TWI531095B - Light emitting diode device - Google Patents

Description

Light-emitting diode device

The present disclosure relates to a light emitting diode device and to a light emitting diode device for forming an emitted light into an elliptical light shape.

With the popularity of thin, high-resolution camera phones, high-brightness LED flashlights are standard equipment for camera phones to compensate for poor image quality in low-light indoors. However, since the color temperature of the LED flashlight used in the current camera phone is a single color temperature, and is used under a specific light source environment (for example, a warm color light source), the photograph taken often makes the target white and the background is yellowish, so it is often necessary Use the post-software to adjust the white balance to compensate for the difference in color temperature.

In order to compensate for the above shortcomings, a color-changing LED flash lamp is provided to simulate a natural indoor light source.

The present disclosure relates to a color-changeable light-emitting diode device, which is provided by a wafer by a lens and a wafer design in a light-emitting diode device. The light forms an elliptical shape. In addition, the light-emitting diode device according to the embodiment of the present disclosure has a more uniform light distribution, and can also be manufactured in an existing process manner without adding an additional process.

According to the disclosure, a light emitting diode device includes a substrate, a first wafer and a second wafer, and a lens group. The first wafer and the second wafer are disposed on the substrate to respectively emit light of a first color temperature and a second color temperature. The lens group is disposed above the first wafer and the second wafer, and may include at least two lenses respectively corresponding to the first wafer and the second wafer. The lens includes a curved surface having a radius of curvature m on a first plane and a radius of curvature of the curved surface on a second plane. The first plane is perpendicular to the second plane and m is not equal to n.

According to the present disclosure, a light emitting diode device is provided, including a first wafer and a lens group. The first wafer has a plurality of first sub-regions. The first sub-region emits light of at least two color temperatures. The lens group is disposed on the first wafer. The light emitted by the first wafer forms an elliptical shape through a lens group in a target area.

In order to provide a better understanding of the above and other aspects of the present invention, the following detailed description of the embodiments and the accompanying drawings

100, 200, 300‧‧‧Lighting diode devices

10‧‧‧Substrate

21, 61‧‧‧ first chip

22, 62‧‧‧ second chip

30, 70‧ ‧ lens group

301, 302‧‧‧ lens

303‧‧‧Support

35‧‧‧ accommodating space

40‧‧‧ recess

50‧‧‧Reflective structure

611, 612, 613, 614‧‧‧ first subregion

621, 622, 623, 624‧‧‧ second subregion

63‧‧‧ wafer

631, 632, 633, 634‧‧ sub-areas

80‧‧‧ Shield

90‧‧‧ Targets

A-A’, B-B’, D-D’‧‧‧ hatching

C1‧‧‧ surface

E1, E2‧‧‧ area

m, n‧‧‧ radius of curvature

R‧‧‧The ratio of the radius of curvature n to the radius of curvature m

X, Y, Z‧‧‧ coordinate axis

FIG. 1 is a perspective view of a light emitting diode device according to an embodiment of the present disclosure.

Fig. 2A is a plan view showing the light emitting diode device of Fig. 1.

Figure 2B is a cross-sectional view taken along the line A-A' of the light-emitting diode device of Figure 2A. Sectional view.

Fig. 2C is a cross-sectional view of the light-emitting diode device of Fig. 2A taken along line B-B'.

FIG. 3 is a cross-sectional view of the light emitting diode device according to another embodiment of the present invention in a Y-Z plane.

4A and 5A are diagrams showing the luminance distribution of the light-emitting diode device of the embodiment of the present invention projected onto the long side of an object.

4B and 5B are diagrams showing the luminance distribution of the short side of a target projected by the light-emitting diode device of the embodiment of the present disclosure.

FIG. 6A is a diagram showing a luminance distribution of a light emitting diode device of a comparative example projected onto a long side of an object.

FIG. 6B is a diagram showing a luminance distribution of a light-emitting diode device of a comparative example projected onto a short side of an object.

FIG. 7 is a schematic perspective view of a light emitting diode device according to an embodiment of the present disclosure.

Fig. 8A is a plan view showing the light emitting diode device of Fig. 7.

Figure 8B is a cross-sectional view of the light-emitting diode device of Figure 8A taken along line D-D'.

FIG. 9 is a schematic view showing the first wafer and the second wafer of the embodiment of the present invention projecting light onto a target.

FIG. 10 is a schematic view of another wafer of the disclosed embodiment.

FIG. 11A is a diagram showing a luminance distribution of a light emitting diode device of the embodiment of the present disclosure projected onto a long side of an object.

FIG. 11B is a diagram showing the brightness distribution of the short side of a target projected by the light emitting diode device of the embodiment.

Embodiments of the present invention will be described in detail below with reference to the drawings. The same reference numerals are used to designate the same or similar parts. It is to be noted that the drawings have been simplified to clearly illustrate the contents of the embodiments, and the dimensional ratios in the drawings are not drawn to the scale of the actual products, and thus are not intended to limit the scope of the present invention.

FIG. 1 is a perspective view of a light emitting diode device 100 according to an embodiment of the present disclosure. FIG. 2A is a plan view showing the light-emitting diode device 100 of FIG. 1 . Fig. 2B is a cross-sectional view of the light-emitting diode device 100 of Fig. 2A taken along line A-A'. Fig. 2C is a cross-sectional view of the light-emitting diode device 100 of Fig. 2A taken along line B-B'.

Referring to FIGS. 1 to 2C, the LED device 100 of the present disclosure includes a substrate 10, a first wafer 21 and a second wafer 22, and a lens group 30. The first wafer 21 and the second wafer 22 are disposed on the substrate 10, and the first wafer 21 and the second wafer 22 respectively emit light of a first color temperature and a second color temperature. The lens group 30 is disposed above the first wafer 21 and the second wafer 22, and the lens group 30 includes at least two lenses 301, 302 corresponding to the first wafer 21 and the second wafer 22, respectively.

The lenses 301, 302 include a curved surface C1. The radius of curvature of the curved surface C1 on a first plane (for example, the Y-Z plane of FIG. 2B) is m; the radius of curvature of the curved surface C1 on a second plane (for example, the X-Z plane of FIG. 2C) is n. Further, m is not equal to n, and the light emitted from the first wafer 21 or the second wafer 22 is formed into an elliptical shape.

Referring to FIG. 2A, in the present embodiment, since the first wafer 21 and the second wafer 22 are arranged in an array manner with each other, the upper portion corresponds to the first wafer 21 and the second wafer 22 The lenses 301 and 302 are also arranged in an array. Therefore, the difference between FIG. 2B and FIG. 2C is that the curved surface C1 of FIG. 2B and the curved surface C1 of FIG. 2C have different curvature radii.

In one embodiment, the ratio of the radius of curvature n of the curved surface C1 on the second plane (eg, the XZ plane of FIG. 2C) to the radius of curvature m of the first plane (eg, the YZ plane of FIG. 2B) R (ie, n/m = R), and R is between 1.2 and 20.

In addition, the light having the first color temperature emitted by the first wafer 21 is, for example, a warm white light (Warm White), and the light emitted by the second wafer 22 having the second color temperature is, for example, a cool white light (Cool White). In an embodiment, the warm white light is, for example, 3,000 K, and the cool white light is, for example, 6,000 K or 6,500 K.

Since the curved surface C1 of the lenses 301 and 302 of the embodiment of the present disclosure has different radii of curvature in two mutually perpendicular planes (XZ plane and YZ plane), the first wafer 21 or the second wafer 22 or a combination thereof is emitted. The light can appear in an elliptical shape. That is, the light emitted by the first wafer 21 or the second wafer 22, or a combination thereof, may pass through the lens group 30 (including, for example, the lenses 301 and 302) in an elliptical shape in a target region. Furthermore, the light emitted by the first wafer 21 and the second wafer 22 has different color temperatures. Therefore, the first wafer 21 and the second wafer 22 can be mixed to achieve a color temperature optimum for the shooting environment.

In general, the size of the photographs taken is mainly rectangular, for example, 4:3, 5:4 or 16:9, which are common shooting sizes. Therefore, the elliptical shape of the light emitting diode device 100 of the embodiment of the present disclosure has a lighter distribution, and the light distribution is more evenly distributed, which can effectively avoid the loss of the shooting details due to insufficient light.

In addition, in the embodiment of the present disclosure, the lenses 301 and 302 of the LED device 100 are more suitable because the light emitted by the wafer is generally stronger at the center. Including an astigmatism structure, the astigmatism structure may correspond to the centers of the first wafer 21 and the second wafer 22.

For example, as shown in FIGS. 2B and 2C, in the present example, the astigmatism structure of the light-emitting diode device 100 is a recess 40, and the recess 40 is located at a position of the lens with respect to the curved surface C1. That is, the curved surface C1 is located on one side of the lenses 301, 302 near the first wafer 21 and the second wafer 22, and the concave portion 40 is located on the side of the lenses 301, 302 away from the first wafer 21 and the second wafer 22.

However, the present disclosure does not limit the astigmatism structure to the recess 40. In some embodiments, the astigmatism structure can also be disposed in the lens through a mask, such as a black matrix, to achieve a central shading or astigmatism effect. In addition, some special materials or particles may be added to the lenses 301 and 302, such as titanium dioxide (TiO ₂ ) and cerium oxide (SiO ₂ ), and the astigmatism effect can also be achieved.

In one embodiment, the lens group of the LED device 100 of the present disclosure further includes a support portion 303. The support portion 303 can form an accommodation space 35 between the substrate 10 and the lens group 30. As shown in FIGS. 2B and 2C, the first wafer 21 and the second wafer 22 may be disposed in the accommodating space 35.

However, the disclosure is not limited thereto. FIG. 3 is a cross-sectional view of the light emitting diode device 200 of the other embodiment in the Y-Z plane. As shown, the LED device 200 can further include a reflective structure 50. The reflective structure 50 is disposed between the substrate 10 and the lens group 30 , and the first wafer 21 and the second wafer 22 are disposed in the reflective structure 50 . In this embodiment, the reflective structure 50 not only provides a space for accommodating the first wafer 21 and the second wafer 22, but also reflects light emitted by the first wafer 21 and the second wafer 22 to enhance light extraction efficiency.

4A, 5A illustrate the projection of the LED device 100 of the disclosed embodiment The brightness distribution map to the long side of the target object, and FIGS. 4B and 5B are diagrams showing the brightness distribution of the short side of the object to which the light-emitting diode device 100 of the embodiment of the present invention is projected. 6A is a brightness distribution diagram of a light emitting diode device of a comparative example projected onto a long side of a target object, and FIG. 6B is a view showing a light emitting diode device of a comparative example projected onto a short side of a target object. Brightness distribution map.

Here, the target is a rectangle having a long side and a short side, and the long side is perpendicular to the short side. For example, the target is, for example, a long side: a rectangle with a short side of 4:3. In addition, the distance between the target and the light-emitting diode is about 1 meter, that is, the projection distance of the light-emitting diode is about 1 meter.

In the light-emitting diode device 100 of FIGS. 4A and 4B, the curvature radius n of the curved surface C1 on the second plane (for example, the XZ plane of FIG. 2C) is on the first plane (for example, the YZ plane of FIG. 2B). The ratio R (=n/m) of the radius of curvature m is 4/3. In the light-emitting diode device 100 of FIGS. 5A and 5B, the curvature radius n of the curved surface C1 on the second plane (for example, the XZ plane of FIG. 2C) is on the first plane (for example, the YZ plane of FIG. 2B). The ratio R (=n/m) of the radius of curvature m is 5/3. The light-emitting diode devices of Figs. 6A and 6B are measured using a conventional lens group.

The light-emitting diode device 100 of FIGS. 4A and 4B (R=n/m=4/3) has a uniformity of >63%. The light-emitting diode device 100 of FIGS. 5A and 5B (R=n/m=5/3) has a uniformity of >61%. In contrast, in the light-emitting diode device of FIGS. 6A and 6B, since the conventional lens group is used, the brightness is significantly weaker in the peripheral portion than in the central portion, and thus the central portion of the sixth and sixth images has a peak. That is to say, in the light-emitting diode devices of FIGS. 4A and 4B and FIGS. 5A and 5B, the uniformity of the emitted light is significantly larger than that of the light-emitting diode device of FIGS. 6A and 6B.

FIG. 7 is a perspective view of a light emitting diode device 300 according to an embodiment of the present disclosure. Figure. FIG. 8A is a plan view showing the light-emitting diode device 300 of FIG. 7. Figure 8B is a cross-sectional view of the light-emitting diode device 100 of Figure 8A taken along line D-D'.

Referring to FIGS. 7-8B, the LED device 300 of the present disclosure includes a first wafer 61 and a lens group 70. The first wafer 61 has a plurality of first sub-regions, and the first sub-regions can emit light of at least two color temperatures, and the light emitted by the first wafer 61 can be mixed to form an elliptical light.

For example, as shown in FIG. 8A, the first wafer 61 has four first sub-regions 611, 612, 613, and 614, and the first sub-regions 611, 612, 613, and 614 are arranged in an array. The light emitted by the first sub-regions 611, 612, 613 and 614 includes at least a cool white light and a warm white light. For example, the first sub-regions 611, 614 can emit cool white light, and the first sub-regions 612, 613 can emit warm white light. In an embodiment, the warm white light is, for example, 3,000 K, and the cool white light is, for example, 6,000 K or 6,500 K.

However, the disclosure is not limited thereto. In other embodiments, the first sub-regions 611, 612, 613, and 614 can respectively emit red, green, blue, and white, or the first sub-regions 611, 612. 613 and 614 can also emit red, green, blue and yellow, respectively. In another embodiment, the first sub-regions 611, 612, 613, and 614 can emit red, green, warm white, and cool white light, respectively.

In addition, the number of the first sub-areas is not limited to four. In an embodiment, the first wafer 61 may have six first sub-regions arranged in an array of 3 x 2 . These first sub-regions may have two first sub-regions emitting red light, two first sub-regions emitting green light, and two first sub-regions emitting blue or white light.

The LED device 300 of the embodiment may also include a second chip. 62. The second wafer 62 has a plurality of second sub-regions, and the second sub-regions can also emit light of at least two color temperatures.

For example, the second wafer 62 has four second sub-regions 621, 622, 623, and 624, and the second sub-regions 621, 622, 623, and 624 are arranged in an array. Similar to the first sub-area, the light emitted by the second sub-areas 621, 622, 623 and 624 includes at least a cool white light and a warm white light, for example, the second sub-areas 621, 624 can emit warm white light, and the second sub-area 622 623 can emit cool white light. In an embodiment, the warm white light is, for example, 3,000 K, and the cool white light is, for example, 6,000 K or 6,500 K.

FIG. 9 is a schematic view showing the first wafer 61 and the second wafer 62 of the embodiment of the present invention projecting light onto a target 90. As shown in FIG. 9, the object 90 may include a region E1 and a region E2 projected by different sub-regions of the first wafer 61 and the second wafer 62, respectively. In the present embodiment, one of the second sub-regions 621, 622, 623 and 624 corresponds to one of the first sub-regions 611, 612, 613 and 614, and projects light to the same region of the object 90. .

For example, the first sub-region 611 and the second sub-region 621 project light to the region E1 of the object 90, and the first sub-region 612 and the second sub-region 622 project light to the region E2 of the target 90. In this embodiment, the first sub-region 612 and the second sub-region 621 emit warm white light, and the first sub-region 611 and the second sub-region 622 emit cool white light.

In addition, each of the first sub-regions 611, 612, 613, and 614 in the first wafer 61 and each of the second sub-regions 621, 622, 623, and 624 in the second wafer 62 are independently regulated. That is, the region E1 of the target 90 can be adjusted by the first sub-region 611 and the second sub-region 621 to achieve a desired brightness and color temperature, and the region E2 of the target 90 can pass through the first sub-region. The adjustment of 612 and the second sub-region 622 achieves the desired brightness and color temperature.

Due to the structural design of the light-emitting diode device 300 of the embodiment of the present disclosure, the target (photographing) object can be used to control the light by using the flash of the light-emitting diode device 300. In other words, through sub-regional dimming, the captured photos are brought closer to the true color.

In addition, the LED device 300 of the embodiment of the present disclosure can adjust the shape of the wafer by a Thin Film LED Packaging (TFP) process, and can simply divide the wafer into a plurality of sub-regions. Moreover, since not only a single color temperature light is emitted from the same wafer (for example, the first wafer 61), the richness of the photographing color can be further increased.

In the disclosed embodiment, the center of each of the first sub-regions 611, 612, 613 and 614 in the first wafer 61 of the LED device 300 may have a spacer region 65 (as shown in FIG. 8A). The first sub-regions 611, 612, 613 and 614 are L-shaped to form a spacer region 65. Similarly, each of the second sub-regions 621, 622, 623, and 624 in the second wafer 62 may also be L-shaped with a spacer region 65 in the center. Here, the formation of the spacer region 65 prevents the central region of the wafer from being bright, and the surrounding region is low in brightness, resulting in a phenomenon in which the brightness of the light projected onto the object is not uniform.

However, the wafer of the present disclosure is not limited to the above shape. FIG. 10 is a schematic view of another wafer 63 in accordance with an embodiment of the present invention. As shown in Fig. 10, the wafer 63 includes sub-regions 631, 632, 633 and 634. In the present embodiment, the sub-regions 631, 632, 633 and 634 are rectangular and arranged in an array. In addition, the center of the sub-regions 631, 632, 633 and 634 of the wafer 63 further includes a shield 80.

In one embodiment, the mask 80 can be, for example, a reflective diffuser or a black patch, and the shape and structure of the mask are based on the shape of the wafer and the positional relationship of the lens groups. This is not the same as this disclosure.

In the disclosed embodiments, different color temperature fluorescent coatings can be accurately applied over the wafer by coating. In one embodiment, the coating can also be applied using a spray phosphor coating.

It is to be noted that the light emitting diode device of the disclosed embodiment divides the wafer into a plurality of sub-regions which are controlled by different drivers. In addition, although a similar effect can be achieved by providing a plurality of smaller-sized wafers, a smaller-sized wafer is difficult in the manufacturing process, and problems such as wire breakage are liable to occur.

FIG. 11A is a diagram showing a luminance distribution of a light-emitting diode device (for example, the light-emitting diode device 300 of FIG. 8A) projected onto a long side of a target object, and FIG. 11B is a view showing the implementation of the present disclosure. An example of a light-emitting diode device (for example, the light-emitting diode device 300 of FIG. 8A) is projected onto a short-side luminance distribution map of a target. Similarly, the target system is a rectangle having long and short sides, and the long sides are perpendicular to the short sides. For example, the target is, for example, a long side: a rectangle with a short side of 4:3. In addition, the distance between the target and the light-emitting diode is about 1 meter, that is, the projection distance of the light-emitting diode is about 1 meter.

The LED device 300 of FIGS. 11A and 11B has a first wafer 61 and a second wafer 62, and has first sub-regions 611, 612, 613 and 614 and a second sub-region 621 which are independently adjustable. 622, 623 and 624.

Compared with the conventional light-emitting diode device of FIGS. 6A and 6B, since the wafer does not have a spacer region, the brightness thereof is significantly weaker in the surrounding portion than in the central portion, so that the central portions of the 6A and 6B images are generated. A peak. That is to say, in the light-emitting diode device of FIGS. 11A and 11B, the uniformity of the emitted light is significantly larger than that of the light-emitting diode device of FIGS. 6A and 6B.

According to the above description, the light-emitting diode device of the embodiment of the present invention can emit light having an elliptical shape due to its structural design, and the light distribution is more than that of the conventional light-emitting diode device. Average. In addition, in the light emitting diode of the present disclosure, light of different color temperatures can be emitted. In an embodiment, the target subject can be partitioned to control light. In other words, through sub-regional dimming, the captured photos are brought closer to the true color.

In summary, although the disclosure has been disclosed in the above embodiments, it is not intended to limit the invention. A person skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the scope of protection of this disclosure is subject to the definition of the scope of the appended claims.

100‧‧‧Lighting diode device

10‧‧‧Substrate

21‧‧‧First chip

22‧‧‧second chip

30‧‧‧ lens group

40‧‧‧ recess

X, Y, Z‧‧‧ coordinate axis

Claims (14)

An LED device includes: a substrate; a first wafer and a second wafer disposed on the substrate to respectively emit a first color temperature and a second color temperature; and a lens group disposed on the substrate Above the first wafer and the second wafer, the lens group includes at least two lenses respectively corresponding to the first wafer and the second wafer, the lens comprising: a curved surface having a radius of curvature in a first plane The curved surface has a radius of curvature n on a second plane, wherein the first plane is perpendicular to the second plane, and m is not equal to n. The illuminating diode device of claim 1, wherein the lens further comprises: an astigmatism structure corresponding to a center of the first wafer and the second wafer. The illuminating diode device of claim 2, wherein the astigmatism structure is a recess, the recess being opposite to the curved surface. The light-emitting diode device according to claim 1, wherein n/m=R and R is between 1.2 and 20. The illuminating diode device of claim 1, wherein the lens group further comprises: a supporting portion for forming an accommodating space between the substrate and the lens group, so that the first wafer and the first wafer The second wafer is disposed in the accommodating space. The illuminating diode device of claim 1, further comprising: a reflective structure disposed between the substrate and the lens group, wherein the first wafer and the second wafer are disposed on the reflective structure in. The illuminating diode device of claim 1, wherein the first color temperature is a warm white light, and the second color temperature is a cool white light. The light-emitting diode device according to claim 1, wherein the light emitted by the first wafer or the second wafer or a combination thereof passes through the lens group in an elliptical shape in a target region. A light emitting diode device comprising: a first wafer having a plurality of first sub-regions, the first sub-regions emitting light of at least two color temperatures; and a lens group disposed on the first wafer; wherein The light emitted by the first wafer forms an elliptical shape through a lens group in a target area. The illuminating diode device of claim 9, further comprising: a second wafer having a plurality of second sub-regions emitting at least two color temperature lights; wherein the plurality of One of the two sub-regions corresponds to one of the first sub-regions and projects light to a same region. The illuminating diode device of claim 9, wherein the first sub-regions are arranged in an array. The illuminating diode device of claim 9, wherein the The center of the first sub-regions has a spacing region. The illuminating diode device of claim 12, wherein the first sub-regions are L-shaped to form the spacer region. The illuminating diode device of claim 9, further comprising: a shielding disposed at a center of the first sub-regions.