TWI503174B - The process of making the powder by arc - Google Patents

The process of making the powder by arc Download PDF

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Publication number
TWI503174B
TWI503174B TW102148562A TW102148562A TWI503174B TW I503174 B TWI503174 B TW I503174B TW 102148562 A TW102148562 A TW 102148562A TW 102148562 A TW102148562 A TW 102148562A TW I503174 B TWI503174 B TW I503174B
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powder
film layer
arc
geometric
bumps
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TW102148562A
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TW201524607A (en
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Jenn Shing Wang
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Univ Far East
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以電弧法製造粉體之製程 Process for manufacturing powder by arc method

本發明是有關於一種粉體之製程,特別是有關於一種以電弧法製造粉體之製程。 The present invention relates to a process for producing a powder, and more particularly to a process for producing a powder by an arc method.

目前,習知製作粉體之相關製程多是利用金屬或金屬合金導入電漿中,使之氣化,隨後與氧氣體產生氧化反應,在奈米級氧化物粒子形成後,隨即冷卻以控制其生長速率而製得者。然而這樣的製程所需耗費的時間較多,因此如何能夠更快速的藉由電弧得到粉體係為本發明人所欲達成之目標。 At present, the related processes for preparing powders are mostly introduced into the plasma by metal or metal alloy, gasified, and then oxidized with oxygen gas. After the formation of the nano-sized oxide particles, they are cooled to control them. Produced by the growth rate. However, such a process requires a lot of time, so how to obtain a powder system by arc more quickly is the object that the inventor intends to achieve.

有鑑於習知技藝之各項問題,為了能夠兼顧解決之,本發明人基於多年研究開發與諸多實務經驗,提出一種以電弧法製造粉體之製程,以作為改善上述缺點之實現方式與依據。 In view of the problems of the prior art, the present inventors have proposed a process for manufacturing a powder by an arc method based on years of research and development and many practical experiences, as an implementation method and basis for improving the above disadvantages.

有鑑於此,本發明之目的就是在提供一種以電弧法製造粉體之製程,以提高製作粉體之便利性。 In view of the above, an object of the present invention is to provide a process for producing a powder by an arc method to improve the convenience of producing a powder.

根據本發明之目的,提出一種以電弧法製造粉體之製程,其主要係利用電弧電擊絕緣基板,絕緣基板表面有複數個幾何凸點,使複數個幾何凸點表面之薄膜層破裂,並使薄膜層物質受到電擊而受熱解離為細絲狀粉體、片狀粉體和圓球狀粉體。 According to the object of the present invention, a process for manufacturing a powder by an arc method is proposed, which mainly uses an electric arc to strike an insulating substrate, and a plurality of geometric bumps on the surface of the insulating substrate rupture the film layer on the surface of the plurality of geometric bumps, and The film layer material is subjected to an electric shock and is thermally dissociated into a filamentous powder, a flake powder, and a spherical powder.

較佳者,絕緣基板的材質可例如為高分子聚合物、氧化鋁或氧化鋯。 Preferably, the material of the insulating substrate is, for example, a high molecular polymer, aluminum oxide or zirconium oxide.

較佳者,電弧係為5,000~120,000伏特(V)高壓電所產生。 Preferably, the arc is produced by 5,000 to 120,000 volts (V) of high voltage.

較佳者,薄膜層材質可例如為金屬、陶瓷或其組合。 Preferably, the material of the film layer can be, for example, metal, ceramic or a combination thereof.

較佳者,薄膜層受到電擊而解離為細絲狀粉體、片狀粉體、圓球狀粉體或其組合。 Preferably, the film layer is subjected to electric shock and dissociated into a filamentous powder, a flake powder, a spherical powder or a combination thereof.

較佳者,複數個幾何凸點的尺寸為0.4~100微米。 Preferably, the plurality of geometric bumps have a size of 0.4 to 100 microns.

較佳者,複數個幾何凸點的間隔分布距離為1~200微米。 Preferably, the plurality of geometric bumps are spaced apart by a distance of 1 to 200 microns.

較佳者,複數個幾何凸點的外觀形狀可例如為矩形體、長條狀或角椎體。 Preferably, the appearance shape of the plurality of geometric bumps may be, for example, a rectangular body, a strip shape or an angular body.

承上所述,因依本發明之以電弧法製造粉體之製程,具有以下優點: As described above, the process for manufacturing a powder by the arc method according to the present invention has the following advantages:

(1)此製程可藉由電弧進行電擊,藉此可提高製作粉體之便利性。 (1) This process can be electrically shocked by an electric arc, thereby improving the convenience of manufacturing the powder.

(2)此製程可藉由電弧參數控制,得到多種形狀的粉體,如細絲狀、片狀和圓球狀粉體。 (2) This process can be controlled by arc parameters to obtain powders of various shapes, such as filamentous, flake and spherical powders.

(3)此製程使用絕緣基板,降低電擊漏電危險。 (3) This process uses an insulating substrate to reduce the risk of electric shock leakage.

(4)此製程設計幾何凸點在絕緣基板表面,使電弧沿凸點所在位置前進,導引電弧快速切割薄膜層,理論上其速度接近光速,造成沿絕緣基板平面的破壞效果,形成所需粉體,控制幾何凸點的分布即是預設電弧前進路線,間接可控制粉體的尺寸,而非僅為 電弧單點擊穿薄膜層。 (4) The process design geometric bump is on the surface of the insulating substrate, so that the arc advances along the position of the bump, and the arc is guided to quickly cut the film layer. In theory, the speed is close to the speed of light, causing the destruction effect along the plane of the insulating substrate, forming the required Powder, the distribution of the control geometry bump is the preset arc advancement route, which indirectly controls the size of the powder, not just The arc is single click through the film layer.

(5)薄膜層可具有多層結構,使所得粉體為一層狀複合材。 (5) The film layer may have a multilayer structure such that the obtained powder is a layered composite.

茲為使 貴審查委員對本發明之技術特徵及所達到之功效有更進一步之瞭解與認識,謹佐以較佳之實施例及配合詳細之說明如後。 For a better understanding and understanding of the technical features and the efficacies of the present invention, the preferred embodiments and the detailed description are as follows.

S11~S13‧‧‧步驟流程 S11~S13‧‧‧Step process

第1圖 係為本發明之以電弧法製造粉體之製程示意圖。 Fig. 1 is a schematic view showing the process of manufacturing a powder by an arc method of the present invention.

第2圖 係為電弧單點擊穿薄膜層之示意圖。 Figure 2 is a schematic diagram of an arc single click through film layer.

第3圖 係為本發明之薄膜層受到電擊而解離為圓球狀陶瓷粉體之電子顯微鏡示意圖。 Fig. 3 is a schematic view showing an electron microscope in which the film layer of the present invention is dissociated into a spherical spherical ceramic powder by electric shock.

第4圖 係為係為本發明之薄膜層受到電擊而解離為圓球狀金屬粉體電子顯微鏡示意圖。 Fig. 4 is a schematic view showing an electron microscope in which the film layer of the present invention is subjected to electric shock and dissociated into a spherical spherical metal powder.

第5圖 係為係為本發明之薄膜層受到電擊而解離為細絲狀粉體、片狀粉體及圓球狀粉體之電子顯微鏡示意圖。 Fig. 5 is a schematic view showing an electron microscope in which the film layer of the present invention is subjected to electric shock and dissociated into a filament-like powder, a sheet-like powder, and a spherical powder.

第6圖 係為係為本發明之矩形體幾何凸點之電子顯微鏡示意圖。 Figure 6 is an electron micrograph showing the geometrical bumps of the rectangular body of the present invention.

第7圖 係為本發明之長條形幾何凸點之顯微圖像之電子顯微鏡示意圖。 Figure 7 is a schematic view of an electron microscope of a microscopic image of a long strip of geometric bumps of the present invention.

第8圖 係為本發明之片狀粉體之電子顯微鏡示意圖,尺寸約40微米。 Figure 8 is a schematic view of an electron microscope of the sheet-like powder of the present invention, having a size of about 40 μm.

第9圖 係為本發明之薄膜層具有多層結構之電子顯微鏡示意圖。 Fig. 9 is a schematic view of an electron microscope having a multilayer structure of the film layer of the present invention.

以下將參照相關圖式,說明依本發明較佳實施例之以電弧法製造粉體之製程,為使便於理解,下述實施例中之相同元件係以相同之符號標示來說明。 Hereinafter, the process of manufacturing the powder by the arc method according to the preferred embodiment of the present invention will be described with reference to the accompanying drawings. For the sake of understanding, the same elements in the following embodiments are denoted by the same reference numerals.

請參閱第1圖,其係為本發明之以電弧法製造粉體之製程示意圖。圖中,以電弧法製造粉體之製程之步驟如下:S11:提供一絕緣基板以及一薄膜層。絕緣基板至少包含絕緣之基板本體以及位在基板本體之表面之複數個幾何凸點,且薄膜層位於絕緣基板之幾何凸點之表面上。絕緣基板之厚度約為10mm。幾何凸點的尺寸約為0.4~100微米,且較佳的間隔分布距離約為1~200微米,且其外觀形狀可例如為矩形體、長條狀或角椎體。舉例而言,前述之基板本體的表面例如排列有近似矩陣且寬約1微米、長約2~15微米的複數個幾何凸點(如第6圖所示),上述之絕緣本體的材質可例如為高分子聚合物、氧化鋁或氧化鋯,幾何凸點的形狀例如為長條狀(如第7圖所示)。此外,薄膜層係位於幾何凸點的表面,上述之薄膜層可例如具有多層結構(如第9圖所示),且其材質可例如為金屬、陶瓷或其組合,其中此金屬可例如為銀;S12:利用5,000~120,000伏特(V)的高壓電弧電擊放置在陽極位置的絕緣基板,使位在複數個幾何凸點之表面上之薄膜層破裂;S13:利用前述之高壓電弧使薄膜層受到電擊而解離為粉體,例如為細絲狀粉體、片狀粉體(如第8圖所示)、圓球狀粉體(如第3圖及第4圖所示)或其組合(如第5圖所示),其中數量以片狀最多,約佔6成以上,圓球狀粉體其次,約佔2成。其中,前述之粉體 可例如為層狀複合材。 Please refer to FIG. 1 , which is a schematic diagram of a process for manufacturing a powder by an arc method according to the present invention. In the figure, the process of manufacturing the powder by the arc method is as follows: S11: An insulating substrate and a film layer are provided. The insulating substrate comprises at least an insulating substrate body and a plurality of geometric bumps on the surface of the substrate body, and the film layer is located on a surface of the geometric bump of the insulating substrate. The thickness of the insulating substrate is about 10 mm. The geometric bumps have a size of about 0.4 to 100 micrometers, and a preferred spacing distribution distance of about 1 to 200 micrometers, and the appearance shape thereof may be, for example, a rectangular body, a strip shape, or an angular body. For example, the surface of the substrate body is, for example, arranged with a plurality of geometric bumps (as shown in FIG. 6) of an approximate matrix and about 1 micrometer wide and about 2-15 micrometers long. The material of the insulating body can be, for example, In the case of a high molecular polymer, alumina or zirconia, the shape of the geometric bump is, for example, elongated (as shown in Fig. 7). In addition, the film layer is located on the surface of the geometric bump, and the film layer may have a multi-layer structure (as shown in FIG. 9), and the material thereof may be, for example, a metal, a ceramic or a combination thereof, wherein the metal may be, for example, silver. S12: using a high voltage arc of 5,000 to 120,000 volts (V) to electrically strike an insulating substrate placed at the anode position to rupture the film layer on the surface of the plurality of geometric bumps; S13: subjecting the film layer to the high voltage arc Dissociated into powder by electric shock, such as filamentous powder, flake powder (as shown in Fig. 8), spherical powder (as shown in Fig. 3 and Fig. 4) or a combination thereof (such as Figure 5 shows that the number is the most in the form of a sheet, accounting for more than 60%, and the spherical powder is second, accounting for about 20%. Among them, the aforementioned powder It can be, for example, a layered composite.

綜前所述,本發明之製程設計藉由幾何凸點在絕緣基板表面,使電弧沿凸點所在位置前進,導引電弧快速切割薄膜層,理論上其速度接近光速,造成沿絕緣基板平面的破壞效果,形成所需粉體,而非僅為電弧單點擊穿薄膜層(如第2圖所示)。再者,此製程使用絕緣基板,降低電擊漏電危險,且可藉由電弧參數控制,得到多種形狀的粉體,如細絲狀、片狀和圓球狀粉體。此外,薄膜層可具有多層結構,使所得粉體為一層狀複合材。 As described above, the process design of the present invention advances the arc along the surface of the bump by geometric bumps on the surface of the insulating substrate, and guides the arc to rapidly cut the film layer. Theoretically, the speed is close to the speed of light, resulting in a plane along the insulating substrate. Destruction effect, forming the desired powder, rather than simply clicking through the film layer (as shown in Figure 2). Moreover, the process uses an insulating substrate to reduce the risk of electric shock leakage, and can obtain various shapes of powders, such as filaments, flakes, and spherical powders, by arc parameter control. Further, the film layer may have a multilayer structure such that the obtained powder is a layered composite.

以上所述僅為舉例性,而非為限制性者。任何未脫離本發明之精神與範疇,而對其進行之等效修改或變更,均應包含於後附之申請專利範圍中。 The above is intended to be illustrative only and not limiting. Any equivalent modifications or alterations to the spirit and scope of the invention are intended to be included in the scope of the appended claims.

S11~S13‧‧‧步驟流程 S11~S13‧‧‧Step process

Claims (10)

一種以電弧法製造粉體之製程,其主要步驟如下:提供一絕緣基板以及一薄膜層,該絕緣基板之表面具有複數個幾何凸點,且該薄膜層位於該絕緣基板之該些幾何凸點之表面上;利用一電弧電擊使該些複數個幾何凸點之表面上之該薄膜層破裂;以及利用該電弧電擊使該薄膜層受到電擊而解離為粉體。 A process for manufacturing a powder by an arc method, the main steps of which are as follows: providing an insulating substrate and a film layer, the surface of the insulating substrate having a plurality of geometric bumps, and the film layer is located at the geometric bumps of the insulating substrate On the surface; the film layer on the surface of the plurality of geometric bumps is broken by an arc electric shock; and the film layer is subjected to an electric shock to dissociate into a powder. 如申請專利範圍第1項所述之以電弧法製造粉體之製程,其中該絕緣基板之材質為高分子聚合物、氧化鋁或氧化鋯。 The process for producing a powder by an arc method as described in claim 1, wherein the insulating substrate is made of a polymer, alumina or zirconia. 如申請專利範圍第1項所述之以電弧法製造粉體之製程,其中該電弧係為5,000~120,000伏特(V)高壓電所產生。 The process for producing a powder by an arc method as described in claim 1, wherein the arc is produced by a high voltage of 5,000 to 120,000 volts (V). 如申請專利範圍第1項所述之以電弧法製造粉體之製程,其中該薄膜層之材質為金屬、陶瓷或其組合。 The process for producing a powder by an arc method as described in claim 1, wherein the material of the film layer is metal, ceramic or a combination thereof. 如申請專利範圍第1項所述之以電弧法製造粉體之製程,其中該薄膜層受到電擊而解離為細絲狀粉體、片狀粉體、圓球狀粉體或其組合。 The process for producing a powder by an arc method as described in claim 1, wherein the film layer is subjected to electric shock and dissociated into a filamentous powder, a flake powder, a spherical powder or a combination thereof. 如申請專利範圍第1項所述之以電弧法製造粉體之製程,其中該些幾何凸點的尺寸為0.4~100微米。 The process for manufacturing a powder by an arc method as described in claim 1, wherein the geometric bumps have a size of 0.4 to 100 μm. 如申請專利範圍第1項所述之以電弧法製造粉體之製程,其中該些幾何凸點的間隔分布距離為1~200微米。 The process for manufacturing a powder by an arc method as described in claim 1, wherein the geometric bumps are spaced apart by a distance of 1 to 200 μm. 如申請專利範圍第1項所述之以電弧法製造粉體之製程,其中該些幾何凸點的外觀形狀為矩形體、長條狀或角椎體。 The process for manufacturing a powder by an arc method as described in claim 1, wherein the geometric bumps have a rectangular shape, a strip shape or an angular body. 如申請專利範圍第1項所述之以電弧法製造粉體之製程,其中該 薄膜層具有多層結構,各該多層結構之材質為金屬、陶瓷或其組合。 a process for producing a powder by an arc method as described in claim 1 of the patent application, wherein The film layer has a multi-layer structure, and each of the layers is made of metal, ceramic or a combination thereof. 如申請專利範圍第1項所述之以電弧法製造粉體之製程,其中該粉體為層狀複合材。 The process for producing a powder by an arc method as described in claim 1, wherein the powder is a layered composite.
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW536755B (en) * 2002-06-25 2003-06-11 Taiwan Semiconductor Mfg Method for removing surface copper particle of copper layer
US20050276990A1 (en) * 2002-08-08 2005-12-15 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd) Process for producing alumina coating composed mainly of alpha-type crystal structure, alumina coating composed mainly of alpha-type crystal structure, laminate coating including the alumina coating, member clad with the alumina coating or laminate coating, process for producing the member, and physical evaporation apparatu
CN102576749A (en) * 2009-10-23 2012-07-11 松下电器产业株式会社 Process for production of silicon powder, multi-crystal-type solar cell panel, and process for production of the solar cell panel
TW201240774A (en) * 2010-10-18 2012-10-16 3M Innovative Properties Co Functional particle transfer liner
CN102884221A (en) * 2010-05-07 2013-01-16 株式会社尼康 Conductive sliding film, member formed from conductive sliding film, and method for producing same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW536755B (en) * 2002-06-25 2003-06-11 Taiwan Semiconductor Mfg Method for removing surface copper particle of copper layer
US20050276990A1 (en) * 2002-08-08 2005-12-15 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd) Process for producing alumina coating composed mainly of alpha-type crystal structure, alumina coating composed mainly of alpha-type crystal structure, laminate coating including the alumina coating, member clad with the alumina coating or laminate coating, process for producing the member, and physical evaporation apparatu
CN102576749A (en) * 2009-10-23 2012-07-11 松下电器产业株式会社 Process for production of silicon powder, multi-crystal-type solar cell panel, and process for production of the solar cell panel
CN102884221A (en) * 2010-05-07 2013-01-16 株式会社尼康 Conductive sliding film, member formed from conductive sliding film, and method for producing same
TW201240774A (en) * 2010-10-18 2012-10-16 3M Innovative Properties Co Functional particle transfer liner

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