TWI525887B - Air-guiding electrode plate - Google Patents

Description

Gas guiding electrode plate

The present invention relates to an electrode plate, and more particularly to a gas guiding electrode plate having a gas guiding and a uniform potential distribution.

Traditionally, plasma processing [eg, plasma-assisted chemical vapor deposition, plasma-assisted etching, or plasma polymer] is widely used in various industries, such as thin-film transistor display plants, solar plants, or fabs. .

Taking a microcrystalline enamel film deposited by a solar power plant as an example, a plasma enhaced chemical vapor deposition (PECVD) device is selected, and a hydrogen gas and a decane gas mixture are introduced into the device to deposit micro Crystalline film. Prior to this, the RF current is first applied to generate an electric field required for the reaction between the upper and lower electrodes, so that electrons dispersed by the electric field collide with the plasma generated to generate a gas [for example, argon gas] and destroy the gas atom. Or a bond between the molecules to form a plasma state, so that the free electrons in the plasma collide with the gas molecules mixed by the hydrogen gas and the decane, and gradually ionize the mixed gas molecules to deposit a microcrystalline enamel film.

As the industry's production capacity and quality requirements continue to increase, it is necessary to improve the linear acceleration of ions in the plasma due to the electric field, and the ions are excessively bombarded into the film-forming substrate, resulting in excessive bending of the film deposited on the substrate. In response to the gradual increase in the size of the film-forming substrate, it is necessary to increase the speed and uniformity of the plasma generation in order to speed up the rate and quality of the deposited film.

The traditional method is to increase the operating frequency of the upper and lower electrodes by inputting higher RF power, so as to increase the electric field intensity generated between the upper and lower electrodes, so that the plasma generated gas can be quickly dissociated in the electric field, thereby achieving an improved gas dissociation rate. And the purpose of quickly generating the plasma state.

However, when the operating frequency of the upper and lower electrodes is gradually increased to a normal operating frequency of 13.56 MHz or higher, even up to VHF (30 to 100 MHz), the wavelength of the output electromagnetic wave is gradually shortened, and a standing wave is easily generated on the surface of the electrode. The standing wave effect forces the electromagnetic wave transmitted on the electrode to change due to its phase, which causes the electric field to fluctuate; even, the electric field distribution between the upper and lower electrodes is uneven, resulting in the upper and lower electrodes. The voltage is unstable, which affects the distribution uniformity of plasma generation, which makes the film after deposition cause different thickness, which seriously reduces the quality and efficiency of the deposited film.

Please refer to FIG. 1 , for example, the Patent No. M342906 of the Republic of China, which discloses an electrode 9 having a uniform electric field distribution, comprising an electrode sheet 91 and correspondingly etched into the four sides of the electrode sheet 91. The hole 92 controls the electric field intensity distribution on the edge of the electrode sheet 91 by the perturbation slot 92, thereby increasing the uniformity of plasma generation.

Although the conventional electrode 9 can avoid the standing wave effect due to the high frequency action as described above, it has the effect of stabilizing the plasma generation uniformity. However, the conventional electrode 9 can not solve the problem that the ions in the plasma are linearly accelerated by the electric field, and the ions are excessively bombarded into the film-forming substrate, so that the film deposited on the substrate is excessively bent, so that the quality of the film after deposition is obtained. Worry.

In addition, when the conventional electrode 9 is applied to any of the above-mentioned plasma generating devices, it is necessary to simultaneously mix a gas dispersing plate to allow the film to be deposited from the gas dispersing plate after the electrode 9 is plasma-generated. The gas can uniformly disperse the gas in the electric field generated by the electrode 9, and complete the collision of the free electrons to cause ionization of the gas to deposit the film.

In this way, it is not only necessary to add the cost and time to install the gas dispersion plate, but also more limited to the space required for the gas dispersion plate to be disposed, so that the conventional electrode 9 can only be applied to a large plasma generation device, and the relative reduction is relatively low. The applicability of the electrode 9 is known. Even when the conventional electrode 9 is used in a small plasma generating device, although the gas to be deposited may pass between the electrode sheets 91 via the number of perturbation slots 92, the perturbation slot 92 is always disposed on the side. The characteristics, but can not completely achieve the effect of uniform gas dispersion, it is more likely to cause incomplete gas ionization, and seriously affect the quality of film formation.

In view of this, it is indeed necessary to develop a gas guiding electrode plate in which a gas is directly passed through and dispersed in an electric field, and at the same time, the gas guiding electrode plate has a uniform distribution of electric potential to solve various problems as described above.

SUMMARY OF THE INVENTION The main object of the present invention is to improve the above object to provide a gas guiding electrode plate capable of uniformly distributing a gas between electrodes while maintaining potential uniformity on the electrode to ensure plasma uniformity and to enhance deposited film. The rate of success.

The second object of the present invention is to provide a gas guiding electrode plate which can effectively reduce the phenomenon of excessive ion bombardment in the plasma to stabilize the film folding degree after deposition, and to produce a high quality film.

In order to achieve the above object, the gas guiding electrode plate of the present invention comprises: a conducting material having a guiding portion, the conducting material forming a first surface and a second surface; and a plurality of micropores running through The conductive material, the long-side center line of the conductive material is a reference line, the number of micro-holes is symmetrically distributed according to the reference line, and the distribution of the number of micro-holes in the conductive material conforms to the following relationship: 0.35≧A _o /A≧0.045, wherein A _o is the sum of the gas permeable areas of the number of micropores on the first surface or the second surface, and A is the area of the conductive material.

Wherein the number of pores are both circular line, the diameter and having the same width, the line width of each pore diameter of 0.5 to 1 mm, the total number of pores of the gas permeable area of lines A _o (R × π × ψ ² )/4, where R is the number of micropores and ψ is the diameter of the micropores.

The conductive material of the present invention may further be provided with a protective layer on the first surface and the second surface, and the plurality of micropores penetrate through the protective layers, and the protective layers are used to resist corrosive gases. The protective layer is selected from the group consisting of ruthenium oxide, an oxide of a rare earth element, or a polyimide resin.

The plurality of micropores may be in a radial, concentric or matrix distribution.

Wherein, the conductive material is selected from the group consisting of aluminum, aluminum alloy, stainless steel, oxygen-free copper, coated aluminum, tantalum, quartz, tantalum carbide, tantalum nitride, sapphire, polyimine or Teflon. Moreover, the shape of the conductive material is square, circular, hexagonal or polygonal.

The above and other objects, features and advantages of the present invention will become more <RTIgt; It is a preferred embodiment of the present invention, and The gas guiding electrode plate comprises a conductive material 1 and a plurality of micropores 2, and the micropores 2 penetrate the conductive material 1. Thereby, the internal structure of the conductive material 1 can be changed by the number of micropores 2 to avoid the standing wave effect on the conductive material 1 due to the high frequency input, and it will be described in detail below with reference to FIGS. 2 to 4.

The conductive material 1 can be selected from aluminum, aluminum alloy, stainless steel, oxygen-free copper, coated aluminum, tantalum, quartz, tantalum carbide, tantalum nitride, sapphire, polythenimine or Teflon. Material to form a planar plate such as a square, circle, hexagon or polygon.

Referring to FIG. 2 again, the conductive material 1 has a guiding portion 11 which is disposed on the peripheral wall of the conductive material 1 for connecting a radio frequency (RF), and The guiding portion 11 can be selected from a single side or a surrounding shape to stabilize the supply of radio frequency current to the conductive material 1 as a main principle, which can be easily understood by those skilled in the art. The guiding portion 11 (shown in detail in Fig. 2) disposed around the peripheral wall of the conductive material 1 is a preferred embodiment of the present invention.

In particular, referring to FIG. 3, the conductive material 1 forms a first surface 12 (ie, the upper surface as shown in FIG. 3) and a second surface 13 (ie, as shown in FIG. 3). The lower surface of the first surface 12 and the second surface 13 are provided with a protective layer 14 for resisting corrosive gases to prevent gas from contacting the electrode surface for a long time, and reducing the electrode due to gas corrosion. Service life. Here, the protective layer 14 may be selected from a film such as coating or the like, and is preferably selected from a corrosion-resistant material such as cerium oxide, an oxide of a rare earth element, or a polyimide resin.

Referring to the second and third figures, the number of micropores 2 penetrates through the conductive material 1, and is particularly formed by the first surface 12 of the conductive material 1 and penetrates through the second surface 13 of the conductive material 1, in particular When the first surface 12 and the second surface 13 are provided with the protective layer 14, it is a preferred principle to simultaneously penetrate the protective layer 14 for gas to pass through the micropores 2. The distribution of the number of micropores 2 in the conductive material 1 , in particular, the gas permeable area formed by the micropores 2 on the first surface 12 or the second surface 13 (ie, the number of micropores 2 on the first surface 12 ) The sum of the areas of the openings formed corresponds to the area of the first surface 12 of the conductive material 1, or the sum of the areas of the openings formed by the number of micro holes 2 on the second surface, and the area of the second surface 13 of the conductive material 1. Corresponding relationship], the following relationship is satisfied: 0.35≧A _o /A≧0.045, where A _o is the sum of the gas permeable areas of the number of micropores 2, and A is the area of the conductive material 1 , especially the conduction The area of the first surface 12 or the second surface 13 of the material 1. For example, the number of micropores 2 system are all circular and have the same radial dimension of [Psi], the number of micropores 2 in a first breathable surface area formed by the sum of A 12 or the second surface 13 _o is the R × π×ψ ² /4, where R is the number of the micropores 2, so that the micropore 2 design with different diameters and widths is provided, and the preferred number of micropores R is used for the area A of the conductive material 1 A preferred number of microporous 2 distributions are presented.

It should be noted that the number of micropores 2 can be a symmetric or asymmetric distribution pattern (ie, the long-side center line of the conductive material 1 shown in FIGS. 4a-4c is a reference line L, so that the number of micro-holes 2 is symmetrical or asymmetrical according to the reference line L, and is evenly distributed on the first surface 12 and the second surface 13 of the conductive material 1, and penetrates through the conductive material 1, in particular, can be irradiated The distribution of the shape, concentric circle or matrix type (see the figures 4a to 4c for details), and the relationship between the above-mentioned 0.35≧A _o /A≧0.045 is the main principle, and not only the type is restricted. In the case of the circular micropores 2, the diameter ψ of each of the micropores 2 can be selected to be 0.5 to 1 mm, and each of the micropores 2 forms a path for the circulation of the process gas, which can be in the process chamber. A preferred uniform flow field is provided. Further, after the conductive material 1 is connected to an RF current, a uniform potential field can be formed thereon to form a uniform plasma field.

For example, in this embodiment, a rectangular aluminum plate having a length of 425 millimeters (mm) and a width of 425 mm is used as the conductive material 1, and a plurality of micropores having a diameter of 1 mm are selected on the first surface 12 of the conductive material 1. 2, the ratio of the sum of the gas permeable areas of the number of micropores 2 to the area of the first surface 12 of the conductive material 1 is 0.12, and the number of micropores 2 can be evenly distributed in a matrix form on the conductive material 1 A surface 12 extends through the second surface 13 of the conductive material 1 to complete the design of the gas guiding electrode plate of the present invention. As shown in FIG. 6, the micropores 2 have a diameter of 1 mm on the first surface 12, and the ratio of the sum of the gas permeable areas of the micropores 2 to the area of the first surface 12 of the conductive material 1 is At 0.12, the obtained potential field distribution is simulated and analyzed.

The gas guiding electrode plate of the invention can be preferably applied to atmospheric pressure chemical vapor deposition (APCVD), low pressure chemical vapor deposition (LPCVD), high density plasma chemical vapor deposition (HDPCVD), electric auxiliary chemical vapor deposition. [PECVD], inductively coupled plasma ion etching (ICP) and other systems to control the plasma generation density and uniformity of various chemical vapor deposition systems or plasma etching systems during operation.

Referring to FIG. 5, the plasma-assisted chemical vapor deposition apparatus is selected as an example, and the gas guiding electrode plate of the present invention is installed in a chamber 31 of a plasma box 3 to serve as the plasma auxiliary. The upper electrode of the chemical vapor deposition device (that is, the electrode plate P1 above the surface of FIG. 5), and the lower electrode is further provided with a lower electrode (ie, the electrode plate P2 below the surface of FIG. 5). The upper and lower electrodes are respectively connected to an RF current supply R to output a radio frequency current to the upper and lower electrodes, and a preferred operating frequency for controlling the RF current is 1 kHz to 100 MHz.

In this way, when the RF current flows through the upper electrode, the number of micropores 2 that are evenly distributed by the upper electrode is designed to block the possibility of the standing wave effect caused by the electromagnetic wave propulsion, so that a reaction chamber can be generated between the upper and lower electrodes. A uniform electric field is required to have a uniform potential distribution between the upper and lower electrodes, and a plasma generating gas (for example, argon, nitrogen, hydrogen, etc.) is introduced into the chamber 31 to transmit the electric field. When the electrons present in the plasma strike the plasma generating gas, the system can completely destroy the bonding between the plasma generating gas atoms or molecules and rapidly generate a dissociation effect to generate a uniform distribution density between the upper and lower electrodes. Plasma gas. Next, when a film forming gas (for example, decane, acetane, propane, etc.) is introduced into the chamber 31 from an air inlet 32, the film is directly formed through the micropores 2 of the upper electrode. The gas is introduced into the chamber 31, and can be evenly dispersed between the upper and lower electrodes, and the film forming gas is bombarded by free electrons uniformly dispersed in the plasma, thereby gradually ionizing the film forming gas. The surface of the film formation substrate 33 forms a film deposition operation.

In summary, the main feature of the gas guiding electrode plate of the present invention is that the internal structure of the conductive material 1 can be changed by using the number of micropores 2 dispersed and penetrating through the conductive material 1, and the high frequency current passes through the When the conductive material 1 is used, not only the potential of the plasma sheath can be lowered, but also the phenomenon that the ions in the plasma are linearly accelerated by the electric field, and the ions are excessively bombarded with the film-forming substrate, so that the film is bent on the substrate. Maintained in a better range; even, it can avoid the production of short-wave electromagnetic waves due to high-frequency current output. The standing wave effect of the raw material reduces the fluctuation or variation of the electric field caused by the electrodes, relatively increases the voltage and potential distribution between the electrodes, and uniformizes the plasma generation during the stable operation process, thereby maintaining the uniformity of the film thickness and improving Membrane quality and efficiency.

In addition, when the film forming gas is subsequently introduced, the film forming gas can be directly dispersed between the electrodes through the micropores 2, and the gas dispersing plate is not required to be added at a cost and time. It is limited by the space required for the gas dispersing plate setting, and can effectively improve the applicability of the present invention; even, the design of the micropores 2 can completely achieve the effect of uniform dispersion of the film forming gas, and free electrons in the plasma. Under the bombardment, the effect of comprehensive ionized film forming gas is achieved, and a higher quality film is produced.

The gas guiding electrode plate of the invention can uniformly distribute the gas between the electrodes, and at the same time maintain the potential uniformity on the electrode to ensure the uniformity of plasma generation and achieve the effect of improving the yield of the deposited film.

The gas guiding electrode plate of the invention can effectively reduce the phenomenon of excessive ion bombardment in the plasma, so as to stabilize the film bending degree after deposition, and achieve the effect of producing a high quality film.

While the invention has been described in connection with the preferred embodiments described above, it is not intended to limit the scope of the invention. The technical scope of the invention is protected, and therefore the scope of the invention is defined by the scope of the appended claims.

〔this invention〕

1‧‧‧Connecting materials

11‧‧‧Guidance

12‧‧‧ first surface

13‧‧‧ second surface

14‧‧‧Protective layer

2‧‧‧Micropores

3‧‧‧The plasma box

31‧‧‧ chamber

32‧‧‧air inlet

P1, P2‧‧‧ upper electrode plate

R‧‧‧RF current supply

L‧‧‧ baseline

[study]

9‧‧‧Electrode

91‧‧‧electrode

92‧‧‧Missing slot

Figure 1: A schematic view of a conventional electrode plate.

Fig. 2 is a perspective view showing the gas guiding electrode plate of the present invention.

Fig. 3 is a schematic cross-sectional view showing a gas guiding electrode plate of the present invention.

4a-4c: a distribution diagram of different micropores of the gas guiding electrode plate of the present invention.

Fig. 5 is a schematic view showing the application of the gas guiding electrode plate of the present invention.

Figure 6: Simulation analysis of the potential field distribution of the gas guiding electrode plate of the present invention.

1. . . Conductive material

11. . . Guide

12. . . First surface

13. . . Second surface

14. . . The protective layer

2. . . Microporous

Claims (6)

A conductive gas electrode plate comprising: a conductive material having a guiding portion, the conductive material forming a first surface and a second surface; and a plurality of micropores extending through the conductive material, the conductive material The long-side center line is a reference line, and the number of micro-holes is symmetrically distributed according to the reference line, and the distribution of the number of micro-holes in the conductive material conforms to the following relationship: 0.35≧A _o /A≧0.045 Wherein, A _o is the sum of the gas permeable areas of the plurality of micropores on the first surface or the second surface, and A is the area of the conductive material; wherein the plurality of micropores are round holes and have the same lane widths, each of the radial dimension of the microporous system is from 0.5 to 1 mm, the number of air-permeable microporous system is sum of the areas A _o ^{(R × π × ψ 2)} / 4, where R is the number of the number of micropores, ψ is the diameter of the number of micropores. The gas guide electrode plate according to the first aspect of the invention, wherein the first surface and the second surface are provided with a protective layer, and the plurality of micropores penetrate through the protective layers, and the protective layers are used To resist corrosive gases. The gas-conducting electrode plate according to the second aspect of the invention, wherein the protective layer is selected from the group consisting of a film of cerium oxide, an oxide of a rare earth element or a polyimide resin. The gas guiding electrode plate according to claim 1 or 2, wherein the plurality of micropores are in a radial, concentric or matrix distribution. The gas guiding electrode plate according to claim 1, wherein the conducting material is selected from the group consisting of aluminum, aluminum alloy, stainless steel, oxygen-free copper, coated aluminum, tantalum, One of quartz, tantalum carbide, tantalum nitride, sapphire, polythenimine or Teflon. The gas guiding electrode plate according to claim 1 or 2, wherein the guiding portion is disposed on a peripheral wall of the conductive material for connecting an RF current.