TWI519961B - Temperature-controlled storage module - Google Patents

Description

Temperature control storage module

The behavior of memory such as NAND flash memory is often greatly dependent on its operation and storage temperature. At high temperatures, persistence is attributed to improved annealing, but data retention is degraded according to the Arrhenius equation. At very low temperatures, other effects are prominent. Memory designers consider this dependency to produce a memory that can operate over a wide temperature range, providing a compromise between data retention, persistence, and other memory characteristics. However, operating a compromise over a wide range of temperatures is due to the fact that certain characteristics are more suitable for adjusting one of the smaller temperature ranges for their particular operation.

Temperature related issues also affect the storage module in other ways. For example, increasing read and write performance typically requires multiple memory dies or plane parallelism to achieve desired performance. Current consumption and heat dissipation are two main factors that limit the amount of parallelism in a storage module. Even if there is no limitation on current dissipation and the host can guarantee a desired case temperature, there is still a problem of heat dissipation due to the passive thermal resistance between the memory die and the case. In addition, typical host access to storage modules typically has a short-lived, strong demand for data, which is called bursting. During a burst of time, more demand is placed in the memory, which can raise the temperature of the memory to a maximum operating nominal temperature or a level above the maximum operating nominal temperature.

The embodiments of the invention are defined by the scope of the patent application, and this section should not be construed as limiting the scope of the claims.

By way of introduction, the following embodiments relate to a temperature controlled storage module. In one embodiment, a memory module including a memory, a temperature sensor, a thermoelectric cooler, and a controller is provided. The controller compares a temperature reading of one of the temperature sensors to a target temperature. If the temperature reading is different from the target temperature, the controller activates the thermoelectric cooler. For example, if the temperature reading is above the target temperature, the thermoelectric cooler can be activated to cool the memory. This allows memory (eg, NAND die(s)) to operate over a narrower temperature range, thereby providing a better system tradeoff for memory (eg, NAND) characteristics.

Other embodiments are possible, and each of these embodiments can be used alone or in combination. Accordingly, various embodiments will now be described with reference to the drawings.

50‧‧‧Integrated circuit package

100‧‧‧ storage module

110‧‧‧ Controller

111‧‧‧Host Interface Module

112‧‧‧Flash Management Module

113‧‧‧Flash interface module

115‧‧‧ Thermoelectric cooler (TEC) controller

117‧‧‧Optional temperature sensor

120‧‧‧Memory grain/memory

125‧‧‧temperature sensor

130‧‧‧Thermoelectric cooler (TEC)

150‧‧‧Thermoelectric cooler (TEC)

210‧‧‧Host

220‧‧‧Host controller

230‧‧‧ functional modules

240‧‧‧Host

245‧‧‧Host Controller

300‧‧‧ Flowchart

310‧‧‧ action

320‧‧‧ action

330‧‧‧ action

340‧‧‧ action

350‧‧‧ action

410‧‧‧Operational Amplifier

420‧‧‧Operational Amplifier

430‧‧‧First Group of Metal Oxide Semiconductor Field Effect Transistors (MOSFETs)

440‧‧‧First Group of Metal Oxide Semiconductor Field Effect Transistors (MOSFETs)

450‧‧‧Second Group of Metal Oxide Semiconductor Field Effect Transistors (MOSFETs)

460‧‧‧Second Group of Metal Oxide Semiconductor Field Effect Transistors (MOSFETs)

500‧‧‧Substrate

510‧‧‧Printed circuit board

520‧‧‧ solder balls

700‧‧‧Second Thermoelectric Cooler (TEC)

710‧‧‧Heat conductive filler

1025‧‧‧Host

1040‧‧‧ Thermoelectric cooler (TEC) controller

1050‧‧‧Thermoelectric cooler (TEC)

1100‧‧‧Hot electric cooler

1110‧‧‧Cooling plate

1120‧‧‧ radiator

1130‧‧‧ Semiconductor

1140‧‧‧ Semiconductor

1150‧‧‧heat conducting plate

1160‧‧‧heat conducting plate

1170‧‧‧Insulator

1180‧‧‧Insulator

1 is a block diagram of an exemplary storage module of an embodiment.

2A is a block diagram of a host of an embodiment in which the exemplary module of FIG. 1 is embedded in the host.

2B is a block diagram of an exemplary storage module of FIG. 1 removably coupled to a host, wherein the storage module and the host are separable and detachable.

3 is a flow chart of one of the methods for controlling one of the temperatures of a storage module.

4 is a diagram of one of the circuits of one embodiment for controlling the temperature of a storage module.

Figure 5 is a diagram of one of the storage modules of one embodiment of a single thermoelectric cooler.

FIG. 6 is a diagram showing heat transfer from the storage module of FIG. 5.

Figure 7 is a diagram of one of the storage modules of one of the embodiments of two thermoelectric coolers.

FIG. 8 is a diagram showing a heat transfer from the storage module of FIG. 7.

9A and 9B are diagrams of one embodiment of cooling a memory die prior to a burst period.

Figure 10 is an illustration of one of the storage modules of another embodiment.

Figure 11 is an illustration of one of the prior art thermoelectric coolers.

Turning to the drawings, FIG. 1 is a diagram of one of the storage modules 100 of one embodiment. As shown in FIG. 1 , the storage module 100 includes a controller 110 in communication with one or more of the temperature sensors 125 or one of the plurality of memory dies 120 therein. As used herein, the phrase "communicate with" may mean "directly communicate with" or "indirectly communicate with" through one or more components, which may or may not be displayed or described in In this article. Figure 1 shows memory die 120 as a NAND memory die; however, other memory technologies can be used. In addition, the memory 120 can be one-time programmable, less programmable, or multiple-programmable. The memory 120 can also use a single-level cell (SLC), a multiple-level cell (MLC), a triple-level cell (TLC), or other known or subsequently developed. Memory technology. In addition, the memory 120 can be two-dimensional or three-dimensional (eg, Bit Cost Memory (BiCS)) and can be a multi-chip package or a single-chip package.

The storage module 100 of FIG. 1 also includes a temperature transfer device, such as a thermoelectric cooler (TEC) 130. (In one embodiment, the controller 110, the memory die 120 and the TEC 130 are all stacked on a substrate, and all of the components are housed in an integrated circuit package 50). A thermoelectric cooler uses a Peltier effect to create a solid state device of heat flux between the junctions of two different types of materials. In general, thermoelectric coolers operate by the Peltier effect. As shown in FIG. 11, one type of prior art thermoelectric cooler 1100 (other types may also be used) has two sides, and when DC current flows through the cooler 1100, it brings heat from one side of the cooler 1100 to The other side. This causes one side to cool while the other side gets hot. The side that is cooled is attached to a cooling plate 1110, and the side that is heated is attached to a heat sink 1120. The thermoelectric cooler 1100 can be made of two unique semiconductors (a p-type 1130 and an n-type 1140) having different electron densities. The semiconductors 1130, 1140 are placed in thermal parallel with each other and electrically connected in series with one another, and then joined to the thermally conductive plates 1150, 1160 on each side (with the insulators 1170, 1180 in close proximity to the thermally conductive plates). When a voltage is applied to the free ends of the two semiconductors 1130, 1140, the transconductance There is a DC current flow at the junction of the bodies 1130, 1140, causing a temperature difference. The side having the cooling plate 1110 absorbs heat, which is then moved to the other side with the heat sink 1120.

Since a thermoelectric cooler transfers heat from one side of the device to one of the heat pumps on the other side with electrical energy consumption, a thermoelectric cooler can be used for cooling (cooling) or heating depending on the direction of the current. As will be discussed below, in these embodiments, a thermoelectric cooler is used to cool or heat the memory die 120 to maintain a desired temperature. Since cooling and heating require additional current from a power supply, such power requirements should be considered when designing a system for use with the storage module 100 to ensure that appropriate power is supplied to the storage module 100. Due to such power requirements, the storage module 100 can seek for a particular use in which there is no lack of power, such as in a solid-state drive or in a host device with embedded memory (eg, , on a set of boxes). However, these embodiments can also be used with removable storage devices. For example, the storage module 100 can receive power from an external source to supply power to the controller 110 and the memory 120 or can have its own power source (eg, a battery). Additionally, as will be described below, additional TEC (such as (TEC 2) 150) may be present inside or outside of the storage module 100. The use of thermoelectric cooler 130 will be discussed in detail below.

As shown in FIG. 2A, the storage module 100 can be embedded in a host 210 having a host controller 220. That is, the host 210 includes the host controller 220 and the storage module 100 such that the host controller 220 interfaces with the embedded storage module 100 to manage its operations. For example, storage module 100 may take the form of one of SanDisk Corporation iNAND ^TM eSD / eMMC embedded flash drive. The host controller 220 or another component of the host 210 will supply power to the storage module 100. The host controller 220 can interface with the embedded storage module 100 using a storage interface such as, for example, eMMC, UFS, USB, SATA, SAS, SCSI, Fibre Channel, or PCIe. The host 210 can take any form such as, but not limited to, a solid state drive (SSD), a hybrid storage device (having both a hard disk drive and a solid state drive), a memory cache system, and a mobile phone. , a tablet computer, a digital media player, a gaming device, a number of personal assistants (PDAs), an action (eg, a notebook, a laptop) personal computer (PC) or an e-book reader. As shown in FIG. 2A, host 210 can include other functional modules 230 that are optional. For example, if host 210 is a mobile phone, other functional modules 230 may include hardware and/or software components to make and make phone calls. As another example, if the host 210 has network connectivity, the other functional modules 230 can include a network interface. Of course, these are just a few examples and other embodiments may be used. In addition, host 210 may include other components not shown in FIG. 2A to simplify the drawing, such as an audio output, input-output, and the like.

As shown in FIG. 2B, instead of being an embedded device in a host, the storage module 100 can have the storage module 100 detachably connected to a host 240 via a mated connector (having a host controller) 245) Physical and electrical connectors. Another component of the host controller 245 or the host 240 can supply power to the storage module 100, or power can be provided to the storage module 100 from another device. In this embodiment, the storage module 100 is a device that is separate from (and not embedded in) the host 240. The storage module 100 can be, for example, a removable memory device such as a secure digital (SD) memory card, a microSD memory card, a Compact Flash (CF) memory card, or a universal serial bus (USB). a device (having a USB interface to one of the hosts), and the host 240 is a separate device such as, for example, a mobile phone, a tablet, a digital media player, a gaming device, a PDA, an action (eg, notebook, laptop) personal computer (PC) or an e-book reader.

In FIGS. 2A and 2B, the storage module 100 communicates with a host controller 220 or host 240 via a storage interface. For example, the storage interface can take any suitable form such as, but not limited to, eMMC, UFS, USB, SATA, SAS, SCSI, Fibre Channel, or PCIe. The interface in the storage module 100 transmits a management command from the host controller 220 (FIG. 2A) or the host 240 (FIG. 2B) to the controller 110, and also transmits a memory response from the controller 110 to Host controller 220 (Fig. 2A) or host 240 (Fig. 2B). In addition, it should be noted that some or all of the functions described herein performed by the controller 110 in the storage module 100 may be performed by the host controller 220 when the storage module 100 is embedded in the host 210.

Returning to FIG. 1 , the controller 110 includes a host interface module 111 , a flash management module 112 , a flash interface module 113 , a TEC controller 115 , and an optional temperature sensor 117 . Controller 110 can be implemented in any suitable manner and controller 110 can be from SanDisk or from one of the other vendors' controllers. For example, controller 110 can take the form of a microprocessor or processor and a computer readable medium storing computer readable code (eg, software or firmware) that can be processed, for example, by (micro) , logic gates, switches, application-specific integrated circuits (ASICs), a programmable logic controller, and an embedded microcontroller. One or more of the TEC controllers 115 and the various modules 111, 112, 113, 117 may be implemented by hardware or may be executed by a central processing unit (CPU) of the controller 110 (stored in The memory 120 or another location is implemented.

The host interface module 111 receives host commands (eg, read and write commands) through a storage interface, such as, for example, eMMC or any of the other interfaces listed above. The flash management module 112 is configured by the controller 110 to process the host request and translate the requests into NAND flash operations, and the flash interface module 113 executes the memory according to the instructions provided by the flash management module 112. operating.

The TEC controller 115 is used in conjunction with the TEC 130 to provide power to the TEC 130 to heat or cool the NAND memory die 120 as appropriate. As discussed above, the behavior of a memory such as a NAND flash memory typically depends greatly on temperature. At high temperatures, persistence is attributed to improved annealing, but data retention is degraded. At very low temperatures, other effects are prominent. Memory designers consider this dependency to produce a memory that can operate over a wide temperature range, but using a wider temperature range is often not optimal, as some features are more suitable for adjusting for specific operations. A smaller temperature range.

This embodiment can be used to set the temperature of the storage module 100 to be suitable for its specific operation. Make one of the temperatures. Moreover, with this embodiment, the end user capabilities of the storage module 100 can be given to control the temperature of the storage module to emphasize a desired system or memory (e.g., NAND) characteristics, such as persistence or data retention. For example, using some memory technology, a temperature range of 0 ° C to 40 ° C is preferred for high data retention, while a temperature range of 55 ° C to 85 ° C is preferred for high durability.

In operation, TEC controller 115 compares a temperature reading of one of temperature sensors 125 to a target temperature. The target temperature can be provided by the flash management module 112 to the TEC controller 115, and the TEC controller 115 can obtain the temperature reading of the temperature sensor 125 via a NAND command. If the temperature reading of temperature sensor 125 is different from the target temperature, TEC controller 115 may activate TEC 130 to cool or heat memory 120 as appropriate. This operation is shown in flowchart 300 of FIG.

As shown in FIG. 3, TEC controller 115 compares the temperature reading of temperature sensor 125 to a target temperature (act 310). The target temperature may be predetermined (fixed) or adjusted by a user of the storage module 100. For example, the user can change the temperature through a storage protocol command to achieve a desired memory characteristic. Further, the target temperature may be a single temperature (eg, 55 ° C) or a temperature range (eg, 55 ° C to 85 ° C). If the temperature reading of temperature sensor 125 is above the target temperature, TEC controller 115 sets the power of TEC 130 such that it cools memory die 120 (act 320). If the temperature reading of temperature sensor 125 is below the target temperature, TEC controller 115 sets the power of TEC 130 such that it heats memory die 120 (act 330). If the temperature reading of temperature sensor 125 is equal to the target temperature, TEC controller 115 turns off the power of TEC 130 such that it neither heats nor cools memory die 120 (act 340). After waiting for a period of time (act 350), the method can be restarted again.

Figure 4 is a diagram of one of the circuits used to control one of the temperatures. In this example, the target temperature is in a range between Ref 1 (eg, 55 ° C) and Ref 2 (eg, 85 ° C). As shown in Figure 4, this circuit includes two operational amplifiers 410, 420, at TEC One of the first set of MOSFETs 430, 440 on one side of 130 and one of the second set of MOSFETs 450, 460 on the other side of TEC 130. In each pair, only one MOSFET is conducted at a time. In operation, the first operational amplifier 410 compares the temperature reading of the temperature sensor 125 with the first reference temperature. If the temperature reading is above the reference temperature, a voltage is applied to the first set of MOSFETs 430, 440 (430 conduction) to drive current through the TEC 130 to initiate a cooling operation. The second operational amplifier 420 compares the temperature reading of the temperature sensor 125 with a second reference temperature. If the temperature reading is below the reference temperature, a voltage is applied to the second set of MOSFETs 450, 460 to pull current through the TEC 130 to initiate a heating operation. In this manner, TEC 130 can maintain a fixed temperature or temperature range on memory die 120.

There are many configurations and alternatives for these embodiments. For example, in the above embodiments, temperature sensor 125 is part of memory die 120. However, instead of or in addition to the temperature sensor 125 in the memory die 120, the memory module 100 can have one of the temperature sensors 117 in the ASIC of the controller 110 or in another location in the memory module 100. (See Figure 1). If multiple temperature sensors are used, the TEC controller 115 can use individual readings alone (take the highest/lowest readings) or use them together in some way (eg, average the readings, apply different weights to These readings, etc.).

The TEC 130 can be located in any suitable location in the storage module 100, and Figures 5-8 illustrate some exemplary configurations. In FIG. 5, the controller 110, the memory die 120, and the TEC 130 are all stacked on a substrate 500, wherein the TEC 130 is located between the substrate 500 and the first memory die in the stack of memory die 120. The substrate 500 is thermally coupled and electrically coupled to a printed circuit board 510 via a plurality of solder balls 520. Substrate 500 and solder balls 520 may be part of a ball grid array (BGA) package such as from HL-PBGA packages from Intel. FIG. 6 shows the thermal transfer from the storage module 100 of FIG. As can be seen in Figure 6, although some of the heat flow is from the sides and top of the memory die 120, most of the heat is transferred from the memory die 120 through the TEC 130 and through the printed circuit board via the substrate 500 and solder balls 520. 510 dissipated.

If there is a significant temperature gradient between the nearest and farthest dies of TEC 130, additional heating/cooling may be required and one or more additional TECs may be added to storage module 100. For example, in Figure 7, a second TEC 700 is added to the top of the stack such that the memory die 120 is sandwiched between the two TECs 130 and 700 to isolate the inner die 120 from the outside temperature. As compared to the configuration shown in Figures 5 and 6, controller 110 is moved from the top to the bottom of memory die 120 and a thermally conductive filler 710 is added to fill the void. Figure 8 shows the thermal transfer of this configuration in which the two TECs 130, 700 dissipate heat from the top and bottom of the storage module 100.

It should be noted that in the above example, when the TEC is inside the package 50 (housing) of the storage module 100, one of the TECs outside the package 50 (see FIG. 1) may be used instead of or in addition to the TEC inside the package 50. . This alternative may be preferred in situations where the storage module 100 is operated in an unusually warm or cold environment. Since the outer TEC 150 is located on the outside of the storage module 100 and is not subject to space and other constraints, larger devices for cooling or heating (eg, standard refrigeration techniques) can be used.

In the above examples, it is assumed that the entire memory die 120 requires a target temperature to optimize a NAND characteristic. However, there may be more than one NAND characteristic that requires different target temperatures. For example, it may be desirable to design a memory module that has extremely long data retention for user content and extremely high persistence for a single cell (SLC) cache, which cannot be optimal at the same temperature. . To address this situation, a memory die can be divided into a plurality of regions, each region being associated with a different target temperature. The TEC can also be divided into one of a plurality of areas independently controlled by the TEC controller. Therefore, for the above examples, the advantages of the planarity of the TEC and the memory can be utilized to separate the memory and the TEC into two separate independent units. The first TEC zone heats the cache block and ensures high durability while the second TEC zone cools the user content block (complete block) and ensures high data retention. In this manner, one of the non-uniform temperature profiles across the TEC is used to achieve different temperature conditions for different memory usage (here, cache and full block storage).

In another embodiment, the temperature control of a storage module is used to prevent the temperature of the memory from rising to a level at which one of the maximum operating rated temperatures or a maximum operating rated temperature is exceeded when a host transmits a data burst. As used herein, a "data burst" refers to a relatively high duty cycle of a host (i.e., a period in which a host writes a relatively high amount of data and/or issues a relatively high number of write commands). That is, the bursting system requires a time period in which one of the storage modules 100 is above average to satisfy the write activity of the host. In many cases, the host operates most of the time in a near idle mode and when there is a high demand for one of the data (eg, when a user activates a host device (such as a camera or mobile phone) or when there is a large attachment When the email arrives, it occasionally sends a bundle of information. The typical duration of a data burst is a few seconds, and the required performance is higher than in other modes. This short and strong demand for data can increase the temperature of the memory to a dangerous level and can negatively impact the responsiveness of the system, especially when multiple grain parallelism is used to meet increased read and write performance requirements. Time.

To address this issue, in another embodiment (which may be used with or independently of the embodiments discussed above), the TEC controller 115 determines that the host will send a burst of data and then The TEC 130 is activated to cool the memory 120 prior to receipt of the data burst.

The TEC controller 115 can determine that the host will send a burst of data in any suitable manner. For example, the TEC controller 115 can receive a notification (eg, via a storage agreement command): the host will send a burst of data. This notification may explicitly indicate that a data burst is coming or may contain some other message indicating an upcoming burst (eg, the host buffer is full). As another example, the storage module 100 can have an internal detection mechanism for inferring when a burst will occur based on host activity. For example, the storage module 100 can determine whether the write activity of the host exceeds a threshold within a time period. The write activity can be, for example, the number of data received from the host to be written in the storage module 100 and/or the number of write commands received from the host (the number of input/output operations per second ( "IOPS"))). Better The storage module 100 evaluates whether there is a data burst for a period of time small enough to enable rapid detection of data bursts but large enough to eliminate detected noise (eg, 100 to 200 microseconds). In addition, the threshold for the measurement write activity can be static (an absolute number) (eg, receiving data from the host at a rate of 40 MB per second and/or receiving from the host within a window of 100 microseconds to 200 microseconds) 200 to 2000 write commands) or dynamic (a relative number) (eg, as a percentage of a host-based write activity (within the same or different time periods) in a weighted or unweighted manner). If the storage module 100 is designed to accept a notification from the host and has an internal detection mechanism, a rule can be set to determine which indication to follow when there is a conflict (eg, a notification from the host will trigger a cooling operation and Subsequent instructions from the internal detection mechanism will be ignored).

Regardless of the method used, when the TEC controller 115 determines that the host will send a burst, the TEC controller 115 activates the TEC 130 to cool the memory 120 before the host sends the burst. A target low temperature can be set, or the TEC 130 can be operated only until it is turned off. This "pre-cooling" memory 120 takes into account the amount of heat generated when the host sends a burst. The TEC controller 115 can determine when to stop cooling the memory 120 in response to a notification from one of the hosts or by making an inference from the write activity of the host.

9A and 9B illustrate this embodiment. As shown in Figure 9A, the host is in an idle mode before and after the burst of data. As shown in Figures 9A and 9B, the memory 120 operates at a constant temperature below one of the maximum operating temperatures before the host sends the data burst. In the case where four grain parallelisms are used, the temperature of the memory 120 rises when the host transmits a data burst and peaks at a temperature one of the temperatures ΔT beyond the normal operating conditions. As shown in Figure 9B, this peak temperature is below the maximum operating temperature but still relatively high. However, when 8 grain parallelisms are used, a temperature rise of 2X ΔT is encountered during bursts, which causes the temperature of the memory 120 to rise above the maximum operating temperature and can cause damage to the memory module 100.

Using the method of this embodiment, when the storage module 100 receives a burst notification from the host At the time, it begins to cool the memory 120 before receiving the burst. This lowers the lower temperature limit of the memory 120 so that even if one of the temperatures of 2X ΔT rises, the temperature is lower than the maximum operating temperature.

There are many alternatives that can be used with this embodiment. For example, instead of stopping the cooling of the memory at the end of the burst, the TEC controller 115 may provide further cooling after the end of the burst to prepare for the next burst, especially if the next burst will be in a short time thereafter (eg, 15 seconds) When it occurs internally or when the internal storage device 100 detects the beginning of the burst (because internal detection can cause cooling to start after the burst has started). In another alternate embodiment (shown in FIG. 10), instead of or in addition to the TEC controller 115 in the storage module 100 that controls one or more TECs, the host 1025 can include its own TEC controller 1040 and the storage module. One or more of its own TEC 1050 external to the package 50 (but preferably close to the storage module package). As another alternative, the controller 1030 in the host 1025 can send commands to the TEC controller 115 in the storage module 100 (eg, via a storage protocol command) to operate the TEC in the storage module 100 and around the storage module 100. 130, 150. Conversely, the TEC controller 115 in the storage module 100 can instruct the TEC controller 1040 in the host 1025 to operate its TEC 1050.

The foregoing detailed description is to be understood as illustrative of the invention Only the scope of the following claims and all equivalents thereof are intended to define the scope of the invention. Finally, it should be noted that any aspect of any of the preferred embodiments described herein may be used alone or in combination with one another.

50‧‧‧Integrated circuit package

100‧‧‧ storage module

110‧‧‧ Controller

111‧‧‧Host Interface Module

112‧‧‧Flash Management Module

113‧‧‧Flash interface module

115‧‧‧ Thermoelectric cooler (TEC) controller

117‧‧‧Optional temperature sensor

120‧‧‧Memory grain/memory

125‧‧‧temperature sensor

130‧‧‧Thermoelectric cooler (TEC)/memory grain

150‧‧‧Thermoelectric cooler (TEC)

Claims (48)

A storage module includes: a memory; a temperature sensor; a thermoelectric cooler; and a controller that communicates with the memory, the temperature sensor, and the thermoelectric cooler, wherein the controller Configuring to: compare a temperature reading of the temperature sensor with a target temperature; and if the temperature reading is different from the target temperature, activate the thermoelectric cooler, wherein the target temperature is selected by a user A high data retention mode or a high endurance mode is determined wherein the target temperature for the high data retention mode is lower than the target temperature for the high persistence mode. The storage module of claim 1, wherein the target temperature is predetermined. The storage module of claim 1, wherein the target temperature is adjustable by a user of the storage module. The storage module of claim 1, wherein the target temperature is a single temperature. The storage module of claim 1, wherein the target temperature is a temperature range. The storage module of claim 1, wherein if the temperature reading is higher than the target temperature, the controller activates the thermoelectric cooler to cool the memory. The storage module of claim 6, wherein if the temperature reading is lower than the target temperature, the controller activates the thermoelectric cooler to heat the memory. The storage module of claim 1, wherein the memory comprises a memory die and a substrate, and wherein the thermoelectric cooler is located between the memory die and the substrate. The storage module of claim 8, further comprising a printed circuit board and the substrate The printed circuit board is thermally coupled and electrically coupled to a plurality of solder balls. The memory module of claim 1, wherein the memory comprises a plurality of memory dies, wherein the memory module comprises an additional thermoelectric cooler, and wherein the plurality of memory dies are located in the thermoelectric cooler Between extra thermoelectric coolers. The storage module of claim 1, further comprising a package for housing the controller and the memory, and wherein the thermoelectric cooler is inside the package. The storage module of claim 1, further comprising a package for housing the controller and the memory, and wherein the thermoelectric cooler is external to the package. The storage module of claim 1, wherein the temperature sensor is located in the memory. The storage module of claim 1, wherein the temperature sensor is located in the controller. The storage module of claim 1, wherein the memory is divided into a plurality of regions, each associated with a different target temperature, and wherein the thermoelectric cooler is divided into one of a plurality of regions independently controlled by the controller. The storage module of claim 1, wherein the storage module is embedded in a host. The storage module of claim 1, wherein the storage module is removably connected to a host. The storage module of claim 1, wherein the memory system is a NAND memory. The storage module of claim 1, wherein the storage module is a solid state hard disk. A storage module includes: a substrate; a memory die; a temperature sensor; a thermoelectric cooler disposed between the memory die and the substrate; and a package that houses the substrate, The memory die and the thermoelectric cooler, wherein if a temperature reading read from the temperature sensor is different from a target temperature, the thermoelectric cooler is activated, and wherein the target temperature is selected by a user A high data retention mode or a high persistence mode is selected, wherein the target temperature for the high data retention mode is lower than the target temperature for the high persistence mode. The storage module of claim 20, further comprising a second thermoelectric cooler on one of the other sides of the memory die. The storage module of claim 21, further comprising at least one additional memory die between the memory die and the second thermoelectric cooler. The storage module of claim 20, further comprising a controller on one of the other sides of the memory die. The storage module of claim 23, further comprising at least one additional memory die between the memory die and the controller. The storage module of claim 20, further comprising a controller located between the memory die and the thermoelectric cooler. The storage module of claim 20, wherein the storage module is embedded in a host. The storage module of claim 20, wherein the storage module is removably coupled to a host. The storage module of claim 20, wherein the memory die is a NAND memory die. The storage module of claim 20, wherein the storage module is a solid state drive. A method of controlling a temperature of a storage module, the method comprising: performing a function of: comparing one of the temperature sensors in a memory module having a memory, a temperature sensor, and a thermoelectric cooler a temperature reading and a target temperature; and if the temperature reading is different from the target temperature, the thermoelectric cooler is activated, wherein the target temperature is determined by a user selecting one of a high data retention mode or a high persistence mode Which is used for the high data retention mode The target temperature is lower than the target temperature for the high persistence mode. The method of claim 30, wherein the target temperature is predetermined. The method of claim 30, wherein the target temperature is adjustable by a user of the storage module. The method of claim 30, wherein the target temperature is a single temperature. The method of claim 30, wherein the target temperature is a temperature range. The method of claim 30, wherein if the temperature reading is above the target temperature, the thermoelectric cooler is activated to cool the memory. The method of claim 35, wherein if the temperature reading is below the target temperature, the thermoelectric cooler is activated to heat the memory. The method of claim 30, wherein the memory comprises a memory die and a substrate, and wherein the thermoelectric cooler is located between the memory die and the substrate. The method of claim 37, further comprising a printed circuit board and a plurality of solder balls thermally and electrically coupled to the printed circuit board. The method of claim 30, wherein the memory comprises a plurality of memory dies, wherein the memory module comprises an additional thermoelectric cooler, and wherein the plurality of memory dies are located in the thermoelectric cooler and the additional thermoelectric cooling Between the devices. The method of claim 30, wherein the storage module comprises a package that houses the controller and the memory, and wherein the thermoelectric cooler is internal to the package. The method of claim 30, wherein the storage module includes a package that houses the controller and the memory, and wherein the thermoelectric cooler is external to the package. The method of claim 30, wherein the temperature sensor is located in the memory. The method of claim 30, wherein the temperature sensor is located in the controller. The method of claim 30, wherein the memory is divided into a plurality of regions, each associated with a different target temperature, and wherein the thermoelectric cooler is divided into one of a plurality of regions independently controlled by the controller. The method of claim 30, wherein the storage module is embedded in a host. The method of claim 30, wherein the storage module is removably coupled to a host. The method of claim 30, wherein the memory system is a NAND memory. The method of claim 30, wherein the storage module is a solid state hard disk.