TWI512077B - Thermo-setting double-sided adhesive film excellent in adhesive property and heat resistance - Google Patents

Thermo-setting double-sided adhesive film excellent in adhesive property and heat resistance Download PDF

Info

Publication number
TWI512077B
TWI512077B TW100100300A TW100100300A TWI512077B TW I512077 B TWI512077 B TW I512077B TW 100100300 A TW100100300 A TW 100100300A TW 100100300 A TW100100300 A TW 100100300A TW I512077 B TWI512077 B TW I512077B
Authority
TW
Taiwan
Prior art keywords
weight
adhesive film
film
parts
adhesive
Prior art date
Application number
TW100100300A
Other languages
Chinese (zh)
Other versions
TW201200573A (en
Inventor
Woo Seok Kim
Sang Pil Kim
Ki Jeong Moon
Hyun Min Shin
Nam Ik Hwang
Original Assignee
Toray Advanced Mat Korea Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toray Advanced Mat Korea Inc filed Critical Toray Advanced Mat Korea Inc
Publication of TW201200573A publication Critical patent/TW201200573A/en
Application granted granted Critical
Publication of TWI512077B publication Critical patent/TWI512077B/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J161/00Adhesives based on condensation polymers of aldehydes or ketones; Adhesives based on derivatives of such polymers
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22Plastics; Metallised plastics
    • C09J7/25Plastics; Metallised plastics based on macromolecular compounds obtained otherwise than by reactions involving only carbon-to-carbon unsaturated bonds
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/30Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35Heat-activated
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/30Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/304Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being heat-activatable, i.e. not tacky at temperatures inferior to 30°C
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/40Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32135Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)

Description

黏合性質及耐熱性優異的熱固性雙面黏合性薄膜Thermosetting double-sided adhesive film excellent in adhesion and heat resistance 發明領域Field of invention

此揭示內容整體而言係有關於一用於一堆疊CSP(晶片級封裝)之黏合性薄膜,更具體地係有關於一具有優異黏合性質與耐熱性的熱固性雙面黏合性薄膜,其係為用於為電線獲得空間、預防電子干擾、與提供將被堆疊之晶粒間之黏著的熱固性雙面黏合性薄膜,其係具有優異黏合性質與耐熱性,以及其係可預防於高溫加工時由該封裝內部吸收之含水量之高水蒸氣壓造成的封裝之界面剝離或爆米花爆裂現象之問題。The disclosure is generally directed to an adhesive film for a stacked CSP (wafer level package), and more particularly to a thermosetting double-sided adhesive film having excellent adhesion properties and heat resistance. A thermosetting double-sided adhesive film for obtaining space for electric wires, preventing electronic interference, and providing adhesion between crystal grains to be stacked, which has excellent adhesive properties and heat resistance, and is capable of preventing high temperature processing The problem of interfacial peeling or popcorn bursting of the package caused by the high water vapor pressure of the water content absorbed inside the package.

發明背景Background of the invention

最近,一CSP(晶片級封裝)係因半導體晶片之一高整合性與微型化之新趨勢而被發展。如同可自其之名稱所得知,於此類之一CSP中,該晶片尺寸係被視為幾乎相同於該封裝尺寸。Recently, a CSP (wafer level package) has been developed due to a new trend of high integration and miniaturization of semiconductor wafers. As can be seen from its name, in one such CSP, the wafer size is considered to be nearly identical to the package size.

作為一當前封裝趨勢之一部分,一堆疊CSP係為較先進之封裝之一。換言之,一個或多個晶片係被安裝於一晶片之上方,藉此遠較傳統封裝為高之容量係可被容納於一幾乎相同尺寸之封裝內。該堆疊CSP具有一增加容量之優點,且有減小一記憶體之尺寸之優點以便藉由將一薄膜核心基板材料和晶背研磨技術組合至傳統BGA表面安裝技術而使電子裝置之功能加倍。由於如此之技術,其係有可能有效地使用一主機板之面積且減少其之重量與尺寸,因此最終達到於一系統層次上降低成本之目標。另外,由於該堆疊CSP使在市場上之記憶體係有可能連接至許多元件,其係提供一更降低整個系統之成本的方法。As part of a current package trend, a stacked CSP is one of the more advanced packages. In other words, one or more of the wafers are mounted over a wafer, whereby a much higher capacity than conventional packages can be housed in a package of nearly the same size. The stacked CSP has the advantage of increased capacity and has the advantage of reducing the size of a memory to double the functionality of the electronic device by combining a thin film core substrate material and crystal back grinding technology to conventional BGA surface mount technology. Due to such technology, it is possible to effectively use the area of a motherboard and reduce its weight and size, thus ultimately achieving the goal of reducing costs at a system level. In addition, since the stacked CSP makes it possible to connect to many components in the memory system on the market, it provides a way to reduce the cost of the entire system.

隨著晶片尺寸變得較小,於晶片與基板之間之空隙係變得更小,且發展一符合新封裝之黏合劑係亦成為必需的。於是,各種新技術係正在被發展。雖然糊漿係被主要地使用於先前技術,呈一黏合性薄膜之形式之新技術係因為生產力與樹脂滲出問題而正在被發展。As the wafer size becomes smaller, the gap between the wafer and the substrate becomes smaller, and it is also necessary to develop a binder system that conforms to the new package. As a result, various new technology systems are being developed. Although syrup is mainly used in the prior art, new techniques in the form of an adhesive film are being developed due to productivity and resin bleeding problems.

目前,大部分封裝係在未顧及其基板下被轉換成一CSP類型,以及多數的組裝公司係積極地專注於發展環境友善產品之一部分的無鉛產品。然而,此類產品與一傳統鉛銲料比較,係具有一較高熔點(約220℃)之缺點。為了克服此一缺點,由於其他使用於組裝之產品亦應克服由此類高溫所造成之爆米花爆裂或其他封裝問題,其需求之可靠度標準係變得較高。例如,雖然當一傳統焊料被使用時,其熔點約220℃係相對地低,但由於一目前的無鉛焊料之熔點係較高約260℃,該封裝內部吸收之水含量可能由於此一高溫加工期間之高溫而形成一高水蒸氣壓,其係因而造成諸如一封裝之爆米花爆裂現象或界面剝離等問題。Currently, most packages are converted to a CSP type without regard to their substrates, and most assembly companies are actively focusing on the development of lead-free products that are part of environmentally friendly products. However, such products have the disadvantage of having a higher melting point (about 220 ° C) than a conventional lead solder. In order to overcome this shortcoming, since other products used for assembly should also overcome popcorn burst or other packaging problems caused by such high temperatures, the reliability standard of the demand becomes higher. For example, although a conventional solder is used, its melting point is relatively low at about 220 ° C, but since the melting point of a current lead-free solder is about 260 ° C higher, the water content absorbed inside the package may be due to this high temperature processing. The high temperature during the formation of a high water vapor pressure causes problems such as popping of a package of popcorn or interfacial peeling.

因此,一可克服以上提及問題之黏合性薄膜的發展係有一急迫之需要。Therefore, there is an urgent need for the development of an adhesive film that overcomes the above mentioned problems.

發明概要Summary of invention

本揭示內容係提供一具有優異黏合性質與耐熱性之熱固性雙面黏合性薄膜,其係具有優異黏合性質與耐熱性,且其可預防諸如於高溫加工時由一封裝內部吸收之含水量之高水蒸氣壓造成的該封裝之界面剝離或爆米花爆裂現象之問題。The present disclosure provides a thermosetting double-sided adhesive film having excellent adhesive properties and heat resistance, which has excellent adhesive properties and heat resistance, and which can prevent high water content absorbed by a package interior such as high temperature processing. The problem of interface peeling or popcorn bursting of the package caused by water vapor pressure.

由本揭示內容之下列詳細說明,本揭示內容之許多目的與優點將變得清楚。Many objects and advantages of the present disclosure will become apparent from the Detailed Description.

以上目的係可由一具有優異黏合性質與耐熱性之熱固性雙面黏合性薄膜達成,該熱固性雙面黏合性薄膜係一位於晶粒之間之黏合性薄膜,且具有塗佈於一聚醯亞胺薄膜二側上之黏合性層,其中該黏合性層含有每100重量份之含有1-10wt%之一羧基的NBR中,5-200重量份之一環氧樹脂、50-200重量份之一酚樹脂、與2-40重量份之一種或多種選自胺系或酸酐系固化劑之固化劑,以及其中該酚樹脂係具有一依照一環球法量測之60-120℃之軟化點。The above object can be achieved by a thermosetting double-sided adhesive film having excellent adhesive properties and heat resistance, the thermosetting double-sided adhesive film being an adhesive film between crystal grains and having a coating on a polyimine. An adhesive layer on two sides of the film, wherein the adhesive layer contains one part of 5-200 parts by weight of epoxy resin, 50-200 parts by weight per 100 parts by weight of NBR containing 1-10% by weight of one carboxyl group. The phenol resin, and 2 to 40 parts by weight of one or more curing agents selected from the group consisting of amine-based or acid-based curing agents, and wherein the phenol resin has a softening point of 60 to 120 ° C as measured by a ring and ball method.

在此,於125℃/1.5kg/1秒之條件下接合一晶粒(2cm×2cm)與另一晶粒(2cm×2cm),且接續一固化加工(175℃/1小時)之後,該黏合性薄膜係具有在室溫下為5kg或更高與在260℃下為100g或更高之晶粒剪應力。Here, after bonding one crystal grain (2 cm × 2 cm) to another crystal grain (2 cm × 2 cm) at 125 ° C / 1.5 kg / 1 second, and after a curing process (175 ° C / 1 hour), the The adhesive film has a grain shear stress of 5 kg or more at room temperature and 100 g or more at 260 °C.

本揭示內容之作用The role of this disclosure

本揭示內容具有提供優異黏合性質與耐熱性、與預防諸如於高溫加工時由該封裝內部吸收之含水量之高水蒸氣壓造成之一封裝之界面剝離或爆米花爆裂現象之問題等作用。The present disclosure has the effects of providing excellent adhesion properties and heat resistance, and preventing the problem of interfacial peeling or popcorn bursting of one of the packages caused by high water vapor pressure such as water content absorbed inside the package during high temperature processing.

圖式簡單說明Simple illustration

第1圖係一堆疊之晶片級封裝的斷面圖;第2圖係一依照本揭示內容之一具體實施例之於晶粒之間之黏合性薄膜的斷面圖。1 is a cross-sectional view of a stacked wafer level package; and FIG. 2 is a cross-sectional view of an adhesive film between the dies in accordance with an embodiment of the present disclosure.

1...電線1. . . wire

2...模製化合物2. . . Molding compound

3...黏合性薄膜3. . . Adhesive film

4...銲料遮罩4. . . Solder mask

5...式樣5. . . style

6...基板6. . . Substrate

7...子晶粒7. . . Sub-grain

8...母晶粒8. . . Mother grain

10...聚醯亞胺薄膜10. . . Polyimine film

20...黏合性層20. . . Adhesive layer

30...剝離薄膜30. . . Release film

詳細說明Detailed description

以下,本揭示內容之數個較佳具體實施例將參考其附加圖式被詳細地描述。本揭示內容之較佳具體實施例之詳細描述係應被理解為僅供描述,因此,於本揭示內容之精神與範疇內之許多變化與調整對於熟習此技藝者將是明顯的。Hereinafter, several preferred embodiments of the present disclosure will be described in detail with reference to the appended drawings. The detailed description of the preferred embodiments of the present disclosure is to be understood as the description of the invention, and the various changes and modifications within the spirit and scope of the disclosure will be apparent to those skilled in the art.

依照本揭示內容之一具體實施例,第1圖係一堆疊晶片級封裝之斷面圖,以及第2圖係於晶粒之間之一黏合性薄膜的斷面圖。In accordance with an embodiment of the present disclosure, FIG. 1 is a cross-sectional view of a stacked wafer level package, and FIG. 2 is a cross-sectional view of an adhesive film between the dies.

如同可自第2圖所察覺,一依照本揭示內容之具有優異黏合性質與耐熱性之熱固性雙面黏合性薄膜係具有一塗佈於一聚醯亞胺薄膜(10)二側上之黏合性層(20)。在此,每一黏合性層(20)包含含有一羧基之NBR、一環氧樹脂、一酚樹脂、一固化劑等等,且該黏合性層(20)之頂面係疊層一剝離薄膜(30)。As can be seen from Fig. 2, a thermosetting double-sided adhesive film having excellent adhesive properties and heat resistance according to the present disclosure has an adhesive property coated on both sides of a polyimide film (10). Layer (20). Here, each adhesive layer (20) comprises a NBR containing a carboxyl group, an epoxy resin, a phenol resin, a curing agent, etc., and the top surface of the adhesive layer (20) is laminated with a release film. (30).

該用於該依照本揭示內容之具有優異黏合性質與耐熱性之熱固性雙面黏合性薄膜之聚醯亞胺薄膜(10)之厚度可依照一封裝之需求高度而被自由地挑選。The thickness of the polyimide film (10) used for the thermosetting double-sided adhesive film having excellent adhesive properties and heat resistance according to the present disclosure can be freely selected in accordance with the required height of a package.

該依照本揭示內容之具有優異黏合性質與耐熱性之熱固性雙面黏合性薄膜之黏合性層(20)包含每100重量份的NBR中,5-200重量份之一多官能性環氧樹脂、與5-200重量份之一多官能性酚樹脂,以及可附加地包含一固化劑、一橡膠交聯劑與其他添加劑。The adhesive layer (20) of the thermosetting double-sided adhesive film having excellent adhesive properties and heat resistance according to the present disclosure contains 5 to 200 parts by weight of a polyfunctional epoxy resin per 100 parts by weight of the NBR. And 5 to 200 parts by weight of the polyfunctional phenol resin, and may additionally comprise a curing agent, a rubber crosslinking agent and other additives.

該含有羧基之NBR係具有一3,000-200,000之重量平均分子量,以及含有20-50wt%之丙烯腈與1-10wt%之羧基。於此情況下,若該重量平均分子量低於3,000,則在高溫下之黏合強度成為不足,而若高於200,000,則在一溶劑中之溶解度減小,可加工性係會於該溶液之準備時因增加的黏性而下降,且在室溫之黏合強度亦減小。若該NBR含有少於20wt%之丙烯腈,則在一溶劑中之溶解度減小,以及若該NBR含有多於50wt%之丙烯腈,則該電氣絕緣變得更差。另外,若該NBR含有1-10wt%之羧基,該NBR與其他樹脂和黏合性基板之間之鍵結成為較容易,因此也增加其之黏合強度。不具有一羧基之NBR將具有差的黏合強度。The carboxyl group-containing NBR has a weight average molecular weight of from 3,000 to 200,000, and contains 20 to 50% by weight of acrylonitrile and 1 to 10% by weight of a carboxyl group. In this case, if the weight average molecular weight is less than 3,000, the adhesive strength at a high temperature becomes insufficient, and if it is more than 200,000, the solubility in a solvent is decreased, and workability is prepared in the solution. The time decreases due to increased viscosity, and the bond strength at room temperature also decreases. If the NBR contains less than 20% by weight of acrylonitrile, the solubility in a solvent is reduced, and if the NBR contains more than 50% by weight of acrylonitrile, the electrical insulation becomes worse. Further, if the NBR contains 1-10% by weight of a carboxyl group, the bonding between the NBR and other resins and the adhesive substrate becomes easier, and thus the bonding strength thereof is also increased. An NBR that does not have a carboxyl group will have poor adhesion strength.

再者,每100重量份之NBR係較佳地含有5-200重量份之環氧樹脂,且此類環氧樹脂可包含雙酚A型環氧樹脂、雙酚F型環氧樹脂,與酚醛環氧樹脂。該環氧樹脂之當量(g/eq)可為100-1,000。Further, the NBR system preferably contains 5 to 200 parts by weight of the epoxy resin per 100 parts by weight of the NBR, and the epoxy resin may comprise a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, and a phenolic aldehyde. Epoxy resin. The equivalent weight (g/eq) of the epoxy resin may be from 100 to 1,000.

此外,每100重量份之NBR係較佳地含有50-200重量份之酚樹脂,且若該酚樹脂係多於200重量份,則該黏合性層變成非常脆而其係幾乎不可能使該黏合性層以一薄膜之形式製造。另外,酚樹脂較佳地具有一200-900之分子量,且其較佳地使用一具有一依照一環球法量測得一60-120℃之軟化點之酚樹脂。若使用一具有一低於60℃之軟化點之酚樹脂,可能發生如同在糊漿的情況中發生的樹脂滲出,相反地,若該軟化點過高,其係必需應用非常高的溫度以連結該黏合性薄膜至一晶粒上,因此降低黏合強度。於是,使用一具有適當軟化點(60-120℃)之樹脂係需要的。Further, the NBR system preferably contains 50 to 200 parts by weight of the phenol resin per 100 parts by weight, and if the phenol resin is more than 200 parts by weight, the adhesive layer becomes very brittle and it is almost impossible to make the The adhesive layer is made in the form of a film. Further, the phenol resin preferably has a molecular weight of from 200 to 900, and it preferably uses a phenol resin having a softening point of 60 to 120 ° C as measured by a ring and ball method. If a phenol resin having a softening point lower than 60 ° C is used, resin bleed may occur as in the case of a paste, and conversely, if the softening point is too high, it is necessary to apply a very high temperature to link The adhesive film is on a die, thereby reducing the bond strength. Thus, a resin having a suitable softening point (60-120 ° C) is required.

關於固化劑,其係較佳地分別地或共同地使用胺系固化劑與酸酐系固化劑,於每100重量份之NBR中,有2-40重量份之固化劑。另外,有機或無機的過氧化物可以每100重量份之NBR有1-5重量份而被使用,以作為該橡膠交聯劑。As the curing agent, it is preferred to use an amine curing agent and an acid anhydride curing agent separately or in combination, and to have 2 to 40 parts by weight of a curing agent per 100 parts by weight of NBR. Further, the organic or inorganic peroxide may be used in an amount of from 1 to 5 parts by weight per 100 parts by weight of the NBR as the rubber crosslinking agent.

該備置有以上組成物之黏合性層(20)係具有一200-1,500CPS之黏度,且係施用至一聚醯亞胺薄膜(10)之二側上,以使得該黏合性層於乾燥後之厚度可為10-30μm。之後,該帶有該黏合性層(20)塗佈於其上之聚醯亞胺薄膜(10)係在50-180℃被固化達2-10分鐘,接著係被塗佈一剝離薄膜(30)以生產一黏合性薄膜。該黏合性層之厚度可依照一封裝之需要高度被適當地變化。The adhesive layer (20) provided with the above composition has a viscosity of 200-1,500 CPS and is applied to both sides of a polyimide film (10) so that the adhesive layer is dried. The thickness can be 10-30 μm. Thereafter, the polyimide film (10) coated with the adhesive layer (20) is cured at 50-180 ° C for 2-10 minutes, followed by coating a release film (30). ) to produce an adhesive film. The thickness of the adhesive layer can be appropriately varied in accordance with the height required for a package.

雖然該用於該依照本揭示內容之具有優異黏合性質與耐熱性之熱固性雙面黏合性薄膜之剝離薄膜(30)的厚度不具有任何特別的限制,其一般較佳地具有38μm。此類被使用之剝離薄膜之範例可包括聚乙烯、聚對苯二甲酸乙二酯、聚丙烯薄膜,以及必需時藉由一矽氧樹脂而帶有剝離性質之前述薄膜。Although the thickness of the release film (30) for the thermosetting double-sided adhesive film having excellent adhesive properties and heat resistance according to the present disclosure is not particularly limited, it is generally preferably 38 μm. Examples of such release film to be used may include polyethylene, polyethylene terephthalate, polypropylene film, and the aforementioned film with peeling properties if necessary by a silicone resin.

該用於依照本揭示內容之具有優異黏合性質與耐熱性之熱固性雙面黏合性薄膜之黏合性薄膜較佳地於125℃/1.5kg/1秒之條件下接合一晶粒(2cm×2cm)與另一晶粒(2cm×2cm),且接續一固化加工(175℃/1小時)之後,具有在室溫下為5kg或更高與在260℃下為100g或更高之晶粒剪應力。The adhesive film for a thermosetting double-sided adhesive film having excellent adhesive properties and heat resistance according to the present disclosure is preferably bonded to a crystal grain (2 cm × 2 cm) at 125 ° C / 1.5 kg / 1 second. With another crystal grain (2 cm × 2 cm), and after a curing process (175 ° C / 1 hour), there is a grain shear stress of 5 kg or more at room temperature and 100 g or more at 260 ° C .

以下,本揭示內容將經由較佳具體實施例與比較例被詳細地描述。Hereinafter, the present disclosure will be described in detail through preferred embodiments and comparative examples.

[具體實施例1][Specific Example 1]

首先,50重量份之一酚系酚醛環氧樹脂(環氧當量199)、150重量份之一由以下結構式1表示之酚樹脂、以及作為一固化劑之10重量份之六甲氧基甲基三聚氰胺與10重量份之鄰苯二甲酸酐係被添加至120重量份之NBR(含有27wt%之丙烯腈與5wt%之羧基)。接著,作為一橡膠交聯劑之2重量份之過氧化二異丙苯係被添加,以及藉由使用一丙酮溶劑調整該丙酮之數量,故該黏度變成400CPS。當溶液中所有如上述準備之成分在室溫下溶解之後,此黏合性溶液係施用至一具有一25μm厚度之聚醯亞胺薄膜之二側上,故於乾燥後該厚度為12μm。於一乾燥加工(150℃達三分鐘)之後,一具有一38μm厚度之聚對苯二甲酸乙二酯薄膜係被層疊於上以產生一黏合性薄膜。First, 50 parts by weight of one phenolic novolac epoxy resin (epoxy equivalent 199), 150 parts by weight of a phenol resin represented by the following structural formula 1, and 10 parts by weight of hexamethoxymethyl group as a curing agent Melamine and 10 parts by weight of phthalic anhydride were added to 120 parts by weight of NBR (containing 27% by weight of acrylonitrile and 5% by weight of carboxyl groups). Next, 2 parts by weight of dicumyl peroxide as a rubber crosslinking agent was added, and the amount of acetone was adjusted by using an acetone solvent, so that the viscosity became 400 CPS. After all the components prepared as described above were dissolved in the solution at room temperature, the adhesive solution was applied to both sides of a polyimide film having a thickness of 25 μm, so that the thickness was 12 μm after drying. After a dry process (150 ° C for three minutes), a polyethylene terephthalate film having a thickness of 38 μm was laminated thereon to produce an adhesive film.

(結構式1,軟化點:110℃)(Structure 1, softening point: 110 ° C)

[具體實施例2][Specific embodiment 2]

除了該以上使用之酚樹脂係被一由以下結構式2表示之酚樹脂替代之外,一由與具體實施例1相同組成所製備之黏合性溶液係以與具體實施例1相同方式被使用以生產一黏合性薄膜。An adhesive solution prepared by the same composition as that of the specific example 1 was used in the same manner as in the specific example 1, except that the phenol resin used above was replaced by a phenol resin represented by the following structural formula 2. Produce an adhesive film.

(結構式2,軟化點:85℃)(Structure 2, softening point: 85 ° C)

[具體實施例3][Detailed Example 3]

除了該以上使用之環氧樹脂係被一由以下結構式3表示之環氧樹脂替代之外,一由與實施例1相同組成所製備之黏合性溶液係以與具體實施例1相同方式被使用,生產一黏合性薄膜。An adhesive solution prepared by the same composition as that of Example 1 was used in the same manner as in Concrete Example 1, except that the epoxy resin used above was replaced by an epoxy resin represented by the following Structural Formula 3. , to produce an adhesive film.

(結構式3)(Structure 3)

[比較例1][Comparative Example 1]

除了該以上使用之NBR係被一不含有一羧基之NBR替代之外,一由與具體實施例1相同組成所製備之黏合性溶液係以與具體實施例1相同方式被使用,以生產一黏合性薄膜。An adhesive solution prepared from the same composition as in Example 1 was used in the same manner as in Example 1 except that the NBR used above was replaced by a NBR having no carboxyl group to produce a bond. Film.

[比較例2][Comparative Example 2]

除了該酚樹脂之數量增加至250重量份之外,一由與具體實施例1相同組成所製備之黏合性溶液係以與具體實施例1相同方式被使用,以生產一黏合性薄膜。An adhesive solution prepared from the same composition as that of Specific Example 1 was used in the same manner as in Example 1 except that the amount of the phenol resin was increased to 250 parts by weight to produce an adhesive film.

[比較例3][Comparative Example 3]

除了該酚樹脂之數量係減少至50重量份之外,一由與具體實施例1相同組成所製備之黏合性溶液係以與具體實施例1相同方式被使用,以生產一黏合性薄膜。An adhesive solution prepared from the same composition as that of Specific Example 1 was used in the same manner as in Example 1 except that the amount of the phenol resin was reduced to 50 parts by weight to produce an adhesive film.

[比較例4][Comparative Example 4]

除了該酚樹脂係被一具有相同結構但一125℃之軟化點之酚樹脂取代之外,一由與具體實施例1相同組成所製備之黏合性溶液係以與具體實施例1相同方式被使用,以生產一黏合性薄膜。An adhesive solution prepared by the same composition as that of Specific Example 1 was used in the same manner as in Concrete Example 1, except that the phenol resin was replaced by a phenol resin having the same structure but a softening point of 125 °C. To produce an adhesive film.

依照本揭示內容如上述生產之具體實施例與比較例之黏合性薄膜之性質係基於以下試驗實施例被評估,且其結果係顯示於表1。The properties of the adhesive film of the specific examples and comparative examples produced in accordance with the present disclosure were evaluated based on the following test examples, and the results are shown in Table 1.

[試驗實施例1:薄膜形式之保存的量測][Test Example 1: Measurement of preservation in film form]

此為一用於檢查在一物理衝擊被施加於依照具體實施例與比較例生產之黏合性薄膜上之後,黏合性薄膜之形式是否被保留的試驗,以及其係被設計以試驗是否該黏合性薄膜係因為在使用此黏合性薄膜之半導體封裝之製造時施加於該黏合性薄膜之切割衝擊而毀壞。This is a test for checking whether the form of the adhesive film is retained after a physical impact is applied to the adhesive film produced according to the specific examples and the comparative examples, and it is designed to test whether the adhesiveness is adhered. The film is destroyed by the cutting impact applied to the adhesive film at the time of manufacture of the semiconductor package using the adhesive film.

該試驗方法係如下:該如上述生產之黏合性薄膜係被切割至一5cm×5cm之尺寸以放於一具有1cm厚度之玻璃板上,接著自一20cm之高度降落一具有一1cm×1cm之尺寸之一重物(重量:100g)至該黏合性薄膜;之後,該黏合性薄膜係被肉眼觀察以檢查是否該黏合性薄膜有毀壞或沒有。若其無裂痕被發現,其係被標示”良好”,以及若其有裂痕被發現,其係被標示”損壞”。The test method is as follows: the adhesive film produced as described above is cut to a size of 5 cm × 5 cm to be placed on a glass plate having a thickness of 1 cm, and then dropped from a height of 20 cm to have a size of 1 cm × 1 cm. One of the weights (weight: 100 g) was dimensioned to the adhesive film; thereafter, the adhesive film was visually observed to check whether the adhesive film was damaged or not. If no cracks are found, the lines are marked "good" and if they are found to be cracked, they are marked "damaged".

[試驗實施例2:室溫下晶粒剪應力之量測][Test Example 2: Measurement of grain shear stress at room temperature]

該黏合性薄膜之該晶粒剪應力係於125℃/1.5kg/1秒之條件下接合一晶粒(2cm×2cm)與另一晶粒(2cm×2cm),且接續一175℃/1小時之固化加工之後,在室溫下使用一半自動晶粒黏合設備量測。通常,5kg或更高之晶粒剪應力係被需求,以防止於環氧樹脂模造混合或其他半導體組裝加工時被接合之晶粒的形變。The grain shear stress of the adhesive film is bonded to a crystal grain (2 cm × 2 cm) and another crystal grain (2 cm × 2 cm) at 125 ° C / 1.5 kg / 1 second, and is continued at 175 ° C / 1 After an hour of curing, it was measured at room temperature using a half automatic die bonding equipment. Generally, a grain shear stress of 5 kg or more is required to prevent deformation of the bonded crystal grains during epoxy molding or other semiconductor assembly processes.

[試驗實施例3:高溫下晶粒剪應力之量測][Test Example 3: Measurement of grain shear stress at high temperature]

以與室溫下晶粒剪應力量測之相同方式接合和固化後,該黏合性薄膜之晶粒剪應力係在260℃下量測。The grain shear stress of the adhesive film was measured at 260 ° C after bonding and curing in the same manner as the grain shear stress measurement at room temperature.

100g或更高之剪應力係被需求,以防止在該固化加工時施加之260℃高溫下,由於黏合強度之惡化之該與黏合性薄膜接合之晶粒的形變。A shear stress of 100 g or more is required to prevent deformation of the crystal grain bonded to the adhesive film due to deterioration of the adhesive strength at a high temperature of 260 ° C applied at the time of the curing process.

[試驗實施例4:PCT(壓力鍋試驗)之量測][Test Example 4: Measurement of PCT (pressure cooker test)]

如同在室溫下晶粒剪應力量測中接合一晶粒與另一晶粒之後,該黏合性薄膜與該晶粒之間氣泡或剝離之出現係使用X-光檢查,接續著於85℃/85%RH/84小時下進行PCT。若其無氣泡或剝離被發現,其係被標示”通過”,以及若其有氣泡或剝離被發現,其係被標示”失敗”。After bonding a grain and another grain in the grain shear stress measurement at room temperature, the appearance of bubbles or peeling between the film and the grain is examined by X-ray, followed by 85 ° C. PCT was performed at /85% RH/84 hours. If it is found to be free of air bubbles or peeling, it is marked "passed" and if it is found to have bubbles or peeling, it is marked "failed".

作為參考,商業使用之晶粒之間的黏合性薄膜在上述所有四個試驗中不應有任何”失敗”。For reference, the adhesive film between commercially available dies should not have any "failure" in all four of the above tests.

如同可自表1看出,該依照此揭示內容之具體實施例之使用於晶粒之間之黏合性薄膜在薄膜形式之保存、室溫下晶粒剪應力、高溫下晶粒剪應力、與PCT量測之試驗中表現優異結果,這些試驗係一黏合性薄膜所需之基本性質。As can be seen from Table 1, the adhesion of the adhesive film used between the crystal grains in the form of a film according to the specific embodiment of the present disclosure, the grain shear stress at room temperature, the grain shear stress at a high temperature, and Excellent results were obtained in the PCT measurement test, which are the basic properties required for an adhesive film.

本揭示內容係特別參考發明人所進行之許多具體實施例中的實施例與具體實施例而被詳細地描述,但其將被理解在不背離本揭示內容之精神與範疇下,許多變化與調整可被熟知此技藝者實施。The present disclosure has been described in detail with reference to the embodiments of the present invention and the specific embodiments of the present invention, but it is understood that many changes and modifications may be made without departing from the spirit and scope of the disclosure. It can be implemented by those skilled in the art.

1...電線1. . . wire

2...模製化合物2. . . Molding compound

3...黏合性薄膜3. . . Adhesive film

4...銲料遮罩4. . . Solder mask

5...式樣5. . . style

6...基板6. . . Substrate

7...子晶粒7. . . Sub-grain

8...母晶粒8. . . Mother grain

10...聚醯亞胺薄膜10. . . Polyimine film

20...黏合性層20. . . Adhesive layer

30...剝離薄膜30. . . Release film

第1圖係一堆疊之晶片級封裝之斷面圖;Figure 1 is a cross-sectional view of a stacked wafer level package;

第2圖係一依照此揭示內容之一最佳實施例之一於晶粒之間之黏合性薄膜之斷面圖。Figure 2 is a cross-sectional view of an adhesive film between the dies in accordance with one of the preferred embodiments of the present disclosure.

10...聚醯亞胺薄膜10. . . Polyimine film

20...黏合性層20. . . Adhesive layer

30...剝離薄膜30. . . Release film

Claims (2)

一種將熱固性雙面黏合性薄膜用於將被堆疊之晶粒間之黏著的用途,該熱固性雙面黏合性薄膜具有優異黏合性質與耐熱性,且具有塗佈於一聚醯亞胺薄膜之二側上之黏合性層,其中該黏合性層含有每100重量份之含有1-10wt%之羧基的NBR中,5-200重量份之一環氧樹脂、50-200重量份之一酚樹脂、與2-40重量份之一種或多種選自胺系或酸酐系之固化劑,以及其中該酚樹脂係具有一依照一環球法量測之60-120℃之軟化點,且該NBR具有一3,000-200,000之重量平均分子量,以及含有20-50wt%之丙烯腈。 A use of a thermosetting double-sided adhesive film for bonding between stacked crystal grains, the thermosetting double-sided adhesive film having excellent adhesive properties and heat resistance, and having a coating on a polyimide film An adhesive layer on the side, wherein the adhesive layer contains 5 to 200 parts by weight of one epoxy resin, 50 to 200 parts by weight of one phenol resin per 100 parts by weight of NBR containing 1-10% by weight of a carboxyl group, And 2-40 parts by weight of one or more curing agents selected from the group consisting of amine or acid anhydrides, and wherein the phenol resin has a softening point of 60-120 ° C measured according to a ring and ball method, and the NBR has a 3,000 a weight average molecular weight of -200,000, and 20-50% by weight of acrylonitrile. 如申請專利範圍第1項之將熱固性雙面黏合性薄膜用於將被堆疊之晶粒間之黏著的用途,其中於125℃/1.5kg/1秒之條件下接合一晶粒(2cm×2cm)與另一晶粒(2cm×2cm),且接續一固化加工(175℃/1小時)之後,該黏合性薄膜係具有在室溫下為5kg或更高與在260℃下為100g或更高之晶粒剪應力。 The use of a thermosetting double-sided adhesive film for bonding between stacked crystal grains, as in claim 1, wherein a die is bonded at a temperature of 125 ° C / 1.5 kg / 1 second (2 cm × 2 cm) After bonding with another crystal grain (2 cm × 2 cm) and subsequent curing (175 ° C / 1 hour), the adhesive film has a capacity of 5 kg or more at room temperature and 100 g or more at 260 ° C High grain shear stress.
TW100100300A 2010-06-23 2011-01-05 Thermo-setting double-sided adhesive film excellent in adhesive property and heat resistance TWI512077B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100059768A KR101171352B1 (en) 2010-06-23 2010-06-23 Thermo-setting double-sided adhesive film excellent in adhesive property and heat resistance

Publications (2)

Publication Number Publication Date
TW201200573A TW201200573A (en) 2012-01-01
TWI512077B true TWI512077B (en) 2015-12-11

Family

ID=45356577

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100100300A TWI512077B (en) 2010-06-23 2011-01-05 Thermo-setting double-sided adhesive film excellent in adhesive property and heat resistance

Country Status (3)

Country Link
KR (1) KR101171352B1 (en)
CN (1) CN102295895B (en)
TW (1) TWI512077B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103173175B (en) * 2013-03-23 2014-07-02 广东新展化工新材料有限公司 Organic silicone modified epoxy resin sealant and preparation method thereof
US11322449B2 (en) * 2017-10-31 2022-05-03 Taiwan Semiconductor Manufacturing Co., Ltd. Package with fan-out structures
CN108912599B (en) * 2018-06-26 2020-12-25 长春峰泰汽车胶业有限公司 Filter film obtained by compounding nitrile rubber and phenolic resin

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1237274A (en) * 1996-10-08 1999-12-01 日立化成工业株式会社 Semiconductor, semiconductor chip mounting substrate, methods of manufacturing device and substrate, adhesive and adhesive double coated film
CN1763145A (en) * 2004-10-22 2006-04-26 东丽世韩株式会社 Adhesive tape composition for electronic components

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100635053B1 (en) 2005-06-21 2006-10-16 도레이새한 주식회사 Adhesive tape for electronic parts
JP5003090B2 (en) 2006-10-06 2012-08-15 住友ベークライト株式会社 Adhesive film and semiconductor device using the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1237274A (en) * 1996-10-08 1999-12-01 日立化成工业株式会社 Semiconductor, semiconductor chip mounting substrate, methods of manufacturing device and substrate, adhesive and adhesive double coated film
CN1763145A (en) * 2004-10-22 2006-04-26 东丽世韩株式会社 Adhesive tape composition for electronic components

Also Published As

Publication number Publication date
TW201200573A (en) 2012-01-01
CN102295895B (en) 2014-04-02
CN102295895A (en) 2011-12-28
KR101171352B1 (en) 2012-08-10
KR20110139599A (en) 2011-12-29

Similar Documents

Publication Publication Date Title
JP5305501B2 (en) Thermosetting die bond film
JP6157890B2 (en) Underfill material, sealing sheet, and method for manufacturing semiconductor device
WO1998015975A1 (en) Semiconductor device, semiconductor chip mounting substrate, methods of manufacturing the device and substrate, adhesive, and adhesive double coated film
KR101625264B1 (en) An adhesive film for radiating heat, a semiconductor device comprising the same, and a method for producing the device
JP2014210880A (en) Thermosetting resin composition and method for manufacturing semiconductor device
JP5390209B2 (en) Thermosetting die bond film
KR20110040733A (en) Thermosetting die bonding film
KR20120104109A (en) Die-bonding film and use thereof
JP2009049400A (en) Thermoset die bond film
KR101178712B1 (en) Adhesive composition and film for manufacturing semiconductor
JP2016119493A (en) Die-bonding film, dicing/die-bonding film, method of manufacturing die-bonding film, and semiconductor device having die-bonding film
CN107267091A (en) Adhesive composition and adhesive sheet for preparing semiconductor packages
WO2016125537A1 (en) Film-shaped adhesive and semiconductor device using same
JP5749314B2 (en) Heat dissipation die bond film
JP5961015B2 (en) Underfill material and method for manufacturing semiconductor device
KR20130059292A (en) Method for manufacturing semiconductor device
TWI512077B (en) Thermo-setting double-sided adhesive film excellent in adhesive property and heat resistance
JP5827878B2 (en) Manufacturing method of semiconductor device
JP6662074B2 (en) Adhesive film
JP2004247657A (en) Adhesive sheet and semiconductor device using it
JPH11209724A (en) Flame retarded adhesive, flame retarded bonding member, wiring board for loading semiconductor having flame retarded bonding member and semiconductor device using the same
JP4466397B2 (en) Adhesive film for semiconductor and semiconductor device using the same
JP4050290B2 (en) Adhesive film for semiconductor and semiconductor device using the same
JP2015214660A (en) Sheet-like resin composition, laminate sheet and manufacturing method of semiconductor device
CN112740381B (en) Film-like adhesive, adhesive sheet, and semiconductor device and method for manufacturing same