TW200812130A - Method for fabricating a pixel structure of organic electroluminescent display - Google Patents

Abstract

A method for fabricating a pixel structure of an OELD includes the following steps. First, a first gate, a scan line and a second gate are formed on a substrate. Next, a gate insulation layer is formed on the substrate to cover the first gate, the scan line and the second gate. Then, on the gate insulation layer, a first channel layer and a second first channel layer are formed, which are located over the first gate and the second gate, respectively. Afterwards, a first source and a first drain beside the first channel layer and a data line are formed; meanwhile, a second source and a second drain beside the second channel layer, and a cathode electrically connected to the second drain are formed. Further, an organic functional layer is formed on the cathode. Finally, an anode is formed on the organic functional layer.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a method of fabricating a pixel structure, and more particularly to a method of fabricating a pixel structure of an organic electroluminescent display. . [Prior Art] For the rapid advancement of the multimedia society, most of the benefits are due to the rapid development of semiconductor components or display devices. As far as the display is concerned, the Flat Panel Display, which has high image quality, good space utilization efficiency, low noise scale, and (10) 帛 (四), has gradually become the mainstream of the market. Currently, the flat display TF devices on the market include liquid crystal display|| (Uquid plus LCD)>#a t7F 1 (Organic Electro-Luminescence Dispiay, 0ELD) and plasma display panel (7) jobs & coffee P>and' PDP ) Branch. Among them, due to its non-viewing limitation, low manufacturing cost, high response speed (more than 100 times that of liquid crystal), power saving, DC drive, large operating temperature range, and light weight = f large development potential. In general, the organic electro-acoustic ubiquitin structure constitutes 'the structure of each elementary element will be based on the second color = different color light, in order to achieve full color display! Know the organic electro-enhanced display of the elementary display The electromechanical excitation light is formed into a material, and the amorphous money is laser tempered to form a pattern to form a -t, two, two pairs of private polycrystalline hair materials into a younger-polycrystalline layer 110 and a second polycrystalline矽 layer 5 200812130^ --------tV 19215twf.doc/g H2. Next, a gate insulating layer 12 is formed on the substrate loo, and the first polysilicon layer 110 and the second polysilicon layer 112 are formed. It is summer and then please refer to FIG. 1B and FIG. 2 at the same time, the conductor material is less accumulated on the gate insulating layer 12, and the conductor material is verified by the mask process to form the first gate 130 and the second gate. Extremely 132. Then, the gate 13 〇 and the second gate 132 are used as masks _ (d叩, the first more than the first gate 13 〇

v a source; hidden and - pole region, and formed in the first polycene layer 112 on both sides of the second brother - the second source region 112a fish - a > and the polar region 112b. Then, referring to FIG. 1C', a dielectric layer 14 is formed on the substrate 1 to cover the first gate 130, the second gate 132, and a portion of the gate insulating reed. Next, the process is performed by the mask. The dielectric layer (10) is patterned to form a first contact opening C1, a second contact opening C2, a third contact opening and a contact opening C4 in the gate layer 140 and the gate insulating layer 120. Wherein, the first contact opening C1 and the second contact opening Q respectively expose the first source region and the first drain region·, and the third contact opening C3 and the fourth contact opening C4 respectively expose the second source ^ 112a and the second bungee zone U2b. Thereafter, the eye I is shown in Fig. 1D, and a metal material is deposited on the substrate 1(), and the first-contact opening σ α, the second contact opening σ C2, the third contact opening C3, and the fourth contact opening σ C4 are filled. Next, the metal material is patterned by a photomask process to form a first source 15 〇, a second source 152, a first 154 and a second drain 156. 6 19215twf.doc/g 200812130 Next, referring to FIG. IE, a protective layer 16A is formed on the substrate 100 to cover the dielectric layer 140, the first source 150, the second source 152, and the first drain 154. The second step is 156. Then, patterning is performed by a mask enamel layer 160 to form a fifth contact opening C5 exposing the first: source in the protective layer 160. Then, indium tin oxide (ΠΌ) is deposited on the substrate 100 with reference to Fig. 1F', and the fifth contact opening C5 is filled. Next, the indium tin oxide is patterned by a mask process to form an anode 170 electrically coupled to the second source 152. Finally, referring to FIG. 1G, an organic material (发光rganic material) light-emitting layer 172 is formed on the substrate 100 by a shadow mask process, and covers the anode 17〇. The illuminating layer 172 to be described herein emits red, illuminating or green light due to the organic luminescent material selected for it. A metal material is then deposited over the light-emitting layer 172 to form a cathode 174. Specifically, the § '% pole 170, the light-emitting layer 172 and the cathode 174 can constitute the organic electroluminescent element 18A as shown in FIG. In addition, the switching transistor Ts of FIG. 2 is composed of a first gate 130, a first source 15 〇 and a first drain 154, and the driving transistor Td shown in FIG. 2 is a second gate. The pole 132, the second source 152 and the second drain 156 are formed. Here, the first gate 130 of the switching transistor Ts is electrically connected to the scan line 10, which is the step of FIG. 1B and the first gate 13 〇 is defined together with the second gate 132. In addition, the first source 15 开关 of the switching transistor Ts is electrically connected to the data line 20, and the data line 2 is shown in FIG. 1Dm. Step 7 200812130w 19215twf.doc/g The source 15〇 is defined together with the first drain 154. Generally, there is a capacitor 3 之间 between the second gate 132 of the driving transistor Td and the first drain 154 of the driving transistor Td. In addition, the anode 170 having the electromechanical excitation grating 180 is electrically connected to the source electrode 152 of the driving transistor Td. According to the crystal theory, when the inter-electrode-source voltage across the transistor Vgs is greater than the threshold voltage Vt, the transistor is turned on; at the beginning, that is, when the gate-to-source voltage Vds is not large, vds< Vgs_Vt _ The current I through the organic electroluminescent element is proportional to Vds, which is the case of the linear region; and since the organic electroluminescent element 18〇 increases its cross-over voltage with increasing use time, when Vds>; Vgs-Vt Japanese Temple, turned into a saturation zone, that is, the current I does not increase with the increase of the inter-source source voltage Vds. According to the transistor saturation formula, as follows: I = l~C(W/L)(Vgs-Vt)2 I : Current through the organic electroluminescence element μ: Electron mobility C: Gate capacitance per unit area • W: gate width L: effective gate length Vgs: the voltage across the gate and source of the driving transistor 'Vt •• threshold voltage, due to the second gate 132 and the second source of the driving transistor The voltage Vgs between 152 drops, so that the current I passing through the organic electroluminescence element 18 is lowered, resulting in a decrease in the luminance of the organic electroluminescence element 18A. As a result, the display quality of the organic electroluminescent display will be affected. 8 200812130"---The full-color organic light-emitting display will use three different types of halogen structures, but due to different organic hair precursors; the seven-shaped shape does not cause 'so this will lead to organic electroluminescence The display panel has a problem of uneven display. On the other hand, the structure of the conventional organic electroluminescent display requires seven channels of light as shown in the above 1A~1G, = the manufacturing cost is consumed, and the process time cannot be effectively reduced, thereby causing the production month b (Throughput) Direct impact. SUMMARY OF THE INVENTION The purpose of θ 圭 2 f is to provide an organic electroluminescence excitation display crying manufacturing method to solve the problem that the conventional manufacturing method cannot: reduce the manufacturing cost. One object is to provide an organic electroluminescence display method to solve the conventional organic electroluminescence display which has a problem that the display product f is not good after the long day (four) system. (4) For other purposes, the present invention provides a method for fabricating an organic electro-excited pixel structure, which comprises the steps of: first, forming a -th-gate, and electrically connecting the first pole to the sweep line and Then, the substrate is covered on the first gate of the first gate of the first gate of the first gate of the first gate of the first gate and the first gate of the scan gate, the first gate of the scan gate, and the second gate layer. Thereafter, a metal layer is formed on the substrate, i, the channel layer and the second channel layer. In addition, a first source is formed on both sides of the channel-channel layer, and a first=== 2008-12130^ --------W 19215twf.doc/g one of the source electrical connections The line, and simultaneously on the second channel layer, forms a second source, a second source, and a second electrode with a second electrode. Next, an organic functional layer is formed on the cathode. An anode is then formed on the organic functional layer. In the embodiment of the present invention, the method for fabricating the organic electroluminescent display structure further includes forming a capacitor, wherein the second gate of the capacitor is electrically connected to the second electrode, and the other end is electrically connected to the Brother two sources. In an embodiment, the method of constructing the organic electroluminescent display further comprises forming a first ohmic contact layer between the first channel layer and the first source and the second electrode. In a preferred embodiment, the above-described method of manufacturing an organic electroluminescent display further comprises forming a second ohmic contact layer between the second channel layer and the second source and the electrode. In the example of the channel layer, the above-mentioned first-channel layer and the second general product Lu, ΐ本, Γ, in the embodiment, the material of the above-mentioned cathode may include an alloy, a chromium alloy or a silver alloy. The indium tin tH is implemented, and the material of the cut anode may include a qi emulsion, an indium zinc oxide or a ruthenium. Previously, the implementation of the formation of the organic functional layer on the cathode further includes forming an "insulation layer" over the substrate to expose the cathode. 19215 twf.doc/g 200812130w In one embodiment of the invention, a plasma treatment process is performed on the surface of the cathode. After the pole, the method further comprises, in an embodiment of the invention, the gas of the upper crucible may comprise hydrogen, oxygen or nitrogen. The invention provides a method for manufacturing organic electroluminescent light w, which comprises the following steps: First, Pseudostructure

- a polycrystalline layer and a second polycrystalline layer. Forming a first insulating layer on the connecting plate to cover the first (four) layer=base, forming a gate: a first gate is formed on the edge layer, and the first polycrystal is formed on the first polycrystal and the second polycrystal respectively The side:-polycrystalline germanium layer forms a _th source region < and a _th: no: product, and a second polycrystalline region 1 and a second nonpolar region on both sides of the second gate. In addition, one on the substrate is formed: ^ Brother gate and red gate. Then, the dielectric layer and the gate form a first contact opening, a 篦-to-extract total + τπ / - fourth; _ a contact opening σ, a third three contact opening and a Wu = touch opening, wherein the first contact opening and the first The second contact opening respectively prepares the 苐i pole region and the first immersion region, and the third contact opens σ, and the mouth exposes the second source region and the second region and the pole region, respectively. Then, a metal layer is formed on the second electric layer to separate the first contact opening, the second contact opening, the third contact opening σ and the fourth contact opening. Thereafter, the metal layer is patterned to form a -first source, a first-nothing pole, and a data line electrically connected to the first source, and simultaneously form a second source, a //pole, and The second drain is electrically connected to one of the cathodes. Next, a layer is formed on the substrate 11 200812130w 19215twfdoc/g to cover the data line, the scale, the first, the second, and the second. _, forming an organic functional layer on _. An anode is then formed on the organic functional layer. In the example, the above-mentioned organic electroluminescent display display, the method of coating 1 further comprises forming a capacitor, the "end of the capacitor, the second gate and the first-and very-electrode connection, and the other end is electricity. Sexually connected to the second source.

In the embodiment of the invention, the material of the cathode described above may comprise aluminum, chromium, silver, an aluminum alloy, a chromium alloy or a silver alloy. In the actual closure of the present invention, the material of the anode of the domain may comprise indium tin oxide, indium oxide or aluminum zinc oxide. In the embodiment of the present invention, the formation of the organic functional layer on the cathode, ii, further comprises forming an insulating layer over the substrate to expose the cathode. In an embodiment of the invention, after the cathode is formed, the surface of the cathode is further subjected to a plasma treatment process. In an embodiment of the invention, the gas used in the plasma processing process may include hydrogen, oxygen or nitrogen. In the method for manufacturing a halogen structure of the organic electroluminescent display of the present invention, since the cathode is formed together with the source and the drain, the method for manufacturing the halogen structure of the organic electroluminescent display of the present invention is compared with the conventional method. The method can reduce a mask. Therefore, the manufacturing method of the present invention can be more economical in terms of manufacturing cost and process time, thereby effectively increasing productivity. The above and other objects, features and advantages of the present invention will become more <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; [Embodiment] FIG. 3A to FIG. 3F are diagrams showing a method for manufacturing a pixel flip-flop in the first embodiment of the present invention, and FIG. 4 is a schematic view of the present invention. κ _ The intention of the organic electroluminescent display. Please also refer to Figure 3Α and Figure;

One of the first gates 312, the first gate 312, and the second gate 314, and a second gate connection, in detail, the first gate 312, the scan line 314

Is the physical vapor deposition method (4) ... accumulation of gold - genus = = 3 G, but the layout is patterned by the fresh-made metal material, P can complete the first gate 312, the scan line 314 and the: gate Training production. The above-mentioned metal materials may be selected from low-resistance materials such as Ming, Jin, Cu, Mo, Mo, Ti, Pu Ming a i, Ming Magnesium alloy, No. 1 alloy or copper alloy. Next, a gate insulating layer 320 is formed on the substrate 310 to cover the first gate 312, the scan line 314 and the second gate 316. The material of the gate insulating layer may be tantalum nitride or oxidized oxide formed by using tetraethoxy decane (TE〇s) as a reaction gas source. Referring to FIG. 3B, a first channel layer 330 and a second channel layer 332 are formed on the gate insulating layer 320, and are respectively disposed above the first gate 312 and the second gate 316. The first channel layer 330 and the second channel layer 332 may be deposited on the substrate 31 by, for example, chemical vapor deposition (CVD) deposition of amorphous silicon or an organic semiconductor material. 13 200812130w 19215twf.doc/g In order to reduce the contact impedance between the channel layer 330 and the second channel layer 332 and the metal material, it is practical to open on the first channel layer illusion &gt; into a first ohm A contact layer (〇hmC〇ntactlayer) 33 is added, and a second ohmic contact layer 332a is formed on the second channel layer 332. ;

Referring to FIG. 3C, a metal layer 34 is formed on the substrate 310, and the material thereof is, for example, aluminum, chromium, silver, aluminum alloy or magnesium aluminum alloy, chromium alloy or silver alloy to cover the first ohmic contact layer 33〇a. The second ohmic contact chip 332a and the gate insulating layer 320.曰, / then please refer to FIG. 3D, and then the metal layer 34 is patterned by a mask process, that is, a first source 342 and a first 形成 can be formed on both sides of the first channel layer 33〇. The pole 344 and the first source 342 are electrically connected to one of the data lines 345 (please refer to FIG. 4), and simultaneously to the second channel layer

Then, the first channel layer 330 and the second channel layer 332 are completed by patterning the X-up to the amorphous silicon material or the organic semiconductor material deposited on the substrate 31 by a mask process. . A second source 346, a second drain 348, and a second drain 348 are electrically connected to one of the cathodes 349 on both sides of the second layer. Then, the first ohmic contact layer 33A exposed by the second electrode 342 and the first drain 344 is removed, and the second ohm exposed by the second source 346 and the second drain 348 is removed. Contact layer 332a. In accordance with a preferred embodiment of the present invention, after the cathode 349 is formed, the surface of the cathode 349 can be subjected to a plasma treatment process to remove oxides from the surface of the cathode 349 and reduce the roughness of the surface of the cathode 349. In addition, the plasma treatment process allows (4) the gas phase "hydrogen, minus or nitrogen. 19215twf.doc/g 200812130 and then with reference to Figure 3E, in a preferred embodiment, after the step shown in Figure 3D" Forming an insulating layer 350 over the substrate 310, and the insulating layer 350 exposes the cathode 349. The method of forming the insulating layer 35 is as follows: by depositing yttrium oxide, tantalum nitride or yttrium oxynitride to cover the outer lanthanum 342, The first drain 344, the data line 345, the second source 346, and the second pole 348 are cathode (10). Next, the deposited material is patterned by a mask process to expose the cathode 349. Next, referring to FIG. 3F, an organic functional layer = g_f_ional laye〇 36〇 is formed on the cathode 349. In one embodiment, the method of forming an organic g 匕 y 360 例如 is performed by a mask (10), for example, by a (10) de-calling process. The organic material is formed on the pole 349. It is specifically noted here that the organic: month t^3=G mainly includes the organic light-emitting layer. In other embodiments, the organic functional layer 36G may further include an electron transport layer and electron injection. Layer, hole transport layer, and hole injection Into the layer 370 is formed on the organic functional layer - anode 37G, the anode H material is, for example, indium tin oxide (ΠΌ), indium zinc oxide (ITO) or Ming = compound (AZ0). A total of electrode structure. In the method, the organic germanium excitation light shows that the manufacturing structure of the halogen structure of the eleventh, the secret = 9 is formed in the first source 342, the first drain 344, the first source 346 and the second At the same time, the manufacturing method invented at the time of the 348 can be more economical than the conventional method, and the processing time can be more economical. The == (Throughput) can be effectively improved. The structure of the halogen formed by the above method is as shown in the figure. 3f and FIG. 4, 19215 twf.doc/g 200812130', the first gate 312, the first source 342, and the first drain 344 may constitute one of the switching transistors Ts shown in FIG. 4, and the switching transistor Ts. The first gate 312 is electrically connected to the scan line 314, and the first source 342 of the switch transistor Ts is electrically connected to the data line 345. The number X is the gate 316 and the second source 346. The second gate 348 can constitute one of the driving transistors Td shown in FIG. 4, and the driving transistor 1 (the second gate 316 of the first one) The first drain 344 is electrically connected to the first drain 344. In a preferred embodiment, the capacitor structure further includes a capacitor 39 〇, and one end of the capacitor 390 and the first drain 344 and the second gate 316 is electrically connected, and the other end is electrically connected to the second source 346. One end of the capacitor 39 and the second source 346 are electrically connected to a reference voltage 55. In addition, the cathode 349 of the present invention, organic functional Layer 360 and anode 370 form an organic electroluminescent element 38G. In particular, the cathode 349 of the organic electroluminescent element 380 is electrically coupled to a power source 5 of the driving transistor Td. Therefore, the organic electro-active Γ f is not affected by the gate and source of the driving transistor Td. Thus, it is possible to solve the problem that the conventional organic electric excitation is lowered and the luminance thereof is lowered. Because of the crying of the right Γ, the organic electroluminescence of the piece is shown as the quality of the enamel. The other party 300 is used to display the full-color writing, and can also be used as the second embodiment of the Tianyin I-structure. The τ仏 has a good color. In the above-mentioned first embodiment, the book is dedicated to the 曰 曰 曰 , , , , , , , , , , , , , 结构 t t t t t t t t t t t t t t t t t t t t t t t t t t 16 200812130

W 19215twf.doc/g II. The pixel structure of the present invention can also be a low temperature polycrystalline 7 thin film electromorphic switch, which is described in detail below. The figure recognizes that the crime is the structure of the organic structure of the organic electroluminescent display of the second embodiment of the Ming Dynasty. Fig. 6 is a circuit diagram showing the structure of an organic γ not 2 ruthenium structure according to a second embodiment of the present invention. First, a first polycrystalline silicon polysilicon layer 414 is formed on a substrate 410 with reference to the figure - Μ = ώ'. In detail, the first polycrystalline layer 〆 layer 〆 〆 〆 〆 414 414 414 can be transmitted through, for example, chemical vapor deposition method: material conversion: change 're-transmission-laser tempering process to make f + Shi Xi 2 into materials. Then, the fabrication of the first polycrystalline layer 412 Tr is completed by a mask process r 匕 2 = patterning. Next, when the substrate is completely formed with -4'Γ: "2〇" to cover the first polysilicon layer 412 and the second polysilicon layer, refer to FIG. 5A and FIG. 6, and the interlayer insulating layer is divided into #430, and A question 430 electrical connection - sweep 430 disk Figure 6): and - second gate 434 'where the first - gate more _41; = knife is located in the first - polycrystalline 412 and second: can 1一 a gate 430, a scan line 432 and a second gate 4 substrate. Then, by a mask process patterning, the first question electrode 43 can be completed: t the metal material can be fine, gold, = pole 17 200812130w 19215twf.doc/g Low resistance material such as chromium, titanium, aluminum alloy, aluminum magnesium alloy, molybdenum alloy or copper alloy. _ Then, the first gate 430 and the second gate 434 are used as masks A doping process is performed to form a first source region 412a and a first drain region 412b in the first polysilicon layer 412 on both sides of the first gate 430, and the gate is 412b A second source region 414a and a second drain region 414b are formed in the second polysilicon chopping layer 414 on both sides of the 434.

Referring to FIG. 5C, a dielectric layer 44 is formed on the substrate 410 to cover the first gate 430, the second gate 434, and the gate insulating layer 42A. Next, a first contact opening 111, a second contact opening H2, a third contact opening 3, and a = second port = 4 are formed in the dielectric layer 440 and the gate insulating layer 420. The first contact opening m and the second contact opening Η2 respectively expose the first source region 412a and the first drain region 412b, and the third contact opening H3 and the fourth contact opening H4 respectively expose the second source ^ 414 &amp; and the second bungee zone 414b.

# Specifically, the method of forming the dielectric layer 440 may first deposit a tantalum nitride or an oxynitride on the substrate 41 〇 ± and cover the first dummy (four) and the first gate 434. Then, the deposited nitride nitride and the oxidized (tetra) oxynitride are patterned by a photomask process, and the dielectric contact opening, the second contact opening σ2, the third contact opening Η3, and the fourth can be read. Contact opening Η4. Then, referring to FIG. 5D, a metal layer 4 - 5 〇 ' is formed on the dielectric layer 44 以 to respectively enter the first contact opening m, the second contact opening, the first contact opening π Η 3 and the fourth contact. Open the Η4. Then, referring to FIG. 5Ε, 2〇〇812130w i92i5_/g, the first source 452, the first drain 454, and the first source 452 are completed by patterning the metal layer 450 by a mask process. One of the data lines 455 (please refer to FIG. 6) is electrically connected, and a second source 456, a second drain 458, and a cathode 459 electrically connected to the second drain 458 are simultaneously formed. In a preferred embodiment, after forming the cathode 459, the surface of the cathode 459 may be further subjected to a plasma treatment process to remove oxides on the surface of the cathode 459 and reduce the roughness of the surface of the cathode 459. Further, the gas used in the plasma processing process may include hydrogen, oxygen or nitrogen. According to a preferred embodiment of the present invention, after the step of FIG. 5E, the step of FIG. 5F is further included, that is, an insulating layer 46 is formed over the substrate 41, and the insulating layer 46 is exposed to expose the cathode 459. The method of forming the insulating layer * (9) can be performed, for example, by depositing yttrium oxide, tantalum nitride or yttrium oxynitride to cover the first source 452, the first drain 454, the data line 455, the second source 456, and the second 汲. The pole 458 and the cathode 459. Next, the deposited material is patterned by a mask process to expose the cathode 459. Then, referring to FIG. 5G, an organic functional layer, 7〇 and one, and an anode 472 are formed on the cathode 459. The method of forming the organic functional layer 47 and the anode 472 is the same as or similar to the method described in the previous first embodiment. Similarly, in the manufacturing process of the above-mentioned organic electroluminescent display, the cathode 459 is defined with the first source, the second and the second 454, the second source 456, and the second drain 458 (f). Therefore, the manufacturing method of the present invention can eliminate the ray mask as compared with the conventional method, thereby reducing the manufacturing cost and the processing time. 19 19215twf.doc/g 200812130 First, the pixel structure formed by the method described in FIG. 5G and FIG. 6 is not shown, the first gate 430, the first 湄粍"qt, and the mouth are shown in FIG. - The switch electric Y body Y 452 and the first immersion 454 are the constitutive elements of the damper, and the first Γ 2 of the switching transistor Ts is electrically connected, and the second phase of the switching transistor Ts is related to the data and the green 455 electrical property. connection. The second gate 434, the first source 456 and the second drain 458 may be sturdy, solidified, and twisted to form a driving electric body Td as shown in FIG. 6, and drive the transistor Td. The second gate 434 is electrically connected to the first gate 454. In the case of a light Wei Ma #点丨士(四)古一a, this pixel structure also includes the first (1)490 'capacitor's end-to-end and the first bungee 454 and the car's armor\434 package connection' The other end will be electrically connected to the second source 456. The terminal of the capacitor 490 and the second source 456 are electrically connected to a reference voltage 65. Further, the cathode 459, the organic functional layer 47A and the anode 472 constitute a = electroluminescent light-emitting member 48G. In particular, the organic electroluminescent device porch and the dipole 459 are electrically connected to the first and second electrodes, and the anode is electrically connected to a power source 60. Therefore, the organic electroluminescent device 48 will not: the effect of the voltage across the gate and the source of the driving transistor Td, and thus the variation of the conventional organic electroluminescent device may be caused by IV under Vgs. The problem of reduced brightness of the light. In summary, due to the pixel of the organic electroluminescent display of the present invention, the cathode of the organic electroluminescent device is defined simultaneously with the source and the drain of the driving transistor and the switching element. Therefore, the present invention can eliminate a mask as compared with the conventional method, so as to simplify the manufacturing process and the % short process time, thereby effectively increasing the productivity. In addition, by 20 19215twf.doc/g 200812130' ^ organic electroluminescent element reading pole is electrically connected to the shaft (four) 岐 pole and its anode is electrically connected to the power supply, so the organic strain = will not be driven by the transistor The effect between the gate and the source ^: The problem that the organic electroluminescence element of the simple-line organic electroluminescence element will decrease due to the decrease of % = will cause the brightness of the light to decrease. The present invention has been disclosed above with reference to the preferred embodiments. (4) Limit = the present invention, any person skilled in the art, in the range of the unconstrained, 'when a little change and retouch can be made, therefore the second Month:: Scope when viewing _ among the full-time _ defined face. ^保保濩 [Simple diagram of the diagram] The schematic diagram of the pixel structure of the ship excitation domain μ is produced. ^It is a circuit of the organic structure of the organic electroluminescence display 11 of the conventional structure, and the organic electroluminescence of the invention display. Schematic diagram of the process flow of the manufacturing process. Heart ===: Electromechanical excitation light shows the knot] Organic electroluminescence display of the embodiment 昼 [Main component symbol description] 10, 314, 432: Scanning line 21 200812130w 19215twfdoc/g 20, 345, 455: Data line 30, 390, 490 · capacitors 40, 50, 60: power supply 55, 65: reference voltage 100, 310, 410 · substrate 110, 412: first polysilicon layer 110a: first source region 110b: first The drain region 112a: the second source region 112b · the second drain region 112, 414: the second polysilicon layer 120, 320, 420: the gate insulating layer 130, 312, 430 · the first gate 132, 316, 434: second gate 140, 440: dielectric layer 150, 342, 452 · first source 154, 344, 454: first drain 152, 346, 456 · second source 156, 348 458: second drain 160: protective layer 170, 370, 472 · anode 172: light-emitting layer Π 4, 349, 459: cathode 180, 380, 480 · organic electroluminescent element 22 200812130w 19215tw£doc/g 200 300, 400: a halogen structure of the organic electroluminescent display 330: a first channel layer 330a: a first ohmic contact layer 332: a second channel layer. 332a: a second ohmic contact 340, 450: metal layer 350, 460 · · insulating layer 360, 470: organic functional layer _ 412a: first source region 412b: first non-polar region 414a · second source region 414b: second bungee region Cl, H1: first contact opening C2, H2: second contact opening C3, H3 · third contact opening C4, H4: fourth contact opening • C5: fifth contact opening

Ts: Switching the transistor d. Driving the transistor 23

Claims (1)

200812130^ 19215twf.doc/g Patent Application Range·· Including a method for manufacturing a pixel structure of an organic electroluminescence display, forming a first gate on a substrate and scanning one of the first gates a first gate layer and a second gate electrode are formed on the substrate; And the knives are located above the first gate and the second gate; a metal layer is formed on the second ΐ 基板 substrate, and the ith layer and the first layer are formed to the first channel The two sides of the layer form -= source, - the first record, and the first source and the source: the line: and: = two of the two channel layers form an organic functional layer on the cathode; The haze forms an anode on the organic functional layer. The - terminal is the second interpole and the capacitor is electrically connected to the second source 3. The manufacturer of the pixel structure as claimed in item i of the patent application scope*, further includes _:=electromechanical excitation The source of the optical display and the first, the square technology, the channel layer, and the first and second brothers form a -first ohm layer. 〜~ « - &quot;罘 and EEG connection, another ~ end 24 200812130 19215twf.doc/g book (4) The organic electroluminescent display described in item 1 - prime, ,,. The manufacturing method of the structure further comprises forming a second ohmic device between the electrodes and the second ohmic material; the manufacturing method of the bismuth material, wherein the material of the first layer comprises amorphous. The material of the organic electroluminescent display layer described by the layer and the electron-emitting layer includes an organic semiconductor material f. , 日-弟-通逼昼==3=Organic electric excitation _ Silver, alloys, materials including &quot;, 4= please! The organic electroluminescent display device according to the first item of the present invention: === The material of the anode includes the indium tin oxide, and the organic electroluminescent display device described in the first aspect of the patent scope, wherein The organic functional electrode is formed on the cathode. Forming an insulating layer over the substrate, exposing the method of manufacturing the organic electroluminescent light described in the above-mentioned application, which includes the manufacturing method of the C structure, wherein after forming the cathode, the cathode is further encapsulated. The surface is subjected to a plasma treatment process. Ϋΐ ϋΐ 请 请 请 请 请 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 The method for manufacturing a halogen structure of an organic electroluminescence display comprises: forming a first polysilicon layer and a second polysilicon layer on a substrate; forming a gate insulating layer on the substrate, covering a first polysilicon layer and a second polysilicon layer; a first gate is formed on the gate insulating layer, and one scan line and a second gate are electrically connected to the first gate The first gate and the second gate are respectively located above the first polysilicon layer and the second polysilicon layer; in the first polycrystalline layer on both sides of the first gate Forming a first source region and a first drain region, and forming a second source region and a second drain region in the second polysilicon layer on both sides of the second gate; Forming a dielectric layer on the substrate to cover the first gate and the second gate; forming a first contact opening, a second contact opening, and a third contact opening in the dielectric layer and the gate insulating layer And a fourth contact opening, wherein the first contact opening and the second contact opening respectively expose the first source region and a first drain region, wherein the third contact opening and the fourth contact opening respectively expose the second source region and the second drain region; forming a metal layer on the dielectric layer, respectively filling the a first contact opening, the second contact opening, the third contact opening and the fourth contact opening; patterning the metal layer to form a first source and a first step to 26] 92i5twidoc/g 200812130 And a data line electrically connected to the first source, and the outer pole, the second pole, and the second electrodeless body - a protective layer is formed on the substrate, and the cathode is covered a line, the first source, the first-thin pole, the poor material, the line, the scanning electrode; the second source of the secret surface and the second layer not forming an organic functional layer on the cathode; An anode is formed on the functional layer. 13. The method of fabricating a halogen structure according to the scope of claim 12, further comprising electrically connecting the second optical source to the second source. Electrical connection (4) The method of manufacturing the main structure of the surface of the 12th surface is shown in Fig. 12, where the silver, the alloy, the chrome alloy or the silver alloy. The invention relates to a method for producing an organic electroluminescence display structure as described in claim 12, wherein the material of the anode comprises a samarium oxide, an indium zinc oxide or an aluminum zinc oxide. 16. As described in claim 12, further comprising forming an insulating layer over the substrate to expose the cathode. The organic electroluminescence described in claim 12 of the patent application shows the manufacturing method of the structure, wherein after the cathode is formed, the surface of the cathode is further subjected to a plasma treatment process. The method for manufacturing a halogen structure of an organic electroluminescence display device according to claim 17, wherein the gas used in the plasma treatment process comprises hydrogen, oxygen or nitrogen. . 200812130w 192I5twf.doc/g 28