TWI503434B - Sputter-coating device - Google Patents
Sputter-coating device Download PDFInfo
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- TWI503434B TWI503434B TW098119854A TW98119854A TWI503434B TW I503434 B TWI503434 B TW I503434B TW 098119854 A TW098119854 A TW 098119854A TW 98119854 A TW98119854 A TW 98119854A TW I503434 B TWI503434 B TW I503434B
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Description
本發明涉及一種鍍膜裝置，尤其涉及一種濺鍍鍍膜裝置。 The invention relates to a coating device, in particular to a sputtering coating device.
濺鍍鍍膜裝置係利用在真空腔體內產生等離子體去撞擊靶材，將靶材內的原子撞出而沈積在複數鍍膜基板表面堆積成膜的鍍膜裝置。在濺鍍的過程中，從靶材內撞出的原子帶有較高的能量，當沈積在鍍膜基板表面上時，會將鍍膜基板加熱。 The sputtering coating apparatus is a coating apparatus which deposits a film on a surface of a plurality of coated substrates by causing plasma to be generated in the vacuum chamber to strike the target, and the atoms in the target are knocked out. During the sputtering process, the atoms that are knocked out of the target have a higher energy, and when deposited on the surface of the coated substrate, the coated substrate is heated.
由於在腔體內產生的等離子體較集中在腔體中間，因而在靶材被等離子體撞擊時，在該腔體中間的被撞出的原子要多於在該腔體兩邊的被撞出的原子。當原子從靶材擴散至該複數鍍膜基板表面時，容易造成在該腔體中間的鍍膜基板有較多的原子沈積，因此在腔體中間的鍍膜基板的溫度高於在腔體兩邊的鍍膜基板的溫度。這種溫度差異容易造成同批次的該複數鍍膜基板的鍍膜品質不一致。 Since the plasma generated in the cavity is concentrated in the middle of the cavity, when the target is hit by the plasma, more atoms are knocked out in the middle of the cavity than the displaced atoms on both sides of the cavity. . When atoms diffuse from the target to the surface of the plurality of coated substrates, the deposited substrate in the middle of the cavity is likely to have more atomic deposition, so the temperature of the coated substrate in the middle of the cavity is higher than that on both sides of the cavity. temperature. This temperature difference is likely to cause inconsistencies in the coating quality of the same batch of the coated substrate.
有鑒於此，有必要提供一種使該複數鍍膜基板鍍膜品質均勻的濺鍍鍍膜裝置。 In view of the above, it is necessary to provide a sputtering coating apparatus that uniformizes the coating quality of the plurality of coated substrates.
一種濺鍍鍍膜裝置，其包括一個腔體，位於該腔體內相對設置的一個板狀第一電極及一個板狀第二電極，及複數呈陣列排列在該第一電極上的鍍膜基板，其中，該濺鍍鍍膜裝置還包括一個溫度 感測單元，一個控制單元及一個加熱單元。該加熱單元包括兩個分別位於該第一電極兩相對側邊緣並與該第一電極相間隔的加熱元件。該加熱元件用於對位於該第一電極邊緣上的鍍膜基板進行輻射加熱。該溫度感測單元用於感測該第一電極中間的溫度及邊緣的溫度。該控制單元分別與該溫度感測單元及該加熱單元電連接，並用於比較該第一電極邊緣的溫度與該第一電極中間的溫度的大小。當該第一電極邊緣的溫度小於該第一電極中間的溫度時，該控制單元控制該加熱單元利用該兩個加熱元件對位於該第一電極邊緣上的鍍膜基板進行加熱。 A sputtering coating device comprising a cavity, a plate-shaped first electrode and a plate-shaped second electrode disposed opposite to each other in the cavity, and a plurality of coated substrates arranged in an array on the first electrode, wherein The sputtering coating device also includes a temperature A sensing unit, a control unit and a heating unit. The heating unit includes two heating elements respectively located at opposite side edges of the first electrode and spaced apart from the first electrode. The heating element is for radiant heating of the coated substrate located on the edge of the first electrode. The temperature sensing unit is configured to sense a temperature between the first electrode and a temperature of the edge. The control unit is electrically connected to the temperature sensing unit and the heating unit, respectively, and is configured to compare the temperature of the first electrode edge with the temperature of the first electrode. When the temperature of the edge of the first electrode is less than the temperature between the first electrodes, the control unit controls the heating unit to heat the coated substrate located on the edge of the first electrode by the two heating elements.
相對于先前技術，上述濺鍍鍍膜裝置，藉由在放置有複數鍍膜基板的第一電極邊緣放置加熱元件，當第一電極邊緣的溫度小於其中間的溫度時，控制單元藉由加熱單元對第一電極邊緣上的鍍膜基板進行加熱，使溫度差異消失，從而使該複數鍍膜基板的鍍膜品質均勻。 Compared with the prior art, the above-mentioned sputtering coating device places a heating element on the edge of the first electrode on which the plurality of coated substrates are placed, and when the temperature of the edge of the first electrode is less than the temperature in the middle thereof, the control unit uses the heating unit to The coated substrate on the edge of one electrode is heated to make the temperature difference disappear, so that the coating quality of the plurality of coated substrates is uniform.
100‧‧‧濺鍍鍍膜裝置 100‧‧‧Sputter coating device
10‧‧‧腔體 10‧‧‧ cavity
22‧‧‧第一電極 22‧‧‧First electrode
24‧‧‧第二電極 24‧‧‧second electrode
30‧‧‧鍍膜基板 30‧‧‧ coated substrate
40‧‧‧溫度感測單元 40‧‧‧Temperature sensing unit
50‧‧‧控制單元 50‧‧‧Control unit
60‧‧‧加熱單元 60‧‧‧heating unit
12‧‧‧底壁 12‧‧‧ bottom wall
26‧‧‧支撐桿 26‧‧‧Support rod
28‧‧‧吊桿 28‧‧‧Boom
14‧‧‧頂壁 14‧‧‧ top wall
22a‧‧‧第一電極中間 22a‧‧‧The middle of the first electrode
22b‧‧‧第一電極邊緣 22b‧‧‧first electrode edge
42‧‧‧溫度感測器 42‧‧‧Temperature Sensor
62‧‧‧模溫機 62‧‧‧Mold temperature machine
64‧‧‧加熱元件 64‧‧‧heating elements
66‧‧‧輸送管 66‧‧‧Transport tube
68‧‧‧工作流體 68‧‧‧Working fluid
圖1為本發明實施方式提供的一種濺鍍鍍膜裝置的結構示意圖。 FIG. 1 is a schematic structural view of a sputtering coating device according to an embodiment of the present invention.
圖2為圖1的濺鍍鍍膜裝置的部分平面示意圖。 2 is a partial plan view of the sputtering coating device of FIG. 1.
圖3為圖1的濺鍍鍍膜裝置的功能模組圖。 3 is a functional block diagram of the sputtering coating device of FIG. 1.
下面將結合附圖對本發明作進一步的詳細說明。 The invention will be further described in detail below with reference to the accompanying drawings.
請參閱圖1和圖3，本發明實施方式提供的一種濺鍍鍍膜裝置100，其包括一個腔體10，位於該腔體10內相對設置的一個第一電極22及一個第二電極24，複數鍍膜基板30，一個溫度感測單元40， 一個控制單元50及一個加熱單元60。 Referring to FIG. 1 and FIG. 3 , a sputtering coating apparatus 100 according to an embodiment of the present invention includes a cavity 10 , a first electrode 22 and a second electrode 24 disposed opposite to each other in the cavity 10 . a coated substrate 30, a temperature sensing unit 40, A control unit 50 and a heating unit 60.
該腔體10為氣密封的腔體。該第一電極22為陰極，其藉由支撐桿26置於該腔體10的底壁12上。該第二電極24為陽極，其藉由吊桿28固定在該腔體10的頂壁14上。本實施方式中，該第一電極22及第二電極24均為方形平板狀。靶材(圖未示)固定在該第二電極24上，在該腔體10內產生的等離子體產生的離子去撞擊靶材，將靶材內的原子撞出。 The cavity 10 is a hermetically sealed cavity. The first electrode 22 is a cathode that is placed on the bottom wall 12 of the cavity 10 by a support rod 26. The second electrode 24 is an anode that is secured to the top wall 14 of the cavity 10 by a boom 28. In the present embodiment, the first electrode 22 and the second electrode 24 have a square flat plate shape. A target (not shown) is fixed to the second electrode 24, and ions generated by the plasma generated in the cavity 10 collide with the target to knock out atoms in the target.
該複數鍍膜基板30如複數需進行防電磁干擾(Electromagnetic Interference)鍍膜的鏡座呈陣列排列放置於該第一電極22上(參圖2)。被撞出的靶材原子藉由該第一電極22及該第二電極24間的電場吸引而沈積在該複數鍍膜基板30並形成膜層。 The plurality of coated substrates 30 are placed on the first electrode 22 in an array of a plurality of mirrors that are subjected to an electromagnetic interference (electromagnetic interference) coating (see FIG. 2). The target atom that is knocked out is deposited on the plurality of coated substrates 30 by the electric field attraction between the first electrode 22 and the second electrode 24 to form a film layer.
該溫度感測單元40用於感測該第一電極22中間22a的溫度及邊緣22b的溫度。具體地，該溫度感測單元40包括複數分別位於該第一電極22中間22a及邊緣22b的溫度感測器42。該第一電極22中間22a的溫度為位於第一電極22中間22a的複數溫度感測器42偵測的複數溫度的平均溫度，該第一電極22邊緣22b的溫度為位於第一電極22邊緣22b的複數溫度感測器42偵測的複數溫度的平均溫度。可以理解，在第一電極22中間22a及邊緣22b可設置更多溫度感測器42，以更加準確地感測溫度。該溫度感測器42為熱電偶溫度感測器或熱電阻溫度感測器。 The temperature sensing unit 40 is configured to sense the temperature of the middle 22a of the first electrode 22 and the temperature of the edge 22b. Specifically, the temperature sensing unit 40 includes a plurality of temperature sensors 42 respectively located in the middle 22a and the edge 22b of the first electrode 22. The temperature of the middle portion 22a of the first electrode 22 is the average temperature of the complex temperature detected by the plurality of temperature sensors 42 located in the middle 22a of the first electrode 22, and the temperature of the edge 22b of the first electrode 22 is located at the edge 22b of the first electrode 22. The average temperature of the complex temperature detected by the complex temperature sensor 42. It can be understood that more temperature sensors 42 can be disposed in the middle 22a and the edge 22b of the first electrode 22 to more accurately sense the temperature. The temperature sensor 42 is a thermocouple temperature sensor or a thermal resistance temperature sensor.
該控制單元50分別與該溫度感測單元40及該加熱單元60電連接，並用於比較該邊緣22b的溫度與該中間22a的溫度的大小。 The control unit 50 is electrically connected to the temperature sensing unit 40 and the heating unit 60, respectively, and is used to compare the temperature of the edge 22b with the temperature of the intermediate portion 22a.
該加熱單元60包括一個模溫機62，兩個加熱元件64及兩個輸送管 66。本實施方式中，該模溫機62置於腔體10外，及每個加熱元件64為加熱管，該模溫機62分別藉由該兩個輸送管66與該兩個加熱元件64相連接。每個加熱元件64，如銅管或鋁管，為中空圓柱管，其內充滿有工作流體68，該工作流體68可為水或油。該模溫機62加熱該工作流體68並藉由該輸送管66將加熱後的工作流體68送至該加熱元件64。較佳地，每個輸送管66為具有雙通道的輸送管，如此，在模溫機62與加熱元件64之間可形成迴圈流道，使工作流體68更快地被加熱並送至加熱元件64。由於加熱元件64使用導熱性能較佳的金屬製成，使工作流體68的熱量快速地散發至該第一電極22邊緣22b上的複數鍍膜基板30，從而加熱複數鍍膜基板30。 The heating unit 60 includes a mold temperature machine 62, two heating elements 64 and two conveying tubes 66. In this embodiment, the mold temperature machine 62 is disposed outside the cavity 10, and each of the heating elements 64 is a heating tube. The mold temperature machine 62 is connected to the two heating elements 64 by the two conveying pipes 66, respectively. . Each heating element 64, such as a copper or aluminum tube, is a hollow cylindrical tube filled with a working fluid 68, which may be water or oil. The mold temperature machine 62 heats the working fluid 68 and sends the heated working fluid 68 to the heating element 64 via the delivery tube 66. Preferably, each of the delivery tubes 66 is a two-channel delivery tube such that a loop flow path can be formed between the mold temperature machine 62 and the heating element 64 to cause the working fluid 68 to be heated and sent to heat more quickly. Element 64. Since the heating element 64 is made of a metal having a better thermal conductivity, the heat of the working fluid 68 is quickly dissipated to the plurality of coated substrates 30 on the edge 22b of the first electrode 22, thereby heating the plurality of coated substrates 30.
當該控制單元50藉由比較後知道第一電極22邊緣22b的溫度小於該第一電極22中間22a的溫度時，該控制單元50控制該加熱單元60利用該兩個加熱元件64對位於該第一電極22邊緣22b上的複數鍍膜基板30進行加熱。如此，可將位於第一電極22中間22a的鍍膜基板30與位於第一電極22邊緣22b的鍍膜基板30的溫度差異消失，從而使該複數鍍膜基板30的鍍膜品質均勻。 When the control unit 50 knows by comparison that the temperature of the edge 22b of the first electrode 22 is less than the temperature of the middle 22a of the first electrode 22, the control unit 50 controls the heating unit 60 to use the two heating elements 64 to be located at the first The plurality of coated substrates 30 on the edge 22b of one of the electrodes 22 are heated. Thus, the temperature difference between the coated substrate 30 located in the middle 22a of the first electrode 22 and the coated substrate 30 located at the edge 22b of the first electrode 22 can be eliminated, thereby making the coating quality of the plurality of coated substrates 30 uniform.
綜上所述，本發明的濺鍍鍍膜裝置，藉由在放置有複數鍍膜基板的第一電極邊緣放置加熱元件，當邊緣的溫度小於中間的溫度時，控制單元藉由加熱單元對第一電極邊緣上的鍍膜基板進行加熱，使溫度差異消失，從而使該複數鍍膜基板的鍍膜品質均勻。 In summary, the sputtering coating apparatus of the present invention places a heating element on the edge of the first electrode on which the plurality of coated substrates are placed, and when the temperature of the edge is less than the intermediate temperature, the control unit controls the first electrode by the heating unit. The coated substrate on the edge is heated to eliminate the temperature difference, thereby making the coating quality of the plurality of coated substrates uniform.
綜上所述，本發明確已符合發明專利之要件，遂依法提出專利申請。惟，以上所述者僅為本發明之較佳實施方式，自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝之人士援依本發明之 精神所作之等效修飾或變化，皆應涵蓋於以下申請專利範圍內。 In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Anyone who is familiar with the skill of this case is assisted by the present invention. Equivalent modifications or variations made by the spirit are to be covered by the following patents.
100‧‧‧濺鍍鍍膜裝置 100‧‧‧Sputter coating device
10‧‧‧腔體 10‧‧‧ cavity
22‧‧‧第一電極 22‧‧‧First electrode
24‧‧‧第二電極 24‧‧‧second electrode
30‧‧‧鍍膜基板 30‧‧‧ coated substrate
40‧‧‧溫度感測單元 40‧‧‧Temperature sensing unit
50‧‧‧控制單元 50‧‧‧Control unit
60‧‧‧加熱單元 60‧‧‧heating unit
12‧‧‧底壁 12‧‧‧ bottom wall
26‧‧‧支撐桿 26‧‧‧Support rod
28‧‧‧吊桿 28‧‧‧Boom
14‧‧‧頂壁 14‧‧‧ top wall
22a‧‧‧第一電極中間 22a‧‧‧The middle of the first electrode
22b‧‧‧第一電極邊緣 22b‧‧‧first electrode edge
42‧‧‧溫度感測器 42‧‧‧Temperature Sensor
62‧‧‧模溫機 62‧‧‧Mold temperature machine
64‧‧‧加熱元件 64‧‧‧heating elements
66‧‧‧輸送管 66‧‧‧Transport tube
68‧‧‧工作流體 68‧‧‧Working fluid
Claims (7)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW098119854A TWI503434B (en) | 2009-06-15 | 2009-06-15 | Sputter-coating device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW098119854A TWI503434B (en) | 2009-06-15 | 2009-06-15 | Sputter-coating device |
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| Publication Number | Publication Date |
|---|---|
| TW201043713A TW201043713A (en) | 2010-12-16 |
| TWI503434B true TWI503434B (en) | 2015-10-11 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4283260A (en) * | 1978-05-13 | 1981-08-11 | Leybold-Heraeus | Method and system for regulating the discharge process in a cathode sputtering apparatus |
| US20060027169A1 (en) * | 2004-08-06 | 2006-02-09 | Tokyo Electron Limited | Method and system for substrate temperature profile control |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4283260A (en) * | 1978-05-13 | 1981-08-11 | Leybold-Heraeus | Method and system for regulating the discharge process in a cathode sputtering apparatus |
| US20060027169A1 (en) * | 2004-08-06 | 2006-02-09 | Tokyo Electron Limited | Method and system for substrate temperature profile control |
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