TWI506799B - Thin film photovoltaic module with contoured deairing substrate - Google Patents

Thin film photovoltaic module with contoured deairing substrate Download PDF

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TWI506799B
TWI506799B TW099108954A TW99108954A TWI506799B TW I506799 B TWI506799 B TW I506799B TW 099108954 A TW099108954 A TW 099108954A TW 99108954 A TW99108954 A TW 99108954A TW I506799 B TWI506799 B TW I506799B
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module
substrate
bus bar
directional
thin film
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TW201133883A (en
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Francois Andre Koran
Stephen Joseph Norton
Khanh Duc Tran
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Solutia Inc
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Description

具有輪廓化脫氣基板之薄膜光伏打模組Thin film photovoltaic module with contoured degassing substrate

本發明係在薄膜光伏打模組方面,且特定言之,本發明係在在適宜的薄膜光伏打基板上併入聚合體層及光伏打裝置之薄膜光伏打模組方面。The present invention relates to thin film photovoltaic modules, and in particular, the present invention relates to a thin film photovoltaic module in which a polymer layer and a photovoltaic device are incorporated on a suitable thin film photovoltaic substrate.

現今使用兩種常見的光伏打(太陽能)模組類型。第一種光伏打模組類型係利用半導體晶圓作為基板及第二種光伏打模組類型係利用沉積於適宜基板上之半導體薄膜。Two common types of photovoltaic (solar) modules are used today. The first type of photovoltaic module utilizes a semiconductor wafer as a substrate and a second type of photovoltaic module to utilize a semiconductor film deposited on a suitable substrate.

半導體晶圓類型之光伏打模組通常包括晶形矽晶圓(其通常用於多種固態電子裝置,如電腦記憶體晶片及電腦處理器中)。雖然此習知設計適用,但其製造相對昂貴且難以用於非標準應用中。Photovoltaic modules of the semiconductor wafer type typically include crystalline germanium wafers (which are commonly used in a variety of solid state electronic devices, such as computer memory chips and computer processors). While this conventional design is applicable, it is relatively expensive to manufacture and difficult to use in non-standard applications.

另一方面,薄膜光伏打可在適宜基板上併入一或多個習知半導體,如非晶形矽。不同於晶圓應用(晶圓係以複雜且精細的製造技術由鑄錠切割而成),薄膜光伏打係使用相當簡單的沉積技術(如濺射塗覆、物理氣相沉積(PVD)或化學氣相沉積(CVD))形成。Thin film photovoltaics, on the other hand, can incorporate one or more conventional semiconductors, such as amorphous germanium, on a suitable substrate. Unlike wafer applications (wafers are cut from ingots with complex and elaborate manufacturing techniques), thin-film photovoltaic systems use fairly simple deposition techniques such as sputter coating, physical vapor deposition (PVD) or chemistry. Vapor deposition (CVD) is formed.

雖然薄膜光伏打變得更適合作為晶圓光伏打之實際光伏打選項,但是技術上需改善效率、耐久性及製造費用。Although thin-film photovoltaics have become more suitable as a practical photovoltaic option for wafer photovoltaics, there is a need to improve efficiency, durability, and manufacturing costs.

一個在製造薄膜光伏打模組中已遇到之尤其持續性的問題係:當有匯流條存在時,通常以薄片形式提供之聚合體難以獲得一可接受的層壓。在製造期間該模組之匯流條區域無法恰當地脫氣而導致不可用的產品。A particularly persistent problem encountered in the manufacture of thin film photovoltaic modules is that it is difficult to obtain an acceptable lamination of a polymer that is typically provided in the form of a sheet when bus bars are present. The bus bar area of the module during manufacturing is not properly degassed resulting in a product that is not available.

因此,該技術需要用於生產易製造且安定的薄膜光伏打模組之改進方法及結構。Therefore, this technology requires an improved method and structure for producing a thin film photovoltaic module that is easy to manufacture and stable.

本發明提供一種具有一保護性基板(如玻璃)之薄膜光伏打模組,該基板已經輪廓化以界定可避免因該薄膜光伏打裝置上之匯流條而截留空氣之空間。該保護性基板之輪廓化明顯利於該模組之脫氣及層壓,因為其減少或消除層壓期間截留空氣之含量。The present invention provides a thin film photovoltaic module having a protective substrate (e.g., glass) that has been contoured to define a space that avoids trapping air due to bus bars on the thin film photovoltaic device. The contouring of the protective substrate is advantageous for degassing and lamination of the module as it reduces or eliminates trapped air content during lamination.

本發明之光伏打模組可以最小之由脫氣及相關層壓問題引起之損失處理。The photovoltaic module of the present invention can minimize the loss caused by degassing and associated lamination problems.

本發明薄膜光伏打裝置係利用具有一已由平板狀態修飾成一輪廓形成於上之表面之保護性基板,其中該輪廓係用於引導空氣遠離底層光伏打裝置之突出匯流條附近之截留點。The thin film photovoltaic device of the present invention utilizes a protective substrate having a surface that has been modified from a flat state to a contoured surface, wherein the contour is used to direct air away from the intercept point near the protruding bus bar of the underlying photovoltaic device.

薄膜光伏打模組之一般組態之示意代表圖係一般以10顯示於圖1中。如圖1中所示,一薄膜光伏打裝置14係形成在一基底基板12(其可係(例如)玻璃或塑料)上。一保護性基板18係連接至具有一聚合體層16之該光伏打裝置14。如下更詳細描述般,該聚合體層16可包括任何適宜的聚合物。A schematic representation of the general configuration of a thin film photovoltaic module is generally shown at 10 in FIG. As shown in FIG. 1, a thin film photovoltaic device 14 is formed on a base substrate 12 (which may be, for example, glass or plastic). A protective substrate 18 is attached to the photovoltaic device 14 having a polymer layer 16. As described in more detail below, the polymer layer 16 can comprise any suitable polymer.

提供可接受地密封該光伏打模組之聚合體層之先前嘗試已包括:使用具有相對高流速之聚合體材料、使用相對較厚的聚合物片、使用較高的層壓壓力及溫度及增加總層壓時間。然而,彼等解決方案各存在缺點。本發明之輪廓化基板克服層壓脫氣之問題。Previous attempts to provide an acceptable sealing of the polymer layer of the photovoltaic module have included the use of polymeric materials having relatively high flow rates, the use of relatively thick polymer sheets, the use of higher lamination pressures and temperatures, and the addition of total Lamination time. However, their solutions have their own shortcomings. The contoured substrate of the present invention overcomes the problem of lamination degassing.

本文所用之「輪廓化」基板意指該基板之表面界定低於該基板之規則表面之圖案化凹陷者。對於一平面基板(如,例如平板玻璃面板)而言,輪廓化可包括槽、通道、穴或其他預定凹陷之形成。As used herein, "contoured" substrate means that the surface of the substrate defines a patterned recess below the regular surface of the substrate. For a planar substrate (e.g., a flat glass panel), the contouring can include the formation of grooves, channels, pockets, or other predetermined depressions.

本文所用之「定向凹陷」係任何在層壓期間用於引導匯流條周圍之空氣進而減少或避免在層壓中形成氣泡之凹陷。本文所用之定向凹陷係可藉由直接穿過匯流條下方或上方或將空氣引離匯流條之路徑並進入匯流條間之空間來引導匯流條周圍之空氣。As used herein, "orientation depression" is any depression used to direct air around the bus bar during lamination to reduce or avoid the formation of bubbles in the laminate. Orientation depressions as used herein may direct air around the bus bar by passing directly under or over the bus bar or by directing air away from the bus bar and into the space between the bus bars.

本發明之輪廓化不限於任何特定橫截面形狀,且可採用任何利於完整層壓該模組之組件的適宜形式。此外,輪廓可以任何適於所使用之特定光伏打裝置的方向定向以提供定向凹陷,且可(例如)以平行、對角線或垂直配置形成,且在該基板上可具有相同或不同的深度及形狀。The contouring of the present invention is not limited to any particular cross-sectional shape, and any suitable form of assembly that facilitates complete lamination of the module can be employed. Furthermore, the profile may be oriented in any direction suitable for the particular photovoltaic device used to provide directional depressions, and may be formed, for example, in a parallel, diagonal or vertical configuration, and may have the same or different depths on the substrate. And shape.

在多項實施例中,輪廓化可採用一或多種通過所有或部分該基板地形成之槽形式。以此方式,層壓本發明薄膜光伏打模組可大幅改進匯流條周圍之脫氣及密封,而不需要相對較厚的聚合體層、相對較長的層壓時間或相對較高的處理溫度及壓力。In various embodiments, the contouring may take the form of one or more grooves formed by all or part of the substrate. In this manner, laminating the thin film photovoltaic module of the present invention can substantially improve outgassing and sealing around the bus bar without the need for a relatively thick polymer layer, relatively long lamination time, or relatively high processing temperatures and pressure.

可以任何適宜方式形成本發明之輪廓化保護性基板。例如,在多項實施例中,除其他已熟知的技術(如噴砂處理及化學、水或雷射蝕刻)以外,尤其可藉由(例如)利用塗覆有金剛石之鑽頭研磨或藉由利用塗覆有石頭或金剛石之砂輪研磨來形成輪廓。The contoured protective substrate of the present invention can be formed in any suitable manner. For example, in various embodiments, in addition to other well-known techniques (such as sand blasting and chemical, water or laser etching), in particular, by, for example, grinding with a diamond-coated drill bit or by utilizing a coating A stone or diamond wheel is ground to form a contour.

輪廓可以形成直線凹陷之簡單圖案或包括任何所需輪廓組合之較複雜圖案之任何適宜圖案形成。The profile may form a simple pattern of linear depressions or any suitable patterning of more complex patterns including any desired combination of contours.

輪廓可根據應用以任何所需深度或寬度形成。在多項實施例中,輪廓具有0.0254至0.508毫米(0.001至0.020英吋)、自0.127至0.305毫米(0.005至0.012英吋)、自0.0254至0.229毫米(0.001至0.009英吋)或自0.0254至0.127毫米(0.001至0.005英吋)之深度。具有任何剛述及之深度之輪廓可具有任何下列寬度之任何組合:0.1至15毫米、0.2至10毫米或3至6毫米。The profile can be formed in any desired depth or width depending on the application. In various embodiments, the profile has from 0.0254 to 0.508 millimeters (0.001 to 0.020 inches), from 0.127 to 0.305 millimeters (0.005 to 0.012 inches), from 0.0254 to 0.229 millimeters (0.001 to 0.009 inches), or from 0.0254 to 0.127. Depth of millimeters (0.001 to 0.005 inches). The profile having any depth as just described may have any combination of any of the following widths: 0.1 to 15 mm, 0.2 to 10 mm, or 3 to 6 mm.

在多項本發明實施例中,基板側邊與已經輪廓化之聚合體層接觸的表面積百分比可係0.01至70%、0.025至50%或0.1至30%。在多項實施例中,基板側邊與已經輪廓化之聚合體層接觸之表面積百分比可係0.5至70%、1至70%、3至70%、5至70%、10至70%或20至70%。In various embodiments of the invention, the percentage of surface area of the substrate side in contact with the already contoured polymeric layer may be from 0.01 to 70%, from 0.025 to 50%, or from 0.1 to 30%. In various embodiments, the percentage of surface area of the substrate side in contact with the already contoured polymer layer can be from 0.5 to 70%, from 1 to 70%, from 3 to 70%, from 5 to 70%, from 10 to 70%, or from 20 to 70. %.

在多項實施例中,該輪廓化之量係以置於輪廓上之總匯流條長度之百分比量得,不考慮該等輪廓延伸超過該匯流條之長度。在多項實施例中,總匯流條長度中置於輪廓上之部分係佔總匯流條長度之0.1至70%、0.2至50%或0.4至30%。在多項實施例中,總匯流條長度中置於輪廓上之部分係佔總匯流條長度之0.5至70%、1至70%、3至70%、5至70%、10至70%或20至70%。In various embodiments, the amount of contouring is measured as a percentage of the total bus bar length placed on the contour, regardless of whether the contour extends beyond the length of the bus bar. In various embodiments, the portion of the total bus bar length that is placed on the contour is 0.1 to 70%, 0.2 to 50%, or 0.4 to 30% of the total bus bar length. In various embodiments, the portion of the total bus bar length that is placed on the contour is 0.5 to 70%, 1 to 70%, 3 to 70%, 5 to 70%, 10 to 70%, or 20% of the total bus bar length. Up to 70%.

對於任何既定基板而言,可提供任何輪廓組合,包括具有不同剖面及深度之輪廓。可在一或兩塊基板上形成輪廓。For any given substrate, any combination of profiles can be provided, including profiles with different profiles and depths. A profile can be formed on one or two substrates.

在多項本發明實施例中,所用聚合體層之厚度可少於2.29毫米(0.090英吋)、1.143毫米(0.045英吋)、0.762毫米(0.030英吋)或0.381毫米(0.015英吋)。在其他實施例中(且尤其係軋輥非高壓釜方法中)可使用具有少於0.508毫米(0.020英吋)之厚度或在0.254與0.508毫米(0.010英吋與0.020英吋)間之厚度的聚合體層,其一般不係習知應用(其中使用此薄層將無法成功層壓)之情況。In various embodiments of the invention, the thickness of the polymeric layer used may be less than 2.29 millimeters (0.090 inches), 1.143 millimeters (0.045 inches), 0.762 millimeters (0.030 inches), or 0.381 millimeters (0.015 inches). In other embodiments (and especially in the roll non-autoclave process) polymerizations having a thickness of less than 0.508 mm (0.020 inch) or a thickness between 0.254 and 0.508 mm (0.010 inch and 0.020 inch) may be used. The bulk layer, which is generally not the case for conventional applications where the use of this thin layer will not be successfully laminated.

在其他本發明實施例中,本發明之輪廓化基板係用於使用真空脫氣,例如在使用高壓釜及不使用高壓釜之情況下進行真空環及真空包脫氣之層壓製程中。在此等實施例中(不同於軋輥實施例),空氣係自中心點放射狀地自層壓物移除,且因此必須由該匯流條之不同部分周圍抽出。In other embodiments of the invention, the contoured substrate of the present invention is used in a vacuum degassing process, such as in a laminating process using vacuum autoclaves and vacuum degassing without the use of an autoclave. In these embodiments (unlike the roll embodiment), the air system is radially removed from the laminate from the center point and must therefore be drawn around the different portions of the bus bar.

基底基板Base substrate

本發明之基底基板(在圖1中係顯示為元件12)可係任何可形成本發明光伏打裝置於上的適宜基板。實例包括(但不限於)玻璃及產生「堅硬」薄膜模組之堅硬塑料上釉材料及產生「可撓性」薄膜模組之薄塑料膜(如聚(對苯二甲酸乙二酯)、聚醯亞胺、氟聚合物及其類似物)。一般較佳係基底基板可透射大部分在350至1,200奈米範圍內之入射輻射,但是熟習此項技術者將瞭解:變化係可能的,包括光通過該保護性基板進入該光伏打裝置之變化。The base substrate of the present invention (shown as element 12 in Figure 1) can be any suitable substrate on which the photovoltaic device of the present invention can be formed. Examples include, but are not limited to, glass and hard plastic glazing materials that produce "hard" film modules and thin plastic films that produce "flexible" film modules (such as poly(ethylene terephthalate), poly Yttrium imine, fluoropolymer and the like). It is generally preferred that the base substrate can transmit most of the incident radiation in the range of 350 to 1,200 nanometers, but those skilled in the art will appreciate that variations are possible, including changes in the light entering the photovoltaic device through the protective substrate. .

薄膜光伏打裝置Thin film photovoltaic device

本發明之薄膜光伏打裝置(在圖1中係顯示為元件14)係直接形成於該基底基板上。典型的裝置製造法涉及沉積第一導電層、蝕刻該第一導電層、沉積並蝕刻半導體層、沉積第二導電層、蝕刻該第二導電層及應用匯流排導體及保護層(其取決於該應用)。一電絕緣層可視情況形成於該基底基板上該第一導電層與該基底基板之間。此可選層可係(例如)矽層。The thin film photovoltaic device of the present invention (shown as element 14 in Figure 1) is formed directly on the base substrate. A typical device fabrication method involves depositing a first conductive layer, etching the first conductive layer, depositing and etching a semiconductor layer, depositing a second conductive layer, etching the second conductive layer, and applying a busbar conductor and a protective layer (depending on the application). An electrically insulating layer may be formed between the first conductive layer and the base substrate on the base substrate. This optional layer can be, for example, a layer of germanium.

熟習此項技術者將瞭解:前述之裝置製造法僅係一種已知方法且僅係一項本發明實施例。多種其他類型之薄膜光伏打裝置係在本發明範圍之內。形成方法及裝置之實例包括彼等描述於美國專利文獻2003/0180983、7,074,641、6,455,347、6,500,690、2006/0005874、2007/0235073、7,271,333及2002/0034645者,其相關製造法及裝置部分之全文係以引用的方式併入本文中。Those skilled in the art will appreciate that the foregoing device fabrication methods are merely one known method and are merely one embodiment of the invention. A variety of other types of thin film photovoltaic devices are within the scope of the invention. Examples of methods and apparatus for forming include those described in U.S. Patent Nos. 2003/0180983, 7,074,641, 6,455,347, 6,500,690, 2006/0005874, 2007/0235073, 7,271,333, and 2002/0034645, the entire disclosure of which is incorporated herein by reference. The manner of reference is incorporated herein.

該薄膜光伏打裝置之多種組件可經由任何適宜方法形成。在多項實施例中,可使用化學氣相沉積(CVD)、物理氣相沉積(PVD)及/或濺射。The various components of the thin film photovoltaic device can be formed by any suitable method. In various embodiments, chemical vapor deposition (CVD), physical vapor deposition (PVD), and/or sputtering can be used.

上述兩個導電層係用作電極以攜帶藉由插入之半導體材料所產生之電流。該等電極中之一者通常係透明的以允許太陽能輻射到達該半導體材料。當然,兩個導體可皆透明,或該導體中之一者可係反射性而導致通過該半導體材料的光反射回至該半導體材料。導電層可包括任何適宜的導電氧化物材料,如氧化錫或氧化鋅,或如果透明性不重要,如對於「黑色」電極而言,則可使用金屬或金屬合金層(如彼等包含鋁或銀者)。在其他實施例中,一金屬氧化物層可與該金屬層組合以形成一電極,且該金屬氧化物層可經硼或鋁摻雜並使用低壓化學氣相沉積法沉積。該導電層之厚度可係(例如)0.1至10微米。The two conductive layers are used as electrodes to carry current generated by the inserted semiconductor material. One of the electrodes is typically transparent to allow solar radiation to reach the semiconductor material. Of course, both conductors may be transparent, or one of the conductors may be reflective to cause light reflected by the semiconductor material to be reflected back to the semiconductor material. The conductive layer may comprise any suitable conductive oxide material, such as tin oxide or zinc oxide, or if transparency is not critical, such as for "black" electrodes, metal or metal alloy layers may be used (if they contain aluminum or Silver). In other embodiments, a metal oxide layer can be combined with the metal layer to form an electrode, and the metal oxide layer can be doped with boron or aluminum and deposited using low pressure chemical vapor deposition. The thickness of the conductive layer can be, for example, 0.1 to 10 microns.

該薄膜光伏打裝置之光伏打區域可包含(例如)呈習知的PIN或PN結構之氫化非晶形矽。該矽之厚度通常至多可達約500奈米,通常包含一厚度為3至25奈米之p-層、一20至450奈米之i-層及一20至40奈米之n-層。沉積可藉由在矽烷或在矽烷與氫氣之混合物中放電,如(例如)美國專利第4,064,521號中所述般進行。The photovoltaic cell region of the thin film photovoltaic device can comprise, for example, a hydrogenated amorphous germanium of the conventional PIN or PN structure. The crucible typically has a thickness of up to about 500 nanometers and typically comprises a p-layer having a thickness of from 3 to 25 nanometers, an i-layer of from 20 to 450 nanometers, and an n-layer of from 20 to 40 nanometers. The deposition can be carried out by argon or in a mixture of decane and hydrogen, as described in, for example, U.S. Patent No. 4,064,521.

或者,該半導體材料可係微晶形矽、碲化鎘(CdTe或CdS/CdTe)、二硒化銅銦(CuInSe2 或「CIS」、或CdS/CuInSe2 )、硒化銅銦鎵(CuInGaSe2 或「CIGS」)或其他光伏打活性材料。本發明之光伏打裝置可具有額外半導體層或前述半導體類型之組合,且可係串接、三接點或雜接點結構。Alternatively, the semiconductor material may be microcrystalline, cadmium telluride (CdTe or CdS/CdTe), copper indium diselenide (CuInSe 2 or "CIS", or CdS/CuInSe 2 ), copper indium gallium selenide (CuInGaSe) 2 or "CIGS" or other photovoltaic active materials. The photovoltaic device of the present invention may have an additional semiconductor layer or a combination of the foregoing semiconductor types and may be a series, triple junction or hybrid contact structure.

可使用任何習知半導體製造技術(其包括但不限於:以光阻遮罩進行絲網印刷、用正或負光阻進行蝕刻、機械雕繪、放電雕繪、化學蝕刻或雷射蝕刻)進行該等層之蝕刻以形成該裝置之個別組件。該等多個層之蝕刻通常將導致個別光電池形成於該裝置內。此等光電池可使用在製造過程中之任何適宜階段插入或形成之匯流條彼此電連接。Any of the well-known semiconductor fabrication techniques (including but not limited to: screen printing with a photoresist mask, etching with positive or negative photoresist, mechanical engraving, discharge etching, chemical etching, or laser etching) can be used. The layers are etched to form individual components of the device. Etching of the plurality of layers will typically result in individual photovoltaic cells being formed within the device. Such photovoltaic cells can be electrically connected to one another using bus bars that are inserted or formed at any suitable stage in the manufacturing process.

可視情況在該光電池上形成一保護性層,再與該聚合體層及保護性基板組合。該保護性層可係(例如)經濺射的鋁。A protective layer may be formed on the photovoltaic cell, optionally in combination with the polymeric layer and the protective substrate. The protective layer can be, for example, sputtered aluminum.

自該選用絕緣層所形成之電互連光電池、該導電層、該半導體層及該選用的保護性層形成本發明之光伏打裝置。The photovoltaic cell of the present invention is formed from the electrically interconnected photovoltaic cell formed from the optional insulating layer, the conductive layer, the semiconductor layer and the optional protective layer.

聚合體層Polymer layer

任何適宜的熱塑性塑料可用於本發明之聚合體層中,包括聚(乙烯縮丁醛)、非塑化聚(乙烯縮丁醛)、聚胺基甲酸酯、聚(乙烯-共-醋酸乙烯酯)、熱塑性聚胺基甲酸酯、聚乙烯、聚烯烴、聚(氯乙烯)、聚矽氧、聚(乙烯-共-丙烯酸乙烯酯)、部分中和的乙烯/(甲基)丙烯酸共聚物之離聚物(如購自DuPont之)、聚乙烯共聚物、經乙二醇修飾之聚乙烯(PETG)或任何其他適宜的聚合物材料。在多項實施例中,該聚合物包括聚(乙烯-共-醋酸乙烯酯)(EVA)或部分中和的乙烯/(甲基)丙烯酸共聚物之離聚物。Any suitable thermoplastic can be used in the polymer layer of the present invention, including poly(vinyl butyral), non-plasticized poly(vinyl butyral), polyurethane, poly(ethylene-co-vinyl acetate) ), thermoplastic polyurethane, polyethylene, polyolefin, poly(vinyl chloride), polyfluorene oxide, poly(ethylene-co-vinyl acrylate), partially neutralized ethylene/(meth)acrylic acid copolymer Ionomer (as purchased from DuPont) ), a polyethylene copolymer, polyethylene modified polyethylene (PETG) or any other suitable polymeric material. In various embodiments, the polymer comprises an ionomer of poly(ethylene-co-vinyl acetate) (EVA) or a partially neutralized ethylene/(meth)acrylic copolymer.

在多項實施例中,聚(乙烯縮丁醛)可具有至少30,000、40,000、50,000、55,000、60,000、65,000、70,000、120,000、250,000或至少350,000克/莫耳(g/mol或道爾頓(Dalton))之分子量。在縮醛步驟期間亦可添加少量之二醛或三醛以增加分子量至至少350 g/mol(參見(例如)美國專利4,902,464、4,874,814、4,814,529及4,654,179)。本文所用之術語「分子量」意指重量平均分子量。In various embodiments, the poly(vinyl butyral) can have at least 30,000, 40,000, 50,000, 55,000, 60,000, 65,000, 70,000, 120,000, 250,000, or at least 350,000 grams per mole (g/mol or Dalton (Dalton) ))) The molecular weight. A small amount of dialdehyde or trialdehyde may also be added during the acetal step to increase the molecular weight to at least 350 g/mol (see, for example, U.S. Patents 4,902,464, 4,874,814, 4,814,529 and 4,654,179). The term "molecular weight" as used herein means the weight average molecular weight.

本發明之聚(乙烯縮丁醛)層可包括低分子量環氧樹脂添加劑。任何適宜的環氧樹脂試劑可用於本發明中,如為該技術已知者(參見(例如)美國專利5,529,848及5,529,849)。The poly(vinyl butyral) layer of the present invention may comprise a low molecular weight epoxy resin additive. Any suitable epoxy resin reagents can be used in the present invention, as is known in the art (see, for example, U.S. Patent Nos. 5,529,848 and 5,529,849).

在多項實施例中,發現如下文描述可使用之環氧樹脂組合物係選自以下各者:(a)主要包含雙酚-A之單體二縮水甘油醚之環氧樹脂;(b)主要包含雙酚-F之單體二縮水甘油醚之環氧樹脂;(c)主要包含雙酚-A之氫化二縮水甘油醚之環氧樹脂;(d)聚環氧化酚酚醛清漆;(e)聚乙二醇之二環氧化物或已知為一環氧基封端之聚醚;及(f)任何前述(a)至(e)之環氧樹脂的混合物(參見Encyclopedia of Polymer Science and Technology,第6卷,1967,Interscience Publishers,紐約,第209至271頁)。In various embodiments, it has been found that epoxy resin compositions that can be used as described below are selected from the group consisting of: (a) an epoxy resin comprising predominantly bisphenol-A monomer diglycidyl ether; (b) An epoxy resin comprising a bisphenol-F monomer diglycidyl ether; (c) an epoxy resin mainly comprising bisphenol-A hydrogenated diglycidyl ether; (d) a polyepoxidized phenol novolac; (e) a diepoxide of polyethylene glycol or a polyether known as an epoxy-terminated; and (f) a mixture of any of the foregoing (a) to (e) epoxy resins (see Encyclopedia of Polymer Science and Technology) , Vol. 6, 1967, Interscience Publishers, New York, pp. 209-271).

環氧樹脂試劑可以任何適宜量併入聚(乙烯縮丁醛)層中。在多項實施例中,環氧樹脂試劑係以0.5至15 phr、1至10 phr或2至3 phr(每百份樹脂之份數)併入。此等量可應用在任何以上所列之個別環氧樹脂試劑,及尤其係彼等式I所示者中並應用於本文所述環氧樹脂試劑之混合物的總量中。The epoxy resin reagent can be incorporated into the poly(vinyl butyral) layer in any suitable amount. In various embodiments, the epoxy resin reagent is incorporated at 0.5 to 15 phr, 1 to 10 phr, or 2 to 3 phr (parts per hundred resin). Such amounts can be applied to any of the individual epoxy resin agents listed above, and especially to those of Formula I, and to the total amount of the mixture of epoxy resin agents described herein.

黏著性控制劑(ACA)亦可用於本發明之聚合體層中且包括彼等揭示於美國專利第5,728,472中者。此外,剩餘醋酸鈉及/或醋酸鉀可藉由改變酸中和中相關氫氧化物之用量進行調節。在多項實施例中,本發明之聚合體層包括(除了醋酸鈉及/或醋酸鉀以外)雙(2-乙基丁酸)鎂(化學摘要(chemical abstracts)編號79992-76-0)。該鎂鹽之含量可以有效控制該聚合體層之黏著性。Adhesion control agents (ACA) can also be used in the polymeric layers of the present invention and include those disclosed in U.S. Patent No. 5,728,472. Further, the remaining sodium acetate and/or potassium acetate can be adjusted by changing the amount of the relevant hydroxide in the acid neutralization. In various embodiments, the polymeric layers of the present invention comprise (in addition to sodium acetate and/or potassium acetate) bis(2-ethylbutyrate)magnesium (chemical abstracts number 79992-76-0). The content of the magnesium salt can effectively control the adhesion of the polymer layer.

可藉由已知縮醛方法製備聚(乙烯縮丁醛),其涉及使聚(乙烯基醇)與丁醛在酸觸媒的存在下反應,接著中和該觸媒、分離、安定化及乾燥該樹脂。Poly(vinyl butyral) can be prepared by a known acetal process involving reacting poly(vinyl alcohol) with butyraldehyde in the presence of an acid catalyst, followed by neutralization of the catalyst, separation, stabilization and The resin was dried.

本文使用之「樹脂」意指已自酸催化產生之混合物中移出並隨後中和該聚合物前體之聚(乙烯縮丁醛)組分。除聚(乙烯縮丁醛)以外,樹脂一般具有其他組分,如醋酸酯類、鹽類及醇類。As used herein, "resin" means a poly(vinyl butyral) component that has been removed from the acid catalyzed mixture and subsequently neutralized the polymer precursor. In addition to poly(vinyl butyral), the resin generally has other components such as acetates, salts, and alcohols.

製備聚(乙烯縮丁醛)樹脂之適宜方法的細節係為熟習此項技術者已知(參見(例如)美國專利第2,282,057及2,282,026號)。在一項實施例中,可使用描述於B.E. Wade之Vinyl Acetal Polymers,於Encyclopedia of Polymer Science & Technology,第三版,第8卷,第381至399頁(2003)中之溶劑方法。在另一項實施例中,可使用其中所描述之水化法。聚(乙烯縮丁醛)可以多種形式由(例如)Solutia Inc.,St. Louis,Missouri以ButvarTM 樹脂購得。Details of suitable methods for preparing poly(vinyl butyral) resins are known to those skilled in the art (see, for example, U.S. Patent Nos. 2,282,057 and 2,282,026). In one embodiment, the solvent method described in Vin Wings of Vinyl Acetal Polymers, Encyclopedia of Polymer Science & Technology, Third Edition, Volume 8, pages 381 to 399 (2003) can be used. In another embodiment, the hydration process described therein can be used. Poly (vinyl butyral) can be made in various forms (e.g.) Solutia Inc., St. Louis, Missouri to Butvar TM resins are commercially available.

本文使用之術語「分子量」意指重量平均分子量。The term "molecular weight" as used herein means the weight average molecular weight.

可將任何適宜的增塑劑添加至本發明之聚(乙烯縮丁醛)樹脂中以形成該聚(乙烯縮丁醛)層。用於本發明之聚(乙烯縮丁醛)層之增塑劑尤其可包括多元酸或多元醇之酯類。適宜的增塑劑包括(例如):三乙二醇二-(2-乙基丁酸酯)、三乙二醇二-(2-乙基己酸酯)、三乙二醇二庚酸酯、四乙二醇二庚酸酯、己二酸二己酯、己二酸二辛酯、環己基己二酸己酯、己二酸庚酯及壬酯之混合物、己二酸二異壬酯、己二酸庚基壬酯、癸二酸二丁酯,聚合體增塑劑(如經油改質之癸二酸醇酸樹脂)、磷酸酯及己二酸酯之混合物(如彼等揭示於美國專利第3,841,890號中者)及己二酸酯(如彼等揭示於美國專利第4,144,217號中者)及上述物質之混合物及組合。其他可使用之增塑劑係由C4 至C9 烷基醇類及環C4 至C10 醇類(如揭示於美國專利第5,013,779號者)及C6 至C8 己二酸酯類(如己二酸己酯)製得之混合己二酸酯。在較佳實施例中,該增塑劑係三乙二醇二-(2-乙基己酸酯)。Any suitable plasticizer may be added to the poly(vinyl butyral) resin of the present invention to form the poly(vinyl butyral) layer. The plasticizer used in the poly(vinyl butyral) layer of the present invention may especially include polybasic acids or esters of polyhydric alcohols. Suitable plasticizers include, for example: triethylene glycol di-(2-ethylbutyrate), triethylene glycol di-(2-ethylhexanoate), triethylene glycol diheptanoate , tetraethylene glycol diheptanoate, dihexyl adipate, dioctyl adipate, hexyl cyclohexane adipate, a mixture of heptyl adipate and decyl ester, diisononyl adipate , heptanoate adipate, dibutyl sebacate, polymer plasticizer (such as oil-modified azelaic acid alkyd resin), a mixture of phosphate and adipate (as disclosed And U.S. Patent No. 3,841,890, the disclosure of which is incorporated herein by reference. Other plasticizers which may be used are C 4 to C 9 alkyl alcohols and ring C 4 to C 10 alcohols (as disclosed in U.S. Patent No. 5,013,779) and C 6 to C 8 adipates ( A mixed adipate prepared, such as hexyl adipate. In a preferred embodiment, the plasticizer is triethylene glycol di-(2-ethylhexanoate).

在某些實施例中,該增塑劑具有少於20個、少於15個、少於12個或少於10個碳原子之烴段。In certain embodiments, the plasticizer has a hydrocarbon segment of less than 20, less than 15, less than 12, or less than 10 carbon atoms.

可將添加劑併入該聚(乙烯縮丁醛)層中以增強其在最終產品中之性能。此等添加劑包括(但不限於):如該技術中已知之增塑劑、染料、顏料、安定劑(例如紫外線安定劑)、抗氧化劑、阻燃劑、其他IR吸收劑、UV吸收劑、抗結塊劑、上述添加劑之組合及類似物。Additives can be incorporated into the poly(vinyl butyral) layer to enhance its performance in the final product. Such additives include, but are not limited to, plasticizers, dyes, pigments, stabilizers (eg, UV stabilizers), antioxidants, flame retardants, other IR absorbers, UV absorbers, anti-allergies as are known in the art. An agglomerating agent, a combination of the above additives, and the like.

一種形成聚(乙烯縮丁醛)層之示範方法包括擠出包含樹脂、增塑劑及添加劑之熔融聚(乙烯縮丁醛)及隨後迫使該熔化物通過一板材壓模(例如,具有一維實質上大於垂線維之開口之壓模)。另一種形成聚(乙烯縮丁醛)層之示範方法包括自壓模澆鑄熔化物於輥上、固化該熔化物及隨後移除呈薄片形式之固化熔化物。An exemplary method of forming a poly(vinyl butyral) layer includes extruding molten poly(vinyl butyral) comprising a resin, a plasticizer, and an additive, and then forcing the melt through a sheet die (eg, having a dimension) a stamper that is substantially larger than the opening of the vertical dimension). Another exemplary method of forming a poly(vinyl butyral) layer includes casting a melt onto a roll from a die, curing the melt, and subsequently removing the solidified melt in the form of a sheet.

本文使用之「熔化物」意指一具有增塑劑及視情況選用之其他添加劑之樹脂混合物。在每項實施例中,可藉由調整該壓模開口之表面或藉於該輥表面上提供紋理控制該層任一側或兩側之表面紋理。其他用於控制該層紋理之技術包括改變該等材料之參數(例如,樹脂及/或增塑劑之水含量、熔化溫度、聚(乙烯縮丁醛)之分子量分佈或前述參數之組合)。此外,該層可經配置以包括界定臨時表面不規則性之間隔突出物以利該層在層壓期間脫氣,之後,該層壓製程之較高溫度及壓力使該等突出物熔入該層中,進而產生一光滑修整。As used herein, "melt" means a mixture of resins having a plasticizer and optionally other additives. In each of the embodiments, the surface texture of either or both sides of the layer can be controlled by adjusting the surface of the die opening or by providing texture on the surface of the roll. Other techniques for controlling the texture of the layer include altering the parameters of the materials (e.g., the water content of the resin and/or plasticizer, the melting temperature, the molecular weight distribution of the poly(vinyl butyral), or a combination of the foregoing parameters). Additionally, the layer can be configured to include spacer protrusions defining temporary surface irregularities to facilitate degassing of the layer during lamination, after which the higher temperature and pressure of the lamination process causes the protrusions to melt into the layer In the layer, a smooth finish is produced.

保護性基板Protective substrate

本發明之保護性基板(在圖中係顯示為元件18)可係任何如上所述可用來支撐該模組且可經處理以界定足夠尺寸之輪廓之適宜基板。實例包括(但不限於)玻璃及堅硬塑料。一般較佳係保護性基板可透射大部分在350至1200奈米範圍之入射輻射,但是熟習此項技術者將瞭解:變化係可能的,包括所有進入該光伏打裝置之光通過該基底基板進入的變化。在此等實施例中,該保護性基板不需要係透明的,或大多數情況如此,並可係(例如)一防止光通過該保護性基板而離開該光伏打模組之反射膜。The protective substrate of the present invention (shown as element 18 in the figures) can be any suitable substrate that can be used to support the module as described above and that can be processed to define a contour of sufficient size. Examples include, but are not limited to, glass and hard plastic. It is generally preferred that the protective substrate can transmit most of the incident radiation in the range of 350 to 1200 nm, but those skilled in the art will appreciate that variations are possible, including all light entering the photovoltaic device through the substrate. The change. In such embodiments, the protective substrate need not be transparent, or in most cases, and may, for example, be a reflective film that prevents light from exiting the photovoltaic module through the protective substrate.

組合件Assembly

本發明之薄膜光伏打模組之最終組合件涉及沉積一聚合體層以與已形成於基底基板上具有匯流條之薄膜光伏打裝置接觸,沉積一保護性基板以與該聚合體層接觸,及層壓該組合件以形成模組。The final assembly of the thin film photovoltaic module of the present invention involves depositing a polymer layer to contact a thin film photovoltaic device having a bus bar formed on a base substrate, depositing a protective substrate to contact the polymer layer, and laminating The assembly is formed to form a module.

在多項本發明實施例中,使用習知高壓釜層壓方法。在其他實施例中,使用非高壓釜方法,如軋輥或真空包或環方法。在一此種方法中,組裝後,將該等組件置於一真空包或環中,並在真空(如自0.7至0.97大氣壓)下脫氣達一適宜時間(例如0至60分鐘),及隨後升高溫度以在一溫度(例如70至150℃)下完成該模組。視情況,該模組可經熱壓處理以完成該模組。在多項較佳非高壓釜實施例中,聚合物水分含量係保持在相對低量,例如自0.1至0.35%。In a number of embodiments of the invention, conventional autoclave lamination methods are used. In other embodiments, a non-autoclave process, such as a roll or vacuum pack or loop process, is used. In one such method, after assembly, the components are placed in a vacuum bag or ring and degassed under vacuum (eg, from 0.7 to 0.97 atmospheres) for a suitable period of time (eg, 0 to 60 minutes), and The temperature is then raised to complete the module at a temperature (e.g., 70 to 150 °C). Optionally, the module can be hot pressed to complete the module. In a number of preferred non-autoclave embodiments, the polymer moisture content is maintained at a relatively low level, for example from 0.1 to 0.35%.

本發明之光伏打模組提供下列優點:允許使用非高壓釜方法,而具有極高產品可接受率。一種特定方法(軋輥非高壓釜方法)係描述於美國專利公開案2003/0148114A1中。當使用0.762毫米(30 mil)聚合物片層時,無本發明輪廓化玻璃之非高壓釜光伏打模組形成產生極高缺陷率之問題。具有輪廓化基板之本發明允許極佳脫氣,從而產生極低缺陷率。在多項本發明實施例中,可使用具有聚合物片(其具有如約0.254毫米(10 mil),例如自0.203至0.381毫米(8至15 mil)或自0.203至0.305毫米(8至12 mil)之厚度)之非高壓釜方法以高產率成功製備任何本文所描述之本發明光伏打模組。當然,以此等非高壓釜技術容易實現較厚層之層壓。The photovoltaic module of the present invention provides the advantage of allowing the use of a non-autoclave process with an extremely high product acceptability. One particular method (roller non-autoclave method) is described in U.S. Patent Publication No. 2003/0148114 A1. When a 0.762 mm (30 mil) polymer sheet is used, the non-autoclave photovoltaic module without the contoured glass of the present invention creates a problem of extremely high defect rate. The present invention with a contoured substrate allows for excellent outgassing, resulting in very low defect rates. In various embodiments of the invention, it is possible to use a polymer sheet having a haze of about 0.254 mm (10 mil), for example from 0.203 to 0.381 mm (8 to 15 mil) or from 0.203 to 0.305 mm (8 to 12 mil). The non-autoclave process of the thickness) successfully prepares any of the photovoltaic modules of the invention described herein in high yield. Of course, such non-autoclave technology facilitates lamination of thicker layers.

除了應用至光伏打模組以外,本發明之輪廓化玻璃可有效地用於經加熱及層壓之具有匯流條的玻璃應用上,如具有除霜用之積體柵極之汽車後部除霜器。在諸如彼等之應用中,加熱元件之柵極通常連接至出現層壓困難,如彼等在光伏打模組製造中遇到者之凸起匯流條。In addition to application to photovoltaic modules, the contoured glass of the present invention can be effectively used in heated and laminated glass applications with bus bars, such as automotive rear defrosters with integrated gates for defrosting . In applications such as those, the gates of the heating elements are typically connected to the difficulty of lamination, as they are encountered in the fabrication of photovoltaic modules.

本發明包括一種製造光伏打模組之方法,其包括以下步驟:提供一基底基板、形成一光伏打裝置於其上及使用一本發明聚合體層層壓該光伏打裝置至一本發明保護性輪廓化基板,其中該輪廓化基板具有提供一或多個匯流條周圍之定向凹陷的輪廓。The present invention includes a method of fabricating a photovoltaic module comprising the steps of: providing a substrate, forming a photovoltaic device thereon, and laminating the photovoltaic device to a protective profile of the present invention using a polymer layer of the present invention The substrate, wherein the contoured substrate has a profile that provides directional depressions around one or more bus bars.

藉由本發明,現可提供具有極佳物理安定性及低缺陷率處理之薄膜光伏打模組。With the present invention, a thin film photovoltaic module having excellent physical stability and low defect rate processing can be provided.

雖然已參考示範性實施例描述本發明,但熟習此項技術者應瞭解:在不偏離本發明範圍下可作多種改變並以等效物取代其元件。此外,在不偏離本發明基本範圍下,可作多種修飾以使特定情況或材料適合本發明之教示。因此,不欲將本發明限制在以欲用於進行本發明之最佳模式揭示之特定實施例,但是本發明將包括落於附屬請求項內之所有實施例。While the invention has been described with respect to the preferred embodiments of the embodiments of the invention In addition, many modifications may be made to adapt a particular situation or material to the teachings of the invention. Therefore, the present invention is not intended to be limited to the specific embodiments disclosed in the preferred embodiments of the invention.

另外應瞭解,任何本發明單一組件所提供之範圍、值或特徵皆可與本發明任何相容的其他組件所提供之範圍、值或特徵互相交換使用以形成一各組件具有如全文所提供之定義值之實施例。例如,該聚(乙烯縮丁醛)環氧化物之範圍及增塑劑範圍可經組合以形成多種在本發明範圍內但極難列舉之排列。It is also to be understood that any range, value or feature of any single component of the invention may be used interchangeably with the scope, values or features provided by any other component of the invention to form a component having the full An example of defining a value. For example, the range of poly(vinyl butyral) epoxides and the range of plasticizers can be combined to form a variety of arrangements that are within the scope of the invention but are extremely difficult to enumerate.

摘要中或任何請求項內所列之任何圖參考數字僅供說明目的且不應視為限制所主張發明在任何圖中所示之任一項特定實施例。Any reference figures in the abstract or in any of the claims are for illustrative purposes only and are not to be construed as limiting the invention.

除非另外註明,否則圖未按比例描繪。The figures are not drawn to scale unless otherwise noted.

各參考文獻(包括本文所引用之期刊文章、專利、申請案及書)之全文係以引用的方式併入本文中。The entire contents of each of the references, including the journal articles, patents, applications, and references cited herein, are hereby incorporated by reference.

10...薄膜光伏打模組10. . . Thin film photovoltaic module

12...基底基板12. . . Base substrate

14...薄膜光伏打裝置14. . . Thin film photovoltaic device

16...聚合體層16. . . Polymer layer

18...保護性基板18. . . Protective substrate

圖1表示一薄膜光伏打模組之橫截面示意圖。Figure 1 shows a schematic cross section of a thin film photovoltaic module.

10...薄膜光伏打模組10. . . Thin film photovoltaic module

12...基底基板12. . . Base substrate

14...薄膜光伏打裝置14. . . Thin film photovoltaic device

16...聚合體層16. . . Polymer layer

18...保護性基板18. . . Protective substrate

Claims (18)

一種薄膜光伏打模組,其包括:一基底基板;一置於與該基底基板接觸之薄膜光伏打裝置,其中該光伏打裝置包括一匯流條,其中該匯流條自該裝置表面突出;一置於與該光伏打裝置接觸之聚合體層;及一置於與該聚合體層接觸之保護性基板,其中該保護性基板係經輪廓化以便於該匯流條周圍提供一或多個定向凹陷,其中該置於與該聚合體層接觸之保護性基板的一側之20至70%之表面積係經輪廓化。 A thin film photovoltaic module comprising: a base substrate; a thin film photovoltaic device disposed in contact with the base substrate, wherein the photovoltaic device comprises a bus bar, wherein the bus bar protrudes from the surface of the device; a polymeric layer in contact with the photovoltaic device; and a protective substrate disposed in contact with the polymeric layer, wherein the protective substrate is contoured to provide one or more directional depressions around the bus bar, wherein The surface area of 20 to 70% of the side of the protective substrate placed in contact with the polymer layer is contoured. 如請求項1之模組,其中該基底基板及該保護性基板包括玻璃。 The module of claim 1, wherein the base substrate and the protective substrate comprise glass. 如請求項1之模組,其中該聚合體層包括聚(乙烯縮丁醛)。 The module of claim 1 wherein the polymer layer comprises poly(vinyl butyral). 如請求項1之模組,其中該匯流條包括一橫突出物且該一或多個定向凹陷係垂直於該橫突出物。 The module of claim 1, wherein the bus bar includes a lateral protrusion and the one or more directional depressions are perpendicular to the lateral protrusion. 如請求項4之模組,其中該匯流條包括一橫突出物且該一或多個定向凹陷係指向該橫突出物之側面。 The module of claim 4, wherein the bus bar includes a lateral projection and the one or more directional depressions are directed to a side of the lateral projection. 如請求項1之模組,其中該定向凹陷具有0.1至15毫米之寬度。 The module of claim 1, wherein the directional depression has a width of 0.1 to 15 mm. 如請求項1之模組,其中該定向凹陷具有3至6毫米之寬度。 The module of claim 1, wherein the directional depression has a width of 3 to 6 mm. 如請求項1之模組,其中該定向凹陷具有0.0254至0.508 毫米之深度。 The module of claim 1, wherein the directional depression has a value of 0.0254 to 0.508 The depth of millimeters. 如請求項1之模組,其中該定向凹陷具有0.0254至0.127毫米之深度。 The module of claim 1 wherein the directional depression has a depth of from 0.0254 to 0.127 millimeters. 一種製造一薄膜光伏打模組之方法,其包括:提供一基底基板;在該基底基板上形成一薄膜光伏打裝置,其中該光伏打裝置包括一匯流條,其中該匯流條由該裝置之表面突出;放置一聚合體層以與該光伏打裝置接觸;放置一保護性基板以與該聚合體層接觸,其中該保護性基板係經輪廓化以便於該匯流條周圍提供一或多個定向凹陷,其中該置於與該聚合體層接觸之保護性基板的一側之20至70%之表面積係經輪廓化;及以該裝置、該聚合體層及該保護性基板層壓該基底基板以形成該模組。 A method of manufacturing a thin film photovoltaic module, comprising: providing a base substrate; forming a thin film photovoltaic device on the base substrate, wherein the photovoltaic device comprises a bus bar, wherein the bus bar is surfaced by the device Projecting a polymer layer to contact the photovoltaic device; placing a protective substrate in contact with the polymer layer, wherein the protective substrate is contoured to provide one or more directional depressions around the bus bar, wherein 20 to 70% of the surface area of the side of the protective substrate placed in contact with the polymer layer is contoured; and the base substrate is laminated with the device, the polymer layer and the protective substrate to form the module . 如請求項10之方法,其中該基底基板及該保護性基板包括玻璃。 The method of claim 10, wherein the base substrate and the protective substrate comprise glass. 如請求項10之方法,其中該聚合體層包括聚(乙烯縮丁醛)。 The method of claim 10, wherein the polymer layer comprises poly(vinyl butyral). 如請求項10之方法,其中該匯流條包括一橫向突出物且該一或多個定向凹陷係垂直於該橫向突出物。 The method of claim 10, wherein the bus bar includes a lateral projection and the one or more directional depressions are perpendicular to the lateral projection. 如請求項13之方法,其中該匯流條包括一橫向突出物且該一或多個定向凹陷係指向該橫向突出物之側面。 The method of claim 13, wherein the bus bar includes a lateral projection and the one or more directional depressions are directed to a side of the lateral projection. 如請求項10之方法,其中該定向凹陷具有0.1至15毫米之 寬度。 The method of claim 10, wherein the directional depression has a thickness of 0.1 to 15 mm width. 如請求項10之方法,其中該定向凹陷具有3至6毫米之寬度。 The method of claim 10, wherein the directional depression has a width of 3 to 6 mm. 如請求項10之方法,其中該定向凹陷具有0.0254至0.508毫米之深度。 The method of claim 10, wherein the directional depression has a depth of from 0.0254 to 0.508 mm. 如請求項10之方法,其中該定向凹陷具有0.0254至0.127毫米之深度。The method of claim 10, wherein the directional depression has a depth of from 0.0254 to 0.127 millimeters.
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Citations (2)

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US20080083452A1 (en) * 2004-05-14 2008-04-10 Sony Corporation Photoelectric Converter, and Transparent Conductive Substrate for the same
TW200849627A (en) * 2007-05-17 2008-12-16 Day4 Energy Inc Photovoltaic cell with shallow emitter

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080083452A1 (en) * 2004-05-14 2008-04-10 Sony Corporation Photoelectric Converter, and Transparent Conductive Substrate for the same
TW200849627A (en) * 2007-05-17 2008-12-16 Day4 Energy Inc Photovoltaic cell with shallow emitter

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