TWI524594B - Miniaturized planar multi - frequency antenna - Google Patents
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Description
本發明係有關一種行動無線寬頻天線結構,特別是指一種可操作於WWAN之五頻規範頻帶及涵蓋到低頻LTE 700頻帶,甚至進一步包含到高頻LTE 2300與LTE 2500之六頻規範頻帶到八頻規範頻帶之小型化平面天線。The invention relates to a mobile wireless broadband antenna structure, in particular to a five-frequency specification frequency band operable on a WWAN and covering a low frequency LTE 700 frequency band, and even further comprising a high frequency LTE 2300 and LTE 2500 six frequency specification frequency band to eight A miniaturized planar antenna with a frequency band.
按,為迎接高科技時代的來臨,行動辦公室的理念已成為現今與未來的趨勢,個人行動通訊儼然成為最重要的一環。各式各樣的行動通訊產品為求多功能性與方便性,不斷推陳出新,舉凡手機、平板電腦與筆記型電腦等產品,都逐漸成為人手一機、不可或缺的隨身物品。同時隨著行動通訊產品功能的突破進化,其密不可分的行動通訊系統也相應地發展出來。In order to meet the advent of the high-tech era, the concept of the Office of Action has become the trend of the present and the future, and personal mobile communication has become the most important part. A variety of mobile communication products for versatility and convenience, continue to innovate, such as mobile phones, tablets and notebook computers, etc., have gradually become a handy, indispensable personal belongings. At the same time, with the breakthrough of the function of mobile communication products, its inseparable mobile communication system has also developed accordingly.
行動通訊系統的演進可區分為第一代(1G)、第二代(2G)、第三代(3G)與未來的第四代(4G)行動通訊系統等;其中,第三代行動通訊系統所涵蓋之五個頻帶綜合而成之低頻與高頻應用頻帶的中心頻率與頻寬分別為892 MHz(15.2%)與1940 MHz(23.7%)。具備3G行動通訊系統功能之設備,將可建構一個無線廣域網路(Wireless Wide Area Network,WWAN),如此即可透過此裝置隨時隨地無線上網。The evolution of mobile communication systems can be divided into first generation (1G), second generation (2G), third generation (3G) and future fourth generation (4G) mobile communication systems; among them, third generation mobile communication system The center frequency and bandwidth of the low frequency and high frequency application bands combined by the five bands covered are 892 MHz (15.2%) and 1940 MHz (23.7%), respectively. A device with 3G mobile communication system function will be able to construct a Wireless Wide Area Network (WWAN), so that it can wirelessly access the Internet anytime, anywhere.
然而,現今諸如高速鐵路快速移動之交通工具等生活上普遍使用到的設施,以既有之3G系統常會發生收訊不良或斷訊等困擾,因此能滿足更多元化生活需求的4G系統在未來將是大家所引頸期盼的。However, today's facilities such as high-speed railways and fast-moving vehicles, which are commonly used in life, often suffer from poor reception or disconnection in existing 3G systems, so 4G systems that can meet more diverse living needs are The future will be what everyone is looking forward to.
第四代行動通訊系統(4G)未來將發展一個除了包含既有的第三代行動通訊系統的五個頻帶外,再加入長期演進技術(Long Term Evolution,LTE)的三個規範頻帶;分別為美規LTE 700(698~787 MHz)、中國LTE 2300(2300~2395 MHz)、歐規LTE 2500(2500~2690 MHz)等八個規範頻帶所綜合而成之698~960 MHz與1710~2690 MHz等兩個應用頻帶,其中心頻率與百分比頻寬分別為829 MHz(31.6%)與2200 MHz(44.5%)。The fourth-generation mobile communication system (4G) will develop a three-band band of Long Term Evolution (LTE) in addition to the five bands containing the existing third-generation mobile communication system; 698~960 MHz and 1710~2690 MHz combined with eight standard bands such as LTE 700 (698~787 MHz), China LTE 2300 (2300~2395 MHz), and European LTE 2500 (2500~2690 MHz) The two application frequency bands have a center frequency and a percentage bandwidth of 829 MHz (31.6%) and 2200 MHz (44.5%), respectively.
邁入4G時代的通訊系統的資料傳輸率將可達到目前3G網路的數十倍,甚至可以達到上傳速度50 Mbps與下傳速度100 Mbps以上,並且更具備因應移動的能力,可適用於現今高速交通工具,以保持通訊品質不中斷。此外,在4G行動通訊系統中,不但降低了設置基地臺的成本,直接架構於GSM手機系統上,只要將既有的3G/3.5G基地臺升級成為4G基地臺,在任何有手機基地臺訊號的地方都可以接收到高速的網路訊號,極適合於未來資訊產業講求如何以最低成本去追求一個高資料傳輸率與多功能服務功能的趨勢,因此將革除3G的瓶頸而邁入一個4G的時代。The data transmission rate of the communication system entering the 4G era will reach dozens of times of the current 3G network, and even reach the upload speed of 50 Mbps and the downlink transmission speed of 100 Mbps or more, and it has the ability to respond to the movement, and can be applied to the present day. High-speed vehicles to maintain communication quality without interruption. In addition, in the 4G mobile communication system, not only reduces the cost of setting up the base station, but also directly constructs the GSM mobile phone system, as long as the existing 3G/3.5G base station is upgraded to a 4G base station, and any mobile phone base station signal All places can receive high-speed network signals, which is very suitable for the future information industry to pursue the trend of pursuing a high data transmission rate and multi-function service function at the lowest cost. Therefore, it will remove the bottleneck of 3G and enter a 4G era.
由於不同國家使用相異的行動通訊系統與操作頻帶,這對於需輾轉世界各地的人們將會造成不必要的困擾,因此有必要整合各種系統均可使用的行動通訊裝置。這些行動通訊裝置中,最炙手可熱的非手機與筆記型電腦莫屬。兩者相較,手機雖然已大量應用於通訊、收發訊息、網路資訊等功能,筆記型電腦則不但囊括了手機通訊的功能,更具有處理工作報表與資料等功能。對於一位外地出差的上班族或是各地旅遊的達人,筆記型電腦除了可掌握到最新的訊息外,也可提供工作所需的即時文書處理功能。Since different countries use different mobile communication systems and operating frequency bands, which will cause unnecessary problems for people around the world, it is necessary to integrate mobile communication devices that can be used in various systems. Among the mobile communication devices, the most popular non-mobile phones and notebooks are the only ones. Compared with the two, although the mobile phone has been widely used in communication, sending and receiving messages, network information and other functions, the notebook computer not only includes the function of mobile communication, but also has the functions of processing work reports and data. For an office worker who is on a business trip or a traveler from all over the world, the notebook computer can provide the instant document processing functions required for the job in addition to the latest information.
隨著上述這些行動通訊裝置不斷在功能性、方便性、外觀輕巧化且便利攜帶性等方面推陳出新,它們所用的天線也由外露式發展為內藏式,且對尺寸縮小化與薄形化的要求也越來越嚴苛,因此日後如何在日趨要求近乎無厚度的有限空間內,避免遭受週邊裝置的影響而劣化天線的性能,滿足具有更高傳輸率的第四代行動通訊(4G)系統的操作頻寬,將會是未來的天線設計必須面對的一大挑戰。故,如何設計出應用於筆記型電腦上且滿足未來4G應用的小型平面式多頻帶天線已為業界及學術界極力研發的主軸。As these mobile communication devices continue to evolve in terms of functionality, convenience, lightness in appearance, and portability, the antennas used are also developed from the exposed type to the built-in type, and the size is reduced and thinned. The requirements are becoming more and more demanding, so in the future, how to avoid the influence of peripheral devices and degrade the performance of the antenna in the limited space with almost no thickness, and meet the fourth generation mobile communication (4G) system with higher transmission rate. The operating bandwidth will be a major challenge for future antenna designs. Therefore, how to design a small planar multi-band antenna for notebook computers and to meet future 4G applications has been developed by the industry and academia.
有鑑於此,本發明即在提供一種可操作於WWAN之五頻規範頻帶及涵蓋到低頻LTE 700頻帶,甚至進一步包含到高頻LTE 2300與LTE 2500之六頻規範頻帶到八頻規範頻帶之小型化平面天線,為其主要目的者。In view of this, the present invention provides a small frequency band that can operate in the WWAN and covers the low frequency LTE 700 band, and even further includes a small frequency band of the HF LTE 2300 and LTE 2500 to the octave band. The planar antenna is the main target.
為達上揭目的,本發明之小型化平面多頻天線係包括有:一基材、一饋入金屬微帶、一切斷式迴圈金屬微帶、一共振金屬微帶、一馬刺形金屬微帶,以及延伸金屬帶結構;其中,該基材係為概呈長條狀之介質基材。該饋入金屬微帶係設於該基材上,其依序形成有一概自基材前緣中段處朝基材內側方向延伸預定長度之第一起始區段、及一轉而朝基材右側方向延伸至基材邊緣之第一伸展區段。該切斷式迴圈金屬微帶係設於該基材上,其依序形成有一概與饋入金屬微帶第一伸展區段平行之第二起始區段、一轉而自基材右側邊緣延伸至基材後緣之第一接續區段、一沿著基材後緣延伸至基材左側邊緣之主區段、及一沿著基材左側邊緣延伸至基材前緣之第二伸展區段。該共振金屬微帶係設於該基材上,其依序形成有一概自該饋入金屬微帶之第一起始區段處朝饋入金屬微帶第一伸展區段相反走向延伸預定長度之第三起始區段、一轉而朝向基材內側延伸預定長度之第二接續區段、及一轉朝向起始點的方向延伸預定長度並概與第三起始區段平行之第三伸展區段。該馬刺形金屬微帶設於該基材上,其依序形成有一概自該共振金屬微帶第三伸展區段中段處朝基材前緣延伸預定長度之第四起始區段、及一轉朝基材右側延伸預定長度之第四伸展區段;以及該馬刺形金屬微帶在其第四伸展區段近中段處形成一寬度增加之階級,該階級係延伸至第四伸展區段尾端成為一延伸金屬帶結構。In order to achieve the above, the miniaturized planar multi-frequency antenna system of the present invention comprises: a substrate, a feed metal microstrip, a cut-off metal microstrip, a resonant metal microstrip, and a spur-shaped metal micro A tape, and an extended metal strip structure; wherein the substrate is a substantially elongated dielectric substrate. The feeding metal microstrip is disposed on the substrate, and sequentially forms a first starting section extending from a middle portion of the leading edge of the substrate toward the inner side of the substrate by a predetermined length, and a turn toward the right side of the substrate The direction extends to the first stretched section of the edge of the substrate. The cut-off loop metal microstrip is disposed on the substrate, and is sequentially formed with a second starting section parallel to the first extended section of the feeding metal microstrip, and one turn from the right side of the substrate The edge extends to a first continuous section of the trailing edge of the substrate, a main section extending along the trailing edge of the substrate to the left edge of the substrate, and a second stretch extending along the left edge of the substrate to the leading edge of the substrate Section. The resonant metal microstrip is disposed on the substrate, and is sequentially formed to extend from the first starting portion of the feeding metal microstrip to the opposite direction of the first extended portion of the feeding metal microstrip. a third starting section, a second successive section extending a predetermined length toward the inner side of the substrate, and a third extension extending in a direction toward the starting point by a predetermined length and parallel to the third starting section Section. The spur-shaped metal microstrip is disposed on the substrate, and sequentially forms a fourth starting segment extending from the middle portion of the third stretched portion of the resonant metal microstrip toward the front edge of the substrate by a predetermined length, and a Transducing a fourth extended section of a predetermined length toward the right side of the substrate; and the horse-shaped metal microstrip forms an increased width class at a near mid-section of the fourth extended section, the class extending to the end of the fourth stretched section The end becomes an extended metal strip structure.
本發明之小型化平面多頻天線即以該饋入金屬微帶之第一起始區段前端為饋入點,另以切斷式迴圈金屬微帶之第二伸展區段末端為接地點,透過饋入金屬微帶與切斷式迴圈金屬微帶之區隔將切斷式迴圈金屬微帶之原始直接饋入結構改為耦合式饋入結構,以激發低頻共振模態,且設計一組雙耦合式饋入結構來激發四個共振模態。The miniaturized planar multi-frequency antenna of the present invention uses the front end of the first starting section of the feeding metal microstrip as a feeding point, and the end of the second extended section of the cut-off metal microstrip as a grounding point. The original direct feed structure of the cut-off metal microstrip is changed into a coupled feed structure by the feeding of the metal microstrip and the cut-off metal microstrip to excite the low-frequency resonant mode, and the design A set of dual coupled feed structures are used to excite four resonant modes.
並藉由該馬刺形金屬微帶,可增加800 MHz~965 MHz低頻帶之電感性阻抗,使675~965 MHz達成VSWR<3的阻抗匹配。同時,不但使高頻第二模態(共振在2540 MHz)移向2150 MHz且改善附近激烈變化的阻抗曲線,而產生了雙共振現象,使得1670~2900 MHz皆能達成VSWR<3的阻抗匹配,如此使本發明之小型化平面多頻天線可涵蓋到LTE 700/GSM 850/GSM 900/GSM 1800/GSM 1900/UMTS/LTE 2300/LTE 2500等八個規範頻帶。And with the Spur-shaped metal microstrip, the inductive impedance of the low frequency band from 800 MHz to 965 MHz can be increased, and the impedance matching of VSWR<3 is achieved at 675~965 MHz. At the same time, not only does the high-frequency second mode (resonance at 2540 MHz) move to 2150 MHz and improves the impedance curve that changes drastically in the vicinity, but also produces a double resonance phenomenon, which enables impedance matching of VSWR<3 at 1670~2900 MHz. Thus, the miniaturized planar multi-frequency antenna of the present invention can cover eight specification bands such as LTE 700/GSM 850/GSM 900/GSM 1800/GSM 1900/UMTS/LTE 2300/LTE 2500.
具體而言,本發明利用上述設計可獲致一種尤適合應用於4G八頻平面式筆記型電腦之小型化平面多頻天線,此一小型化平面多頻天線僅用55×8 mm2的平面尺寸即可得到在VSWR≦3標準下包含675~965 MHz與1670~2900 MHz的阻抗頻帶範圍。這個操作頻帶範圍可涵蓋LTE 700/GSM 850/GSM 900/GSM 1800/GSM 1900/UMTS/LTE 2300/LTE 2500等八個規範頻帶。In particular, the present invention utilizes the above design to achieve a miniaturized planar multi-frequency antenna that is particularly suitable for use in a 4G eight-band planar notebook computer. This miniaturized planar multi-frequency antenna uses only a planar size of 55 x 8 mm 2 . The impedance band range of 675~965 MHz and 1670~2900 MHz is available under the VSWR≦3 standard. This operating band range can cover eight specification bands such as LTE 700/GSM 850/GSM 900/GSM 1800/GSM 1900/UMTS/LTE 2300/LTE 2500.
本發明之特點,可參閱本案圖式及實施例之詳細說明而獲得清楚地瞭解。The features of the present invention can be clearly understood by referring to the drawings and the detailed description of the embodiments.
本發明主要提供一種可操作於WWAN之五頻規範頻帶及涵蓋到低頻LTE 700頻帶,甚至進一步包含到高頻LTE 2300與LTE 2500之六頻規範頻帶到八頻規範頻帶之小型化平面天線。如第一圖本發明中小型化平面天線之結構立體圖所示,本創作之小型化平面天線基本上包括有:一基材10、一饋入金屬微帶20、一切斷式迴圈金屬微帶30,以及一共振金屬微帶40;其中:該基材10係為概呈長條狀之介質基材,於實施時,該基材10係可架設於一接地金屬面60上;該基材10係可以為一外形尺寸為55 mm×8 mm×0.4 mm之FR4介質基板;至於,該接地金屬面60係可為一外形尺寸為260mm×200 mm×0.2 mm之銅板;以及,整體天線之饋入訊號係可以利用一沿著接地金屬面60邊緣佈線的導線70連接。The present invention mainly provides a miniaturized planar antenna that can operate in a five-frequency specification band of a WWAN and that covers a low-frequency LTE 700 band, and even further includes a six-frequency specification band to an eight-frequency specification band of the high-frequency LTE 2300 and LTE 2500. As shown in the first perspective view of the structure of the miniaturized planar antenna of the present invention, the miniaturized planar antenna of the present invention basically comprises: a substrate 10, a feed metal microstrip 20, and a cut-off loop metal microstrip. 30, and a resonant metal microstrip 40; wherein: the substrate 10 is a substantially elongated dielectric substrate, in practice, the substrate 10 can be erected on a grounded metal surface 60; The 10 series may be an FR4 dielectric substrate having an outer dimension of 55 mm × 8 mm × 0.4 mm; thus, the grounded metal surface 60 may be a copper plate having an outer dimension of 260 mm × 200 mm × 0.2 mm; and, the overall antenna The feed signal can be connected by a wire 70 routed along the edge of the grounded metal surface 60.
該饋入金屬微帶20係設於該基材10上,其依序形成有一概自基材10前緣中段處朝基材10內側方向延伸預定長度之第一起始區段21(A點~B點)、及一轉而朝基材10右側方向延伸至基材10邊緣之第一伸展區段22(B點~C點)。The feeding metal microstrip 20 is disposed on the substrate 10, and is sequentially formed with a first starting portion 21 extending from a middle portion of the leading edge of the substrate 10 toward the inner side of the substrate 10 by a predetermined length (point A~ Point B), and a first stretched section 22 (point B to point C) extending toward the right side of the substrate 10 in the right direction of the substrate 10.
該切斷式迴圈金屬微帶30係設於該基材10上,其依序形成有一概與饋入金屬微帶20第一伸展區段22平行之第二起始區段31(D點~E點)、一轉而自基材10右側邊緣延伸至基材10後緣之第一接續區段32(E點~F點)、一沿著基材10後緣延伸至基材10左側邊緣之主區段33(F點~G點)、及一沿著基材10左側邊緣延伸至基材10前緣之第二伸展區段34(G點~H點)。The cut-off loop metal microstrip 30 is disposed on the substrate 10, and is sequentially formed with a second starting section 31 (D point) substantially parallel to the first extended section 22 of the feeding metal microstrip 20. ~E point), one turn from the right edge of the substrate 10 to the first continuous section 32 (point E to point F) of the trailing edge of the substrate 10, one along the trailing edge of the substrate 10 to the left side of the substrate 10 The main section 33 of the edge (point F to point G) and a second stretched section 34 (point G to point H) extending along the left edge of the substrate 10 to the leading edge of the substrate 10.
該共振金屬微帶40係設於該基材10上,其依序形成有一概自該饋入金屬微帶20之第一起始區段21處朝饋入金屬微帶20第一伸展區段22相反走向延伸預定長度之第三起始區段41(A點~I點)、一轉而朝向基材10內側延伸預定長度之第二接續區段42(I點~J點)、及一轉朝向起始點的方向延伸預定長度並概與第三起始區段41平行之第三伸展區段43(J點~K點)。The resonant metal microstrip 40 is disposed on the substrate 10, and is sequentially formed from the first starting section 21 of the feeding metal microstrip 20 toward the first extended section 22 of the feeding metal microstrip 20. Conversely, a third starting section 41 (point A to point I) extending a predetermined length, a second connecting section 42 (point I to point J) extending a predetermined length toward the inner side of the substrate 10, and one turn The third extended section 43 (J point - K point) extending a predetermined length toward the starting point and being substantially parallel to the third starting section 41.
進一步包括有一馬刺形金屬微帶50,該馬刺形金屬微帶50係設於該基材10上,其依序形成有一概自該共振金屬微帶40第三伸展區段43中段處朝基材10前緣延伸預定長度之第四起始區段51(L點~M點)、及一轉朝基材10右側延伸預定長度之第四伸展區段52(M點~N點),並在其第四伸展區段52近中段處形成一寬度增加之階級,該階級係延伸至第四伸展區段52尾端成為一延伸金屬帶結構53(N點~O點);該延伸金屬帶結構53所增加的寬度係為馬刺形金屬微帶50寬度的三分之五倍為佳。Further comprising a spur-shaped metal microstrip 50, the spur-shaped metal microstrip 50 is disposed on the substrate 10, and sequentially formed from the middle portion of the third stretched section 43 of the resonant metal microstrip 40 toward the substrate 10 leading edge extending a predetermined length of the fourth starting section 51 (L point ~ M point), and a fourth extending section 52 (M point ~ N point) extending a predetermined length toward the right side of the substrate 10, and A section of increasing width is formed at a proximal portion of the fourth extended section 52, and the step extends to the end of the fourth extended section 52 to form an extended metal strip structure 53 (N point ~ O point); the extended metal strip structure The increased width of 53 is preferably five-fifths the width of the Spur-shaped metal microstrip 50.
原則上,本發明之小型化平面多頻天線即以該饋入金屬微帶20之第一起始區段21前端為饋入點(A點),另以切斷式迴圈金屬微帶30之第二伸展區段34末端為接地點(H點),透過饋入金屬微帶20與切斷式迴圈金屬微帶30之區隔將切斷式迴圈金屬微帶30之原始直接饋入結構改為耦合式饋入結構,以激發低頻共振模態,且設計一組雙耦合式饋入結構來激發四個共振模態,藉此來形成兩個寬的阻抗頻帶以涵蓋4G應用之八個規範頻帶。In principle, the miniaturized planar multi-frequency antenna of the present invention adopts the front end of the first starting section 21 of the feeding metal microstrip 20 as a feeding point (point A), and the cut-off loop metal microstrip 30 The end of the second extension section 34 is a ground point (H point), and the original of the cut-off loop metal microstrip 30 is directly fed through the division of the feed metal microstrip 20 and the cut-off loop metal microstrip 30 The structure is changed to a coupled feed structure to excite low frequency resonant modes, and a set of dual coupled feed structures are designed to excite four resonant modes, thereby forming two wide impedance bands to cover the eight of the 4G applications. Specification band.
而本發明小型化平面式多頻天線的發展過程,如第二圖(A)~(D)所示,首先以一個饋入金屬微帶20為起始結構。如第二圖(A)所示,該饋入金屬微帶20的印製路徑為A-B-C-F-G-H段,線寬為1 mm且總長度為96 mm;其中A點為饋入點,H點為接地點。饋入金屬微帶20可在較高頻的規範頻帶範圍內(1710~2690 MHz)激發二個模態(分別稱為高頻帶第一與第二模態)。The development process of the miniaturized planar multi-frequency antenna of the present invention, as shown in the second diagrams (A) to (D), begins with a feed metal microstrip 20 as a starting structure. As shown in the second figure (A), the printed path of the feeding metal microstrip 20 is ABCFGH segment, the line width is 1 mm and the total length is 96 mm; wherein point A is the feeding point and point H is the grounding point. . Feeding the metal microstrip 20 excites two modes (referred to as the high frequency first and second modes, respectively) in the higher frequency specification band (1710~2690 MHz).
為在較低頻的規範頻帶範圍內(698~960 MHz)新產生一個共振模態(稱為低頻帶第一模態),發展一個切斷式迴圈金屬微帶30。可如第二圖(B)所示,在饋入金屬微帶20路徑上的適當處斷開,且將饋入金屬微帶20的直接饋入結構設計為一個耦合式饋入結構。路徑斷開處(E點)是在饋入金屬微帶20路徑C-F段上的F點下方3 mm處,且由此向左延伸一段長度後至D點,形成A-B-C段及D-E-F-G-H段兩條分離的金屬微帶。To create a new resonant mode (called the low-band first mode) in the lower frequency specification band (698-960 MHz), a cut-off metal microstrip 30 is developed. As shown in the second diagram (B), it is broken at a suitable place in the path of feeding the metal microstrip 20, and the direct feed structure fed into the metal microstrip 20 is designed as a coupled feed structure. The path break (point E) is 3 mm below the point F fed into the CF segment of the path of the metal microstrip 20, and thus extends to the left for a length and then to point D, forming two separations of the ABC segment and the DEFGH segment. Metal microstrip.
為在較低頻的規範頻帶範圍內再產生一個共振模態(稱為低頻帶第二模態),以便涵蓋所需的698~960 MHz的阻抗頻寬,後續將饋入金屬微帶20延伸發展為一個共振金屬微帶40。該天線如第二圖(C)所示是在該饋入金屬微帶20上的A點向左延伸至I點,再向上及向右分別延伸至J點與K點,形成由標示點B-I-J-K區段組成的倒U形共振金屬微帶40。To generate a resonant mode (referred to as the low-band second mode) in the lower frequency specification band to cover the required impedance bandwidth of 698 to 960 MHz, which will be subsequently fed into the metal microstrip 20 Developed as a resonant metal microstrip 40. As shown in the second figure (C), the antenna extends to the left at point A on the metal microstrip 20, and then extends upward and right to point J and point K, respectively, to form a mark point BIJK. An inverted U-shaped resonant metal microstrip 40 composed of segments.
接著於第二圖(D)所示的L點處延伸出去一條馬刺形金屬微帶50(L-M-N-O線段)。同時,在馬刺形金屬微帶50中之N-O段(N-O段的長度為馬刺形結構長度之一半)朝垂直於M-O線段的方向加寬,使得其中的N-O段的寬度較M-N段寬。藉由上述設計步驟可達成涵蓋兩個寬頻應用頻帶(698~960 MHz與1710~2690 MHz)的平面式天線設計。Next, a spur-shaped metal microstrip 50 (L-M-N-O line segment) is extended at the point L shown in the second figure (D). At the same time, the N-O segment (the length of the N-O segment is one-half of the length of the spur-shaped structure) in the spike-shaped metal microstrip 50 is widened in a direction perpendicular to the M-O segment such that the width of the N-O segment is wider than the M-N segment. The planar antenna design covering two broadband application bands (698~960 MHz and 1710~2690 MHz) can be achieved by the above design steps.
如第三圖係為模擬本發明中小型化平面多頻天線發展過程中的第二圖(C)與第二圖(D)的結構所得之阻抗頻率響應圖:(a)反射損失圖;(b)實部阻抗圖;(c)虛部阻抗圖,由模擬結果可知,由於本發明之小型化平面多頻天線當中所使用之基材10厚度僅具有0.4 mm,且基材10之面積僅為55×8 mm2,因此當天線發展至第二圖(C)的結構時,低頻帶僅能涵蓋670~830 MHz,而高頻帶則僅涵蓋1670~2210 MHz與2530~2770 MHz,無法完全涵蓋高頻應用頻帶(1710 MHz~2690 MHz)。藉由馬刺形金屬微帶50的加入,成為第二圖(D)的結構;也就是本發明之小型化平面多頻天線,可增加第二圖(C)的結構在800 MHz~965 MHz低頻帶之電感性阻抗,因此使675~965 MHz皆能達成VSWR<3的阻抗匹配。同時,本發明之小型化平面多頻天線也將改善第二圖(C)的結構呈激烈變化的阻抗曲線,不但使其移向2150 MHz且將阻抗振幅平緩化,產生了雙共振現象,使得1670~2900 MHz皆能達成VSWR<3的阻抗匹配,如此使本發明之小型化平面多頻天線可涵蓋到LTE 700/GSM 850/GSM 900/GSM 1800/GSM 1900/UMTS/LTE 2300/LTE 2500等八個規範頻帶。The third figure is an impedance frequency response diagram obtained by simulating the structures of the second (C) and second (D) processes in the development of the miniaturized planar multi-frequency antenna of the present invention: (a) a reflection loss map; b) real impedance map; (c) imaginary impedance map, from the simulation results, the substrate 10 used in the miniaturized planar multi-frequency antenna of the present invention has a thickness of only 0.4 mm, and the area of the substrate 10 is only It is 55×8 mm 2 , so when the antenna is developed to the structure of the second figure (C), the low frequency band can only cover 670~830 MHz, while the high frequency band only covers 1670~2210 MHz and 2530~2770 MHz, which cannot be completely Covers the high frequency application band (1710 MHz ~ 2690 MHz). By the addition of the horse-shaped metal microstrip 50, the structure of the second figure (D) is obtained; that is, the miniaturized planar multi-frequency antenna of the present invention can increase the structure of the second figure (C) at a low frequency of 800 MHz to 965 MHz. The inductive impedance of the band makes it possible to achieve impedance matching of VSWR<3 from 675 to 965 MHz. At the same time, the miniaturized planar multi-frequency antenna of the present invention will also improve the impedance curve of the structure of the second figure (C), which not only makes it move to 2150 MHz but also smoothes the impedance amplitude, resulting in a double resonance phenomenon. The impedance matching of VSWR<3 can be achieved from 1670 to 2900 MHz, so that the miniaturized planar multi-frequency antenna of the present invention can cover LTE 700/GSM 850/GSM 900/GSM 1800/GSM 1900/UMTS/LTE 2300/LTE 2500 Wait for eight gauge bands.
另,如第四圖所示,係為本發明之小型化平面多頻天線具有不同長度的50歐姆同軸傳輸導線時,量測與模擬所得之反射損失圖;分別以520 mm與720 mm等不同長度的50歐姆同軸傳輸導線饋入至本發明之小型化平面多頻天線並量測其特性。傳輸線之饋入訊號端連接於饋入點(A點),接地編織網則是焊接於接地點(H點)附近的天線金屬接地面上。此50歐姆同軸傳輸導線將沿著筆記型電腦銀幕背面接地面之上緣往右端方向佈線,且沿著天線金屬接地面的右邊緣至右下角,再連接至網路分析儀之測試端。由第四圖量測與模擬所得之反射損失圖所示,當傳輸導線長度為520 mm或720 mm時,天線反射損失相較於模擬結果(不具50歐姆同軸傳輸導線)而言,傳輸導線長度愈長,損耗愈大,因此阻抗匹配程度愈佳。雖然如此,實測結果與模擬結果皆能涵蓋低頻應用頻帶(698~960 MHz)與高頻應用頻帶(1710~2690 MHz)等八個頻規範頻帶之阻抗匹配。In addition, as shown in the fourth figure, when the miniaturized planar multi-frequency antenna of the present invention has 50 ohm coaxial transmission wires of different lengths, the reflection loss map obtained by measurement and simulation is different from 520 mm and 720 mm, respectively. A 50 ohm coaxial transmission wire of length is fed to the miniaturized planar multi-frequency antenna of the present invention and its characteristics are measured. The feed signal end of the transmission line is connected to the feed point (point A), and the ground woven mesh is soldered to the antenna metal ground plane near the ground point (point H). The 50 ohm coaxial transmission wire will be routed to the right end along the upper edge of the ground plane of the back of the notebook screen, and along the right edge to the lower right corner of the antenna metal ground plane, and then connected to the test end of the network analyzer. As shown in the reflection loss diagram of the fourth graph measurement and simulation, when the transmission wire length is 520 mm or 720 mm, the antenna reflection loss is higher than the simulation result (without 50 ohm coaxial transmission wire). The longer the loss, the better the impedance matching. Nevertheless, both the measured results and the simulation results can cover the impedance matching of the eight frequency specification bands such as the low frequency application band (698~960 MHz) and the high frequency application band (1710~2690 MHz).
在本實施例中,該基材10同樣係可架設於一接地金屬面60上;該基材10係可以為一外形尺寸為55 mm×8 mm×0.4 mm之FR4介質基板;至於,該接地金屬面60係可為一外形尺寸為260mm×200 mm×0.2 mm之銅板;以及,整體天線之饋入訊號係可以利用一沿著接地金屬面60邊緣佈線的導線70連接。In this embodiment, the substrate 10 can also be mounted on a grounded metal surface 60; the substrate 10 can be an FR4 dielectric substrate having an outer dimension of 55 mm × 8 mm × 0.4 mm; The metal surface 60 can be a copper plate having an outer dimension of 260 mm x 200 mm x 0.2 mm; and the feed signal of the integral antenna can be connected by a wire 70 routed along the edge of the grounded metal surface 60.
具體而言,本發明利用上述設計可獲致一種尤適合應用於4G八頻平面式筆記型電腦之小型化平面多頻天線,此一小型化平面多頻天線僅用55×8 mm2的平面尺寸即可得到在VSWR≦3標準下包含675~965 MHz與1670~2900 MHz的阻抗頻帶範圍。這個操作頻帶範圍可涵蓋LTE 700/GSM 850/GSM 900/GSM 1800/GSM 1900/UMTS/LTE 2300/LTE 2500等八個規範頻帶。In particular, the present invention utilizes the above design to achieve a miniaturized planar multi-frequency antenna that is particularly suitable for use in a 4G eight-band planar notebook computer. This miniaturized planar multi-frequency antenna uses only a planar size of 55 x 8 mm 2 . The impedance band range of 675~965 MHz and 1670~2900 MHz is available under the VSWR≦3 standard. This operating band range can cover eight specification bands such as LTE 700/GSM 850/GSM 900/GSM 1800/GSM 1900/UMTS/LTE 2300/LTE 2500.
值得一提的是,上述55×8 mm2的平面尺寸並非為本發明中基材10唯一可行之尺寸限制。在其他同樣可行之平面尺寸條件下,該饋入金屬微帶20之第一伸展區段22與該切斷式迴圈金屬微帶30之第二起始區段31之間隔保持在0.5mm;該切斷式迴圈金屬微帶30之主區段33與該共振金屬微帶40之第三伸展區段43間隔保持在0.5mm;以及,該饋入金屬微帶20之第一起始區段21前端與基材前緣距離保持在0.5mm為佳。It is worth mentioning that the above-mentioned planar size of 55 × 8 mm 2 is not the only possible size limitation of the substrate 10 in the present invention. The gap between the first extended section 22 of the feed metal microstrip 20 and the second starting section 31 of the cut-off loop metal microstrip 30 is maintained at 0.5 mm under other equally feasible planar dimensions; The main section 33 of the cut-off loop metal microstrip 30 is spaced apart from the third extended section 43 of the resonant metal microstrip 40 by 0.5 mm; and the first starting section of the feed metal microstrip 20 It is preferable that the distance between the front end of the 21 and the leading edge of the substrate is maintained at 0.5 mm.
再者,當該基材10之面積為55×8 mm2的平面尺寸時,各金屬微帶之尺寸可以為如下之配置設計:該饋入金屬微帶20之第一起始區段21寬度為1mm、長度為3mm;該饋入金屬微帶20之第一伸展區段22寬度為1mm、長度為24mm;該切斷式迴圈金屬微帶30之第二起始區段31寬度為1mm、長度為15mm;該切斷式迴圈金屬微帶30之第一接續區段32寬度為1mm、長度為3mm;該切斷式迴圈金屬微帶30之主區段33寬度為1mm、長度為54mm;該切斷式迴圈金屬微帶30之第二伸展區段34寬度為1mm、長度為7mm。Moreover, when the area of the substrate 10 is a plane size of 55×8 mm 2 , the size of each metal microstrip may be designed as follows: the width of the first starting section 21 of the feeding metal microstrip 20 is 1 mm, length 3 mm; the first extended section 22 of the feed metal microstrip 20 has a width of 1 mm and a length of 24 mm; the second starting section 31 of the cut-off loop metal microstrip 30 has a width of 1 mm. The length of the first continuous section 32 of the cut-off loop metal microstrip 30 is 1 mm and the length is 3 mm; the main section 33 of the cut-off loop metal microstrip 30 has a width of 1 mm and a length of 1 mm. 54 mm; the second extended section 34 of the cut-off loop metal microstrip 30 has a width of 1 mm and a length of 7 mm.
另外,該共振金屬微帶40之第三起始區段41寬度為0.5mm、長度為24mm;該共振金屬微帶40之第二接續區段42寬度為1mm、長度為6mm;該共振金屬微帶40之第三伸展區段43寬度為1mm、長度為25.5mm。In addition, the third starting section 41 of the resonant metal microstrip 40 has a width of 0.5 mm and a length of 24 mm; the second connecting section 42 of the resonant metal microstrip 40 has a width of 1 mm and a length of 6 mm; The third stretch section 43 of the belt 40 has a width of 1 mm and a length of 25.5 mm.
至於,該馬刺形金屬微帶50之第四起始區段51寬度為1mm、長度為2mm;該馬刺形金屬微帶50之第四伸展區段52寬度為1mm、長度為15mm;該延伸金屬帶結構53之寬度為1.5mm、長度為8mm。As a result, the fourth starting section 51 of the spur-shaped metal microstrip 50 has a width of 1 mm and a length of 2 mm; the fourth extending section 52 of the spur-shaped metal microstrip 50 has a width of 1 mm and a length of 15 mm; The belt structure 53 has a width of 1.5 mm and a length of 8 mm.
此外,在本發明之天線設計上要注意的是馬刺形金屬微帶之第四起始區段51與該共振金屬微帶之第二接續區段42須保持適當的距離,這是為了避免兩段金屬微帶靠得太近而將低頻第二模態電流分佈直接由該第二接續區段42耦合至該第四起始區段51,導致該模態的共振頻率升高,而本實施例中,該馬第四起始區段51與該第二接續區段42之間距以7mm為佳。In addition, it should be noted in the antenna design of the present invention that the fourth starting section 51 of the horse-shaped metal microstrip and the second connecting section 42 of the resonant metal microstrip must be kept at an appropriate distance, in order to avoid two The segment metal microstrip is too close to couple the low frequency second modal current distribution directly from the second splicing section 42 to the fourth starting section 51, resulting in an increase in the resonant frequency of the modality, and the present implementation In the example, the distance between the fourth starting section 51 of the horse and the second connecting section 42 is preferably 7 mm.
綜上所述,本發明提供一較佳可行之小型化平面多頻天線,爰依法提呈發明專利之申請;本發明之技術內容及技術特點巳揭示如上,然而熟悉本項技術之人士仍可能基於本發明之揭示而作各種不背離本案發明精神之替換及修飾。因此,本發明之保護範圍應不限於實施例所揭示者,而應包括各種不背離本發明之替換及修飾,並為以下之申請專利範圍所涵蓋。In summary, the present invention provides a preferred and feasible miniaturized planar multi-frequency antenna, and the invention patent application is provided according to the law; the technical content and technical features of the present invention are disclosed above, but those skilled in the art may still The various alternatives and modifications may be made without departing from the spirit and scope of the invention. Therefore, the scope of the present invention should be construed as being limited by the scope of the appended claims
10...基材10. . . Substrate
20...饋入金屬微帶20. . . Feeding metal microstrip
21...第一起始區段twenty one. . . First starting segment
22...第一伸展區段twenty two. . . First stretch section
30...切斷式迴圈金屬微帶30. . . Cut-off loop metal microstrip
31...第二起始區段31. . . Second starting segment
32...第一接續區段32. . . First continuation section
33...主區段33. . . Main section
34...第二伸展區段34. . . Second stretch section
40...共振金屬微帶40. . . Resonant metal microstrip
41...第三起始區段41. . . Third starting section
42...第二接續區段42. . . Second continuation section
43...第三伸展區段43. . . Third stretch section
50...馬刺形金屬微帶50. . . Spur-shaped metal microstrip
51...第四起始區段51. . . Fourth starting segment
52...第四伸展區段52. . . Fourth stretch section
53...延伸金屬帶結構53. . . Extended metal strip structure
60...接地金屬面60. . . Grounded metal surface
70...導線70. . . wire
第一圖係為本發明中小型化平面天線之結構立體圖。The first figure is a perspective view of the structure of the miniaturized planar antenna of the present invention.
第二圖係為本發明中小型化平面天線的發展過程示意圖。The second figure is a schematic diagram of the development process of the miniaturized planar antenna of the present invention.
第三圖係為模擬本發明中小型化平面多頻天線發展過程的第二圖(C)結構與第二圖(D)結構所得之阻抗頻率響應圖。The third figure is an impedance frequency response diagram obtained by simulating the development process of the second (D) plane of the miniaturized planar multi-frequency antenna of the present invention and the structure of the second figure (D).
第四圖係為本發明中小型化平面多頻天線進行量測與模擬所得之反射損失圖。The fourth figure is a reflection loss diagram obtained by measuring and simulating the miniaturized planar multi-frequency antenna of the present invention.
10...基材10. . . Substrate
20...饋入金屬微帶20. . . Feeding metal microstrip
21...第一起始區段twenty one. . . First starting segment
22...第一伸展區段twenty two. . . First stretch section
30...切斷式迴圈金屬微帶30. . . Cut-off loop metal microstrip
31...第二起始區段31. . . Second starting segment
32...第一接續區段32. . . First continuation section
33...主區段33. . . Main section
34...第二伸展區段34. . . Second stretch section
40...共振金屬微帶40. . . Resonant metal microstrip
41...第三起始區段41. . . Third starting section
42...第二接續區段42. . . Second continuation section
43...第三伸展區段43. . . Third stretch section
50...馬刺形金屬微帶50. . . Spur-shaped metal microstrip
51...第四起始區段51. . . Fourth starting section
52...第四伸展區段52. . . Fourth stretch section
53...延伸金屬帶結構53. . . Extended metal strip structure
60...接地金屬面60. . . Grounded metal surface
70...導線70. . . wire
Claims (8)
Priority Applications (1)
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TW101112039A TWI524594B (en) | 2012-04-05 | 2012-04-05 | Miniaturized planar multi - frequency antenna |
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TW101112039A TWI524594B (en) | 2012-04-05 | 2012-04-05 | Miniaturized planar multi - frequency antenna |
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TW201342710A TW201342710A (en) | 2013-10-16 |
TWI524594B true TWI524594B (en) | 2016-03-01 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI723833B (en) * | 2020-04-01 | 2021-04-01 | 啟碁科技股份有限公司 | Antenna structure |
US11101560B2 (en) | 2019-07-12 | 2021-08-24 | Wistron Neweb Corporation | Antenna structure |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109616757B (en) * | 2018-11-28 | 2021-06-25 | 常熟市泓博通讯技术股份有限公司 | Dual-mode antenna array and matching method thereof |
CN112216989B (en) * | 2020-09-02 | 2022-05-13 | 珠海格力电器股份有限公司 | Ultra-wideband WIFI microstrip antenna, amplification method and small WIFI equipment |
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2012
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11101560B2 (en) | 2019-07-12 | 2021-08-24 | Wistron Neweb Corporation | Antenna structure |
TWI723833B (en) * | 2020-04-01 | 2021-04-01 | 啟碁科技股份有限公司 | Antenna structure |
US11296413B2 (en) | 2020-04-01 | 2022-04-05 | Wistron Neweb Corporation | Antenna structure |
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