TWI520237B - Methods and apparatuses for non-planar chip assembly - Google Patents

Description

Method and apparatus for non-planar wafer assembly

The present invention relates generally to assembly procedures for microdevices, and more particularly to assembly of three-dimensional curved elastic device wafers.

The integrated circuit industry relies on "planar" techniques to reduce the feature size limitations of photolithography methods and develop according to Moore's law, because when the numerical aperture is increased to define more subtle features in photolithography, the focal length The depth will be reduced. However, device planar surfaces based on this planar technology may limit the geometrical conditions of interaction and/or interconnection between these devices or with one or more external systems.

Therefore, conventional planar techniques may not provide devices with non-planar geometry to minimize the complexity of interaction between devices or with external systems.

In one embodiment, an assembly method for a non-planar surface sheet of a non-planar (eg, spherical-like) structure, such as a semiconductor wafer (or wafer stack), can include depositing a stressed film on a thin semiconductor substrate of a thin wafer. One side (or both sides) for small deformation of the wafer. The stressed film can be deposited to have a stressed film pattern (eg, by utilizing photolithography and etching or lift-off processes) for small deformations with controlled shapes. Alternatively, the slots can be created on a thin wafer and the stressed film can be deposited such that the large shape of the wafer becomes conductive.

In another embodiment, a "slot" can be produced on a thin wafer, and the wafer can be bonded to a separate block of a confinement element (eg, an annular sheet or another wafer) Body to make the larger shape of the wafer work. "Slot" may be formed by a continuous opening having a varying width that extends from a location within the wafer to the edge of the wafer and creates new straight or curved edges and sidewalls for localized structure, and when localized Some lateral displacement is allowed when the structure is subjected to bending or deformation stresses. The bonding described above can be mechanically limited and selectively provide electrical connection between the component bonding blocks that span the slots (including the wafer). Combining a slot having a stressed film with a restraining element can form a curved surface for the wafer. Two or more slotted wafer blocks may be joined to have mutual or multiple confinements to hold the curved block in place. In some embodiments, the resulting curved structure can be applied to new structures of three-dimensional interconnections of brain-computer interfaces (eg, retinal prostheses) or signal processing units.

One embodiment of the present invention includes a method and apparatus for assembly of a non-planar device based on a curved wafer. A plurality of slots can be created to act as longitudinal openings in the wafer to reduce bending stress and thereby increase the allowable angle of deformation of the wafer. The wafer can be deformed through the slot to a desired deformation within the allowable angle of deformation. A retention limit can be provided on at least a portion of the wafer to maintain the bend in accordance with the desired deformation.

In another embodiment, the curved wafer can comprise a plurality of wafers. A wafer, such as the first wafer in the wafer, can be bent into a desired deformation. Another wafer, such as a second wafer in the wafer, can be variably formed to conform to the desired deformation of the first wafer described above. The deformed wafers can be bonded to each other such that a continuous block of one wafer intersects the slot of the other wafer to provide a retention constraint between the wafers to maintain the wafers in the desired deformation.

In still another embodiment, an assembly apparatus for a non-planar curved wafer can include a set of extrusion units, a support unit, and a control unit. The above extrusion unit may have a first surface, and the first surface is curved according to a desired curvature. The bracket unit may have a second surface that is curved to conform to the desired curvature. The control unit can control the movement of the pressing unit and the bracket unit. The extrusion unit may be configured to deform the wafer onto the first surface to form the desired curvature. The bracket unit may be configured to deform the fixed structure on the second surface in accordance with the desired curvature. The control unit may be configured to allow the pressing unit and the holder unit to be coupled to the fixing structure between the first surface and the second surface by moving the pressing unit. The bonding described above provides retention constraints to the wafer and the mounting structure to maintain bending.

Other features of the present invention will be apparent from the following description and appended claims.

Non-planar (e.g., quasi-spherical) surface sheets of retinal wafer assembly procedures or (integrated) semiconductor wafers and methods therefor will be described herein. In the following description, numerous specific details are set forth. However, it should be understood by those of ordinary skill in the art that the embodiments of the invention may be practiced without these specific details. In addition, well-known components, structures, and techniques have not been shown in detail to avoid obscuring the technical aspects of the present invention.

The "an embodiment" referred to in the specification means that a specific feature, structure or characteristic described in connection with the embodiment can be included in at least one of the present invention. In the examples. The appearances of the various embodiments in the various embodiments are not necessarily all referring to the same embodiment.

In an embodiment, an integrated active component, a transistor circuit, a transducer, or a microsystem having a non-planar surface is advantageous to change the interaction between the devices, subsystems, interconnected geometric conditions, or The geometrical conditions of interaction and interconnection between one or more external systems. An integrated device with a non-planar shape or geometry enables a new computing architecture (eg, a spherical geometry is a "round-table forum" in three dimensions that interacts, communicates, and interconnects the operational elements on the surface and the ball The communication/interactive link optimization in the body is available. It has new methods for joining electrons or photons to the general biological nervous system (for example, a spherical surface is often encountered in a brain-machine interface).

For example, in the case of an artificial retina, the interface between the prosthesis device and the retina at the posterior end of the human eye is a spherical surface having a radius of curvature of about 12.5 millimeters (mm). In order to minimize the complexity of the interconnection through the eyeball, it is preferred to place the microelectrodes and electronic circuits as interfaces together and abut against the surface of the retinal neurons. This description will teach a method of forming a typical rigid semiconductor electronic device into a non-planar shape (here, for example, a spherical surface).

1A through 1D are schematic diagrams showing exemplary embodiments of non-planar components for an elastic wafer. The assembly 100A of Figure A can display a quasi-spherical shaped artificial retinal prosthetic device that conforms to the shape of the retina within the eye to allow the device to be placed against the surface of the retinal neuron. Shape conformance can be reduced The lesser electrical neurons require electrical excitation thresholds and increase the granularity of the interface between the device (eg, through the electrodes) and the retinal neurons.

In one embodiment, assembly 100A can include an elastomeric wafer 103 having photosensors, electrodes, drive circuitry, and the like. The elastic wafer 103 can be mechanically constrained to be bent into a desired shape or deformed by the fixed structure 101. For example, the fixed structure 101 may comprise an elastic polymeric material having a shape having a desired curvature or deformed to have a desired curvature. The elastic wafer 103 can be bonded or fixed to the fixed structure 101 to remain curved into a desired shape.

Referring now to Figure B, assembly 100B can be a relatively spherical component that includes multiple layers of elastomeric wafers. For example, the elastic wafers 107, 109 can be deformed to facilitate communication between the surface elements of the elastic wafers 107, 109. The elastic wafers 107, 109 can be arranged or arranged to face each other to establish a communication path, such as the communication path 111, using light beams, wires or other feasible connections. In some embodiments, the communication path between different curved wafers (eg, fixed structure 105, elastic wafer 107) facing in the same direction may be based on through silicon vias (TSVs). The through-through structure can direct certain pads of the thin-film circuit wafer through its thin substrate to the back side of the thin-film circuit (eg, from the front side), whereby the plurality of wafers can be stacked and bonded together . A plurality of wafers, such as the fixed structure 105, the elastic wafer 107, can remain curved within the assembly 100B based on mutual constraints between the wafers.

The non-planar geometry of component 100B can be linked or otherwise feasible A planar feature-based computing architecture is used. For example, the spherical geometry in a spherical component can be a "round-table forum" in three-dimensional geometry for interaction, communication, and communication between operational components (or circuits of flexible wafers) on the surface of a spherical component. Interconnect and communication/interactive link optimization for components located within the spherical component.

Referring now to Figure C, the non-planar artificial retinal assembly can be implanted for sub-retina in the sub-retina. The artificial retina may include an elastic wafer 117 that is in intimate contact with the retina 121 of the eyeball 113. The elastic wafer 117 can be engaged with the fixed structure 115 to remain curved to conform to the shape of the eye 113. In one embodiment, both the fixed structure 115 and the elastic wafer 117 may comprise a transparent material to allow light to pass therethrough.

Alternatively, in the first D diagram, the non-planar artificial retinal component can be implanted for the eyeball 113 in an epi-retina manner. The artificial retina may include an elastic wafer 119 that is in close contact with the retina 121 from the inside of the eye 113. In addition, the artificial retina may include a fixation structure 123 to provide mechanical restraint for the elastic wafer 119 to remain curved to conform to the shape of the eye 113. The non-planar artificial retinal component can be resilient, whereby it can be deformed depending on the desired configuration or shape.

Figure 2A is a block diagram showing a cross-sectional view of an elastic structure (or device) deposited with a stressed thin film. In an embodiment, the structure 200 can include a thin component layer 205 sandwiched between a barrier layer 203 and the polymer layer 210. The element layer 205 can be based on a thin metal oxide semiconductor for medical implantation (MOS, Metal Oxide) The semiconductor is covered by a barrier layer 203 and a biocompatible polymer layer 210 to protect it from component corrosion and/or poisoning living tissue. The structure 200A can be thin enough to curl (or bend, deform) depending on the stress or tensile force from the stressed film layer 207.

In some embodiments, a stressed film, such as stressed film layer 207, may be deposited on one or both sides of the thin structure or wafer to achieve the desired deformation of the wafer (eg, bending at an angle). For example, the stressed film can be pre-compressed or pre-stretched to apply a bending force in different directions. The stressed film can be selectively patterned during the process (eg, by photolithography and etching processes to form a ring or stripe shape) to produce curved shapes for various thin structures (eg, in a wavy manner or other feasible form). The structure 200 may curl when it is released from a thick wafer carrier 209 (or a handle wafer) attached via the adhesive 211.

Second B is a schematic diagram showing a non-planar device that is deformed in a wavy manner in accordance with the embodiments described herein. For example, the non-flat area body circuit device 200B can include an elastic thin structure 213 that is curved in a wavy manner. The stressed films 215, 217 may be formed (eg, through a pattern mask) on both sides of the elastic thin structure 213 to form a specific (or pre-specified) pattern (eg, stripe, zigzag, or other feasible pattern, etc.) for The elastic thin structure 213 is bent into a desired deformation, such as a wavy manner. In one embodiment, the stressed film 215 may be pre-compressed or may be compressible. Alternatively, the stressed film can be pre-stretched. The stressed films 215, 217 can provide displacement constraints or forces, such as bulky residual films. Force to bend the elastic thin structure 213 into a desired deformation. The non-planar device can comprise a combination of a pre-compressed film, a pre-stretched film, or a compressible film formed in a specified pattern to provide a stress distribution in accordance with a specified pattern to achieve the desired deformation of the device.

According to an embodiment, the desired deformation may comprise a wafer bending curvature. For example, if the elastic wafer is to be deformed from a planar disk to a non-planar spherical sheet, the amount of reduction required for the outer circumference of the elastic wafer can be calculated. In one embodiment, when the displacement from the bending of the substrate is much smaller than the thickness of the wafer (eg, the thickness of the element layer 205), the curvature of the wafer caused by the deposited film having residual film stress (on a relatively thick substrate) It can be estimated based on the "Stoney equation" (or approximate equation). For large stresses on thin wafers, numerical methods can be used to calculate the curvature of the wafer when the displacement can easily be greater than the thickness of the substrate due to two-dimensional constraints, without the need to apply an approximation equation. Overestimate the displacement.

3A through 3C are schematic diagrams showing exemplary non-planar wafers based on slots, in accordance with embodiments described herein. For example, the schematic 300A can include a thin wafer 305 of thin grains or wafers and exaggerated slots 301, 303 having a stress relief fillet at the tip 307 of the slot 301. When the thin wafer 305 is deformed, both sides of the slot 301 may come into contact or close. The thin wafer 305 can be pre-pressurized on the carrier substrate during the process and becomes curved when released from the carrier substrate.

In an embodiment, the thin wafer 305 may comprise a plurality (one or a circular wafer of radial slots extending from the center of the circular wafer in a fan/wedge shape outward (in a straight path or in a curved path, a helical path, a sawtooth path, or other feasible path) ) while the remaining edges are removed. The radial slots may extend from the edge of the thin wafer 305 and terminate at the tip end of the slot (e.g., a fine tip having a width of about 1 micrometer (μm)) before reaching the center of the thin wafer 305 (or a distance from the center of the thin wafer 305). For example, the tip 307 of the slot 301. In one embodiment, the tips of the slots can be placed in a thin wafer to accommodate, for example, resolution limitations of the micro-process and/or enhancement of stress intensity factors at the tip of the slot caused by wafer deformation. The corners around the tip end of the slot, such as the tip end 307 of the slot 301, can be rounded to reduce stress concentrations associated with sharp corners and to spread the stresses on the corners of the circular slot when the wafer is deformed or bent.

The slot can be formed by removing (or cutting, tearing) a portion of the narrow channel region of the wafer (eg, a cut-out, a longitudinal opening, or a narrow opening), such as the slot 301 of the thin wafer 305, such as through a micro-process. Deep reactive ion etching. The slots reduce the deformation stress of the wafer, such as tangential in-plane stress, and increase the allowable deformation angle of the wafer. In one embodiment, the slot may cut direct communication between circuit components across the slot in the wafer, so jumpers may be required around the slot (through the bond pad to limit the soft structure (constraining) Flex) or another constraining chip (described below) or a longer power rail and data bus to distribute power, ground and signal lines.

Figure 3B shows a laminated thin disc-shaped wafer structure made of a slotted and stressed film that is bent or bent into a spherical sheet and released from the wafer carrier used during the manufacturing process. It remains curved afterwards. The fixed structure can be joined across the slots in the wafer structure to prevent the curved wafer from relaxing back to its original planar shape. The stressed film provides additional bending force to help constrain the wafer to remain under the desired deformation. Although the bending effect caused by the stressed film on the thin structure having one or more slots can be greatly increased, the bending is large (for example, the edge displacement of 70-90 micrometers caused by bending a 30 micron thick retinal wafer) May be related to two-dimensional restrictions. The deformation angle can be measured, for example, by the number of micrometers of the edge displacement. Therefore, a relatively thick film with a large amount of stress (e.g., external bending) may be required to achieve the desired large curvature.

The third C diagram shows an exemplary mechanism for bending a planar wafer. When a planar disk of diameter "d" (for example comprising a planar wafer) is bent into a radius of curvature "R" 309, the angle 311 extending from the center of the radius to the end of the diameter line of the disk is 2θ, where 2R*θ= d. The original circumference of the disc is S = π * d = 2πR * θ; however, if the disc is deformed into a spherical sheet, the deformed circumference 313 should be S' = 2πR * Sin (θ). Since θ>Sin(θ) when θ>0, the disk will experience in-plane tangential stresses for bending, because there is an excess in the radius r less than or equal to R. The circumference is 2πr*[θ-Sin(θ)]. The slot removes the excess portion in an appropriate amount whereby the two sides of the slot are placed together when the disk is deformed into a spherical shape. The principle that this removal of some excess material from a planar wafer to become a curved non-planar shape can be applied to certain embodiments described herein. in.

4A to 4B are schematic diagrams showing an exemplary embodiment of a thin wafer in which a flexible structure is assembled. The outline 400A can include a fixed structure 401 and a thin wafer 403. In one embodiment, the fixed structure 401 can be a ring-shaped soft structure (eg, formed from a flexible structure "cable"). The soft structure may comprise a polymer (e.g., polyamide) that may be transparent or translucent, deformable, and/or moldable. In some embodiments, the flexible structure can be formed into an entire block or shaped into a different shape as desired. The thin wafer 403 can be based on a thin wafer/die with slits for large deformation. In one embodiment, the thin wafer 403 may comprise an elastomeric material having four slits (or slots), such as slots 405, to increase the elasticity of the wafer for large deformation. The fixed structure 401 can be bonded to the elastic thin wafer 403 to maintain the wafer in a bent state. The number and/or pattern of slots formed in the thin wafer (e.g., 2, 12 or other feasible number of slots) may vary depending on the desired deformation in the wafer.

Referring now to FIG. 4B, assembly 400B can include a curved thin wafer 403 that is joined to the fixed structure 401 by, for example, bond pads 407. The mechanical restriction from the fixed structure 401 (or soft structure) allows the thin wafer 403 to remain curved without relaxing back to its original flat state. The fixed structure 401 can comprise metal lines and metal bond pads of suitable thickness (eg, about 10 microns). The thin wafer 403 can include mating (at corresponding locations) bond pads that are intended to engage with corresponding metal bond pads of the fixed structure 401. Film bonding (e.g., gold bonding to gold) can be formed when the above metal is subjected to pressure and is elevated in temperature (generally controlled in the range of 150 degrees C to 450 degrees C). film Bonding can also be used as an electrical link for data transfer and power distribution.

Fifth to fifth F diagrams are block diagrams showing exemplary sequences of assembly (or bonding) procedures for non-planar elastic devices. For example, a non-planar elastic device can be manufactured or produced based on a curved thin wafer/die bonded through a mating pad and an elastic device. In the sequence 500A of FIG. 5A, in an embodiment, the bracket unit 501 can include a transparent bracket having a concave shape such as a recess 503 for receiving a soft structure or a fixed structure. The recess 503 can accommodate a soft structural material (e.g., a polymer) that can be molded or formed.

In the sequence 500B of Figure 5B, the flexible structure 507 can be tooled within the recess 503. In one embodiment, the extrusion unit 505 and the bracket unit 501 can be placed together and simultaneously apply pressure/heat to form the flexible structure 507 into a curved shape. The extrusion unit 505 and the bracket unit 501 can be shaped to have mating surfaces that have a common or compatible radius of curvature. The flexible structure 507 can be sandwiched between a pressing unit 505 having a spherical surface (for example, an upper unit) and a bracket unit 501 (for example, a lower unit) having a matching spherical recess. In one embodiment, the flexible structure 507 can comprise a polymeric ring that is vacuumed (having a vacuum hole in the surface of the corresponding zone and having a vacuum channel in the stent unit 501) or an electrostatic force (eg, using an electrostatic adsorption disk (electrostatic) Chuck)) Keep it. In the sequence 500C of Figure 5C, the extrusion unit 505 can be moved to separate from the bracket unit 501 and exit the flexible structure 507 to maintain deformation (or shaping) in place (e.g., within the recess 503). In some embodiments, a thin wafer bonded to a flexible structure can be deformed based on the mutual constraint between the soft structure and the thin wafer without the need to mold the flexible structure with a mold.

Referring now to FIG. 5D, in sequence 500D, after the pressing unit 517 is aligned with the bracket unit 501, the pressing unit 517 and the bracket unit 501 can be placed together for the thin wafer (or wafer) 509 and Bonding between the flexible structures 507. For example, the thin wafer 509 can be bonded or bonded to the flexible structure 507 at a particular area, such as the land 511. The thin wafer 509 can comprise a metal pad. Accordingly, the flexible structure 507 can include a mating pad. In one embodiment, the extrusion unit 505 can be aligned with the bracket unit 501 (eg, by three-dimensional rotational movement) to bring the pads of the thin wafer 509 into contact with corresponding mating pads of the flexible structure 507. At least one of the extrusion unit 505 and the bracket unit 501 can be transparent to allow for alignment. The pressing unit 505 and the pressing unit 517 of the fifth drawing B may be one of a plurality of pressing units which are used in a co-assembly device for a non-planar device and have bending with different curvatures. The surface.

In one embodiment, heat and pressure may be applied to bond the thin wafer 509 to the flexible structure 507, such as to the solder metal pads and the corresponding mating pads. The thin wafer can be held on the extrusion unit 505 (e.g., top extrusion), for example, by vacuum or electrostatic force. After the pads of the thin wafer 509 are aligned with the mating pads of the flexible structure 507, the pressing unit 517 can be pressed against the holder unit 501.

In some embodiments, the flexible structure 507 can be fabricated through a transparent bottom bracket such as the bracket unit 501. The multilayer wafer can be joined by pressure and heat applied between the pressing unit and the holder unit 501. The bracket unit 501 can be combined with recesses of different shapes or types to deform a flexible structure or an elastic wafer such as the flexible structure 507 depending on different wafer designs. When engaged Upon completion, in the sequence 500E of FIG. 5E, the extrusion unit 505 can be removed from the holder unit 501 for releasing the thin wafer 509 bonded to the flexible structure 507 in a non-planar shape. The bond pads may harden when cooled from bonding pressure/heat to bond (or bond) the separated wafers/wafers into a curved or non-planar shape. In one embodiment, after the sequence 5E, the thin wafer 509 bonded to the flexible structure 507 can be passivated (or coated) by the barrier layer and/or the polymer layer (eg, to protect from corrosion). The air gap between the flexible structure 507 (e.g., the separated wafers are mutually restrained to remain curved) and the thin wafer 509 can be backfilled with a thermally conductive dielectric material to increase heat dissipation.

The fifth F diagram shows an exaggerated schematic view of the bond pads between the thin wafer 509 and the flexible structure 507. For example, the pad 513 of the thin wafer 509 can be bonded (or soldered) to the mating pad 515 of the flexible structure 507. Pad 513 and mating pad 515 may comprise the same or different conductive materials (eg, gold). The bonding contact of the non-planar device, for example, the bonding pad 513 bonded to the mating pad 515, may be covered or coated with a hard passivation layer (for example, vapor phase coating or vacuum coating), and the hard passivation thin layer may be tantalum nitride. Made of diamond carbon or other viable materials to provide insulation and prevent joint contact of exposed devices. In one embodiment, the bond contacts can provide mechanical joining constraints and/or selective electrical bonds between different portions of the curved wafer.

6A through 6B are schematic diagrams showing an exemplary embodiment of a non-planar wafer that is mutually constrained. For example, a summary view 600A of Figure 6A can show two thin wafers/dies with short staggered slits and mating bond pads for bending the wafer components to each other. Yu Yi In an embodiment, the first thin wafer 601 and the second thin wafer 607 may each include four radial slots having mating metal bond pads. Thin wafers can be assembled into slots that are aligned at an angle. For example, the slots 605 may intersect the slots 603 at an angle of, for example, 45 degrees in the assembled curved thin wafer.

Referring now to FIG. 6B, the assembly 600B can include a first thin wafer 601 and a second thin wafer 607 that are bent through mutual restraints. Since the mutual restraints are applied to each other at the joint positions (for example, the bonding pad regions), the assembled curved thin wafers, such as the first thin wafer 601 and the second thin wafer 607, are not released back to the original flat or flat surface. status. In one embodiment, the bond pads can be in pairs and span each slot of the thin wafer to bond the portions of the wafer across the slot together.

7A to 7B are schematic diagrams showing an exemplary top view and a cross-sectional view of an assembly having a bonding pad. For example, Figure 7A shows a top view of a non-planar three-dimensional package of two thin wafer stacks bent into a spherical shape, such as a second thin wafer 607 over the first thin wafer 601. Adjacent slots between the stacked wafers may be angularly aligned (e.g., 45 degrees), such as slots 605 of the second thin wafer 607 and slots 603 of the first thin wafer 601. Bonding pads may be disposed on both sides of the slot, such as pads 701 and pads 703 that span the slots 603.

Figure 7B shows a schematic cross-sectional view of a film bond having a bond pad area (e.g., not drawn to an exaggerated scale). For example, the second thin wafer 607 and the first thin wafer 601 can be kept curved by the bonding of the pads, such as the bonding between the pads 703 and the mating pads 705. Alternatively or selectively, the thin wafer may be bonded by an adhesive to maintain a non-planar shape.

In one embodiment, stacking backfill layers between adjacent wafers of non-planar components of a multi-wafer, such as backfill 707, can promote heat dissipation between the wafers. The backfill layer can comprise a thermally conductive dielectric material to control the temperature rise of the assembled structure (or non-planar wafer) in operation. For example, the heat generated by the high speed processing circuitry embedded within the non-planar component can allow both the bond pad and the backfill layer to be bonded to help cool the non-planar component. In one embodiment, the backfill layer reduces or eliminates thermal insulation of the air gap in the non-planar component. Alternatively, the non-planar component can be immersed in a liquid, such as silicon oil, to fill the air gap to provide a cooling effect.

The foregoing stack is not limited to two layers or limited to a circle. A multi-wafer non-planar three-dimensional stack with staggered slots can be formed. Power, signals, and data can be skipped across multiple layers to pass through the slots to distribute power and signals between the stacked blocks and adjacent blocks. Since the active device will be subjected to bending stress, it is possible to consider and compensate for the effects caused by the stress in the system design, such as tensile stresses in the longitudinal and lateral directions on the N-type metal oxide semiconductor (MOS) transistor. This leads to an increase in trans-conductance and a rise or fall for P-type transistors.

8A through 8C are block diagrams showing exemplary sequences for assembling a thin die/wafer or substrate curved stack in one of the embodiments described herein. For example, in the sequence 800A of Figure 8A, two thin wafers, a first thin wafer 807 and a second thin wafer 809, can be held in the assembly apparatus. In an embodiment, the assembly device may include a pressing unit 803 (eg, an upper unit), a bracket unit 805 (eg, a lower unit), and a control unit 801. The extrusion unit 803 and/or the bracket unit 805 can be moved in three dimensions, including The translational and/or rotational movement is controlled, for example, by control unit 801.

In one embodiment, the first thin wafer 807 and the second thin wafer 809 can be respectively held by the pressing unit 803 and the bracket unit 805 by vacuum, static electricity or other means. For example, the extrusion unit 803 or the holder unit 805 can include a vacuum suction disk having an annular aperture or an opening for a vacuum channel to provide suction to hold the thin wafer. The pressing unit 803 and the bracket unit 805 can be combined with the mating surface to deform the held thin wafer. In an embodiment, the first thin wafer 807 is deformable on the first curved surface 811 of the pressing unit 803 while being held by the pressing unit 803. The second thin wafer 809 is deformable on the second curved surface 813 of the bracket unit 805 when held by the bracket unit 805. The first thin wafer 807 and/or the second thin wafer 809 may include slots to increase wafer elasticity for deformation (or curling, bending). The first curved surface 811 and the second curved surface 813 may have a common curvature to match each other.

In the sequence 800B of Figure 8B, the stents can be placed together after alignment. For example, the bracket unit 805 can be transparent to allow alignment of the first thin wafer 807 and the second thin wafer 809 with the extrusion unit 803. In one embodiment, the alignment between the supports can be based on a matching bond pad (eg, based on a mask) between the first thin wafer 807 and the second thin wafer 809.

The extrusion unit 803 is rotatable in three rotational dimensions for aligning the held wafer. In an embodiment, the pressing unit 803 can be constrained to move in a translational dimension, such as toward or away from the bracket unit 805, such that the bracket surfaces, such as the first curved surface 811 and the second curved surface 813, are matched to each other. In some real In an embodiment, the stent surface can be matched to a common center of curvature (or center of the ball).

When the pressing unit 803 and the holder unit 805 are placed together, heat and pressure can be applied to engage the first thin wafer 807 and the second thin wafer 809 at a specific region of the thin metal film bonding region, for example, the bonding region 819. The thin metal film junction region can include a pad that is aligned with the mating pad between the thin wafers. In one embodiment, the pads can be melted together using a controlled range of high temperatures. For example, heat of about 100-180 degrees C can be used for tin/lead pads. Alternatively, heat of about 350-450 degrees C may be required for pads made of gold alloy.

In the sequence 800C of the eighth C diagram, the pressing unit 803 can release the held first wafer 807 and separate itself from the holder unit 805. The non-planar component comprising the first wafer 807 bonded to the second wafer 809 can remain curved by mutual restraint provided by the bonding established between the wafers.

In the above description, the invention has been described in detail with reference to the specific exemplary embodiments thereof. It will be appreciated by those skilled in the art that the present invention may be modified in many ways without departing from the scope of the invention. The invention is not limited to the specific forms, figures, proportions and details disclosed. The description and drawings are intended to be illustrative of the invention and not to limit the invention.

100A‧‧‧ components

100B‧‧‧ components

101‧‧‧Fixed structure

103‧‧‧elastic wafer

105‧‧‧Fixed structure

107‧‧‧Flexible wafer

109‧‧‧elastic wafer

111‧‧‧Communication Path

113‧‧‧ eyeballs

115‧‧‧Fixed structure

117‧‧‧elastic wafer

119‧‧‧elastic wafer

121‧‧‧Retina

123‧‧‧Fixed structure

200A‧‧‧ structure

200B‧‧‧Non-flat area body circuit device

203‧‧‧Barrier layer

205‧‧‧ component layer

207‧‧‧ stressed layer

209‧‧‧ wafer carrier

210‧‧‧ polymer layer

211‧‧‧Adhesive

213‧‧‧Flexible thin structure

215‧‧‧stressed film

217‧‧‧stressed film

300A‧‧‧Overview

301, 303‧‧‧ slots

305‧‧‧ Thin wafer

307‧‧‧ cutting-edge

309‧‧‧ radius of curvature

311‧‧‧ angle

313‧‧‧Circle

400A‧‧‧Overview

400B‧‧‧ components

401‧‧‧Fixed structure

403‧‧‧ Thin wafer

405‧‧‧Slots

407‧‧‧Join pad

500A‧‧‧ Order

500B‧‧‧ Order

500C‧‧‧ Order

500D‧‧‧ Order

500E‧‧‧ Order

501‧‧‧ bracket unit

503‧‧‧ recess

505‧‧‧Extrusion unit

507‧‧‧Soft structure

509‧‧‧ Thin wafer

511‧‧‧ junction area

513‧‧‧ solder pads

515‧‧‧Matching pads

517‧‧‧Extrusion unit

600A‧‧‧Overview

600B‧‧‧ components

601‧‧‧First thin wafer

603‧‧‧Slots

605‧‧‧ slots

607‧‧‧Second thin wafer

701‧‧‧ solder pads

703‧‧‧ solder pads

705‧‧‧Matching pads

707‧‧‧ Backfill

800A‧‧‧ Order

800B‧‧‧ Order

800C‧‧‧ Order

801‧‧‧Control unit

803‧‧‧Extrusion unit

805‧‧‧ bracket unit

807‧‧‧First thin wafer

809‧‧‧Second thin wafer

811‧‧‧ first curved surface

813‧‧‧Second curved surface

819‧‧‧ junction area

The invention is illustrated by the examples in the following figures, and is not intended to limit the invention. Like reference numerals in the following drawings refer to like elements.

1A through 1D are schematic diagrams showing exemplary embodiments of non-planar components for an elastic wafer.

Second A is a block diagram showing a cross-sectional view of an elastic structure deposited with a stressed film in accordance with embodiments described herein.

Second B is a schematic diagram showing a non-planar device that is deformed in a wavy manner in accordance with the embodiments described herein.

3A through 3C are schematic diagrams showing exemplary non-planar wafers based on slots, in accordance with embodiments described herein.

4A to 4B are schematic diagrams showing an exemplary embodiment of a thin wafer in which a flexible structure is assembled.

Fifth to fifth F diagrams are block diagrams showing exemplary sequences of assembly procedures for non-planar elastic devices.

6A through 6B are schematic diagrams showing an exemplary embodiment of a non-planar wafer that is mutually constrained.

7A to 7B are schematic diagrams showing an exemplary top view and a cross-sectional view of an assembly having a bonding pad.

8A through 8C are block diagrams showing exemplary sequences for assembling a thin die/wafer curved stack in one of the embodiments described herein.

300A‧‧‧Overview

301, 303‧‧‧ slots

305‧‧‧ Thin wafer

307‧‧‧ cutting-edge

Claims (10)

An assembly method for a non-planar device based on one or more curved wafers, the method comprising: generating a plurality of slots as longitudinal openings in the wafer, the slots reducing displacement stress to increase Deformation of the wafer allows for an angle; the wafer is deformed through the slot to a desired deformation within the allowable angle of deformation; wherein when the desired deformation occurs, the portions of the wafer on either side of the slot are adjacent, in contact, or closed And providing a retention limit on at least a portion of the wafer, the retention restriction enabling the wafer to remain curved in accordance with the desired deformation. The method for assembling a non-planar device according to claim 1, wherein the desired deformation corresponds to a type of spherical curvature conforming to a human eyeball, wherein at least one of the wafers is relatively spherical and has a a circumference having a center, wherein at least one of the plurality of wafers has a particular slot of one or more of the plurality of slots, the one or more of the plurality of slots being aligned with the particular slot Forming a radial pattern extending outward from the center toward the circumference, wherein the fixed structure includes a separation wafer, wherein the wafer and the separation wafer are mutually restricted to maintain bending according to the desired deformation, the mutual limitation includes By the retention limitation of the fixed structure, the step of deforming the wafer includes depositing a stressed film on at least one side of the wafer, the stressed film providing a displacement force for at least a portion of the desired deformation, wherein the Subject to The stress film is patterned to configure the displacement force. The method for assembling a non-planar device according to claim 2, wherein each of the specific slots is formed as a passage region extending from a stop distance to the center toward the circumference, wherein the generation The plurality of slots includes: cutting the at least one of the wafers along the stop distance of the channel region from the circumference toward the center, wherein the stop distance is based on the at least one of the wafers used to cut the wafer Determining a limited resolution of the device, wherein the cutting stops at the stop distance to the center of the wafer and forms a fine tip, wherein the fine tip has sharp corners around the channel region, wherein the wafer is at least One performing the cutting system corresponds to opening a hole along one of the circumferences, wherein the length of the opening is determined based on the desired deformation, wherein the step of cutting the at least one of the wafers comprises removing the wafer material; The fine tip is rounded to form the slot such that the slot has no sharp corner shape at the stop distance to the center. The method for assembling a non-planar device according to claim 1, wherein the desired deformation is configured by a curved surface of the stent, wherein the stent comprises a vacuum hole disposed on the curved surface, wherein the step of deforming the wafer The method comprises: pressing the wafer onto the curved surface of the bracket to bend the wafer into the desired deformation, wherein the pressing is based on being applied through the vacuum hole Vacuum suction. The method for assembling a non-planar device according to claim 1, wherein the desired deformation is configured by a curved surface of the stent, wherein the stent comprises an electrostatic adsorption disk on the curved surface, wherein the step of deforming the wafer comprises The wafer is extruded onto the curved surface of the stent to bend the wafer to the desired deformation, wherein the extrusion is based on an electrostatic force applied through the electrostatic chuck. The method for assembling a non-planar device according to claim 1, wherein the wafer comprises a plurality of pads, wherein the retention limit mechanically limits a relative position of the pad to one or more fixed structures, wherein the retention is provided The limiting step includes: forming a shape of the fixing structure according to the desired deformation, the fixing structure comprising a mating pad corresponding to the pad of the wafer, wherein the step of forming the shape of the fixing structure comprises utilizing within a predetermined high temperature range Pressure molding the fixed structure to conform to the desired deformation; and bonding the bonding pad to the corresponding mating pad while maintaining the shape of the wafer according to the desired deformation, wherein the pad is corresponding to The step of bonding the mat includes: aligning the wafer with the fixed structure based on the desired deformation, and pressing the wafer against the fixed structure at a high temperature within a control range; wherein the plurality of pads At least two are joined to the fixed structure One of the plurality of pads, wherein the at least two of the plurality of pads are disposed across one of the plurality of slots, wherein the retention limit includes a limit of the one or more fixed structures to One of the plurality of slots maintains the desired deformation of the wafer, wherein the fixed structure comprises an elastomeric material. A method for assembling a three-dimensionally curved wafer, the three-dimensionally curved wafer comprising a first wafer and a second wafer, the method comprising: deforming the first wafer into a desired deformation, wherein the first wafer comprises a first groove a hole to allow deformation of the first wafer; wherein when the desired deformation occurs, the first wafer portions on both sides of the first slot are close to, in contact with, or closed; the second wafer is deformed to conform to the desired deformation, wherein The second wafer includes a second slot to allow deformation of the second wafer; wherein when the desired deformation occurs, the second wafer portions on either side of the second slot are close to, in contact with, or closed; and will be deformed The first wafer and the second wafer are bonded to each other to provide mutual retention between the first wafer and the second wafer, so that the first wafer and the second wafer remain bent to the desired deformation. The method for assembling a three-dimensionally bent wafer according to claim 7, wherein the first wafer comprises a plurality of first pads, wherein the second wafer comprises a plurality of second pads, and the plurality of second pads correspond to The first pad of the first wafer, wherein the first wafer and the second crystal are to be deformed The step of bonding the sheets to each other includes: aligning the first pad and the second pad between the deformed first wafer and the second wafer, wherein the alignment causes the first slot and the first slot The second slots are arranged to intersect each other in a substantially orthogonal manner; and a pressure is applied between the aligned first wafer and the second wafer in a controlled high temperature range to bond the first pads and the a second pad, wherein the first pad and the second pad are combined to include a conductive material, wherein the first die and the second die are permeable to the first pad and the second solder Separating the air gap from the pad; wherein the method further comprises: backfilling the air gap with a heat conductive material to allow heat dissipation between the first wafer and the second wafer through the heat conductive material, and combining The first pad and the second pad are passivated to isolate the conductive material from corrosion. An apparatus for manufacturing a non-planar curved wafer, comprising: a pressing unit having a first surface, the first surface being curved according to a desired curvature; a bracket unit having a second surface, the second surface Curved to conform to the desired curvature; and a control unit for moving the extrusion unit and the bracket unit, wherein the extrusion unit is configured to deform the wafer to the desired curvature on the first surface, Wherein the bracket unit is configured to deform the fixed structure on the second surface according to the desired curvature, and wherein the control unit is configured to enable the pressing unit and the bracket unit to be on the first surface and the second surface The wafer is bonded to the fixed structure, the bond providing retention constraints to the wafer and the fixed structure to maintain bending. The apparatus for manufacturing a non-planar curved wafer according to claim 9, wherein the first surface of the pressing unit is bent according to the desired curvature having a first center of curvature, wherein the second of the bracket unit The surface system is curved to conform to the desired curvature having a second center of curvature, wherein the movement causes the first center of curvature to overlap the second center of curvature such that the first surface mates with the second surface, wherein the wafer Including a bonding pad, wherein the fixing structure includes a mating pad corresponding to the pad, wherein the control unit rotates the pressing unit in three rotation dimensions to make the first surface and the second surface Alignment, wherein at least one of the extrusion unit and the holder unit is transparent such that the alignment is based on the pad and the mating pad.