TWI511166B - Conductive particles, conductive materials and connecting structures - Google Patents

Conductive particles, conductive materials and connecting structures Download PDF

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Publication number
TWI511166B
TWI511166B TW101127339A TW101127339A TWI511166B TW I511166 B TWI511166 B TW I511166B TW 101127339 A TW101127339 A TW 101127339A TW 101127339 A TW101127339 A TW 101127339A TW I511166 B TWI511166 B TW I511166B
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Taiwan
Prior art keywords
conductive
particles
weight
conductive layer
conductive particles
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TW101127339A
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Chinese (zh)
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TW201310467A (en
Inventor
Keizo Nishioka
Masahiro Ootsuka
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Sekisui Chemical Co Ltd
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Publication of TW201310467A publication Critical patent/TW201310467A/en
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Publication of TWI511166B publication Critical patent/TWI511166B/en

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    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00Non-insulated conductors or conductive bodies characterised by their form
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    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R4/00Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
    • H01R4/04Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation using electrically conductive adhesives
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    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material
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    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material
    • H01B1/22Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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Description

導電性粒子、導電材料及連接構造體Conductive particles, conductive materials, and connection structures

本發明係關於一種於基材粒子之表面上配置有導電層之導電性粒子,更詳細而言,例如係關於一種可用於電極間之電性連接之導電性粒子。又,本發明係關於一種使用上述導電性粒子之導電材料及連接構造體。The present invention relates to an electroconductive particle in which a conductive layer is disposed on a surface of a substrate particle, and more specifically, for example, an electroconductive particle which can be used for electrical connection between electrodes. Moreover, the present invention relates to a conductive material and a connection structure using the above conductive particles.

各向異性導電膏及各向異性導電膜等各向異性導電材料已廣為人知。該等各向異性導電材料係於黏合劑樹脂中分散有導電性粒子。Anisotropic conductive materials such as an anisotropic conductive paste and an anisotropic conductive film are widely known. The anisotropic conductive material is obtained by dispersing conductive particles in a binder resin.

業界將上述各向異性導電材料用於IC(integrated circuit,積體電路)晶片與可撓性印刷電路基板之連接、以及IC晶片與具有ITO(Indium Tin Oxide,氧化銦錫)電極的電路基板之連接等。例如,可藉由於IC晶片之電極與電路基板之電極間配置各向異性導電材料後,進行加熱及加壓,而將該等電極電性連接。The anisotropic conductive material is used in the connection between an IC (integrated circuit) wafer and a flexible printed circuit board, and an IC chip and a circuit substrate having an ITO (Indium Tin Oxide) electrode. Connection, etc. For example, an anisotropic conductive material may be disposed between the electrodes of the IC wafer and the electrodes of the circuit board, and then the electrodes may be electrically connected by heating and pressurization.

作為上述導電性粒子之一例,於下述專利文獻1中,揭示有於平均粒徑1~20 μm之球狀之基材粒子之表面,藉由非電解鍍敷法形成鎳導電層或鎳合金導電層所成的導電性粒子。該導電性粒子於導電層之最表層具有0.05~4 μm之微小突起。該導電層與該突起實質上連續地連接。As an example of the above-mentioned conductive particles, in the following Patent Document 1, a surface of spherical substrate particles having an average particle diameter of 1 to 20 μm is disclosed, and a nickel conductive layer or a nickel alloy is formed by electroless plating. Conductive particles formed by a conductive layer. The conductive particles have minute protrusions of 0.05 to 4 μm in the outermost layer of the conductive layer. The conductive layer is substantially continuously connected to the protrusion.

又,於下述專利文獻2中,揭示有包含基材粒子、及形成於該基材粒子之表面之導電層的導電性粒子。為形成基材粒子,係使用二乙烯苯-乙基乙烯苯混合物作為單體之 一部分。該導電性粒子於粒徑產生10%位移時之壓縮彈性模數為2.5×109 N/m2 以下且壓縮變形回復率為30%以上,並且破裂應變為30%以上。專利文獻2中記載,使用上述導電性粒子將基板之電極間電性連接之情形時,連接電阻降低,且連接可靠性提高。Further, Patent Document 2 listed below discloses conductive particles including a substrate particle and a conductive layer formed on the surface of the substrate particle. To form the substrate particles, a mixture of divinylbenzene-ethylvinylbenzene is used as part of the monomer. The conductive particles have a compression elastic modulus of at least 2.5 × 10 9 N/m 2 when the particle diameter is 10% displaced, a compression deformation recovery ratio of 30% or more, and a fracture strain of 30% or more. Patent Document 2 describes that when the electrodes of the substrate are electrically connected to each other by using the conductive particles, the connection resistance is lowered and the connection reliability is improved.

[先前技術文獻][Previous Technical Literature] [專利文獻][Patent Literature]

[專利文獻1]日本專利特開2000-243132號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2000-243132

[專利文獻2]日本專利特開2003-313304號公報[Patent Document 2] Japanese Patent Laid-Open Publication No. 2003-313304

使用專利文獻1所記載之導電性粒子將電極間連接之情形時,有電極間之連接電阻提高的情況。又,使用含有專利文獻1所記載之導電性粒子之各向異性導電材料將電極間連接之情形時,有無法充分地排除電極與導電性粒子之間之樹脂成分的情況。因此,有藉由上述各向異性導電材料中所含之導電性粒子而連接之電極間的連接電阻提高之情況。When the electrodes are connected by the conductive particles described in Patent Document 1, the connection resistance between the electrodes may be improved. In the case where the electrodes are connected by an anisotropic conductive material containing the conductive particles described in Patent Document 1, the resin component between the electrode and the conductive particles may not be sufficiently removed. Therefore, there is a case where the connection resistance between the electrodes connected by the conductive particles contained in the anisotropic conductive material is improved.

又,專利文獻1之實施例之導電性粒子係形成含有鎳及磷之導電層。於藉由導電性粒子進行連接之電極、及導電性粒子之導電層之表面多形成有氧化被膜。使用包含含有鎳及磷之導電層的導電性粒子將電極間連接時,由於含有鎳及磷之導電層相對柔軟,故而有時無法充分地排除電極及導電性粒子之表面之氧化被膜因而連接電阻提高。Further, the conductive particles of the examples of Patent Document 1 form a conductive layer containing nickel and phosphorus. An oxide film is formed on the surface of the electrode to which the conductive particles are connected and the conductive layer of the conductive particles. When the electrodes are connected by using conductive particles containing a conductive layer containing nickel and phosphorus, since the conductive layer containing nickel and phosphorus is relatively soft, the oxide film on the surface of the electrode and the conductive particles may not be sufficiently removed, and thus the resistance may be connected. improve.

又,若為降低連接電阻而將如專利文獻1所記載之含有鎳及磷之導電層之厚度增厚,則有導電性粒子使連接對象構件或基板損傷之情況。若連接對象構件或電極損傷,則容易使連接電阻提高。並且,若電極或連接對象構件損傷,則電極間之導通可靠性降低。In addition, when the thickness of the conductive layer containing nickel and phosphorus described in Patent Document 1 is increased to reduce the connection resistance, the conductive particles may damage the member to be bonded or the substrate. If the connection member or the electrode is damaged, it is easy to increase the connection resistance. Further, when the electrode or the member to be connected is damaged, the conduction reliability between the electrodes is lowered.

進而,如專利文獻1所記載之先前之導電性粒子存在複數個導電性粒子凝集之情況。若使用凝集之複數個導電性粒子將電極間連接,則有電極間產生短路之情況。Further, as the prior conductive particles described in Patent Document 1, a plurality of conductive particles are aggregated. When a plurality of agglomerated conductive particles are used to connect the electrodes, a short circuit may occur between the electrodes.

又,專利文獻2所記載之導電性粒子亦有無法充分地排除氧化被膜,或者無法抑制連接對象構件或基板之損傷的情況。因此,使用專利文獻2所記載之導電性粒子之情形時,亦難以充分降低電極間之連接電阻。Further, in the conductive particles described in Patent Document 2, the oxide film may not be sufficiently removed, or the damage of the connection member or the substrate may not be suppressed. Therefore, when the conductive particles described in Patent Document 2 are used, it is also difficult to sufficiently reduce the connection resistance between the electrodes.

本發明之目的在於提供一種可抑制複數個導電性粒子凝集,並且用於電極間之連接時可降低電極間之連接電阻的導電性粒子,以及使用該導電性粒子之導電材料及連接構造體。An object of the present invention is to provide a conductive particle which can suppress aggregation of a plurality of conductive particles and which can reduce the connection resistance between electrodes when used for connection between electrodes, and a conductive material and a connection structure using the conductive particles.

本發明之限定性之目的在於提供一種用於電極間之連接時,可有效果地排除電極及導電性粒子之表面之氧化被膜,可降低電極間之連接電阻的導電性粒子,以及使用該導電性粒子之導電材料及連接構造體。A limited object of the present invention is to provide an oxide film which can effectively remove the surface of the electrode and the conductive particles when the electrodes are connected, and can reduce the connection resistance between the electrodes, and use the conductive material. Conductive material and connecting structure of the particles.

本發明之限定性之目的在於提供一種用於電極間之連接時,可有效果地排除電極與導電性粒子之間之樹脂成分,可降低電極間之連接電阻的導電材料及連接構造體。A limited object of the present invention is to provide a conductive material and a connection structure which can effectively remove the resin component between the electrode and the conductive particles when the electrodes are connected, and can reduce the connection resistance between the electrodes.

根據本發明之較廣之態樣,可提供一種導電性粒子,其包含基材粒子及導電層,該導電層係配置於上述基材粒子之表面上,且含有鎳、硼、以及鎢及鉬中之至少1種金屬成分。According to a broader aspect of the present invention, there is provided a conductive particle comprising a substrate particle and a conductive layer disposed on a surface of the substrate particle and containing nickel, boron, and tungsten and molybdenum At least one metal component in the middle.

於本發明之導電性粒子之某特定態樣中,上述導電層之整體100重量%中上述硼之含量為0.05重量%以上、4重量%以下。In a specific aspect of the conductive particles of the present invention, the content of the boron in 100% by weight of the entire conductive layer is 0.05% by weight or more and 4% by weight or less.

於本發明之導電性粒子之某特定態樣中,上述導電層之整體100重量%中上述金屬成分之含量為0.1重量%以上、30重量%以下。In a specific aspect of the conductive particles of the present invention, the content of the metal component in 100% by weight of the total of the conductive layer is 0.1% by weight or more and 30% by weight or less.

於本發明之導電性粒子之某特定態樣中,上述導電層之整體100重量%中上述金屬成分之含量超過5重量%且為30重量%以下。In a specific aspect of the conductive particles of the present invention, the content of the metal component in the total 100% by weight of the conductive layer is more than 5% by weight and not more than 30% by weight.

於本發明之導電性粒子之某特定態樣中,上述金屬成分含有鎢。In a specific aspect of the conductive particles of the present invention, the metal component contains tungsten.

於本發明之導電性粒子之某特定態樣中,使該導電性粒子產生10%壓縮變形時之壓縮彈性模數為5000 N/mm2 以上、15000 N/mm2 以下。In a specific aspect of the conductive particles of the present invention, the compressive elastic modulus when the conductive particles are subjected to 10% compression deformation is 5000 N/mm 2 or more and 15000 N/mm 2 or less.

於本發明之導電性粒子之某特定態樣中,壓縮回復率為5%以上、70%以下。In a specific aspect of the conductive particles of the present invention, the compression recovery ratio is 5% or more and 70% or less.

於本發明之導電性粒子之某特定態樣中,上述金屬成分含有鉬。In a specific aspect of the conductive particles of the present invention, the metal component contains molybdenum.

於本發明之導電性粒子之某特定態樣中,上述導電層含有鎳及鉬,上述導電層之整體100重量%中,鎳之含量為 70重量%以上、99.9重量%以下,鉬之含量為0.1重量%以上、30重量%以下。In a specific aspect of the conductive particles of the present invention, the conductive layer contains nickel and molybdenum, and the content of nickel in the whole 100% by weight of the conductive layer is 70% by weight or more and 99.9% by weight or less, and the content of molybdenum is 0.1% by weight or more and 30% by weight or less.

於本發明之導電性粒子之某特定態樣中,5%壓縮時之壓縮彈性模數為7000 N/mm2 以上,且以壓縮方向上壓縮前導電性粒子之粒徑的超過10%且25%以下而壓縮導電性粒子時,上述導電層產生裂縫。In a specific aspect of the conductive particles of the present invention, the compression elastic modulus at 5% compression is 7000 N/mm 2 or more, and the particle diameter of the conductive particles before compression is more than 10% and 25 in the compression direction. When the conductive particles are compressed below %, the conductive layer is cracked.

於本發明之導電性粒子之某特定態樣中,上述導電層之厚度為0.05 μm以上、0.5 μm以下。In a specific aspect of the conductive particles of the present invention, the conductive layer has a thickness of 0.05 μm or more and 0.5 μm or less.

於本發明之導電性粒子之某特定態樣中,上述導電層於外表面具有突起。In a specific aspect of the conductive particles of the present invention, the conductive layer has protrusions on the outer surface.

本發明之導電材料含有上述導電性粒子及黏合劑樹脂。The conductive material of the present invention contains the above-mentioned conductive particles and a binder resin.

本發明之連接構造體包含第1連接對象構件、第2連接對象構件及連接上述第1、第2連接對象構件之連接部,上述連接部係藉由上述導電性粒子而形成,或者藉由含有上述導電性粒子及黏合劑樹脂之導電材料而形成。The connection structure according to the present invention includes a first connection target member, a second connection target member, and a connection portion that connects the first and second connection target members, and the connection portion is formed by the conductive particles or contains The conductive particles and the conductive material of the binder resin are formed.

本發明之導電性粒子於基材粒子之表面上配置有含有鎳、硼、以及鎢及鉬中之至少1種金屬成分之導電層,因此可抑制複數個導電性粒子凝集。並且,使用本發明之導電性粒子將電極間連接之情形時,可降低連接電阻。In the conductive particles of the present invention, a conductive layer containing at least one of nickel, boron, and at least one of tungsten and molybdenum is disposed on the surface of the substrate particles, so that aggregation of a plurality of conductive particles can be suppressed. Further, when the electrodes are connected by using the conductive particles of the present invention, the connection resistance can be lowered.

以下,詳細地說明本發明。Hereinafter, the present invention will be described in detail.

本發明之導電性粒子包含基材粒子及導電層,該導電層係配置於該基材粒子之表面上,且含有鎳、硼、以及鎢及 鉬中之至少1種金屬成分。該導電層為鎳-硼-鎢/鉬導電層。以下,有時將鎢及鉬中之至少1種金屬成分記載為金屬成分M。以下,有時將含有鎳、硼及金屬成分M之導電層記載為導電層X。The conductive particles of the present invention comprise a substrate particle and a conductive layer, and the conductive layer is disposed on a surface of the substrate particle and contains nickel, boron, and tungsten. At least one metal component of molybdenum. The conductive layer is a nickel-boron-tungsten/molybdenum conductive layer. Hereinafter, at least one metal component of tungsten and molybdenum may be described as the metal component M. Hereinafter, a conductive layer containing nickel, boron, and a metal component M may be referred to as a conductive layer X.

本發明之導電性粒子藉由採用上述構成,可抑制複數個導電性粒子凝集。由於可抑制複數個導電性粒子凝集,故而可有效果地防止電極間之短路。並且,本發明之導電性粒子藉由採用上述構成,於使用本發明之導電性粒子將電極間連接之情形時,可降低連接電阻。The conductive particles of the present invention can suppress aggregation of a plurality of conductive particles by adopting the above configuration. Since a plurality of conductive particles can be suppressed from aggregating, it is possible to effectively prevent a short circuit between the electrodes. Further, in the case where the conductive particles of the present invention have the above-described configuration, when the electrodes are connected using the conductive particles of the present invention, the connection resistance can be lowered.

藉由包含含有鎳之導電層的導電性粒子將電極間連接之情形時,電極間之連接電阻降低。若本發明之導電性粒子之導電層X的整體100重量%中鎳之含量為50重量%以上,則電極間之連接電阻顯著降低。因此,上述導電層X之整體100重量%中,鎳之含量較佳為50重量%以上。When the electrodes are connected by the conductive particles containing the conductive layer containing nickel, the connection resistance between the electrodes is lowered. When the content of nickel in the entire 100% by weight of the conductive layer X of the conductive particles of the present invention is 50% by weight or more, the connection resistance between the electrodes is remarkably lowered. Therefore, in 100% by weight of the entire conductive layer X, the content of nickel is preferably 50% by weight or more.

又,於包含不含有硼之鎳導電層的導電性粒子中,該不含有硼之鎳導電層過度柔軟,將電極間連接時,有無法充分地排除電極及導電性粒子之表面之氧化被膜,連接電阻提高之情況。例如,包含含有鎳及磷之導電層的導電性粒子無法充分地排除電極及導電性粒子之表面之氧化被膜,容易使連接電阻提高。尤其是若上述導電層之整體100重量%中磷之含量為10.5重量%以上,則容易使連接電阻提高,若為1重量%以上則更容易使連接電阻提高。Further, in the conductive particles containing the nickel conductive layer containing no boron, the nickel-free conductive layer containing no boron is excessively soft, and when the electrodes are connected to each other, the oxide film on the surface of the electrode and the conductive particles cannot be sufficiently removed. The connection resistance is increased. For example, the conductive particles including the conductive layer containing nickel and phosphorus cannot sufficiently remove the oxide film on the surfaces of the electrode and the conductive particles, and the connection resistance is easily improved. In particular, when the content of phosphorus in 100% by weight of the entire conductive layer is 10.5% by weight or more, the connection resistance is easily improved, and when it is 1% by weight or more, the connection resistance is more easily improved.

另一方面,若為降低連接電阻而將含有鎳及磷之導電層之厚度增厚,則有導電性粒子使連接對象構件或基板損傷 之情況。On the other hand, if the thickness of the conductive layer containing nickel and phosphorus is increased in order to lower the connection resistance, the conductive particles may damage the member or substrate to be bonded. The situation.

相對於此,含有鎳及硼之上述導電層X之硬度則相對較高,故而可降低電極間之連接電阻。將電極間連接時,可排除電極及導電性粒子之表面之氧化被膜,可降低連接電阻。On the other hand, the hardness of the above-mentioned conductive layer X containing nickel and boron is relatively high, so that the connection resistance between the electrodes can be reduced. When the electrodes are connected, the oxide film on the surfaces of the electrodes and the conductive particles can be eliminated, and the connection resistance can be lowered.

進而,於本發明之導電性粒子中,上述導電層X不僅含有硼,亦含有鎢及鉬中之至少1種金屬成分M,因此可使含有硼及上述金屬成分M之導電層X顯著變硬。因此,可充分地排除電極及導電性粒子之表面之氧化被膜,可使連接電阻顯著降低。尤其是於上述導電層X含有上述金屬成分M且上述導電層X於外表面具有突起之情形時,可更有效果地排除電極及導電性粒子之表面之氧化被膜,可進一步降低連接電阻。Further, in the conductive particles of the present invention, the conductive layer X contains not only boron but also at least one metal component M of tungsten and molybdenum, so that the conductive layer X containing boron and the metal component M can be remarkably hardened. . Therefore, the oxide film on the surface of the electrode and the conductive particles can be sufficiently removed, and the connection resistance can be remarkably lowered. In particular, when the conductive layer X contains the metal component M and the conductive layer X has protrusions on the outer surface, the oxide film on the surface of the electrode and the conductive particles can be more effectively removed, and the connection resistance can be further reduced.

進而,藉由使上述導電層X含有上述金屬成分M,上述導電層X顯著變硬,其結果,即便對藉由導電性粒子將電極間連接之連接構造體施以衝擊,亦不易產生導通不良。即,亦可提高連接構造體之耐衝擊性。Further, when the conductive layer X contains the metal component M, the conductive layer X is remarkably hardened, and as a result, even if the connection structure is connected to the electrodes by the conductive particles, the conduction failure is less likely to occur. . That is, the impact resistance of the connection structure can also be improved.

進而,先前之導電性粒子存在導電層之表面之磁性較高之情況,又,含有鎳及硼之導電層之表面之磁性較高,故而將電極間電性連接之情形時,由於因磁性而凝集之導電性粒子之影響,存在橫方向上鄰接之電極間較容易連接之傾向。於本發明之導電性粒子中,由於上述導電層X含有上述金屬成分M,故而上述導電層X之表面之磁性顯著降低。因此,可抑制複數個導電性粒子凝集。故而,將電極 間電性連接之情形時,可抑制因凝集之導電性粒子而使橫方向上鄰接之電極間連接。即,可進一步防止相鄰之電極間之短路。Further, the former conductive particles have a high magnetic field on the surface of the conductive layer, and the surface of the conductive layer containing nickel and boron has high magnetic properties, so that the electrodes are electrically connected to each other due to magnetic properties. The influence of the agglomerated conductive particles tends to be easily connected between adjacent electrodes in the lateral direction. In the conductive particles of the present invention, since the conductive layer X contains the metal component M, the magnetic properties of the surface of the conductive layer X are remarkably lowered. Therefore, aggregation of a plurality of conductive particles can be suppressed. Therefore, the electrode In the case of electrically connecting, it is possible to suppress the connection between the electrodes adjacent in the lateral direction due to the aggregated conductive particles. That is, the short circuit between adjacent electrodes can be further prevented.

較佳為上述導電層X之整體100重量%中,鎳之含量為70重量%以上、99.9重量%以下,且上述金屬成分M之含量為0.1重量%以上、30重量%以下。進而,較佳為上述導電層X不含有磷,或者上述導電層X含有磷且上述導電層X之整體100重量%中磷之含量未達1重量%。It is preferable that the content of nickel is 70% by weight or more and 99.9% by weight or less based on 100% by weight of the entire conductive layer X, and the content of the metal component M is 0.1% by weight or more and 30% by weight or less. Further, it is preferable that the conductive layer X does not contain phosphorus, or that the conductive layer X contains phosphorus and the content of phosphorus in 100% by weight of the entire conductive layer X is less than 1% by weight.

較佳為上述導電層X之整體100重量%中,鎳之含量為70重量%以上、99.9重量%以下,上述金屬成分M之含量為0.1重量%以上、30重量%以下,並且上述導電層X不含有磷,或者上述導電層X含有磷且上述導電層X之整體100重量%中磷之含量未達1重量%。將具備該較佳構成之導電性粒子用於電極間之連接時,可有效果地排除電極及導電性粒子之表面之氧化被膜。因此,可進一步降低所獲得之連接構造體之電極間之連接電阻。又,由於具備該較佳構成之導電性粒子中鎳之含量為70重量%以上,故而電極間之連接電阻顯著降低。It is preferable that the content of nickel is 70% by weight or more and 99.9% by weight or less in the entire 100% by weight of the conductive layer X, and the content of the metal component M is 0.1% by weight or more and 30% by weight or less, and the conductive layer X is Phosphorus is not contained, or the above-mentioned conductive layer X contains phosphorus and the content of phosphorus in 100% by weight of the entire conductive layer X is less than 1% by weight. When the conductive particles having such a preferred configuration are used for the connection between the electrodes, the oxide film on the surface of the electrode and the conductive particles can be effectively removed. Therefore, the connection resistance between the electrodes of the obtained connection structure can be further reduced. In addition, since the content of nickel in the conductive particles having the preferred configuration is 70% by weight or more, the connection resistance between the electrodes is remarkably lowered.

又,藉由使上述導電層X之整體100重量%中上述金屬成分M之含量為0.1重量%以上、30重量%以下,則與不含有上述金屬成分M之導電層相比,導電層X顯著變硬。因此,可有效果地排除電極及導電性粒子之表面之氧化被膜,結果電極間之連接電阻進一步降低。又,於調配導電性粒子及黏合劑樹脂,使用導電材料將電極間連接之情形 時,可有效果地排除電極與導電性粒子之間之樹脂成分,藉此亦可進一步降低電極間之連接電阻。In addition, when the content of the metal component M in the whole 100% by weight of the conductive layer X is 0.1% by weight or more and 30% by weight or less, the conductive layer X is remarkable as compared with the conductive layer not containing the metal component M. Harden. Therefore, the oxide film on the surface of the electrode and the conductive particles can be effectively removed, and as a result, the connection resistance between the electrodes is further lowered. Moreover, in the case where the conductive particles and the binder resin are blended, the electrodes are connected by using a conductive material. In this case, the resin component between the electrode and the conductive particles can be effectively removed, whereby the connection resistance between the electrodes can be further reduced.

使本發明之導電性粒子產生10%壓縮變形時之壓縮彈性模數(10%K值)較佳為5000 N/mm2 以上,更佳為7000 N/mm2 以上,且較佳為15000 N/mm2 以下,更佳為10000 N/mm2 以下。若上述壓縮彈性模數(10%K值)為上述下限以上,則可更有效果地排除電極及導電性粒子之表面之氧化被膜,進而可更有效果地排除電極與導電性粒子之間之樹脂成分,結果電極間之連接電阻進一步降低。The compression elastic modulus (10% K value) when the conductive particles of the present invention are subjected to 10% compression deformation is preferably 5,000 N/mm 2 or more, more preferably 7,000 N/mm 2 or more, and preferably 15,000 N. /mm 2 or less, more preferably 10000 N/mm 2 or less. When the compression elastic modulus (10% K value) is at least the above lower limit, the oxide film on the surface of the electrode and the conductive particles can be more effectively removed, and the electrode and the conductive particle can be more effectively removed. As a result of the resin component, the connection resistance between the electrodes was further lowered.

上述壓縮彈性模數(10%K值)可以如下方式而測定。The above compression elastic modulus (10% K value) can be measured as follows.

使用微小壓縮試驗機,利用圓柱(直徑50 μm,金剛石製)之平滑壓頭端面,於壓縮速度2.6 mN/s及最大試驗荷重10 gf之條件下壓縮導電性粒子。測定此時之荷重值(N)及壓縮位移(mm)。可根據所獲得之測定值,利用下述式求得上述壓縮彈性模數。作為上述微小壓縮試驗機,例如可使用Fischer公司製造之「Fischerscope H-100」等。The conductive particles were compressed using a micro-compression tester using a smooth indenter end face of a cylinder (diameter 50 μm, made of diamond) at a compression speed of 2.6 mN/s and a maximum test load of 10 gf. The load value (N) and the compression displacement (mm) at this time were measured. The above-described compression elastic modulus can be obtained by the following formula based on the obtained measured value. As the micro compression tester, for example, "Fischerscope H-100" manufactured by Fischer Co., Ltd. or the like can be used.

K值(N/mm2 )=(3/21/2 ).F.S-3/2 .R-1/2 K value (N/mm 2 ) = (3/2 1/2 ). F. S -3/2 . R -1/2

F:導電性粒子產生10%壓縮變形時之荷重值(N)F: load value when the conductive particles generate 10% compression deformation (N)

S:導電性粒子產生10%壓縮變形時之壓縮位移(mm)S: Compressive displacement (mm) when the conductive particles are subjected to 10% compression deformation

R:導電性粒子之半徑(mm)R: radius of conductive particles (mm)

上述導電性粒子之壓縮回復率較佳為5%以上,更佳為20%以上,且較佳為70%以下,更佳為60%以下,進而較佳為50%以下。若壓縮回復率為上述下限以上及上述上限以下,則可更有效果地排除電極及導電性粒子之表面之氧 化被膜,進而可更有效果地排除電極與導電性粒子之間之樹脂成分,結果電極間之連接電阻進一步降低。進而,於硬化物及連接部之除導電性粒子以外之部分與導電性粒子及連接對象構件之界面更難以產生剝離。進而,可抑制用於電極間之連接之導電性粒子之斥力,結果使得導電材料不易自基板等剝離。藉此,亦使電極間之連接電阻進一步降低。The compression recovery ratio of the conductive particles is preferably 5% or more, more preferably 20% or more, and is preferably 70% or less, more preferably 60% or less, still more preferably 50% or less. When the compression recovery ratio is not less than the above lower limit and not more than the above upper limit, oxygen on the surface of the electrode and the conductive particles can be more effectively excluded. Further, the film is removed, and the resin component between the electrode and the conductive particles can be more effectively removed, and as a result, the connection resistance between the electrodes is further lowered. Further, it is more difficult for the interface between the cured material and the connecting portion other than the conductive particles to be peeled off from the interface between the conductive particles and the member to be bonded. Further, the repulsive force of the conductive particles used for the connection between the electrodes can be suppressed, and as a result, the conductive material is less likely to be peeled off from the substrate or the like. Thereby, the connection resistance between the electrodes is further lowered.

上述壓縮回復率可以如下方式而測定。The above compression recovery rate can be measured as follows.

於試樣台上散佈導電性粒子。對1個所散佈之導電性粒子,使用微小壓縮試驗機,向導電性粒子之中心方向施加負荷(反轉荷重值)直至導電性粒子產生30%壓縮變形為止。其後,卸除負荷直至原點用荷重值(0.40 mN)為止。測定其間之荷重-壓縮位移,根據下述式可求得壓縮回復率。再者,將負荷速度設為0.33 mN/s。作為上述微小壓縮試驗機,例如可使用Fischer公司製造之「Fischerscope H-100」等。Conductive particles are scattered on the sample stage. A load (inversion load value) was applied to the center of the conductive particles by using a micro compression tester for one of the conductive particles dispersed until the conductive particles were subjected to 30% compression deformation. Thereafter, the load is removed until the origin load value (0.40 mN). The load-compression displacement therebetween was measured, and the compression recovery ratio was obtained according to the following formula. Furthermore, the load speed was set to 0.33 mN/s. As the micro compression tester, for example, "Fischerscope H-100" manufactured by Fischer Co., Ltd. or the like can be used.

壓縮回復率(%)=[(L1-L2)/L1]×100Compression recovery rate (%) = [(L1-L2) / L1] × 100

L1:施加負荷時自原點用荷重值至反轉荷重值為止之壓縮位移L1: Compression displacement from the origin load value to the reverse load value when a load is applied

L2:解除負荷時自反轉荷重值至原點用荷重值為止之卸荷位移L2: Unloading displacement from the reversal load value to the origin load value when the load is released

再者,上述壓縮彈性模數及上述壓縮回復率可藉由上述基材粒子之種類、上述基材粒子之粒徑、上述導電層X之整體100重量%中鎳之含量、上述導電層X之整體100重量% 中上述金屬成分M之含量、上述導電層X之整體100重量%中磷之含量、上述導電層X之整體100重量%中硼之含量、上述導電層X之厚度等而適當調整。Further, the compression elastic modulus and the compression recovery ratio may be the type of the substrate particles, the particle diameter of the substrate particles, the content of nickel in 100% by weight of the entire conductive layer X, and the conductive layer X. 100% by weight overall The content of the metal component M, the content of phosphorus in 100% by weight of the entire conductive layer X, the content of boron in the entire 100% by weight of the conductive layer X, the thickness of the conductive layer X, and the like are appropriately adjusted.

本發明之導電性粒子較佳為5%壓縮時之壓縮彈性模數(5%K值)為7000 N/mm2 以上。The conductive particles of the present invention preferably have a compression elastic modulus (5% K value) of 7,000 N/mm 2 or more at 5% compression.

進而,本發明之導電性粒子較佳為,以壓縮方向上壓縮前導電性粒子之粒徑的超過10%且25%以下而壓縮導電性粒子時,上述導電層產生裂縫。換言之,較佳為於壓縮本發明之導電性粒子之情形時,當該導電性粒子以壓縮方向上壓縮前導電性粒子之粒徑的超過10%且25%以下而產生壓縮位移時,上述導電層產生裂縫。即,導電層產生裂縫的導電性粒子之壓縮位移較佳為超過10%且為25%以下。例如,當大幅度地壓縮導電性粒子時,導電層適度地部分地產生裂縫。具有此種性質之導電性粒子不僅壓縮初期階段之硬度充分高,且於受到適度壓縮時產生裂縫。將電極間連接時,在導電性粒子受到適度壓縮之階段導電層產生裂縫,故而可抑制電極損傷。其結果,可進一步降低所獲得之連接構造體之電極間之連接電阻,可進一步提高電極間之導通可靠性。Further, in the conductive particles of the present invention, when the conductive particles are compressed by more than 10% and 25% or less of the particle diameter of the conductive particles before compression in the compression direction, the conductive layer is cracked. In other words, when the conductive particles of the present invention are compressed, when the conductive particles are compressed by more than 10% and 25% or less of the particle diameter of the conductive particles before the compression, the conductive particles are preferably formed. The layer produces cracks. That is, the compressive displacement of the conductive particles in which the conductive layer is cracked is preferably more than 10% and 25% or less. For example, when the conductive particles are largely compressed, the conductive layer partially generates cracks. The conductive particles having such properties are not only sufficiently high in hardness at the initial stage of compression, but also cracks when subjected to moderate compression. When the electrodes are connected to each other, cracks are generated in the conductive layer at the stage where the conductive particles are moderately compressed, so that electrode damage can be suppressed. As a result, the connection resistance between the electrodes of the obtained connection structure can be further reduced, and the conduction reliability between the electrodes can be further improved.

本發明之導電性粒子較佳為5%壓縮時之壓縮彈性模數(5%K值)為7000 N/mm2 以上,且於壓縮本發明之導電性粒子之情形時,當以壓縮方向上壓縮前導電性粒子之粒徑的超過10%且25%以下而壓縮導電性粒子時,上述導電層產生裂縫。將具備該較佳構成之導電性粒子用於電極間之連 接時,可進一步降低電極間之連接電阻。The conductive particles of the present invention preferably have a compressive elastic modulus (5% K value) of 7,000 N/mm 2 or more when compressed at 5%, and when compressed in the case of the conductive particles of the present invention, when in the compression direction When the conductive particles are compressed by more than 10% and 25% or less of the particle diameter of the conductive particles before compression, the conductive layer is cracked. When the conductive particles having the preferred configuration are used for the connection between the electrodes, the connection resistance between the electrodes can be further reduced.

本發明之導電性粒子於5%壓縮時之壓縮彈性模數(5%K值)為7000 N/mm2 以上之情形時,壓縮初期階段之導電性粒子具有充分之硬度。因此,於將電極間連接時的導電性粒子之壓縮初期階段,可有效果地排除電極及導電性粒子之表面之氧化被膜。其結果,電極與導電性粒子之導電層有效地接觸,可使電極間之連接電阻進一步降低。When the conductive elastic modulus (5% K value) of the conductive particles of the present invention at 5% compression is 7000 N/mm 2 or more, the conductive particles in the initial stage of compression have sufficient hardness. Therefore, in the initial stage of compression of the conductive particles when the electrodes are connected, the oxide film on the surface of the electrode and the conductive particles can be effectively removed. As a result, the electrode is in effective contact with the conductive layer of the conductive particles, and the connection resistance between the electrodes can be further lowered.

相對於此,於使用5%壓縮時之壓縮彈性模數(5%K值)未達7000 N/mm2 之導電性粒子將電極間電性連接之情形時,與使用5%壓縮時之壓縮彈性模數(5%K值)為7000 N/mm2 以上之導電性粒子將電極間電性連接之情形相比,有電極及導電性粒子之表面之氧化被膜之排除性降低之傾向,有電極間之連接電阻提高之傾向。On the other hand, in the case where the conductive elastic particles having a compression elastic modulus (5% K value) of 5% compression are not connected to 7000 N/mm 2 , the electrodes are electrically connected, and compression is performed when 5% compression is used. When the conductive particles having a modulus of elasticity (5% K value) of 7000 N/mm 2 or more have a tendency to electrically connect the electrodes, the exclusion property of the oxide film on the surface of the electrode and the conductive particles tends to be lowered. The tendency of the connection resistance between the electrodes to increase.

就進一步降低電極間之連接電阻之觀點而言,上述5%K值更佳為8000 N/mm2 以上,進而較佳為9000 N/mm2 以上。上述5%K值之上限並無特別限定。上述5%K值例如可為15000 N/mm2 以下,亦可為10000 N/mm2 以下。The 5% K value is more preferably 8000 N/mm 2 or more, and still more preferably 9000 N/mm 2 or more from the viewpoint of further reducing the connection resistance between the electrodes. The upper limit of the above 5% K value is not particularly limited. The 5% K value may be, for example, 15000 N/mm 2 or less, or may be 10000 N/mm 2 or less.

上述壓縮彈性模數(5%K值)可以如下方式而測定。The above compression elastic modulus (5% K value) can be measured as follows.

使用微小壓縮試驗機,利用圓柱(直徑50 μm,金剛石製)之平滑壓頭端面,於壓縮速度2.6 mN/s及最大試驗荷重10 gf之條件下壓縮導電性粒子。測定此時之荷重值(N)及壓縮位移(mm)。根據所獲得之測定值,利用下述式可求得上述壓縮彈性模數。作為上述微小壓縮試驗機,例如可使用Fischer公司製造之「Fischerscope H-100」等。The conductive particles were compressed using a micro-compression tester using a smooth indenter end face of a cylinder (diameter 50 μm, made of diamond) at a compression speed of 2.6 mN/s and a maximum test load of 10 gf. The load value (N) and the compression displacement (mm) at this time were measured. From the measured values obtained, the above-described compression elastic modulus can be obtained by the following formula. As the micro compression tester, for example, "Fischerscope H-100" manufactured by Fischer Co., Ltd. or the like can be used.

K值(N/mm2 )=(3/21/2 ).F.S-3/2 .R-1/2 K value (N/mm 2 ) = (3/2 1/2 ). F. S -3/2 . R -1/2

F:導電性粒子產生5%壓縮變形時之荷重值(N)F: load value when the conductive particles generate 5% compression deformation (N)

S:導電性粒子產生5%壓縮變形時之壓縮位移(mm)S: Compressive displacement (mm) when conductive particles produce 5% compression deformation

R:導電性粒子之半徑(mm)R: radius of conductive particles (mm)

上述壓縮彈性模數(10%K值及5%K值)可普遍性地且定量地表示導電性粒子之硬度。藉由使用上述壓縮彈性模數,可定量且唯一地表示導電性粒子之硬度。The above compression elastic modulus (10% K value and 5% K value) can generally and quantitatively indicate the hardness of the conductive particles. By using the above-described compression elastic modulus, the hardness of the conductive particles can be quantitatively and uniquely expressed.

就進一步降低電極間之連接電阻之觀點而言,上述導電層產生裂縫之壓縮位移更佳為12%以上,且更佳為20%以下。From the viewpoint of further reducing the connection resistance between the electrodes, the compression displacement of the conductive layer to generate cracks is more preferably 12% or more, and still more preferably 20% or less.

以下,一面參照圖式一面說明本發明之具體實施形態及實施例,藉此闡明本發明。Hereinafter, the present invention will be elucidated by explaining specific embodiments and examples of the invention with reference to the drawings.

圖1係表示本發明之第1實施形態之導電性粒子的剖面圖。Fig. 1 is a cross-sectional view showing conductive particles according to a first embodiment of the present invention.

如圖1所示,導電性粒子1包含基材粒子2、導電層3、複數個芯物質4及複數個絕緣物質5。As shown in FIG. 1, the conductive particles 1 include a substrate particle 2, a conductive layer 3, a plurality of core materials 4, and a plurality of insulating materials 5.

導電層3係配置於基材粒子2之表面上。導電層3含有鎳、硼及上述金屬成分M。導電層3為鎳-硼-鎢/鉬導電層。導電性粒子1係基材粒子2之表面由導電層3被覆之被覆粒子。The conductive layer 3 is disposed on the surface of the substrate particles 2. The conductive layer 3 contains nickel, boron, and the above-described metal component M. The conductive layer 3 is a nickel-boron-tungsten/molybdenum conductive layer. The conductive particles 1 are coated particles in which the surface of the substrate particles 2 is covered with the conductive layer 3.

導電性粒子1於表面具有複數個突起1a。導電層3於外表面具有複數個突起3a。複數個芯物質4係配置於基材粒子2之表面上。複數個芯物質4係埋入在導電層3內。芯物質4係配置於突起1a、3a之內側。導電層3被覆複數個芯物質 4。藉由複數個芯物質4,導電層3之外表面隆起而形成突起1a、3a。The electroconductive particle 1 has a plurality of protrusions 1a on the surface. The conductive layer 3 has a plurality of protrusions 3a on the outer surface. A plurality of core materials 4 are disposed on the surface of the substrate particles 2. A plurality of core materials 4 are buried in the conductive layer 3. The core material 4 is disposed inside the protrusions 1a and 3a. The conductive layer 3 is coated with a plurality of core materials 4. The protrusions 1a, 3a are formed by a plurality of core materials 4, and the outer surface of the conductive layer 3 is raised.

導電性粒子1包含配置於導電層3之外表面上之絕緣物質5。導電層3之外表面之至少一部分區域由絕緣物質5被覆。絕緣物質5係由具有絕緣性之材料而形成,為絕緣性粒子。如此,本發明之導電性粒子亦可包含配置於導電層之外表面上之絕緣物質。但是,本發明之導電性粒子亦可並非必需包含絕緣物質。The conductive particles 1 include an insulating material 5 disposed on the outer surface of the conductive layer 3. At least a portion of the outer surface of the conductive layer 3 is covered with the insulating material 5. The insulating material 5 is formed of an insulating material and is an insulating particle. As such, the conductive particles of the present invention may further comprise an insulating material disposed on the outer surface of the conductive layer. However, the conductive particles of the present invention may not necessarily contain an insulating material.

圖2係表示本發明之第2實施形態之導電性粒子的剖面圖。Fig. 2 is a cross-sectional view showing conductive particles according to a second embodiment of the present invention.

圖2所示之導電性粒子11包含基材粒子2、第2導電層12(其他導電層)、導電層13(第1導電層)、複數個芯物質4及複數個絕緣物質5。The conductive particles 11 shown in FIG. 2 include a substrate particle 2, a second conductive layer 12 (other conductive layer), a conductive layer 13 (first conductive layer), a plurality of core materials 4, and a plurality of insulating materials 5.

於導電性粒子1與導電性粒子11之間,僅導電層不同。即,於導電性粒子1中係形成單層構造之導電層,相對於此,於導電性粒子11中係形成雙層構造之第2導電層12及導電層13。Between the conductive particles 1 and the conductive particles 11, only the conductive layers are different. In other words, a conductive layer having a single-layer structure is formed in the conductive particles 1. On the other hand, the second conductive layer 12 and the conductive layer 13 having a two-layer structure are formed in the conductive particles 11.

導電層13係配置於基材粒子2之表面上。於基材粒子2與導電層13之間,配置有第2導電層12(其他導電層)。因此,於基材粒子2之表面上配置有第2導電層12,於第2導電層12之表面上配置有導電層13。導電層13含有鎳、硼及鎢。導電層13於外表面具有複數個突起13a。導電性粒子11於表面具有複數個突起11a。The conductive layer 13 is disposed on the surface of the substrate particles 2. The second conductive layer 12 (other conductive layer) is disposed between the substrate particles 2 and the conductive layer 13. Therefore, the second conductive layer 12 is disposed on the surface of the substrate particle 2, and the conductive layer 13 is disposed on the surface of the second conductive layer 12. The conductive layer 13 contains nickel, boron, and tungsten. The conductive layer 13 has a plurality of protrusions 13a on the outer surface. The conductive particles 11 have a plurality of protrusions 11a on the surface.

圖3係表示本發明之第3實施形態之導電性粒子的剖面 圖。Figure 3 is a cross section showing conductive particles according to a third embodiment of the present invention. Figure.

圖3所示之導電性粒子21包含基材粒子2及導電層22。導電層22係配置於基材粒子2之表面上。導電層22含有鎳、硼及上述金屬成分M。The conductive particles 21 shown in FIG. 3 include the substrate particles 2 and the conductive layer 22. The conductive layer 22 is disposed on the surface of the substrate particles 2. The conductive layer 22 contains nickel, boron, and the above-described metal component M.

導電性粒子21不包含芯物質。導電性粒子21之表面不具有突起。導電性粒子21為球狀。導電層22之表面不具有突起。如此,本發明之導電性粒子亦可不具有突起,亦可為球狀。又,導電性粒子21不包含絕緣物質。但是,導電性粒子21亦可包含配置於導電層22之表面上之絕緣物質。The conductive particles 21 do not contain a core substance. The surface of the conductive particles 21 does not have protrusions. The conductive particles 21 are spherical. The surface of the conductive layer 22 has no protrusions. As described above, the conductive particles of the present invention may have no protrusions or may be spherical. Further, the conductive particles 21 do not contain an insulating material. However, the conductive particles 21 may also include an insulating material disposed on the surface of the conductive layer 22.

於導電性粒子1、11、21中,較佳為導電層3、13、22之整體100重量%中,鎳之含量為70重量%以上、99.9重量%以下,上述金屬成分M之含量為0.1重量%以上、30重量%以下。進而,較佳為導電層3、13、22不含有磷,或者導電層3、13、22含有磷且導電層3、13、22之整體100重量%中,磷之含量未達1重量%。In the conductive particles 1, 11, and 21, it is preferable that the content of nickel is 70% by weight or more and 99.9% by weight or less based on 100% by weight of the entire conductive layers 3, 13, and 22. The content of the metal component M is 0.1. The weight% or more and 30% by weight or less. Further, it is preferable that the conductive layers 3, 13, and 22 do not contain phosphorus, or that the conductive layers 3, 13, and 22 contain phosphorus and that the content of phosphorus is less than 1% by weight in 100% by weight of the entire conductive layers 3, 13, and 22.

導電性粒子1、11、21之上述5%K值較佳為7000 N/mm2 以上。進而,較佳為於壓縮導電性粒子1、11、21之情形時,當以壓縮方向上壓縮前導電性粒子1、11、21之粒徑的超過10%且25%以下而使導電性粒子1、11、21產生壓縮位移時,導電層3、13、22產生裂縫。即,導電性粒子1、11、21較佳為,將壓縮方向上壓縮前導電性粒子1、11、21之粒徑設為X時,當壓縮方向上導電性粒子1、11、21之粒徑為0.75X以上且未達0.90X時,導電層3、13、22產生裂縫。例如,於壓縮方向上壓縮前導電性粒子1、11、21 之粒徑為5 μm之情形時,較佳為當壓縮導電性粒子1、11、21,使壓縮方向上導電性粒子1、11、21之粒徑成為3.75 μm以上且未達4.5 μm時,導電層3、13、22產生裂縫。再者,導電性粒子11中,亦可不僅導電層13產生裂縫,且第2導電層12亦產生裂縫。The 5% K value of the conductive particles 1, 11, and 21 is preferably 7,000 N/mm 2 or more. Further, in the case of compressing the conductive particles 1, 11, and 21, it is preferable to make the conductive particles more than 10% and 25% or less of the particle diameter of the front conductive particles 1, 11, and 21 in the compression direction. When the compression displacement is generated by 1, 11, and 21, the conductive layers 3, 13, 22 are cracked. In other words, it is preferable that the conductive particles 1, 11, and 21 have particles of the conductive particles 1, 11, 21 in the compression direction when the particle diameters of the conductive particles 1, 11, 21 before compression are set to X in the compression direction. When the diameter is 0.75X or more and less than 0.90X, the conductive layers 3, 13, and 22 are cracked. For example, when the particle diameter of the front conductive particles 1, 11, 21 is 5 μm in the compression direction, it is preferable to compress the conductive particles 1, 11, 21 so that the conductive particles 1 and 11 in the compression direction are obtained. When the particle diameter of 21 becomes 3.75 μm or more and less than 4.5 μm, the conductive layers 3, 13, and 22 are cracked. Further, in the conductive particles 11, not only the conductive layer 13 may be cracked, but also the second conductive layer 12 may be cracked.

再者,上述「裂縫」係表示導電層中最初(第1次)之裂縫。因此,就本實施形態之導電性粒子1、11、21而言,較佳為於壓縮包含無裂縫之導電層3、13、22之導電性粒子1、11、21時,當導電性粒子1、11、21以壓縮方向上壓縮前導電性粒子1、11、21之粒徑的超過10%且25%以下而產生壓縮位移時,導電層3、13、22產生裂縫。Further, the above "crack" means the first (first time) crack in the conductive layer. Therefore, in the conductive particles 1, 11, and 21 of the present embodiment, when the conductive particles 1, 11, and 21 including the non-cracking conductive layers 3, 13, and 22 are compressed, the conductive particles 1 are preferably used. When 11, 21 and 21 are less than 10% and 25% or less of the particle diameters of the pre-compressed conductive particles 1, 11, and 21 in the compression direction to cause a compression displacement, the conductive layers 3, 13, and 22 are cracked.

使導電層3、13、22產生裂縫之壓縮位移之測定具體而言係以如下方式進行。再者,圖5中係使用導電性粒子21。The measurement of the compression displacement in which the conductive layers 3, 13, 22 are cracked is specifically performed as follows. Further, in Fig. 5, conductive particles 21 are used.

如圖5所示,於台71上放置導電性粒子21。使用微小壓縮試驗機(Fischer公司製造之「Fischerscope H-100」),於壓縮速度0.33 mN/s及最大試驗荷重10 mN之條件下,以圓柱(直徑50 μm,金剛石製)作為壓縮構件72,使該壓縮構件72之平滑端面72a朝向導電性粒子21沿箭頭A所示之方向降落。藉由平滑端面72a壓縮導電性粒子21。持續進行壓縮直至導電性粒子21之導電層22中部分地產生裂縫22a為止。於導電性粒子1、11之情形時亦可同樣進行測定。As shown in FIG. 5, the conductive particles 21 are placed on the stage 71. Using a micro compression tester (Fischerscope H-100 manufactured by Fischer), a cylinder (diameter 50 μm, made of diamond) was used as the compression member 72 under the conditions of a compression speed of 0.33 mN/s and a maximum test load of 10 mN. The smooth end surface 72a of the compression member 72 is caused to fall toward the conductive particles 21 in the direction indicated by the arrow A. The conductive particles 21 are compressed by the smooth end surface 72a. The compression is continued until the crack 22a is partially generated in the conductive layer 22 of the conductive particles 21. In the case of the conductive particles 1 and 11, the measurement can also be carried out in the same manner.

再者,圖5所示之剖面圖中係圖示出於導電性粒子21之上下部分導電層22中形成有裂縫22a之狀態,但導電層中 產生裂縫之位置並無特別限定。In addition, in the cross-sectional view shown in FIG. 5, the state in which the crack 22a is formed in the lower conductive layer 22 above the conductive particles 21 is shown, but in the conductive layer The position at which the crack is generated is not particularly limited.

較佳為以上述方式壓縮導電性粒子時,當導電性粒子以壓縮方向上壓縮前之導電性粒子之粒徑的超過10%而產生壓縮位移時,上述導電層產生裂縫,並且於25%以下之壓縮位移時,上述導電層產生裂縫。When the conductive particles are compressed in the above manner, when the conductive particles are compressed by more than 10% of the particle diameter of the conductive particles before compression in the compression direction, the conductive layer is cracked and is less than 25%. When the displacement is compressed, the conductive layer generates cracks.

一面壓縮導電性粒子,一面測定壓縮荷重值及壓縮位移發現,壓縮荷重值與壓縮位移之關係例如為圖6所示。於圖6中,係自A0點起開始壓縮,於A1點導電層中產生裂縫。隨著導電層產生裂縫,壓縮方向上導電性粒子之壓縮位移(粒徑)產生變化,壓縮位移自A1點移動至A2點。壓縮時導電性粒子上施加有壓縮荷重,若導電層產生裂縫則藉由相對較小之壓縮荷重即可將導電性粒子壓縮,因此對導電性粒子施加壓縮荷重之壓縮構件移動,壓縮方向上導電性粒子之壓縮位移(粒徑)產生變化。The compression load value and the compression displacement were measured while compressing the conductive particles, and the relationship between the compression load value and the compression displacement was as shown in Fig. 6, for example. In Fig. 6, the compression starts from the A0 point, and cracks are generated in the conductive layer of the A1 point. As the conductive layer is cracked, the compression displacement (particle diameter) of the conductive particles changes in the compression direction, and the compression displacement moves from the point A1 to the point A2. When compressing, the compressive load is applied to the conductive particles. If the conductive layer is cracked, the conductive particles can be compressed by a relatively small compressive load. Therefore, the compressive member that applies the compressive load to the conductive particles moves, and the conductive direction is conductive. The compressive displacement (particle size) of the particles changes.

再者,於圖6中,自A0點至A1點之線之斜度相對較大。於導電性粒子21之上述5%K值為7000 N/mm2 以上,導電性粒子21相對較硬之情形時,自A0點至A1點之線之斜度增大。Furthermore, in Fig. 6, the slope of the line from the point A0 to the point A1 is relatively large. When the 5% K value of the conductive particles 21 is 7000 N/mm 2 or more and the conductive particles 21 are relatively hard, the slope of the line from the A0 point to the A1 point increases.

[基材粒子][Substrate particles]

作為上述基材粒子,可列舉:樹脂粒子、除金屬粒子以外之無機粒子、有機無機混成粒子及金屬粒子等。上述基材粒子較佳為除金屬粒子以外者,較佳為樹脂粒子、除金屬粒子以外之無機粒子或有機無機混成粒子。Examples of the substrate particles include resin particles, inorganic particles other than metal particles, organic-inorganic mixed particles, and metal particles. The substrate particles are preferably other than metal particles, and are preferably resin particles or inorganic particles other than metal particles or organic-inorganic hybrid particles.

上述基材粒子較佳為由樹脂形成之樹脂粒子。使用上述 導電性粒子將電極間連接時,係將上述導電性粒子配置於電極間後,藉由進行壓接而壓縮上述導電性粒子。若基材粒子為樹脂粒子,則於上述壓接時上述導電性粒子容易產生變形,導電性粒子與電極之接觸面積增大。因此,電極間之導通可靠性提高。The substrate particles are preferably resin particles formed of a resin. Use the above When the conductive particles are connected between the electrodes, the conductive particles are placed between the electrodes, and then the conductive particles are compressed by pressure bonding. When the base material particles are resin particles, the conductive particles are likely to be deformed during the pressure bonding, and the contact area between the conductive particles and the electrode is increased. Therefore, the conduction reliability between the electrodes is improved.

作為用以形成上述樹脂粒子之樹脂,例如可列舉:聚烯烴樹脂、丙烯酸系樹脂、酚系樹脂、三聚氰胺樹脂、苯胍樹脂、脲樹脂、環氧樹脂、不飽和聚酯樹脂、飽和聚酯樹脂、聚對苯二甲酸乙二酯、聚碸、聚苯醚、聚縮醛、聚醯亞胺、聚醯胺醯亞胺、聚醚醚酮、聚醚碸、二乙烯苯聚合物以及二乙烯苯系共聚物等。作為上述二乙烯苯系共聚物等,可列舉二乙烯苯-苯乙烯共聚物及二乙烯苯-(甲基)丙烯酸酯共聚物等。用以形成上述樹脂粒子之樹脂較佳為使1種或2種以上的具有複數個乙烯性不飽和基之聚合性單體進行聚合而成之聚合物,原因在於可容易地將基材粒子之硬度控制在合適之範圍內。Examples of the resin for forming the resin particles include a polyolefin resin, an acrylic resin, a phenol resin, a melamine resin, and a benzoquinone. Resin, urea resin, epoxy resin, unsaturated polyester resin, saturated polyester resin, polyethylene terephthalate, polyfluorene, polyphenylene ether, polyacetal, polyimide, polyamidoxime Amine, polyetheretherketone, polyether oxime, divinylbenzene polymer, and divinylbenzene copolymer. Examples of the divinylbenzene-based copolymer and the like include a divinylbenzene-styrene copolymer and a divinylbenzene-(meth)acrylate copolymer. The resin for forming the resin particles is preferably a polymer obtained by polymerizing one or two or more kinds of polymerizable monomers having a plurality of ethylenically unsaturated groups, because the substrate particles can be easily used. The hardness is controlled within a suitable range.

作為用以形成上述無機粒子之無機物,可列舉二氧化矽及碳黑等。作為上述有機無機混成粒子,例如可列舉:由經交聯之烷氧基矽烷基聚合物與丙烯酸系樹脂所形成之有機無機混成粒子等。Examples of the inorganic material for forming the inorganic particles include cerium oxide, carbon black, and the like. Examples of the organic-inorganic hybrid particles include organic-inorganic mixed particles formed of a crosslinked alkoxyalkylene alkyl polymer and an acrylic resin.

於上述基材粒子為金屬粒子之情形時,作為用以形成該金屬粒子之金屬,可列舉:銀、銅、鎳、矽、金及鈦等。In the case where the substrate particles are metal particles, examples of the metal for forming the metal particles include silver, copper, nickel, rhodium, gold, and titanium.

上述基材粒子之粒徑較佳為0.1 μm以上,更佳為1 μm以上,進而較佳為1.5 μm以上,尤佳為2 μm以上,且較佳為 1000 μm以下,更佳為500 μm以下,進而更佳為300 μm以下,進而較佳為50 μm以下,尤佳為30 μm以下,最佳為5 μm以下。若基材粒子之粒徑為上述下限以上,則導電性粒子與電極之接觸面積增大,因此電極間之導通可靠性進一步提高,經由導電性粒子而連接之電極間的連接電阻進一步降低。進而,藉由非電解鍍敷於基材粒子之表面形成導電層時不易產生凝集,不易形成凝集之導電性粒子。若粒徑為上述上限以下,則導電性粒子容易充分地壓縮,電極間之連接電阻進一步降低,進而電極間之間隔變小。關於上述基材粒子之粒徑,於基材粒子為圓球狀之情形時係表示直徑,於基材粒子並非圓球狀之情形時係表示最大直徑。The particle diameter of the substrate particles is preferably 0.1 μm or more, more preferably 1 μm or more, further preferably 1.5 μm or more, and particularly preferably 2 μm or more, and preferably It is 1000 μm or less, more preferably 500 μm or less, further preferably 300 μm or less, further preferably 50 μm or less, particularly preferably 30 μm or less, and most preferably 5 μm or less. When the particle diameter of the substrate particles is at least the above lower limit, the contact area between the conductive particles and the electrode is increased. Therefore, the conduction reliability between the electrodes is further improved, and the connection resistance between the electrodes connected via the conductive particles is further lowered. Further, when the conductive layer is formed on the surface of the substrate particles by electroless plating, aggregation is less likely to occur, and aggregation of the conductive particles is less likely to occur. When the particle diameter is at most the above upper limit, the conductive particles are easily compressed sufficiently, and the connection resistance between the electrodes is further lowered, and the interval between the electrodes is further reduced. The particle diameter of the substrate particles is a diameter when the substrate particles are spherical, and indicates a maximum diameter when the substrate particles are not spherical.

上述基材粒子之粒徑尤佳為2 μm以上、5 μm以下。若上述基材粒子之粒徑在2~5 μm之範圍內,則電極間之間隔變小,且即便將導電層之厚度增厚,亦可獲得較小之導電性粒子。The particle diameter of the substrate particles is particularly preferably 2 μm or more and 5 μm or less. When the particle diameter of the substrate particles is in the range of 2 to 5 μm, the interval between the electrodes becomes small, and even if the thickness of the conductive layer is increased, a small amount of conductive particles can be obtained.

[導電層][conductive layer]

本發明之導電性粒子包含導電層X,其係配置於基材粒子之表面上,且含有鎳、硼、以及鎢及鉬中之至少1種金屬成分M。上述導電層X可直接積層於基材粒子之表面,亦可經由其他導電層等而配置於基材粒子之表面上。進而,上述導電層X之表面上亦可配置有其他導電層。較佳為上述導電層X之外側之表面上未配置有其他導電層。導電性粒子之外表面較佳為含有鎳之導電層X。藉由包含含 有鎳之導電層X之導電性粒子將電極間連接之情形時,連接電阻進一步降低。The conductive particles of the present invention comprise a conductive layer X which is disposed on the surface of the substrate particles and contains nickel, boron, and at least one metal component M of tungsten and molybdenum. The conductive layer X may be directly deposited on the surface of the substrate particles, or may be disposed on the surface of the substrate particles via another conductive layer or the like. Further, another conductive layer may be disposed on the surface of the conductive layer X. Preferably, no other conductive layer is disposed on the surface of the outer side of the conductive layer X. The outer surface of the conductive particles is preferably a conductive layer X containing nickel. By including When the conductive particles having the conductive layer X of nickel connect the electrodes, the connection resistance is further lowered.

上述導電層X含有鎳、硼、以及鎢及鉬中之至少1種金屬成分M。上述導電層X為鎳-硼-鎢/鉬導電層。上述導電層X較佳為含有鎳、硼及鎢,較佳為含有鎳、硼及鉬,較佳為含有鎳、硼、鎢及鉬。上述導電層X可為鎳-硼-鎢導電層,亦可為鎳-硼-鉬導電層。上述金屬成分M較佳為含有鎢,較佳為含有鉬,較佳為含有鎢及鉬。The conductive layer X contains nickel, boron, and at least one metal component M of tungsten and molybdenum. The conductive layer X is a nickel-boron-tungsten/molybdenum conductive layer. The conductive layer X preferably contains nickel, boron and tungsten, preferably contains nickel, boron and molybdenum, preferably nickel, boron, tungsten and molybdenum. The conductive layer X may be a nickel-boron-tungsten conductive layer or a nickel-boron-molybdenum conductive layer. The metal component M preferably contains tungsten, preferably contains molybdenum, preferably contains tungsten and molybdenum.

於上述導電層X中,鎳、硼及上述金屬成分M亦可合金化。於上述導電層X中,可鎳與硼合金化,亦可鎳與上述金屬成分M合金化,亦可硼與上述金屬成分M合金化。又,於上述導電層X中,除鎳、硼及上述金屬成分M以外,亦可使用鉻、(seaborgium)。In the conductive layer X, nickel, boron, and the metal component M may be alloyed. In the conductive layer X, nickel may be alloyed with boron, nickel may be alloyed with the metal component M, or boron may be alloyed with the metal component M. Further, in the conductive layer X, in addition to nickel, boron, and the metal component M, chromium may be used. (seaborgium).

又,於包含不含有鎢及鉬兩者之鎳導電層之導電性粒子中,該不含有鎢及鉬兩者之鎳導電層於壓縮初期階段硬度相對容易降低。因此,將電極間連接時,有排除電極及導電性粒子之表面之氧化被膜之效果變小,降低連接電阻之效果變小的傾向。Further, in the conductive particles including the nickel conductive layer not containing both tungsten and molybdenum, the nickel conductive layer not containing both tungsten and molybdenum is relatively easily reduced in hardness at the initial stage of compression. Therefore, when the electrodes are connected, the effect of eliminating the oxide film on the surface of the electrode and the conductive particles is small, and the effect of lowering the connection resistance tends to be small.

另一方面,若為獲得更大的降低連接電阻之效果,或者使得適合於流通較大電流之用途,而將不含有鎢及鉬兩者之鎳導電層之厚度增厚,則有導電性粒子容易對連接對象構件或基板造成損傷之傾向。其結果,有連接構造體之電極間之導通可靠性降低之傾向。On the other hand, if a thickness of the nickel conductive layer which does not contain both tungsten and molybdenum is thickened in order to obtain a larger effect of lowering the connection resistance or to make it suitable for a large current, there is a conductive particle. It tends to cause damage to the connecting member or the substrate. As a result, the conduction reliability between the electrodes of the connection structure tends to decrease.

相對於此,上述導電層X由於含有鎳、以及鎢及鉬中之 至少1種金屬成分M,故而容易使上述5%K值成為上述下限以上。進而,容易使得當以壓縮方向上壓縮前導電性粒子之粒徑的超過10%且25%以下而壓縮導電性粒子時,上述導電層X適度產生裂縫。藉由於受到適度壓縮時產生裂縫,變得更難以產生電極損傷,故而電極間之連接電阻進一步降低。In contrast, the conductive layer X contains nickel, tungsten, and molybdenum. Since at least one metal component M is used, it is easy to make the said 5% K value into the said minimum. Further, when the conductive particles are compressed by more than 10% and 25% or less of the particle diameter of the pre-conducting conductive particles in the compression direction, the conductive layer X is moderately cracked. Since cracks are generated when subjected to moderate compression, electrode damage is more difficult to occur, and the connection resistance between the electrodes is further lowered.

進而,上述導電層X由於含有鎳、以及鎢及鉬中之至少1種金屬成分M,故而上述導電層X具有適度之硬度,因此於壓縮導電性粒子而將電極間連接時,可於電極上形成適度之壓痕。再者,電極上所形成之壓痕係導電性粒子擠壓電極而成的電極之凹部。Further, since the conductive layer X contains nickel and at least one metal component M of tungsten and molybdenum, the conductive layer X has an appropriate hardness. Therefore, when the conductive particles are compressed and the electrodes are connected to each other, they can be formed on the electrodes. Form a moderate indentation. Further, the indentation formed on the electrode is a concave portion of the electrode formed by pressing the electrode with the conductive particles.

上述導電層X較佳為含有鎳作為主成分。就有效地降低電極間之初期之連接電阻之觀點而言,上述導電層X之整體100重量%中的鎳之含量越多越佳。因此,於上述導電層X之整體100重量%中,鎳之含量較佳為50重量%以上,更佳為60重量%以上,進而更佳為70重量%以上,進而較佳為75重量%以上,進一步較佳為80重量%以上,尤佳為85重量%以上,進一步尤佳為90重量%以上,最佳為95重量%以上。上述導電層X之整體100重量%中的鎳之含量亦可為97重量%以上,亦可為97.5重量%以上,亦可為98重量%以上。若上述鎳之含量為上述下限以上,則電極間之連接電阻進一步降低。又,於電極或導電層之表面之氧化被膜較少之情形時,有上述鎳之含量越多則電極間之連接電阻越降低之傾向。The conductive layer X preferably contains nickel as a main component. From the viewpoint of effectively reducing the initial connection resistance between the electrodes, the content of nickel in 100% by weight of the entire conductive layer X is preferably as large as possible. Therefore, the content of nickel in the entire 100% by weight of the conductive layer X is preferably 50% by weight or more, more preferably 60% by weight or more, still more preferably 70% by weight or more, and still more preferably 75% by weight or more. Further, it is more preferably 80% by weight or more, still more preferably 85% by weight or more, still more preferably 90% by weight or more, and most preferably 95% by weight or more. The content of nickel in 100% by weight of the entire conductive layer X may be 97% by weight or more, or may be 97.5% by weight or more, or may be 98% by weight or more. When the content of the nickel is at least the above lower limit, the connection resistance between the electrodes is further lowered. Further, when the amount of the oxide film on the surface of the electrode or the conductive layer is small, the connection resistance between the electrodes tends to decrease as the content of the nickel is increased.

鎳之含量之上限可藉由硼及上述金屬成分M之含量等而適當變更。上述導電層X之整體100重量%中鎳之含量較佳為99.9重量%以下,更佳為99.85重量%以下,進而較佳為99.7重量%以下,尤佳為未達99.45重量%。The upper limit of the content of nickel can be appropriately changed by the content of boron and the metal component M described above. The content of nickel in 100% by weight of the entire conductive layer X is preferably 99.9% by weight or less, more preferably 99.85% by weight or less, still more preferably 99.7% by weight or less, and particularly preferably less than 99.45% by weight.

於包含不含有硼之鎳導電層之導電性粒子中,該不含有硼之鎳導電層於壓縮初期階段相對柔軟,將電極間連接時,有排除電極及導電性粒子之表面之氧化被膜之效果變小,降低連接電阻之效果變小之傾向。又,導電層有含有磷而不含硼之情況。包含含有鎳及磷之導電層之導電性粒子有排除電極及導電性粒子之表面之氧化被膜之效果變小,降低連接電阻之效果容易變小之傾向。In the conductive particles containing the nickel-conducting layer containing no boron, the nickel-free conductive layer containing no boron is relatively soft in the initial stage of compression, and when the electrodes are connected to each other, the effect of removing the oxide film on the surface of the electrode and the conductive particles is obtained. It becomes smaller, and the effect of lowering the connection resistance becomes smaller. Further, the conductive layer may contain phosphorus and does not contain boron. The conductive particles containing the conductive layer containing nickel and phosphorus have a small effect of eliminating the oxide film on the surface of the electrode and the conductive particles, and the effect of lowering the connection resistance tends to be small.

另一方面,若為獲得更大的降低連接電阻之效果,或使得適合於流通較大電流之用途,而將不含有硼之導電層之厚度增厚,或將含有鎳及磷之導電層之厚度增厚,則有導電性粒子容易對連接對象構件或基板造成損傷之傾向。其結果,有連接構造體之電極間之導通可靠性降低之傾向。On the other hand, if a larger effect of lowering the connection resistance is obtained, or the application is suitable for a large current, the thickness of the conductive layer not containing boron is thickened, or a conductive layer containing nickel and phosphorus is used. When the thickness is increased, the conductive particles tend to cause damage to the connection member or the substrate. As a result, the conduction reliability between the electrodes of the connection structure tends to decrease.

相對於此,由於上述導電層X含有硼,故而容易使上述5%K值成為上述下限以上。進而,容易使得當以壓縮方向上壓縮前導電性粒子之粒徑的超過10%且25%以下而壓縮導電性粒子時,上述導電層X適度地產生裂縫。又,藉由使上述導電層X含有鎳、硼及上述金屬成分M,更容易使上述5%K值成為上述下限以上。進而,容易使得當以壓縮方向上壓縮前導電性粒子之粒徑的超過10%且25%以下而壓縮導電性粒子時,上述導電層X更適度地產生裂縫。藉 由於受到適度壓縮時產生裂縫,更不易產生電極之損傷,因此電極間之連接電阻進一步降低。On the other hand, since the conductive layer X contains boron, the 5% K value is likely to be equal to or higher than the lower limit. Further, when the conductive particles are compressed by more than 10% and 25% or less of the particle diameter of the pre-conducting conductive particles in the compression direction, the conductive layer X is moderately cracked. Moreover, by making the conductive layer X contain nickel, boron, and the metal component M, it is easier to make the 5% K value equal to or higher than the lower limit. Further, when the conductive particles are compressed by more than 10% and 25% or less of the particle diameter of the pre-conducting conductive particles in the compression direction, the conductive layer X is more appropriately cracked. borrow Since the crack is generated when moderately compressed, the damage of the electrode is less likely to occur, and the connection resistance between the electrodes is further lowered.

進而,由於上述導電層X含有硼,故而上述導電層X具有適度之硬度,因此更不易產生電極之損傷,故而電極間之連接電阻進一步降低。進而,由於上述導電層X含有硼,故而上述導電層X具有適度之硬度,因此於壓縮導電性粒子而將電極間連接時,可於電極上形成適度之壓痕。Further, since the conductive layer X contains boron, the conductive layer X has an appropriate hardness, so that damage of the electrode is less likely to occur, and the connection resistance between the electrodes is further lowered. Further, since the conductive layer X contains boron, the conductive layer X has an appropriate hardness. Therefore, when the conductive particles are compressed and the electrodes are connected to each other, an appropriate indentation can be formed on the electrodes.

尤其是由於上述導電層X含有鎳、硼及上述金屬成分M,因此可達成較高之壓縮彈性模數。因此,於將電極間連接時的導電性粒子之壓縮初期階段,可有效果地排除電極及導電性粒子之表面之氧化被膜,且於將電極間連接時導電性粒子受到適度壓縮之階段,上述導電層X產生裂縫,因此可抑制電極之損傷。其結果,可使所獲得之連接構造體中的電極間之連接電阻降低,並可提高電極間之導通可靠性。In particular, since the conductive layer X contains nickel, boron, and the above-described metal component M, a high compressive elastic modulus can be achieved. Therefore, in the initial stage of compression of the conductive particles when the electrodes are connected, the oxide film on the surface of the electrode and the conductive particles can be effectively removed, and the conductive particles are appropriately compressed at the time of connecting the electrodes. The conductive layer X generates cracks, so that damage of the electrodes can be suppressed. As a result, the connection resistance between the electrodes in the obtained connection structure can be lowered, and the conduction reliability between the electrodes can be improved.

上述導電層X之整體100重量%中硼之含量較佳為0.01重量%以上,更佳為0.05重量%以上,進而較佳為0.1重量%以上,且較佳為5重量%以下,更佳為4重量%以下,進而較佳為3重量%以下,尤佳為2.5重量%以下,最佳為2重量%以下。若硼之含量為上述下限以上,則上述導電層X變得更硬,可更有效果地除去電極及導電性粒子之表面之氧化被膜,並可進一步降低電極間之連接電阻。若硼之含量為上述上限以下,則鎳及上述金屬成分M之含量相對增多,故而電極間之連接電阻降低。The content of boron in 100% by weight of the entire conductive layer X is preferably 0.01% by weight or more, more preferably 0.05% by weight or more, further preferably 0.1% by weight or more, and preferably 5% by weight or less, more preferably 4% by weight or less, further preferably 3% by weight or less, particularly preferably 2.5% by weight or less, and most preferably 2% by weight or less. When the content of boron is at least the above lower limit, the conductive layer X becomes harder, and the oxide film on the surface of the electrode and the conductive particles can be removed more effectively, and the connection resistance between the electrodes can be further reduced. When the content of boron is at most the above upper limit, the content of nickel and the metal component M is relatively increased, so that the connection resistance between the electrodes is lowered.

又,含有鎳及硼之上述導電層X之表面之磁性較高,於將電極間電性連接之情形時,由於因磁性而凝集之導電性粒子之影響,存在橫方向上鄰接之電極間較容易連接之傾向。由於上述導電層X含有鎳、硼及上述金屬成分M,因此上述導電層X之表面之磁性顯著降低。因此,可抑制複數個導電性粒子凝集。因此,於將電極間電性連接之情形時,可抑制因凝集之導電性粒子而使橫方向上鄰接之電極間連接的情況。即,可進一步防止相鄰之電極間之短路。Further, the surface of the conductive layer X containing nickel and boron has a high magnetic property, and when the electrodes are electrically connected to each other, the electrodes adjacent to each other in the lateral direction are affected by the conductive particles agglomerated by the magnetic properties. The tendency to connect easily. Since the conductive layer X contains nickel, boron, and the above-described metal component M, the magnetic properties of the surface of the conductive layer X are remarkably lowered. Therefore, aggregation of a plurality of conductive particles can be suppressed. Therefore, when the electrodes are electrically connected to each other, it is possible to suppress the connection between the adjacent electrodes in the lateral direction due to the aggregated conductive particles. That is, the short circuit between adjacent electrodes can be further prevented.

進而,由於上述導電層X含有上述金屬成分M,故而上述導電層X具有適度之硬度,因此於壓縮導電性粒子而將電極間連接時,可於電極上形成適度之壓痕。進而,藉由使上述導電層X含有鎢及鉬中之至少1種,或者含有硼,上述導電層X顯著變硬,結果即便對藉由導電性粒子將電極間連接之連接構造體施加衝擊,亦不易產生導通不良。即,亦可提高連接構造體之耐衝擊性。Further, since the conductive layer X contains the metal component M, the conductive layer X has an appropriate hardness. Therefore, when the conductive particles are compressed and the electrodes are connected to each other, an appropriate indentation can be formed on the electrode. Further, when the conductive layer X contains at least one of tungsten and molybdenum or contains boron, the conductive layer X is remarkably hard, and as a result, even if the connection structure is connected to the connection structure between the electrodes by the conductive particles, It is also not easy to cause poor conduction. That is, the impact resistance of the connection structure can also be improved.

上述導電層X之整體100重量%中上述金屬成分M之含量(鎢及鉬之合計含量)較佳為0.01重量%以上,更佳為0.1重量%以上,進而更佳為0.2重量%以上,進而較佳為0.5重量%以上,進一步較佳為1重量%以上,尤佳為超過5重量%,最佳為10重量%以上。若上述金屬成分M之含量為上述下限以上,則導電層之外表面之硬度進一步提高。因此,於電極或導電層之表面形成有氧化被膜之情形時,可有效果地排除電極及導電性粒子之表面之氧化被膜,進而可有效果地排除電極與導電性粒子之間之樹脂成分,連接 電阻降低,且所獲得之連接構造體之耐衝擊性提高。進而,若上述金屬成分M之含量為上述下限以上,則上述導電層X之外表面之磁性減弱,難以產生複數個導電性粒子之凝集。因此,可有效地抑制電極間之短路。The content of the metal component M (the total content of tungsten and molybdenum) in 100% by weight of the entire conductive layer X is preferably 0.01% by weight or more, more preferably 0.1% by weight or more, still more preferably 0.2% by weight or more, and further It is preferably 0.5% by weight or more, more preferably 1% by weight or more, still more preferably 5% by weight or more, and most preferably 10% by weight or more. When the content of the metal component M is at least the above lower limit, the hardness of the outer surface of the conductive layer is further improved. Therefore, when an oxide film is formed on the surface of the electrode or the conductive layer, the oxide film on the surface of the electrode and the conductive particle can be effectively removed, and the resin component between the electrode and the conductive particle can be effectively removed. connection The electric resistance is lowered, and the impact resistance of the obtained joined structure is improved. Further, when the content of the metal component M is at least the above lower limit, the magnetic properties of the outer surface of the conductive layer X are weakened, and aggregation of a plurality of conductive particles is less likely to occur. Therefore, the short circuit between the electrodes can be effectively suppressed.

上述導電層X之整體100重量%中上述金屬成分M之含量之上限可藉由鎳及硼之含量等而適當變更。上述導電層X之整體100重量%中上述金屬成分M之含量較佳為40重量%以下,更佳為30重量%以下,進而較佳為25重量%以下,尤佳為20重量%以下。The upper limit of the content of the metal component M in 100% by weight of the entire conductive layer X can be appropriately changed by the content of nickel and boron. The content of the metal component M in 100% by weight of the entire conductive layer X is preferably 40% by weight or less, more preferably 30% by weight or less, further preferably 25% by weight or less, and particularly preferably 20% by weight or less.

又,於上述導電層X含有鎢之情形時,上述導電層X之整體100重量%中鎢之含量較佳為0.01重量%以上,更佳為0.1重量%以上,進而更佳為0.2重量%以上,進而較佳為0.5重量%以上,進一步較佳為1重量%以上,尤佳為超過5重量%,最佳為10重量%以上,且較佳為40重量%以下,更佳為30重量%以下,進而較佳為25重量%以下,尤佳為20重量%以下。於上述導電層X含有鉬之情形時,上述導電層X之整體100重量%中鉬之含量較佳為0.01重量%以上,更佳為0.1重量%以上,進而更佳為0.2重量%以上,進而較佳為0.5重量%以上,進一步較佳為1重量%以上,尤佳為超過5重量%,最佳為10重量%以上,且較佳為40重量%以下,更佳為30重量%以下,進而較佳為25重量%以下,尤佳為20重量%以下。Further, when the conductive layer X contains tungsten, the content of tungsten in 100% by weight of the entire conductive layer X is preferably 0.01% by weight or more, more preferably 0.1% by weight or more, and still more preferably 0.2% by weight or more. Further, it is preferably 0.5% by weight or more, further preferably 1% by weight or more, particularly preferably more than 5% by weight, most preferably 10% by weight or more, and preferably 40% by weight or less, more preferably 30% by weight. Hereinafter, it is more preferably 25% by weight or less, and still more preferably 20% by weight or less. When the conductive layer X contains molybdenum, the content of molybdenum in 100% by weight of the entire conductive layer X is preferably 0.01% by weight or more, more preferably 0.1% by weight or more, still more preferably 0.2% by weight or more, and further It is preferably 0.5% by weight or more, more preferably 1% by weight or more, even more preferably 5% by weight, most preferably 10% by weight or more, and preferably 40% by weight or less, more preferably 30% by weight or less. Further, it is preferably 25% by weight or less, and particularly preferably 20% by weight or less.

就有效地降低電極間之初期之連接電阻之觀點而言,上述導電層X之整體100重量%中上述鎳與上述金屬成分M的 合計含量越多越佳。因此,上述導電層X之整體100重量%中,鎳與上述金屬成分M之合計含量較佳為75.1重量%以上,更佳為80.1重量%以上,進而較佳為85.1重量%以上,尤佳為90.1重量%以上,最佳為95.1重量%以上。上述導電層X之整體100重量%中鎳與上述金屬成分M之合計含量亦可為97.1重量%以上,亦可為97.6重量%以上,亦可為98.1重量%以上。The nickel and the metal component M in the entire 100% by weight of the conductive layer X in terms of effectively reducing the initial connection resistance between the electrodes The more the total content, the better. Therefore, the total content of nickel and the metal component M in 100% by weight of the entire conductive layer X is preferably 75.1% by weight or more, more preferably 80.1% by weight or more, still more preferably 85.1% by weight or more, and particularly preferably 90.1% by weight or more, preferably 95.1% by weight or more. The total content of nickel and the metal component M in 100% by weight of the entire conductive layer X may be 97.1% by weight or more, or 97.6% by weight or more, or 98.1% by weight or more.

就進一步降低電極間之連接電阻之觀點而言,較佳為上述導電層X不含有磷,或者上述導電層X含有磷且上述導電層X之整體100重量%中磷之含量未達1重量%。就進而降低電極間之連接電阻之觀點而言,更佳為上述導電層X不含有磷,或者上述導電層X含有磷且上述導電層X之整體100重量%中磷之含量未達0.5重量%。就更有效地降低電極間之連接電阻之觀點而言,上述導電層X之整體100重量%中磷之含量更佳為0.3重量%以下,進而較佳為0.1重量%以下。若磷之含量為上述上限以下,則將電極間連接時,可更有效果地排除電極及導電性粒子之表面之氧化被膜。其結果,可降低電極間之連接電阻。進而,可有效果地排除電極與導電性粒子之間之樹脂成分,因此電極間之連接電阻進一步降低。就使電極間之連接電阻顯著降低而言,尤佳為上述導電層X不含有磷。In view of further reducing the connection resistance between the electrodes, it is preferable that the conductive layer X does not contain phosphorus, or the conductive layer X contains phosphorus and the content of phosphorus in the entire 100% by weight of the conductive layer X is less than 1% by weight. . Further, in view of further reducing the connection resistance between the electrodes, it is more preferable that the conductive layer X does not contain phosphorus, or the conductive layer X contains phosphorus and the content of phosphorus in the entire 100% by weight of the conductive layer X is less than 0.5% by weight. . From the viewpoint of more effectively reducing the connection resistance between the electrodes, the content of phosphorus in 100% by weight of the entire conductive layer X is more preferably 0.3% by weight or less, still more preferably 0.1% by weight or less. When the content of phosphorus is at most the above upper limit, when the electrodes are connected to each other, the oxide film on the surface of the electrode and the conductive particles can be more effectively removed. As a result, the connection resistance between the electrodes can be reduced. Further, since the resin component between the electrode and the conductive particles can be effectively removed, the connection resistance between the electrodes is further lowered. In order to remarkably reduce the connection resistance between the electrodes, it is particularly preferable that the above-mentioned conductive layer X does not contain phosphorus.

尤其是於上述導電層X含有上述金屬成分M,且磷之含量為上述上限以下,進而上述導電層X於外表面具有突起之情形時,可更有效果地排除電極及導電性粒子之表面之 氧化被膜,進而可有效果地排除電極與導電性粒子之間之樹脂成分,可進一步降低連接電阻。In particular, when the conductive layer X contains the metal component M and the phosphorus content is not more than the above upper limit, and the conductive layer X has protrusions on the outer surface, the surface of the electrode and the conductive particles can be more effectively removed. By oxidizing the film, the resin component between the electrode and the conductive particles can be effectively removed, and the connection resistance can be further reduced.

進而,藉由使上述導電層X含有上述金屬成分M,且磷之含量為上述上限以下,上述導電層X顯著變硬,結果即便對藉由導電性粒子將電極間連接之連接構造體施加衝擊,亦不易產生導通不良。即,亦可提高連接構造體之耐衝擊性。Further, when the conductive layer X contains the metal component M and the content of phosphorus is not more than the above upper limit, the conductive layer X is remarkably hard, and as a result, even a connection structure in which electrodes are connected by an electroconductive particle is impacted. It is also not easy to cause poor conduction. That is, the impact resistance of the connection structure can also be improved.

上述導電層X中之鎳、硼、鎢、鉬及磷之各含量之測定方法可使用已知之各種分析方法,並無特別限定。作為該測定方法,可列舉:吸光分析法或光譜分析法等。於上述吸光分析法中,可使用火焰式吸光光度計及電熱爐吸光光度計等。作為上述光譜分析法,可列舉:電漿發射光譜分析法及電漿離子源質譜分析法等。The method for measuring the respective contents of nickel, boron, tungsten, molybdenum and phosphorus in the above-mentioned conductive layer X can be any known analytical method, and is not particularly limited. Examples of the measurement method include an absorbance analysis method and a spectroscopic analysis method. In the above absorption analysis method, a flame absorptiometer, an electric furnace absorptiometer, or the like can be used. Examples of the spectral analysis method include a plasma emission spectrometry method and a plasma ion source mass spectrometry method.

測定上述導電層X中之鎳、硼、鎢、鉬及磷之各含量時,較佳為使用ICP(Inductively Coupled Plasma,感應耦合電漿)發射光譜分析裝置。作為ICP發射光譜分析裝置之市售品,可列舉HORIBA公司製造之ICP發射光譜分析裝置等。又,於測定上述導電層X中之鎳、硼、鎢、鉬及磷之各含量時,亦可使用ICP-MS(Inductively coupled plasma mass spectrometry,感應耦合電漿質譜)分析儀。When the respective contents of nickel, boron, tungsten, molybdenum and phosphorus in the conductive layer X are measured, an ICP (Inductively Coupled Plasma) emission spectrometer is preferably used. As a commercial item of the ICP emission spectrum analyzer, an ICP emission spectrum analyzer manufactured by HORIBA Co., Ltd., etc. are mentioned. Further, when measuring the respective contents of nickel, boron, tungsten, molybdenum and phosphorus in the conductive layer X, an ICP-MS (Inductively Coupled Plasma Mass Spectrometry) analyzer may be used.

用以形成上述其他導電層(第2導電層)之金屬並無特別限定。作為該金屬,例如可列舉:金、銀、銅、鈀、鉑、鋅、鐵、錫、鉛、鋁、鈷、銦、鎳、鉻、鈦、銻、鉍、鉈、鍺、鎘、矽、鎢及該等之合金等。又,作為上述金 屬,亦可列舉摻錫之氧化銦(ITO)及焊錫等。其中,較佳為含有錫之合金、鎳、鈀、銅或金,更佳為鎳或鈀,原因在於電極間之連接電阻進一步降低。構成上述其他導電層之金屬較佳為含有鎳。The metal for forming the other conductive layer (second conductive layer) is not particularly limited. Examples of the metal include gold, silver, copper, palladium, platinum, zinc, iron, tin, lead, aluminum, cobalt, indium, nickel, chromium, titanium, lanthanum, cerium, lanthanum, cerium, cadmium, cerium, Tungsten and these alloys. Again, as the above gold The genus may also include tin-doped indium oxide (ITO) and solder. Among them, an alloy containing tin, nickel, palladium, copper or gold is preferred, and nickel or palladium is more preferred because the connection resistance between the electrodes is further lowered. The metal constituting the other conductive layer preferably contains nickel.

於上述基材粒子之表面上形成導電層(其他導電層及導電層X)之方法並無特別限定。作為形成導電層之方法,例如可列舉:利用非電解鍍敷之方法、利用電鍍之方法、利用物理蒸鍍之方法、以及於基材粒子或其他導電層之表面塗佈金屬粉末或者含有金屬粉末及黏合劑之膏劑的方法等。其中,利用非電解鍍敷之方法由於形成導電層較為簡便因而較佳。作為上述利用物理蒸鍍之方法,可列舉:真空蒸鍍、離子電鍍(ion plating)及離子濺鍍(ion sputtering)等方法。A method of forming a conductive layer (other conductive layer and conductive layer X) on the surface of the substrate particles is not particularly limited. Examples of the method of forming the conductive layer include a method using electroless plating, a method using electroplating, a method using physical vapor deposition, and coating a metal powder or a metal powder on the surface of a substrate particle or another conductive layer. And the method of the adhesive paste, and the like. Among them, the method using electroless plating is preferable because it is relatively simple to form a conductive layer. Examples of the method using physical vapor deposition include vacuum deposition, ion plating, and ion sputtering.

上述導電性粒子之粒徑較佳為0.1 μm以上,更佳為0.5 μm以上,進而較佳為1 μm以上,尤佳為2 μm以上,且較佳為1000 μm以下,更佳為500 μm以下,進而更佳為300 μm以下,進而較佳為100 μm以下,進一步較佳為50 μm以下,尤佳為30 μm以下,進一步尤佳為20 μm以下,最佳為5 μm以下。若導電性粒子之粒徑為上述下限以上及上述上限以下,則於使用導電性粒子將電極間連接之情形時,導電性粒子與電極之接觸面積充分變大,且形成導電層時不易形成凝集之導電性粒子。又,經由導電性粒子而連接之電極間的間隔不會過大,且導電層不易自基材粒子之表面剝離。The particle diameter of the conductive particles is preferably 0.1 μm or more, more preferably 0.5 μm or more, further preferably 1 μm or more, particularly preferably 2 μm or more, and more preferably 1000 μm or less, and more preferably 500 μm or less. More preferably, it is 300 μm or less, further preferably 100 μm or less, further preferably 50 μm or less, particularly preferably 30 μm or less, further preferably 20 μm or less, and most preferably 5 μm or less. When the particle diameter of the conductive particles is not less than the above lower limit and not more than the above upper limit, when the electrodes are connected by using the conductive particles, the contact area between the conductive particles and the electrode is sufficiently increased, and aggregation is less likely to occur when the conductive layer is formed. Conductive particles. Moreover, the interval between the electrodes connected via the conductive particles is not excessively large, and the conductive layer is not easily peeled off from the surface of the substrate particles.

又,使用於各向異性導電材料等導電材料時導電性粒子之粒徑較佳為0.5 μm以上,更佳為1 μm以上,且較佳為100 μm以下,更佳為20 μm以下。若導電性粒子之粒徑為上述下限以上及上述上限以下,則於使用導電性粒子將電極間連接之情形時,導電性粒子與電極之接觸面積充分變大,且形成導電層時不易形成凝集之導電性粒子。又,經由導電性粒子而連接之電極間的間隔不會過大,且導電層不易自基材粒子之表面剝離。Further, when used for a conductive material such as an anisotropic conductive material, the particle diameter of the conductive particles is preferably 0.5 μm or more, more preferably 1 μm or more, and is preferably 100 μm or less, and more preferably 20 μm or less. When the particle diameter of the conductive particles is not less than the above lower limit and not more than the above upper limit, when the electrodes are connected by using the conductive particles, the contact area between the conductive particles and the electrode is sufficiently increased, and aggregation is less likely to occur when the conductive layer is formed. Conductive particles. Moreover, the interval between the electrodes connected via the conductive particles is not excessively large, and the conductive layer is not easily peeled off from the surface of the substrate particles.

關於上述導電性粒子之粒徑,於導電性粒子為圓球狀之情形時係表示直徑,於導電性粒子不為圓球狀之情形時係表示最大直徑。The particle diameter of the conductive particles is a diameter when the conductive particles are spherical, and indicates a maximum diameter when the conductive particles are not spherical.

上述導電層X之厚度較佳為0.005 μm以上,更佳為0.01 μm以上,進而較佳為0.05 μm以上,且較佳為1 μm以下,更佳為0.3 μm以下。若上述導電層X之厚度為上述下限以上及上述上限以下,則可獲得充分之導電性,且導電性粒子不會過硬,將電極間連接時導電性粒子可充分地產生變形。The thickness of the conductive layer X is preferably 0.005 μm or more, more preferably 0.01 μm or more, further preferably 0.05 μm or more, and preferably 1 μm or less, more preferably 0.3 μm or less. When the thickness of the conductive layer X is not less than the above lower limit and not more than the above upper limit, sufficient conductivity can be obtained, and the conductive particles are not excessively hard, and the conductive particles can be sufficiently deformed when the electrodes are connected to each other.

於導電層為雙層以上之積層構造之情形時,導電層X之厚度較佳為0.001 μm以上,更佳為0.01 μm以上,進而較佳為0.05 μm以上,且較佳為0.5 μm以下,更佳為0.3 μm以下,進而較佳為0.1 μm以下。若上述導電層X之厚度為上述下限以上及上述上限以下,則可使導電層X之被覆均勻,且電極間之連接電阻充分降低。In the case where the conductive layer has a laminated structure of two or more layers, the thickness of the conductive layer X is preferably 0.001 μm or more, more preferably 0.01 μm or more, further preferably 0.05 μm or more, and preferably 0.5 μm or less. It is preferably 0.3 μm or less, and more preferably 0.1 μm or less. When the thickness of the conductive layer X is not less than the above lower limit and not more than the above upper limit, the coating of the conductive layer X can be made uniform, and the connection resistance between the electrodes can be sufficiently lowered.

於導電層為雙層以上之積層構造之情形時,包含導電層 X在內之導電層整體之厚度較佳為0.001 μm以上,更佳為0.01 μm以上,進而較佳為0.05 μm以上,尤佳為0.1 μm以上,且較佳為1 μm以下,更佳為0.5 μm以下,進而更佳為0.3 μm以下,進而較佳為0.1 μm以下。若上述導電層整體之厚度為上述下限以上及上述上限以下,則可使導電層整體之被覆均勻,且電極間之連接電阻充分降低。In the case where the conductive layer is a double layer or more laminated structure, the conductive layer is included The thickness of the entire conductive layer inside X is preferably 0.001 μm or more, more preferably 0.01 μm or more, further preferably 0.05 μm or more, particularly preferably 0.1 μm or more, and preferably 1 μm or less, more preferably 0.5 or less. It is preferably not more than μm, more preferably 0.3 μm or less, still more preferably 0.1 μm or less. When the thickness of the entire conductive layer is not less than the above lower limit and not more than the above upper limit, the entire conductive layer can be uniformly coated, and the connection resistance between the electrodes can be sufficiently lowered.

上述導電層X之厚度尤佳為0.05 μm以上、0.5 μm以下。進而,尤佳為基材粒子之粒徑為2 μm以上、5 μm以下,且上述導電層X之厚度為0.05 μm以上、0.5 μm以下。上述導電層X之厚度最佳為0.05 μm以上、0.3 μm以下。進而,最佳為基材粒子之粒徑為2 μm以上、5 μm以下,且上述導電層X之厚度為0.05 μm以上、0.3 μm以下。若滿足該等較佳之上述導電層X之厚度及基材粒子之粒徑,則可將導電性粒子更適合地用於流通較大電流之用途。進而,於壓縮導電性粒子而將電極間連接之情形時,可進一步抑制電極損傷。The thickness of the conductive layer X is particularly preferably 0.05 μm or more and 0.5 μm or less. Further, it is particularly preferable that the particle diameter of the substrate particles is 2 μm or more and 5 μm or less, and the thickness of the conductive layer X is 0.05 μm or more and 0.5 μm or less. The thickness of the conductive layer X is preferably 0.05 μm or more and 0.3 μm or less. Further, it is preferable that the particle diameter of the substrate particles is 2 μm or more and 5 μm or less, and the thickness of the conductive layer X is 0.05 μm or more and 0.3 μm or less. When the thickness of the above-mentioned preferred conductive layer X and the particle diameter of the substrate particles are satisfied, the conductive particles can be more suitably used for applications in which a large current flows. Further, when the conductive particles are compressed and the electrodes are connected to each other, the electrode damage can be further suppressed.

上述導電層X之厚度及上述導電層整體之厚度例如可藉由使用透過型電子顯微鏡(TEM)觀察導電性粒子之剖面而測定。The thickness of the conductive layer X and the thickness of the entire conductive layer can be measured, for example, by observing a cross section of the conductive particles using a transmission electron microscope (TEM).

作為控制上述導電層X中之鎳、鎢、鉬、硼及磷之含量之方法,例如可列舉:於藉由非電解鍍鎳而形成導電層X時,控制鍍鎳液之pH值之方法;於藉由非電解鍍鎳而形成導電層X時,調整含硼之還原劑的濃度之方法;調整鍍鎳液中之鎢濃度之方法;調整鍍鎳液中之鉬濃度之方法;及 調整鍍鎳液中之鎳鹽濃度之方法等。As a method of controlling the content of nickel, tungsten, molybdenum, boron, and phosphorus in the conductive layer X, for example, a method of controlling the pH of the nickel plating solution when the conductive layer X is formed by electroless nickel plating is exemplified; a method for adjusting a concentration of a boron-containing reducing agent when forming a conductive layer X by electroless nickel plating; a method of adjusting a tungsten concentration in a nickel plating solution; and a method of adjusting a concentration of molybdenum in the nickel plating solution; A method of adjusting the nickel salt concentration in the nickel plating solution.

於藉由非電解鍍敷而形成導電層之方法中,一般而言會進行觸媒化步驟及非電解鍍敷步驟。以下,說明藉由非電解鍍敷於樹脂粒子之表面形成含有鎳、鎢及鉬中之至少1種以及硼之合金鍍敷層的方法之一例。In the method of forming a conductive layer by electroless plating, a catalytic step and an electroless plating step are generally performed. Hereinafter, an example of a method of forming an alloy plating layer containing at least one of nickel, tungsten, and molybdenum and boron by electroless plating on the surface of the resin particles will be described.

於上述觸媒化步驟中,於樹脂粒子之表面形成觸媒,該觸媒係成為用以藉由非電解鍍敷形成鍍敷層之起點。In the above-described catalytic treatment step, a catalyst is formed on the surface of the resin particles, and the catalyst serves as a starting point for forming a plating layer by electroless plating.

作為於樹脂粒子之表面形成上述觸媒之方法,例如可列舉以下等方法:於含有氯化鈀及氯化錫之溶液中添加樹脂粒子後,藉由酸溶液或鹼溶液使樹脂粒子之表面活化,使鈀析出於樹脂粒子之表面;以及於含有硫酸鈀及胺基吡啶之溶液中添加樹脂粒子後,藉由含有還原劑之溶液使樹脂粒子之表面活化,使鈀析出於樹脂粒子之表面之方法等。作為上述還原劑,可較佳地使用含硼之還原劑。其中,上述還原劑亦可使用次亞磷酸鈉等含磷之還原劑。As a method of forming the above-mentioned catalyst on the surface of the resin particles, for example, a method of adding a resin particle to a solution containing palladium chloride and tin chloride and then activating the surface of the resin particle by an acid solution or an alkali solution may be mentioned. Palladium is deposited on the surface of the resin particles; and after the resin particles are added to the solution containing palladium sulfate and aminopyridine, the surface of the resin particles is activated by a solution containing a reducing agent to precipitate palladium on the surface of the resin particles. Method, etc. As the reducing agent, a boron-containing reducing agent can be preferably used. Among them, a phosphorus-containing reducing agent such as sodium hypophosphite may be used as the reducing agent.

於上述非電解鍍敷步驟中,可使用含有鎳鹽、含鎢之化合物及含鉬之化合物中之至少1種、及上述含硼之還原劑的鍍鎳浴。藉由將樹脂粒子浸漬於鍍鎳浴中,可使鎳析出於表面形成有觸媒之樹脂粒子之表面,可形成含有鎳、硼及上述金屬成分M之導電層。In the electroless plating step, a nickel plating bath containing at least one of a nickel salt, a tungsten-containing compound, and a molybdenum-containing compound, and the boron-containing reducing agent may be used. By immersing the resin particles in a nickel plating bath, nickel can be deposited on the surface of the catalyst-forming resin particles, and a conductive layer containing nickel, boron, and the metal component M can be formed.

作為上述含鎢之化合物,可列舉硼化鎢及鎢酸鈉等。Examples of the tungsten-containing compound include tungsten boride and sodium tungstate.

作為上述含鉬之化合物,可列舉硼化鉬及鉬酸鈉等。Examples of the molybdenum-containing compound include molybdenum boride and sodium molybdate.

作為上述含硼之還原劑,可列舉二甲胺硼烷、硼氫化鈉及硼氫化鉀等。Examples of the boron-containing reducing agent include dimethylamine borane, sodium borohydride, and potassium borohydride.

本發明之導電性粒子較佳為於表面具有突起。較佳為包含上述導電層X之導電層於外表面具有突起,且較佳為上述導電層X於外表面具有突起。藉由導電性粒子而連接之電極之表面多形成有氧化被膜。進而,導電性粒子之導電層之表面多形成有氧化被膜。若使用具有突起之導電性粒子,則藉由於電極間配置導電性粒子後進行壓接,可利用突起而有效果地排除氧化被膜。因此,可使電極與導電性粒子更確實地接觸,可降低電極間之連接電阻。進而,於導電性粒子表面具有絕緣物質之情形時,或者將導電性粒子分散於黏合劑樹脂中而用作導電材料之情形時,藉由導電性粒子之突起可有效果地排除導電性粒子與電極之間之樹脂。因此,電極間之導通可靠性提高。The conductive particles of the present invention preferably have protrusions on the surface. Preferably, the conductive layer including the conductive layer X has protrusions on the outer surface, and it is preferable that the conductive layer X has protrusions on the outer surface. An oxide film is often formed on the surface of the electrode connected by the conductive particles. Further, an oxide film is formed on the surface of the conductive layer of the conductive particles. When the conductive particles having the protrusions are used, the conductive particles are placed between the electrodes and then pressure-bonded, whereby the oxide film can be effectively removed by the protrusions. Therefore, the electrode can be brought into more sure contact with the conductive particles, and the connection resistance between the electrodes can be reduced. Further, when the surface of the conductive particles has an insulating material, or when the conductive particles are dispersed in the binder resin and used as a conductive material, the conductive particles can be effectively removed by the protrusions of the conductive particles. The resin between the electrodes. Therefore, the conduction reliability between the electrodes is improved.

上述突起較佳為複數個。每個上述導電性粒子中上述導電層之外表面之突起較佳為3個以上,更佳為5個以上。上述突起之數量之上限並無特別限定。突起之數量之上限可考慮導電性粒子之粒徑等而適當選擇。The above protrusions are preferably plural. The number of protrusions on the outer surface of the above-mentioned conductive layer in each of the above-mentioned conductive particles is preferably three or more, and more preferably five or more. The upper limit of the number of the above protrusions is not particularly limited. The upper limit of the number of the protrusions can be appropriately selected in consideration of the particle diameter of the conductive particles and the like.

[芯物質][core material]

藉由將上述芯物質埋入於上述導電層中,容易使上述導電層於外表面具有複數個突起。但是,為於導電性粒子及導電層之表面形成突起,並非必需使用芯物質。By embedding the core material in the conductive layer, the conductive layer is easily provided with a plurality of protrusions on the outer surface. However, in order to form protrusions on the surfaces of the conductive particles and the conductive layer, it is not necessary to use a core material.

作為形成上述突起之方法,可列舉以下等方法:使芯物質附著於基材粒子之表面後,藉由非電解鍍敷而形成導電層;以及藉由非電解鍍敷於基材粒子之表面形成導電層後,使芯物質附著,進而藉由非電解鍍敷形成導電層。Examples of the method for forming the protrusion include a method in which a core material is adhered to the surface of the substrate particle, and then a conductive layer is formed by electroless plating; and electroless plating is formed on the surface of the substrate particle. After the conductive layer, the core material is attached, and the conductive layer is formed by electroless plating.

作為於上述基材粒子之表面上配置芯物質之方法,例如可列舉以下等方法:於基材粒子之分散液中添加成為芯物質之導電性物質,例如藉由凡得瓦耳力(Van der Waals force)使芯物質積聚、附著於基材粒子之表面;以及於裝有基材粒子之容器中添加成為芯物質之導電性物質,利用容器之旋轉等機械作用使芯物質附著於基材粒子之表面。其中,使芯物質積聚、附著於分散液中之基材粒子之表面的方法由於容易控制所附著之芯物質之量因而較佳。As a method of disposing the core material on the surface of the substrate particle, for example, a method of adding a conductive substance to be a core material to a dispersion of the substrate particles, for example, by Van der Waals The core material is accumulated and adhered to the surface of the substrate particles; and the conductive material serving as the core material is added to the container containing the substrate particles, and the core material is attached to the substrate particles by mechanical action such as rotation of the container. surface. Among them, the method of accumulating and adhering the core material to the surface of the substrate particles in the dispersion liquid is preferable because it is easy to control the amount of the core material to be attached.

作為構成上述芯物質之導電性物質,例如可列舉:金屬、金屬之氧化物、石墨等導電性非金屬及導電性聚合物等。作為導電性聚合物,可列舉聚乙炔等。其中,金屬由於可提高導電性,並且可有效地降低連接電阻因而較佳。上述芯物質較佳為金屬粒子。Examples of the conductive material constituting the core material include a metal, a metal oxide, a conductive non-metal such as graphite, and a conductive polymer. Examples of the conductive polymer include polyacetylene and the like. Among them, metal is preferable because it can improve conductivity and can effectively reduce the connection resistance. The core material is preferably a metal particle.

作為上述金屬,例如可列舉:金、銀、銅、鉑、鋅、鐵、鉛、錫、鋁、鈷、銦、鎳、鉻、鈦、銻、鉍、鍺及鎘等金屬,以及錫-鉛合金、錫-銅合金、錫-銀合金及錫-鉛-銀合金等包含2種以上之金屬的合金等。其中,較佳為鎳、銅、銀或金。構成上述芯物質之金屬可與構成上述導電層之金屬相同,亦可不同。構成上述芯物質之金屬較佳為含有構成上述導電層之金屬。構成上述芯物質之金屬較佳為含有鎳。構成上述芯物質之金屬較佳為含有鎳。Examples of the metal include metals such as gold, silver, copper, platinum, zinc, iron, lead, tin, aluminum, cobalt, indium, nickel, chromium, titanium, ruthenium, osmium, iridium, and cadmium, and tin-lead. An alloy containing two or more kinds of metals such as an alloy, a tin-copper alloy, a tin-silver alloy, and a tin-lead-silver alloy. Among them, nickel, copper, silver or gold is preferred. The metal constituting the core material may be the same as or different from the metal constituting the above-mentioned conductive layer. The metal constituting the core material preferably contains a metal constituting the above-mentioned conductive layer. The metal constituting the above core material preferably contains nickel. The metal constituting the above core material preferably contains nickel.

上述芯物質之形狀並無特別限定。芯物質之形狀較佳為塊狀。作為芯物質,例如可列舉:粒子狀之塊、複數個微粒子凝集而成之凝集塊及不定形之塊等。The shape of the core material is not particularly limited. The shape of the core material is preferably a block shape. Examples of the core material include a particulate block, agglomerates in which a plurality of fine particles are aggregated, and an amorphous block.

上述芯物質之平均直徑(平均粒徑)較佳為0.001 μm以上,更佳為0.05 μm以上,且較佳為0.9 μm以下,更佳為0.2 μm以下。若上述芯物質之平均直徑為上述下限以上及上述上限以下,則可有效地降低電極間之連接電阻。The average diameter (average particle diameter) of the core material is preferably 0.001 μm or more, more preferably 0.05 μm or more, and is preferably 0.9 μm or less, more preferably 0.2 μm or less. When the average diameter of the core material is not less than the above lower limit and not more than the above upper limit, the connection resistance between the electrodes can be effectively reduced.

上述芯物質之「平均直徑(平均粒徑)」係表示數量平均直徑(數量平均粒徑)。芯物質之平均直徑可藉由利用電子顯微鏡或光學顯微鏡觀察任意50個芯物質,並算出平均值而求得。The "average diameter (average particle diameter)" of the above-mentioned core substance means a number average diameter (number average particle diameter). The average diameter of the core material can be determined by observing an arbitrary 50 core materials by an electron microscope or an optical microscope and calculating an average value.

[絕緣物質][insulating substance]

本發明之導電性粒子較佳為包含配置於上述導電層之表面上的絕緣物質。於此情形時,若將導電性粒子用於電極間之連接,則可防止鄰接之電極間之短路。具體而言,當複數個導電性粒子相接觸時,複數個電極間存在絕緣物質,故而可防止橫方向上相鄰之電極間而非上下之電極間之短路。再者,將電極間連接時,藉由以2個電極對導電性粒子加壓,可容易地排除導電性粒子之導電層與電極之間的絕緣物質。由於導電性粒子於導電層之外表面具有複數個突起,故而可容易地排除導電性粒子之導電層與電極之間之絕緣物質。The conductive particles of the present invention preferably comprise an insulating material disposed on the surface of the conductive layer. In this case, when the conductive particles are used for the connection between the electrodes, the short circuit between the adjacent electrodes can be prevented. Specifically, when a plurality of conductive particles are in contact with each other, an insulating material exists between the plurality of electrodes, so that a short circuit between the adjacent electrodes in the lateral direction and not between the upper and lower electrodes can be prevented. Further, when the electrodes are connected to each other, the conductive particles between the conductive layers of the conductive particles and the electrodes can be easily removed by pressurizing the conductive particles with the two electrodes. Since the conductive particles have a plurality of protrusions on the outer surface of the conductive layer, the insulating material between the conductive layer of the conductive particles and the electrode can be easily excluded.

上述絕緣物質較佳為絕緣性粒子,原因在於將電極間壓接時可更容易地排除上述絕緣物質。The insulating material is preferably an insulating particle because the insulating material can be more easily removed when the electrodes are pressure-bonded.

作為上述絕緣物質之材料的絕緣性樹脂之具體例可列舉:聚烯烴類、(甲基)丙烯酸酯聚合物、(甲基)丙烯酸酯共聚物、嵌段聚合物、熱塑性樹脂、熱塑性樹脂之交聯 物、熱硬化性樹脂及水溶性樹脂等。Specific examples of the insulating resin as the material of the insulating material include a polyolefin, a (meth) acrylate polymer, a (meth) acrylate copolymer, a block polymer, a thermoplastic resin, and a thermoplastic resin. Union Materials, thermosetting resins, water-soluble resins, and the like.

作為上述聚烯烴類,可列舉:聚乙烯、乙烯-乙酸乙烯酯共聚物及乙烯-丙烯酸酯共聚物等。作為上述(甲基)丙烯酸酯聚合物,可列舉:聚(甲基)丙烯酸甲酯、聚(甲基)丙烯酸乙酯及聚(甲基)丙烯酸丁酯等。作為上述嵌段聚合物,可列舉:聚苯乙烯、苯乙烯-丙烯酸酯共聚物、SB(styrene-butadiene,苯乙烯-丁二烯)型苯乙烯-丁二烯嵌段共聚物、及SBS(styrene-butadiene-styrene,苯乙烯-丁二烯-苯乙烯)型苯乙烯-丁二烯嵌段共聚物以及該等之氫化物等。作為上述熱塑性樹脂,可列舉:乙烯基聚合物及乙烯基共聚物等。作為上述熱硬化性樹脂,可列舉:環氧樹脂、酚系樹脂及三聚氰胺樹脂等。作為上述水溶性樹脂,可列舉:聚乙烯醇、聚丙烯酸、聚丙烯醯胺、聚乙烯基吡咯烷酮、聚環氧乙烷及甲基纖維素等。其中,較佳為水溶性樹脂,更佳為聚乙烯醇。Examples of the polyolefins include polyethylene, an ethylene-vinyl acetate copolymer, and an ethylene-acrylate copolymer. Examples of the (meth) acrylate polymer include poly(methyl) acrylate, poly(ethyl) acrylate, and poly(meth) acrylate. Examples of the block polymer include polystyrene, styrene-acrylate copolymer, styrene-butadiene (styrene-butadiene) type styrene-butadiene block copolymer, and SBS ( Styrene-butadiene-styrene, styrene-butadiene-styrene type styrene-butadiene block copolymer, and the like, and the like. Examples of the thermoplastic resin include a vinyl polymer and a vinyl copolymer. Examples of the thermosetting resin include an epoxy resin, a phenol resin, and a melamine resin. Examples of the water-soluble resin include polyvinyl alcohol, polyacrylic acid, polypropylene decylamine, polyvinylpyrrolidone, polyethylene oxide, and methyl cellulose. Among them, a water-soluble resin is preferred, and polyvinyl alcohol is more preferred.

作為於上述導電層之表面上配置絕緣物質之方法,可列舉化學方法、物理或機械方法等。作為上述化學方法,例如可列舉:界面聚合法、於粒子存在下之懸浮聚合法及乳化聚合法等。作為上述物理或機械方法,可列舉:噴霧乾燥、混成(hybridization)、靜電附著法、噴霧法、浸漬及真空蒸鍍之方法等。其中,較佳為經由化學鍵而將上述絕緣物質配置於上述導電層之表面之方法,原因在於絕緣物質不易脫離。Examples of the method of disposing the insulating material on the surface of the conductive layer include chemical methods, physical or mechanical methods, and the like. Examples of the chemical method include an interfacial polymerization method, a suspension polymerization method in the presence of particles, and an emulsion polymerization method. Examples of the physical or mechanical method include spray drying, hybridization, electrostatic adhesion, spray, immersion, and vacuum evaporation. Among them, a method of disposing the insulating material on the surface of the conductive layer via a chemical bond is preferred because the insulating material is not easily detached.

上述絕緣物質之平均直徑(平均粒徑)可根據導電性粒子 之粒徑及導電性粒子之用途等而適當選擇。上述絕緣物質之平均直徑(平均粒徑)較佳為0.005 μm以上,更佳為0.01 μm以上,且較佳為1 μm以下,更佳為0.5 μm以下。若絕緣物質之平均直徑為上述下限以上,則將導電性粒子分散於黏合劑樹脂中時,複數個導電性粒子之導電層彼此不易接觸。若絕緣性粒子之平均直徑為上述上限以下,則將電極間連接時,為排除電極與導電性粒子之間之絕緣物質,無需過度提高壓力,亦無需高溫加熱。The average diameter (average particle diameter) of the above insulating material may be based on conductive particles The particle size and the use of the conductive particles are appropriately selected. The average diameter (average particle diameter) of the insulating material is preferably 0.005 μm or more, more preferably 0.01 μm or more, and is preferably 1 μm or less, and more preferably 0.5 μm or less. When the average diameter of the insulating material is at least the above lower limit, when the conductive particles are dispersed in the binder resin, the conductive layers of the plurality of conductive particles are less likely to contact each other. When the average diameter of the insulating particles is not more than the above upper limit, when the electrodes are connected to each other, the insulating material between the electrodes and the conductive particles is excluded, and it is not necessary to excessively increase the pressure, and high-temperature heating is not required.

上述絕緣物質之「平均直徑(平均粒徑)」係表示數量平均直徑(數量平均粒徑)。絕緣物質之平均直徑可使用粒度分佈測定裝置等而求得。The "average diameter (average particle diameter)" of the above insulating material means a number average diameter (number average particle diameter). The average diameter of the insulating material can be determined by using a particle size distribution measuring device or the like.

(導電材料)(conductive material)

本發明之導電材料含有上述導電性粒子及黏合劑樹脂。本發明之導電性粒子較佳為添加於黏合劑樹脂中作為導電材料使用。本發明之導電材料較佳為各向異性導電材料。The conductive material of the present invention contains the above-mentioned conductive particles and a binder resin. The conductive particles of the present invention are preferably used as a conductive material in a binder resin. The conductive material of the present invention is preferably an anisotropic conductive material.

上述黏合劑樹脂並無特別限定。作為上述黏合劑樹脂,可使用公知之絕緣性樹脂。上述黏合劑樹脂例如可列舉:乙烯系樹脂、熱塑性樹脂、硬化性樹脂、熱塑性嵌段共聚物及彈性體等。上述黏合劑樹脂可僅使用1種,亦可併用2種以上。The above binder resin is not particularly limited. As the above binder resin, a known insulating resin can be used. Examples of the binder resin include an ethylene resin, a thermoplastic resin, a curable resin, a thermoplastic block copolymer, and an elastomer. The binder resin may be used alone or in combination of two or more.

作為上述乙烯系樹脂,例如可列舉:乙酸乙烯酯樹脂、丙烯酸系樹脂及苯乙烯樹脂等。作為上述熱塑性樹脂,例如可列舉:聚烯烴樹脂、乙烯-乙酸乙烯酯共聚物及聚醯胺樹脂等。作為上述硬化性樹脂,例如可列舉:環氧樹 脂、胺基甲酸酯樹脂、聚醯亞胺樹脂及不飽和聚酯樹脂等。再者,上述硬化性樹脂可為常溫硬化型樹脂、熱硬化型樹脂、光硬化型樹脂或濕氣硬化型樹脂。上述硬化性樹脂亦可與硬化劑併用。作為上述熱塑性嵌段共聚物,例如可列舉:苯乙烯-丁二烯-苯乙烯嵌段共聚物、苯乙烯-異戊二烯-苯乙烯嵌段共聚物、苯乙烯-丁二烯-苯乙烯嵌段共聚物之氫化物、及苯乙烯-異戊二烯-苯乙烯嵌段共聚物之氫化物等。作為上述彈性體,例如可列舉:苯乙烯-丁二烯共聚合橡膠、及丙烯腈-苯乙烯嵌段共聚合橡膠等。Examples of the vinyl resin include a vinyl acetate resin, an acrylic resin, and a styrene resin. Examples of the thermoplastic resin include a polyolefin resin, an ethylene-vinyl acetate copolymer, and a polyamide resin. As the curable resin, for example, an epoxy tree can be cited. A grease, a urethane resin, a polyimide resin, an unsaturated polyester resin, and the like. Further, the curable resin may be a room temperature curing resin, a thermosetting resin, a photocurable resin, or a moisture curing resin. The curable resin may be used in combination with a curing agent. Examples of the above thermoplastic block copolymer include a styrene-butadiene-styrene block copolymer, a styrene-isoprene-styrene block copolymer, and a styrene-butadiene-styrene. a hydride of a block copolymer, a hydride of a styrene-isoprene-styrene block copolymer, and the like. Examples of the elastomer include a styrene-butadiene copolymer rubber and an acrylonitrile-styrene block copolymer rubber.

上述導電材料除上述導電性粒子及上述黏合劑樹脂以外,例如亦可含有:填充劑、增量劑、軟化劑、塑化劑、聚合觸媒、硬化觸媒、著色劑、抗氧化劑、熱穩定劑、光穩定劑、紫外線吸收劑、潤滑劑、抗靜電劑及阻燃劑等各種添加劑。The conductive material may contain, in addition to the conductive particles and the binder resin, a filler, a bulking agent, a softener, a plasticizer, a polymerization catalyst, a curing catalyst, a colorant, an antioxidant, and a heat stabilization. Various additives such as agents, light stabilizers, ultraviolet absorbers, lubricants, antistatic agents and flame retardants.

作為使上述導電性粒子分散於上述黏合劑樹脂中之方法,可使用先前公知之分散方法,並無特別限定。作為使上述導電性粒子分散於上述黏合劑樹脂中之方法,例如可列舉以下等方法:於上述黏合劑樹脂中添加上述導電性粒子後,利用行星式混合機等混練而使之分散;使用均質機等使上述導電性粒子均勻地分散於水或有機溶劑中後,添加至上述黏合劑樹脂中,並利用行星式混合機等混練而使之分散;以及利用水或有機溶劑等稀釋上述黏合劑樹脂後,添加上述導電性粒子,並利用行星式混合機等混練而使之分散。As a method of dispersing the above-mentioned conductive particles in the above-mentioned binder resin, a conventionally known dispersion method can be used, and it is not particularly limited. The method of dispersing the above-mentioned conductive particles in the above-mentioned binder resin is, for example, a method in which the conductive particles are added to the binder resin, and then dispersed by a planetary mixer or the like, and homogenized. After the conductive particles are uniformly dispersed in water or an organic solvent, the conductive particles are added to the binder resin, and are dispersed by a planetary mixer or the like, and the binder is diluted with water or an organic solvent. After the resin, the above-mentioned conductive particles are added and kneaded by a planetary mixer or the like to be dispersed.

本發明之導電材料可以導電膏及導電膜等形態而使用。於將本發明之導電材料製成導電膜等膜狀之接著劑而使用之情形時,亦可於該含有導電性粒子的膜狀之接著劑上積層不含導電性粒子的膜狀之接著劑。上述導電膏較佳為各向異性導電膏。上述導電膜較佳為各向異性導電膜。The conductive material of the present invention can be used in the form of a conductive paste or a conductive film. When the conductive material of the present invention is used as a film-like adhesive such as a conductive film, a film-like adhesive containing no conductive particles may be laminated on the film-form adhesive containing conductive particles. . The above conductive paste is preferably an anisotropic conductive paste. The above conductive film is preferably an anisotropic conductive film.

於上述導電材料100重量%中,上述黏合劑樹脂之含量較佳為10重量%以上,更佳為30重量%以上,進而較佳為50重量%以上,尤佳為70重量%以上,且較佳為99.99重量%以下,更佳為99.9重量%以下。若上述黏合劑樹脂之含量為上述下限以上及上述上限以下,則可於電極間高效率地配置導電性粒子,且藉由導電材料而連接之連接對象構件之連接可靠性進一步提高。The content of the binder resin is preferably 10% by weight or more, more preferably 30% by weight or more, further preferably 50% by weight or more, and particularly preferably 70% by weight or more, based on 100% by weight of the conductive material. Preferably, it is 99.99% by weight or less, more preferably 99.9% by weight or less. When the content of the binder resin is not less than the above lower limit and not more than the above upper limit, the conductive particles can be efficiently disposed between the electrodes, and the connection reliability of the member to be joined connected by the conductive material can be further improved.

於上述導電材料100重量%中,上述導電性粒子之含量較佳為0.01重量%以上,更佳為0.1重量%以上,且較佳為40重量%以下,更佳為20重量%以下,進而較佳為10重量%以下。若上述導電性粒子之含量為上述下限以上及上述上限以下,則電極間之導通可靠性進一步提高。The content of the conductive particles is preferably 0.01% by weight or more, more preferably 0.1% by weight or more, and preferably 40% by weight or less, more preferably 20% by weight or less, based on 100% by weight of the conductive material. Preferably it is 10% by weight or less. When the content of the conductive particles is not less than the above lower limit and not more than the above upper limit, the conduction reliability between the electrodes is further improved.

(連接構造體)(connection structure)

藉由使用本發明之導電性粒子,或者使用含有該導電性粒子及黏合劑樹脂之導電材料將連接對象構件連接,可獲得連接構造體。The connection structure can be obtained by using the conductive particles of the present invention or by connecting the connection member using a conductive material containing the conductive particles and the binder resin.

上述連接構造體較佳為包含第1連接對象構件、第2連接對象構件及連接第1、第2連接對象構件之連接部,且該連接部係藉由本發明之導電性粒子而形成,或者藉由含有該 導電性粒子及黏合劑樹脂之導電材料而形成。於使用導電性粒子之情形時,連接部本身為導電性粒子。即,第1、第2連接對象構件係由導電性粒子連接。用於獲得上述連接構造體之上述導電材料較佳為各向異性導電材料。Preferably, the connection structure includes a first connection target member, a second connection target member, and a connection portion that connects the first and second connection target members, and the connection portion is formed by the conductive particles of the present invention, or Contained by The conductive particles and the conductive material of the binder resin are formed. In the case of using conductive particles, the connecting portion itself is a conductive particle. In other words, the first and second connection target members are connected by conductive particles. The above conductive material for obtaining the above-mentioned connection structure is preferably an anisotropic conductive material.

圖4係以模式方式且以前視剖面圖表示使用本發明之第1實施形態之導電性粒子的連接構造體。Fig. 4 is a view showing a connection structure in which the conductive particles according to the first embodiment of the present invention are used in a schematic manner and in a front cross-sectional view.

圖4所示之連接構造體51包含第1連接對象構件52、第2連接對象構件53及連接第1、第2連接對象構件52、53之連接部54。連接部54係藉由使含有導電性粒子1之導電材料硬化而形成。再者,於圖4中,為方便圖示而以簡圖表示導電性粒子1。The connection structure 51 shown in FIG. 4 includes the first connection object member 52, the second connection object member 53, and the connection portion 54 that connects the first and second connection object members 52 and 53. The connecting portion 54 is formed by curing the conductive material containing the conductive particles 1. In addition, in FIG. 4, the electroconductive particle 1 is shown in a schematic diagram for convenience of illustration.

第1連接對象構件52於上面52a(表面)具有複數個電極52b。第2連接對象構件53於下面53a(表面)具有複數個電極53b。電極52b與電極53b係藉由1個或複數個導電性粒子1而電性連接。因此,第1、第2連接對象構件52、53藉由導電性粒子1而電性連接。The first connection object member 52 has a plurality of electrodes 52b on the upper surface 52a (surface). The second connection object member 53 has a plurality of electrodes 53b on the lower surface 53a (surface). The electrode 52b and the electrode 53b are electrically connected by one or a plurality of conductive particles 1. Therefore, the first and second connection target members 52 and 53 are electrically connected by the conductive particles 1 .

上述連接構造體之製造方法並無特別限定。作為連接構造體之製造方法之一例,可列舉:於第1連接對象構件與第2連接對象構件之間配置上述導電材料而獲得積層體後,對該積層體加熱及加壓之方法等。上述加壓之壓力為9.8×104 ~4.9×106 Pa左右。上述加熱之溫度為120~220℃左右。The method for producing the above-described connection structure is not particularly limited. An example of the method of manufacturing the connection structure is a method in which the conductive material is placed between the first connection target member and the second connection target member to obtain a laminate, and the laminate is heated and pressurized. The pressure of the above pressurization is about 9.8 × 10 4 to 4.9 × 10 6 Pa. The heating temperature is about 120 to 220 °C.

作為上述連接對象構件,具體而言可列舉:半導體晶片、電容器及二極體等電子零件,以及印刷基板、可撓性 印刷基板及玻璃基板等電路基板等。上述導電材料較佳為用以連接電子零件之導電材料。上述導電材料較佳為膏狀之導電膏,以膏狀之狀態塗敷於連接對象構件上。Specific examples of the connection target member include electronic components such as a semiconductor wafer, a capacitor, and a diode, and a printed circuit board and flexibility. A circuit board such as a printed circuit board or a glass substrate. The conductive material is preferably a conductive material for connecting electronic components. The conductive material is preferably a paste-like conductive paste applied to the member to be joined in a paste state.

作為設置於上述連接對象構件上之電極,可列舉:金電極、鎳電極、錫電極、鋁電極、銅電極、鉬電極及鎢電極等金屬電極。於上述連接對象構件為可撓性印刷基板之情形時,上述電極較佳為金電極、鎳電極、錫電極或銅電極。於上述連接對象構件為玻璃基板之情形時,上述電極較佳為鋁電極、銅電極、鉬電極或鎢電極。再者,於上述電極為鋁電極之情形時,可為僅由鋁形成之電極,亦可為於金屬氧化物層之表面積層有鋁層之電極。作為上述金屬氧化物層之材料,可列舉:摻雜有3價之金屬元素的氧化銦及摻雜有3價之金屬元素的氧化鋅等。作為上述3價之金屬元素,可列舉:Sn、Al及Ga等。Examples of the electrode provided on the connection target member include metal electrodes such as a gold electrode, a nickel electrode, a tin electrode, an aluminum electrode, a copper electrode, a molybdenum electrode, and a tungsten electrode. In the case where the connection target member is a flexible printed circuit board, the electrode is preferably a gold electrode, a nickel electrode, a tin electrode or a copper electrode. In the case where the connection target member is a glass substrate, the electrode is preferably an aluminum electrode, a copper electrode, a molybdenum electrode or a tungsten electrode. Further, in the case where the electrode is an aluminum electrode, it may be an electrode formed only of aluminum, or an electrode having an aluminum layer on a surface layer of the metal oxide layer. Examples of the material of the metal oxide layer include indium oxide doped with a trivalent metal element and zinc oxide doped with a trivalent metal element. Examples of the trivalent metal element include Sn, Al, Ga, and the like.

以下,列舉實施例及比較例具體地說明本發明。本發明並非僅限定於以下實施例。Hereinafter, the present invention will be specifically described by way of examples and comparative examples. The invention is not limited to the following examples.

(實施例1)(Example 1)

準備粒徑為3.0 μm之二乙烯苯共聚物樹脂粒子(積水化學工業公司製造之「Micropearl SP-203」)。A divinylbenzene copolymer resin particle ("Micropearl SP-203" manufactured by Sekisui Chemical Co., Ltd.) having a particle diameter of 3.0 μm was prepared.

使用超音波分散器使上述樹脂粒子10重量份分散於含有鈀觸媒溶液5重量%之鹼溶液100重量份中後,過濾溶液,藉此取出樹脂粒子。繼而,將樹脂粒子添加於二甲胺硼烷1重量%溶液100重量份中,使樹脂粒子之表面活化。將表面經活化之樹脂粒子充分水洗後,添加於蒸餾水500重量 份中使其分散,藉此獲得懸浮液。10 parts by weight of the above resin particles were dispersed in 100 parts by weight of an alkali solution containing 5 wt% of a palladium catalyst solution using an ultrasonic disperser, and then the solution was filtered to take out the resin particles. Then, the resin particles were added to 100 parts by weight of a 1% by weight solution of dimethylamine borane to activate the surface of the resin particles. After the surface-activated resin particles are sufficiently washed with water, 500 weight of distilled water is added. The fraction was dispersed to thereby obtain a suspension.

又,準備含有硫酸鎳0.23 mol/L、二甲胺硼烷0.92 mol/L、檸檬酸鈉0.5 mol/L及鎢酸鈉0.01 mol/L之鍍鎳液(pH值8.5)。Further, a nickel plating solution (pH 8.5) containing 0.23 mol/L of nickel sulfate, 0.92 mol/L of dimethylamine borane, 0.5 mol/L of sodium citrate, and 0.01 mol/L of sodium tungstate was prepared.

一面於60℃下攪拌所獲得之懸浮液,一面將上述鍍鎳液緩緩滴加至懸浮液中,進行非電解鍍鎳。其後,藉由過濾懸浮液而將粒子取出,進行水洗、乾燥,藉此獲得於樹脂粒子之表面配置有鎳-硼-鎢導電層(厚度0.1 μm)之導電性粒子。While the obtained suspension was stirred at 60 ° C, the nickel plating solution was gradually added dropwise to the suspension to carry out electroless nickel plating. Thereafter, the particles were taken out by filtration of the suspension, washed with water, and dried to obtain conductive particles in which a nickel-boron-tungsten conductive layer (thickness: 0.1 μm) was disposed on the surface of the resin particles.

(實施例2)(Example 2)

除將鎢酸鈉濃度變更為0.12 mol/L以外,以與實施例1同樣之方式獲得於樹脂粒子之表面配置有鎳-硼-鎢導電層(厚度0.1 μm)之導電性粒子。Conductive particles in which a nickel-boron-tungsten conductive layer (thickness: 0.1 μm) was disposed on the surface of the resin particles were obtained in the same manner as in Example 1 except that the concentration of sodium tungstate was changed to 0.12 mol/L.

(實施例3)(Example 3)

除將鎢酸鈉濃度變更為0.23 mol/L以外,以與實施例1同樣之方式獲得於樹脂粒子之表面配置有鎳-硼-鎢導電層(厚度0.1 μm)之導電性粒子。Conductive particles in which a nickel-boron-tungsten conductive layer (thickness: 0.1 μm) was disposed on the surface of the resin particles were obtained in the same manner as in Example 1 except that the concentration of sodium tungstate was changed to 0.23 mol/L.

(實施例4)(Example 4)

除將鎢酸鈉濃度變更為0.35 mol/L以外,以與實施例1同樣之方式獲得於樹脂粒子之表面配置有鎳-硼-鎢導電層(厚度0.1 μm)之導電性粒子。Conductive particles in which a nickel-boron-tungsten conductive layer (thickness: 0.1 μm) was disposed on the surface of the resin particles were obtained in the same manner as in Example 1 except that the concentration of sodium tungstate was changed to 0.35 mol/L.

(實施例5)(Example 5)

除將二甲胺硼烷濃度變更為2.76 mol/L,以及將鎢酸鈉濃度變更為0.35 mol/L以外,以與實施例1同樣之方式獲得 於樹脂粒子之表面配置有鎳-硼-鎢導電層(厚度0.1 μm)之導電性粒子。Obtained in the same manner as in Example 1 except that the concentration of dimethylamine borane was changed to 2.76 mol/L and the concentration of sodium tungstate was changed to 0.35 mol/L. Conductive particles of a nickel-boron-tungsten conductive layer (thickness: 0.1 μm) were disposed on the surface of the resin particles.

(實施例6)(Example 6)

(1)鈀附著步驟(1) Palladium attachment step

準備粒徑為5.0 μm之二乙烯苯樹脂粒子(積水化學工業公司製造之「Micropearl SP-205」)。將該樹脂粒子蝕刻、水洗。其次,將樹脂粒子添加於含有鈀觸媒8重量%之鈀觸媒化溶液100 mL中,並進行攪拌。其後,進行過濾、洗淨。將樹脂粒子添加於pH值為6之0.5重量%二甲胺硼烷溶液中,獲得附著有鈀之樹脂粒子。Divinyl benzene resin particles ("Micropearl SP-205" manufactured by Sekisui Chemical Co., Ltd.) having a particle diameter of 5.0 μm were prepared. The resin particles were etched and washed with water. Next, the resin particles were added to 100 mL of a palladium catalyst solution containing 8 wt% of a palladium catalyst, and stirred. Thereafter, it was filtered and washed. The resin particles were added to a 0.5 wt% dimethylamine borane solution having a pH of 6, to obtain resin particles to which palladium adhered.

(2)芯物質附著步驟(2) Core substance attachment step

於離子交換水300 mL中將附著有鈀之樹脂粒子攪拌3分鐘使其分散,獲得分散液。其次,將金屬鎳粒子漿料(平均粒徑100 nm)1 g歷時3分鐘添加於上述分散液中,獲得附著有芯物質之樹脂粒子。The resin particles to which palladium adhered were stirred for 3 minutes in 300 mL of ion-exchanged water to obtain a dispersion. Next, 1 g of a metal nickel particle slurry (average particle diameter: 100 nm) was added to the above dispersion liquid for 3 minutes to obtain resin particles to which a core substance adhered.

(3)非電解鍍鎳步驟(3) Electroless nickel plating step

以與實施例1同樣之方式獲得於樹脂粒子之表面配置有鎳-硼-鎢導電層(厚度0.1 μm)之導電性粒子。In the same manner as in Example 1, conductive particles in which a nickel-boron-tungsten conductive layer (thickness: 0.1 μm) was disposed on the surface of the resin particles were obtained.

(實施例7)(Example 7)

除將鎢酸鈉濃度變更為0.35 mol/L以外,以與實施例6同樣之方式獲得於樹脂粒子之表面配置有鎳-硼-鎢導電層(厚度0.1 μm)之導電性粒子。Conductive particles in which a nickel-boron-tungsten conductive layer (thickness: 0.1 μm) was disposed on the surface of the resin particles were obtained in the same manner as in Example 6 except that the concentration of sodium tungstate was changed to 0.35 mol/L.

(實施例8)(Example 8)

(1)絕緣性粒子之製作(1) Production of insulating particles

於安裝有4口可分離式蓋、攪拌葉片、三通活栓、冷卻管及溫度探針之1000 mL之可分離式燒瓶中,將含有甲基丙烯酸甲酯100 mmol、N,N,N-三甲基-N-2-甲基丙烯醯氧基乙基氯化銨1 mmol及2,2'-偶氮雙(2-脒基丙烷)二鹽酸鹽1 mmol的單體組合物以固形物成分率為5重量%之方式稱取於離子交換水中後,以200 rpm進行攪拌,並於氮氣環境下以70℃進行24小時聚合。反應結束後進行冷凍乾燥,獲得表面具有銨基、平均粒徑為220 nm且CV值為10%之絕緣性粒子。In a 1000 mL separable flask equipped with four separable caps, stirring blades, three-way stopcocks, cooling tubes and temperature probes, it will contain methyl methacrylate 100 mmol, N, N, N-three Methyl-N-2-methylpropenyloxyethylammonium chloride 1 mmol and 2,2'-azobis(2-amidinopropane) dihydrochloride 1 mmol of monomer composition as solid matter After the component ratio was 5% by weight, it was weighed in ion-exchanged water, stirred at 200 rpm, and polymerized at 70 ° C for 24 hours under a nitrogen atmosphere. After completion of the reaction, lyophilization was carried out to obtain insulating particles having an ammonium group on the surface, an average particle diameter of 220 nm, and a CV value of 10%.

於超音波照射下使絕緣性粒子分散於離子交換水中,獲得絕緣性粒子之10重量%水分散液。The insulating particles were dispersed in ion-exchanged water under ultrasonic irradiation to obtain a 10% by weight aqueous dispersion of the insulating particles.

使實施例6所獲得之導電性粒子10 g分散於離子交換水500 mL中,添加絕緣性粒子之水分散液4 g,於室溫下攪拌6小時。利用3 μm之篩網過濾器過濾後,進而利用甲醇洗淨,並進行乾燥,獲得附著有絕緣性粒子之導電性粒子。10 g of the conductive particles obtained in Example 6 was dispersed in 500 mL of ion-exchanged water, 4 g of an aqueous dispersion of insulating particles was added, and the mixture was stirred at room temperature for 6 hours. After filtering with a 3 μm mesh filter, it was washed with methanol and dried to obtain conductive particles to which insulating particles were attached.

利用掃描式電子顯微鏡(SEM)進行觀察,可見於導電性粒子之表面僅形成有1層絕緣性粒子之被覆層。藉由圖像分析算出相對於自導電性粒子之中心起2.5 μm之面積的絕緣性粒子之被覆面積(即絕緣性粒子之粒徑之投影面積),結果被覆率為30%。Observation by a scanning electron microscope (SEM) revealed that only one layer of insulating particles was formed on the surface of the conductive particles. The coverage area of the insulating particles (i.e., the projected area of the particle diameter of the insulating particles) with respect to the area of 2.5 μm from the center of the conductive particles was calculated by image analysis, and the coverage was 30%.

(實施例9)(Example 9)

除將鎢酸鈉濃度變更為0.46 mol/L以外,以與實施例1同樣之方式獲得於樹脂粒子之表面配置有鎳-硼-鎢導電層(厚 度0.1 μm)之導電性粒子。A nickel-boron-tungsten conductive layer (thickness) was formed on the surface of the resin particles in the same manner as in Example 1 except that the sodium tungstate concentration was changed to 0.46 mol/L. Conductive particles of 0.1 μm).

(實施例10)(Embodiment 10)

除將二甲胺硼烷濃度變更為4.60 mol/L,以及將鎢酸鈉濃度變更為0.23 mol/L以外,以與實施例1同樣之方式獲得於樹脂粒子之表面配置有鎳-硼-鎢導電層(厚度0.1 μm)之導電性粒子。In the same manner as in Example 1, except that the concentration of dimethylamine borane was changed to 4.60 mol/L, and the concentration of sodium tungstate was changed to 0.23 mol/L, nickel-boron-tungsten was disposed on the surface of the resin particles in the same manner as in Example 1. Conductive layer (thickness 0.1 μm) of conductive particles.

(比較例1)(Comparative Example 1)

除將鍍鎳液中之二甲胺硼烷0.92 mol/L變更為次亞磷酸鈉0.5 mol/L以外,以與實施例1同樣之方式獲得於樹脂粒子之表面配置有含有鎳、鎢及磷之導電層(厚度0.1 μm)之導電性粒子。導電層之整體100重量%中磷之含量為8.9重量%。In the same manner as in Example 1, except that 0.92 mol/L of dimethylamine borane in the nickel plating solution was changed to 0.5 mol/L of sodium hypophosphite, nickel, tungsten and phosphorus were disposed on the surface of the resin particles. Conductive particles (0.1 μm thick) of conductive particles. The content of phosphorus in 100% by weight of the entire conductive layer was 8.9% by weight.

(比較例2)(Comparative Example 2)

除未使用鍍鎳液中之鎢酸鈉0.01 mol/L以外,以與實施例1同樣之方式獲得於樹脂粒子之表面配置有含有鎳及硼之導電層(厚度0.1 μm)之導電性粒子。Conductive particles having a conductive layer (thickness: 0.1 μm) containing nickel and boron were disposed on the surface of the resin particles in the same manner as in Example 1 except that sodium tungstate was not used in the nickel plating solution of 0.01 mol/L.

(實施例11)(Example 11)

準備粒徑為3.0 μm之二乙烯苯共聚物樹脂粒子(積水化學工業公司製造之「Micropearl SP-203」)。A divinylbenzene copolymer resin particle ("Micropearl SP-203" manufactured by Sekisui Chemical Co., Ltd.) having a particle diameter of 3.0 μm was prepared.

使用超音波分散器使上述樹脂粒子10重量份分散於含有鈀觸媒溶液5重量%之鹼溶液100重量份中後,過濾溶液,藉此取出樹脂粒子。繼而,將樹脂粒子添加於二甲胺硼烷1重量%溶液100重量份中,使樹脂粒子之表面活化。將表面經活化之樹脂粒子充分水洗後,添加於蒸餾水500重量 份中使其分散,藉此獲得懸浮液。10 parts by weight of the above resin particles were dispersed in 100 parts by weight of an alkali solution containing 5 wt% of a palladium catalyst solution using an ultrasonic disperser, and then the solution was filtered to take out the resin particles. Then, the resin particles were added to 100 parts by weight of a 1% by weight solution of dimethylamine borane to activate the surface of the resin particles. After the surface-activated resin particles are sufficiently washed with water, 500 weight of distilled water is added. The fraction was dispersed to thereby obtain a suspension.

又,準備含有硫酸鎳0.23 mol/L、二甲胺硼烷0.92 mol/L、檸檬酸鈉0.5 mol/L及鉬酸鈉0.01 mol/L之鍍鎳液(pH值8.5)。Further, a nickel plating solution (pH 8.5) containing 0.23 mol/L of nickel sulfate, 0.92 mol/L of dimethylamine borane, 0.5 mol/L of sodium citrate, and 0.01 mol/L of sodium molybdate was prepared.

一面於60℃下攪拌所獲得之懸浮液,一面將上述鍍鎳液緩緩滴加至懸浮液中,進行非電解鍍鎳。其後,藉由過濾懸浮液而取出粒子,進行水洗、乾燥,藉此獲得於樹脂粒子之表面配置有鎳-硼-鉬導電層(厚度0.1 μm)之導電性粒子。While the obtained suspension was stirred at 60 ° C, the nickel plating solution was gradually added dropwise to the suspension to carry out electroless nickel plating. Thereafter, the particles were taken out by filtration of the suspension, washed with water, and dried to obtain conductive particles in which a nickel-boron-molybdenum conductive layer (thickness: 0.1 μm) was disposed on the surface of the resin particles.

(實施例12)(Embodiment 12)

除將鉬酸鈉濃度變更為0.12 mol/L以外,以與實施例11同樣之方式獲得於樹脂粒子之表面配置有鎳-硼-鉬導電層(厚度0.1 μm)之導電性粒子。Conductive particles in which a nickel-boron-molybdenum conductive layer (thickness: 0.1 μm) was disposed on the surface of the resin particles were obtained in the same manner as in Example 11 except that the sodium molybdate concentration was changed to 0.12 mol/L.

(實施例13)(Example 13)

除將鉬酸鈉濃度變更為0.23 mol/L以外,以與實施例11同樣之方式獲得於樹脂粒子之表面配置有鎳-硼-鉬導電層(厚度0.1 μm)之導電性粒子。Conductive particles in which a nickel-boron-molybdenum conductive layer (thickness: 0.1 μm) was disposed on the surface of the resin particles were obtained in the same manner as in Example 11 except that the sodium molybdate concentration was changed to 0.23 mol/L.

(實施例14)(Example 14)

除將鉬酸鈉濃度變更為0.35 mol/L以外,以與實施例11同樣之方式獲得於樹脂粒子之表面配置有鎳-硼-鉬導電層(厚度0.1 μm)之導電性粒子。Conductive particles in which a nickel-boron-molybdenum conductive layer (thickness: 0.1 μm) was disposed on the surface of the resin particles were obtained in the same manner as in Example 11 except that the sodium molybdate concentration was changed to 0.35 mol/L.

(實施例15)(Example 15)

除將二甲胺硼烷濃度變更為2.76 mol/L,以及將鉬酸鈉濃度變更為0.35 mol/L以外,以與實施例11同樣之方式獲 得於樹脂粒子之表面配置有鎳-硼-鉬導電層(厚度0.1 μm)之導電性粒子。The same procedure as in Example 11 was carried out except that the concentration of dimethylamine borane was changed to 2.76 mol/L, and the concentration of sodium molybdate was changed to 0.35 mol/L. Conductive particles of a nickel-boron-molybdenum conductive layer (thickness: 0.1 μm) were disposed on the surface of the resin particles.

(實施例16)(Embodiment 16)

(1)鈀附著步驟(1) Palladium attachment step

準備粒徑為5.0 μm之二乙烯苯樹脂粒子(積水化學工業公司製造之「Micropearl SP-205」)。將該樹脂粒子蝕刻、水洗。其次,將樹脂粒子添加於含有鈀觸媒8重量%之鈀觸媒化溶液100 mL中,並進行攪拌。其後,進行過濾、洗淨。將樹脂粒子添加於pH值為6之0.5重量%二甲胺硼烷溶液中,獲得附著有鈀之樹脂粒子。Divinyl benzene resin particles ("Micropearl SP-205" manufactured by Sekisui Chemical Co., Ltd.) having a particle diameter of 5.0 μm were prepared. The resin particles were etched and washed with water. Next, the resin particles were added to 100 mL of a palladium catalyst solution containing 8 wt% of a palladium catalyst, and stirred. Thereafter, it was filtered and washed. The resin particles were added to a 0.5 wt% dimethylamine borane solution having a pH of 6, to obtain resin particles to which palladium adhered.

(2)芯物質附著步驟(2) Core substance attachment step

於離子交換水300 mL中將附著有鈀之樹脂粒子攪拌3分鐘使其分散,獲得分散液。其次,將金屬鎳粒子漿料(平均粒徑100 nm)1 g歷時3分鐘添加於上述分散液中,獲得附著有芯物質之樹脂粒子。The resin particles to which palladium adhered were stirred for 3 minutes in 300 mL of ion-exchanged water to obtain a dispersion. Next, 1 g of a metal nickel particle slurry (average particle diameter: 100 nm) was added to the above dispersion liquid for 3 minutes to obtain resin particles to which a core substance adhered.

(3)非電解鍍鎳步驟(3) Electroless nickel plating step

以與實施例11同樣之方式獲得於樹脂粒子之表面配置有鎳-硼-鉬導電層(厚度0.1 μm)之導電性粒子。Conductive particles in which a nickel-boron-molybdenum conductive layer (thickness: 0.1 μm) was disposed on the surface of the resin particles were obtained in the same manner as in Example 11.

(實施例17)(Example 17)

除將鉬酸鈉濃度變更為0.35 mol/L以外,以與實施例16同樣之方式獲得於樹脂粒子之表面配置有鎳-硼-鉬導電層(厚度0.1 μm)之導電性粒子。Conductive particles in which a nickel-boron-molybdenum conductive layer (thickness: 0.1 μm) was disposed on the surface of the resin particles were obtained in the same manner as in Example 16 except that the sodium molybdate concentration was changed to 0.35 mol/L.

(實施例18)(Embodiment 18)

(1)絕緣性粒子之製作(1) Production of insulating particles

於安裝有4口可分離式蓋、攪拌葉片、三通活栓、冷卻管及溫度探針之1000 mL之可分離式燒瓶中,將含有甲基丙烯酸甲酯100 mmol、N,N,N-三甲基-N-2-甲基丙烯醯氧基乙基氯化銨1 mmol及2,2'-偶氮雙(2-脒基丙烷)二鹽酸鹽1 mmol的單體組合物以固形物成分率為5重量%之方式稱取於離子交換水中後,以200 rpm進行攪拌,並於氮氣環境下以70℃進行24小時聚合。反應結束後進行冷凍乾燥,獲得表面具有銨基、平均粒徑為220 nm且CV值為10%之絕緣性粒子。In a 1000 mL separable flask equipped with four separable caps, stirring blades, three-way stopcocks, cooling tubes and temperature probes, it will contain methyl methacrylate 100 mmol, N, N, N-three Methyl-N-2-methylpropenyloxyethylammonium chloride 1 mmol and 2,2'-azobis(2-amidinopropane) dihydrochloride 1 mmol of monomer composition as solid matter After the component ratio was 5% by weight, it was weighed in ion-exchanged water, stirred at 200 rpm, and polymerized at 70 ° C for 24 hours under a nitrogen atmosphere. After completion of the reaction, lyophilization was carried out to obtain insulating particles having an ammonium group on the surface, an average particle diameter of 220 nm, and a CV value of 10%.

於超音波照射下使絕緣性粒子分散於離子交換水中,獲得絕緣性粒子之10重量%水分散液。The insulating particles were dispersed in ion-exchanged water under ultrasonic irradiation to obtain a 10% by weight aqueous dispersion of the insulating particles.

使實施例16所獲得之導電性粒子10 g分散於離子交換水500 mL中,添加絕緣性粒子之水分散液4 g,於室溫下攪拌6小時。利用3 μm之篩網過濾器過濾後,進而利用甲醇洗淨,並進行乾燥,獲得附著有絕緣性粒子之導電性粒子。10 g of the conductive particles obtained in Example 16 was dispersed in 500 mL of ion-exchanged water, 4 g of an aqueous dispersion of insulating particles was added, and the mixture was stirred at room temperature for 6 hours. After filtering with a 3 μm mesh filter, it was washed with methanol and dried to obtain conductive particles to which insulating particles were attached.

利用掃描式電子顯微鏡(SEM)進行觀察,可見於導電性粒子之表面僅形成有1層絕緣性粒子之被覆層。藉由圖像分析算出相對於距導電性粒子之中心起2.5 μm之面積的絕緣性粒子之被覆面積(即絕緣性粒子之粒徑之投影面積),結果被覆率為30%。Observation by a scanning electron microscope (SEM) revealed that only one layer of insulating particles was formed on the surface of the conductive particles. The coverage area of the insulating particles (i.e., the projected area of the particle diameter of the insulating particles) with respect to the area of 2.5 μm from the center of the conductive particles was calculated by image analysis, and the coverage was 30%.

(實施例19)(Embodiment 19)

除將鉬酸鈉濃度變更為0.46 mol/L以外,以與實施例11同樣之方式獲得於樹脂粒子之表面配置有鎳-硼-鉬導電層 (厚度0.1 μm)之導電性粒子。A nickel-boron-molybdenum conductive layer was disposed on the surface of the resin particles in the same manner as in Example 11 except that the sodium molybdate concentration was changed to 0.46 mol/L. Conductive particles (thickness 0.1 μm).

(實施例20)(Embodiment 20)

除將二甲胺硼烷濃度變更為4.60 mol/L,以及將鉬酸鈉濃度變更為0.23 mol/L以外,以與實施例11同樣之方式獲得於樹脂粒子之表面配置有鎳-硼-鉬導電層(厚度0.1 μm)之導電性粒子。In the same manner as in Example 11, except that the concentration of dimethylamine borane was changed to 4.60 mol/L, and the concentration of sodium molybdate was changed to 0.23 mol/L, nickel-boron-molybdenum was disposed on the surface of the resin particles in the same manner as in Example 11. Conductive layer (thickness 0.1 μm) of conductive particles.

(比較例3)(Comparative Example 3)

除將鍍鎳液中之二甲胺硼烷0.92 mol/L變更為次亞磷酸鈉0.5 mol/L以外,以與實施例11同樣之方式獲得於樹脂粒子之表面配置有含有鎳、鉬及磷之導電層(厚度0.1 μm)之導電性粒子。導電層之整體100重量%中磷之含量為9.5重量%。In the same manner as in Example 11, except that 0.92 mol/L of dimethylamine borane in the nickel plating solution was changed to 0.5 mol/L of sodium hypophosphite, nickel, molybdenum and phosphorus were disposed on the surface of the resin particles. Conductive particles (0.1 μm thick) of conductive particles. The content of phosphorus in 100% by weight of the entire conductive layer was 9.5% by weight.

(實施例1~20及比較例1~3之評價)(Evaluation of Examples 1 to 20 and Comparative Examples 1 to 3)

(1)導電性粒子之壓縮彈性模數(5%K值)(1) Compressive elastic modulus of conductive particles (5% K value)

使用微小壓縮試驗機(Fischer公司製造之「Fischerscope H-100」)測定所獲得之導電性粒子之壓縮彈性模數(5%K值)。The compression elastic modulus (5% K value) of the obtained conductive particles was measured using a micro compression tester ("Fischerscope H-100" manufactured by Fischer Co., Ltd.).

(2)導電層之裂縫產生試驗(2) Crack generation test of conductive layer

於台上放置導電性粒子。使用微小壓縮試驗機(Fischer公司製造之「Fischerscope H-100」),於壓縮速度0.33 mN/s及最大試驗荷重10 mN之條件下,以圓柱(直徑50 μm,金剛石製)作為壓縮構件,使該壓縮構件之平滑端面朝向導電性粒子降落。藉由平滑端面壓縮導電性粒子。進行壓縮直至導電性粒子之導電層產生裂縫為止。將導電層 產生裂縫之導電性粒子相對於壓縮方向上壓縮前導電性粒子之粒徑的上述壓縮位移示於下述表1、2中。上述壓縮位移之評價結果係將3個導電性粒子之測定值之平均值示於下述表1、2中。Conductive particles are placed on the stage. Using a micro compression tester (Fischerscope H-100 manufactured by Fischer), a cylinder (diameter 50 μm, made of diamond) was used as a compression member at a compression speed of 0.33 mN/s and a maximum test load of 10 mN. The smooth end surface of the compression member is lowered toward the conductive particles. The conductive particles are compressed by smooth end faces. The compression is performed until a crack occurs in the conductive layer of the conductive particles. Conductive layer The above-described compression displacement of the particle diameter of the conductive particles which generate cracks with respect to the conductive particles before compression in the compression direction is shown in Tables 1 and 2 below. As a result of the evaluation of the above-described compression displacement, the average value of the measured values of the three conductive particles is shown in Tables 1 and 2 below.

(3)導電層X之整體100重量%中鎳、硼、磷、鎢及鉬之含量(3) The content of nickel, boron, phosphorus, tungsten and molybdenum in 100% by weight of the entire conductive layer X

於60%硝酸5 mL與37%鹽酸10 mL之混合液中添加導電性粒子5 g,使導電層完全溶解而獲得溶液。使用所獲得之溶液,利用ICP-MS分析儀(日立製作所公司製造)分析鎳、硼、磷、鎢及鉬之含量。再者,實施例之導電性粒子之導電層不含磷。5 g of conductive particles were added to a mixture of 5 mL of 60% nitric acid and 10 mL of 37% hydrochloric acid to completely dissolve the conductive layer to obtain a solution. Using the obtained solution, the contents of nickel, boron, phosphorus, tungsten, and molybdenum were analyzed by an ICP-MS analyzer (manufactured by Hitachi, Ltd.). Further, the conductive layer of the conductive particles of the examples does not contain phosphorus.

(4)鍍敷狀態(4) Plating state

利用掃描型電子顯微鏡觀察50個所獲得之導電性粒子之鍍敷狀態。觀察有無鍍敷裂縫或鍍敷剝離等鍍敷不均。將確認到鍍敷不均之導電性粒子為4個以下之情形判定為「良好」,將確認到鍍敷不均之導電性粒子為5個以上之情形判定為「不佳」。The plating state of 50 obtained conductive particles was observed by a scanning electron microscope. Observe the presence or absence of uneven plating such as plating cracks or plating peeling. When it was confirmed that the number of the conductive particles having uneven plating was four or less, it was judged as "good", and it was judged that the number of the conductive particles having uneven plating was five or more.

(5)凝集狀態(5) Agglutination state

將雙酚A型環氧樹脂(三菱化學公司製造之「Epikote 1009」)10重量份、丙烯酸系橡膠(重量平均分子量約80萬)40重量份、甲基乙基酮200重量份、微膠囊型硬化劑(旭化成化學公司製造之「HX3941HP」)50重量份、矽烷偶合劑(Dow Corning Toray Silicone公司製造之「SH6040」)2重量份混合,以含量成為3重量%之方式添加導電性粒子並使其分散,獲得各向異性導電材料。10 parts by weight of bisphenol A type epoxy resin ("Epikote 1009" manufactured by Mitsubishi Chemical Corporation), 40 parts by weight of acrylic rubber (weight average molecular weight: about 800,000), 200 parts by weight of methyl ethyl ketone, and microcapsule type 50 parts by weight of a hardener ("HX3941HP" manufactured by Asahi Kasei Chemicals Co., Ltd.) and 2 parts by weight of a decane coupling agent ("SH6040" manufactured by Dow Corning Toray Silicone Co., Ltd.) were mixed, and conductive particles were added so as to have a content of 3% by weight. It is dispersed to obtain an anisotropic conductive material.

將所獲得之各向異性導電材料於25℃下保管72小時。保管後,評價各向異性導電材料中是否有凝集之導電性粒子沈澱。將無凝集之導電性粒子沈澱之情形判定為「良好」,將有凝集之導電性粒子沈澱之情形判定為「不佳」。The obtained anisotropic conductive material was stored at 25 ° C for 72 hours. After storage, it was evaluated whether or not agglomerated conductive particles precipitated in the anisotropic conductive material. The case where the non-aggregated conductive particles were precipitated was judged as "good", and the case where the aggregated conductive particles were precipitated was judged as "poor".

(6)連接電阻(6) Connection resistance

連接構造體之製作:將雙酚A型環氧樹脂(三菱化學公司製造之「Epikote 1009」)10重量份、丙烯酸系橡膠(重量平均分子量約80萬)40重量份、甲基乙基酮200重量份、微膠囊型硬化劑(旭化成化學公司製造之「HX3941HP」)50重量份、矽烷偶合劑(Dow Corning Toray Silicone公司製造之「SH6040」)2重量份混合,以含量成為3重量%之方式添加導電性粒子並使其分散,獲得樹脂組合物。Production of a connection structure: 10 parts by weight of bisphenol A type epoxy resin ("Epikote 1009" manufactured by Mitsubishi Chemical Corporation), 40 parts by weight of acrylic rubber (weight average molecular weight: about 800,000), and methyl ethyl ketone 200 50 parts by weight of a microcapsule-type hardener ("HX3941HP" manufactured by Asahi Kasei Chemicals Co., Ltd.) and 2 parts by weight of a decane coupling agent ("SH6040" manufactured by Dow Corning Toray Silicone Co., Ltd.) were mixed in a weight ratio of 3% by weight. The conductive particles were added and dispersed to obtain a resin composition.

將所獲得之樹脂組合物塗佈於單面經脫模處理且厚度為50 μm之PET(polyethylene terephthalate,聚對苯二甲酸乙二酯)膜上,以70℃之熱風乾燥5分鐘而製作各向異性導電膜。所獲得之各向異性導電膜之厚度為12 μm。The obtained resin composition was applied onto a PET (polyethylene terephthalate) film having a thickness of 50 μm which was subjected to release treatment on one side, and dried by hot air at 70 ° C for 5 minutes to prepare each. Anisotropic conductive film. The thickness of the anisotropic conductive film obtained was 12 μm.

將所獲得之各向異性導電膜切斷成5 mm×5 mm之大小。將切斷而成之各向異性導電膜貼附於一側包含具有電阻測定用之引導線的鋁電極(高度為0.2 μm,L/S=20 μm/20 μm)之玻璃基板(寬3 cm、長3 cm)的鋁電極側之大致中央。繼而,將包含相同之鋁電極之雙層可撓性印刷基板(寬2 cm、長1 cm)以電極彼此重疊之方式對準位置並貼合。以10 N、180℃及20秒之壓接條件對該玻璃基板與雙 層可撓性印刷基板之積層體進行熱壓接而獲得連接構造體。再者,係使用於聚醯亞胺膜上直接形成有鋁電極之雙層可撓性印刷基板。The obtained anisotropic conductive film was cut into a size of 5 mm × 5 mm. The cut anisotropic conductive film was attached to a glass substrate (having a height of 0.2 μm, L/S=20 μm/20 μm) including a guide wire for resistance measurement on one side (width 3 cm) The center of the aluminum electrode side, 3 cm long. Then, a two-layer flexible printed circuit board (width 2 cm, length 1 cm) including the same aluminum electrode was aligned and bonded so that the electrodes overlap each other. The glass substrate and the double were pressed at 10 N, 180 ° C and 20 seconds. The laminate of the layer of the flexible printed circuit board is thermocompression bonded to obtain a bonded structure. Further, a two-layer flexible printed circuit board in which an aluminum electrode is directly formed on a polyimide film is used.

連接電阻之測定:利用四端子法測定所獲得之連接構造體中相對向之電極間的連接電阻。又,以下述基準判定連接電阻。Measurement of connection resistance: The connection resistance between the opposing electrodes in the obtained connection structure was measured by a four-terminal method. Further, the connection resistance was determined based on the following criteria.

[連接電阻之判定基準][Determination of connection resistance]

○○:連接電阻為2.0 Ω以下○○: The connection resistance is 2.0 Ω or less

○:連接電阻超過2.0 Ω且為3.0 Ω以下○: The connection resistance exceeds 2.0 Ω and is 3.0 Ω or less.

△:連接電阻超過3.0 Ω且為5.0 Ω以下△: The connection resistance exceeds 3.0 Ω and is 5.0 Ω or less.

×:連接電阻超過5.0 Ω×: The connection resistance exceeds 5.0 Ω

(7)耐衝擊性(7) Impact resistance

使上述(6)連接電阻之評價中所獲得的連接構造體自高度70 cm之位置落下,確認導通狀況,藉此進行耐衝擊性之評價。將電阻值自初期電阻值之上升率為50%以下之情形判定為「良好」,將電阻值自初期電阻值之上升率超過50%之情形判定為「不佳」。The connection structure obtained by the evaluation of the connection resistance of the above (6) was dropped from a position of 70 cm in height, and the conduction state was confirmed, whereby the impact resistance was evaluated. When the resistance value was 50% or less from the initial resistance value, it was judged as "good", and the case where the resistance value was increased from the initial resistance value by more than 50% was judged as "poor".

(8)有無壓痕形成(8) With or without indentation formation

使用微分干涉顯微鏡,自上述(6)連接電阻之評價中所獲得的連接構造體之玻璃基板側觀察設置於玻璃基板上之電極,以下述基準判定導電性粒子所接觸之電極有無壓痕形成。再者,關於電極有無壓痕形成,係以電極面積為0.02 mm2 之方式利用微分干涉顯微鏡進行觀察,算出電極每0.02 mm2 之壓痕之個數。利用微分干涉顯微鏡觀察任意 10個位置,算出電極每0.02 mm2 之壓痕之個數之平均值。Using the differential interference microscope, the electrode provided on the glass substrate was observed from the side of the glass substrate of the bonded structure obtained in the evaluation of the connection resistance of the above (6), and the presence or absence of the indentation of the electrode in contact with the conductive particles was determined based on the following criteria. Further, regarding the presence or absence of the formation of the indentation of the electrode, the observation was performed by a differential interference microscope so that the electrode area was 0.02 mm 2 , and the number of indentations per 0.02 mm 2 of the electrode was calculated. The arbitrary interference was observed by a differential interference microscope, and the average value of the number of indentations per 0.02 mm 2 of the electrode was calculated.

[有無壓痕形成之判定基準][There is no basis for the formation of indentation]

○○:電極每0.02 mm2 之壓痕為25個以上○○: The number of indentations per 0.02 mm 2 of the electrode is 25 or more

○:電極每0.02 mm2 之壓痕為20個以上且未達25個○: The number of indentations per 0.02 mm 2 of the electrode is 20 or more and less than 25

△:電極每0.02 mm2 之壓痕為5個以上且未達20個△: The number of indentations per 0.02 mm 2 of the electrode is 5 or more and less than 20

×:電極每0.02 mm2 之壓痕未達5個×: The number of indentations per 0.02 mm 2 of the electrode is less than 5

將結果表示於下述表1、2中。The results are shown in Tables 1 and 2 below.

再者,實施例21~40及比較例4~6之導電性粒子係與實施例1~20及比較例1~3之導電性粒子分開製作。Further, the conductive particles of Examples 21 to 40 and Comparative Examples 4 to 6 were produced separately from the conductive particles of Examples 1 to 20 and Comparative Examples 1 to 3.

(實施例21)(Example 21)

準備粒徑為3.0 μm之二乙烯苯共聚物樹脂粒子(積水化學工業公司製造之「Micropearl SP-203」)。A divinylbenzene copolymer resin particle ("Micropearl SP-203" manufactured by Sekisui Chemical Co., Ltd.) having a particle diameter of 3.0 μm was prepared.

使用超音波分散器使上述樹脂粒子10重量份分散於含有鈀觸媒溶液5重量%之鹼溶液100重量份中後,過濾溶液,藉此取出樹脂粒子。繼而,將樹脂粒子添加於二甲胺硼烷1重量%溶液100重量份中,使樹脂粒子之表面活化。將表面經活化之樹脂粒子充分水洗後,添加於蒸餾水500重量份中使其分散,藉此獲得懸浮液。10 parts by weight of the above resin particles were dispersed in 100 parts by weight of an alkali solution containing 5 wt% of a palladium catalyst solution using an ultrasonic disperser, and then the solution was filtered to take out the resin particles. Then, the resin particles were added to 100 parts by weight of a 1% by weight solution of dimethylamine borane to activate the surface of the resin particles. The surface-activated resin particles were sufficiently washed with water, and then added to 500 parts by weight of distilled water to be dispersed, thereby obtaining a suspension.

又,準備含有硫酸鎳0.23 mol/L、二甲胺硼烷0.92 mol/L、檸檬酸鈉0.5 mol/L及鎢酸鈉0.01 mol/L之鍍鎳液(pH值8.5)。Further, a nickel plating solution (pH 8.5) containing 0.23 mol/L of nickel sulfate, 0.92 mol/L of dimethylamine borane, 0.5 mol/L of sodium citrate, and 0.01 mol/L of sodium tungstate was prepared.

一面於60℃下攪拌所獲得之懸浮液,一面將上述鍍鎳液緩緩滴加至懸浮液中,進行非電解鍍鎳。其後,藉由過濾懸浮液而取出粒子,進行水洗、乾燥,藉此獲得於樹脂粒子之表面配置有鎳-硼-鎢導電層(厚度0.1 μm)之導電性粒子。While the obtained suspension was stirred at 60 ° C, the nickel plating solution was gradually added dropwise to the suspension to carry out electroless nickel plating. Thereafter, the particles were taken out by filtration of the suspension, washed with water, and dried to obtain conductive particles in which a nickel-boron-tungsten conductive layer (thickness: 0.1 μm) was disposed on the surface of the resin particles.

(實施例22)(Example 22)

除將鎢酸鈉濃度變更為0.12 mol/L以外,以與實施例21同樣之方式獲得於樹脂粒子之表面配置有鎳-硼-鎢導電層(厚度0.1 μm)之導電性粒子。Conductive particles in which a nickel-boron-tungsten conductive layer (thickness: 0.1 μm) was disposed on the surface of the resin particles were obtained in the same manner as in Example 21 except that the sodium tungstate concentration was changed to 0.12 mol/L.

(實施例23)(Example 23)

除將鎢酸鈉濃度變更為0.23 mol/L以外,以與實施例21 同樣之方式獲得於樹脂粒子之表面配置有鎳-硼-鎢導電層(厚度0.1 μm)之導電性粒子。Except that the concentration of sodium tungstate was changed to 0.23 mol/L, and Example 21 In the same manner, conductive particles in which a nickel-boron-tungsten conductive layer (thickness: 0.1 μm) was disposed on the surface of the resin particles were obtained.

(實施例24)(Example 24)

除將鎢酸鈉濃度變更為0.35 mol/L以外,以與實施例21同樣之方式獲得於樹脂粒子之表面配置有鎳-硼-鎢導電層(厚度0.1 μm)之導電性粒子。Conductive particles in which a nickel-boron-tungsten conductive layer (thickness: 0.1 μm) was disposed on the surface of the resin particles were obtained in the same manner as in Example 21 except that the concentration of sodium tungstate was changed to 0.35 mol/L.

(實施例25)(Embodiment 25)

除將二甲胺硼烷濃度變更為2.76 mol/L,以及將鎢酸鈉濃度變更為0.35 mol/L以外,以與實施例21同樣之方式獲得於樹脂粒子之表面配置有鎳-硼-鎢導電層(厚度0.1 μm)之導電性粒子。A nickel-boron-tungsten was disposed on the surface of the resin particles in the same manner as in Example 21 except that the dimethylamine borane concentration was changed to 2.76 mol/L and the sodium tungstate concentration was changed to 0.35 mol/L. Conductive layer (thickness 0.1 μm) of conductive particles.

(實施例26)(Example 26)

(1)鈀附著步驟(1) Palladium attachment step

準備粒徑為5.0 μm之二乙烯苯樹脂粒子(積水化學工業公司製造之「Micropearl SP-205」)。將該樹脂粒子蝕刻、水洗。其次,將樹脂粒子添加於含有鈀觸媒8重量%之鈀觸媒化溶液100 mL中,並進行攪拌。其後,進行過濾、洗淨。將樹脂粒子添加於pH值為6之0.5重量%二甲胺硼烷溶液中,獲得附著有鈀之樹脂粒子。Divinyl benzene resin particles ("Micropearl SP-205" manufactured by Sekisui Chemical Co., Ltd.) having a particle diameter of 5.0 μm were prepared. The resin particles were etched and washed with water. Next, the resin particles were added to 100 mL of a palladium catalyst solution containing 8 wt% of a palladium catalyst, and stirred. Thereafter, it was filtered and washed. The resin particles were added to a 0.5 wt% dimethylamine borane solution having a pH of 6, to obtain resin particles to which palladium adhered.

(2)芯物質附著步驟(2) Core substance attachment step

於離子交換水300 mL中將附著有鈀之樹脂粒子攪拌3分鐘使其分散,獲得分散液。其次,將金屬鎳粒子漿料(平均粒徑100 nm)1 g歷時3分鐘添加於上述分散液中,獲得附著有芯物質之樹脂粒子。The resin particles to which palladium adhered were stirred for 3 minutes in 300 mL of ion-exchanged water to obtain a dispersion. Next, 1 g of a metal nickel particle slurry (average particle diameter: 100 nm) was added to the above dispersion liquid for 3 minutes to obtain resin particles to which a core substance adhered.

(3)非電解鍍鎳步驟(3) Electroless nickel plating step

以與實施例21同樣之方式獲得於樹脂粒子之表面配置有鎳-硼-鎢導電層(厚度0.1 μm)之導電性粒子。In the same manner as in Example 21, conductive particles in which a nickel-boron-tungsten conductive layer (thickness: 0.1 μm) was disposed on the surface of the resin particles were obtained.

(實施例27)(Example 27)

除將鎢酸鈉濃度變更為0.35 mol/L以外,以與實施例26同樣之方式獲得於樹脂粒子之表面配置有鎳-硼-鎢導電層(厚度0.1 μm)之導電性粒子。Conductive particles in which a nickel-boron-tungsten conductive layer (thickness: 0.1 μm) was disposed on the surface of the resin particles were obtained in the same manner as in Example 26 except that the concentration of sodium tungstate was changed to 0.35 mol/L.

(實施例28)(Embodiment 28)

(1)絕緣性粒子之製作(1) Production of insulating particles

於安裝有4口可分離式蓋、攪拌葉片、三通活栓、冷卻管及溫度探針之1000 mL之可分離式燒瓶中,將含有甲基丙烯酸甲酯100 mmol、N,N,N-三甲基-N-2-甲基丙烯醯氧基乙基氯化銨1 mmol及2,2'-偶氮雙(2-脒基丙烷)二鹽酸鹽1 mmol的單體組合物以固形物成分率為5重量%之方式稱取於離子交換水中後,以200 rpm進行攪拌,並於氮氣環境下以70℃進行24小時聚合。反應結束後進行冷凍乾燥,獲得表面具有銨基、平均粒徑為220 nm且CV值為10%之絕緣性粒子。In a 1000 mL separable flask equipped with four separable caps, stirring blades, three-way stopcocks, cooling tubes and temperature probes, it will contain methyl methacrylate 100 mmol, N, N, N-three Methyl-N-2-methylpropenyloxyethylammonium chloride 1 mmol and 2,2'-azobis(2-amidinopropane) dihydrochloride 1 mmol of monomer composition as solid matter After the component ratio was 5% by weight, it was weighed in ion-exchanged water, stirred at 200 rpm, and polymerized at 70 ° C for 24 hours under a nitrogen atmosphere. After completion of the reaction, lyophilization was carried out to obtain insulating particles having an ammonium group on the surface, an average particle diameter of 220 nm, and a CV value of 10%.

於超音波照射下使絕緣性粒子分散於離子交換水中,獲得絕緣性粒子之10重量%水分散液。The insulating particles were dispersed in ion-exchanged water under ultrasonic irradiation to obtain a 10% by weight aqueous dispersion of the insulating particles.

使實施例26所獲得之導電性粒子10 g分散於離子交換水500 mL中,添加絕緣性粒子之水分散液4 g,於室溫下攪拌6小時。利用3 μm之篩網過濾器過濾後,進而利用甲醇洗淨,並進行乾燥,獲得附著有絕緣性粒子之導電性粒 子。10 g of the conductive particles obtained in Example 26 was dispersed in 500 mL of ion-exchanged water, 4 g of an aqueous dispersion of insulating particles was added, and the mixture was stirred at room temperature for 6 hours. After filtering with a 3 μm mesh filter, it is washed with methanol and dried to obtain conductive particles to which insulating particles are attached. child.

利用掃描式電子顯微鏡(SEM)進行觀察,可見於導電性粒子之表面僅形成有1層絕緣性粒子之被覆層。藉由圖像分析算出相對於自導電性粒子之中心起2.5 μm之面積的絕緣性粒子之被覆面積(即絕緣性粒子之粒徑之投影面積),結果被覆率為30%。Observation by a scanning electron microscope (SEM) revealed that only one layer of insulating particles was formed on the surface of the conductive particles. The coverage area of the insulating particles (i.e., the projected area of the particle diameter of the insulating particles) with respect to the area of 2.5 μm from the center of the conductive particles was calculated by image analysis, and the coverage was 30%.

(實施例29)(Example 29)

除將鎢酸鈉濃度變更為0.46 mol/L以外,以與實施例21同樣之方式獲得於樹脂粒子之表面配置有鎳-硼-鎢導電層(厚度0.1 μm)之導電性粒子。Conductive particles in which a nickel-boron-tungsten conductive layer (thickness: 0.1 μm) was disposed on the surface of the resin particles were obtained in the same manner as in Example 21 except that the concentration of sodium tungstate was changed to 0.46 mol/L.

(實施例30)(Embodiment 30)

除將二甲胺硼烷濃度變更為4.60 mol/L,以及將鎢酸鈉濃度變更為0.23 mol/L以外,以與實施例21同樣之方式獲得於樹脂粒子之表面配置有鎳-硼-鎢導電層(厚度0.1 μm)之導電性粒子。A nickel-boron-tungsten was disposed on the surface of the resin particles in the same manner as in Example 21 except that the dimethylamine borane concentration was changed to 4.60 mol/L and the sodium tungstate concentration was changed to 0.23 mol/L. Conductive layer (thickness 0.1 μm) of conductive particles.

(比較例4)(Comparative Example 4)

除將鍍鎳液中之二甲胺硼烷0.92 mol/L變更為次亞磷酸鈉0.5 mol/L以外,以與實施例21同樣之方式獲得於樹脂粒子之表面配置有含有鎳、鎢及磷之導電層(厚度0.1 μm)之導電性粒子。導電層之整體100重量%中磷之含量為8.7重量%。In the same manner as in Example 21 except that 0.92 mol/L of dimethylamine borane in the nickel plating solution was changed to 0.5 mol/L of sodium hypophosphite, nickel, tungsten and phosphorus were disposed on the surface of the resin particles. Conductive particles (0.1 μm thick) of conductive particles. The content of phosphorus in 100% by weight of the entire conductive layer was 8.7% by weight.

(比較例5)(Comparative Example 5)

除不使用鍍鎳液中之鎢酸鈉0.01 mol/L以外,以與實施例21同樣之方式獲得於樹脂粒子之表面配置有含有鎳及硼 之導電層(厚度0.1 μm)之導電性粒子。In the same manner as in Example 21, except that 0.01 mol/L of sodium tungstate in the nickel plating solution was not used, nickel and boron were disposed on the surface of the resin particles. Conductive particles (0.1 μm thick) of conductive particles.

(實施例31)(Example 31)

準備粒徑為3.0 μm之二乙烯苯共聚物樹脂粒子(積水化學工業公司製造之「Micropearl SP-203」)。A divinylbenzene copolymer resin particle ("Micropearl SP-203" manufactured by Sekisui Chemical Co., Ltd.) having a particle diameter of 3.0 μm was prepared.

使用超音波分散器使上述樹脂粒子10重量份分散於含有鈀觸媒溶液5重量%之鹼溶液100重量份中後,過濾溶液,藉此取出樹脂粒子。繼而,將樹脂粒子添加於二甲胺硼烷1重量%溶液100重量份中,使樹脂粒子之表面活化。將表面經活化之樹脂粒子充分水洗後,添加於蒸餾水500重量份中使其分散,藉此獲得懸浮液。10 parts by weight of the above resin particles were dispersed in 100 parts by weight of an alkali solution containing 5 wt% of a palladium catalyst solution using an ultrasonic disperser, and then the solution was filtered to take out the resin particles. Then, the resin particles were added to 100 parts by weight of a 1% by weight solution of dimethylamine borane to activate the surface of the resin particles. The surface-activated resin particles were sufficiently washed with water, and then added to 500 parts by weight of distilled water to be dispersed, thereby obtaining a suspension.

又,準備含有硫酸鎳0.23 mol/L、二甲胺硼烷0.92 mol/L、檸檬酸鈉0.5 mol/L及鉬酸鈉0.01 mol/L之鍍鎳液(pH值8.5)。Further, a nickel plating solution (pH 8.5) containing 0.23 mol/L of nickel sulfate, 0.92 mol/L of dimethylamine borane, 0.5 mol/L of sodium citrate, and 0.01 mol/L of sodium molybdate was prepared.

一面於60℃下攪拌所獲得之懸浮液,一面將上述鍍鎳液緩緩滴加至懸浮液中,進行非電解鍍鎳。其後,藉由過濾懸浮液而取出粒子,進行水洗、乾燥,藉此獲得於樹脂粒子之表面配置有鎳-硼-鉬導電層(厚度0.1 μm)之導電性粒子。While the obtained suspension was stirred at 60 ° C, the nickel plating solution was gradually added dropwise to the suspension to carry out electroless nickel plating. Thereafter, the particles were taken out by filtration of the suspension, washed with water, and dried to obtain conductive particles in which a nickel-boron-molybdenum conductive layer (thickness: 0.1 μm) was disposed on the surface of the resin particles.

(實施例32)(Example 32)

除將鉬酸鈉濃度變更為0.12 mol/L以外,以與實施例31同樣之方式獲得於樹脂粒子之表面配置有鎳-硼-鉬導電層(厚度0.1 μm)之導電性粒子。Conductive particles in which a nickel-boron-molybdenum conductive layer (thickness: 0.1 μm) was disposed on the surface of the resin particles were obtained in the same manner as in Example 31 except that the sodium molybdate concentration was changed to 0.12 mol/L.

(實施例33)(Example 33)

除將鉬酸鈉濃度變更為0.23 mol/L以外,以與實施例31 同樣之方式獲得於樹脂粒子之表面配置有鎳-硼-鉬導電層(厚度0.1 μm)之導電性粒子。Except that the sodium molybdate concentration was changed to 0.23 mol/L, and Example 31 In the same manner, conductive particles in which a nickel-boron-molybdenum conductive layer (thickness: 0.1 μm) was disposed on the surface of the resin particles were obtained.

(實施例34)(Example 34)

除將鉬酸鈉濃度變更為0.35 mol/L以外,以與實施例31同樣之方式獲得於樹脂粒子之表面配置有鎳-硼-鉬導電層(厚度0.1 μm)之導電性粒子。Conductive particles in which a nickel-boron-molybdenum conductive layer (thickness: 0.1 μm) was disposed on the surface of the resin particles were obtained in the same manner as in Example 31 except that the sodium molybdate concentration was changed to 0.35 mol/L.

(實施例35)(Example 35)

除將二甲胺硼烷濃度變更為2.76 mol/L,以及將鉬酸鈉濃度變更為0.35 mol/L以外,以與實施例31同樣之方式獲得於樹脂粒子之表面配置有鎳-硼-鉬導電層(厚度0.1 μm)之導電性粒子。In the same manner as in Example 31 except that the concentration of dimethylamine borane was changed to 2.76 mol/L, and the concentration of sodium molybdate was changed to 0.35 mol/L, nickel-boron-molybdenum was disposed on the surface of the resin particles in the same manner as in Example 31. Conductive layer (thickness 0.1 μm) of conductive particles.

(實施例36)(Example 36)

(1)鈀附著步驟(1) Palladium attachment step

準備粒徑為5.0 μm之二乙烯苯樹脂粒子(積水化學工業公司製造之「Micropearl SP-205」)。將該樹脂粒子蝕刻、水洗。其次,將樹脂粒子添加於含有鈀觸媒8重量%之鈀觸媒化溶液100 mL中,並進行攪拌。其後,進行過濾、洗淨。將樹脂粒子添加於pH值為6之0.5重量%二甲胺硼烷溶液中,獲得附著有鈀之樹脂粒子。Divinyl benzene resin particles ("Micropearl SP-205" manufactured by Sekisui Chemical Co., Ltd.) having a particle diameter of 5.0 μm were prepared. The resin particles were etched and washed with water. Next, the resin particles were added to 100 mL of a palladium catalyst solution containing 8 wt% of a palladium catalyst, and stirred. Thereafter, it was filtered and washed. The resin particles were added to a 0.5 wt% dimethylamine borane solution having a pH of 6, to obtain resin particles to which palladium adhered.

(2)芯物質附著步驟(2) Core substance attachment step

於離子交換水300 mL中將附著有鈀之樹脂粒子攪拌3分鐘使其分散,獲得分散液。其次,將金屬鎳粒子漿料(平均粒徑100 nm)1 g歷時3分鐘添加於上述分散液中,獲得附著有芯物質之樹脂粒子。The resin particles to which palladium adhered were stirred for 3 minutes in 300 mL of ion-exchanged water to obtain a dispersion. Next, 1 g of a metal nickel particle slurry (average particle diameter: 100 nm) was added to the above dispersion liquid for 3 minutes to obtain resin particles to which a core substance adhered.

(3)非電解鍍鎳步驟(3) Electroless nickel plating step

以與實施例31同樣之方式獲得於樹脂粒子之表面配置有鎳-硼-鉬導電層(厚度0.1 μm)之導電性粒子。In the same manner as in Example 31, conductive particles in which a nickel-boron-molybdenum conductive layer (thickness: 0.1 μm) was disposed on the surface of the resin particles were obtained.

(實施例37)(Example 37)

除將鉬酸鈉濃度變更為0.35 mol/L以外,以與實施例36同樣之方式獲得於樹脂粒子之表面配置有鎳-硼-鉬導電層(厚度0.1 μm)之導電性粒子。Conductive particles in which a nickel-boron-molybdenum conductive layer (thickness: 0.1 μm) was disposed on the surface of the resin particles were obtained in the same manner as in Example 36 except that the sodium molybdate concentration was changed to 0.35 mol/L.

(實施例38)(Example 38)

(1)絕緣性粒子之製作(1) Production of insulating particles

於安裝有4口可分離式蓋、攪拌葉片、三通活栓、冷卻管及溫度探針之1000 mL之可分離式燒瓶中,將含有甲基丙烯酸甲酯100 mmol、N,N,N-三甲基-N-2-甲基丙烯醯氧基乙基氯化銨1 mmol及2,2'-偶氮雙(2-脒基丙烷)二鹽酸鹽1 mmol的單體組合物以固形物成分率為5重量%之方式稱取於離子交換水中後,以200 rpm進行攪拌,並於氮氣環境下以70℃進行24小時聚合。反應結束後進行冷凍乾燥,獲得表面具有銨基、平均粒徑為220 nm且CV值為10%之絕緣性粒子。In a 1000 mL separable flask equipped with four separable caps, stirring blades, three-way stopcocks, cooling tubes and temperature probes, it will contain methyl methacrylate 100 mmol, N, N, N-three Methyl-N-2-methylpropenyloxyethylammonium chloride 1 mmol and 2,2'-azobis(2-amidinopropane) dihydrochloride 1 mmol of monomer composition as solid matter After the component ratio was 5% by weight, it was weighed in ion-exchanged water, stirred at 200 rpm, and polymerized at 70 ° C for 24 hours under a nitrogen atmosphere. After completion of the reaction, lyophilization was carried out to obtain insulating particles having an ammonium group on the surface, an average particle diameter of 220 nm, and a CV value of 10%.

於超音波照射下使絕緣性粒子分散於離子交換水中,獲得絕緣性粒子之10重量%水分散液。The insulating particles were dispersed in ion-exchanged water under ultrasonic irradiation to obtain a 10% by weight aqueous dispersion of the insulating particles.

使實施例36所獲得之導電性粒子10 g分散於離子交換水500 mL中,添加絕緣性粒子之水分散液4 g,於室溫下攪拌6小時。利用3 μm之篩網過濾器過濾後,進而利用甲醇洗淨,並進行乾燥,獲得附著有絕緣性粒子之導電性粒 子。10 g of the conductive particles obtained in Example 36 was dispersed in 500 mL of ion-exchanged water, 4 g of an aqueous dispersion of insulating particles was added, and the mixture was stirred at room temperature for 6 hours. After filtering with a 3 μm mesh filter, it is washed with methanol and dried to obtain conductive particles to which insulating particles are attached. child.

利用掃描式電子顯微鏡(SEM)進行觀察,可見於導電性粒子之表面僅形成有1層絕緣性粒子之被覆層。藉由圖像分析算出相對於自導電性粒子之中心起2.5 μm之面積的絕緣性粒子之被覆面積(即絕緣性粒子之粒徑之投影面積),結果被覆率為30%。Observation by a scanning electron microscope (SEM) revealed that only one layer of insulating particles was formed on the surface of the conductive particles. The coverage area of the insulating particles (i.e., the projected area of the particle diameter of the insulating particles) with respect to the area of 2.5 μm from the center of the conductive particles was calculated by image analysis, and the coverage was 30%.

(實施例39)(Example 39)

除將鉬酸鈉濃度變更為0.46 mol/L以外,以與實施例31同樣之方式獲得於樹脂粒子之表面配置有鎳-硼-鉬導電層(厚度0.1 μm)之導電性粒子。Conductive particles in which a nickel-boron-molybdenum conductive layer (thickness: 0.1 μm) was disposed on the surface of the resin particles were obtained in the same manner as in Example 31 except that the sodium molybdate concentration was changed to 0.46 mol/L.

(實施例40)(Embodiment 40)

除將二甲胺硼烷濃度變更為4.60 mol/L,以及將鉬酸鈉濃度變更為0.23 mol/L以外,以與實施例31同樣之方式獲得於樹脂粒子之表面配置有鎳-硼-鉬導電層(厚度0.1 μm)之導電性粒子。In the same manner as in Example 31 except that the concentration of dimethylamine borane was changed to 4.60 mol/L, and the concentration of sodium molybdate was changed to 0.23 mol/L, nickel-boron-molybdenum was disposed on the surface of the resin particles in the same manner as in Example 31. Conductive layer (thickness 0.1 μm) of conductive particles.

(比較例6)(Comparative Example 6)

除將鍍鎳液中之二甲胺硼烷0.92 mol/L變更為次亞磷酸鈉0.5 mol/L以外,以與實施例31同樣之方式獲得於樹脂粒子之表面配置有含有鎳、鉬及磷之導電層(厚度0.1 μm)之導電性粒子。導電層之整體100重量%中之磷含量為9.5重量%。In the same manner as in Example 31 except that 0.92 mol/L of dimethylamine borane in the nickel plating solution was changed to 0.5 mol/L of sodium hypophosphite, nickel, molybdenum and phosphorus were disposed on the surface of the resin particles. Conductive particles (0.1 μm thick) of conductive particles. The phosphorus content in 100% by weight of the entire conductive layer was 9.5% by weight.

(實施例21~40及比較例4~6之評價)(Evaluation of Examples 21 to 40 and Comparative Examples 4 to 6)

(1)導電性粒子之壓縮彈性模數(10%K值)(1) Compressive elastic modulus of conductive particles (10% K value)

使用微小壓縮試驗機(Fischer公司製造之「Fischerscope H-100」)測定所獲得之導電性粒子之壓縮彈性模數(10%K值)。Use a micro compression tester (Fischerscope, manufactured by Fischer) H-100") The compression elastic modulus (10% K value) of the obtained conductive particles was measured.

(2)導電性粒子之壓縮回復率(2) Compressive recovery rate of conductive particles

使用微小壓縮試驗機(Fischer公司製造之「Fischerscope H-100」),測定將所獲得之導電性粒子壓縮30%時之壓縮回復率。The compression recovery ratio at which the obtained conductive particles were compressed by 30% was measured using a micro compression tester (Fischerscope H-100 manufactured by Fischer Co., Ltd.).

(3)導電層之整體100重量%中鎳、硼、磷、鎢及鉬之含量(3) The content of nickel, boron, phosphorus, tungsten and molybdenum in 100% by weight of the entire conductive layer

於60%硝酸5 mL與37%鹽酸10 mL之混合液中添加導電性粒子5 g,使導電層完全溶解而獲得溶液。使用所獲得之溶液,利用ICP-MS分析儀(日立製作所公司製造)分析鎳、硼、磷、鎢及鉬之含量。再者,實施例之導電性粒子之導電層不含磷。5 g of conductive particles were added to a mixture of 5 mL of 60% nitric acid and 10 mL of 37% hydrochloric acid to completely dissolve the conductive layer to obtain a solution. Using the obtained solution, the contents of nickel, boron, phosphorus, tungsten, and molybdenum were analyzed by an ICP-MS analyzer (manufactured by Hitachi, Ltd.). Further, the conductive layer of the conductive particles of the examples does not contain phosphorus.

(4)鍍敷狀態(4) Plating state

利用掃描型電子顯微鏡觀察50個所獲得之導電性粒子之鍍敷狀態。觀察有無鍍敷裂縫或鍍敷剝離等鍍敷不均。將確認到鍍敷不均之導電性粒子為4個以下之情形判定為「良好」,將確認到鍍敷不均之導電性粒子為5個以上之情形判定為「不佳」。The plating state of 50 obtained conductive particles was observed by a scanning electron microscope. Observe the presence or absence of uneven plating such as plating cracks or plating peeling. When it was confirmed that the number of the conductive particles having uneven plating was four or less, it was judged as "good", and it was judged that the number of the conductive particles having uneven plating was five or more.

(5)凝集狀態(5) Agglutination state

將雙酚A型環氧樹脂(三菱化學公司製造之「Epikote 1009」)10重量份、丙烯酸系橡膠(重量平均分子量約80萬)40重量份、甲基乙基酮200重量份、微膠囊型硬化劑(旭化成化學公司製造之「HX3941HP」)50重量份、矽烷偶合 劑(Dow Corning Toray Silicone公司製造之「SH6040」)2重量份混合,以含量成為3重量%之方式添加導電性粒子並使其分散,獲得各向異性導電材料。10 parts by weight of bisphenol A type epoxy resin ("Epikote 1009" manufactured by Mitsubishi Chemical Corporation), 40 parts by weight of acrylic rubber (weight average molecular weight: about 800,000), 200 parts by weight of methyl ethyl ketone, and microcapsule type Hardener ("HX3941HP" manufactured by Asahi Kasei Chemicals Co., Ltd.) 50 parts by weight, decane coupling 2 parts by weight of a mixture ("SH6040" manufactured by Dow Corning Toray Silicone Co., Ltd.) was added, and conductive particles were added and dispersed so as to have a content of 3% by weight to obtain an anisotropic conductive material.

將所獲得之各向異性導電材料於25℃下保管72小時。保管後,評價各向異性導電材料中是否有凝集之導電性粒子沈澱。將無凝集之導電性粒子沈澱之情形判定為「良好」,將有凝集之導電性粒子沈澱之情形判定為「不佳」。The obtained anisotropic conductive material was stored at 25 ° C for 72 hours. After storage, it was evaluated whether or not agglomerated conductive particles precipitated in the anisotropic conductive material. The case where the non-aggregated conductive particles were precipitated was judged as "good", and the case where the aggregated conductive particles were precipitated was judged as "poor".

(6)初期之連接電阻(6) Initial connection resistance

連接構造體之製作:將雙酚A型環氧樹脂(三菱化學公司製造之「Epikote 1009」)10重量份、丙烯酸系橡膠(重量平均分子量約80萬)40重量份、甲基乙基酮200重量份、微膠囊型硬化劑(旭化成化學公司製造之「HX3941HP」)50重量份、矽烷偶合劑(Dow Corning Toray Silicone公司製造之「SH6040」)2重量份混合,以含量成為3重量%之方式添加導電性粒子並使其分散,獲得樹脂組合物。Production of a connection structure: 10 parts by weight of bisphenol A type epoxy resin ("Epikote 1009" manufactured by Mitsubishi Chemical Corporation), 40 parts by weight of acrylic rubber (weight average molecular weight: about 800,000), and methyl ethyl ketone 200 50 parts by weight of a microcapsule-type hardener ("HX3941HP" manufactured by Asahi Kasei Chemicals Co., Ltd.) and 2 parts by weight of a decane coupling agent ("SH6040" manufactured by Dow Corning Toray Silicone Co., Ltd.) were mixed in a weight ratio of 3% by weight. The conductive particles were added and dispersed to obtain a resin composition.

將所獲得之樹脂組合物塗佈於單面經脫模處理且厚度為50 μm之PET(聚對苯二甲酸乙二酯)膜上,以70℃之熱風乾燥5分鐘而製作各向異性導電膜。所獲得之各向異性導電膜之厚度為12 μm。The obtained resin composition was applied onto a PET (polyethylene terephthalate) film having a thickness of 50 μm which was subjected to release treatment on one side, and dried at 70 ° C for 5 minutes to produce anisotropic conductivity. membrane. The thickness of the anisotropic conductive film obtained was 12 μm.

將所獲得之各向異性導電膜切斷成5 mm×5 mm之大小。將切斷而成之各向異性導電膜貼附於一側包含具有電阻測定用之引導線的鋁電極(高度為0.2 μm,L/S=20 μm/20 μm)之玻璃基板(寬3 cm、長3 cm)的鋁電極側之大致中 央。繼而,將包含相同之鋁電極之雙層可撓性印刷基板(寬2 cm、長1 cm)以電極彼此重疊之方式對準位置後貼合。以10 N、180℃及20秒之壓接條件對該玻璃基板與雙層可撓性印刷基板之積層體進行熱壓接而獲得連接構造體。再者,係使用於聚醯亞胺膜上直接形成有鋁電極之雙層可撓性印刷基板。The obtained anisotropic conductive film was cut into a size of 5 mm × 5 mm. The cut anisotropic conductive film was attached to a glass substrate (having a height of 0.2 μm, L/S=20 μm/20 μm) including a guide wire for resistance measurement on one side (width 3 cm) , 3 cm long, the middle of the aluminum electrode side Central. Then, a two-layer flexible printed circuit board (width 2 cm, length 1 cm) including the same aluminum electrode was attached to the position so that the electrodes overlap each other, and then bonded. The laminated body of the glass substrate and the two-layer flexible printed circuit board was thermocompression-bonded under the pressure conditions of 10 N, 180 ° C, and 20 seconds to obtain a bonded structure. Further, a two-layer flexible printed circuit board in which an aluminum electrode is directly formed on a polyimide film is used.

連接電阻之測定:利用四端子法測定所獲得之連接構造體中相對向之電極間的連接電阻。又,以下述基準判定初期之連接電阻。Measurement of connection resistance: The connection resistance between the opposing electrodes in the obtained connection structure was measured by a four-terminal method. Further, the initial connection resistance was determined based on the following criteria.

[連接電阻之判定基準][Determination of connection resistance]

○○:連接電阻為2.0 Ω以下○○: The connection resistance is 2.0 Ω or less

○:連接電阻超過2.0 Ω且為3.0 Ω以下○: The connection resistance exceeds 2.0 Ω and is 3.0 Ω or less.

△:連接電阻超過3.0 Ω且為4.0 Ω以下△: The connection resistance exceeds 3.0 Ω and is less than 4.0 Ω.

△△:連接電阻超過4.0 Ω且為5.0 Ω以下△△: The connection resistance exceeds 4.0 Ω and is 5.0 Ω or less.

×:連接電阻超過5.0 Ω×: The connection resistance exceeds 5.0 Ω

(7)高溫高濕試驗後之連接電阻(7) Connecting resistance after high temperature and high humidity test

將上述(6)連接構造體之製作中所獲得之連接構造體於85℃及濕度85%之條件下放置100小時。利用四端子法測定經放置後之連接構造體的電極間之連接電阻,將所獲得之測定值作為高溫高濕試驗後之連接電阻。又,以下述基準判定高溫高濕試驗後之連接電阻。The bonded structure obtained in the production of the above (6) joined structure was allowed to stand at 85 ° C and a humidity of 85% for 100 hours. The connection resistance between the electrodes of the connected structure after standing was measured by a four-terminal method, and the obtained measured value was made into the connection resistance after high temperature and high humidity test. Further, the connection resistance after the high-temperature and high-humidity test was determined based on the following criteria.

[連接電阻之判定基準][Determination of connection resistance]

○○:連接電阻為2.0 Ω以下○○: The connection resistance is 2.0 Ω or less

○:連接電阻超過2.0 Ω且為3.0 Ω以下○: The connection resistance exceeds 2.0 Ω and is 3.0 Ω or less.

△:連接電阻超過3.0 Ω且為4.0 Ω以下△: The connection resistance exceeds 3.0 Ω and is less than 4.0 Ω.

△△:連接電阻超過4.0 Ω且為5.0 Ω以下△△: The connection resistance exceeds 4.0 Ω and is 5.0 Ω or less.

×:連接電阻超過5.0 Ω×: The connection resistance exceeds 5.0 Ω

(8)耐衝擊性(8) Impact resistance

使上述(6)連接構造體之製作中所獲得之連接構造體自高度70 cm之位置落下,確認導通狀況,藉此進行耐衝擊性之評價。將電阻值自初期電阻值之上升率為50%以下之情形判定為「良好」,將電阻值自初期電阻值之上升率超過50%之情形判定為「不佳」。The connection structure obtained in the production of the above-mentioned (6) connection structure was dropped from a position of 70 cm in height, and the conduction state was confirmed, whereby the impact resistance was evaluated. When the resistance value was 50% or less from the initial resistance value, it was judged as "good", and the case where the resistance value was increased from the initial resistance value by more than 50% was judged as "poor".

(9)有無壓痕形成(9) Whether there is indentation formation

使用微分干涉顯微鏡,自上述(6)連接構造體之製作中所獲得的連接構造體之玻璃基板側觀察設置於玻璃基板上之電極,以下述基準判定導電性粒子所接觸之電極有無壓痕形成。再者,關於電極有無壓痕形成,係以電極面積為0.02 mm2 之方式利用微分干涉顯微鏡進行觀察,算出電極每0.02 mm2 之壓痕之個數。利用微分干涉顯微鏡觀察任意10個位置,算出電極每0.02 mm2 之壓痕之個數之平均值。The electrode provided on the glass substrate was observed from the side of the glass substrate of the connection structure obtained in the production of the above-mentioned (6) connection structure by using a differential interference microscope, and the presence or absence of indentation of the electrode in contact with the conductive particles was determined by the following criteria. . Further, regarding the presence or absence of the formation of the indentation of the electrode, the observation was performed by a differential interference microscope so that the electrode area was 0.02 mm 2 , and the number of indentations per 0.02 mm 2 of the electrode was calculated. The arbitrary interference was observed by a differential interference microscope, and the average value of the number of indentations per 0.02 mm 2 of the electrode was calculated.

[有無壓痕形成之判定基準][There is no basis for the formation of indentation]

○○:電極每0.02 mm2 之壓痕為25個以上○○: The number of indentations per 0.02 mm 2 of the electrode is 25 or more

○:電極每0.02 mm2 之壓痕為20個以上且未達25個○: The number of indentations per 0.02 mm 2 of the electrode is 20 or more and less than 25

△:電極每0.02 mm2 之壓痕為5個以上且未達20個△: The number of indentations per 0.02 mm 2 of the electrode is 5 or more and less than 20

×:電極每0.02 mm2 之壓痕為1個以上且未達5個×: The number of indentations per 0.02 mm 2 of the electrode is 1 or more and less than 5

××:電極每0.02 mm2 之壓痕為0個××: 0 indentations per 0.02 mm 2 of the electrode

將結果表示於下述表3、4中。The results are shown in Tables 3 and 4 below.

1‧‧‧導電性粒子1‧‧‧Electrical particles

1a‧‧‧突起1a‧‧‧ Protrusion

2‧‧‧基材粒子2‧‧‧Substrate particles

3‧‧‧導電層3‧‧‧ Conductive layer

3a‧‧‧突起3a‧‧‧ Protrusion

4‧‧‧芯物質4‧‧‧ core material

5‧‧‧絕緣物質5‧‧‧Insulating substances

11‧‧‧導電性粒子11‧‧‧Electrical particles

11a‧‧‧突起11a‧‧‧ Protrusion

12‧‧‧第2導電層12‧‧‧2nd conductive layer

13‧‧‧導電層13‧‧‧ Conductive layer

13a‧‧‧突起13a‧‧‧Protrusion

21‧‧‧導電性粒子21‧‧‧Electrical particles

22‧‧‧導電層22‧‧‧ Conductive layer

22a‧‧‧裂縫22a‧‧‧ crack

51‧‧‧連接構造體51‧‧‧Connection structure

52‧‧‧第1連接對象構件52‧‧‧1st connection object component

52a‧‧‧上面52a‧‧‧above

52b‧‧‧電極52b‧‧‧electrode

53‧‧‧第2連接對象構件53‧‧‧2nd connection object component

53a‧‧‧下面53a‧‧‧ below

53b‧‧‧電極53b‧‧‧electrode

54‧‧‧連接部54‧‧‧Connecting Department

71‧‧‧台71‧‧‧

72‧‧‧壓縮構件72‧‧‧Compressed components

72a‧‧‧平滑端面72a‧‧‧Smooth end face

圖1係表示本發明之第1實施形態之導電性粒子的剖面圖。Fig. 1 is a cross-sectional view showing conductive particles according to a first embodiment of the present invention.

圖2係表示本發明之第2實施形態之導電性粒子的剖面圖。Fig. 2 is a cross-sectional view showing conductive particles according to a second embodiment of the present invention.

圖3係表示本發明之第3實施形態之導電性粒子的剖面圖。Fig. 3 is a cross-sectional view showing conductive particles according to a third embodiment of the present invention.

圖4係以模式方式表示使用本發明之第1實施形態之導電性粒子之連接構造體的前視剖面圖。Fig. 4 is a front cross-sectional view showing a connection structure using conductive particles according to the first embodiment of the present invention in a mode.

圖5係用以說明壓縮導電性粒子時之狀態的模式剖面圖。Fig. 5 is a schematic cross-sectional view for explaining a state in which conductive particles are compressed.

圖6係表示壓縮導電性粒子時導電層產生裂縫時之壓縮荷重值與壓縮位移之關係之一例的模式圖。Fig. 6 is a schematic view showing an example of the relationship between the compression load value and the compression displacement when the conductive layer is cracked when the conductive particles are compressed.

1‧‧‧導電性粒子1‧‧‧Electrical particles

1a‧‧‧突起1a‧‧‧ Protrusion

2‧‧‧基材粒子2‧‧‧Substrate particles

3‧‧‧導電層3‧‧‧ Conductive layer

3a‧‧‧突起3a‧‧‧ Protrusion

4‧‧‧芯物質4‧‧‧ core material

5‧‧‧絕緣物質5‧‧‧Insulating substances

Claims (14)

一種導電性粒子,其包含:基材粒子,及導電層,其配置於上述基材粒子之表面上,且含有鎳、硼、以及鎢及鉬中之至少1種金屬成分;配置於上述基材粒子之表面上且含有鎳、硼、以及上述金屬成分的上述導電層之外側之表面上,未配置其他導電層;且配置於上述基材粒子之表面上之上述導電層之整體100重量%中上述金屬成分之含量為0.01重量%以上、40重量%以下。 An electroconductive particle comprising: a substrate particle and a conductive layer, which is disposed on a surface of the substrate particle, and contains at least one metal component selected from the group consisting of nickel, boron, and tungsten and molybdenum; and is disposed on the substrate On the surface of the particle, on the surface of the outer side of the conductive layer containing nickel, boron, and the metal component, no other conductive layer is disposed; and the conductive layer disposed on the surface of the substrate particle is 100% by weight of the whole The content of the above metal component is 0.01% by weight or more and 40% by weight or less. 如請求項1之導電性粒子,其中配置於上述基材粒子之表面上之上述導電層之整體100重量%中上述硼之含量為0.05重量%以上、4重量%以下。 The conductive particles according to claim 1, wherein the content of the boron in the total 100% by weight of the conductive layer disposed on the surface of the substrate particles is 0.05% by weight or more and 4% by weight or less. 如請求項1或2之導電性粒子,其中配置於上述基材粒子之表面上之上述導電層之整體100重量%中上述金屬成分之含量為0.1重量%以上、30重量%以下。 The conductive particles according to claim 1 or 2, wherein the content of the metal component in the total 100% by weight of the conductive layer disposed on the surface of the substrate particle is 0.1% by weight or more and 30% by weight or less. 如請求項1或2之導電性粒子,其中配置於上述基材粒子之表面上之上述導電層之整體100重量%中上述金屬成分之含量超過5重量%且為30重量%以下。 The conductive particles according to claim 1 or 2, wherein the content of the metal component in the total 100% by weight of the conductive layer disposed on the surface of the substrate particle is more than 5% by weight and not more than 30% by weight. 如請求項1或2之導電性粒子,其中上述金屬成分含有鎢。 The conductive particle of claim 1 or 2, wherein the metal component contains tungsten. 如請求項1或2之導電性粒子,其產生10%壓縮變形時之壓縮彈性模數為5000N/mm2 以上、15000N/mm2 以下。The conductive particles according to claim 1 or 2 have a compression elastic modulus of 10 N/cm 2 or more and 15,000 N/mm 2 or less when the compression deformation is 10%. 如請求項1或2之導電性粒子,其壓縮回復率為5%以上、70%以下。 The conductive particles according to claim 1 or 2 have a compression recovery ratio of 5% or more and 70% or less. 如請求項1或2之導電性粒子,其中上述金屬成分含有鉬。 The electroconductive particle of claim 1 or 2, wherein the metal component contains molybdenum. 如請求項1或2之導電性粒子,其中配置於上述基材粒子之表面上之上述導電層含有鎳及鉬,配置於上述基材粒子之表面上之上述導電層之整體100重量%中,鎳之含量為70重量%以上、99.9重量%以下,鉬之含量為0.1重量%以上、30重量%以下。 The conductive particles according to claim 1 or 2, wherein the conductive layer disposed on the surface of the substrate particle contains nickel and molybdenum, and is disposed on 100% by weight of the entire conductive layer on the surface of the substrate particle. The content of nickel is 70% by weight or more and 99.9% by weight or less, and the content of molybdenum is 0.1% by weight or more and 30% by weight or less. 如請求項1之導電性粒子,其5%壓縮時之壓縮彈性模數為7000N/mm2 以上,且以壓縮方向上壓縮前導電性粒子之粒徑的超過10%且25%以下而壓縮導電性粒子時,配置於上述基材粒子之表面上之上述導電層產生裂縫。The conductive particles according to claim 1 have a compression elastic modulus of 7,000 N/mm 2 or more at 5% compression, and compressively conductive in a range of more than 10% and 25% or less of the particle diameter of the conductive particles before compression in the compression direction. In the case of the particles, the conductive layer disposed on the surface of the substrate particles generates cracks. 如請求項1、2或10之導電性粒子,其中配置於上述基材粒子之表面上之上述導電層之厚度為0.05μm以上、0.5μm以下。The conductive particles according to claim 1, 2 or 10, wherein the conductive layer disposed on the surface of the substrate particle has a thickness of 0.05 μm or more and 0.5 μm or less. 如請求項1、2或10之導電性粒子,其中配置於上述基材粒子之表面上之上述導電層於外表面具有突起。The conductive particles of claim 1, 2 or 10, wherein the conductive layer disposed on a surface of the substrate particle has a protrusion on an outer surface. 一種導電材料,其含有如請求項1至12中任一項之導電性粒子、及黏合劑樹脂;於上述導電材料100重量%中,上述黏合劑樹脂之含量為10重量%以上,99.99重量%以下。 A conductive material comprising the conductive particles according to any one of claims 1 to 12, and a binder resin; wherein the content of the binder resin is 10% by weight or more and 99.99% by weight based on 100% by weight of the conductive material; the following. 一種連接構造體,其包含第1連接對象構件、第2連接對 象構件及連接上述第1、第2連接對象構件之連接部,上述連接部係藉由如請求項1至12中任一項之導電性粒子而形成,或者藉由含有上述導電性粒子及黏合劑樹脂之導電材料而形成。A connection structure including a first connection object member and a second connection pair The image member and the connection portion connecting the first and second connection target members, wherein the connection portion is formed by the conductive particles according to any one of claims 1 to 12, or by containing the conductive particles and bonding Formed by a conductive material of the resin.
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