧above

113a‧‧‧表面 113a‧‧‧ surface

113b‧‧‧背面 113b‧‧‧Back

132a‧‧‧鏜孔部 132a‧‧‧镗孔部

133‧‧‧支持部 133‧‧‧Support Department

8、18、208‧‧‧碳構件 8, 18, 208‧‧‧ carbon components

108、118‧‧‧碳基材 108, 118‧‧‧ Carbon substrate

4、204‧‧‧氣體導入管 4, 204‧‧‧ gas introduction tube

6、206‧‧‧頂板 6, 206‧‧‧ top board

11SiC‧‧‧基板 11SiC‧‧‧ substrate

11a‧‧‧主面 11a‧‧‧Main face

12SiC‧‧‧磊晶膜 12SiC‧‧‧ epitaxial film

5‧‧‧原料氣體 5‧‧‧Material gases

9、309‧‧‧基板保持環 9, 309‧‧‧ substrate retention ring

209‧‧‧覆蓋構件 209‧‧‧ Covering components

C‧‧‧碳 C‧‧‧carbon

F‧‧‧原料氣體的氣流(箭形符號) F‧‧‧Flow of raw material gas (arrow symbol)

F1‧‧‧上游(原料氣體的氣流) F1‧‧‧ upstream (air flow of raw material gas)

第1圖為概要地說明本發明實施形態之SiC磊晶晶圓的製造裝置之圖，為顯示利用CVD法使SiC磊晶膜沉積於SiC基板主面上的裝置一例的概略圖。 Fig. 1 is a schematic view showing an example of an apparatus for manufacturing an SiC epitaxial wafer according to an embodiment of the present invention, and showing an example of an apparatus for depositing a SiC epitaxial film on a main surface of a SiC substrate by a CVD method.

第2圖為概要地說明本發明第一實施形態之SiC磊晶晶圓的製造裝置之圖，為顯示備置於製造裝置上的碳構件的配置一例的概略圖，(a)為在輔助器上載置有SiC基板的輔助器部分(包含輔助器與基板保持環等接近零件的部分)的剖面圖，(b)為輔助器部分的平面圖。 2 is a view schematically showing an apparatus for manufacturing a SiC epitaxial wafer according to the first embodiment of the present invention, and is a schematic view showing an example of arrangement of carbon members placed on a manufacturing apparatus, and (a) is uploaded on an auxiliary device. A cross-sectional view of the auxiliary portion of the SiC substrate (including a portion close to the component such as the auxiliary device and the substrate holding ring), and (b) is a plan view of the auxiliary portion.

第3圖為概要地說明本發明第一實施形態之SiC磊晶晶圓的製造裝置之圖，為顯示備置於製造裝置上的碳構件的配置之其他例的概略圖，(a)為在載置台的凹狀收容部與輔助器上載置有SiC基板的輔助器部分的剖面圖，(b)為輔助器部分的平面圖。 Fig. 3 is a view schematically showing an apparatus for manufacturing a SiC epitaxial wafer according to a first embodiment of the present invention, and is a schematic view showing another example of arrangement of carbon members placed on a manufacturing apparatus, and (a) is a A cross-sectional view of the auxiliary portion of the SiC substrate on which the concave accommodating portion and the auxiliary device are placed is placed, and (b) is a plan view of the auxiliary portion.

第4圖為概要地說明本發明第二實施形態之SiC磊晶晶圓的製造裝置之圖，為顯示備置於製造裝置上的碳構件的配置一例的概略圖，(a)為在輔助器上載置有SiC基板的輔助器部分的剖面圖，(b)為輔助器部分的平面圖。 4 is a view schematically showing an apparatus for manufacturing a SiC epitaxial wafer according to a second embodiment of the present invention, and is a schematic view showing an example of arrangement of carbon members placed on a manufacturing apparatus, and (a) is uploaded on an auxiliary device. A cross-sectional view of the auxiliary portion in which the SiC substrate is placed, and (b) is a plan view of the auxiliary portion.

第5圖為概要地說明本發明第二實施形態之SiC磊晶晶圓的製造裝置之圖，為顯示備置於製造裝置上的碳構件的配置之其他例的概略圖，(a)為輔助器的表面平面圖，(b)為輔助器的背面平面圖。 Fig. 5 is a view schematically showing a manufacturing apparatus of a SiC epitaxial wafer according to a second embodiment of the present invention, and is a schematic view showing another example of arrangement of carbon members placed on a manufacturing apparatus, and (a) is an auxiliary device. The surface plan view, (b) is the back plan view of the aid.

第6圖為概要地說明本發明第三實施形態之SiC磊晶晶圓的製造裝置之圖，為顯示利用CVD法使SiC磊晶膜沉積於SiC基板主面上的裝置之其他例的概略圖。 Fig. 6 is a view schematically showing an apparatus for manufacturing a SiC epitaxial wafer according to a third embodiment of the present invention, and is a schematic view showing another example of an apparatus for depositing a SiC epitaxial film on a main surface of a SiC substrate by a CVD method. .

第7圖為概要地說明本發明第四實施形態之SiC磊晶晶圓的製造裝置之圖，為顯示備置於製造裝置上的碳構件的配置一例的概略圖，為在載置台的凹狀收容部與輔助器上載置有SiC基板的輔助器部分的剖面圖。 FIG. 7 is a view schematically showing an apparatus for manufacturing a SiC epitaxial wafer according to a fourth embodiment of the present invention, and is a schematic view showing an example of arrangement of carbon members placed on a manufacturing apparatus, and is a concave housing on a mounting table. A cross-sectional view of the auxiliary portion on which the SiC substrate is placed is placed on the auxiliary unit.

第8圖為用於說明本發明的實施例1及實施例2之圖，(a)為顯示SiC磊晶晶圓半徑方向的載子濃度分布的圖表，(b)為SiC磊晶晶圓半徑方向的載子濃度對於晶圓中心的載子濃度之比的圖表。 Fig. 8 is a view for explaining the first embodiment and the second embodiment of the present invention, wherein (a) is a graph showing a carrier concentration distribution in the radial direction of the SiC epitaxial wafer, and (b) is a SiC epitaxial wafer radius. A plot of the ratio of carrier concentration in the direction to the carrier concentration at the center of the wafer.

第9圖為用於說明本發明的實施例3之圖，(a)為顯示SiC磊晶晶圓半徑方向的載子濃度分布的圖表，(b)為SiC磊晶晶圓半徑方向的載子濃度對於晶圓中心的載子濃度之比的圖表。 Fig. 9 is a view for explaining the third embodiment of the present invention, wherein (a) is a graph showing a carrier concentration distribution in the radial direction of the SiC epitaxial wafer, and (b) is a carrier in the radial direction of the SiC epitaxial wafer. A graph of the ratio of concentration to carrier concentration at the center of the wafer.

第10圖為概要地說明以往的SiC磊晶晶圓的製造裝置之圖。 Fig. 10 is a view schematically showing a manufacturing apparatus of a conventional SiC epitaxial wafer.

第11圖為概要地說明SiC磊晶晶圓的製造裝置之圖。 Fig. 11 is a view schematically showing a manufacturing apparatus of a SiC epitaxial wafer.

以下，就適用本發明之SiC磊晶晶圓的製造裝置及其製造方法，一面適當參照圖，一面詳細地說明。 Hereinafter, a manufacturing apparatus of the SiC epitaxial wafer of the present invention and a method of manufacturing the same will be described in detail with reference to the drawings.

為了容易理解本發明的特徵，在以下的說明中使用的圖面，為了方便起見，有時會放大顯示成為特徵的部分，各構成要素的尺寸比率等有時會和實際不同。在以下的說明中所例示的材料、尺寸等為一例，本發明並不受此等材料、尺寸等限定，可在不變更其要旨的範圍內適當地變更實施。 In order to facilitate the understanding of the features of the present invention, the drawings used in the following description may be enlarged and displayed as features for convenience, and the dimensional ratios of the respective constituent elements may be different from actual ones. The materials, dimensions, and the like exemplified in the following description are examples, and the present invention is not limited to such materials, dimensions, and the like, and can be appropriately modified and implemented without departing from the spirit and scope of the invention.

<SiC磊晶晶圓的製造裝置> <Manufacturer of SiC epitaxial wafer> (第一實施形態) (First embodiment)

以下，就本發明第一實施形態之SiC磊晶晶圓的製造裝置的一例進行說明。 Hereinafter, an example of a manufacturing apparatus of the SiC epitaxial wafer according to the first embodiment of the present invention will be described.

如第1圖及第2(a)圖所示，第一實施形態的製造裝置1為利用化學氣相沉積法使SiC磊晶膜12沉積於SiC基板11的主面11a上的裝置，如圖示例，為水平配置複數片晶圓(SiC基板)，使各晶圓公轉，並且以晶圓中心為軸而使晶圓本身自轉的水平自公轉型的磊晶沉積裝置。 As shown in Fig. 1 and Fig. 2(a), the manufacturing apparatus 1 of the first embodiment is a device for depositing the SiC epitaxial film 12 on the main surface 11a of the SiC substrate 11 by chemical vapor deposition. For example, an epitaxial deposition device in which a plurality of wafers (SiC substrates) are horizontally arranged, and each wafer is revolved, and the wafer itself is rotated to the level of self-rotation of the wafer itself.

第一實施形態之SiC磊晶晶圓的製造裝置1具備：搭載板2，其具有凹狀收容部23(參照第3圖)；輔助器3，其配置於此凹狀收容部23內，在上面載置SiC基板11；及碳構件8，其在此凹狀收容部23內，配置於比SiC基板11下方的位置且不接觸到SiC基板11的位置上。 The manufacturing apparatus 1 of the SiC epitaxial wafer according to the first embodiment includes a mounting plate 2 having a concave accommodating portion 23 (see FIG. 3), and an auxiliary device 3 disposed in the concave accommodating portion 23, The SiC substrate 11 and the carbon member 8 are placed on the upper surface of the concave accommodating portion 23 at a position below the SiC substrate 11 and are not in contact with the SiC substrate 11.

在第2(a)及(b)圖所示之例中，碳構件8被作為配置於基板保持環9下面的環狀構件。為了從其側面保持SiC基板11，此基板保持環9接近SiC基板11設置。 In the example shown in the second (a) and (b), the carbon member 8 is an annular member disposed under the substrate holding ring 9. In order to hold the SiC substrate 11 from its side, the substrate holding ring 9 is disposed close to the SiC substrate 11.

在搭載板2及輔助器3的上方配置有頂板6，在此頂板6上以貫穿其中央部6a的方式設有原料氣體導入管4，該原料氣體導入管4係用於供應原料氣體5給載置於輔助器3上的SiC基板11的主面11a上。在圖示例中，搭載板2的旋轉軸2A配置於原料氣體導入管4的正下面，以同軸設置此旋轉軸2A與原料氣體導入管4。 A top plate 6 is disposed above the mounting plate 2 and the auxiliary device 3, and the top plate 6 is provided with a material gas introduction pipe 4 for supplying the material gas 5 to the center portion 6a. It is placed on the main surface 11a of the SiC substrate 11 on the auxiliary device 3. In the example of the drawing, the rotating shaft 2A of the mounting plate 2 is disposed directly under the material gas introducing pipe 4, and the rotating shaft 2A and the material gas introducing pipe 4 are coaxially provided.

原料氣體5構成為從原料氣體導入管4供應給裝置中央，原料氣體朝向裝置的外周部流動。 The material gas 5 is configured to be supplied from the material gas introduction pipe 4 to the center of the device, and the material gas flows toward the outer peripheral portion of the device.

搭載板2為在以石墨為材料的基材21的表面上塗布披覆膜22而成的圓盤狀構件。在搭載板2的上面2a側，以包圍旋轉軸2A的方式設有用於保持輔助器3的複數個凹狀收容部23。在搭載板2的下面2b側，設有用於利用圖示省略的驅動機構使載置台旋轉驅動的旋轉軸2A。 The mounting plate 2 is a disk-shaped member obtained by coating a coating film 22 on the surface of a substrate 21 made of graphite. On the upper surface 2a side of the mounting plate 2, a plurality of concave accommodating portions 23 for holding the assisting device 3 are provided so as to surround the rotating shaft 2A. On the lower surface 2b side of the mounting plate 2, a rotating shaft 2A for rotationally driving the mounting table by a driving mechanism (not shown) is provided.

塗布搭載板2表面的披覆膜22可使用例如以往眾所周知的TaC或SiC等形成。 The coating film 22 on the surface on which the mounting board 2 is applied can be formed using, for example, TaC or SiC which are conventionally known.

輔助器3也和搭載板2同樣，為在以石墨為材料的基材31的表面上塗布披覆膜32而成的圓盤狀構件。塗布輔助器3表面的披覆膜32也和搭載板2同樣，可使用以往眾所周知的TaC或SiC等形成。 Similarly to the mounting plate 2, the auxiliary device 3 is a disk-shaped member obtained by coating a coating film 32 on the surface of a base material 31 made of graphite. Similarly to the mounting plate 2, the coating film 32 on the surface of the coating aid 3 can be formed using conventionally known TaC or SiC.

輔助器3收容於設於搭載板2的上面2a的凹狀收容部23內，可利用圖示省略的旋轉驅動機構而自 轉。藉此，輔助器3構成為藉由以搭載板2的旋轉軸2A為中心而公轉並且自轉，使SiC基板11自公轉。 The assister 3 is housed in the concave accommodating portion 23 provided on the upper surface 2a of the mounting plate 2, and can be self-illustrated by a rotation driving mechanism (not shown). turn. Thereby, the assister 3 is configured to revolve and rotate the SiC substrate 11 by revolving around the rotation axis 2A of the mounting plate 2.

頂板6係藉由配置成從上方覆蓋搭載板2及輔助器3，在頂板6與搭載板2及輔助器3之間形成反應空間。 The top plate 6 is disposed so as to cover the mounting plate 2 and the auxiliary device 3 from above, and a reaction space is formed between the top plate 6 and the mounting plate 2 and the auxiliary device 3.

頂板6也和搭載板2及輔助器3同樣，為被塗布以石墨為材料的基材表面而成的圓盤狀構件。塗布頂板6表面的披覆膜也和搭載板2同樣，可使用以往眾所周知的TaC或SiC等形成。 Similarly to the mounting plate 2 and the auxiliary device 3, the top plate 6 is a disk-shaped member which is coated with a surface of a base material made of graphite. Similarly to the mounting plate 2, the coating film on the surface of the top plate 6 can be formed using conventionally known TaC or SiC.

如上述，關於頂板6，在中央部6a的位置上設有原料氣體導入管4。 As described above, the top plate 6 is provided with the material gas introduction pipe 4 at the position of the center portion 6a.

原料氣體導入管4係藉由從圖示省略的外部容器等導入原料氣體，將原料氣體送出到頂板6與搭載板2及輔助器3之間的空間，供應原料氣體5給SiC基板11的主面11a上。就此種原料氣體5而言，可使用一般用作SiC磊晶膜原料的含有碳化氫系氣體及矽烷系氣體的原料氣體，具體而言，可使用C3H8作為碳化氫系氣體，使用SiH4作為矽烷系氣體。 The material gas introduction pipe 4 is introduced into the space between the top plate 6 and the mounting plate 2 and the auxiliary device 3 by introducing the material gas from an external container or the like, which is not shown, and supplies the material gas 5 to the main body of the SiC substrate 11. On face 11a. As the material gas 5, a material gas containing a hydrocarbon-based gas or a decane-based gas which is generally used as a raw material of the SiC epitaxial film can be used. Specifically, C 3 H 8 can be used as the hydrocarbon-based gas, and SiH can be used. 4 as a decane-based gas.

如第2(a)圖所示之例，碳構件8位於比SiC基板11的主面11a下方，並且和SiC基板11以非接觸設置。 As an example shown in FIG. 2(a), the carbon member 8 is located below the main surface 11a of the SiC substrate 11, and is provided in non-contact with the SiC substrate 11.

藉由將碳構件8設於比SiC基板11的主面11a下方，即使是因和高溫氣氛中的H2反應等而從構成碳構件8的石墨產生碳的情況，也可以防止碳附著於SiC基板11的主面11a上。 By providing the carbon member 8 below the main surface 11a of the SiC substrate 11, it is possible to prevent carbon from adhering to SiC even when carbon is generated from graphite constituting the carbon member 8 due to reaction with H 2 in a high-temperature atmosphere or the like. On the main surface 11a of the substrate 11.

藉由將由石墨構成的碳構件8設置成和SiC基板11的背面成為非接觸，可防止在SiC基板11的表面上產生粗糙等。 By providing the carbon member 8 made of graphite in a non-contact with the back surface of the SiC substrate 11, it is possible to prevent occurrence of roughness or the like on the surface of the SiC substrate 11.

從防止粒子產生的觀點，碳構件8較佳為設置在其與其他的構件等之間不會滑動之處。 From the viewpoint of preventing generation of particles, the carbon member 8 is preferably provided so as not to slide between it and other members.

碳構件8較佳為以包圍SiC基板11的方式配置成環狀。藉由以包圍SiC基板11的方式配置成環狀，遍及整個SiC基板11的外周都可均勻地供應碳，可抑制SiC基板11面內的載子濃度的偏差。 The carbon member 8 is preferably arranged in a ring shape so as to surround the SiC substrate 11. By arranging the ring shape so as to surround the SiC substrate 11, carbon can be uniformly supplied over the entire circumference of the entire SiC substrate 11, and variation in carrier concentration in the plane of the SiC substrate 11 can be suppressed.

如在第2(a)圖中所示，碳構件8的表面較佳為以不使其和原料氣體5直接接觸的方式被覆蓋其表面。當在SiC基板11上形成磊晶膜12之際，磊晶沉積也在碳構件8的原料氣體5側的表面上進行。因此，若不設置覆蓋物，則磊晶膜會沉積於碳構件8的原料氣體5側的表面上，阻礙從碳構件8產生碳，碳的供應效率會經時地變化。 As shown in Fig. 2(a), the surface of the carbon member 8 is preferably covered on the surface so as not to be in direct contact with the material gas 5. When the epitaxial film 12 is formed on the SiC substrate 11, epitaxial deposition is also performed on the surface of the carbon member 8 on the side of the material gas 5 side. Therefore, if the covering is not provided, the epitaxial film is deposited on the surface of the carbon member 8 on the side of the material gas 5, and carbon generation from the carbon member 8 is inhibited, and the supply efficiency of carbon changes with time.

基板保持環9為用於保持成SiC基板11不橫向滑動的構件。基板保持環9使用以SiC或TaC等塗布的石墨或碳化矽等，以免碳露出。如在第2(a)圖中所示，在第一實施形態中，同時也作為碳構件8的原料氣體側的表面的覆蓋物發揮作用。在第2圖所示之例中，基板保持環9係經由碳構件8而配置於形成於輔助器3外周的比上面低的階差部上。 The substrate holding ring 9 is a member for holding the SiC substrate 11 not to slide laterally. The substrate holding ring 9 is made of graphite or tantalum carbide coated with SiC or TaC or the like to prevent carbon from being exposed. As shown in the second embodiment (a), in the first embodiment, the cover of the surface of the carbon member 8 on the material gas side also functions. In the example shown in FIG. 2, the substrate holding ring 9 is disposed on the step portion formed on the outer circumference of the assister 3 and lower than the upper surface via the carbon member 8.

為了防止碳的供應效率的經時變化，此基板保持環9較佳為完全覆蓋碳構件8的原料氣體5側的表面。 In order to prevent a temporal change in the supply efficiency of carbon, the substrate holding ring 9 preferably completely covers the surface of the carbon member 8 on the side of the material gas 5 side.

基板保持環9較佳為未和SiC基板11及輔助器3完全地密合。若此等構件互相完全密合，就不能充分確保在碳構件8產生的碳的流路，無法適當地供應碳給原料氣體5側。 The substrate holding ring 9 is preferably not completely adhered to the SiC substrate 11 and the auxiliary device 3. When the members are completely in close contact with each other, the flow path of the carbon generated in the carbon member 8 cannot be sufficiently ensured, and the carbon can not be appropriately supplied to the side of the material gas 5 .

就碳構件8的材料即石墨而言，雖然不受特別限制，但使用高純度的石墨更好，以免因和氫的反應而產生碳之際，產生碳以外的雜質。 The graphite, which is a material of the carbon member 8, is not particularly limited, but it is more preferable to use high-purity graphite so as not to generate impurities other than carbon when carbon is generated by the reaction with hydrogen.

碳構件除了在第2圖中所示之外，也可以如第3(a)、(b)圖所例示，設置於搭載板2上，設置於凹狀收容部23的底面上。碳構件18較佳為配置成俯視包圍輔助器3的外周端部。藉由配置成包圍輔助器3的外周端部，遍及SiC基板11的外周都可均勻地供應碳，可抑制SiC基板11面內的載子濃度的不均勻性。 The carbon member may be provided on the mounting plate 2 and provided on the bottom surface of the concave housing portion 23, as shown in Fig. 3(a) and (b). The carbon member 18 is preferably arranged to surround the outer peripheral end portion of the assister 3 in plan view. By arranging the outer peripheral end portion of the auxiliary device 3 so as to surround the outer periphery of the SiC substrate 11, carbon can be uniformly supplied, and the unevenness of the carrier concentration in the plane of the SiC substrate 11 can be suppressed.

其形狀可以構成為C型環狀，即圓弧狀，也可以構成為如第3(b)圖所示的O型環狀。 The shape may be a C-shaped ring shape, that is, an arc shape, or may be configured as an O-ring as shown in Fig. 3(b).

碳構件18較佳為在輔助器3在凹狀收容部23內自轉之際的滑動地方外配置碳構件18。 In the carbon member 18, it is preferable that the carbon member 18 is disposed outside the sliding portion when the assister 3 is rotated in the concave accommodating portion 23.

具體而言，如在第3圖中所示，可在搭載板2的凹狀收容部23的底面23b上設置收容碳構件18的凹部28。若是此構造，則在凹部28內設置碳構件18，該凹部28係當輔助器3自轉之際，位於比輔助器3的下面3b摩擦的凹狀收容部23的底面23b低的位置。因此，可避免碳構件18和輔助器3的下面3b摩擦，可抑制粒子的產生。因此，碳構件18的高度較佳為比凹部28的深度低。 Specifically, as shown in FIG. 3, the concave portion 28 in which the carbon member 18 is housed can be provided on the bottom surface 23b of the concave accommodating portion 23 of the mounting plate 2. According to this configuration, the carbon member 18 is provided in the recessed portion 28, and the recessed portion 28 is located lower than the bottom surface 23b of the concave accommodating portion 23 which is rubbed against the lower surface 3b of the assister 3 when the assister 3 is rotated. Therefore, the friction between the carbon member 18 and the lower surface 3b of the assister 3 can be avoided, and generation of particles can be suppressed. Therefore, the height of the carbon member 18 is preferably lower than the depth of the recess 28.

在第3圖所示之例中，基板保持環9係配置於形成於輔助器3外周的比上面低的階差部上。 In the example shown in FIG. 3, the substrate holding ring 9 is disposed on a step portion formed on the outer circumference of the assister 3 and lower than the upper surface.

輔助器3的外徑與凹狀收容部23的內徑設定為大致相同的尺寸，較佳為凹狀收容部23稍大。若凹狀收容部23的大小超過輔助器3的話，當輔助器3自轉之際，輔助器3就會橫向滑動，無法得到均勻的SiC磊晶膜12。另一方面，若輔助器3與凹狀收容部23為相同，就不能充分確保供應從碳構件18產生的碳給原料氣體5側的流路，無法適當地供應碳。 The outer diameter of the assister 3 and the inner diameter of the concave accommodating portion 23 are set to be substantially the same size, and it is preferable that the concave accommodating portion 23 is slightly larger. When the size of the concave accommodating portion 23 exceeds the assisting device 3, when the assisting device 3 rotates, the assisting device 3 slides laterally, and a uniform SiC epitaxial film 12 cannot be obtained. On the other hand, when the assister 3 and the concave accommodating portion 23 are the same, the flow of the carbon generated from the carbon member 18 to the source gas 5 side cannot be sufficiently ensured, and carbon cannot be appropriately supplied.

在第一實施形態的製造裝置1方面，係藉由從原料氣體導入管4向下方供應原料氣體5，從載置於輔助器3上的SiC基板11的外周端部，以通過SiC基板11的主面11a上的方式供應原料氣體5(參照第2(a)圖)。然後，藉由一面利用設於搭載板2下方的圖示省略的由高頻線圈等構成的加熱手段將SiC基板11維持於高溫，一面使磊晶材料堆積於此基板上，形成磊晶膜。 In the manufacturing apparatus 1 of the first embodiment, the source gas 5 is supplied downward from the material gas introduction pipe 4, and passes through the SiC substrate 11 from the outer peripheral end portion of the SiC substrate 11 placed on the auxiliary device 3. The material gas 5 is supplied in a manner on the main surface 11a (see Fig. 2(a)). Then, the epitaxial material is deposited on the substrate while maintaining the SiC substrate 11 at a high temperature by a heating means including a high-frequency coil or the like, which is omitted from the drawing below the mounting plate 2, to form an epitaxial film.

此時，如第2(a)圖所示，隨著圖示省略的加熱手段的加熱，從由石墨構成的碳構件8產生碳(C)，朝向原料氣體5的氣流的上游側，即第2圖中所示的箭形符號F的F1側供應碳，藉此提高SiC磊晶膜12的上游(F1)側的C/Si比。由於輔助器3自轉著，所以在SiC磊晶膜方面，氣流的上游側成為SiC基板的外周部。 At this time, as shown in the second figure (a), carbon (C) is generated from the carbon member 8 made of graphite, and the upstream side of the gas flow toward the material gas 5 is generated by the heating of the heating means (not shown). The F1 side of the arrow symbol F shown in Fig. 2 supplies carbon, thereby increasing the C/Si ratio on the upstream (F1) side of the SiC epitaxial film 12. Since the assistor 3 rotates, the upstream side of the airflow becomes the outer peripheral portion of the SiC substrate in terms of the SiC epitaxial film.

如上述，通常構成原料氣體5的碳化氫系氣體，由於分解速度比矽烷系氣體所含的Si慢，所以在位於原料氣體5的氣流上游的F1的SiC磊晶膜12的外周部，傾向於C濃度變低。 As described above, the hydrocarbon gas constituting the source gas 5 tends to be slower than the Si contained in the decane-based gas, and therefore tends to be on the outer peripheral portion of the SiC epitaxial film 12 of F1 located upstream of the gas stream of the source gas 5. The C concentration becomes low.

相對於此，依據本發明的製造裝置1，藉由採用具備碳構件8的上述構造，朝向原料氣體5的氣流的上游側供應碳，提高SiC磊晶膜12的外周部附近的C/Si比，使SiC磊晶膜12沉積。藉此，可抑制起因於構成原料氣體5的各成分的分解速度不同的SiC磊晶膜12面內的C/Si比的偏差。如此，隨著整個SiC磊晶膜12面內的氣體的C/Si比的位置依存性的減低，SiC磊晶膜12的載子濃度的偏差也減低。 On the other hand, in the manufacturing apparatus 1 of the present invention, carbon is supplied to the upstream side of the gas flow of the material gas 5 by the above-described structure including the carbon member 8, and the C/Si ratio in the vicinity of the outer peripheral portion of the SiC epitaxial film 12 is increased. The SiC epitaxial film 12 is deposited. Thereby, variation in the C/Si ratio in the plane of the SiC epitaxial film 12 which is caused by the decomposition speed of each component constituting the source gas 5 can be suppressed. As described above, as the positional dependence of the C/Si ratio of the gas in the surface of the entire SiC epitaxial film 12 is reduced, the variation in the carrier concentration of the SiC epitaxial film 12 is also reduced.

如本實施形態之自公轉型裝置的情況，氣體從中央向公轉的搭載板的外周側擴展，原料氣體也被逐漸分解、消耗，所以SiC磊晶膜的沉積速度，係越往搭載板的外周部就越小。因此，若著眼於SiC基板一方側的端部，則在中心側時的沉積方面，幫助較大。雖然在輔助器自轉時某種程度被平均化，但就實質的沉積條件而言，比較晶圓的中心部與外周部，晶圓外周部成為氣體的上游側。 In the case of the self-conversion device of the present embodiment, the gas spreads from the center to the outer peripheral side of the mounting plate, and the material gas is gradually decomposed and consumed. Therefore, the deposition rate of the SiC epitaxial film is further toward the outer peripheral portion of the mounting plate. The smaller it is. Therefore, focusing on the end portion on the one side of the SiC substrate contributes to the deposition on the center side. Although the auxiliary device is averaged to some extent when it is rotated, the actual peripheral deposition conditions are compared with the center portion and the outer peripheral portion of the wafer, and the outer peripheral portion of the wafer becomes the upstream side of the gas.

(第二實施形態) (Second embodiment)

第二實施形態的製造裝置，係僅輔助器的構造和第一實施形態的製造裝置1不同，其他的構造可使用和第一實施形態的製造裝置1同樣的構造。 In the manufacturing apparatus of the second embodiment, only the structure of the assister is different from that of the manufacturing apparatus 1 of the first embodiment, and other structures can be used in the same configuration as the manufacturing apparatus 1 of the first embodiment.

第二實施形態的輔助器係由碳基材構成，以非碳材料披覆，在不接觸到載置的SiC基板的位置上具有碳基材露出的部分。 The assister of the second embodiment is made of a carbon substrate and is covered with a non-carbon material, and has a portion where the carbon substrate is exposed without contacting the placed SiC substrate.

就其一例而言，如第4(a)及(b)圖所示，具有：鏜孔部132a，其以不和SiC基板11接觸的方式形 成於輔助器103的上面103a的中央部；及支持部133，其配置成包圍該鏜孔部132a，支持SiC基板11，鏜孔部132a底面的至少一部分，係碳基材108露出。 As an example, as shown in FIGS. 4(a) and 4(b), there is a pupil portion 132a which is formed in such a manner as not to be in contact with the SiC substrate 11. The central portion of the upper surface 103a of the assisting device 103; and the supporting portion 133 are disposed to surround the boring portion 132a, and support the SiC substrate 11, and at least a part of the bottom surface of the boring portion 132a is exposed to the carbon substrate 108.

藉由使用支持部133，使碳基材108與SiC基板11不直接接觸，可避免污染SiC基板11的背面。 By using the support portion 133, the carbon substrate 108 and the SiC substrate 11 are not in direct contact with each other, and contamination of the back surface of the SiC substrate 11 can be avoided.

第4(a)圖所示，若載置SiC基板11，則碳基材108位於以輔助器103、SiC基板11及支持部133包圍的空間內。因此，在碳基材108產生的碳被封閉於此空間內，為了防止無法適當地供應碳給原料氣體5，支持部133較佳為不遍及鏜孔部132a的全周配置，而離散地配置。 As shown in FIG. 4( a ), when the SiC substrate 11 is placed, the carbon substrate 108 is placed in a space surrounded by the assist 103 , the SiC substrate 11 , and the support portion 133 . Therefore, the carbon generated in the carbon substrate 108 is enclosed in the space, and in order to prevent the carbon material from being supplied to the material gas 5, the support portion 133 is preferably disposed not in the entire circumference of the pupil portion 132a. .

在第4圖所示之例中，基板保持環9係配置於形成於輔助器3外周的比上面低的階差部上。 In the example shown in Fig. 4, the substrate holding ring 9 is disposed on a step portion formed on the outer circumference of the assister 3 and lower than the upper surface.

也可以如第5(a)、(b)圖所例示，形成為以下構造：碳基材118在和輔助器113的設置SiC基板11的表面113a相反側的背面113b的至少一部分露出。 As exemplified in FIGS. 5( a ) and 5 ( b ), the carbon substrate 118 may be exposed at least in part to the back surface 113 b on the side opposite to the surface 113 a of the auxiliary illuminator 113 on which the SiC substrate 11 is provided.

在採用碳基材118露出輔助器的背面113b全面的構造時，當輔助器113自轉之際，認為碳基材118會摩擦而產生粒子。因此，不使背面113b全面露出較好。若不使背面全面露出，則在露出的碳基材118與輔助器113的背面之間因有披覆膜程度的厚度之差，所以即使輔助器113自轉，也可以避免碳基材118摩擦。也可以形成為以下構造：在輔助器113的背面113b具有如第4圖所示的鏜孔部與支持部，碳基材在鏜孔部的一部分露出。 When the carbon substrate 118 is used to expose the entire structure of the back surface 113b of the assister, when the assister 113 rotates, the carbon substrate 118 is considered to be rubbed to generate particles. Therefore, it is preferable not to expose the back surface 113b in its entirety. If the back surface is not completely exposed, the thickness of the exposed carbon substrate 118 and the back surface of the assister 113 is different depending on the degree of the coating film. Therefore, even if the assister 113 rotates, the carbon substrate 118 can be prevented from rubbing. The back surface 113b of the assister 113 may have a boring portion and a support portion as shown in Fig. 4, and the carbon substrate may be exposed at a part of the boring portion.

在第一實施形態中，準備碳構件8作為以往用於成膜的製造裝置備有的構件以外的另外的構件， 相對於此，在第二實施形態中，加工以往的製造裝置備有的輔助器，使碳基材108露出作為碳供應源之點與第一實施形態不同。 In the first embodiment, the carbon member 8 is prepared as another member other than the member provided in the conventional manufacturing apparatus for film formation. On the other hand, in the second embodiment, the auxiliary device provided in the conventional manufacturing apparatus is different from the first embodiment in that the carbon substrate 108 is exposed as a carbon supply source.

在第二實施形態的製造裝置方面，和第一實施形態的製造裝置同樣，係藉由一面利用設於搭載板2下方的由高頻線圈等構成的加熱手段將SiC基板11維持於高溫，一面使磊晶材料堆積於此基板上，成膜磊晶膜。 In the manufacturing apparatus of the second embodiment, the SiC substrate 11 is maintained at a high temperature by a heating means including a high-frequency coil or the like provided under the mounting plate 2, similarly to the manufacturing apparatus of the first embodiment. The epitaxial material is deposited on the substrate to form an epitaxial film.

此時，從碳基材108產生碳。由於鏜孔部132a成為以SiC基板11蓋上的狀態，所以產生的碳從支持部133的間隙出現。如此，藉由將產生的碳供應給SiC基板11的外周部(即原料氣體5的上游側)，可提高SiC磊晶膜12的外周部的C/Si比。 At this time, carbon is generated from the carbon substrate 108. Since the pupil portion 132a is in a state of being covered with the SiC substrate 11, the generated carbon appears from the gap of the support portion 133. As described above, by supplying the generated carbon to the outer peripheral portion of the SiC substrate 11 (that is, the upstream side of the source gas 5), the C/Si ratio of the outer peripheral portion of the SiC epitaxial film 12 can be increased.

(第三實施形態) (Third embodiment)

第三實施形態的製造裝置，係與第一實施形態的製造裝置在以下之點不同：第一實施形態的製造裝置1的碳供應源不是配置於輔助器的附近，而是配置於原料氣體的更上游側即氣體導入口與輔助器之間。其他的構造可使用和第一實施形態的製造裝置1同樣的構造。 The manufacturing apparatus of the third embodiment differs from the manufacturing apparatus of the first embodiment in that the carbon supply source of the manufacturing apparatus 1 of the first embodiment is disposed not in the vicinity of the assister but in the raw material gas. The upstream side is between the gas inlet and the auxiliary device. Other configurations can be the same as those of the manufacturing apparatus 1 of the first embodiment.

第三實施形態的製造裝置具備：搭載板202，其具有凹狀收容部；輔助器203，其配置於凹狀收容部內，在上面載置SiC基板11；原料氣體導入管204，其用於供應SiC磊晶膜12的原料氣體5給載置於輔助器203上的SiC基板11的主面上11a；及碳構件208，其配置於 前述原料氣體導入管204的氣體導入口與前述輔助器203之間的原料氣體5的上游側。 The manufacturing apparatus according to the third embodiment includes a mounting plate 202 having a concave accommodating portion, and an assisting device 203 disposed in the concave accommodating portion, on which the SiC substrate 11 is placed, and a material gas introducing pipe 204 for supplying The material gas 5 of the SiC epitaxial film 12 is applied to the main surface 11a of the SiC substrate 11 placed on the auxiliary device 203; and the carbon member 208 is disposed at The gas introduction port of the source gas introduction pipe 204 and the auxiliary device 203 are upstream of the source gas 5 .

第6圖為顯示第三實施形態的製造裝置一例的概要圖。在第6圖中顯示的第三實施形態的製造裝置為在第1圖中顯示的第一實施形態的製造裝置1的變形例。 Fig. 6 is a schematic view showing an example of a manufacturing apparatus of the third embodiment. The manufacturing apparatus of the third embodiment shown in Fig. 6 is a modification of the manufacturing apparatus 1 of the first embodiment shown in Fig. 1.

搭載板202、輔助器203等可使用和第一實施形態同樣的構件。頂板206以虛線表示，以便幫助理解。 The same member as that of the first embodiment can be used for the mounting plate 202, the assister 203, and the like. The top plate 206 is shown in dashed lines to aid understanding.

碳構件208配置於原料氣體導入管204的氣體導入口與輔助器203之間的原料氣體5的上游側。若在此範圍內設置碳構件208，則可利用原料氣體5的氣流，朝向SiC磊晶膜12的外周部(即上游側)供應成膜時產生的碳。因此，可抑制起因於構成原料氣體5的各成分的分解速度之不同的SiC磊晶膜12面內的氣體的C/Si比的偏差。如此，隨著整個SiC磊晶膜12面內的氣體的C/Si比的位置依存性的減低，SiC磊晶膜12的載子濃度的偏差也減低。 The carbon member 208 is disposed on the upstream side of the source gas 5 between the gas introduction port of the source gas introduction pipe 204 and the assister 203. When the carbon member 208 is provided in this range, the carbon generated at the time of film formation can be supplied to the outer peripheral portion (i.e., the upstream side) of the SiC epitaxial film 12 by the gas flow of the material gas 5. Therefore, variations in the C/Si ratio of the gas in the plane of the SiC epitaxial film 12 due to the difference in the decomposition speed of each component constituting the source gas 5 can be suppressed. As described above, as the positional dependence of the C/Si ratio of the gas in the surface of the entire SiC epitaxial film 12 is reduced, the variation in the carrier concentration of the SiC epitaxial film 12 is also reduced.

一般在搭載板202的表面上設有覆蓋構件209。此乃由於磊晶沉積即使在SiC基板11上以外的部分也會產生，所以成膜了複數次之際，為了容易交換堆積於搭載板202上的膜而使用此覆蓋構件209。 A cover member 209 is generally provided on the surface of the mounting plate 202. This is because the epitaxial deposition occurs even in the portion other than the SiC substrate 11. Therefore, the cover member 209 is used in order to easily exchange the film deposited on the mounting plate 202 at the time of film formation.

因此，較佳為以此覆蓋構件209之中的一部分為由碳構成的構件，使其起作用作為碳構件208。此情況，無需重新另外形成設置碳構件的空間，即使在以往的裝置中，也可以容易適用。 Therefore, it is preferable that a part of the covering member 209 is a member made of carbon to function as the carbon member 208. In this case, it is not necessary to newly form a space in which the carbon member is provided, and it can be easily applied even in a conventional apparatus.

(第四實施形態) (Fourth embodiment)

第四實施形態的製造裝置係與第一實施形態的基板保持環9不同，其基板保持環具有碳構件。其他的構造可使用和第一實施形態的製造裝置1同樣的構造。 The manufacturing apparatus of the fourth embodiment is different from the substrate holding ring 9 of the first embodiment in that the substrate holding ring has a carbon member. Other configurations can be the same as those of the manufacturing apparatus 1 of the first embodiment.

第7圖為顯示第四實施形態的製造裝置一例的概要圖。第四實施形態的製造裝置具備：搭載板302，其具有凹狀收容部；輔助器303，其配置於凹狀收容部323內，在上面載置SiC基板11；及基板保持環309，其由碳材料構成，具有和SiC基板11大致相同尺寸的開口部，並且配置成包圍SiC基板11的側面。 Fig. 7 is a schematic view showing an example of a manufacturing apparatus of the fourth embodiment. The manufacturing apparatus according to the fourth embodiment includes a mounting plate 302 having a concave accommodating portion, and an auxiliary 303 disposed in the concave accommodating portion 323, on which the SiC substrate 11 and the substrate holding ring 309 are placed. The carbon material has an opening portion having substantially the same size as the SiC substrate 11 and is disposed to surround the side surface of the SiC substrate 11.

在第四實施形態中，基板保持環309為由碳材料構成，作為碳的供應源使用。僅將保持載置於輔助器303上的SiC基板11的環變更為碳構件即可，即使在以往的裝置中，也可以容易適用。 In the fourth embodiment, the substrate holding ring 309 is made of a carbon material and used as a supply source of carbon. It is only necessary to change the ring of the SiC substrate 11 placed on the assisting device 303 to a carbon member, and it can be easily applied even in a conventional device.

由碳材料構成的基板保持環309，較佳為只將其原料氣體5側的表面以披覆膜披覆。披覆膜較佳為為SiC、TaC等。藉由披覆此表面，在磊晶沉積中，即使磊晶膜沉積於由碳材料構成的基板保持環309上，其沉積的膜也不會阻礙碳的供應，可經時地使碳的供應量成為一定。 The substrate holding ring 309 made of a carbon material preferably has only the surface on the side of the material gas 5 covered with a coating film. The coating film is preferably SiC, TaC or the like. By coating the surface, in the epitaxial deposition, even if the epitaxial film is deposited on the substrate holding ring 309 made of a carbon material, the deposited film does not hinder the supply of carbon, and the carbon supply can be supplied over time. The amount becomes certain.

由於由碳材料構成的基板保持環309由碳材料構成，所以在成膜時會產生碳。由於由碳材料構成的基板保持環309位於SiC基板11的外周部，所以供應產生的碳給SiC基板11的外周部(即原料氣體5的上游 側)，可提高SiC磊晶膜12的外周部附近的氣體的C/Si比。藉此，抑制起因於構成原料氣體5的各成分的分解速度不同的SiC磊晶膜12面內的C/Si比的偏差。如此，隨著整個SiC磊晶膜12面內的氣體的C/Si比的位置依存性的減低，SiC磊晶膜12的載子濃度的偏差也減低。 Since the substrate holding ring 309 made of a carbon material is made of a carbon material, carbon is generated at the time of film formation. Since the substrate holding ring 309 made of a carbon material is located at the outer peripheral portion of the SiC substrate 11, the generated carbon is supplied to the outer peripheral portion of the SiC substrate 11 (i.e., upstream of the material gas 5). On the side, the C/Si ratio of the gas in the vicinity of the outer peripheral portion of the SiC epitaxial film 12 can be increased. Thereby, variations in the C/Si ratio in the plane of the SiC epitaxial film 12 which are caused by the decomposition speeds of the respective components constituting the source gas 5 are suppressed. As described above, as the positional dependence of the C/Si ratio of the gas in the surface of the entire SiC epitaxial film 12 is reduced, the variation in the carrier concentration of the SiC epitaxial film 12 is also reduced.

當輔助器303自轉之際，要考量SiC基板11的側面係接觸到由碳材料構成的基板保持環309，遭受污染。然而，因精整完成污染止於側面，所以SiC磊晶膜12面內的許多部分可用作載子濃度均勻的SiC磊晶膜。 When the assister 303 rotates, it is considered that the side surface of the SiC substrate 11 is in contact with the substrate holding ring 309 made of a carbon material, and is contaminated. However, since the finishing finish is contaminated on the side, many portions in the plane of the SiC epitaxial film 12 can be used as a SiC epitaxial film having a uniform carrier concentration.

(作用效果) (Effect)

依據本發明之SiC磊晶晶圓的製造裝置1，採用以下構造：具備碳原子供應構件(碳構件、碳基材、由碳材料構成的基板保持環)，該碳原子供應構件係將碳的供應源和SiC基板11背面以不接觸的方式設置，朝向從氣體供應部4供應的原料氣體5的上游側供應碳。而且，在沉積於SiC基板11上的SiC磊晶膜12的外周部，藉由控制成提高C/Si比，可抑制此SiC磊晶膜12面內的載子濃度的偏差。因此，不設置特別的設備，就可用簡便的構造的裝置使晶圓面內的載子濃度有效地均勻化，可以良好的生產性製造在電氣特性方面優良的SiC磊晶晶圓10。 The apparatus 1 for manufacturing an SiC epitaxial wafer according to the present invention has a configuration in which a carbon atom supply member (a carbon member, a carbon substrate, a substrate holding ring made of a carbon material) is provided, and the carbon atom supply member is carbon. The supply source and the back surface of the SiC substrate 11 are disposed in a non-contact manner, and carbon is supplied toward the upstream side of the material gas 5 supplied from the gas supply portion 4. Further, by controlling the increase in the C/Si ratio on the outer peripheral portion of the SiC epitaxial film 12 deposited on the SiC substrate 11, variations in the carrier concentration in the plane of the SiC epitaxial film 12 can be suppressed. Therefore, the carrier concentration in the wafer surface can be effectively uniformized by a simple structure without providing a special device, and the SiC epitaxial wafer 10 excellent in electrical characteristics can be manufactured with good productivity.

<SiC磊晶晶圓> <SiC epitaxial wafer>

如第2圖中所示，由本發明之SiC磊晶晶圓的製造裝置或其製造方法製造的SiC磊晶晶圓，係在 SiC基板11的主面11a上形成SiC磊晶膜12而成，係用於各種半導體元件的晶圓。主面11a作為C面、作為Si面都可以。相較於Si面，C面在進行摻雜時，易受C/Si比的影響，得到載子濃度均勻的晶圓更加困難。控制本發明之C/Si比而載子濃度改善的方法，在C面方面發揮更加顯著的效果。 As shown in FIG. 2, the SiC epitaxial wafer manufactured by the apparatus for manufacturing a SiC epitaxial wafer of the present invention or the method of manufacturing the same is The SiC epitaxial film 12 is formed on the main surface 11a of the SiC substrate 11, and is used for wafers of various semiconductor elements. The main surface 11a may be a C surface or a Si surface. Compared with the Si surface, the C surface is susceptible to the C/Si ratio when doping, and it is more difficult to obtain a wafer having a uniform carrier concentration. The method of controlling the C/Si ratio of the present invention and improving the carrier concentration exerts a more remarkable effect on the C surface.

[SiC基板] [SiC substrate]

用於SiC磊晶晶圓的SiC基板11可藉由下述製造：例如，將由昇華法等製作的SiC塊狀單晶錠的外周磨削而加工成圓柱狀後，利用線鋸等切片加工成圓板狀，將外周部去角後精整完成為預定的直徑。就此時的SiC塊狀單晶體而言，任何多型單晶體都可以使用，可使用主要被採用的4H-SiC作為用於製作實用的SiC元件的SiC塊狀單晶體。 The SiC substrate 11 used for the SiC epitaxial wafer can be produced by, for example, grinding the outer circumference of a SiC bulk single crystal ingot produced by a sublimation method or the like into a cylindrical shape, and then slicing it by a wire saw or the like. In the shape of a disk, the outer peripheral portion is chamfered and finished to a predetermined diameter. In the case of the SiC bulk single crystal at this time, any poly type single crystal can be used, and the mainly used 4H-SiC can be used as the SiC bulk single crystal for producing a practical SiC element.

由切片加工形成為圓板狀的SiC基板11，雖然最後表面被鏡面研磨，但可先利用以往眾所周知的機械研磨法研磨表面，大略地去除研磨面的凹凸，並且調整平行度。然後，藉由利用CMP(化學機械研磨)法機械化學研磨利用機械研磨法研磨過表面的SiC基板11的表面，成為表面被精整完成為鏡面的SiC基板11。此時，也可以只將SiC基板11的單面(主面)研磨，形成為鏡面，但也可以是將兩面的各面研磨的鏡面。 The SiC substrate 11 formed into a disk shape by slicing is mirror-polished, but the surface can be polished by a conventionally known mechanical polishing method, the unevenness of the polished surface is largely removed, and the parallelism is adjusted. Then, the surface of the SiC substrate 11 having been polished by the mechanical polishing method by mechanical polishing using CMP (Chemical Mechanical Polishing) is used to form the SiC substrate 11 whose surface has been finished into a mirror surface. At this time, only one surface (main surface) of the SiC substrate 11 may be polished to form a mirror surface, but a mirror surface on which each surface of both surfaces is polished may be used.

SiC基板11利用表面的研磨處理，成為去除了切片加工上述錠之際產生的起伏或加工歪曲並且基板表面被平坦化的鏡面。此種表面被研磨為鏡面的SiC 基板11成為在平坦性方面非常優良的基板。在此SiC基板11上形成有各種磊晶膜的晶圓成為在各層的結晶特性方面優良的晶圓。 The SiC substrate 11 is subjected to a polishing treatment on the surface, and is a mirror surface from which undulations or distortions caused by slicing the ingot are removed and the surface of the substrate is flattened. This surface is ground to mirrored SiC The substrate 11 is a substrate which is excellent in flatness. A wafer in which various epitaxial films are formed on the SiC substrate 11 is a wafer excellent in crystal characteristics of each layer.

SiC基板11的厚度並無特別限制，例如和以往同樣，可形成為300~800μm程度。 The thickness of the SiC substrate 11 is not particularly limited, and can be formed to about 300 to 800 μm, for example, as in the related art.

就SiC基板11的偏角(off-angle)而言，也可以是任何的偏角，並無特別限制，但從削減成本的觀點，可使用偏角小的基板，例如4°~8°的基板。 The off-angle of the SiC substrate 11 may be any off angle, and is not particularly limited. However, from the viewpoint of cost reduction, a substrate having a small off angle, for example, 4° to 8° can be used. Substrate.

當使SiC磊晶晶圓的物理特性(電氣特性等)提高之際，本發明者等著眼於SiC磊晶膜面內的載子濃度的偏差。而且，發現了要減低SiC磊晶膜的載子濃度的偏差，在此SiC磊晶膜的成膜時，基板全面減低氣體的C/Si比的偏差有效。 When the physical properties (electrical characteristics, etc.) of the SiC epitaxial wafer are improved, the inventors of the present invention have focused on the variation in the carrier concentration in the plane of the SiC epitaxial film. Further, it has been found that the variation in the carrier concentration of the SiC epitaxial film is reduced, and when the SiC epitaxial film is formed, the variation of the C/Si ratio of the gas in the entire substrate is effective.

以往，在利用CVD法等形成SiC磊晶膜的SiC磊晶晶圓方面，即使使用Si面的情況，在SiC磊晶膜面內的載子濃度中也可以看到約30%程度的偏差。此種載子濃度的偏差，顯然主要是起因於成膜裝置(製造裝置)的構造或成膜條件(成膜方法)等，由SiC磊晶膜的成膜時在晶圓中心部與外周部之間產生的C/Si比的偏差所造成。即，發現了若藉由控制SiC磊晶膜的C/Si比，減低其面內的偏差，則可使SiC磊晶膜面內的載子濃度均勻化。 Conventionally, in the case of using a SiC epitaxial wafer in which a SiC epitaxial film is formed by a CVD method or the like, even when a Si surface is used, a variation of about 30% in a carrier concentration in the plane of the SiC epitaxial film can be observed. The variation in the concentration of such a carrier is mainly caused by the structure of the film forming apparatus (manufacturing apparatus) or the film forming conditions (film forming method), etc., and the center portion and the outer peripheral portion of the wafer are formed by the SiC epitaxial film. The deviation between the C/Si ratio generated is caused. That is, it was found that by controlling the C/Si ratio of the SiC epitaxial film and reducing the variation in the plane, the carrier concentration in the plane of the SiC epitaxial film can be made uniform.

在對於中心部的載子濃度使用Si面的情況，SiC磊晶膜12面內的載子濃度的偏差為10%以下。C面的情況，比Si面得到面內均勻性良好的磊晶晶圓困難，但可使面內均勻性提高到相同程度。若載子濃度的 偏差為上述以下的話，則使用SiC磊晶晶圓形成各種元件之際，可穩定地得到優良的電氣特性。 When the Si surface is used for the carrier concentration of the center portion, the variation in the carrier concentration in the plane of the SiC epitaxial film 12 is 10% or less. In the case of the C surface, it is more difficult to obtain an epitaxial wafer having a good in-plane uniformity than the Si surface, but the in-plane uniformity can be improved to the same extent. If the concentration of the carrier When the deviation is as described above, excellent electrical characteristics can be stably obtained by forming various elements using the SiC epitaxial wafer.

就添加於SiC磊晶晶圓中的摻雜物而言，為了控制電阻，可摻入例如鋁或氮等使用。氮選擇地進入SiC的碳部位而成為施體，鋁進入矽部位而成為受體。在氮與鋁方面，雖然對於C/Si比的摻雜濃度依存性為相反，但對於C/Si比卻具有依存性則是同樣。就載子濃度而言，考慮元件形成後的電氣特性等，較佳為1×1014cm3~1×1018cm3的範圍。 For the dopant added to the SiC epitaxial wafer, in order to control the electric resistance, for example, aluminum or nitrogen may be used. Nitrogen selectively enters the carbon portion of SiC to become a donor, and aluminum enters the ruthenium site to become a acceptor. In terms of nitrogen and aluminum, although the doping concentration dependence on the C/Si ratio is reversed, the dependence on the C/Si ratio is the same. The carrier concentration is preferably in the range of 1 × 10 14 cm 3 to 1 × 10 18 cm 3 in consideration of electrical characteristics after element formation.

就SiC磊晶晶圓全體的厚度而言，並不受特別限制。 The thickness of the entire SiC epitaxial wafer is not particularly limited.

關於SiC磊晶晶圓的SiC磊晶膜12的厚度，也不受特別限制，例如以通常的沉積速度的範圍內即4μm/h程度使其磊晶沉積時，若進行2.5小時的成膜，則成為10μm程度的厚度。 The thickness of the SiC epitaxial film 12 of the SiC epitaxial wafer is not particularly limited. For example, when epitaxial deposition is performed at a level of 4 μm/h in a usual deposition rate, if film formation is performed for 2.5 hours, Then, it becomes a thickness of about 10 μm.

<SiC磊晶晶圓的製造方法> <Method of Manufacturing SiC Epitaxial Wafer>

本發明之SiC磊晶晶圓的製造方法為下述方法：將在第一實施形態至第四實施形態(第1圖~第7圖)中說明的碳構件、碳基材或由碳材料構成的基板保持環設置於SiC磊晶晶圓的製造裝置上，利用化學氣相沉積法使SiC磊晶膜12沉積於SiC基板11的主面11a上。 The method for producing a SiC epitaxial wafer of the present invention is a method of forming a carbon member, a carbon substrate, or a carbon material described in the first embodiment to the fourth embodiment (Figs. 1 to 7). The substrate holding ring is placed on the manufacturing apparatus of the SiC epitaxial wafer, and the SiC epitaxial film 12 is deposited on the main surface 11a of the SiC substrate 11 by chemical vapor deposition.

茲更加具體地以第2(a)圖為例來說明此製造方法。該製造方法至少具備：磊晶步驟，其係供應原料氣體5給載置於輔助器3上的SiC基板11的主面11a上而使SiC磊晶膜12沉積；在此磊晶步驟中，藉由具有碳構件 8，其係朝向原料氣體5的氣流的上游側，即第2(a)圖所示的箭形符號F的F1側供應碳的供應源，一面控制成提高SiC磊晶膜12外周部的C/Si比，一面使SiC磊晶膜12沉積。 More specifically, the manufacturing method will be described by taking the second (a) diagram as an example. The manufacturing method includes at least an epitaxial step of supplying a material gas 5 to the main surface 11a of the SiC substrate 11 placed on the auxiliary device 3 to deposit the SiC epitaxial film 12; in this epitaxial step, Made of carbon components 8. The supply source of carbon supplied to the upstream side of the gas flow of the material gas 5, that is, the F1 side of the arrow symbol F shown in Fig. 2(a), is controlled to increase the C of the outer peripheral portion of the SiC epitaxial film 12. The /Si ratio is deposited on one side of the SiC epitaxial film 12.

[SiC基板的準備] [Preparation of SiC substrate]

首先，當準備SiC基板11之際，準備SiC塊狀單晶錠，磨削此錠的外周，加工成圓柱狀的錠。其後，利用線鋸等將錠切片加工成圓板狀，再將其外周部去角，精整完成為具有預定直徑的SiC基板11。此時，關於SiC塊狀單晶體的沉積方法、錠的磨削加工方法、切片加工方法等，不受特別限定，可採用以往眾所周知的方法。 First, when the SiC substrate 11 is prepared, an SiC bulk single crystal ingot is prepared, and the outer periphery of the ingot is ground to be processed into a cylindrical ingot. Thereafter, the ingot is sliced into a disk shape by a wire saw or the like, and the outer peripheral portion thereof is chamfered, and finishing is completed into a SiC substrate 11 having a predetermined diameter. In this case, the method of depositing the SiC bulk single crystal, the method of grinding the ingot, the method of slicing, and the like are not particularly limited, and a conventionally known method can be employed.

[SiC基板的粗研磨步驟] [Rough grinding step of SiC substrate]

其次，在粗研磨步驟中，利用機械式研磨法研磨形成後述磊晶層之前的SiC基板11的主面11a。 Next, in the rough polishing step, the main surface 11a of the SiC substrate 11 before forming the epitaxial layer described later is polished by a mechanical polishing method.

具體而言，利用例如拋光研磨等機械式研磨法，進行去除SiC基板11的主面11a的較大的起伏或加工歪曲等凹凸的研磨處理。此時，可採用下述方法：使用以往眾所周知的拋光研磨裝置，使托運板保持SiC基板，供應研磨液，並且一面使托運板進行行星運動，一面使平臺旋轉，藉此同時拋光研磨SiC基板的單面或者也包含背面側的兩面。 Specifically, a polishing process for removing large irregularities of the main surface 11 a of the SiC substrate 11 or unevenness such as warpage is performed by a mechanical polishing method such as buffing. In this case, the following method may be employed: using a conventionally known polishing and polishing apparatus to hold the SiC substrate on the pallet, supply the polishing liquid, and rotate the platform while causing the pallet to move in a planetary motion, thereby simultaneously polishing the SiC substrate. One side or both sides of the back side.

在上述說明中，作為SiC基板11的粗研磨步驟，雖然舉出利用如上述的拋光研磨進行粗研磨的方法為例，但也可以是下述方法：例如，拋光研磨後進行 使用拋光劑的精密研磨，藉此超精密研磨SiC基板11的各面。或者，也可以在上述拋光研磨中，使用二次粒子的平均粒徑為0.25μm(250nm)程度的、在拋光劑中也使用的精細的鑽石研磨液，進行精密的研磨。也可以複數次進行如上述的SiC基板的粗研磨步驟。 In the above description, the rough polishing step of the SiC substrate 11 is exemplified by a method of performing rough polishing by the above-described buff polishing, but may be a method of, for example, polishing and polishing. The surface of the SiC substrate 11 is super precision polished by precision polishing using a polishing agent. Alternatively, in the above-described buff polishing, a fine diamond polishing liquid which is also used in a polishing agent having an average particle diameter of secondary particles of about 0.25 μm (250 nm) may be used for precise polishing. The rough grinding step of the SiC substrate as described above may also be performed plural times.

[SiC基板的平坦化步驟] [Step of planarizing SiC substrate]

其次，在平坦化步驟中，對於在上述粗研磨步驟中調整過凹凸及平行度的SiC基板11，利用CMP法施以超精密研磨(鏡面研磨)，藉此使SiC基板11的主面11a平坦化。此時，可使用和上述粗研磨步驟同樣的裝置，研磨形成磊晶層之前的SiC基板11的主面11a。 Next, in the planarization step, the SiC substrate 11 whose unevenness and parallelism are adjusted in the above-described rough polishing step is subjected to ultra-precision polishing (mirror polishing) by the CMP method, whereby the main surface 11a of the SiC substrate 11 is flattened. Chemical. At this time, the main surface 11a of the SiC substrate 11 before the epitaxial layer is formed can be polished using the same apparatus as the above-described rough polishing step.

[磊晶步驟] [Exploration step]

其次，在磊晶步驟中，使SiC磊晶膜12沉積於經平坦化的SiC基板11的主面11a上。具體而言，磊晶步驟係利用眾所周知的CVD法，將用於形成半導體元件的SiC磊晶膜12形成於SiC基板11的主面11a上。 Next, in the epitaxial step, the SiC epitaxial film 12 is deposited on the principal surface 11a of the planarized SiC substrate 11. Specifically, the epitaxial step is formed on the principal surface 11a of the SiC substrate 11 by a well-known CVD method using the SiC epitaxial film 12 for forming a semiconductor element.

在磊晶步驟中，具有成為供應碳給原料氣體5的源頭的碳構件或碳基材。例如，可利用如第1圖至第7圖所示的關於本發明之SiC磊晶晶圓的製造裝置1，形成SiC磊晶膜12。 In the epitaxial step, there is a carbon member or a carbon substrate which serves as a source for supplying carbon to the source gas 5. For example, the SiC epitaxial film 12 can be formed by using the apparatus 1 for manufacturing a SiC epitaxial wafer of the present invention as shown in FIGS. 1 to 7.

首先，將SiC基板11以主面11a側朝向上方的方式載置於製造裝置1的輔助器3上。 First, the SiC substrate 11 is placed on the auxiliary device 3 of the manufacturing apparatus 1 so that the main surface 11a side faces upward.

其次，藉由使搭載板2及輔助器3旋轉，一面使SiC基板11自公轉，一面從原料氣體導入管4和載送氣體共同供應原料氣體5。就此時的原料氣體5而言，使用一 直以來用於SiC磊晶膜成膜的含有碳化氫系氣體及矽烷系氣體而成的原料氣體，例如可採用含有C3H8作為碳化氫系氣體、含有SiH4作為矽烷系氣體的原料氣體。可導入氫作為載送氣體，導入氮作為摻雜物氣體。 Then, the SiC substrate 11 is rotated by the mounting plate 2 and the auxiliary device 3, and the material gas 5 is supplied from the material gas introduction pipe 4 and the carrier gas. In the raw material gas 5 at this time, a raw material gas containing a hydrocarbon-based gas and a decane-based gas which has been conventionally used for film formation of an SiC epitaxial film can be used, and for example, C 3 H 8 can be used as the hydrocarbon-based gas. A raw material gas containing SiH 4 as a decane-based gas. Hydrogen can be introduced as a carrier gas, and nitrogen can be introduced as a dopant gas.

原料氣體5的C/Si莫耳比設定為例如0.5~2.0程度即可。作為載送氣體，含氫的氣體較好，氫更好。流量可由使用的裝置適當決定。 The C/Si molar ratio of the material gas 5 may be set to, for example, about 0.5 to 2.0. As the carrier gas, a hydrogen-containing gas is preferred, and hydrogen is more preferred. The flow rate can be appropriately determined by the device used.

就磊晶沉積條件而言，例如以SiC磊晶膜12的沉積速度為1μm/h以上，以沉積溫度為1000℃~1800℃，較佳為1300℃~1700℃，更佳為1400℃~1600℃。環境壓力較佳是減壓，可設定為300Torr以下，50~250Torr更好。可將SiC磊晶膜12的沉積速度設定為2~30μm/h的範圍。 For the epitaxial deposition conditions, for example, the deposition rate of the SiC epitaxial film 12 is 1 μm/h or more, and the deposition temperature is 1000 ° C to 1800 ° C, preferably 1300 ° C to 1700 ° C, more preferably 1400 ° C to 1600 °C. The ambient pressure is preferably reduced pressure, and can be set to 300 Torr or less, preferably 50 to 250 Torr. The deposition rate of the SiC epitaxial film 12 can be set to a range of 2 to 30 μm/h.

在SiC磊晶晶圓的製造方法方面，如在上述製造裝置的說明中也記載過一般，在磊晶步驟中，藉由具有朝向原料氣體5的氣流的上游側(即，在第2(a)圖中箭形符號F的F1側)供應碳的碳供應源即碳構件或碳基材，一面控制成提高SiC磊晶膜12外周部的C/Si比，一面使SiC磊晶膜12沉積。藉此，可在SiC磊晶膜12的面內，使C/Si比均勻化。 In the method of manufacturing the SiC epitaxial wafer, as described above in the description of the above-described manufacturing apparatus, in the epitaxial step, the upstream side of the gas flow toward the material gas 5 is present (that is, at the second (a) In the figure, the F1 side of the arrow symbol F), the carbon supply source that supplies carbon, that is, the carbon member or the carbon substrate, is controlled to increase the C/Si ratio of the outer peripheral portion of the SiC epitaxial film 12 while depositing the SiC epitaxial film 12 . Thereby, the C/Si ratio can be made uniform in the plane of the SiC epitaxial film 12.

在本發明的磊晶步驟中，藉由碳構件、碳基材或由碳材料構成的基板保持環的材料即石墨與H2以高溫接觸，產生碳化氫。因此，除了上述的原料氣體之外，還同時供應從碳構件、碳基材或由碳材料構成的基板保持環供應的碳化氫給原料氣體5的上游側。由於 碳化氫為含有C的氣體，所以可朝向原料氣體5的上游側，更有效地供應碳。雖然已知藉由固體的碳構件和氫反應會產生碳化氫，但以用於SiC的磊晶沉積的溫度產生的碳化氫對C/Si比的變化及伴隨其的載子濃度變化有沒有影響到什麼程度卻尚未被掌握，將其用於SiC磊晶晶圓的載子濃度分布控制尚未被嘗試過。要將碳化氫的產生利用於載子濃度分布控制，需要將碳構件配置於晶圓的附近，但若使用未被披覆的碳構件，則會擔心劣化的碳給予磊晶沉積不良影響。因此，要使用上述的原理進行載子濃度分布的控制，需要將碳構件配置於對SiC磊晶晶圓的載子濃度分布控制有效果並且不給予不良影響的位置上。 In the epitaxial step of the present invention, graphite, which is a material of a substrate holding ring made of a carbon member, a carbon substrate or a carbon material, is brought into contact with H 2 at a high temperature to generate hydrocarbon. Therefore, in addition to the above-described source gas, the hydrocarbon supply supplied from the carbon member, the carbon substrate, or the substrate holding ring made of the carbon material is supplied to the upstream side of the source gas 5. Since the hydrocarbon is a gas containing C, it is possible to supply carbon more efficiently toward the upstream side of the source gas 5. Although it is known that carbon dioxide is generated by the reaction of a solid carbon member with hydrogen, the hydrogen carbide generated at the temperature for epitaxial deposition of SiC has no effect on the change in C/Si ratio and the change in carrier concentration accompanying it. To what extent, it has not yet been mastered, and its carrier concentration distribution control for SiC epitaxial wafers has not been tried. In order to utilize the generation of hydrocarbons for carrier concentration distribution control, it is necessary to arrange the carbon member in the vicinity of the wafer. However, if an uncoated carbon member is used, there is a concern that the deteriorated carbon imparts adverse effects on epitaxial deposition. Therefore, in order to control the carrier concentration distribution using the above principle, it is necessary to arrange the carbon member at a position where the carrier concentration distribution control of the SiC epitaxial wafer is effective and does not adversely affect.

在SiC磊晶晶圓的製造方法方面，在磊晶步驟中，控制成提高SiC磊晶膜12的外周部的C/Si比。較佳為包含此時的外周部在內，實際效果的C/Si比控制成整個磊晶晶圓成為0.5~2.0的範圍。 In the method of manufacturing the SiC epitaxial wafer, in the epitaxial step, the C/Si ratio of the outer peripheral portion of the SiC epitaxial film 12 is controlled to be increased. Preferably, the C/Si ratio of the actual effect including the outer peripheral portion at this time is controlled to be 0.5 to 2.0 in the entire epitaxial wafer.

藉由提高SiC磊晶膜12的上述範圍的外周部的C/Si比，減低此區域的載子濃度。藉此，抑制SiC磊晶膜12面內的載子濃度的偏差，得到均勻的載子濃度分布。 The carrier concentration in this region is reduced by increasing the C/Si ratio of the outer peripheral portion of the SiC epitaxial film 12 in the above range. Thereby, variations in the carrier concentration in the plane of the SiC epitaxial film 12 are suppressed, and a uniform carrier concentration distribution is obtained.

藉由將外周部的C/Si比控制在0.5~2.0的範圍內，可對於中心部的載子濃度，將SiC磊晶膜12面內的載子濃度的偏差控制在10%以下，可形成在面內具有均勻的載子濃度的SiC磊晶膜12。 By controlling the C/Si ratio of the outer peripheral portion in the range of 0.5 to 2.0, the carrier concentration in the plane of the SiC epitaxial film 12 can be controlled to 10% or less with respect to the carrier concentration of the central portion, and can be formed. The SiC epitaxial film 12 having a uniform carrier concentration in the plane.

(作用效果) (Effect)

藉由以上各步驟，可製造使SiC磊晶膜12面內的載子濃度均勻化的在電氣特性方面優良的SiC磊晶晶圓10。 By the above steps, the SiC epitaxial wafer 10 excellent in electrical characteristics for uniformizing the carrier concentration in the plane of the SiC epitaxial film 12 can be produced.

以上，就本發明的較佳實施形態進行了詳細敘述，但本發明並不受特定實施形態限定，可在記載於申請專利範內的本發明的要旨的範圍內，進行各種的變形、變更。 The present invention has been described in detail with reference to the preferred embodiments of the present invention. The present invention is not limited thereto, and various modifications and changes are possible within the scope of the invention as described in the appended claims.

[實施例] [Examples]

以下，使用實施例具體地說明本發明的效果。本發明並不受此等實施例限定。 Hereinafter, the effects of the present invention will be specifically described using examples. The invention is not limited by these examples.

在本實施例中，使SiC磊晶膜沉積之際，在使用具備碳構件的製造裝置的情況與使用不具有此碳構件的製造裝置的情況，調查了SiC磊晶晶圓半徑方向的SiC磊晶膜中的載子濃度分布。 In the present embodiment, when the SiC epitaxial film is deposited, the SiC Lei in the radial direction of the SiC epitaxial wafer is investigated in the case of using a manufacturing apparatus having a carbon member and using a manufacturing apparatus having no such carbon member. The concentration distribution of the carrier in the crystal film.

[實施例1] [Example 1]

在實施例1中，首先，以SiC基板(6英寸、4H-SiC-4°傾斜基板(off-substrate))的C面為主面，使用二次粒子的平均粒徑為0.25μm的鑽石研磨液施以拋光式研磨後，再施以CMP研磨。 In the first embodiment, first, the C surface of the SiC substrate (6-inch, 4H-SiC-4° off-substrate) was used as the main surface, and the diamond having the average particle diameter of the secondary particles of 0.25 μm was used. After the liquid is subjected to polishing grinding, it is subjected to CMP polishing.

在C面上的SiC磊晶沉積方面，由於載子濃度大幅受到C/Si比的影響，所以載子濃度分布變大。這次，為了更加明顯地顯示利用碳構件改善載子濃度分布的效果，使用了C面晶圓。 In the SiC epitaxial deposition on the C surface, since the carrier concentration is greatly affected by the C/Si ratio, the carrier concentration distribution becomes large. This time, in order to more clearly show the effect of improving the carrier concentration distribution by the carbon member, a C-plane wafer was used.

其次，利用如第1圖所示的製造裝置(CVD成膜裝置)，在研磨後的SiC基板的主面(C面)上，以5μm的厚度形成SiC磊晶膜。此時，在設於載置台上的輔助器上載置SiC基板，一面使此SiC基板自公轉，一面和載送氣體共同供應原料氣體。 Next, a SiC epitaxial film was formed on the main surface (C surface) of the polished SiC substrate by a manufacturing apparatus (CVD film forming apparatus) as shown in Fig. 1 with a thickness of 5 μm. At this time, the SiC substrate is placed on the auxiliary device provided on the mounting table, and the raw material gas is supplied together with the carrier gas while the SiC substrate is being revolved.

就此時的成膜條件而言，係以沉積溫度為1600℃，將氫用作載送氣體，將氮用作摻雜物用氣體，將丙烷用作C原料氣體，將矽烷用作Si原料氣體，C/Si比設定為1.1。 In terms of film formation conditions at this time, hydrogen is used as a carrier gas at a deposition temperature of 1600 ° C, nitrogen is used as a dopant gas, propane is used as a C source gas, and decane is used as a Si source gas. The C/Si ratio is set to 1.1.

在本實施例中，使用第一實施形態之第2圖的輔助器作為輔助器。即，將碳的供應源即碳構件8配置於比SiC基板下方的位置且不接觸到SiC基板的位置上，以環狀構件9覆蓋該碳構件8上。 In the present embodiment, the assister of Fig. 2 of the first embodiment is used as an assist. In other words, the carbon member 8 which is a carbon supply source is disposed at a position below the SiC substrate and does not contact the SiC substrate, and the carbon member 8 is covered with the annular member 9.

此時的碳構件8使用超高純度石墨。市售的超高純度石墨，係使用B為0.1ppm wt、Mg為0.0.001ppm wt以下、Al為0.001ppm wt以下、Ti為0.001ppm wt以下、V為0.001ppm wt以下、Cr為0.004ppm wt以下、Fe為0.02ppm wt以下、Ni為0.001ppm wt以下程度作為雜質且烘烤去除氮的超高純度石墨。因此，幾乎沒有供應碳以外的元素。 The carbon member 8 at this time uses ultra high purity graphite. Commercially available ultra-high purity graphite, using B of 0.1 ppm wt, Mg of 0.0.001 ppm wt or less, Al of 0.001 ppm wt or less, Ti of 0.001 ppm wt or less, V of 0.001 ppm wt or less, and Cr of 0.004 ppm wt. Hereinafter, ultrahigh-purity graphite in which nitrogen is 0.02 ppm wt or less and Ni is 0.001 ppm wt or less is used as an impurity and nitrogen is baked and baked. Therefore, almost no elements other than carbon are supplied.

而且，關於以上述步驟得到的SiC磊晶膜形成於SiC基板的主面上的SiC磊晶晶圓，係利用CV測定裝置，在SiC磊晶晶圓的半徑方向，朝向外周端部~中心部~外周端部，以10mm間距測定載子濃度，將結果顯示於第8(a)及(b)圖的圖表中。第8(a)圖為顯示SiC 磊晶晶圓半徑方向的載子濃度分布的圖表，(b)圖為顯示SiC磊晶晶圓半徑方向的載子濃度對於晶圓中心的載子濃度之比的圖表。 Further, the SiC epitaxial wafer in which the SiC epitaxial film obtained in the above step is formed on the main surface of the SiC substrate is oriented in the radial direction of the SiC epitaxial wafer toward the outer peripheral end to the central portion by the CV measuring device. ~ The outer peripheral end portion was measured at a 10 mm pitch, and the results were shown in the graphs of Figs. 8(a) and (b). Figure 8(a) shows SiC A graph of the carrier concentration distribution in the radial direction of the epitaxial wafer, and (b) is a graph showing the ratio of the carrier concentration in the radial direction of the SiC epitaxial wafer to the carrier concentration in the wafer center.

[實施例2] [Embodiment 2]

在實施例2中，使用在第二實施形態的第4(a)及(b)圖中所示的輔助器作為輔助器。即，使用整個鏜孔部132a的底面露出而成的碳基材118作為碳的供應源。其他之點，以和上述實施例1同樣的步驟及條件製作SiC磊晶晶圓。 In the second embodiment, the assister shown in the fourth (a) and (b) of the second embodiment is used as an assist. That is, the carbon substrate 118 exposed using the bottom surface of the entire pupil portion 132a is used as a supply source of carbon. Otherwise, a SiC epitaxial wafer was produced in the same manner and under the same conditions as in the above Example 1.

而且，以和上述實施例1同樣的方法，在SiC磊晶晶圓的半徑方向，朝向外周端部~中心部~外周端部，以10mm間距測定載子濃度，將結果顯示於第8(a)及(b)圖的圖表中。 Further, in the same manner as in the above-described first embodiment, the carrier concentration was measured at a pitch of 10 mm from the outer peripheral end portion to the central portion to the outer peripheral end portion in the radial direction of the SiC epitaxial wafer, and the result was shown in the eighth (a). ) and (b) in the diagram of the chart.

[比較例1] [Comparative Example 1]

在比較例1中，除了使用未具備碳構件的製造裝置作為製造裝置之點之外，都以和實施例1同樣的步驟及條件製作SiC磊晶晶圓。 In Comparative Example 1, a SiC epitaxial wafer was produced in the same manner and under the same conditions as in Example 1 except that a manufacturing apparatus not having a carbon member was used as a manufacturing apparatus.

而且，以和上述實施例1同樣的方法，在SiC磊晶晶圓的半徑方向，朝向外周端部~中心部~外周端部，以10mm間距測定載子濃度，將結果顯示於第8(a)及(b)圖的圖表中。 Further, in the same manner as in the above-described first embodiment, the carrier concentration was measured at a pitch of 10 mm from the outer peripheral end portion to the central portion to the outer peripheral end portion in the radial direction of the SiC epitaxial wafer, and the result was shown in the eighth (a). ) and (b) in the diagram of the chart.

[評估結果] [evaluation result]

如第8(a)及(b)圖的圖表所示得知，使用本發明的製造裝置，藉由一面供應碳給原料氣體的上游，一面將SiC磊晶膜形成於SiC基板的主面上而得到的實 施例1及實施例2的SiC磊晶晶圓在整個面內，相較於比較例1，載子濃度較為均勻。 As shown in the graphs of Figs. 8(a) and (b), it is known that the SiC epitaxial film is formed on the main surface of the SiC substrate by supplying carbon to the upstream of the material gas while using the manufacturing apparatus of the present invention. And the real In the SiC epitaxial wafers of Example 1 and Example 2, the carrier concentration was relatively uniform over the entire surface of Comparative Example 1.

此處，在比較例1中，雖然在晶圓中心部附近顯示比較低的載子濃度，但在晶圓外周部(邊緣附近)卻顯示非常高的載子濃度，得知SiC磊晶膜面內的載子濃度明顯地成為不均勻。 Here, in Comparative Example 1, although a relatively low carrier concentration is displayed in the vicinity of the center portion of the wafer, a very high carrier concentration is exhibited in the outer peripheral portion (near the edge) of the wafer, and the SiC epitaxial film surface is known. The concentration of the carrier inside is clearly uneven.

另一方面，在實施例1及實施例2方面，載子濃度的偏差比比較例1減低。如第8(b)圖所示，在比較例1方面，載子濃度的偏差(中央部與外周部的載子濃度之差)為25%以上，相對於此，在實施例1方面，為20%以下，在實施例2方面，為10%程度。 On the other hand, in the first embodiment and the second embodiment, the variation in the carrier concentration was lower than that in the comparative example 1. As shown in Fig. 8(b), in the case of the comparative example 1, the variation in the carrier concentration (the difference in the carrier concentration between the central portion and the outer peripheral portion) is 25% or more. On the other hand, in the first embodiment, 20% or less, in the case of Example 2, it is about 10%.

尤其得知，在實施例1方面，相較於比較例1，在整個面內，載子濃度被控制得較低，特別是在晶圓外周部，載子濃度被大幅減低。 In particular, in the case of Example 1, the carrier concentration was controlled to be low over the entire surface as compared with Comparative Example 1, and particularly at the outer peripheral portion of the wafer, the carrier concentration was greatly reduced.

由上述結果，在實施例1及實施例2中製作的SiC磊晶晶圓方面，特別是就外周部的載子濃度被減低的理由而言，被認為是藉由以供應碳給原料氣體的上游側的條件形成SiC磊晶膜，在位於氣流的上游側的晶圓外周部提高C/Si比，此位置的載子濃度伴隨此而變低。 From the above results, in the SiC epitaxial wafers produced in the first and second embodiments, in particular, the reason why the concentration of the carrier in the outer peripheral portion is reduced is considered to be to supply the raw material gas by supplying carbon. The condition of the upstream side forms a SiC epitaxial film, and the C/Si ratio is increased at the outer peripheral portion of the wafer located on the upstream side of the gas flow, and the carrier concentration at this position becomes lower.

[實施例3] [Example 3]

在實施例3中，首先，以SiC基板(4英寸、4H-SiC-4°傾斜基板(off-substrate))的C面為主面，使用二次粒子的平均粒徑為0.25μm的鑽石研磨液施以拋光式研磨後，再施以CMP研磨。 In the third embodiment, first, the C surface of the SiC substrate (4 inch, 4H-SiC-4° off-substrate) was used as the main surface, and the diamond having the average particle diameter of the secondary particles of 0.25 μm was used. After the liquid is subjected to polishing grinding, it is subjected to CMP polishing.

其次，利用如第6圖所示的製造裝置(CVD成膜裝置)，在研磨後的SiC基板的主面(C面)上，以5μm的厚度形成SiC磊晶膜。此時，在設於載置台上的輔助器上載置SiC基板，一面使此SiC基板自公轉，一面和載送氣體共同供應原料氣體。成膜條件和實施例1同樣。 Next, a SiC epitaxial film was formed on the main surface (C surface) of the polished SiC substrate by a manufacturing apparatus (CVD film forming apparatus) as shown in Fig. 6 with a thickness of 5 μm. At this time, the SiC substrate is placed on the auxiliary device provided on the mounting table, and the raw material gas is supplied together with the carrier gas while the SiC substrate is being revolved. The film formation conditions were the same as in Example 1.

在本實施例中，如在第三實施形態中所示，以第6圖的氣體導入構件204附近的覆蓋構件209為由碳構成的覆蓋構件。利用此由碳構成的覆蓋構件209，一面朝向原料氣體的上游側供應碳，一面使SiC磊晶膜沉積。覆蓋構件的碳的材質使用和實施例1的碳構件相同的材質。 In the present embodiment, as shown in the third embodiment, the covering member 209 in the vicinity of the gas introduction member 204 of Fig. 6 is a covering member made of carbon. By using the cover member 209 made of carbon, carbon is supplied toward the upstream side of the material gas, and the SiC epitaxial film is deposited. The material of the carbon of the covering member was the same as that of the carbon member of Example 1.

而且，以和上述實施例1同樣的方法，在SiC磊晶晶圓的半徑方向，朝向外周端部~中心部~外周端部，以10mm間距測定載子濃度，將結果顯示於第9(a)及(b)圖的圖表中。第9(a)圖為顯示SiC磊晶晶圓半徑方向的載子濃度分布的圖表，(b)圖為顯示SiC磊晶晶圓半徑方向的載子濃度對於晶圓中心的載子濃度之比的圖表。 Further, in the same manner as in the above-described first embodiment, the carrier concentration was measured at a pitch of 10 mm from the outer peripheral end portion to the central portion to the outer peripheral end portion in the radial direction of the SiC epitaxial wafer, and the result was shown in the ninth (a). ) and (b) in the diagram of the chart. Figure 9(a) is a graph showing the carrier concentration distribution in the radial direction of the SiC epitaxial wafer, and (b) is a graph showing the ratio of the carrier concentration in the radial direction of the SiC epitaxial wafer to the carrier concentration in the wafer center. Chart.

[比較例2] [Comparative Example 2]

在比較例2中，除了使用未具備碳構件的製造裝置作為製造裝置之點之外，都以和實施例3同樣的步驟及條件製作SiC磊晶晶圓。 In Comparative Example 2, a SiC epitaxial wafer was produced in the same manner and under the same conditions as in Example 3 except that a manufacturing apparatus not having a carbon member was used as a manufacturing apparatus.

而且，以和上述實施例1同樣的方法，在SiC磊晶晶圓的半徑方向，朝向外周端部~中心部~外周端部，以10mm間距測定載子濃度，將結果顯示於第9(a)及(b)圖的圖表中。 Further, in the same manner as in the above-described first embodiment, the carrier concentration was measured at a pitch of 10 mm from the outer peripheral end portion to the central portion to the outer peripheral end portion in the radial direction of the SiC epitaxial wafer, and the result was shown in the ninth (a). ) and (b) in the diagram of the chart.

[評估結果] [evaluation result]

如第9(b)圖所示，在比較例2方面，載子濃度的偏差(中央部與外周部的載子濃度之差)為50%以上，相對於此，在實施例3方面，為20%以下。 As shown in Fig. 9(b), in the second comparative example, the variation in the carrier concentration (the difference in the carrier concentration between the central portion and the outer peripheral portion) is 50% or more. On the other hand, in the third embodiment, 20% or less.

此被認為是，在實施例3方面，藉由以供應碳給原料氣體的上游側的條件形成SiC磊晶膜，在位於氣流的上游側的晶圓外周部提高C/Si比，此位置的載子濃度伴隨此而變低。 It is considered that, in the third embodiment, the SiC epitaxial film is formed by the condition of supplying the carbon to the upstream side of the source gas, and the C/Si ratio is increased at the outer peripheral portion of the wafer located on the upstream side of the gas stream. The carrier concentration becomes low with this.

[產業上的利用可能性] [Industry use possibility]

本發明之SiC磊晶晶圓的製造裝置，可用簡便的裝置以良好的生產性製造在電氣特性方面優良的SiC磊晶晶圓，所以可製造使用於例如功率元件、高頻元件、高溫動作元件等的SiC磊晶晶圓。 The apparatus for manufacturing a SiC epitaxial wafer of the present invention can be used to manufacture a SiC epitaxial wafer excellent in electrical characteristics with a simple device, and can be manufactured and used for, for example, a power element, a high frequency element, and a high temperature action element. SiC epitaxial wafers.

1‧‧‧製造裝置(SiC磊晶晶圓的製造裝置) 1‧‧‧Manufacturing device (manufacturing device for SiC epitaxial wafer)

2‧‧‧搭載板 2‧‧‧Loading board

2A‧‧‧旋轉軸 2A‧‧‧Rotary axis

2a‧‧‧上面 2a‧‧‧above

2b‧‧‧下面 2b‧‧‧ below

3‧‧‧輔助器 3‧‧‧Assistor

4‧‧‧氣體導入管 4‧‧‧ gas introduction tube

5‧‧‧原料氣體 5‧‧‧Material gases

6‧‧‧頂板 6‧‧‧ top board

6a‧‧‧中央部 6a‧‧‧Central Department

21‧‧‧基材 21‧‧‧Substrate

22‧‧‧披覆膜 22‧‧‧ Covered film

23‧‧‧凹狀收容部 23‧‧‧ concave housing

Claims (7)

一種SiC磊晶晶圓的製造裝置，其係利用化學氣相沉積法使SiC磊晶膜沉積於SiC基板的主面上，其特徵在於具備：搭載板，其具有凹狀收容部；輔助器，其配置於前述凹狀收容部內，在上面載置SiC基板；碳構件，其在前述凹狀收容部內，配置於比SiC基板下方的位置且不接觸到SiC基板的位置上；及基板保持環，其具有和SiC基板大致相同尺寸的開口部，並且配置成包圍SiC基板的側面，前述碳構件為配置於該基板保持環下面的環狀構件。 An apparatus for manufacturing a SiC epitaxial wafer, wherein a SiC epitaxial film is deposited on a main surface of a SiC substrate by a chemical vapor deposition method, comprising: a mounting plate having a concave receiving portion; and an auxiliary device; The SiC substrate is placed on the concave accommodating portion, and the carbon member is disposed at a position below the SiC substrate and not in contact with the SiC substrate in the concave accommodating portion; and the substrate holding ring. It has an opening portion having substantially the same size as the SiC substrate, and is disposed to surround the side surface of the SiC substrate, and the carbon member is an annular member disposed under the substrate holding ring. 一種SiC磊晶晶圓的製造裝置，其係利用化學氣相沉積法使SiC磊晶膜沉積於SiC基板的主面上，其特徵在於具有：搭載板，其具有凹狀收容部；輔助器，其配置於前述凹狀收容部內，在上面載置SiC基板；及前述輔助器係由以非碳材料披覆的碳基材構成，碳基材露出於不接觸到載置的SiC基板的位置的部分。 An apparatus for manufacturing a SiC epitaxial wafer, wherein a SiC epitaxial film is deposited on a main surface of a SiC substrate by a chemical vapor deposition method, comprising: a mounting plate having a concave receiving portion; and an auxiliary device; The SiC substrate is placed on the concave receiving portion, and the auxiliary device is made of a carbon substrate coated with a non-carbon material, and the carbon substrate is exposed to a position where the SiC substrate is not placed. section. 如請求項2之SiC磊晶晶圓的製造裝置，其中前述輔助器具有：鏜孔部，其以不和SiC基板接觸的方式形成於其上面的中央部；及支持部，其配置成包圍該鏜孔部，支持SiC基板， 前述鏜孔部底面的至少一部分，係碳基材露出，構成前述碳基材露出的部分。 The apparatus for manufacturing a SiC epitaxial wafer according to claim 2, wherein the auxiliary device has a boring portion formed at a central portion of the SiC substrate not in contact with the SiC substrate, and a support portion configured to surround the SiC epitaxial wafer The boring part supports the SiC substrate, At least a part of the bottom surface of the pupil portion is exposed to a carbon substrate, and constitutes a portion where the carbon substrate is exposed. 如請求項2或3中任一項之SiC磊晶晶圓的製造裝置，其中前述輔助器背面的至少一部分，係碳基材露出，構成前述碳基材露出的部分。 The apparatus for manufacturing an SiC epitaxial wafer according to any one of claims 2 to 3, wherein at least a part of the back surface of the auxiliary device is exposed to a carbon substrate to constitute a portion where the carbon substrate is exposed. 一種SiC磊晶晶圓的製造裝置，其係利用化學氣相沉積法使SiC磊晶膜沉積於SiC基板的主面上，其特徵在於具備：搭載板，其具有凹狀收容部；輔助器，其配置於前述凹狀收容部內，在上面載置SiC基板；原料氣體導入管，其用於供應SiC磊晶膜的原料氣體給載置於前述輔助器上的SiC基板的主面上；碳構件，其配置於前述原料氣體導入管的氣體導入口與前述輔助器之間的原料氣體的上游側；及複數個覆蓋構件，其覆蓋前述搭載板的上面，前述複數個覆蓋構件之中的一部分係由碳構成，此一部分的覆蓋構件構成前述碳構件。 An apparatus for manufacturing a SiC epitaxial wafer, wherein a SiC epitaxial film is deposited on a main surface of a SiC substrate by a chemical vapor deposition method, comprising: a mounting plate having a concave receiving portion; and an auxiliary device; Disposed in the concave accommodating portion, on which a SiC substrate is placed, and a material gas introduction pipe for supplying a raw material gas of the SiC epitaxial film to the main surface of the SiC substrate placed on the auxiliary device; An upstream side of the material gas disposed between the gas introduction port of the raw material gas introduction pipe and the auxiliary device, and a plurality of covering members covering the upper surface of the mounting plate, and some of the plurality of covering members are It is made of carbon, and this part of the covering member constitutes the aforementioned carbon member. 一種SiC磊晶晶圓的製造裝置，其係利用化學氣相沉積法使SiC磊晶膜沉積於SiC基板的主面上，其特徵在於具備：搭載板，其具有凹狀收容部；輔助器，其配置於前述凹狀收容部內，在上面載置SiC基板；及基板保持環，其由碳材料構成，具有和SiC基板 大致相同尺寸的開口部，並且配置成包圍SiC基板的側面。 An apparatus for manufacturing a SiC epitaxial wafer, wherein a SiC epitaxial film is deposited on a main surface of a SiC substrate by a chemical vapor deposition method, comprising: a mounting plate having a concave receiving portion; and an auxiliary device; The SiC substrate is placed on the concave receiving portion, and the substrate holding ring is made of a carbon material and has a SiC substrate. The openings of substantially the same size are arranged to surround the side faces of the SiC substrate. 一種SiC磊晶晶圓的製造方法，其特徵在於：將請求項1至6中任一項之碳構件、碳基材或由碳材料構成的基板保持環設置於SiC磊晶晶圓的製造裝置上而製造SiC磊晶晶圓。 A method for producing a SiC epitaxial wafer, comprising: a carbon member, a carbon substrate, or a substrate holding ring made of a carbon material according to any one of claims 1 to 6; SiC epitaxial wafers are fabricated.
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