TWI535335B - A structure, a light extraction film, an electronic device, and a structure - Google Patents
A structure, a light extraction film, an electronic device, and a structure Download PDFInfo
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- TWI535335B TWI535335B TW102135840A TW102135840A TWI535335B TW I535335 B TWI535335 B TW I535335B TW 102135840 A TW102135840 A TW 102135840A TW 102135840 A TW102135840 A TW 102135840A TW I535335 B TWI535335 B TW I535335B
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- JREWFSHZWRKNBM-UHFFFAOYSA-N pyridine-2,3,4,5-tetracarboxylic acid Chemical compound OC(=O)C1=CN=C(C(O)=O)C(C(O)=O)=C1C(O)=O JREWFSHZWRKNBM-UHFFFAOYSA-N 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000001226 reprecipitation Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000006798 ring closing metathesis reaction Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-L succinate(2-) Chemical compound [O-]C(=O)CCC([O-])=O KDYFGRWQOYBRFD-UHFFFAOYSA-L 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 125000005931 tert-butyloxycarbonyl group Chemical group [H]C([H])([H])C(OC(*)=O)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- RWRDLPDLKQPQOW-UHFFFAOYSA-N tetrahydropyrrole Substances C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- QXJQHYBHAIHNGG-UHFFFAOYSA-N trimethylolethane Chemical compound OCC(C)(CO)CO QXJQHYBHAIHNGG-UHFFFAOYSA-N 0.000 description 1
- 150000003672 ureas Chemical class 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Description
本發明係關於在表面具有藉由聚醯亞胺或聚醯亞胺前驅物之自我組織化所形成之凹凸之構造物、光取出膜、電子裝置及構造物之形成方法。 The present invention relates to a structure, a light extraction film, an electronic device, and a structure for forming a structure having irregularities formed by self-organization of a polyimide or a polyimide precursor on a surface thereof.
近年來廣泛地探討提升光學裝置(光學元件)之光取出效率。光學裝置係可舉出例如,透明基板、透明電極、發光層及電極依此順序受到層合,由透明基板側取出光之發光二極體(LED、Light Emmiting Diode)元件,但於透明基板、透明電極及發光層之各界面上因光之反射等,而導致光取出效率降低,故需求光取出效率之提升。作為提升光取出效率之技術,有機發光二極體(OLED)元件中已知有於取出光之面(光取出面)之最前面設置透鏡之方法(參考專利文獻1)、於光取出面之最前面藉由溶膠凝膠法設置多孔質光散射體之方法(參考專利文獻2)、設置經分散有產生電漿子之金屬微粒子之光散射層的方法(參考專利文獻3)。 In recent years, the light extraction efficiency of an optical device (optical element) has been extensively discussed. In the optical device, for example, a transparent substrate, a transparent electrode, a light-emitting layer, and an electrode are laminated in this order, and a light-emitting diode (LED, Light Emitting Diode) element is taken out from the transparent substrate side, but on a transparent substrate, The light extraction efficiency is lowered due to reflection of light on the surface of the transparent electrode and the light-emitting layer, so that the light extraction efficiency is required to be improved. As a technique for improving the efficiency of light extraction, a method of providing a lens at the forefront of a surface on which light is taken out (light extraction surface) is known in an organic light-emitting diode (OLED) device (refer to Patent Document 1), and a light extraction surface is used. A method of providing a porous light-scattering body by a sol-gel method (refer to Patent Document 2) and a method of disposing a light-scattering layer in which metal fine particles generating a plasmon is dispersed (refer to Patent Document 3).
又,作為在透明基板與透明電極之間或透明 電極與發光層之間設置提升光取出效率之光取出膜之技術,例如,已報告有如設置具有藉由壓印法所形成之凹凸部之低折射率層(光取出膜)之技術(參考專利文獻4)。且,最近亦報告有使用鋁於PDMS(聚甲基矽氧烷)表面製成凹凸,且藉由奈米壓印法轉印凹凸而得到具有轉印凹凸之構造物(光取出膜),而於透明基板與透明電極之間設置有該構造物之OLED元件之光取出效率提高約100%(參考非專利文獻1)。 Also, as between the transparent substrate and the transparent electrode or transparent A technique of providing a light extraction film for improving the light extraction efficiency between the electrode and the light-emitting layer, for example, a technique of providing a low refractive index layer (light extraction film) having a concave-convex portion formed by an imprint method has been reported (refer to the patent) Document 4). Further, recently, it has been reported that aluminum is used to form irregularities on the surface of PDMS (polymethyl siloxane), and a structure having a transfer unevenness (light extraction film) is obtained by transferring unevenness by a nanoimprint method. The light extraction efficiency of the OLED element in which the structure is provided between the transparent substrate and the transparent electrode is improved by about 100% (refer to Non-Patent Document 1).
因此,藉由設置於表面具有凹凸之光取出膜,而可提升光取出效率,但以上述壓印法形成凹凸時,其製造步驟為長,且有無法容易形成之問題。 Therefore, the light extraction efficiency can be improved by removing the film by the light having irregularities on the surface. However, when the unevenness is formed by the above-described imprint method, the manufacturing process is long and there is a problem that it cannot be easily formed.
在此,亦已報告有藉由使聚苯乙烯與聚甲基丙烯酸甲酯之嵌段共聚物進行熱退火而自我組織化,其後藉由乾蝕刻而製成微細凹凸之技術(參考非專利文獻2)。此自我組織化在與自過往半導體裝置製造中使用之光微影法等相比,具有可簡便且平價地進行奈米尺度之加工之優點。 Here, a technique of self-organizing by thermally annealing a block copolymer of polystyrene and polymethyl methacrylate, and then making fine irregularities by dry etching has been reported (refer to Non-patent) Literature 2). This self-organization has an advantage that it can be processed at a nanometer scale in a simple and inexpensive manner as compared with the photolithography method used in the manufacture of semiconductor devices in the past.
然而,或許係由於丙烯醯基系之嵌段共聚物之聚苯乙烯與聚甲基丙烯酸甲酯之嵌段共聚物之製造非常地困難,而有使用聚苯乙烯與聚甲基丙烯酸甲酯之嵌段共聚物之自我組織化所形成之凹凸之再現性差之問題。 However, it may be because the block copolymer of polystyrene and polymethyl methacrylate of the propylene-based block copolymer is extremely difficult to manufacture, and polystyrene and polymethyl methacrylate are used. The problem of poor reproducibility of the irregularities formed by the self-organization of the block copolymer.
又,藉由施行此嵌段共聚物之自我組織化而形成凹凸之方法,則必須要有使表面出現凹凸用之乾蝕刻、於300℃之高溫下之燒成、退火或氮環境下之操作, 故其製造步驟長且繁雜,則必須投資高價之設備。 Further, by performing the self-organization of the block copolymer to form irregularities, it is necessary to perform dry etching for unevenness on the surface, firing at 300 ° C, annealing, or operation in a nitrogen atmosphere. , Therefore, the manufacturing process is long and complicated, and it is necessary to invest in high-priced equipment.
尚且,不僅係侷限於具備在表面具有凹凸之光取出膜之LED,各種光學裝置或乃至於半導體裝置、太陽能電池、顯示器、記憶媒體、生化晶片等之電子裝置中,亦同樣希望可如此般容易且再現性良好地製造於表面具有凹凸之構造物。 Furthermore, it is not only limited to LEDs having a light extraction film having irregularities on the surface, but also various optical devices, or even electronic devices such as semiconductor devices, solar cells, displays, memory media, biochemical wafers, etc., are also expected to be so easy. Moreover, the structure having irregularities on the surface is manufactured with good reproducibility.
〔專利文獻1〕日本特開2011-29172號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2011-29172
〔專利文獻2〕日本特開2009-238507號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2009-238507
〔專利文獻3〕日本特開2007-165284號公報 [Patent Document 3] Japanese Patent Laid-Open Publication No. 2007-165284
〔專利文獻4〕日本特開2011-44296號公報 [Patent Document 4] Japanese Patent Laid-Open Publication No. 2011-44296
〔非專利文獻1〕Nature Photonics、美國、2010年、4卷、p.222-226 [Non-Patent Document 1] Nature Photonics, USA, 2010, Vol. 4, p. 222-226
〔非專利文獻2〕Japanese Journal of Applied Physics、日本、2002年、41卷、p.6112-6118 [Non-Patent Document 2] Japanese Journal of Applied Physics, Japan, 2002, 41, p. 6112-6118
本發明係有鑑於上述情事所完成者,其所欲解決之課題係以提供於表面具有凹凸之構造物,並可容易 且再現性良好地進行製造之構造物、光取出膜、電子裝置及構造物之形成方法為目的。 The present invention has been made in view of the above circumstances, and the object to be solved is to provide a structure having irregularities on the surface, and it is easy to It is an object of a structure, a light extraction film, an electronic device, and a method of forming a structure which are manufactured with good reproducibility.
本發明者等為解決上述課題經過精心研檢討之結果,發現將含有聚醯亞胺前驅物或聚醯亞胺,與該聚醯亞胺前驅物或聚醯亞胺相異之聚合物,或同時含有丙二醇單甲基醚之組成物塗佈於基材上,且僅放置及燒成即會進行自我組織化,而可再現性良好地取得於表面具有凹凸之構造物之知識,進而完成了本發明。 The inventors of the present invention have conducted intensive studies to solve the above problems, and have found that a polymer containing a polyimine precursor or a polyimine, which is different from the polyimide precursor or polyimine, or At the same time, the composition containing propylene glycol monomethyl ether is applied to a substrate, and is self-organized only when placed and fired, and the knowledge of the structure having irregularities on the surface is reproducible, and the completion is completed. this invention.
即,本發明係具有以下要旨者。 That is, the present invention has the following gist.
1. 一種構造物,其特徵為包含由聚醯亞胺所構成之第1聚合物,且於表面具有藉由前述第1聚合物之自我組織化所形成之凹凸。 A structure comprising a first polymer composed of polyimide and having irregularities formed by self-organization of the first polymer on a surface thereof.
2. 如1.之構造物,其中形成於前述表面之凸部之平均高度為0.5nm~500nm。 2. The structure of 1, wherein the convex portion formed on the surface has an average height of 0.5 nm to 500 nm.
3. 如1.或2.之構造物,其中包含前述第1聚合物及與該第1聚合物相異之第2聚合物,且於表面具有藉由前述第1聚合物及前述第2聚合物之自我組織化所形成之凹凸。 3. The structure according to 1. or 2., comprising the first polymer and a second polymer different from the first polymer, and having a first polymer and a second polymerization layer on a surface thereof The bump formed by the self-organization of the object.
4. 如1.~3.中任一項之構造物,其中前述第2聚合物係由與前述第1聚合物相異之聚醯亞胺所構成。 4. The structure according to any one of 1 to 3, wherein the second polymer is composed of a polyimine different from the first polymer.
5. 如1.~4.中任一項之構造物,其中前述第1聚合物及前述第2聚合物之至少一者具有選自能於分子內 或分子間形成氫鍵之鍵結,及,能於分子內或分子間形成氫鍵之取代基之至少一種。 5. The structure of any one of 1 to 4, wherein at least one of the first polymer and the second polymer is selected from the group consisting of Or a bond forming a hydrogen bond between the molecules, and at least one of a substituent capable of forming a hydrogen bond in or between molecules.
6. 如5.之構造物,其中前述能於分子內或分子間形成氫鍵之鍵結為下述式(1)所表示者,前述能於分子內或分子間形成氫鍵之取代基為選自羥基、硫醇基、胺基及羧基之基。 6. The structure according to 5., wherein the bond capable of forming a hydrogen bond in or between molecules is represented by the following formula (1), and the substituent capable of forming a hydrogen bond in or between molecules is A group selected from the group consisting of a hydroxyl group, a thiol group, an amine group, and a carboxyl group.
7. 一種光取出膜,其特徵為由如1.~6.中任一項之構造物所構成。 A light extraction film comprising the structure of any one of 1. to 6.
8. 一種電子裝置,其特徵為具有如7.之光取出膜。 8. An electronic device characterized by having a light extraction film as in 7.
9. 如8.之電子裝置,其為發光二極體。 9. An electronic device as in 8. It is a light emitting diode.
10. 一種構造物之形成方法,其係於表面具有凹凸之構造物之形成方法,其特徵為具有以下步驟。 A method of forming a structure, which is a method of forming a structure having irregularities on a surface, and is characterized by the following steps.
將含有下述(A)成分及下述(B)成分之構造物形成用組成物塗佈於基材上之塗布步驟、於塗布步驟之後待機放置之待機放置步驟,及待機放置步驟之後進行燒成之燒成步驟。 The coating step of applying the composition for forming a structure of the following component (A) and the component (B) to the substrate, the standby step of standing after the application step, and the step of standing after the step of baking Into the firing step.
(A)成分:由聚醯亞胺所構成之第1聚合物或由聚醯亞胺前驅物所構成之第1聚合物前驅物。 Component (A): a first polymer composed of polyimine or a first polymer precursor composed of a polyimide precursor.
(B)成分:與(A)成分相異之第2聚合物或第2 聚合物前驅物,及,丙二醇單甲基醚之至少一者。 (B) component: the second polymer or the second component different from the component (A) At least one of a polymer precursor, and propylene glycol monomethyl ether.
本發明之於表面具有凹凸之構造物係可藉由將含有聚醯亞胺前驅物或聚醯亞胺以及一同含有其他聚合物或丙二醇單甲基醚之組成物塗佈於基材並放置及進行燒成使其自我組織化之容易方法而製造。例如,亦不需乾蝕刻步驟、高溫燒成步驟、高濕環境下之操作等複雜操作,且步驟數亦少。又,因再現性良好,可穩定地製造構造物。且,本發明之具有凹凸之構造物係可適用於例如OLED之光取出膜等、各種電子裝置。 The structure having irregularities on the surface of the present invention can be applied to a substrate by placing a composition containing a polyimide precursor or a polyimine and a polymer containing another polymer or propylene glycol monomethyl ether. It is manufactured by an easy method of firing to self-organize. For example, complicated operations such as a dry etching step, a high-temperature firing step, and a high-humidity operation are not required, and the number of steps is also small. Moreover, since the reproducibility is good, the structure can be stably produced. Further, the structure having irregularities of the present invention can be applied to various electronic devices such as a light extraction film of an OLED.
11‧‧‧透明基板 11‧‧‧Transparent substrate
12‧‧‧光取出膜 12‧‧‧Light removal film
13‧‧‧透明電極 13‧‧‧Transparent electrode
14‧‧‧電洞輸送層 14‧‧‧ hole transport layer
15‧‧‧發光層 15‧‧‧Lighting layer
16‧‧‧電極 16‧‧‧Electrode
〔圖1〕概要展示OLED之概略剖面圖 [Fig. 1] Outlined schematic cross-sectional view of an OLED
〔圖2〕實施例1之構造物表面之AFM像 [Fig. 2] AFM image of the surface of the structure of Example 1.
〔圖3〕實施例14之構造物表面之AFM像 [Fig. 3] AFM image of the surface of the structure of Example 14.
〔圖4〕比較例2之構造物表面之AFM像 [Fig. 4] AFM image of the surface of the structure of Comparative Example 2
以下,更詳細說明關於本發明。 Hereinafter, the present invention will be described in more detail.
本發明之構造物包含由聚醯亞胺所構成之第1聚合物,且於表面具有藉由此第1聚合物之自我組織化所形成之凹凸者。 The structure of the present invention comprises a first polymer composed of polyimine and has irregularities formed by self-organization of the first polymer on the surface.
本說明書中,自我組織化係意指、塗佈於基材上之聚醯亞胺或聚醯亞胺前驅物等之聚合物分子因自發性集合等成為凹凸進而作出具有圖型之構造。自我組織化並非係形成已決定之特定圖型,而係形成分形(Fractal)之圖型。尚且,已決定之特定圖型係指藉由光微影或壓印等之人為圖型形成方法所得之人為訂定之圖型,且基於欲連續取得相同圖型之技術。另一方面,以自我組織化而得之分形之圖型係指以曼德博集合所代表之幾何學之一部分,難以數學性地嚴密定義,但泛指人類可直覺地理解之圖型。自我組織化中係基於連續取得分形之圖型(即,由具有自我相似構造之集合所構成之圖型),且欲將取得之自我組織化膜之物性值收納於規格內之技術。 In the present specification, self-organizing means that a polymer molecule such as a polyimide or a polyimide precursor coated on a substrate has a pattern structure by causing irregularities such as spontaneous aggregation. Self-organization is not the formation of a specific pattern that has been determined, but the formation of a Fractal pattern. Further, the specific pattern that has been determined refers to an artificially-defined pattern obtained by a human pattern forming method such as photolithography or imprinting, and is based on a technique for continuously obtaining the same pattern. On the other hand, the self-organized fractal pattern refers to a part of the geometry represented by the Mandebo collection, which is difficult to define mathematically, but refers to the pattern that humans can intuitively understand. The self-organization is based on a technique of continuously obtaining a fractal pattern (that is, a pattern composed of a collection of self-similar structures), and is intended to store the physical property values of the obtained self-organized film in specifications.
藉由自我組織化所形成之分形之圖型之基本單位圖形係例如為點(dot)形狀、蚯蚓(worm)形狀、孔(Via)形狀等。由基本單位圖形及與其基本單位圖形之相似構造而成為分形之圖型。尚且,以AFM(原子間力顯微鏡、atomic force microscope)、SEM(掃描電子顯微鏡、scanning electron microscope)或TEM(穿透電子顯微鏡transmission electron microscope)測量時,基本單位圖形並無法在50μm見方之中確認時,則由分形之圖型之定義中除外。點形狀可舉出平面視之形狀為橢圓或圓之半球狀等。蚯蚓形狀可舉出如點形狀與點形狀連結連繋而成之形狀等。孔形狀可舉出在構造物之最表面開孔之形狀等。此等形狀之種類根據本發明之構造物之適用場所選 擇即可。又,基本單位圖形之種類只要1個以上即可,亦可組合複數之種類。 The basic unit pattern of the fractal pattern formed by self-organization is, for example, a dot shape, a worm shape, a Via shape, or the like. A pattern of fractals formed by a basic unit figure and a similar structure to its basic unit figure. Furthermore, when measured by AFM (atomic force microscope, SEM (scanning electron microscope) or TEM (transmission electron microscope), the basic unit pattern cannot be confirmed in 50 μm square. In addition, it is excluded from the definition of the fractal pattern. The shape of the dot may be a hemispherical shape such as an ellipse or a circle in a plan view. The shape of the crucible may be a shape in which a dot shape and a dot shape are connected to each other. The shape of the hole may be a shape such as an opening at the outermost surface of the structure. The types of such shapes are selected according to the applicable place of the structure of the present invention. Just choose. Further, the type of the basic unit figure may be one or more types, and the plural type may be combined.
本發明中引起自我組織化之要因為利用(i)聚合物之極性項、分散項或表面能量之差、(ii)聚合物對溶劑之溶解度之差、或、(iii)聚合物之吸濕性之差等者,只要能取得分形之圖型則無特別限定。 The self-organization is caused by the use of (i) the polarity term of the polymer, the difference in dispersion or surface energy, (ii) the difference in solubility of the polymer to the solvent, or (iii) the hygroscopicity of the polymer. The difference in sex, etc., is not particularly limited as long as the fractal pattern can be obtained.
本發明之構造物在表面上具有藉由自我組織化所形成之凹凸係例如凸部之平均高度為0.5nm~500nm。在此,凸部之平均高度係指以AFM測量時之平均表面粗度(Ra)所表示者。 The structure of the present invention has an unevenness such as a convex portion formed by self-organization on the surface, and has an average height of 0.5 nm to 500 nm. Here, the average height of the convex portions means the average surface roughness (R a ) measured by AFM.
較佳凸部之平均高度係根據適用場所而選擇即可。例如,在將本發明之構造物適用作為OLED中設置在玻璃等之透明基板與ITO(Indium Tin Oxide)等之透明電極之間之光取出膜時,考慮到短路特性,凸部之平均高度係以0.5nm~50nm為佳,較佳為0.5nm~30nm。又,將本發明之構造物適用作為設置於OLED之取出光之面(光取出面)之最前面之光取出膜時,凸部之平均高度係以40nm~500nm為佳。其係因為凸部之平均高度高於500nm時,則有喪失透明性,光取出效率變差之情況所致。 The average height of the preferred projections may be selected depending on the place of application. For example, when the structure of the present invention is applied as a light extraction film provided between a transparent substrate such as glass and a transparent electrode such as ITO (Indium Tin Oxide) in an OLED, the average height of the convex portion is considered in consideration of the short-circuit characteristics. It is preferably 0.5 nm to 50 nm, preferably 0.5 nm to 30 nm. Further, when the structure of the present invention is applied as a light extraction film provided on the front surface of the light-removing surface (light extraction surface) of the OLED, the average height of the convex portions is preferably 40 nm to 500 nm. When the average height of the convex portions is higher than 500 nm, the transparency is lost and the light extraction efficiency is deteriorated.
本發明之於表面具有凹凸之構造物係例如可藉由具有將含有上述(A)成分及上述(B)成分之構造物形成用組成物(以下,亦記載為清漆)塗佈於基材上之塗布步驟、於塗布步驟之後待機放置之待機放置步驟、待 機放置步驟之後進行燒成之燒成步驟之形成方法而得。 The structure having irregularities on the surface of the present invention can be applied to a substrate by, for example, a composition for forming a structure (hereinafter also referred to as a varnish) containing the component (A) and the component (B). Coating step, standby placement step after standby after the coating step, waiting After the machine is placed, the method of forming the firing step is performed.
(A)成分為聚醯亞胺(第1聚合物),或,因燒成而醯亞胺化成為聚醯亞胺(第1聚合物)之聚醯亞胺前驅物(第1聚合物前驅物)。即、(A)成分係在所製造之本發明之構造物中成為聚醯亞胺(第1聚合物)之成分。聚醯亞胺前驅物係指聚醯胺酸(亦稱為polyamic acid或polyamide acid)或聚醯胺酸酯等。尚且,(A)成分之聚醯亞胺或聚醯亞胺前驅物至今為止從未曾探討過作為自我組織化材料。 The component (A) is a polyimine (first polymer), or a polyimide precursor which is imidized into a polyimine (first polymer) by firing (first polymer precursor) ()). That is, the component (A) is a component of the polyimine (first polymer) in the structure of the present invention produced. Polyimine precursor refers to polyamic acid (also known as polyamic acid or polyamide acid) or polyamidomate. Further, the polyimine or polyimine precursor of the component (A) has never been discussed as a self-organizing material.
聚醯胺酸、聚醯胺酸酯等之聚醯亞胺前驅物係藉由使二胺成分與四羧酸成分進行反應而得者。聚醯胺酸酯係亦可藉由將聚醯胺酸之羧基變換成酯之方法而取得。且,藉由使此等聚醯胺酸或聚醯胺酸酯等之聚醯亞胺前驅物進行醯亞胺化而可取得聚醯亞胺。尚且,二胺成分可為1種類或亦可為2種類以上,又,四羧酸成分亦可為1種類或2種類以上。 A polyimide precursor such as polyamine or polyphthalamide is obtained by reacting a diamine component with a tetracarboxylic acid component. Polyammonium esters can also be obtained by a method of converting a carboxyl group of polylysine to an ester. Further, the polyimide can be obtained by subjecting the polyimine precursor such as polylysine or polyphthalate to ruthenium imidization. Further, the diamine component may be one type or two or more types, and the tetracarboxylic acid component may be one type or two or more types.
四羧酸成分係指選自四羧酸及四羧酸衍生物之至少一種。四羧酸衍生物係可舉出如四羧酸二鹵化物、四羧酸二酐、四羧酸二酯二氯化物、四羧酸二酯等。例如,藉由使四羧酸二鹵化物、四羧酸二酐等與二胺成分反應而可得到聚醯胺酸。又,藉由使四羧酸二酯二氯化物與二胺成分之反應,或使四羧酸二酯與二胺成分在適當之縮合劑或鹼之存在下等進行反應,而可取得聚醯胺酸酯。 The tetracarboxylic acid component means at least one selected from the group consisting of a tetracarboxylic acid and a tetracarboxylic acid derivative. The tetracarboxylic acid derivative may, for example, be a tetracarboxylic acid dihalide, a tetracarboxylic dianhydride, a tetracarboxylic acid diester dichloride or a tetracarboxylic acid diester. For example, polylysine can be obtained by reacting a tetracarboxylic acid dihalide, a tetracarboxylic dianhydride or the like with a diamine component. Further, by reacting a tetracarboxylic acid diester dichloride with a diamine component, or by reacting a tetracarboxylic acid diester with a diamine component in the presence of a suitable condensing agent or a base, a polyfluorene can be obtained. Amine ester.
四羧酸成分係可舉出如下述式(2)所示之四 羧酸二酐。 The tetracarboxylic acid component is exemplified by the following formula (2). Carboxylic dianhydride.
式(2)中,Z1之具體例係可舉出如下述式(2a)~式(2j)所表示之4價之有機基。 In the formula (2), specific examples of Z 1 include a tetravalent organic group represented by the following formulas (2a) to (2j).
式(2)中,在聚合反應性或合成之容易性 上,Z1之特佳構造為式(2a)、式(2c)、式(2d)、式(2e)、式(2f)或式(2g)。其中,亦以式(2a)、式(2e)、式(2f)或式(2g)為佳。 In the formula (2), in terms of polymerization reactivity or ease of synthesis, a particularly preferable structure of Z 1 is a formula (2a), a formula (2c), a formula (2d), a formula (2e), a formula (2f) or a formula. (2g). Among them, the formula (2a), the formula (2e), the formula (2f) or the formula (2g) is also preferred.
又,相對於四羧酸成分全量之式(2)所示之四羧酸二酐之比例並無特別限定,例如,以四羧酸成分全量之5~40莫耳%為上述式(2)所示之四羧酸二酐為佳,更佳為10~30莫耳%。 In addition, the ratio of the tetracarboxylic dianhydride represented by the formula (2) to the total amount of the tetracarboxylic acid component is not particularly limited, and for example, 5 to 40 mol% of the total amount of the tetracarboxylic acid component is the above formula (2). The tetracarboxylic dianhydride shown is preferred, more preferably 10 to 30 mol%.
上述式(2)所示之四羧酸二酐以外之其他四羧酸二酐,可舉出如苯均四酸、2,3,6,7-萘四羧酸、1,2,5,6-萘四羧酸、1,4,5,8-萘四羧酸、2,3,6,7-蒽四羧酸、1,2,5,6-蒽四羧酸、3,3’,4,4’-聯苯四羧酸、2,3,3’,4’-聯苯四羧酸、雙(3,4-二羧基苯基)醚、3,3’,4,4’-二苯甲酮四羧酸、雙(3,4-二羧基苯基)碸、雙(3,4-二羧基苯基)甲烷、2,2-雙(3,4-二羧基苯基)丙烷、1,1,1,3,3,3-六氟-2,2-雙(3,4-二羧基苯基)丙烷、雙(3,4-二羧基苯基)二甲基矽烷、雙(3,4-二羧基苯基)二苯基矽烷、2,3,4,5-吡啶四羧酸、2,6-雙(3,4-二羧基苯基)吡啶、3,3’,4,4’-二苯基碸四羧酸、3,4,9,10-苝四羧酸或1,3-二苯基-1,2,3,4-環丁烷四羧酸之二酐。 Examples of the other tetracarboxylic dianhydride other than the tetracarboxylic dianhydride represented by the above formula (2) include pyromellitic acid, 2,3,6,7-naphthalenetetracarboxylic acid, 1,2,5. 6-naphthalenetetracarboxylic acid, 1,4,5,8-naphthalenetetracarboxylic acid, 2,3,6,7-nonanetetracarboxylic acid, 1,2,5,6-nonanetetracarboxylic acid, 3,3' , 4,4'-biphenyltetracarboxylic acid, 2,3,3',4'-biphenyltetracarboxylic acid, bis(3,4-dicarboxyphenyl)ether, 3,3',4,4' - benzophenone tetracarboxylic acid, bis(3,4-dicarboxyphenyl)anthracene, bis(3,4-dicarboxyphenyl)methane, 2,2-bis(3,4-dicarboxyphenyl) Propane, 1,1,1,3,3,3-hexafluoro-2,2-bis(3,4-dicarboxyphenyl)propane, bis(3,4-dicarboxyphenyl)dimethyl decane, Bis(3,4-dicarboxyphenyl)diphenylnonane, 2,3,4,5-pyridinetetracarboxylic acid, 2,6-bis(3,4-dicarboxyphenyl)pyridine, 3,3' , 4,4'-diphenylphosphonium tetracarboxylic acid, 3,4,9,10-decanetetracarboxylic acid or 1,3-diphenyl-1,2,3,4-cyclobutanetetracarboxylic acid Diacid anhydride.
四羧酸二酯亦無特別限定。於以下舉出其具體例。 The tetracarboxylic acid diester is also not particularly limited. Specific examples thereof are given below.
脂肪族四羧酸二酯之具體例,可舉出如1,2,3,4-環丁烷四羧酸二烷基酯、1,2-二甲基-1,2,3,4-環丁烷四羧酸二烷基酯、1,3-二甲基-1,2,3,4-環丁烷四羧酸二烷基酯、 1,2,3,4-四甲基-1,2,3,4-環丁烷四羧酸二烷基酯、1,2,3,4-環戊烷四羧酸二烷基酯、2,3,4,5-四氫呋喃四羧酸二烷基酯、1,2,4,5-環己烷四羧酸二烷基酯、3,4-二羧基-1-環己基琥珀酸二烷基酯、3,4-二羧基-1,2,3,4-四氫-1-萘琥珀酸二烷基酯、1,2,3,4-丁烷四羧酸二烷基酯、聯環〔3,3,0〕辛烷-2,4,6,8-四羧酸二烷基酯、3,3’,4,4’-二環己基四羧酸二烷基酯、2,3,5-三羧基環戊基乙酸二烷基酯、順-3,7-二丁基環辛-1,5-二烯-1,2,5,6-四羧酸二烷基酯、三環〔4.2.1.02,5〕壬烷-3,4,7,8-四羧酸-3,4:7,8-二烷基酯、六環〔6.6.0.12,7.03,6.19,14.010,13〕十六烷-4,5,11,12-四羧酸-4,5:11,12-二烷基酯、4-(2,5-二氧代四氫呋喃-3-基)-1,2,3,4-四氫萘-1,2-二香旱芹酮二烷基酯等。 Specific examples of the aliphatic tetracarboxylic acid diester include 1,2,3,4-cyclobutanetetracarboxylic acid dialkyl ester and 1,2-dimethyl-1,2,3,4-. Dialkyl cyclobutane tetracarboxylate, dialkyl 1,3-dimethyl-1,2,3,4-cyclobutanetetracarboxylate, 1,2,3,4-tetramethyl- 1,2,3,4-cyclobutane tetracarboxylic acid dialkyl ester, 1,2,3,4-cyclopentane tetracarboxylic acid dialkyl ester, 2,3,4,5-tetrahydrofuran tetracarboxylic acid Dialkyl ester, 1,2,4,5-cyclohexanetetracarboxylic acid dialkyl ester, 3,4-dicarboxy-1-cyclohexyl succinic acid dialkyl ester, 3,4-dicarboxyl-1 , 2,3,4-tetrahydro-1-naphthalene succinate dialkyl ester, 1,2,3,4-butane tetracarboxylic acid dialkyl ester, bicyclo[3,3,0]octane- Dialkyl 2,4,6,8-tetracarboxylate, dialkyl 3,3',4,4'-dicyclohexyltetracarboxylate, 2,3,5-tricarboxycyclopentylacetic acid Alkyl ester, cis-3,7-dibutylcyclooctane-1,5-diene-1,2,5,6-tetracarboxylic acid dialkyl ester, tricyclo[4.2.1.0 2,5 ]壬Alkane-3,4,7,8-tetracarboxylic acid-3,4:7,8-dialkyl ester, hexacyclohexane [6.6.0.1 2,7 .0 3,6 .1 9,14 .0 10, 13 ] hexadecane-4,5,11,12-tetracarboxylic acid-4,5:11,12-dialkyl ester, 4-(2,5-dioxotetrahydrofuran-3-yl)-1, 2,3,4-tetrahydronaphthalene-1,2-dixiang celery Alkyl esters.
芳香族四羧酸二烷基酯係可舉出如苯均四酸二烷基酯、3,3’,4,4’-聯苯四羧酸二烷基酯、2,2’,3,3’-聯苯四羧酸二烷基酯、2,3,3’,4-聯苯四羧酸二烷基酯、3,3’,4,4’-二苯甲酮四羧酸二烷基酯、2,3,3’,4-二苯甲酮四羧酸二烷基酯、雙(3,4-二羧基苯基)醚二烷基酯、雙(3,4-二羧基苯基)碸二烷基酯、1,2,5,6-萘四羧酸二烷基酯、2,3,6,7-萘四羧酸二烷基酯等。 Examples of the aromatic tetracarboxylic acid dialkyl esters include dialkyl pyromellitic acid, dialkyl 3,3',4,4'-biphenyltetracarboxylate, and 2,2',3. Dialkyl 3'-biphenyltetracarboxylate, dialkyl 2,3,3',4-biphenyltetracarboxylate, 3,3',4,4'-benzophenonetetracarboxylic acid Alkyl ester, 2,3,3',4-dibenzophenone tetracarboxylic acid dialkyl ester, bis(3,4-dicarboxyphenyl)ether dialkyl ester, bis(3,4-dicarboxyl) Phenyl)decyl dialkyl ester, 1,2,5,6-naphthalene tetracarboxylic acid dialkyl ester, 2,3,6,7-naphthalene tetracarboxylic acid dialkyl ester, and the like.
與四羧酸成分反應之二胺成分並無特別限定,可使用一般性二胺。二胺成分係例如可舉出,p-苯二胺、2,3,5,6-四甲基-p-苯二胺、2,5-二甲基-p-苯二胺、m-苯二胺、2,4-二甲基-m-苯二胺、2,5-二胺基甲苯、2,6-二胺基甲苯、2,5-二胺基酚、2,4-二胺基酚、3,5-二胺基酚、 3,5-二胺基苄基醇、2,4-二胺基苄基醇、4,6-二胺基間苯二酚、4,4’-二胺基聯苯、3,3’-二甲基-4,4’-二胺基聯苯、3,3’-二甲氧基-4,4’-二胺基聯苯、3,3’-二羥基-4,4’-二胺基聯苯、3,3’-二羧基-4,4’-二胺基聯苯、3,3’-二氟-4,4’-聯苯、3,3’-三氟甲基-4,4’-二胺基聯苯、3,4’-二胺基聯苯、3,3’-二胺基聯苯、2,2’-二胺基聯苯、2,3’-二胺基聯苯、4,4’-二胺基二苯基甲烷、3,3’-二胺基二苯基甲烷、3,4’-二胺基二苯基甲烷、2,2’-二胺基二苯基甲烷、2,3’-二胺基二苯基甲烷、4,4’-二胺基二苯基醚、3,3’-二胺基二苯基醚、3,4’-二胺基二苯基醚、2,2’-二胺基二苯基醚、2,3’-二胺基二苯基醚、4,4’-磺醯基二苯胺、3,3’-磺醯基二苯胺、雙(4-胺基苯基)矽烷、雙(3-胺基苯基)矽烷、二甲基-雙(4-胺基苯基)矽烷、二甲基-雙(3-胺基苯基)矽烷、4,4’-硫代二苯胺、3,3’-硫代二苯胺、4,4’-二胺基二苯基胺、3,3’-二胺基二苯基胺、3,4’-二胺基二苯基胺、2,2’-二胺基二苯基胺、2,3’-二胺基二苯基胺、N-甲基(4,4’-二胺基二苯基)胺、N-甲基(3,3’-二胺基二苯基)胺、N-甲基(3,4’-二胺基二苯基)胺、N-甲基(2,2’-二胺基二苯基)胺、N-甲基(2,3’-二胺基二苯基)胺、4,4’-二胺基二苯甲酮、3,3’-二胺基二苯甲酮、3,4’-二胺基二苯甲酮、1,4-二胺基萘、2,2’-二胺基二苯甲酮、2,3’-二胺基二苯甲酮、1,5-二胺基萘、1,6-二胺基萘、1,7-二胺基萘、1,8-二胺基萘、2,5-二胺基萘、2,6-二胺基萘、2,7-二胺基萘、2,8-二胺基萘、1,2-雙(4-胺基苯基)乙烷、1,2-雙(3-胺基苯 基)乙烷、1,3-雙(4-胺基苯基)丙烷、1,3-雙(3-胺基苯基)丙烷、1,4-雙(4-胺基苯基)丁烷、1,4-雙(3-胺基苯基)丁烷、雙(3,5-二乙基-4-胺基苯基)甲烷、1,4-雙(4-胺基苯氧基)苯、1,3-雙(4-胺基苯氧基)苯、1,4-雙(4-胺基苯基)苯、1,3-雙(4-胺基苯基)苯、1,4-雙(4-胺基苄基)苯、1,3-雙(4-胺基苯氧基)苯、4,4’-〔1,4-伸苯基雙(亞甲基)〕二苯胺、4,4’-〔1,3-伸苯基雙(亞甲基)〕二苯胺、3,4’-〔1,4-伸苯基雙(亞甲基)〕二苯胺、3,4’-〔1,3-伸苯基雙(亞甲基)〕二苯胺、3,3’-〔1,4-伸苯基雙(亞甲基)〕二苯胺、3,3’-〔1,3-伸苯基雙(亞甲基)〕二苯胺、1,4-伸苯基雙〔(4-胺基苯基)甲酮〕、1,4-伸苯基雙〔(3-胺基苯基)甲酮〕、1,3-伸苯基雙〔(4-胺基苯基)甲酮〕、1,3-伸苯基雙〔(3-胺基苯基)甲酮〕、1,4-伸苯基雙(4-胺基苯甲酸酯)、1,4-伸苯基雙(3-胺基苯甲酸酯)、1,3-伸苯基雙(4-胺基苯甲酸酯)、1,3-伸苯基雙(3-胺基苯甲酸酯)、雙(4-胺基苯基)對酞酸酯、雙(3-胺基苯基)對酞酸酯、雙(4-胺基苯基)異酞酸酯、雙(3-胺基苯基)異酞酸酯、N,N’-(1,4-伸苯基)雙(4-胺基苄醯胺)、N,N’-(1,3-伸苯基)雙(4-胺基苄醯胺)、N,N’-(1,4-伸苯基)雙(3-胺基苄醯胺)、N,N’-(1,3-伸苯基)雙(3-胺基苄醯胺)、N,N’-雙(4-胺基苯基)對酞醯胺、N,N’-雙(3-胺基苯基)對酞醯胺、N,N’-雙(4-胺基苯基)異酞醯胺、N,N’-雙(3-胺基苯基)異酞醯胺、9,10-雙(4-胺基苯 基)蒽、4,4’-雙(4-胺基苯氧基)二苯基碸、2,2’-雙〔4-(4-胺基苯氧基)苯基〕丙烷、2,2’-雙〔4-(4-胺基苯氧基)苯基〕六氟丙烷、2,2’-雙(4-胺基苯基)六氟丙烷、2,2’-雙(3-胺基苯基)六氟丙烷、2,2’-雙(3-胺基-4-甲基苯基)六氟丙烷、2,2’-雙(4-胺基苯基)丙烷、2,2’-雙(3-胺基苯基)丙烷、2,2’-雙(3-胺基-4-甲基苯基)丙烷、3,5-二胺基安息香酸、2,5-二胺基安息香酸、1,3-雙(4-胺基苯氧基)丙烷、1,3-雙(3-胺基苯氧基)丙烷、1,4-雙(4-胺基苯氧基)丁烷、1,4-雙(3-胺基苯氧基)丁烷、1,5-雙(4-胺基苯氧基)戊烷、1,5-雙(3-胺基苯氧基)戊烷、1,6-雙(4-胺基苯氧基)己烷、1,6-雙(3-胺基苯氧基)己烷、1,7-雙(4-胺基苯氧基)庚烷、1,7-(3-胺基苯氧基)庚烷、1,8-雙(4-胺基苯氧基)辛烷、1,8-雙(3-胺基苯氧基)辛烷、1,9-雙(4-胺基苯氧基)壬烷、1,9-雙(3-胺基苯氧基)壬烷、1,10-(4-胺基苯氧基)癸烷、1,10-(3-胺基苯氧基)癸烷、1,11-(4-胺基苯氧基)十一烷、1,11-(3-胺基苯氧基)十一烷、1,12-(4-胺基苯氧基)十二烷、1,12-(3-胺基苯氧基)十二烷等之芳香族二胺、雙(4-胺基環己基)甲烷、雙(4-胺基-3-甲基環己基)甲烷等之脂環式二胺、1,3-二胺基丙烷、1,4-二胺基丁烷、1,5-二胺基戊烷、1,6-二胺基己烷、1,7-二胺基庚烷、1,8-二胺基辛烷、1,9-二胺基壬烷、1,10-二胺基癸烷、1,11-二胺基十一烷、1,12-二胺基十二烷等之脂肪族二胺等之泛用二胺。 The diamine component which reacts with the tetracarboxylic acid component is not particularly limited, and a general diamine can be used. Examples of the diamine component include p-phenylenediamine, 2,3,5,6-tetramethyl-p-phenylenediamine, 2,5-dimethyl-p-phenylenediamine, and m-benzene. Diamine, 2,4-dimethyl-m-phenylenediamine, 2,5-diaminotoluene, 2,6-diaminotoluene, 2,5-diaminophenol, 2,4-diamine Phenol, 3,5-diaminophenol, 3,5-diaminobenzyl alcohol, 2,4-diaminobenzyl alcohol, 4,6-diaminoresorcinol, 4,4'-diaminobiphenyl, 3,3'- Dimethyl-4,4'-diaminobiphenyl, 3,3'-dimethoxy-4,4'-diaminobiphenyl, 3,3'-dihydroxy-4,4'-di Aminobiphenyl, 3,3'-dicarboxy-4,4'-diaminobiphenyl, 3,3'-difluoro-4,4'-biphenyl, 3,3'-trifluoromethyl- 4,4'-diaminobiphenyl, 3,4'-diaminobiphenyl, 3,3'-diaminobiphenyl, 2,2'-diaminobiphenyl, 2,3'-di Aminobiphenyl, 4,4'-diaminodiphenylmethane, 3,3'-diaminodiphenylmethane, 3,4'-diaminodiphenylmethane, 2,2'-di Aminodiphenylmethane, 2,3'-diaminodiphenylmethane, 4,4'-diaminodiphenyl ether, 3,3'-diaminodiphenyl ether, 3,4' -diaminodiphenyl ether, 2,2'-diaminodiphenyl ether, 2,3'-diaminodiphenyl ether, 4,4'-sulfonyldiphenylamine, 3,3' - sulfonyldiphenylamine, bis(4-aminophenyl)decane, bis(3-aminophenyl)decane, dimethyl-bis(4-aminophenyl)decane, dimethyl-bis ( 3-aminophenyl)decane, 4,4'-thiodiphenylamine, 3,3'-thio Diphenylamine, 4,4'-diaminodiphenylamine, 3,3'-diaminodiphenylamine, 3,4'-diaminodiphenylamine, 2,2'-diamino Diphenylamine, 2,3'-diaminodiphenylamine, N-methyl(4,4'-diaminodiphenyl)amine, N-methyl (3,3'-diamino Diphenyl)amine, N-methyl(3,4'-diaminodiphenyl)amine, N-methyl(2,2'-diaminodiphenyl)amine, N-methyl (2 , 3'-diaminodiphenyl)amine, 4,4'-diaminobenzophenone, 3,3'-diaminobenzophenone, 3,4'-diaminodiphenyl Ketone, 1,4-diaminonaphthalene, 2,2'-diaminobenzophenone, 2,3'-diaminobenzophenone, 1,5-diaminonaphthalene, 1,6- Diaminonaphthalene, 1,7-diaminonaphthalene, 1,8-diaminonaphthalene, 2,5-diaminonaphthalene, 2,6-diaminonaphthalene, 2,7-diaminonaphthalene, 2,8-Diaminonaphthalene, 1,2-bis(4-aminophenyl)ethane, 1,2-bis(3-aminobenzene) Ethylene, 1,3-bis(4-aminophenyl)propane, 1,3-bis(3-aminophenyl)propane, 1,4-bis(4-aminophenyl)butane , 1,4-bis(3-aminophenyl)butane, bis(3,5-diethyl-4-aminophenyl)methane, 1,4-bis(4-aminophenoxy) Benzene, 1,3-bis(4-aminophenoxy)benzene, 1,4-bis(4-aminophenyl)benzene, 1,3-bis(4-aminophenyl)benzene, 1, 4-bis(4-aminobenzyl)benzene, 1,3-bis(4-aminophenoxy)benzene, 4,4'-[1,4-phenylenebis(methylene)] Aniline, 4,4'-[1,3-phenylenebis(methylene)]diphenylamine, 3,4'-[1,4-phenylenebis(methylene)]diphenylamine, 3, 4'-[1,3-Exophenylbis(methylene)]diphenylamine, 3,3'-[1,4-phenylenebis(methylene)]diphenylamine, 3,3'-[ 1,3-phenylphenylbis(methylene)]diphenylamine, 1,4-phenylphenylbis[(4-aminophenyl)methanone], 1,4-phenylene bis[(3- Aminophenyl)methanone], 1,3-phenylene bis[(4-aminophenyl)methanone], 1,3-phenylphenylbis[(3-aminophenyl)methanone] , 1,4-phenylene bis(4-aminobenzoate), 1,4-phenylene bis(3-aminobenzoate), 1,3-phenylene bis (4- Amino benzoate), 1,3-benzene Bis(3-aminobenzoic acid ester), bis(4-aminophenyl)paraphthalic acid ester, bis(3-aminophenyl)p-phthalate, bis(4-aminophenyl)iso Phthalate, bis(3-aminophenyl)isodecanoate, N,N'-(1,4-phenylene)bis(4-aminobenzylamine), N,N'-(1 , 3-phenylene) bis(4-aminobenzylbenzylamine), N,N'-(1,4-phenylene)bis(3-aminobenzamide), N,N'-(1 , 3-phenylene) bis(3-aminobenzamide), N,N'-bis(4-aminophenyl)-p-amine, N,N'-bis(3-aminophenyl) ) amidoxime, N,N'-bis(4-aminophenyl)isodecylamine, N,N'-bis(3-aminophenyl)isodecylamine, 9,10-bis ( 4-aminobenzene ,4,4'-bis(4-aminophenoxy)diphenylanthracene, 2,2'-bis[4-(4-aminophenoxy)phenyl]propane, 2,2 '-Bis[4-(4-Aminophenoxy)phenyl]hexafluoropropane, 2,2'-bis(4-aminophenyl)hexafluoropropane, 2,2'-bis(3-amine Phenylphenyl)hexafluoropropane, 2,2'-bis(3-amino-4-methylphenyl)hexafluoropropane, 2,2'-bis(4-aminophenyl)propane, 2,2 '-Bis(3-Aminophenyl)propane, 2,2'-bis(3-amino-4-methylphenyl)propane, 3,5-diaminobenzoic acid, 2,5-diamine Kean acid, 1,3-bis(4-aminophenoxy)propane, 1,3-bis(3-aminophenoxy)propane, 1,4-bis(4-aminophenoxy) Butane, 1,4-bis(3-aminophenoxy)butane, 1,5-bis(4-aminophenoxy)pentane, 1,5-bis(3-aminophenoxy) Pentane, 1,6-bis(4-aminophenoxy)hexane, 1,6-bis(3-aminophenoxy)hexane, 1,7-bis(4-aminophenoxyl) Heptane, 1,7-(3-aminophenoxy)heptane, 1,8-bis(4-aminophenoxy)octane, 1,8-bis(3-aminophenoxyl) Octane, 1,9-bis(4-aminophenoxy)decane, 1,9-bis(3-aminophenoxy)decane, 1,10-(4-aminophenoxyl) Decyl, 1,10-(3-amino Phenoxy)decane, 1,11-(4-aminophenoxy)undecane, 1,11-(3-aminophenoxy)undecane, 1,12-(4-amino group Aromatic diamines such as phenoxy)dodecane and 1,12-(3-aminophenoxy)dodecane, bis(4-aminocyclohexyl)methane, bis(4-amino-3) An alicyclic diamine such as -methylcyclohexyl)methane, 1,3-diaminopropane, 1,4-diaminobutane, 1,5-diaminopentane, 1,6-diamine Hexyl, 1,7-diaminoheptane, 1,8-diaminooctane, 1,9-diaminodecane, 1,10-diaminodecane, 1,11-diamine A general-purpose diamine such as an aliphatic diamine such as a decane or a 1,12-diaminododecane.
此般泛用二胺係以使用在聚醯胺酸之合成時所使用之二胺成分之50~95莫耳%之量為佳,更佳為二胺成分之70~90莫耳%。 The general use of the diamine is preferably from 50 to 95 mol% of the diamine component used in the synthesis of the polyamic acid, more preferably from 70 to 90 mol% of the diamine component.
又,二胺成分係可舉出如,在側鏈具有長鏈之烷基、於長鏈烷基之途中具有環構造分枝構造之基、類固醇基,或此等基之氫原子之一部或全部被氟原子所取代之基之二胺。具體而言,例如可舉出下述式(3)、(4)、(5)、(6)所表示之二胺,但並非係受此等所限定者。 Further, the diamine component may, for example, be an alkyl group having a long chain in a side chain, a group having a ring structure branching structure in the middle of a long chain alkyl group, a steroid group, or a hydrogen atom of such a group. Or a diamine which is entirely substituted by a fluorine atom. Specifically, for example, diamines represented by the following formulas (3), (4), (5), and (6) are exemplified, but are not limited thereto.
尚且,由合成容易性之觀點,上述式(3)中之R3係以-O-、-COO-、-CONH-、碳數1~3之伸烷基-醚基為佳。 Further, from the viewpoint of easiness of synthesis, R 3 in the above formula (3) is preferably an alkyl-ether group having -O-, -COO-, -CONH- or a carbon number of 1-3.
又,由合成容易性之觀點,式(3)中之R4、 R5及R6係以下述表1所示之l、m、n、R4、R5及R6之組合為佳。 Further, from the viewpoint of easiness of synthesis, R 4 , R 5 and R 6 in the formula (3) are preferably a combination of l, m, n, R 4 , R 5 and R 6 shown in the following Table 1.
且,l、m、n之至少一個為1時,式(3)中之R7較佳為氫原子或碳數2~14之烷基或含氟烷基,更佳為氫原子或碳數2~12之烷基或含氟烷基。又,l、m、n皆為0時,R7較佳為碳數12~22之烷基或含氟烷基、一價之芳香環、一價之脂肪族環、一價之雜環、由彼等所構成之一價之大環狀取代體,更佳為碳數12~20之烷基或含氟烷基。 Further, when at least one of l, m, and n is 1, R 7 in the formula (3) is preferably a hydrogen atom or an alkyl group having 2 to 14 carbon atoms or a fluorine-containing alkyl group, more preferably a hydrogen atom or a carbon number. 2~12 alkyl or fluoroalkyl. Further, when l, m, and n are all 0, R 7 is preferably an alkyl group having 12 to 22 carbon atoms or a fluorine-containing alkyl group, a monovalent aromatic ring, a monovalent aliphatic ring, and a monovalent heterocyclic ring. One of the large cyclic substituents constituting one of them is more preferably an alkyl group having 12 to 20 carbon atoms or a fluorine-containing alkyl group.
式(3)中之二個胺基(-NH2)之結合位置並無限定。具體地可舉出如,相對於側鏈(-R3-(R4)l-(R5)m-(R6)n-R7)而言,在苯環上之2,3之位置、2,4之位置、2,5之位置、2,6之位置、3,4之位置、3,5之位置。其中由合成聚醯胺酸時之反應性之觀點,亦以2,4之位置、2,5之位置或3,5之位置為佳。若加上合成二胺時之容易性,則以2,4之位置或3,5之位置為更佳。 The bonding position of the two amine groups (-NH 2 ) in the formula (3) is not limited. Specifically, for example, the position of 2, 3 on the benzene ring with respect to the side chain (-R 3 -(R 4 ) l -(R 5 ) m -(R 6 ) n -R 7 ) , 2, 4 position, 2, 5 position, 2, 6 position, 3, 4 position, 3, 5 position. Among them, from the viewpoint of reactivity in synthesizing poly-proline, the position of 2, 4, 2, 5 or 3, 5 is preferred. If the ease of synthesizing the diamine is added, the position of 2, 4 or 3, 5 is more preferable.
式(3)之具體構造可例示如下述之式〔A-1〕~式〔A-24〕所示之二胺,但並非係受限於此等者。 The specific structure of the formula (3) is exemplified by the diamines represented by the following formulas [A-1] to [A-24], but are not limited thereto.
式(4)所表示之二胺之具體例係可舉出如下述之式〔A-25〕~式〔A-30〕所示之二胺,但並非係受限於此等者。 Specific examples of the diamine represented by the formula (4) include a diamine represented by the following formula [A-25] to the formula [A-30], but are not limited thereto.
式(5)所表示之二胺之具體例係可舉出如下述之式〔A-31〕~式〔A-32〕所示之二胺,但並非係受此等限定者。 Specific examples of the diamine represented by the formula (5) include a diamine represented by the following formula [A-31] to the formula [A-32], but are not limited thereto.
此般在側鏈具有長鏈之烷基、於長鏈烷基之途中具有環構造或分枝構造之基、類固醇基,或此等基之氫原子之一部分或全部被氟原子取代之基之二胺,係以使用在聚醯胺酸之合成時所使用之二胺成分之0~50莫耳%之量為佳,更佳為二胺成分之10~40莫耳%。 Thus, the alkyl group having a long chain in the side chain, the group having a ring structure or a branched structure on the way of the long chain alkyl group, a steroid group, or a group in which one or all of the hydrogen atoms of the group are substituted by a fluorine atom The diamine is preferably used in an amount of from 0 to 50 mol%, more preferably from 10 to 40 mol%, based on the diamine component used in the synthesis of the polyamic acid.
又,二胺成分係可舉出具有光反應性基之二胺。具有光反應性基之二胺係可舉出,在具有乙烯基、丙 烯醯基、甲基丙烯醯基、烯丙基、苯乙烯基、肉桂基、查酮基、香豆素基、馬來醯亞胺基等之光反應性基作為側鏈之二胺,例如可舉出下述之一般式(7)所表示之二胺,但並非係受此等所限定者。 Further, the diamine component may be a diamine having a photoreactive group. A diamine having a photoreactive group is exemplified by having a vinyl group and a propylene group. a photoreactive group such as an alkylene group, a methacryloyl group, an allyl group, a styryl group, a cinnamyl group, a ketone group, a coumarin group or a maleimine group as a side chain diamine, for example The diamine represented by the following general formula (7) is mentioned, but it is not limited by these.
尚且,上述式(7)中之R8係能以通常之有機合成手法使其形成,但由合成容易性之觀點,則以-CH2-、-O-、-COO-、-NHCO-、-NH-、-CH2O-為佳。 Further, the R 8 in the above formula (7) can be formed by a usual organic synthesis method, but from the viewpoint of easiness of synthesis, -CH 2 -, -O-, -COO-, -NHCO-, -NH-, -CH 2 O- is preferred.
又,作為R9中替換任意之-CH2-之二價之碳環或二價之雜環之碳環或雜環,具體地可舉出如以下之構造,但並非係受限於此等者。 Further, as a carbon ring or a heterocyclic ring in which a divalent carbocyclic ring or a divalent heterocyclic ring of any -CH 2 - in R 9 is substituted, specifically, the following structures are mentioned, but are not limited thereto. By.
R10在由光反應性之觀點,以乙烯基、丙烯醯基、甲基丙烯醯基、烯丙基、苯乙烯基、-N(CH2CHCH2)2或下述式所表示之構造為佳。 R 10 is a structure represented by a vinyl group, an acrylonitrile group, a methacryl fluorenyl group, an allyl group, a styryl group, -N(CH 2 CHCH 2 ) 2 or a formula represented by the following formula from the viewpoint of photoreactivity. good.
又,上述式(7)之-R8-R9-R10較佳為下述之構造。 Further, -R 8 -R 9 -R 10 of the above formula (7) is preferably the structure described below.
式(7)中之二個胺基(-NH2)之結合位置並無限定。具體地可舉出,相對於側鏈(-R8-R9-R10)而言,在苯環上之2,3之位置、2,4之位置、2,5之位置、2,6之位置、3,4之位置、3,5之位置。其中,由合成聚醯胺酸時之反應性之觀點,以2,4之位置、2,5之位置、或3,5之位置為佳。若加上合成二胺時之容易性,亦以2,4之位置或3,5之位置為更佳。 The bonding position of the two amine groups (-NH 2 ) in the formula (7) is not limited. Specifically, with respect to the side chain (-R 8 -R 9 -R 10 ), the position of 2, 3 on the benzene ring, the position of 2, 4, the position of 2, 5, 2, 6 Position, 3, 4 position, 3, 5 position. Among them, from the viewpoint of reactivity in synthesizing poly-proline, the position of 2, 4, the position of 2, 5, or the position of 3, 5 is preferred. If the ease of synthesizing the diamine is added, it is preferably at the position of 2, 4 or 3, 5.
具有光反應性基之二胺,具體地可舉出如以下般之化合物,但並非係受此所限定者。 The diamine having a photoreactive group may specifically be a compound as described below, but is not limited thereto.
又,此般具有光反應性基之二胺係使用聚醯胺酸之合成時所使用之二胺成分之0~70莫耳%之量為佳,更佳為0~60莫耳%。 Further, the diamine having a photoreactive group is preferably used in an amount of from 0 to 70 mol%, more preferably from 0 to 60 mol%, of the diamine component used in the synthesis of polyamic acid.
二胺成分與四羧酸二酐成分之聚合反應,通常係在有機溶劑中進行。此時所使用之有機溶劑,只要係可溶解之聚醯胺酸等之聚醯亞胺前驅物者,則無特別限定。具體例可舉出如N,N-二甲基甲醯胺、N,N-二甲基乙醯胺、N-甲基-2-吡咯啶酮、N-甲基己內醯胺、二甲亞碸、四甲基脲、吡啶、二甲基碸、γ-丁內酯、異丙基醇、甲氧基甲基戊醇、二戊烯、乙基戊基酮、甲基壬基酮、甲基乙基酮、甲基異戊基酮、甲基異丙基酮、甲基溶纖劑、乙基溶纖劑、甲基溶纖劑乙酸酯、乙基溶纖劑乙酸酯、丁基卡必醇、乙基卡必醇、乙二醇、乙二醇單乙酸酯、乙二醇單異丙基醚、乙二醇單丁基醚、丙二醇、丙二醇單乙酸酯、丙二醇單甲基醚、丙二醇-tert-丁基醚、丙二醇單甲基醚、二乙二醇、二乙二醇單乙酸酯、二乙二醇二甲基醚、丙二醇單乙酸酯單甲基醚、丙二醇單甲基醚、丙二醇單乙基醚、丙二醇單乙酸酯單乙基醚、丙二醇單丙基醚、丙二醇單乙酸酯單丙基醚、3-甲基-3-甲氧基丁基乙酸酯、三丙二醇甲基醚、3-甲基-3-甲氧基丁醇、二異丙基醚、乙基異丁基醚、二異丁烯、戊基乙酸酯、丁基丁酸 酯、丁基醚、二異丁基酮、甲基環己烯、丙基醚、二己基醚、二噁烷、n-己烷、n-戊烷、n-辛烷、二乙基醚、環己酮、碳酸乙烯酯、碳酸丙烯酯、乳酸甲酯、乳酸乙酯、乙酸甲酯、乙酸乙酯、乙酸n-丁酯、乙酸丙二醇單乙基醚、丙酮酸甲酯、丙酮酸乙酯、3-甲氧基丙酸甲酯、3-乙氧基丙酸甲基乙酯、3-甲氧基丙酸乙酯、3-乙氧基丙酸、3-甲氧基丙酸、3-甲氧基丙酸丙酯、3-甲氧基丙酸丁酯、二乙二醇二甲醚或4-羥基-4-甲基-2-戊酮等。此等可單獨使用,亦可混合使用。並且,即使係不使聚醯亞胺前驅物溶解之溶劑,但只要在不使生成之聚醯亞胺前驅物析出之範圍內,仍亦可混合於上述溶劑中使用。又,有機溶劑中之水分由於會成阻礙聚合反應,並使生成之聚醯亞胺前驅物水解之原因,故有機溶劑係以使用經脫水乾燥者為佳。 The polymerization of the diamine component and the tetracarboxylic dianhydride component is usually carried out in an organic solvent. The organic solvent to be used at this time is not particularly limited as long as it is a polyimine precursor such as a soluble polyamine. Specific examples thereof include N,N-dimethylformamide, N,N-dimethylacetamide, N-methyl-2-pyrrolidone, N-methylcaprolactam, and dimethyl Azulene, tetramethylurea, pyridine, dimethyl hydrazine, γ-butyrolactone, isopropyl alcohol, methoxymethylpentanol, dipentene, ethyl amyl ketone, methyl decyl ketone, Methyl ethyl ketone, methyl isoamyl ketone, methyl isopropyl ketone, methyl cellosolve, ethyl cellosolve, methyl cellosolve acetate, ethyl cellosolve acetate, Butyl carbitol, ethyl carbitol, ethylene glycol, ethylene glycol monoacetate, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether, propylene glycol, propylene glycol monoacetate, propylene glycol Monomethyl ether, propylene glycol-tert-butyl ether, propylene glycol monomethyl ether, diethylene glycol, diethylene glycol monoacetate, diethylene glycol dimethyl ether, propylene glycol monoacetate monomethyl Ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monoacetate monoethyl ether, propylene glycol monopropyl ether, propylene glycol monoacetate monopropyl ether, 3-methyl-3-methoxy Butyl acetate, tripropylene glycol methyl ether, 3-methyl-3-methoxybutanol, Diisopropyl ether, ethyl isobutyl ether, diisobutylene, pentyl acetate, butyl butyrate Ester, butyl ether, diisobutyl ketone, methylcyclohexene, propyl ether, dihexyl ether, dioxane, n-hexane, n-pentane, n-octane, diethyl ether, Cyclohexanone, ethylene carbonate, propylene carbonate, methyl lactate, ethyl lactate, methyl acetate, ethyl acetate, n-butyl acetate, propylene glycol monoethyl ether, methyl pyruvate, ethyl pyruvate , 3-methoxypropionic acid methyl ester, 3-ethoxypropionic acid methyl ethyl ester, 3-methoxypropionic acid ethyl ester, 3-ethoxypropionic acid, 3-methoxypropionic acid, 3 - propyl methoxypropionate, butyl 3-methoxypropionate, diethylene glycol dimethyl ether or 4-hydroxy-4-methyl-2-pentanone. These may be used alone or in combination. Further, even if it is a solvent in which the polyimide precursor is not dissolved, it may be used in the above solvent as long as it does not precipitate the formed polyimide precursor. Further, since the water in the organic solvent hinders the polymerization reaction and causes the produced polyimide precursor to be hydrolyzed, it is preferred that the organic solvent be dried by dehydration.
使二胺成分與四羧酸成分在有機溶劑中反應時,可舉出如攪拌在有機溶液中分散或溶解有二胺成分之溶液,將四羧酸成分直接添加於該溶液,或將使四羧酸成分分散或溶解於有機溶劑後進行添加之方法,相反地對使在有機溶劑中分散或溶解有四羧酸成分之溶液添加二胺成分之方法,交替地添加四羧酸成分與二胺成分之方法等,可使用此等之任一之方法。又,使用複數種類之二胺成分或四羧酸成分進行反應時,可在預先混合之狀態下使其反應,可依個別順序使其反應,且亦可使個別經反應之低分子量體進行混合反應。此時之聚合溫度可選自-20℃~150℃中之任意溫度,但較佳為-5℃~100℃之範圍。又,反應 可在任意之濃度下進行,但若濃度過低時則變得難以取得高分子量之聚醯亞胺前驅物(乃至於聚醯亞胺),若濃度過高時則因反應液之黏性變得過高而難以均勻攪拌。因此,二胺成分及四羧酸成分之總量之濃度,在反應液中較佳為1~50質量%,更佳為5~30質量%。反應初期以高濃度進行,其後可追加有機溶劑。 When the diamine component and the tetracarboxylic acid component are reacted in an organic solvent, a solution in which a diamine component is dispersed or dissolved in an organic solution, and a tetracarboxylic acid component is directly added to the solution, or a method in which a carboxylic acid component is dispersed or dissolved in an organic solvent, and a method of adding a carboxylic acid component to a solution in which a tetracarboxylic acid component is dispersed or dissolved in an organic solvent is added, and a tetracarboxylic acid component and a diamine are alternately added. Any of these methods can be used as the method of the component or the like. Further, when a plurality of kinds of diamine components or tetracarboxylic acid components are used for the reaction, the reaction can be carried out in a state of being mixed beforehand, and the reaction can be carried out in an individual order, or the individual reacted low molecular weight bodies can be mixed. reaction. The polymerization temperature at this time may be selected from any of -20 ° C to 150 ° C, but preferably in the range of -5 ° C to 100 ° C. Again, the reaction It can be carried out at any concentration, but if the concentration is too low, it becomes difficult to obtain a high molecular weight polyimine precursor (or even a polyimide), and if the concentration is too high, the viscosity of the reaction liquid changes. It is too high to stir evenly. Therefore, the concentration of the total amount of the diamine component and the tetracarboxylic acid component is preferably from 1 to 50% by mass, more preferably from 5 to 30% by mass, based on the total amount of the reaction solution. The initial stage of the reaction is carried out at a high concentration, and thereafter an organic solvent can be added.
聚醯胺酸等之聚醯亞胺前驅物之聚合反應中,二胺成分之合計莫耳數與四羧酸成分之合計莫耳數之比係以0.8~1.2為佳。與通常之縮聚合反應同樣,此莫耳比越趨近1.0時所生成之聚醯亞胺前驅物之分子量變大。 In the polymerization reaction of the polyimine precursor such as polylysine, the ratio of the total number of moles of the diamine component to the total number of moles of the tetracarboxylic acid component is preferably 0.8 to 1.2. As with the usual polycondensation reaction, the molecular weight of the polyimine precursor formed when the molar ratio approaches 1.0 becomes large.
尚且,聚醯胺酸酯係如上述般,可藉由四羧酸二酯二氯化物與二胺成分之反應,或使四羧酸二酯與二胺成分在適當縮合劑、鹼之存在下進行反應而得。或,亦能以上述之方法預先合成聚醯胺酸,利用高分子反應使聚醯胺酸之羧基進行酯化而得。 Further, the polyglycolate may be reacted by a tetracarboxylic acid diester dichloride with a diamine component, or a tetracarboxylic acid diester and a diamine component in the presence of a suitable condensing agent or a base, as described above. Get the reaction. Alternatively, the polyamic acid can be synthesized in advance by the above method, and the carboxyl group of the polylysine can be esterified by a polymer reaction.
具體而言,例如,藉由使四羧酸二酯二氯化物與二胺成分在鹼與有機溶劑之存在下,於-20℃~150℃,較佳為0℃~50℃中,反應30分~24小時,較佳反應1小時~4小時反應而合成聚醯胺酸酯。 Specifically, for example, by reacting the tetracarboxylic acid diester dichloride and the diamine component in the presence of a base and an organic solvent at -20 ° C to 150 ° C, preferably 0 ° C to 50 ° C, the reaction 30 The polyphthalate is synthesized by reacting for ~24 hours, preferably for 1 hour to 4 hours.
鹼係可使用吡啶、三乙基胺、4-二甲基胺基吡啶,但為使反應穩和地進行則以吡啶為佳。由可容易去除之量且容易取得高分子量體之觀點,鹼之添加量相對於四羧酸二酯二氯化物係以2~4倍莫耳為佳。 As the base, pyridine, triethylamine or 4-dimethylaminopyridine can be used, but in order to carry out the reaction stably, pyridine is preferred. From the viewpoint of being easily removable and easily obtaining a high molecular weight body, the amount of the base added is preferably 2 to 4 moles per mole of the tetracarboxylic acid diester dichloride system.
又,使四羧酸二酯與二胺成分在縮合劑存在 下進行縮聚合時,作為鹼則係可使用三苯基亞磷酸酯、二環己基碳二醯亞胺、1-乙基-3-(3-二甲基胺基丙基)碳二醯亞胺鹽酸鹽、N,N’-羰基二咪唑、二甲氧基-1,3,5-三嗪基甲基嗎啉鎓鹽、O-(苯并三唑-1-基)-N,N,N’,N’-四甲基脲鎓四氟硼酸鹽、O-(苯并三唑-1-基)-N,N,N’,N’-四甲基脲鎓六氟磷酸鹽、(2,3-二氫-2-硫酮基-3-苯并噁唑)膦酸二苯基、氯化4-(4,6-二甲氧基-1,3,5-三嗪-2-基)4-甲氧基嗎啉n-水合物等。 Further, the tetracarboxylic acid diester and the diamine component are present in the condensing agent When the condensation polymerization is carried out, triphenyl phosphite, dicyclohexylcarbodiimide, 1-ethyl-3-(3-dimethylaminopropyl)carbodiimide can be used as the base. Amine hydrochloride, N,N'-carbonyldiimidazole, dimethoxy-1,3,5-triazinylmethylmorpholinium salt, O-(benzotriazol-1-yl)-N, N,N',N'-tetramethyluronium tetrafluoroborate, O-(benzotriazol-1-yl)-N,N,N',N'-tetramethyluronium hexafluorophosphate , (2,3-dihydro-2-thioketo-3-benzoxazole)phosphonic acid diphenyl, 4-(4,6-dimethoxy-1,3,5-triazine chloride -2-yl) 4-methoxymorpholine n-hydrate and the like.
又,上述使用縮合劑之方法中,藉由加入路易士酸作為添加劑,而可使反應有效率地進行。路易士酸係以氯化鋰、溴化鋰等之鹵化鋰為佳。路易士酸之添加量係相於使其反應之二胺或四羧酸二酯而言,以0.1~1.0倍莫耳量為佳。 Further, in the above method using a condensing agent, the reaction can be efficiently carried out by adding Lewis acid as an additive. The Lewis acid is preferably lithium halide such as lithium chloride or lithium bromide. The addition amount of Lewis acid is preferably 0.1 to 1.0 times the molar amount of the diamine or tetracarboxylic acid diester which is reacted.
上述反應所使用之溶劑係可以與在上述例示之在合成聚醯胺酸使所用之溶劑同樣之溶劑下進行,但從單體及聚合物之溶解性,以N-甲基-2-吡咯啶酮、γ-丁內酯為佳,此等可使用1種或亦可將2種以上混合使用。合成時之濃度在從不易引起聚合物之析出,且容易取得高分子量體之觀點,四羧酸成分與二胺成分在反應溶液中之合計濃度係以1~30質量%為佳,以5~20質量%為較佳。又,為了防止四羧酸二酯二氯化物之水解,合成聚醯胺酸酯所使用之溶劑係以盡可能受到脫水為宜,且在氮環境中防止外氣之混入為佳。 The solvent used in the above reaction may be carried out in the same solvent as the above-exemplified solvent for synthesizing polyamic acid, but the solubility from the monomer and the polymer is N-methyl-2-pyrrolidine. The ketone and γ-butyrolactone are preferred, and one type of these may be used or two or more types may be used in combination. The concentration at the time of the synthesis is preferably from 1 to 30% by mass in terms of the total concentration of the tetracarboxylic acid component and the diamine component in the reaction solution from the viewpoint that the precipitation of the polymer is less likely to occur and the high molecular weight body is easily obtained. 20% by mass is preferred. Further, in order to prevent hydrolysis of the tetracarboxylic acid diester dichloride, the solvent used for synthesizing the polyphthalate is preferably dehydrated as much as possible, and it is preferable to prevent the incorporation of outside air in a nitrogen atmosphere.
藉此受到聚合之聚醯亞胺前驅物係例如為具 有下述式〔a〕所示之重複單位之聚合物。 The polyimine precursor precursor which is thereby polymerized is, for example, a A polymer having a repeating unit represented by the following formula [a].
上述式〔a〕中,R11及R12分別為單1種類且亦可為具有相同重複單位之聚合物,又,R11或R12為複數種類且亦可為具有相異構造之重複單位之聚合物。 In the above formula [a], R 11 and R 12 are each a single type and may also be a polymer having the same repeating unit, and R 11 or R 12 may be a plural type and may also be a repeating unit having a different structure. The polymer.
上述式〔a〕中,R11為源自原料之下述式〔c〕等所示之四羧酸成分之基。又,R12為源自原料之下述式〔b〕等所示之二胺成分之基。 In the above formula [a], R 11 is a group derived from a tetracarboxylic acid component represented by the following formula [c] or the like which is derived from a raw material. Further, R 12 is a group derived from a diamine component represented by the following formula [b] or the like which is derived from a raw material.
且,藉由使此般聚醯亞胺前驅物脫水閉環而可取得聚醯亞胺。 Further, the polyimine can be obtained by dehydrating and ring-closing the polyimide precursor.
使聚醯亞胺前驅物進行醯亞胺化之方法,可舉出如直接加熱聚醯亞胺前驅物之溶液而使其熱醯亞胺化,或對聚醯亞胺前驅物之溶液添加觸媒而使其觸媒醯亞胺化。 The method for carrying out the hydrazine imidization of the polyimine precursor may be, for example, directly heating the solution of the polyimide precursor to thermally imidize the solution, or adding a contact to the solution of the polyimide precursor The medium causes the catalyst to be imidized.
使聚醯亞胺前驅物在溶液中進行熱醯亞胺化時之溫度為100℃~400℃,較佳為120℃~250℃,且以將因醯亞胺化反應而生成之水排除至系統外之同時下進行為佳。 The temperature at which the polyimine precursor is thermally imidated in the solution is from 100 ° C to 400 ° C, preferably from 120 ° C to 250 ° C, and the water formed by the imidization reaction is excluded. It is better to carry out the system at the same time.
聚醯亞胺前驅物之觸媒醯亞胺化係藉由對聚醯亞胺前驅物之溶液添加鹼性觸媒與酸酐,在-20~250℃下,較佳在0~180℃下進行攪拌而施行。鹼性觸媒之量為醯胺酸基之0.5~30莫耳倍,較佳為2~20莫耳倍,酸酐之量為醯胺酸基之1~50莫耳倍,較佳為3~30莫耳倍。鹼性觸媒係可舉出如吡啶、三乙基胺、三甲基胺、三丁基胺或三辛基胺等,其中因吡啶具有使反應之適度鹼性而為佳。酸酐係可舉出如無水乙酸、無水偏苯三甲酸或無水苯均四酸等,其中因使用無水乙酸時則反應結束後之純化會變得容易而故為佳。觸媒醯亞胺化所成之醯亞胺化率係藉由調節觸媒量與反應溫度、反應時間而進行控制。 The ruthenium imidization of the polyimide precursor is carried out by adding a basic catalyst and an acid anhydride to the solution of the polyimide precursor, at -20 to 250 ° C, preferably at 0 to 180 ° C. Stir and carry out. The amount of the alkaline catalyst is 0.5 to 30 moles, preferably 2 to 20 moles, of the prolyl group, and the amount of the anhydride is 1 to 50 moles of the amidate group, preferably 3 to 30 moles. The basic catalyst may, for example, be pyridine, triethylamine, trimethylamine, tributylamine or trioctylamine. Among them, pyridine has a moderate alkalinity in the reaction. Examples of the acid anhydride include anhydrous acetic acid, anhydrous trimellitic acid or anhydrous pyromellitic acid. Among them, when anhydrous acetic acid is used, purification after completion of the reaction becomes easy. The imidization ratio of the ruthenium imidization is controlled by adjusting the amount of the catalyst, the reaction temperature, and the reaction time.
尚且,在回收聚醯胺酸、聚醯胺酸酯等之聚醯亞胺前驅物,或從聚醯亞胺之反應溶液中回收生成之聚醯亞胺前驅物或聚醯亞胺時,將反應溶液投入於溶劑中使 其沉澱即可。沉澱所使用之溶劑可舉出如甲醇、丙酮、己烷、丁基溶纖劑、庚烷、甲基乙基酮、甲基異丁基酮、乙醇、甲苯、苯或水等。投入溶劑使沉澱後之聚醯亞胺前驅物或聚醯亞胺經過濾過而回收後,可在常壓或減壓下,常溫乾燥或加熱乾燥。又,使經沉澱回收之聚醯亞胺前驅物或聚醯亞胺再溶解於有機溶劑中,重複2~10次再沉澱回收,即可減少聚醯亞胺前驅物或聚醯亞胺中之雜質。此時之溶劑係例如可舉出醇類、酮類或烴等,若使用選自此等此等之中3種類以上之溶劑時,因可更加提升純化之效率,故為佳。 Further, when recovering the polyamidiamine precursor of polylysine, polyphthalamide or the like, or recovering the produced polyimine precursor or polyimine from the reaction solution of polyimine, The reaction solution is put into a solvent to make It can be precipitated. The solvent used for the precipitation may, for example, be methanol, acetone, hexane, butyl cellosolve, heptane, methyl ethyl ketone, methyl isobutyl ketone, ethanol, toluene, benzene or water. After the solvent is introduced, the precipitated polyimine precursor or polyimine is recovered by filtration, and then dried at room temperature or under reduced pressure at normal temperature or under reduced pressure. Further, the precipitated polyimine precursor or polyimine is redissolved in an organic solvent, and the reprecipitation is repeated 2 to 10 times to reduce the polyimine precursor or polyimine. Impurities. In the case of the solvent, for example, an alcohol, a ketone or a hydrocarbon may be used. When a solvent selected from three or more types selected from the above is used, the efficiency of purification can be further improved.
聚醯亞胺之醯胺酸基之脫水閉環率(醯亞胺化率)並不必須為100%,可因應用途或目的在0%至100%之範圍內任意選擇,但50%~100%為佳。 The dehydration ring closure ratio of the amidino group of the polyimine is not necessarily 100%, and may be arbitrarily selected in the range of 0% to 100% depending on the purpose or purpose, but 50% to 100%. It is better.
聚醯亞胺前驅物或聚醯亞胺之分子量,在考量到對溶劑之溶解性時,由GPC(Gel Permeation Chromatography)法所測量之重量平均分子量,以設在5,000~1,000,000為佳,較佳為10,000~150,000。重量平均分子量若低於5,000時,則有溶解性變高而變得難以取得構造物之情況。又,重量平均分子量若高於1,000,000時,則有對溶劑之溶解性下降,而無法取得聚合物溶液之情況。 The molecular weight of the polyimine precursor or the polyimine, when considering the solubility in a solvent, the weight average molecular weight measured by the GPC (Gel Permeation Chromatography) method is preferably 5,000 to 1,000,000, preferably. It is 10,000~150,000. When the weight average molecular weight is less than 5,000, the solubility may become high and it may become difficult to obtain a structure. Further, when the weight average molecular weight is more than 1,000,000, the solubility in a solvent may be lowered, and the polymer solution may not be obtained.
又,(B)成分係為與(A)成分相異之第2聚合物或第2聚合物前驅物、及、丙二醇單甲基醚之至少一者。 Further, the component (B) is at least one of a second polymer, a second polymer precursor, and a propylene glycol monomethyl ether which are different from the component (A).
第2聚合物可舉出,與(A)成分相異之聚醯亞胺,或聚矽氧烷、聚丙烯酸、三乙醯基纖維素、聚對酞酸乙二酯、環烯烴(共)聚合物、聚乙烯醇、聚碳酸酯、聚苯乙烯、聚醯胺、聚烯烴、聚丙烯、聚乙烯、聚萘二甲酸乙二酯、聚醚碸等。第2聚合物前驅物可舉出如因燒成進行醯亞胺化而成為聚醯亞胺(第2聚合物)之聚醯亞胺前驅物。第2聚合物或第2聚合物前驅物之分子量在考量到對溶劑之溶解性時,由GPC法所測量之重量平均分子量係以設在5,000~1,000,000為佳,更佳為10,000~150,000。又,在考量濺鍍等之耐性等時,以聚醯亞胺或聚醯亞胺前驅物為佳。作為(B)成分之聚醯亞胺或聚醯亞胺前驅物,可舉出如與在上述第1聚合物及第1聚合物前驅物中例示者相同之聚醯亞胺或聚醯亞胺前驅物。當然必須係與(A)成分相異之聚醯亞胺或聚醯亞胺前驅物。 The second polymer may, for example, be a polyimine different from the component (A), or a polysiloxane, a polyacrylic acid, a triethyl fluorenyl cellulose, a polyethylene terephthalate or a cycloolefin (total). Polymer, polyvinyl alcohol, polycarbonate, polystyrene, polyamine, polyolefin, polypropylene, polyethylene, polyethylene naphthalate, polyether oxime, and the like. The second polymer precursor may be a polyimine precursor which is a polyimine (second polymer) by imidization by firing. When the molecular weight of the second polymer or the second polymer precursor is considered to be solubility in a solvent, the weight average molecular weight measured by the GPC method is preferably 5,000 to 1,000,000, more preferably 10,000 to 150,000. Further, in consideration of resistance such as sputtering, a polyimide or a polyimide precursor is preferred. The polyimine or polyimine precursor of the component (B) may, for example, be the same as the polyimine or polyimine which is exemplified in the first polymer and the first polymer precursor. Precursor. Of course, it is necessary to use a polyimine or a polyimide precursor which is different from the component (A).
在此,(B)成分包含第2聚合物或第2聚合物前驅物時,第1聚合物或第1聚合物前驅物、及、第2聚合物或第2聚合物前驅物之至少一者係以具有選自能於分子內或分子間形成氫鍵之鍵結、及、能於分子內或分子間形成氫鍵之取代基之至少一種為佳。其係因為較能容易產生自我組織化。尚且,如此第1聚合物或第1聚合物前驅物、及、第2聚合物或第2聚合物前驅物之至少一者在具有選自能於分子內或分子間形成氫鍵之鍵結、及、能於分子內或分子間形成氫鍵之取代基之至少一種時,則取得之本發明之構造物成為具有第1聚合物及第2聚合物,且 第1聚合物及第2聚合物之至少一者具有選自能於分子內或分子間形成氫鍵之鍵結、及、能於分子內或分子間形成氫鍵之取代基之至少一種者。 Here, when the component (B) includes the second polymer or the second polymer precursor, at least one of the first polymer or the first polymer precursor and the second polymer or the second polymer precursor It is preferred to have at least one selected from the group consisting of a bond capable of forming a hydrogen bond in or between molecules, and a substituent capable of forming a hydrogen bond in or between molecules. It is because it is easier to self-organize. Further, at least one of the first polymer or the first polymer precursor and the second polymer or the second polymer precursor has a bond selected from a group capable of forming a hydrogen bond in or between molecules. And at least one of the substituents capable of forming a hydrogen bond in the molecule or in the molecule, the obtained structure of the present invention has the first polymer and the second polymer, and At least one of the first polymer and the second polymer has at least one selected from the group consisting of a bond capable of forming a hydrogen bond in a molecule or a molecule, and a substituent capable of forming a hydrogen bond in or between molecules.
能於分子內或分子間形成氫鍵之鍵結係可舉出如上述式(1)所表示之2價之基。又,能於分子內或分子間形成氫鍵之取代基係可舉出如羥基、硫醇基、胺基、羧基。 The bond system capable of forming a hydrogen bond in a molecule or a molecule may be a divalent group represented by the above formula (1). Further, examples of the substituent capable of forming a hydrogen bond in the molecule or in the molecule include a hydroxyl group, a thiol group, an amine group, and a carboxyl group.
此般能於分子內或分子間形成氫鍵之鍵結,或能於分子內或分子間形成氫鍵之取代基係例如可藉由將具有此等鍵結或取代基之二胺成分或四羧酸成分作成原料,而導入於聚醯亞胺或聚醯亞胺前驅物中。 Thus, a bond capable of forming a hydrogen bond in a molecule or a molecule, or a substituent capable of forming a hydrogen bond in or between molecules can be, for example, a diamine component or a tetra group having such a bond or substituent The carboxylic acid component is used as a raw material and introduced into a polyimide or a polyimide precursor.
(A)成分與(B)成分之混合比例只要可產生自我組織化,則無特別限定,例如,(B)成分為第2聚合物或第2聚合物前驅物時,以(A)成分:(B)成分=40~60:60~40(質量比)為佳,特佳為(A)成分:(B)成分=45~55:55~45(質量比)。又,(B)成分為丙二醇單甲基醚時,於構造物形成用組成物(清漆)中在不析出聚合物之範圍內選擇,即無特別限定,但以(A)成分:(B)成分=99~70:1~30(質量比)為佳。 The mixing ratio of the component (A) and the component (B) is not particularly limited as long as it can be self-organized. For example, when the component (B) is the second polymer or the second polymer precursor, the component (A): (B) Component = 40 to 60: 60 to 40 (mass ratio) is preferred, and particularly preferred is (A) component: (B) component = 45 to 55: 55 to 45 (mass ratio). In addition, when the component (B) is propylene glycol monomethyl ether, it is selected in the range of not depositing a polymer in the structure for forming a structure (varnish), that is, it is not particularly limited, but the component (A): (B) Composition = 99~70: 1~30 (mass ratio) is better.
構造物形成用組成物可含有第1聚合物、第1聚合物前驅物、第2聚合物或第2聚合物前驅物以外之其他聚合物。以下,將第1聚合物、第1聚合物前驅物、第2聚合物、第2聚合物前驅物、其他聚合物統合皆記載為聚合物成分。作為其他聚合物,可舉出第1聚合物、第1 聚合物前驅物、第2聚合物或第2聚合物前驅物以外之聚醯亞胺前驅物、聚醯亞胺、聚矽氧烷、聚丙烯酸、三乙醯基纖維素、聚對酞酸乙二酯、環烯烴(共)聚合物、聚乙烯醇、聚碳酸酯、聚苯乙烯、聚醯胺、聚烯烴、聚丙烯、聚乙烯、聚萘二甲酸乙二酯、聚醚碸等。 The structure-forming composition may contain a polymer other than the first polymer, the first polymer precursor, the second polymer, or the second polymer precursor. Hereinafter, the first polymer, the first polymer precursor, the second polymer, the second polymer precursor, and other polymers are collectively described as a polymer component. Examples of the other polymer include a first polymer and a first polymer. a polymer precursor, a second polymer or a second polymer precursor other than a polyimide precursor, a polyimine, a polyoxyalkylene, a polyacrylic acid, a triethylenesulfonyl cellulose, a polyparaphthalic acid Diester, cycloolefin (co)polymer, polyvinyl alcohol, polycarbonate, polystyrene, polyamine, polyolefin, polypropylene, polyethylene, polyethylene naphthalate, polyether oxime, and the like.
構造物形成用組成物含有其他聚合物時,聚合物成分全量中之其他聚合物之含有量為0.5質量%~50質量%,較佳為1質量%~30質量%。 When the composition for forming a structure contains another polymer, the content of the other polymer in the total amount of the polymer component is 0.5% by mass to 50% by mass, preferably 1% by mass to 30% by mass.
構造物形成用組成物中所含有之聚合物成分係以1質量%~20質量%為佳,較佳為3質量%~15質量%,特佳為3質量%~10質量%。 The polymer component contained in the structure for forming a structure is preferably 1% by mass to 20% by mass, more preferably 3% by mass to 15% by mass, particularly preferably 3% by mass to 10% by mass.
構造物形成用組成物中所含有之溶劑只要係可使第1聚合物、第1聚合物前驅物、第2聚合物或第2聚合物前驅物等之聚合物成分溶解之有機溶劑,即無特別限定。其具體例可舉出如N,N-二甲基甲醯胺、N,N-二甲基乙醯胺、N-甲基-2-吡咯啶酮、N-甲基己內醯胺、2-吡咯啶酮、N-乙基吡咯啶酮、N-乙烯基吡咯啶酮、二甲亞碸、四甲基脲、吡啶、二甲基碸、六甲亞碸、γ-丁內酯、3-甲氧基-N,N-二甲基丙醯胺、3-乙氧基-N,N-二甲基丙醯胺、3-丁氧基-N,N-二甲基丙醯胺、1,3-二甲基-咪唑啉酮、乙基戊基酮、甲基壬基酮、甲基乙基酮、甲基異戊基酮、甲基異丙基酮、環己酮、碳酸乙烯酯、碳酸丙烯酯、二乙二醇二甲醚、4-羥基-4-甲基-2-戊酮、2-丁氧基乙醇、丙二醇單甲基醚乙酸酯等。此等可單獨使用亦混合後 使用。 The solvent contained in the structure for forming a structure is an organic solvent capable of dissolving a polymer component such as a first polymer, a first polymer precursor, a second polymer or a second polymer precursor, that is, Specially limited. Specific examples thereof include N,N-dimethylformamide, N,N-dimethylacetamide, N-methyl-2-pyrrolidone, N-methylcaprolactam, and 2 - pyrrolidone, N-ethylpyrrolidone, N-vinylpyrrolidone, dimethyl hydrazine, tetramethyl urea, pyridine, dimethyl hydrazine, hexamethylene fluorene, γ-butyrolactone, 3- Methoxy-N,N-dimethylpropanamide, 3-ethoxy-N,N-dimethylpropanamide, 3-butoxy-N,N-dimethylpropanamide, 1 ,3-dimethyl-imidazolidinone, ethyl amyl ketone, methyl decyl ketone, methyl ethyl ketone, methyl isoamyl ketone, methyl isopropyl ketone, cyclohexanone, ethylene carbonate , propylene carbonate, diethylene glycol dimethyl ether, 4-hydroxy-4-methyl-2-pentanone, 2-butoxyethanol, propylene glycol monomethyl ether acetate, and the like. These can be used separately and mixed use.
構造物形成用組成物中,為了提高構造物之物理性強度,可含有交聯劑。交聯劑可舉出如具有被烷氧基烷基化之胺基之化合物、多官能(甲基)丙烯酸酯化合物、環氧基或環氧丙烷化合物、羥基甲基取代酚化合物、含有封端化異氰酸根之化合物等。此等交聯劑可單獨使用或將二種以上組合使用。 The structure for forming a structure may contain a crosslinking agent in order to increase the physical strength of the structure. The crosslinking agent may, for example, be a compound having an amine group alkylated with an alkoxy group, a polyfunctional (meth) acrylate compound, an epoxy group or a propylene oxide compound, a hydroxymethyl-substituted phenol compound, and a capping group. Compounds of isocyanate and the like. These crosslinking agents may be used singly or in combination of two or more.
作為具有被烷氧基烷基化之胺基之化合物,例如可舉出,(聚)羥甲基化三聚氰胺、(聚)羥甲基化乙炔脲、(聚)羥甲基化苯胍胺、(聚)羥甲基化脲等之於一分子內具有複數個活性羥甲基之含氮化合物且其羥甲基之羥基之氫原子之至少一個被甲基、丁基等之烷基所取代之化合物。 Examples of the compound having an amine group alkylated with an alkoxy group include (poly)methylolated melamine, (poly)methylolated acetylene urea, and (poly)methylolated benzoguanamine. (poly)methylolated urea or the like having at least one hydrogen atom of a plurality of active methylol groups in one molecule and having at least one hydrogen atom of a hydroxyl group of a methylol group substituted with an alkyl group such as a methyl group or a butyl group Compound.
具有被烷氧基烷基化之胺基之化合物係有混合複數之取代化合物而成之混合物之情況,亦存有包含一部分自我縮合而成之寡聚物成分之混合物,且亦可使用此般混合物。更具體而言,例如可舉出,六甲氧基甲基三聚氰胺(日本Cytec Industries(股)製、CYMEL(註冊商標)303)、四丁氧基甲基乙炔脲(日本Cytec Industries(股)製、CYMEL(註冊商標)1170)、四甲氧基甲基苯胍胺(日本Cytec Industries(股)製、CYMEL(註冊商標)1123)等之CYMEL系列之商品、甲基化三聚氰胺樹脂((股)三和化學製、NIKALAC(註冊商標)MW-30HM、同MW-390、同MW-100LM、同MX-750LM)、 甲基化脲樹脂((股)三和化學製、NIKALAC(註冊商標)MX-270、同MX-280、同MX-290)等之NIKALAC系列之商品。 A compound having an amine group alkylated with an alkoxy group is a mixture of a plurality of substituted compounds, and a mixture containing a part of self-condensed oligomer components may be used. mixture. More specifically, hexamethoxymethyl melamine (made by Cytec Industries Co., Ltd., CYMEL (registered trademark) 303), tetrabutoxymethyl acetylene urea (made by Cytec Industries, Japan), CYMEL (registered trademark) 1170), tetramethoxymethyl benzoguanamine (made by Cytec Industries Co., Ltd., CYMEL (registered trademark) 1123), etc., CYMEL series of products, methylated melamine resin ((share) three And chemical system, NIKALAC (registered trademark) MW-30HM, same MW-390, same MW-100LM, same MX-750LM), A product of the NIKALAC series of methylated urea resin ((3) and Chemical, NIKALAC (registered trademark) MX-270, MX-280, and MX-290).
多官能(甲基)丙烯酸酯化合物係例如可舉出,三羥甲基丙烷三(甲基)丙烯酸酯、貳三羥甲基丙烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、丙三醇三(甲基)丙烯酸酯、參(2-羥基乙基)異氰脲酸酯三(甲基)丙烯酸酯、乙二醇二(甲基)丙烯酸酯、1,3-丁二醇二(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、二乙二醇二(甲基)丙烯酸酯、三乙二醇二(甲基)丙烯酸酯、丙二醇二(甲基)丙烯酸酯、雙(2-羥基乙基)異氰脲酸酯二(甲基)丙烯酸酯等。更具體而言,例如可舉出NK酯701A、同A-DCP、同A-DON-N、同A-HD-N、同A-NOD-N、同DCP、同DOD-N、同HD-N、同NOD-N、同NPG、同A-TMM-3、同A-TMM-3L、同A-TMM-3LMN、同A-TMPT、同TMPT、同A-TMMT、同AD-TMP、同A-DPH、同A-9550、同A-9530、同ADP-51EH、同ATM-31EH、UA-7100(以上,新中村化學工業股份有限公司製)、KAYARAD(註冊商標)T-1420、同D-330、同D-320、同D-310、同DPCA-20、同DPCA-30、同DPCA-60、同DPCA-120、同TMPTA、同PET- 30、同DPHA、同DPHA-2C(以上,日本化藥股份有限公司製)、UA-306H、UA-306T、UA-306I、UA-510H(以上,共榮社化學股份有限公司製)等。 Examples of the polyfunctional (meth) acrylate compound include trimethylolpropane tri(meth) acrylate, trimethylolpropane tetra(meth) acrylate, and pentaerythritol tri(meth) acrylate. , pentaerythritol tetra (meth) acrylate, dipentaerythritol penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, glycerol tri (meth) acrylate, ginseng (2-hydroxyethyl) Cyanurate tri(meth)acrylate, ethylene glycol di(meth)acrylate, 1,3-butanediol di(meth)acrylate, 1,4-butanediol di(methyl) Acrylate, 1,6-hexanediol di(meth)acrylate, neopentyl glycol di(meth)acrylate, diethylene glycol di(meth)acrylate, triethylene glycol di(methyl) Acrylate, propylene glycol di(meth)acrylate, bis(2-hydroxyethyl)isocyanurate di(meth)acrylate, and the like. More specifically, for example, NK ester 701A, the same A-DCP, the same A-DON-N, the same A-HD-N, the same A-NOD-N, the same DCP, the same DOD-N, the same HD- N, same as NOD-N, same NPG, same A-TMM-3, same A-TMM-3L, same A-TMM-3LMN, same A-TMPT, same TMPT, same A-TMMT, same AD-TMP, same A-DPH, the same as A-9550, the same A-9530, the same ADP-51EH, the same ATM-31EH, UA-7100 (above, manufactured by Shin-Nakamura Chemical Co., Ltd.), KAYARAD (registered trademark) T-1420, the same D-330, the same D-320, the same D-310, the same DPCA-20, the same DPCA-30, the same DPCA-60, the same DPCA-120, the same TMPTA, the same PET- 30. Same as DPHA, DPHA-2C (above, manufactured by Nippon Kayaku Co., Ltd.), UA-306H, UA-306T, UA-306I, UA-510H (above, Kyoeisha Chemical Co., Ltd.).
環氧基或環氧丙烷化合物係例如可舉出,1,4-丁二醇二環氧丙基醚、1,2-環氧基-4-(環氧基乙基)環己烷、丙三醇三環氧丙基醚、二乙二醇二環氧丙基醚、2,6-二環氧丙基苯基環氧丙基醚、1,1,3-參〔p-(2,3-環氧基丙氧基)苯基〕丙烷、1,2-環己烷二羧酸二環氧丙基酯、4,4’-亞甲基雙(N,N-二環氧丙基苯胺)、3,4-環氧基環己基甲基-3,4-環氧基環己烷羧酸酯、三羥甲基乙烷三環氧丙基醚、雙酚-A-二環氧丙基醚、季戊四醇聚環氧丙基醚等。更具體而言,例如可舉出YH-434、YH434L(東都化成(股)製)、具有環氧環己烷構造之環氧樹脂之Epolide GT-401、同GT-403、同GT-301、同GT-302、Ceroxide 2021、Ceroxide 3000(戴爾化學工業(股)製),雙酚A型環氧樹脂之Epikote(現、jER)1001、同1002、同1003、同1004、同1007、同1009、同1010、同828(以上,日本環氧樹脂(股)製),雙酚F型環氧樹脂之Epikote(現、jER)807(日本環氧樹脂(股)製),苯酚酚醛型環氧樹脂之Epikote(現、jER)152、同154(以上,日本環氧樹脂(股)製)、EPPN201、同202(以上,日本化藥(股)製),甲酚酚醛型環氧樹脂之EOCN-102、EOCN-103S、EOCN-104S、EOCN-1020、EOCN-1025、EOCN-1027(以上,日本化藥(股)製)、 Epikote(現、jER)180S75(日本環氧樹脂(股)製),脂環式環氧樹脂之Denacol EX-252(Nagase ChemteX(股)製)、CY175、CY177、CY179(以上,CIBA-GEIGY A.G製)、Araldite CY-182、同CY-192、同CY-184(以上,CIBA-GEIGY A.G製)、Epiclon 200、同400(以上,大日本油墨工業(股)製)、Epikote(現、jER)871、同872(以上,日本環氧樹脂(股)製)、ED-5661、ED-5662(以上,Celanese Coating(股)製),脂肪族聚環氧丙基醚之Denacol EX-611、同EX-612、同EX-614、同EX-622、同EX-411、同EX-512、同EX-522、同EX-421、同EX-313、同EX-314、同EX-321(Nagase ChemteX(股)製)等。 Examples of the epoxy group or the propylene oxide compound include 1,4-butanediol diepoxypropyl ether, 1,2-epoxy-4-(epoxyethyl)cyclohexane, and C. Triol triepoxypropyl ether, diethylene glycol diepoxypropyl ether, 2,6-diepoxypropyl phenylepoxypropyl ether, 1,1,3-parade [p-(2, 3-epoxypropoxy)phenyl]propane, 1,2-cyclohexanedicarboxylic acid diepoxypropyl ester, 4,4'-methylenebis(N,N-diepoxypropyl Aniline), 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexanecarboxylate, trimethylolethane triepoxypropyl ether, bisphenol-A-diepoxy Propyl ether, pentaerythritol polyepoxypropyl ether, and the like. More specifically, for example, YH-434, YH434L (manufactured by Tohto Kasei Co., Ltd.), Epolide GT-401 having an epoxycyclohexane structure, GT-403, and GT-301, Same as GT-302, Ceroxide 2021, Ceroxide 3000 (manufactured by Dell Chemical Industry Co., Ltd.), Epikote (now, jER) 1001 of bisphenol A type epoxy resin, same as 1002, same 1003, same 1004, same 1007, same 1009 , with the same 1010, the same as 828 (above, Japanese epoxy resin (stock)), bisphenol F-type epoxy resin Epikote (now, jER) 807 (made by Japan Epoxy Resin Co., Ltd.), phenol novolac type epoxy Epikote (now, jER) 152 of resin, 154 (above, manufactured by Nippon Epoxy Resin Co., Ltd.), EPPN201, 202 (above, manufactured by Nippon Kayaku Co., Ltd.), EOCN of cresol novolac type epoxy resin -102, EOCN-103S, EOCN-104S, EOCN-1020, EOCN-1025, EOCN-1027 (above, Nippon Kayaku Co., Ltd.), Epikote (now, jER) 180S75 (made by Nippon Epoxy Resin Co., Ltd.), Denacol EX-252 (made by Nagase ChemteX Co., Ltd.), CY175, CY177, CY179 (above, CIBA-GEIGY AG) System), Araldite CY-182, CY-192, CY-184 (above, CIBA-GEIGY AG), Epiclon 200, 400 (above, Dainippon Ink Industry Co., Ltd.), Epikote (now, jER) 871, the same as 872 (above, manufactured by Nippon Epoxy Co., Ltd.), ED-5661, ED-5662 (above, manufactured by Celanese Coating), Denacol EX-611 of aliphatic polyepoxypropyl ether, Same as EX-612, same EX-614, same EX-622, same EX-411, same EX-512, same EX-522, same EX-421, same EX-313, same EX-314, same EX-321 ( Nagase ChemteX (share) system, etc.
羥基甲基取代酚化合物係例如可舉出2-羥基甲基-4,6-二甲基酚、1,3,5-三羥基甲基苯、3,5-二羥基甲基-4-甲氧基甲苯〔2,6-雙(羥基甲基)-p-甲酚〕等。 Examples of the hydroxymethyl-substituted phenol compound include 2-hydroxymethyl-4,6-dimethylphenol, 1,3,5-trihydroxymethylbenzene, and 3,5-dihydroxymethyl-4-methyl. Oxytoluene [2,6-bis(hydroxymethyl)-p-cresol] and the like.
含有封端化異氰酸根之化合物係為異氰酸酯基(-N=C=O)藉由適當保護基而被封端之化合物。封端劑係例如可舉出甲醇、乙醇、異丙醇、n-丁醇、2-乙氧基己醇、2-N,N-二甲基胺基乙醇、2-乙氧基乙醇、環己醇等之醇類、酚、o-硝基酚、p-氯酚、o-甲酚、m-甲酚、P-甲酚等之酚類、ε-己內醯胺等之內醯胺類、丙酮肟、甲基乙基酮肟、甲基異丁基酮肟、環己酮肟、苯乙酮肟、二苯甲酮肟等之肟類、吡唑、3,5-二甲基吡唑、3-甲基吡唑等之吡唑類、十二烷硫醇、苯硫醇等之硫醇類。更具體而 言,例如可舉出VESTANAT(註冊商標)T,同HB、同HT、同B、同DS(以上,Evonik(股)製)、Takenate(註冊商標)B-830、B-815N、B-842N、B-870N、B-874N、B-882N、B-7005、B-7030、B-7075、B-5010(以上,三井化學聚胺基甲酸酯(股)製)等。 The compound containing blocked isocyanate is a compound in which an isocyanate group (-N=C=O) is blocked by a suitable protecting group. Examples of the blocking agent include methanol, ethanol, isopropanol, n-butanol, 2-ethoxyhexanol, 2-N,N-dimethylaminoethanol, 2-ethoxyethanol, and a ring. Alcohols such as hexanol, phenol, o-nitrophenol, p-chlorophenol, o-cresol, m-cresol, P-cresol, etc., decylamine such as ε-caprolactam Anthraquinones such as acetone, methyl ethyl ketone oxime, methyl isobutyl ketone oxime, cyclohexanone oxime, acetophenone oxime, benzophenone oxime, pyrazole, 3,5-dimethyl a pyrazole such as pyrazole or 3-methylpyrazole, a mercaptan such as dodecanethiol or benzenethiol. More specific For example, VESTANAT (registered trademark) T, the same as HB, the same HT, the same B, the same DS (above, Evonik), Takenate (registered trademark) B-830, B-815N, B-842N , B-870N, B-874N, B-882N, B-7005, B-7030, B-7075, B-5010 (above, manufactured by Mitsui Chemical Polyurethane Co., Ltd.).
以上之交聯劑之中,由耐熱性或保存安定性之觀點,以含有環氧基或封端異氰酸根之化合物為佳。 Among the above crosslinking agents, a compound containing an epoxy group or a blocked isocyanate is preferred from the viewpoint of heat resistance or storage stability.
構造物形成用組成物為了提升構造物與基材之密著性,而可含有密著促進劑。密著促進劑係例如可舉出,乙烯基三甲氧基矽烷、乙烯基三乙氧基矽烷、2-(3,4-環氧基環己基)乙基三甲氧基矽烷、3-環氧丙氧基丙基甲基二甲氧基矽烷、p-苯乙烯基三甲氧基矽烷、3-甲基丙烯醯氧基丙基甲基二甲氧基矽烷、3-丙烯醯氧基丙基三甲氧基矽烷、N-2-(胺基乙基)-3-胺基丙基甲基二甲氧基矽烷、3-胺基丙基三甲氧基矽烷、3-胺基丙基三乙氧基矽烷、3-脲基丙基三乙氧基矽烷、N-甲基胺基丙基三甲氧基矽烷、N,N-二甲基胺基丙基三甲氧基矽烷、3-2-(咪唑啉-1-基)-丙基三乙氧基矽烷等。 The composition for forming a structure may contain an adhesion promoter in order to improve the adhesion between the structure and the substrate. Examples of the adhesion promoter include vinyl trimethoxy decane, vinyl triethoxy decane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxy decane, and 3-glycol propylene. Oxypropyl propyl dimethoxy decane, p-styryl trimethoxy decane, 3-methyl propylene methoxy propyl methyl dimethoxy decane, 3- propylene methoxy propyl trimethoxy Baseline, N-2-(aminoethyl)-3-aminopropylmethyldimethoxydecane, 3-aminopropyltrimethoxydecane, 3-aminopropyltriethoxydecane , 3-ureidopropyltriethoxydecane, N-methylaminopropyltrimethoxydecane, N,N-dimethylaminopropyltrimethoxydecane, 3-2-(imidazoline- 1-yl)-propyltriethoxydecane, and the like.
又,構造物形成用組成物中可含有界面活性劑。界面活性劑係例如可舉出,聚氧乙烯月桂基醚、聚氧乙烯硬脂醯基醚、聚氧乙烯十六基醚、聚氧乙烯油烯基醚等之聚氧乙烯烷基醚類、聚氧乙烯辛基酚醚、聚氧乙烯壬基酚醚等之聚氧乙烯烷基烯丙基醚類、聚氧乙烯.聚氧丙烯嵌段共聚物類、花楸丹單月桂酸酯、花楸丹單棕櫚酸 酯、花楸丹單硬脂酸酯、花楸丹單油酸酯、花楸丹三油酸酯、花楸丹三硬脂酸酯等之花楸丹脂肪酸酯類、聚氧乙烯花楸丹單月桂酸酯、聚氧乙烯花楸丹單棕櫚酸酯、聚氧乙烯花楸丹單硬脂酸酯、聚氧乙烯花楸丹三油酸酯、聚氧乙烯花楸丹三硬脂酸酯等之聚氧乙烯花楸丹脂肪酸酯類等之非離子系界面活性劑、商品名Eftop EF301、EF303、EF352((股)Tohkem Products製)、商品名Megafac F-553、F-554、F171、F173、R-08、R-30、R-30-N(大日本油墨化學工業(股)製)、Fluorad FC430、FC431(住友3M(股)製)、商品名Asahiguide AG710、Surflon S-382、SC101、SC102、SC103、SC104、SC105、SC106(旭硝子(股)製)等之氟系界面活性劑、及有機矽氧烷聚合物KP341(信越化學工業(股)製)等。此等界面活性劑可單獨使用,亦可將二種以上組合後使用。 Further, the composition for forming a structure may contain a surfactant. Examples of the surfactant include polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene hexadecyl ether, and polyoxyethylene oleyl ether. Polyoxyethylene alkyl allylate ether, polyoxyethylene alkyl phenol ether, polyoxyethylene alkyl allyl ether, polyoxyethylene. Polyoxypropylene block copolymers, saponin monolaurate, saponin monopalmitate Ester, saponin monostearate, saponin monooleate, saponin trioleate, saponin tristearate, etc. Monolaurate, polyoxyethylene calendron monopalmitate, polyoxyethylene calendan monostearate, polyoxyethylene calendron trioleate, polyoxyethylene calendron tristearate Other nonionic surfactants such as polyoxyethylene calendan fatty acid esters, trade names Eftop EF301, EF303, EF352 (manufactured by Tohkem Products), trade names Megaafac F-553, F-554, F171, F173, R-08, R-30, R-30-N (made by Dainippon Ink Chemical Industry Co., Ltd.), Fluorad FC430, FC431 (manufactured by Sumitomo 3M Co., Ltd.), trade name Asahiguide AG710, Surflon S-382, A fluorine-based surfactant such as SC101, SC102, SC103, SC104, SC105, SC106 (made by Asahi Glass Co., Ltd.), and an organic siloxane polymer KP341 (manufactured by Shin-Etsu Chemical Co., Ltd.). These surfactants may be used singly or in combination of two or more.
在使用此般構造物形成用組成物時,藉由經過後段之塗布步驟、待機放置步驟及燒成步驟,產生聚醯亞胺或聚醯亞胺前驅物等之自我組織化,進而於構造物上形成凹凸。具體而言,使用含有聚醯亞胺或聚醯亞胺前驅物,及與該聚醯亞胺或聚醯亞胺前驅物相異之聚合物之構造物形成用組成物時,聚醯亞胺或聚醯亞胺前驅物及相異聚合物之分子因集合等產生自我組織化而形成凹凸。又,使用包含聚醯亞胺或聚醯亞胺前驅物與丙二醇單甲基醚之構造物形成用組成物時,聚醯亞胺或聚醯亞胺前驅物之分子因集合等產生自我組織化而形成凹凸。丙二醇單甲基醚 由於係對(A)成分之聚醯亞胺或聚醯亞胺前驅物之溶解性為極低之貧溶劑,故推測會產生聚醯亞胺或聚醯亞胺前驅物之自我組織化。尚且,雖然詳述於後,但聚醯亞胺或聚醯亞胺前驅物等所成之自我組織化之有無或程度係依存於(A)成分與(B)成分之種類或混合比、固形分濃度、塗布方法、燒成溫度、放置待機時間(放置時間)等之製造條件,故有必須適宜設定會對自我組織化產生影響之此等製造條件。 When the composition for forming a structure is used, the self-organization of the polyimide or the polyimide precursor is generated by the coating step, the standby step, and the baking step in the subsequent stage, and the structure is further formed. Bumps are formed on the upper surface. Specifically, when a composition for forming a structure containing a polyimide or a polyimide precursor and a polymer different from the polyimide or polyimide precursor, a polyimide composition is used. Or the molecules of the polyimine precursor and the dissimilar polymer are self-organized by aggregation or the like to form irregularities. Further, when a composition for forming a structure comprising a polyimine or a polyimide intermediate and a propylene glycol monomethyl ether is used, the molecules of the polyimide or the polyimide precursor are self-organized by aggregation or the like. And the bumps are formed. Propylene glycol monomethyl ether Since the solubility of the polyimine or polyimine precursor of the component (A) is extremely low, it is presumed that self-organization of the polyimide or polyimide precursor is produced. Further, although detailed later, the presence or degree of self-organization of the polyimide or polyimine precursors depends on the type or mixture ratio of the components (A) and (B), and the solid form. Since the production conditions such as the concentration, the coating method, the firing temperature, and the standby time (placement time) are set, it is necessary to appropriately set such manufacturing conditions that affect the self-organization.
將此般構造物形成用組成物塗佈於基材上(塗布步驟)。基材只要係能塗上構造物形成用組成物者即無特別限定,可舉出如銦錫氧化物(ITO)、銦鋅氧化物(IZO)、銦鎵鋅氧化物(IGZO)、玻璃、矽、聚矽氧、氮化矽、鈷、鋁、鋯、鉻、鎳、鋅、鐵、釕及由此等合金等所構成之基板。 This composition for forming a structure is applied onto a substrate (coating step). The substrate is not particularly limited as long as it can be coated with a composition for forming a structure, and examples thereof include indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), and glass. A substrate composed of ruthenium, polyfluorene oxide, tantalum nitride, cobalt, aluminum, zirconium, chromium, nickel, zinc, iron, niobium, and the like.
塗布方法係例如可舉出旋轉塗佈法、狹縫塗佈法、浸塗法、澆塗法、噴墨法、噴霧法、棒塗法、凹版塗佈法、輥塗法、平版印刷法、轉印印刷法、刷毛塗法、刮刀塗佈法、氣刀塗佈法等。其中亦以旋轉塗佈法為佳,例如旋轉塗佈條件設在10~10000rpm之旋轉數、3~60秒鐘即可。 Examples of the coating method include a spin coating method, a slit coating method, a dip coating method, a casting method, an inkjet method, a spray method, a bar coating method, a gravure coating method, a roll coating method, and a lithography method. Transfer printing method, brush coating method, blade coating method, air knife coating method, and the like. Among them, a spin coating method is preferred. For example, the spin coating condition is set to a number of revolutions of 10 to 10,000 rpm, and 3 to 60 seconds.
藉由塗布步驟所形成之塗膜之膜厚係例如可設在5nm~1μm之範圍內,為了使取得之構造物表面上形成之凹凸之凸部之平均高度在0.5nm~500nm,藉由塗布步驟所形成之塗膜之膜厚係以在5nm~500nm之範圍為佳。 The film thickness of the coating film formed by the coating step can be set, for example, in the range of 5 nm to 1 μm, and the average height of the convex portions formed on the surface of the obtained structure is 0.5 nm to 500 nm by coating. The film thickness of the coating film formed in the step is preferably in the range of 5 nm to 500 nm.
塗布步驟之後,待機放置,即,直接放置藉由塗布步驟而在基材上形成之塗膜(待機放置步驟)。待機放置時間(放置時間)例如可適宜選自10秒~72小時之間,但放置時間係直接聯繫實際進行製造之製程之節拍時間(takt time),其越短則製造時間就變得越短而較理想,故以10秒~10分為佳,更佳為10秒~5分。 After the coating step, it is placed in standby, that is, the coating film formed on the substrate by the coating step is directly placed (standby placement step). The standby standing time (placement time) may be suitably selected, for example, from 10 seconds to 72 hours, but the placement time is directly related to the takt time of the manufacturing process actually performed, and the shorter the manufacturing time, the shorter the manufacturing time becomes. It is ideal, so it is better to divide from 10 seconds to 10, and more preferably 10 seconds to 5 minutes.
待機放置步驟之後進行燒成(燒成步驟)。燒成機器並無特別限定,例如可舉出加熱板、烤箱、熱爐。又,實行燒成步驟之環境亦無特別限定,例如在大氣中、氮等之惰性氣體環境中或真空中等下進行燒成即可。其中,為了提高因自我組織化所形成之凹凸之凸部平均高度,以在大氣中進行燒成為佳。 The baking is performed after the standby standing step (sintering step). The firing machine is not particularly limited, and examples thereof include a hot plate, an oven, and a hot furnace. Further, the environment in which the firing step is carried out is not particularly limited, and for example, it may be calcined in an inert gas atmosphere such as the atmosphere or nitrogen or under a vacuum. Among them, in order to increase the average height of the convex portions of the irregularities formed by the self-organization, it is preferable to perform the burning in the atmosphere.
燒成溫度並無特別限定,例如以在可使構造物形成用組成物所含有之溶劑揮發之40℃~250℃下施行為佳。尚且,為了使取得之構造物之形狀穩定,燒成溫度係以70℃~120℃為佳。因此,於於可在較大幅度之溫度下進行燒成,故能作成對應於適用本發明之構造物之裝置種類之設計,且擴大製程邊界,本發明之構造物係例如可適宜使用於光學裝置等。 The firing temperature is not particularly limited, and it is preferably carried out at 40 ° C to 250 ° C at which the solvent contained in the composition for forming a structure can be volatilized. Further, in order to stabilize the shape of the obtained structure, the firing temperature is preferably 70 ° C to 120 ° C. Therefore, since the firing can be performed at a relatively large temperature, it is possible to create a design corresponding to the type of the apparatus to which the structure of the present invention is applied, and to enlarge the process boundary, and the structure of the present invention can be suitably used for, for example, optical. Device, etc.
燒成時間亦無特別限定,例如可設成5~40分之程度。亦可根據目的之醯亞胺化率使其變化。作為具體例,燒成溫度為230℃時,以20分鐘以上為佳。又,燒成步驟亦可依順序施行40℃~120℃程度之低溫燒成與180℃~250℃程度之高溫燒成之兩者。 The firing time is not particularly limited, and may be, for example, 5 to 40 minutes. It can also be changed according to the imidization rate of the target. As a specific example, when the baking temperature is 230 ° C, it is preferably 20 minutes or longer. Further, in the firing step, both low-temperature firing at a temperature of about 40 ° C to 120 ° C and high-temperature firing at a temperature of about 180 ° C to 250 ° C may be sequentially performed.
尚且,上述塗布步驟、待機放置步驟及燒成步驟係可在常溫及常濕之環境下進行。 Further, the coating step, the standby placing step, and the firing step may be carried out in an environment of normal temperature and normal humidity.
因此,藉由將含有上述(A)成分及上述(B)成分之特定成分之構造物形成用組成物塗佈於基材上並放置後,進行燒成之簡單形成方法,而可取得使聚醯亞胺或聚醯亞胺前驅物等自我組織化而於表面具有凹凸之構造物。例如,不經過乾蝕刻步驟、高溫之燒成步驟或高濕環境下之操作等、複雜之操作,即可形成構造物。又,由於步驟數少,製造步驟短,且亦不需要施行複雜操作用之高價設備,故可平價地製造。 Therefore, by applying a composition for forming a structure containing the specific component of the component (A) and the component (B) to a substrate and allowing it to stand, a simple method of forming the composition can be obtained, and the composition can be obtained. A structure in which a ruthenium imine or a polyimide precursor is self-organized to have irregularities on the surface. For example, a structure can be formed without complicated operations such as a dry etching step, a high-temperature firing step, or a high-humidity environment. Further, since the number of steps is small, the manufacturing steps are short, and expensive equipment for complicated operations is not required, it can be manufactured at a low price.
上述形成方法,在與使用聚苯乙烯與聚甲基丙烯酸甲酯之嵌段共聚物之情況相比,可顯著且再現性良好地形成構造物。因此,日數差等受到抑制,而可穩定地製造目的之具有分形圖型之凹凸之構造物。 In the above formation method, the structure can be formed remarkably and reproducibly compared to the case of using a block copolymer of polystyrene and polymethyl methacrylate. Therefore, the difference in the number of days and the like is suppressed, and the structure having the fractal pattern of the uneven shape can be stably manufactured.
並且,本發明之構造物藉由調整構造物形成用組成物、塗布方法、塗布後之放置時間、燒成溫度等,即可控制取得之分形圖型之形狀,例如,可將凸部之平均高度作成所欲之值。 Further, the structure of the present invention can control the shape of the obtained fractal pattern by adjusting the composition for forming a structure, the coating method, the standing time after coating, the firing temperature, and the like, for example, the average of the convex portions can be obtained. Highly made to the desired value.
又,本發明之構造物並非係如光微影或壓印般製造、轉印經規格化之圖型之構造物,而係具有分形表面形狀之構造物,故不易產生光學性干涉條紋。 Further, the structure of the present invention is not a structure which is manufactured by photolithography or embossing, but is a structure having a patterned surface shape, and is a structure having a fractal surface shape, so that optical interference fringes are less likely to occur.
又,本發明之構造物由於包含聚醯亞胺,故兼備聚醯亞胺所具有之高透明性、耐鹼性、耐藥品性、高折射率、乾蝕刻耐性、ITO濺鍍耐性等之化學及物理上之 有用特性,且作為永久膜之信賴性為高。 Moreover, since the structure of the present invention contains polyimine, it has the chemistry of high transparency, alkali resistance, chemical resistance, high refractive index, dry etching resistance, ITO sputtering resistance, etc. of polyimine. Physically Useful properties, and high reliability as a permanent film.
本發明之構造物係可使用作為構成各種電子裝置之構件。可適用之電子裝置並無特別限定,例如可舉出,光學裝置(光學元件)、半導體裝置、太陽能電池、顯示器、記憶媒體、生化晶片等。以下,以光學裝置之有機發光二極體(OLED)為例進行說明。 The structure of the present invention can be used as a member constituting various electronic devices. The electronic device to be applied is not particularly limited, and examples thereof include an optical device (optical device), a semiconductor device, a solar cell, a display, a memory medium, and a biochemical wafer. Hereinafter, an organic light emitting diode (OLED) of an optical device will be described as an example.
圖1為概略展示OLED之概略剖面圖。如圖1(a)所示,OLED為依順序層合透明基板11、透明電極13、電洞輸送層14、發光層15及電極16之構造,本發明中在透明基板11與透明電極13之間設置由本發明之構造物所構成之光取出膜12。 1 is a schematic cross-sectional view showing an OLED in outline. As shown in FIG. 1( a ), the OLED is a structure in which the transparent substrate 11 , the transparent electrode 13 , the hole transport layer 14 , the light emitting layer 15 , and the electrode 16 are sequentially laminated. In the present invention, the transparent substrate 11 and the transparent electrode 13 are The light extraction film 12 composed of the structure of the present invention is disposed between.
光取出膜12係藉由上述形成方法而形成於透明基板11上者,且包含聚醯亞胺,圖1(a)中,透明電極13側之表面具有因自我組織化所形成之凹凸。凹凸之大小係例如凸部之平均高度為0.5nm~50nm。 The light extraction film 12 is formed on the transparent substrate 11 by the above-described formation method, and contains polyimide. In FIG. 1(a), the surface on the side of the transparent electrode 13 has irregularities formed by self-organization. The size of the concavities and convexities is, for example, an average height of the convex portions of 0.5 nm to 50 nm.
除設置由本發明之構造物所構成之光取出膜12之外,其他係與過往之OLED相同,其具體例係例示如以下。 Other than the light extraction film 12 composed of the structure of the present invention, the other systems are the same as the conventional OLED, and specific examples thereof are as follows.
透明基板11係可舉出如玻璃基板、三乙醯基纖維素、聚對酞酸乙二酯、聚甲基丙烯酸甲酯、環烯烴(共)聚合物、聚乙烯醇、聚碳酸酯、聚苯乙烯、聚醯亞胺、聚醯胺、聚烯烴、聚丙烯、聚乙烯、聚萘二甲酸乙二酯、聚醚碸、以及組合聚合物而成之共聚物等之塑質基板等。 Examples of the transparent substrate 11 include a glass substrate, triethyl fluorenyl cellulose, polyethylene terephthalate, polymethyl methacrylate, cycloolefin (co)polymer, polyvinyl alcohol, polycarbonate, and poly. A plastic substrate such as a copolymer of styrene, polyimine, polyamine, polyolefin, polypropylene, polyethylene, polyethylene naphthalate, polyether oxime, or a combination polymer.
透明電極(陽極)13係可舉出如ITO、IZO、IGZO等。 Examples of the transparent electrode (anode) 13 include ITO, IZO, IGZO, and the like.
電極(陰極)16係可舉出如鋁、銦、金、銀等,或此等之合金等。 Examples of the electrode (cathode) 16 include aluminum, indium, gold, silver, and the like, or alloys thereof.
構成發光層15之發光材料係可舉出鋁錯合物等之低分子系發光材料、π共軛聚合物等之高分子系發光材料,或在此等發光材料中添加有作為摻雜劑之有色色素之材料。 The light-emitting material constituting the light-emitting layer 15 may be a low-molecular light-emitting material such as an aluminum complex or a polymer light-emitting material such as a π-conjugated polymer, or a dopant may be added to the light-emitting material. A material for colored pigments.
此般OLED藉由對透明電極13及電極16施加電壓而注入電子與電洞,並在發光層15進行結合。且,藉由此發光層15中之結合能量,發光層15之發光材料受到激發,從激發狀態返回基底狀態時產生光(螢光)。將此光從透明基板11側取出。 The OLED thus injects electrons and holes by applying a voltage to the transparent electrodes 13 and the electrodes 16, and bonds them in the light-emitting layer 15. Further, by the bonding energy in the light-emitting layer 15, the light-emitting material of the light-emitting layer 15 is excited, and light (fluorescence) is generated when returning from the excited state to the substrate state. This light is taken out from the side of the transparent substrate 11.
發光層15所產生之光由於在發光層15、電洞輸送層14、透明電極13、透明基板11之各界面進行反射等,從透明基板11側所取出之光之強度通常大幅降低,但上述OLED中,由於係將本發明之構造物設置作為光取出膜12,故光取出效率非常高。 The light generated by the light-emitting layer 15 is reflected at the respective interfaces of the light-emitting layer 15, the hole transport layer 14, the transparent electrode 13, and the transparent substrate 11, and the intensity of light taken out from the side of the transparent substrate 11 is usually greatly reduced. In the OLED, since the structure of the present invention is provided as the light extraction film 12, the light extraction efficiency is extremely high.
又,ITO等之透明電極13通常係以濺鍍法設置,但本發明之構造物中由於係包含聚醯亞胺者,故為堅固,且濺鍍耐性亦為優良,在濺鍍後仍可充分維持凹凸形狀。尚且,在作成使用聚苯乙烯與聚甲基丙烯酸甲酯之嵌段共聚物之自我組織化膜所構成之光取出膜時,如於其上以濺鍍法設置透明電極13,則凹凸形狀崩潰,且光取出 效率亦大幅減少。又,本發明之構造物因包含聚醯亞胺(折射率約1.65)而折射率較高,故例如可設為透明電極13之ITO(折射率約2.1)與透明基板11之玻璃(折射率約1.4)之間之折射率。 Further, the transparent electrode 13 such as ITO is usually provided by a sputtering method, but the structure of the present invention is strong because it contains a polyimide, and the sputtering resistance is also excellent, and it is still possible after sputtering. Fully maintain the concave and convex shape. Further, when a light extraction film composed of a self-assembled film of a block copolymer of polystyrene and polymethyl methacrylate is used, if the transparent electrode 13 is provided by sputtering, the uneven shape collapses. And light extraction Efficiency has also been greatly reduced. Further, since the structure of the present invention contains a polyimine (refractive index of about 1.65) and has a high refractive index, for example, ITO (refractive index of about 2.1) of the transparent electrode 13 and glass of the transparent substrate 11 (refractive index) can be used. The refractive index between about 1.4).
設置由本發明之構造物所構成之光取出膜12之位置並非限定於透明基板11與透明電極13之間,亦可設置於光取出面之最前面,例如,如圖1(b)所示般,亦可設置於透明基板11之與透明電極13為相反側之面上。光取出膜12係為藉由上述形成方法而形成於透明基板11上者,且包含聚醯亞胺,圖1(b)中,與透明電極13側為相反側之表面上具有因自我組織化所形成之凹凸。凹凸之大小係例如凸部之平均高度為40nm~500nm。關於其他事項係與上述圖1(a)相同,故省略說明。又,設置由本發明之構造物所構成之光取出膜12之位置亦可在透明電極13與電洞輸送層14或發光層15之間。 The position at which the light extraction film 12 composed of the structure of the present invention is provided is not limited to the space between the transparent substrate 11 and the transparent electrode 13, and may be provided at the forefront of the light extraction surface, for example, as shown in Fig. 1(b). It may be provided on the surface of the transparent substrate 11 opposite to the transparent electrode 13. The light extraction film 12 is formed on the transparent substrate 11 by the above-described formation method, and includes polyimide. In FIG. 1(b), the surface on the opposite side to the side of the transparent electrode 13 has self-organization. The unevenness formed. The size of the concavities and convexities is, for example, an average height of the convex portions of 40 nm to 500 nm. The other matters are the same as those of Fig. 1(a) described above, and thus the description thereof is omitted. Further, the position at which the light extraction film 12 composed of the structure of the present invention is provided may be between the transparent electrode 13 and the hole transport layer 14 or the light-emitting layer 15.
以下,舉出實施例及比較例更詳細地說明本發明,但本發明並非係受此等實施例所限定者。尚且,實施例中使用之各測量裝置係如以下所述。又,分子量之測量、醯亞胺化率之測量方法、略稱亦係如以下所示。 Hereinafter, the present invention will be described in more detail by way of examples and comparative examples, but the invention is not limited by the examples. Further, each measuring device used in the examples is as follows. Further, the measurement of the molecular weight and the measurement method of the ruthenium imidization ratio are also shown below.
AFM(原子間力顯微鏡)係使用SII Nanotechnology(股)公司製Nano Navi L-trace進行測量。懸臂係使用SI-DF40(背面AL序號)。在掃描範圍 為5μm×5μm,掃描頻率數1.0Hz下進行測量。 AFM (Atomic Force Microscopy) was measured using a Nano Navi L-trace manufactured by SII Nanotechnology Co., Ltd. The cantilever system uses SI-DF40 (back AL number). In the scanning range The measurement was performed at 5 μm × 5 μm and the scanning frequency was 1.0 Hz.
旋轉塗佈器係使用Brewer Science股份有限公司Cee200X。 The spin coater was used by Brewer Science Co., Ltd. Cee 200X.
膜厚係使用J.A.Woollam JAPAN公司製、多入射角分光橢圓偏光計VASE進行測量。 The film thickness was measured using a multi-incidence angle spectroscopic ellipsometer VASE manufactured by J.A. Woollam JAPAN.
螢光光譜係使用股份有限公司日立高科技公司製分光螢光光度計F-7000。 The fluorescence spectrum system was a spectrophotometer F-7000 manufactured by Hitachi High-Tech Co., Ltd.
聚醯胺酸及聚醯亞胺之分子量係藉由GPC(常溫凝膠滲透層析)裝置測量該聚醯胺酸或聚醯亞胺,以聚乙二醇、聚環氧乙烷換算值算出數平均分子量(Mn)與重量平均分子量(Mw)。 The molecular weight of polyaminic acid and polyimine is measured by a GPC (normal temperature gel permeation chromatography) apparatus, and the polyamine or polyimine is measured in terms of polyethylene glycol and polyethylene oxide. The number average molecular weight (Mn) and the weight average molecular weight (Mw).
GPC裝置:Shodex公司製(GPC-101) GPC device: manufactured by Shodex (GPC-101)
管柱:Shodex公司製(KD803、KD805之直列) Pipe column: made by Shodex company (inline of KD803, KD805)
管柱溫度:50℃ Column temperature: 50 ° C
溶離液:N,N-二甲基甲醯胺(添加劑為溴化鋰-水合物(LiBr.H2O)30毫莫耳/L、磷酸.無水結晶(o-磷酸)30毫莫耳/L、四氫呋喃(THF)10ml/L) Dissolution: N,N-dimethylformamide (additive is lithium bromide-hydrate (LiBr.H 2 O) 30 mM/L, phosphoric acid. Anhydrous crystal (o-phosphoric acid) 30 mmol/L, Tetrahydrofuran (THF) 10ml/L)
流速:1.0ml/分 Flow rate: 1.0ml/min
檢量線製作用標準樣本:東曹公司製TSK標準聚環氧乙烷(分子量約900000、150000、100000、30000)、及、Polymer Laboratories公司製聚乙二醇(分子量約12000、4000、1000)。 Standard sample for the production of calibration lines: TSK standard polyethylene oxide (molecular weight about 900,000, 150,000, 100,000, 30,000) manufactured by Tosoh Corporation, and polyethylene glycol (molecular weight of about 12,000, 4000, 1000) manufactured by Polymer Laboratories .
如以下般施行而測量聚醯亞胺之醯亞胺化率。 The ruthenium imidization ratio of the polyimine was measured as follows.
將聚醯亞胺粉末20mg放入NMR樣本管,添加氘化二甲亞碸(DMSO-d6、0.05%TMS(四甲基矽烷)混合品)0.53ml,使其完全溶解。在日本電子資料公司製NMR測量器(JNM-ECA500)中,測量此溶液之500MHz之質子NMR。醯亞胺化率係使用將源自於醯亞胺化前後皆未變化之構造之質子決定作為基準質子且此質子之波峰累算值,與於9.5ppm~10.0ppm附近顯示之源自醯胺酸之NH基之質子波峰累算值,並藉由下式而求得者。 20 mg of polyimine powder was placed in an NMR sample tube, and 0.53 ml of dimethyl hydrazine hydride (DMSO-d 6 , 0.05% TMS (tetramethyl decane) mixture) was added to completely dissolve it. A proton NMR of 500 MHz of this solution was measured in a NMR measuring instrument (JNM-ECA500) manufactured by Nippon Denshi Co., Ltd. The ruthenium imidization ratio is determined by using a proton derived from a structure which has not changed before and after imidization as a reference proton and a peak accumulating value of the proton, and a guanamine derived from 9.5 ppm to 10.0 ppm. The proton peak accumulating value of the NH group of acid, and is obtained by the following formula.
醯亞胺化率(%)=(1-α.x/y)×100 醯 imidization rate (%) = (1-α.x/y) × 100
上述式中,x為源自醯胺酸之NH基之質子波峰累算值、y為基準質子之波峰累算值、α為基準質子對聚醯胺酸(醯亞胺化率為0%)時之醯胺酸之NH基質子一個之個數比例。 In the above formula, x is the proton peak accumulating value of the NH group derived from proline, y is the peak accumulating value of the reference proton, and α is the reference proton pair polylysine (the imidization ratio is 0%) A ratio of the number of NH protons of the proline.
NBoc3TBS:下述式所表示之二胺
DADPA:下述式所表示之4,4’-二胺基二苯基胺
DDM:下述式所表示之4,4-二胺基二苯基甲烷
PCH7AB:下述式所表示之1,3-二胺基-4-〔4-(反-4-n-庚基環己基)苯氧基〕苯
TDA:3,4-二羧基-1,2,3,4-四氫-1-萘琥珀酸二酐
NMP:N-甲基-2-吡咯啶酮 NMP: N-methyl-2-pyrrolidone
GBL:γ-丁內酯 GBL: γ-butyrolactone
對裝有攪拌裝置及附有氮導入管之200ml四頸燒瓶添加1,3-雙(4-胺基苯氧基)苯14.03g(48.0mmol)、NMP141.3g,輸送氮並同時攪拌使其溶解。攪拌此二胺溶液並同時添加苯均四酸二酐10.05g(46.0mmol),及添加NMP以使其固形分濃度成為12質量%,在23℃之水浴中攪拌20小時而取得聚醯胺酸之溶液(略記為P1)。又,此聚醯胺酸之分子量為Mn=15466、Mw=41241。以NMP稀釋P1而調製成固形分濃度為6質量%及1質量%之清漆。 To a 200 ml four-necked flask equipped with a stirring device and a nitrogen introduction tube, 14.03 g (48.0 mmol) of 1,3-bis(4-aminophenoxy)benzene and 141.3 g of NMP were added, and nitrogen was supplied and stirred at the same time. Dissolved. The diamine solution was stirred and 10.05 g (46.0 mmol) of pyromellitic dianhydride was added thereto, and NMP was added to have a solid content concentration of 12% by mass, and stirred in a water bath at 23 ° C for 20 hours to obtain polyglycine. Solution (abbreviated as P1). Further, the molecular weight of the polyamic acid was Mn = 15466 and Mw = 41,241. The varnish having a solid content concentration of 6 mass% and 1 mass% was prepared by diluting P1 with NMP.
對裝有攪拌裝置及附有氮導入管之100ml四頸燒瓶添加4,4’-二胺基二苯基甲烷4.02g(20.3mmol)、1,3-雙(4-胺基苯乙基)脲2.60g(8.7mmol)、NMP 70.8g, 輸送氮並同時攪拌使其溶解。攪拌此二胺溶液並同時添加1,2,3,4-環丁烷四羧酸二酐5.61g(28.5mmol)、及添加NMP以使其固形分濃度成為12質量%,在23℃之水浴中攪拌5小時而取得聚醯胺酸之溶液(略記為P2)。又,此聚醯胺酸之分子量為Mn=10120、Mw=22465。以NMP稀釋P2而調製成固形分濃度為6質量%及1質量%之清漆。 Add 4,4'-diaminodiphenylmethane 4.02g (20.3mmol), 1,3-bis(4-aminophenethyl) to a 100ml four-necked flask equipped with a stirring device and a nitrogen inlet tube. 2.60 g (8.7 mmol) of urea and 70.8 g of NMP. The nitrogen is delivered while stirring to dissolve it. The diamine solution was stirred while adding 5.61 g (28.5 mmol) of 1,2,3,4-cyclobutanetetracarboxylic dianhydride, and NMP was added to have a solid content concentration of 12% by mass in a water bath at 23 ° C. The mixture was stirred for 5 hours to obtain a solution of polylysine (abbreviated as P2). Further, the molecular weight of the polyamic acid was Mn = 10,120 and Mw = 22,465. The varnish having a solid content concentration of 6 mass% and 1 mass% was prepared by diluting P2 with NMP.
對裝有攪拌裝置及附有氮導入管之100ml四頸燒瓶添加4,4’-二胺基二苯基甲烷4.59g(23.1mmol)、p-苯二胺1.07g(9.9mmol)、NMP 70.6g,輸送氮並同時攪拌使其溶解。攪拌此二胺溶液並同時添加1,2,3,4-環丁烷四羧酸二酐6.36g(32.4mmol)、及添加NMP以使其固形分濃度成為12質量%,在23℃之水浴中攪拌5小時而取得聚醯胺酸之溶液(略記為P3)。又,此聚醯胺酸之分子量為Mn=13899、Mw=30991。以NMP稀釋P3而調製成固形分濃度為6質量%之清漆。 4,4'-diaminodiphenylmethane 4.59 g (23.1 mmol), p-phenylenediamine 1.07 g (9.9 mmol), NMP 70.6 were placed in a 100 ml four-necked flask equipped with a stirring device and a nitrogen introduction tube. g, transporting nitrogen while stirring to dissolve it. The diamine solution was stirred while adding 6.26 g (32.4 mmol) of 1,2,3,4-cyclobutanetetracarboxylic dianhydride, and NMP was added to have a solid concentration of 12% by mass in a water bath at 23 ° C. The mixture was stirred for 5 hours to obtain a solution of polylysine (abbreviated as P3). Further, the molecular weight of the polyamic acid was Mn = 13899 and Mw = 30,991. The varnish having a solid content concentration of 6 mass% was prepared by diluting P3 with NMP.
對裝有攪拌裝置及附有氮導入管之50ml四頸燒瓶添加4,4’-二胺基二苯基甲烷2.66g(13.4mmol)、4,4’-二胺基苯甲醯苯胺1.31g(5.8mmol)、NMP 34.1g,輸送氮並同時攪拌使其溶解。攪拌此二胺溶液並同時添加 1,2,3,4-環丁烷四羧酸二酐3.54g(1.8mmol)、及添加NMP以使其固形分濃度成為12質量%,在23℃之水浴中攪拌5小時而取得聚醯胺酸之溶液(略記為P4)。又,此聚醯胺酸之分子量為Mn=12254、Mw=27234。以NMP稀釋P4而調製成固形分濃度為6質量%之清漆。 4,4'-diaminodiphenylmethane 2.66 g (13.4 mmol) and 4,4'-diaminobenzilide aniline 1.31 g were placed in a 50 ml four-necked flask equipped with a stirring device and a nitrogen introduction tube. (5.8 mmol), NMP 34.1 g, nitrogen was supplied while stirring to dissolve. Stir this diamine solution and add at the same time 3.54 g (1.8 mmol) of 1,2,3,4-cyclobutanetetracarboxylic dianhydride, and addition of NMP so that the solid content concentration thereof was 12% by mass, and the mixture was stirred for 5 hours in a water bath of 23 ° C to obtain a polyfluorene. A solution of the amine acid (abbreviated as P4). Further, the molecular weight of the polyamic acid was Mn = 12,254 and Mw = 27,234. The varnish having a solid content concentration of 6 mass% was prepared by diluting P4 with NMP.
將裝有攪拌裝置之300mL四頸燒瓶作成氮環境並放入p-苯二胺2.81g(26.0mmol)、NBoc3TBS 1.10g(2.89mmol),添加NMP 51.99g、GBL 155.97g、作為鹼之吡啶5.16g(65.18mmol),攪拌使其溶解。其次,攪伴此二胺溶液並同時添加二甲基1,3-雙(氯羰基)環丁烷-2,4-二羧酸酯8.83g(27.2mmol),在水冷下反應4小時。4小時後,加入丙烯醯氯0.75g(8.3mmol),在水冷下使其反應30分鐘。將取得之聚醯胺酸酯溶液投入並同時攪拌於905g之2-丙醇中,過濾取出析出之沉澱物,其後,以448g之2-丙醇洗淨5次,且乾燥而取得聚醯胺酸酯之粉末。此聚醯胺酸酯之分子量為Mn=15623、Mw=30510。聚醯胺酸酯粉末係以GBL稀釋而調製成固形分濃度為10質量%、6質量%及1質量%之清漆(略記為P5)。 A 300 mL four-necked flask equipped with a stirring apparatus was placed in a nitrogen atmosphere, and 2.81 g (26.0 mmol) of p-phenylenediamine, 1.10 g (2.89 mmol) of NBoc3TBS, 51.99 g of NMP, 155.97 g of GBL, and pyridine 5.16 as a base were added. g (65.18 mmol) was stirred to dissolve. Next, the diamine solution was stirred and 8.83 g (27.2 mmol) of dimethyl1,3-bis(chlorocarbonyl)cyclobutane-2,4-dicarboxylate was added thereto, and the mixture was reacted for 4 hours under water cooling. After 4 hours, 0.75 g (8.3 mmol) of acrylonitrile chloride was added, and the mixture was reacted for 30 minutes under water cooling. The obtained polyamidate solution was placed and stirred in 905 g of 2-propanol, and the precipitate was precipitated by filtration, and then washed with 448 g of 2-propanol for 5 times, and dried to obtain a polyfluorene. Amine acid powder. The molecular weight of this polyphthalate was Mn = 15623 and Mw = 30510. The polyphthalate powder was diluted with GBL to prepare a varnish having a solid content concentration of 10% by mass, 6% by mass, and 1% by mass (abbreviated as P5).
裝有攪拌裝置及附有氮導入管之100ml四頸燒瓶添加 DADPA 3.99g(20.0mmol)、DDM 0.99g(5.0mmol)、NMP 72.4g,輸送氮並同時攪拌使其溶解。攪拌此二胺溶液並同時添加1,2,3,4-環丁烷四羧酸二酐3.57g(18.3mmol),在23℃之水浴中攪拌2小時後,添加TDA 1.50g(5.0mmol)、NMP 13.58g,在23℃之水浴中攪拌3小時而取得固形分濃度為10.5質量%之聚醯胺酸之溶液(略記為P6)。又,聚醯胺酸之分子量為Mn=14375、Mw=34127。P6係以NMP稀釋而調製成固形分濃度為10質量%、6質量%及1質量%之清漆。 100ml four-necked flask with a stirring device and a nitrogen inlet tube DADPA 3.99 g (20.0 mmol), DDM 0.99 g (5.0 mmol), and NMP 72.4 g were transported with nitrogen while stirring to dissolve. The diamine solution was stirred while 3.57 g (18.3 mmol) of 1,2,3,4-cyclobutanetetracarboxylic dianhydride was added, and after stirring for 2 hours in a water bath of 23 ° C, TDA 1.50 g (5.0 mmol) was added. N58.58 g of NMP was stirred in a water bath of 23 ° C for 3 hours to obtain a solution of polyamic acid having a solid content of 10.5% by mass (abbreviated as P6). Further, the molecular weight of the polyproline was Mn = 14375 and Mw = 34,127. P6 was diluted with NMP to prepare a varnish having a solid content concentration of 10% by mass, 6% by mass, and 1% by mass.
對裝有攪拌裝置及附有氮導入管之2000ml可拆式燒瓶添加p-苯二胺48.67g(0.45mol)、4-(十八基氧基)-1,3-苯二胺18.83g(0.05mol)、NMP 1233g,輸送氮並同時攪拌使其溶解。攪拌此二胺溶液並同時添加TDA 150.14g(0.5mmol)、及NMP,在50℃下攪拌24小時而取得聚醯胺酸之溶液。將此聚醯胺酸溶液稀釋成5質量%,再添加醯亞胺化觸媒之吡啶237.9g、無水乙酸510.6g,在40℃下使其反應3小時。將此溶液投入於17.4L之甲醇中,過濾分離取得之沉澱物並乾燥而取得白色之聚醯亞胺粉末。取得之聚醯亞胺為Mn=9273、Mw=18815。又醯亞胺化率為84%。使聚醯亞胺粉末溶解於NMP而調製成固形分濃度為6質量%之清漆(略記為P7)。 48.67 g (0.45 mol) of p-phenylenediamine and 18.83 g of 4-(octadecyloxy)-1,3-phenylenediamine were added to a 2000 ml separable flask equipped with a stirring device and a nitrogen introduction tube. 0.05 mol), NMP 1233 g, and nitrogen was supplied while stirring to dissolve. The diamine solution was stirred while adding 150.14 g (0.5 mmol) of TDA and NMP, and the mixture was stirred at 50 ° C for 24 hours to obtain a solution of poly-proline. The polyaminic acid solution was diluted to 5 mass%, and 237.9 g of pyridine of ruthenium catalyzed catalyst and 510.6 g of anhydrous acetic acid were further added thereto, and the mixture was reacted at 40 ° C for 3 hours. This solution was poured into 17.4 L of methanol, and the obtained precipitate was separated by filtration and dried to obtain a white polyimine powder. The obtained polyamidiamine was Mn=9273 and Mw=18815. The yield of hydrazine was 84%. The polyimine powder was dissolved in NMP to prepare a varnish having a solid content concentration of 6 mass% (abbreviated as P7).
對裝有攪拌裝置及附有氮導入管之2000ml可拆式燒瓶添加4,4’-二胺基二苯基甲烷198.27g(1.0mol)、NMP與GBL之混合溶劑(NMP:GBL=25.3:74.7(體積比))1111g,輸送氮並同時攪拌使其溶解。攪拌此二胺溶液並同時添加1,2,3,4-環丁烷四羧酸二酐98.05g(0.5mol)、苯均四酸二酐98.98g(0.44mol),在室溫下反應5小時而取得聚醯胺酸之溶液(略記為P8)。聚醯胺酸為Mn=11067、Mw=26270。以NMP稀釋P8而調製成固形分濃度為6質量%之清漆。 A mixed solvent of 4,4'-diaminodiphenylmethane 198.27 g (1.0 mol) and NMP and GBL was added to a 2000 ml separable flask equipped with a stirring device and a nitrogen introduction tube (NMP: GBL = 25.3: 74.7 (volume ratio) of 1111 g, nitrogen was supplied while stirring to dissolve. The diamine solution was stirred while 98.05 g (0.5 mol) of 1,2,3,4-cyclobutanetetracarboxylic dianhydride and 98.98 g (0.44 mol) of pyromellitic dianhydride were added, and the reaction was carried out at room temperature. A solution of polylysine was obtained in an hour (abbreviated as P8). The polyglycolic acid was Mn=11067 and Mw=26270. The varnish having a solid content concentration of 6 mass% was prepared by diluting P8 with NMP.
在NMP(34.05g)中混合聯環〔3,3,0〕辛烷-2,4,6,8-四羧酸二酐(2.50g、10.00mmol)、3,5-二胺基安息香酸(1.07g、7.03mmol)、PCH7AB(4.95g、13.01mmol),在80℃下使其反應1小時後,添加1,2,3,4-環丁烷四羧酸二酐(1.93g、9.84mmol)與NMP(7.73g),在40℃下使其反應6小時而取得固形分濃度為20質量%之聚醯胺酸之溶液(略記為P9)。聚醯胺酸之Mn=13400、Mw=58000。以NMP稀釋P9而調製成固形分濃度為6質量%之清漆。 Mixing cyclo[3,3,0]octane-2,4,6,8-tetracarboxylic dianhydride (2.50 g, 10.00 mmol), 3,5-diaminobenzoic acid in NMP (34.05 g) (1.07 g, 7.03 mmol), PCH7AB (4.95 g, 13.01 mmol), and reacted at 80 ° C for 1 hour, then 1,2,3,4-cyclobutanetetracarboxylic dianhydride (1.93 g, 9.84) was added. Methyl) was reacted with NMP (7.73 g) at 40 ° C for 6 hours to obtain a solution of polyamic acid having a solid content concentration of 20% by mass (abbreviated as P9). The polyamine acid had Mn = 13400 and Mw = 58,000. The varnish having a solid content concentration of 6 mass% was prepared by diluting P9 with NMP.
NMP(38.14g)中混合聯環〔3,3,0〕辛烷-2,4,6,8-四羧酸二酐(3.94g、15.75mmol)、3,5-二胺基安息香酸(1.60g、10.52mmol)、PCHAB7(4.00g、10.51mmol),在80℃下使其反應1小時後,添加1,2,3,4-環丁烷四羧酸二酐(1.01g、5.15mmol)與NMP(4.04g),在40℃下使其反應6小時而取得聚醯胺酸溶液。 NMP (38.14g) mixed with cyclo[3,3,0]octane-2,4,6,8-tetracarboxylic dianhydride (3.94g, 15.75mmol), 3,5-diaminobenzoic acid ( 1.60 g, 10.52 mmol), PCHAB7 (4.00 g, 10.51 mmol), after reacting at 80 ° C for 1 hour, 1,2,3,4-cyclobutanetetracarboxylic dianhydride (1.01 g, 5.15 mmol) was added. The reaction was carried out with NMP (4.04 g) at 40 ° C for 6 hours to obtain a polyaminic acid solution.
對此聚醯胺酸溶液(20.0g)添加NMP而將固形分濃度稀釋成6質量%後,添加醯亞胺化觸媒之無水乙酸(4.17g)、吡啶(1.29g),在50℃下使其反應2小時。將此反應溶液投入於甲醇(250ml)中,過濾分離取得之沉澱物。以甲醇洗淨此沉澱物,在100℃下減壓乾燥而取得聚醯亞胺粉末。此聚醯亞胺之醯亞胺化率為49%,Mn=17200、Mw=63000。使聚醯亞胺粉末溶解於NMP,而調製成固形分濃度為6質量%之清漆(略記為P10)。 After adding NMP to the polyamic acid solution (20.0 g) and diluting the solid content concentration to 6 mass%, anhydrous acetic acid (4.17 g) and pyridine (1.29 g) of a ruthenium catalyst were added at 50 ° C. It was allowed to react for 2 hours. This reaction solution was poured into methanol (250 ml), and the obtained precipitate was separated by filtration. This precipitate was washed with methanol, and dried under reduced pressure at 100 ° C to obtain a polyimide pigment. The polyimide imidization ratio of this polyimine was 49%, Mn was 17,200, and Mw was 63,000. The polyimine powder was dissolved in NMP to prepare a varnish having a solid content concentration of 6 mass% (abbreviated as P10).
製膜及燒成步驟皆係在室溫23℃、相對濕度為55%RH之等級1000之無塵室中進行。 The film forming and firing steps were carried out in a clean room at a temperature of 23 ° C and a relative humidity of 55% RH of class 1000.
對20mL之單頸梨型燒瓶添加合成例1中取得之5.0g之P1(6質量%)與合成例2中取得之5.0g之P2(6質量%),使用磁攪拌器進行攪拌而取得均勻之清漆(構造物 形成用組成物)。以旋轉塗佈將此清漆塗佈在於表面層合有3cm×4cm且厚度為150nm之ITO之厚度1.1mm之玻璃(以下,亦記載為玻璃基材)之玻璃面(即,與形成有ITO之面為相反側之面)而形成塗膜。旋轉塗佈結束後,放置10秒鐘,其次在80℃之加熱板上燒成5分鐘後,在230℃之加熱板上燒成30分鐘,而得到膜厚100nm之膜(構造物)。 5.0 g of P1 (6 mass%) obtained in Synthesis Example 1 and 5.0 g of P2 (6 mass%) obtained in Synthesis Example 2 were added to a 20 mL single neck pear type flask, and the mixture was stirred using a magnetic stirrer to obtain uniformity. Varnish Forming composition). The varnish was applied by spin coating to a glass surface (hereinafter, also referred to as a glass substrate) having a thickness of 1.1 mm of ITO having a thickness of 3 cm × 4 cm and a thickness of 150 nm (that is, with ITO formed). The surface is the opposite side to form a coating film. After completion of the spin coating, the film was allowed to stand for 10 seconds, and then fired on a hot plate at 80 ° C for 5 minutes, and then fired on a hot plate at 230 ° C for 30 minutes to obtain a film (structure) having a film thickness of 100 nm.
除取代合成例2中取得之5.0g之P2(6質量%)而改用合成例3中取得之5.0g之P3(6質量%)以外,其他進行與實施例1同樣之操作,而取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 The same operation as in Example 1 was carried out except that 5.0 g of P2 (6 mass%) obtained in Synthesis Example 2 was used instead of 5.0 g of P3 (6 mass%) obtained in Synthesis Example 3, and uniformity was obtained. A varnish was obtained, and a film having a film thickness of 100 nm was obtained on a glass substrate.
除取代合成例2中取得之5.0g之P2(6質量%)而改用合成例4中取得之5.0g之P4(6質量%)以外,其他進行實施例1同樣之操作,而取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 The same operation as in Example 1 was carried out except that 5.0 g of P2 (6 mass%) obtained in Synthesis Example 2 was used instead of 5.0 g of P4 (6 mass%) obtained in Synthesis Example 4, and uniformity was obtained. A varnish was obtained, and a film having a film thickness of 100 nm was obtained on a glass substrate.
除取代合成例1中取得之5.0g之P1(6質量%)與合成例2中取得之5.0g之P2(6質量%)而改用合成例7中取得之5.0g之P7(6質量%)與合成例8中取得之5.0g 之P8(6質量%)以外,其他進行與實施例1同樣之操作,取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 In place of 5.0 g of P1 (6 mass%) obtained in Synthesis Example 1 and 5.0 g of P2 (6 mass%) obtained in Synthesis Example 2, 5.0 g of P7 obtained in Synthesis Example 7 was used (6 mass%). ) and 5.0g obtained in Synthesis Example 8 Other than the P8 (6 mass%), the same operation as in Example 1 was carried out to obtain a uniform varnish, and a film having a film thickness of 100 nm was obtained on a glass substrate.
除取代合成例1中取得之5.0g之P1(6質量%)與合成例2中取得之5.0g之P2(6質量%)而改用合成例5中取得之5.0g之P5(6質量%)與合成例7中取得之5.0g之P7(6質量%)以外,其他進行與實施例1同樣之操作,取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 In place of 5.0 g of P1 (6 mass%) obtained in Synthesis Example 1 and 5.0 g of P2 (6 mass%) obtained in Synthesis Example 2, 5.0 g of P5 obtained in Synthesis Example 5 was used (6 mass%). In the same manner as in Example 1, except that 5.0 g of P7 (6 mass%) obtained in Synthesis Example 7 was used, a uniform varnish was obtained, and a film having a film thickness of 100 nm was obtained on a glass substrate.
除去代合成例2中取得之5.0g之P2(6質量%)而改用合成例6中取得之5.0g之P6(6質量%)以外,其他進行與實施例1同樣之操作,取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 The same operation as in Example 1 was carried out except that 5.0 g of P2 (6 mass%) obtained in Synthesis Example 2 was used instead of 5.0 g of P6 (6 mass%) obtained in Synthesis Example 6, and uniformity was obtained. A varnish was obtained, and a film having a film thickness of 100 nm was obtained on a glass substrate.
除取代合成例1中取得之5.0g之P1(6質量%)與合成例2中取得之5.0g之P2(6質量%)而改用合成例6中取得之5.0g之P6(6質量%)與合成例7中取得之5.0g之P7(6質量%)以外,其他進行與實施例1同樣之操作,取得均勻之清漆,又,於玻璃基材上得到膜厚100nm 之膜。 In place of 5.0 g of P1 (6 mass%) obtained in Synthesis Example 1 and 5.0 g of P2 (6 mass%) obtained in Synthesis Example 2, 5.0 g of P6 obtained in Synthesis Example 6 was used (6 mass%). In the same manner as in Example 1, except that 5.0 g of P7 (6 mass%) obtained in Synthesis Example 7 was used, a uniform varnish was obtained, and a film thickness of 100 nm was obtained on a glass substrate. The film.
除去代合成例1中取得之5.0g之P1(6質量%)與合成例2中取得之5.0g之P2(6質量%)而改用合成例2中取得之5.0g之P2(6質量%)與合成例9中取得之5.0g之P9(6質量%)以外,其他進行與實施例1同樣之操作,取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 5.0 g of P1 (6 mass%) obtained in Synthesis Example 1 and 5.0 g of P2 (6 mass%) obtained in Synthesis Example 2 were used, and 5.0 g of P2 obtained in Synthesis Example 2 was used instead (6 mass%). In the same manner as in Example 1, except that 5.0 g of P9 (6 mass%) obtained in Synthesis Example 9 was used, a uniform varnish was obtained, and a film having a film thickness of 100 nm was obtained on a glass substrate.
除取代合成例1中取得之5.0g之P1(6質量%)與合成例2中取得之5.0g之P2(6質量%)而改用合成例2中取得之P2(6質量%)與合成例10中取得之P10(6質量%)以外,其他進行與實施例1同樣之操作,取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 In place of 5.0 g of P1 (6 mass%) obtained in Synthesis Example 1 and 5.0 g of P2 (6 mass%) obtained in Synthesis Example 2, P2 (6 mass%) obtained in Synthesis Example 2 was used instead of synthesis. Other than the P10 (6 mass%) obtained in Example 10, the same operation as in Example 1 was carried out to obtain a uniform varnish, and a film having a film thickness of 100 nm was obtained on a glass substrate.
除取代合成例1中取得之5.0g之P1(6質量%)與合成例2中取得之5.0g之P2(6質量%)而改用合成例7中取得之5.0g之P7(6質量%)與合成例10中取得之5.0g之P10(6質量%),其他進行與實施例1同樣之操作,取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 In place of 5.0 g of P1 (6 mass%) obtained in Synthesis Example 1 and 5.0 g of P2 (6 mass%) obtained in Synthesis Example 2, 5.0 g of P7 obtained in Synthesis Example 7 was used (6 mass%). In the same manner as in Example 1, except that 5.0 g of P10 (6 mass%) obtained in Synthesis Example 10 was obtained, a uniform varnish was obtained, and a film having a film thickness of 100 nm was obtained on a glass substrate.
除取代合成例1中取得之5.0g之P1(6質量%)與合成例2中取得之5.0g之P2(6質量%)而改用合成例5中取得之3.0g之P5(6質量%)與合成例7中取得之3.0g之P7(6質量%)與合成例9中取得之3.0g之P9(6質量%)以外,其他進行與實施例1同樣之操作,取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 In place of 5.0 g of P1 (6 mass%) obtained in Synthesis Example 1 and 5.0 g of P2 (6 mass%) obtained in Synthesis Example 2, 3.0 g of P5 obtained in Synthesis Example 5 was used (6 mass%). In the same manner as in Example 1, except that 3.0 g of P7 (6 mass%) obtained in Synthesis Example 7 and 3.0 g of P9 (6 mass%) obtained in Synthesis Example 9 were used, a uniform varnish was obtained. Further, a film having a film thickness of 100 nm was obtained on a glass substrate.
除取代合成例2中取得之5.0g之P2(6質量%)而改用0.5g之丙二醇單甲基醚(PGME)以外,其他進行與實施例1同樣之操作,取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 The same procedure as in Example 1 was carried out, except that 5.0 g of P2 (6 mass%) obtained in Synthesis Example 2 was used instead of 0.5 g of propylene glycol monomethyl ether (PGME), and a uniform varnish was obtained. A film having a film thickness of 100 nm was obtained on a glass substrate.
除將旋轉塗佈、放置及燒成改為在氧濃度為20ppm之氮環境之手套箱中施行以外,其他進行與實施例1同樣之操作,取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 The same procedure as in Example 1 was carried out except that spin coating, placing and baking were carried out in a glove box having a nitrogen atmosphere of 20 ppm in oxygen atmosphere, and a uniform varnish was obtained, which was obtained on a glass substrate. A film having a film thickness of 100 nm.
除取代合成例1中取得之5.0g之P1(6質量%)與合成例2中取得之5.0g之P2(6質量%)而改用合成例5中 取得之5.0g之P5(6質量%)與合成例6中取得之5.0g之P6(6質量%)以外,其他進行與實施例1同樣之操作,取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 In the synthesis example 5, the substitution of 5.0 g of P1 (6 mass%) obtained in Synthesis Example 1 and 5.0 g of P2 (6 mass%) obtained in Synthesis Example 2 was used. The same procedure as in Example 1 was carried out except that 5.0 g of P5 (6% by mass) obtained in 5.0 g and 5.0 g of P6 (6 mass%) obtained in Synthesis Example 6 were obtained, and a uniform varnish was obtained. A film having a film thickness of 100 nm was obtained.
除將旋轉塗佈、放置及燒成改為在氧濃度為20ppm之手套箱中施行以外,其他進行與實施例14同樣之操作,取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 The same procedure as in Example 14 was carried out except that spin coating, standing and firing were carried out in a glove box having an oxygen concentration of 20 ppm, and a uniform varnish was obtained, and a film thickness of 100 nm was obtained on the glass substrate. The film.
除未施行在230℃之加熱板上燒成30分鐘之操作以外,其他進行與實施例1同樣之操作,於玻璃基材上得到膜厚120nm之膜。 A film having a film thickness of 120 nm was obtained on a glass substrate in the same manner as in Example 1 except that the operation was carried out for 30 minutes on a hot plate at 230 ° C.
除未施行在230℃之加熱板上燒成30分鐘之操作以外,其他進行與實施例14同樣之操作,於玻璃基材上得到膜厚120nm之膜。 A film having a film thickness of 120 nm was obtained on a glass substrate in the same manner as in Example 14 except that the operation was carried out for 30 minutes on a hot plate at 230 ° C.
除取代合成例1中取得之5.0g之P1(6質量%)與合成例2中取得之5.0g之P2(6質量%)而改用合成例1中 取得之5.0g之P1(1質量%)與合成例2中取得之5.0g之P2(1質量%)以外,其他進行與實施例1同樣之操作,取得均勻之清漆,又,於玻璃基材上得到膜厚20nm之膜。 The synthesis example 1 was used instead of 5.0 g of P1 (6 mass%) obtained in Synthesis Example 1 and 5.0 g of P2 (6 mass%) obtained in Synthesis Example 2. In the same manner as in Example 1, except that 5.0 g of P1 (1% by mass) and 5.0 g of P2 (1% by mass) obtained in Synthesis Example 2 were obtained, a uniform varnish was obtained, and the glass substrate was further obtained. A film having a film thickness of 20 nm was obtained.
除取代合成例1中取得之5.0g之P1(6質量%)與合成例2中取得之5.0g之P2(6質量%)而改用合成例5中取得之5.0g之P5(1質量%)與合成例6中取得之5.0g之P6(1質量%)以外,其他進行與實施例1同樣之操作,取得均勻之清漆,又,於玻璃基材上得到膜厚20nm之膜。 In place of 5.0 g of P1 (6 mass%) obtained in Synthesis Example 1 and 5.0 g of P2 (6 mass%) obtained in Synthesis Example 2, 5.0 g of P5 obtained in Synthesis Example 5 was used instead (1 mass%). In the same manner as in Example 1, except that 5.0 g of P6 (1% by mass) obtained in Synthesis Example 6 was used, a uniform varnish was obtained, and a film having a film thickness of 20 nm was obtained on a glass substrate.
除取代合成例1中取得之5.0g之P1(6質量%)與合成例2中取得之5.0g之P2(6質量%)而改用合成例5中取得之5.0g之P5(10質量%)與合成例6中取得之5.0g之P6(10質量%)以外,其他進行與實施例1同樣之操作,取得均勻之清漆,又,玻璃基材上得到膜厚200nm之膜。 In place of 5.0 g of P1 (6 mass%) obtained in Synthesis Example 1 and 5.0 g of P2 (6 mass%) obtained in Synthesis Example 2, 5.0 g of P5 obtained in Synthesis Example 5 was used (10% by mass). In the same manner as in Example 1, except that 5.0 g of P6 (10% by mass) obtained in Synthesis Example 6 was obtained, a uniform varnish was obtained, and a film having a film thickness of 200 nm was obtained on the glass substrate.
除將在加熱板上燒成5分鐘之溫度變更為40℃以外,其他進行與實施例1同樣之操作,取得均勻之清漆, 又,於玻璃基材上得到膜厚100nm之膜。 A uniform varnish was obtained in the same manner as in Example 1 except that the temperature at which the hot plate was baked for 5 minutes was changed to 40 ° C. Further, a film having a film thickness of 100 nm was obtained on a glass substrate.
除將在加熱板上燒成5分鐘之溫度變更為70℃以外,其他進行與實施例1同樣之操作,取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 The same procedure as in Example 1 was carried out except that the temperature was baked at 70 ° C for 5 minutes on a hot plate to obtain a uniform varnish, and a film having a film thickness of 100 nm was obtained on a glass substrate.
除將在加熱板上燒成5分鐘之溫度變更為90℃以外,其他進行與實施例1同樣之操作,取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 The same procedure as in Example 1 was carried out except that the temperature was baked at 90 ° C for 5 minutes on the hot plate to obtain a uniform varnish, and a film having a film thickness of 100 nm was obtained on the glass substrate.
除將在加熱板上燒成5分鐘之溫度變更為120℃以外,其他進行與實施例1同樣之操作,取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 The same procedure as in Example 1 was carried out except that the temperature was baked at 120 ° C for 5 minutes on a hot plate to obtain a uniform varnish, and a film having a film thickness of 100 nm was obtained on a glass substrate.
除將在加熱板上燒成5分鐘之溫度變更為40℃以外,其他進行與實施例14同樣之操作而取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 A uniform varnish was obtained in the same manner as in Example 14 except that the temperature was baked at 40 ° C for 5 minutes on the hot plate, and a film having a film thickness of 100 nm was obtained on the glass substrate.
除將在加熱板上燒成5分鐘之燒成溫度變為70℃以 外,其他進行與實施例14同樣之操作而取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 The firing temperature was changed to 70 ° C by firing on a hot plate for 5 minutes. The same procedure as in Example 14 was carried out to obtain a uniform varnish, and a film having a film thickness of 100 nm was obtained on a glass substrate.
除將在加熱板上燒成5分鐘之燒成溫度變更為90℃以外,其他進行與實施例14同樣之操作而取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 A uniform varnish was obtained in the same manner as in Example 14 except that the firing temperature was 5 minutes on the hot plate, and a film having a thickness of 100 nm was obtained on the glass substrate.
除將在加熱板上燒成5分鐘之燒成溫度變更為120℃以外,其他進行與實施例14同樣之操作而取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 A uniform varnish was obtained in the same manner as in Example 14 except that the firing temperature was 5 minutes on the hot plate, and a film having a thickness of 100 nm was obtained on the glass substrate.
除將旋轉塗佈結束後之放置時間變更為1分鐘以外,其他進行與實施例1同樣之操作而取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 A uniform varnish was obtained in the same manner as in Example 1 except that the standing time after the completion of the spin coating was changed to 1 minute, and a film having a film thickness of 100 nm was obtained on the glass substrate.
除將旋轉塗佈結束後之放置時間變更為5分鐘以外,其他進行與實施例1同樣之操作而取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 A uniform varnish was obtained in the same manner as in Example 1 except that the standing time after the completion of the spin coating was changed to 5 minutes, and a film having a film thickness of 100 nm was obtained on the glass substrate.
除將旋轉塗佈結束後之放置時間變更為10分鐘以外,其他進行與實施例1同樣之操作而取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 A uniform varnish was obtained in the same manner as in Example 1 except that the standing time after the completion of the spin coating was changed to 10 minutes, and a film having a film thickness of 100 nm was obtained on the glass substrate.
除將旋轉塗佈結束後之放置時間變更為72小時以外,其他進行與實施例1同樣之操作而取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 A uniform varnish was obtained in the same manner as in Example 1 except that the standing time after the completion of the spin coating was changed to 72 hours, and a film having a film thickness of 100 nm was obtained on the glass substrate.
除將旋轉塗佈結束後之放置時間變更為1分鐘以外,其他進行與實施例14同樣之操作而取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 A uniform varnish was obtained in the same manner as in Example 14 except that the standing time after the completion of the spin coating was changed to 1 minute, and a film having a film thickness of 100 nm was obtained on the glass substrate.
除將旋轉塗佈結束後之放置時間變更為5分鐘以外,其他進行與實施例14同樣之操作而取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 A uniform varnish was obtained in the same manner as in Example 14 except that the standing time after the completion of the spin coating was changed to 5 minutes, and a film having a film thickness of 100 nm was obtained on the glass substrate.
除將旋轉塗佈結束後之放置時間變更為10分鐘以外,其他進行與實施例14同樣之操作而取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 A uniform varnish was obtained in the same manner as in Example 14 except that the standing time after the completion of the spin coating was changed to 10 minutes, and a film having a film thickness of 100 nm was obtained on the glass substrate.
除將旋轉塗佈結束後之放置時間變更為72小時以外,其他進行與實施例14同樣之操作而取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 A uniform varnish was obtained in the same manner as in Example 14 except that the standing time after the completion of the spin coating was changed to 72 hours, and a film having a film thickness of 100 nm was obtained on the glass substrate.
除將合成例1中取得之P1(6質量%)改為4.0g且將合成例2中取得之P2(6質量%)改為6.0g以外,其他進行與實施例1同樣之操作而取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 The same operation as in Example 1 was carried out to obtain uniformity except that P1 (6 mass%) obtained in Synthesis Example 1 was changed to 4.0 g and P2 (6 mass%) obtained in Synthesis Example 2 was changed to 6.0 g. A varnish was obtained, and a film having a film thickness of 100 nm was obtained on a glass substrate.
除將合成例1中取得之P1(6質量%)該為6.0g且將合成例2中取得之P2(6質量%)改為4.0g以外,其他進行與實施例1同樣之操作而取得均勻之清漆,文,於玻璃基材上得到膜厚100nm之膜。 The same operation as in Example 1 was carried out except that P1 (6 mass%) obtained in Synthesis Example 1 was 6.0 g and the P2 (6 mass%) obtained in Synthesis Example 2 was changed to 4.0 g. A varnish, a film having a film thickness of 100 nm was obtained on a glass substrate.
除將合成例5中取得之P5(6質量%)改為1.0g且將合成例6中取得之P6(6質量%)改為9.0g以外,其他進行與實施例14同樣之操作而取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 The same operation as in Example 14 was carried out to obtain uniformity except that P5 (6 mass%) obtained in Synthesis Example 5 was changed to 1.0 g and P6 (6 mass%) obtained in Synthesis Example 6 was changed to 9.0 g. A varnish was obtained, and a film having a film thickness of 100 nm was obtained on a glass substrate.
除將合成例5中取得之P5(6質量%)改為2.0g且將合成例6中取得之P6(6質量%)改為8.0g以外,其他進行與實施例14同樣之操作而取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 The same operation as in Example 14 was carried out to obtain uniformity except that P5 (6 mass%) obtained in Synthesis Example 5 was changed to 2.0 g and P6 (6 mass%) obtained in Synthesis Example 6 was changed to 8.0 g. A varnish was obtained, and a film having a film thickness of 100 nm was obtained on a glass substrate.
除將合成例5中取得之P5(6質量%)改為3.0g且將合成例6中取得之P6(6質量%)改為7.0g以外,其他進行與實施例14同樣之操作而取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 The same operation as in Example 14 was carried out to obtain uniformity except that P5 (6 mass%) obtained in Synthesis Example 5 was changed to 3.0 g and P6 (6 mass%) obtained in Synthesis Example 6 was changed to 7.0 g. A varnish was obtained, and a film having a film thickness of 100 nm was obtained on a glass substrate.
除將合成例5中取得之P5(6質量%)改為4.0g且將合成例6中取得之P6(6質量%)改為6.0g以外,其他進行與實施例14同樣之操作而取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 The same operation as in Example 14 was carried out to obtain uniformity except that P5 (6 mass%) obtained in Synthesis Example 5 was changed to 4.0 g and P6 (6 mass%) obtained in Synthesis Example 6 was changed to 6.0 g. A varnish was obtained, and a film having a film thickness of 100 nm was obtained on a glass substrate.
除將合成例5中取得之P5(6質量%)改為6.0g且將合成例6中取得之P6(6質量%)改為4.0g以外,其他進行與實施例14同樣之操作而取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 The same operation as in Example 14 was carried out to obtain uniformity except that P5 (6 mass%) obtained in Synthesis Example 5 was changed to 6.0 g and P6 (6 mass%) obtained in Synthesis Example 6 was changed to 4.0 g. A varnish was obtained, and a film having a film thickness of 100 nm was obtained on a glass substrate.
除將合成例5中取得之P5(6質量%)改為7.0g且將合成例6中取得之P6(6質量%)改為3.0g以外,其他進行與實施例14同樣之操作而取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 The same operation as in Example 14 was carried out to obtain uniformity except that P5 (6 mass%) obtained in Synthesis Example 5 was changed to 7.0 g and P6 (6 mass%) obtained in Synthesis Example 6 was changed to 3.0 g. A varnish was obtained, and a film having a film thickness of 100 nm was obtained on a glass substrate.
除將合成例5中取得之P5(6質量%)改為8.0g且將合成例6中取得之P6(6質量%)改為2.0g以外,其他進行與實施例14同樣之操作而取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 The same operation as in Example 14 was carried out to obtain uniformity except that P5 (6 mass%) obtained in Synthesis Example 5 was changed to 8.0 g and P6 (6 mass%) obtained in Synthesis Example 6 was changed to 2.0 g. A varnish was obtained, and a film having a film thickness of 100 nm was obtained on a glass substrate.
除將合成例5中取得之P5(6質量%)改為9.0g且將合成例6中取得之P6(6質量%)改為1.0g以外,其他進行與實施例14同樣之操作而取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 The same operation as in Example 14 was carried out to obtain uniformity except that P5 (6 mass%) obtained in Synthesis Example 5 was changed to 9.0 g and P6 (6 mass%) obtained in Synthesis Example 6 was changed to 1.0 g. A varnish was obtained, and a film having a film thickness of 100 nm was obtained on a glass substrate.
除取代合成例1中取得之5.0g之P1(6質量%)與合成例2中取得之5.0g之P2(6質量%)而改用合成例1中取得之10.0g之P1(6質量%)以外,其他進行與實施例1同樣之操作,取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 In place of 5.0 g of P1 (6 mass%) obtained in Synthesis Example 1 and 5.0 g of P2 (6 mass%) obtained in Synthesis Example 2, 10.0 g of P1 obtained in Synthesis Example 1 was used instead (6 mass%). Other than the above, the same operation as in Example 1 was carried out to obtain a uniform varnish, and a film having a film thickness of 100 nm was obtained on a glass substrate.
除取代合成例1中取得之5.0g之P1(6質量%)與合成例2中取得之5.0g之P2(6質量%)而改用合成例2中取得之10.0g之P2(6質量%)以外,其他進行與實施例1同樣之操作,取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 In place of 5.0 g of P1 (6 mass%) obtained in Synthesis Example 1 and 5.0 g of P2 (6 mass%) obtained in Synthesis Example 2, 10.0 g of P2 obtained in Synthesis Example 2 was used instead (6 mass%). Other than the above, the same operation as in Example 1 was carried out to obtain a uniform varnish, and a film having a film thickness of 100 nm was obtained on a glass substrate.
除取代合成例1中取得之5.0g之P1(6質量%)與合成例2中取得之5.0g之P2(6質量%)而改用合成例3中取得之10.0g之P3(6質量%)以外,其他進行與實施例1同樣之操作,取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 In place of 5.0 g of P1 (6 mass%) obtained in Synthesis Example 1 and 5.0 g of P2 (6 mass%) obtained in Synthesis Example 2, 10.0 g of P3 obtained in Synthesis Example 3 was used (6 mass%). Other than the above, the same operation as in Example 1 was carried out to obtain a uniform varnish, and a film having a film thickness of 100 nm was obtained on a glass substrate.
除取代合成例1中取得之5.0g之P1(6質量%)與合成例2中取得之5.0g之P2(6質量%)而改用合成例4中取得之10.0g之P4(6質量%)以外,其他與比較例1同樣地進行試驗而於玻璃基材上得到膜厚100nm之膜。 In place of 5.0 g of P1 (6 mass%) obtained in Synthesis Example 1 and 5.0 g of P2 (6 mass%) obtained in Synthesis Example 2, 10.0 g of P4 obtained in Synthesis Example 4 was used instead (6 mass%). Other than the above, the test was carried out in the same manner as in Comparative Example 1, and a film having a film thickness of 100 nm was obtained on a glass substrate.
除取代合成例1中取得之5.0g之P1(6質量%)與合成例2中取得之5.0g之P2(6質量%)而改用合成例5中取得之10.0g之P5(6質量%)以外,其他進行與實施例 1同樣之操作,取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 In place of 5.0 g of P1 (6 mass%) obtained in Synthesis Example 1 and 5.0 g of P2 (6 mass%) obtained in Synthesis Example 2, 10.0 g of P5 obtained in Synthesis Example 5 was used instead (6 mass%). Other than the other embodiments and examples 1 In the same operation, a uniform varnish was obtained, and a film having a film thickness of 100 nm was obtained on a glass substrate.
除取代合成例1中取得之5.0g之P1(6質量%)與合成例2中取得之5.0g之P2(6質量%)而改用合成例6中取得之10.0g之P6(6質量%)以外,其他進行與實施例1同樣之操作,取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 In place of 5.0 g of P1 (6 mass%) obtained in Synthesis Example 1 and 5.0 g of P2 (6 mass%) obtained in Synthesis Example 2, 10.0 g of P6 obtained in Synthesis Example 6 was used instead (6 mass%). Other than the above, the same operation as in Example 1 was carried out to obtain a uniform varnish, and a film having a film thickness of 100 nm was obtained on a glass substrate.
除取代合成例1中取得之5.0g之P1(6質量%)與合成例2中取得之5.0g之P2(6質量%)而改用合成例7中取得之10.0g之P7(6質量%)以外,其他進行與實施例1同樣之操作,取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 In place of 5.0 g of P1 (6 mass%) obtained in Synthesis Example 1 and 5.0 g of P2 (6 mass%) obtained in Synthesis Example 2, 10.0 g of P7 obtained in Synthesis Example 7 was used (6 mass%). Other than the above, the same operation as in Example 1 was carried out to obtain a uniform varnish, and a film having a film thickness of 100 nm was obtained on a glass substrate.
除取代合成例1中取得之5.0g之P1(6質量%)與合成例2中取得之5.0g之P2(6質量%)而改用合成例8中取得之10.0g之P8(6質量%)以外,其他進行與實施例1同樣之操作,取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 In place of 5.0 g of P1 (6 mass%) obtained in Synthesis Example 1 and 5.0 g of P2 (6 mass%) obtained in Synthesis Example 2, 10.0 g of P8 obtained in Synthesis Example 8 was used (6 mass%). Other than the above, the same operation as in Example 1 was carried out to obtain a uniform varnish, and a film having a film thickness of 100 nm was obtained on a glass substrate.
除取代合成例1中取得之5.0g之P1(6質量%)與合成例2中取得之5.0g之P2(6質量%)而改用合成例9中取得之10.0g之P9(6質量%)以外,其他進行與實施例1同樣之操作,取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 In place of 5.0 g of P1 (6 mass%) obtained in Synthesis Example 1 and 5.0 g of P2 (6 mass%) obtained in Synthesis Example 2, 10.0 g of P9 obtained in Synthesis Example 9 was used (6 mass%). Other than the above, the same operation as in Example 1 was carried out to obtain a uniform varnish, and a film having a film thickness of 100 nm was obtained on a glass substrate.
除取代合成例1中取得之5.0g之P1(6質量%)與合成例2中取得之5.0g之P2(6質量%)而改用合成例10中取得之10.0g之P10(6質量%)以外,其他進行與實施例1同樣之操作,取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 In place of 5.0 g of P1 (6 mass%) obtained in Synthesis Example 1 and 5.0 g of P2 (6 mass%) obtained in Synthesis Example 2, 10.0 g of P10 obtained in Synthesis Example 10 was used (6 mass%). Other than the above, the same operation as in Example 1 was carried out to obtain a uniform varnish, and a film having a film thickness of 100 nm was obtained on a glass substrate.
除未施行在80℃之加熱板上燒成5分鐘及在230℃之加熱板上燒成30分鐘以外,其他進行與實施例1同樣之操作,取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 The same procedure as in Example 1 was carried out except that firing was performed on a hot plate at 80 ° C for 5 minutes and on a hot plate at 230 ° C for 30 minutes, and a uniform varnish was obtained on the glass substrate. A film having a film thickness of 100 nm was obtained.
除取代合成例1中取得之5.0g之P1(6質量%)與合成例2中取得之5.0g之P2(6質量%)而改用合成例7中取得之2.0g之P7(6質量%)與合成例8中取得之8.0g 之P8(6質量%)以外,其他進行與實施例1同樣之操作,取得均勻之清漆,又,於玻璃基材上得到膜厚100nm之膜。 In place of 5.0 g of P1 (6 mass%) obtained in Synthesis Example 1 and 5.0 g of P2 (6 mass%) obtained in Synthesis Example 2, 2.0 g of P7 (6 mass%) obtained in Synthesis Example 7 was used instead. ) and 8.0 g obtained in Synthesis Example 8. Other than the P8 (6 mass%), the same operation as in Example 1 was carried out to obtain a uniform varnish, and a film having a film thickness of 100 nm was obtained on a glass substrate.
作為於玻璃基材上未設置光取出膜之例,準備與實施例1相同之玻璃基材。 A glass substrate similar to that of Example 1 was prepared as an example in which a light extraction film was not provided on a glass substrate.
使用AFM以5μm×5μm之尺寸掃描並觀察各實施例1~46及比較例1~12中取得之玻璃基材上之膜(構造物)之表面,且評價有無藉由自我組織化而形成之凹凸,又,求取凸部之平均高度(表面粗度Ra)。尚且,於膜上形成有因自我組織化所成之凹凸時(即形成與分形之模樣之情況)則評為○,在未形成因自我組織化所成之凹凸時(即未形成分形之模樣之情況)則評為×。又,關於無光取出膜之比較例13,對其玻璃面(即,與形成有ITO之面相反側之面)之表面施行與上述實施例1同樣之操作,並進行AFM所成之觀察及凸部之平均高度之測量。其結果係如表2-1及表2-2所示。又,作為觀察結果之一例,將實施例1之AFM像展示於圖2,將實施例14之AFM像展示於圖3,將比較例2之AFM像展示於圖4。 The surface of the film (structure) on each of the glass substrates obtained in Examples 1 to 46 and Comparative Examples 1 to 12 was scanned by AFM at a size of 5 μm × 5 μm, and evaluated for self-organization. Concavity and convexity, and the average height (surface roughness Ra) of the convex portion is obtained. Further, when the unevenness due to self-organization is formed on the film (that is, when it is formed into a shape of a fractal), it is evaluated as ○, and when the unevenness due to self-organization is not formed (that is, the shape of the fractal is not formed) The case) is rated as ×. Further, in Comparative Example 13 in which the film was taken out without light, the same operation as in the above-described Example 1 was carried out on the surface of the glass surface (that is, the surface on the side opposite to the surface on which the ITO was formed), and the observation by AFM was carried out. Measurement of the average height of the projections. The results are shown in Table 2-1 and Table 2-2. Further, as an example of the observation result, the AFM image of Example 1 is shown in Fig. 2, the AFM image of Example 14 is shown in Fig. 3, and the AFM image of Comparative Example 2 is shown in Fig. 4.
對100mL之單頸梨型燒瓶添加9.0g之聚甲基丙烯酸甲酯(重量平均分子量;15000、Aldrich公司製)、0.18g之3-羥基黃酮(東京化成工業股份有限公司製)、82.62g之丙二醇單甲基醚乙酸酯(PGMEA),使用磁攪拌器進行攪拌後取得均勻之清漆。在此取得之清漆係作為測量螢光強度時之標準液。 To a 100 mL single neck pear type flask, 9.0 g of polymethyl methacrylate (weight average molecular weight; 15,000, manufactured by Aldrich Co., Ltd.), 0.18 g of 3-hydroxyflavone (manufactured by Tokyo Chemical Industry Co., Ltd.), and 82.62 g were added. Propylene glycol monomethyl ether acetate (PGMEA) was stirred using a magnetic stirrer to obtain a uniform varnish. The varnish obtained here is used as a standard solution for measuring the fluorescence intensity.
將此清漆(標準液)旋轉塗佈於實施例1~46及比較例1~12中製成之形成有各構造物之玻璃基材之ITO面側,在80℃之加熱板上燒成10秒鐘,而製成膜厚100nm之標準膜。且,將螢光光譜之測量條件設成激發波長為341.0nm、螢光起始波長為450nm、螢光結束波長為700nm、掃描速度為240nm/min,由標準膜側照射激發光,且從構造物側取出光,螢光係藉由讀取在531.0nm處顯現之極大螢光波峰而求得螢光強度。 The varnish (standard solution) was spin-coated on the ITO surface side of the glass substrate on which each structure was formed in Examples 1 to 46 and Comparative Examples 1 to 12, and fired on a hot plate at 80 ° C. In seconds, a standard film having a film thickness of 100 nm was formed. Further, the measurement conditions of the fluorescence spectrum were set such that the excitation wavelength was 341.0 nm, the fluorescence onset wavelength was 450 nm, the fluorescence end wavelength was 700 nm, and the scanning speed was 240 nm/min, and the excitation light was irradiated from the standard film side, and the structure was irradiated. Light was taken out from the object side, and the fluorescence was obtained by reading the maximum fluorescence peak appearing at 531.0 nm.
又,比較例13中係將上述之清漆(標準液)旋轉塗佈於玻璃基材之ITO面側且在80℃之加熱板上燒成10秒鐘而製成膜厚為100nm之標準膜。且,與上述實施例1相同之方法求取螢光強度。 Further, in Comparative Example 13, the varnish (standard solution) was spin-coated on the ITO surface side of the glass substrate and fired on a hot plate at 80 ° C for 10 seconds to obtain a standard film having a film thickness of 100 nm. Further, the fluorescence intensity was determined in the same manner as in the above Example 1.
螢光強度係在相對比較下進行,且將測量比較例1中取得之構造物所得之螢光強度規格化為1.00。實施例1~46及比較例1~13之相對螢光強度係如表2-1及表2-2所示。 The fluorescence intensity was measured under a relative comparison, and the fluorescence intensity obtained by measuring the structure obtained in Comparative Example 1 was normalized to 1.00. The relative fluorescence intensities of Examples 1 to 46 and Comparative Examples 1 to 13 are shown in Table 2-1 and Table 2-2.
如表2-1及表2-2所示,實施例1~46皆為於表面具有藉由自我組織化而形成之凹凸之構造物,即,形成於表面具有分形之模樣之凹凸之構造物。另一方面,比較例1~12中則未形成因自我組織化所成之凹凸。且,實 施例1~46與比較例1~12相比,其相對螢光強度為高,使用作為光取出膜時,已確認可提高光取出效率。因此,本發明之構造物可適宜使用作為LED元件等之光學裝置之光取出膜等。於以下更加詳述關於此等之結果。 As shown in Table 2-1 and Table 2-2, each of Examples 1 to 46 is a structure having irregularities formed by self-organization on the surface, that is, a structure formed on the surface having a pattern of irregularities on the surface. . On the other hand, in Comparative Examples 1 to 12, irregularities due to self-organization were not formed. And real In Examples 1 to 46, the relative fluorescence intensity was higher than that of Comparative Examples 1 to 12, and when used as a light extraction film, it was confirmed that the light extraction efficiency was improved. Therefore, the structure of the present invention can be suitably used as a light extraction film or the like as an optical device such as an LED element. The results of these are more detailed below.
作為聚合物之組合,實施例1~3、6及8為聚醯胺酸與聚醯胺酸之混合例,實施例4、7及9為聚醯胺酸與聚醯亞胺之混合例,實施例10為聚醯亞胺與聚醯亞胺之混合例,實施例14為聚醯胺酸與聚醯胺酸酯之混合例,實施例5為聚醯亞胺與聚醯胺酸酯之混合例,但在任一之混合中,皆形成於表面具有因自我組織化所形成之凹凸之構造物。又,實施例11為混合聚醯胺酸、聚醯亞胺及聚醯胺酸酯之3種類之聚合物之例,但於此情況時,仍可形成於表面具有因自我組織化所形成之凹凸之構造物。並且,實施例12中係使用單一之聚合物而並未混合相異聚合物之系統,但在包含聚合物之清漆之中因添加有對聚合物之溶解性極低之貧溶劑之PGME,故仍自我組織化而形成於表面具有因自我組織化所形成之凹凸之構造物。尚且,實施例1~6、12、13、15、16、18~24、29~32、37~39中,分形之模樣之基本圖形單位係如圖3所示般之蚯蚓狀。又,實施例7~11、14、17、25~28、33、43~46中,分形之模樣之基本圖形單位係如圖4所示般之半球狀。又,實施例34~36、40~42中,分形之模樣之基本圖形單位為孔形狀。 As a combination of polymers, Examples 1 to 3, 6 and 8 are examples of a mixture of polyacrylic acid and polyaminic acid, and Examples 4, 7 and 9 are examples of a mixture of polyamic acid and polyimine. Example 10 is a mixed example of polyimine and polyimine, and Example 14 is a mixed example of polylysine and polyphthalate, and Example 5 is a polyimine and a polyamidolate. In the case of mixing, in any mixing, a structure having irregularities formed by self-organization is formed on the surface. Further, Example 11 is an example in which three types of polymers of polyglycolic acid, polyimine, and polyglycolate are mixed. However, in this case, it may be formed on the surface by self-organization. Concave structure. Further, in the embodiment 12, a system in which a single polymer is used without mixing a dissimilar polymer is used, but in the varnish containing the polymer, PGME is added with a poor solvent having a very low solubility to the polymer, so A structure that is self-organized and formed on the surface with irregularities formed by self-organization. Further, in the examples 1 to 6, 12, 13, 15, 16, 18 to 24, 29 to 32, and 37 to 39, the basic pattern unit of the fractal pattern is as shown in FIG. Further, in the examples 7 to 11, 14, 17, 25 to 28, 33, and 43 to 46, the basic pattern unit of the fractal pattern is a hemispherical shape as shown in Fig. 4 . Further, in Examples 34 to 36 and 40 to 42, the basic pattern unit of the fractal pattern was a hole shape.
且,若比較實施例1~11之相對螢光強度時, 僅實施例2之相對螢光強度低於1.30,且發現相對螢光強度係有依附於構成聚合物之單體(二胺成分或四羧酸成分)骨架之傾向。實施例2中,構成於所使用之構造物形成用組成物中所含有之聚合物之單體骨架上並不具有能於分子內或分子間形成氫鍵之鍵結及能於分子內或分子間形成氫鍵之取代基之任一者,且亦不含有已混合之2種聚合物之任一種,因此實施例2中之相對強度較低。 Moreover, when comparing the relative fluorescence intensities of Examples 1 to 11, Only the relative fluorescence intensity of Example 2 was less than 1.30, and it was found that the relative fluorescence intensity tends to adhere to the skeleton of the monomer (diamine component or tetracarboxylic acid component) constituting the polymer. In the second embodiment, the monomer skeleton constituting the polymer contained in the composition for forming a structure to be used does not have a bond capable of forming a hydrogen bond in or between molecules and can be intramolecular or molecular. Either of the substituents forming a hydrogen bond, and also containing neither of the two polymers which have been mixed, the relative strength in Example 2 is low.
實施例1及13~15為旋轉塗佈、旋轉塗佈後之放置及燒成之環境相異之例。環境為大氣中、氧濃度20ppm之氮中之任一者中,皆形成於表面具有因自我組織化而成之凹凸之構造物,故得知是否產生自我組織化,並非係取決於此等製程之環境。又,在在氮環境中由於存有凸部之平均高度下降,且相對螢光強度降低之傾向,故可得知較佳在大氣中進行燒成為宜。 Examples 1 and 13 to 15 are examples in which the environment after spin coating, spin coating, and firing is different. Any one of the nitrogen in the atmosphere and having an oxygen concentration of 20 ppm is formed on a structure having irregularities formed by self-organization on the surface. Therefore, it is not determined by such a process whether or not self-organization is generated. The environment. Further, in the nitrogen atmosphere, since the average height of the convex portions is lowered and the relative fluorescence intensity tends to decrease, it is preferable to perform the combustion in the atmosphere.
實施例1及16、實施例14及17、比較例11為燒成步驟相異之例。從230℃下燒成30分鐘及80℃下燒成5分鐘之實施例1及實施例14,或未在230℃下燒成30分鐘但在80℃下燒成5分鐘之實施例16及實施例17中已因自我組織化而形成凹凸,但未進行燒成之比較例11中未產生自我組織化之結果,可知在形成具有因自我組織化而形成之凹凸之構造物時,燒成步驟則為必須者。尚且,實施例1、16、14及17中,可謂在藉由80℃下之5分鐘之燒成後,即產生自我組織化。 Examples 1 and 16, Examples 14 and 17, and Comparative Example 11 are examples in which the firing steps differ. Example 16 and Example 14 were carried out by firing at 230 ° C for 30 minutes and at 80 ° C for 5 minutes, or by firing at 30 ° C for 30 minutes but at 80 ° C for 5 minutes. In the case of the comparative example 11 in which the self-organization was formed by the self-organization, the self-organization was not produced, and it was found that the structure was formed when the structure having the irregularities formed by the self-organization was formed. It is a must. Further, in Examples 1, 16, 14, and 17, it can be said that self-organization is produced after firing at 80 ° C for 5 minutes.
實施例1及21~24、實施例14及25~28為燒 成溫度相異之例。得知在於旋轉塗佈後進行燒成之溫度即使為40℃~120℃之任一者中,皆形成具有因自我組織化所形成之凹凸之構造物。又,相對螢光強度由於在燒成溫度為70℃以上時安定化,故得知燒成溫度係以70℃以上為佳。 Examples 1 and 21 to 24, and Examples 14 and 25 to 28 are burned. An example of a temperature difference. It is known that the temperature at which the firing is performed after the spin coating is a structure having irregularities formed by self-organization even in any of 40 ° C to 120 ° C. Further, since the relative fluorescence intensity is stabilized when the firing temperature is 70 ° C or higher, it is preferable that the firing temperature is 70 ° C or higher.
實施例1及18、實施例14、19及20為構造物形成用組成物之固形分濃度,即聚合物之濃度相異之例。得知不取決於因固形分濃度之增加所致之膜厚之增加,皆可形成於表面具有因自我組織化所成之凹凸之構造物。又,相對螢光強度係在固形分濃度為最高且凸部之平均高度為最高之實施例20中變強,故得知構造物在設置於取出光之最前面時,以固形分濃度高且膜厚大者為有利。 Examples 1 and 18, and Examples 14, 19, and 20 are examples in which the solid content concentration of the composition for forming a structure, that is, the concentration of the polymer differs. It is known that the increase in film thickness due to an increase in the solid content concentration can be formed on a structure having irregularities formed by self-organization. Further, the relative fluorescence intensity was strong in Example 20 in which the solid content concentration was the highest and the average height of the convex portion was the highest, and it was found that the structure had a high solid concentration when it was placed at the forefront of the extracted light. It is advantageous to have a large film thickness.
實施例1及29~32、實施例14及33~36為旋轉塗佈結束後之放置時間相異之例。得知旋轉塗佈結束後之放置時間在10秒鐘~72小時之任一者中,皆形成具有因自我組織化而形成之凹凸之構造物。由於放置時間係直接連結到實際製造製程之節拍時間,且放置時間越短則製造時間變得越短而為佳,故以10秒~10分為佳,較佳為10秒以上~5分。 Examples 1 and 29 to 32, and Examples 14 and 33 to 36 are examples in which the placement time after the completion of the spin coating is different. It was found that the standing time after the completion of the spin coating was a structure having irregularities formed by self-organization in any of 10 seconds to 72 hours. Since the placement time is directly linked to the tact time of the actual manufacturing process, and the shorter the placement time is, the shorter the manufacturing time is, so it is preferably 10 seconds to 10 minutes, preferably 10 seconds or more and 5 minutes.
實施例1、37及38、實施例14及39~46為聚合物之混合比例相異之例。從相對螢光強度增加之觀點,相異聚合物之第1聚合物與第2聚合物之混合率係在第1聚合物:第2聚合物=40:60(質量%)至第1聚合物: 第2聚合物=60:40(質量%)之範圍內為佳,且得知任一之聚合物之比率在70質量%以上時則降低。 Examples 1, 37 and 38, and Examples 14 and 39 to 46 are examples in which the mixing ratios of the polymers are different. From the viewpoint of an increase in relative fluorescence intensity, the mixing ratio of the first polymer to the second polymer of the dissimilar polymer is in the first polymer: the second polymer = 40: 60 (% by mass) to the first polymer. : It is preferable that the second polymer = 60:40 (% by mass) is contained, and it is found that the ratio of any of the polymers is 70% by mass or more.
又,實施例4及比較例12亦係聚合物之混合比例相異之例。在使用混合含有聚醯胺酸之P8及含有聚醯亞胺之P7之構造物形成用組成物時,在實施例4中雖形成具有因自我組織化所形成之凹凸之構造物,但在聚合物比設為聚醯亞胺:聚醯胺酸=20:80(質量%)之比較例12中,並未形成因自我組織化所成之凹凸。此現象推測係因在此P7之聚醯亞胺與P8之聚醯胺酸之情況時,雖使用相異2種類之聚醯亞胺等,但由於上層(聚醯亞胺)與下層(聚醯胺酸)清楚地分離,故膜表面變得係與上層之聚醯亞胺之單獨膜相同,故未產生自我組織化,進而未發現分形之模樣所致。 Further, Example 4 and Comparative Example 12 are also examples in which the mixing ratio of the polymers is different. In the case of using a structure for forming a structure containing P8 containing polyamic acid and P7 containing polyimine, a structure having irregularities formed by self-organization is formed in Example 4, but polymerization is carried out. In Comparative Example 12 in which the ratio was set to polyimine: polyamine: 20:80 (% by mass), irregularities due to self-organization were not formed. This phenomenon is presumed to be due to the use of two different types of polyamidene in the case of the polyimine of P7 and the polyamine of P8, but the upper layer (polyimine) and the lower layer (polymerized) The proline acid was clearly separated, so that the surface of the film became the same as the single film of the upper layer of the polyimide, so that no self-organization occurred, and no fractal shape was observed.
比較例1~12在與具有於表面形成有因自我組織化所成之凹凸之構造物的實施例相比,其相對螢光強度低且光取出效率亦差。尚且,比較例1~12之中雖有形成相對凸部之平均高度較高之凹凸者,但如圖4所示般,比較例2等所形成之凹凸並非係因自我組織化所形成之凹凸。即,於50μm四方向中未觀察到基本單位圖形,其係於膜表面之面內上起因於均勻之膜粗糙之凹凸。 In Comparative Examples 1 to 12, the relative fluorescence intensity was low and the light extraction efficiency was also inferior to the example having the structure in which the unevenness formed by self-organization was formed on the surface. Further, in Comparative Examples 1 to 12, although irregularities having a relatively high average height with respect to the convex portion were formed, as shown in FIG. 4, the unevenness formed in Comparative Example 2 or the like was not a bump formed by self-organization. . That is, no basic unit pattern was observed in the four directions of 50 μm, which was caused by the unevenness of the uniform film roughness in the plane of the film surface.
比較例13為未設置光取出膜時之相對螢光強度,故其取出光取出效率最差。由此可知,若使用聚醯亞胺及聚醯亞胺前驅物作為光取出膜時,即可提高光取出效率,且在作成於表面具有因自我組織化而形成之凹凸之構 造物時,可更加提升光取出效率。 In Comparative Example 13, the relative fluorescence intensity when the light extraction film was not provided was the worst, and the light extraction efficiency was the worst. From this, it can be seen that when the polyimide and the polyimide precursor are used as the light extraction film, the light extraction efficiency can be improved, and the surface formed by the self-organization can be formed on the surface. When the object is created, the light extraction efficiency can be further improved.
又,上述實施例1~46即使各別重複30次,仍取得相同之結果(形成因自我組織化所成之凹凸、凸部之平均高度),故已確認其再現性非常優良。 Further, in the above-described Examples 1 to 46, even if the results were repeated 30 times, the same result (the unevenness due to self-organization and the average height of the convex portion) was obtained, and it was confirmed that the reproducibility was extremely excellent.
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JPH0820721A (en) * | 1994-07-05 | 1996-01-23 | Shin Etsu Chem Co Ltd | Polyimide film and its production |
JP4834949B2 (en) * | 2003-07-24 | 2011-12-14 | 東レ株式会社 | Thermosetting resin composition and electronic component using the same |
JP2009013384A (en) * | 2007-07-09 | 2009-01-22 | Nippon Paint Co Ltd | Easily slipable anti-blocking photocurable resin composition, anti-blocking structure with the same coated and cured on base material, and method of manufacturing the same |
WO2009096204A1 (en) * | 2008-01-29 | 2009-08-06 | Konica Minolta Opto, Inc. | Organic electroluminescence element, display device and lighting equipment |
EP2278855A4 (en) * | 2008-03-28 | 2011-05-18 | Sumitomo Chemical Co | Organic electroluminescent device |
JP2012103506A (en) * | 2010-11-10 | 2012-05-31 | Tokyo Univ Of Science | Pattern forming method |
WO2013099937A1 (en) * | 2011-12-28 | 2013-07-04 | 日産化学工業株式会社 | Liquid crystal aligning agent, liquid crystal alignment membrane, liquid crystal display element, and method for manufacturing liquid crystal display element |
CN104245843A (en) * | 2012-01-26 | 2014-12-24 | 日产化学工业株式会社 | Method for preparing polyimide varnish, and liquid crystal aligning agent |
-
2013
- 2013-10-02 WO PCT/JP2013/076850 patent/WO2014054703A1/en active Application Filing
- 2013-10-02 JP JP2014539793A patent/JP6384668B2/en active Active
- 2013-10-03 TW TW102135840A patent/TWI535335B/en not_active IP Right Cessation
Also Published As
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JP6384668B2 (en) | 2018-09-05 |
WO2014054703A1 (en) | 2014-04-10 |
TW201419943A (en) | 2014-05-16 |
JPWO2014054703A1 (en) | 2016-08-25 |
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