TWI505320B - - Google Patents
Info
- Publication number
- TWI505320B TWI505320B TW103100720A TW103100720A TWI505320B TW I505320 B TWI505320 B TW I505320B TW 103100720 A TW103100720 A TW 103100720A TW 103100720 A TW103100720 A TW 103100720A TW I505320 B TWI505320 B TW I505320B
- Authority
- TW
- Taiwan
Links
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310009371.1A CN103928283B (en) | 2013-01-10 | 2013-01-10 | The method of the radio-frequency pulse power match of a kind of application of vacuum chamber and device thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201435964A TW201435964A (en) | 2014-09-16 |
| TWI505320B true TWI505320B (en) | 2015-10-21 |
Family
ID=51146465
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103100720A TW201435964A (en) | 2013-01-10 | 2014-01-08 | Method for matching radio frequency pulse power in vacuum processing chamber and its device |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103928283B (en) |
| TW (1) | TW201435964A (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106876239B (en) * | 2015-12-14 | 2018-10-16 | 中微半导体设备(上海)有限公司 | The impedance matching methods and device of pulsed radiofrequency plasma |
| US10009028B2 (en) * | 2016-09-30 | 2018-06-26 | Lam Research Corporation | Frequency and match tuning in one state and frequency tuning in the other state |
| CN109994354B (en) * | 2017-12-29 | 2021-07-13 | 中微半导体设备(上海)股份有限公司 | Plasma radio frequency adjusting method and plasma processing device |
| CN109994360B (en) * | 2017-12-29 | 2021-06-01 | 中微半导体设备(上海)股份有限公司 | Plasma radio frequency adjusting method and plasma processing device |
| CN110416047B (en) * | 2018-04-27 | 2021-03-02 | 北京北方华创微电子装备有限公司 | Radio frequency impedance matching method and device and semiconductor processing equipment |
| CN110504149B (en) | 2018-05-17 | 2022-04-22 | 北京北方华创微电子装备有限公司 | Pulse modulation system and method of radio frequency power supply |
| CN111293022B (en) * | 2018-12-07 | 2023-01-24 | 中微半导体设备(上海)股份有限公司 | Impedance matching method and device for pulsed radio frequency plasma |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200705567A (en) * | 2005-07-20 | 2007-02-01 | Taiwan Semiconductor Mfg Co Ltd | Method and apparatus for dynamic plasma treatment of bipolar ESC system |
| TW200831916A (en) * | 2006-09-20 | 2008-08-01 | Lam Res Corp | Methods of and apparatus for measuring and controlling wafer potential in pulsed RF bias processing |
| JP2008244274A (en) * | 2007-03-28 | 2008-10-09 | Tokyo Electron Ltd | Plasma processing apparatus |
| US20120312780A1 (en) * | 2006-12-29 | 2012-12-13 | Rajinder Dhindsa | Plasma-enhanced substrate processing method and apparatus |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2002363972A1 (en) * | 2001-11-21 | 2003-06-10 | The Regents Of The University Of California | Low temperature compatible wide-pressure-range plasma flow device |
| US20050112891A1 (en) * | 2003-10-21 | 2005-05-26 | David Johnson | Notch-free etching of high aspect SOI structures using a time division multiplex process and RF bias modulation |
| CN102420579A (en) * | 2011-11-16 | 2012-04-18 | 中微半导体设备(上海)有限公司 | Method and system for automatically realizing radio frequency power matching |
-
2013
- 2013-01-10 CN CN201310009371.1A patent/CN103928283B/en active Active
-
2014
- 2014-01-08 TW TW103100720A patent/TW201435964A/en unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200705567A (en) * | 2005-07-20 | 2007-02-01 | Taiwan Semiconductor Mfg Co Ltd | Method and apparatus for dynamic plasma treatment of bipolar ESC system |
| TW200831916A (en) * | 2006-09-20 | 2008-08-01 | Lam Res Corp | Methods of and apparatus for measuring and controlling wafer potential in pulsed RF bias processing |
| US20120312780A1 (en) * | 2006-12-29 | 2012-12-13 | Rajinder Dhindsa | Plasma-enhanced substrate processing method and apparatus |
| JP2008244274A (en) * | 2007-03-28 | 2008-10-09 | Tokyo Electron Ltd | Plasma processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103928283B (en) | 2016-06-15 |
| TW201435964A (en) | 2014-09-16 |
| CN103928283A (en) | 2014-07-16 |