CN109994354B - Plasma radio frequency adjusting method and plasma processing device - Google Patents
Plasma radio frequency adjusting method and plasma processing device Download PDFInfo
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- CN109994354B CN109994354B CN201711471826.6A CN201711471826A CN109994354B CN 109994354 B CN109994354 B CN 109994354B CN 201711471826 A CN201711471826 A CN 201711471826A CN 109994354 B CN109994354 B CN 109994354B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
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Abstract
The invention discloses a plasma radio frequency adjusting method and a plasma processing device, wherein the adjusting method is carried out through a radio frequency power generator, the radio frequency power generator comprises an automatic frequency modulation device, the radio frequency power generator outputs a radio frequency pulse periodic signal, a controller endows the radio frequency power generator with an ignition frequency at the beginning of each radio frequency pulse period and maintains the ignition frequency for a specific time period, a starting frequency is endowed to the automatic frequency modulation device after the specific time period of each radio frequency pulse period and an ending frequency is read at the end of each radio frequency pulse period, the ending frequency of each radio frequency pulse period is used as the starting frequency of the next radio frequency pulse period, and the starting frequency of the first radio frequency pulse period is a preset frequency. The method of the invention can quickly adjust the frequency and quickly find the radio frequency power corresponding to the minimum reflected power for the radio frequency pulse period.
Description
Technical Field
The present invention relates to a plasma rf adjusting method and a plasma processing apparatus, and more particularly, to a matching adjusting technique for supplying pulsed rf power to a plasma processing apparatus.
Background
In the existing semiconductor processing, plasma processing equipment is widely adopted to process a semiconductor substrate (wafer) so as to obtain a semiconductor device with a microscopic size and a conductor connection. Plasma devices, commonly known as Capacitively Coupled (CCP) and Inductively Coupled (ICP) reaction chambers, typically have two rf power supplies, one of which is used to ionize a reactant gas passing into the reaction chamber to produce a plasma, and the other of which is used to control the ion energy incident on the substrate surface.
At present, many plasma processing techniques require pulsed plasma processing, i.e., the rf power source in a part of the processing period is not continuously powered but alternately turned on and off or alternately turned on and off at high power and low power, and the waveform of the output power is pulsed, so that pulsed plasma processing is called. The pulse frequency of the pulse radio frequency signal is usually more than 100HZ, and the duty ratio of the pulse signal can be set within the range of 10% -90% according to needs. The impedance in the reaction cavity can be rapidly changed every time when the plasma is switched on or switched off or switched between high power and low power, and the time of each change is millisecond or even microsecond. Meanwhile, the impedance change in the reaction cavity is large in the time period from the ignition of the plasma to the stabilization of the plasma during the switching of high-power and low-power pulses, so that the radio frequency matching difficulty is large.
For the above reasons, there is a need in the art for a technique that can satisfy the requirement of fast switching of rf pulse cycles with high pulse frequency and achieve accurate matching.
Disclosure of Invention
In order to solve the above technical problem, the present invention provides a plasma rf tuning method, wherein the tuning method is performed by an rf power generator, the rf power generator includes an automatic frequency tuning device, and the tuning method includes the following steps: the radio frequency power generator outputs a pulse radio frequency signal; the automatic frequency modulation device carries out automatic frequency modulation at least twice in each radio frequency pulse period; giving the auto-frequency modulation device an ignition frequency at the beginning of each radio frequency pulse period, the time at which the plasma is ignited and reaches stability being a specific time period;
and giving a starting frequency to the automatic frequency modulation device after a specific time period of each radio frequency pulse period, reading an ending frequency when each radio frequency pulse period is ended, wherein the ending frequency of each radio frequency pulse period is used as the starting frequency of the next radio frequency pulse period, and the starting frequency of the first radio frequency pulse period is a preset frequency.
The pulse radio frequency signal comprises high-level power and low-level power, and the ignition frequencies of the high-level power and the low-level power can be the same or different.
Preferably, the specific period includes a high level specific period and a low level specific period, and the high level specific period and the low level specific period are the same.
Preferably, the specific time period includes a high level specific time period and a low level specific time period, and the high level specific time period and the low level specific time period are not the same.
Preferably, the ignition frequency is the same as the preset frequency
Preferably, the ignition frequency and the preset frequency are different.
Preferably, the auto-frequency-modulation device performs auto-frequency modulation with the ignition frequency as a starting frequency during a specific time period when the plasma is ignited and reaches a steady state.
Preferably, the auto-tuning device does not auto-tune during a specified period of time when the plasma is ignited and reaches a steady state.
Preferably, the ignition frequency is a frequency at which plasma ignition can be achieved.
Preferably, the preset frequency includes a high level preset frequency and a low level preset frequency, the high level preset frequency is a frequency corresponding to the minimum reflected power of the radio frequency power generator during continuous high power output, and the low level preset frequency is a frequency corresponding to the minimum reflected power of the radio frequency power generator during continuous low power output.
Preferably, the automatic frequency modulation method comprises: giving a preset frequency to the radio frequency power generator, correspondingly obtaining a first reflected power, adding a step length to the preset frequency to give the radio frequency power generator, correspondingly obtaining a second reflected power, comparing the first reflected power with the second reflected power, if the second reflected power is larger than the first reflected power, adding the step length to the opposite direction, if the second reflected power is smaller than the first reflected power, continuing adding two step lengths to the preset frequency to give the radio frequency power generator, and adjusting to obtain smaller reflected power.
Further, a controller acts on the rf power generator, which reads the end frequency of each rf pulse cycle and assigns it to the automatic frequency modulation device as the start frequency of the next rf pulse cycle.
Preferably, the preset frequency and the ignition frequency are assigned to the radio frequency power generator by the controller.
Preferably, the frequency modulation time of the automatic frequency modulation device is greater than or equal to 0.1 microsecond.
Preferably, the frequency modulation time of the automatic frequency modulation device is 1 microsecond.
Preferably, the frequency modulation time of the automatic frequency modulation device is 5 microseconds.
Preferably, the frequency modulation time of the automatic frequency modulation device is 10 microseconds.
Preferably, the frequency modulation time of the automatic frequency modulation device is 20 microseconds.
Preferably, the frequency modulation time of the automatic frequency modulation device is 30 microseconds.
Preferably, the pulsed radio frequency signal includes a high level power and a low level power, and the low level power is greater than or equal to 0.
Further, the pulsed rf signal further includes a third level power state, and the third level power state is between the high level power and the low level power.
Preferably, the pulse frequency of the radio frequency pulse periodic signal is greater than 100 Hz.
Preferably, the pulse frequency of the radio frequency pulse periodic signal is greater than 5000 hertz.
Further, the present invention also discloses a plasma processing apparatus, comprising:
a plasma processing chamber; for receiving and processing a substrate;
a radio frequency power generator applied to said plasma processing chamber for generating or conditioning a plasma;
the controller acts on the radio frequency power generator;
the radio frequency power generator comprises an automatic frequency modulation device; the automatic frequency modulation device carries out automatic frequency modulation at least twice in each radio frequency pulse period;
the controller gives an ignition frequency to the automatic frequency modulation device at the beginning of each radio frequency pulse period, and the time for the plasma to be ignited and reach the stability at the ignition frequency is a specific time period;
the controller gives a starting frequency to the automatic frequency modulation device after a specific time period of each radio frequency pulse period and reads an ending frequency when each radio frequency pulse period is ended, the ending frequency of each radio frequency pulse period is used as the starting frequency of the next radio frequency pulse period, and the starting frequency of the first radio frequency pulse period is a preset frequency.
Preferably, the pulsed radio frequency signal includes a high level power and a low level power, and the ignition frequencies of the high level power and the low level power may be the same or different.
Preferably, the specific period includes a high level specific period and a low level specific period, and the high level specific period and the low level specific period are the same.
Preferably, the specific time period includes a high level specific time period and a low level specific time period, and the high level specific time period and the low level specific time period are not the same.
Preferably, the ignition frequency is a frequency at which plasma ignition can be achieved.
Preferably, the preset frequency includes a high level preset frequency and a low level preset frequency, the high level preset frequency is a frequency corresponding to the minimum reflected power of the radio frequency power generator during continuous high power output, and the low level preset frequency is a frequency corresponding to the minimum reflected power of the radio frequency power generator during continuous low power output.
Preferably, the frequency modulation time of the automatic frequency modulation device is greater than or equal to 0.1 microsecond.
Preferably, the auto-frequency-modulation device performs auto-frequency modulation with the ignition frequency as a starting frequency during a specific time period when the plasma is ignited and reaches a steady state.
Preferably, the auto-tuning device does not auto-tune during a specified period of time when the plasma is ignited and reaches a steady state.
The invention discloses a plasma radio frequency adjusting method and a plasma processing device, which can quickly adjust the pulse output frequency of a radio frequency power generator under the condition of not changing a matcher by utilizing an automatic frequency adjusting device arranged in the radio frequency power generator, and can quickly find out the frequency corresponding to the minimum reflected power because the frequency of the automatic frequency adjusting device is changed without the adjustment of mechanical hardware, and the frequency adjusting time can be reduced to 0.1 microsecond. The frequency modulation method provided by the invention has a particularly obvious effect on adjusting high-frequency pulse signals. In addition, the present invention reassigns a starting frequency after a specified period of time during the plasma ignition phase by assigning two values to each of the high state or the low state of a radio frequency pulse cycle. Equivalently, the frequency modulation of the plasma ignition region of each radio frequency pulse period is stripped or frozen, so that the pulse frequency plasma assignment frequency modulation is realized in a real sense.
Drawings
Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments with reference to the following drawings:
FIG. 1 is a schematic view showing a structure of a plasma processing apparatus;
fig. 2 shows a frequency adjustment diagram.
Detailed Description
The radio frequency matching adjusting method disclosed by the invention is suitable for any plasma processing device needing to perform rapid radio frequency matching, such as a plasma etching processing device, wherein common plasma etching processing devices comprise a capacitive coupling plasma processing device and an inductive coupling plasma processing device, and for convenience of description, the capacitive coupling plasma processing device is taken as an example to describe the radio frequency matching adjusting method in detail in the following with reference to the attached drawings.
Fig. 1 discloses a capacitively coupled plasma processing apparatus, which includes a reaction chamber 100, wherein the reaction chamber includes a susceptor 22, and the susceptor includes a lower electrode therein. A substrate holding device such as an electrostatic chuck 21 to be processed is provided above the lower electrode, and a substrate 20 is held on the upper surface of the electrostatic chuck 21. An edge ring 10 is also included around the electrostatic chuck and substrate. The reaction chamber 100 further includes a gas shower head 11 disposed above and opposite to the susceptor, the gas shower head being connected to a gas source 110 for uniformly supplying gas into the reaction chamber. The gas shower head is used as an upper electrode and is opposite to a lower electrode in the base to form capacitive coupling. A first rf power generator 30 is electrically connected to the lower electrode through a matcher 1, and optionally, a second rf power generator 40 is electrically connected to the lower electrode through a matcher 2. The first rf power generator 30 and the second rf power generator 40 may output continuous rf signals or rf pulse periods. Each rf power generator is shipped with a calibrated frequency, however, since the impedance of the plasma changes with the changes of parameters such as the gas pressure in the plasma, the rf power, and the plasma concentration, the output frequency of the rf power generator needs to be continuously adjusted to obtain the minimum reflected power.
When the radio frequency power generator outputs a continuous and stable radio frequency signal, if other parameters in the reaction cavity are not changed, the matcher performs radio frequency matching on the continuous radio frequency signal within a certain time to obtain a radio frequency corresponding to the minimum reflected power, and instructs the radio frequency power generator to output the radio frequency corresponding to the minimum reflected power in the stable process.
When the radio frequency power generator outputs a pulse radio frequency signal, the radio frequency power applied to the reaction cavity is switched from a low level to a high level or from an on state to an off state, at the moment, the plasma environment in the reaction cavity is changed, and the radio frequency generating the minimum reflected power is also changed continuously. Particularly, when the pulse frequency of the pulse signal is greater than 100hz, the matcher is limited in that hardware conditions (such as a variable capacitance or a variable inductance of a mechanical drive) cannot be switched quickly, and cannot be matched with the switching of the pulse signal.
In the invention, the radio frequency power generator comprises an automatic frequency modulation device, and the automatic frequency modulation device can perform frequency modulation on the pulse radio frequency signal at least once in each radio frequency pulse period and search for the radio frequency corresponding to the minimum reflected power. In addition, the present invention includes a controller 50, wherein the controller 50 can read the frequency in the RF power generator and assign a certain frequency to the AFM.
Fig. 2 shows a frequency adjustment diagram in which a pulsed rf signal is emitted by an rf power generator, the pulsed rf signal including a high level power state and a low level power state. The low level power may be 0, i.e., the rf power generator generates an on-off rf signal, and in other embodiments, the low level power is greater than 0. In each radio frequency pulse period, the automatic frequency modulation device carries out automatic frequency modulation for multiple times, and the automatic frequency modulation method specifically comprises the following steps: the controller gives a preset frequency to the radio frequency power generator, correspondingly obtains a first reflected power, increases a step length of the preset frequency to the radio frequency power generator, correspondingly obtains a second reflected power, compares the first reflected power with the second reflected power, increases the step length in the opposite direction if the second reflected power is larger than the first reflected power, and continues to increase two step lengths of the preset frequency to the radio frequency power generator if the second reflected power is smaller than the first reflected power, thereby continuously obtaining smaller reflected power. The frequency modulation time of the automatic frequency modulation device is the time required for obtaining a reflected power by increasing one step, and the automatic frequency modulation time can be set to be greater than or equal to 0.1 microsecond, preferably 1 microsecond, 5 microseconds, 10 microseconds, 15 microseconds, 20 microseconds or 30 microseconds and the like.
Because the radio frequency power generator alternately outputs a high level power state and a low level power state, when the high level and the low level of each radio frequency pulse period are switched, the plasma in the reaction cavity needs to be ignited again, and the impedance in the reaction cavity changes violently and is extremely unstable in the plasma ignition process. Therefore, the reflected power obtained during the plasma ignition phase is of no reference no matter what frequency is assigned to the automatic frequency modulation device.
In the technical scheme of the invention, the controller respectively assigns the high level power state and the low level power state of each radio frequency pulse period at least twice. The controller endows the automatic frequency modulation device with an ignition frequency at the beginning of each radio frequency pulse period, and the time for the plasma to be ignited and reach stability at the ignition frequency is a specific time period; after a specific time period of each rf pulse cycle, the controller 50 assigns a start frequency to the automatic frequency modulation device and reads an end frequency at the end of each rf pulse cycle, where the end frequency of each rf pulse cycle is used as the start frequency of the next rf pulse cycle, and the start frequency of the first rf pulse cycle is a preset frequency. And in a specific time period when the plasma is ignited and reaches a stable state, the automatic frequency modulation device performs automatic frequency modulation by taking the ignition frequency as a starting frequency, or in a specific time period when the plasma is ignited and reaches a stable state, the automatic frequency modulation device does not perform automatic frequency modulation. Since at least two assignments are required for each rf pulse period, at least two automatic frequency modulations, preferably at least four automatic frequency modulations, are required for each rf pulse period.
Specifically, the automatic frequency modulation signal shown in fig. 2 is used for explanation, and at the starting time of each radio frequency pulse period, the controller gives an ignition frequency f under the assumption that the starting time is in a high level power statei(h) To the automatic frequency-modulation device at the ignition frequency fi(h) To start the auto-tuning of the frequency, the auto-tuning process is maintained for a specific time period T1, the specific time period T1 being the time at which the plasma is ignited at a high level of power, i.e., the time from ignition until the plasma is stabilized. In a further embodiment, the auto-tune device does not auto-tune for a particular time period T1 of the ignition. After the plasma reaches the steady state, i.e. at the end of the specific time period T1, the controller gives the automatic frequency modulation device a high-level preset frequency f0(h) As a start frequency, and obtaining a high-level end frequency f at the end of the high-level power state of the RF pulse period1(h) In that respect Then the high level power is switched to the low level power, and at the starting time of the low level power state, the controller gives an ignition frequency fi(l) To the automatic frequency-modulation device at the ignition frequency fi(l)To start the frequency auto-tuning, the auto-tuning process is maintained for a specific time period T2, the specific time period T2 being the time at which the plasma is ignited at a low level power state, i.e., the time from ignition until the plasma is stabilized. In a further embodiment, the auto-tune device does not auto-tune for a particular time period T1 of the ignition. After the plasma reaches the steady state, i.e. at the end of the specific time period T2, the controller gives the automatic frequency modulation device a low-level preset frequency f0(l) As a start frequency, and obtaining a low-level end frequency f at the end of the low-level power state of the RF pulse period1(l)。
At the beginning of the high state of the next RF pulse period, the controller continues to control the ignition frequency fi(h) Endowing the automatic frequency modulation device with a specific time period T1, and at the end time of the specific time period T1, the controller enables the high level end frequency f of the high level power state of the previous radio frequency pulse period1(h) Giving the automatic frequency modulation device as a start frequency for automatic frequency modulation, and obtaining a high-level end frequency f at the end of the high-level power state of the RF pulse period2(h) In that respect Similarly, the high level power output by the radio frequency power generator is switched to the low level power, and the controller gives an ignition frequency f at the starting moment of the low level power statei(l) To the automatic frequency-modulation device at the ignition frequency fi(l) Maintaining a specific time period T2, at the end of the specific time period T2, the controller will end the low-level frequency f of the low-level power state of the previous RF pulse period1(l) Giving the automatic frequency modulation device as a start frequency for automatic frequency modulation, and obtaining a low-level end frequency f at the end of the low-level power state of the RF pulse period2(l) In that respect The controller and the radio frequency power generator cooperate to repeat the frequency modulation step until a minimum reflected power is found.
By adopting the frequency modulation method, the output frequency of the radio frequency power generator can be quickly adjusted under the condition of not changing the matcher, and the frequency modulation time can be reduced to 1 microsecond or even 0.1 microsecond because the frequency change of the automatic frequency modulation device does not need to relate to the adjustment of mechanical hardware. For a 100hz pulse signal, assuming that the duty cycle of the pulse signal is 50%, the automatic frequency modulation device can modulate the frequency 5000 times within a radio frequency pulse period, taking the frequency modulation time as 1 microsecond as an example, and greatly improve the rate of finding the minimum reflected power. In addition, the invention assigns the high level state or the low level state of each radio frequency pulse period twice, and assigns a starting frequency again after a specific time period of a plasma ignition stage, which is equivalent to stripping or freezing the frequency modulation of the plasma ignition region of each radio frequency pulse period, thereby realizing the pulse frequency plasma assignment frequency modulation in the real sense.
The frequency modulation method has particularly obvious effect on regulating the high-frequency pulse signal, when the pulse frequency of the pulse radio-frequency signal reaches 5000 Hz, the high-low level switching rate of the radio-frequency signal is very quick, the time length of each radio-frequency pulse period is only 200 microseconds, the frequency modulation time of the automatic frequency modulation device is assumed to be 0.1 microsecond, the duty ratio of the pulse signal is 50 percent, and the automatic frequency modulation device can respectively carry out frequency search for 1000 times on the high-level frequency and the low-level frequency in each radio-frequency pulse period, so that the radio-frequency power corresponding to the minimum reflected power can be quickly found.
In the invention, the ignition frequencies of the high-level power state and the low-level power state of the radio frequency pulse period can be the same or different, and the frequency modulation of the automatic frequency modulation device in the plasma ignition stage has small significance on finding the adjustment process of the minimum reflected power, so that the selection range of the ignition frequency is large, but the ignition frequencies of the high-level power state and the low-level power state can realize the ignition of the plasma. In addition, the lengths of the specific time periods T1 and T2 for the high level power state and the low level power state depend on the time required for the plasma to ignite and reach a steady state in the two states, which is determined by the overall parameters in the reaction chamber, and T1 and T2 may or may not be the same.
There are various methods for determining the preset frequency after a specific time period of the first rf pulse period, and in principle, the preset frequency may be any frequency that can ensure plasma ignition. In a typical embodiment, since the rf power generator generally outputs the pulsed rf power after outputting the continuous rf power for a certain time, when adjusting the frequency corresponding to the minimum reflected power of the pulsed rf power, the preset frequency of the first rf pulse period may adopt the frequency corresponding to the minimum reflected power of the continuous rf output stage, and the frequency is given to the rf power generator through the controller 50.
Since the rf power source may include a high level power state and a low level power state, one method of determining the preset frequency of the high level power state is to set the rf power generator to output a continuous high level power state and obtain a frequency corresponding to the minimum reflected power, and one method of determining the preset frequency of the low level power state is to set the rf power generator to output a continuous low level power state and obtain a frequency corresponding to the minimum reflected power.
In addition to the high-low level power states disclosed in the present invention, there may be intermediate level power states between the high-low level power states, and the adjustment method thereof is consistent with the adjustment method of the high-level power state or the low-level power state described above, and will not be described herein again.
The frequency matching adjusting method can adjust in different radio frequency pulse periods without being limited to a single radio frequency pulse period, so that the rapid radio frequency matching of the pulse output of the radio frequency power source with high pulse frequency switching can be realized. In addition, the invention respectively carries out radio frequency matching adjustment on the high level power state and the low level power state, thereby reducing the problem of inaccurate radio frequency matching caused by large-range hopping of frequency.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (30)
1. A plasma rf tuning method, the tuning method performed by an rf power generator, the rf power generator including an auto-tuning device, the tuning method comprising the steps of:
the radio frequency power generator outputs a pulse radio frequency signal;
the automatic frequency modulation device carries out automatic frequency modulation at least twice in each radio frequency pulse period;
giving the auto-frequency modulation device an ignition frequency at the beginning of each radio frequency pulse period, the time at which the plasma is ignited and reaches stability being a specific time period;
giving a starting frequency to the automatic frequency modulation device after a specific time period of each radio frequency pulse cycle and reading an ending frequency when each radio frequency pulse cycle is ended, wherein the ending frequency of each radio frequency pulse cycle is used as the starting frequency of the next radio frequency pulse cycle, and the starting frequency of the first radio frequency pulse cycle is a preset frequency;
the automatic frequency modulation method comprises the following steps: giving a preset frequency to the radio frequency power generator, correspondingly obtaining a first reflected power, adding a step length to the preset frequency to give the radio frequency power generator, correspondingly obtaining a second reflected power, comparing the first reflected power with the second reflected power, if the second reflected power is larger than the first reflected power, adding the step length to the opposite direction, if the second reflected power is smaller than the first reflected power, continuing adding two step lengths to the preset frequency to give the radio frequency power generator, and adjusting to obtain smaller reflected power.
2. The method of claim 1, wherein the pulsed radio frequency signal comprises a high level power and a low level power, and the firing frequencies of the high level power and the low level power are the same or different.
3. The adjustment method according to claim 1, wherein the specific time period includes a high level specific time period and a low level specific time period, and the high level specific time period and the low level specific time period are the same.
4. The adjustment method according to claim 1, wherein the specific time period includes a high level specific time period and a low level specific time period, and the high level specific time period and the low level specific time period are not the same.
5. The regulation method according to claim 1, characterized in that the ignition frequency and the preset frequency are identical or different.
6. The method of conditioning according to claim 1, characterized in that: and in a specific time period when the plasma is ignited and reaches a stable state, the automatic frequency modulation device performs automatic frequency modulation by taking the ignition frequency as a starting frequency.
7. The method of conditioning according to claim 1, characterized in that: and in a specific time period when the plasma is ignited and reaches a stable state, the automatic frequency modulation device does not perform automatic frequency modulation.
8. The conditioning method of claim 1, wherein the ignition frequency is a frequency at which plasma ignition is achieved.
9. The adjusting method of claim 1, wherein the preset frequency comprises a high level preset frequency and a low level preset frequency, the high level preset frequency is a frequency corresponding to a minimum reflected power of the RF power generator during continuous high power output, and the low level preset frequency is a frequency corresponding to a minimum reflected power of the RF power generator during continuous low power output.
10. The method of conditioning according to claim 1, characterized in that: a controller acts on the rf power generator, which reads the end frequency of each rf pulse cycle and assigns it to the automatic frequency modulation device as the start frequency of the next rf pulse cycle.
11. The method of conditioning of claim 10, wherein: and the preset frequency and the ignition frequency are assigned to the radio frequency power generator through the controller.
12. The method of conditioning according to claim 1, characterized in that: the frequency modulation time of the automatic frequency modulation device is more than or equal to 0.1 microsecond.
13. The method of conditioning according to claim 12, characterized in that: the frequency modulation time of the automatic frequency modulation device is 1 microsecond.
14. The method of conditioning according to claim 12, characterized in that: the frequency modulation time of the automatic frequency modulation device is 5 microseconds.
15. The method of conditioning according to claim 12, characterized in that: the frequency modulation time of the automatic frequency modulation device is 10 microseconds.
16. The method of conditioning according to claim 12, characterized in that: the frequency modulation time of the automatic frequency modulation device is 20 microseconds.
17. The method of conditioning according to claim 12, characterized in that: the frequency modulation time of the automatic frequency modulation device is 30 microseconds.
18. The method of conditioning according to claim 1, characterized in that: the pulse radio frequency signal comprises high-level power and low-level power, and the low-level power is greater than or equal to 0.
19. The method of conditioning of claim 18, wherein: the pulsed radio frequency signal further comprises a third level power state, wherein the third level power state is between the high level power and the low level power.
20. The method of conditioning according to claim 1, characterized in that: the pulse frequency of the radio frequency pulse periodic signal is more than 100 Hz.
21. The method of conditioning according to claim 1, characterized in that: the pulse frequency of the radio frequency pulse periodic signal is more than 5000 Hz.
22. A plasma processing apparatus, characterized in that the apparatus comprises:
a plasma processing chamber; for receiving and processing a substrate;
a radio frequency power generator applied to said plasma processing chamber for generating or conditioning a plasma;
the controller acts on the radio frequency power generator;
the radio frequency power generator comprises an automatic frequency modulation device; the automatic frequency modulation device carries out automatic frequency modulation at least twice in each radio frequency pulse period;
the controller gives an ignition frequency to the automatic frequency modulation device at the beginning of each radio frequency pulse period, and the time for the plasma to be ignited and reach the stability at the ignition frequency is a specific time period;
the controller gives a starting frequency to the automatic frequency modulation device after a specific time period of each radio frequency pulse cycle and reads an ending frequency when each radio frequency pulse cycle is ended, the ending frequency of each radio frequency pulse cycle is used as the starting frequency of the next radio frequency pulse cycle, and the starting frequency of the first radio frequency pulse cycle is a preset frequency;
the automatic frequency modulation method comprises the following steps: giving a preset frequency to the radio frequency power generator, correspondingly obtaining a first reflected power, adding a step length to the preset frequency to give the radio frequency power generator, correspondingly obtaining a second reflected power, comparing the first reflected power with the second reflected power, if the second reflected power is larger than the first reflected power, adding the step length to the opposite direction, if the second reflected power is smaller than the first reflected power, continuing adding two step lengths to the preset frequency to give the radio frequency power generator, and adjusting to obtain smaller reflected power.
23. The processing apparatus of claim 22, wherein: the pulse radio frequency signal comprises high-level power and low-level power, and the ignition frequency of the high-level power and the ignition frequency of the low-level power are the same or different.
24. The processing apparatus of claim 22, wherein: the specific period includes a high level specific period and a low level specific period, and the high level specific period and the low level specific period are the same.
25. The processing apparatus of claim 22, wherein: the specific period includes a high level specific period and a low level specific period, and the high level specific period and the low level specific period are not the same.
26. The processing apparatus of claim 22, wherein: the ignition frequency is a frequency at which plasma ignition can be achieved.
27. The processing apparatus of claim 22, wherein: the preset frequency comprises a high-level preset frequency and a low-level preset frequency, the high-level preset frequency is a frequency corresponding to the minimum reflected power of the radio frequency power generator during continuous high-power output, and the low-level preset frequency is a frequency corresponding to the minimum reflected power of the radio frequency power generator during continuous low-power output.
28. The processing apparatus of claim 22, wherein: the frequency modulation time of the automatic frequency modulation device is more than or equal to 0.1 microsecond.
29. The processing apparatus of claim 22, wherein: and in a specific time period when the plasma is ignited and reaches a stable state, the automatic frequency modulation device performs automatic frequency modulation by taking the ignition frequency as a starting frequency.
30. The processing apparatus of claim 22, wherein: and in a specific time period when the plasma is ignited and reaches a stable state, the automatic frequency modulation device does not perform automatic frequency modulation.
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| CN103928283A (en) * | 2013-01-10 | 2014-07-16 | 中微半导体设备(上海)有限公司 | Radio frequency pulse power coupling method and apparatus for vacuum treatment cavity |
| TW201505067A (en) * | 2013-06-17 | 2015-02-01 | Applied Materials Inc | Method for fast and repeatable plasma ignition and tuning in plasma chambers |
| CN106298418A (en) * | 2015-05-18 | 2017-01-04 | 中微半导体设备(上海)有限公司 | inductively coupled plasma processing system and processing method |
| TW201715563A (en) * | 2015-10-26 | 2017-05-01 | Advanced Micro-Fabrication Equipment Inc | Multi-frequency pulsed plasma processing device and processing method and cleaning method thereof for supplying stable electric charges to prevent main plasma above substrate from vanishing and effectively clean chamber components so as to enhance stability of chamber body |
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| CN103928283A (en) * | 2013-01-10 | 2014-07-16 | 中微半导体设备(上海)有限公司 | Radio frequency pulse power coupling method and apparatus for vacuum treatment cavity |
| TW201505067A (en) * | 2013-06-17 | 2015-02-01 | Applied Materials Inc | Method for fast and repeatable plasma ignition and tuning in plasma chambers |
| CN106298418A (en) * | 2015-05-18 | 2017-01-04 | 中微半导体设备(上海)有限公司 | inductively coupled plasma processing system and processing method |
| TW201715563A (en) * | 2015-10-26 | 2017-05-01 | Advanced Micro-Fabrication Equipment Inc | Multi-frequency pulsed plasma processing device and processing method and cleaning method thereof for supplying stable electric charges to prevent main plasma above substrate from vanishing and effectively clean chamber components so as to enhance stability of chamber body |
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