TWI518769B - Etching apparatus - Google Patents
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- TWI518769B TWI518769B TW102117234A TW102117234A TWI518769B TW I518769 B TWI518769 B TW I518769B TW 102117234 A TW102117234 A TW 102117234A TW 102117234 A TW102117234 A TW 102117234A TW I518769 B TWI518769 B TW I518769B
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Description
本發明是有關於一種半導體製程設備，且特別是有關於一種蝕刻設備。 This invention relates to a semiconductor processing apparatus, and more particularly to an etching apparatus.
在一般的太陽能電池製程中，於基板表面的粗化處理、以及摻雜擴散製程後，通常會進行一道蝕刻處理，以去除基板之背面與側面的摻雜層，來使基板之正面與背面電性隔離。 In the general solar cell process, after the roughening treatment on the surface of the substrate and the doping diffusion process, an etching process is usually performed to remove the doped layer on the back side and the side of the substrate to make the front and back sides of the substrate electrically Sexual isolation.
此道蝕刻處理一般係採濕式蝕刻的方式進行，係使基板經滾輪的傳送且蝕刻液面略微接觸基板側面的方式渡過蝕刻槽，來達到基板之側面與背面的蝕刻。由於蝕刻液通常為酸液或鹼液，因此為了降低蝕刻液蒸氣對外界環境的影響，蝕刻槽之上方會設置蓋板。 This etching process is generally performed by wet etching, in which the substrate is transferred through the roller and the etching liquid surface slightly contacts the side surface of the substrate to pass through the etching groove to etch the side and back surfaces of the substrate. Since the etching liquid is usually an acid liquid or an alkali liquid, in order to reduce the influence of the etching liquid vapor on the external environment, a cover plate is disposed above the etching groove.
然而，傳統蓋板為硬式壓克力板，蝕刻液蒸氣容易凝結於蓋板之下表面上。凝結在蓋板上之蝕刻液會滴落在下方正在蝕刻槽中進行蝕刻處理的基板正面上。滴落在基板正面上之蝕刻液會在基板正面上蝕刻出如圓形的蝕刻痕，而造成此片基板必須進行重工。如此一來，將導致製程成本提高，產能下降。 However, the conventional cover plate is a hard acrylic plate, and the etchant vapor easily condenses on the lower surface of the cover. The etching liquid condensed on the cap plate is dropped on the front surface of the substrate which is etched in the etching groove. The etching liquid dropped on the front surface of the substrate etches a circular etching mark on the front surface of the substrate, which causes the substrate to be reworked. As a result, the cost of the process will increase and the capacity will drop.
此外，一般的蝕刻痕，線上工作人員透過目視即可檢出處理；然若屬較輕微且不明顯的蝕刻痕時，線上工作 人員則不易發現，如此將造成後續產出之電池品質不佳之問題。 In addition, the general etching marks, online staff can be detected through visual inspection; if it is a slight and inconspicuous etching marks, work online It is not easy for people to find out, which will cause the battery quality of subsequent output to be poor.
有鑑於習知技術的種種缺失，本發明之一態樣就是在提供一種蝕刻設備，其蓋體與槽體之間設有可吸附水氣之吸附單元，而可避免蝕刻液蒸氣凝結於蓋板上，並可進一步避免凝結之液體滴落在下方進行蝕刻之基板表面上。故，可大幅提升蝕刻製程的良率，而可有效降低基板重工的比例，進而可確保品質、提升產能，減低製程成本。 In view of the various deficiencies of the prior art, one aspect of the present invention is to provide an etching apparatus having an adsorption unit capable of adsorbing moisture between the cover body and the tank body, thereby preventing the etching liquid vapor from condensing on the cover plate. Further, it is possible to further prevent the condensed liquid from dripping onto the surface of the substrate which is etched underneath. Therefore, the yield of the etching process can be greatly improved, and the ratio of the substrate rework can be effectively reduced, thereby ensuring quality, increasing productivity, and reducing process cost.
本發明之另一態樣是在提供一種蝕刻設備，其吸附單元之下表面可呈傾斜狀，例如呈單向傾斜、雙邊彎曲傾斜、雙面傾斜或呈開口朝下的拋物線形狀，因此可利用毛細現象將吸附單元所吸附之蝕刻液體導流至槽體之一側或兩側。故，可更有效地防止蝕刻液滴落在槽體內之基板上。 Another aspect of the present invention provides an etching apparatus in which the lower surface of the adsorption unit can be inclined, for example, in a unidirectional inclination, a bilaterally curved inclination, a double-sided inclination, or a parabolic shape with an opening downward, so that it can be utilized. The capillary phenomenon conducts the etching liquid adsorbed by the adsorption unit to one side or both sides of the tank body. Therefore, it is possible to more effectively prevent the etching droplets from falling on the substrate in the bath.
根據本發明之上述目的，提出一種蝕刻設備。此蝕刻設備包含一槽體、一蓋體、一承載元件以及一吸附單元。蓋體位於槽體上方。承載元件位於槽體與蓋體之間。吸附單元可吸收水氣，並位於承載元件與蓋體之間，且吸附單元具有一對應於承載元件上方的下表面。 According to the above object of the present invention, an etching apparatus is proposed. The etching apparatus comprises a tank body, a cover body, a load bearing member and an adsorption unit. The cover is located above the trough. The carrier element is located between the tank body and the cover body. The adsorption unit can absorb moisture and is located between the carrier member and the cover, and the adsorption unit has a lower surface corresponding to the upper portion of the carrier member.
依據本發明之一實施例，上述之吸附單元的材質包含海綿、泡綿與布料。 According to an embodiment of the invention, the material of the adsorption unit comprises a sponge, a foam and a cloth.
依據本發明之另一實施例，上述之吸附單元透過一固定單元固定在蓋體上，且此固定單元被包覆在吸附單元之下表面之內。 According to another embodiment of the present invention, the adsorption unit is fixed to the cover body through a fixing unit, and the fixing unit is covered in the lower surface of the adsorption unit.
依據本發明之又一實施例，上述吸附單元之下表面呈單向傾斜狀。 According to still another embodiment of the present invention, the lower surface of the adsorption unit is unidirectionally inclined.
依據本發明之再一實施例，上述吸附單元之下表面呈開口朝下的拋物線形狀。 According to still another embodiment of the present invention, the lower surface of the adsorption unit has a parabolic shape with an opening facing downward.
依據本發明之再一實施例，上述之承載元件包含複數個滾輪，這些滾輪彼此前後左右排列。 In accordance with still another embodiment of the present invention, the carrier member includes a plurality of rollers that are arranged one behind the other.
依據本發明之再一實施例，上述之吸附單元對應槽體的寬度而延伸設置。 According to still another embodiment of the present invention, the adsorption unit is extended to correspond to a width of the groove.
依據本發明之再一實施例，上述之承載元件為一傳送元件，且吸附單元沿承載元件的一傳送方向而延伸設置。 According to still another embodiment of the present invention, the carrier member is a transport member, and the adsorption unit is extended along a transport direction of the carrier member.
依據本發明之再一實施例，上述之蝕刻設備更包含一排氣裝置，其中此排氣裝置之一開口靠近吸附單元。 According to still another embodiment of the present invention, the etching apparatus further includes an exhaust device, wherein one of the openings of the exhaust device is adjacent to the adsorption unit.
依據本發明之再一實施例，上述之蝕刻設備更包含至少一承接盤，此至少一承接盤位於吸附單元之下表面之一下緣下方。 According to still another embodiment of the present invention, the etching apparatus further includes at least one receiving tray, the at least one receiving tray being located below a lower edge of the lower surface of the adsorption unit.
100‧‧‧蝕刻設備 100‧‧‧ etching equipment
100a‧‧‧蝕刻設備 100a‧‧‧etching equipment
100b‧‧‧蝕刻設備 100b‧‧‧etching equipment
100c‧‧‧蝕刻設備 100c‧‧‧etching equipment
100d‧‧‧蝕刻設備 100d‧‧‧etching equipment
102‧‧‧槽體 102‧‧‧
104‧‧‧蓋體 104‧‧‧ cover
104a‧‧‧蓋體 104a‧‧‧ cover
104b‧‧‧蓋體 104b‧‧‧ cover
104c‧‧‧蓋體 104c‧‧‧ cover
106‧‧‧吸附單元 106‧‧‧Adsorption unit
108‧‧‧下表面 108‧‧‧ lower surface
110‧‧‧蝕刻流體 110‧‧‧etching fluid
112‧‧‧承載元件 112‧‧‧Loading components
114‧‧‧滾輪 114‧‧‧Roller
116‧‧‧蒸氣 116‧‧‧Vapor
118‧‧‧上表面 118‧‧‧ upper surface
120‧‧‧下表面 120‧‧‧lower surface
122‧‧‧排氣裝置 122‧‧‧Exhaust device
124‧‧‧開口 124‧‧‧ openings
126‧‧‧承接盤 126‧‧‧Acceptance tray
128‧‧‧螺絲 128‧‧‧ screws
130‧‧‧傳送方向 130‧‧‧Transfer direction
132‧‧‧寬度 132‧‧‧Width
134‧‧‧液體 134‧‧‧Liquid
為讓本發明之上述和其他目的、特徵、優點與實施例能更明顯易懂，所附圖式之說明如下：第1圖係繪示依照本發明之一實施方式的一種蝕刻設備的裝置示意圖。 The above and other objects, features, advantages and embodiments of the present invention will become more <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; .
第2圖係繪示依照本發明之另一實施方式的一種蝕刻設備的裝置示意圖。 2 is a schematic view showing an apparatus of an etching apparatus according to another embodiment of the present invention.
第3圖係繪示依照本發明之又一實施方式的一種蝕刻 設備的裝置示意圖。 3 is a view showing an etching according to still another embodiment of the present invention. Schematic diagram of the device.
第4圖係繪示依照本發明之再一實施方式的一種蝕刻設備的裝置示意圖。 4 is a schematic view showing an apparatus of an etching apparatus according to still another embodiment of the present invention.
第5圖係繪示依照本發明之再一實施方式的一種蝕刻設備的裝置示意圖。 FIG. 5 is a schematic view showing an apparatus of an etching apparatus according to still another embodiment of the present invention.
請參照第1圖，其係繪示依照本發明之一實施方式的一種蝕刻設備的裝置示意圖。在本實施方式中，蝕刻設備100可適用於進行基板(例如wafer)表面之蝕刻，例如基板之正面、背面、正面與側面、或背面與側面的蝕刻。此蝕刻設備100主要包含槽體102、蓋體104、承載元件112以及吸附單元106。槽體102用以裝盛蝕刻流體110。在一實施例中，蝕刻流體110可例如包含硝酸(HNO3)、氫氟酸(HF)或硫酸(H2SO4)等。此外，在槽體102內之蝕刻流體110之溫度可例如為4℃至6℃。 Please refer to FIG. 1 , which is a schematic diagram of an apparatus for etching apparatus according to an embodiment of the present invention. In the present embodiment, the etching apparatus 100 can be adapted to perform etching of a substrate (eg, wafer) surface, such as front, back, front and side, or back and side etching of the substrate. The etching apparatus 100 mainly includes a tank body 102, a lid body 104, a bearing member 112, and an adsorption unit 106. The tank body 102 is used to hold the etching fluid 110. In an embodiment, the etching fluid 110 may, for example, comprise nitric acid (HNO 3 ), hydrofluoric acid (HF) or sulfuric acid (H 2 SO 4 ), or the like. Further, the temperature of the etching fluid 110 in the tank 102 may be, for example, 4 ° C to 6 ° C.
蓋體104位於槽體102之上方。蓋體104之範圍可涵蓋部分或全部之槽體102。蓋體104之材質可選用耐酸鹼之材料。承載元件112位於槽體102與蓋體104之間。承載元件112可設置在槽體102上，且鄰近於蝕刻流體110之液面，以將進行蝕刻之基板承托在蝕刻流體110之液面位置處。在一實施例中，如第1圖所示，承載元件112可包含複數個滾輪114。這些滾輪114可排列成數排，因此滾輪114可前後、左右排列。在一示範例子中，承載元件112可為傳送元件，以沿傳送方向130將進行蝕刻處理的基板 載送通過槽體102。另外，於實施上，此傳送元件為具有可容納裝載大量基板的設計，而可以大量批次之方式進行蝕刻，當然此時基板可浸入蝕刻流體110之液面下方，以進行其他蝕刻之製程。 The cover 104 is located above the trough 102. The cover 104 may cover some or all of the trough 102. The material of the cover body 104 can be selected from acid and alkali resistant materials. The carrier element 112 is located between the trough body 102 and the cover 104. The carrier element 112 can be disposed on the tank body 102 adjacent to the liquid level of the etching fluid 110 to support the substrate to be etched at the liquid level position of the etching fluid 110. In an embodiment, as shown in FIG. 1, the carrier member 112 can include a plurality of rollers 114. These rollers 114 can be arranged in a plurality of rows, so that the rollers 114 can be arranged one behind the other and left and right. In an exemplary embodiment, the carrier element 112 can be a transfer element to etch the substrate in the transport direction 130 It is carried through the trough 102. In addition, in practice, the transfer element has a design capable of accommodating a large number of substrates, and can be etched in a large number of batches. Of course, the substrate can be immersed under the liquid surface of the etching fluid 110 for other etching processes.
吸附單元106可吸收水氣。吸附單元106可為任何可吸水的材質，且較佳係具有毛細現象。吸附單元106位於承載元件112之上方，且位於蓋體104之下方。因此，吸附單元106之下表面108與承載元件112對應。而且，吸附單元106位於槽體102之上方，且較佳可對應於槽體102之寬度132及/或沿著承載元件112之傳送方向130而延伸設置。因此，吸附單元106可吸收槽體102內之蝕刻流體110所產生的蒸氣116，以避免其凝結而滴落。 The adsorption unit 106 can absorb moisture. The adsorption unit 106 can be any material that can absorb water, and preferably has a capillary phenomenon. The adsorption unit 106 is located above the carrier element 112 and below the cover 104. Therefore, the lower surface 108 of the adsorption unit 106 corresponds to the carrier element 112. Moreover, the adsorption unit 106 is located above the trough 102 and preferably extends corresponding to the width 132 of the trough 102 and/or along the transport direction 130 of the carrier element 112. Therefore, the adsorption unit 106 can absorb the vapor 116 generated by the etching fluid 110 in the tank body 102 to prevent it from condensing and dripping.
在一實施例中，由於蝕刻流體110包含硝酸、氫氟酸或硫酸等，其中硝酸在蝕刻過程中會產生二氧化氮。而二氧化氮遇水會產生亞硝酸，而成酸性溶液。因此，吸附單元106較佳可採用耐強酸與強鹼的材質。吸附單元106可例如包含海綿、泡綿與布料等。在一實施例中，吸附單元106可採用吸酸棉。吸附單元106之材料組成可為聚丙烯(PP)。 In one embodiment, since the etching fluid 110 contains nitric acid, hydrofluoric acid, or sulfuric acid, etc., nitric acid generates nitrogen dioxide during the etching process. Nitrogen dioxide produces nitrous acid in the presence of water and becomes an acidic solution. Therefore, the adsorption unit 106 is preferably made of a material resistant to strong acid and strong alkali. The adsorption unit 106 may, for example, comprise a sponge, a foam, a cloth, or the like. In an embodiment, the adsorption unit 106 can employ acid absorbing cotton. The material composition of the adsorption unit 106 may be polypropylene (PP).
在一實施例中，吸附單元106可固定在蓋體104之下表面120上。如第1圖所示，此實施例之吸附單元106之上表面118並未完全與蓋體104之下表面120貼合，而且吸附單元106之下表面108與蓋體104之下表面120的形狀也不相同。吸附單元106可利用卡固、黏貼與鎖固等 方式固定在蓋體104之下表面120。在一示範例子中，吸附單元106係利用一或多個固定單元，例如第1圖所示之螺絲128，固定在蓋體104之下表面120。在一較佳實施例中，螺絲128等固定單元被包覆在吸附單元106之下表面108內。亦即，固定單元較佳是埋藏在吸附單元106之內，以避免因固定單元外露於吸附單元106之下表面108而成為酸性水氣聚集凝結點，進而可防止蒸氣116凝結成之液體由固定單元處滴落。螺絲128等固定單元之材料可採用鐵氟龍或聚偏二氟乙烯(PVDF)等耐酸鹼材料。 In an embodiment, the adsorption unit 106 can be attached to the lower surface 120 of the cover 104. As shown in FIG. 1, the upper surface 118 of the adsorption unit 106 of this embodiment is not completely adhered to the lower surface 120 of the cover 104, and the shape of the lower surface 108 of the adsorption unit 106 and the lower surface 120 of the cover 104. Not the same. The adsorption unit 106 can utilize the fastening, pasting and locking, etc. The manner is fixed to the lower surface 120 of the cover 104. In an exemplary embodiment, the adsorption unit 106 is secured to the lower surface 120 of the cover 104 using one or more fixed units, such as the screws 128 shown in FIG. In a preferred embodiment, a fixed unit such as a screw 128 is wrapped within the lower surface 108 of the adsorption unit 106. That is, the fixing unit is preferably buried in the adsorption unit 106 to prevent the fixed unit from being exposed to the lower surface 108 of the adsorption unit 106 to become an acidic water-gas accumulation condensation point, thereby preventing the vapor 116 from being condensed into a liquid. Drop at the unit. The material of the fixing unit such as the screw 128 may be an acid-resistant material such as Teflon or polyvinylidene fluoride (PVDF).
在本實施方式中，吸附單元106之下表面108呈傾斜狀，如第1圖所示之雙邊彎曲傾斜狀。在一示範例子中，吸附單元106之下表面108可呈開口朝下的拋物線形狀。在另一些實施例中，吸附單元106之下表面108可呈雙面傾斜狀，如倒V字型狀。對於槽體102之寬度132較大的例子而言，吸附單元106之下表面108之形狀較佳可設計成雙邊彎曲傾斜。而對於槽體102之寬度132較小的例子而言，吸附單元106之下表面108之形狀可設計成單邊傾斜。 In the present embodiment, the lower surface 108 of the adsorption unit 106 is inclined, and is bilaterally curved as shown in Fig. 1. In an exemplary embodiment, the lower surface 108 of the adsorption unit 106 can be in the shape of a parabola with the opening facing downward. In other embodiments, the lower surface 108 of the adsorption unit 106 can be inclined on both sides, such as an inverted V shape. For the example in which the width 132 of the trough 102 is large, the shape of the lower surface 108 of the adsorption unit 106 is preferably designed to be bilaterally curved. For the example in which the width 132 of the trough 102 is small, the shape of the lower surface 108 of the adsorption unit 106 can be designed to be unilaterally inclined.
在蝕刻過程中，吸附單元106可吸取蝕刻流體110之蒸氣116。蒸氣116被吸收在吸附單元106後，會凝結成液體134。當吸附單元106內所吸附的液體134達到飽和時，甚至未達飽和的狀況下，這些液體134會透過吸附單元106之毛細現象或地心引力之關係，而順著吸附單元106之彎曲傾斜度，被導流至槽體102兩側。在此實施方式中， 液體134係導流至槽體102內。藉由此一設計，可有效避免蝕刻流體110之蒸氣116經凝結所產生之液體134滴落在下方槽體102內的基板表面上。 The adsorption unit 106 can draw the vapor 116 of the etching fluid 110 during the etching process. After the vapor 116 is absorbed in the adsorption unit 106, it condenses into a liquid 134. When the liquid 134 adsorbed in the adsorption unit 106 reaches saturation, even if the liquid 134 is not saturated, the liquid 134 may pass through the capillary phenomenon or the gravity of the adsorption unit 106, and the bending inclination along the adsorption unit 106. , is guided to both sides of the tank body 102. In this embodiment, Liquid 134 is diverted into the tank 102. With this design, it is possible to effectively prevent the liquid 134 generated by the condensation of the vapor 116 of the etching fluid 110 from dripping on the surface of the substrate in the lower tank 102.
請參照第2圖，其係繪示依照本發明之另一實施方式的一種蝕刻設備的裝置示意圖。在此實施方式中，蝕刻設備100a之架構大致上與上述實施方式之蝕刻設備100的架構相同，二者的差異在於，蝕刻設備100a更包含排氣裝置122。 Please refer to FIG. 2, which is a schematic diagram of an apparatus for etching apparatus according to another embodiment of the present invention. In this embodiment, the structure of the etching apparatus 100a is substantially the same as that of the etching apparatus 100 of the above embodiment, with the difference that the etching apparatus 100a further includes the exhausting means 122.
在一實施例中，蝕刻設備100a之排氣裝置122可設置在蓋體104a上。在另一實施例中，蝕刻設備100a之排氣裝置122可非設於蓋體104a。然，排氣裝置122之開口124較佳係設於蓋體104a上，且靠近吸附單元106。藉由排氣裝置122的抽氣，不僅可將蝕刻設備100a內濕氣較重的氣體排出，更可造成氣體流動。如此一來，可有效延長吸附單元106內之液體134達到飽和的時間，而可進一步避免液體134在尚未導流至槽體102兩側時即往下滴落。 In an embodiment, the venting device 122 of the etching apparatus 100a may be disposed on the cover 104a. In another embodiment, the exhaust device 122 of the etching apparatus 100a may not be disposed on the cover 104a. The opening 124 of the venting device 122 is preferably attached to the cover 104a and adjacent to the adsorption unit 106. By pumping the exhaust device 122, not only the gas having a relatively heavy moisture in the etching apparatus 100a but also the gas flow can be caused. In this way, the time for the liquid 134 in the adsorption unit 106 to reach saturation can be effectively extended, and the liquid 134 can be further prevented from dropping downward when not being guided to both sides of the tank body 102.
請參照第3圖，其係繪示依照本發明之又一實施方式的一種蝕刻設備的裝置示意圖。在此實施方式中，蝕刻設備100b之架構大致上與上述實施方式之蝕刻設備100的架構相同，二者的差異在於，蝕刻設備100b之蓋體104b的下表面120與吸附單元106之上表面118貼合。換言之，蓋體104b之下表面120呈彎曲傾斜狀。此外，蓋體104b之下表面120的形狀大致上可與吸附單元106之下表面108的形狀相同。 Please refer to FIG. 3, which is a schematic diagram of an apparatus for etching apparatus according to still another embodiment of the present invention. In this embodiment, the structure of the etching apparatus 100b is substantially the same as that of the etching apparatus 100 of the above embodiment, the difference being that the lower surface 120 of the cover 104b of the etching apparatus 100b and the upper surface 118 of the adsorption unit 106 fit. In other words, the lower surface 120 of the cover 104b is curved and inclined. Further, the shape of the lower surface 120 of the cover 104b may be substantially the same as the shape of the lower surface 108 of the adsorption unit 106.
在本實施方式的另一些實施例中，蓋體104b之下表面120的形狀可根據需求而設計成單邊傾斜狀、雙邊彎曲傾斜狀、開口朝下的拋物線形狀、或雙面傾斜狀，如倒V字型狀。 In other embodiments of the present embodiment, the shape of the lower surface 120 of the cover 104b may be designed to be unilaterally inclined, bilaterally curved, open, parabolic, or double-sided, as desired. Inverted V shape.
請參照第4圖，其係繪示依照本發明之再一實施方式的一種蝕刻設備的裝置示意圖。在此實施方式中，蝕刻設備100c之架構大致上與上述實施方式之蝕刻設備100的架構相同，二者的差異在於，蝕刻設備100c更包含有一或多個承接盤126。 Please refer to FIG. 4, which is a schematic diagram of an apparatus for etching apparatus according to still another embodiment of the present invention. In this embodiment, the structure of the etching apparatus 100c is substantially the same as that of the etching apparatus 100 of the above embodiment, with the difference that the etching apparatus 100c further includes one or more receiving trays 126.
承接盤126可設置在吸附單元106向下傾斜之下緣的下方，以承接從吸附單元106流下的液體134。因此，承接盤126之數量可根據吸附單元106之下表面108的傾斜形狀而調整。舉例而言，若吸附單元106之下表面108呈雙邊傾斜，蝕刻設備100c可包含兩個承載盤126分別設於吸附單元106之二傾斜邊之下緣的下方。 The receiving tray 126 may be disposed below the downwardly inclined lower edge of the adsorption unit 106 to receive the liquid 134 flowing down from the adsorption unit 106. Therefore, the number of receiving trays 126 can be adjusted according to the inclined shape of the lower surface 108 of the adsorption unit 106. For example, if the lower surface 108 of the adsorption unit 106 is bilaterally inclined, the etching apparatus 100c may include two carrier trays 126 respectively disposed below the lower edges of the two inclined sides of the adsorption unit 106.
請參照第5圖，其係繪示依照本發明之再一實施方式的一種蝕刻設備的裝置示意圖。在此實施方式中，蝕刻設備100d之架構大致上與上述實施方式之蝕刻設備100的架構相同，二者的差異在於，蝕刻設備100d之蓋體104d之下表面120與吸附單元108之下表面108均呈單向傾斜。此外，吸附單元108之上表面118與蓋體104c之下表面120貼合。 Please refer to FIG. 5, which is a schematic diagram of an apparatus for etching apparatus according to still another embodiment of the present invention. In this embodiment, the structure of the etching apparatus 100d is substantially the same as that of the etching apparatus 100 of the above embodiment, and the difference is that the lower surface 120 of the cover 104d of the etching apparatus 100d and the lower surface 108 of the adsorption unit 108 Both are unidirectionally inclined. Further, the upper surface 118 of the adsorption unit 108 is attached to the lower surface 120 of the cover 104c.
由上述之實施方式可知，本發明之一優點就是因為蝕刻設備之蓋體與槽體之間設有可吸附水氣之吸附單元， 而可避免蝕刻液蒸氣凝結於蓋體上，並可進一步避免凝結之液體滴落在下方進行蝕刻之基板表面上。因此，可大幅提升蝕刻製程的良率，而可有效降低基板重工的比例，進而可確保品質、提升產能，減低製程成本。 It can be seen from the above embodiments that one of the advantages of the present invention is that an adsorption unit capable of adsorbing moisture is disposed between the cover body and the tank body of the etching apparatus. The etching liquid vapor can be prevented from condensing on the cover body, and the condensed liquid can be further prevented from dripping on the surface of the substrate which is etched under. Therefore, the yield of the etching process can be greatly improved, and the ratio of the substrate rework can be effectively reduced, thereby ensuring quality, increasing productivity, and reducing process cost.
由上述之實施方式可知，本發明之另一優點就是因為吸附單元之下表面可呈傾斜狀，例如呈單向傾斜、雙邊彎曲傾斜、雙面傾斜或呈開口朝下的拋物線形狀，因此可利用毛細現象將吸附單元所吸附之蝕刻液體導流至槽體之一側或兩側。故，可更有效地防止蝕刻液滴落在槽體內之基板上。 It can be seen from the above embodiments that another advantage of the present invention is that the lower surface of the adsorption unit can be inclined, for example, unidirectionally inclined, bilaterally curved, double-sidedly inclined or open-faced parabolic shape, so that it can be utilized. The capillary phenomenon conducts the etching liquid adsorbed by the adsorption unit to one side or both sides of the tank body. Therefore, it is possible to more effectively prevent the etching droplets from falling on the substrate in the bath.
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何在此技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 While the present invention has been described above by way of example, it is not intended to be construed as a limitation of the scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.
100‧‧‧蝕刻設備 100‧‧‧ etching equipment
102‧‧‧槽體 102‧‧‧
104‧‧‧蓋體 104‧‧‧ cover
106‧‧‧吸附單元 106‧‧‧Adsorption unit
108‧‧‧下表面 108‧‧‧ lower surface
110‧‧‧蝕刻流體 110‧‧‧etching fluid
112‧‧‧承載元件 112‧‧‧Loading components
114‧‧‧滾輪 114‧‧‧Roller
116‧‧‧蒸氣 116‧‧‧Vapor
118‧‧‧上表面 118‧‧‧ upper surface
120‧‧‧下表面 120‧‧‧lower surface
128‧‧‧螺絲 128‧‧‧ screws
130‧‧‧傳送方向 130‧‧‧Transfer direction
132‧‧‧寬度 132‧‧‧Width
134‧‧‧液體 134‧‧‧Liquid
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW102117234A TWI518769B (en) | 2013-05-15 | 2013-05-15 | Etching apparatus |
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| Application Number | Priority Date | Filing Date | Title |
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| TW102117234A TWI518769B (en) | 2013-05-15 | 2013-05-15 | Etching apparatus |
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| Publication Number | Publication Date |
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| TW201443989A TW201443989A (en) | 2014-11-16 |
| TWI518769B true TWI518769B (en) | 2016-01-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| TW102117234A TWI518769B (en) | 2013-05-15 | 2013-05-15 | Etching apparatus |
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| TW (1) | TWI518769B (en) |
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