TWI513496B - - Google Patents

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Publication number
TWI513496B
TWI513496B TW103136432A TW103136432A TWI513496B TW I513496 B TWI513496 B TW I513496B TW 103136432 A TW103136432 A TW 103136432A TW 103136432 A TW103136432 A TW 103136432A TW I513496 B TWI513496 B TW I513496B
Authority
TW
Taiwan
Application number
TW103136432A
Other languages
Chinese (zh)
Other versions
TW201529141A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of TW201529141A publication Critical patent/TW201529141A/en
Application granted granted Critical
Publication of TWI513496B publication Critical patent/TWI513496B/zh

Links

TW103136432A 2013-10-23 2014-10-22 Self-cleaning vacuum processing chamber TW201529141A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310505301.5A CN104576305A (en) 2013-10-23 2013-10-23 Self-cleaning vacuum treatment chamber

Publications (2)

Publication Number Publication Date
TW201529141A TW201529141A (en) 2015-08-01
TWI513496B true TWI513496B (en) 2015-12-21

Family

ID=53092097

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103136432A TW201529141A (en) 2013-10-23 2014-10-22 Self-cleaning vacuum processing chamber

Country Status (2)

Country Link
CN (1) CN104576305A (en)
TW (1) TW201529141A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111364027A (en) * 2018-12-25 2020-07-03 广东聚华印刷显示技术有限公司 Atomic layer deposition chamber component, preparation method thereof and atomic layer deposition equipment
CN110117779A (en) * 2019-04-30 2019-08-13 信利(仁寿)高端显示科技有限公司 A kind of regeneration method and device of vacuum coater inner part
CN111524785B (en) * 2020-06-03 2023-03-14 上海邦芯半导体科技有限公司 Processing method of dry etching cavity
CN113201718B (en) * 2021-04-01 2022-07-12 深圳仕上电子科技有限公司 Plating chamber inner wall component with sacrificial layer, preparation method and cleaning method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1739810A (en) * 2005-09-16 2006-03-01 中国科学院上海硅酸盐研究所 A kind of hydrion injects the method that improves bioactivity of nanometer titania coating
CN101838794A (en) * 2010-05-31 2010-09-22 苏州羿日新能源有限公司 Method for preparing titania film by using gas flow reaction sputtering under middle gas pressure and method for preparing solar cell
TW201324577A (en) * 2011-12-08 2013-06-16 Advanced Micro Fab Equip Inc Plasma processing device and edge ring applicable to the plasma processing device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10340889A (en) * 1997-06-06 1998-12-22 Hitachi Ltd Semiconductor manufacturing equipment
JP4661753B2 (en) * 2006-09-29 2011-03-30 東京エレクトロン株式会社 Substrate processing method, cleaning method, and storage medium
JP2009188257A (en) * 2008-02-07 2009-08-20 Tokyo Electron Ltd Plasma etching method, plasma etching apparatus, and storage medium

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1739810A (en) * 2005-09-16 2006-03-01 中国科学院上海硅酸盐研究所 A kind of hydrion injects the method that improves bioactivity of nanometer titania coating
CN101838794A (en) * 2010-05-31 2010-09-22 苏州羿日新能源有限公司 Method for preparing titania film by using gas flow reaction sputtering under middle gas pressure and method for preparing solar cell
TW201324577A (en) * 2011-12-08 2013-06-16 Advanced Micro Fab Equip Inc Plasma processing device and edge ring applicable to the plasma processing device

Also Published As

Publication number Publication date
CN104576305A (en) 2015-04-29
TW201529141A (en) 2015-08-01

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