TWI522393B - Polymer, insulating film, and flexible copper clad laminate - Google Patents

Polymer, insulating film, and flexible copper clad laminate Download PDF

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TWI522393B
TWI522393B TW104104366A TW104104366A TWI522393B TW I522393 B TWI522393 B TW I522393B TW 104104366 A TW104104366 A TW 104104366A TW 104104366 A TW104104366 A TW 104104366A TW I522393 B TWI522393 B TW I522393B
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insulating film
polymer
formula
copper foil
organic group
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TW201629121A (en
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方佾凱
洪宗泰
陳巧珮
陳昭丞
陳秋風
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台虹科技股份有限公司
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聚合物、絕緣膜以及軟性銅箔基板 Polymer, insulating film and soft copper foil substrate

本發明是有關於一種聚合物、絕緣膜以及軟性銅箔基板,且特別是有關於具低介電常數及低介電損耗的聚合物、包括所述聚合物的絕緣膜以及包括所述絕緣膜的軟性銅箔基板。 The present invention relates to a polymer, an insulating film, and a flexible copper foil substrate, and more particularly to a polymer having a low dielectric constant and a low dielectric loss, an insulating film including the polymer, and the like Soft copper foil substrate.

隨著電子產品逐漸朝向輕薄的趨勢發展,軟性電路板的使用需求量也大幅提升。軟性電路板的主要上游材料為軟性銅箔基板,其通常是透過將聚醯亞胺聚合物塗佈或貼合於銅箔上而製成。目前產業中所使用的聚醯亞胺聚合物具有良好耐熱性及尺寸安定性,但介電性質不佳,使得其應用範圍受到限制。因此,如何降低聚醯亞胺聚合物的介電常數使其同時具有良好介電性質、熱穩定性及尺寸安定性是目前此領域極欲發展的目標。 As electronic products gradually move toward thin and light trends, the demand for flexible circuit boards has also increased significantly. The main upstream material of the flexible circuit board is a flexible copper foil substrate, which is usually produced by coating or bonding a polyimide pigment polymer onto a copper foil. The polyiminoimine polymers currently used in the industry have good heat resistance and dimensional stability, but the dielectric properties are not good, which limits their application range. Therefore, how to reduce the dielectric constant of the polyimine polymer to have good dielectric properties, thermal stability and dimensional stability is currently an extremely desirable target in this field.

本發明提供一種聚合物,其包括結構新穎的醯亞胺重複單元且包括所述聚合物的絕緣膜具有低介電常數及低介電損耗,而所述絕緣膜適合應用於軟性銅箔基板中。 The present invention provides a polymer comprising a novel quinone imine repeating unit and an insulating film comprising the polymer having a low dielectric constant and a low dielectric loss, and the insulating film is suitable for use in a soft copper foil substrate .

本發明的聚合物包括至少25mol%之以式1表示的重複單元: 其中Ar為衍生自含有芳香族基的四羧酸二酐的四價有機基,以及A為衍生自含有環己烷基的二胺的二價有機基,且二價有機基的碳數為8至18。 The polymer of the present invention comprises at least 25 mol% of the repeating unit represented by Formula 1: Wherein Ar is a tetravalent organic group derived from a tetracarboxylic dianhydride containing an aromatic group, and A is a divalent organic group derived from a diamine containing a cyclohexane group, and the carbon number of the divalent organic group is 8 To 18.

在本發明的一實施方式中,上述以式1表示的重複單元的數目在10至2000之間。 In an embodiment of the invention, the number of repeating units represented by the above formula 1 is between 10 and 2,000.

在本發明的一實施方式中,上述的Ar包括中的至少一者,且B包括單鍵、-O-、-CH2-、-C(CH3)2-、-SO2-或-CO-。 In an embodiment of the invention, the Ar includes and At least one of, and B includes a single bond, -O-, -CH 2 -, -C(CH 3 ) 2 -, -SO 2 - or -CO-.

在本發明的一實施方式中,上述的A包括中的至少一者。 In an embodiment of the invention, the above A includes , , , and At least one of them.

本發明的聚合物包括以式2表示的結構: 其中Ar為衍生自含有芳香族基的四羧酸二酐的四價有機基、A為衍生自含有環己烷基的二胺的二價有機基,且二價有機基的碳數為8至18、Ψ為其他重複單元以及0.25X1。 The polymer of the present invention includes the structure represented by Formula 2: Wherein Ar is a tetravalent organic group derived from a tetracarboxylic dianhydride containing an aromatic group, A is a divalent organic group derived from a diamine containing a cyclohexane group, and the carbon number of the divalent organic group is 8 to 18, Ψ for other repeat units and 0.25 X 1.

在本發明的一實施方式中,上述的Ar包括中的至少一者,且B包括單鍵、-O-、-CH2-、-C(CH3)2-、-SO2-或-CO-。 In an embodiment of the invention, the Ar includes and At least one of, and B includes a single bond, -O-, -CH 2 -, -C(CH 3 ) 2 -, -SO 2 - or -CO-.

在本發明的一實施方式中,上述的A包括中的至少一者。 In an embodiment of the invention, the above A includes , , , and At least one of them.

在本發明的一實施方式中,上述的Ψ以式3表示: 其中Φ為衍生自含有芳香族基或環狀脂肪族基的二胺的二價有機基、Ar包括中的至少一者,且B包括單鍵、-O-、-CH2-、-C(CH3)2-、-SO2-或-CO-。 In an embodiment of the invention, the above Ψ is expressed by Equation 3: Wherein Φ is a divalent organic group derived from a diamine containing an aromatic group or a cyclic aliphatic group, and Ar includes and At least one of, and B includes a single bond, -O-, -CH 2 -, -C(CH 3 ) 2 -, -SO 2 - or -CO-.

在本發明的一實施方式中,上述的Φ包括中的至少一者。 In an embodiment of the invention, the above Φ includes and At least one of them.

在本發明的一實施方式中,上述的Φ包括,且的莫耳比為9:1至1:9。 In an embodiment of the invention, the above Φ includes and And versus The molar ratio is 9:1 to 1:9.

本發明的絕緣膜包括前述的聚合物。 The insulating film of the present invention includes the aforementioned polymer.

在本發明的一實施方式中,上述的絕緣膜的介電常數為2.8至3.5、以及介電損耗為0.005至0.014。 In an embodiment of the invention, the insulating film has a dielectric constant of 2.8 to 3.5 and a dielectric loss of 0.005 to 0.014.

本發明的軟性銅箔基板包括銅箔以及前述的絕緣膜。絕緣膜配置在銅箔上。 The flexible copper foil substrate of the present invention comprises a copper foil and the aforementioned insulating film. The insulating film is disposed on the copper foil.

在本發明的一實施方式中,上述軟性銅箔基板更包括黏著層,配置於銅箔與絕緣膜之間。 In one embodiment of the invention, the soft copper foil substrate further includes an adhesive layer disposed between the copper foil and the insulating film.

基於上述,本發明所提出的聚合物透過採用具特定結構及特定比例的二胺單體以及含有芳香族基的二酐單體來製造,使得聚合物及包括其的絕緣膜能夠同時具有低介電常數、低介電損耗及高熱穩定性。 Based on the above, the polymer proposed by the present invention is manufactured by using a diamine monomer having a specific structure and a specific ratio and a dianhydride monomer containing an aromatic group, so that the polymer and the insulating film including the same can simultaneously have a low medium. Electrical constant, low dielectric loss and high thermal stability.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施方式作詳細說明如下。 The above described features and advantages of the present invention will be more apparent from the following description.

在本文中,由「一數值至另一數值」表示的範圍,是一種避免在說明書中一一列舉該範圍中的所有數值的概要性表示方式。因此,某一特定數值範圍的記載,涵蓋該數值範圍內的任意數值以及由該數值範圍內的任意數值界定出的較小數值範圍,如同在說明書中明文寫出該任意數值和該較小數值範圍一樣。 In the present specification, the range represented by "a value to another value" is a schematic representation that avoids enumerating all the values in the range in the specification. Therefore, the recitation of a particular range of values is intended to include any value in the range of values and the range of values defined by any value in the range of values, as in the specification. The scope is the same.

在本文中,有時以鍵線式(skeleton formula)表示聚合物或基團的結構。這種表示法可以省略碳原子、氫原子以及碳氫鍵。當然,結構式中有明確繪出原子或原子基團的,則以繪示者為準。 Herein, the structure of a polymer or a group is sometimes represented by a skeleton formula. This representation can omit carbon atoms, hydrogen atoms, and carbon-hydrogen bonds. Of course, if the atom or atomic group is clearly drawn in the structural formula, the person who prescribes it shall prevail.

本發明的一實施方式提供一種聚合物,其包括至少25mol%之以式1表示的重複單元: One embodiment of the present invention provides a polymer comprising at least 25 mol% of a repeating unit represented by Formula 1:

在上述式1中,Ar為衍生自含有芳香族基的四羧酸二酐的四價有機基。也就是說,Ar為含有芳香族基的四羧酸二酐中除了2個羧酸酐基(-(CO)2O)以外的殘基。在本文中,所述含有芳香族基的四羧酸二酐亦稱為二酐單體。另外,在本實施方式中,製備式1所示的重複單元時,可採用一種二酐單體或多種二酐單體。 In the above formula 1, Ar is a tetravalent organic group derived from a tetracarboxylic dianhydride containing an aromatic group. That is, Ar is a residue other than the two carboxylic anhydride groups (-(CO) 2 O) in the tetracarboxylic dianhydride containing an aromatic group. Herein, the aromatic group-containing tetracarboxylic dianhydride is also referred to as a dianhydride monomer. Further, in the present embodiment, in the case of preparing a repeating unit represented by Formula 1, a dianhydride monomer or a plurality of dianhydride monomers may be employed.

具體而言,Ar包括中的至少一者,且B包括單鍵、-O-、-CH2-、-C(CH3)2-、-SO2-或-CO-。也就是說,所述含有芳香族基的四羧酸二酐例如是均苯四甲酸二酐(1,2,4,5-Benzenetetracarboxylic anhydride,簡稱PMDA)、3,3',4,4'-聯苯四羧酸二酐(3,3',4,4'-Biphenyltetracarboxylic dianhydride,簡稱BPDA)、4,4'-氧双鄰苯二甲酸酐(Bis-(3-phthalyl anhydride) ether,簡稱ODPA)、3,3',4,4'-二苯甲酮四甲酸二酐(3,3',4,4'-Benzophenonetetracarboxylic dianhydride,簡稱BTDA)。 Specifically, Ar includes and At least one of, and B includes a single bond, -O-, -CH 2 -, -C(CH 3 ) 2 -, -SO 2 - or -CO-. That is, the aromatic group-containing tetracarboxylic dianhydride is, for example, pyromellitic dianhydride (1,2,4,5-Benzenetetracarboxylic anhydride, PMDA for short), 3,3', 4,4'- Bismuth tetracarboxylic dianhydride (3,3',4,4'-Biphenyltetracarboxylic dianhydride, BPDA for short), 4,4'-oxyphthalic anhydride (Bis-(3-phthalyl anhydride) ether, ODPA for short) , 3,3',4,4'-Benzophenonetetracarboxylic dianhydride (BTDA).

當式1所示的重複單元含有衍生自含有芳香族基的四羧酸二酐的四價有機基時,可得使聚合物具有高熱穩定性。另外,由於上述所列之含有芳香族基的四羧酸二酐的價格便宜,故透過使用該些含有芳香族基的四羧酸二酐不但聚合物能夠具有符合市場需求的性質,其製造成本也可降低,使得具有工業化價值。 When the repeating unit represented by Formula 1 contains a tetravalent organic group derived from a tetracarboxylic dianhydride containing an aromatic group, it is possible to impart high thermal stability to the polymer. In addition, since the above-mentioned aromatic group-containing tetracarboxylic dianhydride is inexpensive, the use of the aromatic group-containing tetracarboxylic dianhydride can not only have a property satisfying market demand, but also a manufacturing cost thereof. It can also be reduced to make it industrially valuable.

在上述式1中,A為衍生自含有環己烷基的二胺的二價有機基,且二價有機基的碳數為8至18,較佳為8至16。也就是說,A為含有環己烷基的二胺中除了2個氨基(-NH2)以外的殘基。在本文中,所述含有環己烷基的二胺亦稱為二胺單體。另外,在本實施方式中,製備式1所示的重複單元時,可採用一種二胺單體或多種二胺單體。 In the above formula 1, A is a divalent organic group derived from a diamine containing a cyclohexane group, and the divalent organic group has a carbon number of 8 to 18, preferably 8 to 16. That is, A is a residue other than two amino groups (-NH 2 ) in the diamine containing a cyclohexane group. Herein, the cyclohexane group-containing diamine is also referred to as a diamine monomer. Further, in the present embodiment, in the case of preparing a repeating unit represented by Formula 1, a diamine monomer or a plurality of diamine monomers may be employed.

具體而言,A包括中的至少一者。也就是說,所述含有環己烷基的二胺例如是4,4'-二氨基二環己基甲烷(4,4'-Diaminodicyclohexyl methane,簡稱MBCHA)、1,3-二(氨甲基)環己烷(1,3-Di(aminomethyl)cyclohexane)、1,4-二(氨甲基)環己烷(1,4-Di(aminomethyl)cyclohexane)、雙(氨甲基)雙環[2.2.1] 庚烷(bis(aminomethyl)bicyclo[2.2.1]heptane)、二氨甲基環己基甲烷(4,4'-Methylenebis(2-methylcyclohexylamine))。 Specifically, A includes , , , and At least one of them. That is, the cyclohexane group-containing diamine is, for example, 4,4'-diaminodicyclohexyl methane (abbreviated as MBCHA) or 1,3-bis(aminomethyl). Cyclohexane (1,3-Di(aminomethyl)cyclohexane), 1,4-di(aminomethyl)cyclohexane, bis(aminomethyl)cyclohexane [2.2. 1] bis(aminomethyl)bicyclo[2.2.1]heptane), 4,4'-Methylenebis(2-methylcyclohexylamine).

值得一提的是,由於4,4'-二氨基二環己基甲烷、1,3-二(氨甲基)環己烷、1,4-二(氨甲基)環己烷、雙(氨甲基)雙環[2.2.1]庚烷或二氨甲基環己基甲烷具有低介電常數、低介電損耗及良好熱穩定性的性質,聚合物透過包括含有衍生自4,4'-二氨基二環己基甲烷、1,3-二(氨甲基)環己烷、1,4-二(氨甲基)環己烷、雙(氨甲基)雙環[2.2.1]庚烷及二氨甲基環己基甲烷中的至少一者的二價有機基的式1所示的重複單元,不但可得使其具有高熱穩定性,還可調控其介電常數及介電損耗。詳細而言,與結構中未含有衍生自4,4'-二氨基二環己基甲烷、1,3-二(氨甲基)環己烷、1,4-二(氨甲基)環己烷、雙(氨甲基)雙環[2.2.1]庚烷及二氨甲基環己基甲烷的二價有機基的聚合物相比,結構中含有衍生自4,4'-二氨基二環己基甲烷、1,3-二(氨甲基)環己烷、1,4-二(氨甲基)環己烷、雙(氨甲基)雙環[2.2.1]庚烷及二氨甲基環己基甲烷中的至少一者的二價有機基的聚合物具有較低的介電常數及介電損耗。 It is worth mentioning that due to 4,4'-diaminodicyclohexylmethane, 1,3-bis(aminomethyl)cyclohexane, 1,4-bis(aminomethyl)cyclohexane, bis (ammonia) Methyl)bicyclo[2.2.1]heptane or diaminomethylcyclohexylmethane has low dielectric constant, low dielectric loss and good thermal stability, and the polymer permeation includes derivatives derived from 4,4'-di Aminodicyclohexylmethane, 1,3-bis(aminomethyl)cyclohexane, 1,4-bis(aminomethyl)cyclohexane, bis(aminomethyl)bicyclo[2.2.1]heptane and two The repeating unit represented by Formula 1 of the divalent organic group of at least one of aminomethylcyclohexylmethane can be obtained not only to have high thermal stability but also to adjust its dielectric constant and dielectric loss. In detail, the structure does not contain a derivative derived from 4,4'-diaminodicyclohexylmethane, 1,3-bis(aminomethyl)cyclohexane, 1,4-bis(aminomethyl)cyclohexane. Compared with the divalent organic group polymer of bis(aminomethyl)bicyclo[2.2.1]heptane and diaminomethylcyclohexylmethane, the structure contains derivatized from 4,4'-diaminodicyclohexylmethane. , 1,3-bis(aminomethyl)cyclohexane, 1,4-bis(aminomethyl)cyclohexane, bis(aminomethyl)bicyclo[2.2.1]heptane and diaminomethylcyclohexyl The divalent organic based polymer of at least one of methane has a lower dielectric constant and dielectric loss.

另外,如上所述,式1所示的重複單元為由二酐單體及二胺單體進行醯亞胺化反應而得的醯亞胺重複單元。詳細而言,所述醯亞胺化反應是在溶劑中進行,所述溶劑例如是N-甲基-2-吡咯烷酮(NMP)、N,N-二甲基乙醯胺(N,N-dimethylacetamide,DMAc)、二甲基亞碸(dimethyl sulfoxide,DMSO)、二甲基甲醯胺(dimethylformamide,DMF)、六甲基磷醯胺 (hexamethylphosphoramide)或間甲酚(m-cresol)。另外,所述醯亞胺化反應的醯亞胺化比率為100%。 Further, as described above, the repeating unit represented by Formula 1 is a quinone imine repeating unit obtained by carrying out a ruthenium reaction of a dianhydride monomer and a diamine monomer. In detail, the oxime imidization reaction is carried out in a solvent such as N-methyl-2-pyrrolidone (NMP) or N,N-dimethylacetamide (N, N-dimethylacetamide). , DMAc), dimethyl sulfoxide (DMSO), dimethylformamide (DMF), hexamethylphosphoniumamine (hexamethylphosphoramide) or m-cresol. Further, the oxime imidization ratio of the oxime imidization reaction was 100%.

另外,在本實施方式中,以式1表示的重複單元的數目在10至2000之間,較佳在20至1500之間。 Further, in the present embodiment, the number of repeating units represented by Formula 1 is between 10 and 2,000, preferably between 20 and 1,500.

本發明的另一實施方式提供一種聚合物,其包括以式2表示的結構: Another embodiment of the present invention provides a polymer comprising the structure represented by Formula 2:

在上述式2中,Ar的定義與式1中的Ar的定義相同,且A的定義與式1中的A的定義相同。從另一觀點而言,式2表示的結構中含有式1表示的重複單元。 In the above formula 2, the definition of Ar is the same as the definition of Ar in the formula 1, and the definition of A is the same as the definition of A in the formula 1. From another point of view, the structure represented by Formula 2 contains the repeating unit represented by Formula 1.

在上述式2中,Ψ為其他重複單元。也就是說,Ψ為不同於式1表示的重複單元的重複單元。詳細而言,Ψ可以是以式3表示的重複單元: In the above formula 2, hydrazine is another repeating unit. That is, Ψ is a repeating unit different from the repeating unit represented by Formula 1. In detail, Ψ may be a repeating unit represented by Formula 3:

在上述式3中,Ar的定義與式1中的Ar的定義相同。 In the above formula 3, the definition of Ar is the same as the definition of Ar in the formula 1.

在上述式3中,Φ為衍生自含有芳香族基或環狀脂肪族基的二胺的二價有機基。也就是說,Φ為衍生自不含有環己烷基的二胺的二價有機基。另外,在本實施方式中,製備式3所示的其他重複單元時,可採用一種二胺單體或多種二胺單體。 In the above formula 3, Φ is a divalent organic group derived from a diamine containing an aromatic group or a cyclic aliphatic group. That is, Φ is a divalent organic group derived from a diamine which does not contain a cyclohexane group. Further, in the present embodiment, when preparing other repeating units represented by Formula 3, a diamine monomer or a plurality of diamine monomers may be employed.

具體而言,Φ包括中的至少一者。也就是說,所述含有芳香族基或環狀脂肪族基的二胺例如是對苯二胺(p-Phenylenediamine,簡稱PDA)、4,4'-二胺基苯醯基苯胺(4,4'-Diaminobenzanilide,簡稱DABA)。 Specifically, Φ includes and At least one of them. That is, the diamine containing an aromatic group or a cyclic aliphatic group is, for example, p-Phenylenediamine (PDA), 4,4'-diaminophenylphenylaniline (4, 4). '-Diaminobenzanilide, referred to as DABA).

值得說明的是,式3所示的其他重複單元透過含有衍生自對苯二胺及/或4,4'-二胺基苯醯基苯胺的二價有機基,使得其分子間作用力增強。詳細而言,對苯二胺具有π電子系統且具有良好的對稱性,透過含有衍生自對苯二胺的二價有機基,使得分子間的π-π堆疊力(π-π stacking force)可增強,從而形成π-π堆疊(π-π stacking)結構;而4,4'-二胺基苯醯基苯胺具有屬於氫結合基團的醯胺基,使得當式3所示的其他重複單元含有衍生自4,4'-二胺基苯醯基苯胺的二價有機基時,可在分子間形成氫鍵。 It is to be noted that the other repeating unit represented by Formula 3 has an intermolecular force enhanced by the passage of a divalent organic group derived from p-phenylenediamine and/or 4,4'-diaminophenylphenylaniline. In detail, p-phenylenediamine has a π-electron system and has good symmetry. By containing a divalent organic group derived from p-phenylenediamine, the intermolecular π-π stacking force can be Reinforced to form a π-π stacking structure; and 4,4'-diaminophenylphenylaniline has a guanamine group belonging to a hydrogen bonding group, such that other repeating units represented by Formula 3 When a divalent organic group derived from 4,4'-diaminophenylphenylaniline is contained, a hydrogen bond can be formed between molecules.

在上述式2中,0.25X1,較佳是0.5X1。也就是說,式2所示的結構中可能僅含有式1表示的重複單元而不含有其他重複單元,或是含有特定比例的其他重複單元。從另一觀點而言,在本實施方式中,製備式2所示的結構時,可採用一種二胺單體或多種二胺單體。 In the above formula 2, 0.25 X 1, preferably 0.5 X 1. That is to say, the structure shown in Formula 2 may contain only the repeating unit represented by Formula 1 without containing other repeating units, or contain other repeating units in a specific ratio. From another point of view, in the present embodiment, when preparing the structure represented by Formula 2, a diamine monomer or a plurality of diamine monomers may be employed.

進一步而言,當X=1時,式2所示的結構僅含有式1表示的重複單元而不含有其他重複單元。而當聚合物僅包括式2所示的結構時,其為透過採用含有環己烷基的二胺(即4,4'-二氨基二環己基甲烷、1,3-二(氨甲基)環己烷、1,4-二(氨甲基)環己烷、雙 (氨甲基)雙環[2.2.1]庚烷及二氨甲基環己基甲烷中的至少一者)作為二胺單體來製備的聚醯亞胺聚合物。 Further, when X=1, the structure represented by Formula 2 contains only the repeating unit represented by Formula 1 and does not contain other repeating units. When the polymer includes only the structure represented by Formula 2, it is a diamine containing a cyclohexane group (ie, 4,4'-diaminodicyclohexylmethane, 1,3-bis(aminomethyl)). Cyclohexane, 1,4-bis(aminomethyl)cyclohexane, double A polyilylimine polymer prepared as a diamine monomer by at least one of (aminomethyl)bicyclo[2.2.1]heptane and diaminomethylcyclohexylmethane.

值得說明的是,如前文所述,4,4'-二氨基二環己基甲烷、1,3-二(氨甲基)環己烷、1,4-二(氨甲基)環己烷、雙(氨甲基)雙環[2.2.1]庚烷或二氨甲基環己基甲烷具有低介電常數、低介電損耗及良好熱穩定性的性質,以及含有芳香族基的四羧酸二酐具有高熱穩定的性質,故此時包括式2所示的結構的聚合物不但具有高熱穩定性,還具有低的介電常數及介電損耗。 It is worth noting that, as mentioned above, 4,4'-diaminodicyclohexylmethane, 1,3-bis(aminomethyl)cyclohexane, 1,4-bis(aminomethyl)cyclohexane, Bis(aminomethyl)bicyclo[2.2.1]heptane or diaminomethylcyclohexylmethane has low dielectric constant, low dielectric loss and good thermal stability, and aromatic acid-containing tetracarboxylic acid The anhydride has high heat-stable properties, so that the polymer including the structure represented by Formula 2 at this time has not only high thermal stability but also low dielectric constant and dielectric loss.

另外,如前文所述,所述聚醯亞胺聚合物是在溶劑的存在下製備,所述溶劑例如是NMP、DMAc、DMSO、DMF、六甲基磷醯胺或間甲酚,而所述聚醯亞胺聚合物的醯亞胺化比率為100%。 Further, as described above, the polyimine polymer is prepared in the presence of a solvent such as NMP, DMAc, DMSO, DMF, hexamethylphosphonium or m-cresol, and the The polyamidene polymer has a ruthenium iodide ratio of 100%.

而當0.25X<1時,式2所示的結構含有大於0且小於或等於75莫耳百分比的其他重複單元。進一步而言,當聚合物僅包括式2所示的結構且其他重複單元以式3表示時,所述聚合物為除了採用含有環己烷基的二胺外,還採用其他不含環己烷基的二胺單體來製備的聚醯亞胺聚合物。 And when 0.25 When X < 1, the structure shown in Formula 2 contains other repeating units greater than 0 and less than or equal to 75 mole percent. Further, when the polymer includes only the structure represented by Formula 2 and the other repeating unit is represented by Formula 3, the polymer is other than the cyclohexane containing the cyclohexane group. A polyimine polymer prepared from a diamine monomer.

具體而言,在一實施方式中,式2所示的結構可透過使用4,4'-二氨基二環己基甲烷及對苯二胺作為二胺單體來製備;在另一實施方式中,式2所示的結構也可透過使用4,4'-二氨基二環己基甲烷及4,4'-二胺基苯醯基苯胺作為二胺單體來製備;或在又一實施方式中,式2所示的結構也可透過使用4,4'-二氨基二環己 基甲烷、對苯二胺及4,4'-二胺基苯醯基苯胺作為二胺單體來製備。另外,當同時使用4,4'-二氨基二環己基甲烷、對苯二胺及4,4'-二胺基苯醯基苯胺作為二胺單體時,對苯二胺及4,4'-二胺基苯醯基苯胺的莫耳比例如是9:1至1:9,較佳是4:1至3:2。然而,本發明並不僅限於此,領域中具有通常知識者根據前文應理解,只要同時使用含有環己烷基的二胺以及含有芳香族基或環狀脂肪族基但不含有環己烷基的二胺作為二胺單體來製備式2所示的結構即落入本發明的範疇內。 Specifically, in one embodiment, the structure shown in Formula 2 can be prepared by using 4,4'-diaminodicyclohexylmethane and p-phenylenediamine as the diamine monomer; in another embodiment, The structure shown in Formula 2 can also be prepared by using 4,4'-diaminodicyclohexylmethane and 4,4'-diaminophenylhydrazine aniline as the diamine monomer; or in still another embodiment, The structure shown in Formula 2 can also be used by using 4,4'-diaminobicyclohexane. Methane, p-phenylenediamine and 4,4'-diaminophenylphenylaniline are prepared as diamine monomers. In addition, when 4,4'-diaminodicyclohexylmethane, p-phenylenediamine and 4,4'-diaminophenylphenylaniline are simultaneously used as the diamine monomer, p-phenylenediamine and 4,4' The molar ratio of the diaminobenzoylaniline is, for example, from 9:1 to 1:9, preferably from 4:1 to 3:2. However, the present invention is not limited thereto, and it is understood by those having ordinary knowledge in the art that as long as a diamine containing a cyclohexane group and an aromatic group or a cyclic aliphatic group but not containing a cyclohexane group are used at the same time. The preparation of the structure represented by Formula 2 as a diamine monomer falls within the scope of the present invention.

值得說明的是,如前文所述,在結構中含有衍生自對苯二胺的二價有機基可使得分子間的π-π堆疊力增強,以及含有衍生自4,4'-二胺基苯醯基苯胺的二價有機基可使得分子間具有氫鍵,因此,包括式2所示的結構的聚合物透過含有衍生自對苯二胺及/或4,4'-二胺基苯醯基苯胺的二價有機基,可使得其熱膨脹係數降低。詳細而言,與未含有衍生自對苯二胺及4,4'-二胺基苯醯基苯胺的二價有機基的聚合物相比,包括式2所示之含有衍生自對苯二胺及/或4,4'-二胺基苯醯基苯胺的二價有機基的結構的聚合物具有較低的熱膨脹係數。 It is worth noting that, as described above, the inclusion of a divalent organic group derived from p-phenylenediamine in the structure enhances the intermolecular π-π stacking force and contains derived from 4,4'-diaminobenzene. The divalent organic group of mercaptoaniline may have a hydrogen bond between the molecules, and therefore, the polymer including the structure represented by Formula 2 has a derivatization derived from p-phenylenediamine and/or 4,4'-diaminophenyl fluorenyl group. The divalent organic group of aniline can reduce its thermal expansion coefficient. In detail, the inclusion of the formula 2 includes a derivative derived from p-phenylenediamine as compared with a polymer not containing a divalent organic group derived from p-phenylenediamine and 4,4'-diaminophenylphenylaniline. And/or a polymer having a divalent organic group structure of 4,4'-diaminophenyl phenylaniline has a lower coefficient of thermal expansion.

也就是說,包括式2所示的結構的聚合物透過含有具有良好熱穩定性且可使介電常數及介電損耗降低之衍生自4,4'-二氨基二環己基甲烷、1,3-二(氨甲基)環己烷、1,4-二(氨甲基)環己烷、雙(氨甲基)雙環[2.2.1]庚烷及二氨甲基環己基甲烷中的至少一者的二價有機基外,更進一步搭配可增強分子間作用力之衍生自對 苯二胺及/或4,4'-二胺基苯醯基苯胺的二價有機基,使得其在介電性質、熱穩定性及尺寸安定性等物理特性之間能夠取得良好的平衡。也就是說,包括式2所示的結構的聚合物得以同時具有低介電常數、低介電損耗、與銅箔相近的熱膨脹係數及高熱穩定性的性質。 That is, the polymer including the structure represented by Formula 2 is derived from 4,4'-diaminodicyclohexylmethane, 1,3, which has good thermal stability and can lower the dielectric constant and dielectric loss. - at least two of bis(aminomethyl)cyclohexane, 1,4-bis(aminomethyl)cyclohexane, bis(aminomethyl)bicyclo[2.2.1]heptane and diaminomethylcyclohexylmethane In addition to the divalent organic group of one, further integration can enhance the intermolecular force The divalent organic group of phenylenediamine and/or 4,4'-diaminophenylphenylaniline makes it possible to achieve a good balance between physical properties such as dielectric properties, thermal stability and dimensional stability. That is, the polymer including the structure shown in Formula 2 has both a low dielectric constant, a low dielectric loss, a thermal expansion coefficient similar to that of the copper foil, and a high thermal stability property.

另外,本發明的聚合物可為薄膜、粉體或溶液等的形態。下文中,以聚合物為薄膜形態為例來加以說明。 Further, the polymer of the present invention may be in the form of a film, a powder, a solution or the like. Hereinafter, the form of the polymer as a film will be described as an example.

本發明的另一實施方式提供一種絕緣膜,包括前述聚合物。詳細而言,所述絕緣膜的介電常數為2.8至3.5、以及介電損耗為0.005至0.014。 Another embodiment of the present invention provides an insulating film comprising the aforementioned polymer. In detail, the insulating film has a dielectric constant of 2.8 to 3.5 and a dielectric loss of 0.005 to 0.014.

值得說明的是,如前文所述,由於聚合物不但可具有低介電常數、低介電損耗及高熱穩定性,進一步還可具有與銅箔相近的熱膨脹係數,故絕緣膜同樣地能夠具有低介電常數、低介電損耗及高熱穩定性,以及進一步具有與銅箔相近的熱膨脹係數,藉此所述絕緣膜不但符合產業上的需求而適用於軟性銅箔基板中,還具有工業化價值。 It should be noted that, as described above, since the polymer can have not only a low dielectric constant, a low dielectric loss, and a high thermal stability, but also has a thermal expansion coefficient similar to that of the copper foil, the insulating film can also have a low value. The dielectric constant, the low dielectric loss and the high thermal stability, and further have a thermal expansion coefficient similar to that of the copper foil, whereby the insulating film is suitable for use in a soft copper foil substrate not only in compliance with industrial requirements, but also has industrial value.

本發明的另一實施方式更提供一種軟性銅箔基板(flexible copper clad laminate,FCCL),包括銅箔以及前述的絕緣膜,其中絕緣膜即作為軟性銅箔基板中的軟性基板。作為銅箔,可利用所屬領域中技術人員所周知的軟性銅箔基板所使用的任一種銅箔,例如可為電解銅箔或壓延銅箔,且厚度也並不特別限定。 Another embodiment of the present invention further provides a flexible copper clad laminate (FCCL) comprising a copper foil and the foregoing insulating film, wherein the insulating film serves as a flexible substrate in the flexible copper foil substrate. As the copper foil, any of the copper foils used in the soft copper foil substrate known to those skilled in the art can be used, and for example, it can be an electrolytic copper foil or a rolled copper foil, and the thickness is not particularly limited.

另外,本發明的軟性銅箔基板更包括配置在銅箔與絕緣膜之間的黏著層,用以使銅箔能夠緊密地附著在絕緣膜上。黏著層的材質例如是熱固性樹脂。 Further, the flexible copper foil substrate of the present invention further includes an adhesive layer disposed between the copper foil and the insulating film for allowing the copper foil to closely adhere to the insulating film. The material of the adhesive layer is, for example, a thermosetting resin.

值得說明的是,如前文所述,由於絕緣膜具有低介電常數、低介電損耗及高熱穩定性,故軟性銅箔基板能夠擁有良好的可靠性以及製程良率。詳細而言,絕緣膜具有低介電常數及低介電損耗,藉此使得軟性銅箔基板製成的軟性電路板中線路之間的電性干擾降低,有助於避免發生寄生電容及其衍生的功率負載,及避免訊號延遲或干擾而造成功率消耗上升。另外,由於絕緣膜進一步可具有與銅箔相近的熱膨脹係數,藉此能夠有效抑制絕緣膜由於製造軟性銅箔基板時的高溫製程而引起的尺寸變化,進而避免發生對位偏移而提高軟性銅箔基板的尺寸安定性。 It should be noted that, as described above, since the insulating film has a low dielectric constant, low dielectric loss, and high thermal stability, the soft copper foil substrate can have good reliability and process yield. In detail, the insulating film has a low dielectric constant and a low dielectric loss, thereby reducing electrical interference between lines in a flexible circuit board made of a soft copper foil substrate, and helping to avoid parasitic capacitance and its derivatives. The power load, and avoiding signal delay or interference, resulting in increased power consumption. In addition, since the insulating film can further have a coefficient of thermal expansion similar to that of the copper foil, the dimensional change caused by the high-temperature process of the insulating film due to the manufacture of the flexible copper foil substrate can be effectively suppressed, thereby preventing the occurrence of alignment shift and improving the soft copper. The dimensional stability of the foil substrate.

下文將參照實施例1-12及比較例1,更具體地描述本發明的特徵。雖然描述了以下實施例1-12,但是在不逾越本發明範疇之情況下,可適當地改變所用材料、其量及比率、處理細節以及處理流程等等。因此,不應由下文所述的實施例對本發明作出限制性地解釋。 Features of the present invention will be more specifically described below with reference to Examples 1-12 and Comparative Example 1. Although the following examples 1-12 are described, the materials used, the amounts and ratios thereof, the processing details, the processing flow, and the like can be appropriately changed without departing from the scope of the invention. Therefore, the invention should not be construed restrictively by the examples described below.

製備實施例1至實施例7及比較例1的絕緣膜所使用之主要材料及設備的資訊如下所示。 Information on the main materials and equipment used in the preparation of the insulating films of Examples 1 to 7 and Comparative Example 1 is as follows.

4,4'-二氨基二環己基甲烷:購自TCI公司。 4,4'-Diaminodicyclohexylmethane: purchased from TCI Corporation.

對苯二胺:購自東信化學公司。 P-phenylenediamine: purchased from Eastcom Chemical Company.

4,4'-二氨基苯醯基苯胺:購自TCI公司。 4,4'-Diaminophenylhydrazinoaniline: purchased from TCI Corporation.

3,3',4,4'-聯苯四羧酸二酐:購自JFE化學股份有限公司。 3,3',4,4'-biphenyltetracarboxylic dianhydride: purchased from JFE Chemical Co., Ltd.

均苯四甲酸二酐:購自JFE公司。 Pyromellitic dianhydride: purchased from JFE Corporation.

4,4'-氧双鄰苯二甲酸酐:購自JFE公司。 4,4'-oxydiphthalic anhydride: purchased from JFE Corporation.

N-甲基-2-吡咯烷酮:購自TEDIA公司。 N-methyl-2-pyrrolidone: purchased from TEDIA Corporation.

低測定力測定儀:由三豐美國公司(Mitutoyo America Corporation)製造,設備名為Litematic LV-50A。 Low force meter: manufactured by Mitutoyo America Corporation under the name Litematic LV-50A.

實施例1Example 1

在水浴(室溫)下秤取0.1486mol(31.27g)的4,4'-二氨基二環己基甲烷(以下簡稱MBCHA)溶於作為溶劑之420g的N-甲基-2-吡咯烷酮(以下簡稱NMP)中。在水浴下加入0.1486mol(43.73g)的3,3',4,4'-聯苯四羧酸二酐(以下簡稱BPDA)。接著,在水浴下,反應5~7小時後即獲得固含量為15%的聚醯胺酸溶液。之後,將所述聚醯胺酸溶液在150℃下烘烤10分鐘後,在350℃之氮氣環境下進行醯亞胺化反應(脫水環化)30~40分鐘,以獲得實施例1的絕緣膜,其中醯亞胺化比率為100%,且以低測定力測定儀進行厚度的測量,得到厚度約為12μm至22μm。 0.1486 mol (31.27 g) of 4,4'-diaminodicyclohexylmethane (hereinafter abbreviated as MBCHA) was dissolved in a water bath (room temperature) in 420 g of N-methyl-2-pyrrolidone as a solvent (hereinafter referred to as NMP). 0.1486 mol (43.73 g) of 3,3',4,4'-biphenyltetracarboxylic dianhydride (hereinafter referred to as BPDA) was added under a water bath. Next, a polyamine solution having a solid content of 15% was obtained after 5 to 7 hours of reaction in a water bath. Thereafter, the polyamic acid solution was baked at 150 ° C for 10 minutes, and then subjected to hydrazine imidization (dehydration cyclization) for 30 to 40 minutes under a nitrogen atmosphere of 350 ° C to obtain the insulation of Example 1. The film, wherein the ruthenium imidation ratio was 100%, and the thickness was measured with a low force meter to obtain a thickness of about 12 μm to 22 μm.

實施例2Example 2

在水浴(室溫)下,秤取0.0438mol(9.21g)的MBCHA溶於作為溶劑之425g的NMP中。在水浴下加入0.1753mol(51.57g)的BPDA。接著,將0.1315mol(14.21g)的對苯二胺(以下簡稱 PDA)加入前述溶液中。之後,反應5~7小時後即獲得固含量為15%的聚醯胺酸溶液。接著,將所述聚醯胺酸溶液在150℃下烘烤10分鐘後,在350℃之氮氣環境下進行醯亞胺化反應30~40分鐘,以獲得實施例2的絕緣膜,其中醯亞胺化比率為100%,且以低測定力測定儀進行厚度的測量,得到厚度約為12μm至22μm。 In a water bath (room temperature), 0.0438 mol (9.21 g) of MBCHA was weighed and dissolved in 425 g of NMP as a solvent. 0.1753 mol (51.57 g) of BPDA was added under a water bath. Next, 0.1315 mol (14.21 g) of p-phenylenediamine (hereinafter referred to as PDA) was added to the aforementioned solution. Thereafter, after 5 to 7 hours of the reaction, a polyamine solution having a solid content of 15% was obtained. Next, the polyamic acid solution was baked at 150 ° C for 10 minutes, and then subjected to a hydrazine imidization reaction under a nitrogen atmosphere of 350 ° C for 30 to 40 minutes to obtain an insulating film of Example 2, wherein The amination ratio was 100%, and the thickness was measured with a low force meter to obtain a thickness of about 12 μm to 22 μm.

實施例3Example 3

按照與實施例2相同的製造程序製造實施例3的絕緣膜,其差異之處僅在於:在實施例2中,MBCHA、PDA與BPDA的莫耳比為0.25:0.75:1,而在實施例3中,MBCHA、PDA與BPDA的莫耳比為0.5:0.5:1。另外,在實施例3中,聚醯胺酸溶液的固含量、醯亞胺化比率以及絕緣膜的厚度分別示於表1中。 The insulating film of Example 3 was fabricated in accordance with the same manufacturing procedure as in Example 2, except that in Example 2, the molar ratio of MBCHA, PDA and BPDA was 0.25:0.75:1, and in the example In 3, the molar ratio of MBCHA, PDA and BPDA is 0.5:0.5:1. Further, in Example 3, the solid content of the polyaminic acid solution, the oxime imidization ratio, and the thickness of the insulating film are shown in Table 1, respectively.

實施例4Example 4

按照與實施例2相同的製造程序製造實施例4的絕緣膜,其差異之處僅在於:在實施例2中,MBCHA、PDA與BPDA的莫耳比為0.25:0.75:1,而在實施例4中,MBCHA、PDA與BPDA的莫耳比為0.75:0.25:1。另外,在實施例4中,聚醯胺酸溶液的固含量、醯亞胺化比率以及絕緣膜的厚度分別示於表1中。 The insulating film of Example 4 was fabricated in accordance with the same manufacturing procedure as in Example 2, except that in Example 2, the molar ratio of MBCHA, PDA, and BPDA was 0.25:0.75:1, and in the examples. In 4, the molar ratio of MBCHA, PDA and BPDA is 0.75: 0.25:1. Further, in Example 4, the solid content of the polyaminic acid solution, the ruthenium iodide ratio, and the thickness of the insulating film are shown in Table 1, respectively.

實施例5Example 5

在水浴(室溫)下,秤取0.074mol(15.56g)的MBCHA以及0.074mol(16.81g)的4,4'-二氨基苯醯基苯胺(以下簡稱DABA)溶於作為溶劑之425g的NMP中。在水浴下加入0.148mol(42.64g)的BPDA。之後,在水浴下,反應5~7小時後即獲得固含量為15%的聚醯胺酸溶液。接著,將所述聚醯胺酸溶液在150℃下烘烤10分鐘後,在350℃之氮氣環境下進行醯亞胺化反應30~40分鐘,以獲得實施例5的絕緣膜,其中醯亞胺化比率為100%,且以低測定力測定儀進行厚度的測量,得到厚度約為12μm至22μm。 In a water bath (room temperature), 0.074 mol (15.56 g) of MBCHA and 0.074 mol (16.81 g) of 4,4'-diaminophenylphenylaniline (hereinafter referred to as DABA) were weighed and dissolved in 425 g of NMP as a solvent. in. 0.148 mol (42.64 g) of BPDA was added under a water bath. Thereafter, a polyamine solution having a solid content of 15% was obtained after 5 to 7 hours of reaction in a water bath. Next, the polyamic acid solution was baked at 150 ° C for 10 minutes, and then subjected to a hydrazine imidization reaction under a nitrogen atmosphere of 350 ° C for 30 to 40 minutes to obtain an insulating film of Example 5, wherein The amination ratio was 100%, and the thickness was measured with a low force meter to obtain a thickness of about 12 μm to 22 μm.

實施例6Example 6

按照與實施例5相同的製造程序製造實施例6的絕緣膜,其差異之處僅在於:在實施例5中,MBCHA、DABA與BPDA的莫耳比為0.5:0.5:1,而在實施例6中,MBCHA、DABA與BPDA的莫耳比為0.75:0.25:1。另外,在實施例6中,聚醯胺酸溶液的固含量、醯亞胺化比率以及絕緣膜的厚度分別示於表1中。 The insulating film of Example 6 was fabricated in accordance with the same manufacturing procedure as in Example 5, except that in Example 5, the molar ratio of MBCHA, DABA and BPDA was 0.5:0.5:1, and in the examples In 6, the molar ratio of MBCHA, DABA and BPDA was 0.75: 0.25:1. Further, in Example 6, the solid content of the polyaminic acid solution, the oxime imidization ratio, and the thickness of the insulating film are shown in Table 1, respectively.

實施例7Example 7

在水浴(室溫)下,秤取0.0806mol(16.95g)的MBCHA、0.0644mol(6.97g)的PDA以及0.0161mol(3.66g)的DABA溶於 作為溶劑之425g的NMP中。在水浴下加入0.1611mol(47.42g)的BPDA。之後,在水浴下,反應5~7小時後即獲得固含量為15%的聚醯胺酸溶液。接著,將所述聚醯胺酸溶液在150℃下烘烤10分鐘後,在350℃之氮氣環境下進行醯亞胺化反應30~40分鐘,以獲得實施例7的絕緣膜,其中醯亞胺化比率為100%,且以低測定力測定儀進行厚度的測量,得到厚度約為12μm至22μm。 0.0806 mol (16.95 g) of MBCHA, 0.0644 mol (6.97 g) of PDA and 0.0161 mol (3.66 g) of DABA were dissolved in a water bath (room temperature). 425 g of NMP as a solvent. 0.1611 mol (47.42 g) of BPDA was added under a water bath. Thereafter, a polyamine solution having a solid content of 15% was obtained after 5 to 7 hours of reaction in a water bath. Next, the polyamic acid solution was baked at 150 ° C for 10 minutes, and then subjected to hydrazine imidization reaction under a nitrogen atmosphere of 350 ° C for 30 to 40 minutes to obtain an insulating film of Example 7, wherein The amination ratio was 100%, and the thickness was measured with a low force meter to obtain a thickness of about 12 μm to 22 μm.

實施例8Example 8

按照與實施例7相同的製造程序製造實施例8的絕緣膜,其差異之處僅在於:在實施例7中,MBCHA、PDA、DABA與BPDA的莫耳比為0.5:0.4:0.1:1,而在實施例8中,MBCHA、PDA、DABA與BPDA的莫耳比為0.5:0.35:0.15:1。另外,在實施例8中,聚醯胺酸溶液的固含量、醯亞胺化比率以及絕緣膜的厚度分別示於表1中。 The insulating film of Example 8 was fabricated in accordance with the same manufacturing procedure as in Example 7, except that in Example 7, the molar ratio of MBCHA, PDA, DABA, and BPDA was 0.5:0.4:0.1:1. In Example 8, the molar ratio of MBCHA, PDA, DABA, and BPDA was 0.5:0.35:0.15:1. Further, in Example 8, the solid content of the polyaminic acid solution, the oxime imidization ratio, and the thickness of the insulating film are shown in Table 1, respectively.

實施例9Example 9

按照與實施例7相同的製造程序製造實施例9的絕緣膜,其差異之處僅在於:在實施例7中,MBCHA、PDA、DABA與BPDA的莫耳比為0.5:0.4:0.1:1,而在實施例9中,MBCHA、PDA、DABA與BPDA的莫耳比為0.5:0.3:0.2:1。另外,在實施例9中,聚醯胺酸溶液的固含量、醯亞胺化比率以及絕緣膜的厚度分別示於表1中。 The insulating film of Example 9 was fabricated in accordance with the same manufacturing procedure as in Example 7, except that in Example 7, the molar ratio of MBCHA, PDA, DABA, and BPDA was 0.5:0.4:0.1:1. In Example 9, the molar ratio of MBCHA, PDA, DABA, and BPDA was 0.5:0.3:0.2:1. Further, in Example 9, the solid content of the polyaminic acid solution, the oxime imidization ratio, and the thickness of the insulating film are shown in Table 1, respectively.

實施例10Example 10

在水浴(室溫)下,秤取0.2334mol(50.90g)的均苯四甲酸二酐(以下簡稱PMDA)溶於作為溶劑之200g的NMP中,以及秤取0.2334mol(49.10g)的MBCHA溶於作為溶劑之200g的NMP中。接著,將PMDA溶液與MBCHA溶液均勻混合後,在水浴下,反應10~12小時後即獲得固含量為20%的聚醯胺酸溶液。接著,將所述聚醯胺酸溶液在150℃下烘烤10分鐘後,在350℃之氮氣環境下進行醯亞胺化反應30~40分鐘,以獲得實施例10的絕緣膜,其中醯亞胺化比率為100%,且以低測定力測定儀進行厚度的測量,得到厚度約為12μm至22μm。 In a water bath (room temperature), 0.2334 mol (50.90 g) of pyromellitic dianhydride (hereinafter abbreviated as PMDA) was weighed and dissolved in 200 g of NMP as a solvent, and 0.2334 mol (49.10 g) of MBCHA was weighed and dissolved. In 200 g of NMP as a solvent. Next, the PMDA solution was uniformly mixed with the MBCHA solution, and then, after 10 to 12 hours of reaction in a water bath, a polyamine solution having a solid content of 20% was obtained. Next, the polyamic acid solution was baked at 150 ° C for 10 minutes, and then subjected to a hydrazine imidization reaction under a nitrogen atmosphere of 350 ° C for 30 to 40 minutes to obtain an insulating film of Example 10, wherein The amination ratio was 100%, and the thickness was measured with a low force meter to obtain a thickness of about 12 μm to 22 μm.

實施例11Example 11

按照與實施例10相同的製造程序製造實施例11的絕緣膜,其差異之處僅在於:在實施例10中,所使用的二酐單體為PMDA,而在實施例11中,所使用的二酐單體為4,4'-氧双鄰苯二甲酸酐(以下簡稱OPDA)。另外,在實施例11中,聚醯胺酸溶液的固含量、醯亞胺化比率以及絕緣膜的厚度分別示於表1中。 The insulating film of Example 11 was produced in the same manufacturing procedure as in Example 10 except that in Example 10, the dianhydride monomer used was PMDA, and in Example 11, the used film was used. The dianhydride monomer is 4,4'-oxydiphthalic anhydride (hereinafter referred to as OPDA). Further, in Example 11, the solid content of the polyaminic acid solution, the oxime imidization ratio, and the thickness of the insulating film are shown in Table 1, respectively.

實施例12Example 12

在水浴(室溫)下,秤取0.1723mol(36.25g)的MBCHA以及0.0191mol(4.35g)的DABA溶於作為溶劑之400g的NMP中。在水浴下,加入0.1914mol(59.40g)的OPDA。之後,在水浴 下,反應5~7小時後即獲得固含量為20%的聚醯胺酸溶液。接著,將所述聚醯胺酸溶液在150℃下烘烤10分鐘後,在350℃之氮氣環境下進行醯亞胺化反應30~40分鐘,以獲得實施例12的絕緣膜,其中醯亞胺化比率為100%,且以低測定力測定儀進行厚度的測量,得到厚度約為12μm至22μm。 In a water bath (room temperature), 0.1723 mol (36.25 g) of MBCHA and 0.0191 mol (4.35 g) of DABA were weighed and dissolved in 400 g of NMP as a solvent. Under a water bath, 0.1914 mol (59.40 g) of OPDA was added. After that, in the water bath Next, after 5 to 7 hours of reaction, a polyamine solution having a solid content of 20% was obtained. Next, after the polyamic acid solution was baked at 150 ° C for 10 minutes, the hydrazide reaction was carried out in a nitrogen atmosphere at 350 ° C for 30 to 40 minutes to obtain an insulating film of Example 12, wherein The amination ratio was 100%, and the thickness was measured with a low force meter to obtain a thickness of about 12 μm to 22 μm.

比較例1Comparative example 1

按照與實施例1相同的製造程序製造比較例1的絕緣膜,其差異之處僅在於:在實施例1中,所使用的二胺單體為MBCHA,而在比較例1中,所使用的二胺單體為DABA。另外,在比較例1中,聚醯胺酸溶液的固含量、醯亞胺化比率以及絕緣膜的厚度分別示於表1中。 The insulating film of Comparative Example 1 was produced in the same manufacturing procedure as in Example 1, except that in Example 1, the diamine monomer used was MBCHA, and in Comparative Example 1, the used The diamine monomer is DABA. Further, in Comparative Example 1, the solid content of the polyaminic acid solution, the ruthenium imidization ratio, and the thickness of the insulating film are shown in Table 1, respectively.

之後,分別對實施例1至實施例10及比較例1的絕緣膜進行介電常數、介電損耗、熱膨脹係數(coefficient of thermal expansion,CTE)、玻璃轉移溫度及熱裂解溫度的測定。前述測定的說明如下,且測定的結果顯示於表2中。 Thereafter, the insulating films of Examples 1 to 10 and Comparative Example 1 were each measured for dielectric constant, dielectric loss, coefficient of thermal expansion (CTE), glass transition temperature, and thermal cracking temperature. The description of the above measurement is as follows, and the results of the measurement are shown in Table 2.

〈介電常數、介電損耗的測定〉<Measurement of dielectric constant and dielectric loss>

首先,將實施例1至實施例10及比較例1的絕緣膜分別製作成長寬尺寸為7cm×10cm的膜材。接著,將該些膜材置於烘箱中以130℃的溫度烘烤2小時後,將其放置於大氣環境下五天。之後,使用介電常數測定裝置(羅德史瓦茲公司(ROHDE & SCHWARZ)製造,設備名為R&S®ZVB20V Vector Network Analyzer)對該些膜材的介電常數及介電損耗進行量測,其中量測頻率為10GHz。在業界中,在軟性銅箔基板的應用中,絕緣膜的介電常數為3.2以下符合產品需求,且數值越低表示介電性質越好;以及絕緣膜的介電損耗為0.01以下符合產品需求,且數值越低表示介電性質越好。 First, the insulating films of Examples 1 to 10 and Comparative Example 1 were each formed into a film having a width of 7 cm × 10 cm. Next, the films were baked in an oven at a temperature of 130 ° C for 2 hours, and then placed in an atmosphere for five days. Thereafter, the dielectric constant and dielectric loss of the films were measured using a dielectric constant measuring device (manufactured by ROHDE & SCHWARZ under the name R&S®ZVB20V Vector Network Analyzer), wherein The measurement frequency is 10 GHz. In the industry, in the application of the flexible copper foil substrate, the dielectric constant of the insulating film is 3.2 or less to meet the product requirements, and the lower the value, the better the dielectric property; and the dielectric loss of the insulating film is 0.01 or less to meet the product requirements. And the lower the value, the better the dielectric properties.

〈熱膨脹係數的測定〉<Measurement of Thermal Expansion Coefficient>

首先,將實施例1至實施例10及比較例1的絕緣膜分別製作成長寬尺寸為2mm×30mm的膜材。接著,使用熱機械分析儀(日本精工電子有限公司(Seiko Instrument Inc.)製造,設備名為EXSTAR 6000),在氮氣環境以及升溫速度設定為10℃/min 的條件下,將該些膜材從30℃升溫至450℃,並求出50℃至200℃之間的尺寸變化量的平均值,以獲得熱膨脹係數。在業界中,在軟性銅箔基板的應用中,熱膨脹係數為30ppm/℃以下即可視為與銅箔的熱膨脹係數(17ppm/℃)相近。 First, the insulating films of Examples 1 to 10 and Comparative Example 1 were each formed into a film having a width of 2 mm × 30 mm. Next, using a thermomechanical analyzer (manufactured by Seiko Instrument Inc., the device name is EXSTAR 6000), the nitrogen gas atmosphere and the temperature increase rate were set to 10 ° C / min. The film was heated from 30 ° C to 450 ° C under the conditions, and an average value of the dimensional change amount between 50 ° C and 200 ° C was determined to obtain a thermal expansion coefficient. In the industry, in the application of a flexible copper foil substrate, a thermal expansion coefficient of 30 ppm/° C. or less is considered to be similar to a thermal expansion coefficient (17 ppm/° C.) of the copper foil.

〈玻璃轉移溫度的測定〉<Measurement of glass transition temperature>

首先,將實施例1至實施例10及比較例1的絕緣膜分別製作成長寬尺寸為5mm×40mm的膜材。接著,使用動態機械分析儀(日本精工電子有限公司(Seiko Instrument Inc.)製造,設備名為EXSTAR 6100),在氮氣環境以及升溫速度設定為10℃/min的條件下,將該些膜材從30℃升溫至450℃,並將損失正切(tanδ)變化率達到最大時所量測到的溫度作為玻璃轉移溫度。一般而言,當絕緣膜應用至軟性銅箔基板時,會透過焊錫測試(Solder Test)來測試其耐銲錫的程度,而焊錫測試的測試條件通常在300℃下維持30秒。因此,在軟性銅箔基板的應用中,絕緣膜的玻璃轉移溫度較佳為300℃以上,且數值越大,表示絕緣膜的熱穩定性越佳。 First, the insulating films of Examples 1 to 10 and Comparative Example 1 were each formed into a film having a width of 5 mm × 40 mm. Next, using a dynamic mechanical analyzer (manufactured by Seiko Instrument Inc., the device name is EXSTAR 6100), the membranes were removed from the nitrogen atmosphere and the temperature increase rate was set to 10 ° C/min. The temperature was raised to 450 ° C at 30 ° C, and the temperature measured when the loss tangent (tan δ) change rate was maximized was taken as the glass transition temperature. In general, when an insulating film is applied to a flexible copper foil substrate, the degree of solder resistance is tested by a Solder Test, and the test condition of the solder test is usually maintained at 300 ° C for 30 seconds. Therefore, in the application of the flexible copper foil substrate, the glass transition temperature of the insulating film is preferably 300 ° C or higher, and the larger the value, the better the thermal stability of the insulating film.

〈熱裂解溫度的測定〉<Measurement of Thermal Cracking Temperature>

首先,分別秤取0.5克至0.8克的實施例1至實施例10及比較例1的絕緣膜,以作為測試膜材。接著,使用熱重損失分析儀(日本精工電子有限公司(Seiko Instrument Inc.)製造,設 備名為EXSTAR 6000),在氮氣環境以及升溫速度設定為10℃/min的條件下,將該些膜材從30℃升溫至600℃,並將膜材損失5%重量時所量測到的溫度作為熱裂解溫度。在業界中,在軟性銅箔基板的應用中,絕緣膜的熱裂解溫度一般至少需要達到400℃以上,且數值越大,表示絕緣膜的熱穩定性越佳。 First, 0.5 g to 0.8 g of the insulating films of Examples 1 to 10 and Comparative Example 1 were weighed separately to obtain a test film. Next, using a thermogravimetric loss analyzer (Seiko Instrument Inc., manufactured by Seiko Instrument Inc.) Prepared as EXSTAR 6000), measured in a nitrogen atmosphere and a temperature increase rate of 10 ° C / min, the temperature of the film from 30 ° C to 600 ° C, and measured when the film lost 5% by weight The temperature is taken as the thermal cracking temperature. In the industry, in the application of a flexible copper foil substrate, the thermal cracking temperature of the insulating film generally needs to be at least 400 ° C or more, and the larger the value, the better the thermal stability of the insulating film.

由表2可知,與比較例1之未含有衍生自4,4'-二氨基二環己基甲烷的二價有機基的絕緣膜相比,實施例1至實施例10之含有衍生自4,4'-二氨基二環己基甲烷的二價有機基的絕緣膜皆具有較低的介電常數及介電損耗。另外,由表2可知,實施例1至實施例10的絕緣膜的玻璃轉移溫度介於262℃至352℃之間且熱裂解溫度介於464℃至495℃之間,此顯示實施例1至實施例10的絕緣膜具有良好的熱穩定性。 As is clear from Table 2, the contents of Examples 1 to 10 were derived from 4, 4 as compared with the insulating film of Comparative Example 1 which did not contain a divalent organic group derived from 4,4'-diaminodicyclohexylmethane. The divalent organic-based insulating film of '-diaminodicyclohexylmethane has a low dielectric constant and dielectric loss. In addition, as is clear from Table 2, the glass transition temperatures of the insulating films of Examples 1 to 10 were between 262 ° C and 352 ° C and the thermal cracking temperature was between 464 ° C and 495 ° C, which shows Example 1 to The insulating film of Example 10 had good thermal stability.

另外,由表2可知,與實施例1的絕緣膜相比,實施例2至實施例9之更含有衍生自對苯二胺及/或4,4'-二胺基苯醯基苯胺的二價有機基的絕緣膜皆具有較低的熱膨脹係數。更進一步而言,由表2可知,實施例7至實施例9的絕緣膜的介電常數介於3.15至3.17之間、介電損耗介於0.052至0.063之間、熱膨脹係數介於28.8ppm/℃至31.5ppm/℃之間、玻璃轉移溫度介於285℃至296℃之間且熱裂解溫度介於477℃至489℃之間,此顯示實施例7至實施例9的絕緣膜同時具有低介電常數、低介電損耗、與銅箔相近的熱膨脹係數及高熱穩定性的性質。 Further, as is clear from Table 2, in comparison with the insulating film of Example 1, Examples 2 to 9 further contained two derived from p-phenylenediamine and/or 4,4'-diaminophenylhydrazinoanilide. The organic film-based insulating film has a low coefficient of thermal expansion. Furthermore, as can be seen from Table 2, the insulating films of Examples 7 to 9 have a dielectric constant between 3.15 and 3.17, a dielectric loss between 0.052 and 0.063, and a thermal expansion coefficient of 28.8 ppm/ Between °C and 31.5ppm/°C, the glass transition temperature is between 285°C and 296°C, and the thermal cracking temperature is between 477°C and 489°C, which shows that the insulating films of Examples 7 to 9 have both low Dielectric constant, low dielectric loss, thermal expansion coefficient similar to copper foil, and high thermal stability.

另外,由表2可知,與實施例2及實施例3的絕緣膜相比,實施例5及實施例6的絕緣膜皆具有較低的熱膨脹係數,此顯示結構中含有衍生自4,4'-二胺基苯醯基苯胺的二價有機基對於熱膨脹係數的調控能力優於結構中含有衍生自對苯二胺的二價有機基。 Further, as is clear from Table 2, the insulating films of Examples 5 and 6 have lower coefficients of thermal expansion than the insulating films of Examples 2 and 3, and the display structure contains derivatives derived from 4, 4'. The divalent organic group of the diaminophenyl phenylaniline has a better ability to regulate the coefficient of thermal expansion than the structure containing a divalent organic group derived from p-phenylenediamine.

另外,雖然未對實施例11~12的絕緣膜進行前述性質的測定,但根據實施例1至實施例10及比較例1的絕緣膜的測定結果,領域中具有通常知識者應理解實施例11~12的絕緣膜也具有良好的介電性質,以及相對於實施例11的絕緣膜,實施例12的聚醯亞胺膜具有較低的熱膨脹係數。 Further, although the above properties were not measured for the insulating films of Examples 11 to 12, the results of the measurement of the insulating films of Examples 1 to 10 and Comparative Example 1 should be understood by those having ordinary knowledge in the field. The insulating film of ~12 also had good dielectric properties, and the polyimide film of Example 12 had a lower coefficient of thermal expansion than the insulating film of Example 11.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的 精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art without departing from the invention. In the spirit and scope, the scope of protection of the present invention is subject to the definition of the appended patent application.

Claims (10)

一種聚合物,包括至少25mol%之以式1表示的重複單元: ,其中 Ar為衍生自含有芳香族基的四羧酸二酐的四價有機基;以及A為衍生自含有環己烷基的二胺的二價有機基,且所述二價有機基的碳數為8至18,其中以式1表示的重複單元的數目在10至2000之間。 A polymer comprising at least 25 mol% of the repeating unit represented by Formula 1: Wherein Ar is a tetravalent organic group derived from a tetracarboxylic dianhydride containing an aromatic group; and A is a divalent organic group derived from a diamine containing a cyclohexane group, and the carbon of the divalent organic group The number is 8 to 18, and the number of repeating units represented by Formula 1 is between 10 and 2,000. 如申請專利範圍第1項所述的聚合物,更包括以式3表示的重複單元: ,其中Φ包括或 Φ包括The polymer according to claim 1, further comprising a repeating unit represented by Formula 3: Where Φ includes Or Φ includes versus . 如申請專利範圍第1項或第2項所述的聚合物,其中Ar 包括中的至少一者,且B包括單鍵、-O-、 -CH2-、-C(CH3)2-、-SO2-或-CO-。 The polymer according to claim 1 or 2, wherein Ar includes and At least one of, and B includes a single bond, -O-, -CH 2 -, -C(CH 3 ) 2 -, -SO 2 - or -CO-. 如申請專利範圍第1項所述的聚合物,其中A包括 中的至少一者。 The polymer of claim 1, wherein A includes , , , and At least one of them. 如申請專利範圍第2項所述的聚合物,其中Φ包括 ,且的莫耳比為9:1至1:9。 The polymer of claim 2, wherein Φ comprises and And versus The molar ratio is 9:1 to 1:9. 一種絕緣膜,包括如申請專利範圍第1項所述的聚合物。 An insulating film comprising the polymer of claim 1 of the patent application. 如申請專利範圍第6項所述的絕緣膜,其中所述絕緣膜的介電常數為2.8至3.5。 The insulating film according to claim 6, wherein the insulating film has a dielectric constant of 2.8 to 3.5. 如申請專利範圍第6項所述的絕緣膜,其中所述絕緣膜的介電損耗為0.005至0.014。 The insulating film according to claim 6, wherein the insulating film has a dielectric loss of 0.005 to 0.014. 一種軟性銅箔基板,包括:一銅箔;以及一絕緣膜,配置在所述銅箔上,其中所述絕緣膜係如申請專利範圍第6項所述的絕緣膜。 A flexible copper foil substrate comprising: a copper foil; and an insulating film disposed on the copper foil, wherein the insulating film is an insulating film according to claim 6 of the patent application. 如申請專利範圍第9項所述的軟性銅箔基板,更包括一黏著層,配置於所述銅箔與所述絕緣膜之間。 The flexible copper foil substrate according to claim 9, further comprising an adhesive layer disposed between the copper foil and the insulating film.
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