TWI497708B - Organic electro-luminescent device and fabricating method thereof - Google Patents

Description

Organic electroluminescent device and method of manufacturing same

The present invention relates to a light-emitting element and a method of fabricating the same, and more particularly to an organic electroluminescent device and a method of fabricating the same.

An organic electroluminescent device is a semiconductor element that converts electrical energy into light energy and has high conversion efficiency. Common uses thereof are indicator lamps, display panels, and light-emitting elements of optical heads. Since the organic electroluminescent device has characteristics such as no viewing angle, simple process, low cost, high response speed, wide temperature range, and full color, it is expected to be the next generation flat panel display in accordance with the requirements of the display characteristics of the multimedia era. The mainstream.

1A is a schematic cross-sectional view of a conventional organic electroluminescent device. Referring to FIG. 1A, the organic electroluminescent device 100 is disposed on a substrate 50. The organic electroluminescent device 100 includes gates 101 and 103, a gate insulating layer 105, channel layers 107 and 109, and etch stop layers 111 and 113 and a source. 115, 117, drain electrodes 119, 121, protective layer BP1, BP2, pixel electrode 123, connection line 125, light-emitting layer 127, and cathode layer 129. The gates 101 and 103 are disposed on the substrate 50. The gate insulating layer 105 is disposed on the substrate 50 and the gates 101 and 103. The channel layers 107 and 109 are disposed on the gate insulating layer 105 and are respectively located on the gates 101 and 103.

Etch stop layers 111 and 113 are disposed on the channel layers 107 and 109, respectively. The source 115 and the drain 119 are disposed on the gate insulating layer 105 and the channel layer 107. And etching the termination layer 111. The source electrode 117 and the drain electrode 121 are disposed on the gate insulating layer 105, the channel layer 109, and the etch stop layer 113. The protective layer BP1 is disposed on the gate insulating layer 105, the etch stop layers 111 and 113, the source electrodes 115 and 117, and the drain electrodes 119 and 121, and has contact windows CT1, CT2, and CT3. The pixel electrode 123 is disposed on the protective layer BP1 and electrically connected to the drain 119 through the contact window CT1. The connecting line 125 is disposed on the protective layer BP1, and is electrically connected to the gate 101 and the drain 121 through the contact windows CT2 and CT3.

The protective layer BP2 is disposed on the protective layer BP1, the pixel electrode 123, and the connection line 125, and has an opening O1. The light-emitting layer 127 is disposed on the protective layer BP2 and the pixel electrode 123. The cathode layer 129 is disposed on the light emitting layer 127. In general, the organic electroluminescent device 100 is fabricated using a Photolithography and Etching Process (PEP), the first lithography process is used to form the gates 101 and 103; the second photolithography is performed. The process forms channel layers 107 and 109; the third lithography process forms etch stop layers 111 and 113; the fourth lithography process forms source 115, 117 and drain electrodes 119, 121; and the fifth lithography process The contact windows CT1 to CT3 are formed; the sixth lithography process forms the pixel electrodes 123 and the connection lines 125; and the seventh lithography process forms the openings O1.

1B is a schematic cross-sectional view of a conventional organic electroluminescent device. Referring to FIG. 1A and FIG. 1B, the organic electroluminescent device 150 has a structure similar to that of the organic electroluminescent device 100, except that the organic electroluminescent device 150 does not have the etch stop layers 111 and 113, and thus the organic electroluminescent device The number of lithography processes used for component 150 is six. And, the channel layers 107, 109, the sources 115, 117, and the 中 in the organic electroluminescent device 150 The positions of the poles 119 and 121 are opposite to those of the organic electroluminescent device 100.

The present invention provides an organic electroluminescent device and a method of manufacturing the same, which can reduce the number of micro-etching processes used in manufacturing an organic electroluminescent device, and further reduce the manufacturing cost of the organic electroluminescent device.

The present invention provides an organic electroluminescent device that is adapted to be disposed on a substrate. The organic electroluminescent device comprises a first patterned conductive layer, a gate insulating layer, a patterned semiconductor layer, a second patterned conductive layer, an organic functional layer, and a cathode layer. The first patterned conductive layer is disposed on the substrate. The first patterned conductive layer includes a first gate and a second gate. The gate insulating layer is disposed on the substrate to cover the first gate and the second gate, wherein the gate insulating layer has a contact window to expose the second gate. The patterned semiconductor layer is disposed on the gate insulating layer. The patterned semiconductor layer includes a first channel layer above the first gate and a second channel layer above the second gate. A second patterned conductive layer is disposed on the gate insulating layer, and the second patterned conductive layer includes a first source, a first drain, a second source, a second drain, and a pixel electrode. The first source and the first drain are in contact with the first channel layer, the second source and the second drain are in contact with the second channel layer, and the first drain is electrically connected to the second gate through the contact window. And the second drain is connected to the pixel electrode. The second patterned conductive layer includes an adhesive layer, an intermediate layer and an anode layer. The adhesive layer is in contact with the gate insulating layer. The intermediate layer is located between the adhesive layer and the anode layer, and the adhesive layer, the intermediate layer and the anode layer have substantially the same pattern. The organic functional layer is disposed on the pixel electrode. The cathode layer is disposed on the organic functional layer.

In an embodiment of the invention, the patterned semiconductor layer covers a portion of the second patterned conductive layer.

In an embodiment of the invention, the second patterned conductive layer covers a portion of the patterned semiconductor layer.

In an embodiment of the invention, the organic electroluminescent device further includes an etch stop layer disposed on the patterned semiconductor layer, wherein a portion of the etch stop layer is covered by the second patterned conductive layer.

In an embodiment of the invention, the organic electroluminescent device further includes a pixel defining layer covering the patterned semiconductor layer, the second patterned conductive layer and the gate insulating layer, wherein the pixel defining layer has an opening to expose the drawing Prime electrode.

The present invention also provides a method of fabricating an organic electroluminescent device comprising the following steps. Forming a first patterned conductive layer on a substrate, the first patterned conductive layer comprising a first gate and a second gate. A gate insulating layer is formed on the substrate to cover the first gate and the second gate, wherein the gate insulating layer has a contact window to expose the second gate. Forming a patterned semiconductor layer on the gate insulating layer, wherein the patterned semiconductor layer comprises a first channel layer above the first gate and a second channel layer above the second gate. An adhesive material layer, an intermediate material layer and an anode material layer are sequentially formed on the gate insulating layer. Patterning the adhesive material layer, the intermediate material layer and the anode material layer to form an adhesive layer, an intermediate layer and an anode layer, wherein the adhesive layer, the intermediate layer and the anode layer form a second patterned conductive layer and have substantially the same The second patterned conductive layer includes a first source, a first drain, a second source, a second drain, and a pixel electrode, wherein the first source and the first drain The first channel layer is in contact, the second source and the second drain are in contact with the second channel layer, and the first drain is in contact with the contact window The second gate is electrically connected, and the second drain is connected to the pixel electrode. An organic functional layer is formed on the pixel electrode. A cathode layer is formed on the organic functional layer.

In one embodiment of the invention, the patterning semiconductor layer described above is fabricated prior to the fabrication of the second patterned conductive layer.

In an embodiment of the invention, before the forming the second patterned conductive layer, the method of manufacturing the organic electroluminescent device further comprises forming an etch stop layer on the patterned semiconductor layer, wherein a portion of the etch stop layer is The second patterned conductive layer is covered.

In one embodiment of the invention, the patterned semiconductor layer is fabricated later than the second patterned conductive layer.

In an embodiment of the invention, the method of fabricating the organic electroluminescent device further includes forming a pixel defining layer covering the patterned semiconductor layer, the second patterned conductive layer and the gate insulating layer, wherein the pixel defining layer has a pixel defining layer Opening to expose the pixel electrode.

In an embodiment of the invention, the material of the adhesive layer comprises titanium, molybdenum, indium tin oxide or indium zinc oxide.

In an embodiment of the invention, the material of the intermediate layer comprises silver, aluminum, copper or an alloy of the materials.

In an embodiment of the invention, the material of the anode layer comprises indium tin oxide, indium zinc oxide or molybdenum oxide (MoO ₃ ).

Based on the above, in the organic electroluminescent device of the present invention and the method of manufacturing the same, the number of lithography processes of the method of fabrication is less than that of the conventional lithography process, thereby reducing the manufacturing cost.

In order to make the above features and advantages of the present invention more obvious, the following The embodiments are described in detail with reference to the accompanying drawings.

[First Embodiment]

2A to 2I are schematic cross-sectional views showing a manufacturing process of an organic electroluminescent device according to a first embodiment of the present invention. Referring to FIG. 2A, the manufacturing method of the organic electroluminescent device 200 of the present embodiment includes the following steps. First, a first patterned conductive layer 210 having gates 211 and 213 is formed on the substrate 60, and the gates 211 and 213 are formed through a first lithography process. The material of the substrate 60 may be an inorganic transparent material (for example, glass, quartz, other suitable materials and combinations thereof), and an organic transparent material (for example, polyenes, polyfluorenes, polyalcohols, polyesters, rubbers, thermoplastic polymerization). , thermosetting polymers, polyaromatic hydrocarbons, polymethyl methacrylates, polycarbonates, other suitable materials, derivatives and combinations thereof, inorganic opaque materials (eg bismuth, ceramics, others) Suitable materials or combinations of the above) or a combination of the above.

Referring to FIG. 2B, a gate insulating layer 220 is formed on the substrate 60 to cover the gates 211 and 213 and the substrate 60. The gate insulating layer 220 has a contact window CT4 to expose the gate 213, and the contact window CT4 is transparent. A two-dimensional lithography process is formed. For example, the material of the gate insulating layer 220 is, for example, an inorganic material such as yttrium oxide (SiOx) or tantalum nitride (SiNx). Referring to FIG. 2C, a patterned semiconductor layer 230 having channel layers 231 and 233 is formed on the gate insulating layer 220. Wherein, the channel layer 231 is located above the gate 211, the channel layer 233 is located above the gate 213, and the channel layer 231 And 233 can be formed by a third photolithography process.

Referring to FIG. 2D, etch stop layers 241 and 243 are formed on the channel layers 231 and 233, respectively, and the etch stop layers 241 and 243 are formed through a fourth lithography process. Referring to FIG. 2E, an adhesive material layer 251, an intermediate material layer 253, and an anode material layer 255 are sequentially formed on the gate insulating layer 220, the channel layers 231 and 233, and the etch stop layers 241 and 243. The material of the adhesive material layer 251 includes titanium, molybdenum, indium tin oxide or indium zinc oxide. The material of the intermediate material layer 253 comprises silver, aluminum, copper or an alloy of the materials, and the material of the anode material layer 255 includes indium tin. Oxide, indium zinc oxide or molybdenum oxide (MoO ₃ ).

Referring to FIG. 2F, next, the adhesive material layer 251, the intermediate material layer 253 and the anode material layer 255 are patterned to form an adhesive layer 251a, an intermediate layer 253a and an anode layer 255a, and an adhesive layer 251a, an intermediate layer 253a and an anode layer 255a. It can be formed by a fifth lithography process. The adhesive layer 251a, the intermediate layer 253a and the anode layer 255a constitute the second patterned conductive layer 260 and have substantially the same pattern. For example, the adhesive layer 251a, the intermediate layer 253a, and the anode layer 255a may be a laminate having vertical sidewalls, a laminate having a taper, or a laminate having an undercut. The second patterned conductive layer 260 includes sources 261, 265, drains 263, 267, and pixel electrodes 269.

The source 261 and the drain 263 are in contact with the channel layer 231 and the etch stop layer 241, and the source 261 and the drain 263 cover a portion of the etch stop layer 241 and a portion of the channel layer 231, respectively. The source 265 and the drain 267 are in contact with the channel layer 233 and the etch stop layer 243, and the source 265 and the drain 267 cover a portion of the etch stop layer 243 and a portion of the channel layer 233, respectively. among them, The drain 263 is electrically connected to the gate 213 through the contact window CT4, and the drain 267 is connected to the pixel electrode 269.

Referring to FIG. 2G, next, a pixel defining layer 270 is formed on the gate insulating layer 220, the source electrodes 261, 265, the drain electrodes 263, 267, and the pixel electrode 269, and the pixel defining layer 270 has an opening O2 to expose the pixels. Electrode 269, and opening O2 can be formed through a sixth lithography process. Referring to FIG. 2H, an organic functional layer 280 is formed on the pixel defining layer 270 and the pixel electrode 269. Referring to FIG. 2I, a cathode layer 290 is then formed on the organic functional layer 280.

According to the above, in the embodiment, the organic electroluminescent device 200 includes a first patterned conductive layer 210, a second patterned conductive layer 260, a gate insulating layer 220, a patterned semiconductor layer 230, an etch stop layer 241, 243, The pixel defining layer 270, the organic functional layer 280, and the cathode layer 290. The first patterned conductive layer 210 is disposed on the substrate 60 and includes gates 211 and 213. The gate insulating layer 220 is disposed on the substrate 60 to cover the gates 211 and 213, wherein the gate insulating layer 220 has a contact window CT4 to expose the gate 213. The patterned semiconductor layer 230 is disposed on the gate insulating layer 220.

The patterned semiconductor layer 230 includes a channel layer 231 over the gate 211 and a channel layer 233 over the gate 213. The second patterned conductive layer 260 is disposed on the gate insulating layer 220, the etch stop layers 241 and 243, and the channel layers 231 and 233. The second patterned conductive layer 260 includes sources 261, 265, drains 263, 267, and pixel electrodes 269. The second patterned conductive layer 260 includes an adhesive layer 251a, an intermediate layer 253a, and an anode layer 255a. The adhesive layer 251a is in contact with the gate insulating layer 220. The intermediate layer 253a is located on the adhesive layer Between 251a and the anode layer 255a. The pixel defining layer 270 is disposed on the gate insulating layer 220, the source electrodes 261, 265, the drain electrodes 263, 267, and the pixel electrode 269. The organic functional layer is disposed on the pixel defining layer 270 and the pixel electrode 269. The cathode layer 290 is disposed on the organic functional layer 280.

Referring to FIG. 1A and FIG. 2I, the organic electroluminescent device 200 of the present embodiment can omit the material forming the pixel electrode 123, the connecting line 125 and the protective layer BP2 to reduce the material. cost. Moreover, in this embodiment, a six-pass lithography etching process is used, which is less than a lithography process of the organic electroluminescent device 100, thereby reducing the manufacturing cost.

[Second embodiment]

Figure 3 is a cross-sectional view showing an organic electroluminescent device of a second embodiment of the present invention. 2I and 3, elements having similar or identical functions are denoted by similar or identical reference numerals. According to the illustration, the manufacturing process of the organic electroluminescent device 300 is substantially the same as that of the organic electroluminescent device 200, except that the second patterned conductive layer 260 in the organic electroluminescent device 300 is fabricated earlier than the first pattern. The semiconductor layer 230 is formed, and the organic electroluminescent device 300 does not form the etch stop layers 241, 243, so that the organic electroluminescent device 300 can be fabricated using a five-pass lithography process. Further, in the organic electroluminescent device 300, the channel layer 231 covers a partial region of the source 261 and the drain 263, and the channel layer 233 covers a portion of the source 265 and the drain 267.

Referring again to FIG. 1B and FIG. 3, compared to the organic electroluminescent device 150, The fabrication of the organic electroluminescent device 300 of the present embodiment can omit the formation of the material of the pixel electrode 123, the connection line 125, and the protective layer BP2 to reduce the cost of the material. Moreover, in this embodiment, a five-pass lithography etching process is used, and one lithography process is reduced compared to the organic electroluminescent device 150, thereby reducing the manufacturing cost.

As described above, in the organic electroluminescent device of the present invention and the method of manufacturing the same, the number of lithography processes of the method of fabrication is less than that of the conventional lithography process, thereby reducing the manufacturing cost. Moreover, the organic electroluminescent device of the present invention can use a lesser level of structure, so that the materials used can be saved, thereby reducing the cost of the material.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.

50, 60‧‧‧ substrate

100, 150, 200, 300‧‧‧ organic electroluminescent components

101, 103, 211, 213‧‧ ‧ gate

105, 220‧‧ ‧ brake insulation

107, 109, 231, 233‧‧‧ channel layer

111, 113, 241, 243‧ ‧ etch stop layer

115, 117, 261, 265‧‧ ‧ source

119, 121, 263, 267‧‧ ‧ bungee

123, 269‧‧‧ pixel electrodes

125‧‧‧Connecting line

127‧‧‧Lighting layer

129, 290‧‧‧ cathode layer

210‧‧‧First patterned conductive layer

260‧‧‧Second patterned conductive layer

230‧‧‧ patterned semiconductor layer

251‧‧‧Adhesive material layer

251a‧‧‧Adhesive layer

253‧‧‧Intermediate material layer

253a‧‧‧Intermediate

255‧‧‧Anode material layer

255a‧‧‧anode layer

270‧‧‧ pixel definition layer

280‧‧‧ organic functional layer

BP1, BP2‧‧‧ protective layer

CT1~CT4‧‧‧Contact window

O1, O2‧‧‧ openings

1A is a schematic cross-sectional view of a conventional organic electroluminescent device.

1B is a schematic cross-sectional view of a conventional organic electroluminescent device.

2A to 2I are schematic cross-sectional views showing a manufacturing process of an organic electroluminescent device according to a first embodiment of the present invention.

Figure 3 is a cross-sectional view showing an organic electroluminescent device of a second embodiment of the present invention.

60‧‧‧Substrate

210, 260‧‧‧ patterned conductive layer

211, 213‧‧ ‧ gate

220‧‧‧Brake insulation

230‧‧‧ patterned semiconductor layer

231, 233‧‧‧ channel layer

251a‧‧‧Adhesive layer

253a‧‧‧Intermediate

255a‧‧‧anode layer

261, 265‧‧‧ source

263, 267‧‧ ‧ bungee

269‧‧‧ pixel electrodes

280‧‧‧ organic functional layer

290‧‧‧ cathode layer

300‧‧‧Organic electroluminescent components

CT4‧‧‧Contact window

O2‧‧‧ openings

Claims (12)

An organic electroluminescent device is disposed on a substrate, the organic electroluminescent device includes: a first patterned conductive layer disposed on the substrate, the first patterned conductive layer including a first gate And a second gate; a gate insulating layer disposed on the substrate to cover the first gate and the second gate, wherein the gate insulating layer has a contact window to expose the second gate; a patterned semiconductor layer disposed on the gate insulating layer, the patterned semiconductor layer including a first channel layer above the first gate and a second channel layer above the second gate; The patterned conductive layer is disposed on the gate insulating layer, the second patterned conductive layer includes a first source, a first drain, a second source, a second drain, and a pixel electrode. The first source, the first drain is in contact with the first channel layer, the second source and the second drain are in contact with the second channel layer, and the first drain is transmitted through the contact window The second gate is electrically connected, and the second drain is connected to the pixel electrode. The second patterned conductive layer comprises: an adhesive layer in contact with the gate insulating layer; a middle layer; and an anode layer, the intermediate layer being located between the adhesive layer and the anode layer, and the adhesive layer The intermediate layer and the anode layer have substantially the same pattern, wherein the material of the adhesive layer comprises titanium, molybdenum, indium tin oxide or indium zinc oxide, and the material of the intermediate layer comprises silver, aluminum, copper or the like. The material alloy and the material of the anode layer include indium tin oxide, indium zinc oxide or molybdenum oxide (MoO ₃ ); a pixel defining layer covering the patterned semiconductor layer, the second patterned conductive layer and the gate An insulating layer, wherein the pixel defining layer has an opening to expose the pixel electrode; an organic functional layer disposed on the pixel electrode; and a cathode layer disposed on the organic functional layer. The organic electroluminescent device of claim 1, wherein the patterned semiconductor layer covers a portion of the second patterned conductive layer. The organic electroluminescent device of claim 1, wherein the second patterned conductive layer covers a portion of the patterned semiconductor layer. The organic electroluminescent device of claim 3, further comprising an etch stop layer disposed on the patterned semiconductor layer, wherein a portion of the etch stop layer is covered by the second patterned conductive layer. The organic electroluminescent device of claim 1, wherein the second patterned conductive layer is composed of the adhesive layer, the intermediate layer and the anode layer, and the organic functional layer is in contact with the anode layer. The material of the adhesive layer is titanium or molybdenum, and the material of the intermediate layer comprises silver, aluminum, copper or an alloy of the materials, and the material of the anode layer comprises indium tin oxide, indium zinc oxide or molybdenum oxide (MoO). ₃ ). A method of fabricating an organic electroluminescent device, comprising: forming a first patterned conductive layer on a substrate, the first patterned conductive layer comprising a first gate and a second gate; forming on the substrate a gate insulating layer to cover the first gate and the a second gate, wherein the gate insulating layer has a contact window to expose the second gate; forming a patterned semiconductor layer on the gate insulating layer, the patterned semiconductor layer including a first gate a first channel layer and a second channel layer above the second gate; an adhesive material layer, an intermediate material layer and an anode material layer are sequentially formed on the gate insulating layer; and the adhesive material layer is patterned The intermediate material layer and the anode material layer to form an adhesive layer, an intermediate layer and an anode layer, wherein the adhesive layer, the intermediate layer and the anode layer form a second patterned conductive layer and have substantially the same The second patterned conductive layer includes a first source, a first drain, a second source, a second drain, and a pixel electrode, wherein the first source, the first The drain is in contact with the first channel layer, the second source and the second drain are in contact with the second channel, and the first drain is electrically connected to the second gate through the contact window, and The second drain is connected to the pixel electrode; forming a cover The patterned semiconductor layer, the second patterned conductive layer and the pixel defining layer of the gate insulating layer, wherein the pixel defining layer has an opening to expose the pixel electrode; forming an organic function on the pixel electrode a layer; and forming a cathode layer on the organic functional layer. The method of manufacturing an organic electroluminescent device according to claim 6, wherein the patterned semiconductor layer is formed earlier than the second patterned conductive layer. The organic electroluminescent device according to claim 7 of the patent application scope The manufacturing method further includes forming an etch stop layer on the patterned semiconductor layer before forming the second patterned conductive layer, wherein a portion of the etch stop layer is covered by the second patterned conductive layer. The method of manufacturing an organic electroluminescent device according to claim 6, wherein the patterned semiconductor layer is fabricated later than the second patterned conductive layer. The method for producing an organic electroluminescent device according to claim 6, wherein the material of the adhesive layer comprises titanium, molybdenum, indium tin oxide or indium zinc oxide. The method for manufacturing an organic electroluminescent device according to claim 6, wherein the material of the intermediate layer comprises silver, aluminum, copper or an alloy of the materials. The method for producing an organic electroluminescent device according to claim 6, wherein the material of the anode layer comprises indium tin oxide, indium zinc oxide or molybdenum oxide (MoO ₃ ).