TWI527144B - Substrate processing apparatus - Google Patents

Substrate processing apparatus Download PDF

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TWI527144B
TWI527144B TW104101063A TW104101063A TWI527144B TW I527144 B TWI527144 B TW I527144B TW 104101063 A TW104101063 A TW 104101063A TW 104101063 A TW104101063 A TW 104101063A TW I527144 B TWI527144 B TW I527144B
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cup
chamber
exhaust port
exhaust
port
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TW104101063A
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TW201533830A (en
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中井仁司
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斯克林集團公司
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Priority claimed from JP2014006106A external-priority patent/JP6208021B2/en
Priority claimed from JP2014246815A external-priority patent/JP6434293B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Description

基板處理裝置 Substrate processing device

本發明係關於對基板進行處理之基板處理裝置。 The present invention relates to a substrate processing apparatus for processing a substrate.

習知以來，於半導體基板(以下有時簡稱為「基板」)之製造步驟中，係利用對旋轉之基板供給處理液而進行各種處理的基板處理裝置。此種基板處理裝置中，有時在基板周圍設置用於承接因離心力而由基板飛散之處理液等的杯部。 Conventionally, in the manufacturing process of a semiconductor substrate (hereinafter sometimes simply referred to as "substrate"), a substrate processing apparatus that performs various processes by supplying a processing liquid to a rotating substrate is used. In such a substrate processing apparatus, a cup portion for receiving a processing liquid or the like scattered by the substrate due to centrifugal force may be provided around the substrate.

日本專利特開2010-10554號公報(文獻1)係關於一種對基板依序供給複數種處理液而進行處理的旋轉裝置。該旋轉處理裝置中，在保持基板之旋轉台周圍設有杯體。於旋轉台與杯體之間設有處理液承接體，藉由使處理液承接體升降，而切換處理液承接體之側面下部所連接的流路。該旋轉處理裝置中，係視由處理液承接體所承接之處理液的各種種類而切換流路，將複數種處理液分別回收。又，杯體內之環境氣體係經由設於杯體側面之共通的排氣管所排氣。 Japanese Laid-Open Patent Publication No. 2010-10554 (Document 1) relates to a rotary device that processes a plurality of kinds of processing liquids in sequence on a substrate. In the rotation processing apparatus, a cup body is provided around a rotating table holding the substrate. A treatment liquid receiving body is provided between the rotary table and the cup body, and the flow path connected to the lower portion of the side surface of the treatment liquid receiving body is switched by raising and lowering the treatment liquid receiving body. In the rotation processing apparatus, the flow path is switched depending on various types of the treatment liquid received by the treatment liquid receiving body, and a plurality of types of treatment liquids are separately collected. Further, the ambient gas system in the cup is vented through a common exhaust pipe provided on the side of the cup.

日本專利特開2011-204933號公報(文獻2)之基板處理裝置中，係於處理室內部，在旋轉夾具周圍設置杯部。於杯之底部，設有用於將杯內環境氣體與由基板被甩除之純水等處理液一起排出的排氣液溝。排氣及排液係由排氣液溝導入至處理室之外部之氣液分離器，經分離之排氣被導入至排氣切換器。排氣切換器係於 3根個別之排氣管之間切換排氣之流通目的地。 In the substrate processing apparatus of Japanese Laid-Open Patent Publication No. 2011-204933 (Document 2), the inside of the processing chamber is provided, and a cup portion is provided around the rotating jig. At the bottom of the cup, there is provided a venting groove for discharging the ambient gas in the cup together with the treatment liquid such as pure water removed from the substrate. The exhaust gas and the liquid discharge are introduced into the gas-liquid separator outside the processing chamber by the exhaust liquid groove, and the separated exhaust gas is introduced into the exhaust gas switch. Exhaust switch is attached to The flow destination of the exhaust gas is switched between the three individual exhaust pipes.

日本專利特開2002-177856號公報(文獻3)之基板處 理裝置中的杯，係於基板邊緣更外側設置圓環狀之第1排液槽，於第1排液槽之周圍設置圓環狀之第2排液槽。於第1排液槽之底部設置排液口與排氣口，排氣口上方係由朝周方向傾斜之裙部所被覆。於第2排液槽之底部亦設有排液口與排氣口，排氣口之上方係由朝周方向傾斜之裙部所被覆。 Substrate of Japanese Patent Laid-Open Publication No. 2002-177856 (Document 3) The cup in the device is provided with an annular first draining groove on the outer side of the substrate edge, and an annular second draining groove is provided around the first draining groove. A drain port and an exhaust port are provided at the bottom of the first drain tank, and the top of the exhaust port is covered by a skirt that is inclined toward the circumferential direction. A drain port and an exhaust port are also provided at the bottom of the second drain tank, and the top of the exhaust port is covered by a skirt inclined toward the circumferential direction.

日本專利特開2013-207265號公報(文獻4)及日本專 利特開2013-207266號公報(文獻5)之基板處理裝置中，在杯之側面設置複數排出口。複數排出口係藉由開關裝置而分別獨立進行開關。於各排出口，係連接著未連接至其他排出口之氣液分離裝置及排氣裝置，由氣液分離裝置所排出之處理液被導入至回收裝置或排液裝置。 Japanese Patent Laid-Open No. 2013-207265 (Document 4) and Japan In the substrate processing apparatus of Japanese Laid-Open Patent Publication No. 2013-207266 (Document 5), a plurality of discharge ports are provided on the side surface of the cup. The plurality of discharge ports are independently switched by the switching device. At each discharge port, a gas-liquid separation device and an exhaust device that are not connected to other discharge ports are connected, and the treatment liquid discharged from the gas-liquid separation device is introduced into a recovery device or a liquid discharge device.

然而，文獻1之旋轉處理裝置中，即使改變使用於基 板處理的處理液種類，用於排出杯體內之環境氣體的排氣管並未切換。文獻2之基板處理裝置中，雖可配合處理液種類等而切換排氣管，但由於排氣切換器設於處理室外部，故有基板處理裝置大型化的可能性。又，複數種類之處理液及排氣由於藉由共通配管被導入至處理室外部，故與殘留於配管等之其他處理液混合，而有發生混蝕或處理液之回收率降低之虞。 However, in the rotation processing apparatus of Document 1, even if it is changed for use in the base The type of treatment liquid used for the plate treatment, and the exhaust pipe for discharging the ambient gas in the cup body are not switched. In the substrate processing apparatus of the document 2, the exhaust pipe can be switched in accordance with the type of the processing liquid, etc. However, since the exhaust gas exchanger is provided outside the processing chamber, the substrate processing apparatus may be enlarged. Further, since a plurality of kinds of the treatment liquid and the exhaust gas are introduced into the outside of the treatment chamber by the common piping, they are mixed with other treatment liquids remaining in the piping or the like, and the occurrence of the corrosion or the recovery rate of the treatment liquid is lowered.

文獻3中，雖可配合處理液之種類等，切換由第1排 液槽所進行之排液及排氣、與由第2排液槽所進行之排液及排氣，但由於必須將對應至處理液種類之複數排液槽依同心圓狀設置於基板外側，故有基板處理裝置大型化的可能性。文獻4及文獻5之 基板處理裝置中，由於在杯之複數排出口分別設置與其他排出口獨立地驅動的開關裝置，故有關排氣及排液之切換的構造及其控制變得複雜化，且有裝置大型化的可能性。 In Document 3, although it can be matched with the type of the treatment liquid, etc., switching is performed by the first row. The liquid discharge and the exhaust of the liquid tank and the liquid discharge and the exhaust by the second drain tank, but it is necessary to arrange the plurality of liquid discharge tanks corresponding to the type of the treatment liquid on the outer side of the substrate in a concentric manner. Therefore, there is a possibility that the substrate processing apparatus is enlarged. Document 4 and Document 5 In the substrate processing apparatus, since the switching device that is driven independently of the other discharge ports is provided at each of the plurality of discharge ports of the cup, the structure and control of switching between the exhaust gas and the liquid discharge are complicated, and the device is increased in size. possibility.

另外，上述般之基板處理裝置中，在要求來自排氣口 之排氣流量的調節的情況，係與切換排氣之構造分別地、另外將用以調節排氣流量之機構設於排氣管上，而有裝置構造複雜化且裝置大型化的可能性。 In addition, in the above-described substrate processing apparatus, the request is from the exhaust port. In the case where the exhaust gas flow rate is adjusted, a mechanism for adjusting the exhaust gas flow rate is separately provided on the exhaust pipe, and the device structure is complicated and the device is increased in size.

本發明係用於對基板進行處理之基板處理裝置，以容易切換排氣機構為目的。又，亦以容易變更排氣流量為目的。 The present invention is a substrate processing apparatus for processing a substrate, for the purpose of easily switching the exhaust mechanism. Moreover, it is also aimed at easily changing the exhaust gas flow rate.

本發明係關於一種基板處理裝置，其具備：依水平狀態保持基板之基板保持部；於上述基板上供給處理液之處理液供給部；設有杯排氣埠，承接來自上述基板之處理液的杯部；於內部收容上述基板保持部及上述杯部之腔室；以朝上下方向之中心軸為中心，使上述杯部進行旋轉的杯旋轉機構；與藉上述杯旋轉機構使上述杯部旋轉，決定上述杯排氣埠於以上述中心軸為中心之周方向之位置的控制部；於上述腔室，設置於上述周方向排列的第1腔室排氣埠及第2腔室排氣埠；上述控制部係藉由控制上述杯旋轉機構，使上述杯排氣埠選擇性地重疊於上述第1腔室排氣埠或上述第2腔室排氣埠；依上述杯排氣埠重疊於上述第1腔室排氣埠之狀態，藉由連接於上述第1腔室排氣埠之第1排氣機構，使上述杯部內之氣體經由上述杯排氣埠及上述第1腔室排氣埠而排出至上述腔室外；依上述杯排氣埠重疊於上述第2腔室排氣埠之狀態，藉由連接於上述第2腔室排氣埠之第2排氣機構，使上述杯部內之氣體經由上述 杯排氣埠及上述第2腔室排氣埠而排出至上述腔室外。藉此，可容易切換排氣機構。 The present invention relates to a substrate processing apparatus including: a substrate holding portion that holds a substrate in a horizontal state; a processing liquid supply portion that supplies a processing liquid on the substrate; and a cup exhaust port that receives a processing liquid from the substrate a cup portion; a chamber for accommodating the substrate holding portion and the cup portion therein; a cup rotating mechanism for rotating the cup portion around a central axis of the vertical direction; and rotating the cup portion by the cup rotating mechanism a control unit that determines a position of the cup exhaust gas in a circumferential direction around the central axis; and a first chamber exhaust port and a second chamber exhaust port that are arranged in the circumferential direction in the chamber The control unit selectively controls the cup rotating mechanism to superimpose the cup exhaust port on the first chamber exhaust port or the second chamber exhaust port; and the cup exhaust port overlaps with the cup exhaust port The state of the first chamber exhaust port is such that the gas in the cup portion is exhausted through the cup exhaust port and the first chamber by a first exhaust mechanism connected to the first chamber exhaust port Exhausted to the above Outdoor; cup according to the above exhaust port to the overlapping state of the second exhaust port of the chamber, by connecting the second chamber to the exhaust port of the second exhaust means, the gas within said cup portion via the The cup exhaust port and the second chamber exhaust port are discharged to the outside of the chamber. Thereby, the exhaust mechanism can be easily switched.

本發明之一較佳實施形態，上述杯排氣埠設於上述杯 部底部，上述第1腔室排氣埠及上述第2腔室排氣埠設於上述腔室底部。 In a preferred embodiment of the present invention, the cup exhausting device is disposed on the cup At the bottom of the portion, the first chamber exhaust port and the second chamber exhaust port are disposed at the bottom of the chamber.

本發明之其他較佳實施形態，上述杯部係以上述中心 軸為中心之環狀，上述杯部具備：圓環狀底部；由上述底部之內周部朝上方擴展之圓筒狀之內側壁部；與由上述底部之外周部朝上方擴展之圓筒狀之外側壁部；於上述內側壁部或上述外側壁部設置上述杯排氣埠，於與上述杯部之上述內側壁部或上述外側壁部相對向的上述腔室之側壁部，設置上述第1腔室排氣埠及上述第2腔室排氣埠。 In another preferred embodiment of the present invention, the cup portion is centered on the center The cup has a ring-shaped center, and the cup portion includes an annular bottom portion, a cylindrical inner wall portion that expands upward from an inner peripheral portion of the bottom portion, and a cylindrical shape that extends upward from a peripheral portion of the bottom portion The outer wall portion; the cup exhaust port is disposed on the inner side wall portion or the outer side wall portion, and the side wall portion of the chamber facing the inner side wall portion or the outer side wall portion of the cup portion is provided 1 chamber exhaust port and the second chamber exhaust port described above.

本發明之其他較佳實施形態，於上述杯部之上述底部 設置杯排液埠；於上述腔室之上述底部，設置於上述周方向排列之第1腔室排液埠及第2腔室排液埠；依上述杯排氣埠重疊於上述第1腔室排氣埠之狀態，上述杯排液埠與上述第1腔室排液埠重疊，使上述杯部內之處理液排出至連接於上述第1腔室排液埠之上述腔室外的第1排液部；依上述杯排氣埠重疊於上述第2腔室排氣埠之狀態，上述杯排液埠與上述第2腔室排液埠重疊，使上述杯部內之處理液排出至連接於上述第2腔室排液埠之上述腔室外的第2排液部。 Another preferred embodiment of the present invention is at the bottom of the cup portion Providing a cup draining liquid; at the bottom of the chamber, a first chamber discharge port arranged in the circumferential direction and a second chamber drain port; and the first chamber is overlapped by the cup exhaust port In the state of the exhaust port, the cup draining liquid overlaps with the first chamber draining port, and the processing liquid in the cup portion is discharged to the first draining liquid connected to the chamber outside the first chamber draining port a portion in which the cup drain 埠 overlaps with the second chamber drain , in a state in which the cup exhaust port overlaps the second chamber exhaust port, and the processing liquid in the cup portion is discharged to be connected to the first portion 2 chamber draining the second drain portion outside the chamber.

更佳係於上述腔室之上述底部，設置另一個第1腔室 排液埠，其係與上述第1腔室排液埠及上述第2腔室排液埠一起排列於上述周方向，並連接上述第1排液部；依上述杯排液埠重疊於 上述另一個第1腔室排液埠之狀態，使上述杯部內之處理液排出至上述第1排液部；上述杯排氣埠係位於由上述第1腔室排氣埠及上述第2腔室排氣埠於上述周方向呈離間的位置。 More preferably at the bottom of the chamber, another first chamber is provided a liquid discharge port arranged in the circumferential direction together with the first chamber drain port and the second chamber drain port, and connected to the first drain portion; The other first chamber discharges the liquid to discharge the processing liquid in the cup to the first liquid discharge unit; the cup exhaust system is located in the first chamber exhaust port and the second chamber The chamber exhaust is in a position spaced apart from the circumferential direction.

或者更佳係上述腔室排液埠之上述周方向之長度較 上述杯排液埠之上述周方向之長度長；由上述杯排液埠重疊於上述第1腔室排液埠、上述杯排氣埠重疊於上述第1腔室排氣埠之狀態，一邊維持上述杯排液埠與上述第1腔室排液埠的重複，一邊旋轉上述杯部，藉此使上述杯排氣埠移動至由上述第1腔室排氣埠偏離的位置。 Or more preferably, the length of the above-mentioned circumferential direction of the above-mentioned chamber discharge enthalpy The length of the cup draining liquid in the circumferential direction is long; and the cup draining liquid is superimposed on the first chamber discharge port, and the cup exhaust port is superimposed on the first chamber exhaust port while maintaining The cup discharge port overlaps with the first chamber discharge port, and the cup portion is rotated to move the cup exhaust port to a position deviated from the first chamber exhaust port.

本發明之其他較佳實施形態，上述杯部係以上述中心 軸為中心之環狀；上述杯部具備：圓環狀之上述底部；由上述底部之內周部朝上方擴展之圓筒狀之內側壁部；與由上述底部之外周部朝上方擴展之圓筒狀之外側壁部；於上述內側壁部或上述外側壁部之間由上述底部朝上方擴展之圓筒狀之間隔壁；來自上述處理液供給部之處理液係流入至上述杯部之上述外側壁部與上述間隔壁之間的空間；上述杯排液埠係位於較上述間隔壁更靠以上述中心軸為中心之徑方向外側；上述杯排氣埠係位於較上述間隔壁更靠上述徑方向內側。 In another preferred embodiment of the present invention, the cup portion is centered on the center The cup has a ring-shaped inner ring; the cup portion includes: an annular inner bottom portion; a cylindrical inner side wall portion that expands upward from an inner peripheral portion of the bottom portion; and a circle that expands upward from a peripheral portion of the bottom portion a cylindrical outer wall portion; a cylindrical partition wall extending upward from the bottom portion between the inner side wall portion or the outer side wall portion; and the processing liquid from the processing liquid supply portion flowing into the cup portion a space between the outer wall portion and the partition wall; the cup draining liquid is located on a radially outer side of the partition wall centering on the central axis; and the cup exhausting raft is located above the partition wall The inside of the radial direction.

更佳係進一步具備使上述基板保持部相對於上述杯 部於上下方向相對移動的升降機構；上述杯部係進一步具備於上述間隔壁與上述外側壁部之間由上述底部朝上方擴展的筒狀之另一個間隔壁；上述杯排液埠係位於較上述另一個間隔壁更靠上述徑方向內側；於上述杯部之上述底部，設置有位於較上述另一個間隔壁更靠上述徑方向外側的其他杯排液埠；於上述腔室之上述底部，設 置其他腔室排液埠，其係位於較上述第1腔室排液埠及上述第2腔室排液埠更靠上述徑方向外側，並連接其他排液部；藉由上述升降機構，使上述基板在相對於上述杯部之第1位置與較上述第1位置更上方之第2位置之間，與上述基板保持部一起移動；依上述基板位於上述第1位置之狀態，由上述處理液供給部供給至上述基板上之處理液，流入至上述杯部之上述另一個間隔壁與上述間隔壁之間的空間；依上述基板位於上述第2位置之狀態，由上述處理液供給部供給至上述基板上之處理液，流入至上述杯部之上述外側壁與上述另一個間隔壁之間的空間；上述其他杯排液埠重疊至上述其他腔室排液埠，使處理液排出至上述腔室外之上述其他排液部。 More preferably, the substrate holding portion is further provided with respect to the cup a lifting mechanism that moves in a vertical direction; the cup portion further includes a tubular another partition wall that extends upward from the bottom portion between the partition wall and the outer side wall portion; The other partition wall is further located on the inner side in the radial direction; and the other bottom of the cup portion is provided with other cup draining liquids located outside the radial direction of the other partition wall; at the bottom of the chamber, Assume The other chamber draining liquid is disposed on the outer side of the radial direction than the liquid discharge port of the first chamber and the liquid discharge port of the second chamber, and is connected to the other liquid discharge portion; The substrate moves together with the substrate holding portion between a first position above the cup portion and a second position higher than the first position; and the processing liquid is in a state in which the substrate is located at the first position The processing liquid supplied to the substrate by the supply unit flows into a space between the other partition wall of the cup portion and the partition wall, and is supplied to the processing liquid supply unit in a state where the substrate is located at the second position. The treatment liquid on the substrate flows into a space between the outer side wall of the cup portion and the other partition wall; the other cup discharge liquid is overlapped with the other chamber discharge port, and the treatment liquid is discharged to the chamber The other drainage parts mentioned above.

本發明之其他較佳實施形態，上述基板保持部係具備 以上述中心軸為中心之圓板狀之保持部本體；上述保持部本體係設置：於上述杯部之上方與上述杯部在上下方向呈相對向，由上述保持部本體之下面朝下方突出且包圍上述中心軸周圍的環狀之突出部。 According to still another preferred embodiment of the present invention, the substrate holding portion is provided a disk-shaped holding portion body centered on the central axis; the holding portion of the holding portion is disposed above the cup portion in a vertical direction with the cup portion, and protrudes downward from a lower surface of the holding portion body An annular projection surrounding the central axis.

本發明之其他之基板處理裝置，係具備：依水平狀態 保持基板之基板保持部；於上述基板上供給處理液之處理液供給部；於底部設有杯排氣埠，承接來自上述基板之處理液的杯部；於內部收容上述基板保持部及上述杯部，且於底部設置腔室排氣埠的腔室；以朝上下方向之中心軸為中心，使上述杯部進行旋轉的杯旋轉機構；與藉上述杯旋轉機構使上述杯部旋轉，決定上述杯排氣埠於以上述中心軸為中心之周方向之位置的控制部；依上述杯排氣埠重疊於上述腔室排氣埠之狀態，藉由連接於上述腔室排氣埠之排氣機構，使上述杯部內之氣體經由上述杯排氣埠及上述腔室排氣埠而 排出至上述腔室外；藉由上述控制部控制上述杯旋轉機構，變更上述杯排氣埠與上述腔室排氣埠的重複面積，藉此使由上述排氣機構所進行之來自上述腔室的排氣流量變更。藉此，可容易切換排氣流量。 Another substrate processing apparatus of the present invention is provided with: a horizontal state a substrate holding portion for holding a substrate; a processing liquid supply portion for supplying a processing liquid on the substrate; a cup exhaust port at a bottom portion, a cup portion for receiving a processing liquid from the substrate; and the substrate holding portion and the cup being housed inside a chamber having a chamber exhaust port at the bottom; a cup rotating mechanism for rotating the cup portion around a central axis of the vertical direction; and rotating the cup portion by the cup rotating mechanism to determine the above a control unit that is disposed at a position in a circumferential direction around the central axis; and a state in which the cup exhaust port is superposed on the chamber exhaust port, and is exhausted to the exhaust port of the chamber a mechanism for causing gas in the cup portion to pass through the cup exhaust port and the chamber exhaust port Exhausting to the outside of the chamber; controlling the cup rotating mechanism by the control unit to change a repeating area of the cup exhaust port and the chamber exhaust port, thereby causing the chamber from the chamber by the exhaust mechanism The exhaust flow rate is changed. Thereby, the exhaust gas flow rate can be easily switched.

本發明之一較佳實施形態，上述腔室排氣埠係具備： 大腔室排氣埠；及小腔室排氣埠，係與上述大腔室排氣埠一起排列於上述周方向，面積較小於上述大腔室排氣埠；上述杯排氣埠與上述腔室排氣埠之重複面積的變更，係使上述杯排氣埠選擇性地重疊於上述大腔室排氣埠或上述小腔室排氣埠。 In a preferred embodiment of the present invention, the chamber exhaust system has: a large chamber exhaust port; and a small chamber exhaust port arranged in the circumferential direction together with the large chamber exhaust port, the area being smaller than the large chamber exhaust port; the cup exhaust port and the above The change in the repeating area of the chamber exhaust port is such that the cup exhaust port selectively overlaps the large chamber exhaust port or the small chamber exhaust port.

本發明之其他較佳實施形態，上述杯排氣埠係具備： 大杯排氣埠；及小杯排氣埠，係與上述大杯排氣埠一起排列於上述周方向，面積較上述大杯排氣埠；上述杯排氣埠與上述腔室排氣埠之重複面積的變更，係使上述大杯排氣埠或上述小杯排氣埠選擇性地重疊於上述腔室排氣埠。 According to another preferred embodiment of the present invention, the cup exhaust system has: a large cup of exhaust gas; and a small cup of exhaust gas, arranged in the circumferential direction together with the large cup of exhaust gas, the area is larger than the large cup of exhaust gas; the cup exhausting gas and the chamber exhausting The change in the repeating area is such that the large cup exhaust port or the small cup exhaust port selectively overlaps the chamber exhaust port.

本發明之其他較佳實施形態，上述杯排氣埠與上述腔 室排氣埠之重複面積的變更，係藉由一邊維持上述杯排氣埠與上述腔室排氣埠之重複、一邊使上述杯部旋轉而實現。 According to another preferred embodiment of the present invention, the cup exhausting raft and the cavity are The change in the repeating area of the chamber exhaust port is achieved by rotating the cup portion while maintaining the overlap of the cup exhaust port and the chamber exhaust port.

本發明之其他較佳實施形態，上述杯旋轉機構係具 備：配置於上述腔室內，安裝於上述杯部之環狀之轉子部；與於上述腔室外配置於上述轉子部周圍，於與上述轉子部之間產生旋轉力的定子部。 According to another preferred embodiment of the present invention, the cup rotating mechanism is provided A rotor portion that is disposed in the chamber and that is attached to the annular rotor portion of the cup portion, and a stator portion that is disposed around the rotor portion and that generates a rotational force between the rotor portion and the rotor portion.

本發明之其他較佳實施形態，上述轉子部係藉由於與 上述定子部之間作用的磁力，於上述腔室內依浮游狀態進行旋轉。 According to another preferred embodiment of the present invention, the rotor portion is caused by The magnetic force acting between the stator portions is rotated in the floating state in the chamber.

本發明之其他較佳實施形態，上述腔室係配置上述基 板保持部及上述杯部、且形成密閉空間的密閉空間形成部。 In another preferred embodiment of the present invention, the chamber is configured with the base The plate holding portion and the cup portion form a sealed space forming portion that forms a sealed space.

上述目的及其他目的、特徵、態樣及優點，係參照隨附圖式由以下進行之發明詳細說明所闡明。 The above and other objects, features, aspects and advantages of the invention will be apparent from

1、1a~1e‧‧‧基板處理裝置 1, 1a~1e‧‧‧ substrate processing device

4、4a~4d‧‧‧杯部 4, 4a~4d‧‧‧ Cup

5‧‧‧處理液供給部 5‧‧‧Processing liquid supply department

6(6b)‧‧‧殼體 6(6b)‧‧‧Shell

7‧‧‧杯旋轉機構 7‧‧‧ cup rotating mechanism

9‧‧‧基板 9‧‧‧Substrate

10‧‧‧控制部 10‧‧‧Control Department

21、21a~21d‧‧‧腔室 21, 21a~21d‧‧‧ chamber

22‧‧‧頂板 22‧‧‧ top board

23‧‧‧腔室開關機構 23‧‧‧Case Switching Mechanism

25‧‧‧腔室本體 25‧‧‧ chamber body

26‧‧‧腔室蓋部 26‧‧‧Cell cover

31‧‧‧基板保持部 31‧‧‧Substrate retention department

32‧‧‧基板旋轉機構 32‧‧‧Substrate rotation mechanism

33‧‧‧升降機構 33‧‧‧ Lifting mechanism

34‧‧‧突出部 34‧‧‧Protruding

41‧‧‧杯外側壁部 41‧‧‧ cup outer wall

42‧‧‧杯底部 42‧‧‧ cup bottom

43‧‧‧杯內側壁部 43‧‧‧ cup inner wall

44‧‧‧(第1)間隔壁 44‧‧‧(1) partition wall

45‧‧‧(外側)杯空間 45‧‧‧(outside) cup space

45a‧‧‧第1外側杯空間 45a‧‧‧1st outer cup space

45b‧‧‧第2外側杯空間 45b‧‧‧2nd outer cup space

46‧‧‧內側杯空間 46‧‧‧ inside cup space

47‧‧‧第2間隔壁 47‧‧‧2nd partition wall

48‧‧‧屋簷部 48‧‧‧ Housing Department

51‧‧‧上部噴嘴 51‧‧‧ upper nozzle

52‧‧‧下部噴嘴 52‧‧‧ Lower nozzle

61‧‧‧殼體底部 61‧‧‧Bottom of the casing

62‧‧‧殼體側壁部 62‧‧‧Shell side wall

63‧‧‧殼體蓋部 63‧‧‧Shell cover

64‧‧‧搬入口 64‧‧‧ Move in

65‧‧‧蓋部 65‧‧‧ Cover

71‧‧‧定子部 71‧‧‧ stator

72‧‧‧轉子部 72‧‧‧Rotor Department

91‧‧‧上面 91‧‧‧above

92‧‧‧下面 92‧‧‧ below

95a‧‧‧第1排氣機構 95a‧‧‧1st exhaust mechanism

95b‧‧‧第2排氣機構 95b‧‧‧2nd exhaust mechanism

95c‧‧‧第3排氣機構 95c‧‧‧3rd exhaust mechanism

95d‧‧‧第4排氣機構 95d‧‧‧4th exhaust mechanism

96a‧‧‧第1排液部 96a‧‧‧1st drain

96b‧‧‧第2排液部 96b‧‧‧2nd drainage department

96c‧‧‧第3排液部 96c‧‧‧3rd drainage department

96d‧‧‧第4排液部 96d‧‧‧4th drainage department

221‧‧‧被保持部 221‧‧‧ Keeped Department

222‧‧‧筒部 222‧‧‧ Tube

223‧‧‧凸緣部 223‧‧‧Flange

224‧‧‧板本體部 224‧‧‧ board body

225‧‧‧板側壁部 225‧‧‧Shelf side wall

226‧‧‧第2卡合部 226‧‧‧2nd engagement department

251‧‧‧腔室下面部 251‧‧‧ below the chamber

252‧‧‧腔室外側壁部 252‧‧‧outdoor side wall

254‧‧‧下面中央部 254‧‧‧Central Department below

255‧‧‧腔室內側壁部 255‧‧‧ interior wall

256‧‧‧腔室底部 256‧‧‧Bottom of the chamber

257‧‧‧導管內壁部 257‧‧‧Dress inner wall

261‧‧‧板保持部 261‧‧‧ Board Maintenance Department

262‧‧‧筒部 262‧‧‧ Tube

263‧‧‧凸緣部 263‧‧‧Flange

271‧‧‧(內)腔室排液埠 271‧‧‧(inner) chamber drain

271a‧‧‧腔室排液埠 271a‧‧‧ chamber drain

272、272a‧‧‧底部突出部 272, 272a‧‧‧ bottom protrusion

273‧‧‧外側凸部 273‧‧‧Outer convex

276a‧‧‧第1腔室排液埠群 276a‧‧‧1st chamber drainage group

276b‧‧‧第2腔室排液埠群 276b‧‧‧2nd chamber draining group

276c‧‧‧第3腔室排液埠群 276c‧‧‧3rd chamber draining group

277‧‧‧外腔室排液埠 277‧‧‧External chamber drainage

279‧‧‧外側凸部 279‧‧‧Outer convex

281‧‧‧(大)腔室排氣埠 281‧‧‧(large) chamber exhaust

281a‧‧‧重複區域 281a‧‧‧Repeating area

281b‧‧‧非重複區域 281b‧‧‧non-repeating area

282‧‧‧底部突出部 282‧‧‧Bottom protrusion

283‧‧‧內側凸部 283‧‧‧ inside convex part

284‧‧‧(小)腔室排氣埠 284‧‧‧(small) chamber exhaust

285‧‧‧底部突出部 285‧‧‧Bottom protrusion

285a‧‧‧上端面 285a‧‧‧ upper end

286a‧‧‧第1腔室排氣埠群 286a‧‧‧1st chamber exhaust manifold

286b‧‧‧第2腔室排氣埠群 286b‧‧‧2nd chamber exhaust manifold

286c‧‧‧第3腔室排氣埠群 286c‧‧‧3rd chamber exhaust manifold

287a‧‧‧第1導管 287a‧‧‧1st catheter

287b‧‧‧第2導管 287b‧‧‧2nd catheter

287c‧‧‧第3導管 287c‧‧‧3rd catheter

311‧‧‧基底部 311‧‧‧ base

312‧‧‧夾具 312‧‧‧Clamp

314‧‧‧第1卡合部 314‧‧‧1st engagement

321‧‧‧旋轉軸 321‧‧‧Rotary axis

451‧‧‧(內)杯排液埠 451‧‧‧(内) cup draining machine

452‧‧‧底部突出部 452‧‧‧Bottom protrusion

453‧‧‧外側凸部 453‧‧‧Outer convex

457‧‧‧外杯排液埠 457‧‧‧Outer cup draining machine

461‧‧‧(大)杯排氣埠 461‧‧‧(large) cup exhaust 埠

461a‧‧‧重複區域 461a‧‧‧Repeated area

461b‧‧‧非重複區域 461b‧‧‧non-repeating area

462、462a、465‧‧‧底部突出部 462, 462a, 465‧‧‧ bottom protrusion

462b、465a‧‧‧下端面 462b, 465a‧‧‧ lower end

463‧‧‧內側凸部 463‧‧‧Inside convex

464‧‧‧小杯排氣埠 464‧‧‧ small cup exhaust 埠

J1‧‧‧中心軸 J1‧‧‧ central axis

S11~S22‧‧‧步驟 S11~S22‧‧‧Steps

圖1為第1實施形態之基板處理裝置的剖面圖。 Fig. 1 is a cross-sectional view showing a substrate processing apparatus according to a first embodiment.

圖2為基板處理裝置之剖面圖。 2 is a cross-sectional view of a substrate processing apparatus.

圖3為杯部之底面圖。 Figure 3 is a bottom view of the cup portion.

圖4為腔室下面部之俯視圖。 Figure 4 is a plan view of the lower portion of the chamber.

圖5為表示基板處理流程的圖。 Fig. 5 is a view showing a processing flow of a substrate.

圖6為基板處理裝置之剖面圖。 Figure 6 is a cross-sectional view of the substrate processing apparatus.

圖7為基板處理裝置之剖面圖。 Figure 7 is a cross-sectional view of a substrate processing apparatus.

圖8為基板處理裝置之剖面圖。 Figure 8 is a cross-sectional view of a substrate processing apparatus.

圖9為表示基板處理裝置之一部分的放大剖面圖。 Fig. 9 is an enlarged cross-sectional view showing a part of a substrate processing apparatus.

圖10為表示杯排氣埠附近之俯視圖。 Fig. 10 is a plan view showing the vicinity of the cup exhaust port.

圖11為基板處理裝置之剖面圖。 Figure 11 is a cross-sectional view of the substrate processing apparatus.

圖12為杯部之仰視圖。 Figure 12 is a bottom view of the cup portion.

圖13為腔室下面部之俯視圖。 Figure 13 is a plan view of the lower portion of the chamber.

圖14為第2實施形態之基板處理裝置之剖面圖。 Figure 14 is a cross-sectional view showing a substrate processing apparatus according to a second embodiment.

圖15與杯部之仰視圖。 Figure 15 is a bottom view of the cup.

圖16為腔室下面部之俯視圖。 Figure 16 is a plan view of the lower portion of the chamber.

圖17為基板處理裝置之剖面圖。 Figure 17 is a cross-sectional view showing a substrate processing apparatus.

圖18為腔室下面部之俯視圖。 Figure 18 is a plan view of the lower portion of the chamber.

圖19為第3實施形態之基板處理裝置之杯部的仰視圖。 Fig. 19 is a bottom view of the cup portion of the substrate processing apparatus of the third embodiment.

圖20為腔室下面部之俯視圖。 Figure 20 is a plan view of the lower portion of the chamber.

圖21為基板處理裝置之剖面圖。 Figure 21 is a cross-sectional view of the substrate processing apparatus.

圖22為表示基板處理裝置之一部分的放大剖面圖。 Fig. 22 is an enlarged cross-sectional view showing a part of the substrate processing apparatus.

圖23為第4實施形態之基板處理裝置的剖面圖。 Figure 23 is a cross-sectional view showing a substrate processing apparatus according to a fourth embodiment.

圖24為第5實施形態之基板處理裝置的剖面圖。 Figure 24 is a cross-sectional view showing a substrate processing apparatus according to a fifth embodiment.

圖25為腔室及杯部之橫剖面圖。 Figure 25 is a cross-sectional view of the chamber and cup.

圖26為腔室下面部之俯視圖。 Figure 26 is a plan view of the lower portion of the chamber.

圖27為基板處理裝置之剖面圖。 Figure 27 is a cross-sectional view of the substrate processing apparatus.

圖1為表示本發明第1實施形態之基板處理裝置1的剖面圖。基板處理裝置1係對略圓板狀之半導體基板9(以下有時簡稱為「基板9」)供給處理液而依單片處理基板9的單片式裝置。基板處理裝置1中，係利用純水、酸性藥液、鹼性藥液等作為處理液，進行基板9之洗淨處理或其他各種處理。圖1中，於基板處理裝置1之一部分構成的剖面，省略了平行斜線之加註(其他剖面圖中亦相同)。 1 is a cross-sectional view showing a substrate processing apparatus 1 according to a first embodiment of the present invention. The substrate processing apparatus 1 is a one-chip apparatus in which a processing liquid is supplied to a semiconductor board 9 having a substantially disk shape (hereinafter sometimes simply referred to as "substrate 9"), and the substrate 9 is processed by a single sheet. In the substrate processing apparatus 1, pure water, an acidic chemical liquid, an alkaline chemical liquid, or the like is used as a processing liquid, and the substrate 9 is washed or treated in various other treatments. In Fig. 1, the cross section of one portion of the substrate processing apparatus 1 is omitted, and the parallel oblique line is omitted (the same applies to other cross-sectional views).

基板處理裝置1中，具備腔室21、頂板22、腔室開關機構23、基板保持部31、基板旋轉機構32、杯部4、杯旋轉機構7、處理液供給部5、殼體6、與控制部10。又，圖2之後，省略控制部10之圖示。 The substrate processing apparatus 1 includes a chamber 21, a top plate 22, a chamber switching mechanism 23, a substrate holding portion 31, a substrate rotating mechanism 32, a cup portion 4, a cup rotating mechanism 7, a processing liquid supply portion 5, a housing 6, and Control unit 10. In addition, after FIG. 2, illustration of the control part 10 is abbreviate|omitted.

於殼體6之內部，收容腔室21、頂板22、腔室開關機構23、基板保持部31、基板旋轉機構32、杯部4、與處理液供給部5。殼體6具備殼體底部61、殼體側壁部62、與殼體蓋部63。屬於殼體6之底部的殼體底部61，係由下方支撐腔室21等。殼體 側壁部62係包圍腔室21等之周圍。殼體天蓋部63係覆蓋腔室21等之上方。於殼體側壁部62周圍，設有用於將基板9搬入殼體6內之搬入口64。搬入口64係由可上下方向移動之蓋部65所閉塞。 Inside the casing 6, the chamber 21, the top plate 22, the chamber switching mechanism 23, the substrate holding portion 31, the substrate rotating mechanism 32, the cup portion 4, and the processing liquid supply portion 5 are housed. The casing 6 includes a casing bottom 61, a casing side wall portion 62, and a casing cover portion 63. The bottom 61 of the casing belonging to the bottom of the casing 6 supports the chamber 21 and the like from below. case The side wall portion 62 surrounds the periphery of the chamber 21 or the like. The casing cover portion 63 covers the upper portion of the chamber 21 or the like. A transfer port 64 for carrying the substrate 9 into the casing 6 is provided around the casing side wall portion 62. The carry-in port 64 is closed by a lid portion 65 that is movable in the vertical direction.

腔室21係具備腔室本體25、與腔室蓋部26。腔室 21係以朝上下方向之中心軸J1為中心的略圓筒狀。腔室本體25具備腔室下面部251、與腔室外側壁部252。腔室下面部251具備下面中央部254、腔室內側壁部255、腔室底部256。下面中央部254係以中心軸J1為中心的略圓環板狀。腔室內側壁部255係以中心軸J1為中心之略圓筒狀，由下面中央部254之外緣部朝下方擴展。 腔室底部256係以中心軸J1為中心之略圓環板狀，由腔室內側壁部255之下端，朝以中心軸J1為中心之徑方向(以下有時簡稱為「徑方向」)外方擴展。腔室外側壁部252係以中心軸J1為中心之略圓筒狀。腔室外側壁部252係由腔室下面部251之外緣部朝上方突出。腔室外側壁部252及腔室內側壁部255為腔室21之側壁部，腔室底部256為腔室21之底部。 The chamber 21 includes a chamber body 25 and a chamber cover portion 26. Chamber The 21 series has a substantially cylindrical shape centering on the central axis J1 in the up and down direction. The chamber body 25 includes a chamber lower surface portion 251 and a chamber outer wall portion 252. The chamber lower surface portion 251 includes a lower central portion 254, a chamber inner wall portion 255, and a chamber bottom portion 256. The lower central portion 254 is a substantially annular plate shape centering on the central axis J1. The inner wall portion 255 of the chamber has a substantially cylindrical shape centering on the central axis J1, and extends downward from the outer edge portion of the lower central portion 254. The bottom portion 256 of the chamber is a substantially annular plate shape centering on the central axis J1, and is located outward in the radial direction of the central axis J1 (hereinafter sometimes referred to as "diameter direction"). Expansion. The chamber outdoor side wall portion 252 has a substantially cylindrical shape centering on the central axis J1. The chamber outdoor side wall portion 252 protrudes upward from the outer edge portion of the chamber lower surface portion 251. The chamber outer wall portion 252 and the chamber inner wall portion 255 are the side wall portions of the chamber 21, and the chamber bottom portion 256 is the bottom portion of the chamber 21.

腔室蓋部26係垂直於中心軸J1之略圓環板狀。腔室 蓋部26之外緣部下端係與腔室外側壁部252之上部相接，藉此閉塞腔室本體25之上部開口。藉由使腔室蓋部26閉蓋腔室本體25之上部開口，而於腔室21內形成密閉空間之腔室空間。換言之，腔室21係形成腔室空間之密閉空間形成部。於屬於腔室21內部之腔室空間，收容基板保持部31、頂板22及杯部4。 The chamber cover portion 26 has a substantially annular plate shape perpendicular to the central axis J1. Chamber The lower end of the outer edge portion of the lid portion 26 is in contact with the upper portion of the outer wall portion 252 of the chamber, thereby closing the upper portion of the chamber body 25 to open. The chamber space of the closed space is formed in the chamber 21 by closing the chamber cover portion 26 to open the upper portion of the chamber body 25. In other words, the chamber 21 forms a closed space forming portion of the chamber space. The substrate holding portion 31, the top plate 22, and the cup portion 4 are housed in a chamber space belonging to the inside of the chamber 21.

腔室開關機構23係使腔室21之屬於可動部的腔室蓋 部26，相對於腔室21之其他部位的腔室本體25於上下方向相對移動。腔室開關機構23係使腔室蓋部26升降的蓋部升降機構。在藉 由腔室開關機構23使腔室蓋部26於上下方向移動時，頂板22依垂吊於腔室蓋部之狀態而與腔室蓋部26一起於上下方向移動。藉由腔室開關機構23，腔室蓋部26及頂板22係由圖1所示位置上升至圖2所示位置，而使腔室21開放。以下說明中，將圖1所示之腔室蓋部26及頂板22之位置稱為「處理位置」。又，將圖2所示之腔室蓋部26及頂板22之位置稱為「退避位置」。其後將詳述，圖2中殼體6相對於杯部4之相對性移向(亦即，以中心軸J1為中心之周方向上的相對性移向)，係與圖1相異。 The chamber switching mechanism 23 is a chamber cover of the chamber 21 belonging to the movable portion The portion 26 is relatively moved in the vertical direction with respect to the chamber body 25 at other portions of the chamber 21. The chamber switching mechanism 23 is a lid elevating mechanism that elevates and lowers the chamber lid portion 26. Borrowing When the chamber cover portion 26 is moved in the vertical direction by the chamber switching mechanism 23, the top plate 22 moves in the vertical direction together with the chamber cover portion 26 while being suspended from the chamber cover portion. By the chamber switching mechanism 23, the chamber cover portion 26 and the top plate 22 are raised from the position shown in Fig. 1 to the position shown in Fig. 2, and the chamber 21 is opened. In the following description, the positions of the chamber cover portion 26 and the top plate 22 shown in Fig. 1 will be referred to as "processing positions". Further, the position of the chamber cover portion 26 and the top plate 22 shown in Fig. 2 is referred to as a "retraction position". Hereinafter, the relative orientation of the casing 6 with respect to the cup portion 4 in Fig. 2 (i.e., the relative orientation in the circumferential direction centered on the central axis J1) will be different from that of Fig. 1.

圖1所示之頂板22，係以中心軸J1為中心之略圓環 板狀，於中央具有開口。頂板22具備板本體部224、板側壁部225、被保持部221。板本體部224係以中心軸J1為中心之略圓環板狀。 於板本體部224之中央部設有略圓形之開口，於該開口周圍設置被保持部221。板本體部224係配置於腔室蓋部26下方、且基板保持部31及基板9之上方。板本體部224之上面及下面係於徑方向上隨著遠離中心軸J1而朝下方傾斜的傾斜面。板本體部224之下面係與由基板保持部31所保持之基板9之上面91於上下方向呈相對向。 The top plate 22 shown in Fig. 1 is a slightly ring centered on the central axis J1. It has a plate shape and has an opening in the center. The top plate 22 includes a plate body portion 224 , a plate side wall portion 225 , and a held portion 221 . The plate main body portion 224 has a substantially annular plate shape centering on the central axis J1. A slightly circular opening is provided in a central portion of the plate body portion 224, and a held portion 221 is provided around the opening. The board main body portion 224 is disposed below the chamber cover portion 26 and above the substrate holding portion 31 and the substrate 9. The upper surface and the lower surface of the plate main body portion 224 are inclined surfaces that are inclined downward in the radial direction as moving away from the central axis J1. The lower surface of the plate main body portion 224 is opposed to the upper surface 91 of the substrate 9 held by the substrate holding portion 31 in the vertical direction.

板側壁部225係由板本體部224之外緣部，朝徑方向 外方依斜下方擴展。換言之，板側壁部225係由板本體部224之外緣部朝板本體部224之下面側突出，於徑方向隨著遠離中心軸J1而朝向下方。板側壁部225係以中心軸J1為中心之略圓筒狀。板側壁部225配置於基板9之徑方向外側，包圍基板9之周圍。板側壁部225之下端係於上下方向位於與基板保持部31之基底部311(後述)略相同的位置。 The plate side wall portion 225 is formed by the outer edge portion of the plate body portion 224 in the radial direction The foreign side expands obliquely below. In other words, the plate side wall portion 225 protrudes from the outer edge portion of the plate main body portion 224 toward the lower surface side of the plate main body portion 224, and faces downward in the radial direction away from the central axis J1. The plate side wall portion 225 has a substantially cylindrical shape centering on the central axis J1. The board side wall portion 225 is disposed on the outer side in the radial direction of the substrate 9 and surrounds the periphery of the substrate 9. The lower end of the plate side wall portion 225 is located at the same position as the base portion 311 (described later) of the substrate holding portion 31 in the vertical direction.

板本體部224之直徑係較大於基板9之直徑。板側壁部225之下端的直徑係較大於基板保持部31之基底部311之直徑。板側壁部225之下端，係涵括全周由基底部311之外緣朝徑方向外側呈離間。頂板22亦由基板9之外周緣、及基板保持部31之基底部311之外周緣涵括全周擴展至徑方向外側。 The diameter of the plate body portion 224 is larger than the diameter of the substrate 9. The diameter of the lower end of the plate side wall portion 225 is larger than the diameter of the base portion 311 of the substrate holding portion 31. The lower end of the plate side wall portion 225 includes the entire circumference from the outer edge of the base portion 311 toward the outer side in the radial direction. The top plate 22 is also extended from the outer periphery of the substrate 9 and the outer periphery of the base portion 311 of the substrate holding portion 31 to the outer side in the radial direction.

如圖2所示，位於退避位置之頂板22，係以垂吊於腔室蓋部26之方式所支撐。腔室蓋部26係於中央部具有略環狀之板保持部261。板保持部261具備：以中心軸J1為中心之略圓筒狀的筒部262；與以中心軸J1為中心之略圓板狀的凸緣部263。凸緣部263係由筒部262下端朝徑方向內方擴展。 As shown in FIG. 2, the top plate 22 at the retracted position is supported by hanging from the chamber cover portion 26. The chamber cover portion 26 has a substantially annular plate holding portion 261 at the center portion. The plate holding portion 261 includes a substantially cylindrical tubular portion 262 centered on the central axis J1 and a substantially disk-shaped flange portion 263 centered on the central axis J1. The flange portion 263 is expanded inward in the radial direction by the lower end of the tubular portion 262.

被保持部221係由板本體部224之中央部朝上方突出的略環狀之部位。被保持部221具備：以中心軸J1為中心之略圓筒狀的筒部222；與以中心軸J1為中心之略圓板狀之凸緣部223。筒部222係由板本體部224上面朝上方擴展。凸緣部223係由筒部222上端朝徑方向外方擴展。筒部222位於板保持部261之筒部262之徑方向內側。凸緣部223位於板保持部261之凸緣部263上方，與凸緣部263於上下方向呈相對向。被保持部221之凸緣部223之下面，係與板保持部261之凸緣部263之上面相接，藉此使頂板22以由腔室蓋部26垂吊之方式安裝於腔室蓋部26。 The held portion 221 is a substantially annular portion that protrudes upward from the central portion of the plate body portion 224. The held portion 221 includes a substantially cylindrical tubular portion 222 centered on the central axis J1 and a substantially disk-shaped flange portion 223 centered on the central axis J1. The tubular portion 222 is extended upward from the upper surface of the plate body portion 224. The flange portion 223 is expanded outward in the radial direction from the upper end of the tubular portion 222. The tubular portion 222 is located on the inner side in the radial direction of the tubular portion 262 of the plate holding portion 261. The flange portion 223 is located above the flange portion 263 of the plate holding portion 261, and faces the flange portion 263 in the vertical direction. The lower surface of the flange portion 223 of the held portion 221 is in contact with the upper surface of the flange portion 263 of the plate holding portion 261, whereby the top plate 22 is attached to the chamber cover portion by being suspended by the chamber cover portion 26. 26.

如圖1所示，基板保持部31係以水平狀態保持基板9。亦即，基板9係依形成了細微圖案之上面91垂直於中心軸J1並朝上側的狀態而由基板保持部31所保持。基板保持部31具備基底部311、與複數之夾具312。基底部311係以中心軸J1為中心之略圓板狀之保持部本體。基底部311垂直於中心軸J1，於中央具有 開口。基底部311係於杯部4上方與杯部4於上下方向呈相對向。 複數(例如3個)之夾具312係固定於基底部311上面。複數之夾具312係於以中心軸J1為中心之周方向(以下有時簡稱為「周方向」)依約等角度間隔所配置。藉由複數之夾具312，於基底部311上方保持基板9之外緣部。 As shown in FIG. 1, the substrate holding portion 31 holds the substrate 9 in a horizontal state. In other words, the substrate 9 is held by the substrate holding portion 31 in a state in which the upper surface 91 on which the fine pattern is formed is perpendicular to the central axis J1 and faces upward. The substrate holding portion 31 includes a base portion 311 and a plurality of jigs 312. The base portion 311 is a substantially disk-shaped holding portion body centered on the central axis J1. The base bottom 311 is perpendicular to the central axis J1 and has a central portion Opening. The base portion 311 is above the cup portion 4 and faces the cup portion 4 in the up and down direction. A plurality of (for example, three) jigs 312 are fixed to the base portion 311. The plurality of jigs 312 are arranged at an angular interval around the central axis J1 (hereinafter sometimes simply referred to as "circumferential direction") at approximately equal angular intervals. The outer edge portion of the substrate 9 is held above the base portion 311 by a plurality of jigs 312.

基板旋轉機構32係配置於腔室下面部251之下面中 央部254之下方。基板旋轉機構32為例如軸旋轉型之電動馬達。 基板旋轉機構32之旋轉軸321，係貫通腔室下面部251之下面中央部254而延伸至腔室21內部。旋轉軸321係以中心軸J1為中心之略圓筒狀。於旋轉軸321之前端部，固定著基板保持部31之基底部311。旋轉軸321與腔室下面部251之下面中央部254之間，設有防止氣體或液體通過之密封件。藉由旋轉軸321進行旋轉，基板保持部31係與基板9一起以中心軸J1為中心進行旋轉。 The substrate rotating mechanism 32 is disposed in the lower surface of the lower surface portion 251 of the chamber. Below the central office 254. The substrate rotating mechanism 32 is, for example, an electric motor of a shaft rotation type. The rotating shaft 321 of the substrate rotating mechanism 32 extends through the lower central portion 254 of the chamber lower surface portion 251 to extend into the interior of the chamber 21. The rotating shaft 321 has a substantially cylindrical shape centering on the central axis J1. The base portion 311 of the substrate holding portion 31 is fixed to the end portion of the rotating shaft 321 . Between the rotating shaft 321 and the lower central portion 254 of the lower portion 251 of the chamber, there is provided a seal for preventing the passage of gas or liquid. By rotating the rotating shaft 321, the substrate holding portion 31 rotates around the central axis J1 together with the substrate 9.

於基板保持部31之基底部311之上面，係於周方向 設置複數之第1卡合部314。各第1卡合部314係朝上方突出之略柱狀。於頂板22下面，係於周方向設置複數之第2卡合部226。於各第2卡合部226之下部，設有朝上方凹陷之凹部。 On the upper surface of the base portion 311 of the substrate holding portion 31, in the circumferential direction A plurality of first engaging portions 314 are provided. Each of the first engaging portions 314 has a slightly columnar shape that protrudes upward. A plurality of second engaging portions 226 are provided on the lower surface of the top plate 22 in the circumferential direction. A recess recessed upward is provided in a lower portion of each of the second engaging portions 226.

於頂板22位於處理位置之狀態，係於第2卡合部226 之下部之凹部中，嵌入第1卡合部314。藉此，頂板22係於周方向與基板保持部31之基底部311卡合。換言之，藉由第1卡合部314及第2卡合部226，限制頂板22相對於基板保持部31的旋轉方向的相對位置。 The second engaging portion 226 is in a state where the top plate 22 is at the processing position. The first engaging portion 314 is fitted into the concave portion of the lower portion. Thereby, the top plate 22 is engaged with the base portion 311 of the substrate holding portion 31 in the circumferential direction. In other words, the relative positions of the top plate 22 in the rotational direction of the substrate holding portion 31 are restricted by the first engaging portion 314 and the second engaging portion 226.

在頂板22位於處理位置之狀態，頂板22係經由第1 卡合部314及第2卡合部226，由基板保持部31之基底部311所支 撐。頂板22之被保持部221之凸緣部223，係由腔室蓋部26之板保持部261之凸緣部263朝上方離間。亦即，被保持部221與板保持部261不接觸，由板保持部261所進行之頂板22的保持呈解除。 因此，頂板22由腔室蓋部26獨立出來，與基板保持部31及基板9一起藉由基板旋轉機構32進行旋轉。第1卡合部314及第2卡合部226係於頂板22之旋轉時，於周方向固定頂板22相對於基板保持部31之相對位置的位置固定構件。 In the state where the top plate 22 is at the processing position, the top plate 22 is via the first The engaging portion 314 and the second engaging portion 226 are supported by the base portion 311 of the substrate holding portion 31. support. The flange portion 223 of the held portion 221 of the top plate 22 is separated upward by the flange portion 263 of the plate holding portion 261 of the chamber cover portion 26. That is, the held portion 221 does not contact the plate holding portion 261, and the holding of the top plate 22 by the plate holding portion 261 is released. Therefore, the top plate 22 is separated from the chamber cover portion 26, and is rotated by the substrate rotating mechanism 32 together with the substrate holding portion 31 and the substrate 9. The first engagement portion 314 and the second engagement portion 226 are position fixing members that fix the relative positions of the top plate 22 with respect to the substrate holding portion 31 in the circumferential direction when the top plate 22 rotates.

處理液供給部5係具上部噴嘴51與下部噴嘴52。上 部噴嘴51係固定於腔室蓋部26，配置於頂板22之被保持部221的內側。上部噴嘴51係未與頂板22接觸，在頂板22進行旋轉時亦不旋轉。上部噴嘴51係連接於設在殼體6外部之處理液供給源(省略圖示)。上部噴嘴51之下端，係位於基板9上方，與基板9之上面91之中央部呈相對向。由處理液供給源供給至上部噴嘴51之處理液，係由上部噴嘴51之下端朝基板9之上面91之中央部進行供給。 The treatment liquid supply unit 5 has an upper nozzle 51 and a lower nozzle 52. on The nozzle 51 is fixed to the chamber cover portion 26 and disposed inside the held portion 221 of the top plate 22. The upper nozzle 51 is not in contact with the top plate 22, and does not rotate when the top plate 22 is rotated. The upper nozzle 51 is connected to a processing liquid supply source (not shown) provided outside the casing 6. The lower end of the upper nozzle 51 is located above the substrate 9 and faces the central portion of the upper surface 91 of the substrate 9. The processing liquid supplied from the processing liquid supply source to the upper nozzle 51 is supplied from the lower end of the upper nozzle 51 toward the central portion of the upper surface 91 of the substrate 9.

下部噴嘴52係配置於基板旋轉機構32之旋轉軸321 內側，經由位於基板保持部31之基底部311之中央的開口，由基底部311朝上方突出。下部噴嘴52係未與旋轉軸321接觸，在旋轉軸321進行旋轉時亦不旋轉。於下部噴嘴52與基底部311之間，設有防止氣體或液體通過之密封件。下部噴嘴52係連接於設在殼體6外部之處理液供給源(省略圖示)。下部噴嘴52之上端，係位於基板9下方，與基板9之下面92之中央部呈相對向。由處理液供給源供給至下部噴嘴52之處理液，係由下部噴嘴52之上端朝基板9之下面92之中央部進行供給。 The lower nozzle 52 is disposed on the rotating shaft 321 of the substrate rotating mechanism 32. The inner side protrudes upward from the base portion 311 via an opening located at the center of the base portion 311 of the substrate holding portion 31. The lower nozzle 52 is not in contact with the rotating shaft 321 and does not rotate when the rotating shaft 321 rotates. A seal for preventing the passage of gas or liquid is provided between the lower nozzle 52 and the base portion 311. The lower nozzle 52 is connected to a processing liquid supply source (not shown) provided outside the casing 6. The upper end of the lower nozzle 52 is located below the substrate 9 and faces the central portion of the lower surface 92 of the substrate 9. The processing liquid supplied from the processing liquid supply source to the lower nozzle 52 is supplied from the upper end of the lower nozzle 52 toward the central portion of the lower surface 92 of the substrate 9.

杯部4係以中心軸J1為中心之環狀的構件。杯部4 係配置於基板保持部31下面，承接來自基板9之處理液。杯部4係位於腔室下面部251之腔室內側壁部255的徑方向外側，包圍腔室內側壁部255及基板旋轉機構32之周圍。 The cup portion 4 is an annular member centered on the central axis J1. Cup 4 It is disposed under the substrate holding portion 31 and receives the processing liquid from the substrate 9. The cup portion 4 is located on the outer side in the radial direction of the chamber inner wall portion 255 of the chamber lower surface portion 251, and surrounds the chamber inner wall portion 255 and the periphery of the substrate rotating mechanism 32.

杯旋轉機構7為所謂的中空馬達，以中心軸J1為中 心使杯部4旋轉。杯旋轉機構7具備：以中心軸J1為中心之環狀之定子部71；與環狀之轉子部72。轉子部72包含略圓環狀之永久磁石。永久磁石之表面係由PTFE樹脂所塑模。轉子72係於殼體6內安裝於杯部4。具體而言，轉子72係於腔室21中安裝於杯底部42的外緣部附近。 The cup rotating mechanism 7 is a so-called hollow motor with the central axis J1 as the middle The heart rotates the cup portion 4. The cup rotating mechanism 7 includes an annular stator portion 71 centered on the central axis J1 and an annular rotor portion 72. The rotor portion 72 includes a permanent magnet having a substantially annular shape. The surface of the permanent magnet is molded from PTFE resin. The rotor 72 is attached to the cup portion 4 in the casing 6. Specifically, the rotor 72 is attached to the vicinity of the outer edge portion of the cup bottom portion 42 in the chamber 21.

定子部71係於腔室21外配置在轉子部72周圍、亦 即徑方向外側。於圖1所示之例子中，定子部71係於腔室21周圍，固定於殼體底部61上。定子部71係包含於以中心軸J1為中心之周方向配列之複數之線圈。 The stator portion 71 is disposed outside the chamber 21 around the rotor portion 72, That is, the outside of the radial direction. In the example shown in FIG. 1, the stator portion 71 is attached around the chamber 21 and is fixed to the bottom 61 of the casing. The stator portion 71 is included in a plurality of coils arranged in the circumferential direction around the central axis J1.

藉由對定子部71供給電流，於定子部71與轉子部 72之間產生以中心軸J1為中心的旋轉力。藉此，轉子部72以中心軸J1為中心依水平狀態進行旋轉。藉由於定子部71與轉子部72之間作用的磁力，轉子部72係於殼體6之腔室21內不直接亦不間接接觸於腔室21而呈浮游，以中心軸J1為中心而與杯部4一起依浮游狀態進行旋轉。基板處理裝置1中，藉由以控制部10進行控制，以杯旋轉機構7使杯部4旋轉，而決定後述之杯排液埠451及杯排氣埠461於周方向的位置。 The stator portion 71 and the rotor portion are supplied with current by supplying the current to the stator portion 71. A rotational force centering on the central axis J1 is generated between 72. Thereby, the rotor portion 72 rotates in a horizontal state centering on the central axis J1. Due to the magnetic force acting between the stator portion 71 and the rotor portion 72, the rotor portion 72 is floated in the chamber 21 of the casing 6 without directly or indirectly contacting the chamber 21, centering on the central axis J1. The cup portions 4 are rotated together in a floating state. In the substrate processing apparatus 1, the cup portion 4 is rotated by the cup rotating mechanism 7 by the control unit 10, and the position of the cup draining liquid 451 and the cup exhausting pot 461 to be described later in the circumferential direction is determined.

杯部4係具備杯外側壁部41、杯底部42、杯內側壁 部43、間隔壁44。屬於杯部4之底部的杯底部42，係以中心軸J1 為中心之略圓環狀。屬於杯部4之外側壁部的杯外側壁部41，係以中心軸J1為中心之略圓筒狀。杯外側壁部41係由杯底42之外周部、略平行於中心軸J1而朝上方擴展。屬於杯部4之內側壁部的杯內側壁部43，係以中心軸J1為中心之略圓筒狀。杯內側壁部43係位於較杯外側壁部41更靠徑方向內側，由杯底部42之內周部、略平行於中心軸J1而朝上方擴展。 The cup portion 4 has a cup outer wall portion 41, a cup bottom portion 42, and a cup inner side wall Portion 43, partition wall 44. The bottom 42 of the cup belonging to the bottom of the cup portion 4 is centered on the axis J1 The center is slightly ring-shaped. The cup outer wall portion 41 belonging to the outer wall portion of the cup portion 4 has a substantially cylindrical shape centering on the central axis J1. The cup outer side wall portion 41 is extended upward from the outer peripheral portion of the cup bottom 42 slightly parallel to the central axis J1. The cup inner side wall portion 43 belonging to the inner side wall portion of the cup portion 4 has a substantially cylindrical shape centering on the central axis J1. The cup inner side wall portion 43 is located on the inner side in the radial direction of the outer cup side wall portion 41, and is extended upward by the inner peripheral portion of the cup bottom portion 42 slightly parallel to the central axis J1.

間隔壁44係以中心軸J1為中心之略圓筒狀。間隔壁 44係於徑方向位於杯內側壁部43與杯外側壁部41之間，由杯底部42略平行於中心軸J1而朝上方擴展。以下說明中，將杯部4之杯外側壁部41與間隔壁44之間的空間稱為「外側杯空間45」。又，將杯部4之間隔壁44與杯內側壁部43之間的空間稱為「內側杯空間46」。外側杯空間45係由杯外側壁部41與杯底部42與間隔壁44所包圍之略圓筒狀之空間。內側杯空間46係由間隔壁44與杯底部42與杯內側壁部43所包圍之略圓筒狀之空間。 The partition wall 44 has a substantially cylindrical shape centering on the central axis J1. Partition wall The 44 is located between the cup inner side wall portion 43 and the cup outer side wall portion 41 in the radial direction, and is extended upward by the cup bottom portion 42 slightly parallel to the central axis J1. In the following description, the space between the cup outer wall portion 41 of the cup portion 4 and the partition wall 44 is referred to as "outer cup space 45". Further, the space between the partition wall 44 of the cup portion 4 and the inner wall portion 43 of the cup is referred to as "inner cup space 46". The outer cup space 45 is a slightly cylindrical space surrounded by the cup outer side wall portion 41 and the cup bottom portion 42 and the partition wall 44. The inner cup space 46 is a slightly cylindrical space surrounded by the partition wall 44 and the cup bottom 42 and the inner wall portion 43.

內側杯空間46位於基板保持部31之基底部311下方。杯底部42中，用以構成內側杯空間46之底部的部位，設置杯排氣埠461。換言之，杯排氣埠461係位於較間隔壁44下端更靠徑方向內側。於圖1所示狀態，杯排氣埠461係與在腔室下面部251之腔室底部256所設置之腔室排氣埠281於上下方向重疊。杯排氣埠461之下端，係接近腔室排氣埠281之上端並於上下方向呈相對向。腔室21內之氣體係經由內側杯空間46、杯排氣埠461及腔室排氣埠281而排出至腔室21外且殼體6外。杯排氣埠461之下端的尺寸及形狀，係與腔室排氣埠281之上端的尺寸及形狀略相同。換言之，杯排氣埠461下端之面積係與腔室排氣埠281上端之面積 略相等。又，杯排氣埠461下端之面積亦可例如較小於腔室排氣埠281上端之面積。 The inner cup space 46 is located below the base portion 311 of the substrate holding portion 31. In the bottom portion 42 of the cup, a portion of the bottom portion of the inner cup space 46 is formed, and a cup exhaust port 461 is provided. In other words, the cup exhaust port 461 is located on the inner side in the radial direction from the lower end of the partition wall 44. In the state shown in Fig. 1, the cup exhaust port 461 is overlapped with the chamber exhaust port 281 provided at the bottom portion 256 of the chamber lower portion 251 in the up and down direction. The lower end of the cup exhaust 埠461 is close to the upper end of the chamber exhaust port 281 and is opposite in the up and down direction. The gas system in the chamber 21 is discharged to the outside of the chamber 21 and outside the casing 6 via the inner cup space 46, the cup exhaust port 461, and the chamber exhaust port 281. The size and shape of the lower end of the cup exhaust 埠 461 is slightly the same as the size and shape of the upper end of the chamber exhaust port 281. In other words, the area of the lower end of the cup exhaust 埠 461 is the area of the upper end of the chamber exhaust 埠 281 Slightly equal. Further, the area of the lower end of the cup exhaust port 461 may be, for example, smaller than the area of the upper end of the chamber exhaust port 281.

於圖1所示例子中，杯底部42中，在較間隔壁44下 端更靠徑方向內側之部位，設有朝下方突出之略圓筒狀的底部突出部462，杯排氣埠461係設於底部突出部462內。又，於腔室下面部251之腔室底部256，設有朝上方突出之略圓筒狀之底部突出部282，腔室排氣埠281係設於底部突出部282內。腔室排氣埠281係貫通殼體底部61而突出至腔室空間外。 In the example shown in FIG. 1, the cup bottom 42 is below the partition wall 44. The end portion of the end portion in the radial direction is provided with a substantially cylindrical bottom projecting portion 462 that protrudes downward, and the cup exhaust dam 461 is provided in the bottom projecting portion 462. Further, a chamber-shaped bottom portion 256 of the chamber lower portion 251 is provided with a slightly cylindrical bottom projecting portion 282 projecting upward, and the chamber exhaust port 281 is disposed in the bottom projecting portion 282. The chamber exhaust port 281 extends through the housing bottom 61 and protrudes out of the chamber space.

外側杯空間45係於較內側杯空間46更靠徑方向外 側，位於基板保持部31之基底部311下方。杯部4之杯外側壁部41係較基板9、基板保持部31及頂板22涵括全周而位於更靠徑方向外側。杯外側壁部41之上端，係於上下方向位於與基板保持部31之基底部311、及頂板22之板側壁部225下端約相同位置。詳細而言，杯外側壁部41之上端係位於較板側壁部225下端更上方。 亦即，杯外側壁部41之上端部與板側壁部225之下端部，係於徑方向重疊。杯部4之上端的直徑大於板側壁部225之下端的直徑。 杯部4之上端係涵括全周由板側壁部225之下端朝徑方向外側呈離間。 The outer cup space 45 is more outward than the inner cup space 46. The side is located below the base portion 311 of the substrate holding portion 31. The cup outer wall portion 41 of the cup portion 4 is located further outward in the radial direction than the substrate 9, the substrate holding portion 31, and the top plate 22, including the entire circumference. The upper end of the cup outer wall portion 41 is located at the same position as the bottom portion of the substrate holding portion 31 and the lower end of the plate side wall portion 225 of the top plate 22 in the vertical direction. In detail, the upper end of the cup outer side wall portion 41 is located above the lower end of the side wall portion 225. That is, the upper end portion of the cup outer wall portion 41 and the lower end portion of the plate side wall portion 225 overlap in the radial direction. The diameter of the upper end of the cup portion 4 is larger than the diameter of the lower end of the side wall portion 225. The upper end of the cup portion 4 includes the entire circumference from the lower end of the plate side wall portion 225 toward the outer side in the radial direction.

由處理液供給部5所供給、並由旋轉之基板9飛散的 處理液，係由位於基板9周圍之板側壁部225所承接，於板側壁部225之內周面上朝下方移動。然後，由板側壁部225落下之處理液，流入至杯部4之外側杯空間45。亦即，來自處理液供給部5之處理液係流入至杯部4之外側杯空間45。 The material supplied from the processing liquid supply unit 5 and scattered by the rotating substrate 9 The treatment liquid is received by the plate side wall portion 225 located around the substrate 9, and moves downward on the inner circumferential surface of the plate side wall portion 225. Then, the treatment liquid dropped by the plate side wall portion 225 flows into the outer cup space 45 of the cup portion 4. That is, the treatment liquid from the treatment liquid supply unit 5 flows into the outer cup space 45 of the cup portion 4.

杯底部42中，用以構成外側杯空間45之底部的部 位，設有杯排液埠。換言之，杯排液埠451係位於較間隔壁44下端更靠徑方向外側。於圖1所示狀態，杯排液埠451係與於腔室下面部251之腔室底部256所設置之腔室排液埠271於上下方向重疊。杯排液埠451之下端係接近腔室排液埠271之上端並於上下方向呈相對向。然後，流入至外側杯空間45之液體，係經由杯排液埠451及腔室排液埠271而排出至腔室21外且殼體6外。杯排液埠451之下端的尺寸及形狀，係與腔室排液埠271之上端的尺寸及形狀略相同。換言之，杯排液埠451之下端的面積係與腔室排液埠271之上端的面積略相等。又，杯排液埠451之下端的面積亦可例如小於腔室排液埠271之上端的面積。 The bottom portion of the cup 42 that forms the bottom of the outer cup space 45 Position, with cup drain. In other words, the cup draining bowl 451 is located further outward in the radial direction than the lower end of the partition wall 44. In the state shown in Fig. 1, the cup draining liquid 451 is overlapped with the chamber liquid discharge port 271 provided at the bottom portion 256 of the chamber lower portion 251 in the vertical direction. The lower end of the cup draining port 451 is close to the upper end of the chamber draining port 271 and is opposed in the up and down direction. Then, the liquid that has flowed into the outer cup space 45 is discharged to the outside of the chamber 21 and outside the casing 6 via the cup drain 451 and the chamber drain 271. The size and shape of the lower end of the cup draining port 451 is slightly the same as the size and shape of the upper end of the chamber draining port 271. In other words, the area of the lower end of the cup drain port 451 is slightly equal to the area of the upper end of the chamber drain port 271. Further, the area of the lower end of the cup draining port 451 may be, for example, smaller than the area of the upper end of the chamber draining port 271.

於圖1所示例子中，杯底部42中，在較間隔壁44下 端更靠徑方向外側之部位，設有朝下方突出之略圓筒狀的底部突出部452，杯排液埠451係設於底部突出部452內。又，於腔室下面部251之腔室底部256，設有朝上方突出之略圓筒狀之底部突出部272，腔室排液埠271係設於底部突出部272內。腔室排液埠271係貫通殼體底部61而突出至腔室空間外。 In the example shown in FIG. 1, the cup bottom 42 is below the partition wall 44. The end portion of the end portion which is further outward in the radial direction is provided with a substantially cylindrical bottom projecting portion 452 which protrudes downward, and the cup draining liquid 451 is provided in the bottom projecting portion 452. Further, a chamber-shaped bottom portion 256 of the chamber lower portion 251 is provided with a slightly cylindrical bottom projecting portion 272 which protrudes upward, and the chamber draining port 271 is provided in the bottom projecting portion 272. The chamber drain 271 extends through the housing bottom 61 and protrudes out of the chamber space.

圖3為表示杯部4的仰視圖。杯部4中，杯排液埠 451及杯排氣埠461係分別於杯底部42設有各1個。圖3中，為了容易理解圖式，對杯排液埠451及杯排氣埠461加註平行斜線(圖12、圖15及圖19中亦相同)。圖3所示例子中，杯排液埠451係挾持著中心軸J1位於杯排氣埠461的相反側。換言之，杯排液埠451與杯排氣埠461係於周方向間隔約180度排列。杯排液埠451位於較杯排氣埠461更靠徑方向外側。 FIG. 3 is a bottom view showing the cup portion 4. Cup part 4, cup draining 埠 Each of the 451 and the cup exhaust sill 461 is provided at the bottom 42 of the cup. In Fig. 3, for easy understanding of the drawings, the cup drain 451 and the cup exhaust 461 are filled with parallel oblique lines (the same applies in Figs. 12, 15 and 19). In the example shown in Fig. 3, the cup draining liquid 451 is held on the opposite side of the cup exhaust port 461 by the central axis J1. In other words, the cup draining bowl 451 and the cup exhausting pot 461 are arranged at intervals of approximately 180 degrees in the circumferential direction. The cup draining bowl 451 is located on the outer side in the radial direction of the cup exhaust port 461.

杯底部42係具備：朝下方突出之複數之外側凸部 453；及朝下方突出之複數之內側凸部463。複數之外側凸部453係與在內部設有杯排液埠451之底部突出部452於周方向排列(亦即，在距中心軸J1之徑方向距離相等的圓周上排列)。複數之內側凸部463係與在內部設有杯排氣埠461之底部突出部462於周方向排列。圖3所示例子中，係於杯部4設有15個外側凸部453、與15個內側凸部463。 The bottom 42 of the cup has a plurality of outer convex portions that protrude downward 453; and a plurality of inner convex portions 463 protruding downward. The plurality of outer side convex portions 453 are arranged in the circumferential direction with the bottom protruding portions 452 having the cup draining liquid 451 therein (that is, arranged on a circumference having the same distance from the central axis J1 in the radial direction). The plurality of inner convex portions 463 are arranged in the circumferential direction with the bottom protruding portions 462 having the cup exhaust sills 461 therein. In the example shown in FIG. 3, the cup portion 4 is provided with 15 outer convex portions 453 and 15 inner convex portions 463.

各外側凸部453為略圓柱狀，各外側凸部453之直徑 係與內部設有杯排液埠451之底部突出部452之外徑略相等。各內側凸部463為略圓柱狀，各內側凸部463之直徑係與內部設有杯排氣埠461之底部突出部462之外徑略相等。各外側凸部453、各內側凸部463、底部突出部452及底部突出部462由杯底部42的各別突出量(亦即，上下方向之高度)係彼此略相等。各外側凸部453及各內側凸部463之內部並未形成流路，並未經由各外側凸部453及各內側凸部463而使杯部4內之空間與杯部4下方之空間相連通。 Each of the outer convex portions 453 has a substantially cylindrical shape, and the diameter of each outer convex portion 453 It is slightly equal to the outer diameter of the bottom protrusion 452 having the cup drain 451 inside. Each of the inner convex portions 463 has a substantially cylindrical shape, and the diameter of each inner convex portion 463 is slightly equal to the outer diameter of the bottom protruding portion 462 in which the cup exhaust sill 461 is provided. The respective outer convex portions 453, the inner convex portions 463, the bottom protruding portions 452, and the bottom protruding portions 462 are slightly equal to each other by the respective protruding amounts of the cup bottom portions 42 (that is, the heights in the vertical direction). A flow path is not formed in each of the outer convex portions 453 and the inner convex portions 463, and the space inside the cup portion 4 is not communicated with the space under the cup portion 4 via the outer convex portions 453 and the inner convex portions 463. .

圖4為表示腔室下面部251之俯視圖。圖4中以虛線 一併表示杯部4之杯外側壁部41、間隔壁44及杯內側壁部43。腔室21中，將複數之腔室排液埠271、及複數之腔室排氣埠281、284設於腔室下面部251之腔室底部256。圖4中，為了容易理解圖示，對腔室排液埠271及腔室排氣部281、284加註平行斜線(圖13、圖16及圖20中亦相同)。 4 is a plan view showing the lower portion 251 of the chamber. In Figure 4, the dotted line The cup outer wall portion 41, the partition wall 44, and the cup inner side wall portion 43 of the cup portion 4 are also shown. In the chamber 21, a plurality of chamber drains 271, and a plurality of chamber exhaust ports 281, 284 are provided in the chamber bottom 256 of the chamber lower portion 251. In FIG. 4, in order to facilitate understanding of the illustration, the chamber drain 271 and the chamber exhaust portions 281, 284 are filled with parallel oblique lines (the same applies to FIGS. 13, 16, and 20).

複數之腔室排液埠271係分別設於在腔室下面部251 之腔室底部256所設置的複數底部突出部272內。複數之腔室排液埠271係排列於周方向。複數之腔室排液埠271具有相同尺寸及構造，且複數之底部突出部272亦具有相同的尺寸及構造。 A plurality of chamber discharge ports 271 are respectively disposed at the lower portion of the chamber 251 The bottom portion 272 of the chamber bottom 256 is disposed. A plurality of chamber discharge ports 271 are arranged in the circumferential direction. The plurality of chamber drains 271 have the same size and configuration, and the plurality of bottom projections 272 also have the same size and configuration.

複數之腔室排液埠271係具有複數之腔室排液埠 群。圖4所示之例子中，於腔室下面部251之腔室底部256設有9個腔室排液埠271，9個腔室排液埠271係具有第1腔室排液埠群276a、第2腔室排液埠群276b、第3腔室排液埠群276c。以下說明中，將第1腔室排液埠群276a、第2腔室排液埠群276b、第3腔室排液埠群276c整合稱為「腔室排液埠群276a~276c」。圖4中，將腔室排液埠群276a~276c分別以二點虛線圈圍(圖26中亦相同)。 The plurality of chambers drain 埠 271 has a plurality of chamber drains 埠 group. In the example shown in FIG. 4, nine chamber drains 271 are provided in the bottom 256 of the chamber at the lower portion 251 of the chamber, and the nine chamber drains 271 have a first chamber draining group 276a, The second chamber draining group 276b and the third chamber draining group 276c. In the following description, the first chamber draining group 276a, the second chamber draining group 276b, and the third chamber draining group 276c are collectively referred to as "chamber draining group 276a to 276c". In Fig. 4, the chamber draining groups 276a to 276c are respectively surrounded by two dotted circles (the same applies in Fig. 26).

各腔室排液埠群276a~276c係具有3個腔室排液埠 271。於各腔室排液埠群276a~276c中，3個腔室排液埠271於周方向依等角度間隔排列。第1腔室排液埠群276a之3個腔室排液埠271，係連接於基板處理裝置1之第1排液部96a。第2腔室排液埠群276b之3個腔室排液埠271，係連接於基板處理裝置1之第2排液部96b。第3腔室排液埠群276c之3個腔室排液埠271，係連接於基板處理裝置1之第3排液部96c。第1排液部96a、第2排液部96b及第3排液部96c係彼此獨立設置。 Each chamber draining group 276a~276c has three chambers for draining 271. In each of the chamber draining groups 276a to 276c, the three chamber draining ports 271 are arranged at equal angular intervals in the circumferential direction. The three chamber drains 271 of the first chamber draining group 276a are connected to the first drain portion 96a of the substrate processing apparatus 1. The three chamber drain ports 271 of the second chamber draining group 276b are connected to the second drain portion 96b of the substrate processing apparatus 1. The three chamber drains 271 of the third chamber draining group 276c are connected to the third drain portion 96c of the substrate processing apparatus 1. The first liquid discharge portion 96a, the second liquid discharge portion 96b, and the third liquid discharge portion 96c are provided independently of each other.

腔室下面部251之腔室底部256係具備朝上方突出之 1個外側凸部273。外側凸部273係與分別於內部設有複數之腔室排液埠271的複數底部突出部272於周方向排列。外側凸部273為略圓柱狀，外側凸部273之直徑係與各底部突出部272之外徑為略相等。於外側凸部273之內部並未形成流路。 The bottom portion 256 of the chamber lower portion 251 is provided to protrude upward. 1 outer convex portion 273. The outer convex portion 273 is arranged in the circumferential direction with a plurality of bottom protruding portions 272 each having a plurality of chamber discharge ports 271 therein. The outer convex portion 273 has a substantially cylindrical shape, and the diameter of the outer convex portion 273 is slightly equal to the outer diameter of each of the bottom protruding portions 272. A flow path is not formed inside the outer convex portion 273.

複數之腔室排氣埠281係分別設於在腔室下面部251 之腔室底部256所設置之複數底部突出部282內。又，複數之腔室排氣埠284係分別設於在腔室下面部251之腔室底部256所設置且朝上方突出之複數底部突出部285內。各腔室排氣埠284係於周方 向與腔室排氣埠281相鄰接。以下說明中，為了容易區別腔室排氣埠281、284，而將腔室排氣埠281、284分別稱為「大腔室排氣埠281」及「小腔室排氣埠284」。又，有時亦將大腔室排氣埠281及小腔室排氣埠284整合簡稱為「腔室排氣埠」。 A plurality of chamber exhaust ports 281 are respectively disposed at the lower portion of the chamber 251 The bottom portion 282 of the chamber bottom 256 is disposed. Further, a plurality of chamber exhaust ports 284 are respectively provided in a plurality of bottom protrusions 285 which are provided at the bottom portion 256 of the chamber lower portion 251 and protrude upward. Each chamber exhaust 埠 284 is attached to the square Adjacent to the chamber exhaust port 281. In the following description, in order to easily distinguish the chamber exhaust ports 281 and 284, the chamber exhaust ports 281 and 284 are referred to as "large chamber exhaust port 281" and "small chamber exhaust port 284", respectively. Further, the large chamber exhaust port 281 and the small chamber exhaust port 284 may be simply referred to as "chamber exhaust ports".

小腔室排氣埠284之直徑係較小於大腔室排氣埠281 之直徑。換言之，小腔室排氣埠284之上端面積係較小於大腔室排氣埠281之上端面積。於內部設有小腔室排氣埠284之底部突出部285的外徑，係較小於內部設有大腔室排氣埠281之底部突出部282的外徑。複數之小腔室排氣埠284係與複數之大腔室排氣埠281一起排列於周方向。複數之大腔室排氣埠281具有相同尺寸及構造，複數之底部突出部282亦具有相同尺寸及構造。複數之小腔室排氣埠284具有相同尺寸及構造，複數之底部突出部285亦具有相同尺寸及構造。 The diameter of the small chamber exhaust 埠 284 is smaller than that of the large chamber exhaust 埠 281 The diameter. In other words, the area of the upper end of the small chamber exhaust dam 284 is smaller than the area of the upper end of the large chamber exhaust 埠 281. The outer diameter of the bottom projection 285 of the small chamber exhaust port 284 is internally smaller than the outer diameter of the bottom projection 282 having the large chamber exhaust port 281 therein. A plurality of small chamber exhaust ports 284 are arranged in the circumferential direction together with a plurality of large chamber exhaust ports 281. The plurality of large chamber exhaust ports 281 have the same size and configuration, and the plurality of bottom protrusions 282 also have the same size and configuration. The plurality of small chamber exhaust ports 284 have the same size and configuration, and the plurality of bottom protrusions 285 also have the same size and configuration.

腔室下面部251之腔室底部256係具備朝上方突出之 複數內側凸部283。複數之內側凸部283係與複數之底部突出部282及複數之底部突出部285於周方向排列。各內側凸部283為略圓柱狀，內側凸部283之直徑係與內部設有大腔室排氣埠281之底部突出部282的外徑略相等。各內側凸部283之內部並未形成流路。 The bottom portion 256 of the chamber lower portion 251 is provided to protrude upward. The inner side convex portion 283 is plural. The plurality of inner convex portions 283 are arranged in the circumferential direction with a plurality of bottom protruding portions 282 and a plurality of bottom protruding portions 285. Each of the inner convex portions 283 has a substantially cylindrical shape, and the diameter of the inner convex portion 283 is slightly equal to the outer diameter of the bottom protruding portion 282 in which the large chamber exhaust port 281 is provided. A flow path is not formed inside each of the inner convex portions 283.

圖4所示之例子中，3個大腔室排氣埠281、3個小 腔室排氣埠284、與4個內側凸部283係設於腔室下面部251之腔室底部256。與上述第1腔室排液埠群276a挾持著中心軸J1而位於相反側的第1腔室排氣埠群286a，係具有1個大腔室排氣埠281、1個小腔室排氣埠284、與1個內側凸部283。 In the example shown in Figure 4, three large chamber exhaust 埠 281, three small The chamber exhaust port 284 and the four inner protrusions 283 are attached to the chamber bottom 256 of the chamber lower portion 251. The first chamber exhaust manifold group 286a is located on the opposite side of the first chamber discharge port group 276a, and has a large chamber exhaust port 281 and a small chamber exhaust.埠284, and one inner convex portion 283.

與第2腔室排液埠群276b挾持著中心軸J1而位於相 反側的第2腔室排氣埠群286b，亦與第1腔室排氣埠群286a同樣地具有1個大腔室排氣埠281、1個小腔室排氣埠284、與1個內側凸部283。與第3腔室排液埠群276c挾持著中心軸J1而位於相反側的第3腔室排氣埠群286c，亦與第1腔室排氣埠群286a同樣地具有1個大腔室排氣埠281、1個小腔室排氣埠284、與1個內側凸部283。 And the second chamber draining group 276b holds the central axis J1 and is located at the phase Similarly to the first chamber exhaust manifold 286a, the second chamber exhaust manifold 286b on the reverse side has one large chamber exhaust port 281, one small chamber exhaust port 284, and one. Inner convex portion 283. The third chamber exhaust manifold group 286c located on the opposite side of the third chamber draining group 276c with the central axis J1 and the first chamber exhaust manifold group 286a also has one large chamber row. The gas cylinder 281, one small chamber exhaust port 284, and one inner convex portion 283.

以下說明中，有時亦將第1腔室排氣埠群286a、第2 腔室排氣埠群286b及第3腔室排氣埠群286c整合稱為「腔室排氣埠群286a~286c」。圖4中，將腔室排氣埠群286a~286c分別以二點虛線圈圍。各腔室排氣埠群286a~286c中，大腔室排氣埠281、小腔室排氣埠284及內側凸部283係於周方向依等角度間隔排列。4個內側凸部283中，1個內側凸部283係未包含於腔室排氣埠群286a~286c，與外側凸部273挾持著中心軸J1而位於相反側。 In the following description, the first chamber exhaust manifold group 286a and the second chamber may be used. The chamber exhaust manifold group 286b and the third chamber exhaust manifold group 286c are collectively referred to as "chamber exhaust manifold groups 286a to 286c". In Fig. 4, the chamber exhaust manifolds 286a to 286c are respectively surrounded by two dotted circles. In each of the chamber exhaust manifolds 286a to 286c, the large chamber exhaust port 281, the small chamber exhaust port 284, and the inner convex portion 283 are arranged at equal angular intervals in the circumferential direction. Of the four inner convex portions 283, one inner convex portion 283 is not included in the chamber exhaust manifold group 286a to 286c, and the outer convex portion 273 is located on the opposite side to the central axis J1.

第1腔室排氣埠群286a之大腔室排氣埠281及小腔 室排氣埠284係連接於第1排氣機構95a。第2腔室排氣埠群286b之大腔室排氣埠281及小腔室排氣埠284係連接於第2排氣機構95b。第3腔室排氣埠群286c之大腔室排氣埠281及小腔室排氣埠284係連接於第3排氣機構95c。第1排氣機構95a、第2排氣機構95b、第3排氣機構95c係配置於基板處理裝置1之外部。在基板處理裝置1使用期間，第1排氣機構95a、第2排氣機構95b及第3排氣機構95c所進行的吸引係持續進行。以下說明中，有時亦將第1排氣機構95a、第2排氣機構95b及第3排氣機構95c整合稱為「排氣機構95a~95c」。 Large chamber exhaust 埠 281 and small cavity of the first chamber exhaust manifold 286a The chamber exhaust port 284 is connected to the first exhaust mechanism 95a. The large chamber exhaust port 281 and the small chamber exhaust port 284 of the second chamber exhaust port group 286b are connected to the second exhaust mechanism 95b. The large chamber exhaust port 281 and the small chamber exhaust port 284 of the third chamber exhaust port group 286c are connected to the third exhaust mechanism 95c. The first exhaust mechanism 95a, the second exhaust mechanism 95b, and the third exhaust mechanism 95c are disposed outside the substrate processing apparatus 1. During the use of the substrate processing apparatus 1, the suction by the first exhaust mechanism 95a, the second exhaust mechanism 95b, and the third exhaust mechanism 95c continues. In the following description, the first exhaust mechanism 95a, the second exhaust mechanism 95b, and the third exhaust mechanism 95c may be collectively referred to as "exhaust mechanisms 95a to 95c".

基板處理裝置1係藉由控制部10控制杯旋轉機構7， 而使杯排氣埠461選擇性地重疊至複數之大腔室排氣埠281及複數之小腔室排氣埠284中之任一個。又，使杯排液埠451選擇性地重疊至複數之腔室排液埠271中之任一個。 The substrate processing apparatus 1 controls the cup rotating mechanism 7 by the control unit 10, The cup exhaust enthalpy 461 is selectively overlapped to any of the plurality of large chamber exhaust ports 281 and the plurality of small chamber exhaust ports 284. Further, the cup draining port 451 is selectively overlapped to any one of the plurality of chamber draining ports 271.

圖5為表示基板處理裝置1中之基板9之處理流程一 例的圖。在基板處理裝置1中對基板9進行處理時，係藉由控制部10控制杯旋轉機構7，使杯部4旋轉，停止於圖2所示方向(步驟S11)。以下說明中，將圖2所示之杯部4之方向(亦即杯部4之狀態)稱為「待機狀態」。 FIG. 5 is a flow chart showing the processing of the substrate 9 in the substrate processing apparatus 1. Example of the example. When the substrate 9 is processed in the substrate processing apparatus 1, the cup rotating mechanism 7 is controlled by the control unit 10, and the cup portion 4 is rotated to stop in the direction shown in Fig. 2 (step S11). In the following description, the direction of the cup portion 4 (that is, the state of the cup portion 4) shown in Fig. 2 is referred to as "standby state".

圖2所示之待機狀態下，杯排氣埠461係與腔室底部 256之4個內側凸部283中、未包含於腔室排氣埠群286a~286c(參照圖4)之1個內側凸部283於上下方向重疊。亦即，圖2中，顯示了杯排氣埠461位於由所有之大腔室排氣埠281及所有之小腔室排氣埠284(參照圖4)於周方向偏離的位置的狀態。杯排氣埠461之下端與腔室底部256之內側凸部283之上端面，係接近而於上下方向呈相對向。藉此，杯排氣埠461實質上被閉塞。 In the standby state shown in Figure 2, the cup exhaust 埠 461 is attached to the bottom of the chamber. Among the four inner convex portions 283 of 256, one inner convex portion 283 which is not included in the chamber exhaust manifold group 286a to 286c (see FIG. 4) overlaps in the vertical direction. That is, in Fig. 2, the cup exhaust port 461 is shown in a state in which all of the large chamber exhaust ports 281 and all of the small chamber exhaust ports 284 (see Fig. 4) are deviated in the circumferential direction. The lower end of the cup exhaust port 461 and the upper end surface of the inner convex portion 283 of the chamber bottom portion 256 are close to each other and face each other in the up and down direction. Thereby, the cup exhaust enthalpy 461 is substantially blocked.

又，杯排液埠451係與腔室底部256之外側凸部273於上下方向重疊。杯排液埠451之下端與外側凸部273之上端面，係於上下方向接近並相對向。藉此，杯排液埠451實質上被閉塞。 Further, the cup draining bowl 451 is overlapped with the outer side convex portion 273 of the chamber bottom portion 256 in the vertical direction. The lower end of the cup draining bowl 451 and the upper end surface of the outer convex portion 273 are close to each other and opposed to each other. Thereby, the cup draining bowl 451 is substantially blocked.

於圖2所示之待機狀態，第1腔室排氣埠群286a之大腔室排氣埠281係與杯底部42之內側凸部463於上下方向重疊。大腔室排氣埠281之上端與內側凸部463之下端面，係於上下方向接近並相對向。藉此，大腔室排氣埠281實質上被閉塞。 In the standby state shown in FIG. 2, the large chamber exhaust port 281 of the first chamber exhaust port group 286a overlaps with the inner convex portion 463 of the cup bottom portion 42 in the vertical direction. The upper end of the large chamber exhaust dam 281 and the lower end surface of the inner convex portion 463 are close to each other and opposed to each other. Thereby, the large chamber exhaust enthalpy 281 is substantially blocked.

於圖4所示之第1腔室排氣埠群286a之小腔室排氣埠284亦與杯底部42之內側凸部463於上下方向重疊。小腔室排 氣埠284之上端與內側凸部463之下端面，係於上下方向接近並相對向。藉此，小腔室排氣埠284實質上被閉塞。第2腔室排氣埠群286b及第3腔室排氣埠群286c之各別的大腔室排氣埠281及小腔室排氣埠284，亦同樣地分別與內側凸部463於上下方向接近並相對向，藉此實質上被閉塞。 The small chamber exhaust port 284 of the first chamber exhaust port group 286a shown in Fig. 4 also overlaps the inner convex portion 463 of the cup bottom portion 42 in the vertical direction. Small chamber row The upper end of the air dam 284 and the lower end surface of the inner convex portion 463 are close to each other and opposed to each other. Thereby, the small chamber exhaust dam 284 is substantially occluded. The respective large chamber exhaust port 281 and the small chamber exhaust port 284 of the second chamber exhaust port group 286b and the third chamber exhaust port group 286c are similarly formed with the inner convex portion 463, respectively. The directions are close and opposite, whereby they are substantially occluded.

又，各腔室排液埠271係與杯底部42之外側凸部453 於上下方向重疊。各腔室排液埠271之上端與外側凸部453之下端面，係於上下方向接近並相對向。藉此，各腔室排液埠271實質上被閉塞。 Further, each of the chamber drains 271 is attached to the outer bottom convex portion 453 of the cup bottom 42. Overlap in the up and down direction. The upper end of each chamber discharge port 271 and the lower end surface of the outer convex portion 453 are close to each other and opposed to each other. Thereby, each of the chamber drains 271 is substantially blocked.

在杯部4成為待機狀態時，腔室蓋部26及頂板22係 移動至圖2所示之退避位置，使搬入口64開放。然後，由搬入口64將基板9搬入至殼體6內之腔室21內，由基板保持部31所保持(步驟S12)。 When the cup portion 4 is in the standby state, the chamber cover portion 26 and the top plate 22 are Move to the retracted position shown in Fig. 2 to open the carry-in port 64. Then, the substrate 9 is carried into the chamber 21 in the casing 6 by the carry-in port 64, and held by the substrate holding portion 31 (step S12).

如上述，於基板處理裝置1，在杯部4為待機狀態時， 杯排氣埠461之下端接近腔室底部256，各大腔室排氣埠281之上端及各小腔室排氣埠284之上端接近杯底部42。藉此，即使為第1排氣機構95a、第2排氣機構95b及第3排氣機構95c(參照圖4)所進行的吸引持續的狀態，仍使經由杯排氣埠461的杯部4內之氣體吸引實質上停止。其結果，於基板9之搬入時，可抑制殼體6之外部氣體由開放之搬入口64流入至殼體6內及腔室21內。 As described above, in the substrate processing apparatus 1, when the cup portion 4 is in the standby state, The lower end of the cup exhaust 埠 461 is close to the bottom 256 of the chamber, and the upper end of each large chamber exhaust port 281 and the upper end of each small chamber exhaust port 284 are close to the cup bottom 42. Thereby, even if the suction by the first exhaust mechanism 95a, the second exhaust mechanism 95b, and the third exhaust mechanism 95c (see FIG. 4) continues, the cup portion 4 via the cup exhaust port 461 is still provided. The gas attraction inside is substantially stopped. As a result, when the substrate 9 is carried in, it is possible to suppress the outside air of the casing 6 from flowing into the casing 6 and the chamber 21 from the open inlet 64.

尚且，於基板處理裝置1，若杯排氣埠461之下端接 近腔室底部256，則各大腔室排氣埠281之上端及各小腔室排氣埠284之上端並不一定需要接近杯底部42。又，若各大腔室排氣埠281之上端及各小腔室排氣埠284之上端接近杯底部42，則杯排氣埠 461之下端並不一定需要接近腔室底部256。基板處理裝置1中，藉由杯排氣埠461之下端接近腔室底部256、或各大腔室排氣埠281之上端及各小腔室排氣埠284之上端接近杯底部42，而使經由杯排氣埠461的杯部4內之氣體吸引停止。其結果，與上述同樣地，可抑制殼體6之外部氣體由開放之搬入口64流入至殼體6內及腔室21內。 Further, in the substrate processing apparatus 1, if the cup exhaust 埠 461 is terminated Near the bottom 256 of the chamber, the upper ends of the large chamber exhaust ports 281 and the upper ends of the small chamber exhaust ports 284 do not necessarily need to be close to the cup bottom 42. Moreover, if the upper end of each large chamber exhaust port 281 and the upper end of each small chamber exhaust port 284 are close to the cup bottom portion 42, the cup exhaust port The lower end of 461 does not necessarily need to be close to the bottom 256 of the chamber. In the substrate processing apparatus 1, the lower end of the cup exhaust port 461 is close to the bottom portion 256 of the chamber, or the upper end of each large chamber exhaust port 281 and the upper end of each small chamber exhaust port 284 are close to the bottom portion 42 of the cup. The gas suction in the cup portion 4 via the cup exhaust port 461 is stopped. As a result, in the same manner as described above, it is possible to suppress the outside air of the casing 6 from flowing into the casing 6 and the inside of the casing 21 through the open inlet 64.

保持基板9時，蓋部65移動至上方，如圖1所示般 搬入口64被閉塞。又，腔室蓋部26及頂板22下降，位於圖1所示之處理位置。藉此，腔室21內形成腔室空間。又，由板保持部261所進行之頂板22的保持解除。於腔室空間中，由上部噴嘴51等供給氮等惰性氣體。 When the substrate 9 is held, the lid portion 65 moves to the top as shown in FIG. The entrance 64 is blocked. Further, the chamber cover portion 26 and the top plate 22 are lowered and are located at the processing position shown in FIG. Thereby, a chamber space is formed in the chamber 21. Further, the holding of the top plate 22 by the plate holding portion 261 is released. An inert gas such as nitrogen is supplied from the upper nozzle 51 or the like in the chamber space.

接著，藉由控制部10控制杯旋轉機構7，使杯部4 由待機狀態開始旋轉，停止於圖1所示方向(步驟S13)。以下說明中，將圖1所示之杯部4的方向(亦即，杯部4之狀態)稱為「第1處理狀態」。 Next, the cup rotating mechanism 7 is controlled by the control unit 10 to make the cup portion 4 The rotation starts from the standby state, and stops in the direction shown in Fig. 1 (step S13). In the following description, the direction of the cup portion 4 shown in Fig. 1 (that is, the state of the cup portion 4) is referred to as a "first processing state".

於圖1所示之第1處理狀態中，如上述，杯排氣埠 461係與第1腔室排氣埠群286a之大腔室排氣埠281於上下方向重疊。杯排氣埠461之下端與該大腔室排氣埠281之上端，係接近而於上下方向呈對向。藉此，杯排氣埠461與第1腔室排氣埠群286a之大腔室排氣埠281實質上連接。然後，藉由第1排氣機構95a(參照圖4)，杯部4內之氣體係經由杯排氣埠461及大腔室排氣埠281而排出至腔室21外且殼體6外。又，腔室21內之杯部4外的氣體，亦經由內側杯空間46、杯排氣埠461及大腔室排氣埠281而排出至腔室21外且殼體6外。 In the first processing state shown in FIG. 1, as described above, the cup exhaust 埠 The large chamber exhaust port 281 of the 461 system and the first chamber exhaust port group 286a overlaps in the vertical direction. The lower end of the cup exhaust port 461 and the upper end of the large chamber exhaust port 281 are close to each other and face in the up and down direction. Thereby, the cup exhaust port 461 is substantially connected to the large chamber exhaust port 281 of the first chamber exhaust port group 286a. Then, by the first exhaust mechanism 95a (see FIG. 4), the gas system in the cup portion 4 is discharged to the outside of the chamber 21 via the cup exhaust port 461 and the large chamber exhaust port 281, and outside the casing 6. Further, the gas outside the cup portion 4 in the chamber 21 is also discharged to the outside of the chamber 21 and outside the casing 6 via the inner cup space 46, the cup exhaust port 461, and the large chamber exhaust port 281.

在杯部4為第1處理狀態時，圖4所示之第1腔室排 氣埠群286a之小腔室排氣埠284、第2腔室排氣埠群286b及第3腔室排氣埠群286c之分別的大腔室排氣埠281及小腔室排氣埠284，係與杯底部42之內側凸部463(參照圖3)於上下方向分別重疊，實質上被閉塞。 When the cup portion 4 is in the first processing state, the first chamber row shown in FIG. 4 The large chamber exhaust port 281 and the small chamber exhaust port 281 of the small chamber exhaust port 284, the second chamber exhaust port group 286b, and the third chamber exhaust port group 286c of the air group 286a, respectively. The inner convex portion 463 (see FIG. 3) of the bottom portion 42 of the cup overlaps in the vertical direction and is substantially closed.

如圖1所示，杯排液埠451係與第1腔室排液埠群 276a之中央之腔室排液埠271於上下方向重疊。杯排液埠451之下端與該腔室排液埠271之上端，係接近而於上下方向呈對向。藉此，杯排液埠451與第1腔室排液埠群276a之腔室排液埠271實質上連接。該腔室排液埠271以外之各腔室排液埠271(參照圖4)係與杯底部42之外側凸部453於上下方向重疊，實質上被閉塞。 As shown in Figure 1, the cup draining liquid 451 system and the first chamber draining liquid group The chamber discharge port 271 in the center of 276a overlaps in the up and down direction. The lower end of the cup draining bowl 451 and the upper end of the chamber draining port 271 are close to each other and are opposed in the up and down direction. Thereby, the cup drain port 451 is substantially connected to the chamber drain port 271 of the first chamber drain port group 276a. Each of the chamber discharge ports 271 (see FIG. 4) other than the chamber discharge port 271 is overlapped with the outer side convex portion 453 of the cup bottom portion 42 in the vertical direction, and is substantially closed.

在杯部4成為第1處理狀態時，基板旋轉機構32被 驅動，使基板9、基板保持部31及頂板22開始旋轉(步驟S14)。基板9、基板保持部31及頂板22的旋轉速度彼此相等、旋轉方向相同。步驟S14可與步驟S13一起並行，亦可於步驟S12與步驟S13之間進行。 When the cup portion 4 is in the first processing state, the substrate rotating mechanism 32 is Driven, the substrate 9, the substrate holding portion 31, and the top plate 22 start to rotate (step S14). The rotation speeds of the substrate 9, the substrate holding portion 31, and the top plate 22 are equal to each other and the rotation direction is the same. Step S14 may be performed in parallel with step S13, or may be performed between step S12 and step S13.

接著，由處理液供給部5之上部噴嘴51，對旋轉中 之基板9之上面91開始供給第1處理液(步驟S15)。連續供給至基板9之上面91之中央部的第1處理液，係因離心力而朝徑方向外方移動。第1處理液係於基板9之上面91擴展並被覆上面91之全面。藉此，進行由第1處理液對基板9之上面91的處理。基板9之上面91由於接近位於處理位置之頂板22下面，故由第1處理液所進行之基板9之處理，係於基板9之上面91與頂板22之下面之間的較狹窄空間內進行。藉此，可抑制基板9之上方空間中之處理 液環境氣體的擴散，並可抑制處理中之基板9的溫度降低。 Next, the nozzle 51 is placed by the upper portion of the processing liquid supply unit 5, and is rotated. The upper surface 91 of the substrate 9 starts to supply the first processing liquid (step S15). The first processing liquid continuously supplied to the central portion of the upper surface 91 of the substrate 9 is moved outward in the radial direction by the centrifugal force. The first treatment liquid is extended on the upper surface 91 of the substrate 9 and covers the entire surface of the upper surface 91. Thereby, the treatment of the upper surface 91 of the substrate 9 by the first treatment liquid is performed. Since the upper surface 91 of the substrate 9 is close to the lower surface of the top plate 22 at the processing position, the processing of the substrate 9 by the first processing liquid is performed in a relatively narrow space between the upper surface 91 of the substrate 9 and the lower surface of the top plate 22. Thereby, the processing in the space above the substrate 9 can be suppressed. The diffusion of the liquid atmosphere gas suppresses the temperature drop of the substrate 9 during the treatment.

到達基板9之外周緣的第1處理液，係由該外周緣朝 徑方向外方飛散，流入至杯部4之外側杯空間45。流入至外側杯空間45內之第1處理液，係經由杯排液埠451及腔室排液埠271，被排出至腔室21外且殼體6外之第1排液部96a(參照圖4)。被排出至第1排液部96a之第1處理液係被廢棄。或者視需要將被排出至第1排液部96a之第1處理液回收再利用。 The first treatment liquid reaching the outer periphery of the substrate 9 is formed by the outer periphery The outer side is scattered in the radial direction and flows into the outer cup space 45 of the cup portion 4. The first treatment liquid that has flowed into the outer cup space 45 is discharged to the first liquid discharge portion 96a outside the chamber 21 via the cup drain port 451 and the chamber drain port 271 (refer to the figure). 4). The first treatment liquid discharged to the first liquid discharge portion 96a is discarded. Alternatively, the first treatment liquid discharged to the first liquid discharge portion 96a may be recovered and reused as needed.

在第1處理液所進行之基板9的處理中，腔室21內 之氣體係如上述般，藉由第1排氣機構95a，經由內側杯空間46、杯排氣埠461及大腔室排氣埠281，被排出至腔室21外且殼體6外。 In the processing of the substrate 9 by the first processing liquid, in the chamber 21 As described above, the gas system is discharged to the outside of the chamber 21 and outside the casing 6 via the inner air chamber space 46, the cup exhaust port 461, and the large chamber exhaust port 281 by the first exhaust mechanism 95a.

在來自上部噴嘴51之第1處理液開始供給經過既定 時間後，停止第1處理液之供給，結束由第1處理液所進行之基板9的處理。殘留於基板9上之第1處理液，係藉由基板9之旋轉而由基板9上被去除，經由外側杯空間45、杯排液埠451及腔室排液埠271而排出至第1排液部96a。 The supply of the first treatment liquid from the upper nozzle 51 is started. After the lapse of time, the supply of the first processing liquid is stopped, and the processing of the substrate 9 by the first processing liquid is completed. The first processing liquid remaining on the substrate 9 is removed from the substrate 9 by the rotation of the substrate 9, and is discharged to the first row via the outer cup space 45, the cup drain 451, and the chamber drain 271. Liquid portion 96a.

在第1處理液所進行之處理結束後，藉由控制部10 控制杯旋轉機構7，使杯部4由第1處理狀態進行旋轉，停止於圖6所示方向(步驟S16)。以下說明中，將圖6所示之杯部4之方向(亦即，杯部4之狀態)稱為「第2處理狀態」。 After the processing performed by the first processing liquid is completed, the control unit 10 The cup rotating mechanism 7 is controlled to rotate the cup portion 4 in the first processing state, and stops in the direction shown in Fig. 6 (step S16). In the following description, the direction of the cup portion 4 shown in Fig. 6 (that is, the state of the cup portion 4) is referred to as a "second processing state".

於圖6所示之第2處理狀態中，杯排氣埠461係與第 2腔室排氣埠群286b之大腔室排氣埠281於上下方向重疊。杯排氣埠461之下端與該大腔室排氣埠281之上端，係接近而於上下方向呈對向。藉此，杯排氣埠461與第2腔室排氣埠群286b之大腔室 排氣埠281實質上連接。然後，藉由第2排氣機構95b(參照圖4)，杯部4內之氣體係經由杯排氣埠461及大腔室排氣埠281而排出至腔室21外且殼體6外。又，杯部4外的氣體，亦經由內側杯空間46、杯排氣埠461及大腔室排氣埠281而排出至腔室21外且殼體6外。 In the second processing state shown in FIG. 6, the cup exhaust 埠 461 is the same as the first The large chamber exhaust port 281 of the 2-chamber exhaust manifold group 286b overlaps in the vertical direction. The lower end of the cup exhaust port 461 and the upper end of the large chamber exhaust port 281 are close to each other and face in the up and down direction. Thereby, the large exhaust chamber of the cup exhaust 埠461 and the second chamber exhaust manifold 286b The exhaust port 281 is substantially connected. Then, by the second exhaust mechanism 95b (see FIG. 4), the gas system in the cup portion 4 is discharged to the outside of the chamber 21 via the cup exhaust port 461 and the large chamber exhaust port 281, and outside the casing 6. Further, the gas outside the cup portion 4 is also discharged to the outside of the chamber 21 and outside the casing 6 via the inner cup space 46, the cup exhaust port 461, and the large chamber exhaust port 281.

在杯部4為第2處理狀態時，圖4所示之第2腔室排 氣埠群286b之小腔室排氣埠284、第1腔室排氣埠群286a及第3腔室排氣埠群286c之分別的大腔室排氣埠281及小腔室排氣埠284，係與杯底部42之內側凸部463(參照圖3)於上下方向分別重疊，實質上被閉塞。 When the cup portion 4 is in the second processing state, the second chamber row shown in FIG. The small chamber exhaust port 284 of the air chamber group 286b, the large chamber exhaust port 281 of the first chamber exhaust port group 286a and the third chamber exhaust port group 286c, and the small chamber exhaust port 284 and the small chamber exhaust port 284 The inner convex portion 463 (see FIG. 3) of the bottom portion 42 of the cup overlaps in the vertical direction and is substantially closed.

杯排液埠451係與第2腔室排液埠群276b之中央之 腔室排液埠271於上下方向重疊。杯排液埠451之下端與該腔室排液埠271之上端，係接近而於上下方向呈對向。藉此，杯排液埠451與第2腔室排液埠群276b之腔室排液埠271實質上連接。該腔室排液埠271以外之各腔室排液埠271(參照圖4)係與杯底部42之外側凸部453於上下方向重疊，實質上被閉塞。 The cup drain 埠 451 is in the center of the second chamber draining group 276b The chamber drain 埠 271 overlaps in the up and down direction. The lower end of the cup draining bowl 451 and the upper end of the chamber draining port 271 are close to each other and are opposed in the up and down direction. Thereby, the cup drain port 451 is substantially connected to the chamber drain port 271 of the second chamber drain port group 276b. Each of the chamber discharge ports 271 (see FIG. 4) other than the chamber discharge port 271 is overlapped with the outer side convex portion 453 of the cup bottom portion 42 in the vertical direction, and is substantially closed.

在杯部4成為第2處理狀態時，由處理液供給部5 之上部噴嘴51，對旋轉中之基板9之上面91開始供給第2處理液(步驟S17)。連續供給至基板9之上面91之中央部的第2處理液，係因離心力擴展至基板9之上面91並被覆上面91之全面。藉此，進行由第2處理液對基板9之上面91的處理。 When the cup portion 4 is in the second processing state, the processing liquid supply portion 5 The upper nozzle 51 starts to supply the second processing liquid to the upper surface 91 of the rotating substrate 9 (step S17). The second processing liquid continuously supplied to the central portion of the upper surface 91 of the substrate 9 is expanded to the upper surface 91 of the substrate 9 by the centrifugal force and covers the entire surface of the upper surface 91. Thereby, the treatment of the upper surface 91 of the substrate 9 by the second treatment liquid is performed.

到達基板9之外周緣的第2處理液，係由該外周緣朝 徑方向外方飛散，流入至杯部4之外側杯空間45。流入至外側杯空間45內之第2處理液，係經由杯排液埠451及腔室排液埠271，被 排出至腔室21外且殼體6外之第2排液部96b(參照圖4)。被排出至第2排液部96b之第2處理液係被廢棄。或者視需要將被排出至第2排液部96b之第2處理液回收再利用。 The second processing liquid that reaches the outer periphery of the substrate 9 is formed by the outer periphery The outer side is scattered in the radial direction and flows into the outer cup space 45 of the cup portion 4. The second treatment liquid that has flowed into the outer cup space 45 is discharged through the cup drain 451 and the chamber drain 271. It is discharged to the second liquid discharge portion 96b outside the chamber 21 and outside the casing 6 (see Fig. 4). The second treatment liquid discharged to the second liquid discharge portion 96b is discarded. Alternatively, the second treatment liquid discharged to the second liquid discharge portion 96b may be recovered and reused as needed.

在第2處理液所進行之基板9的處理中，腔室21內 之氣體係如上述般，藉由第2排氣機構95b，經由內側杯空間46、杯排氣埠461及大腔室排氣埠281，被排出至腔室21外且殼體6外。 In the processing of the substrate 9 by the second processing liquid, the inside of the chamber 21 As described above, the gas system is discharged to the outside of the chamber 21 and outside the casing 6 via the inner cup space 46, the cup exhaust port 461, and the large chamber exhaust port 281 by the second exhaust mechanism 95b.

在來自上部噴嘴51之第2處理液開始供給經過既定 時間後，停止第2處理液之供給，結束由第2處理液所進行之基板9的處理。殘留於基板9上之第2處理液，係藉由基板9之旋轉而由基板9上被去除，經由外側杯空間45、杯排液埠451及腔室排液埠271而排出至第2排液部96b。 The supply of the second treatment liquid from the upper nozzle 51 is started. After the time, the supply of the second processing liquid is stopped, and the processing of the substrate 9 by the second processing liquid is completed. The second processing liquid remaining on the substrate 9 is removed from the substrate 9 by the rotation of the substrate 9, and is discharged to the second row via the outer cup space 45, the cup drain 451, and the chamber drain 271. Liquid portion 96b.

在第2處理液所進行之處理結束後，則藉由控制部 10控制杯旋轉機構7，使杯部4由第2處理狀態進行旋轉，停止於圖7所示方向(步驟S18)。以下說明中，將圖7所示之杯部4之方向(亦即，杯部4之狀態)稱為「第3處理狀態」。 After the processing performed by the second treatment liquid is finished, the control unit The cup rotating mechanism 7 is controlled to rotate the cup portion 4 in the second processing state, and stops in the direction shown in Fig. 7 (step S18). In the following description, the direction of the cup portion 4 shown in Fig. 7 (that is, the state of the cup portion 4) is referred to as a "third processing state".

於圖7所示之第3處理狀態中，如上述，杯排氣埠 461係與第3腔室排氣埠群286c之大腔室排氣埠281於上下方向重疊。杯排氣埠461之下端與該大腔室排氣埠281之上端，係接近而於上下方向呈對向。藉此，杯排氣埠461與第3腔室排氣埠群286c之大腔室排氣埠281實質上連接。然後，藉由第3排氣機構95c(參照圖4)，杯部4內之氣體係經由杯排氣埠461及大腔室排氣埠281而排出至腔室21外且殼體6外。又，腔室21內之杯部4外的氣體，亦經由內側杯空間46、杯排氣埠461及大腔室排氣埠281而排出至 腔室21外且殼體6外。 In the third processing state shown in FIG. 7, as described above, the cup exhaust 埠 The large chamber exhaust port 281 of the 461 system and the third chamber exhaust manifold group 286c overlaps in the vertical direction. The lower end of the cup exhaust port 461 and the upper end of the large chamber exhaust port 281 are close to each other and face in the up and down direction. Thereby, the cup exhaust port 461 is substantially connected to the large chamber exhaust port 281 of the third chamber exhaust port group 286c. Then, by the third exhaust mechanism 95c (see FIG. 4), the gas system in the cup portion 4 is discharged to the outside of the chamber 21 via the cup exhaust port 461 and the large chamber exhaust port 281, and outside the casing 6. Moreover, the gas outside the cup portion 4 in the chamber 21 is also discharged to the outside through the inner cup space 46, the cup exhaust port 461, and the large chamber exhaust port 281. Outside the chamber 21 and outside the housing 6.

在杯部4為第3處理狀態時，圖4所示之第3腔室排 氣埠群286c之小腔室排氣埠284、第1腔室排氣埠群286a及第2腔室排氣埠群286b之分別的大腔室排氣埠281及小腔室排氣埠284，係與杯底部42之內側凸部463(參照圖3)於上下方向分別重疊，實質上被閉塞。 When the cup portion 4 is in the third processing state, the third chamber row shown in FIG. The small chamber exhaust port 284 of the air chamber group 286c, the large chamber exhaust port 281 of the first chamber exhaust port group 286a and the second chamber exhaust port group 286b, and the small chamber exhaust port 281 and the small chamber exhaust port 284 The inner convex portion 463 (see FIG. 3) of the bottom portion 42 of the cup overlaps in the vertical direction and is substantially closed.

杯排液埠451係與第3腔室排液埠群276c之中央之 腔室排液埠271於上下方向重疊。杯排液埠451之下端與該腔室排液埠271之上端，係接近而於上下方向呈對向。藉此，杯排液埠451與第3腔室排液埠群276c之腔室排液埠271實質上連接。該腔室排液埠271以外之各腔室排液埠271(參照圖4)係與杯底部42之外側凸部453於上下方向重疊，實質上被閉塞。 The cup drain 埠 451 is in the center of the third chamber draining group 276c The chamber drain 埠 271 overlaps in the up and down direction. The lower end of the cup draining bowl 451 and the upper end of the chamber draining port 271 are close to each other and are opposed in the up and down direction. Thereby, the cup drain port 451 is substantially connected to the chamber drain port 271 of the third chamber drain port group 276c. Each of the chamber discharge ports 271 (see FIG. 4) other than the chamber discharge port 271 is overlapped with the outer side convex portion 453 of the cup bottom portion 42 in the vertical direction, and is substantially closed.

在杯部4成為第3處理狀態時，由處理液供給部5 之上部噴嘴51，對旋轉中之基板9之上面91開始供給第3處理液(步驟S19)。連續供給至基板9之上面91之中央部的第3處理液，係因離心力擴展至基板9之上面91並被覆上面91之全面。藉此，進行由第3處理液對基板9之上面91的處理。 When the cup portion 4 is in the third processing state, the processing liquid supply portion 5 The upper nozzle 51 starts to supply the third processing liquid to the upper surface 91 of the rotating substrate 9 (step S19). The third processing liquid continuously supplied to the central portion of the upper surface 91 of the substrate 9 is expanded by centrifugal force to the upper surface 91 of the substrate 9 and covers the entire surface of the upper surface 91. Thereby, the treatment of the upper surface 91 of the substrate 9 by the third treatment liquid is performed.

到達基板9之外周緣的第3處理液，係由該外周緣朝 徑方向外方飛散，流入至杯部4之外側杯空間45。流入至外側杯空間45內之第3處理液，係經由杯排液埠451及腔室排液埠271，被排出至腔室21外且殼體6外之第3排液部96c(參照圖4)。被排出至第3排液部96c之第3處理液係被廢棄。或者視需要將被排出至第3排液部96c之第3處理液回收再利用。 The third processing liquid that reaches the outer periphery of the substrate 9 is oriented by the outer periphery The outer side is scattered in the radial direction and flows into the outer cup space 45 of the cup portion 4. The third treatment liquid that has flowed into the outer cup space 45 is discharged to the third liquid discharge portion 96c outside the chamber 21 via the cup drain port 451 and the chamber drain port 271 (refer to the figure). 4). The third processing liquid discharged to the third liquid discharge portion 96c is discarded. Alternatively, the third treatment liquid discharged to the third liquid discharge portion 96c may be recovered and reused as needed.

在第3處理液所進行之基板9的處理中，腔室21內 之氣體係如上述般，藉由第3排氣機構95c，經由內側杯空間46、杯排氣埠461及大腔室排氣埠281，被排出至腔室21外且殼體6外。 In the processing of the substrate 9 by the third processing liquid, in the chamber 21 As described above, the gas system is discharged to the outside of the chamber 21 and outside the casing 6 via the inner cup space 46, the cup exhaust port 461, and the large chamber exhaust port 281 by the third exhaust mechanism 95c.

在來自上部噴嘴51之第3處理液開始供給經過既定 時間後，則停止第3處理液之供給，結束由第3處理液所進行之基板9的處理。殘留於基板9上之第3處理液，係藉由基板9之旋轉而由基板9上被去除，經由外側杯空間45、杯排液埠451及腔室排液埠271而排出至第3排液部96c。 The supply of the third treatment liquid from the upper nozzle 51 is started. After the time, the supply of the third processing liquid is stopped, and the processing of the substrate 9 by the third processing liquid is completed. The third processing liquid remaining on the substrate 9 is removed from the substrate 9 by the rotation of the substrate 9, and is discharged to the third row via the outer cup space 45, the cup drain 451, and the chamber drain 271. Liquid portion 96c.

在由基板9上去除第3處理液時，則使基板9、基板 保持部31及頂板22之旋轉停止(步驟S20)。接著，藉由控制部10控制杯旋轉機構7，使杯部4旋轉，成為圖2所示之待機狀態(步驟S21)。步驟S21亦可與步驟S20並行。在杯部4成為待機狀態時，則腔室蓋部26及頂板22上升，位於圖2所示之退避位置。其後，蓋部65朝下方移動而開放搬入口64，由基板處理裝置1搬出基板9(步驟S22)。 When the third processing liquid is removed from the substrate 9, the substrate 9 and the substrate are placed. The rotation of the holding portion 31 and the top plate 22 is stopped (step S20). Next, the cup rotating mechanism 7 is controlled by the control unit 10, and the cup portion 4 is rotated to be in a standby state as shown in Fig. 2 (step S21). Step S21 may also be in parallel with step S20. When the cup portion 4 is in the standby state, the chamber cover portion 26 and the top plate 22 are raised, and are located at the retracted position shown in Fig. 2 . Thereafter, the lid portion 65 is moved downward to open the carry-in port 64, and the substrate processing device 1 carries out the substrate 9 (step S22).

如上述，於基板處理裝置1，在杯部4為待機狀態時， 杯排氣埠461之下端接近腔室底部256，各大腔室排氣埠281之上端及各小腔室排氣埠284之上端接近杯底部42。藉此，即使為第1排氣機構95a、第2排氣機構95b及第3排氣機構95c(參照圖4)所進行的吸引持續的狀態，仍使經由杯排氣埠461的杯部4內之氣體吸引實質上停止。其結果，於基板9之搬出時，可抑制殼體6之外部氣體由開放之搬入口64流入至殼體6內及腔室21內。 As described above, in the substrate processing apparatus 1, when the cup portion 4 is in the standby state, The lower end of the cup exhaust 埠 461 is close to the bottom 256 of the chamber, and the upper end of each large chamber exhaust port 281 and the upper end of each small chamber exhaust port 284 are close to the cup bottom 42. Thereby, even if the suction by the first exhaust mechanism 95a, the second exhaust mechanism 95b, and the third exhaust mechanism 95c (see FIG. 4) continues, the cup portion 4 via the cup exhaust port 461 is still provided. The gas attraction inside is substantially stopped. As a result, when the substrate 9 is carried out, the outside air of the casing 6 can be prevented from flowing into the inside of the casing 6 and the inside of the casing 21 through the open inlet 64.

如以上所說明，基板處理裝置1中，係使周方向排列之複數之大腔室排氣埠281設於腔室底部256。然後，藉由控制部 10控制杯旋轉機構7，使杯排氣埠461選擇性地重疊於複數之大腔室排氣埠281之任一個。在杯排氣埠461重疊於第1腔室排氣埠群286a之大腔室排氣埠281的狀態，藉由第1排氣機構95a，使杯部4內之氣體經由杯排氣埠461及該大腔室排氣埠281被排出至腔室21外且殼體6外。 As described above, in the substrate processing apparatus 1, a plurality of large chamber exhaust ports 281 arranged in the circumferential direction are provided in the chamber bottom portion 256. Then, through the control department The cup rotating mechanism 7 is controlled to selectively overlap the cup exhaust port 461 with any of the plurality of large chamber exhaust ports 281. When the cup exhaust port 461 is superposed on the large chamber exhaust port 281 of the first chamber exhaust port group 286a, the gas in the cup portion 4 is passed through the cup exhaust port 461 by the first exhaust mechanism 95a. The large chamber exhaust port 281 is discharged to the outside of the chamber 21 and outside the casing 6.

又，在杯排氣埠461重疊於第2腔室排氣埠群286b 之大腔室排氣埠281的狀態，藉由第2排氣機構95b，使杯部4內之氣體經由杯排氣埠461及該大腔室排氣埠281被排出至腔室21外且殼體6外。進而，在杯排氣埠461重疊於第3腔室排氣埠群286c之大腔室排氣埠281的狀態，藉由第3排氣機構95c，使杯部4內之氣體經由杯排氣埠461及該大腔室排氣埠281被排出至腔室21外且殼體6外。 Further, the cup exhaust enthalpy 461 is superposed on the second chamber exhaust manifold group 286b. In the state of the large chamber exhaust port 281, the gas in the cup portion 4 is discharged to the outside of the chamber 21 via the cup exhaust port 461 and the large chamber exhaust port 281 by the second exhaust mechanism 95b. Outside the housing 6. Further, in a state where the cup exhaust port 461 is superposed on the large chamber exhaust port 281 of the third chamber exhaust port group 286c, the gas in the cup portion 4 is evacuated via the cup by the third exhaust mechanism 95c. The crucible 461 and the large chamber exhaust port 281 are discharged to the outside of the chamber 21 and outside the casing 6.

如此，基板處理裝置1中，藉由杯旋轉機構7，於腔 室21及殼體6未開放之下使腔室21內且殼體6內之杯部4旋轉，藉此可於第1排氣機構95a、第2排氣機構95b及第3排氣機構95c之間容易切換進行由杯部4之排氣的排氣機構。又，由於可藉由簡單構造之機構切換來自杯部4之排氣的送出目的地(以下稱為「排氣目的地」)，故可使基板處理裝置1之構造簡單化。藉此，相較於在殼體外部設置切換來自杯部之排氣目的地的切換器的情形，可使基板處理裝置1小型化。再來，藉由於腔室21內切換來自杯部4之排氣目的地，則相較於藉由共通配管等將排氣引導至殼體外之切換器的情況，可抑制排氣中之氣體狀或霧狀之處理液的混蝕。 Thus, in the substrate processing apparatus 1, the cup rotating mechanism 7 is used in the cavity. When the chamber 21 and the casing 6 are not opened, the cup portion 4 in the chamber 21 and in the casing 6 is rotated, whereby the first exhaust mechanism 95a, the second exhaust mechanism 95b, and the third exhaust mechanism 95c are provided. It is easy to switch between the exhaust mechanisms that perform the exhaust of the cup portion 4. Moreover, since the delivery destination (hereinafter referred to as "exhaust destination") of the exhaust gas from the cup portion 4 can be switched by a mechanism having a simple structure, the structure of the substrate processing apparatus 1 can be simplified. Thereby, the substrate processing apparatus 1 can be miniaturized as compared with the case where the switch that switches the destination of the exhaust from the cup portion is provided outside the casing. Further, by switching the destination of the exhaust from the cup portion 4 in the chamber 21, the gas in the exhaust gas can be suppressed as compared with the case where the exhaust gas is guided to the outside of the casing by a common pipe or the like. Or the ablation of the misty treatment solution.

如上述，基板處理裝置1中，係使周方向排列之複數 之腔室排液埠271設於腔室底部256。在杯排氣埠461重疊於第1 腔室排氣埠群286a之大腔室排氣埠281的狀態，杯排液埠451係與第1腔室排液埠群276a之中央之腔室排液埠271重疊。然後，流入至杯部4內之第1處理液，係經由杯排液埠451與該腔室排液埠271而被排出至腔室21外且殼體6外的第1排液部96a。 As described above, in the substrate processing apparatus 1, the plural number is arranged in the circumferential direction The chamber drain 271 is disposed at the bottom 256 of the chamber. In the cup exhaust 埠 461 overlaps the first In the state of the large chamber exhaust port 281 of the chamber exhaust manifold group 286a, the cup drain port 451 is overlapped with the chamber drain port 271 of the center of the first chamber drain port group 276a. Then, the first treatment liquid that has flowed into the cup portion 4 is discharged to the first liquid discharge portion 96a outside the chamber 21 via the cup drain port 451 and the chamber drain port 271.

又，在杯排氣埠461重疊於第2腔室排氣埠群286b 之大腔室排氣埠281的狀態，杯排液埠451係與第2腔室排液埠群276b之中央之腔室排液埠271重疊。然後，流入至杯部4內之第2處理液，係經由杯排液埠451與該腔室排液埠271而被排出至腔室21外且殼體6外的第2排液部96b。在杯排氣埠461重疊於第3腔室排氣埠群286c之大腔室排氣埠281的狀態，杯排液埠451係與第3腔室排液埠群276c之中央之腔室排液埠271重疊。然後，流入至杯部4內之第3處理液，係經由杯排液埠451與該腔室排液埠271而被排出至腔室21外且殼體6外的第3排液部96c。 Further, the cup exhaust enthalpy 461 is superposed on the second chamber exhaust manifold group 286b. In the state of the large chamber exhaust port 281, the cup drain port 451 is overlapped with the chamber drain port 271 in the center of the second chamber drain port group 276b. Then, the second treatment liquid that has flowed into the cup portion 4 is discharged to the second liquid discharge portion 96b outside the chamber 21 via the cup drain port 451 and the chamber drain port 271. In a state in which the cup exhaust port 461 is overlapped with the large chamber exhaust port 281 of the third chamber exhaust port group 286c, the cup drain port 451 is in the center of the third chamber drain port group 276c. The liquid helium 271 overlaps. Then, the third treatment liquid that has flowed into the cup portion 4 is discharged to the third liquid discharge portion 96c outside the chamber 21 via the cup drain port 451 and the chamber drain port 271.

如此，基板處理裝置1中，藉由杯旋轉機構7使杯部 4旋轉，藉此可利用1個機構同時進行來自杯部4之排氣目的地的切換、與來自杯部4之處理液的送出目的地(以下稱為「排出目的地」)的切換。其結果，可使基板處理裝置1之構造簡單化，同時可使基板處理裝置1小型化。 Thus, in the substrate processing apparatus 1, the cup portion is made by the cup rotating mechanism 7. When the rotation is performed, the switching of the destination of the processing liquid from the cup portion 4 (hereinafter referred to as "discharge destination") can be simultaneously performed by one mechanism. As a result, the structure of the substrate processing apparatus 1 can be simplified, and the substrate processing apparatus 1 can be downsized.

杯部4中，在杯內側壁部43與杯外側壁部41之間設 有間隔壁44，來自處理液供給部5之處理液係流入至杯外側壁部41與間隔壁44間的外側杯空間45。又，杯排液埠451係位於較間隔壁44下端更靠徑方向外側，杯排氣埠461係位於較間隔壁44下端更靠徑方向內側。藉此，可依簡單構成防止或抑制處理液流入至杯排氣埠461的情形。 In the cup portion 4, between the cup inner side wall portion 43 and the cup outer side wall portion 41 The partition wall 44 and the processing liquid from the processing liquid supply unit 5 flow into the outer cup space 45 between the outer wall portion 41 and the partition wall 44. Further, the cup draining port 451 is located on the outer side in the radial direction from the lower end of the partition wall 44, and the cup exhaust port 461 is located on the inner side in the radial direction from the lower end of the partition wall 44. Thereby, it is possible to prevent or suppress the flow of the treatment liquid into the cup exhaust port 461 by a simple configuration.

於基板處理裝置1，轉子部72係配置於殼體6內， 定子部71係配置於殼體6外。因此，在殼體6之搬入口64呈閉鎖之狀態下，可使杯部4旋轉而變更杯排液埠451及杯排氣埠461的位置。又，亦可使殼體6之內部空間小型化。再者，藉由使定子部71配置於轉子部72周圍，可於殼體6之中央部下方空間，容易配置基板旋轉機構32或下部噴嘴52等其他構成。 In the substrate processing apparatus 1 , the rotor portion 72 is disposed in the casing 6 . The stator portion 71 is disposed outside the casing 6. Therefore, in a state where the inlet 64 of the casing 6 is closed, the cup portion 4 can be rotated to change the positions of the cup drain 451 and the cup exhaust 461. Moreover, the internal space of the casing 6 can also be miniaturized. Further, by arranging the stator portion 71 around the rotor portion 72, another configuration such as the substrate rotating mechanism 32 or the lower nozzle 52 can be easily disposed in a space below the central portion of the casing 6.

如上述，由於轉子部72配置於腔室21內，故可在維 持腔室21密閉之腔室空間的狀態下，使杯部4旋轉而變更杯排液埠451及杯排氣埠461的位置。又，由於定子部71配置於腔室21外，故亦可使腔室空間小型化。 As described above, since the rotor portion 72 is disposed in the chamber 21, it can be in the dimension In a state where the chamber space in which the chamber 21 is sealed is closed, the cup portion 4 is rotated to change the positions of the cup discharge port 451 and the cup exhaust port 461. Moreover, since the stator portion 71 is disposed outside the chamber 21, the chamber space can be miniaturized.

於基板處理裝置1，轉子部72係於殼體6內之腔室 空間中以浮游狀態進行旋轉。因此，不需要於腔室空間中設置支撐轉子部72之構造，而實現基板處理裝置1之小型化及裝置構造的簡單化。又，由於未有處理液附著於該支撐構造的情形，故可防止因所附著之處理液之乾燥所造成的顆粒等發生。再者，由於亦未有因轉子部72與支撐構造間之摩擦而發生顆粒等的情形，故可提升腔室空間及殼體6內之清潔性。 In the substrate processing apparatus 1, the rotor portion 72 is attached to the chamber in the housing 6. The space rotates in a floating state. Therefore, it is not necessary to provide a structure for supporting the rotor portion 72 in the chamber space, and the substrate processing apparatus 1 can be miniaturized and the device structure can be simplified. Further, since the treatment liquid does not adhere to the support structure, generation of particles or the like due to drying of the attached treatment liquid can be prevented. Further, since no particles or the like are generated due to friction between the rotor portion 72 and the support structure, the cleanliness in the chamber space and the casing 6 can be improved.

於基板處理裝置1，在例如於腔室空間填充氮氣的情 況等，有時會要求減小由第1排氣機構95a所進行之來自腔室21的排氣流量、減低氮之消耗量。此時，杯旋轉機構7係由控制部10所控制，如圖8所示般，杯排氣埠461係與第1腔室排氣埠群286a之小腔室排氣埠284於上下方向重疊。杯排氣埠461係接近小腔室排氣埠284並於上下方向呈相對向。藉此，杯排氣埠461實質上連接小腔室排氣埠284。杯部4內之氣體係經由杯排氣埠461及該小 腔室排氣埠284，藉由第1排氣機構95a排出至腔室21外且殼體6外。 In the substrate processing apparatus 1, for example, filling the chamber space with nitrogen In some cases, it may be required to reduce the flow rate of the exhaust gas from the chamber 21 by the first exhaust mechanism 95a and to reduce the consumption of nitrogen. At this time, the cup rotating mechanism 7 is controlled by the control unit 10. As shown in Fig. 8, the cup exhaust port 461 is overlapped with the small chamber exhaust port 284 of the first chamber exhaust port group 286a in the vertical direction. . The cup exhaust 埠 461 is close to the small chamber exhaust 埠 284 and faces in the up and down direction. Thereby, the cup exhaust port 461 is substantially connected to the small chamber exhaust port 284. The gas system in the cup portion 4 passes through the cup exhaust 埠461 and the small The chamber exhaust port 284 is discharged to the outside of the chamber 21 by the first exhaust mechanism 95a and outside the casing 6.

如上述，小腔室排氣埠284之上端面積係小於大腔室 排氣埠281之上端面積。因此，杯部4之方向可藉由由杯排氣埠461與大腔室排氣埠281重疊的狀態、利用杯旋轉機構7而變更為杯排氣埠461與小腔室排氣埠284重疊的狀態，而變更杯排氣埠461與腔室排氣埠的重複面積。如此，由第1排氣機構95a所進行之來自腔室21的排氣流量變小。 As mentioned above, the upper end of the small chamber exhaust 埠 284 is smaller than the large chamber. The area above the exhaust 埠 281. Therefore, the direction of the cup portion 4 can be changed to overlap the cup exhaust port 461 and the small chamber exhaust port 284 by the cup rotating mechanism 7 in a state in which the cup exhaust port 461 is overlapped with the large chamber exhaust port 281. The state of the cup 埠 461 and the chamber exhaust 埠 repeat area. As described above, the flow rate of the exhaust gas from the chamber 21 by the first exhaust mechanism 95a is reduced.

又，杯排液埠451係與第1腔室排液埠群276a之3 個腔室排液埠271中、圖4中之上側之腔室排液埠271重疊。流入至杯部4之外側杯空間45的第1處理液，係經由杯排液埠451及該腔室排液埠271，而排出至腔室21外且殼體6外的第1排液部96a。 Moreover, the cup draining liquid 451 is the same as the first chamber discharging liquid group 276a. The chamber discharge port 271 in the chamber discharge port 271 and the upper side in Fig. 4 overlap. The first treatment liquid that has flowed into the outer cup space 45 of the cup portion 4 is discharged to the first liquid discharge portion outside the chamber 21 via the cup drain port 451 and the chamber drain port 271. 96a.

如此，基板處理裝置1中，杯旋轉機構7由控制部 10所控制，變更杯排氣埠461與腔室排氣埠的重複面積，藉此可配合對基板9之處理內容等而容易變更來自腔室21的排氣流量。又，基板處理裝置1中，杯排氣埠461與腔室排氣埠之重複面積的變更，係將杯排氣埠461選擇性地重疊於第1腔室排氣埠群286a之大腔室排氣埠281(參照圖1)或小腔室排氣埠284。藉此，可於不變更第1排氣機構95a所造成之吸引力，而是依簡單構造變更來自腔室21的排氣流量。 Thus, in the substrate processing apparatus 1, the cup rotating mechanism 7 is controlled by the control unit The control unit 10 controls the overlapping area of the cup exhaust port 461 and the chamber exhaust port, whereby the flow rate of the exhaust gas from the chamber 21 can be easily changed in accordance with the processing contents of the substrate 9. Further, in the substrate processing apparatus 1, the change in the overlapping area between the cup exhaust port 461 and the chamber exhaust port is to selectively overlap the cup exhaust port 461 in the large chamber of the first chamber exhaust port group 286a. Exhaust manifold 281 (see Figure 1) or small chamber exhaust manifold 284. Thereby, the flow rate of the exhaust gas from the chamber 21 can be changed in a simple configuration without changing the suction force caused by the first exhaust mechanism 95a.

圖9為將第1腔室排氣埠群286a之小腔室排氣埠284、及與該小腔室排氣埠284重疊之杯排氣埠461放大表示的圖。如圖9所示，於內部設有小腔室排氣埠284之底部突出部285的上 端面285a，係與上述之上下方向呈略垂直。杯排氣埠461之下端中之中央部的略圓形區域，係與小腔室排氣埠284之上端重複的重複區域461a。杯排氣埠461之下端中，重複區域461a之周圍的圓環狀區域(亦即，重複區域461a除外的區域)係與小腔室排氣埠284上端不重複的非重複區域461b。 Fig. 9 is an enlarged view showing a small chamber exhaust port 284 of the first chamber exhaust port group 286a and a cup exhaust port 461 overlapping the small chamber exhaust port 284. As shown in FIG. 9, the bottom portion 285 of the small chamber exhaust port 284 is provided inside. The end surface 285a is slightly perpendicular to the above-mentioned upper and lower directions. A slightly circular region in the central portion of the lower end of the cup exhaust dam 461 is a repeating region 461a which is repeated with the upper end of the small chamber exhaust port 284. In the lower end of the cup exhaust port 461, the annular region around the repeating region 461a (i.e., the region excluding the repeating region 461a) is a non-repetitive region 461b that does not overlap the upper end of the small chamber exhaust port 284.

杯排氣埠461之非重複區域461b，係與腔室底部256 之底部突出部285之上端面285a接近而上下方向呈相對向。藉此，杯排氣埠461之非重複區域461b實質上被閉塞。因此，在藉由第1排氣機構95a經由杯排氣埠461及小腔室排氣埠284進行排氣時，可防止或抑制杯部4下方之氣體係經由杯排氣埠461之非重複區域461b而被吸引至小腔室排氣埠284內的情形。其結果，可使杯部4內之氣體效率佳地排出。於基板處理裝置1中，可利用底部突出部285之上端面285a的簡單構造，容易閉塞杯排氣埠461之非重複區域461b。 The non-repetitive area 461b of the cup exhaust 埠 461 is connected to the bottom of the chamber 256 The upper end surface 285a of the bottom protruding portion 285 is close to the upper and lower directions. Thereby, the non-repetitive region 461b of the cup exhaust port 461 is substantially blocked. Therefore, when the first exhaust mechanism 95a is exhausted via the cup exhaust port 461 and the small chamber exhaust port 284, it is possible to prevent or suppress the non-repetition of the gas system below the cup portion 4 via the cup exhaust port 461. The region 461b is attracted to the small chamber exhaust dam 284. As a result, the gas in the cup portion 4 can be efficiently discharged. In the substrate processing apparatus 1, the simple structure of the upper end surface 285a of the bottom protruding portion 285 can be utilized, and the non-repetitive region 461b of the cup exhaust port 461 can be easily closed.

尚且，小腔室排氣埠284若設於腔室底部256，則並 不一定需要設於底部突出部285內。即使在省略底部突出部285的情況，杯排氣埠461之非重複區域461b係於小腔室排氣埠284之周圍接近腔室底部256而實質上被閉塞。即使為此情況，亦可如同上述般，將杯部4內之氣體效率佳地排出。 Moreover, if the small chamber exhaust 埠 284 is provided at the bottom 256 of the chamber, then It does not necessarily need to be provided in the bottom protrusion 285. Even in the case where the bottom projection 285 is omitted, the non-repetitive region 461b of the cup exhaust port 461 is substantially occluded near the chamber bottom 256 around the small chamber exhaust port 284. Even in this case, the gas in the cup portion 4 can be efficiently discharged as described above.

又，於基板處理裝置1，有時要求由第1排氣機構95a 所進行之來自腔室21之排氣流量的微調整。此時，杯排氣埠461係由重疊於第1腔室排氣埠群286a之大腔室排氣埠281及小腔室排氣埠284之一者之腔室排氣埠的狀態，於維持杯排氣埠461與該一者之腔室排氣埠之重複，並藉由杯旋轉機構7使杯部4僅旋轉微 小角度(例如5度)。 Further, in the substrate processing apparatus 1, the first exhaust mechanism 95a may be required. The fine adjustment of the exhaust flow from the chamber 21 is performed. At this time, the cup exhaust port 461 is in a state of being exhausted from the chamber of one of the large chamber exhaust port 281 and the small chamber exhaust port 284 of the first chamber exhaust port group 286a. Maintaining the overlap of the cup exhaust 埠 461 with the chamber exhaust enthalpy of the one, and rotating the cup portion 4 only by the cup rotating mechanism 7 Small angle (for example 5 degrees).

圖10為表示杯排氣埠461附近之俯視圖。圖10中， 表示在上述一者之腔室排氣埠為大腔室排氣埠281時，於維持杯排氣埠461與該一者之腔室排氣埠之重複，並使杯部4僅旋轉了微小角度的狀態。圖10中，對杯排氣埠461與大腔室排氣埠281之重複區域加註平行斜線。藉由杯部4之微小角度的旋轉，杯排氣埠461與上述一者之腔室排氣埠(圖10所示之例子中，為大腔室排氣埠281)的重複面積被變更。其結果，可藉由簡單構造對由第1排氣機構95a所進行之來自腔室21的排氣流量進行微調整。 Fig. 10 is a plan view showing the vicinity of the cup exhaust dam 461. In Figure 10, It is shown that when the chamber exhaust port of the above one is the large chamber exhaust port 281, the overlap of the cup exhaust port 461 and the one of the chamber exhaust ports is maintained, and the cup portion 4 is rotated only slightly. The state of the angle. In Fig. 10, a parallel oblique line is added to the overlap region of the cup exhaust port 461 and the large chamber exhaust port 281. By the rotation of the small angle of the cup portion 4, the overlap area of the cup exhaust port 461 and the chamber exhaust port of the above one (in the example shown in Fig. 10, the large chamber exhaust port 281) is changed. As a result, the flow rate of the exhaust gas from the chamber 21 by the first exhaust mechanism 95a can be finely adjusted by a simple configuration.

於圖10所示狀態，杯排氣埠461之下端中與大腔室 排氣埠281之重複區域除外的非重複區域，係與於內部設有上述一者之腔室排氣埠的底部突出部282的上端面(亦即，腔室底部256之一部分)接近並於上下方向相對向，而實質上被閉塞。該底部突出部之上端面係略垂直於上下方向。又，該一者之腔室排氣埠之上端中與杯排氣埠461之重複區域除外的非重複區域，係與於內部設有杯排氣埠461之底部突出部462的下端面(亦即，杯底部42之一部分)接近並於上下方向相對向，而實質上被閉塞。底部突出部462之下端面亦略垂直於上下方向。 In the state shown in Fig. 10, the lower end of the cup exhaust 埠461 and the large chamber The non-repetitive region except the repeating region of the exhaust port 281 is close to the upper end surface of the bottom protrusion portion 282 (i.e., a portion of the bottom portion 256 of the chamber) in which the chamber exhaust port of the above one is disposed. The up and down directions are opposite and substantially blocked. The upper end surface of the bottom protrusion is slightly perpendicular to the up and down direction. Further, the non-repetitive region except the overlapping region of the cup exhaust enthalpy 461 in the upper end of the chamber exhaust enthalpy is provided with the lower end surface of the bottom protruding portion 462 of the cup exhaust sill 461 (also That is, one of the cup bottom portions 42 is close to and opposed in the up and down direction, and is substantially blocked. The lower end surface of the bottom protrusion 462 is also slightly perpendicular to the up and down direction.

基板處理裝置1中，並不一定需要進行藉由使杯排氣 埠461選擇性地重疊於大腔室排氣埠281或小腔室排氣埠284而變更排氣流量。例如，若藉由杯排氣埠461與大腔室排氣埠281之重複區域的面積變更，可實現所需之排氣流量的變更，則上述杯排氣埠461與腔室排氣埠之重複面積的變更，亦可藉由於維持杯排氣埠461與大腔室排氣埠281之重複，並藉由使杯部4旋轉而進行。如 此，可藉由簡單構造對由第1排氣機構95a所進行之來自腔室21的排氣流量進行微調量。 In the substrate processing apparatus 1, it is not necessarily required to exhaust the cup The crucible 461 selectively overlaps the large chamber exhaust port 281 or the small chamber exhaust port 284 to vary the exhaust flow rate. For example, if the area of the overlapping area of the cup exhaust 埠 461 and the large chamber exhaust 埠 281 is changed, the required change in the exhaust flow rate can be achieved, and the cup exhaust 埠 461 and the chamber exhaust 埠The change in the repeating area can also be performed by maintaining the overlap of the cup exhaust 埠 461 and the large chamber exhaust port 281 and by rotating the cup portion 4. Such as Thus, the flow rate of the exhaust gas from the chamber 21 by the first exhaust mechanism 95a can be finely adjusted by a simple configuration.

此時亦與圖10所示狀態同樣地，杯排氣埠461之下端中與大腔室排氣埠281之重複區域除外的非重複區域，係與腔室底部256接近並於上下方向相對向，而實質上被閉塞。又，該大腔室排氣埠281之上端中與杯排氣埠461之重複區域除外的非重複區域，係與杯底部42接近並於上下方向相對向，而實質上被閉塞。如此，可藉由第1排氣機構95a將杯部4內之氣體效率佳地排出。 At this time, similarly to the state shown in Fig. 10, the non-repetitive region except the overlapping region of the large chamber exhaust port 281 in the lower end of the cup exhaust port 461 is close to the bottom portion 256 and is opposed to the upper and lower directions. And was essentially occluded. Further, the non-repetitive region excluding the overlapping region of the cup exhaust port 461 at the upper end of the large chamber exhaust port 281 is substantially close to the cup bottom portion 42 and faces in the vertical direction. In this manner, the gas in the cup portion 4 can be efficiently discharged by the first exhaust mechanism 95a.

更詳言之，杯排氣埠461之上述非重複區域，係由於與於內部形成有大腔室排氣埠281的底部突出部282的上端面接近並於上下方向相對向，而實質上被閉塞。大腔室排氣埠281之上述非重複區域，係由於與於內部形成有杯排氣埠461之底部突出部462的下端面接近並於上下方向相對向，而實質上被閉塞。底部突出部282之上端面、及底部突出部462之下端面係略垂直於上下方向。如此，基板處理裝置1中，可藉由簡單構造實質地閉塞杯排氣埠461之非重複區域、及大腔室排氣埠281之非重複區域。 More specifically, the above-mentioned non-overlapping region of the cup exhaust port 461 is substantially close to the upper end surface of the bottom projecting portion 282 in which the large chamber exhaust port 281 is formed and is opposed in the up and down direction, and is substantially Occlusion. The non-overlapping region of the large chamber exhaust port 281 is substantially closed by being close to the lower end surface of the bottom protruding portion 462 in which the cup exhaust port 461 is formed and facing in the vertical direction. The upper end surface of the bottom protruding portion 282 and the lower end surface of the bottom protruding portion 462 are slightly perpendicular to the up and down direction. As described above, in the substrate processing apparatus 1, the non-overlapping region of the cup exhaust port 461 and the non-repetitive region of the large chamber exhaust port 281 can be substantially closed by a simple configuration.

如上述，說明了由第1處理液進行處理時之第1排氣機構95a的排氣流量變更、及排氣流量的微調整，而關於在由第2處理液進行處理時之第2排氣機構95b的排氣流量變更、及排氣流量的微調整亦相同。又，關於在由第3處理液進行處理時之第3排氣機構95c的排氣流量變更、及排氣流量的微調整亦相同。 As described above, the change in the exhaust gas flow rate of the first exhaust mechanism 95a and the fine adjustment of the exhaust gas flow rate when the first processing liquid is processed, and the second exhaust gas when the second processing liquid is processed are described. The change in the exhaust gas flow rate of the mechanism 95b and the fine adjustment of the exhaust gas flow rate are also the same. Moreover, the change of the exhaust gas flow rate of the third exhaust mechanism 95c and the fine adjustment of the exhaust gas flow rate are also the same when the third processing liquid is processed.

基板處理裝置1中，例如在以第1處理液進行基板9之處理時，有使基板9之旋轉速度降低(或停止基板9之旋轉)而使第1處理液積液於基板9之上面91的情形等、要求由第1排氣機 構95a所進行之由腔室21之排氣停止的情形。此時，由控制器10控制杯旋轉機構7，如圖11所示般，杯排液埠451係與於第1腔室排液埠群276a之3個腔室排液埠271中、圖4中下側之腔室排液埠271重疊。於此狀態下，杯部4之外側杯空間45內之第1處理液，係經由杯排液埠451及該腔室排液埠271而排出至腔室21且殼體6外之第1排液部96a。 In the substrate processing apparatus 1, for example, when the substrate 9 is processed by the first processing liquid, the rotation speed of the substrate 9 is lowered (or the rotation of the substrate 9 is stopped), and the first processing liquid is accumulated on the upper surface of the substrate 91. Situation, etc., required by the first exhaust The configuration by the structure 95a is stopped by the exhaust of the chamber 21. At this time, the cup rotating mechanism 7 is controlled by the controller 10, as shown in Fig. 11, the cup draining liquid 451 is connected to the three chamber draining ports 271 of the first chamber draining group 276a, Fig. 4 The chamber drain 271 of the lower middle side overlaps. In this state, the first treatment liquid in the outer cup space 45 of the cup portion 4 is discharged to the chamber 21 via the cup drain port 451 and the chamber drain port 271, and the first row outside the casing 6 Liquid portion 96a.

又，杯排氣埠461係位於由第1腔室排氣埠群286a 之大腔室排氣埠281及小腔室排氣埠284於周方向呈離間的位置，重疊於第1腔室排氣埠群286a之內側凸部283。杯排氣埠461之下端係接近內側凸部283之上端面並於上下方向呈相對向，實質上被閉塞。藉此，使由第1排氣機構95a進行之腔室21內的排氣實質上停止。 Moreover, the cup exhaust 埠 461 is located in the first chamber exhaust manifold 286a The large chamber exhaust port 281 and the small chamber exhaust port 284 are spaced apart from each other in the circumferential direction, and are superposed on the inner convex portion 283 of the first chamber exhaust port group 286a. The lower end of the cup exhaust port 461 is close to the upper end surface of the inner convex portion 283 and faces in the up-and-down direction, and is substantially blocked. Thereby, the exhaust gas in the chamber 21 by the first exhaust mechanism 95a is substantially stopped.

如此，基板處理裝置1中，藉由控制部10控制杯旋 轉機構7，使杯排氣埠461選擇性地重疊於第1腔室排氣埠群286a之大腔室排氣埠281(亦可為小腔室排氣埠284)或內側凸部283。藉此，在經由杯排液埠451將第1處理液排出至第1排液部96a時，可容易選擇由第1排氣機構95a進行之腔室21內之排氣狀態與排氣停止狀態。 Thus, in the substrate processing apparatus 1, the cup rotation is controlled by the control unit 10. The turning mechanism 7 selectively overlaps the cup exhaust port 461 with the large chamber exhaust port 281 (which may also be a small chamber exhaust port 284) or the inner convex portion 283 of the first chamber exhaust port group 286a. By this means, when the first treatment liquid is discharged to the first liquid discharge portion 96a via the cup discharge port 451, the exhaust state and the exhaust gas stop state in the chamber 21 by the first exhaust mechanism 95a can be easily selected. .

如上述，說明了由第1處理液進行處理時第1排氣機 構95a之排氣的停止，而關於由第2處理液進行處理時第2排氣機構95b之排氣的停止亦相同。又，關於由第3處理液進行處理時第3排氣機構95c之排氣的停止亦相同。 As described above, the first exhauster when the first treatment liquid is processed is described. The stop of the exhaust of the structure 95a is the same, and the stop of the exhaust of the second exhaust mechanism 95b when the second treatment liquid is processed is also the same. Moreover, the stop of the exhaust of the third exhaust mechanism 95c at the time of processing by the third processing liquid is also the same.

基板處理裝置1中，亦可變更杯底部42及腔室下面 部251之形狀。圖12為表示較佳之杯部4a的仰視圖。圖13為表 示較佳之腔室21a之腔室下面部251的俯視圖。圖13中，與圖4同樣地以虛線一併表示杯部4a之杯外側壁部41、間隔壁44及杯內側壁部43。 In the substrate processing apparatus 1, the cup bottom 42 and the underside of the chamber can also be changed. The shape of the portion 251. Fig. 12 is a bottom view showing a preferred cup portion 4a. Figure 13 is a table A top view of the lower chamber portion 251 of the preferred chamber 21a is shown. In Fig. 13, the cup outer wall portion 41, the partition wall 44, and the cup inner side wall portion 43 of the cup portion 4a are collectively shown by a broken line in the same manner as Fig. 4.

圖12所示之杯部4a中，與圖3所示之杯部4之底部 突出部462形狀相異的底部突出部462a，係設於杯底部42並朝下方突出。杯部4a之其他構造係與圖3所示之杯部4幾乎相同，以下說明中加註相同符號。如圖12所示，底部突出部462a係於周方向較長、以中心軸J1為中心之略圓弧狀。底部突出部462a係涵括圖3所示之底部突出部462、及與底部突出部462之周方向兩側相鄰接之2個內側凸部463所配置的周方向的約全體區域。底部突出部462a之下端面462b係略垂直於上下方向。杯排氣埠461係於底部突出部462a之周方向之略中央形成於底部突出部462a內。杯排氣埠461具有與圖3所示之杯排氣埠461相同的尺寸及形狀。 In the cup portion 4a shown in Fig. 12, the bottom of the cup portion 4 shown in Fig. 3 The bottom protruding portion 462a having a different shape of the protruding portion 462 is attached to the bottom portion 42 of the cup and protrudes downward. The other structure of the cup portion 4a is almost the same as that of the cup portion 4 shown in Fig. 3, and the same reference numerals are attached to the following description. As shown in FIG. 12, the bottom protruding portion 462a is formed in a slightly arc shape in the circumferential direction and centered on the central axis J1. The bottom protruding portion 462a includes a bottom protruding portion 462 shown in FIG. 3 and a whole region in the circumferential direction in which two inner convex portions 463 adjacent to both sides in the circumferential direction of the bottom protruding portion 462 are disposed. The lower end surface 462b of the bottom protruding portion 462a is slightly perpendicular to the up and down direction. The cup exhaust 埠 461 is formed in the bottom protruding portion 462a at a substantially center in the circumferential direction of the bottom protruding portion 462a. The cup exhaust dam 461 has the same size and shape as the cup exhaust dam 461 shown in FIG.

圖13所示之腔室21a中，與圖4所示之腔室21之底 部突出部272及腔室排液埠271形狀相異的底部突出部272a及腔室排液埠271a，係設於腔室下面部251之腔室底部256。腔室21a之其他構造係與圖3所示之腔室21幾乎相同，以下說明中加註相同符號。圖13所示例子中，3個底部突出部272a、及3個腔室排液埠271a係設於腔室下面部251之腔室底部256。3個腔室排液埠271a係分別配置於圖3所示之腔室排液埠群276a~276c之位置。於3個腔室排液埠271a，分別連接第1排液部96a、第2排液部96b及第3排液部96c。 In the chamber 21a shown in Fig. 13, and the bottom of the chamber 21 shown in Fig. 4. The protrusion portion 272 and the bottom protrusion portion 272a and the chamber discharge port 271a having different shapes of the chamber discharge port 271 are provided at the chamber bottom portion 256 of the chamber lower portion 251. The other structure of the chamber 21a is almost the same as that of the chamber 21 shown in Fig. 3, and the same reference numerals are attached to the following description. In the example shown in Fig. 13, three bottom protrusions 272a and three chamber drains 271a are provided in the chamber bottom 256 of the chamber lower portion 251. The three chamber drains 271a are respectively arranged in the figure. The position of the chamber draining group 276a to 276c shown in FIG. The three liquid discharge ports 271a are connected to the first liquid discharge portion 96a, the second liquid discharge portion 96b, and the third liquid discharge portion 96c.

圖13所示，各底部突出部272a及各腔室排液埠271a 係於周方向較長、以中心軸J1為中心之略圓弧狀。各底部突出部 272a係涵括圖3所示之1個腔室排液埠群之3個底部突出部272所配置的周方向的約全體區域。各腔室排液埠271a係分別配置於1個腔室排液埠群之3個腔室排液埠271所配置的周方向的約全體區域。腔室排液埠271a之周方向之長度係較圖12所示之杯排液埠451之周方向之長度更長。 As shown in FIG. 13, each bottom protrusion 272a and each chamber discharge port 271a It is slightly arcuate in the circumferential direction and centered on the central axis J1. Bottom protrusion The 272a includes an entire area in the circumferential direction in which the three bottom protruding portions 272 of one of the chamber discharge groups shown in FIG. 3 are disposed. Each of the chamber discharge ports 271a is disposed in approximately the entire area in the circumferential direction in which the three chamber discharge ports 271 of the one chamber discharge group are disposed. The length of the circumferential direction of the chamber drain 埠 271a is longer than the length of the circumferential direction of the cup drain 451 shown in FIG.

在杯排氣埠461於上下方向重疊於第1腔室排氣埠群 286a之大腔室排氣埠281的狀態，杯排液埠451係於上下方向重疊於第1排液部96a所連接的腔室排液埠271a的周方向之中央部。 以下，將此狀態稱為「大流量排氣狀態」。 The cup exhaust 埠 461 is superposed on the first chamber exhaust enthalpy in the vertical direction In the state of the large chamber exhaust port 281 of 286a, the cup drain port 451 is superposed on the center portion in the circumferential direction of the chamber drain port 271a to which the first drain portion 96a is connected in the vertical direction. Hereinafter, this state is referred to as "large flow exhaust state".

於大流量排氣狀態，杯部4a內之氣體係經由杯排氣 埠461及上述大腔室排氣埠281，藉由第1排氣機構95a排出至腔室21a外且殼體6外。又，杯部4a之外側杯空間45內之第1處理液，係經由杯排液埠451及腔室排液埠271a而排出至第1排液部96a。又，第1腔室排氣埠群286a之小腔室排氣埠284之上端，由於接近擴展至杯排氣埠461周圍之底部突出部462a之下端面462b並於上下方向相對向，故實質上被閉塞。 In the large flow exhaust state, the gas system in the cup portion 4a is exhausted via the cup The crucible 461 and the large chamber exhaust port 281 are discharged to the outside of the chamber 21a and outside the casing 6 by the first exhaust mechanism 95a. Moreover, the first processing liquid in the outer cup space 45 of the cup portion 4a is discharged to the first liquid discharge portion 96a via the cup draining liquid 451 and the chamber liquid discharging port 271a. Further, the upper end of the small chamber exhaust port 284 of the first chamber exhaust port group 286a is close to the lower end surface 462b of the bottom protrusion portion 462a around the cup exhaust port 461 and is opposed in the up and down direction, so the essence It was blocked.

杯部4a係在維持杯排液埠451與上述腔室排液埠 271a之重複，並藉由由大流量排氣狀態進行旋轉，而使杯排氣埠461移動至由大腔室排氣埠281於周方向偏離的位置。例如，在維持杯排液埠451與上述腔室排液埠271a之重複，並使杯排氣埠461成為與第1腔室排氣埠群286a之小腔室排氣埠284於上下方向重疊的狀態。以下，將該狀態稱為「小流量排氣狀態」。 The cup portion 4a is in the maintenance cup draining port 451 and the chamber is drained. The 271a is repeated, and by rotating by the large-flow exhaust state, the cup exhaust port 461 is moved to a position deviated in the circumferential direction by the large-chamber exhaust port 281. For example, the cup discharge hopper 451 is overlapped with the chamber discharge port 271a, and the cup exhaust port 461 is overlapped with the small chamber exhaust port 284 of the first chamber exhaust port group 286a in the vertical direction. status. Hereinafter, this state is referred to as "small flow exhaust state".

於小流量排氣狀態，杯部4a內之氣體係經由杯排氣 埠461及上述小腔室排氣埠284，藉由第1排氣機構95a排出至腔 室21a外。小流量排氣狀態之來自腔室21a的排氣流量，係較小於大流量排氣狀態之來自腔室21a的排氣流量。於小流量排氣狀態，係與大流量排氣狀態同樣地，杯部4a之外側杯空間45內之第1處理液，係經由杯排液埠451及腔室排液埠271a而排出至第1排液部96a。又，第1腔室排氣埠群286a之大腔室排氣埠281之上端，係與擴展至杯排氣埠461周圍之底部突出部462a之下端面462b接近並於上下方向相對向，故實質上被閉塞。 In the small flow exhaust state, the gas system in the cup portion 4a is exhausted via the cup The crucible 461 and the small chamber exhaust manifold 284 are discharged to the chamber by the first exhaust mechanism 95a. Outside the chamber 21a. The flow rate of the exhaust gas from the chamber 21a in the small flow exhaust state is smaller than the flow rate of the exhaust gas from the chamber 21a in the large flow exhaust state. In the small-flow exhaust state, the first processing liquid in the outer cup space 45 of the cup portion 4a is discharged to the first portion via the cup draining port 451 and the chamber draining port 271a in the same manner as the large-flow exhausting state. 1 draining portion 96a. Further, the upper end of the large chamber exhaust port 281 of the first chamber exhaust port group 286a is close to the lower end surface 462b of the bottom protruding portion 462a extending around the cup exhaust port 461, and is opposed to each other in the up and down direction. It is essentially occluded.

杯部4a係在維持杯排液埠451與上述腔室排液埠 271a之重複，並藉由由大流量排氣狀態或小流量排氣狀態進行旋轉，而使杯排氣埠461移動至由大腔室排氣埠281及小腔室排氣埠284於周方向偏離的位置。例如，在維持杯排液埠451與上述腔室排液埠271a之重複，並使杯排氣埠461成為與第1腔室排氣埠群286a之內側凸部283於上下方向重疊的狀態。以下，將該狀態稱為「排氣停止狀態」。 The cup portion 4a is in the maintenance cup draining port 451 and the chamber is drained. 271a is repeated, and by rotating from a large flow exhaust state or a small flow exhaust state, the cup exhaust port 461 is moved to the circumferential direction by the large chamber exhaust port 281 and the small chamber exhaust port 284. The position of the deviation. For example, the cup discharge port 451 is overlapped with the chamber discharge port 271a, and the cup exhaust port 461 is in a state of being overlapped with the inner convex portion 283 of the first chamber exhaust port group 286a in the vertical direction. Hereinafter, this state is referred to as "exhaust stop state".

於排氣停止狀態，杯排氣埠461之下端係與第1腔室 排氣埠群286a之內側凸部283之上端面接近並於上下方向相對向，而實質上被閉塞。又，第1腔室排氣埠群286a之大腔室排氣埠281之上端，係與擴展至杯排氣埠461周圍之底部突出部462a之下端面462b接近並於上下方向相對向，而實質上被閉塞。第1腔室排氣埠群286a之小腔室排氣埠284之上端，係與在周方向相鄰接於底部突出部462a之內側凸部463之下端面接近並於上下方向相對向，而實質上被閉塞。藉此，由第1排氣機構95a進行之經由杯排氣埠461之杯部4a內的氣體吸引(亦即，由第1排氣機構95a進行之來自腔室21a的排氣)實質上停止。於排氣停止狀態，係與大 流量排氣狀態及小流量排氣狀態同樣地，杯部4a之外側杯空間45內之第1處理液，係經由杯排液埠451及腔室排液埠271a而排出至第1排液部96a。 In the exhaust stop state, the lower end of the cup exhaust 埠461 is connected to the first chamber The upper end surface of the inner convex portion 283 of the exhaust enthalpy group 286a approaches and is opposed to the vertical direction, and is substantially blocked. Further, the upper end of the large chamber exhaust port 281 of the first chamber exhaust port group 286a is close to the lower end surface 462b of the bottom protruding portion 462a extending around the cup exhaust port 461, and is opposed to the up and down direction. It is essentially occluded. The upper end of the small chamber exhaust port 284 of the first chamber exhaust manifold group 286a is adjacent to the lower end surface of the inner convex portion 463 adjacent to the bottom protruding portion 462a in the circumferential direction and is opposed to the upper and lower directions. It is essentially occluded. Thereby, the gas suction in the cup portion 4a via the cup exhaust port 461 by the first exhaust mechanism 95a (that is, the exhaust gas from the chamber 21a by the first exhaust mechanism 95a) is substantially stopped. . In the exhaust stop state, the system is large In the flow discharge state and the small flow discharge state, the first treatment liquid in the outer cup space 45 of the cup portion 4a is discharged to the first liquid discharge portion via the cup discharge port 451 and the chamber discharge port 271a. 96a.

在設置圖12及圖13所示之杯部4a及腔室21a的情 況，可於持續第1處理液朝第1排液部96a之排出之下，容易切換第1排氣機構95a進行之排氣狀態與排氣停止狀態。又，於第1排氣機構95a進行之排氣狀態中，藉由選擇性地切換大流量排氣狀態及小流量排氣狀態，亦可容易變更排氣流量。再者，如上述般，可藉由簡單構造實現排氣停止狀態。 In the case where the cup portion 4a and the chamber 21a shown in Figs. 12 and 13 are provided In the case where the first processing liquid is discharged to the first liquid discharge portion 96a, the exhaust state and the exhaust gas stop state by the first exhaust mechanism 95a can be easily switched. Further, in the exhaust state by the first exhaust mechanism 95a, the exhaust flow rate can be easily changed by selectively switching between the large flow rate exhaust state and the small flow rate exhaust state. Further, as described above, the exhaust gas stop state can be realized by a simple configuration.

如上述般，說明了在設置杯部4a及腔室21a的情況， 於由第1處理液所進行之處理時第1排氣機構95a之大流量排氣狀態、小流量排氣狀態及排氣停止狀態，而關於在由第2處理液所進行之處理時第2排氣機構95b之大流量排氣狀態、小流量排氣狀態及排氣停止狀態亦相同。又，關於在由第3處理液所進行之處理時第3排氣機構95c之大流量排氣狀態、小流量排氣狀態及排氣停止狀態亦相同。 As described above, the case where the cup portion 4a and the chamber 21a are provided is explained. The second flow rate exhaust state, the small flow rate exhaust state, and the exhaust stop state of the first exhaust mechanism 95a during the process by the first process liquid, and the second process when the process is performed by the second process liquid The large-flow exhaust state, the small-flow exhaust state, and the exhaust stop state of the exhaust mechanism 95b are also the same. Moreover, the large-flow exhaust state, the small-flow exhaust state, and the exhaust stop state of the third exhaust mechanism 95c at the time of the processing by the third processing liquid are also the same.

圖14為表示第2實施形態之基板處理裝置1a的剖面 圖。基板處理裝置1a係具備與圖1所示杯部4及腔室21形狀相異的杯部4b及腔室21b。基板處理裝置1a進一步具備升降機構33。 除了此等點之外，基板處理裝置1a係具有與圖1所示之基板處理裝置1大致相同的構造。以下說明中，基板處理裝置1之各構成相對應的基板處理裝置1a的構成加註相同符號。 Figure 14 is a cross section showing the substrate processing apparatus 1a of the second embodiment. Figure. The substrate processing apparatus 1a includes a cup portion 4b and a chamber 21b which are different in shape from the cup portion 4 and the chamber 21 shown in Fig. 1 . The substrate processing apparatus 1a further includes an elevating mechanism 33. In addition to these points, the substrate processing apparatus 1a has substantially the same structure as the substrate processing apparatus 1 shown in FIG. In the following description, the configuration of the substrate processing apparatus 1a corresponding to each configuration of the substrate processing apparatus 1 is denoted by the same reference numeral.

如圖14所示，杯部4b更具備在徑方向位於間隔壁 44與杯外側壁部41之間的1個間隔壁47。以下說明中，為了容易 區別間隔壁44、47，而將間隔壁44、47分別稱為「第1間隔壁44」及「第2間隔壁47」。第2間隔壁47係以中心軸J1為中心之略圓筒狀。第2間隔壁47係由杯底部42朝上方擴展。第2間隔壁47係由杯底部42隨著朝向上方而擴展至徑方向外側，在較上下方向之既定位置更上側，係略平行於中心軸J1而朝上方擴展。杯排液埠451係位於較第2間隔壁47之下端更靠徑方向內側，且較第1間隔壁44之下端更靠徑方向外側。以下說明中，將杯部4b之第1間隔壁44與第2間隔壁47之間的空間稱為「第1外側杯空間45a」。 又，將杯部4b之第2間隔壁47與杯外側壁部41之間的空間稱為「第2外側杯空間45b」。 As shown in FIG. 14, the cup portion 4b is further provided with a partition wall in the radial direction. A partition wall 47 between the outer wall portion 41 and the outer wall portion 41. In the following description, for the sake of easy The partition walls 44 and 47 are distinguished, and the partition walls 44 and 47 are referred to as "first partition wall 44" and "second partition wall 47", respectively. The second partition wall 47 has a substantially cylindrical shape centering on the central axis J1. The second partition wall 47 is expanded upward from the cup bottom portion 42. The second partition wall 47 is extended to the outer side in the radial direction as the cup bottom portion 42 is upward, and is higher than the predetermined position in the vertical direction, and extends upward slightly parallel to the central axis J1. The cup draining bowl 451 is located on the inner side in the radial direction from the lower end of the second partition wall 47, and is located radially outward of the lower end of the first partition wall 44. In the following description, the space between the first partition wall 44 of the cup portion 4b and the second partition wall 47 is referred to as "the first outer cup space 45a". Moreover, the space between the second partition wall 47 of the cup portion 4b and the cup outer wall portion 41 is referred to as "second outer cup space 45b".

圖15為表示杯部4b之仰視圖。如圖14及圖15所示， 於杯部4b之杯底部42，在由杯排液埠451呈離間之位置設有其他之杯排液埠457。杯排液埠457係位於較第2間隔壁47之下端更靠徑方向外側，且較杯外側壁部41之下端更靠徑方向內側。亦即，杯排液埠457係位於較杯排液埠451更靠徑方向外側。以下說明中，為了容易區別杯排液埠451、457，而將杯排液埠451、457分別稱為「內杯排液埠451」及「外杯排液埠457」。 Fig. 15 is a bottom view showing the cup portion 4b. As shown in Figure 14 and Figure 15, At the cup bottom 42 of the cup portion 4b, another cup draining pot 457 is provided at a position separated from the cup draining bowl 451. The cup draining cymbal 457 is located further outward in the radial direction than the lower end of the second partition wall 47, and is more radially inward than the lower end of the cup outer wall portion 41. That is, the cup draining liquid 457 is located on the outer side in the radial direction of the cup draining liquid 451. In the following description, in order to easily distinguish the cup draining ports 451 and 457, the cup draining ports 451 and 457 are referred to as "inner cup draining port 451" and "outer cup draining port 457", respectively.

外杯排液埠457之下端的尺寸及形狀，係例如與內杯 排液埠451之下端的尺寸及形狀約相同。換言之，外杯排液埠457之下端的面積係與內杯排液埠451之下端的面積約相等。圖14及圖15中，外杯排液埠457與內杯排液埠451係排列於徑方向，但亦可使外杯排液埠457與內杯排液埠451配置於在周方向彼此相異的位置。 The size and shape of the lower end of the outer cup draining 457 is, for example, the inner cup The size and shape of the lower end of the drain 451 are about the same. In other words, the area of the lower end of the outer cup drain 457 is approximately equal to the area of the lower end of the inner cup drain 451. In Fig. 14 and Fig. 15, the outer cup discharge port 457 and the inner cup drain port 451 are arranged in the radial direction, but the outer cup drain port 457 and the inner cup drain port 451 may be arranged in the circumferential direction. Different location.

圖16為表示腔室21b之腔室下面部251之仰視圖。 圖16中，以虛線一併表示杯部4b之杯外側壁部41、第1間隔壁44及杯內側壁部43。如圖14及圖16所示，於腔室21b之腔室下面部251之腔室底部256，設有位於較複數之腔室排液埠271更靠徑方向外側的其他腔室排液埠277。以下說明中，為了容易區別腔室排液埠271、277，而將腔室排液埠271、277分別稱為「內腔室排液埠271」及「外腔室排液埠277」。 Figure 16 is a bottom plan view showing the lower portion 251 of the chamber of the chamber 21b. In Fig. 16, the cup outer wall portion 41, the first partition wall 44, and the cup inner side wall portion 43 of the cup portion 4b are collectively indicated by broken lines. As shown in FIG. 14 and FIG. 16, in the chamber bottom 256 of the chamber lower portion 251 of the chamber 21b, other chamber discharges 277 are provided on the outer side of the plurality of chamber discharge ports 271. . In the following description, in order to easily distinguish the chamber drain ports 271 and 277, the chamber drain ports 271 and 277 are referred to as "inner chamber drain port 271" and "outer chamber drain port 277", respectively.

外腔室排液埠277係位於與複數之內腔室排液埠271 於周方向相異的位置。外腔室排液埠277之下端的尺寸及形狀，係例如與內腔室排液埠271之下端的尺寸及形狀約相同。換言之，外腔室排液埠277之下端的面積係與內腔室排液埠271之下端的面積約相等。外腔室排液埠277係連接至由第1排液部96a、第2排液部96b及第3排液部96c獨立之其他排液部(以下稱為「第4排液部96d」)。 The external chamber drain 埠 277 is located in the inner chamber of the plurality of chambers. Locations that differ in the direction of the week. The size and shape of the lower end of the outer chamber drain 277 is, for example, about the same as the size and shape of the lower end of the inner chamber drain 271. In other words, the area of the lower end of the outer chamber drain 277 is approximately equal to the area of the lower end of the inner chamber drain 271. The outer chamber draining port 277 is connected to another draining portion (hereinafter referred to as "fourth draining portion 96d") which is independent of the first drain portion 96a, the second drain portion 96b, and the third drain portion 96c. .

於腔室下面部251之腔室底部256，除了圖4所示之 3個大腔室排氣埠281之外，設有另1個大腔室排氣埠281。該另1個大腔室排氣埠281，係連接至由第1排氣機構95a、第2排氣機構95b及第3排氣機構95c獨立之其他排氣機構(以下稱為「第4排氣機構95d」)。該大腔室排氣埠281係與外腔室排液埠277挾持著中心軸J1而位於相反側，與其他之大腔室排氣埠281及複數之小腔室排氣埠284排列於周方向。 At the bottom 256 of the chamber at the lower portion 251 of the chamber, except as shown in FIG. In addition to the three large chamber exhaust ports 281, another large chamber exhaust port 281 is provided. The other large chamber exhaust port 281 is connected to another exhaust mechanism independent of the first exhaust mechanism 95a, the second exhaust mechanism 95b, and the third exhaust mechanism 95c (hereinafter referred to as "fourth row" Air mechanism 95d"). The large chamber exhaust port 281 and the outer chamber drain port 277 hold the central axis J1 on the opposite side, and the other large chamber exhaust ports 281 and the plurality of small chamber exhaust ports 284 are arranged in the circumference. direction.

於圖14所示例子中，外杯排液埠457係與外腔室排 液埠277於上下方向重疊。外杯排液埠457之下端係與外腔室排液埠277之上端接近而於上下方向重疊。藉此，外杯排液埠457與外腔室排液埠277實質上相連接。外杯排液埠457係經由外腔室排液 埠277而連接於第4排液部96d。又，內杯排液埠451係與腔室底部256之外側凸部273於上下方向重疊，故實質上被閉塞。 In the example shown in Figure 14, the outer cup drain 埠 457 series and the outer chamber row The liquid helium 277 overlaps in the up and down direction. The lower end of the outer cup draining port 457 is close to the upper end of the outer chamber draining port 277 and overlaps in the up and down direction. Thereby, the outer cup drain port 457 is substantially connected to the outer chamber drain port 277. The outer cup drain 埠 457 is drained through the outer chamber The crucible 277 is connected to the fourth liquid discharge portion 96d. Further, since the inner cup drain 451 is overlapped with the outer convex portion 273 of the chamber bottom portion 256 in the vertical direction, it is substantially blocked.

於圖14所示例子中，杯排氣埠461係與連接於第4 排氣機構95d之上述大腔室排氣埠281於上下方向重疊。杯排氣埠461之下端係與該大腔室排氣埠281之上端接近並於上下方向呈對向。藉此，杯排氣埠461與該大腔室排氣埠281實質上相連接。杯排氣埠461係經由大腔室排氣埠281而連接至第4排氣機構95d。 In the example shown in Fig. 14, the cup exhaust 埠 461 is connected to the fourth The large chamber exhaust port 281 of the exhaust mechanism 95d overlaps in the vertical direction. The lower end of the cup exhaust port 461 is close to the upper end of the large chamber exhaust port 281 and faces in the up and down direction. Thereby, the cup exhaust port 461 is substantially connected to the large chamber exhaust port 281. The cup exhaust port 461 is connected to the fourth exhaust mechanism 95d via the large chamber exhaust port 281.

升降機構33係使基板保持部31相對於杯部4b於上 下方向相對移動。於圖14所示例子中，升降機構33係鄰接於基板旋轉機構32而配置。藉由升降機構33，使基板旋轉機構32於上下方向移動，而使基板9與基板保持部31一起於上下方向移動。基板9可在圖14所示位置、與圖17所示位置之間於上下方向移動。 以下說明中，將圖17所示之基板9相對於杯部4b的相對位置稱為「第1位置」，將圖14所示之基板9相對於杯部4b之相對位置稱為「第2位置」。第2位置係較第1位置更上方。 The elevating mechanism 33 is configured such that the substrate holding portion 31 is opposed to the cup portion 4b. The lower direction moves relatively. In the example shown in FIG. 14, the elevating mechanism 33 is disposed adjacent to the substrate rotating mechanism 32. The substrate rotating mechanism 32 is moved in the vertical direction by the elevating mechanism 33, and the substrate 9 and the substrate holding portion 31 are moved in the vertical direction. The substrate 9 is movable in the vertical direction between the position shown in FIG. 14 and the position shown in FIG. In the following description, the relative position of the substrate 9 shown in FIG. 17 with respect to the cup portion 4b is referred to as "first position", and the relative position of the substrate 9 with respect to the cup portion 4b shown in FIG. 14 is referred to as "second position". "." The second position is above the first position.

圖17中，杯部4b之方向係與圖14所示方向相異， 與圖1所示方向相同。具體而言，杯排氣埠461係與連接於第1排氣機構95a之大腔室排氣埠281於上下方向重疊。內杯排液埠451係與連接於第1排液部96a之內腔室排液埠271於上下方向重疊。 另一方面，外杯排液埠457係與在腔室下面部251之腔室底部256所設置之外側凸部279於上下方向重疊，而實質上被閉塞。又，連接於第4排氣機構95d之大腔室排氣埠281(參照圖16)係與杯部4b之內側凸部463於上下方向重疊，而實質上被閉塞。 In Fig. 17, the direction of the cup portion 4b is different from the direction shown in Fig. 14, The same direction as shown in Figure 1. Specifically, the cup exhaust port 461 is overlapped with the large chamber exhaust port 281 connected to the first exhaust mechanism 95a in the vertical direction. The inner cup drain port 451 is overlapped with the inner chamber drain port 271 connected to the first drain portion 96a in the vertical direction. On the other hand, the outer cup discharge port 457 is substantially overlapped with the outer side convex portion 279 provided in the chamber bottom portion 256 of the chamber lower portion 251 in the vertical direction. Further, the large chamber exhaust port 281 (see FIG. 16) connected to the fourth exhaust mechanism 95d is substantially overlapped with the inner convex portion 463 of the cup portion 4b in the vertical direction.

如圖17所示，在基板9位於第1位置之狀態，頂板 22之板側壁部225之下端部係位於較杯部4b之第2間隔壁47更靠徑方向內側，與第2間隔壁47於徑方向重疊。因此，由處理液供給部5供給至基板9上之第1處理液，係流入第1外側杯空間45a。 第1外側杯空間45a內之第1處理液，係經由內杯排液埠451及內腔室排液埠271而排出至第1排液部96a。於基板處理裝置1a，由第2處理液進行之基板9之處理時，亦同樣地基板9位於第1位置，第2處理液流入至第1外側杯空間45a而排出至第2排液部96b。 由第3處理液進行之基板9之處理時，亦同樣地基板9位於第1位置，第3處理液流入至第1外側杯空間45a而排出至第3排液部96c。 As shown in FIG. 17, the top plate is in a state where the substrate 9 is at the first position. The lower end portion of the side wall portion 225 of the second plate portion 225 is located on the inner side in the radial direction of the second partition wall 47 of the cup portion 4b, and overlaps the second partition wall 47 in the radial direction. Therefore, the first processing liquid supplied onto the substrate 9 by the processing liquid supply unit 5 flows into the first outer cup space 45a. The first treatment liquid in the first outer cup space 45a is discharged to the first liquid discharge portion 96a via the inner cup drain 451 and the inner chamber drain 271. In the substrate processing apparatus 1a, when the substrate 9 is processed by the second processing liquid, the substrate 9 is placed at the first position, and the second processing liquid flows into the first outer cup space 45a and is discharged to the second liquid discharging portion 96b. . Similarly, when the substrate 9 is processed by the third processing liquid, the substrate 9 is placed at the first position, and the third processing liquid flows into the first outer cup space 45a and is discharged to the third liquid discharge portion 96c.

於基板處理裝置1a中，在由處理液供給部5對基板 9供給第4處理液時，如圖14所示，基板9位於第2位置。在基板9位於第2位置的狀態，頂板22之板側壁部225之下端部，係位於較杯部4b之第2間隔壁47之上端更上方。板側壁部225之下端部係位於較杯部4b之杯外側壁部41更靠徑方向內側，與杯外側壁部41之上端部於徑方向重疊。因此，由處理液供給部5供給至基板9上之第4處理液係流入至第2外側杯空間45b。 In the substrate processing apparatus 1a, the substrate is supplied from the processing liquid supply unit 5 When the fourth processing liquid is supplied, as shown in FIG. 14, the substrate 9 is located at the second position. In a state where the substrate 9 is at the second position, the lower end portion of the plate side wall portion 225 of the top plate 22 is located above the upper end of the second partition wall 47 of the cup portion 4b. The lower end portion of the plate side wall portion 225 is located on the inner side in the radial direction of the cup outer wall portion 41 of the cup portion 4b, and overlaps the upper end portion of the cup outer wall portion 41 in the radial direction. Therefore, the fourth processing liquid supplied to the substrate 9 by the processing liquid supply unit 5 flows into the second outer cup space 45b.

如上述，由於外杯排液埠457與外腔室排液埠277重 疊，故第2外側杯空間45b內之第4處理液係經由外杯排液埠457及外腔室排液埠277，排出至腔室21b外且殼體6外之第4排液部96d(參照圖16)。被排出至第4排液部96d的第4處理液係回收再利用。 As mentioned above, due to the outer cup drain 埠457 and the outer chamber drain 埠277 The fourth processing liquid in the second outer cup space 45b is discharged to the fourth liquid discharge portion 96d outside the chamber 21b and outside the casing 6 via the outer cup draining port 457 and the outer chamber draining port 277. (Refer to Figure 16). The fourth treatment liquid discharged to the fourth liquid discharge portion 96d is recovered and reused.

於基板處理裝置1a，杯部4b之處理液所流入的空 間，係分割為第1外側杯空間45a與第2外側杯空間45b，藉由使基板9升降，可選擇使用第1外側杯空間45a或第2外側杯空間 45b。藉此，可抑制杯部4b內之複數種類的處理液混合。其結果，可將利用與其他處理液相異之外側杯空間45b所排出之處理液(上述例子中為第4處理液)效率佳地回收再利用。又，可減低因處理液之混觸所造成的發熱等。又，第4處理液可為與第1~第3處理液相異之處理液，亦可為與任一者相同種類的處理液。 In the substrate processing apparatus 1a, the processing liquid of the cup portion 4b flows into the empty space. The first outer cup space 45a and the second outer cup space 45b are divided into one, and the first outer cup space 45a or the second outer cup space can be selected by moving the substrate 9 up and down. 45b. Thereby, it is possible to suppress mixing of a plurality of kinds of processing liquids in the cup portion 4b. As a result, the treatment liquid (the fourth treatment liquid in the above example) discharged from the outer side cup space 45b of the other treatment liquid phase can be efficiently recovered and reused. Further, it is possible to reduce heat generation due to the mixing of the treatment liquids. Further, the fourth treatment liquid may be a treatment liquid different from the first to third treatment liquid phases, or may be the same type of treatment liquid as either one.

圖18為表示腔室21b之其他較佳例子的腔室下面部 251的俯視圖。圖18所示例子中，第4排液部96d所連接之外腔室排液埠277，係位於與第2排液部96b所連接之1個內腔室排液埠271於周方向相同的位置。來自位於上述第2位置之基板9的第4處理液，係經由外杯排液埠457及外腔室排液埠277而排出至第4排液部96d。又，腔室21內之排氣係經由挾持著中心軸J1而位於外腔室排液埠277相反側的大腔室排氣埠281、藉由第2排氣機構95b所進行。圖18所示構成係適合於藉由第2排液部96b與第4排液部96d分別回收2種酸性處理液、但不需要對排氣加以分別的情況。藉由圖18之構成，可省略第4排氣機構而使排氣機構簡單化。 Figure 18 is a view showing the lower portion of the chamber of another preferred example of the chamber 21b. Top view of the 251. In the example shown in Fig. 18, the outer chamber discharge port 277 connected to the fourth liquid discharge portion 96d is located in the same direction as the inner discharge port 271 of the inner chamber connected to the second liquid discharge portion 96b. position. The fourth treatment liquid from the substrate 9 located at the second position is discharged to the fourth liquid discharge portion 96d via the outer cup drain 457 and the outer chamber drain 277. Further, the exhaust gas in the chamber 21 is carried out by the large exhaust gas exhaust port 281 located on the opposite side of the outer chamber discharge port 277 by the center axis J1, and by the second exhaust mechanism 95b. The configuration shown in Fig. 18 is suitable for the case where two kinds of acidic treatment liquids are separately collected by the second liquid discharge portion 96b and the fourth liquid discharge portion 96d, but it is not necessary to separate the exhaust gases. According to the configuration of Fig. 18, the fourth exhaust mechanism can be omitted and the exhaust mechanism can be simplified.

圖19為表示第3實施形態之基板處理裝置1b之杯部 4c的仰視圖。圖20為表示基板處理裝置1b之腔室21c之腔室下面部251的俯視圖。圖20中，以虛線一併表示杯部4c之杯外側壁部41、間隔壁44及杯內側壁部43。基板處理裝置1b係除了具備與圖1所示杯部4及腔室21形狀相異的杯部4c及腔室21c的點之外，具有與圖1所示之基板處理裝置1大致相同的構造。以下說明中，對基板處理裝置1之各構成相對應的基板處理裝置1b的構成加註相同符號。 Fig. 19 is a view showing a cup portion of a substrate processing apparatus 1b according to a third embodiment; Bottom view of 4c. FIG. 20 is a plan view showing the chamber lower surface portion 251 of the chamber 21c of the substrate processing apparatus 1b. In Fig. 20, the cup outer wall portion 41, the partition wall 44, and the cup inner side wall portion 43 of the cup portion 4c are collectively shown by broken lines. The substrate processing apparatus 1b has substantially the same structure as the substrate processing apparatus 1 shown in FIG. 1 except that it has a cup portion 4c and a chamber 21c which are different in shape from the cup portion 4 and the chamber 21 shown in FIG. . In the following description, the configuration of the substrate processing apparatus 1b corresponding to each configuration of the substrate processing apparatus 1 is denoted by the same reference numeral.

如圖19所示，於杯部4c，除了杯排液埠451及杯排 氣埠461之外，於杯底部42設有與杯排氣埠461一起排列於周方向的杯排氣埠464。杯排氣埠464係設於在杯底部42所設置之朝下方突出之複數的底部突出部465內。杯排氣埠464係與杯排氣埠461於周方向鄰接。以下說明中，為了容易區別杯排氣埠461、464，而將杯排氣埠461、464分別稱為「大杯排氣埠461」及「小杯排氣埠464」。又，大杯排氣埠461及小杯排氣埠464亦統稱為「杯排氣埠」。 As shown in Fig. 19, in the cup portion 4c, except for the cup draining liquid 451 and the cup row In addition to the gas cylinder 461, a cup exhaust port 464 which is arranged in the circumferential direction together with the cup exhaust port 461 is provided at the bottom portion 42 of the cup. The cup exhaust enthalation 464 is provided in a plurality of bottom projections 465 that are disposed downwardly of the cup bottom 42. The cup exhaust port 464 is adjacent to the cup exhaust port 461 in the circumferential direction. In the following description, in order to easily distinguish the cup exhaust ports 461 and 464, the cup exhaust ports 461 and 464 are referred to as "large cup exhaust port 461" and "small cup exhaust port 464", respectively. In addition, the large cup exhaust 埠461 and the small cup exhaust 埠464 are also collectively referred to as "cup exhaust 埠".

小杯排氣埠464之直徑，係小於大杯排氣埠461之直 徑。換言之，小杯排氣埠464之下端的面積係小於大杯排氣埠461之下端的面積。於內部設有小杯排氣埠464之底部突出部465的外徑，係小於在內部設有大杯排氣埠461之底部突出部462的外徑。 底部突出部465之下端面略垂直於上下方向。 The diameter of the small cup exhaust 埠 464 is less than the diameter of the large cup exhaust 埠 461 path. In other words, the area of the lower end of the small cup exhaust port 464 is smaller than the area of the lower end of the large cup exhaust port 461. The outer diameter of the bottom protrusion 465 having the small cup exhaust 464 inside is smaller than the outer diameter of the bottom protrusion 462 having the large cup exhaust 461 inside. The lower end surface of the bottom protrusion 465 is slightly perpendicular to the up and down direction.

如圖20所示，於腔室21c之腔室下面部251的腔室 底部256，省略了圖4所示之腔室21之腔室下面部251之腔室底部256所設置的小腔室排氣埠284，取代小腔室排氣埠284而設置內側凸部283。從而，第1排氣機構95a、第2排氣機構95b及第3排氣機構95c係分別連接於1個大腔室排氣埠281(以下有時簡稱為「腔室排氣埠281」)。 As shown in Fig. 20, the chamber of the lower portion 251 of the chamber of the chamber 21c The bottom portion 256 omits the small chamber exhaust port 284 provided in the chamber bottom portion 256 of the chamber lower portion 251 of the chamber 21 shown in Fig. 4, and the inner side convex portion 283 is provided instead of the small chamber exhaust port 284. Therefore, the first exhaust mechanism 95a, the second exhaust mechanism 95b, and the third exhaust mechanism 95c are respectively connected to one large chamber exhaust port 281 (hereinafter sometimes simply referred to as "chamber exhaust port 281"). .

於基板處理裝置1b，通常在以第1處理液進行基板9 處理時，係使杯部4c旋轉為圖1所示方向，流入至外側杯空間45之第1處理液，係經由圖19所示之杯排液埠451、及圖20所示之第1腔室排液埠群276a之中央的腔室排液埠271，被排出至腔室21c外且殼體6外之第1排液部96a。又，杯部4c內之氣體係經由大杯排氣埠461、及與第1腔室排液埠群276a挾持著中心軸J1而 位於相反側之腔室排氣埠281，藉由第1排氣機構95a排出至腔室21c外且殼體6外。 In the substrate processing apparatus 1b, the substrate 9 is usually carried out with the first processing liquid. At the time of the treatment, the cup portion 4c is rotated in the direction shown in Fig. 1, and the first treatment liquid that has flowed into the outer cup space 45 passes through the cup draining liquid 451 shown in Fig. 19 and the first chamber shown in Fig. 20. The chamber discharge port 271 in the center of the chamber drain group 276a is discharged to the first drain portion 96a outside the chamber 21c and outside the casing 6. Further, the gas system in the cup portion 4c is held by the large-cup exhaust port 461 and the center chamber J1 is held by the first chamber draining group 276a. The chamber exhaust port 281 located on the opposite side is discharged to the outside of the chamber 21c and outside the casing 6 by the first exhaust mechanism 95a.

另一方面，在要求減小由第1排氣機構95a所進行之 來自腔室21c的排氣流量的情況，杯旋轉機構7係由控制部10所控制，如圖21所示般，小杯排氣埠464係與第1腔室排氣埠群286a之腔室排氣埠281於上下方向重疊。小杯排氣埠464係接近腔室排氣埠281並於上下方向呈相對向。藉此，小杯排氣埠464實質上連接腔室排氣埠281。杯部4c內之氣體係經由小杯排氣埠464及腔室排氣埠281，藉由第1排氣機構95a排出至腔室21c外且殼體6外。 On the other hand, it is required to reduce the number of the first exhaust mechanism 95a. In the case of the flow rate of the exhaust gas from the chamber 21c, the cup rotating mechanism 7 is controlled by the control unit 10, as shown in Fig. 21, the chamber of the small cup exhaust port 464 and the chamber of the first chamber exhaust port group 286a. The exhaust port 281 is overlapped in the up and down direction. The small cup exhaust 埠 464 is close to the chamber exhaust 埠 281 and faces in the up and down direction. Thereby, the small cup exhaust port 464 is substantially connected to the chamber exhaust port 281. The gas system in the cup portion 4c passes through the small cup exhaust port 464 and the chamber exhaust port 281, and is discharged to the outside of the chamber 21c and outside the casing 6 by the first exhaust mechanism 95a.

如上述，小杯排氣埠464之下端面積係小於大杯排氣 埠461之下端面積。因此，杯部4c之方向可藉由由大杯排氣埠461與腔室排氣埠281重疊的狀態、利用杯旋轉機構7而變更為小杯排氣埠464與腔室排氣埠281重疊的狀態，而變更杯排氣埠與腔室排氣埠281的重複面積。如此，由第1排氣機構95a所進行之來自腔室21c的排氣流量變小。 As mentioned above, the lower end of the small cup exhaust 埠 464 is smaller than the large cup exhaust 之下461 lower end area. Therefore, the direction of the cup portion 4c can be changed to the small cup exhaust port 464 and the chamber exhaust port 281 by the cup rotating mechanism 7 in a state where the cup portion 埠 461 overlaps the chamber exhaust port 281. The state of the cup is changed by the overlap area of the chamber exhaust 埠 and the chamber exhaust 埠 281. As described above, the flow rate of the exhaust gas from the chamber 21c by the first exhaust mechanism 95a is reduced.

又，圖19所示之杯排液埠451係與圖20所示之第1 腔室排液埠群276a之3個腔室排液埠271中、圖20中之下側之腔室排液埠271重疊。流入至杯部4c之外側杯空間45的第1處理液，係經由杯排液埠451及該腔室排液埠271，而排出至腔室21c外且殼體6外的第1排液部96a。 Moreover, the cup draining liquid 451 shown in Fig. 19 and the first one shown in Fig. 20 The chamber discharge 埠271 of the three chamber discharge ports 271 of the chamber draining group 276a and the lower side of FIG. 20 overlap. The first treatment liquid that has flowed into the outer cup space 45 of the cup portion 4c is discharged to the first liquid discharge portion outside the chamber 21c via the cup drain port 451 and the chamber drain port 271. 96a.

如此，基板處理裝置1b中，與圖1所示之基板處理 裝置1同樣地，杯旋轉機構7由控制部10所控制，變更杯排氣埠與腔室排氣埠281的重複面積，藉此可配合對基板9之處理內容等而容易變更來自腔室21c的排氣流量。又，基板處理裝置1b中， 杯排氣埠與腔室排氣埠281之重複面積的變更，係將大杯排氣埠461或小杯排氣埠464選擇性地重疊於第1腔室排氣埠群286a之腔室排氣埠281。藉此，可於不變更第1排氣機構95a所造成之吸引力，而是依簡單構造變更來自腔室21c的排氣流量。 Thus, in the substrate processing apparatus 1b, the substrate processing shown in FIG. In the same manner, the cup rotating mechanism 7 is controlled by the control unit 10, and the overlapping area of the cup exhaust port and the chamber exhaust port 281 is changed, whereby the chamber 21c can be easily changed in accordance with the processing contents of the substrate 9 and the like. Exhaust flow. Further, in the substrate processing apparatus 1b, The change in the overlap area between the cup exhaust port and the chamber exhaust port 281 selectively overlaps the large cup exhaust port 461 or the cuvette exhaust port 464 with the chamber row of the first chamber exhaust port group 286a. Discouraged 281. Thereby, the flow rate of the exhaust gas from the chamber 21c can be changed in a simple configuration without changing the suction force caused by the first exhaust mechanism 95a.

圖22為將小杯排氣埠464、及與小杯排氣埠464於 上下方向重疊之第1腔室排氣埠群286a之腔室排氣埠281放大表示的圖。如圖22所示，於內部設有小杯排氣埠464之底部突出部465的下端面465a，係如上述與上下方向呈略垂直。腔室排氣埠281之上端中之中央部的略圓形區域，係與小杯排氣埠464之下端重複的重複區域281a。腔室排氣埠281之上端中，重複區域281a之周圍的圓環狀區域(亦即，重複區域281a除外的區域)係與小杯排氣埠464下端不重複的非重複區域281b。 Figure 22 is a small cup exhaust 埠 464, and a small cup exhaust 埠 464 The chamber exhaust port 281 of the first chamber exhaust manifold group 286a that overlaps in the vertical direction is enlarged. As shown in Fig. 22, the lower end surface 465a of the bottom protruding portion 465 of the small cup exhaust port 464 is provided inside, which is slightly perpendicular to the vertical direction as described above. A slightly circular region in the central portion of the upper end of the chamber exhaust port 281 is a repeating region 281a which is repeated with the lower end of the small cup exhaust port 464. In the upper end of the chamber exhaust port 281, the annular region around the repeating region 281a (i.e., the region excluding the repeating region 281a) is a non-repetitive region 281b that does not overlap the lower end of the small cup exhaust port 464.

腔室排氣埠281之非重複區域281b，係與杯底部42 之底部突出部465之下端面465a接近而上下方向呈相對向。藉此，腔室排氣埠281之非重複區域281b實質上被閉塞。因此，在藉由第1排氣機構95a經由小杯排氣埠464及腔室排氣埠281進行排氣時，可防止或抑制杯部4c下方之氣體經由腔室排氣埠281之非重複區域281b而被吸引至腔室排氣埠281內的情形。其結果，可使杯部4c內之氣體效率佳地排出。於基板處理裝置1b中，可利用底部突出部465之下端面465a的簡單構造，容易閉塞腔室排氣埠281之非重複區域281b。 The non-repetitive region 281b of the chamber exhaust port 281 is attached to the cup bottom 42 The lower end surface 465a of the bottom protrusion 465 is close to the up-and-down direction. Thereby, the non-repetitive region 281b of the chamber exhaust port 281 is substantially occluded. Therefore, when the first exhaust mechanism 95a is exhausted via the small-cup exhaust port 464 and the chamber exhaust port 281, it is possible to prevent or suppress the non-repetition of the gas below the cup portion 4c via the chamber exhaust port 281. The region 281b is attracted to the chamber exhaust port 281. As a result, the gas in the cup portion 4c can be efficiently discharged. In the substrate processing apparatus 1b, the non-repetitive area 281b of the chamber exhaust port 281 can be easily closed by the simple configuration of the lower end surface 465a of the bottom protrusion 465.

尚且，小杯排氣埠464若設於杯底部42，則並不一 定需要設於底部突出部465內。即使在省略底部突出部465的情況，腔室排氣埠281之非重複區域281b係於小杯排氣埠464之周 圍接近杯底部42而實質上被閉塞。即使為此情況，亦可如同上述般，將杯部4c內之氣體效率佳地排出。 Moreover, if the small cup exhaust 埠 464 is provided at the bottom 42 of the cup, it is not one. It is necessary to be disposed in the bottom protrusion 465. Even in the case where the bottom projection 465 is omitted, the non-repetitive region 281b of the chamber exhaust port 281 is attached to the circumference of the small cup exhaust port 464. Close to the cup bottom 42 and substantially occluded. Even in this case, the gas in the cup portion 4c can be efficiently discharged as described above.

於基板處理裝置1b，與上述基板處理裝置1同樣地， 有時要求由第1排氣機構95a所進行之來自腔室21c之排氣流量的微調整。此時，圖19所示之大杯排氣埠461及小杯排氣埠464其中一者之杯排氣埠，係由重疊於圖20所示之連接於第1排氣機構95a之腔室排氣埠281的狀態，於維持該杯排氣埠之一與腔室排氣埠281之重複，並藉由杯旋轉機構7使杯部4c僅旋轉微小角度(例如5度)。 In the substrate processing apparatus 1b, similarly to the substrate processing apparatus 1 described above, The fine adjustment of the flow rate of the exhaust gas from the chamber 21c by the first exhaust mechanism 95a is sometimes required. At this time, the cup exhaust enthalpy of one of the large-cup exhaust enthalpy 461 and the small-cup exhaust enthalpy 464 shown in FIG. 19 is overlapped with the chamber connected to the first exhausting mechanism 95a as shown in FIG. The state of the exhaust port 281 is such that one of the cup exhaust ports is kept overlapping with the chamber exhaust port 281, and the cup portion 4c is rotated by only a small angle (for example, 5 degrees) by the cup rotating mechanism 7.

藉由杯部4c之微小角度的旋轉，上述杯排氣埠之一 與腔室排氣埠281的重複面積被變更。其結果，可藉由簡單構造對由第1排氣機構95a所進行之來自腔室21c的排氣流量進行微調整。 One of the above-mentioned cup exhausts by the rotation of the small angle of the cup portion 4c The area of overlap with the chamber exhaust port 281 is changed. As a result, the flow rate of the exhaust gas from the chamber 21c by the first exhaust mechanism 95a can be finely adjusted by a simple configuration.

此時，與圖10同樣地，腔室排氣埠281之上端中與 該杯排氣埠之一之重複區域除外的非重複區域，係與於內部設有該杯排氣埠之一的底部突出部的下端面(亦即，杯底部42之一部分的略垂直於上下方向的面)接近並於上下方向相對向，而實質上被閉塞。又，該杯排氣埠之一之下端中與腔室排氣埠281之重複區域除外的非重複區域，係與於內部設有腔室排氣埠281之底部突出部282的上端面(亦即，腔室底部256之一部分的略垂直於上下方向的面)接近並於上下方向相對向，而實質上被閉塞。 At this time, as in Fig. 10, the upper end of the chamber exhaust port 281 is The non-repetitive region except the repeating region of one of the cup exhaust vents is a lower end surface of the bottom projection portion having one of the cup venting rims disposed therein (ie, a portion of the cup bottom portion 42 is slightly perpendicular to the upper and lower portions The faces of the directions are close to each other and are opposed to each other in the up and down direction, and are substantially blocked. Further, the non-repetitive region except the overlapping region of the chamber exhaust port 281 in one of the lower ends of the cup exhaust port is connected to the upper end surface of the bottom protrusion portion 282 of the chamber exhaust port 281 (also That is, a portion of the chamber bottom portion 256 that is slightly perpendicular to the vertical direction is close to and opposed in the up and down direction, and is substantially blocked.

如上述，說明了在設置杯部4c及腔室21c的情況， 由第1處理液進行處理時之第1排氣機構95a的流量變更，而關於在由第2處理液進行處理時之第2排氣機構95b的流量變更亦相同。又，關於在由第3處理液進行處理時之第3排氣機構95c的流 量變更亦相同。 As described above, the case where the cup portion 4c and the chamber 21c are provided is explained. The flow rate of the first exhaust mechanism 95a when the first treatment liquid is processed is changed, and the flow rate of the second exhaust mechanism 95b when the second treatment liquid is processed is also changed. Further, the flow of the third exhaust mechanism 95c when the third processing liquid is processed The amount change is also the same.

圖23為表示第4實施形態之基板處理裝置1c的剖面 圖。基板處理裝置1c係除了具備突出部34的點之外，具有與圖1所示之基板處理裝置1大致相同的構造。以下說明中，對基板處理裝置1之各構成相對應的基板處理裝置1c的構成加註相同符號。 Figure 23 is a cross section showing the substrate processing apparatus 1c of the fourth embodiment. Figure. The substrate processing apparatus 1c has substantially the same structure as the substrate processing apparatus 1 shown in FIG. 1 except for the point where the protruding portion 34 is provided. In the following description, the configuration of the substrate processing apparatus 1c corresponding to each configuration of the substrate processing apparatus 1 is denoted by the same reference numeral.

突出部34係由基板保持部31之基底部311之下面朝下方(亦即朝杯部4)突出。突出部34為包圍中心軸J1周圍之環狀。詳言之，突出部34係以中心軸J1為中心之略圓筒狀的部位。突出部34係例如與基底部311一體形成。圖23所示例子中，突出部34係設於較杯部4之間隔壁44更靠徑方向外側、且較杯外側壁部41更靠徑方向內側。突出部34亦可設置於在與杯部4之間隔壁44於徑方向相同的位置、由間隔壁44朝上方離間。 The protruding portion 34 protrudes downward from the lower surface of the base portion 311 of the substrate holding portion 31 (that is, toward the cup portion 4). The protruding portion 34 is an annular shape surrounding the central axis J1. In detail, the protruding portion 34 is a substantially cylindrical portion centered on the central axis J1. The protruding portion 34 is formed integrally with the base portion 311, for example. In the example shown in FIG. 23, the protruding portion 34 is provided on the outer side in the radial direction of the partition wall 44 of the cup portion 4 and on the inner side in the radial direction from the outer wall portion 41 of the cup. The protruding portion 34 may be provided at a position that is the same as the radial direction of the partition wall 44 of the cup portion 4, and is separated upward by the partition wall 44.

基板處理裝置1c中，與上述基板處理裝置1同樣地，在基板9之處理時，有使基板9之旋轉速度降低(或停止基板9之旋轉)而使處理液積液於基板9之上面91的情形。此時，有由基板9上流至基底部311上面上之處理液回流至基底部311下面(亦即，通過基底部311表面而朝下面移動)的可能性。 In the substrate processing apparatus 1c, similarly to the substrate processing apparatus 1, during the processing of the substrate 9, the rotation speed of the substrate 9 is lowered (or the rotation of the substrate 9 is stopped), and the processing liquid is accumulated on the upper surface of the substrate 91. The situation. At this time, there is a possibility that the processing liquid flowing on the upper surface of the base portion 311 from the substrate 9 flows back below the base portion 311 (that is, moving downward through the surface of the base portion 311).

於基板處理裝置1c，如上述般，由於設置由基底部311下面朝下方突出的環狀的突出部34，故回流至基底部311下面的處理液，係經過突出部34之外周面而落下至杯部4之外側杯空間45。如此，於基板處理裝置1c，可防止回流至基底部311下面之處理液移動至較突出部34更靠徑方向內側。又，突出部34由於設置於較杯部4之間隔部44更靠徑方向外側、或與間隔壁44於徑方向之相同位置，故可防止處理液落下至內側杯空間46而由杯排 氣埠461流入至排氣機構的情形。突出部34亦可設於上述之基板處理裝置1、1a、1b。 In the substrate processing apparatus 1c, as described above, since the annular protruding portion 34 that protrudes downward from the lower surface of the base portion 311 is provided, the processing liquid that has flowed back to the lower surface of the base portion 311 passes through the outer peripheral surface of the protruding portion 34 and falls to The cup portion 4 has an outer cup space 45. As described above, in the substrate processing apparatus 1c, it is possible to prevent the processing liquid flowing back to the lower surface of the base portion 311 from moving to the inner side in the radial direction of the protruding portion 34. Further, since the protruding portion 34 is disposed on the outer side in the radial direction of the partition portion 44 of the cup portion 4 or at the same position as the partition wall 44 in the radial direction, it is possible to prevent the treatment liquid from falling to the inner cup space 46 and being served by the cup row. The situation in which the gas 埠 461 flows into the exhaust mechanism. The protruding portion 34 may be provided in the substrate processing apparatuses 1, 1a, 1b described above.

圖24為表示第5實施形態之基板處理裝置1d的剖面 圖。基板處理裝置1d中，設置與圖1所示之杯部4及腔室21形狀相異的杯部4d及腔室21d。又，於基板處理裝置1d，將杯排氣埠461設於杯內側壁部43，將腔室排氣埠281、284設於在杯內側壁部43之徑方向內側與杯內側壁部43於徑方向呈相對向的腔室內側壁部255(腔室排氣埠284係圖示於圖25)。基板處理裝置1d係與圖23所示之基板處理裝置1c同樣地，具備突出部34。基板處理裝置1d之其他構造係與圖1所示之基板處理裝置1略相同。以下說明中，對與基板處理裝置1之各構成對應之基板處理裝置1d之構成加註相同符號。 Figure 24 is a cross section showing the substrate processing apparatus 1d of the fifth embodiment. Figure. In the substrate processing apparatus 1d, a cup portion 4d and a chamber 21d which are different in shape from the cup portion 4 and the chamber 21 shown in Fig. 1 are provided. Further, in the substrate processing apparatus 1d, the cup exhaust port 461 is provided in the cup inner side wall portion 43, and the chamber exhaust ports 281 and 284 are provided on the inner side in the radial direction of the cup inner side wall portion 43 and the cup inner side wall portion 43. The radial direction is the opposing inner wall side wall portion 255 (the chamber exhaust port 284 is shown in Fig. 25). The substrate processing apparatus 1d includes a protruding portion 34 similarly to the substrate processing apparatus 1c shown in FIG. The other structure of the substrate processing apparatus 1d is slightly the same as that of the substrate processing apparatus 1 shown in FIG. In the following description, the configuration of the substrate processing apparatus 1d corresponding to each configuration of the substrate processing apparatus 1 is denoted by the same reference numeral.

圖25係表示將腔室21d及杯部4d於杯排氣埠461及 腔室排氣埠281、284之位置予以切剖之剖面的橫剖面圖。圖26為腔室下面部251之俯視圖。圖26中，以虛線一併表示杯外側壁部41、杯內側壁部43、腔室內側壁部255及導管內壁部257。 Figure 25 shows the chamber 21d and the cup portion 4d in the cup exhaust port 461 and A cross-sectional view of the cross section of the chamber exhaust ports 281, 284 is cut away. Figure 26 is a plan view of the lower portion 251 of the chamber. In Fig. 26, the cup outer wall portion 41, the cup inner side wall portion 43, the chamber inner wall portion 255, and the duct inner wall portion 257 are collectively shown by broken lines.

如圖24至圖26所示，於杯部4d，省略了圖1所示 之間隔壁44，杯部4d之內側之空間僅成為杯空間45。又，略圓筒狀之杯內側壁部43，係位於較圖1所示之位置更靠徑方向外側。於腔室下面部251，略圓筒狀之腔室內側壁部255係位於較圖1所示位置更靠徑方向外側。又，在腔室內側壁部255與基板旋轉機構32之間，設置略圓筒狀之導管內壁部257。導管內壁部257係由下面中央部254之下面朝下方擴展。腔室底部256亦由腔室內側壁部255朝徑方向內側擴展，導管內壁部257之下端部係連接於腔室底部 256。 As shown in FIG. 24 to FIG. 26, in the cup portion 4d, the illustration shown in FIG. 1 is omitted. The partition wall 44 and the space inside the cup portion 4d become only the cup space 45. Further, the slightly cylindrical cup inner side wall portion 43 is located on the outer side in the radial direction from the position shown in Fig. 1 . In the chamber lower portion 251, the slightly cylindrical inner wall portion 255 is located radially outward of the position shown in Fig. 1. Further, a substantially cylindrical duct inner wall portion 257 is provided between the chamber side wall portion 255 and the substrate rotating mechanism 32. The duct inner wall portion 257 is extended downward from the lower surface of the lower central portion 254. The bottom portion 256 of the chamber also extends from the inner side wall portion 255 toward the inner side in the radial direction, and the lower end portion of the inner wall portion 257 of the duct is connected to the bottom portion of the chamber. 256.

於腔室內側壁部255與導管內壁部257之間的空間 (亦即，由腔室內側壁部255、下面中央部254、導管內壁部257及腔室底部256所包圍的空間)，係分割為彼此獨立之複數空間。於圖25所示例子中，在腔室內側壁部255與導管內壁部257之間的空間，包含第1導管287a、第2導管287b、第3導管287c。如圖24所示，於第1導管287a，係設有貫通腔室底部256及殼體底部61的貫通孔，經由該貫通孔，第1導管287a係連接於圖25所示之第1排氣機構95a。第2導管287b係經由設於底部之同樣之其他貫通孔而連接於第2排氣機構95b，第3導管287c亦經由設於底部之同樣之其他貫通孔而連接於第3排氣機構95c。 a space between the inner wall portion 255 of the chamber and the inner wall portion 257 of the duct (That is, the space surrounded by the inner wall portion 255, the lower central portion 254, the inner wall portion 257, and the bottom portion 256 of the chamber) is divided into a plurality of spaces independent of each other. In the example shown in Fig. 25, the space between the chamber inner wall portion 255 and the duct inner wall portion 257 includes the first duct 287a, the second duct 287b, and the third duct 287c. As shown in FIG. 24, the first duct 287a is provided with a through hole penetrating the bottom portion 256 of the chamber and the bottom portion 61 of the casing, and the first duct 287a is connected to the first exhaust pipe shown in FIG. 25 through the through hole. Agency 95a. The second duct 287b is connected to the second exhaust mechanism 95b via the same other through hole provided in the bottom portion, and the third duct 287c is also connected to the third exhaust mechanism 95c via the other through hole provided in the bottom portion.

杯排氣埠461為例如貫通杯內側壁部43之貫通孔。 該貫通孔的剖面為例如圓形。該貫通孔之剖面形狀可適當變更。杯排氣埠461係例如在杯內側壁部43之上端附近僅設置1個。杯排氣埠461係與較位於杯內側壁部43更靠徑方向外側之突出部34之內周面於徑方向呈相對向。換言之，突出部34之下端係較杯排氣埠461之下端更靠下方、或位於與杯排氣埠461之下端於上下方向相同的位置。 The cup exhaust port 461 is, for example, a through hole penetrating through the inner wall portion 43 of the cup. The cross section of the through hole is, for example, a circular shape. The cross-sectional shape of the through hole can be changed as appropriate. The cup exhaust 埠 461 is provided, for example, only one near the upper end of the inner wall portion 43 of the cup. The cup exhaust 埠 461 is opposed to the inner circumferential surface of the protruding portion 34 located radially outward of the cup inner side wall portion 43 in the radial direction. In other words, the lower end of the protruding portion 34 is located lower than the lower end of the cup exhaust port 461 or at the same position as the lower end of the cup exhaust port 461 in the up and down direction.

腔室排氣埠281、284為例如貫通腔室內側壁部255 之貫通孔。該貫通孔的剖面為例如圓形。該貫通孔之剖面形狀可適當變更。腔室排氣埠281、284係例如在腔室內側壁部255之上端附近配列於周方向。腔室排氣埠281、284係配置於與杯排氣埠461在上下方向之略相同位置。於圖25所示例子中，3個大腔室排氣埠281及3個小腔室排氣埠284係於周方向交替配置。大腔室排氣埠 281之剖面形狀及剖面積係與杯排氣埠461之剖面形狀及剖面積略相同。小腔室排氣埠284之剖面積係小於杯排氣埠461及大腔室排氣埠281的剖面積。 The chamber exhaust ports 281 and 284 are, for example, penetrating the inner wall portion 255 of the chamber. Through hole. The cross section of the through hole is, for example, a circular shape. The cross-sectional shape of the through hole can be changed as appropriate. The chamber exhaust ports 281 and 284 are arranged, for example, in the circumferential direction near the upper end of the chamber side wall portion 255. The chamber exhaust ports 281 and 284 are disposed at substantially the same position as the cup exhaust port 461 in the vertical direction. In the example shown in Fig. 25, three large chamber exhaust ports 281 and three small chamber exhaust ports 284 are alternately arranged in the circumferential direction. Large chamber exhaust The cross-sectional shape and sectional area of the 281 are slightly the same as the cross-sectional shape and sectional area of the cup exhaust 埠461. The cross-sectional area of the small chamber exhaust port 284 is smaller than the cross-sectional area of the cup exhaust port 461 and the large chamber exhaust port 281.

以下說明中，將連接於第1導管287a之1個大腔室 排氣埠281及1個小腔室排氣埠284統稱為「第1腔室排氣埠群286a」。又，將連接於第2導管287b之1個大腔室排氣埠281及1個小腔室排氣埠284統稱為「第2腔室排氣埠群286b」。又，將連接於第3導管287c之1個大腔室排氣埠281及1個小腔室排氣埠284統稱為「第3腔室排氣埠群286c」。第1腔室排氣埠群286a、第2腔室排氣埠群286b及第3腔室排氣埠群286c亦統稱為「腔室排氣埠群286a~286c」。圖25及圖26中，係分別由二點虛線圈圍各腔室排氣埠群286a~286c。 In the following description, a large chamber to be connected to the first duct 287a will be connected. The exhaust port 281 and one small chamber exhaust port 284 are collectively referred to as "first chamber exhaust port group 286a". Further, one large chamber exhaust port 281 and one small chamber exhaust port 284 connected to the second duct 287b are collectively referred to as "second chamber exhaust port group 286b". Further, one large chamber exhaust port 281 and one small chamber exhaust port 284 connected to the third duct 287c are collectively referred to as "third chamber exhaust port group 286c". The first chamber exhaust manifold group 286a, the second chamber exhaust manifold group 286b, and the third chamber exhaust manifold group 286c are also collectively referred to as "chamber exhaust manifold groups 286a to 286c." In Figs. 25 and 26, each of the chamber exhaust manifolds 286a to 286c is surrounded by two dotted circles.

第1腔室排氣埠群286a之大腔室排氣埠281及小腔 室排氣埠284，係經由第1導管287a連接於第1排氣機構95a。第2腔室排氣埠群286b之大腔室排氣埠281及小腔室排氣埠284，係經由第2導管287b連接於第2排氣機構95b。第3腔室排氣埠群286c之大腔室排氣埠281及小腔室排氣埠284，係經由第3導管287c連接於第3排氣機構95c。排氣機構95a~95c係配置於基板處理裝置1d外部。在使用基板處理裝置1d的期間，由排氣機構95a~95c所進行之吸引係持續進行。 Large chamber exhaust 埠 281 and small cavity of the first chamber exhaust manifold 286a The chamber exhaust port 284 is connected to the first exhaust mechanism 95a via the first duct 287a. The large chamber exhaust port 281 and the small chamber exhaust port 284 of the second chamber exhaust port group 286b are connected to the second exhaust mechanism 95b via the second duct 287b. The large chamber exhaust port 281 and the small chamber exhaust port 284 of the third chamber exhaust port group 286c are connected to the third exhaust mechanism 95c via the third duct 287c. The exhaust mechanisms 95a to 95c are disposed outside the substrate processing apparatus 1d. While the substrate processing apparatus 1d is being used, the suction by the exhaust mechanisms 95a to 95c continues.

如圖26所示，於腔室底部256係與圖4同樣地，設 置複數(例如9個)之腔室排液埠271，複數之腔室排液埠271係具有第1腔室排液埠群276a、第2腔室排液埠群276b及第3腔室排液埠群276c。第1腔室排液埠群276a、第2腔室排液埠群276b及 第3腔室排液埠群276c係分別挾持著中心軸J1，而位於第1腔室排氣埠群286a、第2腔室排氣埠群286b及第3腔室排氣埠群286c的相反側。 As shown in Fig. 26, the bottom portion 256 of the chamber is the same as that of Fig. 4 A plurality of (for example, nine) chamber drains 271, and a plurality of chamber drains 271 have a first chamber drain group 276a, a second chamber drain group 276b, and a third chamber row Liquid helium group 276c. The first chamber draining group 276a, the second chamber draining group 276b and The third chamber draining group 276c is respectively held by the central axis J1, and is located opposite to the first chamber exhaust manifold group 286a, the second chamber exhaust manifold group 286b, and the third chamber exhaust manifold group 286c. side.

各腔室排液埠群276a~276c中，3個腔室排液埠271 係於周方向依等角度間隔排列。第1腔室排液埠群276a之3個腔室排液埠271係連接於第1排液部96a。第2腔室排液埠群276b之3個腔室排液埠271係連接於第2排液部96b。第3腔室排液埠群276c之3個腔室排液埠271係連接於第3排液部96c。第1排液部96a、第2排液部96b及第3排液部96c係彼此獨立設置。 In each of the chamber draining groups 276a to 276c, three chambers are drained 埠271 They are arranged at equal angular intervals in the circumferential direction. The three chamber drain ports 271 of the first chamber draining group 276a are connected to the first drain portion 96a. The three chamber drain ports 271 of the second chamber draining group 276b are connected to the second drain portion 96b. The three chamber drain ports 271 of the third chamber draining group 276c are connected to the third drain portion 96c. The first liquid discharge portion 96a, the second liquid discharge portion 96b, and the third liquid discharge portion 96c are provided independently of each other.

基板處理裝置1d中，藉由控制部10(參照圖1)控制 杯旋轉機構7，而使杯排氣埠461選擇性地重疊於複數之大腔室排氣埠281及複數之小腔室排氣埠284中的任一個。又，杯排液埠451係選擇性地重疊於複數之腔室排液埠271中的任一個。 The substrate processing apparatus 1d is controlled by the control unit 10 (see FIG. 1). The cup rotating mechanism 7 selectively overlaps the cup exhaust port 461 with any of a plurality of large chamber exhaust ports 281 and a plurality of small chamber exhaust ports 284. Further, the cup draining liquid 451 is selectively overlapped with any one of the plurality of chamber liquid discharge ports 271.

杯排氣埠461係於與第1腔室排氣埠群286a之大腔 室排氣埠281於徑方向重疊的狀態，杯排液埠451與第1腔室排液埠群276a之中央之腔室排液埠271於上下方向重疊。杯部4d內之氣體，係經由杯排氣埠461、上述大腔室排氣埠281及第1導管287a，藉第1排氣機構95a所排出。又，杯部4d內之液體係經由杯排液埠451及上述腔室排液埠271，藉第1排液部96a所排出。 The cup exhaust 埠 461 is attached to the large cavity of the first chamber exhaust manifold 286a When the chamber exhaust port 281 is overlapped in the radial direction, the cup drain port 451 and the chamber drain port 271 at the center of the first chamber drain port group 276a overlap in the vertical direction. The gas in the cup portion 4d is discharged through the first exhaust mechanism 95a via the cup exhaust port 461, the large chamber exhaust port 281, and the first duct 287a. Further, the liquid system in the cup portion 4d is discharged through the first liquid discharge portion 96a via the cup draining port 451 and the chamber draining port 271.

杯排氣埠461係於與第1腔室排氣埠群286a之小腔 室排氣埠284於徑方向重疊的狀態，杯排液埠451與第1腔室排液埠群276a之圖26中之上側之腔室排液埠271於上下方向重疊。杯部4d內之氣體係經由杯排氣埠461、上述小腔室排氣埠284及第1導管287a，藉第1排氣機構95a被排出。如上述，小腔室排氣埠 284之剖面積由於小於大腔室排氣埠281之剖面積，故藉由利用小腔室排氣埠284而排氣流量變小。杯部4d內之液體係藉由第1排液部96a所排出。換言之，藉由旋轉杯部4d，可於不變更排氣目的而是僅變更排氣流量。 The cup exhaust 埠 461 is attached to the small cavity of the first chamber exhaust manifold 286a In a state in which the chamber exhaust port 284 is overlapped in the radial direction, the cup drain port 451 and the chamber drain port 271 on the upper side in Fig. 26 of the first chamber drain port group 276a overlap in the vertical direction. The gas system in the cup portion 4d is discharged by the first exhaust mechanism 95a via the cup exhaust port 461, the small chamber exhaust port 284, and the first duct 287a. As mentioned above, small chamber exhaust 埠 Since the sectional area of 284 is smaller than the sectional area of the large chamber exhaust port 281, the exhaust flow rate is reduced by using the small chamber exhaust port 284. The liquid system in the cup portion 4d is discharged by the first liquid discharge portion 96a. In other words, by rotating the cup portion 4d, it is possible to change only the exhaust gas flow rate without changing the purpose of the exhaust gas.

杯排液埠451係於與第1腔室排液埠群276a之圖26 中之下側之腔室排液埠271於上下方向重疊的狀態，杯排氣埠461位於由第1腔室排氣埠群286a之大腔室排氣埠281及小腔室排氣埠284朝周方向離間的位置。於此狀態下，杯排氣埠461係未重疊於任一之腔室排氣埠281、284，接近腔室內側壁部255之外周面並於徑方向呈相對向，藉由腔室內側壁部255而實質上被閉塞。藉此，使經由杯排氣埠461之杯部4d內之氣體吸引實質上停止。其結果，於杯部4d內之氣體排出實質上停止的狀態，使杯部4d內之液體藉第1排液部96a被排出。 The cup draining liquid 451 is attached to the first chamber discharge liquid group 276a. The chamber discharge port 271 in the lower middle side overlaps in the up and down direction, and the cup exhaust port 461 is located in the large chamber exhaust port 281 and the small chamber exhaust port 284 of the first chamber exhaust port group 286a. The position away from the circumference. In this state, the cup exhaust port 461 is not overlapped with any of the chamber exhaust ports 281 and 284, and is close to the outer peripheral surface of the chamber side wall portion 255 and faces in the radial direction by the inner wall portion 255. It was essentially occluded. Thereby, the gas suction in the cup portion 4d via the cup exhaust port 461 is substantially stopped. As a result, the liquid in the cup portion 4d is substantially stopped, and the liquid in the cup portion 4d is discharged through the first liquid discharge portion 96a.

杯排氣埠461係於與第2腔室排氣埠群286b之大腔 室排氣埠281於徑方向重疊的狀態，杯排液埠451與第2腔室排液埠群276b之中央之腔室排液埠271於上下方向重疊。杯部4d內之氣體係依較大流量藉第2排氣機構95b被排出，杯部4d內之液體係藉由第2排液部96b被排出。 The cup exhaust 埠 461 is attached to the large cavity of the second chamber exhaust manifold 286b When the chamber exhaust port 281 is overlapped in the radial direction, the cup drain port 451 and the chamber drain port 271 at the center of the second chamber drain port group 276b overlap in the vertical direction. The gas system in the cup portion 4d is discharged by the second exhaust mechanism 95b at a large flow rate, and the liquid system in the cup portion 4d is discharged by the second liquid discharge portion 96b.

杯排氣埠461係於與第2腔室排氣埠群286b之小腔 室排氣埠284於徑方向重疊的狀態，杯排液埠451與第2腔室排液埠群276b之圖26中之右側之腔室排液埠271於上下方向重疊。杯部4d內之氣體係依較小流量藉第2排氣機構95b被排出，杯部4d內之液體係藉由第2排液部96b被排出。亦即，藉由使杯部4d旋轉，可於不變更排氣目的地而是僅變更排氣流量。 The cup exhaust 埠 461 is attached to the small cavity of the second chamber exhaust manifold 286b When the chamber exhaust port 284 is overlapped in the radial direction, the cup drain port 451 and the chamber drain port 271 on the right side in Fig. 26 of the second chamber drain port group 276b overlap in the vertical direction. The gas system in the cup portion 4d is discharged by the second exhaust mechanism 95b at a small flow rate, and the liquid system in the cup portion 4d is discharged by the second liquid discharge portion 96b. That is, by rotating the cup portion 4d, it is possible to change only the exhaust gas flow rate without changing the exhaust destination.

杯排液埠451係於與第2腔室排液埠群276b之圖26 中之左側之腔室排液埠271於上下方向重疊的狀態，杯排氣埠461未重疊於腔室排氣埠281、284之任一者，接近腔室內側壁部255之外周圍而實質上被閉塞。藉此，使經由杯排氣埠461之杯部4d內的氣體吸引實質上停止。其結果，依杯部4d內之氣體排出實質上停止的狀態，使杯部4d內之液體藉由第2排液部96b被排出。 The cup draining liquid 451 is attached to the second chamber discharge liquid group 276b. In the state in which the chamber discharge port 271 on the left side is overlapped in the up-and-down direction, the cup exhaust port 461 is not overlapped with any of the chamber exhaust ports 281 and 284, and is close to the periphery of the side wall portion 255 of the chamber. Being occluded. Thereby, the gas suction in the cup portion 4d via the cup exhaust port 461 is substantially stopped. As a result, the liquid in the cup portion 4d is discharged by the second liquid discharge portion 96b in a state where the gas discharge in the cup portion 4d is substantially stopped.

杯排氣埠461係於與第3腔室排氣埠群286c之大腔 室排氣埠281於徑方向重疊之狀態，杯排液埠451與第3腔室排液埠群276c之中央之腔室排液埠271於上下方向重疊。杯部4d內之氣體係依較大流量藉由第3排氣機構95c被排出，杯部4d入之液體係藉由第3排液部96c被排出。 The cup exhaust 埠 461 is attached to the large cavity of the third chamber exhaust manifold 286c The chamber exhaust port 281 is overlapped in the radial direction, and the cup drain port 451 and the chamber drain port 271 in the center of the third chamber drain port group 276c overlap in the vertical direction. The gas system in the cup portion 4d is discharged by the third exhaust mechanism 95c at a large flow rate, and the liquid system into which the cup portion 4d enters is discharged by the third liquid discharge portion 96c.

杯排氣埠461係於與第3腔室排氣埠群286c之小腔 室排氣埠284於徑方向重疊的狀態，杯排液埠451與第3腔室排液埠群276c之圖26中之右側之腔室排液埠271於上下方向重疊。杯部4d內之氣體係依較小流量藉第3排氣機構95c被排出，杯部4d內之液體係藉由第3排液部96c被排出。亦即，藉由使杯部4d旋轉，可於不變更排氣目的而是僅變更排氣流量。 The cup exhaust 埠 461 is attached to the small cavity of the third chamber exhaust manifold 286c When the chamber exhaust port 284 is overlapped in the radial direction, the cup drain port 451 and the chamber drain port 271 on the right side in Fig. 26 of the third chamber drain port group 276c overlap in the vertical direction. The gas system in the cup portion 4d is discharged by the third exhaust mechanism 95c at a small flow rate, and the liquid system in the cup portion 4d is discharged by the third liquid discharge portion 96c. That is, by rotating the cup portion 4d, it is possible to change only the exhaust gas flow rate without changing the purpose of the exhaust gas.

杯排液埠451係於與第3腔室排液埠群276c之圖26 中之左側之腔室排液埠271於上下方向重疊的狀態，杯排氣埠461未重疊於腔室排氣埠281、284之任一者，接近腔室內側壁部255之外周圍而實質上被閉塞。藉此，使經由杯排氣埠461之杯部4d內的氣體吸引實質上停止。其結果，依杯部4d內之氣體排出實質上停止的狀態，使杯部4d內之液體藉由第3排液部96c被排出。 The cup draining liquid 451 is attached to the third chamber discharge liquid group 276c. In the state in which the chamber discharge port 271 on the left side is overlapped in the up-and-down direction, the cup exhaust port 461 is not overlapped with any of the chamber exhaust ports 281 and 284, and is close to the periphery of the side wall portion 255 of the chamber. Being occluded. Thereby, the gas suction in the cup portion 4d via the cup exhaust port 461 is substantially stopped. As a result, the liquid in the cup portion 4d is discharged by the third liquid discharge portion 96c in a state where the gas discharge in the cup portion 4d is substantially stopped.

基板處理裝置1d中，係與圖1所示之基板處理裝置 1同樣地，藉由杯旋轉機構7，於不開放腔室21d及殼體6而是使腔室21d內且殼體6內之杯部4d旋轉，藉此可於第1排氣機構95a、第2排氣機構95b及第3排氣機構95c之間容易切換進行來自杯部4d之排氣的排氣機構。又，由於可依簡單構造之機構切換來自杯部4d之排氣目的地，故可使基板處理裝置1d之構造簡單化、小型化。 進而，藉由於腔室21d內切換來自杯部4d之排氣目的地，可抑制排氣中之氣體狀或霧狀之處理液的混蝕。 The substrate processing apparatus 1d is the substrate processing apparatus shown in FIG. In the same manner, the cup rotating mechanism 7 rotates the cup portion 4d in the chamber 21d and in the casing 6 without opening the chamber 21d and the casing 6, thereby providing the first exhaust mechanism 95a, An exhaust mechanism that performs the exhaust from the cup portion 4d is easily switched between the second exhaust mechanism 95b and the third exhaust mechanism 95c. Moreover, since the exhaust destination from the cup portion 4d can be switched by a mechanism having a simple structure, the structure of the substrate processing apparatus 1d can be simplified and reduced in size. Further, by switching the destination of the exhaust gas from the cup portion 4d in the chamber 21d, it is possible to suppress the corrosion of the gas-like or mist-like treatment liquid in the exhaust gas.

如上述，基板處理裝置1d中，杯排氣埠461設於杯 內側壁部43，第1腔室排氣埠群286a、第2腔室排氣埠群286b及第3腔室排氣埠群286c之腔室排氣埠281、284，係設於與杯內側壁部43相對向之腔室內側壁部255。如此，杯排氣埠461及腔室排氣埠281、284設於較杯底部42更上方，藉此可抑制處理液經由杯排氣埠461及腔室排氣埠281、284而進入排氣機構95a~95c的情形。又，杯排氣埠461及腔室排氣埠281、284係配置於基板保持部31下方，藉此可進一步抑制處理液進入排氣機構95a~95c的情形。 As described above, in the substrate processing apparatus 1d, the cup exhaust 埠 461 is provided in the cup The inner wall portion 43, the first chamber exhaust port group 286a, the second chamber exhaust port group 286b, and the chamber exhaust ports 286c of the third chamber exhaust port group 286c are provided in the cup. The side wall portion 43 faces the chamber side wall portion 255. Thus, the cup exhaust enthalpy 461 and the chamber exhaust ports 281, 284 are disposed above the cup bottom portion 42, thereby preventing the process liquid from entering the exhaust gas via the cup exhaust port 461 and the chamber exhaust ports 281, 284. The situation of the institutions 95a to 95c. Further, the cup exhaust port 461 and the chamber exhaust ports 281 and 284 are disposed below the substrate holding portion 31, whereby the processing liquid can be further prevented from entering the exhaust mechanisms 95a to 95c.

基板處理裝置1d中，與圖23所示之基板處理裝置 1c同樣地，設置由基底部311之下面朝下方突出之環狀的突出部34。因此，回流至基底部311下面的處理液，係經過突出部34之外周面而落下至杯部4d之外側杯空間45。如此，於基板處理裝置1d，可防止回流至基底部311下面之處理液移動至較突出部34更靠徑方向內側。其結果，可進一步防止處理液經由杯排氣埠461及腔室排氣埠281、284而進入排氣機構95a~95c的情形。又，突出部34之下端係位於較杯排氣埠461之下端更靠下方、或與杯排氣 埠461之下端於上下方向相同的位置。藉此，可更進一步抑制處理液經由杯排氣埠461及腔室排氣埠281、284而進入至排氣機構95a~95c的情形。 The substrate processing apparatus 1d and the substrate processing apparatus shown in FIG. Similarly to 1c, an annular projecting portion 34 that protrudes downward from the lower surface of the base portion 311 is provided. Therefore, the processing liquid that has flowed back to the lower surface of the base portion 311 passes through the outer peripheral surface of the protruding portion 34 and falls to the outer cup space 45 of the cup portion 4d. As described above, in the substrate processing apparatus 1d, it is possible to prevent the processing liquid flowing back to the lower surface of the base portion 311 from moving to the inner side in the radial direction of the protruding portion 34. As a result, it is possible to further prevent the processing liquid from entering the exhaust mechanisms 95a to 95c via the cup exhaust port 461 and the chamber exhaust ports 281 and 284. Moreover, the lower end of the protruding portion 34 is located below the lower end of the cup exhaust 461, or with the cup exhaust The lower end of 埠461 is at the same position in the up and down direction. Thereby, it is possible to further suppress the case where the processing liquid enters the exhaust mechanisms 95a to 95c via the cup exhaust port 461 and the chamber exhaust ports 281 and 284.

基板處理裝置1d中，亦可取代第1腔室排液埠群276a 之3個腔室排液埠271，而設置於周方向較長之略圓弧狀的1個腔室排液埠271a(參照圖13a)。於第2腔室排液埠群276b及第3腔室排液埠群276c中亦相同。又，基板處理裝置1d之構造亦可應用於上述之基板處理裝置1a。 In the substrate processing apparatus 1d, the first chamber draining group 276a may be replaced. The three chambers discharge the liquid 埠271, and are provided in one chamber discharge port 271a having a slightly arc shape which is long in the circumferential direction (see Fig. 13a). The same applies to the second chamber draining group 276b and the third chamber draining group 276c. Further, the structure of the substrate processing apparatus 1d can also be applied to the above-described substrate processing apparatus 1a.

基板處理裝置1d中，係如圖19及圖20所示之基板 處理裝置1b般，在杯部4d之杯內側壁部43設置大小2個之杯排氣埠461，於各腔室排氣埠群286a~286c僅設置1個腔室排氣埠281，藉由使上述2個之杯排氣埠461之一者選擇性地重疊於腔室排氣埠281，則亦可變更排氣流量。 In the substrate processing apparatus 1d, the substrate shown in FIGS. 19 and 20 is used. In the same manner as the processing apparatus 1b, two cups of exhaust gas 埠 461 are provided in the cup inner wall portion 43 of the cup portion 4d, and only one chamber exhaust port 281 is provided in each of the chamber exhaust port groups 286a to 286c. When one of the two cup exhaust ports 461 is selectively overlapped with the chamber exhaust port 281, the exhaust gas flow rate can be changed.

上述基板處理裝置1、1a~1d中亦可進行各種變更。 Various changes can be made in the substrate processing apparatuses 1 and 1a to 1d.

於圖1所示基板處理裝置1中，於腔室底部256，若設置圖4所示之腔室排氣埠群286a~286c中之至少2個腔室排氣埠群即可。圖24所示之基板處理裝置1d亦同樣地，於腔室內側壁部255中，若設置圖25所示之腔室排氣埠群286a~286c中之至少2個腔室排氣埠群即可。又，基板處理裝置1、1d之各腔室排氣埠群中，亦可僅設置大腔室排氣埠281及小腔室排氣埠284其中一者之腔室排氣埠。亦即，於腔室21、21d，若設置分別連接於彼此獨立之至少2個排氣機構的至少2個腔室排氣埠即可。以下，將該2個腔室排氣埠稱為「第1腔室排氣埠」及「第2腔室排氣埠」。 In the substrate processing apparatus 1 shown in FIG. 1, at least two of the chamber exhaust manifolds 286a to 286c shown in FIG. 4 may be provided at the bottom portion 256 of the chamber. Similarly, in the substrate processing apparatus 1d shown in FIG. 24, at least two of the chamber exhaust manifolds 286a to 286c shown in FIG. 25 may be provided in the chamber side wall portion 255. . Further, in each of the chamber exhaust manifolds of the substrate processing apparatuses 1 and 1d, only one of the large chamber exhaust port 281 and the small chamber exhaust port 284 may be provided with a chamber exhaust port. That is, at least two chamber exhaust ports respectively connected to at least two exhaust mechanisms independent of each other may be provided in the chambers 21, 21d. Hereinafter, the two chamber exhaust gases are referred to as "first chamber exhaust ports" and "second chamber exhaust ports".

在於腔室21、21d設置第1腔室排氣埠及第2腔室排 氣埠的情況，藉由使杯部4、4d旋轉而將杯排氣埠461選擇性重疊於第1腔室排氣埠或第2腔室排氣埠，則如上述般，可容易切換排氣機構造。 Providing a first chamber exhaust port and a second chamber row in the chambers 21, 21d In the case of air enthalpy, by selectively rotating the cup exhaust sill 461 to the first chamber exhaust port or the second chamber exhaust port by rotating the cup portions 4, 4d, the row can be easily switched as described above. Air machine construction.

於腔室底部256，圖4及圖26分別所示之9個腔室 排液埠271，並不一定需要設置。其中，較佳係於腔室底部256，至少設置與第1腔室排氣埠及第2腔室排氣埠分別對應的第1腔室排液埠及第2腔室排液埠。第1腔室排液埠及第2腔室排液埠係分別連接於彼此獨立的2個排液部。 At the bottom 256 of the chamber, the nine chambers shown in Figures 4 and 26, respectively. The drain 埠271 does not necessarily need to be set. Preferably, the bottom portion 256 of the chamber is provided with at least a first chamber drain port and a second chamber drain port corresponding to the first chamber exhaust port and the second chamber exhaust port, respectively. The first chamber drain port and the second chamber drain port are connected to two separate drain portions.

然後，於杯排氣埠461重疊於第1腔室排氣埠的狀 態，杯排液埠451係重疊於第1腔室排液埠；於杯排氣埠461重疊於第2腔室排氣埠的狀態，杯排液埠451係重疊於第2腔室排液埠。 藉此，如上述般，可藉由1個機構同時進行排氣目的地之切換、與排液目的地之切換。 Then, the cup exhaust 埠 461 is superimposed on the first chamber exhaust enthalpy The cup draining liquid 451 is superimposed on the first chamber draining crucible; the cup exhausting crucible 461 is superimposed on the second chamber exhausting crucible, and the cup draining liquid crucible 451 is superposed on the second chamber to discharge liquid. port. As a result, as described above, the switching of the exhaust destination and the switching of the liquid discharge destination can be simultaneously performed by one mechanism.

上述之第1腔室排氣埠及第2腔室排氣埠，亦可為例 如連接於第1排氣機構95a之大腔室排氣埠281、及連接於第2排氣機構95b之大腔室排氣埠281。此時，第1腔室排液埠及第2腔室排液埠係連接於第1排液部96a之1個腔室排液埠271、及連接於第2排液部96b之1個腔室排液埠271。 The first chamber exhaust port and the second chamber exhaust port described above may also be exemplified. The large chamber exhaust port 281 connected to the first exhaust mechanism 95a and the large chamber exhaust port 281 connected to the second exhaust mechanism 95b. At this time, the first chamber drain port and the second chamber drain port are connected to one chamber drain port 271 of the first drain portion 96a and one chamber connected to the second drain portion 96b. The chamber drains 271.

又，第1腔室排氣埠及第2腔室排氣埠，亦可為例如 連接於第3排氣機構95c之小腔室排氣埠284、及連接於第1排氣機構95a之小腔室排氣埠284。此時，第1腔室排液埠及第2腔室排液埠係連接於第3排液部96c之1個腔室排液埠271、及連接於第1排液部96a之1個腔室排液埠271。 Further, the first chamber exhaust port and the second chamber exhaust port may be, for example, The small chamber exhaust port 284 connected to the third exhaust mechanism 95c and the small chamber exhaust port 284 connected to the first exhaust mechanism 95a. At this time, the first chamber drain port and the second chamber drain port are connected to one chamber drain port 271 of the third drain portion 96c and one chamber connected to the first drain portion 96a. The chamber drains 271.

杯排氣埠461若設於杯部，則並不一定需要設於杯內 側壁部43或杯底部42。例如，杯排氣埠461亦可設於杯內側壁部43與杯底部42之境界附近。 If the cup exhaust 埠 461 is provided in the cup, it does not necessarily need to be placed in the cup. Side wall portion 43 or cup bottom portion 42. For example, the cup exhaust dam 461 may be provided near the boundary between the inner wall portion 43 of the cup and the bottom portion 42 of the cup.

杯排氣埠461亦可如圖27所示之基板處理裝置1e 般，設於杯外側壁部41。此時，上述之第1腔室排氣埠及第2腔室排氣埠(例如大腔室排氣埠281)，係於與杯外側壁部41相對向之腔室外側壁部252中，設置在與杯排氣埠461於上下方向約相同的位置。在杯排氣埠461設於杯外側壁部41的情況，較佳係設置由杯外側壁部41之上端部朝徑方向內方擴展、進而擴展至下方並與杯排氣埠461於徑方向呈相對向的屋簷部48。屋簷部48更佳係被覆杯排氣埠461之周方向的兩側。藉由設置屋簷部48，可抑制由基板9所飛散之處理液進入至杯排氣埠461。 The cup exhaust 埠 461 can also be a substrate processing apparatus 1e as shown in FIG. Generally, it is provided on the outer wall portion 41 of the cup. At this time, the first chamber exhaust port and the second chamber exhaust port (for example, the large chamber exhaust port 281) are disposed in the chamber outdoor side wall portion 252 facing the cup outer side wall portion 41. It is at the same position as the cup exhaust 埠 461 in the up and down direction. In the case where the cup exhaust dam 461 is provided on the outer wall portion 41 of the cup, it is preferable that the upper end portion of the outer wall portion 41 of the cup is expanded inward in the radial direction, and then expanded to the lower side and in the radial direction with the cup exhaust 461. It is in the opposite eaves section 48. The eaves portion 48 is preferably covered on both sides of the circumferential direction of the cup exhaust sill 461. By providing the eaves portion 48, it is possible to suppress the treatment liquid scattered by the substrate 9 from entering the cup exhaust port 461.

於圖1所示之基板處理裝置1、及圖14所示之基板 處理裝置1a，若在腔室底部256中，設置圖4及圖16所示之複數組之大腔室排氣埠281及小腔室排氣埠284中之至少1組之大腔室排氣埠281及小腔室排氣埠284即可。此時，較佳係於腔室底部256設置與大腔室排氣埠281及小腔室排氣埠284對應的2個腔室排液埠271。於圖20所示之基板處理裝置1b之腔室底部256，若設置至少1個腔室排氣埠281即可。此時，較佳係將對應至該1個腔室排氣埠281之1個腔室排液埠群設於腔室底部256。 The substrate processing apparatus 1 shown in FIG. 1 and the substrate shown in FIG. The processing device 1a, if in the bottom portion 256 of the chamber, is provided with at least one of the large chamber exhaust port 281 and the small chamber exhaust port 284 shown in FIGS. 4 and 16埠281 and small chamber exhaust 埠284. At this time, it is preferable to provide two chamber discharge ports 271 corresponding to the large chamber exhaust port 281 and the small chamber exhaust port 284 at the bottom portion 256 of the chamber. At least one of the chamber exhaust ports 281 may be provided in the chamber bottom 256 of the substrate processing apparatus 1b shown in FIG. At this time, it is preferable to provide one chamber discharge port group corresponding to the one chamber exhaust port 281 to the bottom portion 256 of the chamber.

設於腔室底部256之(內)腔室排液埠271、外腔室排 液埠277、(大)腔室排氣埠281、小腔室排氣埠284、外側凸部273、279及內側凸部283的數量及周方向的配置，亦可適當變更。設於杯底部42之(內)杯排液埠451、外杯排液埠457、(大)杯排氣埠461、小杯排氣埠464、外側凸部453及內側凸部463的數量及周方向的 配置，亦可適當變更。 The (inner) chamber draining liquid 271 and the outer chamber row disposed at the bottom 256 of the chamber The number of the liquid helium 277, the (large) chamber exhaust port 281, the small chamber exhaust port 284, the outer convex portions 273 and 279, and the inner convex portion 283, and the arrangement in the circumferential direction may be appropriately changed. The number of (inner) cup drain 451, outer cup drain 457, (large) cup exhaust 461, small cup exhaust 464, outer convex 453 and inner convex 463 provided at the bottom 42 of the cup and Circumferential Configuration can also be changed as appropriate.

於基板處理裝置1、1a~1e，設於腔室21、21a~21d 之(內)腔室排液埠271、外腔室排液埠277、(大)腔室排氣埠281、小腔室排氣埠284、外側凸部273、279及內側凸部283的數量及周方向的配置，亦可適當變更。設於杯部4、4a~4d之(內)杯排液埠451、外杯排液埠457、(大)杯排氣埠461、小杯排氣埠464、外側凸部453及內側凸部463的數量及周方向的配置，亦可適當變更。 The substrate processing apparatuses 1, 1a to 1e are provided in the chambers 21, 21a to 21d. The number of (inner) chamber drains 271, the outer chamber drains 277, the (large) chamber exhaust ports 281, the small chamber exhaust ports 284, the outer convex portions 273, 279, and the inner convex portions 283 The configuration in the circumferential direction can also be changed as appropriate. The (inner) cup draining liquid 451, the outer cup draining liquid 457, the (large) cup exhausting gas 461, the small cup exhausting gas 464, the outer convex portion 453, and the inner convex portion are provided in the cup portions 4, 4a to 4d. The number of 463 and the arrangement of the circumferential direction can also be changed as appropriate.

由基板9流入至杯部的處理液，係藉由共通配管而排 出至腔室外及殼體外，於殼體外亦可藉由閥等切換排出目的地。於此情況下，處理液用之閥或配管由於較小型，故抑制基板處理裝置1、1a~1e的大型化。 The processing liquid that has flowed into the cup portion from the substrate 9 is discharged by the common piping. Out of the chamber and outside the casing, the discharge destination can be switched by a valve or the like outside the casing. In this case, since the valve or the pipe for the treatment liquid is small, the size of the substrate processing apparatuses 1 and 1a to 1e is suppressed.

杯部4、4a~4d之杯外側壁部41、杯內側壁部43、(第 1)間隔壁44及第2間隔壁47，若為略筒狀，則亦可為略圓筒狀以外之各種形狀。 Cup outer wall portion 41 of cup portion 4, 4a to 4d, cup inner wall portion 43, (first 1) The partition wall 44 and the second partition wall 47 may have various shapes other than a substantially cylindrical shape in a slightly cylindrical shape.

腔室開關機構23並不一定需要使腔室蓋部26於上下 方向移動，例如亦可依腔室蓋部26經固定的狀態，使腔室本體25於上下方向移動。腔室21、21a~21d並不一定限定為略圓筒狀，亦可為各種形狀。上述之基板處理裝置1、1a~1e中，腔室21、21a~21d並不一定需要形成密閉空間。例如，亦可省略腔室蓋部26及頂板22，使腔室21、21a~21d為上部開放之開放腔室。 The chamber switching mechanism 23 does not necessarily need to have the chamber cover 26 up and down In the direction of movement, for example, the chamber body 25 can be moved in the up and down direction depending on the state in which the chamber cover portion 26 is fixed. The chambers 21, 21a to 21d are not necessarily limited to a substantially cylindrical shape, and may have various shapes. In the substrate processing apparatuses 1 and 1a to 1e described above, the chambers 21 and 21a to 21d do not necessarily need to form a sealed space. For example, the chamber cover portion 26 and the top plate 22 may be omitted, and the chambers 21, 21a to 21d may be open chambers that are open at the upper portion.

升降機構33並不一定需要使基板9及基板保持部31 於上下方向移動，例如亦可依基板保持部31於上下方向為固定的狀態，使杯部4b於上下方向移動。 The lifting mechanism 33 does not necessarily need to have the substrate 9 and the substrate holding portion 31 In the vertical direction, for example, the cup portion 4b can be moved in the vertical direction in a state where the substrate holding portion 31 is fixed in the vertical direction.

杯旋轉機構7之定子部71及轉子部72的形狀及構 造，亦可進行各種變更。轉子部72並不一定需要以浮游狀態進行旋轉，若於腔室21、21a~21d內設置機械性支撐轉子部72之導件等構造，沿著該導件使轉子部72進行旋轉亦可。杯旋轉機構7並不一定需要為中空馬達，亦可將軸旋轉型之馬達利用為杯旋轉機構。 The shape and structure of the stator portion 71 and the rotor portion 72 of the cup rotating mechanism 7 It can also be changed. The rotor portion 72 does not necessarily need to be rotated in a floating state, and a structure such as a guide for mechanically supporting the rotor portion 72 may be provided in the chambers 21, 21a to 21d, and the rotor portion 72 may be rotated along the guide. The cup rotating mechanism 7 does not necessarily need to be a hollow motor, and the shaft rotating type motor can also be utilized as a cup rotating mechanism.

上述基板處理裝置中，除了半導體基板以外，亦可利用於使用在液晶顯示裝置、電漿顯示器、FED(field emission display)等之顯示裝置的玻璃基板的處理。或者，上述之基板處理裝置亦可利用於光碟用基板、磁碟用基板、光磁碟用基板、光罩用基板、陶瓷基板及太陽電池用基板等之處理。 In addition to the semiconductor substrate, the substrate processing apparatus can be used for processing on a glass substrate of a display device such as a liquid crystal display device, a plasma display, or a FED (field emission display). Alternatively, the substrate processing apparatus described above may be used for processing of a substrate for a disk, a substrate for a disk, a substrate for a magneto-optical disk, a substrate for a photomask, a substrate for a ceramic substrate, and a substrate for a solar cell.

上述實施形態及各種變形例之構成，在不彼此矛盾之下亦可適當組合。 The configurations of the above-described embodiments and various modifications may be combined as appropriate without contradicting each other.

以上詳細描述說明了本發明，但上述說明為例示而非限定者。因此，在不脫離本發明範圍之下，可進行多數之變形或態樣。 The invention has been described in detail in the foregoing detailed description of the invention. Therefore, many variations or aspects may be made without departing from the scope of the invention.

1‧‧‧基板處理裝置 1‧‧‧Substrate processing unit

4‧‧‧杯部 4‧‧‧ Cup

5‧‧‧處理液供給部 5‧‧‧Processing liquid supply department

6‧‧‧殼體 6‧‧‧Shell

7‧‧‧杯旋轉機構 7‧‧‧ cup rotating mechanism

9‧‧‧基板 9‧‧‧Substrate

10‧‧‧控制部 10‧‧‧Control Department

21‧‧‧腔室 21‧‧‧ chamber

22‧‧‧頂板 22‧‧‧ top board

23‧‧‧腔室開關機構 23‧‧‧Case Switching Mechanism

25‧‧‧腔室本體 25‧‧‧ chamber body

26‧‧‧腔室蓋部 26‧‧‧Cell cover

31‧‧‧基板保持部 31‧‧‧Substrate retention department

32‧‧‧基板旋轉機構 32‧‧‧Substrate rotation mechanism

41‧‧‧杯外側壁部 41‧‧‧ cup outer wall

42‧‧‧杯底部 42‧‧‧ cup bottom

43‧‧‧杯內側壁部 43‧‧‧ cup inner wall

44‧‧‧第1間隔壁 44‧‧‧1st partition wall

45‧‧‧外側杯空間 45‧‧‧Outer cup space

46‧‧‧內側杯空間 46‧‧‧ inside cup space

51‧‧‧上部噴嘴 51‧‧‧ upper nozzle

52‧‧‧下部噴嘴 52‧‧‧ Lower nozzle

61‧‧‧殼體底部 61‧‧‧Bottom of the casing

62‧‧‧殼體側壁部 62‧‧‧Shell side wall

63‧‧‧殼體蓋部 63‧‧‧Shell cover

64‧‧‧搬入口 64‧‧‧ Move in

65‧‧‧蓋部 65‧‧‧ Cover

71‧‧‧定子部 71‧‧‧ stator

72‧‧‧轉子部 72‧‧‧Rotor Department

91‧‧‧上面 91‧‧‧above

92‧‧‧下面 92‧‧‧ below

221‧‧‧被保持部 221‧‧‧ Keeped Department

224‧‧‧板本體部 224‧‧‧ board body

225‧‧‧板側壁部 225‧‧‧Shelf side wall

226‧‧‧第2卡合部 226‧‧‧2nd engagement department

251‧‧‧腔室下面部 251‧‧‧ below the chamber

252‧‧‧腔室外側壁部 252‧‧‧outdoor side wall

254‧‧‧下面中央部 254‧‧‧Central Department below

255‧‧‧腔室內側壁部 255‧‧‧ interior wall

256‧‧‧腔室底部 256‧‧‧Bottom of the chamber

261‧‧‧板保持部 261‧‧‧ Board Maintenance Department

271‧‧‧(內)腔室排氣埠 271‧‧‧(inside) chamber exhaust

272‧‧‧底部突出部 272‧‧‧Bottom protrusion

276a‧‧‧第1腔室排液埠群 276a‧‧‧1st chamber drainage group

281‧‧‧(大)腔室排氣埠 281‧‧‧(large) chamber exhaust

282‧‧‧底部突出部 282‧‧‧Bottom protrusion

286a‧‧‧第1腔室排氣埠群 286a‧‧‧1st chamber exhaust manifold

311‧‧‧基底部 311‧‧‧ base

312‧‧‧夾具 312‧‧‧Clamp

314‧‧‧第1卡合部 314‧‧‧1st engagement

321‧‧‧旋轉軸 321‧‧‧Rotary axis

451‧‧‧(內)杯排液埠 451‧‧‧(内) cup draining machine

452‧‧‧底部突出部 452‧‧‧Bottom protrusion

461‧‧‧杯排氣埠 461‧‧‧ cup exhaust

462‧‧‧底部突出部 462‧‧‧Bottom protrusion

J1‧‧‧中心軸 J1‧‧‧ central axis

Claims (33)

一種基板處理裝置，係對基板進行處理者，其具備：依水平狀態保持基板之基板保持部；於上述基板上供給處理液之處理液供給部；設有杯排氣埠，承接來自上述基板之處理液的杯部；於內部收容上述基板保持部及上述杯部之腔室；以朝上下方向之中心軸為中心，使上述杯部進行旋轉的杯旋轉機構；與藉上述杯旋轉機構使上述杯部旋轉，決定上述杯排氣埠於以上述中心軸為中心之周方向之位置的控制部；於上述腔室，設置於上述周方向排列的第1腔室排氣埠及第2腔室排氣埠；上述控制部係藉由控制上述杯旋轉機構，使上述杯排氣埠選擇性地重疊於上述第1腔室排氣埠或上述第2腔室排氣埠；在上述杯排氣埠重疊於上述第1腔室排氣埠之狀態，藉由連接於上述第1腔室排氣埠之第1排氣機構，使上述杯部內之氣體經由上述杯排氣埠及上述第1腔室排氣埠而排出至上述腔室外；在上述杯排氣埠重疊於上述第2腔室排氣埠之狀態，藉由連接於上述第2腔室排氣埠之第2排氣機構，使上述杯部內之氣體經由上述杯排氣埠及上述第2腔室排氣埠而排出至上述腔室外。 A substrate processing apparatus for processing a substrate, comprising: a substrate holding portion that holds a substrate in a horizontal state; a processing liquid supply portion that supplies a processing liquid on the substrate; and a cup exhaust port that receives the substrate from the substrate a cup portion of the treatment liquid; a chamber for accommodating the substrate holding portion and the cup portion therein; a cup rotating mechanism for rotating the cup portion around a central axis of the vertical direction; and the cup rotating mechanism The cup portion rotates to determine a control portion of the cup exhaust port in a circumferential direction around the central axis; and the chamber is provided in the first chamber exhaust port and the second chamber arranged in the circumferential direction The control unit controls the cup rotating mechanism to selectively overlap the cup exhaust port in the first chamber exhaust port or the second chamber exhaust port;埠 superimposed on the first chamber exhaust port, and the gas in the cup portion is passed through the cup exhaust port and the first chamber by a first exhaust mechanism connected to the first chamber exhaust port Room exhaust The chamber is outside the chamber; and the gas in the cup portion is passed through a second exhaust mechanism connected to the second chamber exhaust port while the cup exhaust port is superposed on the second chamber exhaust port The cup exhaust port and the second chamber exhaust port are discharged to the outside of the chamber. 如申請專利範圍第1項之基板處理裝置，其中，上述杯排氣埠設於上述杯部底部；上述第1腔室排氣埠及上述第2腔室排氣埠設於上述腔室底部。 The substrate processing apparatus according to claim 1, wherein the cup exhaust port is provided at a bottom portion of the cup portion, and the first chamber exhaust port and the second chamber exhaust port are provided at a bottom portion of the chamber. 如申請專利範圍第2項之基板處理裝置，其中，在上述杯排氣 埠位於由上述第1腔室排氣埠及上述第2腔室排氣埠朝上述周方向離間的位置的狀態下，使上述杯排氣埠之下端接近上述腔室之上述底部，或使上述第1腔室排氣埠之上端及上述第2腔室排氣埠之上端接近上述杯部之上述底部，藉此使經由上述杯排氣埠之上述杯部內之氣體吸引停止。 The substrate processing apparatus of claim 2, wherein the cup is exhausted The crucible is located at a position separated from the first chamber exhaust port and the second chamber exhaust port in the circumferential direction, and the lower end of the cup exhaust port is close to the bottom portion of the chamber, or the above The upper end of the first chamber exhaust port and the upper end of the second chamber exhaust port are close to the bottom portion of the cup portion, thereby stopping the suction of gas in the cup portion passing through the cup exhaust port. 如申請專利範圍第2項之基板處理裝置，其中，於上述杯部之上述底部設置杯排液埠；於上述腔室之上述底部，設置於上述周方向排列之第1腔室排液埠及第2腔室排液埠；在上述杯排氣埠重疊於上述第1腔室排氣埠之狀態，上述杯排液埠與上述第1腔室排液埠重疊，使上述杯部內之處理液排出至連接於上述第1腔室排液埠之上述腔室外的第1排液部；在上述杯排氣埠重疊於上述第2腔室排氣埠之狀態，上述杯排液埠與上述第2腔室排液埠重疊，使上述杯部內之處理液排出至連接於上述第2腔室排液埠之上述腔室外的第2排液部；上述第1腔室排液埠之上述周方向之長度較上述杯排液埠之上述周方向之長度長；由上述杯排液埠重疊於上述第1腔室排液埠、上述杯排氣埠重疊於上述第1腔室排氣埠之狀態，一邊維持上述杯排液埠與上述第1腔室排液埠的重複，一邊旋轉上述杯部，藉此使上述杯排氣埠移動至由上述第1腔室排氣埠偏離的位置；上述杯排氣埠係設於在上述杯部之上述底部所設置並朝下方突出之底部突出部內；上述底部突出部之下端面係垂直於上述上下方向； 在上述杯排氣埠位於由上述第1腔室排氣埠偏離之上述位置的狀態下，使上述第1腔室排氣埠之上端接近上述底部突出部之上述下端面，藉此使經由上述杯排氣埠之上述杯部內的氣體吸引停止。 The substrate processing apparatus of claim 2, wherein a cup draining liquid is provided at the bottom of the cup portion; and the first chamber is disposed at the bottom of the chamber, and the first chamber is disposed in the circumferential direction. a second chamber discharge port; wherein the cup discharge port overlaps the first chamber discharge port in a state in which the cup exhaust port overlaps the first chamber exhaust port, and the treatment liquid in the cup portion is overlapped Discharging to a first liquid discharge portion connected to the outside of the chamber of the first chamber discharge port; and the cup discharge port is overlapped with the second chamber exhaust port, the cup drain liquid and the first The two chamber drains are overlapped, and the processing liquid in the cup portion is discharged to the second liquid discharge portion connected to the chamber outside the chamber of the second chamber draining chamber; the circumferential direction of the first chamber draining port The length is longer than the length of the circumferential direction of the cup draining raft; the state in which the cup drain 埠 is superposed on the first chamber drain 埠 and the cup exhaust 埠 overlaps the first chamber exhaust 埠Rotating while maintaining the repetition of the above-mentioned cup draining liquid and the above-mentioned first chamber draining crucible a cup portion for moving the cup exhaust port to a position deviated from the first chamber exhaust port; the cup exhaust port is provided at a bottom portion of the cup portion provided to protrude downwardly Inside the portion; the lower end surface of the bottom protruding portion is perpendicular to the upper and lower directions; In a state where the cup exhaust port is located at the position deviated by the first chamber exhaust port, the upper end of the first chamber exhaust port is brought close to the lower end surface of the bottom protruding portion, thereby The suction of the gas in the cup portion of the cup exhaust port is stopped. 如申請專利範圍第1項之基板處理裝置，其中，上述杯部係以上述中心軸為中心之環狀；上述杯部具備：圓環狀底部；由上述底部之內周部朝上方擴展之圓筒狀之內側壁部；與由上述底部之外周部朝上方擴展之圓筒狀之外側壁部；於上述內側壁部或上述外側壁部設置上述杯排氣埠；於與上述杯部之上述內側壁部或上述外側壁部相對向的上述腔室之側壁部，設置上述第1腔室排氣埠及上述第2腔室排氣埠。 The substrate processing apparatus according to claim 1, wherein the cup portion has an annular shape centering on the central axis, and the cup portion includes an annular bottom portion and a circle extending upward from an inner peripheral portion of the bottom portion. a cylindrical outer wall portion; a cylindrical outer wall portion extending upward from the outer peripheral portion of the bottom portion; and the cup exhausting portion provided on the inner side wall portion or the outer side wall portion; The first chamber exhaust port and the second chamber exhaust port are provided on a side wall portion of the chamber facing the inner wall portion or the outer wall portion. 如申請專利範圍第5項之基板處理裝置，其中，在上述杯排氣埠位於由上述第1腔室排氣埠及上述第2腔室排氣埠朝上述周方向離間之位置的狀態下，使上述杯排氣埠接近上述上述腔室之上述側壁部，藉此使經由上述杯排氣埠之上述杯部內的氣體吸引停止。 The substrate processing apparatus according to claim 5, wherein the cup exhaust port is located at a position separated from the first chamber exhaust port and the second chamber exhaust port toward the circumferential direction, The cup exhaust port is brought close to the side wall portion of the chamber, whereby the gas in the cup portion passing through the cup exhaust port is stopped. 如申請專利範圍第1項之基板處理裝置，其中，於上述杯部之上述底部設置杯排液埠；於上述腔室之上述底部，設置排列於上述周方向之第1腔室排液埠及第2腔室排液埠；在上述杯排氣埠重疊於上述第1腔室排氣埠的狀態，上述杯排液埠與上述第1腔室排液埠重疊，使上述杯部內之處理液排出至連接於上述第1腔室排液埠之上述腔室外的第1排液部；在上述杯排氣埠重疊於上述第2腔室排氣埠之狀態，上述杯排液 埠與上述第2腔室排液埠重疊，使上述杯部內之處理液排出至連接於上述第2腔室排液埠之上述腔室外的第2排液部。 The substrate processing apparatus according to claim 1, wherein a cup draining liquid is provided at the bottom of the cup portion; and a liquid discharge port of the first chamber arranged in the circumferential direction is provided at the bottom of the chamber; a second chamber discharge port; wherein the cup discharge port overlaps the first chamber discharge port in a state in which the cup exhaust port overlaps the first chamber exhaust port, and the treatment liquid in the cup portion is overlapped Discharging to the first liquid discharge portion connected to the outside of the chamber of the first chamber discharge port; and the cup discharge liquid is superimposed on the second chamber exhaust port The crucible is overlapped with the second chamber discharge port, and the treatment liquid in the cup portion is discharged to the second liquid discharge portion connected to the chamber outside the chamber of the second chamber discharge port. 如申請專利範圍第7項之基板處理裝置，其中，於上述腔室之上述底部，設置另一個第1腔室排液埠，其係與上述第1腔室排液埠及上述第2腔室排液埠一起排列於上述周方向，並連接上述第1排液部；在上述杯排液埠重疊於上述另一個第1腔室排液埠之狀態，使上述杯部內之處理液排出至上述第1排液部；上述杯排氣埠係位於由上述第1腔室排氣埠及上述第2腔室排氣埠於上述周方向呈離間的位置。 The substrate processing apparatus of claim 7, wherein the first chamber discharge port is disposed at the bottom of the chamber, and the first chamber discharge port and the second chamber are The liquid discharge ports are arranged in the circumferential direction and connected to the first liquid discharge portion; and the liquid discharge liquid in the cup portion is superimposed on the liquid discharge port of the other first chamber, and the treatment liquid in the cup portion is discharged to the above The first liquid discharge unit is located at a position where the first chamber exhaust port and the second chamber exhaust port are separated from each other in the circumferential direction. 如申請專利範圍第7項之基板處理裝置，其中，上述第1腔室排液埠之上述周方向之長度較上述杯排液埠之上述周方向之長度長；由上述杯排液埠重疊於上述第1腔室排液埠、上述杯排氣埠重疊於上述第1腔室排氣埠之狀態，一邊維持上述杯排液埠與上述第1腔室排液埠的重複，一邊旋轉上述杯部，藉此使上述杯排氣埠移動至由上述第1腔室排氣埠偏離的位置。 The substrate processing apparatus according to claim 7, wherein a length of the first chamber discharge port in the circumferential direction is longer than a length of the cup discharge port in the circumferential direction; and the cup drain is overlapped with The first chamber discharge port and the cup exhaust port are overlapped with the first chamber exhaust port, and the cup is rotated while maintaining the overlap of the cup drain port and the first chamber drain port. The portion moves the cup exhaust port to a position deviated from the first chamber exhaust port. 如申請專利範圍第7項之基板處理裝置，其中，上述杯部係以上述中心軸為中心之環狀；上述杯部具備：圓環狀之上述底部；由上述底部之內周部朝上方擴展之圓筒狀之內側壁部；由上述底部之外周部朝上方擴展之圓筒狀之外側壁部；與於上述內側壁部與上述外側壁部之間由上述底部朝上方擴展之 圓筒狀之間隔壁；來自上述處理液供給部之處理液係流入至上述杯部之上述外側壁部與上述間隔壁之間的空間；上述杯排液埠係位於較上述間隔壁更靠以上述中心軸為中心之徑方向外側；上述杯排氣埠係位於較上述間隔壁更靠上述徑方向內側。 The substrate processing apparatus according to claim 7, wherein the cup portion has an annular shape centered on the central axis; the cup portion includes an annular bottom portion; and the inner peripheral portion of the bottom portion expands upward a cylindrical inner wall portion; a cylindrical outer wall portion extending upward from the outer peripheral portion of the bottom portion; and an inner side wall portion and the outer side wall portion extending upward from the bottom portion a cylindrical partition wall; the processing liquid from the processing liquid supply unit flows into a space between the outer wall portion of the cup portion and the partition wall; and the cup draining liquid is located closer to the partition wall The central axis is a radially outer side of the center, and the cup exhaust enthalpy is located on the inner side in the radial direction of the partition wall. 如申請專利範圍第10項之基板處理裝置，其中，進一步具備使上述基板保持部相對於上述杯部於上述上下方向相對移動的升降機構；上述杯部係進一步具備於上述間隔壁與上述外側壁部之間由上述底部朝上方擴展的筒狀之另一個間隔壁；上述杯排液埠係位於較上述另一個間隔壁更靠上述徑方向內側；於上述杯部之上述底部，設置有位於較上述另一個間隔壁更靠上述徑方向外側的其他杯排液埠；於上述腔室之上述底部，設置其他腔室排液埠，其係位於較上述第1腔室排液埠及上述第2腔室排液埠更靠上述徑方向外側，並連接其他排液部；藉由上述升降機構，使上述基板在相對於上述杯部之第1位置與較上述第1位置更上方之第2位置之間，與上述基板保持部一起移動；在上述基板位於上述第1位置之狀態，由上述處理液供給部供給至上述基板上之處理液，流入至上述杯部之上述另一個間隔壁與上述間隔壁之間的空間；在上述基板位於上述第2位置之狀態，由上述處理液供給部供給 至上述基板上之處理液，流入至上述杯部之上述外側壁部與上述另一個間隔壁之間的空間；上述其他杯排液埠重疊於上述其他腔室排液埠，使處理液排出至上述腔室外之上述其他排液部。 The substrate processing apparatus according to claim 10, further comprising: a lifting mechanism that relatively moves the substrate holding portion relative to the cup portion in the vertical direction; the cup portion further includes the partition wall and the outer side wall a second partition wall between the portions extending upward from the bottom portion; the cup draining liquid is located on the inner side of the radial direction of the other partition wall; and the bottom portion of the cup portion is disposed at the bottom portion The other partition wall is further disposed on the outer side of the radial direction of the other side; at the bottom of the chamber, another chamber draining liquid is provided, which is located in the first chamber discharge tank and the second The chamber draining raft is further disposed on the outer side in the radial direction and connected to the other draining portion; the lifting mechanism is configured to position the substrate at a first position relative to the cup portion and a second position above the first position And moving together with the substrate holding portion; and the processing liquid supplied from the processing liquid supply unit to the substrate in a state where the substrate is located at the first position, and flowing To a space between the partition wall and the partition wall between said portion of the cup above the other; in the substrate is positioned at the second position, the processing liquid supply is supplied by the unit The processing liquid on the substrate flows into a space between the outer wall portion of the cup portion and the other partition wall; the other cup draining liquid is superposed on the other chamber draining liquid to discharge the processing liquid to The other liquid discharge portion of the chamber outside the chamber. 如申請專利範圍第10項之基板處理裝置，其中，上述基板保持部係具備以上述中心軸為中心之圓板狀之保持部本體；上述保持部本體係於上述杯部之上方與上述杯部在上述上下方向呈相對向；設置有由上述保持部本體之下面朝下方突出，在較上述間隔壁更靠徑方向外側、或與上述間隔壁於徑方向相同之位置包圍上述中心軸周圍的環狀之突出部。 The substrate processing apparatus according to claim 10, wherein the substrate holding portion includes a disk-shaped holding portion body centered on the central axis; and the holding portion of the holding portion is above the cup portion and the cup portion a direction in which the center axis is surrounded by a lower surface of the holding portion, and a ring extending outward from the partition wall in the radial direction or at the same position as the partition wall in the radial direction. a protruding part. 如申請專利範圍第1項之基板處理裝置，其中，上述基板保持部係具備以上述中心軸為中心之圓板狀的保持部本體；上述保持部本體係於上述杯部之上方與上述杯部在上述上下方向呈相對向；設置有由上述保持部本體之下面朝下方突出且包圍上述中心軸周圍的環狀之突出部。 The substrate processing apparatus according to claim 1, wherein the substrate holding portion includes a disk-shaped holding portion body centered on the central axis; and the holding portion of the holding portion is above the cup portion and the cup portion The upper and lower directions are opposed to each other, and an annular protruding portion that protrudes downward from the lower surface of the holding portion main body and surrounds the center axis is provided. 如申請專利範圍第1至13項中任一項之基板處理裝置，其中，上述杯旋轉機構係具備：配置於上述腔室內，安裝於上述杯部之環狀之轉子部；與於上述腔室外配置於上述轉子部周圍，並與上述轉子部之間產生旋轉力的定子部。 The substrate processing apparatus according to any one of claims 1 to 13, wherein the cup rotating mechanism includes: an annular rotor portion disposed in the chamber and attached to the cup portion; and the chamber A stator portion disposed around the rotor portion and generating a rotational force with the rotor portion. 如申請專利範圍第14項之基板處理裝置，其中，上述轉子部係藉由與上述定子部之間作用的磁力，於上述腔室內依浮游狀態進行旋轉。 The substrate processing apparatus according to claim 14, wherein the rotor portion is rotated in a floating state in the chamber by a magnetic force acting between the stator portion and the stator portion. 如申請專利範圍第1至13項中任一項之基板處理裝置，其中，上述腔室係配置上述基板保持部及上述杯部，且形成密閉空間的密閉空間形成部。 The substrate processing apparatus according to any one of claims 1 to 13, wherein the chamber is provided with the substrate holding portion and the cup portion, and a sealed space forming portion that forms a sealed space. 一種基板處理裝置，係對基板進行處理者，其具備：依水平狀態保持基板之基板保持部；於上述基板上供給處理液之處理液供給部；於底部設有杯排氣埠，承接來自上述基板之處理液的杯部；於內部收容上述基板保持部及上述杯部，且於底部設置腔室排氣埠的腔室；以朝上下方向之中心軸為中心，使上述杯部進行旋轉的杯旋轉機構；與藉上述杯旋轉機構使上述杯部旋轉，決定上述杯排氣埠於以上述中心軸為中心之周方向之位置的控制部；在上述杯排氣埠重疊於上述腔室排氣埠之狀態，藉由連接於上述腔室排氣埠之排氣機構，使上述杯部內之氣體經由上述杯排氣埠及上述腔室排氣埠而排出至上述腔室外；藉由上述控制部控制上述杯旋轉機構，變更上述杯排氣埠與上述腔室排氣埠的重複面積，藉此使由上述排氣機構所進行之來自上述腔室的排氣流量變更。 A substrate processing apparatus for processing a substrate, comprising: a substrate holding portion for holding a substrate in a horizontal state; a processing liquid supply portion for supplying a processing liquid on the substrate; and a cup exhaust port at a bottom portion; a cup portion of the processing liquid of the substrate; a chamber in which the substrate holding portion and the cup portion are housed inside, and a chamber exhaust port is provided at the bottom portion; and the cup portion is rotated about a central axis in the vertical direction a cup rotating mechanism; and a control unit that rotates the cup portion by the cup rotating mechanism to determine a position of the cup exhaust port in a circumferential direction around the central axis; and the cup exhaust port overlaps the chamber row In a state of air enthalpy, the gas in the cup portion is discharged to the outside of the chamber through the cup exhaust port and the chamber exhaust port by an exhaust mechanism connected to the chamber exhaust port; Controlling the cup rotating mechanism to change the overlapping area of the cup exhaust port and the chamber exhaust port, thereby changing the flow rate of the exhaust gas from the chamber by the exhaust mechanism . 如申請專利範圍第17項之基板處理裝置，其中，上述腔室排氣埠係具備：大腔室排氣埠；及小腔室排氣埠，係與上述大腔室排氣埠一起排列於上述周方向，面積小於上述大腔室排氣埠； 上述杯排氣埠與上述腔室排氣埠之重複面積的變更，係使上述杯排氣埠選擇性地重疊於上述大腔室排氣埠或上述小腔室排氣埠。 The substrate processing apparatus of claim 17, wherein the chamber exhaust system comprises: a large chamber exhaust port; and a small chamber exhaust port arranged together with the large chamber exhaust port; In the above circumferential direction, the area is smaller than the above-mentioned large chamber exhaust enthalpy; The change in the overlap area between the cup exhaust port and the chamber exhaust port is such that the cup exhaust port selectively overlaps the large chamber exhaust port or the small chamber exhaust port. 如申請專利範圍第18項之基板處理裝置，其中，上述杯排氣埠之下端中與上述小腔室排氣埠之重複區域除外的非重複區域，係藉由接近上述腔室之上述底部而被閉塞。 The substrate processing apparatus of claim 18, wherein the non-repetitive area except the overlapping area of the small chamber exhaust port in the lower end of the cup exhaust port is close to the bottom of the chamber. Being occluded. 如申請專利範圍第19項之基板處理裝置，其中，上述小腔室排氣埠係設置於在上述腔室之上述底部所設置並朝上方突出的底部突出部內；上述底部突出部之上端面係垂直於上述上下方向；上述杯排氣埠之上述非重複區域，係藉由接近上述底部突出部之上述上端面而被閉塞。 The substrate processing apparatus of claim 19, wherein the small chamber exhaust system is disposed in a bottom protrusion portion provided at the bottom portion of the chamber and protruding upward; the upper end portion of the bottom protrusion portion is The vertical direction is perpendicular to the vertical direction; the non-overlapping region of the cup exhaust port is closed by being close to the upper end surface of the bottom protrusion. 如申請專利範圍第18項之基板處理裝置，其中，由上述杯排氣埠重疊於上述大腔室排氣埠及上述小腔室排氣埠其中一者之腔室排氣埠的狀態，維持上述杯排氣埠與上述腔室排氣埠之一之重複，並使上述杯部僅旋轉微小角度，藉此變更上述杯排氣埠與上述腔室排氣埠之一的重複面積，而對由上述排氣機構所進行之來自上述腔室的排氣流量進行微調整。 The substrate processing apparatus of claim 18, wherein the state in which the cup exhaust port overlaps the chamber exhaust port of the large chamber exhaust port and the small chamber exhaust port is maintained. Repeating one of the cup exhaust port and one of the chamber exhaust ports, and rotating the cup portion only by a slight angle, thereby changing a repeating area of the cup exhaust port and the chamber exhaust port, and The flow rate of the exhaust gas from the chamber by the exhaust mechanism is finely adjusted. 如申請專利範圍第17項之基板處理裝置，其中，上述杯排氣埠係具備：大杯排氣埠；及小杯排氣埠，係與上述大杯排氣埠一起排列於上述周方向，面積小於上述大杯排氣埠；上述杯排氣埠與上述腔室排氣埠之重複面積的變更，係使上述大杯排氣埠或上述小杯排氣埠選擇性地重疊於上述腔室排氣埠。 The substrate processing apparatus according to claim 17, wherein the cup exhaust system includes: a large cup exhaust port; and a small cup exhaust port arranged in the circumferential direction together with the large cup exhaust port; The area is smaller than the large-cup exhaust enthalpy; the change of the overlapping area of the cup exhaust enthalpy and the chamber exhaust enthalpy is such that the large-cup exhaust enthalpy or the small-cup exhaust enthalpy selectively overlaps the chamber Exhaust gas. 如申請專利範圍第22項之基板處理裝置，其中，上述腔室排氣埠之上述端中與上述小杯排氣埠之重複區域除外的非重複區域，係藉由接近上述杯部之上述底部而被閉塞。 The substrate processing apparatus of claim 22, wherein the non-repetitive region except the overlapping region of the small-cup exhaust port in the end of the chamber exhaust port is close to the bottom portion of the cup portion And was blocked. 如申請專利範圍第23項之基板處理裝置，其中，上述小杯排氣埠係設置於在上述杯部之上述底部所設置並朝下方突出的底部突出部內；上述底部突出部之下端面係垂直於上述上下方向；上述腔室排氣埠之上述非重複區域，係藉由接近上述底部突出部之上述下端面而被閉塞。 The substrate processing apparatus according to claim 23, wherein the small cup exhausting raft is disposed in a bottom protruding portion provided at the bottom portion of the cup portion and protruding downward; the lower end surface of the bottom protruding portion is vertical In the vertical direction, the non-overlapping region of the chamber exhaust port is closed by being close to the lower end surface of the bottom protrusion. 如申請專利範圍第22項之基板處理裝置，其中，由上述大杯排氣埠及上述小杯排氣埠其中一者之杯排氣埠重疊於上述腔室排氣埠的狀態，維持上述杯排氣埠之一與上述腔室排氣埠之重複，並使上述杯部僅旋轉微小角度，藉此變更上述杯排氣埠之一與上述腔室排氣埠的重複面積，而對由上述排氣機構所進行之來自上述腔室的排氣流量進行微調整。 The substrate processing apparatus of claim 22, wherein the cup exhaustor is overlapped with the chamber exhaust port by one of the large cup exhaust port and the small cup exhaust port, and the cup is maintained Repetitive one of the exhaust enthalpy and the chamber exhaust enthalpy, and rotating the cup portion only by a slight angle, thereby changing the overlapping area of one of the cup exhaust enthalpy and the chamber exhaust enthalpy The flow rate of the exhaust gas from the chamber by the exhaust mechanism is finely adjusted. 如申請專利範圍第17項之基板處理裝置，其中，上述杯排氣埠與上述腔室排氣埠之重複面積的變更，係藉由一邊維持上述杯排氣埠與上述腔室排氣埠之重複、一邊使上述杯部旋轉而實現。 The substrate processing apparatus of claim 17, wherein the change in the overlapping area between the cup exhaust port and the chamber exhaust port is performed by maintaining the cup exhaust port and the chamber exhaust port This is achieved by repeating the rotation of the cup portion. 如申請專利範圍第26項之基板處理裝置，其中，上述腔室排氣埠之上述端中與上述杯排氣埠之重複區域除外的非重複區域，係藉由接近上述杯部之上述底部而被閉塞；上述杯排氣埠下端中與上述腔室排氣埠重複區域除外之非重複區域，係藉由接近上述腔室之上述底部而被閉塞。 The substrate processing apparatus of claim 26, wherein the non-repetitive region except the overlapping region of the cup exhaust port in the end of the chamber exhaust port is close to the bottom portion of the cup portion Blocked; the non-repetitive region of the lower portion of the cup exhaust vent which is excluded from the chamber exhaust enthalpy is occluded by approaching the bottom of the chamber. 如申請專利範圍第27項之基板處理裝置，其中，上述杯排氣埠係設置於在上述杯部之上述底部所設置並朝下方突出的底部突 出部內；上述底部突出部之下端面係垂直於上述上下方向；上述腔室排氣埠之上述非重複區域，係藉由接近上述底部突出部之上述下端面而被閉塞。 The substrate processing apparatus according to claim 27, wherein the cup exhausting system is provided at a bottom portion of the bottom portion of the cup portion and protruding downward The lower end surface of the bottom protruding portion is perpendicular to the vertical direction; and the non-overlapping region of the chamber exhaust port is closed by being close to the lower end surface of the bottom protruding portion. 如申請專利範圍第27項之基板處理裝置，其中，上述腔室排氣埠係設置於在上述腔室之上述底部所設置並朝上方突出的其他底部突出部內；上述其他底部突出部之上端面係垂直於上述上下方向；上述杯排氣埠之上述非重複區域，係藉由接近上述其他底部突出部之上述上端面而被閉塞。 The substrate processing apparatus of claim 27, wherein the chamber exhaust enthalpy is disposed in another bottom protrusion provided at the bottom of the chamber and protruding upward; the upper end surface of the other bottom protrusion The vertical direction is perpendicular to the vertical direction; the non-overlapping region of the cup exhaust port is closed by being close to the upper end surface of the other bottom protrusion. 如申請專利範圍第17項之基板處理裝置，其中，在上述杯排氣埠位於由上述腔室排氣埠朝上述周方向呈離間之位置的狀態下，使上述杯排氣埠之下端接近上述腔室之上述底部，或使上述腔室排氣埠之上端接近上述杯部之上述底部，藉此使經由上述杯排氣埠之上述杯部內的氣體吸引停止。 The substrate processing apparatus according to claim 17, wherein the lower end of the cup exhaust port is close to the above state in a state where the cup exhaust port is located at a position apart from the circumferential direction by the chamber exhaust port The bottom portion of the chamber or the upper end of the chamber exhaust port is adjacent to the bottom portion of the cup portion, thereby stopping the suction of gas in the cup portion passing through the cup exhaust port. 如申請專利範圍第17至30項中任一項之基板處理裝置，其中，上述杯旋轉機構係具備：配置於上述腔室內，安裝於上述杯部之環狀之轉子部；與於上述腔室外配置於上述轉子部周圍，並與上述轉子部之間產生旋轉力的定子部。 The substrate processing apparatus according to any one of claims 17 to 30, wherein the cup rotation mechanism includes: an annular rotor portion that is disposed in the chamber and is attached to the cup portion; A stator portion disposed around the rotor portion and generating a rotational force with the rotor portion. 如申請專利範圍第31項之基板處理裝置，其中，上述轉子部係藉由與上述定子部之間作用的磁力，於上述腔室內依浮游狀態進行旋轉。 The substrate processing apparatus according to claim 31, wherein the rotor portion is rotated in a floating state in the chamber by a magnetic force acting between the stator portion. 如申請專利範圍第17至30項中任一項之基板處理裝置，其中，上述腔室係配置上述基板保持部及上述杯部，且形成密閉空間 的密閉空間形成部。 The substrate processing apparatus according to any one of claims 17 to 30, wherein the chamber is provided with the substrate holding portion and the cup portion, and a closed space is formed. The confined space forming part.
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