TWI514436B - - Google Patents

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Publication number
TWI514436B
TWI514436B TW103117718A TW103117718A TWI514436B TW I514436 B TWI514436 B TW I514436B TW 103117718 A TW103117718 A TW 103117718A TW 103117718 A TW103117718 A TW 103117718A TW I514436 B TWI514436 B TW I514436B
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TW
Taiwan
Application number
TW103117718A
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TW201508806A (zh
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Publication of TWI514436B publication Critical patent/TWI514436B/zh

Links

TW103117718A 2013-05-31 2014-05-21 等離子體處理裝置 TW201508806A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310214025.7A CN104217914B (zh) 2013-05-31 2013-05-31 等离子体处理装置

Publications (2)

Publication Number Publication Date
TW201508806A TW201508806A (zh) 2015-03-01
TWI514436B true TWI514436B (zh) 2015-12-21

Family

ID=52099298

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103117718A TW201508806A (zh) 2013-05-31 2014-05-21 等離子體處理裝置

Country Status (2)

Country Link
CN (1) CN104217914B (zh)
TW (1) TW201508806A (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI741439B (zh) * 2018-12-17 2021-10-01 大陸商中微半導體設備（上海）股份有限公司 電漿處理裝置
TWI777462B (zh) * 2020-05-26 2022-09-11 大陸商中微半導體設備（上海）股份有限公司 下電極組件、其安裝方法及電漿處理裝置

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105789006B (zh) * 2014-12-26 2017-10-17 中微半导体设备(上海)有限公司 一种高度可调节的聚焦环及其高度调节方法
JP6539113B2 (ja) 2015-05-28 2019-07-03 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
CN106611691B (zh) * 2015-10-26 2018-10-12 中微半导体设备(上海)有限公司 多频脉冲等离子体处理装置及其处理方法和清洗方法
CN107146753B (zh) * 2016-03-01 2020-03-31 中微半导体设备(上海)股份有限公司 一种等离子体处理装置
CN108074787A (zh) * 2016-11-10 2018-05-25 北京北方华创微电子装备有限公司 下电极结构及半导体加工设备
CN107779845A (zh) * 2017-10-30 2018-03-09 武汉华星光电半导体显示技术有限公司 化学气相沉积设备及成膜方法
CN111383887A (zh) * 2018-12-27 2020-07-07 江苏鲁汶仪器有限公司 一种改善等离子体刻蚀均匀性的装置及方法
CN110379701A (zh) * 2019-07-24 2019-10-25 沈阳拓荆科技有限公司 具有可调射频组件的晶圆支撑座
CN114664622B (zh) * 2020-12-23 2024-07-05 中微半导体设备(上海)股份有限公司 一种等离子体处理装置及调节方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200731353A (en) * 2005-03-21 2007-08-16 Tokyo Electron Ltd A deposition system and method
TW200811905A (en) * 2006-02-15 2008-03-01 Lam Res Corp Plasma processing reactor with multiple capacitive and inductive power sources
US20080241420A1 (en) * 2007-03-30 2008-10-02 Rajinder Dhindsa Method and apparatus for dc voltage control on rf-powered electrode
TW201031280A (en) * 2008-07-23 2010-08-16 Applied Materials Inc Workpiece support for a plasma reactor with controlled apportionment of RF power to a process kit ring
US20110294303A1 (en) * 2010-05-12 2011-12-01 Applied Materials, Inc. Confined process volume pecvd chamber

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6232236B1 (en) * 1999-08-03 2001-05-15 Applied Materials, Inc. Apparatus and method for controlling plasma uniformity in a semiconductor wafer processing system

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200731353A (en) * 2005-03-21 2007-08-16 Tokyo Electron Ltd A deposition system and method
TW200811905A (en) * 2006-02-15 2008-03-01 Lam Res Corp Plasma processing reactor with multiple capacitive and inductive power sources
US20080241420A1 (en) * 2007-03-30 2008-10-02 Rajinder Dhindsa Method and apparatus for dc voltage control on rf-powered electrode
TW201031280A (en) * 2008-07-23 2010-08-16 Applied Materials Inc Workpiece support for a plasma reactor with controlled apportionment of RF power to a process kit ring
US20110294303A1 (en) * 2010-05-12 2011-12-01 Applied Materials, Inc. Confined process volume pecvd chamber

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI741439B (zh) * 2018-12-17 2021-10-01 大陸商中微半導體設備（上海）股份有限公司 電漿處理裝置
TWI777462B (zh) * 2020-05-26 2022-09-11 大陸商中微半導體設備（上海）股份有限公司 下電極組件、其安裝方法及電漿處理裝置

Also Published As

Publication number Publication date
TW201508806A (zh) 2015-03-01
CN104217914B (zh) 2016-12-28
CN104217914A (zh) 2014-12-17

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